JP2007294850A - Electrostatic deflecting system, electron beam irradiation apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing the substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrostatic deflecting system which suppresses the occurrence of a charge-up, and an electron beam irradiation apparatus using the electrostatic deflecting system. <P>SOLUTION: An electrostatic deflecting system 521 (522-526) is equipped with a cylindrical base material 612 having an electron beam passing portion 609; a plurality of deflection electrodes 603, which are provided along a tubular axis in internal walls of the cylindrical base material 612 and are separated electrically from each other; space portions 608 which communicate with gap portions 611 among the plurality of adjoining deflection electrodes 603 and are located outside the gap portions 611, as viewed from the electron beam passing portion 609; and first conductive films 602 provided to the space portion 608. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electrostatic deflector, an electron beam irradiation apparatus, a substrate processing apparatus, a substrate processing method, and a substrate manufacturing method.

  In recent years, instead of photolithography technology, an exposure method using an electron beam or the like has been realized.

In a conventional exposure apparatus using an electron beam, an objective lens for irradiating the wafer with an electron beam in a cylindrical column and an electrostatic deflection for deflecting the position of the electron beam on the wafer. Is provided. In an electrostatic deflector, a plurality of deflection electrodes are electrically separated from each other on an inner wall surface of a base material made of cylindrical ceramics (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 2002-231170 (paragraph numbers 0004 to 0005, FIG. 2)

In such an electrostatic deflector of an exposure apparatus, ceramics and the like are exposed on the inner wall surface of the cylindrical base material on which no deflection electrode is provided. For this reason, electric charges are accumulated in the exposed material portions such as ceramics which are difficult to discharge, and charge-up is likely to occur.
Due to this charge-up, there has been a problem that the electron beam is deflected to a place other than the intended place, leading to a reduction in exposure accuracy.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide an electrostatic deflector that suppresses the occurrence of charge-up, an electron beam irradiation apparatus using the same, a substrate processing apparatus, a substrate processing method, and a substrate. It is in providing the manufacturing method of.

  In order to solve the above problems, an electrostatic deflector of the present invention is provided along a cylindrical axis on a cylindrical base material having an electron beam passage portion and an inner wall surface of the cylindrical base material, and electrically A plurality of separated deflection electrodes, a space portion that communicates with a gap portion between the plurality of adjacent deflection electrodes, and is located outside the gap portion when viewed from the electron beam passage portion; and provided in the space portion. And a first conductive film.

  According to such a configuration of the present invention, the electrons that have entered the gap between adjacent deflection electrodes among the electrons that pass through the electron beam passage portion enter the space portion and are discharged by the first conductive film. Therefore, the occurrence of charge-up is suppressed, and the electron beam irradiated by the electron beam irradiation apparatus in which such an electrostatic deflector is incorporated does not cause undesired deflection due to charge-up, and thus performs a desired deflection. be able to. An exposure apparatus incorporating such an electron beam irradiation apparatus can perform high-precision exposure processing.

  The deflection electrode and the first conductive film are insulated from each other.

  Thus, the deflection electrode and the conductive film are insulated.

  In addition, the space portion is wider than the gap portion.

  According to such a configuration, by narrowing the gap portion, electrons do not easily enter the space portion from the electron beam passage portion, and electrons that have once entered the space portion do not easily return to the electron beam passage portion. Electrons that cause charge-up can be trapped in the space almost certainly.

  In addition, the influence of electric charges charged in the insulating region can be reduced.

  The space portion is curved.

  According to such a configuration, even if electrons entering the space portion collide with the wall surface and bounce off, it is difficult to return to the electron beam passage portion again.

  The first conductive film is provided in a region that is visible when the space portion is viewed from the electron beam passage portion.

  In this way, since many of the electrons entering the space through the gaps are considered to reach an area that can be seen when the space is viewed from the electron beam passage, at least from the electron beam passage to the space. It is sufficient that the first conductive film is formed in a region that can be visually recognized.

  Thereby, electrons can be discharged almost certainly by the first conductive film.

  In addition, a communication portion that communicates the gap portion with the space portion is further provided.

  According to such a configuration, the exposed area of the insulating region can be reduced by providing the communication portion between the gap portion and the space portion. Further, since such a configuration is easy to manufacture in manufacturing, the manufacturing cost can be reduced. Further, insulation between adjacent deflection electrodes can be ensured.

  The communication part includes a first communication part communicating with the electron beam passage part and a second communication part communicating with the space part wider than the first communication part and narrower than the space part. It is characterized by having.

  According to such a structure, the part which is not coat | covered with the electrically conductive film in a space part can be made smaller, and charge-up can be suppressed.

  In addition, a second conductive film is provided that is electrically connected to each of the deflection electrodes and provided in the communication portion that is insulated from the first conductive film.

  According to such a configuration, electrons are less likely to enter the space portion from the electron beam passage portion, and electrons that have once entered the space portion are less likely to return to the electron beam passage portion, and at the same time, the influence of the charge charged in the insulating region. Can be reduced. In addition, since the second conductive film is provided in the communication portion, electrons entering the communication portion pass between the two second conductive films, so that the electrons enter due to the potential between these second conductive films. Can be suppressed.

  In addition, a connection conductive film that electrically connects the first conductive film provided in each of the space portions is provided.

  According to such a configuration, the plurality of first conductive films can be grounded together, and the structure of the electrostatic deflector can be simplified.

  The first conductive film is grounded.

  According to such a configuration, the charge accumulated in the first conductive film can be discharged quickly.

  In addition, an insulating region provided between the deflection electrode and the first conductive film is provided.

  According to such a configuration, the deflection electrode and the first conductive film can be insulated.

  Further, the deflection electrode and the first conductive film are made of the same member.

  Thus, the deflection electrode and the first conductive film can be formed from the same member.

Further, the member of the cylindrical base material is a ceramic of Ωcm having a volume resistivity of 10 ⁷ to 10 ¹⁰ .

Thus, as a member of the cylindrical base material, a ceramic having a volume resistivity of 10 ⁷ to 10 ¹⁰ and having an Ωcm can be used.

  Further, the deflection electrode is a metal film.

  Thus, a metal film can be used as the deflection electrode.

  The metal film is made of a platinum group metal.

  Thus, a platinum group metal can be used. Thereby, even if the electrode surface is oxidized by cleaning using active oxygen gas, it is not insulated.

  The platinum group metal is any one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.

  Thus, ruthenium, rhodium, palladium, osmium, iridium, and platinum can be used as the platinum group metal.

  Further, the deflection electrode is made of a conductive oxide.

  Thus, a conductive oxide can be used as the deflection electrode. And even if a strong oxidizing agent is used when cleaning the electron beam irradiation apparatus incorporating the electrostatic deflector, it is difficult to be oxidized.

  In addition, the conductive oxide is any one of ruthenium oxide, iridium oxide, and platinum oxide.

  As described above, ruthenium oxide, iridium oxide, platinum oxide, or the like can be used as the conductive oxide.

  Further, the apparatus further includes a temperature adjustment mechanism capable of setting the electrostatic deflector to a predetermined temperature.

  In an electron beam irradiation apparatus incorporating such an electrostatic deflector, the deflection electrode is heated when the deflection electrode is heated by a temperature adjusting mechanism and the inside of the electron beam irradiation apparatus is cleaned with active oxygen gas. Contaminants attached to the surface can be removed efficiently.

  An electron beam irradiation apparatus according to the present invention is an electron beam irradiation apparatus including an electron gun that emits an electron beam and an electrostatic deflector that controls the electron beam, wherein the electrostatic deflector includes an electron beam passage portion. A plurality of deflection electrodes provided along the cylinder axis on the inner wall surface of the cylindrical substrate and electrically separated from each other, and a gap between the adjacent deflection electrodes It communicates, The space part located outside the said gap | interval part seeing from the said electron beam passage part, The 1st electrically conductive film provided in the said space part is provided, It is characterized by the above-mentioned.

  According to such a configuration of the present invention, in the electrostatic deflector, the electrons that have entered the gap between adjacent deflection electrodes among the electrons that pass through the electron beam passage portion enter the space portion, and the electrons are the first. Discharged by the conductive film. Therefore, the occurrence of charge-up is suppressed, and the electron beam irradiated by the electron beam irradiation apparatus in which such an electrostatic deflector is incorporated does not cause undesired deflection due to charge-up, and thus performs a desired deflection. be able to. An exposure apparatus incorporating such an electron beam irradiation apparatus can perform high-precision exposure processing.

  As described above, according to the present invention, it is possible to suppress the occurrence of charge-up and prevent a reduction in exposure accuracy.

  Hereinafter, the present invention will be described in detail based on illustrated embodiments.

  FIG. 1 is a diagram showing a system configuration of, for example, an exposure apparatus showing an embodiment as a substrate processing apparatus according to the present invention. The system according to the exposure apparatus 1 includes other apparatuses, for example, a coating apparatus (coater; COT) for applying a resist solution to a processing surface of a substrate to be processed, for example, a semiconductor wafer W, and a resist formed on the processing surface of the semiconductor wafer W. A resist processing apparatus 2 (C / D side in the figure) provided with a developing device (developer; DEV) for developing the film is configured to be connected inline. Further, the exposure apparatus 1 includes an air aligner 3 (S1 in the figure) having a linear space portion as a first unit (interface portion) for transporting the semiconductor wafer W in an air atmosphere (non-depressurized atmosphere) and a reduced pressure. Consists of an exposure processing unit 5 (S2 in the figure) as a second unit that includes an exposure processing chamber 4 that carries the semiconductor wafer W in an atmosphere (non-atmospheric atmosphere) and performs exposure processing on the semiconductor wafer W. Has been.

  On the resist processing apparatus 2 side, the transfer unit 10 including a stage with a positioning mechanism (not shown) for physically dropping and positioning the semiconductor wafer W for transferring the semiconductor wafer W to the exposure apparatus 1 side and the semiconductor wafer A receiving portion 11 having a stage that is configured to receive W and is equipped with a positioning mechanism for physically dropping and positioning the semiconductor wafer W is disposed. Further, the transfer portion is provided on the resist processing apparatus 2 side. A self-propelled transfer mechanism 12 configured to be able to transfer the semiconductor wafer W to the receiving part 11 and the receiving part 11 is provided.

  Further, at least one storage body, for example, a cassette, which is configured to be carried in and out by the transfer mechanism 12 and to be able to store a plurality of the semiconductor wafers W on the work space area A side by an operator on the resist processing apparatus 2 side. An operation panel 14, which is an operation mechanism including a cassette unit 13 configured to be freely arranged and a display mechanism of a control mechanism that controls the resist processing apparatus 2, is disposed.

  Further, on the resist processing apparatus 2 side, the transfer mechanism 12 is configured to be able to carry in and out, and before the semiconductor wafer W is transferred to the transfer unit 10 and / or to the semiconductor wafer W after received from the receiving unit 11. On the other hand, an alignment mechanism 15 for performing alignment based on a notch portion of the semiconductor wafer W, for example, a notch portion or an orientation flat portion, is disposed on the side facing the work space area A side (non-work space area side). .

  In the air aligner unit 3 (S1 in the figure), a self-propelled transfer mechanism 20 configured to be able to transfer the semiconductor wafer W to the transfer unit 10 and the receiving unit 11 on the resist processing apparatus 2 side is disposed. The semiconductor wafer W can be loaded and unloaded by the transport mechanism 20 on the work space area A side (longitudinal end side) of the atmospheric aligner unit 3 (S1 in the figure), and a transfer unit on the resist processing apparatus 2 side. A semiconductor wafer W received by the transfer mechanism 20 from the semiconductor wafer W and / or a notch portion, for example, a notch portion of the semiconductor wafer W with respect to the semiconductor wafer W before being transferred by the transfer mechanism 20 to the receiving portion 11 on the resist processing apparatus 2 side Alternatively, a positioning mechanism 21 that performs positioning based on the orientation flat portion is disposed.

  As the positioning accuracy in the positioning mechanism 21, the positioning of the semiconductor wafer W in the exposure processing is important in terms of processing from the viewpoint of yield and the like. Therefore, the accuracy is higher than the positioning accuracy by the alignment mechanism 15 on the resist processing apparatus 2 side. Alternatively, the positioning accuracy is higher than the positioning accuracy for positioning the semiconductor wafer W by physically dropping in the transfer unit 10 or the receiving unit 11 on the resist processing apparatus 2 side.

  Further, as shown in FIGS. 2, 3, and 4, the atmospheric aligner 3 (S 1 in the drawing) is positioned at a position (the other end in the longitudinal direction) facing the work space area A side of the transport mechanism 20. A heat treatment unit 22 for performing a post-exposure bake (PEB) process as a heat treatment is disposed on the semiconductor wafer W subjected to the exposure process in the exposure processing unit 5.

  The heat treatment section 22 is provided with a loading / unloading port 25 for loading / unloading the semiconductor wafer W into / from the inside, and a predetermined heat with respect to the semiconductor wafer W, for example, between 75 ° C. and 650 ° C. Heating plate 26 and semiconductor wafer W as a heat treatment mechanism that heats by applying heat at a predetermined temperature, for example, a predetermined temperature between 120 ° C. and 300 ° C., for example, 250 ° C. by means of a heating mechanism, for example, heater 31 On the other hand, a predetermined temperature control, for example, a temperature control as a temperature control processing mechanism that is set to a predetermined temperature such as approximately the same temperature as the room temperature in the air aligner unit 3 or the same temperature as the room temperature in the resist processing apparatus 2, for example, 23 ° C. Plate 27.

  Incidentally, as to the use of the temperature control plate 27, as described above, the temperature of the semiconductor wafer W before or after the transfer of the semiconductor wafer W to the heating plate 26 is of course adjusted, but not transferred to the heating plate 26. The semiconductor wafer W received by the transfer mechanism 20 from the transfer unit 10 on the resist processing apparatus 2 side and / or the semiconductor wafer W before being transferred by the transfer mechanism 20 to the receiving unit 11 on the resist processing apparatus 2 side. Temperature control processing may be performed, and temperature control processing may be performed on the semiconductor wafer W before and / or after the semiconductor wafer W is transferred to the positioning mechanism 21 described above.

  As shown in FIGS. 3 and 4, the temperature adjustment plate 27 is configured to be horizontally movable between a standby position B and an upper position C of the heating plate 26 by a moving mechanism (not shown). In B, a plurality of (for example, three) support pins 29 are provided at a position below the temperature control plate 27 so that the semiconductor wafer W protrudes from the notch portion 28 of the temperature control plate 27 from below and is supported by point contact. The support mechanism 30 is provided.

  Further, the heating plate 26 includes a support mechanism 33 that includes a plurality of, for example, three support pins 32 that protrude from the lower side and support the semiconductor wafer W by point contact, and is configured to be movable up and down. Therefore, the semiconductor wafer W loaded by the transport mechanism 20 via the loading / unloading port 25 is received at the raised position of the support mechanism 30 and supported on the support pins 29, and then supported by the support mechanism 30 being lowered. The semiconductor wafer W on the pins 29 is transferred onto the temperature control plate 27.

  Further, after the temperature control plate 27 is moved above the heat treatment section 22, the support mechanism 33 is raised, the semiconductor wafer W on the temperature control plate 27 is supported on the support pins 32, and then the temperature control plate 27 is moved to the standby position. After moving or moving in the direction, the support mechanism 33 is lowered and the semiconductor wafer W is transferred onto the heating plate 26.

  Further, as shown in FIG. 2, the air aligner unit 3 (S1 in the figure) is provided with a fan filter unit 40 (FFU) at an upper position thereof. This FFU 40 has a down flow of clean air in which the chemical component, for example, the amine concentration is controlled to a predetermined value, for example, 1 ppb or less, is formed in the air aligner unit 3 by the temperature or / and humidity or / and the filter mechanism (not shown). The air aligner 3 is set to have a predetermined pressure.

  Here, an example of the idea of improving the occurrence of cross contamination in the atmospheric aligner 3 (S1 in the figure) will be described. The height h1 of the receiving portion unloading port 11a that is the unloading port of the semiconductor wafer W between the receiving portion 11 and the transferring portion loading port 10a that is the loading port of the semiconductor wafer W from the transferring portion 10 on the resist processing apparatus 2 side. The height position h2 of the loading / unloading port 41 that is the loading / unloading position of the semiconductor wafer W with respect to the exposure processing unit 5 side is set to the height position h3 of the loading / unloading port 25 for loading / unloading the semiconductor wafer W of the heat treatment unit 22. In this case, since the exposure processing unit 5 side is also set in a reduced-pressure atmosphere, the influence of particles in the exposure processing is required to be higher than the processing environment in the resist processing apparatus 2. Therefore, h2 ≧ h1, preferably h2> h1 is set. Further, from the viewpoint of suppressing the influence of heat from the carry-in / out port 25 of the heat treatment section 22, h3 ≧ (h1orh2), preferably h3> (h1orh2) is set.

  Furthermore, when the height position of the transfer part carry-in port 10a or / and the receiving part carry-out port 11a and the carry-in / out port 41 is substantially the same height position, a slightly different position is preferable rather than a completely opposed positional relationship.

  In addition, an example of another way of thinking from the viewpoint of suppressing the influence of heat from the carry-in / out port 25 of the heat treatment section 22 will be described with reference to FIG. Walls 50 are provided above and below the loading / unloading port 25 for loading and unloading the semiconductor wafer W in the heat treatment part 22, and the arrangement atmosphere of the heat treatment part 22 and the arrangement atmosphere of the transfer mechanism 20 are blocked. Further, the direction of the air flow 51 inside the heat treatment section 22 is formed by the exhaust mechanism, for example, the vacuum pump 52, from the temperature control plate 27 side to the heating plate 26 direction side.

  In addition, it is possible to achieve suppression of heat dissipation by providing an opening / closing mechanism 54 that can open and close the opening of the loading / unloading port 25. With such a configuration, the formation area of the downflow DF in the air aligner unit 3 can be reduced, and the FFU 40 can be reduced in size, downsizing of the system, downsizing of the footprint of the device, and reduction of the device price. The merits such as are also produced. Further, by disposing a control mechanism 53 (or / and a heating mechanism such as a power supply mechanism) of the heat treatment part 22 above the heat treatment part 22, the influence of heat on the semiconductor wafer W in the air aligner part 3 is further suppressed. .

  Next, as shown in FIG. 6, the exposure processing unit 5 is provided with a preliminary vacuum chamber 60 as a substrate loading / unloading unit through which the semiconductor wafer W is loaded / unloaded by the transfer mechanism 20 via the loading / unloading port 41. Yes. An opening / closing mechanism 61 is provided at the loading / unloading port 41 of the preliminary vacuum chamber 60 so that the inside of the preliminary vacuum chamber 60 can be kept airtight. The preliminary vacuum chamber 60 includes a plurality of, for example, three support pins 62 which are configured to be able to deliver the semiconductor wafer W from the transfer mechanism 20 and protrude from below to be supported by point contact. A mounting table 63 provided with a support mechanism that does not operate is provided.

  Further, the mounting table 63 is provided with a temperature control mechanism (not shown), and the temperature of the mounting table 63 is processed in the processing unit in the resist processing apparatus 2 described above, for example, a coating apparatus (coater; COT) for applying a resist solution. From the temperature of the semiconductor wafer W and / or the atmospheric temperature in the resist processing apparatus 2 and / or the atmospheric temperature of the air aligner 3. A low temperature between several ° C and 3 ° C, preferably a low temperature between 0.1 and 0.5 ° C is set. This is for suppressing the loss of the accuracy of the exposure process due to the expansion and contraction of the resist film formed on the semiconductor wafer W.

  Further, a plurality of at least one image detection mechanism, for example, a CCD camera 65, is disposed above the semiconductor wafer W placed on the mounting table 63 so that an image of at least the peripheral edge of the semiconductor wafer W can be detected. ing. The purpose of detection by these CCD cameras 65 is arranged to detect at least the position angle θ of the semiconductor wafer W. As for the arrangement of the CCD camera 65, at least one, preferably two, are arranged on the Y axis in the Y axis in the direction perpendicular to the X axis in the conveyance direction of the semiconductor wafer W by the conveyance mechanism 20, and at least one at another angle. Place and achieve its purpose. Thereby, based on the position angle θ and pre-registered reference coordinates on the X and Y axes, that is, the registered data and the detected data are compared, and the difference is calculated and detected by the control mechanism 166. Yes. Incidentally, Q in the figure indicates the center position of the semiconductor wafer W.

  In addition, a transfer port 66 for a semiconductor wafer W with a decompression transfer chamber, which will be described later, is provided in the Y-axis direction of the preliminary vacuum chamber 60, and an opening / closing mechanism configured to open and close the transfer port 66 in an airtight manner. 67 is provided. Further, the preliminary vacuum chamber 60 is provided with an exhaust port 68 for exhausting the interior of the preliminary vacuum chamber 60 and is configured to be evacuated by an exhaust mechanism, for example, an exhaust pump 69. Accordingly, the pressure between a predetermined degree of vacuum and the atmosphere can be set by controlling the control mechanism 166 with the introduction amount of a predetermined gas, for example, an inert gas such as nitrogen, and the exhaust amount of the exhaust pump 69 from a gas introduction mechanism (not shown). It is configured.

  Next, the decompression transfer chamber 70 will be described with reference to FIGS. The decompression transfer chamber 70 is provided with a transfer mechanism 72 for transferring the semiconductor wafer W to the above-described preliminary vacuum chamber 60 via the transfer port 71. The transport mechanism 72 is provided with an arm 73 as a support mechanism having a function of supporting at least one surface contact by the peripheral edge of the semiconductor wafer W and / or a plurality of point contacts from the back surface side.

  Further, an exhaust chamber 80 communicating with the atmosphere of the decompression transfer chamber 70 is provided on the side of the decompression transfer chamber 70 facing the preliminary vacuum chamber 60. An exhaust port 81 is provided at a position below the exhaust chamber 80, and an exhaust mechanism, for example, a vacuum pump 83, from the exhaust port 81 through the exhaust path 82 includes not only the exhaust chamber 80 but also the decompression transfer chamber 70. Thus, it is configured to be freely evacuated.

  Therefore, no exhaust means is directly connected to the decompression transfer chamber 70. This solves the drawback that the decompression transfer chamber 70 is enlarged if the transfer mechanism 72 is built in and the exhaust mechanism is further connected. Thereby, size reduction and thickness reduction are achieved. Furthermore, the maintenance time can be shortened by detachably configuring the exhaust chamber 80 even in the event of a failure of the vacuum pump 83 or the like, maintenance of the exhaust path 82, or the like. The relationship between the volume 70a in the decompression transfer chamber 70 and the volume 80a in the exhaust chamber 80 is set so that volume 70a ≧ volume 80a, preferably volume 70a> volume 80a. Thus, consideration is given to achieving an improvement in throughput that maintains a predetermined degree of vacuum in the decompression transfer chamber 70. Further, the height h4 of the space portion in the decompression transfer chamber 70 is set to be larger than the height h5 of the space portion in the exhaust chamber 80, and the exhaust speed from the exhaust chamber 80 can be increased.

  Further, as shown in FIG. 8, the transfer mechanism 72 in the decompression transfer chamber 70 is controlled by the control mechanism 166 to calculate the semiconductor wafer W supported by the arm 73 based on the data of the CCD camera 65 described above. When a result difference occurs, based on the difference information, the carry-in angle θ1 of the arm 73 to the exposure processing chamber 4 is changed and corrected (position adjustment by a turning operation), and the semiconductor wafer W is maintained in a reduced-pressure atmosphere. It is configured to be conveyed to a stage 91 in the exposure processing chamber 4 via a carry-in port 89. In addition, each inlet 89 between the decompression transfer chamber 70 and the exposure processing chamber 4 is configured to be airtightly opened and closed by an opening and closing mechanism 92.

  Further, the stage 91 in the exposure processing chamber 4 is configured to be able to move the semiconductor wafer W in the X1 axis direction (left and right direction in the figure) and the Y1 axis direction (up and down direction in the figure). When the horizontal alignment of the W X-axis and the Y-axis is calculated based on the data of the CCD camera 65 described above, the control mechanism 166 performs the difference based on the difference information. . Further, when the arm 73 is transported while changing the carry-in angle θ <b> 1 into the exposure processing chamber 4, the stage 91 in the exposure processing chamber 4 uses the data predicted by the control mechanism 166 for the delivery position of the semiconductor wafer W by the arm 73 in advance. Based on, it is configured to be moved.

  Therefore, as shown in FIG. 9, the outline of the entire alignment flow as seen from the semiconductor wafer W is shown in FIG. 9. The alignment process 95 on the resist processing apparatus 2 side, which is another apparatus, is performed in the atmospheric aligner unit 3. After the alignment step 96, the above-described alignment step in the air atmosphere, the step 97 in which the position of the semiconductor wafer W is detected by the CCD camera 65 in the preliminary vacuum chamber 60 in a reduced pressure atmosphere. Based on the position detection data detected by the CCD camera 65, a step 98 of carrying and positioning while adjusting the turning angle in the movement of the arm 73 of the decompression transfer chamber 70, and then an exposure processing chamber which is still another decompression chamber. The process 99 which performs the alignment by the operation | movement of an XY axis in the stage 91 in 4 is performed. As described above, the alignment process at a plurality of locations in the air atmosphere, the position detection for position confirmation and the alignment process at the plurality of locations in the reduced pressure atmosphere are performed, so that the alignment accuracy is high.

  Further, as shown in FIG. 10, in the exposure processing chamber 4, an electron beam irradiation apparatus 500 that irradiates the semiconductor wafer W on the stage 91 with an electron beam is provided on the ceiling. The electron beam irradiation apparatus 500 includes an electron gun 501 and a column 100. Although the detailed configuration will be described later, the column 100 is divided into a GL block 560, a CL block 561, a PL block 562, and an RL / OL block 563. The column 100 is provided with, for example, an ion pump 101 as an electron gun 501 which is an electron beam generation source, and an exhaust mechanism for making the pressure of the electron gun unit an ultra-high vacuum.

As shown in FIG. 11, the exhaust lines 106 of the column 100 are provided at a plurality of locations in the vertical direction. In the present embodiment, from the top to the bottom, i.e. the direction from the electron gun 501 in the semiconductor the wafer ^W, set to 10 ^{-7 Pa,} 10 -6 Pa, stepwise vacuum so that ¹⁰ -5 Pa is changed Then, the degree of vacuum in the region where the semiconductor wafer W is irradiated with the electron beam is set to 10 ⁻⁵ Pa.

  In the present embodiment, one exhaust line 106 is provided for each region having a different degree of vacuum, and the degree of vacuum is changed stepwise by changing the exhaust amount of each exhaust line 106. . In this way, by configuring the degree of vacuum to be higher as it goes upward and lower as it goes downward, it is possible to improve the straight-advancing efficiency of the electron beam or suppress the reduction of energy. In this embodiment, one exhaust line 106 is provided for each region having a different degree of vacuum, and the exhaust amount of each exhaust line is made different. For example, the exhaust amounts of a plurality of exhaust lines are made the same. The degree of vacuum may be changed depending on the number of exhaust lines used. In this case, the arrangement density of the number of exhaust lines decreases from the upper side to the lower side. That is, what is necessary is just to set so that substantial exhaust amount may become small toward the downward direction from the upper direction of the column 100. FIG.

  Further, as shown in FIG. 10, the exposure processing chamber 4 is provided with an exhaust port 102 on the side wall of the stage 91 facing the decompression transfer chamber 70 side, and the exposure processing chamber 4 is connected via an exhaust line 103. An exhaust mechanism for exhausting the interior, for example, a high vacuum pump (turbo molecular pump) 104 is provided. Further, a mark detection mechanism 105 for optically confirming a mark formed on the processing surface of the semiconductor wafer W on the stage 91 is disposed on the ceiling portion of the exposure processing chamber 4. For example, the stage 91 is finally configured to be aligned in the XY-axis operation.

  Furthermore, the stage 91 includes an electrostatic chuck mechanism 110 that electrostatically attracts and holds the semiconductor wafer W as shown in FIGS. Furthermore, the stage 91 is made of alumina, which is an insulating material, for example, and has a conductive coating on the surface thereof. Here, as the stage 91, it is desirable to use a light, strong, and difficult-to-extend structural material in order to reduce the weight of the movable part of the stage, increase the natural frequency, and reduce the elongation due to temperature. The conductive coating is preferably a thin film. This is because if electrons are charged on the surface, the beam trajectory will be affected. Therefore, it is desirable to make all the surfaces visible from the electron beam conductive so that the electrons flow to the ground. This is because if the member is thick, an influence of the eddy current on the electron beam occurs.

  Further, a ring-shaped member 111 is arranged around the stage 91. The material forming the ring-shaped member 111 is, for example, alumina which is an insulating material. The surface of the ring-shaped member 111 is coated with a conductive coating, and the outer peripheral portion is sucked and held by an electrostatic chuck mechanism 110 as an electrostatic chuck mechanism of the stage 91. The semiconductor wafer W includes a flat portion 112 that is set at a height position substantially the same as the height position of the processing surface of the semiconductor wafer W and is level with the semiconductor wafer W. An electron beam refraction prevention film is provided on the surface of the ring-shaped member 111 as an eddy current prevention mechanism in order to suppress the straight refraction of the electron beam irradiated from the column 100, that is, to suppress the generation of eddy currents. For example, a titanium-based material such as TiN is coated. Further, the ring-shaped member 111 and the stage 91 itself are grounded (GND) as shown in the figure.

  Further, the stage 91 is provided with a heating mechanism, for example, a heater 170, and the control mechanism 166 is configured to freely set the semiconductor wafer W of the stage 91 to a predetermined temperature together with a cooling mechanism (not shown). The predetermined temperature is substantially the temperature of the semiconductor wafer W during processing in the processing section in the resist processing apparatus 2 described above, for example, a coating apparatus (coater; COT) for applying a resist solution during processing of the semiconductor wafer W. Or / and the atmospheric temperature in the resist processing apparatus 2 and / or the atmospheric temperature of the air aligner 3. A low temperature between several ° C and 3 ° C, preferably a low temperature between 0.1 and 0.5 ° C is set.

  This is for suppressing the loss of the accuracy of the exposure process due to the expansion and contraction of the resist film formed on the semiconductor wafer W. For example, since the amount of heat is taken from the wafer when evacuating with a load lock (for example, the preliminary vacuum chamber 60), the wafer W immediately after being carried to the stage tends to be lower than the temperature before the load lock such as the atmospheric aligner 3 There is. For this reason, if the temperature on the stage side is lowered by about a decrease in the temperature of the wafer due to vacuum evacuation, the time for waiting for the temperature stability (convergence of elongation) of the wafer transferred to the upper part of the stage can be saved.

  Further, as shown in FIG. 14, the electrostatic chuck mechanism 110 includes a first electrode 300 and a second electrode as a plurality of, for example, two electrodes on an insulator portion 299 formed of an insulator such as ceramics. 301 is built-in. On the outside of the second electrode 301, a through-hole 302 penetrating the insulator portion 299 is configured to be movable, and a conductive mechanism configured to be in contact with a predetermined position on the back surface of the semiconductor wafer W (also capable of grounding). A conduction needle 303 is provided as a grounding mechanism configured, and a vertical movement mechanism (first conduction) for moving the conduction needle 303 up and down to bring the conduction needle 303 into contact with the back surface of the semiconductor wafer W at a predetermined pressure. Needle contact mechanism) 304 is provided.

  Further, a resist film is formed on the processing surface side of the semiconductor wafer W at a predetermined distance, for example, a distance X2 in the drawing, from the position facing the position where the conductive needle 303 contacts the semiconductor wafer W. A conductive needle 305 is provided as a conductive mechanism configured to be able to come into contact with the semiconductor wafer W from a region where the conductive wafer 305 is in contact with the processing surface of the semiconductor wafer W at a predetermined pressure. A moving mechanism (second conductive needle contact mechanism) 306 for moving is provided.

The contact of the semiconductor wafer W by the conductive needle 305 and conductive needle 303, nitride film formed on the back surface side of the semiconductor wafer W, for example, SiN film and an oxide film as an underlying film, for example of the Si0 ₂ film Si0 _The conduction needle 303 is pressed by the vertical movement mechanism 304 so as to be in contact with at least the _two films. Therefore, a pressing force enough to penetrate the SiN film is necessary for the vertical movement mechanism 304. It should be noted that a plurality of films, for example, SiN and SiO ₂ may be broken through and brought into contact with Si. Incidentally, Si 312 is a material of the semiconductor wafer W itself. As a result, the charge removal of the semiconductor wafer W from the back surface side of the semiconductor wafer W by the conductive needle 303 can be performed efficiently, and even the Si 312 which is the material of the semiconductor wafer W itself does not reach, so there is a problem such as breakage of the semiconductor wafer W itself. Can be improved.

Further, since the conductive needle 303 needs to penetrate the SiN film that is harder than the processing surface side, a plurality of conductive hardness materials, for example, conductive diamond, are embedded in the tip portion. ing. In addition to the conductive diamond described above, the material of the tip or the conductive needle is tungsten carbide, alumina titanium carbide ceramic (Al ₂ O ₃ + TiC), thermite (TiC + TiN) tungsten, palladium, iridium, beryllium − You may form with either of copper alloys. Further, particularly important properties as a material used for the conductive needle are conductivity, hardness, and non-magnetic properties.

  Furthermore, regarding contact of the conductive needle 305 with the processing surface side of the semiconductor wafer W, as an example, a circuit pattern region formed on the processing surface side of the semiconductor wafer W and a resist film formed on the circuit pattern region The film is brought into contact with an antistatic film formed on the resist film. As another example, among the circuit pattern region formed on the processing surface side of the semiconductor wafer W, the conductive film formed on the circuit pattern region, and the resist film formed on the conductive film In contact with the conductive film. As another example, a circuit pattern region formed on the processing surface side of the semiconductor wafer W, a conductive film formed in the circuit pattern region, a resist film formed on the circuit pattern region Thus, the conductive film is brought into contact with the conductive film.

  As described above, since the semiconductor wafer W itself is not in direct contact with Si but is in contact with the conductive film formed on the Si of the semiconductor wafer W itself, The charge removal of the semiconductor wafer W by the conductive needle 305 can be performed efficiently, and since it does not reach Si which is the material of the semiconductor wafer W itself, problems such as breakage of the semiconductor wafer W itself can be improved.

  Further, since it does not reach Si, which is the material of the semiconductor wafer W itself, the contact hole by the conductive needle 305 can be reduced in a region where a resist film or a circuit pattern is formed. Therefore, in a subsequent process, for example, in the resist processing apparatus 2 It is possible to suppress the influence of processing such as developer deposition in the application of the developer in the development processing, and it is possible to improve the yield.

  Further, as shown in FIG. 14, the conductive needle 303 and the conductive needle 305 include a switching mechanism, for example, a current detection mechanism for detecting the current flowing through the conductive needle 303 and / or the conductive needle 305 via the switch SW1. A predetermined voltage with respect to the first switching terminal 320 of the ammeter or the second switching terminal 321 for grounding the conductive needle 303 or / and the conductive needle 305 to the GND, the conductive needle 303 or / and the conductive needle 305. And a third switching terminal 322 connected to a power source VP5 for applying the voltage VP5.

  The conductive needle 303 and / or the conductive needle 305 or / and the connected needle 305 are connected to the conductive needle 303 and the conductive needle 305 in the drawing, and both are switched to the first switching terminal 320 and the second. Although the example which has contacted the terminal 321 and the 3rd switching terminal 322 was shown, the above-mentioned 1st switching terminal 320 2nd switching terminal 321 3rd each independent with each conduction needle | hook 303,305 is shown. This is because the switching terminal 322 may be provided.

  Furthermore, the current value data of the ammeter at the first switching terminal 320 can be monitored by the control mechanism 166. In addition, in the power supply of the third switching terminal 322, for convenience, a negative potential is applied to the conduction needles 303 and 305 in the drawing, but a configuration is made so that a positive potential is applied. In other words, it is configured to be set as necessary.

  The first electrode 300 is connected to a switching mechanism, for example, the switch SW2 and a switching mechanism, for example, the switch SW3. The switch SW3 supplies a power source VP1 for applying a predetermined negative voltage or a predetermined positive voltage. The power supply VP2 is configured to be connectable to the power supply VP2, and the power supply VP1 and the power supply VP2 are configured to be connectable to a power supply VP4 that generates a reference potential via a switching mechanism, for example, the switch SW4. Further, the switch SW4 is configured to be able to select either the power supply VP4 side or the GND side. Therefore, when the switch SW4 selects GND, the reference potential is 0V.

  The second electrode 301 is configured to be connectable to a power source VP3 that applies a predetermined negative voltage via a switching mechanism, for example, a switch SW5. The power source VP3 is further connected to a reference source via a switching mechanism, for example, the switch SW4. It is configured to be connectable to a power supply VP4 that generates a potential. In addition, the switch SW4 is configured to be able to select either the power supply VP4 side or the GND side as described above. Therefore, when the switch SW4 selects GND, the reference potential is 0V.

  In the above description, the power source VP1 applies a predetermined negative voltage, the power source VP2 applies a predetermined positive voltage, and the power source VP3 applies a predetermined negative voltage. A power source VP1 that applies a voltage, a power source VP2 that applies a predetermined negative voltage, and a power source VP3 that applies a predetermined positive voltage may be used. In addition, although the potential of the power source VP4 that generates the reference potential is described as negative in the figure, it may be operated as a positive potential or may be set as necessary.

  As described above, the contact position of the conductive needle 303 contacting from the back surface side of the semiconductor wafer W and the contact position of the conductive needle 305 contacting from the processing surface side of the semiconductor wafer W are more centered on the semiconductor wafer W. It is set to be close to.

  This is because the conductive needle is intended to remove the potential of the electron beam accumulated on the semiconductor wafer W or the electrostatic chuck mechanism, but the conductive needle 305 that comes in contact from the processing surface side of the semiconductor wafer W is positioned at the center position of the semiconductor wafer W. This is because there is a limit because it is necessary to irradiate an electron beam to expose the semiconductor wafer resist film. Also, the conductive needle 305 that comes in contact with the processing surface side of the semiconductor wafer W is placed at an upper position on the insulator portion 299 because the conductive needle 305 that comes in contact with the processing surface side of the semiconductor wafer W is detached from the insulator portion 299. This is to prevent the semiconductor wafer W from coming off or scattering from the insulator portion 299 due to the pressing force of the conductive needle 305 if it is performed at the above position.

  Next, a detailed configuration of the electron beam irradiation apparatus 500 in the exposure processing chamber 4 will be described with reference to FIG.

  FIG. 15 is a conceptual diagram showing a basic configuration of the electron beam irradiation apparatus 500.

  As shown in FIG. 15, the electron beam irradiation apparatus 500 includes an electron gun 501 that irradiates an electron beam 502 toward a semiconductor wafer W, and a column 100.

  The column 100 includes a gun lens (hereinafter referred to as GL) block 560, a condenser lens (hereinafter referred to as CL) block 561, a projection lens (hereinafter referred to as PL) block 562, and a reduce lens / object lens (hereinafter referred to as RL / OL) block 563. Divided into two blocks. The PL block 562 is located between the first shaping aperture S1-AP553 and the second shaping aperture S2-AP555. As for the relationship between the first shaping aperture S1-AP553, the second shaping aperture S2-AP555, and the exhaust line 106 described above, the exhaust line 106 disposed between the electron gun 501 and the first shaping aperture S1-AP553. Is greater than the number of exhaust lines 106 disposed between the first shaping aperture S1-AP553 and the second shaping aperture S2-AP555 or / and between the electron gun 501 and the first shaping aperture S1-AP553. The intervals between the plurality of exhaust lines 106 arranged therebetween are arranged closer to the intervals between the plurality of exhaust lines 106 arranged between the first shaping aperture S1-AP553 and the second shaping aperture S2-AP555. It is comprised so that.

  The GL block 560 is an area for converging the electron beam 502 emitted from the electron gun 501. The GL block 560 includes a gun lens 511, a first adjustment electrostatic deflector (AL 1) 521, and a gun lens aperture (hereinafter, GL-AP) 551. Have. The emitted electron beam 502 is converged by the GL 511, adjusted to the center of the column 100 by the first adjustment electrostatic deflector (AL 1) 521, and a portion having the largest current of the electron beam is cut out by the GL-AP 551.

  The CL block 561 is a region for irradiating the first shaping aperture S1-AP553 with an electron beam, and includes a second adjustment electrostatic deflector (AL2) 522, a condenser lens aperture (hereinafter CL-AP) 552, CL512, 3 adjustment electrostatic deflector (AL3) 523 is provided.

  The electron beam 502 that has passed through the GL block 560 is adjusted so as to pass through the center of the CL 512 by the second adjustment electrostatic deflector (AL2) 522, and the number of electrons becomes a desired number by the CL-AP 552 and CL 512. The brightness is adjusted through adjustment, and the light is irradiated onto S1-AP553 by the third adjustment electrostatic deflector (AL3).

S1-AP553 shapes the electron beam 502 into a desired shape, and the electron beam 502 that has passed through the CL block 561 is shaped into a desired shape by the S1-AP553. In addition,
FIG. 15 shows the thicknesses (widths) of a plurality of electrostatic deflectors (for example, electrostatic deflectors 521, 522, and 523) between the electron gun 501 and the first shaping aperture S1-AP553 (first region). Thus, it is comprised so that each thickness may differ. By the way, in this embodiment, the electron beam is controlled to be appropriately configured so as to be thicker from the electron gun 501 toward the semiconductor wafer W or from the electron gun 501 toward the traveling direction of the electron beam. It is configured as follows.

  The PL block 562 is an area for forming an image of S1-AP553 on the second shaping aperture S2-AP555, and includes a first blanking electrostatic deflector (BLK1) 531 and a fourth adjusting electrostatic deflector ( AL4) 524, blanking aperture (hereinafter, BLK-AP) 554, fifth adjustment electrostatic deflector (AL5) 525, second blanking electrostatic deflector (BLK2) 532, sixth adjustment electrostatic deflection. And an electrostatic deflector (CP1) 541 for a first character projection (hereinafter referred to as CP). The thicknesses (widths) of the plurality of electrostatic deflectors, for example, the electrostatic deflectors 531 and 524 between the first shaping apertures S1-AP553 to BLK-AP554 (second region) are shown in FIG. Thus, it is comprised so that each thickness may differ. Incidentally, in the present embodiment, the electron beam is controlled so as to be thinned toward the direction of the semiconductor wafer W from the electron gun 501 or in the traveling direction of the electron beam from the electron gun 501. It is configured as follows.

  The electron beam 502 that has passed through S1-AP553 is deflected by the first blanking electrostatic deflector (BLK1) 531 so that unnecessary locations on the semiconductor wafer W are not exposed, and the fourth adjustment electrostatic deflection. The electron beam is adjusted to pass through the BLK-AP 554 by the device (AL4) 524, deflected onto the BLK-AP 554, and cut so that the electron beam 502 does not reach an unnecessary place on the semiconductor wafer W.

  The electron beam 502 that has passed through the BLK-AP 554 is adjusted to pass through the center of the PL by the fifth adjustment electrostatic deflector (AL5) 525 and the sixth adjustment electrostatic deflector (AL6) 526, and the PL513 controls the S1- The image of AP553 is formed on the second shaping aperture S2-AP555. The electron beam 502 is selected by the first CP electrostatic deflector (CP1) 541 as an arbitrary character on S2-AP555 or an electron beam of an arbitrary size. Note that the thicknesses (widths) of a plurality of electrostatic deflectors, for example, the electrostatic deflectors 525 and 526 between the BLK-AP 554 and the second molding aperture S2-AP 555 (third region) are shown in FIG. Thus, each thickness is configured to be substantially the same thickness. Incidentally, in the present embodiment, the electron beam is properly controlled from the electron gun 501 in the direction of the semiconductor wafer W or in the direction of travel of the electron beam from the electron gun 501. . Further, when considering, for example, the first CP electrostatic deflector (CP1) 541 as another electrostatic deflector, the thickness of the first CP electrostatic deflector (CP1) 541 is the thickness (width) of each of the electrostatic deflectors 525 and 526. ) The electron beam is properly controlled with a thicker thickness. As described above, a plurality of electrostatic deflectors 525 and 526 having substantially the same thickness are provided, and an appropriate electron beam can be obtained by combining the electrostatic deflectors 541 having a thickness thicker than those electrostatic deflectors 525 and 526. It is comprised so that it may control.

  S2-AP555 is an aperture that shapes an electron beam into any character and any size, and the electron beam 502 that has passed through the PL block 562 is shaped into a desired shape by S2-AP555.

  The RL / OL block 563 is a region where an image of S2-AP555 is formed on the semiconductor wafer W, and includes a second CP electrostatic deflector (CP2) 542, an RL 514, an OL 571, and the like. The electron beam 502 that has passed through S2-AP555 is adjusted to pass through the RL center by the second CP electrostatic deflector (CP2) 542, and is transferred onto the semiconductor wafer W by the RL 514. As shown in FIG. 15, the second CP electrostatic deflector (CP2) 542 has a thickness (width) substantially equal to or greater than the thickness of the first CP electrostatic deflector (CP1) 541. It is configured and the electron beam is properly controlled. Further, the thickness (width) of the second CP electrostatic deflector (CP2) 542 is configured to be larger than that of the above-described electrostatic deflectors other than the first CP electrostatic deflector (CP1) 541 as will be described later. The electron beam is properly controlled. It is needless to say that the thickness of the electrostatic deflector is not limited to the above-mentioned configuration, and can be selected as appropriate, and the electron beam may be appropriately controlled in combination. .

  The adjustment electrostatic deflectors 521 to 526 described above have a plurality of deflection electrodes, for example, four poles, and the blanking electrostatic deflectors 531 and 532 have a plurality of deflection electrodes, for example, two poles. CP electrostatic deflectors 541 and 542 have a plurality of deflection electrodes, for example, 8 poles. As described above, the column 100 is provided with a plurality of electrostatic deflectors having different numbers of deflection electrodes. The electrostatic deflector having a larger number of deflection electrodes is provided on the semiconductor wafer W side, and the electron gun 501 side is provided. An electrostatic deflector having a small number of deflection electrodes is provided. Further, the two-pole blanking electrostatic deflectors 531 and 532 are provided between a plurality of four-pole adjustment electrostatic deflectors 521 to 526. Here, in the electrostatic deflector, the larger the number of deflection electrodes, the smaller the distortion during electron beam deflection, but the processing becomes difficult.

  Therefore, in the present embodiment, the number of deflection electrodes of the electrostatic deflector provided in the region on the semiconductor wafer W side where the influence of exposure accuracy due to distortion at the time of electron beam deflection is remarkable is plural, for example, eight, and The number of deflecting electrodes of the electrostatic deflector for adjusting the CL axis and the PL axis, which is less influenced by the distortion, is set to a plurality of, for example, 4 poles, and the number of deflecting electrodes of the electrostatic deflector that simply needs to block unnecessary electron beams is reduced. A plurality of, for example, two poles are used. Thereby, the manufacturing cost of an electrostatic deflector can be reduced. Note that the number of deflection electrodes of the above-described electrostatic deflector is an integer or an even multiple of 2 from the electron gun 501 toward the semiconductor wafer W or toward the electron beam from the electron gun 501. For example, an area composed of at least one group of 2 × 2 quadrupole electrostatic deflectors, for example, an area between the electron gun 501 and the first shaping aperture S1-AP553, and an integer multiple of 2 For example, a region composed of a plurality of, for example, two or more groups of 2 × 1 two-pole electrostatic deflectors and 2 × 2 four-pole electrostatic deflectors, for example, a first shaping aperture S1-AP553. To the BLK-AP554, in other words, an integer multiple or even multiple of 2, for example, a 2 × 1 two-pole electrostatic deflector and a 2 × 2 four-pole electrostatic deflector Composed of 2x4 8-pole electrostatic deflection A plurality of, for example, a region composed of three or more groups, for example, a region between the first molding apertures S1-AP553 to S2-AP555, and an integer multiple or even multiple of 2, for example 2 × 4 For example, an area composed of at least one group, for example, an area between S2-AP555 and the semiconductor wafer W (fourth area), which is an 8-pole electrostatic deflector. At least one of the electrostatic deflectors may be an electrostatic deflector having a number of deflecting electrodes that is not an even multiple of 2 but an odd multiple of 2, for example, 6 or 10 poles. It goes without saying that combinations with vessels may be used. Further, at least one of the above-described electrostatic deflectors may be an electrostatic deflector having a number of deflection electrodes that is an even multiple, an integral multiple, or an odd multiple of 3, for example, three poles, instead of an even multiple of 2. Needless to say, a combination with the electrostatic deflector may be used.

  Further, the CP electrostatic deflectors 541 and 542 are longer than the other electrostatic deflectors. In other words, the electrostatic deflector is made of a cylindrical base material, but the length along the cylindrical axis is long. By increasing the length in this way, the deflection amount of the electron beam can be increased with a small voltage. Therefore, in order to irradiate a desired position on the semiconductor wafer W with the electron beam, the electrostatic deflector positioned on the semiconductor wafer W side has a length longer than that of other electrostatic deflectors as described above. It is getting longer.

  In this embodiment, two blanking electrostatic deflectors are provided so as to sandwich the BLK-AP 554. However, at least one electrostatic deflector may be provided on the electron gun 501 side from the BLK-AP 554. You can cut the line. Incidentally, as in this embodiment, by providing another second blanking electrostatic deflector (BLK2) 532 on the side of the semiconductor wafer W with respect to the BLK-AP 554, the leakage electron beam at the time of cutting the electron beam is reduced. The amount can be reduced. As described above, the first blanking electrostatic deflector (BLK1) 531 and the second blanking electrostatic deflector (BLK2) 532 each have two-polar deflection electrodes. When the two electrostatic deflectors are viewed, the arrangement positions of the respective deflection electrodes coincide. In addition, regarding the coincidence of the arrangement positions of the respective electrostatic deflection electrodes described above, each position of an electron beam passage portion 609 described later is directed from the electron gun 501 toward the semiconductor wafer W or from the electron gun 501. The center position of the electron beam passage portion 609 of each electrostatic deflection electrode is configured to coincide with the passage line of the electron beam so that the electron beam can pass in the traveling direction. Similarly, the space 608 of each electrostatic deflection electrode having the same number of poles among the electrostatic deflection electrodes is configured to coincide with the passage line of the electron beam.

  The electrostatic deflectors other than the second blanking electrostatic deflector (BLK2) 532 have substantially the same diameter of the electron beam passage portion, whereas the second blanking electrostatic deflector (BLK2). ) The diameter of the electron beam passage portion of 532 is larger than that of other electrostatic deflectors. This is because the deflection sensitivity is adjusted by using two blanking electrostatic deflectors so as to act like a beam stop.

  The adjustment electrostatic deflectors 521 to 526 have a voltage of −100 V to 100 V, and the blanking electrostatic deflectors 531 and 532 have a swing control width voltage from the applied voltage of the adjustment electrostatic deflectors 521 to 526. A voltage value controlled and set to a small voltage value, for example, a voltage of −20 V to 20 V is applied to the CP electrostatic deflectors 541 and 542 by a fluctuation control width than the applied voltage of the adjusting electrostatic deflectors 521 to 526. A voltage value that is controlled and set to a voltage value that is controlled to be a small voltage value and a voltage value that has a greater swing control width than the applied voltage of the blanking electrostatic deflectors 531 and 532, for example, − It is designed so that a voltage of 40V to 40V can be applied. Each of the plurality of electrostatic deflectors is electrically independent and can be individually controlled. As for the voltage application, the opposite electrodes may be applied with the same voltage, for example, −40 and +40, even if the sign is different.

  Each electrostatic deflector has a temperature adjusting mechanism (not shown) such as a heater and can be set to a predetermined temperature. This is for suppressing unwanted products from adhering to each electrostatic deflector.

  As shown in FIG. 15, the lenses such as GL 511, CL 512, PL 513, and RL 514 are formed so as to be thinner as they are closer to the semiconductor wafer W. GL511 has a predetermined voltage value, for example, −4200V to −4900V, CL512 has a predetermined voltage value, for example, −3000V to −3500V, PL513 has a predetermined voltage value, for example, −2800V, and RL514 has a predetermined voltage value It is designed to be able to apply a voltage value, for example, -4300V.

  Next, the structure of the aforementioned electrostatic deflector will be described with reference to FIGS. Here, a four-pole electrostatic deflector used as an adjustment electrostatic deflector will be described. However, the two-pole and eight-pole electrostatic deflectors also have a basic configuration except that the number of deflection electrodes is different. Will not change. In the drawings, the scales and the like of each structure are different in order to make each structure easy to understand.

  FIG. 16 is a schematic perspective view of the electrostatic deflector of the column 100 of the electron beam irradiation apparatus shown in FIG. FIG. 17 is a plan view of the electrostatic deflector shown in FIG. 16 as viewed from above. FIG. 18 is a schematic perspective view of the electrostatic deflector shown in FIG. 16 cut in the axial direction. FIG. 19 is a partial plan view of the electrostatic deflector shown in FIG.

  As shown in the figure, the adjustment electrostatic deflector 521 (522 to 526) includes a cylindrical base 612 having an electron beam passage 609 and a radial inner surface of the cylindrical base 612 along the cylindrical axis. The four deflection electrodes 603 that are provided and electrically separated from each other, and four spaces that communicate with the gap portion 611 between the adjacent deflection electrodes 603 and are located outside the gap portion 611 when viewed from the electron beam passage portion 609. A portion 608, a communication portion 607 communicating with the gap portion 611 and the space portion 608, a first conductive film 602 provided along a cylindrical axis provided on the wall surface of the space portion 608, and each first conductive film 602. A connection conductive film 703 that is electrically connected and has a ring shape in plan view, and a voltage introduction terminal 605 that applies a voltage to the deflection electrode 603 are provided. A second conductive film 610 that is electrically connected to the deflection electrode 603 is provided on the wall surface of the communication portion 607. Note that the second conductive film 610 is provided up to the entrance of the space portion 608 of the communication portion 607, but may be slightly protruded into the space portion 608 and must be in electrical contact with the first conductive film 602. It goes without saying that it should be.

  The cylindrical substrate 612 includes three layers, an inner layer 606, an intermediate layer 604, and an outer layer 601, all of which are made of ceramics of the same material. The deflection electrode 603 and the second conductive film 610 that are electrically connected to each other are electrically insulated from the first conductive film 602 and the connection conductive film 703 that are electrically connected to each other. As a middle layer 604. A space portion 608 provided in the middle layer 604 portion is in a state in which ceramics are exposed. That is, the wall surface of the space portion 608 includes a conductive region where the first conductive film 602 is provided and an insulating region where the ceramic is exposed. Further, by providing the connection conductive film 703, a shield effect can be obtained without being affected by an external electric field.

  The deflection electrode 603 and the second conductive film 610 are formed on the inner wall surface and the divided surface of each of the four inner layers 606 having a shape obtained by dividing a cylindrical base material into four in the cylinder axis direction. The deflection electrode 603 and the second conductive film 610 formed in each of the four inner layers 606 are electrically insulated between different inner layers 606. The communication unit 607 includes a first communication unit 607a that communicates with the electron beam passage unit 609 and a second communication unit 607b that communicates with a space 608 that is wider than the first communication unit 607a. The deflection electrode 603 and the second conductive film 610 are formed on the inner wall surface and the divided surface of each of the four inner layers 606 having a shape obtained by dividing a cylindrical base material into four in the cylinder axis direction. Alternatively, the conductive film may not be coated on the lower surface) if it is not necessary to cover the conductive film. Further, the surface (upper surface and / or lower surface) of the outer layer 601 may be covered with a conductive film electrically connected to the connection conductive film 703 and / or the first conductive film 602.

  Thus, by narrowing the width of the communication part 607 on the electron beam passage part 609 side (that is, the first communication part 607a), the amount of the electron beam entering the space part 608 can be reduced. Further, by increasing the width of the second communication portion 607 on the space portion 608 side (that is, the second communication portion 607b), the exposed area of the ceramic of the middle layer 604 in which the first conductive film of the space portion 608 is not covered is reduced. can do. In addition, since the second conductive film 610 is provided in the communication portion 607, electrons entering the communication portion 607 pass between the two second conductive films 610. Therefore, the potential between the second conductive films 610 is reduced. Thus, the entry of electrons can be further suppressed.

  The space portion 608 is wider than the communication portion 607, and the space portion 608 has a planar shape curved in a substantially circular shape. The first conductive film 602 is electrically insulated from the second conductive film 610 and is provided at least in a region that is visible when the space portion 608 is viewed from the electron beam passage portion 609. In addition, although the example of the circular shape was shown about the planar shape of the space part 608, the shape of a square shape, an ellipse shape, or those combination may be sufficient, and the volume of the space part 608 is abnormal in this space part about a diameter or a distance. Care must be taken so that no discharge occurs. Furthermore, it is preferable that the volume that substantially forms the space portion 608 is larger than the volume that substantially forms the communication portion 607 described later. More specifically, the relationship between the volume that substantially forms the communication portion 607a of the communication portion 607, the volume that substantially forms the communication portion 607b, and the volume that substantially forms the space portion 608 is the same as that of the communication portion 607a. It is configured such that the substantially formed volume <the volume that substantially forms the communication portion 607b <the volume that substantially forms the space portion 608. In addition, when the communication part 607b is used as the first space part when the communication part 607a of the communication part 607 is used as the substantial communication part, the space part 608 can also be regarded as the second space part. Even if the shape is square, it is preferable that the first conductive film 602 be disposed in a region that is visible when the space 608 is viewed from the electron beam passage portion 609.

  Since the connection conductive film 703 provided between the outer layer 601 and the intermediate layer 604 is electrically connected to the four first conductive films 602, the connection conductive film 703 and the first conductive film 703 that are electrically connected to each other. By grounding an arbitrary portion of the conductive film 602, the plurality of first conductive films 602 can be grounded together, and the configuration of the electrostatic deflector 521 (522-526) can be simplified.

  The space portion 608 can also be used as an exhaust hole for increasing the degree of vacuum of the electron beam passage portion 609, and can also be used as a gas introduction hole and a gas exhaust hole during cleaning. In addition, it is necessary for safety of the system to provide an abnormal discharge detection mechanism capable of detecting abnormal discharge in the space 608 in the space 608. Furthermore, as described above, the temperature adjustment mechanism that sets the space 608 to a predetermined temperature, for example, a heater or the like, may be configured to suppress adhesion of unnecessary deposits.

  In the electrostatic deflector 521 (522 to 526) in the present embodiment, a space portion 608 is provided in communication with the gap portion 611 between the electron beam passage portion 609 and the adjacent deflection electrode 603, and the space portion 608 has a first portion. By providing the conductive film 602, electrons that have entered the space portion 608 from the electron beam passage portion 609 are unlikely to return to the electron beam passage portion 609 again. As described above, the space portion 608 functions as an electron capture region. Then, the electrons accumulated in the space portion 608 through the gap portion 611 are quickly discharged by the first conductive film 602. Accordingly, since the occurrence of charge-up is suppressed, the electron beam can be deflected to a desired shape, and the deterioration of exposure accuracy due to charge-up can be prevented.

  Further, as described above, the first conductive film 602 is desirably provided at least in a region that is visible when the space portion 608 is viewed from the electron beam passage portion 609, and passes through the gap portion 611 to form the space portion. The electrons that have entered 608 are almost certainly captured and discharged by the first conductive film 602.

  Here, since the traveling direction of the electrons that reach the space portion 608 is restricted by passing through the communication portion 607, the first conductive is formed in a region that can be seen when the space portion 608 is viewed from the electron beam passage portion 609. When at least the film 602 is provided, electrons can be captured by the first conductive film 602 almost certainly.

Further, the space portion 608 has a region where the ceramic of the middle layer 604 is exposed in order to be electrically insulated from the deflection electrode 603. Here, as the material of the outer layer 601, the middle layer 604, and the inner layer 606 of the cylindrical substrate 612, the CR value (C is a capacitance, R is a resistance) is an electron beam scanning frequency of 100 μs or less, and the capacitance C is 100 pF or less. In addition, it is desirable to use a material that satisfies the condition that the resistance R is 10 ⁶ to 10 ⁷ Ω. In this way, by setting the capacitance C to 100 pF, even if a charge-up occurs in the area where the ceramic of the space portion 608 is exposed, it is easy to be discharged before the next electron enters, and the charge-up is suppressed to some extent. Can do.

  Further, in the present embodiment, since the space portion 608 has a curved shape, even if electrons entering the space portion 608 collide with the wall portion forming the space portion 608 and bounce back, the electron beam passage portion 609 again. The shape is difficult to return to.

  In this embodiment, the space 608 is designed to be wider than the width of the gap 611 and the communication portion 607. Therefore, the electrons once entering the space 608 are unlikely to return to the electron beam passage 609 again, The electron beam that passes through the line passing portion 609 is not affected.

  Moreover, in this embodiment, the communication part 607 has the 1st communication part 607a and the 2nd communication part 607b from which width differs. Thereby, the exposed area of the ceramic of the middle layer 604 not covered with the first conductive film in the space portion 608 can be reduced, and charge-up can be suppressed.

  In this embodiment, the first conductive film 602 and the connection conductive film 703 that are electrically connected are grounded. However, by setting the first conductive film 602 to a positive potential, electrons are more reliably captured. can do.

  In the exposure processing chamber 4, the first conductive films 602 of all the electrostatic deflectors in the column 100 are grounded, and the semiconductor wafer W is also grounded. As a result, no potential is generated between the semiconductor wafer W and the electrostatic deflector, and charges are not accumulated in the semiconductor wafer W. Further, the first conductive film 602 and the semiconductor wafer W may be designed to have the same potential. As a result, no potential is generated between the semiconductor wafer W and the electrostatic deflector, and charges are not accumulated in the semiconductor wafer W.

As the member of the cylindrical substrate 612, for example, a non-conductive member such as alumina, ceramics, conductive ceramics having a volume resistivity of 10 ⁷ to 10 ¹⁰ Ω · cm can be used. As described above, by using a non-conductive member having a volume resistivity of 10 ⁷ to ¹⁰ 10 as a member of the cylindrical base material, it is easy to discharge even if an electric charge is charged, and the ground (GND) The electrode can be insulated. In the present embodiment, conductive ceramics are used as the cylindrical substrate 612, but insulating ceramics may be used. In the case of using insulating ceramics, for example, the volume resistivity may be 10 infinite Ω · cm. Further, as a member of the cylindrical substrate 612, the specific resistance of the ceramic of the middle layer 604 is higher than that of the outer layer 601 and / or the material of the inner layer 606, for example, the specific resistance of the ceramic of the middle layer 604 is 10. ⁷ Ω · cm or higher, and the ratio of the material of the outer layer 601 or / and the inner layer 606 may be 10 ⁷ Ω · cm or lower. Further, as a member of the cylindrical substrate 612, The specific resistance of the ceramic is set to a material having a value higher than the specific resistance of the material of the outer layer 601 and / or the inner layer 606, and the specific resistance of the material of the outer layer 601 is set to a material lower or higher than the specific resistance of the material of the inner layer 606. It may be configured.

Further, as described above, the cylindrical base material 612 has a CR value (C is a capacitance, R is a resistance) of an electron beam scanning frequency of 100 μs or less, a capacitance C of 100 pF or less, and a resistance R. It is desirable to use a material that satisfies the condition of 10 ⁶ to 10 ⁷ Ω. The deflection electrode 603 includes a platinum group metal such as ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt), ruthenium oxide, iridium oxide, platinum oxide, and the like. Made of a conductive oxide.

  Note that when the inside of the exposure processing chamber 4 is cleaned, a strong oxidizing agent is used, and therefore it is desirable to use a material that is not easily oxidized as the deflection electrode 603. The first conductive film 602, the connection conductive film 703, and the second conductive film 610 may be the same member or different members from the deflection electrode 603. Like the deflection electrode 603, the members are ruthenium (Ru), rhodium (Rh), and palladium. Platinum group metals such as (Pd), osmium (Os), iridium (Ir), and platinum (Pt), and conductive oxides such as ruthenium oxide, iridium oxide, and platinum oxide can be used. Alternatively, a metal film formed by gold plating can be used as the first conductive film 602, the deflection electrode 603, the connection conductive film 703, and the second conductive film 610. In the present embodiment, the deflection electrode 603, the first conductive film 602, the connection conductive film 703, and the second conductive film 610 are made of the same member and are made of gold. In addition to the above, for example, vanadium dioxide (V02), chromium dioxide (Cr02), molybdenum dioxide (Mo02), tungsten dioxide (W02), rhenium dioxide (Re02), niobium dioxide (Nb02) , Conductive metal oxides such as ruthenium dioxide (Ru02), rhodium dioxide (Rh02), iridium dioxide (Ir02), palladium dioxide (Pd02), platinum dioxide (Pt02), osmium dioxide (Os02), and lanthanum nickel composite oxide (LaNi03), strontium vanadate (SrV03), calcium vanadate (SrV03), calcium vanadate (CaV03), strontium ferrate (SrFe03), lanthanum thiocyanate (LaTi03), lanthanum strontium nickel composite oxide (LaSrNi04) , Conductive complex oxides such as strontium chromate (SrCr03), calcium chromate (CaCr03), calcium ruthenate (CaRu03), strontium ruthenate (SrRu03), strontium iridate (SrIr03) can be appropriately used. . Note that these conductive films are preferably formed by an electrolytic plating method or a sputtering method.

  In FIG. 19, the width a of the gap portion 611 is a predetermined width, for example, a predetermined value of 1 mm or less, for example, about 0.5 mm, and the length b of the communication portion 607 is a predetermined length, for example, 50 mm or less. It is a predetermined value, for example, about 1.5 mm to 25 mm. In this embodiment, the width a and the length b are designed to have a 1:10 relationship. Here, when the diameter of the electron beam passage portion 609 and the diameter of the cylindrical base material 612 are the same, the longer the length b, the more difficult the electrons enter the space portion 608, and the charge charged up in the space portion 608 is increased. The influence on the electron beam passing through the electron beam passage portion can be reduced.

  However, as the length b becomes longer, the diameter d of the space portion 608 becomes smaller. Therefore, in order to make the exposed area of ceramics in the space portion 608 as small as possible while securing a sufficient electron capture region, the width a It is desirable that the length b is a predetermined ratio, for example, a predetermined ratio of 1: 1 or more, for example, 1: 3 to 1:10.

  Furthermore, in the present embodiment, by providing the second communication portion 607b wider than the first communication portion 607a, the width of the communication portion 607 is constant with the width of the first communication portion 607a, that is, the width of the gap portion 611. The exposed area of the ceramic in the space portion 608 can be made smaller than this.

  In the present embodiment, the thickness of the first conductive film 602 is a predetermined thickness, for example, a predetermined thickness of 0.5 μm to 5 μm, for example, about 2 to 3 μm, and the diameter d of the space 608 is a predetermined diameter. For example, a predetermined diameter of 10 mm or less, for example, about 2 to 3 mm. The thickness of the outer layer 601 is a predetermined thickness, for example, a predetermined thickness of 10 mm or less, for example, about 1 to 5 mm, and the thickness of the middle layer is a predetermined thickness, for example, a predetermined thickness of 5 mm or less, for example, 0.5 to 1 mm, the inner layer 606 has a predetermined thickness, for example, a predetermined thickness of 10 mm or less, for example, about 1.5 to 5 mm, and the deflection electrode 603 has a predetermined thickness, for example, 10 μm. The following predetermined thickness, for example, about 2 to 3 μm, and the electron beam passage portion 609 have a predetermined diameter, for example, a predetermined diameter of 20 mm or less, for example, about 4 to 11 mm. Note that these numerical values are appropriately adjusted depending on the type of the electrostatic deflector. In this embodiment, the relationship between the thickness of the outer layer 601, the thickness of the middle layer, and the thickness of the inner layer 606 is such that the thickness of the inner layer 606 ≧ the thickness of the outer layer 601> the thickness of the middle layer. The relationship of the thickness of 601 ≧ the thickness of the inner layer 606> the thickness of the middle layer may be employed.

  In the column 100 of the present embodiment, the space 608 is provided for all the electrostatic deflectors. However, the electrostatic deflection located in the vicinity of the semiconductor wafer W where the reduction in exposure accuracy due to charge-up is more significantly affected. In the present embodiment, for example, at least a space portion may be provided in the CP electrostatic deflector, and a reduction in exposure accuracy can be suppressed.

  The electrostatic deflector is not limited to the above-described embodiment, and various modifications and changes can be made based on the technical idea of the present invention. For example, FIG. 20 is a plan view of an electrostatic deflector 1521 which is a modified example. In addition, the same code | symbol is attached | subjected about the structure similar to the above-mentioned electrostatic deflector. In the above-described embodiment, the second conductive film 610 is provided on the wall surface of the communication portion 607. However, as shown in the figure, no conductive film is provided on the wall surface of the communication portion 607 so that the ceramic of the inner layer 606 is exposed. May be.

  FIG. 21 is a plan view of an electrostatic deflector 2521 which is still another modification. In addition, the same code | symbol is attached | subjected about the structure similar to the above-mentioned electrostatic deflector. In the above-described embodiment, the shape of the communication portion 607 is partially different in width, but the width of the shape of the communication portion 707 that communicates the space portion 608 and the electron beam passage portion 609 as shown in the figure. It may be made constant. As a result, the width is narrow, making it more difficult for electrons to enter, and the substantial ratio between width a and length b is increased.

  FIG. 22 is a plan view of an electrostatic deflector 3521 which is still another modification. In addition, the same code | symbol is attached | subjected about the structure similar to the above-mentioned electrostatic deflector. In the above-described embodiment, the plurality of first conductive films 602 are electrically connected by the connection conductive film 703. However, as shown in the drawing, the connection conductive film 703 is not provided, and each first conductive film 602 is provided. Grounding may be performed. Note that an ammeter may be provided in a ground path grounded for each first conductive film 602, and a voltage value applied to each pole may be controlled by a control mechanism while detecting a charge-up amount of each electrode. . In addition, the outer layer 601 and the inner layer 606 on the upper surface and the lower surface of the cylindrical base material 612 may be plated with gold or the like, or may be grounded using such a plated conductive film.

  Next, the structures of GL511, CL512, PL513, and RL514 will be described with reference to FIGS. Both lenses have the same basic structure.

  FIG. 23 is a schematic perspective view of the lens 511 (512 to 514). FIG. 24 is a schematic cross-sectional view showing a state in which the lens 511 (512 to 514) is incorporated in the column 100.

  As shown in the drawing, the lens 511 (512 to 514) has a rail-shaped cross section. The lenses 511 (512 to 514) are supported and fixed by a support member 801. The lens 511 (512 to 514) is made of titanium or the like, and the support member 801 is made of ceramic or the like. A film made of gold is provided between the lens 511 and the support member 801. As for the thicknesses of GL511, CL512, PL513, and RL514, as shown in FIG. 15, a plurality of lenses between the electron gun 501 and the first molded aperture S1-AP553, for example, the thicknesses of the lenses 511 and 512, respectively. About (width), it is comprised so that each thickness may become substantially the same. By the way, in this embodiment, the electron beam is controlled to be appropriately configured so as to be thicker from the electron gun 501 toward the semiconductor wafer W or from the electron gun 501 toward the traveling direction of the electron beam. It is configured as follows. Further, the thickness (width) of the lens 513 between the first molded aperture S1-AP553 and the second molded aperture S2-AP555 is configured to be smaller than the thickness (width) of each of the lenses 511, 512. Yes. Furthermore, the thickness (width) of the lens 514 between the second shaping aperture S2-AP555 and the position where the semiconductor wafer W is arranged is configured to be smaller than the thickness (width) of the lens 513. At least each region has a lens having the above-mentioned thickness. More preferably, a plurality of lenses between the electron gun 501 and the first shaping aperture S1-AP553, for example, the thicknesses (widths) of the lenses 511 and 512 are such that the thickness (width) of the lens 511> 512 ( (Width) ≈513 (thickness (width))> 514 (thickness (width)).

  As shown in the drawing, the lens 511 (512 to 514) is made of a conductive member, for example, a non-magnetic member and a conductive member, for example, tungsten carbide. The lens 511 (512 to 514) is configured to be independently applied with a DC voltage, and the voltage of the lens 511 is set to a predetermined value of 4.0 to 5.0 kV, The voltage of the lens 512 is set to a predetermined value of 2.0 to 4.0 kV, the voltage of the lens 513 is set to a predetermined value of 2.5 to 3.5 kV, and the voltage of the lens 514 is 3 It can be set to a predetermined value of .5 to 4.0 kV and can be freely set by a control mechanism. Preferably, the voltage of the lens 511> the voltage of 514> the voltage of 512 or the voltage of 513 is set. The voltage 513 is a lens for projecting the first shaping aperture S1-AP553 onto the second shaping aperture S2-AP555, so that the voltage is set to a predetermined value between 2.8 and 3.2 kV. Is preferred. The inner diameter of the lens 511 (512 to 514) is set such that the inner diameter of the lens 513≈the inner diameter of the lens 512> the inner diameter of the lens 514. In addition, about the member 2010 arrange | positioned at the upper part and the lower part of the lens 511 (512-514) in the figure, the material is a conductive member, for example, a nonmagnetic member and a conductive member, for example, tungsten carbide, etc. Formed and grounded. Further, only the lens 512, for example, as shown in FIG. 46, an extension portion 2011 is provided only on the grounding member 2010 side on the electron gun side so that the inner diameter is smaller than the inner diameter of the lens 512. The inner diameter on the 2010 side may be set to be substantially the same as the inner diameter of the lens 512. The ground members 2010 of the other lenses 511, 513, and 514 are preferably set to have substantially the same inner diameter as the inner diameter of each lens.

  As another embodiment of the lens 511, as shown in FIG. 47, the lens 511 may be constituted by a ring member 511 configured such that its inner diameter increases toward the end in the traveling direction of the electron beam. . In this case, the inner diameter of the grounding member 2010 on the processing substrate placement side is substantially the same as the wide inner diameter under the ring member 511. Further, the ground member 2010 on the electron gun side is not provided in order to shorten the distance between the electron beam generation source and the ring member 511 as much as possible. With this configuration, the electron beam passing efficiency may be improved. As another embodiment of the lens 511, as shown in FIG. 48, the lens 511 may be configured by a plurality of ring members 2012 having an inner diameter that is widened in the traveling direction of the electron beam. It can be selected and configured by a combination of techniques.

  Next, a configuration for suppressing magnetic entry in the exposure processing chamber 4 that performs exposure processing by irradiating the semiconductor wafer W with an electron beam will be described. As shown in FIG. 25, the exposure processing chamber 4, the decompression transfer chamber 70, and the preliminary vacuum chamber 60 are made of a magnetic entry suppression mechanism, such as a magnetic shield member 121, such as permalloy, electromagnetic soft iron, electromagnetic steel, sendust, and ferrite. It is covered with the member which consists of. The reason for covering with this magnetic shield member is to suppress the generation of yield for the exposure processing of the semiconductor wafer W due to the influence of deflection of the electron beam by external magnetism. Although it is sufficient to cover the entire apparatus, it is unrealistic or uneconomical due to an increase in the size of the apparatus, and since the apparatus has a magnetic source such as a control device, the exposure processing chamber 4 and the reduced pressure It is preferable to cover the transfer chamber 70 and the preliminary vacuum chamber 60 itself. Although it is conceivable to cover only the exposure processing chamber 4, it is not sufficient to prevent magnetism from the decompression transfer chamber 70 and the preliminary vacuum chamber 60. Therefore, it is preferable to cover at least the exposure processing chamber 4 and the decompression transfer chamber 70, and preferably cover the exposure processing chamber 4, the decompression transfer chamber 70, and the preliminary vacuum chamber 60.

  Therefore, it is configured so as to cover the following area 120 by a half or more of the substantial floor area in the apparatus. Further, the magnetic shield member 121 preferably has a thickness or a structure that provides a magnetic field that is ½ or less of the magnetic field outside the magnetic shield or the magnetic field outside the apparatus as the magnetic field suppression effect.

  Furthermore, as one of the magnetic generation sources, as shown in FIG. 26, there is a power supply unit as an energy source for forming an electron beam, particularly an amplifier unit 130, for example. It is arranged on the side facing the transfer chamber 70, and its position is higher than the height position h 5 of the mounting surface of the semiconductor wafer W of the stage 91, preferably as a transfer port for the semiconductor wafer W in the exposure processing chamber 4. Is disposed at a position above the conveyance height position h6 of the carry-in entrance 89, more preferably at a position above the irradiation position h7 of the electron beam irradiated by the column 100. This is because the influence on the electron beam used for the processing by the electromagnetic wave from the amplifier unit 130 is taken into consideration.

  Further, below the amplifier unit 130 is a maintenance space 131 for the operator to perform maintenance on the exposure processing chamber 4 and the like. Therefore, it is arranged not only in consideration of the influence of electromagnetic waves but also in work efficiency at the time of maintenance, and is arranged to achieve downsizing of the device and reduction of footprint by effectively utilizing the space in the device. .

  Further, as shown in FIG. 27, on the side of the exposure processing unit 5 facing the atmospheric aligner unit 3, as shown in FIG. 27, a gas supply mechanism 140 for supplying a gas whose temperature or humidity is controlled, for example, clean air, to the entire apparatus. Is provided. The gas supply mechanism 140 is configured to supply the clean air 141 from the upper position to the FFU 40 via the gas flow path 142 provided above the exposure processing unit 5. Further, clean air 141 is supplied from the gas flow path 142 at a predetermined flow rate into the exposure processing unit 5, and a downflow DF is formed in the exposure processing unit 5. Further, the clean air 141 is recovered from the lower positions in the exposure processing unit 5 and the atmospheric aligner unit 3, and the recovered clean air 141 is efficiently supplied to the gas supply mechanism 140 through the gas recovery path 143 so that the circulation system can be efficiently used. It is configured to be formed.

  Furthermore, as shown in FIG. 28, the gas flow path 142 is horizontally divided into a plurality of regions Z1, Z2, and Z3 (in the drawing), that is, zoned. Further, a plurality of gas flow paths 150 that are vertically zoned in a plurality of regions Z11, Z12, Z13, Z14, and Z15 (in the drawing) are provided on both side walls of the exposure processing unit 5. The area Z2 of the gas flow path 142 is a flow path for supplying clean air from the gas supply mechanism 140 through the intake port 151 that takes in clean air into the exposure processing unit 5 as described above, and The gas supply port 152 for supplying clean air to the FFU 40 is provided.

  Further, the region Z1 and the region Z3 of the gas flow path 142 include a gas supply port 153 for supplying clean air from the gas supply mechanism 140 to at least one region of the gas flow path 150, for example, the flow path of the region Z11. The introduced clean air is configured to take in clean air from a gas inlet 154 provided above the flow path in the region Z11. The taken-in clean air forms a downflow DF from the top to the bottom as shown in the figure. Further, the downflow DF is configured to be guided from the lower position of the flow path of the area Z11 to the flow paths of the plurality of areas Z12, Z13, Z14, and Z15. As shown, it is configured to be formed as an upflow UPF in the flow paths of the plurality of regions Z12, Z13, Z14, Z15. Furthermore, the upflow UPF of the flow paths of the plurality of regions Z12, Z13, Z14, Z15 is a gas flow path from each gas recovery port 155 provided above the flow path of the plurality of regions Z12, Z13, Z14, Z15. In 142, it collect | recovers collectively and is collect | recovered by the gas supply mechanism 140 via the gas recovery port 156, and it is comprised so that a circulation system may be formed efficiently.

  Accordingly, as a gas partition member, a gas supply path for clean air to the area Z11 and a clean air gas recovery path from the areas Z12, Z13, Z14, and Z15 are formed in the flow paths of the areas Z1 and Z3. A partition plate 157 is arranged. Further, a heat source, for example, a control mechanism 166 of the exposure processing unit 5 is arranged in the flow path of the region Z11 where the downflow DF is formed. Furthermore, an operation mechanism of the control mechanism 166, such as the operation panel 160, having a smaller amount of heat generation than the control mechanism 166 is disposed in the areas Z12, Z13, Z14, Z15, for example, the upflow UPF region of the area Z15.

  In this way, the inside of the system is suppressed by a magnetic shield, and the outside, that is, the management of heat inside the device is performed on the outside, thereby suppressing the environmental impact from the outside of the entire system, and the system The system that considers the influence of the environment to the outside has been constructed. In addition, a heat source is provided in at least one of the upflow UPF regions Z12, Z13, Z14, and Z15, and the rise of heat from the heat source is promoted and recovered, thereby suppressing heat accumulation in the apparatus. By doing so, it is more preferable to have a structure that suppresses the influence of heat on the processing chamber and improves the yield of the semiconductor wafers W.

  Next, as shown in FIG. 29, the relationship between the pressures in the respective parts is as follows. The pressure in the resist processing apparatus 2 is P1, the pressure in the air aligner 3 is P2, the pressure in the heat treatment part 22 (opening / closing of the heat treatment part) P3 when the mechanism is open, and the pressure of the space where the heat treatment unit 22 is disposed (this space may be supplied with clean air from the gas supply mechanism 140 or supplied with clean air from the FFU 40) P4), the pressure in the preliminary vacuum chamber 60 (when the opening / closing mechanism 61 is opened) is P5, the pressure in the exposure processing unit 5 is P6, and the regions Z11, Z12, Z13, Z14, Assuming that the pressure in Z15 is P7 and the pressure in the clean room where the apparatus is located is P8, first, P6> P2, P1> P2, P5> P2, P2> P4, P2> P3, P6 ≧ P7 are set. Yes.

  P6> P2, P1> P2, P5> P2 is set so that clean air flows out to the processing chamber side of the resist processing apparatus 2 and the exposure processing unit 5 to the atmosphere aligner unit 3 side so as not to impair the processing environment. This is because. It is also configured to solve the problem of substitutional cross-contamination that is close to this.

  Further, when the pressure in the clean room is compared with P8 under the conditions of P6> P2, P1> P2, P5> P2, the relationship is P2> P8. Therefore, the processing environment by the air in the clean room is not impaired. Next, the relationship of P2> P4, P2> P3 will be described. As described above, the exhaust direction in the heat treatment section 22 flows from the temperature control mechanism to the heat treatment mechanism. This may take into consideration that the heat generated by the heat treatment mechanism does not leak particles generated from the semiconductor wafer W to the transfer mechanism side, although the influence of heat may not leak to the transfer mechanism side. Furthermore, since there is a heat generation source such as a power supply unit and a control mechanism for heat treatment above the heat treatment section, it is also considered that the influence of heat is not leaked to the transport mechanism side. As a matter of course, when the pressure in the clean room is compared with P8, the relationship is (P2, P4, P3)> P8. Further, considering the relationship of P4 and P3, it is preferable that the relationship of P3 ≧ P4 is satisfied. This is because the influence of heat into the heat treatment part 22 is taken into consideration.

  Further, the condition of P6 ≧ P7 is that a downflow is formed in the exposure processing unit 5 but a processing chamber or the like is disposed, so that part of the downflow also flows out in the horizontal direction. In order to suppress the agitation of the airflow in the apparatus even if the air is exhausted in the downward direction, it is preferable to take into consideration that P7 is recovered at a low pressure even in the unlikely event that the airflow leaks. In this state, for example, consideration is given to generation of a gap such as forgetting to attach the panel during maintenance of the inside of the apparatus. Further, when compared with the pressure P8 in the clean room, there is a relationship of (P6, P7)> P8. Therefore, the processing environment by the air in the clean room is not impaired.

  Further, when describing the relationship of P5, P2, and P1, the relationship of P5 ≧ P1> P2 is set. This is due to the consideration that the entry of particles or the like into the preliminary vacuum chamber 60 is suppressed by any chance. When compared with the pressure P8 in the clean room, there is a relationship of P2> P8.

  Further, regarding the relationship between the pressure in the preliminary vacuum chamber 60 (when the opening / closing mechanism 67 is opened) and the pressure in the decompression transfer chamber 70 (when the opening / closing mechanism 67 is opened), the pressure in the preliminary vacuum chamber 60 ≧ depressurization The pressure in the transfer chamber 70, preferably the pressure in the preliminary vacuum chamber 60> the pressure in the reduced pressure transfer chamber 70, and the pressure in the reduced pressure transfer chamber 70 (when the opening / closing mechanism 92 is opened) and the exposure processing chamber 4 ( Regarding the relationship between the pressure in the exposure processing chamber 4 and the pressure in the exposure processing chamber 4 ≥ the pressure in the decompression transfer chamber 70, preferably the pressure in the exposure processing chamber 4> the pressure in the decompression transfer chamber 70. With pressure. This is because particles from the preliminary vacuum chamber 60 or the exposure processing chamber 4 inside the decompression transfer chamber 70 can be collected in the decompression transfer chamber 70 to prevent the entry of particles into the exposure processing chamber 4. .

  Therefore, even in this setting, the yield of the substrate to be processed is improved. More preferably, the relationship between the pressure in the reduced pressure transfer chamber 70 and the pressure in the preliminary vacuum chamber 60 is the relationship between the pressure in the preliminary vacuum chamber 60> the pressure in the exposure processing chamber 4> the pressure in the reduced pressure transfer chamber 70. It is a pressure relationship.

  Further, regarding the relationship of the atmospheric temperature, the atmospheric temperature in the resist processing apparatus 2 ≧ the atmospheric temperature in the air aligner unit 3, preferably, the atmospheric temperature in the resist processing apparatus 2> the atmospheric temperature in the air aligner unit 3. ing. As described above, the temperature difference is such that the atmospheric temperature of the air aligner unit 3 is less than the atmospheric temperature in the resist processing apparatus 2 by 0. A low temperature between several ° C and 3 ° C, preferably a low temperature between 0.1 and 0.5 ° C is set. This is for suppressing the loss of the accuracy of the exposure process due to the expansion and contraction of the resist film formed on the semiconductor wafer W. For example, if the temperature control plate 27 is used and the temperature is slightly raised from the upper part of the stage 91 and transferred to the load lock (preliminary vacuum chamber 60), the wafer W is evacuated by the load lock (preliminary vacuum chamber 60, etc.). The temperature drop can be offset. Further, the atmospheric temperature in the air aligner unit 3 = the atmospheric temperature in the exposure processing unit 5 = the atmospheric temperature in the regions Z11, Z12, Z13, Z14, and Z15. Incidentally, the above “=” means an abbreviation, and if the error is within 3 ° C., it is within this range.

  Further, regarding atmospheric humidity, the atmospheric humidity in the air aligner unit 3 = the atmospheric humidity in the exposure processing unit 5 = the atmospheric humidity in the regions Z11, Z12, Z13, Z14 and Z15 = the atmosphere in the resist processing apparatus 2 The humidity conditions and the atmospheric humidity in the air aligner unit 3 ≧ the atmospheric humidity in the preliminary vacuum chamber 60 (when the opening / closing mechanism 61 is opened), preferably the atmospheric humidity in the air aligner unit 3> in the preliminary vacuum chamber 60 Atmosphere humidity (when the opening and closing mechanism 61 is opened). Therefore, naturally, the atmospheric humidity in the resist processing apparatus 2> the atmospheric humidity in the preliminary vacuum chamber 60 (when the opening / closing mechanism 61 is opened). This is because the inside of the preliminary vacuum chamber 60 is set to the atmospheric pressure and the reduced pressure state, so that the mixing of humidity causes a reduction in the throughput of the reduced pressure and the like, so that the inside of the preliminary vacuum chamber 60 is directed to the atmosphere aligner 3 direction. This is because a rare gas such as N 2 needs to flow out.

  Next, regarding the configuration of the control signal and the control mechanism, as shown in FIG. 30, the exposure processing unit 5 is provided with the control mechanism 166 as described above, and further has an operation mechanism 160 having its display mechanism. The control mechanism 166 is configured to control the devices in the exposure processing unit 5. Further, the control mechanism 166 is configured to transmit and receive signals by communication with the management host computer 182 of the factory where the apparatus is arranged. (L in the drawing) Furthermore, the air aligner unit 3 is provided with a control mechanism 180 that controls the devices in the air aligner unit 3. The control mechanism 180 includes an operation mechanism 181 having a display mechanism. It is connected. The operation mechanism 181 may be omitted if the above-described operation mechanism 160 can be used as a substitute. However, if necessary, for example, when the air aligner unit 3 is manufactured and sold independently as a single device, or connected during maintenance. It is configured freely.

  Further, as described above, the control mechanism 180 transmits / receives signals to / from the control mechanism 53 that controls the heat treatment unit, and further transmits / receives signals to / from the control mechanism 183 that controls the transport mechanism 20. (M in the figure). The control mechanism 180 is configured to transmit and receive signals via the control mechanism 184 on the resist processing apparatus 2 side and the signal line 185, and the control mechanism 184 is connected to the operation panel 14 having a display mechanism. Yes. As a signal in transmission / reception of a signal with the resist processing apparatus 2 side, in addition to a signal related to the transfer of the semiconductor wafer W between the transfer mechanism 20 and the transfer unit 10 or the receiving part 11 on the resist processing apparatus 2 side, the above-described resist It is configured to receive a signal of the atmospheric pressure in the processing apparatus 2.

  Alternatively, the atmospheric pressure may be mutually confirmed by sending a signal of the atmospheric pressure in the atmospheric aligner unit 3 to the control mechanism 184 of the resist processing apparatus 2 via the control mechanism 180. Based on the information, the control mechanism 166 is configured to control the atmospheric pressure of the entire apparatus. Here, the control mechanism 180 and the control mechanism 184 have been described. However, the control mechanism 166 once receives a signal from the control mechanism 184 via the signal line 186, and gives an instruction to the control mechanism 180 from the control mechanism 166 to perform control. Needless to say.

  The control mechanism 166 and the control mechanism 180 transmit and receive signals via the signal line 187. As information from the control mechanism 180 to the control mechanism 166, the control mechanism 166 manages control of the entire apparatus. Therefore, it is needless to say that the state of each function in the atmospheric aligner unit 3 is configured to be received freely, but it is important among the signals transmitted from the control mechanism 166 to the control mechanism 180. As one of the signals, the semiconductor wafer W is subjected to an exposure process in the exposure processing chamber 4, and the control mechanism 53 is instructed via the control mechanism 180 on the basis of a time such as a start time or an end time of the process to perform a heating process. It is necessary to manage the time to start.

  Such time management from the exposure process to the heat treatment of PEB is caused by the fact that the state of the resist film formed on the semiconductor wafer W changes with time (changes with time). Become one. This management is therefore important. Accordingly, since an instruction is given by the control mechanism 166 that manages the entire exposure apparatus, this reduction in yield is suppressed.

  In addition, from the viewpoint of the temporal change in the state of the resist film formed on the semiconductor wafer W, the control device 184 on the resist processing apparatus 2 side notifies the control mechanism 180 of the end time of the resist coating, and the atmospheric aligner 3 The control mechanism 166 notifies the control mechanism 166 of time information such as the transfer time in the transfer time in the decompression transfer chamber 70, the preliminary vacuum chamber 60, and the exposure processing chamber 4, and / or the resist film in the reduced pressure atmosphere. Taking the state change factor into consideration, the exposure processing chamber 4 performs an exposure process on the semiconductor wafer W. Further, for the semiconductor wafer W for which the exposure process has been completed, the control mechanism 180 similarly manages the time management such as the start time of the PEB heating process based on information from the control mechanism 166 in consideration of the change factor of the state of the resist film. Do.

  Furthermore, the control mechanism 180 transmits information such as the time until delivery to the resist processing apparatus 2 to the control mechanism 184 based on the end of the PEB heating process, and the control mechanism 184 performs time management on the semiconductor wafer W and the like. And the start time of the developing process for the resist film formed on the semiconductor wafer W is managed. Thereby, the difference between the substrates in the processing of the plurality of semiconductor wafers W can be suppressed, and the yield is improved. In the above description, the control mechanism 180 is interposed, but it goes without saying that the control mechanism 166 may have at least a part of the function of the control mechanism 180. Further, such information is stored in a storage mechanism of each control mechanism, for example, a volatile memory, a CDR, etc., and the stored information is configured to be freely displayed by a display mechanism of each operation mechanism.

  Further, the control mechanism 166 or the control mechanism 180 can transmit the time information such as the end time of the heating process of PEB in the air aligner unit 3 and / or the atmosphere information in the air aligner unit 3 to the control mechanism 184 so that data can be transmitted. The control mechanism 184 is configured to manage the time until development is started, and to improve the yield of the semiconductor wafer W. In addition, the control mechanism 166 or the control mechanism 180 receives the time for applying the resist solution from the control mechanism 184, the time for applying the heat treatment after applying the resist solution, or the heat information of the heat treatment, and the time for starting the exposure process. Configured to manage.

  Further, the control mechanism 166 detects a pressure of a predetermined section in the exposure processing chamber 5, for example, a pressure detection mechanism for detecting the pressure of the predetermined section in the area Z11, Z12, Z13, Z14, Z15. A pressure detection mechanism, for example, a pressure sensor group 191, and a pressure detection mechanism, for example, a pressure sensor 192, for detecting the pressure of a predetermined section in the preliminary vacuum chamber 60 are respectively connected.

  Further, the control mechanism 180 detects a pressure of a predetermined section in the atmospheric aligner unit 3 such as a pressure sensor 193, and detects a chemical component of the predetermined section in the atmospheric aligner unit 3, such as an ammonia component. A chemical detection mechanism 194 is connected. Further, the control mechanism 184 detects a pressure detecting mechanism for detecting the pressure of a predetermined section in the resist processing apparatus 2, for example, a pressure sensor 195, and detects a chemical component of the predetermined section in the resist processing apparatus 2, such as an ammonia component. A chemical detection mechanism 196 is connected to each other.

  Further, the control mechanism 166 and / or the control mechanism 184 is connected to a pressure detection mechanism, for example, a pressure sensor 197 that detects pressure outside the apparatus, for example, in a clean room in which the apparatus is disposed. In this way, the pressure of each department is appropriately monitored. Here, the chemical component is monitored by the chemical detection mechanism in the resist processing apparatus 2 and the air aligner unit 3 because the chemical component is critical to the processing of the semiconductor wafer W in the processing unit in the resist processing apparatus 2. It is because it is one of the components that give a certain defect. Therefore, it is necessary to monitor not only in the resist processing apparatus 2 but also in the air aligner unit 3.

  The substrate processing apparatus according to one embodiment of the present invention is configured as described above. Next, operations related to the processing of the semiconductor wafer W will be described.

  First, a resist solution is applied to the processing surface of the semiconductor wafer W by a coating device (coater; COT) unit for applying a resist solution in the resist processing apparatus 2, and then the semiconductor wafer W is formed at a predetermined temperature. Heat treatment is performed, and the temperature is adjusted to approximately the same temperature as the atmospheric temperature in the resist processing apparatus 2. Thereafter, the semiconductor wafer W is transferred to the alignment mechanism 15 and aligned by the transfer mechanism 12 (first positioning in the resist processing apparatus 2). Thereafter, the semiconductor wafer W is transferred to the transfer unit 10 by the transfer mechanism 12 and positioned by physical dropping (second positioning in the resist processing apparatus 2). The control mechanism 184 transmits a “transfer preparation complete” signal to the control mechanism 166 and / or the control mechanism 180 after confirming the presence or absence of the semiconductor wafer W in the transfer unit 10 with a sensor.

  The transmission control mechanism 166 and / or the control mechanism 180 that has received this “transfer ready” signal receives the semiconductor wafer W from the transfer unit 10 by the transfer mechanism 20 and uses the sensor of the transfer mechanism 20 to determine whether or not the semiconductor wafer W is present. After confirming with the sensor, a signal of “unloading completion” is transmitted to the control mechanism 184. In parallel, the transfer mechanism 20 transfers the semiconductor wafer W to the alignment mechanism 21 for alignment (positioning in the atmospheric aligner unit 3). During this transfer process, the semiconductor wafer W is set to the temperature substantially equal to or lower than the atmospheric temperature in the resist processing apparatus 2 at the atmospheric temperature in the air aligner unit 3.

  Further, after the above process, the semiconductor wafer W is carried into the preliminary vacuum chamber 60 which is a substrate carry-in / out part of the exposure processing unit 5 by the carrying mechanism 20. The preliminary vacuum chamber 60 is set to a predetermined reduced pressure value from a positive pressure higher than the atmospheric pressure in the air aligner unit 3 (this reduced pressure value is a pressure value when transferring the semiconductor wafer W to the reduced pressure transfer chamber 70 described later) The pressure is substantially the same (the pressure in the preliminary vacuum chamber 60 may be set so that the lower pressure value does not allow particles to enter the decompression transfer chamber 70)). To do. After the end of evacuation or in the middle of evacuation, the plurality of CCD cameras 65 detect the state of the position of the semiconductor wafer W (position detection step). Thereafter, the opening / closing mechanism 67 is opened, and the semiconductor wafer W is transferred from the preliminary vacuum chamber 60 into the reduced pressure transfer chamber 70 by the transfer mechanism 72 of the reduced pressure transfer chamber 70, and the opening / closing mechanism 67 is closed.

Thereafter, the pressure in the reduced pressure transfer chamber 70 is substantially the same as the pressure in the exposure processing unit 90 set to a predetermined reduced pressure value (the pressure value in the reduced pressure transfer chamber 70 is slightly lower in the exposure processing unit 90). The vacuum pump 83 is driven so that the particles may not be allowed to enter. Thereafter, the opening / closing mechanism 92 is opened, and the transfer mechanism 72 in the decompression transfer chamber 70 adjusts the angle of entry of the semiconductor wafer W into the exposure processing unit 90 based on the position detection data of the CCD camera 65 described above. Transport. Before or after the transfer, the stage 91 in the exposure processing unit 90 moves to a position where a delivery position of the semiconductor wafer W to the transfer mechanism 72 is assumed. (First positioning in the exposure processing unit 5)
Further, a support mechanism that is provided on the stage 91 and supports from the back side of the semiconductor wafer W, for example, the semiconductor wafer W of the transport mechanism 72 is received by raising a plurality of support pins, and the electrostatic chuck is lowered by lowering the support pins. A semiconductor wafer W is placed on the insulator portion 299 of the mechanism 110. During or after this, the opening / closing mechanism 92 is closed after the transport mechanism 72 is retracted from the exposure processing unit 90.

  Next, the semiconductor wafer W is placed on the insulator portion 299 of the electrostatic chuck mechanism 110. Thereafter, the conduction needle 305 is moved and pressed by the moving mechanism 306 against the predetermined film on the processing surface of the semiconductor wafer W. Next, the semiconductor wafer W is electrostatically attracted onto the electrostatic chuck mechanism 110. Thereafter, the conductive needle 303 is moved and pressed against the above-mentioned predetermined film on the back side of the semiconductor wafer W by a vertical movement mechanism 304 as a moving mechanism, and the charge charged on the semiconductor wafer W is below a predetermined value. Static electricity is removed.

  Next, the alignment mark of the semiconductor wafer W held by the electrostatic chuck mechanism 110 on the stage 91 is detected by the mark detection mechanism 105 in the exposure processing unit 90, and the stage 91 determines whether the stage 91 is XY based on this detection data. The semiconductor wafer W is moved and finally aligned. (Second positioning in the exposure processing unit 5) After completion of this alignment, the resist film formed on the semiconductor wafer W from the column 100 is accelerated voltage, for example, a predetermined voltage between 1-60 KV, preferably An electron beam is irradiated at a predetermined voltage between 1 to 10 KV, more preferably 5 KV, and an exposure process is performed so that a predetermined pattern is formed. Here, the accelerating voltage of the electron beam is preferably set to a voltage at which the electron beam acts on the resist film formed on the semiconductor wafer W. Although it depends on the relationship with the pressure, it is important to prevent the electrons of the irradiated electron beam from diffusing into silicon (Si) which is the base of the semiconductor wafer W. In the exposure process, the first conductive film provided in the space of each electrostatic deflector in the column 100 is grounded.

  After the exposure processing is completed, the stage 91 moves to the transfer position of the semiconductor wafer W with the transfer mechanism 72, first, the voltage applied to the first electrode 300 and the second electrode 301 is turned off, and further SW2 and SW5 When the current value of the leakage current flowing through the conductive needle 303 or / and the conductive needle 305 is measured and the value is not a specified value, a predetermined voltage is applied to the conductive needle 303 or / and the conductive needle 305 at least once. Apply or treat as an error. After determining that the current value of the leakage current is within the specified value, after confirming the release of the contact between the conductive needle 305 and the conductive needle 303 with the semiconductor wafer W, the semiconductor wafer W is separated from the electrostatic chuck mechanism 110, and the transfer mechanism 72. Is carried out of the exposure processing chamber 4.

  Thereafter, the semiconductor wafer W is carried out to the preliminary vacuum chamber 60 by the transfer mechanism 72. The semiconductor wafer W in the preliminary vacuum chamber 60 is unloaded from the preliminary vacuum chamber 60 by the transport mechanism 20 and is transported by the transport mechanism 20 to the temperature control plate 27 of the heat treatment unit 22. Here, based on the information calculated by the control mechanism 166 in consideration of the reduced pressure value, the time in the reduced pressure atmosphere, and the like based on the time when the exposure process described above is completed, the temperature adjustment plate 27 The semiconductor wafer W is placed on the heating plate 26 after a predetermined time has elapsed (the time is fixed for a plurality of semiconductor wafers W). Since it is necessary to make the time up to the heat treatment start time constant for a plurality of semiconductor wafers W, naturally, when waiting on the temperature control plate 27, the semiconductor wafer from the temperature control plate 27 to the heating plate 26 is used. In the case of making the W transfer time and the transfer mechanism 20 stand by, it is necessary to manage the transfer time from the transfer mechanism 20 to the temperature adjustment plate 27 and the transfer time of the semiconductor wafer W from the temperature adjustment plate 27 to the heating plate 26.

  The semiconductor wafer W heated at a predetermined temperature for a predetermined time on the heating plate 26 is transferred to the temperature control plate 27, and further transferred from the temperature control plate 27 to the transfer mechanism 20, and then transferred to the transfer mechanism 20. Is carried out of the heat treatment part 22 at. Thereafter, the transport mechanism 20 transports the semiconductor wafer W to the receiving portion 11 of the resist processing apparatus 2 after the semiconductor wafer W is once positioned by the positioning mechanism 21 or directly. For this transfer, the control mechanism 180 and / or the control mechanism 166 needs to inquire of the control mechanism 184 in advance whether or not the semiconductor wafer W is present in the receiving portion 11. Only when it is confirmed that there is not, the semiconductor wafer W is transferred to the receiving portion 11 of the resist processing apparatus 2. Further, the control mechanism 180 and / or the control mechanism 166 controls the substrate information of the semiconductor wafer W and information such as the time when the processing is completed in the heating plate 26 before or after the semiconductor wafer W is transferred to the receiving unit 11. It is assumed that it is transmitted to the mechanism 184.

  Based on this information, the control mechanism 184 transports the semiconductor wafer W to a developing device (developer; DEV) while performing temporal management, performs development processing, and ends a series of processing operations.

  Next, another embodiment of the substrate processing apparatus of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 31, the exposure processing chamber 4, the decompression transfer chamber 70, and the preliminary vacuum chamber 60 include a magnetic entrance suppression mechanism (first magnetic shield), for example, a magnetic shield member 121 that performs magnetic shielding non-electromagnetically, for example, The front and back, front, back, left and right surfaces are covered with a member made of a material such as permalloy, electromagnetic soft iron, electromagnetic steel, sendust, or ferrite. As described above, the reason for covering with this magnetic shield member is that the electron beam is affected by deflection or the like due to magnetism from the outside, and the purpose is to suppress the generation of yield for the exposure processing of the semiconductor wafer W. Yes. Although it is sufficient to cover the entire apparatus, it is unrealistic or uneconomical due to an increase in the size of the apparatus, and since the apparatus has a magnetic source such as a control device, the exposure processing chamber 4 and the reduced pressure It is preferable to cover the transfer chamber 70 and the preliminary vacuum chamber 60 itself. Further, it is conceivable to cover only the exposure processing chamber 4 and the column 100, but it is insufficient to prevent magnetism from the decompression transfer chamber 70 and the preliminary vacuum chamber 60. Therefore, it is preferable to cover at least the exposure processing chamber 4 and the decompression transfer chamber 70, and preferably cover the exposure processing chamber 4, the decompression transfer chamber 70, and the preliminary vacuum chamber 60. Further, from the viewpoint of downsizing of the system or the like, the exposure processing chamber 4 alone may be more preferable.

  Further, on the inner side of the magnetic shield member 121, a magnetic intrusion suppression mechanism (second magnetic shield), for example, a magnetic shield member 1500 that electromagnetically shields magnetically, for example, a helm foil coil is arranged on six front and rear surfaces such as up, down, left and right. Has been placed. A power source 1501 is connected to each of these helm foil coils 1500 so that a predetermined frequency and current value flow for each coil facing each other. Further, a magnetic sensor 1502 for measuring magnetism is disposed at a predetermined position in the inner region of the magnetic shield member 1500. Based on the measurement by the magnetic sensor 1502, the control mechanism 1503 allows a current to flow through a predetermined current value / frequency coil. Is directed to the power source 1501 to control the magnetic field in the region inside the magnetic shield member 1500.

  By adopting such a configuration, the exposure process chamber 4 can be further prevented from being affected by the magnetic field from the outside of the apparatus, so that the yield of the exposure process can be improved. Further, although the helm foil coil 1500 generates a kind of fluctuating magnetic field, it is covered with the magnetic shield member 121, so that it has an effect of suppressing the influence of the magnetic field outside the apparatus. Therefore, the magnetic field can be efficiently reduced to ½ or less of the magnetic field outside the apparatus.

  Further, the power supply 1501 is disposed on the side of the exposure processing chamber 4 facing the decompression transfer chamber 70 in the same manner as the amplifier unit 130 described above, and the position of the power supply 1501 is on the surface of the stage 91 where the semiconductor wafer W is placed. Irradiation of an electron beam irradiated to a column 100, a position above the height position h5, preferably a position above a transfer height position h6 of a transfer port 89 as a transfer port for the semiconductor wafer W in the exposure processing chamber 4. It is preferable to be disposed at a position above the position h7. This is because the influence on the electron beam used for the processing by the electromagnetic wave from the power source 1501 is taken into consideration.

  The magnetic sensor 1502 is preferably disposed at a predetermined position outside or inside the exposure processing chamber 4, and the influence of the magnetic field on the exposure processing of the semiconductor wafer W at the processing position in the exposure processing chamber 4 is small. Any position can be used as long as it can be controlled. If the magnetic sensor 1502 cannot be disposed in the exposure processing chamber 4, magnetic field data in the exposure processing chamber 4 is measured in advance by the control mechanism 1503 and magnetic data corresponding to the data obtained by controlling each coil is stored in the storage mechanism. Thus, each coil may be controlled based on the correlation with the magnetic sensor 1502 arranged outside the exposure processing chamber 4.

  As for the control of the helm foil coil 1500, as shown in FIG. 32, the left and right coils 1510 and 1511 and the upper and lower coils 1512 and 1513 are arranged (excluding description of the front and rear coils for the sake of convenience), but counteract each. A current flow in the same direction (arrow direction in the figure) is supplied from the power source 1501 to the coils, for example, the left and right coils 1510 and 1511, and similarly, a current flow in the same direction (arrow direction in the figure) is also supplied to the upper and lower coils 1512 and 1513. ) Is supplied from the power source 1501. Of course, the same applies to the front and rear coils. However, regarding the frequency or / and current value or / and DC (direct current component) value, for example, the frequency or / and current value of the left and right coils 1510 and 1511 are different, or the left and right coils 1510 and 1511 and the upper and lower coils are different. It is preferable to control the magnetic field at a predetermined position O to be a predetermined value, for example, 0 by controlling the frequency with respect to 1512 and 1513 or / and the current value or / and the DC value by the control mechanism 1503. In the description, the left and right coils 1510 and 1511 and the upper and lower coils 1512 and 1513 have been described for convenience, but it goes without saying that the relationship between the front and rear coils is appropriately controlled by a predetermined control. It is necessary to control the XYZ axes so that

  Further, the Helm foil coil 1500 is controlled by the value of the above-described electrostatic chuck ammeter 320 in accordance with the accumulation of electric charges with time of the electrostatic chuck itself or based on prestored data. Needless to say, if necessary, control should be taken into consideration. Further, since the helm foil coil 1500 generates a variable magnetic field as described above, there is a risk of generating a magnetic field outside the apparatus. Therefore, the magnetic shield member 121 has been used as a magnetic entry suppression mechanism in the sense of suppressing the entry of a magnetic field into the device, but suppresses the generation of a magnetic field that does not diffuse the magnetic field from the helm foil coil 1500 outside the device. It also has a function called a mechanism.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 33, a concave portion 1600 as a circular notch is formed on the upper surface (the upper portion (on the electron gun 501 side) in the figure) of the cylindrical base material 612 of the electrostatic deflector. A convex portion 1601 as a circular projecting portion is formed on the lower surface of the cylindrical base 612 of the deflector (the lower portion in the drawing (the side where the semiconductor wafer W is disposed)). With this configuration, when the electrostatic deflector and the electrostatic deflector, or a support member formed of an insulator or the like as another member is interposed between the upper and lower layers, positioning is easy and maintenance is possible. Alternatively, the time required for attachment can be shortened and the efficiency can be improved. Note that the outside of the concave portion 1600 and / or the convex portion 1601 is cut from the middle of the middle layer 604, but may be formed only in the inner layer 606.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 34, a first recess 1600 as a circular notch is formed on the upper surface (upper part (on the electron gun 501 side) in the figure) of the cylindrical base 612 of the electrostatic deflector. A second recess 1602 as a circular notch is formed on the lower surface of the cylindrical base 612 of the electrostatic deflector (lower part in the figure (the side where the semiconductor wafer W is arranged)). With this configuration, when the electrostatic deflector and the electrostatic deflector, or a support member formed of an insulator or the like as another member is interposed between the upper and lower layers, positioning is easy and maintenance is possible. Alternatively, the time required for attachment can be shortened and the efficiency can be improved. The outer sides of the recesses 1600 and 1602 are cut from the middle of the middle layer 604, but may be formed only on the inner layer 606.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 35, a first recess 1600 as a ring-shaped notch is formed on the upper surface (upper part (on the electron gun 501 side) in the figure) of the cylindrical base member 612 of the electrostatic deflector. A second recess 1602 as a ring-shaped notch is formed on the lower surface (lower part in the drawing (on the side where the semiconductor wafer W is disposed)) of the cylindrical substrate 612 of the electrostatic deflector. Further, a third recess 1603 as a circular notch is formed inside the first recess 1600 and / or the second recess 1602. By projecting only the middle layer 604 of the electrically insulating material in this way, for example, when electrostatic deflectors are stacked one above the other, only the middle layer 604 is brought into contact with each other, so other members such as insulators can be used. It is not necessary to interpose the formed support member, and the efficiency of the system can be improved. The outer layer 601 has a fourth recess 1604 as a ring-shaped notch. Such a configuration facilitates support by a support member formed of an insulator or the like as another member from the outer periphery of the electrostatic deflector. The outer sides of the recesses 1600, 1602, and 1603 are cut from the middle of the middle layer 604, but may be formed only on the inner layer 606. As described above, an example in which various convex portions and / or concave portions are provided on the upper surface and / or lower surface side of the electrostatic deflector has been described. Various convex portions and / or concave portions may be provided on the upper surface and / or lower surface side of the electrostatic deflector.

  Next, manufacture in the electrostatic deflector of a present Example is demonstrated. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 36, first, a predetermined member configured to be in contact with the voltage introduction terminal 605, for example, a conductive member 1700, is disposed on the electron beam passage portion 609 side of the inner layer 606 of the electrostatic deflector. In this conductive member 1700, the voltage introduction terminal 605 is inserted into the voltage introduction terminal hole 1605 from the outside of the outer layer 601, and the tip portion 1701 of the voltage introduction terminal 605 is pressed against the conductive member 1700 to electrostatically connect the voltage introduction terminal 605. Attach to the deflector itself. Note that the tip portion 1701 of the voltage introduction terminal 605 has a convex portion 1701, for example, a plurality of needle-shaped objects, in order to ensure electrical contact with the conductive member 1700. Thereafter, as shown in FIG. 37, the conductive member 1700 is scraped off to a predetermined thickness. The thickness at the time of scraping is preferably smaller than the thickness of the electrode film 603. Note that the conductive member 1700 can be called a sacrificial member because at least part of the conductive member 1700 is scraped off.

  Thereafter, the aforementioned electrode film 603 is formed with a predetermined thickness on the inner side 606 of the electrostatic deflector on the electron beam passage portion 609 side by sputtering or plating. At this time, it is preferable to prevent the electrode film 603 on the electron beam passage portion 609 side of the inner layer 606 of the electrostatic deflector from being uneven. Therefore, adverse effects are suppressed by making the surface flat with respect to the electron beam from the electron gun 501. As another example, the conductive member 1700 is disposed after the base film (first film) of the electrode film 603 is once formed, and the conductive member 1700 is connected to the voltage introduction terminal hole 1605. The voltage introduction terminal 605 is inserted from the outside of the outer layer 601, the tip portion 1701 of the voltage introduction terminal 605 is pressed against the conductive member 1700, and the voltage introduction terminal 605 is attached to the electrostatic deflector itself. Thereafter, the conductive member 1700 is scraped off to a predetermined thickness. Thereafter, the electrode film 603 as the main film (second film) described above may be formed to a predetermined thickness on the electron beam passage portion 609 side of the inner layer 606 of the electrostatic deflector by a sputtering method or a plating method. Good.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 38, the space 608 of the cylindrical substrate 612 of the electrostatic deflector is formed in an elliptical shape, and a plurality of, for example, two elliptical concave portions 1800 are provided. A part of the electrode 603 is evenly formed up to a predetermined part of the space 608. Further, the first conductive film 602 is arranged from the vicinity of the terminal end of the recess 1800. Thus, by forming the space portion 608 in an elliptical shape, the radial size of the electrostatic deflector itself can be reduced. In addition, the provision of the concave portion 1800 can secure a substantial volume of the space portion 608 itself and suppress the occurrence of problems such as abnormal discharge.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 39, the cylindrical base material 612 of the electrostatic deflector has an inner layer 1800 parts made of a conductive member, for example, a metal, and an outer layer 601 is formed on the outer periphery thereof by the aforementioned insulating member, for example, ceramics. Yes. Here, the electrostatic deflector is an eight-pole electrode. As shown in FIG. 40, the communication portion 607 is configured such that grooves are formed radially from the center portion of the electrostatic deflector so that the outer layer 601 can be visually observed from the center portion of the electrostatic deflector. Further, since the material of the inner layer 1800 and the outer layer 601 are substantially different, they are integrated by bonding or brazing. With such a configuration, there is an effect that the insulating area can be reduced with respect to one communication portion 607 (groove) as compared with the prior art. Further, since the groove processing is made of metal, there is an advantage that the processing is easy. Further, since the processing becomes easy, it is possible to increase the aspect ratio (groove length / groove width) up to the outer layer 601 that is an insulating portion, and it is possible to form a deflection electrode with a small drift.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 41, the cylindrical base material 612 communicating portion 607 of the electrostatic deflector is formed in a plurality of steps although a radial groove is formed from the center of the electrostatic deflector. Therefore, a groove is formed radially from the central portion of the electrostatic deflector, and the outer layer 601 is not visible from the central portion of the electrostatic deflector. With this configuration, the aspect ratio (groove length / groove width) can be increased as described above, and a deflection electrode with a small drift can be formed.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 42, the cylindrical base member 612 communicating portion 607 of the electrostatic deflector has a radial groove from the central portion of the electrostatic deflector or a predetermined angle (radial from the central portion of the electrostatic deflector). 1st angle), for example, when the radial shape is 0 degree, after a predetermined distance from a linear groove of θ1 degree, from the central part of the electrostatic deflector or from the central part of the electrostatic deflector A predetermined angle (first angle) from the radial shape, for example, when the radial shape is 0 degree, it is formed with a straight groove of -θ2 degrees. Therefore, a groove is formed radially from the central portion of the electrostatic deflector, and the outer layer 601 is not visible from the central portion of the electrostatic deflector. With this configuration, the aspect ratio (groove length / groove width) can be increased as described above, and a deflection electrode with a small drift can be formed.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 43, a concave portion 1801 is formed in the inner layer 1800, and the structure is such that contact attachment in the stacking of the electrostatic deflectors or attachment positioning with the support member is facilitated. In the present embodiment, the thickness of the inner layer 1800 is thinner than the thickness of the outer layer 601, but for example, the concave portion 1801 may be formed from the middle of the outer layer 601 in the radial direction to the inner layer 1800, and is appropriately selected. Is possible. The cylindrical base member 612 communicating portion 607 of the electrostatic deflector is formed in a plurality of steps although a groove is radially formed from the central portion of the electrostatic deflector. Therefore, a groove is formed radially from the central portion of the electrostatic deflector, and the outer layer 601 is not visible from the central portion of the electrostatic deflector. With this configuration, the aspect ratio (groove length / groove width) can be increased as described above, and a deflection electrode with a small drift can be formed.

  Next, another embodiment of the electrostatic deflector of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 44, the cylindrical base member 612 of the electrostatic deflector is formed of a conductive member, for example, metal, with 1800 parts of the inner layer (this part is the part of the aforementioned inner layer 606), and the middle layer 604 is formed on the outer periphery thereof. The outer layer 601 is formed of the above-described insulating member, for example, ceramics. Here, the electrostatic deflector is an eight-pole electrode. As shown in FIG. 40, the communication portion 607 has a groove formed in the central portion of the electrostatic deflector or in a stepped shape (may be radial) so that the outer layer 601 cannot be seen visually from the central portion of the electrostatic deflector. It is configured. Further, the inner layer 1800 parts and the middle layer 604 are integrated with each other by joining or brazing because they are substantially different in material. With such a configuration, there is an effect that the insulating area can be reduced with respect to one communication portion 607 (groove) as compared with the prior art. Further, since the groove processing is made of metal, there is an advantage that the processing is easy. Further, since the processing becomes easy, it is possible to increase the aspect ratio (groove length / groove width) up to the outer layer 601 that is an insulating portion, and it is possible to form a deflection electrode with a small drift. Thus, it goes without saying that the configuration of the electrostatic deflector may be appropriately configured within the assumed range in the combination in the above embodiment.

  Next, another embodiment of the substrate processing apparatus of this example will be described. In addition, about the same structure as the Example mentioned above, detailed description shall be abbreviate | omitted by attaching | subjecting the same code | symbol. As shown in FIG. 45, when a magnetic field generating mechanism such as an exhaust mechanism, for example, an ion pump, for example, a coaxial ion pump, is used, a magnetic field 1900 in a certain direction is generated as shown in the figure. The magnetic field 1900 prevents the electron beam generated from the electron gun 501 from going straight and causes the bending 2002 to occur. In order to suppress this obstacle, the progress of the electron beam is corrected from outside the exposure processing chamber 4 surrounding the magnetic field generation source such as an ion pump, for example, the motor used in the moving mechanism, the power source, for example, the amplifier unit 130 or the control mechanism. A magnetic field suppression mechanism (third magnetic shield) as a deflection correction unit, for example, a magnetic shield member 2001 that performs magnetic shielding non-electromagnetically, such as a member made of a material such as permalloy, electromagnetic soft iron, electromagnetic steel, sendust, ferrite, etc. I have. The magnetic shield member 2001 is configured to correct the magnetic field 1900 and correct the bent portion 2002 of the electron beam by a moving mechanism (not shown). In addition, about the movement of the magnetic shield member 2001, you may comprise so that a movement mechanism may be controlled automatically by a control mechanism, and you may comprise so that positioning can be performed manually.

  Also, it is necessary when the magnetic shield member 2001 is not a fixed shield as described above, but a variable magnetic suppression mechanism (third magnetic shield), for example, a magnetic shield member that performs electromagnetic magnetic shielding, such as a helm foil coil. If not, the moving mechanism may not be provided. In addition, what generate | occur | produces such a magnetic field generate | occur | produces a DC magnetic field, and when the objective can be achieved, you may use such a shield. It is also conceivable to surround the column 100 itself with this shield.

  Any one of the relations with the magnetic shield member 1500 that is the above-described second magnetic shield may be arranged outside, for example, a third magnetic shield is arranged inside the second magnetic shield, or a third one is arranged. As a mixed arrangement of placing the second magnetic shield inside the magnetic shield or arranging the third magnetic shield inside the second magnetic shield and arranging the second magnetic shield inside the third magnetic shield Also good. However, the first magnetic shield as the fixed shield is preferably arranged outside the second magnetic shield and the third magnetic shield from the viewpoint of not generating magnetism outside the apparatus.

  As described above, in the present embodiment, since a space portion serving as an electron capture region is provided in the electrostatic deflector of the column incorporated in the electron beam irradiation apparatus provided in the exposure processing chamber, electrons enter the space portion. Therefore, it is difficult to return to the electron beam passage again. Furthermore, even if it is charged up by electrons entering the space, it is quickly discharged by the first conductive film. Therefore, the electron beam is not deflected to a place other than the target location by the charge-up, and the exposure accuracy is not lowered by the charge-up.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made based on the technical idea of the present invention. For example, in the above-described embodiments, the semiconductor wafer is described as the substrate to be processed. However, the substrate may be a substrate such as an LCD substrate. Further, for example, the space portion has a circular shape having a curved portion, but is not limited thereto.

It is a schematic plan view which shows the structure of the substrate processing apparatus which concerns on one embodiment of this invention. It is a schematic perspective view explaining the structure which concerns on the atmospheric aligner shown in FIG. It is a schematic perspective view explaining the structure which concerns on the heat processing part shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the heat processing part shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the atmospheric aligner shown in FIG. It is a schematic plan view explaining the structure which concerns on the vacuum preliminary chamber shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the pressure reduction conveyance chamber shown in FIG. It is a schematic plan view explaining the structure which concerns on the exposure process part shown in FIG. It is a flowchart explaining the processing flow which concerns on the structure of the substrate processing apparatus shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the exposure process chamber shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the principal part of the exposure process chamber shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the principal part of the exposure process chamber shown in FIG. It is a schematic plan view explaining the structure which concerns on the principal part of the stage shown in FIG. It is a figure explaining the structure which concerns on the electrostatic chuck mechanism part of the exposure process chamber shown in FIG. It is a conceptual diagram which shows the basic composition of the electron beam irradiation apparatus provided in the exposure processing chamber shown in FIG. It is a schematic perspective view of the electrostatic deflector of the column of the electron beam irradiation apparatus shown in FIG. It is the top view which looked at the electrostatic deflector shown in FIG. 16 from upper direction. It is the schematic perspective view which cut | disconnected the electrostatic deflector shown in FIG. 16 to the axial direction. FIG. 17 is a partial plan view of the electrostatic deflector shown in FIG. 16. It is the top view which looked at the electrostatic deflector of the modification from the upper part. It is the top view which looked at the electrostatic deflector of another modification from the upper part. It is the top view which looked at the electrostatic deflector of another modification from the upper part. It is a schematic perspective view of the lens of the column of the electron beam irradiation apparatus shown in FIG. FIG. 24 is a schematic sectional view taken along line AA ′ of the lens shown in FIG. 23. It is a schematic plan view explaining the structure which concerns on the substrate processing apparatus shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the substrate processing apparatus shown in FIG. It is a schematic sectional drawing explaining the structure which concerns on the substrate processing apparatus shown in FIG. It is a schematic perspective view explaining the structure which concerns on the substrate processing apparatus shown in FIG. It is a schematic plan view explaining the structure which concerns on the substrate processing apparatus shown in FIG. It is a schematic explanatory drawing explaining the structure of the control system of the substrate processing apparatus shown in FIG. It is a schematic plan view which shows the structure of the substrate processing apparatus which concerns on other embodiment of this invention shown in FIG. FIG. 32 is a schematic perspective view showing a configuration related to the Helmholtz coil shown in FIG. 31. It is a schematic sectional drawing explaining another electrostatic deflector. It is a schematic sectional drawing explaining another electrostatic deflector. It is a schematic sectional drawing explaining another electrostatic deflector. It is a schematic sectional drawing explaining the manufacturing process of the electrostatic deflector shown in FIG. It is a schematic sectional drawing explaining the manufacturing process of the electrostatic deflector shown in FIG. It is a schematic perspective view explaining another electrostatic deflector. It is a schematic perspective view explaining another electrostatic deflector. It is a schematic perspective view explaining the principal part of the electrostatic deflector of FIG. It is a schematic perspective view explaining the other electrostatic deflector of FIG. It is a schematic perspective view explaining the other electrostatic deflector of FIG. It is a schematic sectional drawing explaining the other electrostatic deflector of FIG. It is a schematic plan view explaining the other electrostatic deflector of FIG. It is a schematic explanatory drawing which shows the structure of the substrate processing apparatus which concerns on other embodiment of this invention shown in FIG. FIG. 25 is a schematic cross-sectional view according to another embodiment of the lens shown in FIG. 24. FIG. 25 is a schematic cross-sectional view according to another embodiment of the lens shown in FIG. 24. 48 is a schematic cross-sectional view according to another embodiment of the lens shown in FIG. 47. FIG.

Explanation of symbols

500 Electron Beam Irradiation Device 501 Electron Gun 521 First Adjustment Electrostatic Deflector (AL1)
522 Electrostatic deflector for second adjustment (AL2)
523 Third adjustment electrostatic deflector (AL3)
524 Fourth adjustment electrostatic deflector (AL4)
525 Electrostatic deflector for fifth adjustment (AL5)
526 Sixth adjustment electrostatic deflector (AL6)
531 Electrostatic deflection air for the first blanking (BLK1)
532 Electrostatic deflection air for second blanking (BLK2)
541 First CP deflector (CP1)
542 Second CP deflector (CP2)
602 First conductive film 603 Deflection electrode 604 Middle layer 607 Communication part 607a First communication part 607b Second communication part 608 Space part 609 Electron beam passage part 610 Second conductive film 611 Gap part 612 Cylindrical substrate 703 Connection conductive film 707 Communication 1521, 2521, 3521 Electrostatic deflector

Claims (31)

A cylindrical substrate having an electron beam passage part;
A plurality of deflection electrodes provided along the cylinder axis on the inner wall surface of the cylindrical substrate and electrically separated from each other;
A space portion that communicates with a gap portion between the plurality of adjacent deflection electrodes, and is located outside the gap portion when viewed from the electron beam passage portion; and
An electrostatic deflector comprising: a first conductive film provided in the space portion.   The electrostatic deflector according to claim 1, wherein the deflection electrode and the first conductive film are insulated.   The electrostatic deflector according to claim 1, wherein the front space is wider than the gap.   The electrostatic deflector according to any one of claims 1 to 3, wherein the space portion is curved.   5. The static electricity according to claim 1, wherein the first conductive film is provided in a region that is visible when the space portion is viewed from the electron beam passage portion. Electric deflector.   The electrostatic deflector according to any one of claims 1 to 5, further comprising a communication portion that communicates the gap portion and the space portion.   The communication part includes a first communication part that communicates with the electron beam passage part, and a second communication part that communicates with the space part that is wider than the first communication part and narrower than the space part. The electrostatic deflector according to claim 6.   8. A second conductive film that is electrically connected to each of the deflection electrodes and is provided in the communicating portion that is insulated from the first conductive film. 9. The electrostatic deflector described in 1.   9. The electrostatic deflector according to claim 1, further comprising a connection conductive film that electrically connects the first conductive film provided in each of the space portions. 10.   The electrostatic deflector according to claim 1, wherein the first conductive film is grounded.   The electrostatic deflector according to any one of claims 1 to 10, further comprising an insulating region provided between the deflection electrode and the first conductive film.   The electrostatic deflector according to any one of claims 1 to 11, wherein the deflection electrode and the first conductive film are made of the same member. The electrostatic deflector according to any one of claims 1 to 12, wherein the member of the cylindrical base material is an Ωcm ceramic having a specific resistance of 10 ⁷ to 10 ¹⁰ .   The electrostatic deflector according to claim 1, wherein the deflection electrode is a metal film.   The electrostatic deflector according to claim 14, wherein the metal film is made of a platinum group metal.   The electrostatic deflector according to claim 15, wherein the platinum group metal is any one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.   The electrostatic deflector according to any one of claims 1 to 13, wherein the deflection electrode is made of a conductive oxide.   The electrostatic deflector according to claim 17, wherein the conductive oxide is any one of ruthenium oxide, iridium oxide, and platinum oxide.   The electrostatic deflector according to any one of claims 1 to 18, further comprising a temperature adjusting mechanism capable of setting the electrostatic deflector to a predetermined temperature. An electron beam irradiation apparatus comprising: an electron gun that emits an electron beam; and an electrostatic deflector that controls the electron beam,
The electrostatic deflector includes a cylindrical base material having an electron beam passage portion, a plurality of deflection electrodes provided on the inner wall surface of the cylindrical base material along the cylindrical axis, and electrically separated from each other. A space portion that communicates with a gap portion between the plurality of deflection electrodes and that is located outside the gap portion when viewed from the electron beam passage portion; and a first conductive film provided in the space portion. An electron beam irradiation apparatus characterized by the above. In a substrate processing apparatus for processing by irradiating a substrate to be processed with an electron beam,
An electron beam generating mechanism that emits an electron beam, a first region having a plurality of electrostatic deflectors whose thickness gradually increases in the traveling direction of the electron beam, and a downstream side of the electron beam in the first region And a second region having a plurality of electrostatic deflectors having substantially the same thickness in the traveling direction of the electron beam. In a substrate processing apparatus for processing by irradiating a substrate to be processed with an electron beam,
An electron beam generating mechanism that emits an electron beam, a first region having a plurality of electrostatic deflectors whose thickness gradually increases in the traveling direction of the electron beam, and a downstream side of the electron beam in the first region At least one second region having a plurality of electrostatic deflectors having a thickness substantially the same in the traveling direction of the electron beam, and at least one each in the first region and the second region, the traveling direction of the electron beam A substrate processing apparatus, comprising: a plurality of lenses having a gradually decreasing thickness toward the surface. In a substrate processing apparatus for processing by irradiating a substrate to be processed with an electron beam,
An electron beam generating mechanism for emitting an electron beam, a first region having a plurality of electrostatic deflectors having a first pole number in the traveling direction of the electron beam, and the downstream side of the electron beam in the first region A second region having an electrostatic deflector having a second pole number which is a number obtained by dividing the first pole number by an even number and / or a number obtained by multiplying the first pole number by an even number; A substrate processing apparatus comprising: In a substrate processing apparatus for processing by irradiating a substrate to be processed with an electron beam,
An electron beam generating mechanism for emitting an electron beam, a first region having a plurality of electrostatic deflectors having a first pole number in the traveling direction of the electron beam, and the downstream side of the electron beam in the first region A second region having an electrostatic deflector having a second number of poles obtained by dividing the first number of poles by an even number, and a number obtained by multiplying the first number of poles by an even number. And a third region having an electrostatic deflector having at least one third pole number greater than the first pole number and the second pole number of the substrate processing apparatus. .   25 or 24, wherein at least one lens is provided in each of the first region and the second region, and a plurality of lenses are provided which gradually decrease in thickness toward the traveling direction of the electron beam. Substrate processing equipment. In a substrate processing apparatus for irradiating and processing an electron beam from a column electron beam generating mechanism on a substrate to be processed in a processing chamber configured to be freely evacuated by an exhaust mechanism,
A magnetic shield mechanism disposed near or around the exhaust mechanism or / and the column to substantially deflect the progress of the electron beam from outside the processing apparatus; a moving mechanism configured to move the magnetic shield mechanism; A substrate processing apparatus comprising: a plurality of electrostatic deflectors provided therein for substantially deflecting the progress of an electron beam from within the processing apparatus.   The substrate processing according to any one of claims 21 to 26, wherein the electrostatic deflector uses the electrostatic deflector according to any one of claims 1 to 19. apparatus.   A substrate processing method for processing a substrate to be processed using the substrate processing apparatus according to any one of claims 21 to 27. In a substrate processing method for processing by irradiating a substrate to be processed with an electron beam,
The electron beam is deflected by each of a plurality of electrostatic deflectors whose thickness gradually increases in the traveling direction of the electron beam in the first region, and the electron beam is deflected by the first lens having the first thickness. A plurality of electrostatic deflectors having substantially the same thickness in the traveling direction of the electron beam in the second region provided on the downstream side of the electron beam in the first region; And a step of focusing and controlling the electron beam with a second lens having a thickness smaller than the first thickness by deflecting each electron beam. In a substrate processing method for processing by irradiating a substrate to be processed with an electron beam,
The electron beam is deflected by a plurality of electrostatic deflectors having a first pole number in the first region in the traveling direction of the electron beam, and the first lens having a first thickness is used. The process of focusing and controlling
In the second region provided on the downstream side of the electron beam in the first region, a static pole having a second pole number equal to the first pole number divided by an even number in the traveling direction of the electron beam. A step of deflecting each electron beam with an electric deflector and focusing and controlling the electron beam with a second lens having a thickness smaller than the first thickness;
A first pole number that is a number obtained by multiplying the first pole number by an even number toward the traveling direction of the electron beam in a third region provided downstream of the electron beam in the second region. And each of the electron beams is deflected by an electrostatic deflector having at least one third pole number greater than the second pole number, and electrons are deflected by a third lens having a thickness smaller than the second thickness. And a step of focusing and controlling the line.   A method for manufacturing a substrate, comprising processing and manufacturing a substrate to be processed using the substrate processing method according to any one of claims 28 to 30.

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