JP2007293076A - Electrooptical apparatus, electronic equipment, and method for manufacturing electrooptical apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stabilize the light emission intensity of an organic EL element by suppressing the transient phenomenon of the current supplied to the organic EL element. <P>SOLUTION: The electrooptical apparatus includes the organic EL element 300 including a pixel electrode 107, a counter electrode 108 facing the pixel electrode 107, and a light emission function layer 110 held between the pixel electrode 107 and the counter electrode 108, a driving circuit including at least one TFT section 200 and driving the organic EL element 300, and a capacitor 114 for absorbing the transient current in which one of two electrode plates is connected to a power source line 103 and the other is connected to a ground line 115. The capacitor 114 for absorbing the transient current is disposed on the lower layer of the light emission function layer 110. The first electrode plate 114a, nearer the light emission function layer 110, of the two electrode plates of the capacitor 114 for absorbing the transient current is used commonly as a reflection plate for reflecting the light emitted by the light emission function layer 110. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electro-optical device, an electronic apparatus, and a method for manufacturing the electro-optical device.

  An organic EL (Electro Luminescence) display device is an electro-optical device that uses an organic EL element as an electro-optical element. The organic EL display device has excellent features such as self-luminance, high brightness, high viewing angle, thinness, high-speed response, and low power consumption, and is further reduced in size by a peripheral drive circuit using a polysilicon TFT (Thin Film Transistor). It is attracting attention because it can be made lighter and lighter.

  Since the organic EL element is a current driving element, it is desirable that the current supplied to the organic EL element is in a steady state. However, a transient phenomenon actually occurs at the initial stage of current supply, and the light emission intensity of the organic EL element fluctuates due to the transient phenomenon, and the luminance may not be stabilized.

  As a means for protecting a circuit from a current transient phenomenon, for example, Patent Document 1 discloses a technique of providing a capacitor in a circuit.

JP-A-2-223376

  An object of the present invention is to suppress the transient phenomenon of the current supplied to the organic EL element and to stabilize the emission intensity of the organic EL element.

The electro-optical device of the present invention includes a light emitting element including a pixel electrode, a counter electrode facing the pixel electrode, a light emitting functional layer sandwiched between the pixel electrode and the counter electrode, and at least one transistor. Including a drive circuit for driving the light emitting element, a transient current absorption capacitor in which one of the two electrode plates is connected to a power supply line and the other is connected to a ground line, The first electrode plate that is provided in the lower layer of the light emitting functional layer and is close to the light emitting functional layer among the two electrode plates also serves as a reflecting plate that reflects light emitted from the light emitting functional layer. It is characterized by this.
Thereby, the transient phenomenon of the current supplied to the organic EL element can be suppressed, and the emission intensity of the organic EL element can be stabilized.
Further, since the first electrode plate also serves as the reflecting plate, it is not necessary to use the pixel electrode as a metal, and the light emission efficiency can be improved.

The electro-optical device according to the aspect of the invention includes a plurality of scanning lines, a plurality of signal lines arranged orthogonal to the scanning lines, a plurality of power supply lines, and the vicinity of an intersection of each scanning line and each signal line. The pixel unit includes a selection transistor to which a scanning signal is supplied to a gate via the scanning line, and a pixel signal supplied from the signal line to the gate via the selection transistor. A driving transistor supplied to the pixel, a pixel electrode through which a driving current flows from the power supply line when electrically connected to the power supply line via the driving transistor, and a counter electrode facing the pixel electrode A light emitting functional layer sandwiched between the pixel electrode and the counter electrode, and a transient current absorbing capacitor in which one of two electrode plates is connected to the power supply line and the other is connected to a ground line. The transient current absorbing capacitor is provided below the light emitting functional layer, and the first electrode plate close to the light emitting functional layer of the two electrode plates reflects light emitted from the light emitting functional layer. It also serves as a reflective plate.
Thereby, the transient phenomenon of the current supplied to the organic EL element can be suppressed, and the emission intensity of the organic EL element can be stabilized.
Further, since the first electrode plate also serves as the reflecting plate, it is not necessary to use the pixel electrode as a metal, and the light emission efficiency can be improved.

The electro-optical device according to the aspect of the invention further includes a holding capacitor that holds a pixel signal supplied from the signal line through the selection transistor, and the pixel signal held by the holding capacitor is the driving transistor. Can be supplied to the gates of
Further, an erasing transistor may be further provided with a gate connected to the reset line, a source connected to the drain of the selection transistor, a drain connected to the ground line.
The pixel portion may include two transistors for compensating the gate voltage of the driving transistor.

  The driving circuit includes four transistors and one capacitor, and has a constant current source outside. A gate voltage of a driving transistor that controls a current flowing through the light emitting element is set to the constant current source. It may be determined by the amount of current.

In the electro-optical device according to the aspect of the invention, the first electrode plate of the transient current absorbing capacitor is formed in the same layer as the gate electrode of the transistor, and the second electrode plate facing the first electrode plate is It is desirable that the transistor be formed in the same layer as the semiconductor layer of the transistor.
Thus, it is not necessary to newly provide a manufacturing process for forming the transient current absorbing capacitor, and the first electrode plate and the second electrode plate can be formed simultaneously with the formation of the gate electrode and the semiconductor layer of the transistor. it can.

The first electrode plate of the transient current absorbing capacitor is formed in the same layer as the source electrode of the driving transistor, and the second electrode plate facing the first electrode plate is the driving electrode. It may be formed in the same layer as the gate electrode of the transistor.
Thus, the first electrode plate and the second electrode plate of the transient current absorbing capacitor can be formed simultaneously with the formation of the source electrode and the gate electrode of the transistor.

The first electrode plate is formed in the same layer as the source electrode of the driving transistor, and the second electrode plate facing the first electrode plate is the same as the semiconductor layer of the driving transistor. You may make it form in the layer of.
Thus, the first electrode plate and the second electrode plate of the transient current absorbing capacitor can be formed simultaneously with the formation of the source electrode and the semiconductor layer of the transistor.

In the electro-optical device according to the aspect of the invention, it is preferable that the distance between the light emitting functional layer and the reflection plate is adjusted so that the microcavity effect of the light is generated.
Thereby, the intensity of the emitted light can be increased.

The electro-optical device manufacturing method of the present invention includes at least one light emitting element including a pixel electrode, a counter electrode facing the pixel electrode, and a light emitting functional layer sandwiched between the pixel electrode and the counter electrode. An electro-optical device manufacturing method including two transistors and including a drive circuit for driving the light emitting element, wherein in the step of forming the transistors, two electrode plates are provided at a position below the light emitting functional layer. One is connected to the power supply line, the other is connected to the ground line, and the first electrode plate close to the light emitting functional layer of the two electrode plates reflects light emitted from the light emitting functional layer. A transient current absorbing capacitor also serving as a reflector is formed at the same time.
Thereby, the transient phenomenon of the current supplied to the organic EL element can be suppressed, and the emission intensity of the organic EL element can be stabilized.
Further, since the first electrode plate also serves as the reflecting plate, it is not necessary to use the pixel electrode as a metal, and the light emission efficiency can be improved.

According to another aspect of the invention, there is provided a method for manufacturing the electro-optical device, the step of forming the first electrode plate in the same layer as the gate electrode of the transistor and below the light emitting functional layer, and the semiconductor layer of the transistor; It is desirable to provide a step of forming a second electrode plate facing the first electrode plate at a position below the light emitting functional layer in the same layer.
Thus, it is not necessary to newly provide a manufacturing process for forming the transient current absorbing capacitor, and the first electrode plate and the second electrode plate can be formed simultaneously with the formation of the gate electrode and the semiconductor layer of the transistor. it can.

A step of forming the first electrode plate at a position below the light emitting functional layer in the same layer as the source electrode of the transistor; and a position below the light emitting functional layer in the same layer as the gate electrode of the transistor. In addition, a step of forming a second electrode plate facing the first electrode plate may be provided.
Thus, the first electrode plate and the second electrode plate of the transient current absorbing capacitor can be formed simultaneously with the formation of the source electrode and the gate electrode of the transistor.

A step of forming the first electrode plate at a position below the light emitting functional layer in the same layer as the source electrode of the transistor; and a position below the light emitting functional layer in the same layer as the semiconductor layer of the transistor. In addition, a step of forming a second electrode plate facing the first electrode plate may be provided.
Thus, the first electrode plate and the second electrode plate of the transient current absorbing capacitor can be formed simultaneously with the formation of the source electrode and the semiconductor layer of the transistor.

  In addition, an electronic apparatus of the present invention includes the above-described electro-optical device as a display unit. Here, the electronic device includes all devices including an electro-optical device as a display unit, and includes a display device, a television device, an electronic paper, a clock, a calculator, a mobile phone, a portable information terminal, and the like.

Embodiments of the present invention will be described below with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 is a diagram showing a circuit configuration of an organic EL device (electro-optical device) 100 which is an example of an electro-optical device according to the present invention. The organic EL device 100 includes a plurality of scanning lines 101, a plurality of signal lines 102 arranged orthogonal to the scanning lines 101, a plurality of power supply lines (power supply lines) 103 extending in parallel to the signal lines 102, It includes a plurality of pixel portions A provided near the intersections of the scanning lines 101 and the respective signal lines 102. That is, the organic EL device 100 of this example is an active matrix display device that includes a plurality of pixel portions A and in which the pixel portions are arranged in a matrix.

  Each scanning line 101 is connected to a scanning line driving circuit 105 including a shift register and a level shifter. Each signal line 102 is connected to a data line driving circuit 104 including a shift register, a level shifter, a video line, and an analog switch. In each pixel portion A, a switching transistor (selection transistor) 112 to which a scanning signal is supplied to the gate via the scanning line 101 and a capacitor for holding a pixel signal supplied from the signal line 102 via the switching transistor 112 (Holding capacitor) 111, a driving transistor 113 to which the pixel signal held by the capacitor 111 is supplied to the gate, and the power source line 103 through the driving transistor 113 A pixel electrode (anode) into which a driving current flows from the power supply line 103 and a light emitting functional layer sandwiched between a counter electrode (cathode) facing the pixel electrode are provided. An organic EL element (light emitting element) 300 is configured by these pixel electrodes, the counter electrode, and the light emitting functional layer. The light emitting functional layer includes a hole transport layer, a light emitting layer, and an electron injection layer.

  In the organic EL device 100, when the scanning line 101 is driven and the switching transistor 112 is turned on, the potential of the signal line 102 at that time is held in the capacitor 111, and the driving transistor is changed according to the state of the capacitor 111. The on / off state of 113 is determined. Then, a current flows from the power supply line 103 to the pixel electrode through the channel of the driving transistor 113, and a current flows to the cathode through the light emitting functional layer. The light emitting functional layer emits light according to this flowing current amount. A desired image display can be performed by controlling the light emission state of each light emitting functional layer.

  Further, the organic EL device 100 includes a capacitor (transient current absorbing capacitor) 114 having one electrode plate connected to the power supply line 103 and the other electrode plate connected to the ground line 115. The capacitor 114 suppresses a transient phenomenon of the current supplied to the organic EL element.

FIG. 2 is a plan view showing the configuration of the pixel portion A of the organic EL device 100. 3 is a cross-sectional view taken along the line BB ′ of FIG.
As shown in FIGS. 2 and 3, in the pixel portion A, an insulating layer 152 made of a SiO ₂ film is formed on a glass substrate 151, and a TFT portion 200, an organic EL element 300, and a capacitor 114 are formed thereon. Is formed.

The TFT unit 200 is a top gate type TFT as shown in the figure, for example, and a silicon layer 153 is formed on the insulating layer 152. The silicon layer 153 includes a source region 153S doped with an impurity at a high concentration, a drain region 153D, and a channel region 153C therebetween.
A gate insulating film 154 (SiO ₂ film) is formed on the silicon layer 153, and a gate electrode 155 is further formed thereon. An interlayer insulating film 156 is formed on the gate electrode 155. A source electrode 157 connected to the source region 153S is formed through an opening formed in the interlayer insulating film 156 and the underlying gate insulating film 154, and is made of a transparent conductive film such as ITO (Indium-Tin Oxide). It is connected to the pixel electrode 107.

The organic EL element 300 is formed on the insulating layer 160 (SiO ₂ layer), and includes a light emitting functional layer 110 sandwiched between the pixel electrode 107 and the counter electrode 108. The organic EL device 100 is an organic EL device having a top emission structure in which light is extracted from the opposite side (a direction in the figure) of the glass substrate 151. The organic EL device having the top emission structure has an advantage that the light emission area is not reduced by a TFT or the like provided on the substrate because the light extraction direction is opposite to the substrate. In an organic EL device having a top emission structure, the pixel electrode 107 is generally formed of metal so that it also serves as a reflector, and the light emitted from the light emitting functional layer 110 is reflected by the pixel electrode 107 to be opposite to the glass substrate 151. The light is taken out from the side.

  However, in the first embodiment, the pixel electrode 107 is a transparent electrode, and the first electrode plate 114a of the capacitor 114 provided in the layer below the organic EL element 300 is a reflecting plate. In general, an organic EL device is characterized in that a light-emitting efficiency is better when a transparent electrode is used as an anode (pixel electrode) than a metal electrode. Therefore, even in an organic EL device having a top emission structure, as in Embodiment 1. By using the first electrode plate 114a as a reflection plate, it is not necessary to use a metal for the anode, and the light emission efficiency can be increased.

In the capacitor 114, the first electrode plate 114 a is formed in the same layer as the gate electrode 155. The first electrode plate 114 a is formed of the same material as the gate electrode 155 and can be formed at the same time as the gate electrode 155 is formed. The second electrode plate 114b of the capacitor 114 is formed of the same material in the same layer as the silicon layer 153, and can be formed at the same time when the silicon layer 153 is formed.
The second electrode plate 114b is connected to the power supply line 103 through a contact portion 158, a connection electrode penetrating through an opening formed in the interlayer insulating film 156 and the gate insulating film 154 therebelow. On the other hand, the first electrode plate 114 a is connected to the ground line 115. Accordingly, the capacitor 114 suppresses a transient phenomenon of the drive current supplied from the power supply line 103 to the pixel electrode 107.

As described above, according to the first embodiment, the capacitor in which the second electrode plate 114 b is connected to the power supply line 103 and the first electrode plate 114 a is connected to the ground line 115 below the organic EL element 300. By providing 114, the transient phenomenon of the current supplied to the organic EL element 300 can be suppressed, and the emission intensity of the organic EL element can be stabilized.
In addition, since the first electrode plate 114a also serves as a reflection plate, it is not necessary to use the pixel electrode 107 as a metal, and the light emission efficiency can be increased.
Further, the first electrode plate 114a is formed in the same layer as the gate electrode 155 of the TFT section 200, and the second electrode plate 114b is formed in the same layer as the silicon layer 153, so that the capacitor 114 is formed. Therefore, it is not necessary to provide a new manufacturing process, and the gate electrode 155 and the silicon layer 153 can be formed simultaneously.

In addition, the microcavity effect can be used by adjusting the distance between the light emitting functional layer 110 and the first electrode plate 114a.
For example, when the organic EL elements 300 that emit red (R), green (G), and blue (B) light are arranged, each light emitted from the light emitting functional layer 110 is transmitted to the counter electrode 108. The phase shift that occurs when the light is reflected by the first electrode plate 114a (reflecting plate) is Φ _R , Φ _G , Φ _B , and the counter electrode 108 and the first electrode plate 114a in the organic EL element 300 that emits light of each color. Optical distances L _R , L _G , L _B , and peak wavelengths of light extracted from the counter electrode 108 side are λ _R , λ _G , λ _B , the optical distances L _R , L _G , L _B Is set to satisfy equation (1).
_{2L R / λ R + Φ R} / 2π = 2L G / λ G + Φ G / 2π = 2L B / λ B + Φ B / 2π
= Q + 1 (1)
(Q is a positive integer including 0.)
By utilizing the microcavity effect, the light emitted from the light emitting functional layer 110 can resonate between the counter electrode 108 and the first electrode plate 114a, and the intensity of the light extracted outside can be increased.

Embodiment 2. FIG.
FIG. 4 is a plan view showing the configuration of the pixel portion A of the organic EL device 100 according to the second embodiment. FIG. 5 is a cross-sectional view taken along line BB ′ of FIG.

  In the second embodiment, a capacitor 114 having one electrode plate connected to the power supply line 103 and the other electrode plate connected to the ground line 115 is provided below the organic EL element 300. The capacitor 114 is connected to the organic EL element. The point of suppressing the transient phenomenon of the supplied current is the same as in the first embodiment.

Similarly to the first embodiment, the pixel electrode 107 is a transparent electrode, and the first electrode plate 114a of the capacitor 114 is a reflection plate.
However, in the second embodiment, unlike the first embodiment, the capacitor 114 has the first electrode plate 114 a formed in the same layer as the source electrode 157. The first electrode plate 114 a is formed of the same material as the source electrode 157 and can be formed at the same time as the source electrode 157 is formed. The second electrode plate 114b of the capacitor 114 is formed of the same material in the same layer as the gate electrode 155, and can be formed at the same time as the gate electrode 155 is formed.
The first electrode plate 114 a is connected to the power supply line 103, and the second electrode plate 114 b is connected to the ground line 115. Thereby, the capacitor 114 suppresses the transient phenomenon of the drive current supplied from the power supply line 103 to the pixel electrode 107.

As described above, according to the second embodiment, the capacitor in which the first electrode plate 114 a is connected to the power supply line 103 and the second electrode plate 114 b is connected to the ground line 115 below the organic EL element 300. By providing 114, the transient phenomenon of the current supplied to the organic EL element 300 can be suppressed, and the emission intensity of the organic EL element can be stabilized.
In addition, since the first electrode plate 114a also serves as a reflection plate, it is not necessary to use the pixel electrode 107 as a metal, and the light emission efficiency can be increased.
Further, the first electrode plate 114a is formed in the same layer as the source electrode 157 of the TFT section 200, and the second electrode plate 114b is formed in the same layer as the gate electrode 155, so that the capacitor 114 is formed. Therefore, it is not necessary to provide a new manufacturing process, and the source electrode 157 and the gate electrode 155 can be formed at the same time.

  As in the first embodiment, the microcavity effect can be used by adjusting the distance between the light emitting functional layer 110 and the first electrode plate 114a.

Embodiment 3 FIG.
FIG. 6 is a plan view showing the configuration of the pixel portion A of the organic EL device 100 according to the third embodiment. FIG. 7 is a cross-sectional view taken along line BB ′ of FIG.

  In the third embodiment, a capacitor 114 having one electrode plate connected to the power supply line 103 and the other electrode plate connected to the ground line 115 is provided below the organic EL element 300. The capacitor 114 is connected to the organic EL element. The point of suppressing the transient phenomenon of the supplied current is the same as in the first and second embodiments.

Similarly to the first and second embodiments, the pixel electrode 107 is a transparent electrode, and the first electrode plate 114a of the capacitor 114 is a reflection plate.
However, in the third embodiment, unlike the first or second embodiment, the capacitor 114 has the first electrode plate 114a formed in the same layer as the source electrode 157. The first electrode plate 114 a is formed of the same material as the source electrode 157 and can be formed at the same time as the source electrode 157 is formed. The second electrode plate 114b of the capacitor 114 is formed of the same material in the same layer as the gate electrode 155, and can be formed at the same time as the gate electrode 155 is formed.
The first electrode plate 114 a is connected to the power supply line 103, and the second electrode plate 114 b is connected to the ground line 115. Thereby, the capacitor 114 suppresses the transient phenomenon of the drive current supplied from the power supply line 103 to the pixel electrode 107.

As described above, according to the third embodiment, the capacitor in which the first electrode plate 114 a is connected to the power supply line 103 and the second electrode plate 114 b is connected to the ground line 115 below the organic EL element 300. By providing 114, the transient phenomenon of the current supplied to the organic EL element 300 can be suppressed, and the emission intensity of the organic EL element can be stabilized.
In addition, since the first electrode plate 114a also serves as a reflection plate, it is not necessary to use the pixel electrode 107 as a metal, and the light emission efficiency can be increased.
Further, the first electrode plate 114a is formed in the same layer as the source electrode 157 of the TFT section 200, and the second electrode plate 114b is formed in the same layer as the gate electrode 155, so that the capacitor 114 is formed. Therefore, it is not necessary to provide a new manufacturing process, and the source electrode 157 and the gate electrode 155 can be formed at the same time.

  As in the first embodiment, the microcavity effect can be used by adjusting the distance between the light emitting functional layer 110 and the first electrode plate 114a.

Embodiment 4 FIG.
In the first, second, and third embodiments, the circuit configuration of the organic EL device 100 includes two transistors, one potential holding capacitor 111, and a transient current absorbing capacitor 114 as shown in FIG. However, the configuration of the pixel circuit is not limited to that shown in FIG. 1, and may be a circuit having a configuration as shown in FIGS. 8 to 10 show a circuit for one pixel.
The pixel circuit shown in FIG. 8 includes an erasing transistor 116 in addition to the switching transistor 112, the driving transistor 113, the organic EL element 300, the capacitor 111, and the capacitor 114. The erasing transistor 116 has a gate connected to the reset line 117, a source connected to the drain of the switching transistor 112, and a drain connected to the ground line 115.

  The operation of the pixel circuit shown in FIG. 8 is as follows. During the period when the scanning signal is supplied via the scanning line 101 and the switching transistor 112 is selected, the data signal is written to the gate of the driving transistor 113 via the signal line 102. A current corresponding to the magnitude of the data signal is supplied from the power supply line 103 to the organic EL element 300 through the source-drain path of the driving transistor 113. Thereby, the organic EL element 300 emits light with a luminance corresponding to the magnitude of the data signal. In addition, during a period in which the reset signal is supplied through the reset line 117 and the erasing transistor 116 is selected, the potential between the source and the drain of the driving transistor 113 becomes 0 volts, and the driving transistor 113 is turned off. It becomes. Thereby, no current is supplied to the organic EL element 300, and the organic EL element 300 enters a non-light emitting state.

Further, the pixel circuit shown in FIG. 9 includes three switching transistors Sw-TFTs 1, 2, and 3, a driving transistor Dr-TFT, an organic EL element 300, capacitors C1 and C2, and a capacitor 114.
The pixel circuit shown in FIG. 9 is a voltage-programmed pixel circuit. The operation of this pixel circuit will be described. First, a signal is input to the Select line while the voltage of the data line Data is 0 volts, and the Sw-TFT 1 is turned on. Next, a signal is input to the AZ line, and the Sw-TFT 3 is also turned on. Further, a signal is input to the AZB line and the Sw-TFT 2 is turned on. As a result, the gate voltage of the driving transistor Dr-TFT is charged. At this time, the gate voltage VG of the Dr-TFT is charged to a potential higher than the light emission threshold voltage Vth of the organic EL. Next, the signal of the AZB line is turned off, the Sw-TFT 2 is turned off, and discharging is performed until the gate voltage VG of the Dr-TFT becomes the light emission threshold voltage Vth. Next, the signal of the AZ line is turned off and the Sw-TFT 3 is turned off. Next, the data signal Vdata is input from the data line Data, and the gate voltage VG of the Dr-TFT becomes Vth + Vdata. Next, the signal of the Select line and the data signal Vdata are turned off, and the signal is input to the AZB line and the Sw-TFT 2 is turned on, whereby a current flows through the organic EL element 300 by the gate voltage VG and light is emitted.

The pixel circuit shown in FIG. 10 includes three switching transistors Sw-TFTs 1, 2, and 3, a driving transistor Dr-TFT, an organic EL element 300, capacitors C1 and C2, and a capacitor 114. VGP is a variable current source.
The pixel circuit shown in FIG. 10 is a current programming pixel circuit. The operation of this pixel circuit will be described. First, a signal is input to the Select 1 line, and the Sw-TFTs 1 and 2 are turned on. When the Sw-TFT 1 is turned on, the gate voltage VG of the Dr-TFT increases. When VG becomes a certain value or more, the Dr-TFT is turned on and a current flows between the drain and the source. Here, since a constant current is programmed to flow through VGP, the amount of current flowing from Dr-TFT to VGP is determined by the amount of current programmed into VGP. Therefore, the gate voltage VG of the Dr-TFT is also determined by this amount of current. Next, when the signal on the Select 1 line is turned off and the signal on the Select 2 line is turned on, the Sw-TFT 3 is turned on. At this time, a current flows through the organic EL element 300 according to the programmed gate voltage VG of the Dr-TFT, and light is emitted.

Whichever circuit is used, the same effect as when the pixel circuit shown in FIG. 1 is used can be obtained. In addition to the pixel circuits described above, various voltage program type or current program type pixel circuits can be used.
The voltage programming method and the current programming method are methods for supplying data to pixels using organic EL elements. In the voltage programming method, the data signal is supplied to the data line on a voltage basis, and in the current programming method, the data line is supplied. The data signal is supplied on the basis of current.

Electronic Device Next, a specific example of an electronic device including the organic EL device 100 described above will be described.
FIG. 11 is a perspective view showing a specific example of an electronic apparatus provided with the organic EL device 100. FIG. 11A is a perspective view illustrating a mobile phone which is an example of an electronic device. The cellular phone 1000 includes a display unit 1001 configured using the organic EL device 100 according to the present invention. FIG. 11B is a perspective view illustrating a wrist watch that is an example of an electronic apparatus. The wristwatch 1100 includes a display unit 1101 configured using the organic EL device 100 according to the present invention. FIG. 11C is a perspective view illustrating a portable information processing device 1200 which is an example of an electronic device. This portable information processing apparatus 1200 includes an input unit 1201 such as a keyboard, a main body unit 1202 in which a calculation unit, a storage unit, and the like are stored, and a display unit 1203 configured using the organic EL device 100 according to the present invention. ing.

FIG. 1 is a diagram showing a circuit configuration of an organic EL device which is an example of an electro-optical device according to the present invention. FIG. 2 is a plan view showing the configuration of the pixel portion of the organic EL device according to the first embodiment. FIG. 3 is a cross-sectional view taken along line B-B ′ of FIG. 2. FIG. 4 is a plan view showing the configuration of the pixel portion of the organic EL device according to the second embodiment. FIG. 5 is a cross-sectional view taken along line B-B ′ of FIG. 4. FIG. 6 is a plan view showing the configuration of the pixel portion of the organic EL device according to the third embodiment. FIG. 7 is a sectional view taken along line B-B ′ of FIG. 6. FIG. 8 is a diagram showing another example of the circuit configuration of an organic EL device that is an example of an electro-optical device according to the present invention. FIG. 9 is a diagram showing another example of the circuit configuration of an organic EL device that is an example of an electro-optical device according to the present invention. FIG. 10 is a diagram illustrating another example of the circuit configuration of the organic EL device which is an example of the electro-optical device according to the present invention. It is the figure which showed the example of the electronic device by this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 100 Organic EL device, 101 Scan line, 102 Signal line, 103 Power supply line, 104 Data line drive circuit, 105 Scan line drive circuit, 107 Pixel electrode, 108 Counter electrode, 110 Light emitting functional layer, 111 Capacitor, 112 Switching transistor, 113 Driving transistor, 114 capacitor, 114a first electrode plate, 114b second electrode plate, 115 ground line, 116 erasing transistor, 117 reset line, 151 glass substrate, 152 insulating layer, 153 silicon layer, 153S source region, 153D drain region, 153C channel region, 154 gate insulating film, 155 gate electrode, 156 interlayer insulating film, 157 source electrode, 158, 159 contact portion, 160, 161 insulating layer, 162 photosensitive acrylic layer, 16 Transparent sealing layer, 200 TFT portion, 300 the organic EL device

Claims (15)

A light emitting element including a pixel electrode, a counter electrode facing the pixel electrode, and a light emitting functional layer sandwiched between the pixel electrode and the counter electrode;
A drive circuit including at least one transistor and driving the light emitting element;
One of the two electrode plates is connected to a power supply line, and the other includes a transient current absorbing capacitor connected to the ground line,
The transient current absorbing capacitor is provided in a lower layer of the light emitting functional layer,
The electro-optical device, wherein a first electrode plate close to the light emitting functional layer of the two electrode plates also serves as a reflecting plate that reflects light emitted from the light emitting functional layer. A plurality of scanning lines, a plurality of signal lines arranged orthogonal to the scanning lines, a plurality of power supply lines, and a plurality of pixel portions provided in the vicinity of intersections of the scanning lines and the signal lines,
The pixel portion is
A selection transistor to which a scanning signal is supplied to a gate via the scanning line;
A driving transistor in which a pixel signal supplied from the signal line via the selection transistor is supplied to a gate;
A pixel electrode through which a driving current flows from the power supply line when electrically connected to the power supply line via the driving transistor;
A counter electrode facing the pixel electrode;
A light emitting functional layer sandwiched between the pixel electrode and the counter electrode;
One of the two electrode plates is connected to the power supply line, and the other includes a transient current absorbing capacitor connected to the ground line,
The transient current absorbing capacitor is provided in a lower layer of the light emitting functional layer,
The electro-optical device, wherein a first electrode plate close to the light emitting functional layer of the two electrode plates also serves as a reflecting plate that reflects light emitted from the light emitting functional layer. A holding capacitor for holding a pixel signal supplied from the signal line via the selection transistor;
The electro-optical device according to claim 2, wherein the pixel signal held by the holding capacitor is supplied to a gate of the driving transistor.   4. The electro-optical device according to claim 3, further comprising an erasing transistor having a gate connected to the reset line, a source connected to the drain of the selection transistor, and a drain connected to the ground line.   The electro-optical device according to claim 3, wherein the pixel unit includes two transistors for compensating a gate voltage of the driving transistor. The driving circuit includes four transistors and one capacitor.
Has a constant current source outside,
2. The electro-optical device according to claim 1, wherein a gate voltage of a driving transistor that controls a current flowing through the light emitting element is determined by a current amount set in the constant current source. The first electrode plate is formed in the same layer as the gate electrode of the transistor,
7. The electro-optical device according to claim 1, wherein the second electrode plate facing the first electrode plate is formed in the same layer as the semiconductor layer of the transistor. . The first electrode plate is formed in the same layer as the source electrode of the driving transistor,
7. The electricity according to claim 1, wherein the second electrode plate facing the first electrode plate is formed in the same layer as the gate electrode of the driving transistor. Optical device. The first electrode plate is formed in the same layer as the source electrode of the driving transistor,
7. The electricity according to claim 1, wherein the second electrode plate facing the first electrode plate is formed in the same layer as the semiconductor layer of the driving transistor. Optical device.   The electro-optic according to any one of claims 1 to 9, wherein a distance between the light emitting functional layer and the reflector is adjusted so that a microcavity effect of the light is generated. apparatus.   An electronic apparatus comprising the electro-optical device according to claim 1. A light emitting element including a pixel electrode, a counter electrode facing the pixel electrode, and a light emitting functional layer sandwiched between the pixel electrode and the counter electrode;
A method of manufacturing an electro-optical device including at least one transistor and including a drive circuit for driving the light emitting element,
In the step of forming the transistor, one of the two electrode plates is connected to a power supply line and the other is connected to a ground line at a position below the light emitting functional layer, and the two electrode plates out of the two electrode plates A method of manufacturing an electro-optical device, wherein the first electrode plate close to the light emitting functional layer simultaneously forms a transient current absorbing capacitor that also serves as a reflecting plate that reflects light emitted from the light emitting functional layer. Forming the first electrode plate at a position below the light emitting functional layer in the same layer as the gate electrode of the transistor;
13. The method according to claim 12, further comprising forming a second electrode plate facing the first electrode plate at a position below the light emitting functional layer in the same layer as the semiconductor layer of the transistor. Manufacturing method of the electro-optical device. Forming the first electrode plate at a position below the light emitting functional layer in the same layer as the source electrode of the transistor;
13. The method according to claim 12, further comprising forming a second electrode plate facing the first electrode plate at a position below the light emitting functional layer in the same layer as the gate electrode of the transistor. Manufacturing method of the electro-optical device. Forming the first electrode plate at a position below the light emitting functional layer in the same layer as the source electrode of the transistor;
13. The method according to claim 12, further comprising forming a second electrode plate facing the first electrode plate at a position below the light emitting functional layer in the same layer as the semiconductor layer of the transistor. Manufacturing method of the electro-optical device.

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