JP2007286843A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2007286843A
JP2007286843A JP2006112737A JP2006112737A JP2007286843A JP 2007286843 A JP2007286843 A JP 2007286843A JP 2006112737 A JP2006112737 A JP 2006112737A JP 2006112737 A JP2006112737 A JP 2006112737A JP 2007286843 A JP2007286843 A JP 2007286843A
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JP
Japan
Prior art keywords
antenna
semiconductor device
seal ring
semiconductor
semiconductor chip
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Pending
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JP2006112737A
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Japanese (ja)
Inventor
Kazumi Hara
和巳 原
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Ricoh Co Ltd
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Ricoh Co Ltd
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Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2006112737A priority Critical patent/JP2007286843A/en
Publication of JP2007286843A publication Critical patent/JP2007286843A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can be miniaturized while integrating an antenna. <P>SOLUTION: The semiconductor device 1 comprises a semiconductor chip 11 formed with a semiconductor circuit 12. A seal ring 13 is provided on the outer periphery of the semiconductor chip 11 for the purpose of preventing passivation cracks during dicing. The seal ring 13 is normally connected to a silicon substrate by a contact hole and is shaped to be stacked on the same layer as a metal layer formed in the semiconductor circuit 12. A communication antenna 14 is installed in the seal ring 13. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体チップの外周にシールリングを設けた半導体装置に関する。   The present invention relates to a semiconductor device in which a seal ring is provided on the outer periphery of a semiconductor chip.

従来ＲＦＩＤなどで用いられている通信用のアンテナは、特許文献１に示されるように、モジュールとして半導体装置とは別に構成されることが多かった。
特開２００４−３６２６０２公報 Conventionally, a communication antenna used in an RFID or the like is often configured separately from a semiconductor device as a module, as disclosed in Patent Document 1.
JP 2004-362602 A

通信用のアンテナを一体化した半導体装置が要求されているが、従来は、半導体チップに対して比較的大きな面積を必要とするアンテナを半導体チップと一体化することはできなかった。そのため、半導体チップが大きくなり小型化の妨げとなっていた。
本発明は、アンテナを一体化しつつ、小型化を図ることができる半導体装置を提供することを目的とする。 A semiconductor device in which a communication antenna is integrated is required, but conventionally, an antenna that requires a relatively large area relative to a semiconductor chip cannot be integrated with the semiconductor chip. For this reason, the semiconductor chip has become large and hinders downsizing.
An object of this invention is to provide the semiconductor device which can achieve size reduction, integrating an antenna.

上記目的を達成するために、請求項１記載の発明は、半導体チップの外周にシールリングを設けた半導体装置において、通信用のアンテナを前記シールリング中に設置することを特徴とする。
請求項２記載の発明は、請求項１記載の半導体装置において、前記アンテナは、半導体チップの垂直方向に指向性を有することを特徴とする。
請求項３記載の発明は、請求項１又は２記載の半導体装置において、前記アンテナの設置部分の下方を、内部の半導体回路と電気的に分離することを特徴とする。 In order to achieve the above object, the invention according to claim 1 is a semiconductor device in which a seal ring is provided on the outer periphery of a semiconductor chip, wherein a communication antenna is installed in the seal ring.
According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the antenna has directivity in a direction perpendicular to the semiconductor chip.
According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the lower portion of the antenna installation portion is electrically separated from an internal semiconductor circuit.

本発明は、半導体チップの外周にシールリングを設けた半導体装置において、通信用のアンテナをシールリング中に設置するようにしたので、アンテナを一体化しつつ、小型化を図ることができる   According to the present invention, in the semiconductor device in which the seal ring is provided on the outer periphery of the semiconductor chip, the antenna for communication is installed in the seal ring, so that the antenna can be integrated and miniaturized.

以下、本発明の実施の形態を図面に従って説明する。
図１は本発明の実施の形態に係る半導体装置の平面図である。本半導体装置１は、半導体チップ１１に半導体回路１２が形成され、半導体チップ１１の外周部には、ダイシング時のパッシベーションクラック防止などを目的として、シールリング１３が設けられる。
このシールリング１３は、通常、シリコン基板に対し、コンタクトホールで接続し、更には半導体回路１２に構成されるメタル層と同層に積み上げられた形状をなしている。本発明では、シールリング１３中に通信用のアンテナ１４が設置されている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention. In the semiconductor device 1, a semiconductor circuit 12 is formed on a semiconductor chip 11, and a seal ring 13 is provided on the outer periphery of the semiconductor chip 11 for the purpose of preventing passivation cracks during dicing.
The seal ring 13 is usually connected to a silicon substrate through a contact hole, and is further stacked in the same layer as the metal layer formed in the semiconductor circuit 12. In the present invention, a communication antenna 14 is installed in the seal ring 13.

図２は図１のＡ−Ａ断面における第１の実施形態を示す構成図である。第１の実施形態では、３層構造の２重のシールリング１３、１３の間にアンテナ１４として作用させる配線層を形成している。この断面図では、アンテナ部分は単線で引き回されているが、利用される波長に応じて、折り返し形状やループ形状であってもよい。   FIG. 2 is a block diagram showing the first embodiment in the AA cross section of FIG. In the first embodiment, a wiring layer that functions as the antenna 14 is formed between the double seal rings 13 and 13 having a three-layer structure. In this cross-sectional view, the antenna portion is drawn with a single wire, but may be a folded shape or a loop shape depending on the wavelength used.

図３は図１のＡ−Ａ断面における第２の実施形態を示す構成図である。第２の実施形態では、メタル層数に応じた形で適宜、導波器、反射器の役目をするフローティングなアンテナ１４を形成し、給電部分のアンテナ長と異なる長さで半導体チップ１１表面から垂直方向に指向性を持たせるように構成する。
このような構成とすることで、図２に示したダイポール形状のアンテナ構造に比べ、半導体チップ１１表面の垂直方向において電波の利得が向上する。 FIG. 3 is a block diagram showing a second embodiment taken along the line AA of FIG. In the second embodiment, a floating antenna 14 serving as a director and a reflector is appropriately formed in a form corresponding to the number of metal layers, and the surface of the semiconductor chip 11 has a length different from the antenna length of the feeding portion. It is configured to have directivity in the vertical direction.
With such a configuration, the gain of the radio wave is improved in the direction perpendicular to the surface of the semiconductor chip 11 as compared to the dipole antenna structure shown in FIG.

図４は図１のＡ−Ａ断面における第３の実施形態を示す構成図である。第３の実施形態では、図２の第１の実施形態の構造の半導体チップ１１に、半導体回路部分とアンテナ１４との干渉を無くすため、完全分離されたウェル１６が設置されている。これにより、半導体回路１２とアンテナ１４相互干渉が低減でき、ノイズの削減、ひいては利得の向上に寄与する。   FIG. 4 is a block diagram showing a third embodiment in the AA cross section of FIG. In the third embodiment, a well 16 that is completely separated is installed in the semiconductor chip 11 having the structure of the first embodiment shown in FIG. 2 in order to eliminate interference between the semiconductor circuit portion and the antenna 14. As a result, the mutual interference between the semiconductor circuit 12 and the antenna 14 can be reduced, which contributes to noise reduction and thus gain improvement.

本発明の実施の形態に係る半導体装置の平面図である。1 is a plan view of a semiconductor device according to an embodiment of the present invention. 図１のＡ−Ａ断面における第１の実施形態を示す構成図である。It is a block diagram which shows 1st Embodiment in the AA cross section of FIG. 図１のＡ−Ａ断面における第２の実施形態を示す構成図である。It is a block diagram which shows 2nd Embodiment in the AA cross section of FIG. 図１のＡ−Ａ断面における第３の実施形態を示す構成図である。It is a block diagram which shows 3rd Embodiment in the AA cross section of FIG.

符号の説明Explanation of symbols

１ 半導体装置
１１ 半導体チップ
１２ 半導体回路
１３ シールリング
１４ アンテナ


DESCRIPTION OF SYMBOLS 1 Semiconductor device 11 Semiconductor chip 12 Semiconductor circuit 13 Seal ring 14 Antenna


Claims (3)

半導体チップの外周にシールリングを設けた半導体装置において、通信用のアンテナを前記シールリング中に設置することを特徴とする半導体装置。   A semiconductor device in which a seal ring is provided on an outer periphery of a semiconductor chip, wherein a communication antenna is installed in the seal ring. 請求項１記載の半導体装置において、前記アンテナは、半導体チップの垂直方向に指向性を有することを特徴とする半導体装置。   2. The semiconductor device according to claim 1, wherein the antenna has directivity in a direction perpendicular to the semiconductor chip. 請求項１又は２記載の半導体装置において、前記アンテナの設置部分の下方を、内部の半導体回路と電気的に分離することを特徴とする半導体装置。



3. The semiconductor device according to claim 1, wherein a portion below the antenna installation portion is electrically separated from an internal semiconductor circuit.



JP2006112737A 2006-04-14 2006-04-14 Semiconductor device Pending JP2007286843A (en)

Priority Applications (1)

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JP2006112737A JP2007286843A (en) 2006-04-14 2006-04-14 Semiconductor device

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JP2006112737A JP2007286843A (en) 2006-04-14 2006-04-14 Semiconductor device

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509653A (en) * 2008-11-25 2012-04-19 クアルコム，インコーポレイテッド Antenna integrated on a semiconductor chip
JP2014086593A (en) * 2012-10-24 2014-05-12 Renesas Electronics Corp Semiconductor device
NL1040186C2 (en) * 2013-04-26 2014-10-29 Omniradar B V On-silicon integrated antenna with horn-like extension.
NL1040185C2 (en) * 2013-04-26 2014-10-29 Omniradar B V Horn-like extension for integrated antenna.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509653A (en) * 2008-11-25 2012-04-19 クアルコム，インコーポレイテッド Antenna integrated on a semiconductor chip
JP2014086593A (en) * 2012-10-24 2014-05-12 Renesas Electronics Corp Semiconductor device
NL1040186C2 (en) * 2013-04-26 2014-10-29 Omniradar B V On-silicon integrated antenna with horn-like extension.
NL1040185C2 (en) * 2013-04-26 2014-10-29 Omniradar B V Horn-like extension for integrated antenna.
WO2014175741A1 (en) * 2013-04-26 2014-10-30 Omniradar Bv Horn-like extension for integrated antenna
US9979091B2 (en) 2013-04-26 2018-05-22 Omniradar Bv Horn-like extension for integrated antenna

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