JP2007280372A5 - - Google Patents

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Publication number
JP2007280372A5
JP2007280372A5 JP2007064377A JP2007064377A JP2007280372A5 JP 2007280372 A5 JP2007280372 A5 JP 2007280372A5 JP 2007064377 A JP2007064377 A JP 2007064377A JP 2007064377 A JP2007064377 A JP 2007064377A JP 2007280372 A5 JP2007280372 A5 JP 2007280372A5
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JP
Japan
Prior art keywords
circuit
antenna
signal processing
signal
processing circuit
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JP2007064377A
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Japanese (ja)
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JP2007280372A (en
JP5469799B2 (en
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Publication date
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Priority to JP2007064377A priority Critical patent/JP5469799B2/en
Priority claimed from JP2007064377A external-priority patent/JP5469799B2/en
Publication of JP2007280372A publication Critical patent/JP2007280372A/en
Publication of JP2007280372A5 publication Critical patent/JP2007280372A5/ja
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Publication of JP5469799B2 publication Critical patent/JP5469799B2/en
Expired - Fee Related legal-status Critical Current
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Claims (8)

信号処理回路と、
前記信号処理回路に接続された第１のアンテナ回路と、
前記信号処理回路に接続された第２のアンテナ回路と、
前記信号処理回路に接続されたバッテリーと、
ブースターアンテナと、を有し、
前記第１のアンテナ回路は、前記ブースターアンテナを介して前記信号処理回路に記憶されたデータを送信するための信号をリーダ／ライタから受信する回路であり、
前記第２のアンテナ回路は、前記バッテリーに充電するための信号を外部の無線信号から受信する回路であり、
前記第１のアンテナ回路が受信する信号の波長と前記第２のアンテナ回路が受信する信号の波長は異なることを特徴とする半導体装置。 A signal processing circuit;
A first antenna circuit connected to the signal processing circuit ;
A second antenna circuit connected to the signal processing circuit ;
A battery connected to the signal processing circuit;
Includes a booster antenna, a,
The first antenna circuit is a circuit that receives a signal for transmitting data stored in the signal processing circuit from the reader / writer via the booster antenna,
The second antenna circuit is a circuit that receives a signal for charging the battery from an external radio signal;
A semiconductor device, wherein a wavelength of a signal received by the first antenna circuit is different from a wavelength of a signal received by the second antenna circuit. 信号処理回路と、
前記信号処理回路に接続された第１のアンテナ回路と、
複数の第２のアンテナ回路と、
前記信号処理回路に接続されたバッテリーと、
ブースターアンテナと、を有し、
前記第１のアンテナ回路は、前記信号処理回路に記憶されたデータを送信するための信号をリーダ／ライタから受信する回路であり、
前記第２のアンテナ回路は、前記ブースターアンテナを介して前記バッテリーに充電するための信号を外部の無線信号から受信する回路であり、
前記第１のアンテナ回路が受信する信号の波長と前記第２のアンテナ回路が受信する信号の波長は異なることを特徴とする半導体装置。 A signal processing circuit;
A first antenna circuit connected to the signal processing circuit;
A plurality of second antenna circuits;
A battery connected to the signal processing circuit;
Includes a booster antenna, a,
The first antenna circuit is a circuit that receives a signal for transmitting data stored in the signal processing circuit from a reader / writer,
The second antenna circuit is a circuit that receives a signal for charging the battery from an external radio signal via the booster antenna,
A semiconductor device, wherein a wavelength of a signal received by the first antenna circuit is different from a wavelength of a signal received by the second antenna circuit. 請求項１または請求項２において、
前記バッテリーは、前記信号処理回路が有する電源回路に電力を供給することを特徴とする半導体装置。 In claim 1 or claim 2 ,
The battery device supplies power to a power supply circuit included in the signal processing circuit. 請求項１乃至請求項３のいずれか一項において、In any one of Claims 1 thru | or 3,
前記信号処理回路は、第１の信号処理回路及び第２の信号処理回路を有し、The signal processing circuit includes a first signal processing circuit and a second signal processing circuit,
前記第１のアンテナ回路は、前記第１の信号処理回路に接続され、The first antenna circuit is connected to the first signal processing circuit;
前記第２のアンテナ回路は、前記第２の信号処理回路に接続されていることを特徴とする半導体装置。The semiconductor device, wherein the second antenna circuit is connected to the second signal processing circuit. 請求項１乃至請求項４のいずれか一項において、
前記第１のアンテナ回路及び前記第２のアンテナ回路のいずれか一は、電磁誘導方式により信号を受信することを特徴とする半導体装置。 In any one of Claims 1 thru | or 4 ,
Any one of the first antenna circuit and the second antenna circuit receives a signal by an electromagnetic induction method. 請求項１乃至請求項５のいずれか一項において、
前記第２のアンテナ回路は、それぞれ異なる波長を受信する複数のアンテナ回路であることを特徴とする半導体装置。 In any one of Claims 1 thru | or 5 ,
The semiconductor device, wherein the second antenna circuit is a plurality of antenna circuits that receive different wavelengths. 請求項１乃至請求項６のいずれか一項において、
前記バッテリーは、リチウムイオン電池、ニッケル水素電池、ニカド電池、有機ラジカル電池又はコンデンサであることを特徴とする半導体装置。 In any one of Claims 1 thru | or 6 ,
The semiconductor device, wherein the battery is a lithium ion battery, a nickel metal hydride battery, a nickel-cadmium battery, an organic radical battery, or a capacitor. 請求項１乃至請求項７のいずれか一項に記載の半導体装置を備えたことを特徴とするＩＤラベル、ＩＤタグ、ＩＤカード。 An ID label, an ID tag, and an ID card comprising the semiconductor device according to any one of claims 1 to 7 .
JP2007064377A 2006-03-15 2007-03-14 Semiconductor device that communicates data by wireless communication Expired - Fee Related JP5469799B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007064377A JP5469799B2 (en) 2006-03-15 2007-03-14 Semiconductor device that communicates data by wireless communication

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006070387 2006-03-15
JP2006070387 2006-03-15
JP2007064377A JP5469799B2 (en) 2006-03-15 2007-03-14 Semiconductor device that communicates data by wireless communication

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012117612A Division JP5315438B2 (en) 2006-03-15 2012-05-23 Method for manufacturing semiconductor device
JP2013237582A Division JP2014078725A (en) 2006-03-15 2013-11-18 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2007280372A JP2007280372A (en) 2007-10-25
JP2007280372A5 true JP2007280372A5 (en) 2010-03-04
JP5469799B2 JP5469799B2 (en) 2014-04-16

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Family Applications (1)

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JP2007064377A Expired - Fee Related JP5469799B2 (en) 2006-03-15 2007-03-14 Semiconductor device that communicates data by wireless communication

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JP (1) JP5469799B2 (en)

Families Citing this family (12)

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US9130602B2 (en) 2006-01-18 2015-09-08 Qualcomm Incorporated Method and apparatus for delivering energy to an electrical or electronic device via a wireless link
US9774086B2 (en) 2007-03-02 2017-09-26 Qualcomm Incorporated Wireless power apparatus and methods
US9124120B2 (en) 2007-06-11 2015-09-01 Qualcomm Incorporated Wireless power system and proximity effects
JP5181759B2 (en) 2008-03-21 2013-04-10 ソニー株式会社 IC card
JP4987775B2 (en) * 2008-03-27 2012-07-25 株式会社東芝 Wireless powered terminal, system and method
US20090273242A1 (en) * 2008-05-05 2009-11-05 Nigelpower, Llc Wireless Delivery of power to a Fixed-Geometry power part
JP5415713B2 (en) * 2008-05-23 2014-02-12 株式会社半導体エネルギー研究所 Semiconductor device
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2010263690A (en) * 2009-05-01 2010-11-18 Panasonic Electric Works Co Ltd Transmission system
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101924989B1 (en) * 2011-01-07 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing power storage device
CN108596322B (en) * 2018-06-11 2023-12-15 上海双十信息科技有限公司 Ultrahigh frequency RFID device and method with independent energy supply of labels

Family Cites Families (10)

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JPH11259616A (en) * 1998-03-11 1999-09-24 Hitachi Ltd Ic card and processing method by ic card
JP2003006592A (en) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd Information transmitter-receiver
JP2003070187A (en) * 2001-08-27 2003-03-07 Toshiba Eng Co Ltd Non-contacting data carrier device and method for charging built-in secondary battery
JP4387090B2 (en) * 2002-10-16 2009-12-16 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2004343410A (en) * 2003-05-15 2004-12-02 Hitachi Maxell Ltd Non-contact communication type information carrier
WO2005069204A1 (en) * 2004-01-16 2005-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2006049859A (en) * 2004-06-29 2006-02-16 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
JP2006024087A (en) * 2004-07-09 2006-01-26 Nec Corp Radio device, its manufacturing method, its inspecting method and inspecting device, radio apparatus, and its manufacturing method
JP5041686B2 (en) 2004-07-30 2012-10-03 株式会社半導体エネルギー研究所 Method for peeling thin film integrated circuit and method for manufacturing semiconductor device
JP4749074B2 (en) * 2004-07-30 2011-08-17 株式会社半導体エネルギー研究所 IC chip manufacturing method and apparatus

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