JP2007271999A - Photomask, method for manufacturing the same, and method for manufacturing electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To rapidly and inexpensively provide a photomask with high accuracy in which vertical and horizontal patterns and oblique patterns are present together. <P>SOLUTION: The photomask 50 comprises: a first transparent substrate 1; a second transparent substrate 2 laminated on the first transparent substrate; a first light shielding pattern 3 which is formed on a first face 5 of the first transparent substrate 1 opposing to the second transparent substrate 2 and which is present as extending along the coordinate axes of a first system of rectangular coordinates 7 on the first face 5; and a second light shielding pattern 4 which is formed on a second face 6 of the second transparent substrate 2 opposing to the first transparent substrate 1 and which is present as extending along the coordinate axes of a second system of rectangular coordinates 8 comprising the coordinate axes extending on the second face 6 and making an acute angle with respect to the coordinate axes of the first system of rectangular coordinates 7. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a photomask, a method for manufacturing the same, and a method for manufacturing an electronic device. More particularly, the present invention relates to a photomask in which vertical and horizontal patterns and oblique patterns are mixed, a method for manufacturing the photomask, and a method for manufacturing an electronic device.

  Conventionally, when manufacturing a semiconductor element or the like, a projection exposure apparatus that projects a pattern image of a photomask onto a wafer (or glass plate or the like) coated with a photoresist as a photosensitive substrate via a projection optical system. Is used. Until now, the exposure apparatus has been required to have a large exposure area. This is because if n chips can be exposed at a time, the throughput of the exposure process is improved n times, and the chip cost is finally reduced. Further, in designing a large scale integrated circuit (LSI), a reduction in chip area has been required. This is because the number of products that can be manufactured from one wafer can be increased, so that the chip cost can be reduced. Such a development style is effective for memory products characterized by low-volume and high-volume production. In memory products, the ratio of wafer cost, which is maintenance cost, is overwhelmingly higher than photomask cost, which is the initial investment, so it is more effective for the industry to mass produce at lower wafer cost than photomask. It is.

  However, the situation is different for application specific integrated circuit (ASIC) products, which are characterized by high-mix low-volume production. Since the products are not produced in large quantities, the mass production effect cannot be expected so much. When the lifetime cost structure of an average ASIC product is estimated, the ratio of the initial investment photomask cost to the maintenance cost wafer cost is almost equal. In this way, the photomask cost, which is the initial investment, is a feature of ASIC products that cannot be ignored. Therefore, there is a need for a technique for reducing the photomask cost while maintaining or improving the processing accuracy of the mask process.

  Looking at the cost structure of the mask process, the pattern drawing process and the inspection process account for an overwhelmingly large proportion. This is because the light-shielding film forming process and the resist film coating / developing process can collectively process the photomask, but it is necessary to draw and inspect each fine pattern in the drawing process and the inspection process. Furthermore, with the recent high integration of LSIs, the fine pattern on the photomask has increased exponentially, and this tendency has become more prominent.

  In addition, since the mask drawing apparatus and the mask inspection apparatus are required to have high accuracy, and the price of the apparatus itself is high, the depreciation cost required when using a new apparatus that has not yet been depreciated cannot be ignored.

  The present inventor is configured by, for example, forming a light-shielding pattern on each of two transparent substrates and superimposing the formation surfaces facing each other in order to solve the above technical and business problems. Invented photomasks and the like (see Patent Document 1).

  By the way, the element pattern of an electronic device such as a semiconductor element has been mainly composed of vertical and horizontal thin lines and rectangles. However, in recent years, a technique related to X-Architecture, which is a design using many diagonal wirings, has also been disclosed ( Patent Document 2). In this technology, there are advantages such as reducing the area of the LSI and improving the operation speed associated with the decrease in electric resistance by using the oblique pattern for the LSI.

Therefore, a photomask manufacturing technique that can be used when forming oblique wiring is required. This is a method of accurately drawing light-shielding patterns extending in an oblique direction. For example, when raster-type electron beam drawing is used, each grid is drawn in a square grid consisting of sides along orthogonal axes in the vertical and horizontal directions. Whether or not to do so can be approximated by on / off control, and the accuracy can be further improved by adjusting the amount of electron beam irradiation (see Patent Document 3).
JP 2005-3949 A JP 2001-142931 A JP 2001-318455 A (page 16, FIG. 14)

  However, the technique of Patent Document 1 does not solve a specific problem caused by mixing vertical and horizontal patterns and diagonal patterns. This point will be described in detail below.

  In general, both vertical and horizontal patterns and diagonal patterns are drawn and inspected by the same apparatus. For this reason, even if a mask manufacturing method is used in which a light-shielding pattern is formed on each of two transparent substrates as in Patent Document 1 and the formation surfaces are opposed to each other, a single transparent substrate is used. In the case where the vertical and horizontal patterns and the diagonal pattern are mixed in the light-shielding pattern formed in this way, there is no difference in that both patterns are drawn and inspected by the same apparatus. Therefore, the vertical and horizontal patterns and the diagonal patterns cannot be drawn or inspected simultaneously.

  In addition, when an oblique pattern is drawn, a figure including an oblique line is first divided into strips of the minimum grid of the mask drawing apparatus, and each of them is drawn. As a result of creating a large number of strip data in this way, the drawing file may become enormous and may exceed the capacity of the disc. Further, as described above, since each piece of strip data has to be processed, the drawing time and the inspection time become long. As a result, the delivery time is prolonged and the cost increases with the occupation of the device. Furthermore, the influence of the drift phenomenon of the apparatus is more caused by the longer process time. For example, in pattern drawing and inspection using an electron beam, the charge amount of an insulating part such as a resist increases with time, and the electron trajectory fluctuates unexpectedly during the process. It is. This drift phenomenon causes a decrease in dimensional accuracy in the pattern longitudinal direction.

  In addition, if a defect is found or a pattern change is required for one of the vertical and horizontal patterns and the diagonal pattern after the photomask is manufactured, both patterns must be recreated by the conventional methods. There is also the problem of not becoming.

  Further, the above-described technique (see Patent Document 2) related to X-Architecture has not overcome the difficulty of forming an oblique pattern, which is an important component of the technique.

  In addition, when the oblique pattern is drawn by the above-described drawing method for forming the light shielding pattern extending in the oblique direction (see Patent Document 3), there is a problem that the line width accuracy of the oblique pattern is lowered. . This is because the pattern extending in the diagonal direction is divided and processed in units of grids along the vertical and horizontal directions. Patent Document 3 also discloses that the line width is adjusted by controlling the amount of electron beam irradiation during drawing. However, in that case, the drawing file also includes irradiation amount information, and there has been a problem that the drawing file related to the oblique pattern, which was originally enormous, further increases.

  The present invention has been made to solve the above problems, and in a photomask in which vertical and horizontal patterns and diagonal patterns are mixed, the vertical and horizontal patterns and diagonal patterns can be drawn simultaneously and the drawing file can be reduced. An object of the present invention is to provide a photomask that can easily correct a defect and further improve the line width accuracy of an oblique pattern and a method of manufacturing the photomask.

  Another object of the present invention is to provide a method for manufacturing an electronic device using the photomask.

  The photomask of the present invention includes a first transparent substrate, a second transparent substrate, a first light shielding pattern, and a second light shielding pattern. The second transparent substrate is overlapped with the first transparent substrate. The first light shielding pattern is formed on a surface of the first transparent substrate facing the second transparent substrate, and extends along the coordinate axis of the first orthogonal coordinate system. The second light shielding pattern is formed on a surface of the second transparent substrate facing the first transparent substrate, and includes a coordinate axis extending on the second surface so as to form an acute angle with the coordinate axis of the first orthogonal coordinate system. It extends in the coordinate axis direction of the second orthogonal coordinate system.

  According to the method of manufacturing a photomask of the present invention, the first transparent substrate is formed on the first surface of the first transparent substrate in order to form the first light shielding pattern extending along the coordinate axis direction of the first orthogonal coordinate system. A first drawing step of drawing with the angle state set, and a coordinate axis extending on the second surface so that the second surface of the second transparent substrate forms an acute angle with the coordinate axis of the first orthogonal coordinate system. Second drawing is performed by setting the second transparent substrate to a second angular state rotated from the first angular state in order to form a second light-shielding pattern extending along the coordinate axis direction of the two orthogonal coordinate systems. A drawing step and an overlaying step of superposing the first transparent substrate and the second transparent substrate with the first surface and the second surface facing each other are provided.

  The method of manufacturing an electronic device according to the present invention is characterized in that a pattern is formed using the photomask.

  According to the photomask of the present invention, the first light shielding pattern along the coordinate axis direction of the first orthogonal coordinate system and the second light shielding pattern along the coordinate axis direction of the second orthogonal coordinate system are formed on separate transparent substrates. Has been. For this reason, the first light-shielding pattern and the second light-shielding pattern can be drawn and inspected by separate apparatuses, and can be processed simultaneously.

  In addition, since the first light-shielding pattern and the second light-shielding pattern are formed on separate transparent substrates, the coordinate axes of the first orthogonal coordinate system and the coordinate axes of the second orthogonal coordinate system are drawn when the second light-shielding pattern is drawn. It is possible to draw the second light shielding pattern in a state where the second transparent substrate is rotated with respect to the drawing apparatus by an acute angle formed by Accordingly, the second light-shielding pattern extending in a direction different from the extending direction of the first light-shielding pattern by an acute angle can be drawn in the same manner as when the first light-shielding pattern is drawn. As a result, even when the extending directions of the first light-shielding pattern and the second light-shielding pattern are different, it is not necessary to use drawing data divided into fine strips at the time of drawing, and the time required for drawing and inspection Is reduced. Moreover, since the influence of device drift is reduced by the time reduction, the dimensional accuracy in the longitudinal direction of the pattern is improved. In addition, since the occupation time of the drawing apparatus and the inspection apparatus is shortened, the photomask manufacturing cost is reduced. Furthermore, since it is not necessary to create a large number of strip-shaped data, the data amount of the drawing file is reduced. Further, since the direction of the drawing grid and the pattern extending direction can be matched during drawing, the line width accuracy of the pattern is increased in both the first light shielding pattern and the second light shielding pattern.

  In addition, since the first light shielding pattern along the coordinate axis direction of the first orthogonal coordinate system and the second light shielding pattern along the coordinate axis direction of the second orthogonal coordinate system are formed on separate transparent substrates, When a defect or pattern revision occurs in the pattern, it is possible to recreate and replace only one of the patterns.

  According to the photomask manufacturing method of the present invention, the second orthogonal coordinate system of the obtained photomask is in a state of being rotated by an acute angle with respect to the first orthogonal coordinate system. However, the second light-shielding pattern is drawn while being rotated from the first angle state. Thus, if the second transparent substrate is drawn while being rotated by the acute angle, the coordinate axis direction of the second orthogonal coordinate system for the drawing apparatus can be aligned with the coordinate axis direction of the first orthogonal coordinate system for the drawing apparatus. Therefore, the second light shielding pattern can be drawn in the same manner as the first light shielding pattern. Thereby, it is not necessary to make the second light shielding pattern into strip-shaped data when drawing the second light shielding pattern. Therefore, the data amount of the drawing file can be reduced.

  According to the electronic device manufacturing method of the present invention, even when a pattern along the coordinate axis of the first orthogonal coordinate system and a pattern along the second orthogonal coordinate system coexist, the pattern is low in cost. It is formed with high accuracy and quick delivery. Therefore, an electronic device in which a pattern along the coordinate axis of the first orthogonal coordinate system and a pattern along the coordinate axis of the second orthogonal coordinate system coexist is manufactured at low cost, in a short delivery time, and with high dimensional accuracy.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
FIGS. 1A to 1C are explanatory views for schematically explaining the configuration of the photomask according to the first embodiment of the present invention. In these drawings, FIG. 1A shows a plan view of the first transparent substrate 1, and FIG. 1B shows a plan view of the second transparent substrate 2. FIG. 1C is a plan view showing a pattern arrangement state when the first transparent substrate 1 and the second transparent substrate 2 are overlapped.

  First, as shown in FIG. 1A, a first light shielding pattern 3 is formed on a first surface 5 which is one of main surfaces of a square-shaped first transparent substrate 1, for example. Here, in order to grasp the coordinates on the first surface 5, a first orthogonal coordinate system 7 having orthogonal coordinate axes X1 and Y1 along the side of the planar outer shape of the square first transparent substrate 1 is used. Is introduced. The direction obtained by rotating the X1 axis 90 degrees clockwise in the figure is the Y1 axis. The first light shielding pattern 3 extends along the coordinate axis Y1. Note that the first light-shielding pattern 3 may extend along the coordinate axis X1, and may have a portion along the coordinate axis X1 and a portion along the coordinate axis Y1. The pattern extending along the side of the planar outer shape of the substrate is also referred to as a vertical and horizontal pattern in this specification.

  Further, as shown in FIG. 1B, the second light shielding pattern 4 is formed on the second surface 6 which is one of the main surfaces of the second transparent substrate 2 having a square shape, for example. Here, in order to grasp the coordinates on the second surface 6, a second orthogonal coordinate system 8 having orthogonal coordinate axes X2 and Y2 is introduced. Regarding the orientation of the coordinate axes, in comparison with the first orthogonal coordinate system 7, the coordinate axes X2 and Y2 of the second orthogonal coordinate system 8 are the same as the coordinate axes X1 and Y1 of the first orthogonal coordinate system 7. Has an acute angle. The X2 axis is a direction obtained by rotating the X1 axis clockwise, for example, 45 degrees in the drawing. The Y2 axis is a direction rotated 45 degrees clockwise, for example, with the Y1 axis reversed. The second light shielding pattern 4 extends along the coordinate axis Y2. The second light-shielding pattern 4 may extend along the coordinate axis X2, and may have a portion along the coordinate axis X2 and a portion along the coordinate axis Y2. A pattern that extends in a direction that forms an acute angle with respect to the side of the planar outer shape of the substrate is also referred to as an oblique pattern in this specification.

  The first transparent substrate 1 shown in FIG. 1 (a) and the second transparent substrate 2 shown in FIG. 1 (b) overlap each other, so that a plan view of the pattern arrangement state is shown in FIG. 1 (c). The photomask 50 that is in the state shown in FIG. Here, the first transparent substrate 1 is overlapped on the second transparent substrate in the state shown in FIG. 1B after repeating the front and back from the state in FIG. As a result, the first surface 5 and the second surface 6 face each other. Moreover, the Y1 axis is reversed by repeating the front and back of the first transparent substrate 1.

  FIG. 2 is a schematic cross-sectional view of the photomask according to Embodiment 1 of the present invention, taken along line II-II in FIG. The first surface 5 on which the first light shielding pattern 3 of the first transparent substrate 1 is formed and the second surface 6 on which the second light shielding pattern 4 of the second transparent substrate 2 is formed are opposed to each other. The first transparent substrate 1 and the second transparent substrate 2 are fixed by intermolecular force, for example. In FIG. 2, the thicknesses of the first light-shielding pattern 3 and the second light-shielding pattern 4 are exaggerated, but in actuality, they are sufficiently thinner than the first transparent substrate 1 and the second transparent substrate 2. The first surface 5 and the second surface 6 are substantially smooth surfaces. Therefore, the intermolecular force required for fixation acts only by overlapping the first transparent substrate 1 and the second transparent substrate 2 and bringing them into contact with each other.

Next, a method for manufacturing the photomask will be described.
3A to 3F are schematic cross-sectional views showing the photomask manufacturing method according to the first embodiment of the present invention in the order of steps. 3A to 3E, the left column indicates a process related to the first transparent substrate 1, and the right column indicates a process related to the second transparent substrate 2.

  As shown in FIG. 3A, a light shielding film 51 is formed on each of the first surface 5 of the first transparent substrate 1 and the second surface 6 of the second transparent substrate 2. This film formation can be performed, for example, by vapor deposition, sputtering, CVD (Chemical Vapor Deposition), or the like.

  As shown in FIG. 3B, a photoresist 52 is applied on the light shielding film 51 in each of the first transparent substrate 1 and the second transparent substrate 2. The resist is applied by, for example, spin coating.

  As shown in FIG. 3C, the photoresist 52 is patterned. This resist patterning is performed, for example, by an exposure process by electron beam drawing and a subsequent development process. Details of this drawing method will be described later. Thereafter, the light shielding film 51 is etched using the patterned photoresist 52 as a mask. This etching is performed by a dry etching method such as IBE (Ion Beam Etching) or RIE (Reactive Ion Etching), or a wet etching method.

  As shown in FIG. 3D, the light shielding film 51 is patterned by the above etching, and the first light shielding pattern 3 is formed on the first transparent substrate 1 and the second light shielding is formed on the second transparent substrate 2. Each pattern 4 is formed from a light shielding film 51. In addition, although the 1st transparent substrate 1 and the 2nd transparent substrate 2 are not over-etched in this figure, over-etching may be performed as needed. Subsequently, the photoresist 52 is peeled off.

  As shown in FIG. 3 (e), the first light shielding pattern 3 is formed on the first surface 5 of the first transparent substrate 1, and the second light shielding pattern 4 is formed on the second surface 6 of the second transparent substrate 2. Is formed. Subsequently, the first transparent substrate 1 and the second transparent substrate 2 are overlaid.

  As shown in FIG. 3F, the first surface 5 of the first transparent substrate 1 and the second surface 6 of the second transparent substrate 2 face each other, and the first transparent substrate 1 and the second surface 6 The first transparent substrate 1 and the second transparent substrate 2 are overlapped so that the two transparent substrates 2 are exactly overlapped in shape. This superposition is performed in a vacuum, for example, details of which will be described later. Thereby, the photomask 50 shown in FIG. 1 is manufactured.

  The superposition of the first transparent substrate 1 and the second transparent substrate 2 is performed in a vacuum chamber 17 as shown in FIG. Specifically, the first transparent substrate 1 and the second transparent substrate 1 are arranged such that the first surface 5 on which the first light-shielding pattern 3 is formed and the second surface 6 on which the second light-shielding pattern 4 is formed face each other. After the transparent substrate 2 is housed in the vacuum chamber 17 and the vacuum chamber 17 is evacuated and the degree of vacuum is increased, the first transparent substrate 1 and the second transparent substrate 2 are overlapped and fixed by intermolecular force. Is done. When superposition is performed in a gas phase or a liquid phase, misalignment tends to occur when the gas or liquid remaining between the substrates escapes. However, this deviation is suppressed in a vacuum.

  Next, the photoresist patterning process shown in FIGS. 3B and 3C will be described in detail.

  FIG. 5 is a schematic perspective view showing a state in which the first surface of the first transparent substrate coated with resist is exposed by the drawing apparatus. As shown in FIG. 5, for example, an electron beam mask drawing device 53 is used as the drawing device. The electron beam mask drawing apparatus 53 mainly includes a LaB6 electron gun 84, a variable shaping lens unit 82, and a convergence changing lens unit 83. In the electron beam mask drawing device 53, electrons emitted from the LaB6 electron gun 84 are a first molded aperture 85, a first molded lens 86, a first molded deflector 87, a second molded lens 88, and a second molded aperture 89. , Through the reduction lens 90, the blanking electrode 91, the deflector 92, and the converging lens 93 in this order to reach the substrate surface to be drawn. At this time, the first transparent substrate 1 is supported by the substrate stage 54 in the first angular state 14.

  FIG. 6 is a schematic perspective view showing a state in which the second surface on which a resist is applied on the second transparent substrate is exposed by the drawing apparatus. Since the configuration of the drawing apparatus is the same as that shown in FIG. 5, the same elements are denoted by the same reference numerals, and the description thereof is omitted.

  The difference is that the second transparent substrate 2 is set to the second angle state 15 rotated from the first angle state 14 of the first transparent substrate 1 shown in FIG. 5 and drawing is performed.

  As a method of rotating from the first angle state (FIG. 5) to the second angle state (FIG. 6), for example, there is a method of rotating the substrate stage 54 as shown in FIG. In this method, after the second transparent substrate 2 is placed on the substrate stage 54, the second stage 6 is set to the second angle state 15 by rotating the substrate stage 54.

  As another method, as shown in FIG. 7, a method of placing the second transparent substrate 2 on the substrate stage 54 so as to be in a second angle state 15 that is rotated from the first angle state 14 by a predetermined angle. is there. In this case, for example, the second transparent substrate 2 is fixed to the substrate stage 54 by a vacuum chuck, an electrostatic chuck, or a mechanical chuck.

  Next, a method for manufacturing an electronic device using the photomask of this embodiment will be described.

  FIG. 8 is a diagram showing a state of exposure using the photomask in the first embodiment of the present invention. As shown in FIG. 8, the light emitted from the lamp house 56 is reflected by the mirror 57, and after passing through the condenser lens 60, the fly-eye lens 58, the aperture 59, the condenser lens 60, the blind 61, and the condenser lens. 60, the mirror 57, and the condensing lens 60 in order, and then reaches the photomask 50 of the present embodiment. The light that has passed through the photomask 50 passes through the condenser lens 60, the pupil plane 62, and the condenser lens 60 and reaches the electronic device formation substrate 64.

  As the electronic device forming substrate 64, for example, a silicon wafer having a surface coated with a photoresist is used.

  9 to 12 are schematic cross-sectional views showing the method of manufacturing the electronic device using the photomask in the first embodiment of the present invention in the order of steps.

  As shown in FIG. 9, a thin film 71 and a photoresist 52 are sequentially formed on an electronic device forming substrate 64. As the electronic device forming substrate 64, for example, a silicon substrate is used, and a thin film 71 is formed on the surface thereof by, for example, sputtering, vapor deposition, CVD, etc., and then a photoresist 52 is applied by spin coating. By doing so, the state of this figure is obtained. Then, the photoresist 52 is exposed using the photomask 50 of the present embodiment shown in FIG. 8, and then developed, whereby the photoresist 52 is patterned.

  As shown in FIG. 10, the thin film 71 is etched using the pattern of the photoresist 52 as a mask. This etching is performed by, for example, a dry etching method such as IBE or RIE, or a wet etching method.

  As shown in FIG. 11, the thin film 71 is patterned by the above etching. This etching is stopped at the interface between the thin film 71 and the electronic device forming substrate 64. Note that the electronic device forming substrate 64 may be over-etched or may be stopped before the interface as necessary. Subsequently, the photoresist 52 is removed.

  As shown in FIG. 12, the resist removal is completed, and the pattern of the thin film 71 is formed on the electronic device forming substrate 64. Thus, an electronic device having a thin film pattern corresponding to the photomask pattern of the present embodiment is manufactured.

Next, the configuration of the electronic device obtained by the above method will be described.
FIG. 13 is a schematic perspective view showing an electronic device obtained by the electronic device manufacturing method according to Embodiment 1 of the present invention. On the electronic device forming substrate 64, a pattern of the thin film 71 is formed in which a pattern extending in the vertical and horizontal directions and a pattern extending in the oblique direction are mixed. The pattern extending in the vertical and horizontal directions extends in substantially the same direction as the outer side of the electronic device forming substrate 64. Further, the pattern extending in the oblique direction extends in a direction that forms an acute angle (for example, 30 degrees, 45 degrees, 60 degrees) with the outer edge of the electronic device forming substrate 64. The pattern extending in the vertical and horizontal directions is obtained by transferring the first light shielding pattern 3 of the photomask 50 in FIG. 1C, and the pattern extending in the oblique direction is transferred by the second light shielding pattern 4. Is.

  The line width of the pattern extending in the vertical and horizontal directions and the line width of the pattern extending in the oblique direction can be made the same. For example, when the line width of the pattern extending in the vertical and horizontal directions is set as the minimum processing dimension in the design rule, the pattern extending in the oblique direction can also be set as the minimum processing dimension.

  According to the present embodiment, as shown in FIG. 1, the first light shielding pattern 3 is placed on the first surface 5 of the first transparent substrate 1, and the second light shielding pattern 4 is placed on the second surface of the second transparent substrate 2. 6 can be formed separately. For this reason, the first light-shielding pattern 3 and the second light-shielding pattern 4 can be drawn and inspected by different devices, and can be processed in parallel. In particular, as shown in FIGS. 5 and 6, processing two transparent substrates 1 and 2 simultaneously in parallel using two drawing apparatuses is called parallel drawing. At this time, since the total occupation time of the apparatus is the same, the cost is the same as the conventional one, but the processing time can be greatly reduced to ½. For this reason, the throughput of the drawing process can be significantly improved.

  Further, since the first light-shielding pattern 3 and the second light-shielding pattern 4 are formed on separate transparent substrates 1 and 2, for example, as shown in FIGS. 5 and 6, the angle of the first transparent substrate 1 with respect to the drawing apparatus The state (FIG. 5) and the angle state (FIG. 6) of the second transparent substrate 2 with respect to the drawing apparatus can be changed. At this time, since the coordinate axis of the first orthogonal coordinate system 7 of the first light-shielding pattern 3 and the coordinate axis of the second orthogonal coordinate system 8 of the second light-shielding pattern 4 form an acute angle, the second transparent substrate is equivalent to the acute angle. If 2 is rotated with respect to the drawing apparatus, the coordinate axis direction of the second orthogonal coordinate system 8 with respect to the drawing apparatus can be aligned with the coordinate axis direction of the first orthogonal coordinate system 7 with respect to the drawing apparatus. Thereby, both the coordinate axis direction of the first orthogonal coordinate system 7 and the coordinate axis direction of the second orthogonal coordinate system 8 can be made the same as the alignment direction of the drawing grid in the drawing apparatus. For this reason, the drawing data does not become strip-like data at the time of drawing the first and second light-shielding patterns 3 and 4, and therefore the data amount of the drawing file can be reduced. This will be described in detail below.

  FIG. 14 is a local enlarged view of drawing data when a drawing apparatus used for drawing a photomask draws a pattern in an oblique direction with respect to a drawing grid of the drawing apparatus. As shown in FIG. 14, when the design data 74 of the light shielding pattern extends obliquely with respect to the alignment direction of the drawing grid 72 of the drawing apparatus, the drawing grid having an overlapping area with the design data 74 (hatching in the figure) (Drawing grid with) is converted into drawing data 73. The drawing data 73 is a collection of strip-shaped patterns, and the outer edge thereof has a jagged shape as indicated by a thick line in the figure. For this reason, the maximum line width of the jagged drawing data is the maximum line width 75 indicated by a one-dot chain line, which is larger than the line width of the design data 74.

  On the other hand, as shown in FIG. 15, even when the design data 76 extends along the alignment direction of the drawing grid 72 of the drawing apparatus, a grid having an overlapping area with the design data 76 (hatched in the drawing is added). Grid) is converted into drawing data 73. In this case, the outer edge of the drawing data 73 is linear as shown by the bold line in the figure, and the line width of the drawing data 73 is smaller than the line width of the drawing data 73 shown in FIG.

  In the present embodiment, as described above, the coordinate axis direction of the first orthogonal coordinate system 7 and the coordinate axis direction of the second orthogonal coordinate system 8 can be made the same as the alignment direction of the drawing grid in the drawing apparatus. For this reason, as shown in FIG. 15, the outer edge of the drawing data 73 is linear, and does not have a jagged shape as shown in FIG. Therefore, the drawing data does not become a strip shape at the time of drawing the first and second light shielding patterns 3 and 4, and the data amount of the drawing file can be reduced.

  Since the data amount of the drawing file can be reduced as described above, the time required for drawing and inspection is reduced. Moreover, since the influence of device drift is reduced by the time reduction, the dimensional accuracy in the longitudinal direction of the pattern is improved. In addition, since the occupation time of the drawing apparatus and the inspection apparatus is shortened, the photomask manufacturing cost is reduced. Moreover, since the direction of the drawing grid and the pattern extending direction can be matched during drawing, the line width accuracy of the pattern is increased in both the first light shielding pattern 3 and the second light shielding pattern 4.

  Further, the first light shielding pattern 3 along the coordinate axis direction of the first orthogonal coordinate system 7 and the second light shielding pattern 4 along the coordinate axis direction of the second orthogonal coordinate system 8 are formed on separate transparent substrates 1 and 2. Therefore, when a defect or a pattern revision occurs in one pattern, it is possible to recreate and replace only one pattern.

  Further, since both the first light shielding pattern 3 and the second light shielding pattern 4 shown in FIG. 1C are drawn by the method shown in FIG. 15, for example, the line widths thereof can be made the same. Hereinafter, this will be described in comparison with the case where the first light shielding pattern 3 and the second light shielding pattern 4 are formed on the same transparent substrate.

  If the first light-shielding pattern 3 and the second light-shielding pattern 4 are formed on the same transparent substrate, the extension of the second light-shielding pattern 4 is achieved by matching the extending direction of the first light-shielding pattern 3 with the alignment direction of the drawing grid. The current direction is oblique to the alignment direction of the drawing grid. For this reason, the line width of the first light shielding pattern 3 corresponds to the line width 76 shown in FIG. 15, whereas the line width of the second light shielding pattern 4 corresponds to the line width having the maximum line width 75 shown in FIG. It will be. Therefore, in this case, the line width of the first light shielding pattern 3 and the line width of the second light shielding pattern 4 cannot be made the same. Further, the outer edge of the first light shielding pattern 3 is linear, whereas the outer edge of the second light shielding pattern 4 has a jagged shape.

  On the other hand, in the present embodiment, since the first light shielding pattern 3 and the second light shielding pattern 4 can be formed separately, the extending directions of both the first light shielding pattern and the second light shielding pattern 4 as described above. 15 can be aligned in the alignment direction of the drawing grid as shown in FIG. Therefore, both the line width of the first light shielding pattern 3 and the line width of the second light shielding pattern 4 can be set to the same line width. Further, the outer edges of the first light shielding pattern 3 and the second light shielding pattern 4 are both linear.

  Moreover, since the line width of the 1st light shielding pattern 3 and the line width of the 2nd light shielding pattern 4 can be made the same, FIG. 13 formed through the process of FIGS. 9-12 using this photomask 50. FIG. In the electronic device, when the line width of the vertical and horizontal patterns is set to the minimum processing dimension in the design rule, the line width of the oblique pattern can be set to the same minimum processing dimension.

  In this embodiment, the thin film formed on the electronic device forming substrate is processed. However, the etching is performed without forming the thin film, so that a pattern is formed on the electronic device forming substrate itself. It is also possible to apply.

(Embodiment 2)
When a defect occurs during photomask fabrication and local correction cannot deal with it, or when a pattern design change (revision) occurs after photomask fabrication, it is necessary to recreate the photomask. In actual product development, such trial and error is repeated many times. For this reason, a photomask re-fabrication process is required.

  16 to 18 are schematic cross-sectional views showing the first to third steps of the photomask refabrication according to the second embodiment of the present invention. With reference to these drawings, a photomask re-fabrication process when the second light-shielding pattern needs to be re-fabricated will be described.

  As shown in FIG. 16, the first transparent substrate 1 and the second transparent substrate 2 constituting the photomask 50 face each other on the surface where the first light-shielding pattern 3 and the second light-shielding pattern 4 exist before re-fabrication. Overlap each other. When the photomask is remanufactured, the two substrates are first separated from each other.

  As shown in FIG. 17, after the separation, for example, the second transparent substrate 2 is remanufactured. Further, the reproduction may be performed on the first transparent substrate 1 or may be performed on both the first transparent substrate 1 and the second transparent substrate 2. At this time, if a pattern defect is dealt with, for example, the second light-shielding pattern 4 is re-created with the same data as the original. In the case of pattern revision, for example, the second light shielding pattern 4 is recreated with the revised drawing data. For example, when only the second light-shielding pattern 4 is recreated, the first transparent substrate 1 that is not shown in FIG. 17 but does not need to be recreated is stored.

  As shown in FIG. 18, the stored first transparent substrate 1 and the re-fabricated second transparent substrate 2 are formed with the surface on which the first light-shielding pattern 3 is formed and the second light-shielding pattern 4. It is overlaid so that the surface faces. Thus, the photomask 50 is remanufactured.

  In the above-described embodiment, the case where there is a problem with the second light shielding pattern has been described. However, when there is a problem with the first light shielding pattern, the first transparent substrate 1 side is remanufactured.

  In conventional photomasks, vertical and horizontal patterns and diagonal patterns are mixed on a single transparent substrate. For this reason, in the conventional photomask re-fabrication method, even if the defect is either a vertical or horizontal pattern or an oblique pattern, if the defect is fatal, the vertical and horizontal pattern and the oblique pattern are combined together. Had to be redrawn. On the other hand, in the present embodiment, vertical and horizontal patterns and diagonal patterns are formed on separate transparent substrates 1 and 2. For this reason, it is only necessary to redraw only one of the vertical and horizontal patterns or the diagonal pattern that has a defect. Accordingly, it is possible to reduce the cost and work period required for photomask correction and design change.

(Embodiment 3)
In the correction or revision of the photomask described in the second embodiment, the step of separating or overlaying the first transparent substrate 1 and the second transparent substrate 2 is preferably performed in a vacuum chamber. As the vacuum chamber, as shown in FIG. 4, the same one as in the first embodiment can be used.

  If two substrates are superposed in a gas phase or a liquid phase, the displacement tends to occur when the gas or liquid remaining between the substrates escapes. If the operation is performed in a vacuum, no substance is present between the first transparent substrate 1 and the second transparent substrate 2, so that misalignment hardly occurs. Therefore, alignment between substrates becomes easy.

  If the process of separating the two transparent substrates 1 and 2 is performed in a vacuum, the separation is performed without being disturbed by atmospheric pressure.

  Therefore, when both substrates are brought into close contact, such as when the first transparent substrate 1 and the second transparent substrate 2 are fixed by intermolecular force, the first transparent substrate 1 and the second transparent substrate 2 are The atmosphere of the work to be removed or assembled is particularly preferably in a vacuum.

(Embodiment 4)
The present embodiment is basically the same as the first embodiment, but an alignment mark for accurately superimposing the two substrates 1 and 2 on the first transparent substrate 1 and the second transparent substrate 2 is provided. It differs in that it is formed.

  FIG. 19 is a plan view schematically showing a configuration in which alignment marks are formed on a photomask according to Embodiment 4 of the present invention. For example, as shown in the figure, cross-shaped alignment marks 9 are formed at the four corners of the first transparent substrate 1. The second transparent substrate 2 is also formed with alignment marks similar to those in FIG. By referring to the alignment mark 9, the first transparent substrate 1 and the second transparent substrate 2 can be accurately superimposed.

  In addition, since this Embodiment other than this is as substantially the same as the structure of Embodiment 1 mentioned above, the same code | symbol is attached | subjected about the same or an equivalent element, and the description is abbreviate | omitted.

  Further, since the photomask is manufactured at an enlargement magnification of, for example, 4 to 5 times that of the wafer on which the electronic device is formed, the alignment accuracy of the photomask can be about 4 to 5 times as rough as that of the wafer.

(Embodiment 5)
The present embodiment is basically the same as the first embodiment except that the first light-shielding pattern and the second light-shielding pattern are embedded in the first transparent substrate and the second transparent substrate, respectively. Yes.

  FIG. 20 is a cross sectional view schematically showing a configuration of a photomask in the fifth embodiment of the present invention. As shown in FIG. 20, the first light shielding pattern 3 is filled in a groove formed on the surface of the first transparent substrate 1. As a result, the first light shielding pattern 3 is embedded in the first transparent substrate 1. The second light shielding pattern 4 is filled in a groove formed on the surface of the second transparent substrate 2. As a result, the second light shielding pattern 4 is embedded in the second transparent substrate 2.

  FIG. 21 is a diagram showing a modification of the present embodiment. As shown in FIG. 21, only the first light shielding pattern 3 is embedded in the first transparent substrate 1. The first light shielding pattern 3 may not be embedded in the first transparent substrate 1, and only the second light shielding pattern 4 may be embedded in the second transparent substrate 2.

  Next, a manufacturing method for obtaining a light-shielding pattern with this embedded structure will be described with reference to FIGS.

  22 to 27 are schematic cross-sectional views illustrating a manufacturing method for obtaining a light-shielding pattern having a buried structure in the order of steps. As shown in FIG. 22, a photoresist 52 is applied on the surface of the first transparent substrate 1. Thereafter, the photoresist 52 on the first transparent substrate 1 is exposed and developed.

  As shown in FIG. 23, the photoresist 52 on the first transparent substrate 1 is patterned by the above exposure and development. Subsequently, the first transparent substrate 1 is etched using the pattern of the photoresist 52 as a mask.

  As shown in FIG. 24, the groove 16 is formed on the first transparent substrate 1 by the etching described above. Subsequently, the photoresist 52 is removed.

  As shown in FIG. 25, the entire surface of the first transparent substrate 1 is exposed by the removal of the photoresist 52 described above.

  As shown in FIG. 26, a light shielding film 51 is formed on the exposed surface of the first transparent substrate 1. Thereby, the light shielding film 51 is filled in the grooves 16 on the surface of the first transparent substrate 1, and the light shielding film 51 is also formed on the surface where the grooves are not formed. Subsequently, surface polishing is performed in order to remove the light shielding film 51 existing in a portion other than the groove 16.

  As shown in FIG. 27, by the above surface polishing, the light shielding film remains only in the groove 16 portion of the first transparent substrate 1, and the light shielding film 51 is embedded in a pattern on the surface of the first transparent substrate 1.

  Note that the second transparent substrate in which the second light-shielding pattern is embedded can also be manufactured by the same method as described above.

  According to the embedded structure as in the present embodiment, the mechanical durability of the light shielding pattern can be improved. Therefore, this embodiment is particularly preferable when the light-shielding pattern is in direct contact with another object, such as when the first transparent substrate 1 and the second transparent substrate 2 are fixed by intermolecular force.

(Embodiment 6)
28 (a) to 28 (e) are cross-sectional views schematically showing a parallel inspection process for light shielding patterns in Embodiment 6 of the present invention. The parallel inspection process will be described below with reference to these drawings.

  As shown in FIG. 28A, in the pre-inspection photomask, the first transparent substrate 1 and the second transparent substrate 1 are arranged so that the formation surface of the first light shielding pattern 3 and the formation surface of the second light shielding pattern 4 face each other. The transparent substrate 2 is overlaid. In the inspection, first, the first transparent substrate 1 and the second transparent substrate 2 are separated.

  As shown in FIG. 28B, since the first transparent substrate 1 and the second transparent substrate 2 are separated, pattern inspection is performed separately for each of the first light-shielding pattern 3 and the second light-shielding pattern 4. Is done.

  As shown in FIG. 28C, in the above-described inspection, for example, when a defect is found in the second light shielding pattern 4, only the second light shielding pattern 4 is corrected. If the correction is insufficient, the second light-shielding pattern 4 is recreated. Although not shown, the first transparent substrate 1 having no problem is stored.

  As shown in FIG. 28 (d), after it is confirmed by inspection that both the first light shielding pattern 3 and the second light shielding pattern 4 are non-defective, the first transparent substrate 1 and the second transparent substrate 2 Are superimposed.

  As shown in FIG. 28 (e), the first transparent substrate 1 and the second transparent substrate 2 having a non-defective pattern are superimposed to obtain a photomask 50 in which the defect is corrected.

  If the photomask is in the initial manufacturing stage and the pattern inspection before the first overlay of the first transparent substrate 1 and the second transparent substrate 2 is performed, the inspection process starts from the state of FIG. Be started.

  Further, the separation or superposition of the first transparent substrate 1 and the second transparent substrate 2 is preferably performed in a vacuum for the same reason as in the second embodiment.

  The process of FIG. 28B in which the pattern is inspected takes time and cost nearly half of the entire photomask fabrication. According to the inspection of the light shielding pattern according to the present embodiment, since the two transparent substrates 1 and 2 are separated from FIG. 28B to FIG. 28D, they can be processed separately. Therefore, two transparent substrates 1 and 2 can be processed simultaneously in parallel using a plurality of photomask inspection apparatuses. This is called parallel inspection. At this time, since the total occupation time of the apparatus is the same, the cost is the same as the conventional one, but the processing time is greatly reduced. In the example of FIG. 28, since the pattern is divided into two, the processing time is halved, and the throughput of the inspection process is greatly improved.

  Conventionally, the photomask inspection process cannot be parallelized. That is, one photomask inspection has to be inspected by one photomask inspection apparatus from the beginning to the end. For this reason, even a photomask that needs to be produced on an express basis due to special circumstances cannot be handled as an express train because a predetermined time is required for the inspection accompanying the production. According to the present embodiment, the vertical and horizontal patterns and the oblique patterns can be inspected simultaneously and separately by separate photomask inspection apparatuses. Therefore, even a photomask that requires rapid progress due to special circumstances can be manufactured with quick delivery. Therefore, when the production amount of various electronic devices is adjusted according to the market trend, a photomask used for the production can be quickly prepared.

(Embodiment 7)
This embodiment is basically the same as the first embodiment except that a phase grating is formed on the photomask. Since the configuration other than this is almost the same as that of the first embodiment described above, the same or equivalent elements are denoted by the same reference numerals in the following description, and the description thereof is omitted.

  FIG. 29 is a schematic cross-sectional view showing the configuration of the photomask in the seventh embodiment of the present invention. As shown in FIG. 29, the phase grating 10 is formed on the surface of the second transparent substrate 2 opposite to the surface on which the second light shielding pattern 4 is formed. For this reason, the diffracted light 78 that has passed through the second light-shielding pattern 4 is diffracted again by the phase grating 10 and becomes re-diffracted light 79. Thereby, the same effect as illuminating the photomask pattern from an oblique direction can be obtained. Therefore, since the effect of the modified illumination method can be obtained, the resolution is improved and the depth of focus is expanded.

  FIG. 30 is a schematic cross-sectional view showing a configuration of a photomask, which is a modification of the present embodiment. The difference from the photomask shown in FIG. 29 is that the phase grating 10 is provided not on the surface of the second transparent substrate 2 but on the surface opposite to the light shielding pattern forming surface of the first transparent substrate 1. . According to this configuration, the incident light 80 on the photomask is made diffracted light 78 by the phase grating 10, and the photomask pattern is illuminated obliquely. As a result, the effect of the modified illumination method can be obtained, so that the resolution is improved and the depth of focus is expanded.

(Embodiment 8)
In the present embodiment, the planar shape of the phase grating will be described.

  31 and 32 are schematic plan views showing the planar pattern shape of the phase grating of the photomask in the eighth embodiment. As shown in FIG. 31, the striped phase grating 10 is formed along the coordinate axis direction 11 representing the extending direction of the first light-shielding pattern or the second light-shielding pattern.

  Alternatively, as shown in FIG. 32, the checkered phase grating 10 is formed along the coordinate axis direction 11 representing the extending direction of the first light shielding pattern or the second light shielding pattern.

  The coordinate axis direction 11 is the coordinate axis direction of either the first orthogonal coordinate system 7 or the second orthogonal coordinate system 8 shown in FIG.

(Embodiment 9)
The present embodiment is basically the same as the first embodiment, except for the method of stacking and fixing the first transparent substrate and the second transparent substrate.

  FIG. 33 is a schematic cross-sectional view showing a method of fixing the first transparent substrate and the second transparent substrate in the seventh embodiment of the present invention. In the first embodiment, the intermolecular force acting between the two substrates is used. However, in the present embodiment, as shown in FIG. 33, the first transparent substrate 1 and the second transparent substrate 2 are fixed to the fixing jig 77. Fixed through.

  In addition, since the structure of this Embodiment other than this is as substantially the same as the structure of Embodiment 1 mentioned above, the same code | symbol is attached | subjected about the same or an equivalent element, and the description is abbreviate | omitted.

(Embodiment 10)
The present embodiment is basically the same as the first embodiment, but the angle is set in the extending direction of the light shielding pattern formed on the first transparent substrate 1 and the second transparent substrate 2 in the drawing stage. Instead, the first transparent substrate 1 and the second transparent substrate 2 are provided with an angle in the overlapping step. The following description will focus on this difference.

  FIG. 34 is a schematic plan view showing a first transparent substrate and a second transparent substrate that constitute a photomask according to Embodiment 10 of the present invention. Unlike the first embodiment shown in FIGS. 1A and 1B, in the tenth embodiment, as shown in FIG. 34, the first light shielding pattern 3 and the second light shielding pattern 4 are , Extending in the same direction relative to the substrate.

  FIG. 35 is a schematic plan view showing an arrangement state of light shielding patterns in the tenth embodiment of the present invention. Unlike the case of FIG. 1C in the first embodiment, in the present embodiment, the first transparent substrate 1 and the second transparent substrate 2 have the outer shape of the first transparent substrate 1 as shown in FIG. The second transparent substrate 2 is overlaid with its outer shape shifted. Corresponding to the angle of deviation, the direction in which the first light shielding pattern 3 extends and the direction in which the second light shielding pattern 4 extends form an acute angle. As a result, as in the first embodiment, the first light shielding pattern 3 extending in the coordinate axis direction of the first orthogonal coordinate system and the first light shielding pattern 3 extending in the coordinate axis direction forming an acute angle with the coordinate axis direction of the first orthogonal coordinate system. A photomask composed of two light-shielding patterns 4 is obtained.

  According to the present embodiment, as shown in FIG. 35, a region where the first transparent substrate 1 and the second transparent substrate 2 do not overlap occurs, and such a region cannot be used. Therefore, in order to use the transparent substrate widely, a method in which the outer shape of the first transparent substrate 1 and the outer shape of the second transparent substrate 2 just overlap each other as in the first embodiment described above rather than the present embodiment. Is preferred.

  Further, as shown in the first embodiment, the first light shielding pattern 3 and the second light shielding pattern 4 extend in different directions with respect to the substrate, and at the same time, as shown in the tenth embodiment. It is also possible to overlap the first transparent substrate 1 and the second transparent substrate 2 with an angle.

In the above, a plurality of embodiments have been shown to illustrate the present invention.
For the sake of clarity, the first light shielding pattern and the second light shielding pattern are drawn large with respect to the substrate to be formed in the drawing. For example, the photomask of the present invention is a large-scale integrated circuit. When used for manufacturing, hundreds of millions of fine patterns of, for example, about 1 micron are formed corresponding to the circuit pattern.

  In each embodiment, the square first transparent substrate and the second transparent substrate are used. However, the present invention is not limited to this, and even the orientation of the arbitrary shape can be determined. It can be used if possible. For example, a circular substrate on which notches and orientation flats are formed can be used for orientation determination. In the drawing process, the orientation shape is referred to.

  Further, the angle formed by the first orthogonal coordinate system and the second orthogonal coordinate system only needs to have an azimuth difference of an angle exceeding 0 degrees and smaller than 90 degrees. According to the present invention, an oblique pattern corresponding to this angle is accurately formed.

  In each embodiment, the first light-shielding pattern and the second light-shielding pattern exist without overlapping. However, the present invention is not limited to this, and the both may exist overlappingly. Good.

  In each embodiment, the resist is exposed with an electron beam. However, the present invention is not limited to this, and other beam drawing techniques such as laser and X-ray may be used.

  In each embodiment, only the light shielding pattern extending in the coordinate axis direction of the first orthogonal coordinate system is formed on the first transparent substrate, and the second orthogonal coordinate system is formed on the second transparent substrate. Only the light shielding pattern extending in the direction of the coordinate axis is formed, but the present invention is not limited to this, in addition to the first light shielding pattern on the first surface of the first transparent substrate, Furthermore, there may be a pattern with a different extending direction, or a pattern with a different extending direction may be present on the second surface of the second transparent substrate in addition to the second light shielding pattern. . Even in such a case, if attention is paid to a specific portion of the pattern, the effect of the present invention is still obtained.

  In each of the embodiments, when a photomask is used, the light travels from the first transparent substrate to the second transparent substrate. However, the entire photomask is repeated so that the light is second. You may make it progress from a transparent substrate to a 1st transparent substrate.

  An example of an electronic device manufactured by the electronic device manufacturing method of the present invention is a semiconductor element. In the semiconductor device according to the present invention, the diagonal wiring is freely used in design, so that the chip area of the semiconductor device is reduced and the manufacturing cost is reduced. At the same time, since the wiring length can be shortened, the electrical resistance is reduced and the crosstalk between the wirings is reduced, so that the performance as a semiconductor element is improved.

  Another example of an electronic device is a liquid crystal display element having diagonal wiring. Usually, since it is formed only by a vertical and horizontal pattern, a liquid crystal display element having an orthogonal lattice shape is generally used. However, since the liquid crystal display element manufactured by the manufacturing method of the present invention has sufficient processing accuracy for oblique wiring, a face-centered liquid crystal display element having high dimensional accuracy can be obtained. Since the face-centered lattice has a higher density than the orthogonal lattice, the image quality is improved.

  As another example of the electronic device, there is an imaging element having diagonal wiring. Since it is usually formed only with vertical and horizontal wirings, an orthogonal lattice-shaped image sensor is common. However, since the imaging device according to the manufacturing method of the present invention has sufficient processing accuracy for oblique wiring, it can be a face-centered lattice-like imaging device having high dimensional accuracy. Since the face-centered lattice has a higher density than the orthogonal lattice, the image quality is improved.

  As another example of the electronic device, there is a magnetic head including a thin film coil based on an octagon. Usually, since it is formed only by vertical and horizontal wirings, a coil based on a quadrangle is formed. However, the magnetic head according to the present invention has sufficient processing accuracy even with diagonal wiring, and an octagon-based coil can be formed on the magnetic head. Since an octagon is closer to a circle than a quadrangle, data writing and reading errors are less likely to occur.

  Note that the electronic device of the present invention is not limited to the above, and an electron in which a pattern extending in the coordinate axis direction of the first orthogonal coordinate system and a pattern extending in the coordinate axis direction of the second orthogonal coordinate system are mixed. Any electronic device may be used as long as both patterns are fine and dimensional accuracy is required.

  As mentioned above, each embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is particularly advantageously applied to a photomask in which vertical and horizontal patterns and oblique patterns are mixed, and a manufacturing method thereof, and an electronic device manufacturing method in which vertical and horizontal patterns and diagonal patterns are mixed.

It is explanatory drawing for demonstrating schematically the structure of the photomask in Embodiment 1 of this invention. It is sectional drawing which shows roughly the structure of the photomask in Embodiment 1 of this invention. It is sectional drawing which shows schematically the manufacturing method of the photomask in Embodiment 1 of this invention. FIG. 5 is a cross-sectional view schematically showing a state in which the first transparent substrate and the second transparent substrate are overlaid in a vacuum chamber in the photomask manufacturing method according to Embodiment 1 of the present invention. In the manufacturing method of the photomask in Embodiment 1 of this invention, it is a perspective view which shows roughly the mode of drawing with the mask drawing apparatus to a 1st transparent substrate. In the manufacturing method of the photomask in Embodiment 1 of this invention, it is a perspective view which shows roughly the mode of drawing by the mask drawing apparatus to a 2nd transparent substrate. It is a modification of Embodiment 1 of this invention, Comprising: It is a top view which shows the state which mounts a board | substrate on a substrate stage schematically. It is sectional drawing which shows roughly the mode of the exposure process by the manufacturing method of the electronic device in Embodiment 1 of this invention. It is sectional drawing which shows roughly the 1st process of the manufacturing method of the electronic device in Embodiment 1 of this invention. It is sectional drawing which shows schematically the 2nd process of the manufacturing method of the electronic device in Embodiment 1 of this invention. It is sectional drawing which shows roughly the 3rd process of the manufacturing method of the electronic device in Embodiment 1 of this invention. It is sectional drawing which shows schematically the 4th process of the manufacturing method of the electronic device in Embodiment 1 of this invention. It is a perspective view which shows roughly the electronic device in Embodiment 1 of this invention. FIG. 4 is a schematic local enlarged view of drawing data extending obliquely with respect to a drawing grid of the drawing apparatus. FIG. 4 is a schematic local enlarged view of drawing data extending along a drawing grid of the drawing apparatus. It is sectional drawing which shows roughly the 1st process of remanufacturing the photomask in Embodiment 2 of this invention. It is sectional drawing which shows roughly the 2nd process of remanufacturing the photomask in Embodiment 2 of this invention. It is sectional drawing which shows roughly the 3rd process of the remanufacturing of the photomask in Embodiment 2 of this invention. It is a top view which shows roughly the alignment mark in Embodiment 4 of this invention. It is sectional drawing which shows schematically the photomask in Embodiment 5 of this invention. It is sectional drawing which shows roughly the modification of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows roughly the 1st process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows roughly the 2nd process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows roughly the 3rd process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows schematically the 4th process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows schematically the 5th process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows schematically the 6th process of the manufacturing method of the photomask in Embodiment 5 of this invention. It is sectional drawing which shows roughly the parallel test | inspection of the light shielding pattern in Embodiment 6 of this invention. It is sectional drawing which shows schematically the photomask in Embodiment 7 of this invention. It is sectional drawing which shows schematically the photomask in the modification of Embodiment 7 of this invention. It is a top view which shows schematically the pattern of the phase grating in Embodiment 8 of this invention. It is a top view which shows schematically the pattern of the phase grating in Embodiment 8 of this invention. It is sectional drawing which shows roughly the fixing method of the 1st transparent substrate and 2nd transparent substrate in Embodiment 9 of this invention. It is a top view which shows roughly the 1st transparent substrate and 2nd transparent substrate which comprise the photomask in Embodiment 10 of this invention. It is a top view which illustrates roughly the structure of the photomask in Embodiment 10 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 1st transparent substrate, 2nd 2nd transparent substrate, 3rd 1st light shielding pattern, 4th 2nd light shielding pattern, 5 1st surface, 6 2nd surface, 7 1st orthogonal coordinate system, 8 2nd orthogonal coordinate System, 9 alignment mark, 10 phase grating, 11 coordinate axis direction, 14 first angle state, 15 second angle state, 16 groove, 17 vacuum chamber, 50 photomask, 51 light-shielding film, 52 photoresist, 53 electron beam Mask drawing device, 54 substrate stage, 56 lamp house, 57 mirror, 58 fly eye lens, 59 aperture, 60 condenser lens, 61 blind, 62 pupil plane, 63 projection optical system, 64 electronic device forming substrate, 70 projection exposure device 71 Thin film 72 Drawing grid 73 Drawing data 74 Design data 75 Maximum line width 76 Line width 77 Fixing jig 8 diffracted light, 79 re-diffracted light, 80 incident light, 82 variable shaping lens, 83 converging deflection lens, 84 LaB6 electron gun, 85 first shaping aperture, 86 first shaping lens, 87 first shaping deflector, 88 Second molded lens, 89 Second molded aperture, 90 reduction lens, 91 blanking electrode, 92 deflector, 93 converging lens.

Claims (13)

A first transparent substrate;
A second transparent substrate superimposed on the first transparent substrate;
A first light shielding pattern formed on the first surface of the first transparent substrate facing the second transparent substrate, and extending along the coordinate axis direction of the first orthogonal coordinate system on the first surface. When,
A coordinate axis formed on a second surface of the second transparent substrate facing the first transparent substrate and extending on the second surface so as to form an acute angle with the coordinate axis of the first orthogonal coordinate system; And a second light-shielding pattern extending in the coordinate axis direction of the second orthogonal coordinate system.   The photomask according to claim 1, wherein the first transparent substrate and the second transparent substrate are fixed by an intermolecular force.   The photomask according to claim 1, wherein the first light shielding pattern is embedded in the first transparent substrate.   The photomask according to claim 1, wherein the second light shielding pattern is embedded in the second transparent substrate.   The photomask according to claim 1, wherein an alignment mark is formed on each of the first transparent substrate and the second transparent substrate.   6. The phase grating according to claim 1, further comprising a phase grating formed on at least one of a back surface of the first surface of the first transparent substrate and a back surface of the second surface of the second transparent substrate. The photomask described in 1.   The photo according to claim 6, wherein the phase grating has a planar shape of a striped pattern or a checkered pattern along at least one coordinate axis of the first orthogonal coordinate system and the second orthogonal coordinate system. mask.   The photomask according to claim 1, wherein the first transparent substrate and the second transparent substrate are configured to be detachable from each other. In order to form a first light-shielding pattern extending along the coordinate axis direction of the first orthogonal coordinate system on the first surface of the first transparent substrate, the first transparent substrate is set to a first angle state and drawn. A first drawing step,
The second transparent substrate extends along the coordinate axis direction of the second orthogonal coordinate system including coordinate axes extending on the second surface so as to form an acute angle with the coordinate axis of the first orthogonal coordinate system on the second surface of the second transparent substrate. A second drawing step of setting and drawing the second transparent substrate to a second angle state rotated from the first angle state in order to form a second light-shielding pattern;
A method for manufacturing a photomask, comprising: an overlapping step of overlapping the first transparent substrate and the second transparent substrate with the first surface and the second surface facing each other.   The photomask manufacturing method according to claim 9, wherein the first drawing step and the second drawing step are performed in parallel. A first light shielding pattern inspection step for inspecting the first light shielding pattern;
A second light shielding pattern inspection step for inspecting the second light shielding pattern,
The photomask manufacturing method according to claim 9 or 10, wherein the first light-shielding pattern inspection step and the second light-shielding pattern inspection step are performed in parallel.   The manufacturing method of the photomask in any one of Claims 9-11 with which the said superimposition process is performed within a vacuum chamber.   A method of manufacturing an electronic device, wherein a pattern is formed using the photomask according to claim 1.

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