JP2007266236A - Manufacturing method of substrate for electro-optical device, and manufacturing method of electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate for an electro-optical device with which an electro-optical device can be easily manufactured even if the number of pixels increases due to higher resolution of the electro-optical device, by processing an insulating layer in a short time with a simple device to form an opening; and to provide a manufacturing method of the electro-optical device. <P>SOLUTION: In the manufacturing method of the substrate for the electro-optical device; a source electrode 14, a drain electrode 16, and an organic semiconductor layer 18 are formed on a substrate 12. A gate insulating film 20 is formed for covering the source electrode 14, the drain electrode 16, and the organic semiconductor layer 18. A gate electrode 22 is formed on the gate insulating layer 20. An interlayer insulating layer 24 for covering the gate insulating layer 20 and the gate electrode 22 is formed. The opening piercing at least the interlayer insulating layer 24 and the gate insulating layer 20 and allowing one part of the drain electrode 16 to expose is formed using a mechanical stress. A pixel electrode 28 electrically connected to the drain electrode 16 through the opening is formed on the interlayer insulating layer 24. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a substrate for an electro-optical device and a method for manufacturing an electro-optical device.

In an electro-optical device using an organic semiconductor as an active matrix element, when patterning is performed by an inkjet method, it is difficult to reduce the size of the active matrix element, so that the area of the pixel electrode is reduced and the aperture ratio is reduced.

As a method for realizing a high-resolution, high-aperture-ratio electro-optical device, apart from the pixel electrode connected to the active matrix element (integrated with the drain electrode), the pixel electrode is formed so as to cover the active matrix element with the insulating layer interposed therebetween. There is proposed a method of increasing the area of the entire pixel electrode by forming one pixel with two pixel electrodes (see, for example, Patent Document 1).

As another method for realizing an electro-optical device having a high aperture ratio, an active matrix element is formed through an opening provided in an insulating layer between an upper layer pixel electrode of the active matrix element and an active matrix element below. There has been proposed a method of electrically connecting to the cable. In this method, the insulating layer is processed by a method such as etching or laser light irradiation to form an opening (see, for example, Patent Document 2).

JP 2005-202194 A JP 2004-4714 A

However, processing by etching requires a plurality of steps, and processing by laser light irradiation requires an expensive processing device. When the resolution of the electro-optical device is increased and the number of pixels increases, the number of openings increases corresponding to the number of pixels. Therefore, it is required to process the insulating layer quickly with a simple process.

An object of the present invention is to process an insulating layer in a short time and form an opening with a simple device, so that the electro-optical device can be easily manufactured even when the resolution of the electro-optical device is increased and the number of pixels is increased. Another object of the present invention is to provide a method for manufacturing a substrate and a method for manufacturing an electro-optical device.

(1) A method for manufacturing a substrate for an electro-optical device according to the present invention includes: forming a source electrode, a drain electrode, and a semiconductor layer on the substrate; and covering the source electrode, the drain electrode, and the semiconductor layer. Forming a gate insulating layer, forming a gate electrode on the gate insulating layer, forming an interlayer insulating layer covering the gate insulating layer and the gate electrode, and at least the interlayer insulating layer Forming an opening through the gate insulating layer and exposing a part of the drain electrode by mechanical stress, and the drain electrode on the interlayer insulating layer via the opening. Forming a pixel electrode that is electrically connected to the substrate. According to the present invention, since the interlayer insulating layer and the gate insulating layer are processed by mechanical stress, the processing can be performed by a simple process, not by etching or laser light irradiation. Therefore, by processing the insulating layer (interlayer insulating layer and gate insulating layer) in a short time with a simple device and forming the opening, the electro-optical device can be easily manufactured even if the resolution is increased and the number of pixels is increased. Can do.

(2) In this method for manufacturing a substrate for an electro-optical device, the mechanical stress may be a press using a punch and a die plate.

(3) In this method for manufacturing a substrate for an electro-optical device, the tip of the punch may be tapered.

(4) In this method for manufacturing a substrate for an electro-optical device, the cross-section at the tip of the punch may have a corner shape.

(5) In this method for manufacturing a substrate for an electro-optical device, the mechanical stress may be scraping using a scraper.

(6) In this method for manufacturing a substrate for an electro-optical device, the opening may be formed so as not to penetrate the substrate.

(7) In this method for manufacturing a substrate for an electro-optical device, the opening may be formed so as not to penetrate the drain electrode.

(8) An electro-optical device manufacturing method according to the present invention includes the above-described electro-optical device substrate manufacturing method.

Embodiments of the present invention will be described below with reference to the drawings.
(First embodiment)
FIG. 1 is a schematic plan view showing an electro-optical device substrate according to a first embodiment of the present invention. 2 is a view showing a cross section taken along line II-II in FIG.

The electro-optical device substrate 10 according to the present exemplary embodiment includes a substrate 12 as shown in FIGS.
(See FIG. 2), source electrode 14, drain electrode 16, organic semiconductor layer 18 as a semiconductor layer, gate insulating layer 20 (see FIG. 2), gate electrode 22, interlayer insulating layer 24, and opening A via hole 26 as a part and a pixel electrode 28 are included. First, each component of the electro-optical device substrate 10 according to the present embodiment will be described.

  The material of the substrate 12 is, for example, glass or plastic.

As shown in FIG. 2, the source electrode 14 and the drain electrode 16 are formed on the substrate 12 so as to be separated from each other by a predetermined distance. The material of the source electrode 14 and the drain electrode 16 is, for example, Au.

The organic semiconductor layer 18 is formed across a part of the upper surface of the source electrode 14, the upper surface of the substrate 12 between the source electrode 14 and the drain electrode 16, and a part of the upper surface of the drain electrode 16. As the material of the organic semiconductor layer 18, either a low molecular organic semiconductor material or a polymer organic semiconductor material can be selected. The material of the organic semiconductor layer 18 is, for example, F8T2 (fluorene-bithiophene copolymer).

The gate insulating layer 20 includes the substrate 12, the source electrode 14, the drain electrode 16, and the organic semiconductor layer 1.
8 is formed so as to cover 8. The material of the gate insulating layer 20 is not particularly limited as long as it is a known insulator material.

The gate electrode 22 is formed in a region overlapping the organic semiconductor layer 18 on the gate insulating layer 20. The material of the gate electrode 22 is, for example, Ag.

The interlayer insulating layer 24 is formed so as to cover the gate insulating layer 20 and the gate electrode 22. The material of the interlayer insulating layer 24 is not particularly limited as long as it is a known insulator material.

The via hole 26 is formed so as to penetrate at least the interlayer insulating layer 24 and the gate insulating layer 20 and to expose a part of the drain electrode 16. For example, the via hole 26 penetrates the interlayer insulating layer 24, the gate insulating layer 20, the drain electrode 16, and the substrate 12, and the drain electrode 1.
6 is formed so that the cross section of 6 is exposed. The via hole 26 may not penetrate the substrate 12. Further, the via hole 26 may not penetrate the drain electrode 16. The via hole 26 may be formed to taper from the interlayer insulating layer 24 side toward the substrate 12 side.

The pixel electrode 28 includes at least the source electrode 14 and the drain electrode 16 on the interlayer insulating layer 24.
In the region overlapping with the organic semiconductor layer 18 and the gate electrode 22, the drain electrode 16 is electrically connected via the via hole 26. The pixel electrode 28 is formed to fill the via hole 26, for example. The material of the pixel electrode 28 is, for example, Ag.

The source electrode 14, the drain electrode 16, the organic semiconductor layer 18, the gate insulating layer 20, and the gate electrode 22 constitute an organic transistor 30. The organic transistor 30 is formed on the substrate 12
For example, they are arranged in a matrix (see FIG. 1). The organic transistor 30 has a function as a switching element that controls the pixel electrode 28.

Next, a method for manufacturing the electro-optical device substrate according to the present embodiment will be described with reference to the drawings. 3, 4, and 5 are views for explaining a method of manufacturing the electro-optical device substrate according to the first embodiment.

In the method of manufacturing the electro-optical device substrate 10 according to the present embodiment, first, as shown in FIG. 3A, a substrate 12 is prepared, and a source electrode 14, a drain electrode 16, and an organic semiconductor layer are formed on the substrate 12. 18. Specifically, first, the source electrode 14 and the drain electrode 16 are formed on the substrate 12.
And form. As a method of forming the source electrode 14 and the drain electrode 16, a known electrode forming method is applied. Next, the organic semiconductor layer 18 is formed on the top surfaces of the substrate 12, the source electrode 14, and the drain electrode 16. As a method for forming the organic semiconductor layer 18, for example, a droplet discharge method is applied.

Next, as shown in FIG. 3B, the source electrode 14, the drain electrode 16, and the organic semiconductor layer 1
8 is formed. As a method for forming the gate insulating layer 20, for example, a spin coating method is applied.

Next, as illustrated in FIG. 3C, the gate electrode 22 is formed over the gate insulating layer 20. As a method for forming the gate electrode 22, for example, a droplet discharge method is applied.

Next, as illustrated in FIG. 3D, an interlayer insulating layer 24 that covers the gate insulating layer 20 and the gate electrode 22 is formed. As a method of forming the interlayer insulating layer 24, for example, a vapor deposition method is applied.

Next, as shown in FIG. 4, at least through the interlayer insulating layer 24 and the gate insulating layer 20,
A via hole 26 from which a part of the drain electrode 16 is exposed is formed by mechanical stress. In the present embodiment, the mechanical stress is, for example, a press using a punch and a die plate. As shown in FIG. 4A, the punch 40 has, for example, a shape with a straight tip. For example, the punch 40 has a circular cross section at the tip. When the cross-section of the tip of the punch is circular, the mechanical stress applied to the press portion is uniform over the entire circumference of the punch tip. Die plate 50
For example, the support surface has a recess 52. The lower surface of the substrate 12 is supported by the die plate 50, and the punch 40 is pressed from the upper surface side of the interlayer insulating layer 24 toward the substrate 12 side. At this time, the die plate 50 is arranged so that a region where the organic semiconductor layer 18 is not formed on the upper surface of the drain electrode 16 overlaps the recess 52. The punch 40 is pressed against a region overlapping the concave portion 52 of the interlayer insulating layer 24, and is pressed until the tip of the punch 40 penetrates at least the interlayer insulating layer 24 and the gate insulating layer 20.

Next, as shown in FIG. 4B, the interlayer insulating layer 24, the gate insulating layer 20, and the drain electrode 1
6 and the substrate 12 are pressed until they pass through the interlayer insulating layer 24 and the gate insulating layer 2.
0, the drain electrode 16 and the via hole 26 penetrating the substrate 12 are formed. A cross section of the drain electrode 16 is exposed in the via hole 26.

As shown in FIG. 5, the tip of the punch may be tapered so as to taper. As shown in FIG. 5A, the punch 42 is tapered so as to taper at the tip. When the punch 42 and the die plate 50 are pressed in combination, the punch 42 becomes narrower toward the tip, so that the via hole 32 extends from the interlayer insulating layer 24 side to the substrate 12 side as shown in FIG. It is formed to taper toward. As a result, the cross section of the drain electrode 16 is inclined, and the cross sectional area of the drain electrode 16 exposed in the via hole 32 can be increased.

FIG. 6 is a view for explaining the cross-sectional shape of the front end of the punch along the line VI-VI in FIG. 4. The cross section of the tip of the punch 40 may have a corner shape as shown in FIG. The cross-section at the tip of the punch 40 is, for example, a rectangle, a triangle, or a star. When the cross section of the tip of the punch 40 is rectangular, as shown in FIG. 6, the mechanical stress applied to the press portion is nonuniform at the portion where the corner portion 44 abuts and the portion where the straight portion 46 abuts. Thereby, when pressing, a punch having a cross section at the tip is more likely to cause partial breakage in the press portion than a circular punch, and can penetrate the press portion more easily. Therefore, the via hole 26 can be formed more easily by pressing using the punch 40 whose tip section has a corner.

Next, as illustrated in FIG. 4C, the pixel electrode 28 that is electrically connected to the drain electrode 16 through the via hole 26 is formed over the interlayer insulating layer 24. For example, the pixel electrode 28 is formed so as to fill the via hole 26. As a method of forming the pixel electrode 28, for example, a droplet discharge method is applied. When the pixel electrode 28 is formed by applying a droplet discharge method, the pixel electrode 28 is closed by applying a backing 39 such as a film to the lower surface of the substrate 12 to close the opening of the via hole 26.
This material may be prevented from flowing out to the lower surface side of the substrate 12.

Next, as shown in FIG. 2, the backing 39 is peeled off after the material of the pixel electrode 28 is dried.
Thus, the electro-optical device substrate 10 can be manufactured.

The via hole 34 may be formed so as not to penetrate the substrate 12. FIG. 7 is a diagram for explaining a modification of the pressing method using a combination of a punch and a die plate. For example, as shown in FIG. 7A, the die plate 54 does not have a recess on the support surface. The lower surface of the substrate 12 is supported by the die plate 54, and the substrate 12 is viewed from the upper surface side of the interlayer insulating layer 24 by the punch 40.
Press in the side direction. The interlayer insulating layer 24, the gate insulating layer 20, and the drain electrode 16 penetrate through the press, but the bottom surface of the substrate 12 is supported on the top surface of the die plate 54.
As shown in FIG. 7B, the substrate 12 does not penetrate. Thereby, the via hole 34 can be formed so as not to penetrate the substrate 12. At the bottom of the via hole 34, the interlayer insulating layer 2
4, the gate insulating layer 20, and the drain electrode 16 penetrate therethrough to form a pressed piece 35. Since the via hole 34 does not penetrate the substrate 12, the interlayer insulating layer 24
When the pixel electrode is formed thereon by applying a droplet discharge method, the pixel electrode material can be prevented from flowing out to the lower surface side of the substrate 12. Further, since the punch 40 does not directly contact the die plate 54, the service life of the punch 40 can be extended.

The via hole 36 may be formed so as not to penetrate the drain electrode 16. FIG.
These are figures explaining the modification of the press method by the combination of a punch and a die plate. For example, as shown in FIG. 8A, the die plate 56 has a recess 58 on the support surface. The lower surface of the substrate 12 is supported by the die plate 56 and pressed from the upper surface side of the interlayer insulating layer 24 to the substrate 12 side by the punch 40. By pressing, the interlayer insulating layer 24 and the gate insulating layer 20 penetrate, but the region on the recess 58 of the substrate 12 is recessed toward the recess 58 as shown in FIG. It is recessed toward the substrate 12 side. Thereby, the drain electrode 16 is formed on the substrate 1.
No escape through the escape side on the 2nd side. Therefore, the via hole 36 can be formed so as not to penetrate the drain electrode 16 and the substrate 12. At the bottom of the via hole 36, the interlayer insulating layer 24 and the gate insulating layer 20 are divided to form a pressed piece 37.

Next, modifications of the present embodiment other than the combination of punches and die plates will be described with reference to the drawings. FIG. 9 is a diagram for explaining a method of forming a ductile conductive material layer on the drain electrode. As shown in FIG. 9, a ductile conductive material layer 38 electrically connected to the drain electrode 16 is formed on the drain electrode 16, and a region overlapping the ductile conductive material layer 38 from the upper surface side of the interlayer insulating layer 24 is formed. The via hole 32 exposing the cross section of the ductile conductive material layer 38 and the cross section of the drain electrode 16 may be formed by pressing. The material of the ductile conductive material layer 38 is, for example, a paste-like member containing fine particles of metal or metal oxide. The material of the ductile conductive material layer 38 may be an organic adhesive containing carbon fine particles. As a method of forming the ductile conductive material layer 38, a droplet discharge method may be applied. Further, a printing method may be applied. Furthermore, a dispenser method may be applied. When the ductile conductive material layer 38 is formed on the drain electrode 16, the cross-sectional area of the conductive portion exposed in the via hole 32 can be further increased.
(Second Embodiment)
Next, a method for manufacturing the substrate for an electro-optical device according to the second embodiment of the invention will be described. The following description will focus on differences from the first embodiment, and description of common items will be omitted.

FIG. 10 is a schematic plan view showing an electro-optical device substrate according to a second embodiment of the present invention. 11 is a diagram showing a cross section taken along line XI-XI in FIG.

As shown in FIGS. 10 and 11, the electro-optical device substrate 60 according to the present embodiment includes a substrate 12 (see FIG. 11), a source electrode 14, a drain electrode 16, and an organic semiconductor layer as a semiconductor layer. 18, gate insulating layer 20 (see FIG. 11), gate electrode 22, and interlayer insulating layer 2
4, a groove 62 as an opening, and a pixel electrode 64. First, each component of the electro-optical device substrate 60 according to the present embodiment will be described.

The trench 62 penetrates at least the interlayer insulating layer 24 and the gate insulating layer 20, and the drain electrode 1
6 is formed so that a part of 6 is exposed. For example, the groove 62 is formed so as not to penetrate the drain electrode 16 and the substrate 12. The groove 62 may penetrate the drain electrode 16. Further, the groove 62 may penetrate the substrate 12. As shown in FIG. 10, the trench 62 is formed so as to be substantially parallel to the longitudinal direction of the gate electrode 22. The trench 62 is formed, for example, so as to connect a plurality of pixel electrodes 64 aligned in the longitudinal direction of the gate electrode 22.

As shown in FIG. 11, the pixel electrode 64 is disposed in a region overlapping the source electrode 14, the drain electrode 16, the organic semiconductor layer 18, and the gate electrode 22 on the interlayer insulating layer 24 through the groove 62. It is formed so as to be electrically connected to. For example, the pixel electrode 64 is formed so as to fill the groove 62 in the region of the pixel electrode 64.

Next, a method for manufacturing the electro-optical device substrate according to the present embodiment will be described with reference to the drawings. FIG. 12 is a diagram illustrating a method for manufacturing the electro-optical device substrate according to the second embodiment.

In the method of manufacturing the electro-optical device substrate 60 according to the present embodiment, first, as in the first embodiment, as shown in FIG. 3D, the source electrode 14 and the drain are formed on the substrate 12. Electrode 16
An organic semiconductor layer 18, a gate insulating layer 20, a gate electrode 22, an interlayer insulating layer 24,
Form.

Next, a trench 62 that penetrates at least the interlayer insulating layer 24 and the gate insulating layer 20 and exposes a part of the drain electrode 16 is formed by mechanical stress. In the present embodiment, the mechanical stress is scraping using a scraper 48, for example. Specifically, as shown in FIG. 12A, the scraper 48 is pressed from the upper surface side of the interlayer insulating layer 24 to a region overlapping the drain electrode 16. For example, the tip of the scraper 48 is pressed to a depth that reaches the upper surface of the drain electrode 16. Next, the scraper 48 is moved in the longitudinal direction of the gate electrode 22 (FIG. 10).
The interlayer insulating layer 24 and the gate insulating layer 20 are scraped off. Thus, as shown in FIG. 12B, the interlayer insulating layer 24 and the gate insulating layer 22
And a groove 62 in which a part of the drain electrode 16 is exposed is a longitudinal direction of the gate electrode 22 (
(See FIG. 10). The groove 62 may be formed so as to penetrate the drain electrode 16. Further, the groove 62 may be formed so as to penetrate the substrate 12. For example, as shown in FIG. 10, the trench 62 is formed so as to connect a plurality of pixel electrodes 64 arranged in the longitudinal direction of the gate electrode 22.

Next, as shown in FIG. 11, a pixel electrode 64 that is electrically connected to the drain electrode 16 through the groove 62 is formed on the interlayer insulating layer 24. Thus, the electro-optical device substrate 60 can be manufactured.

Note that a modification of the groove in the present embodiment will be described with reference to the drawings. FIG. 13 is a schematic plan view showing a modification of the electro-optical device substrate according to the second embodiment of the invention. As shown in FIG. 13, the electro-optical device substrate 61 according to the present exemplary embodiment includes a groove 66 formed independently for each pixel electrode 64 region. The groove 66 is formed by scraping the interlayer insulating layer 24 and the gate insulating layer 20 for each region of the pixel electrode 64 with the scraper 48.
(Method for manufacturing electro-optical device)
Next, a method for manufacturing an electro-optical device according to an embodiment of the invention will be described with reference to the drawings. Here, a method for manufacturing an electrophoretic display device as a method for manufacturing an electro-optical device will be described.

  FIG. 14 is a schematic cross-sectional view showing an electrophoretic display device according to an embodiment of the present invention.

As shown in FIG. 14, the electrophoretic display device 100 according to the present embodiment includes an electro-optical device substrate 10, an electrophoretic layer 70, and a counter substrate 80.

The electrophoretic layer 70 is sandwiched between the electro-optical device substrate 10 and the counter substrate 80.
The electrophoretic layer 70 includes microcapsules 72 and a binder material 74. Inside the microcapsule 72, an electrophoretic dispersion liquid 78 containing two types of electrophoretic particles 76 and electrophoretic particles 77 having different charges and colors is enclosed. The microcapsule 72 is fixed by a binder material 74.

The counter substrate 80 is disposed on the side facing the electro-optical device substrate 10 with the electrophoretic layer 70 interposed therebetween. The counter substrate 80 includes a substrate 82 and a common electrode 84. The substrate 82 is a transparent substrate. The material of the substrate 82 is, for example, glass or plastic. The common electrode 84 is formed on the surface of the substrate 82 facing the electro-optical device substrate 10.

Next, an example of a method for manufacturing an electrophoretic display device according to this embodiment will be described with reference to FIG.

In the manufacturing method of the electrophoretic display device 100 according to the present embodiment, first, the electro-optical device substrate 1 is manufactured.
0 is formed.

Next, after a layer made of a mixture of the microcapsules 72 and the binder material 74 is formed on the electro-optical device substrate 10, the binder material 74 is cured. As a result, the electrophoretic layer 70 including the microcapsules 72 and the binder material 74 is formed on the electro-optical device substrate 10.

  Next, a counter substrate 80 formed in a separate process from the electro-optical device substrate 10 is prepared.

Next, the counter substrate 80 and the common electrode 84 on the electrophoretic layer 70 are disposed on the electro-optical device substrate 10.
It is installed so as to oppose the side of the plate and bonded with an adhesive or the like. As described above, the electrophoretic display device 100 can be manufactured. In addition, what is necessary is just to apply a well-known method to the processing method which is not demonstrated at each above process.

The present invention is not limited to the above-described embodiments, and various modifications can be made.
For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

1 is a schematic plan view showing an electro-optical device substrate according to a first embodiment. FIG. It is a figure which shows the cross section in the II-II line | wire of FIG. It is a figure explaining the manufacturing method of the board | substrate for electro-optical devices which concerns on 1st Embodiment. It is a figure explaining the manufacturing method of the board | substrate for electro-optical devices which concerns on 1st Embodiment. It is a figure explaining the manufacturing method of the board | substrate for electro-optical devices which concerns on 1st Embodiment. It is a figure explaining the cross-sectional shape of the front-end | tip of the punch in the VI-VI line of FIG. It is a figure explaining the modification of the press method by the combination of a punch and die plate. It is a figure explaining the modification of the press method by the combination of a punch and die plate. It is a figure explaining the method of forming a ductile conductive material layer on a drain electrode. FIG. 6 is a schematic plan view showing an electro-optical device substrate according to a second embodiment. It is a figure which shows the cross section in the XI-XI line of FIG. It is a figure explaining the manufacturing method of the board | substrate for electro-optical devices which concerns on 2nd Embodiment. FIG. 10 is a schematic plan view showing a modification of the electro-optical device substrate according to the second embodiment. 1 is a schematic cross-sectional view showing an electrophoretic display device according to an embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Electro-optical device substrate 12 ... Substrate 14 ... Source electrode 16 ... Drain electrode 1
8 ... Organic semiconductor layer 20 ... Gate insulating layer 22 ... Gate electrode 24 ... Interlayer insulating layer 26 ...
Via hole 28 ... Pixel electrode 30 ... Organic transistor 32 ... Via hole 34 ... Via hole 35 ... Fragment 36 ... Via hole 37 ... Fragment 38 ... Ductile conductive material layer 39 ... Backing 40 ... Punch 42 ... Punch 44 ... Corner 46 ... Straight part 48 ... Scraper 50
... Die plate 52 ... Recess 54 ... Die plate 56 ... Die plate 58 ... Recess
60 ... Electro-optical device substrate 61 ... Electro-optical device substrate 62 ... Groove 64 ... Pixel electrode 6
6 ... groove 70 ... electrophoresis layer 72 ... microcapsule 74 ... binder material 76 ... electrophoretic particle 77 ... electrophoretic particle 78 ... electrophoretic dispersion liquid 80 ... counter substrate 82 ... substrate 8
4 ... Common electrode 100 ... Electrophoretic display device.

Claims (8)

Forming a source electrode, a drain electrode, and a semiconductor layer on a substrate;
Forming a gate insulating layer covering the source electrode, the drain electrode, and the semiconductor layer;
Forming a gate electrode on the gate insulating layer;
Forming an interlayer insulating layer covering the gate insulating layer and the gate electrode;
Forming an opening that penetrates at least the interlayer insulating layer and the gate insulating layer and exposes a part of the drain electrode by mechanical stress; and
Forming a pixel electrode electrically connected to the drain electrode through the opening on the interlayer insulating layer;
A method for manufacturing a substrate for an electro-optical device, comprising: In the manufacturing method of the substrate for electro-optical devices according to claim 1,
The method of manufacturing a substrate for an electro-optical device, wherein the mechanical stress is a press using a punch and a die plate. The method for manufacturing a substrate for an electro-optical device according to claim 2,
A method for manufacturing a substrate for an electro-optical device, wherein the tip of the punch is tapered so as to taper. In the method for manufacturing a substrate for an electro-optical device according to claim 2 or 3,
A method of manufacturing a substrate for an electro-optical device, wherein a cross section of a tip of the punch has a corner shape. In the manufacturing method of the substrate for electro-optical devices according to claim 1,
The method of manufacturing a substrate for an electro-optical device, wherein the mechanical stress is scraping using a scraper. In the manufacturing method of the substrate for electro-optical devices according to any one of claims 1 to 4,
The method of manufacturing a substrate for an electro-optical device, wherein the opening is formed so as not to penetrate the substrate. In the manufacturing method of the substrate for electro-optical devices according to claim 6,
The method of manufacturing a substrate for an electro-optical device, wherein the opening is formed so as not to penetrate the drain electrode. An electro-optical device manufacturing method comprising the electro-optical device substrate manufacturing method according to claim 1.

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