JP2007258634A5 - - Google Patents

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JP2007258634A5
JP2007258634A5 JP2006084543A JP2006084543A JP2007258634A5 JP 2007258634 A5 JP2007258634 A5 JP 2007258634A5 JP 2006084543 A JP2006084543 A JP 2006084543A JP 2006084543 A JP2006084543 A JP 2006084543A JP 2007258634 A5 JP2007258634 A5 JP 2007258634A5
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JP
Japan
Prior art keywords
film
sol
gel
ceramic
samples
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JP2006084543A
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Japanese (ja)
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JP5014656B2 (en
JP2007258634A (en
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Priority claimed from JP2006084543A external-priority patent/JP5014656B2/en
Priority to JP2006084543A priority Critical patent/JP5014656B2/en
Priority to US12/224,784 priority patent/US20090101070A1/en
Priority to CNA2007800109093A priority patent/CN101432461A/en
Priority to PCT/JP2007/053002 priority patent/WO2007111058A1/en
Priority to KR1020087025800A priority patent/KR101030937B1/en
Publication of JP2007258634A publication Critical patent/JP2007258634A/en
Publication of JP2007258634A5 publication Critical patent/JP2007258634A5/ja
Publication of JP5014656B2 publication Critical patent/JP5014656B2/en
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（５）前記セラミックス膜は、膜厚５μｍ以下の際に波長４００〜８００ｎｍの可視光領域で透過率８０％以上の透光性を有することを特徴とする態様（１）〜（４）のプラズマ処理装置用部材。 (5) The ceramic film according to any one of the aspects (1) to (4), wherein the ceramic film has translucency with a transmittance of 80% or more in a visible light region having a wavelength of 400 to 800 nm when the film thickness is 5 μm or less. A member for a plasma processing apparatus.

即ち、本発明においては、金属、セラミックス、ガラスの一般的に構造材として使用される材料を基材とし、その表面を２〜６族元素、１２〜１４族元素、希土類元素のうちの１つから形成される酸化物、もしくは前記元素２種以上から形成される複合酸化物からなるセラミックス膜でコーティングしたプラズマ処理装置用部材である。本手法では、ゾルゲル法を適用し、スプレー法、ディップ法等を用いて基材に塗布し、２５０℃以上の酸素含有雰囲気で熱処理することによって、酸化物セラミックスを得ることが可能である。 That is, in the present invention, metal, ceramics, a material generally used as a structural material for glass as a base material, the surface 2-6 group elements, 12 to 14 group elements, one of rare earth elements A member for a plasma processing apparatus coated with a ceramic film made of an oxide formed from or a composite oxide formed from two or more of the above elements. In this method, an oxide ceramic can be obtained by applying a sol-gel method, applying the sol-gel method to a substrate using a spray method, a dip method, or the like, and performing a heat treatment in an oxygen-containing atmosphere at 250 ° C. or higher.

これに対し、比較例である試料３１〜３４に関しては、Ｙ２Ｏ３ とＡｌ２Ｏ３ とで同様のエッチング速度であるものの、比較例である試料３５〜３７のＣＶＤ法で成膜した膜に関してはエッチング速度にバラツキが見られる。 On the other hand, regarding the samples 31 to 34 which are comparative examples, although the etching rates are the same for Y 2 O 3 and Al 2 O 3 , films formed by the CVD method of the samples 35 to 37 which are comparative examples As for, the etching rate varies.

実施例１〜１８において、２段以上の段差や箱形状の内面に対して容易に成膜可能であった。本発明の実施例である試料１９〜２９のゾルゲル膜と溶射膜との複合膜の成膜性は、成膜対象面に溶射膜が成膜可能であるか否かに依存する。このため、本評価では評価対象外とした。しかし、一部溶射膜を含む複雑な形状に対してゾルゲル膜を全面に成膜することは可能であった。 In Examples 1 to 18, it was possible to easily form a film on two or more steps or a box-shaped inner surface. Deposition of the composite film of the sol-gel film and the sprayed film samples 19 to 29 is an embodiment of the present invention is sprayed film on the deposition target surface that depend on whether it is possible deposition. For this reason, it was excluded from this evaluation. However, it has been possible to form a sol-gel film on the entire surface for a complicated shape including a partially sprayed film.

JP2006084543A 2006-03-27 2006-03-27 Plasma processing apparatus member and manufacturing method thereof Expired - Fee Related JP5014656B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006084543A JP5014656B2 (en) 2006-03-27 2006-03-27 Plasma processing apparatus member and manufacturing method thereof
KR1020087025800A KR101030937B1 (en) 2006-03-27 2007-02-20 Structural member for plasma treatment system and method for manufacture thereof
CNA2007800109093A CN101432461A (en) 2006-03-27 2007-02-20 Structural member for plasma treatment system and method for manufacture thereof
PCT/JP2007/053002 WO2007111058A1 (en) 2006-03-27 2007-02-20 Structural member for plasma treatment system and method for manufacture thereof
US12/224,784 US20090101070A1 (en) 2006-03-27 2007-02-20 Member for a Plasma Processing Apparatus and Method of Manufacturing the Same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006084543A JP5014656B2 (en) 2006-03-27 2006-03-27 Plasma processing apparatus member and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2007258634A JP2007258634A (en) 2007-10-04
JP2007258634A5 true JP2007258634A5 (en) 2009-03-26
JP5014656B2 JP5014656B2 (en) 2012-08-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006084543A Expired - Fee Related JP5014656B2 (en) 2006-03-27 2006-03-27 Plasma processing apparatus member and manufacturing method thereof

Country Status (5)

Country Link
US (1) US20090101070A1 (en)
JP (1) JP5014656B2 (en)
KR (1) KR101030937B1 (en)
CN (1) CN101432461A (en)
WO (1) WO2007111058A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5411460B2 (en) * 2008-06-24 2014-02-12 一般財団法人ファインセラミックスセンター Barrier performance evaluation method and barrier performance evaluation apparatus
FR2988404B1 (en) * 2012-03-21 2015-02-13 Centre Techn Ind Mecanique METHOD FOR DEPOSITING ANTI-CORROSION COATING
JP6120430B2 (en) * 2013-03-28 2017-04-26 オーエスジー株式会社 Hard coating for machining tools and hard coating coated metal working tools
KR101290539B1 (en) * 2013-04-15 2013-07-31 와이엠씨 주식회사 Method of anodizing film fabrication process
CN103639157B (en) * 2013-11-15 2016-06-08 广州福耀玻璃有限公司 The surface treatment method of glass adnexa
TW201546007A (en) * 2014-06-11 2015-12-16 Creating Nano Technologies Inc Method and apparatus for manufacturing glass structure
TWI709653B (en) * 2018-02-15 2020-11-11 日商京瓷股份有限公司 Component for plasma processing device and plasma processing device with same
DE112020000384T5 (en) * 2019-01-10 2021-09-23 Ngk Insulators, Ltd. Heat dissipation element
JP2020132947A (en) * 2019-02-20 2020-08-31 日本特殊陶業株式会社 Member with film and method for producing the same
KR20230005107A (en) 2021-06-28 2023-01-09 주식회사 히타치하이테크 How to regenerate inner wall members

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3527839B2 (en) * 1998-01-28 2004-05-17 京セラ株式会社 Components for semiconductor device manufacturing equipment
JP3510993B2 (en) * 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same
TW593196B (en) * 2001-11-01 2004-06-21 Toray Industries Photosensitive ceramics composition and multi-layer substrate using it
SG107103A1 (en) * 2002-05-24 2004-11-29 Ntu Ventures Private Ltd Process for producing nanocrystalline composites
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
TW200423195A (en) * 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
CN100418187C (en) * 2003-02-07 2008-09-10 东京毅力科创株式会社 Plasma processing device, annular element and plasma processing method
JP4486372B2 (en) * 2003-02-07 2010-06-23 東京エレクトロン株式会社 Plasma processing equipment
JP4603254B2 (en) * 2003-10-23 2010-12-22 日本曹達株式会社 Method for producing metal oxide sol liquid, crystalline metal double oxide sol and metal oxide film
JP2005217350A (en) * 2004-02-02 2005-08-11 Toto Ltd Member for semiconductor production system having plasma resistance and its production process
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance

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