JP2007258271A - Ion beam processing apparatus and operating method of ion beam processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ion beam processing apparatus capable of exactly processing a workpiece to be exposed by clarifying the details of an ion beams to be emitted, and to provide an operating method thereof. <P>SOLUTION: The processing apparatus has a beam generating section 3 for generating an ion beam; a probe 6 for measuring the number of ions in the ion beam; a first scanning means for allowing the probe to scan in one direction in a plane orthogonal to the ion beam; a second scanning means for allowing the probe to scan in a direction orthogonal to the one direction; and an operating means 2 for performing operation on the basis of a result of scanning and measurement by the probe. In the probe, all of end edges of a scanning side are configured of straight lines, and the operating means is configured so as to calculate the ion beam width of the one direction on at least an exposure surface of a workpiece W to be exposed and the distribution of the number of ion beams in the one direction. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an ion beam processing apparatus for irradiating a material to be exposed with an ion beam to form a desired microstructure on the material to be exposed.

  2. Description of the Related Art In recent years, a process called LIGA (Lithographie, Galvanoforming and Abforming) has been used for the production of molds used in microfabrication apparatuses such as nanoimprints. The LIGA process has an excellent feature that an aspect ratio (ratio of processing depth to processing width) can be increased (Non-Patent Documents 1 and 2).

  On the other hand, since the LIGA process uses a proximity X-ray mask to transfer a pattern to a resist layer (polymethyl methacrylate: PMMA), the proximity X-ray mask must be manufactured separately, and the cost for that must be estimated. There is a problem of not becoming. Further, the use of X-rays increases the equipment cost, and there is a problem that strict safety management is required during operation.

To solve these problems, a technique is disclosed in which a resist layer is directly exposed to a pattern by a light ion beam such as hydrogen ions, helium ions, or lithium ions without using a mask (Patent Document 1).
By the way, since the processing line width formed on the material to be exposed is related to the diameter of the ion beam, a technique for processing the material to be exposed by irradiating the material to be exposed with an ion beam, for example, a specific technique that has been attracting attention in recent years. In the method of performing ion implantation by irradiating a semiconductor with a heavy ion beam, it has been pointed out that it is important to obtain the ion beam diameter (range) and position in advance.

  In order to determine the diameter (range) of the ion beam in processing by this ion implantation, Faraday cups are linearly arranged at equal intervals, and moved across the entire surface of the exposed material, so that the ion intensity is obtained from each Faraday cup. A technique for measuring (Patent Document 2), a technique for causing a disk-shaped plate with beam passage holes formed in a matrix to cross the ion beam perpendicularly, and detecting the beam that has passed through the ion collector (Patent Document 3) And a technique (Patent Document 4) that detects the spread of an ion beam by arranging a plurality of conductive plates in one direction at equal intervals along a plane orthogonal to the traveling direction of the beam.

Even in the technology that directly exposes the pattern on the resist layer with hydrogen ions as described above, the processing line width formed on the exposed material does not depend on the beam diameter of the irradiation beam, and the processing line width is highly accurate. Therefore, it is necessary to confirm whether the ion beam is focused as desired.
Internet, http://www.ritsumei.ac.jp/se/~sugiyama/research/re_5.1.html Internet, http://staff.aist.go.jp/k.awazu/Japanese-folder/nanoimprint1021.htm Special table 2001-50369 gazette JP-A-9-320507 JP-A-10-223173 JP 2000-82432 A

  However, in the methods of measuring the diameter of the ion beam disclosed in Patent Documents 2 to 4, the number of Faraday cups, passage holes, or conductive plates that can be used for measurement is limited, and the number of measured beams Since the intensities are discrete ones each having a certain interval, the diameter of the ion beam estimated from the measurement results remains uneasy about its accuracy.

Further, although Patent Document 1 discloses a technique for directly exposing a pattern on a resist layer with a light ion beam, there is a special disclosure regarding a technique for measuring the diameter or range of an irradiated ion beam. It has not been.
On the other hand, in a processing apparatus that processes an exposed material by irradiating an ion beam, if the outline of the diameter or range of the irradiated ion beam can be known with high accuracy, the processing accuracy is improved and the processing efficiency is increased. It becomes possible to plan.

  The present invention has been made in view of the above-described problems. An ion beam processing apparatus and a processing capable of accurately and efficiently processing an exposed material by clarifying an outline of an ion beam irradiated on the exposed material. The object is to provide a method for operating the apparatus.

In order to achieve the above object, the present invention takes the following technical means.
That is, an ion beam processing apparatus according to the present invention is an ion beam processing apparatus that processes an object to be exposed by irradiating an ion beam, and a beam generator for generating an ion beam to be irradiated to the object to be exposed; A probe capable of measuring the number of ions or the representative value of the whole irradiated ion beam, a first scanning means for scanning the probe in one direction on a surface substantially orthogonal to the ion beam, Second scanning means for scanning the probe in the direction orthogonal to the one direction on the surface, and calculation based on the measurement result obtained by scanning the probe in the one direction and the direction orthogonal to the one direction. The probe has an edge on the side scanned in the one direction formed of a straight line orthogonal to the one direction and runs in a direction orthogonal to the one direction. And the calculation means includes at least the ion beam width in the one direction and the number of ions of the ion beam in the one direction on the exposure surface of the exposed material. It is comprised so that the distribution of may be calculated.

  Another ion beam processing apparatus according to the present invention is an ion beam processing apparatus that processes an exposed material by irradiating an ion beam, and a beam generation unit for generating an ion beam irradiated on the exposed material; A probe for measuring the number of ions of the irradiated ion beam or a representative value thereof, a sensor for measuring the number of ions of the whole irradiated ion beam or a representative value thereof, and the probe for the ion beam. Scanning means for causing the probe to scan in one direction on a surface substantially perpendicular to the ion beam, means for scanning or moving the probe in a direction perpendicular to the one direction on a surface substantially perpendicular to the ion beam, and the probe Calculating means based on the result measured by the sensor and the result measured by the sensor, the computing means at least of the exposed material It is configured to calculate the one direction or the number of ions of the distribution of any of the ion beam width and the ion beam in the direction perpendicular the one direction in the light plane formed by.

According to the above invention, since the ion beam irradiation range can be obtained with high accuracy and the outline of the ion beam can be clarified, the material to be exposed can be processed accurately and efficiently. .
Preferably, the calculation means is configured to obtain a center of the ion beam in one or both of the one direction and the direction orthogonal to the one direction.

According to the present invention, it is possible to accurately control the exposure position of an ion beam on a material to be exposed.
Preferably, in the probe, an end edge on a side scanning in the one direction extends in the one direction, and an end edge on a side scanned or moved in a direction orthogonal to the one direction or in a direction orthogonal to the one direction extends. Each of the straight lines or the end edges is constituted by the straight lines.

According to the present invention, the accuracy of specifying the measurement position of the number of ions in the ion beam or the representative value thereof can be further increased, and the outline of the ion beam can be accurately estimated.
An operation method of an ion beam processing apparatus according to the present invention is an operation method of an ion beam processing apparatus that processes an exposed material by irradiating an ion beam, from two straight lines orthogonal to a plane orthogonal to the ion beam. And a probe capable of measuring the number of ions of the whole ion beam or a representative value thereof is scanned in the linear direction of the one edge until the other edge reaches the outer periphery of the ion beam. The number of ions in the ion beam or a representative value thereof is measured, and the probe is scanned in the linear direction of the other edge until the one edge reaches the outer periphery of the ion beam, so that the number of ions in the ion beam or the ion beam A representative value is measured, and at least two orthogonal lines on the exposure surface of the exposed material are determined from the number of ions or the measurement result of the representative value. Shift or calculated ion distribution of the number of one linear direction of the ion beam width and the ion beam, performs operations based on the distribution of the ion beam width and the number of ions.

  Another method of operating an ion beam processing apparatus according to the present invention is an operation method of an ion beam processing apparatus that processes an object to be exposed by irradiating an ion beam, wherein the ion beam processing apparatus operates partially in a plane orthogonal to the ion beam. A probe for measuring the number of ions or a representative value thereof is scanned from the outside of the ion beam boundary on the orthogonal surface to the inside of the ion beam in one direction on the orthogonal surface until reaching the outside of the ion beam boundary. The measurement by the probe is performed, and the probe is scanned at a plurality of locations on the orthogonal plane, starting from one ion beam boundary outside in the direction orthogonal to the one direction and ending outside the other ion beam boundary. The number of ions of the entire ion beam or a representative value thereof is measured by a sensor, and the measurement result and the probe result are measured. An ion beam width and an ion number distribution in at least one direction or a direction orthogonal to the one direction are obtained from a measurement result by the sensor, and an operation is performed based on the ion beam width and the ion number distribution. I do.

According to these inventions, in addition to being able to accurately determine the irradiation range of the ion beam, it is possible to clarify the outline of the ion beam, so that the operation of the ion beam processing apparatus can be appropriately performed, The exposed material can be processed accurately and efficiently.
Preferably, the center of the ion beam is obtained from the measurement result of the probe, and the operation is performed based on the ion beam width, the distribution of the number of ions, and the center of the ion beam.

According to the present invention, it is possible to accurately control the exposure position of an ion beam on a material to be exposed.
Here, “the distribution of the number of ions of the ion beam in the one direction” means a distribution in the one direction with respect to the number of ions in a band-shaped region having a unit width in the one direction and sufficiently long in a direction orthogonal to the one direction. Means. Further, the “distribution of the number of ions” includes a distribution in other units that is widely proportional to the number of ions, for example, a distribution of current values as representative values detected by the probe.

  According to the present invention, there is provided an ion beam processing apparatus capable of clarifying an outline of an ion beam irradiated on a material to be exposed and capable of processing the material to be exposed accurately and efficiently, and a method for operating the processing apparatus. be able to.

FIG. 1 is a configuration diagram of an ion beam processing apparatus 1 according to the present invention, and FIG.
In the following description, the vertical direction in FIG. 1 is referred to as the Z direction.
In FIG. 1, an ion beam processing apparatus 1 includes an ion beam irradiation apparatus 3, an ion beam controller 4, an exposed material support stage 5, a current measurement probe 6 (6B, 6C), a Faraday cup 7, a computing unit 2, and a chamber 8. And a vacuum controller 9 and the like.

The ion beam irradiation apparatus 3 includes an ion source 10, an accelerator 11, a focusing device 12, and the like.
The ion source 10 generates proton ions by applying a voltage between a sharp metal tip and the surroundings in a hydrogen atmosphere. The ion source 10 is not limited to the above-described configuration itself, and various types such as an electron collision type, a high frequency discharge type, a duoplasmatron type, and a PIG type can be adopted.

The accelerator 11 includes a plurality of extraction electrodes 13 stacked, and performs the function of extracting and accelerating ions generated from the ion source 10 in a certain direction.
The focusing device 12 includes a magnifying lens 14, a deflector 15, and a focusing lens 16. The focusing device 12 is for energizing to form a predetermined electromagnetic field, focusing focused ions extracted from the ion source 10 and irradiating a predetermined position of the material W to be exposed. The magnifying lens 14 is formed of an electrostatic field generating plate or a magnetic field generating coil, and attracts proton ions passing through the center to expand in the radial direction. The deflector 15 is composed of two sets of parallel electrode plates that are shifted by 90 degrees from each other. By applying a DC voltage corresponding to a desired degree of beam deflection to each set of electrode plates, the axis of the ion beam is deflected. Move to deflect. The focusing lens 16 is formed of an electrostatic field generating plate or a magnetic field generating coil, and focuses proton ions passing through the central gap back to the beam center axis side.

The ion beam controller 4 adjusts the voltage applied to the focusing device 12 (magnifying lens 14, deflector 15, focusing lens 16) and controls the degree of focusing and irradiation position of the ion beam formed by the focusing device 12. To work.
The exposed material support stage 5 is for placing the exposed material W processed by the ion beam processing apparatus 1. The exposed material support stage 5 includes a small stage 17 on which the exposed material W is directly placed and a large stage 18 that supports the small stage 17. The small stage 17 freely moves in two orthogonal directions (hereinafter, these may be referred to as “X direction” and “Y direction”) on a plane orthogonal to the Z axis on the large stage 18 by a driving device (not shown). It is configured to be able to move in minute units. The large stage 18 is configured to be movable between a position where the material to be exposed W is exposed to the ion beam and a position where it is not exposed by a driving device (not shown).

  The current measuring probes 6, 6B, 6C are for measuring the electric charge of ions forming the ion beam as a current value, and are arranged with the detection surface 19 (19B, 19C) facing the ion beam irradiation device 3 side. ing. Further, in the current measuring probes 6, 6B, 6C, the detection surface 19 (19B, 19C) can scan the irradiation range of the ion beam in two orthogonal directions (X direction, Y direction) on a surface substantially orthogonal to the Z direction. The scanning in the two directions is performed by a driving device including a piezo element (not shown) that is connected to the current measurement probes 6, 6B, 6C and expands and contracts in directions orthogonal to each other. In the current measuring probes 6, 6B, 6C, the leading edge in the scanning direction on the detection surface 19 (19B, 19C) has a knife edge shape as shown in FIG. 1, and is based on the current measuring probes 6, 6B, 6C. Consideration is made so that the turbulence of the ion beam does not adversely affect the current measurement. Hereinafter, one of the scanning directions is referred to as an X direction, and the other direction orthogonal to the X direction is referred to as a Y direction.

  As shown in FIG. 1, the current measurement probes 6, 6 </ b> B, and 6 </ b> C have detection surfaces 19 (19 </ b> B and 19 </ b> C) that are substantially the same in the Z direction as the exposure surface of the material W to be exposed placed on the small stage 17. It is arranged to be in position. Further, the current measuring probes 6, 6B, 6C move the exposed material W or the exposed material when the large stage 18 is moved to the exposure position (right direction in FIG. 1) where the exposed material W is exposed to the ion beam. The entire current measurement probes 6, 6B, 6C are moved to the retracted position (left direction in FIG. 1) by a driving device (not shown) so as not to come into contact with the support stage 5. Signal lines for transmitting the measurement results of the current measuring probes 6, 6B, 6C are connected to the computing unit 2 described later.

  The Faraday cup 7 receives all the ions of the ion beam in a cross section orthogonal to the Z axis and outputs a current corresponding to the number of ions. The Faraday cup 7 moves between a position where the driving device 20 receives an ion beam (hereinafter, sometimes referred to as “light receiving position”) and a position where the ion beam is not received (hereinafter, sometimes referred to as “retreat position”). It is configured to be possible. A known Faraday cup 7 is used.

  Further, the ion beam processing apparatus 1 includes a probe position measuring device 31 (not shown in FIG. 1) for measuring the absolute positions of the current measuring probes 6, 6B, and 6C in the X direction and the Y direction, and an exposed material W. An exposed material position measuring device 32 (not shown in FIG. 1) for measuring the absolute position of the small stage 17 to be placed in the ion beam processing apparatus 1 in the X direction and the Y direction is provided. As the exposed material position measuring device 32 and the probe position measuring device 31, for example, one known distance meter using laser interference is provided for each of the X direction and the Y direction. The absolute position in the X direction of the material to be exposed W and the current measuring probe 6 may be measured with one measuring device, and the absolute position in the Y direction may be measured with one measuring device.

The computing unit 2 includes a probe scanning unit 21, a probe position detection unit 22, a current integration unit 23, a Faraday cup management unit 24, a stage drive unit 25, a beam outline calculation unit 26, an exposed material position detection unit 27, an exposure unit 28, The storage unit 29 and the control unit 30 are included.
The probe scanning unit 21 controls scanning of the current measurement probes 6, 6B, and 6C, and also measures a position for measuring the charge of the ion beam for the current measurement probes 6, 6B, and 6C (hereinafter referred to as “measurement position”). And the movement between the retreat position.

The probe position detection unit 22 receives the position information of the current measurement probes 6, 6 </ b> B, 6 </ b> C measured by the probe position measurement device 31, and the reference point of the current measurement probes 6, 6 </ b> B, 6 </ b> C (for example, the front edge of the detection surface 19). The absolute coordinates of the position) in the X and Y directions are calculated.
Hereinafter, the absolute coordinates in the X direction and the Y direction in the ion beam processing apparatus 1 are referred to as “X coordinates” and “Y coordinates”, respectively.

The current integration unit 23 sequentially integrates the current values measured by the current measurement probes 6, 6B, 6C being scanned in the X direction. Further, the current integrating unit 23 stores the current value and the integrated current value in association with the X coordinate and the Y coordinate where the reference points of the current measuring probes 6, 6 </ b> B, and 6 </ b> C are located at the time of measurement in the storage unit 29.
The Faraday cup management unit 24 controls the movement of the Faraday cup 7 between the position where the ion beam is received and the position where the ion beam is not received, receives the current value measured by the Faraday cup 7, and stores the current value in the storage unit 29. Remember me.

  The stage driving unit 25 controls a minute movement of the small stage 17 in the exposure process for processing the material to be exposed W, and a position at which the material to be exposed W is exposed to the ion beam with respect to the large stage 18 and a position at which the material is not exposed. To move between. In addition, the stage drive unit 25 manages the current measurement probes 6, 6 </ b> B, 6 </ b> C and the exposed material W or the large stage 18 so as not to contact with the probe scanning unit 21.

The beam outline calculation unit 26 calculates ions on the irradiation surface from current values and integrated current values measured by the current measurement probes 6, 6 </ b> B, and 6 </ b> C and associated with the X and Y coordinates, and a current value measured by the Faraday cup 7. The center position of the beam, the range of the ion beam, and the distribution of the number of ions are calculated.
The “irradiated surface” refers to the exposed portion of the surface of the material to be exposed W when the material to be exposed W is irradiated with the ion beam, and the “irradiated range” refers to the range of the irradiated surface. And

  The exposed material position detecting unit 27 receives the position information of the exposed material W measured by the exposed material position measuring device 32 and calculates the X coordinate and the Y coordinate of the portion serving as a reference of the exposed material W. The position of the material W to be exposed is actually the position of the reference point of the small stage 17. At the time of exposure processing, the position of the reference portion of the material to be exposed W is obtained from the known positional relationship between the material to be exposed W and the small stage 17 and used for the exposure unit 28.

The exposure unit 28 appropriately controls the driving device of the focusing device 12 and the small stage 17 according to the processing content of the material to be exposed W when processing the material to be exposed W by irradiating the ion beam.
The storage unit 29 corresponds to the current value and the integrated current value associated with the X coordinate and the Y coordinate, the current value measured by the Faraday cup 7, the ion number distribution of the ion beam, and the processing content of the material to be exposed W. The operating conditions and the like of the focusing device 12 are stored and called in response to a request from the control unit 30.

The control unit 30 controls the operation of all the elements constituting the computing unit 2 described above. Further, the control unit 30 sets the position of the current measuring probes 6, 6B, 6C, the position of the material to be exposed W, and the irradiation position when the ion beam is irradiated on one X and Y coordinate axes. Arrange and manage these absolute positions.
The computing unit 2 is realized by an external storage device such as a CPU (microcomputer), RAM, and hard disk, a control program, an interface having an A / D conversion function or a D / A conversion function, and the like.

  The chamber 8 is a pressure vessel that houses the ion beam irradiation device 3, the exposed material support stage 5, the current measurement probe 6 (6 </ b> B, 6 </ b> C), and the Faraday cup 7. A vacuum gauge 33 is attached to the chamber 8, and the vacuum is formed from the atmospheric pressure range by a vacuum device constituted by a rotary pump (not shown) for roughing and a turbo molecular pump (not shown) for vacuuming in the middle vacuum range. The internal pressure of the chamber 8 can be adjusted up to a range.

The vacuum controller 9 opens and closes the automatic valve 34 connected to the vacuum device or the automatic valve 35 for leaking based on the measurement value by the vacuum gauge 33, so that the chamber in the processing of the exposed material W by the ion beam is performed. Maintain the vacuum in 8 appropriately.
Next, calculation of the outline of the ion beam in the ion beam processing apparatus 1 will be described.

FIG. 3 is a flowchart of ion beam outline calculation and processing scanning in the ion beam processing apparatus 1, and FIG. 4 is a diagram showing the transition of the integrated current value when the current measuring probe 6 is scanned in the X direction.
Referring to FIG. 3, in the measurement of the current value of the ion beam performed by scanning current measurement probe 6, first, probe scanning unit 21 moves current measurement probe 6 to the retracted position (# 12), and then Faraday. The cup management unit 24 moves the Faraday cup 7 to the light receiving position (# 13).

The ion beam controller 4 excites the ion source 10 and energizes the magnifying lens 14, the deflector 15, and the focusing lens 16 to form a predetermined electromagnetic field, and irradiates the focused ion beam toward the Faraday cup 7. (# 14).
The Faraday cup management unit 24 receives the measured current value from the Faraday cup 7 according to the number of irradiated ions and stores it in the storage unit 29. The Faraday cup management unit 24 determines whether or not the received current value is equal to or greater than a predetermined value (# 15). For example, the current density of the ion beam in consideration of the predicted irradiation area of the exposed material W surface is 10 μA / If cm ² or more cannot be obtained (No in # 15), it is determined that the ion beam is not focused, and the ion beam irradiation is stopped (# 17). In such a case, the ion beam irradiation device 3 is inspected or the control value of the focusing device 12 in the ion beam controller 4 is changed.

  When the control unit 30 confirms that a predetermined current value is measured in the Faraday cup 7 (Yes in # 15), the Faraday cup management unit 24 moves the Faraday cup 7 to the retracted position, and the probe scanning unit 21 Controls the driving device to move the current measurement probe 6 to the measurement position (# 16). The reference point of the current measurement probe 6 after moving to the measurement position is located at the scanning origin P0 ((X0, Y0) in FIG. 4). The scanning origin P0 is preferably set at any position on the detection surface 19 of the current measurement probe 6 when the detection surface 19 is out of the ion beam irradiation range. For example, the scanning origin P0 is shown in FIG. As for P0, a position of X0 is selected further to the left side than the left end of the ion beam irradiation range, and a position of Y0 is selected further above the upper end.

Hereinafter, a reference point representing the absolute position of the current measuring probe 6 (hereinafter, “absolute position” may be simply referred to as “position”) will be described as the lower right end of the detection surface 19 in FIG. 4. The position of the reference point of the current measuring probe 6 is measured by the probe position measuring device 31 every time the current value is measured by the current measuring probe 6.
The current measuring probe 6 is scanned in the X direction while maintaining the Y coordinate of the reference point at Y0 (# 18). When the X coordinate of the reference point exceeds a certain value in scanning and the detected current value becomes small enough to be ignored, the current measuring probe 6 ends scanning in the X direction and is moved by a predetermined distance in the Y direction. (# 20). Here, as the “constant value”, a predicted radius of the ion beam or a value larger than that is adopted, and by providing such a limitation, before the current measurement probe 6 reaches the irradiation range of the ion beam. The movement in the Y direction is prevented. The X and Y coordinates when a significant current value is first detected in scanning in the X direction, and the X and Y coordinates when the current value becomes negligibly small in the subsequent scanning are stored in the storage unit 29. Is remembered. The scanning of the current measuring probe 6 in the X direction and the movement of the predetermined distance in the Y direction are performed until no significant current is detected in the entire scanning area even if the X direction is scanned (# 19).

The “significant current value” means not a noise but a current value at which it is determined that a current is clearly detected by the current measuring probe 6. The same applies to the “significant current value” below.
The current value detected by the current measuring probe 6 is integrated by the current integration unit 23 for each sampling, and the current value, the integrated current value, and the X coordinate and Y coordinate of the reference point at the time of measurement are stored in the storage unit 29. .

If no significant current is detected even after scanning in the X direction after moving the current measuring probe 6 in the Y direction (Yes in # 19), the measurement by the current measuring probe 6 is terminated.
Based on the current value and the accumulated current value stored in the storage unit 29 in association with the X coordinate and the Y coordinate, the beam summary calculation unit 26 determines the center of the ion beam on the irradiation surface of the material W to be exposed. The distribution of the position and the number of ions (hereinafter sometimes referred to as “ion beam overview”) is calculated (# 21).

While the ion beam irradiation apparatus 3 is in operation, the vacuum controller 9 controls the automatic valve connected to the vacuum apparatus and the automatic valve for leakage, and the inside of the chamber 8 is in a vacuum state (for example, 1 × 10 ^-5 Pa or less).
Next, calculation of the outline of the ion beam on the irradiation surface of the material to be exposed W will be described.
FIG. 4 shows the transition of the integrated current value when the current measuring probe 6 described above is measured by scanning in the X direction. FIG. 4 does not show an example of the integrated current value when the reference point of the current measuring probe 6 is larger than Y03, but changes according to the case of Y01 and Y02. The actual scanning of the current measuring probe 6 performed while measuring the current value is performed for more X coordinates at a finer interval in the Y direction than shown in FIG.

The center position of the ion beam is calculated as follows.
FIG. 5 shows the accumulated current value X based on the relationship between the X coordinate obtained by scanning the current measuring probe 6 in the X direction until no significant current value is detected and the accumulated current value (FIG. 4D). Is shown as a relationship with X. The approximate differential value is obtained by, for example, smoothing the relationship between the X coordinate and the integrated current value in the target data and its peripheral data with a cubic spline function, and then subtracting the obtained cubic function with respect to the minute X.

  Here, since the reference point of the current measurement probe 6 is the lower right end of the detection surface 19 in FIG. 4, the detection surface when the actual detected current value (number of ions) at each of the Y coordinates Y01 to Y03 is the largest. The X coordinate of the center position of 19 is an X coordinate obtained by subtracting one half of the X direction length w1 of the detection surface 19 from the maximum X coordinate of the differential value in FIG. The X coordinate Xm of the center position of the ion beam is obtained by calculating the average value of the X coordinate obtained by subtracting one half of w1 from the X coordinate having the largest differential value such as each of the Y coordinates Y01 to Y03 in FIG. Can be sought.

  FIG. 6 shows the integrated current values (A1 to A3, etc.) at the scanning end point (X = X04) in the X direction in FIG. 4D, using the Y coordinate at the time of measurement as a parameter. Also in the case of obtaining the center position of the ion beam with respect to the Y coordinate from FIG. 6, similarly to FIG. A value obtained by subtracting half of w2 is defined as a Y coordinate Ym of the center position of the ion beam.

The X-coordinate Xm and Y-coordinate Ym of the center of the ion beam are obtained by the beam outline calculation unit 26 by the method described above.
The ion beam irradiation range is stored in the storage unit 29 when the significant current value in scanning in the X direction is detected for the first time, and when the current value becomes negligibly small. The beam outline calculation unit 26 obtains the coordinates based on the coordinates and the Y coordinates. For example, the left end of the irradiation range in FIG. 4 indicates that ions are interpolated by an interpolation method or the like based on the relationship between each X coordinate when the significant current value in the X direction scan at each Y coordinate is detected for the first time and the Y coordinate at that time. It is obtained by calculating the X coordinate at the Y coordinate Ym of the center of the beam.

Next, the outline calculation of the distribution of the measured current value (number of ions) in the ion beam irradiation range will be described.
In the following description, it may be referred to as “measurement current value distribution” or “ion number distribution”, but the number of ions constituting the laser beam was measured by the Faraday cup 7. Since it is obtained by dividing the current value by the charge possessed by one proton ion, the above two expressions are appropriately selected according to the preceding and following descriptions without strictly distinguishing them.

First, summary calculation of the distribution of the number of ions in the Y direction will be described.
An outline of the distribution of the number of ions in the Y direction is calculated by the beam outline calculation unit 26 as follows from the result shown in FIG. 6 and the current value measured by the Faraday cup 7.
Here, “the distribution of the number of ions in the Y direction” means a band-like region having a unit width in the Y direction and extending in the X direction (for example, the region HIJK in FIG. The distribution of the number of ions irradiated when width = 1 (unit width).

  FIG. 6 shows the relationship between each Y coordinate and its final integrated current value when scanning in the X direction shown in FIG. Since the current value detected by the current measuring probe 6 is proportional to the number of ions irradiated on the detection surface 19, the shape of the distribution in FIG. 6 is similar to the distribution of the number of ions in the Y direction. . However, in the measurement by the current measuring probe 6, the detection surface 19 has an area of a certain size and sampling is performed at a predetermined interval in the X direction, so that the same X coordinate and Y in the ion beam irradiation range are obtained. There may be a portion in the illumination range where the sampling is done redundantly or not at all for the coordinate points. Therefore, the integrated current value in FIG. 6 is different from the current value representing the actual number of ions in principle.

Accordingly, correction is performed to obtain the distribution of the actual number of ions (corresponding current value) from the distribution of the final integrated current value shown in FIG.
The current value measured by the Faraday cup 7 is used for the correction.
That is, since the current value measured by the Faraday cup 7 is a value corresponding to the total number of ions forming the ion beam, the current value by the Faraday cup 7 is a value obtained by integrating the integrated current value of FIG. 6 (FIG. 6). 7 is corrected using the value divided by the area of the distribution (hereinafter referred to as “first correction coefficient”) (each integrated current value is multiplied by the first correction coefficient). The distribution of the integrated current value corresponding to the distribution of the number of ions in the ion beam irradiation range as shown in FIG. The integration in FIG. 6 is performed by the beam outline calculation unit 26 using the final integrated current values (A1 to A3, etc.) at the respective Y coordinates stored in the storage unit 29. A regression equation is obtained and interpolated to perform an approximate integration equivalent to diagram integration). In addition, the beam outline calculation unit 26 corrects the X coordinate and the Y coordinate of the reference point of the current measurement probe 6 to the X coordinate and the Y coordinate about the center of the detection surface 19 in the above processing. Specifically, the correction is performed by subtracting each X coordinate and Y coordinate by 1/2 of w1 and 1/2 of w2. By doing so, the distribution of the number of ions of the ion beam in the practical Y direction shown in FIG. 7A can be obtained. The relationship between the calculated Y coordinate and the number of ions (current value) is stored in the storage unit 29.

Next, the outline calculation of the distribution of the number of ions in the X direction will be described.
In principle, the calculation of the distribution of the number of ions in the X direction is performed in the same manner as the calculation of the distribution of the number of ions in the Y direction.
FIG. 8 is a diagram illustrating a distribution of current values in the Y direction using the X coordinate as a parameter. The distributions in the Y direction of the current values in FIGS. 8A to 8D are created by extracting current values having the same X coordinate from the current values stored in the storage unit 29. When current values having the same X coordinate cannot be extracted, X coordinate data that approximates the X coordinate is extracted, and the current value at the X coordinate to be compared with each Y coordinate is obtained by interpolation from the X coordinate and the current value. It is done. FIG. 8 can be said to represent a measured current value or an estimated current value when it is assumed from the data stored in the storage unit 29 that the current measurement probe 6 is scanned in the Y direction with a constant X coordinate. Integral current values B1 to B4, which are represented by FIGS. 8 (a) to 8 (d) and integrated with current value distributions at X coordinates X10 to X04, correspond to A1 to A3 in FIG. For example, B2 in FIG. 8B is the final integrated current value in the region LMNQ assuming scanning when the X coordinate is X12.

  FIG. 9 shows the integrated current value (for example, B2 of the region LMNQ when X = X12) in the region having the width of w2 in the X direction and extending in the Y direction using the X coordinate as a parameter. Since the current value detected by the current measuring probe 6 is proportional to the number of ions irradiated on the detection surface 19, the shape of the distribution in FIG. 9 is unit width in the X direction and sufficient in the Y direction. It is considered to be similar to the distribution in the X direction of the number of ions irradiated to the long strip region. Here, since the detection surface 19 of the current measurement probe 6 has an area of a certain size, the integrated current value in FIG. 9 includes the measured current values in the same X coordinate and Y coordinate overlappingly, or Coordinate points that are not sampled at all may be included. Therefore, as in the case of calculating the distribution of the number of ions in the Y direction from FIG. 6, the value obtained by further integrating the integrated current value of FIG. 9 with the current value by the Faraday cup 7 (the distribution area in FIG. )) (Hereinafter referred to as “second correction coefficient”) is used to correct each integrated current value in FIG. 9 (multiply by the second correction coefficient) to obtain the distribution of the number of ions in the X direction. calculate.

  The integration process of the integrated current value in FIG. 9 is calculated by approximate integration as in the case of FIG. The beam outline calculator 26 corrects the X coordinate and Y coordinate of the reference point of the current measurement probe 6 associated with each integrated current value to the X coordinate and Y coordinate of the center of the detection surface 19 in the above processing. To do. Specifically, the X coordinate and the Y coordinate for each current value stored in the storage unit 29 are corrected to values obtained by subtracting one half of w2 and one half of w1, respectively. This correction is the same as the calculation of the distribution of the number of ions in the Y direction described above. By the above processing, as shown in FIG. 7B, a distribution of integrated current values (current values in the entire Y direction in the unit width in the X direction) representing the distribution of the number of ions of the ion beam in the X direction is obtained. Can do. The relationship between the calculated X coordinate and the integrated current value at the X coordinate is stored in the storage unit 29.

  The outline of the distribution of the number of ions shown in FIG. 7 is extremely useful when setting processing conditions when processing the material to be exposed W by the ion beam processing apparatus 1. For example, consider a case where it is desired to obtain a processing line having a desired width Wp when processing the exposed material W by moving the ion beam relative to the exposed material W in the Y direction. The number of ions of the partial DEFG having a width Wp including the center in the ion beam irradiation range is obtained by the area of the hunted region In in FIG. 7B representing the distribution of the number of ions of the ion beam in the X direction. In other words, in the partial DEFG having the width Wp, the material to be exposed W is irradiated with the number of In ions per unit time. Since the dose amount Dq (number of ions per unit area) required for processing the material to be exposed W is determined by the type of the material to be exposed W, the material to be exposed is determined from the number of ions In and the required dose amount Dp. The ion beam irradiation time (Dp / In) necessary for processing the width Wp portion in W and not processing the other portions, that is, the relative movement speed of the ion beam and the material W to be exposed is obtained. When it is desired to move the ion beam relative to the material to be exposed W in the X direction to obtain a processed line having a desired width on the material to be exposed W, calculation is performed in the same manner as in FIG. Thus, the relative movement speed between the ion beam and the material to be exposed W can be obtained. Further, when it is desired to change the width Wp of the processing line in the material W to be exposed as appropriate during the irradiation of the ion beam, the ion beam is applied to the portion where the width Wp is to be increased based on FIGS. 7A and 7B. The relative movement speed between the center of the film and the material to be exposed W is slow, and the relative movement speed may be increased at a portion where the width Wp is desired to be reduced.

By clarifying the distribution of the number of ions in the ion beam, a processing line having a desired width Wp can be obtained even when the relative movement between the ion beam and the material to be exposed W is performed in a combination of the X direction and the Y direction. Can do.
Further, by storing the outline of the ion beam on the irradiation surface of the material to be exposed W in the storage unit 29 with respect to various ion beam irradiation intensities, it is possible to obtain a more complicated combination of machining lines. The beam processing apparatus 1 can be operated appropriately.

  The shape of the detection surface 19 of the current measuring probe 6 in FIGS. 4 and 8 is a rectangle illustrated in that the accuracy of the outline of the ion beam calculated by dividing the ion beam into a rectangular shape in the X and Y directions is good. However, it may be oval, oval or other shapes. For example, when the shape of the detection surface 19 is an ellipse, one of the long diameter and the short diameter may be w1, and the other is w2. Further, the sampling of the current value in the scanning of the current measuring probe 6 in the X direction is preferably performed at equal intervals with respect to the X coordinate, and the movement of the current measuring probe 6 in the Y direction is also performed at equal intervals. It is preferable to be carried out as follows.

  The current measuring probe 6 may be configured to be capable of sampling by scanning in both the X direction and the Y direction. In addition to the current measurement probe 6 that scans in the X direction, a current measurement probe that scans in the Y direction and can move in the X direction may be provided. In these cases, the outline of the distribution of the number of ions in the X direction can be calculated in the same manner as the above-described rough estimation of the distribution of the number of ions in the Y direction, based on the current value measured by scanning in the Y direction. it can.

  Next, a second embodiment for calculating the outline of the ion beam in the ion beam processing apparatus 1 will be described.

  FIG. 10 is a diagram showing the transition of the integrated current value when the current measuring probe 6 is scanned in the X direction. The current measuring probe 6B in the present embodiment has a rectangular shape in which the detection surface 19B is sufficiently longer than the diameter (width) of the ion beam irradiation range. The reference point of the current measurement probe 6B is the lower right corner of the detection surface 19B in FIG. The measurement of the current value performed by causing the current measurement probe 6B in the present embodiment to scan the ion beam irradiation range has many common points with those shown in the flowchart of FIG. Therefore, the difference between the present embodiment and the first embodiment in measuring the current value will be described below.

  In the second embodiment, the movement of the current measuring probe 6B in the Y direction is determined by the fact that the final integrated current value accumulated by the current integrating unit 23 after the scanning in the X direction is finished is the current measuring probe 6B in the Y direction. Is moved until no significant increase is recognized as compared with the final accumulated current value at the previous Y coordinate, that is, until the Y coordinate exceeds the lower boundary of the ion beam irradiation range in FIG. .

  When the final accumulated current value is no longer significantly increased compared to the final accumulated current value at the previous Y coordinate, the measurement by the current measuring probe 6B is terminated, and the storage unit is associated with the X coordinate and the Y coordinate. Based on the current value and the accumulated current value stored in 29, the beam outline calculation unit 26 calculates the center position of the ion beam and the distribution of the number of ions on the irradiation surface of the material to be exposed W.

The center position of the ion beam in the X direction is obtained from the relationship shown in FIG.
That is, the center position of the ion beam in the X direction is about the minute X of the accumulated current value from the relationship between the X coordinate and the accumulated current value in the last measurement of the current value by the current measuring probe 6B (FIG. 10D). The approximate differential value (slope) is calculated and obtained. Since the X coordinate Xw3 with the maximum differential value is the position where the reference point of the detection surface 19B exists when the differential value is maximum, the X coordinate at the center of the ion beam is the X coordinate with the maximum differential value. The X coordinate Xm is obtained by subtracting half of the X direction width w3 of the detection surface 19B from Xw3.

  The center position of the ion beam in the Y direction is the final integrated current value of the current value measured by the current measurement probe 6B at each Y direction position (the Y coordinate of the reference point is Y20 to Y25) (C1 to C4 and the like in FIG. 10). And the relationship between each Y coordinate (FIG. 11). The final integrated current values (C1 to C4, etc.) in FIG. 10 are obtained when the detection surface 19B of the current measurement probe 6B includes the center in the Y direction of the ion beam in scanning in the X direction at the front and rear Y coordinate positions. The largest increase / decrease with respect to the final integrated current value. Specifically, there is a Y-coordinate that has the largest increase / decrease with respect to the final integrated current value, between FIG. 10 (b) and FIG. 10 (c).

Therefore, if an approximate differential value (slope) for the minute Y is calculated from the relationship between the Y coordinate shown in FIG. 11 and the final integrated current value, and the Y coordinate that maximizes the differential value is obtained, that is the ion. This is the Y coordinate Ym of the center in the Y direction of the beam.
The X-coordinate Xm and the Y-coordinate Ym of the center of the ion beam are obtained by the beam outline calculation unit 26 and stored in the storage unit 29 by the method described above.

  As for the irradiation range of the ion beam, in the X direction, from the relationship between the X coordinate and the integrated current value in the last measurement of the current value with the current measurement probe 6B stored in the storage unit 29 (FIG. 10D), Based on the X and Y coordinates when a significant current value is detected for the first time in scanning in the X direction, and the X and Y coordinates when the current value is so small that it can be ignored, the beam outline calculation unit 26 obtains this. Are stored in the storage unit 29. The Y direction is obtained by extracting the Y coordinate whose approximate differential value is substantially 0 on the scanning origin side and the Y coordinate that is substantially 0 on the side away from the scanning origin in the relationship shown in FIG.

As for the outline of the distribution of the number of ions in the ion beam irradiation range, the distribution of the number of ions in the X direction will be described first.
The outline of the distribution of the number of ions in the X direction is as follows. The final integrated current value measured by scanning the current measuring probe 6B in the X direction does not increase even if the current measuring probe 6B is moved in the Y direction. It is calculated from the relationship between the coordinates and the current value (FIG. 12).

This relationship can also be obtained by obtaining an approximate differential value (difference value) for the minute X of the accumulated current value as a relationship with X from the X coordinate shown in FIG. 10D and the accumulated current value. it can.
The change in the current value in FIG. 12 is similar to the distribution of the number of ions in the X direction in the ion beam irradiation range. In the current measuring probe 6B, since the detection surface 19B has a certain size in the X direction, the detection surface 19B repeatedly samples the same X coordinate and Y coordinate during scanning in the X direction, or a portion of the portion that is not sampled. Since this may occur, the current value in FIG. 12 is corrected by the current value measured by the Faraday cup 7 to obtain the distribution of the number of ions (current value) in the X direction.

The correction is performed by dividing the current value of the Faraday cup 7 by the value obtained by integrating the current values in FIG. 12 (the integrated value in FIG. 12) (hereinafter referred to as “third correction coefficient”). By multiplying The distribution of the integrated current value in the X direction obtained is converted into a distribution of the number of ions by dividing by the charge of proton ions.
The actual distribution of the number of ions (the distribution of the number of ions in the band-shaped range extending in the Y direction with a unit width in the X direction) is shown in FIG. 12 in consideration of the position of the reference point of the current measuring probe 6B. The entire distribution is moved to the scanning origin side in the X direction by a half of w3.

  The outline of the distribution of the number of ions in the Y direction is calculated from the relationship between the Y coordinate and the integrated current value shown in FIG. FIG. 11 corresponds to FIG. 10D when obtaining the outline of the distribution of the number of ions in the X direction described above. Accordingly, the approximate differentiation of FIG. 11 with respect to Y is performed to obtain the relationship in the Y direction corresponding to FIG. An outline of the distribution (distribution of the number of ions in a band-like range extending in the X direction with a unit width in the Y direction) can be obtained. However, when the outline of the distribution of the number of ions in the Y direction is obtained, the detection surface 19B is sufficiently long in the Y direction, and thus correction in consideration of the position of the reference point of the current measurement probe 6B is not necessary.

The distribution of the number of ions in the X direction and the number of ions in the X direction described above are calculated by the beam outline calculation unit 26 and stored in the storage unit 29. Further, the effect of the outline of the obtained distribution of the number of ions is the same as that in the first embodiment.
Next, a third embodiment for calculating the outline of the ion beam in the ion beam processing apparatus 1 will be described.

  In the present embodiment, a current measuring probe 6C having a detection surface 19C having a rectangular shape and a sufficiently large size with respect to the ion beam irradiation range is used. The measurement of the current value performed by scanning the current measurement probe 6C in the present embodiment over the ion beam irradiation range has many common points with those shown in the flowchart of FIG. However, unlike the first and second embodiments, scanning of the current measuring probe 6C in the X direction and the Y direction is performed once each so as to finally cover the entire irradiation range of the ion beam.

FIG. 13 is a diagram showing an outline when the current measuring probe 6C is scanned in the X direction, and FIG. 14 is a diagram showing an outline when the current measuring probe 6C is scanned in the X direction.
The reference point of the current measuring probe 6C is the lower right end of the detection surface 19C in FIGS. 13A and 14A, that is, the leading edge of scanning in the X direction and scanning in the Y direction. It is the tip edge. Moreover, these front-end edges are all formed in the shape of a knife edge. The position of the reference point of the current measuring probe 6 </ b> C is measured each time the current value is measured by the probe position measuring device 31 and stored in the storage unit 29.

  The center position of the ion beam is obtained based on FIGS. 13B and 14B showing the relationship between the X coordinate or Y coordinate of the reference point and the measured current value. At the center position in the X direction, the increment of the measured current value due to the scanning of the unit distance (minute distance) in the X direction of the current measuring probe 6C is the largest, so the X coordinate stored in the storage unit 29 and the current value are From the relationship (FIG. 13 (b)), the X coordinate Xm indicating the maximum value is approximated (for example, the peripheral data is differentiated after smoothing with a cubic spline function) as the center position in the X direction. The Y coordinate Ym at the center in the Y direction is also obtained in the same manner as in the X direction from the relationship between the Y coordinate stored in the storage unit 29 and the current value (FIG. 14B).

The X coordinate Xm and Y coordinate Ym of the center of the ion beam are stored in the storage unit 29.
As for the irradiation range of the ion beam, in the X direction, when the current measurement probe 6C is scanned in the X direction, the X coordinate X30 when the first significant current value is measured and the measured current value are scanned. It is between the X coordinate X35 when it no longer increases by. Similarly, the irradiation range of the ion beam in the Y direction is such that when the current measuring probe 6C is scanned in the Y direction, the Y coordinate Y30 when the first significant current value is measured and the measured current value are It is between the Y coordinate Y35 when it does not increase even by scanning. The irradiation range of the ion beam is calculated by the beam outline calculation unit 26 based on the current value measurement data stored in the storage unit 29.

  The distribution of the number of ions in the X direction in the ion beam irradiation range (FIG. 13C) is obtained by differentiating the current value of FIG. Differentiation is performed by the approximate differentiation method as described above from the X coordinate stored in the storage unit 29 and the measured current value. In FIG. 13C, for example, the number Im of ions irradiated per unit time in the range URST of the width Wq in the direction including the center of the ion beam is equal to the width Wq corresponding to the range URST in FIG. It is obtained from the area of the part.

The distribution of the number of ions in the Y direction in the ion beam irradiation range can be obtained in the same manner as the distribution of the number of ions in the X direction. Also in the interpretation of FIG. 14C, FIG. Except for the fact that it is in the Y direction, it is the same as FIG. 13C.
The distribution of the number of ions in the X direction and the distribution of the number of ions in the X direction shown in FIGS. 13C and 14C are calculated by the beam outline calculation unit 26 and stored in the storage unit 29. The effect of the outline of the obtained distribution of the number of ions is the same as that in the first embodiment.

Now, returning to FIG. 3, after the center position of the ion beam, the ion beam range, the ion amount distribution, and the like on the irradiation surface of the material to be exposed W are clarified as in Examples 1 to 3 above, Processing is performed by irradiating the material to be exposed W with an ion beam (# 22).
In the processing operation (# 22), first, the current measuring probe 6 (6B, 6C) is retracted to the retracted position so as not to contact the Faraday cup 7, and instead, the Faraday cup 7 is moved to a position for receiving the ion beam.

  Next, the large stage 18 is moved by a driving device (not shown) to a position where the material to be exposed W placed on the small stage 17 is irradiated with the ion beam. Then, based on the position information of the center of the ion beam stored in the storage unit 29 of the computing unit 2, the small stage 17 is moved by a driving device (not shown), and the desired material W to be exposed placed on the small stage 17 is moved. Adjust so that the center of the ion beam hits the position.

When the adjustment of the position of the small stage 17 is finished, the Faraday cup 7 is retracted to a position where the ion beam is not received, and the material to be exposed W is processed by being irradiated with the ion beam. The exposure time (or the relative speed between the ion beam and the material W to be exposed) is determined by the exposure unit 28 based on the distribution of the number of ion beams (current value) stored in the storage unit 29.
In the above-described embodiment, the ion beam irradiation device 3, the ion beam controller 4, the exposed material support stage 5, the current measurement probes 6, 6B and 6C, the Faraday cup 7, the computing unit 2, the chamber 8, and the vacuum controller 9 are used. Etc. can use various things.

  In addition, each structure of the ion beam processing apparatus 1 and the ion beam processing apparatus 1 or the overall structure, shape, dimensions, number, material, and the like can be appropriately changed in accordance with the spirit of the present invention.

  The present invention can be used in an ion beam processing apparatus that irradiates a material to be exposed with an ion beam to form a desired microstructure on the material to be exposed.

It is a block diagram of the ion beam processing apparatus which concerns on this invention. It is a figure which shows the structure of a calculating unit. It is a flowchart of an outline calculation and processing of an ion beam in an ion beam processing apparatus. It is a figure which shows transition of an integrated electric current value when the current measurement probe in Example 1 is scanned to the X direction. 3 is a conceptual diagram for obtaining a beam center in the X direction in Embodiment 1. FIG. 3 is a conceptual diagram for obtaining a beam center in the Y direction in Embodiment 1. FIG. 3 is a conceptual diagram for obtaining a distribution of the number of ions in Example 1. FIG. It is a figure which shows transition of an electric current value when an electric current measurement probe is moved to a Y direction. 3 is a conceptual diagram for obtaining a distribution of the number of ions in the X direction in Example 1. FIG. It is a figure which shows transition of the integrated current value when the current measurement probe in Example 2 is scanned in the X direction. FIG. 10 is a conceptual diagram for obtaining a beam center in the Y direction in the second embodiment. FIG. 10 is a conceptual diagram for obtaining a beam center in the X direction in the second embodiment. FIG. 10 is a conceptual diagram for obtaining a distribution of the number of ions in the X direction in Example 3. 12 is a conceptual diagram for obtaining a distribution of the number of ions in the Y direction in Example 3. FIG.

Explanation of symbols

1 Ion beam processing device 2 Calculation means (calculator)
3 Beam generator (ion beam irradiation device)
6,6B, 6C probe (current measurement probe)
7 Sensor (Faraday Cup)
26 Calculation means (beam summary calculation unit)
Xm Center of ion beam (center of ion beam in X direction)
Ym Center of ion beam (center of ion beam in Y direction)
W Material to be exposed

Claims (7)

An ion beam processing apparatus that processes an exposed material by irradiating an ion beam,
A beam generating unit for generating an ion beam for irradiating the material to be exposed;
A probe capable of measuring the number of ions or the representative value of the whole irradiated ion beam;
First scanning means for causing the probe to scan in one direction on a surface substantially orthogonal to the ion beam;
Second scanning means for scanning the probe in a direction orthogonal to the one direction on the surface;
A calculation means for performing calculation based on a result of the probe scanning and measuring in the one direction and a direction orthogonal to the one direction;
The probe is
The edge on the side scanning in the one direction is composed of a straight line orthogonal to the one direction, and the edge on the side scanning in the direction orthogonal to the one direction is composed of a straight line extending in the one direction,
The computing means is
An ion beam processing apparatus configured to calculate at least the ion beam width in one direction and the distribution of the number of ions of the ion beam in the one direction on the exposure surface of the material to be exposed. An ion beam processing apparatus that processes an exposed material by irradiating an ion beam,
A beam generating unit for generating an ion beam for irradiating the material to be exposed;
A probe for measuring the number of ions of the irradiated ion beam or a representative value thereof;
A sensor for measuring the number of ions in the whole irradiated ion beam or a representative value thereof;
Scanning means for causing the probe to scan in one direction on a surface substantially orthogonal to the ion beam;
Means for scanning or moving the probe in a direction orthogonal to the one direction on a plane substantially orthogonal to the ion beam;
A calculation means for performing a calculation based on a result measured by the probe and a result measured by the sensor;
The computing means is
Ions configured to calculate at least an ion beam width in one direction or a direction orthogonal to the one direction on the exposure surface of the exposed material and a distribution of the number of ions of the ion beam. Beam processing equipment. 3. The ion beam processing apparatus according to claim 1, wherein the arithmetic unit is configured to obtain a center of the ion beam in both or one of the one direction and a direction orthogonal to the one direction. The probe is
Either the straight line that scans in one direction is a straight line perpendicular to the one direction, or the straight line that scans or moves in the direction perpendicular to the one direction extends in the one direction, or the edge The ion beam processing apparatus according to claim 2, wherein the ion beam machining apparatus is configured by each of the straight lines. An operation method of an ion beam processing apparatus that processes an exposed material by irradiating an ion beam,
A probe having an edge composed of two straight lines orthogonal to each other in a plane orthogonal to the ion beam and capable of measuring the number of ions of the entire ion beam or a representative value thereof in the linear direction of the one edge. Scan until the edge reaches the outer periphery of the ion beam to measure the number of ions of the ion beam or a representative value thereof,
The probe is scanned in the linear direction of the other edge until the one edge reaches the outer periphery of the ion beam, and the number of ions of the ion beam or a representative value thereof is measured.
From the measurement result of the number of ions or a representative value thereof, obtain at least the ion beam width in the linear direction of one of the two orthogonal lines on the exposure surface of the exposed material and the distribution of the number of ions of the ion beam,
An operation method for an ion beam processing apparatus, wherein the operation is performed based on the ion beam width and the distribution of the number of ions. An operation method of an ion beam processing apparatus that processes an exposed material by irradiating an ion beam,
A probe for measuring the number of partial ions in the plane orthogonal to the ion beam or a representative value thereof is arranged in one direction on the orthogonal plane from outside the ion beam boundary on the orthogonal plane. Scan until it reaches the outside of the ion beam boundary,
The measurement by the probe is performed by scanning the probe at a plurality of locations starting from the outside of the ion beam boundary in the direction orthogonal to the one direction on the orthogonal surface and starting from the outside of the other ion beam boundary.
The number of ions in the entire ion beam or a representative value thereof is measured by a sensor,
Obtaining a distribution of the ion beam width and the number of ions of the ion beam in at least one direction or a direction orthogonal to the one direction from the measurement result by the probe and the measurement result by the sensor;
An operation method for an ion beam processing apparatus, wherein the operation is performed based on the ion beam width and the distribution of the number of ions. 7. The ion beam processing according to claim 5, wherein a center of the ion beam is obtained from a measurement result of the probe, and an operation is performed based on the ion beam width, the distribution of the number of ions, and the center of the ion beam. How to operate the equipment.

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