JP2007250791A - Substrate processing apparatus, cleaning method thereof, and recording medium recording program thereon - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide optimum cleaning for each type of processing by doing cleaning according to types of processing. <P>SOLUTION: The cleaning in a process chamber which is executed after a substrate is carried in for a specified process comprises a setting information storing means which stores cleaning setting information which can be set for each type of processes executed in the process chamber. The type of process executed in the process chamber is discriminated when executing cleaning in the process chamber. The cleaning setting information corresponding to the type of discriminated process is acquired from the setting information storing means. Based on the acquired cleaning setting information, cleaning is executed according to the type of process. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a cleaning method for a substrate processing apparatus, a substrate processing apparatus, and a recording medium on which a program is recorded.

  For example, a substrate processing apparatus such as a plasma processing apparatus for manufacturing a semiconductor device includes a processing chamber, and a substrate such as a semiconductor wafer or a liquid crystal substrate is carried into the processing chamber and etching or film formation is performed on the substrate. It has come to give.

  In such a substrate processing apparatus, it is important to appropriately remove reaction products generated when processing a substrate in the processing chamber and particles (fine foreign particles) such as fine particles mixed from outside in the processing chamber. It becomes.

  For example, if particles remain on the mounting table of the substrate disposed in the processing chamber, the particles may adhere to the back surface of the substrate mounted on the mounting table, and the problem may increase in the next process. In addition, if particles remain in the processing chamber, they may adhere to the substrate and affect the processing of the substrate, and it is not possible to ensure the quality of the semiconductor device finally manufactured on the substrate. Will occur.

  As a method for effectively removing such particles in the processing chamber, for example, in Patent Document 1, a radical is generated in the processing chamber, and a chemical reaction occurs between the radical and a reaction product deposited on the mounting table. A cleaning method is described in which the reaction product is detached from the mounting table. Patent Document 2 discloses a cleaning method in which plasma is generated by changing the distance between electrodes in two stages to remove particles in the processing chamber. Such cleaning of the processing chamber is performed after carrying the substrate into the processing chamber and performing a predetermined process.

JP 2006-19626 A JP-A-8-176828

  By the way, there are cases where there are a plurality of types of predetermined processing performed in the processing chamber. For example, a process state in which etching is performed on a substrate, and a process chamber state that adjusts the process chamber state (chamber condition) such as the amount of reaction products adhering to the inner wall and the temperature in the process chamber before performing this process process. There is an adjustment process.

  However, if the processing chamber is cleaned under the same conditions (for example, recipe, timing, etc.) regardless of the predetermined processing type (type), over and under cleaning may occur. For example, depending on the type of processing, particles may be generated due to insufficient cleaning, or processing chamber conditions (for example, the amount of reaction products adhering to the inner wall and the temperature in the processing chamber) may not be optimized due to excessive cleaning, which may affect process processing. There are inconveniences such as giving. This may lead to quality deterioration of the semiconductor device manufactured on the substrate.

  In addition, depending on the type of processing performed in the processing chamber, cleaning may not be required every time. However, even in such processing, if cleaning is performed every time the processing is completed, a predetermined number of sheets can be obtained. It takes longer to complete the processing on the substrate, and the throughput decreases.

  Therefore, the present invention has been made in view of such problems, and an object of the present invention is to perform optimum cleaning for each processing type by performing cleaning according to the processing type. It is to provide a cleaning method for a substrate processing apparatus.

  In order to solve the above-described problem, according to one aspect of the present invention, there is provided a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined process. There is provided a cleaning method for a substrate processing apparatus, wherein the cleaning according to the type of processing is performed based on cleaning setting information preset for each type of processing performed in the processing chamber.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. The setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the room, and when performing the cleaning, the processing type is determined based on the cleaning setting information from the setting information storage means. And a control unit that executes the corresponding cleaning.

  According to the present invention, cleaning setting information (for example, cleaning recipe and cleaning timing) for each type of processing performed in the processing chamber is prepared. By setting these to optimum values, the processing type is set. It is possible to execute cleaning according to the conditions. Thereby, the state (chamber condition) in the processing chamber can be optimized, and the throughput can be improved.

  In order to solve the above-described problems, according to another aspect of the present invention, there is provided a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. The substrate processing apparatus is characterized in that, based on a cleaning recipe stored in advance in setting information storage means for each type of processing performed in the processing chamber, the cleaning is performed with a recipe corresponding to the processing type. A cleaning method is provided.

  According to the present invention, since a cleaning recipe is prepared for each type of processing performed in the processing chamber, it is possible to perform optimum cleaning according to the type of processing by adjusting each cleaning recipe. it can.

  The types of processing performed in the processing chamber include, for example, process processing performed by carrying a process processing substrate into the processing chamber, and adjustment substrate loaded into the processing chamber before performing the process processing. There is processing chamber state adjustment processing for adjusting the processing chamber state to a state suitable for the process processing. In this case, the setting information storage means stores a cleaning recipe separately for at least each type of processing.

  Such a cleaning recipe includes, for example, an execution time and a processing chamber temperature, and the cleaning execution time and / or processing chamber temperature performed after the processing chamber state adjustment processing depends on the processing chamber state required for the process processing. Is set. According to this, the optimal cleaning according to the state in the processing chamber can be executed.

  For example, the cleaning execution time when the process type is the process chamber state adjustment process is set to be longer than the cleaning execution time when the process type is the process process. According to this, since adjustment can be performed so that insufficient cleaning in the processing chamber state adjustment processing does not occur, the processing chamber state can be optimized.

  The cleaning chamber temperature when the processing type is the processing chamber state adjustment processing is set higher than the cleaning chamber temperature when the processing type is the process processing. According to this, even if the cleaning time is not lengthened, it can be adjusted so that insufficient cleaning in the processing chamber state adjustment processing does not occur.

  In order to solve the above-described problems, according to another aspect of the present invention, there is provided a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. The substrate processing apparatus is characterized in that the cleaning is performed at a timing according to the type of processing based on a cleaning timing stored in advance in a setting information storage unit for each type of processing performed in the processing chamber. A cleaning method is provided.

  According to the present invention, since cleaning timing is prepared for each type of processing performed in the processing chamber, cleaning is executed at an optimal timing according to the type of processing by adjusting each cleaning timing. be able to. As a result, the number of cleanings can be reduced, and the throughput can be improved.

  Further, the type of processing performed in the processing chamber is at least process processing performed by loading a process processing substrate into the processing chamber, and processing by loading an adjustment substrate into the processing chamber before performing the process processing. There is a processing room state adjustment process for adjusting the indoor state to a state suitable for the process processing. In this case, the setting information storage means stores the cleaning timing separately for at least each processing type.

  Such cleaning timing is set, for example, according to the number of processed substrates, and when the type of processing performed in the processing chamber is the processing chamber state adjustment processing, the processing chamber of the adjustment substrate corresponding to the set number of substrates is used. The cleaning is executed only every time the state adjustment process is completed. When the type of the process performed in the processing chamber is the process process, the process process of the process substrate corresponding to the set number of processes is completed. The cleaning may be executed only every time. As a result, cleaning can be executed at the optimum timing for each type of processing, and the number of cleanings can be reduced, so that throughput can be improved.

  In order to solve the above-described problems, according to another aspect of the present invention, there is provided a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. The cleaning is executed at a recipe and timing corresponding to the predetermined processing type based on a cleaning recipe and cleaning timing stored in advance in the setting information storage unit for each type of processing performed in the processing chamber. A method for cleaning a substrate processing apparatus is provided. According to this, by setting both the cleaning recipe and the cleaning timing according to the type of processing, cleaning can be executed with a more appropriate recipe and timing, so that the state in the processing chamber can be optimized. In addition, the throughput can be improved.

  In order to solve the above-described problems, according to another aspect of the present invention, there is provided a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. A setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber, and a step of determining a type of processing performed in the processing chamber; The substrate processing comprising: a step of acquiring cleaning setting information corresponding to the setting information from the setting information storage means; and a step of executing the cleaning according to the type of the processing based on the acquired cleaning setting information. An apparatus cleaning method is provided.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing. Setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the chamber, and when performing the cleaning, the type of processing performed in the processing chamber is determined, and the type of processing determined A substrate processing apparatus comprising: a control unit that acquires the cleaning setting information corresponding to the setting information from the setting information storage unit, and executes the cleaning according to the type of the processing based on the acquired cleaning setting information Is provided.

  In order to solve the above-described problem, according to another aspect of the present invention, a substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a substrate into a processing chamber and performing a predetermined processing is executed. The substrate processing apparatus includes setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber. A step of determining a type of processing performed in the processing chamber; a step of acquiring cleaning setting information corresponding to the determined type of processing from the setting information storage unit; and the predetermined setting based on the acquired cleaning setting information. A computer readable recording of a program for executing the step of executing the cleaning according to the type of processing Recording medium is provided.

  According to such an invention, the optimum cleaning according to the type of processing performed in the processing chamber can be executed, and thereby the state in the processing chamber (chamber condition) can be optimized. In addition, throughput can be improved.

  The cleaning according to the present invention may be performed by generating plasma in the processing chamber, or may be performed without generating plasma in the processing chamber. The cleaning according to the present invention may be performed with no substrate in the processing chamber, or may be performed with the substrate in the processing chamber.

  According to the present invention, it is possible to perform cleaning according to the type of processing, and therefore it is possible to perform optimal cleaning for each type of processing. As a result, the processing chamber can be kept in an optimal state, and the throughput can be improved.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(First embodiment)
First, a plasma processing apparatus 100 as a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a schematic configuration of the plasma processing apparatus 100. The plasma processing apparatus 100 is configured as an etching processing apparatus that performs an etching process on a semiconductor wafer (hereinafter referred to as “wafer”) W as a substrate to be processed. The plasma processing apparatus 100 has a cylindrical processing chamber (chamber) 110 made of metal (for example, aluminum or stainless steel), and a wafer W having a diameter of 300 mm, for example, is placed in the processing chamber 110. A columnar susceptor 111 is provided as a stage.

  Between the side wall of the processing chamber 110 and the susceptor 111, an exhaust path 112 is formed that functions as a flow path for discharging the gas above the susceptor 111 to the outside of the processing chamber 110. An annular baffle plate 113 is disposed in the middle of the exhaust passage 112. A space below the baffle plate 113 of the exhaust passage 112 is an automatic pressure control valve (hereinafter referred to as "APC (Adaptive)" which is a variable butterfly valve. Pressure control) ”) 114). The APC valve 114 is connected to a turbo molecular pump (hereinafter referred to as “TMP”) 115 that is an exhaust pump for evacuation, and further, via this TMP 115, a dry pump (hereinafter referred to as “DP”) that is an exhaust pump. ) 116. An exhaust passage (hereinafter referred to as “main exhaust line”) constituted by the APC valve 114, the TMP 115, and the DP 116 is for reducing the pressure in the processing chamber 110 until a high vacuum state is reached. The pressure in the processing chamber 110 is adjusted by the APC valve 114.

  The space below the baffle plate 113 in the exhaust passage 112 is also connected to an exhaust line (hereinafter referred to as “rough drawing line”) different from the main exhaust line. This roughing line is constituted by an exhaust pipe 117 having a valve V2 on the way and a DP 116. The gas in the processing chamber 110 is normally exhausted by this roughing line before the main exhaust line.

  A high frequency power source 118 is connected to the susceptor 111 as the lower electrode via a conducting wire 150, and a predetermined high frequency power is applied from the high frequency power source 118. The conducting wire 150 includes a matching unit 119 that reduces the reflection of high-frequency power from the susceptor 111 and maximizes the incidence efficiency of the high-frequency power on the susceptor 111, and a switch 151 that switches between conduction and disconnection of the conducting wire 150. It has been. The switch 151 is electrically located between the susceptor 111 and the high frequency power supply 118, and the electrical state of the susceptor 111 can be set to either a floating state or a conductive state. For example, when the wafer W is not placed on the upper surface of the susceptor 111, the switch 151 places the susceptor 111 in an electrically floating state.

  A disk-shaped electrode plate 120 made of a conductive film for electrostatically attracting the wafer W is provided above the susceptor 111. A DC power source 122 is electrically connected to the electrode plate 120. The wafer W is attracted and held on the upper surface of the susceptor 111 by a Coulomb force or a Johnson-Rahbek force generated according to a DC voltage applied to the electrode plate 120 from the DC power source 122. The annular focus ring 124 is made of silicon or the like, and converges the plasma generated above the susceptor 111 toward the wafer W.

  A refrigerant chamber 125 is arranged inside the susceptor 111. A refrigerant (for example, cooling water) having a predetermined temperature is circulated and supplied to the refrigerant chamber 125 via a pipe 126 from a chiller unit (not shown). The processing temperature of the wafer W placed on the susceptor 111 is controlled by the refrigerant chamber 125.

  A plurality of heat transfer gas supply holes 127 and heat transfer gas supply grooves (not shown) are arranged on a portion of the upper surface of the susceptor 111 where the wafer W is adsorbed (hereinafter referred to as “adsorption surface”). The heat transfer gas supply hole 127 and the heat transfer gas supply groove are provided via a heat transfer gas supply line 128 provided inside the susceptor 111 and a heat transfer gas supply pipe 129 having a valve V3 (see FIG. The heat transfer gas (for example, He gas) from here is supplied to the gap between the adsorption surface and the back surface of the wafer W. Thereby, the thermal conductivity between the wafer W and the susceptor 111 is improved. The amount of heat transfer gas supplied to the heat transfer gas supply hole 127 and the heat transfer gas supply groove is adjusted by a valve V3.

  The suction surface is provided with a plurality of pusher pins 130 as lift pins that can protrude from the upper surface of the susceptor 111. These pusher pins 130 move in the vertical direction in the figure when the rotational motion of a motor (not shown) is converted into linear motion by a ball screw or the like. The pusher pin 130 is accommodated in the susceptor 111 when the wafer W is attracted and held on the attracting surface. Projecting from the upper surface, the wafer W is lifted upward from the susceptor 111.

  An upper electrode 133 is disposed on the ceiling of the processing chamber 110. A high frequency power source 152 is connected to the upper electrode 133 and a predetermined high frequency power is applied.

  The upper electrode 133 also functions as a shower head for introducing gas into the processing chamber. The upper electrode 133 includes an electrode plate 135 having a large number of gas vent holes 134 and an electrode support 136 that detachably supports the electrode plate 135. A buffer chamber 137 is provided inside the electrode support 136, and a processing gas introduction pipe 138 extending from a processing gas supply unit (not shown) is connected to the buffer chamber 137. A valve V1 is provided in the middle of the processing gas introduction pipe 138, and the gas supply amount to the buffer chamber 137 is adjusted by the valve V1. Here, the distance (interelectrode distance) D between the susceptor 111 constituting the lower electrode and the upper electrode 133 is set to 35 ± 1 mm or more, for example.

  A gate valve 132 for opening and closing the loading / unloading port 131 for the wafer W is attached to the side wall of the processing chamber 110. When processing gas is supplied into the processing chamber 110 of the plasma processing apparatus 100 and high frequency power is applied to the upper electrode 133, high-density plasma is generated in the space S, and ions and radicals are generated.

  The plasma processing apparatus 100 is provided with a control unit 200 that controls the operation of the entire apparatus. The control unit 200 controls each unit based on predetermined setting information according to a predetermined program so as to perform predetermined processing in the processing chamber such as processing chamber state adjustment processing and process processing, cleaning of the processing chamber, and the like. It has become.

(Configuration example of control unit)
A specific configuration example of the control unit 200 will be described with reference to the drawings. As shown in FIG. 2, the control unit 200 includes a CPU (Central Processing Unit) 210 that constitutes the control unit main body, a ROM (Read Only Memory) 220 that stores data for controlling each unit, and the like. Random access memory (RAM) 230 provided with a memory area used for various data processing, display means 240 including a liquid crystal display for displaying an operation screen, a selection screen, etc., various data by the operator Input / output means 250 capable of performing input / output, etc., for example, an informing means 260 configured by an alarm device such as a buzzer, various controllers 270 for controlling each part of the substrate processing apparatus 100, and the substrate processing apparatus 100. Program data storage means 280 for storing program data to be processed, and program Comprising a setting information storage unit 290 for storing various setting information such as the recipe data to be used when performing processing based on the data. The program data storage means 280 and the setting information storage means 290 are constituted by recording media such as a flash memory, a hard disk, and a CD-ROM, for example, and data is read by the CPU 210 as necessary.

  These CPU 210, ROM 220, RAM 230, display means 240, input / output means 250, notification means 260, various controllers 270, program data storage means 280, and setting information storage means 290 are control buses, system buses, data buses, and the like. Are electrically connected by lines.

  The various controllers 270 also include controllers that control valves V1, V2, V3, APC valve 114, TMP 115, DP 116, high frequency power supplies 118, 152, DC power supply 122, switch 151, and the like.

  The program data storage unit 280 stores, for example, a wafer processing program in addition to the cleaning program 282. The setting information storage unit 290 includes, for example, cleaning setting information 292 including recipe data such as applied voltage when each part is controlled by the cleaning process, as well as the processing chamber pressure, gas flow rate, and high frequency when each part is controlled in the process process. Process processing setting information including recipe data such as electric power is stored. Details of the cleaning setting information 292 will be described later. The setting information storage unit 290 may store processing information including processing types for each wafer. The processing information of each wafer is used, for example, when determining the processing type of each wafer when cleaning the processing chamber.

(Specific examples of processing performed in the processing chamber)
Next, a specific example of a predetermined process performed in the processing chamber 110 in the plasma processing apparatus 100 according to the present embodiment will be described with reference to the drawings. That is, the plasma processing apparatus 100 carries a predetermined process by carrying a substrate into the processing chamber 110. As such a predetermined process, there are a plurality of types according to the stage of the process. As types of processing, for example, as shown in FIG. 3, there are processing chamber state adjustment processing (processing chamber state stabilization processing) 310 and etching processing 320 performed thereafter.

  In the processing chamber state adjustment process 310, for example, an adjustment substrate (dummy substrate) is carried into the processing chamber, and processing under substantially the same conditions (for example, recipe, timing, etc.) as the etching processing 320 is performed. This is performed for the purpose of adjusting the temperature and the amount of reaction products adhering to the inner wall of the processing chamber to make the processing chamber 110 suitable for the subsequent etching process 320. The processing chamber state adjustment processing 310 is continuously executed each time a plurality of (for example, three) adjustment wafers (hereinafter referred to as “dummy wafers”) are carried into the processing chamber 110.

  In the processing chamber state adjustment process 310, for example, the dummy wafer Wd is carried into the processing chamber 110 and the dummy wafer Wd is processed based on the adjustment recipe. This adjustment recipe is set to substantially the same content as the etching recipe used in the etching process 320, for example. Further, the dummy wafer Wd is, for example, similar to a wafer for process processing (hereinafter referred to as “process wafer”) Wp which is subjected to an etching process 320 and finally becomes a product. In this way, for example, three dummy wafers Wd are sequentially processed in succession, whereby the inside of the processing chamber 110 is adjusted to an optimum state for performing the subsequent etching process, and the inside of the processing chamber 110 can be stabilized.

  The etching process 320 is performed after the plurality of process chamber state adjustment processes 310 are performed. The etching process 320 is a process for performing etching on a process processing wafer in the processing chamber 110 based on a predetermined etching recipe. The etching process 320 is continuously performed each time a plurality of process processing wafers Wp (for example, 25 sheets per lot) are loaded into the processing chamber 110.

  In the etching process 320, for example, the gate valve 132 is first opened, and the process wafer Wp to be etched is loaded into the processing chamber 110 and placed on the susceptor 111. Here, a DC voltage is applied from the DC power source 122 to the electrode plate 120 to attract the process processing wafer Wp to the susceptor 111.

Next, a processing gas (for example, a mixed gas containing C ₄ F ₈ gas, O ₂ gas, and Ar gas) is introduced into the processing chamber 110 from the upper electrode 133 at a predetermined flow rate and flow rate ratio, and the APC valve 114 and the like. Is used to control the pressure in the processing chamber 110. Further, high frequency power is applied from the high frequency power supply 118 to the susceptor 111, and high frequency power is applied from the high frequency power supply 152 to the upper electrode 133. As a result, the processing gas discharged from the upper electrode 133 is turned into plasma in the space S. Radicals and ions generated by the plasma are focused on the surface of the process wafer Wp by the focus ring 124, and thereby the surface of the process wafer Wp is physically or chemically etched.

  When such an etching process is completed, the processed process wafer Wp is unloaded from the process chamber 110. Thus, the etching process 320 is continuously performed on one lot, for example, 25 process processing wafers Wp, and then a series of processes is completed.

  By the way, if the etching process 320 is continuously performed as described above, particles may be generated in the processing chamber 110. Further, in the processing chamber state adjustment processing 310, since the same processing as the etching processing 320 is continuously performed, there is a possibility that particles are generated in the processing chamber 110. For this reason, after such processing performed in the processing chamber, it is necessary to clean the processing chamber in order to remove particles.

  However, even in the process chamber state adjustment process 310, if cleaning of the process chamber 110 is performed under the same conditions as the etching process 320, for example, excessive or insufficient cleaning may occur. For example, when cleaning is insufficient, particles are generated, and when cleaning is excessive, the conditions in the processing chamber (for example, the amount of reaction products adhering to the inner wall and the temperature in the processing chamber) are not optimized. There are inconveniences such as affecting process processing. This may lead to deterioration of the quality of the semiconductor device manufactured on the product wafer.

  Therefore, the cleaning in the processing chamber according to the present invention can be performed according to the type of processing. According to this, since the optimum cleaning can be performed for each type of processing, it is possible to prevent excessive or insufficient cleaning. Thereby, the state in the processing chamber can be maintained in an optimum state.

(In-process cleaning)
Such cleaning in the processing chamber 110 according to the present embodiment will be described. In the plasma processing apparatus 100, the cleaning in the processing chamber 110 is controlled by the control unit 200 in the same manner as the processing chamber state adjustment processing 310 and the etching processing 320, and specifically, a program provided in the control unit 200. This is realized by executing the cleaning program 282 stored in the data storage means 280. At this time, the cleaning program 282 refers to the cleaning setting information 292 stored in the setting information storage unit 290.

  Here, the contents of the cleaning setting information 292 will be described with reference to FIG. The cleaning setting information 292 includes, for example, data managed by the cleaning recipe data table shown in FIG. 4A and the cleaning recipe assignment data table shown in FIG.

The cleaning recipe data table in FIG. 4A is configured so that at least the cleaning recipe A and the cleaning recipe B can be set. As the setting items of the cleaning recipe, for example, the processing chamber pressure (P _A , P _B ) , the electrode applied electric power _{(W A, W} B), the cleaning gas species _{(G A} gas, _{G B} gas), a cleaning gas flow rate _{(Q A, Q} B), cleaning time _{(t A, t} B), the processing chamber temperature ( T _A and T _B ) are prepared. Among these, the electrode applied power includes the upper electrode applied power and the lower electrode applied power, and the processing chamber temperature includes the upper electrode temperature, the lower electrode temperature, and the processing chamber wall temperature. Examples of cleaning recipe A and cleaning recipe B are given below.

[Cleaning recipe A]
Processing chamber pressure (P _A ): 100 mT
Upper electrode / lower electrode applied power (W _A ): 300 W / 0 W
Cleaning gas species _{(G A} Gas): _{O 2} Gas cleaning gas flow rate _(Q A): _800sccm
Cleaning time (t _A ): 40 sec
Upper electrode / lower electrode / processing chamber wall temperature (T _A ): 60 ° C./60° C./20° C.

[Cleaning recipe B]
Processing chamber pressure (P _B ): 100 mT
Upper electrode / lower electrode applied power (W _B ): 300 W / 0 W
Cleaning gas species _{(G B} Gas): _{O 2} Gas cleaning gas flow rate _(Q B): _800sccm
Cleaning time (t _B ): 20 sec
Upper electrode / lower electrode / processing chamber wall temperature (T _B ): 60 ° C./60° C./20° C.

  In the present embodiment, the difference between the cleaning recipe A and the cleaning recipe B is only the cleaning time, but more various data can be input to the cleaning recipe data table. It is also possible to register more recipes.

  The cleaning recipe assignment data table in FIG. 4B is configured so that a cleaning recipe can be set for each processing type shown in FIG. In this example, the cleaning recipe A is set in the processing chamber state adjustment process 310, and the cleaning recipe B is set in the etching process 320.

  The cleaning recipe data table in FIG. 4A and the cleaning recipe allocation data table in FIG. 4B are associated with each other using the cleaning recipe as a key. Therefore, by registering several possible cleaning recipes in the cleaning recipe data table in advance, it becomes easy to update the cleaning recipe allocation data table, that is, to change the allocation of cleaning recipes for various processes.

  The contents of the cleaning recipe data table and the cleaning recipe assignment data table can be updated by an operator's operation from, for example, the input / output means 250 (see FIG. 2) described above. It is also possible to update from a host device (not shown) connected to the control unit 200 via a network (not shown).

  Next, the processing of the plasma processing apparatus 100 when executing the cleaning of the processing chamber according to the first embodiment will be described with reference to the drawings. FIG. 5 is a block diagram showing processing performed by the plasma processing apparatus according to the present embodiment. Here, as the processing performed in the processing chamber, for example, after performing the processing chamber state adjustment processing 310 with the same etching recipe as the etching processing on the three dummy wafers Wd continuously, for example, one lot of 25 sheets An example in which the etching process 320 is continuously performed on the process wafer Wp will be described.

  Each time the processing of one wafer performed in the processing chamber is completed, the processing chamber is cleaned according to the type of the processing. Specifically, as shown in FIG. 5, every time the processing chamber state adjustment process 310 for one dummy wafer Wd is completed, the control unit 200 performs cleaning of the processing chamber 110 with the dummy wafer Wd being unloaded, for example. Then, each time processing for one process processing wafer Wp is completed, for example, the processing chamber 110 is cleaned while the process wafer Wp is unloaded.

  In FIG. 5, “SS” indicates the processing chamber state adjustment processing 310 per dummy wafer Wd, “E” indicates the etching processing 320 per processing wafer Wp, and “C” indicates the inside of the processing chamber 110. Shows cleaning. FIG. 5 shows a specific example in the case where the time for performing the processing chamber state adjustment process 310 is longer than the time for performing the etching process 320.

  A specific example of cleaning in the processing chamber in this case will be described with reference to the drawings. FIG. 6 is a flowchart showing a specific example of cleaning in the processing chamber according to the present embodiment, and FIG. 7 is a flowchart showing a specific example of cleaning execution contents shown in FIG.

  As shown in FIG. 6, first, in step S <b> 110, the control unit 200 determines the type of processing performed in the processing chamber 110. Specifically, for example, processing information including the processing type for each wafer is stored in advance in the setting information storage unit 290, and the processing type is determined based on the processing information. In addition to the above, the processing type may be determined by storing processing history information for each wafer in the setting information storage unit 290, for example, and determining based on the processing history information.

  Next, in step S120, the control unit 200 reads out the cleaning recipe assigned to the processing type determined in step S110 from the cleaning recipe assignment data table (see FIG. 4). In the present embodiment, the cleaning recipe A is read when it is determined that the process type is the processing chamber state adjustment process 310, and the cleaning recipe B is read when it is determined that the process type is the etching process 320. .

  Then, the control unit 200 controls the operation of the plasma processing apparatus 100 based on the cleaning recipe read out in step S120, and executes the cleaning of the processing chamber 110 in the processing after step S130.

  First, the control unit 200 performs a pre-execution check in step S130 prior to executing the cleaning of the processing chamber. This pre-execution check is to check whether the processing chamber 110 is in a state where cleaning can be normally executed.

  For example, when the process processing of the wafer W is being performed, when the wafer W exists in the processing chamber 110, when the wafer W is being unloaded from the processing chamber 110, or maintenance of the processing chamber 110 is performed. In such a case, the processing chamber 110 is not in a state where the cleaning can be normally executed. For example, during the introduction of the processing gas, the introduction of the back gas for adjusting the temperature of the wafer W, the control of the electrode plate 120 (electrostatic chuck) holding the wafer W by suction, and the control of the high-frequency power source, etc. It is determined that the wafer W is being processed. When the gate valve 132 of the processing chamber 110 is open, it is determined that the wafer W is being loaded / unloaded, and when the lid of the processing chamber 110 is opened, it is determined that maintenance is being performed. . This pre-execution check may be performed before determining the type of processing.

  When the control unit 200 determines that the state of the processing chamber 110 is not suitable for cleaning by the pre-execution check, for example, the control unit 200 ends cleaning with an error (not shown). On the other hand, when it is determined that the processing chamber 110 is in a state where the cleaning can be normally performed, the processing chamber is cleaned in step S200.

  Here, a specific example of the execution contents of the cleaning in step S200 will be described with reference to FIG. First, the control unit 200 controls the APC valve 114, the TMP 115, and the DP 116 in step S210 to adjust the pressure in the processing chamber 110 to 100 mT, the upper electrode 133 as the upper electrode, the susceptor 111 as the lower electrode, And each temperature of the inner wall of the processing chamber 110 is adjusted to 60 ° C., 60 ° C., and 20 ° C. Further, by switching the switch 151, the susceptor 111 is set in an electrically floating state. Similarly, the conduction between the electrode plate 120 and the DC power source 122 is cut off, and the electrode plate 120 is set in an electrically floating state.

Next, in step S < _b > 220, the control unit 200 supplies O ₂ gas as a cleaning gas from the upper electrode 133 to the space S in the processing chamber 110. The flow rate at this time is adjusted to 800 sccm (cm ³ / min, 1 atm, 0 ° C.) according to the cleaning recipe A or the cleaning recipe B.

  In step S230, high frequency power of 300 W is applied from the high frequency power supply 152 to the upper electrode 133 according to the cleaning recipe A or the cleaning recipe B here. As a result, plasma is generated from the cleaning gas in the vicinity of the upper electrode 133, and ions and radicals are generated.

  At this time, since the susceptor 111 is set in an electrically floating state, a large self-bias is not generated in the susceptor 111, and the ion pulling force to the susceptor 111 is alleviated. That is, the ions that have reached the upper surface of the susceptor 111 collide with the upper surface with a small kinetic energy, so that the upper surface of the susceptor 111 is not scraped by the ions.

  On the other hand, radicals that reach the upper surface of the susceptor 111 as in the case of ions come into contact with the reaction products deposited on the upper surface of the susceptor 111 and generate other volatile reaction products. The volatile reaction product is easily separated (volatilized) from the upper surface of the susceptor 111 and is discharged out of the processing chamber 110 via the main exhaust line and the roughing line. In this way, the upper surface of the susceptor 111 and other parts are cleaned, and the processing chamber 110 is cleaned.

In step S240, it is determined whether a predetermined time has elapsed. The predetermined time here is, for example, the cleaning time set in the cleaning recipe. If it is determined in step S240 that the predetermined time has elapsed, in step S250, the application of the high frequency power to the upper electrode 133 is stopped, and in step S260, O ₂ gas, which is a cleaning gas, enters the processing chamber 110. Stop supplying. Then, the switch 151 is switched to electrically connect the susceptor 111 and the high frequency power supply 118. Thus, when cleaning in the processing chamber is completed, if there is processing in the next processing chamber, that processing is executed.

  In such cleaning of the processing chamber according to the present embodiment, for example, after the processing chamber state adjustment processing 310 is performed, the cleaning recipe data table and the diagram shown in FIG. The cleaning recipe A is read based on the cleaning recipe assignment data table shown in 4 (b). As a result, as shown in FIG. 5, cleaning is substantially performed for 40 seconds every time after the processing chamber state adjustment process 310 using the dummy wafer W is performed.

  Further, after the etching process 320, the cleaning recipe B is read in step S120 based on the cleaning recipe data table shown in FIG. 4 (a) and the cleaning recipe assignment data table shown in FIG. 4 (b). As a result, as shown in FIG. 5, a cleaning of substantially 20 seconds is performed every time after one product wafer W is etched.

  As described above, according to the first embodiment, the cleaning setting information 292 (cleaning recipe) for each type of processing performed in the processing chamber 110 (processing chamber state adjustment processing 310 and etching processing 320) is prepared. By setting these to optimum values, cleaning according to the type of processing can be executed. Thereby, the state in the process chamber 110 can be made into an optimal state.

  In the processing chamber state adjustment processing 310, the required processing chamber state varies depending on the contents of the process processing. For this reason, it is preferable to set the cleaning time in the processing chamber state adjustment processing 310 according to the processing chamber state required for the process processing. For example, in this embodiment, the cleaning execution time (for example, 40 sec) in the case of the processing chamber state adjustment processing 310 is set to a time longer than the cleaning execution time (for example, 20 sec) in the case of the etching process 320 (process processing). ing. According to this, for example, it is possible to make adjustment so as not to cause insufficient cleaning in the processing chamber state adjustment processing 310 that takes longer than the etching processing, so that the state in the processing chamber 110 is optimized. Can do. Depending on the state of the processing chamber required for the process processing, the cleaning execution time in the processing chamber state adjustment processing 310 may be set shorter than the cleaning time in the process processing.

  In this embodiment, the case where only the cleaning time is different as in the cleaning recipe A and the cleaning recipe B has been described as an example, but other setting items such as the cleaning gas flow rate and the processing chamber temperature are changed. A cleaning recipe may be prepared. For example, if the cleaning chamber temperature in the case of the processing chamber state adjustment processing 310 is set to a temperature higher than the cleaning chamber temperature in the case of the etching process 320 (process processing), cleaning is performed as in the specific example of this embodiment. Even if the time is not lengthened, adjustment can be made so that insufficient cleaning in the processing chamber state adjustment processing 310 does not occur.

  Further, in this embodiment, for example, a cleaning recipe assignment data table as shown in FIG. 4B is provided. Therefore, if more cleaning recipes than the number of processes are prepared, a desired process type can be obtained. Since the cleaning recipe can be selected and assigned, the cleaning recipe can be set more easily. Note that the setting items of the cleaning recipes A and B are not limited to those described above, and can be increased or decreased.

(Second Embodiment)
Next, the plasma processing apparatus concerning 2nd Embodiment of this invention is demonstrated. Since the block diagram showing the configuration of the plasma processing apparatus according to the second embodiment is the same as that shown in FIG. 1, its detailed description is omitted. Although the case where the cleaning recipe can be changed for each type of processing performed in the processing chamber 110 has been described in the first embodiment, the cleaning timing can be further changed for each type of processing performed in the processing chamber 110 in the second embodiment. Will be described.

  Specifically, in the setting information storage unit 290 of the control unit 200 in the second embodiment, as the cleaning setting information 292, in addition to the cleaning recipe data table and the cleaning recipe assignment data table as shown in FIG. A cleaning timing data table as shown in FIG. This cleaning timing data table is setting information regarding at what timing cleaning is performed for each type of processing.

  Here, an example in which the cleaning timing is set by the number of wafers will be described. Specifically, the cleaning execution timing in the processing chamber state adjustment processing 310 is set based on the number of dummy wafers Wd. Further, the cleaning execution timing in the case of the etching process 320 is set based on the number of process processing wafers Wp. For example, according to the example of the cleaning timing data table shown in FIG. 8, in the case of the processing chamber state adjustment process 310, cleaning is performed every time one dummy wafer Wd is processed. Cleaning is performed every time two wafers Wp are processed.

(Specific examples of cleaning)
Next, cleaning of the processing chamber according to the second embodiment will be described with reference to the drawings. FIG. 9 is a block diagram showing processing performed by the plasma processing apparatus according to the present embodiment. Here, as the processing performed in the processing chamber, for example, after performing the processing chamber state adjustment processing 310 with the same etching recipe as the etching processing on the three dummy wafers Wd continuously, for example, one lot of 25 sheets An example in which the etching process 320 is continuously performed on the process wafer Wp will be described.

  Each time the processing of one wafer performed in the processing chamber is completed, the processing chamber is cleaned according to the type of the processing. Since the cleaning timing is set in the present embodiment, depending on the set cleaning timing, the cleaning may not be performed after the processing performed in the processing chamber.

  In FIG. 9, as in the case shown in FIG. 5, “SS” indicates the processing chamber state adjustment process 310 per dummy wafer Wd, and “E” indicates the etching process 320 per process wafer Wp. “C” indicates cleaning in the processing chamber 110.

  A specific example of cleaning in the processing chamber in this case will be described with reference to the drawings. FIG. 10 is a flowchart showing a specific example of cleaning in the processing chamber according to the present embodiment. As shown in FIG. 10, first, in step S <b> 310, the control unit 200 determines the type of processing performed in the processing chamber 110. Specifically, for example, the processing type is determined based on the processing information including the processing type for each wafer stored in advance in the setting information storage unit 290.

  Next, in step S320, the control unit 200 reads out the timing data assigned to the processing type determined in step S310 based on a cleaning timing data table as shown in FIG. In the present embodiment, when it is determined that the process type is the process chamber state adjustment process 310, the timing data (one sheet) is read, and when it is determined that the process type is the etching process 320, the timing data is read. Read (two).

  Next, it is determined whether or not the number read in step S330 is the number at the cleaning timing. Specifically, for example, the number of wafers is counted every time each process is completed, and the count value is temporarily stored in the RAM 230, for example. When the number of timing data read in step S320 is compared with the number of count values stored in the RAM 230, if it is determined that the number of cleaning timings has not been reached, cleaning of the processing chamber is performed. Do not exit.

  On the other hand, if it is determined in step S330 that the number of cleaning timings has been reached, the count value is set to 0, and the processing chamber is cleaned after step S340. That is, in step S340, for example, the cleaning recipe assigned to the processing type determined in step S310 is read from the cleaning recipe assignment data table shown in FIG. 4, and a pre-execution check is performed in step S350. In step S350, the same processing as in step S130 shown in FIG. 6 is performed, and thus detailed description thereof is omitted. This pre-execution check may be performed before determining the type of processing.

  If it is determined by the pre-execution check that the state of the processing chamber 110 is not suitable for cleaning, for example, cleaning is terminated with an error (not shown). On the other hand, when it is determined that the processing chamber 110 is in a state where the cleaning can be normally performed, the processing chamber 110 is cleaned according to the cleaning recipe in step S200. Thus, when cleaning in the processing chamber is completed, if there is processing in the next processing chamber, that processing is executed.

  In such cleaning of the processing chamber according to the present embodiment, for example, after the processing chamber state adjustment processing 310 is performed, the timing data “based on the cleaning timing data table shown in FIG. "One sheet" is read out, and at step S340, the cleaning recipe A is read out based on the cleaning recipe data table shown in FIG. 4A and the cleaning recipe assignment data table shown in FIG. 4B. As a result, as shown in FIG. 9, cleaning is substantially performed for 40 seconds every time after the processing chamber state adjustment processing 310 using the dummy wafer Wd is performed.

  In the case after the etching process 320, in step S320, the timing data “2 sheets” is read based on the cleaning timing data table shown in FIG. 8, and in step S340, the process shown in FIG. The cleaning recipe B is read based on the cleaning recipe data table shown and the cleaning recipe assignment data table shown in FIG. As a result, as shown in FIG. 9, cleaning is carried out for substantially 20 seconds each time the etching process for the two process processing wafers Wp is continuously performed.

  As described above, according to the second embodiment, the cleaning setting information 292 (cleaning recipe and cleaning timing) for each type of processing performed in the processing chamber 110 (processing chamber state adjustment processing 310 and etching processing 320) is prepared. Therefore, by setting these values to optimum values, it is possible to execute cleaning according to the type of processing. Thereby, the state (chamber condition) in the processing chamber 110 can be optimized, and the throughput can be improved.

  In the second embodiment, the case where the cleaning timing is set based on the number of dummy wafers Wd and the number of process processing wafers Wp is described as an example. However, the present invention is not necessarily limited to this, and based on the elapsed time. A cleaning timing may be set. Alternatively, the number of cleanings may be set for each type of process, and a predetermined number of cleanings may be performed at substantially equal time intervals in each process. Note that, for example, in a case where particles in the processing chamber 110 are considered to increase as the number of continuous process processes increases, cleaning is performed at long intervals at first, and cleaning is performed at gradually shorter intervals. You may do it.

  Further, the cleaning timing data may be data added to the processing information (including the processing type) for each wafer prior to processing in the processing chamber 110. This additional data is added to the processing information of the wafer based on, for example, a cleaning timing data table as shown in FIG.

  For example, in the case of a substrate processing apparatus that takes out wafers one by one from a wafer cassette containing a plurality of wafers and transports them to the processing chamber 110 and executes the processing of the wafers, each time the wafer is removed from the wafer cassette, Additional data may be added to the wafer processing information.

  Specifically, the number of wafers is counted each time a wafer is taken out from the wafer cassette, and the count value is temporarily stored in, for example, the RAM 230 for each processing type of each wafer. Then, if it is determined that the count value of the number of wafers has not reached the number of wafers at the cleaning timing as shown in FIG. 8, for example, additional data (no cleaning data) not to perform cleaning in the processing chamber is added. . If it is determined that the number of wafers at the cleaning timing has been reached, the count value is set to 0 and additional data (cleaning data) for cleaning the processing chamber is added.

  Here, FIG. 11 shows a specific example of cleaning in the processing chamber when the cleaning timing is determined based on the additional data added to the wafer processing information as described above. As shown in FIG. 11, the type of processing is determined in step S410, cleaning timing data is read in step S420, and it is determined whether or not cleaning is performed in step S430. Here, the processing type is determined based on the processing information (including the processing type) about the wafer, the additional data added to the processing information is read as cleaning timing data, and the processing is performed based on the additional data. Determine whether to clean the room.

  If the additional data is non-cleaning data that does not execute the cleaning of the processing chamber in step S430, the process ends without performing the cleaning of the processing chamber. On the other hand, in the case of data with cleaning that executes cleaning of the processing chamber in step S430, cleaning of the processing chamber is executed in step S440 and subsequent steps.

  That is, in step S440, for example, the cleaning recipe assigned to the processing type determined in step S410 is read from the cleaning recipe assignment data table shown in FIG. 4, and a pre-execution check is performed in step S450. In step S450, the same processing as that in step S130 shown in FIG. 6 is performed, and thus detailed description thereof is omitted. This pre-execution check may be performed before determining the type of processing.

  If it is determined by the pre-execution check that the state of the processing chamber 110 is not suitable for cleaning, for example, cleaning is terminated with an error (not shown). On the other hand, when it is determined that the processing chamber 110 is in a state where the cleaning can be normally performed, the processing chamber 110 is cleaned according to the cleaning recipe in step S200. Thus, when cleaning in the processing chamber is completed, if there is processing in the next processing chamber, that processing is executed.

  As described above, according to the cleaning of the processing chamber as shown in FIG. 11, it is possible to easily determine whether or not to execute the cleaning only with the additional data of the wafer processing information. In addition, it is not necessary to determine whether or not the cleaning timing has been reached each time cleaning of the processing chamber is performed, so that throughput can be improved.

  As a substrate processing apparatus to which the present invention is applied, a plurality of processing chambers may be provided, and wafers taken out from the wafer cassette may be sequentially transferred to the processing chambers for continuous processing. When the present invention is applied to such a substrate processing apparatus, cleaning may be executed for each processing chamber 110 according to the flowcharts shown in FIGS. 6, 10, and 11. Thereby, each processing chamber 110 can be cleaned at a desired timing according to the type of processing.

  Furthermore, when cleaning is performed for each processing chamber 110 according to the flowchart shown in FIG. 11, the number of wafers is set for each processing chamber before processing in each processing chamber, for example, when a wafer is taken out from a wafer cassette. Additional data for each processing chamber may be added to the processing information of the wafer based on the cleaning timing. Thereby, it is possible to easily determine whether or not the cleaning is executed in each processing chamber 110.

  In the first and second embodiments, the types of processing performed in the processing chamber include the processing chamber state adjustment processing in which the adjustment wafer Wd is carried into the processing chamber, and the processing wafer Wp in the processing chamber. However, for example, after the etching process of one lot (for example, 25 wafers) of the process wafers Wp is completed, the cleaning wafer Wc is loaded into the process chamber. When another cleaning process is performed, this cleaning process may be one of the types of processes.

  Such another cleaning process may be performed before or during the etching process for one lot (for example, 25 wafers) of process wafers Wp. When further cleaning of the processing chamber according to the present invention is performed after such other cleaning processing, the cleaning recipe data shown in FIGS. 4A and 4B and the cleaning timing data shown in FIG. 8 are added. Thus, the recipe and timing may be set separately from other processing types. It should be noted that the processing chamber according to the present invention can be cleaned as a substitute for other cleaning processing.

  The cleaning of the processing chamber in the first and second embodiments is a cleaning performed in a state where no wafer exists in the processing chamber 110 after the processing performed in the processing chamber is completed and the wafer is carried out (so-called waferless). However, the present invention is not necessarily limited to this. After the processing performed in the processing chamber 110 is completed and the wafer is unloaded, another cleaning wafer is placed in the processing chamber 110. The cleaning may be performed after the wafer is loaded and the cleaning wafer is present.

  The cleaning of the processing chamber in the first and second embodiments has been described with respect to the cleaning performed by generating plasma in the processing chamber. However, the present invention is not limited to this, and plasma is generated in the processing chamber. It may be cleaning performed without so-called (so-called plasma rescreening).

  In the cleaning performed by generating plasma, there is an electrostatic removal action of the electrode plate 120 by the generated plasma, so that it is not necessary to separately perform the electrostatic removal processing of the electrode plate 120. On the other hand, when plasma rescreening is performed, plasma is not generated, and thus it is necessary to separately perform electrostatic removal processing on the electrode plate 120.

  The present invention described in detail with reference to the first and second embodiments may be applied to a system composed of a plurality of devices or an apparatus composed of a single device. A medium such as a storage medium storing a software program for realizing the functions of the above-described embodiments is supplied to the system or apparatus, and the computer (or CPU or MPU) of the system or apparatus is stored in the medium such as the storage medium. The present invention can also be achieved by reading and executing the program.

  In this case, the program itself read from the medium such as a storage medium realizes the functions of the above-described embodiment, and the medium such as the storage medium storing the program constitutes the present invention. Examples of the medium such as a storage medium for supplying the program include a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, and a DVD-RAM. DVD-RW, DVD + RW, magnetic tape, nonvolatile memory card, ROM, and the like. It is also possible to provide a program downloaded to a medium via a network.

  Note that by executing the program read by the computer, not only the functions of the above-described embodiments are realized, but also an OS or the like running on the computer is part of the actual processing based on the instructions of the program. Alternatively, the case where the functions of the above-described embodiment are realized by performing all the processing and the processing is included in the present invention.

  Furthermore, after a program read from a medium such as a storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the function is determined based on the instructions of the program. The present invention also includes a case where the CPU or the like provided in the expansion board or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  For example, in the first and second embodiments, the case where the present invention is applied to a plasma processing apparatus that performs an etching process on a wafer has been described. However, the present invention is not necessarily limited to this and is not necessarily applied to a wafer. The present invention may be applied to a film forming apparatus that performs film processing, such as a plasma CVD apparatus, a sputtering apparatus, or a thermal oxidation apparatus. Further, the present invention can be applied to other substrate processing apparatuses such as FPD (Flat Panel Display) and photomask mask reticles and MEMS (micro electro mechanical system) manufacturing apparatuses other than wafers as substrates.

  The present invention is applicable to a substrate processing apparatus cleaning method, a substrate processing apparatus, and a recording medium on which a program is recorded.

It is sectional drawing which shows the structure of the plasma processing apparatus concerning 1st Embodiment of this invention. It is a block diagram which shows the structural example of the control part shown in FIG. It is a block diagram which shows the specific example of the process performed within the process chamber concerning the embodiment. It is a figure which shows the specific example of the cleaning setting information shown in FIG. It is a block diagram which shows the process of the plasma processing apparatus concerning the embodiment. It is a flowchart which shows the specific example of the cleaning concerning the embodiment. It is a flowchart which shows the specific example of the cleaning execution content shown in FIG. It is a figure which shows the specific example of the cleaning setting information shown in FIG. It is a block diagram which shows the process of the plasma processing apparatus concerning 2nd Embodiment of this invention. It is a flowchart which shows the specific example of the cleaning concerning the embodiment. It is a flowchart which shows the other specific example of the cleaning concerning the embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Plasma processing apparatus 110 Processing chamber 111 Susceptor 112 Exhaust path 113 Baffle plate 114 APC valve 115 TMP
116 DP
117 Exhaust pipe 118 High frequency power source 119 Matching device 120 Electrode plate 122 DC power source 124 Focus ring 125 Refrigerant chamber 126 Pipe 127 Heat transfer gas supply hole 128 Heat transfer gas supply line 129 Heat transfer gas supply pipe 130 Pusher pin 131 Carry-in / out port 132 Gate valve 133 Upper electrode 134 Gas vent hole 136 Electrode support 137 Buffer chamber 138 Processing gas introduction pipe 142 Upper electrode 144 Vacuum exhaust port 150 Conducting wire 151 Switch 152 High frequency power supply 200 Control unit 210 CPU
220 ROM
230 RAM
240 display means 250 input / output means 260 notification means 270 various controllers 280 program data storage means 282 cleaning program 290 setting information storage means 292 cleaning setting information 310 processing chamber state adjustment processing 320 etching processing W wafer Wd adjustment wafer (dummy wafer)
Wp Process processing wafer (product wafer)

Claims (15)

A substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a predetermined processing by carrying the substrate into the processing chamber,
A cleaning method for a substrate processing apparatus, comprising: performing the cleaning according to the type of processing based on cleaning setting information set in advance for each type of processing performed in the processing chamber. A substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a predetermined processing by carrying the substrate into the processing chamber,
Cleaning the substrate processing apparatus, wherein the cleaning is executed with a recipe corresponding to the type of processing based on a cleaning recipe stored in advance in setting information storage means for each type of processing performed in the processing chamber Method. The types of processing performed in the processing chamber are at least process processing performed by loading a process processing substrate into the processing chamber, and loading an adjustment substrate into the processing chamber before performing the process processing. The substrate processing apparatus cleaning method according to claim 2, further comprising: a processing chamber state adjustment process for adjusting the state to a state suitable for the process process. Each of the cleaning recipes includes at least an execution time and a processing chamber temperature,
The cleaning execution time and / or processing chamber temperature when the processing type is the processing chamber state adjustment processing is set according to the processing chamber state required for the process processing. Item 4. A method for cleaning a substrate processing apparatus according to Item 3. The cleaning execution time when the processing type is the processing chamber state adjustment processing is set to be longer than the cleaning execution time when the processing type is the process processing. The method for cleaning a substrate processing apparatus according to claim 4. The cleaning process chamber temperature when the process type is the process chamber state adjustment process is set to a temperature higher than the cleaning process chamber temperature when the process type is the process process. The method for cleaning a substrate processing apparatus according to claim 4. A substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a predetermined processing by carrying the substrate into the processing chamber,
Cleaning the substrate processing apparatus, wherein the cleaning is performed at a timing according to the type of processing based on a cleaning timing stored in advance in a setting information storage unit for each type of processing performed in the processing chamber. Method. The types of processing performed in the processing chamber are at least process processing performed by loading a process processing substrate into the processing chamber, and loading an adjustment substrate into the processing chamber before performing the process processing. There is a process room condition adjustment process for adjusting the condition of the process to a condition suitable for the process process,
8. The method of cleaning a substrate processing apparatus according to claim 7, wherein the setting information storage means stores cleaning timing separately for at least each processing type. Each of the cleaning timings is set according to the number of the substrates,
In the case of the process chamber state adjustment process, the cleaning is performed only every time the process chamber state adjustment process for the adjustment substrate corresponding to the set number of sheets is completed,
9. The cleaning of a substrate processing apparatus according to claim 8, wherein, in the case of the process processing, the cleaning is executed only every time the process processing of the process processing substrate corresponding to the set number of sheets is completed. Method. A substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a predetermined processing by carrying the substrate into the processing chamber,
The cleaning is executed at a recipe and timing corresponding to the predetermined processing type based on a cleaning recipe and cleaning timing stored in advance in a setting information storage unit for each type of processing performed in the processing chamber. A method for cleaning a substrate processing apparatus. A substrate processing apparatus cleaning method for cleaning a processing chamber after carrying a predetermined processing by carrying the substrate into the processing chamber,
Setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber;
Determining the type of processing performed in the processing chamber;
Acquiring cleaning setting information corresponding to the determined processing type from the setting information storage means;
A step of executing the cleaning according to the type of the processing based on the acquired cleaning setting information;
A cleaning method for a substrate processing apparatus, comprising: The method of cleaning a substrate processing apparatus according to claim 1, wherein the cleaning generates plasma in the processing chamber. A substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing,
Setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber;
A controller that performs the cleaning according to the type of the process based on the cleaning setting information acquired from the setting information storage means when performing the cleaning;
A substrate processing apparatus comprising: A substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing,
Setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber;
When performing the cleaning, the type of processing performed in the processing chamber is determined, cleaning setting information corresponding to the determined processing type is acquired from the setting information storage unit, and based on the acquired cleaning setting information, A control unit that executes the cleaning according to the type of the process;
A substrate processing apparatus comprising: A recording medium for recording a program for executing a cleaning method for a substrate processing apparatus for cleaning a processing chamber after carrying the substrate into the processing chamber and performing a predetermined processing,
The substrate processing apparatus includes setting information storage means for storing cleaning setting information that can be set for each type of processing performed in the processing chamber,
Computer
Determining the type of processing performed in the processing chamber;
Obtaining cleaning setting information corresponding to the determined processing type from the setting information storage means;
Executing the cleaning according to the predetermined processing type based on the acquired cleaning setting information;
The computer-readable recording medium which recorded the program for performing this.

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