JP2007250446A - Plasma device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma device which enlarges a region in which heat treatment can be carried out. <P>SOLUTION: The plasma device 1 is provided with: a pair of lengthy plate members 23, 24 to form a plasma generating space 21 between them; a pair of first electrodes 25, 26 electrically connected respectively to the pair of plate members 23, 24; a first power supply 29 to apply voltage between the first electrodes 25, 26; a pair of second electrodes 27, 28 electrically connected respectively on a more work 100 side than the first electrodes 25, 26 of the pair of plate members 23, 24; a second power supply 30 to apply voltage between the second electrodes 27, 28; a partitioning member 10a which is fixed to the plate members 23, 24 and partitions at least a region corresponding to the second electrodes 27, 28 out of the plasma forming space 21 into a plurality of small spaces along the longitudinal direction of the plate members 23, 24; and a gas supplying means 4 to supply a prescribed gas to the plasma forming space 21. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma apparatus for heat-treating a workpiece with plasma.

A plasma apparatus is known that generates thermal plasma by igniting a gas supplied into a discharge tube while applying an electric field by microwaves, and decomposes an organic halide by the thermal plasma (for example, (See Patent Document 1).
When such a plasma apparatus is applied to an apparatus that heat-treats the surface of a substrate (workpiece) that is an object to be processed, since the thermal plasma is generated in the discharge tube, the range in which the thermal plasma can be supplied is limited, and heating is performed. There exists a problem that the range which can process is narrow.

JP 2000-133494 A

  The objective of this invention is providing the plasma apparatus which can expand the area | region which can heat-process.

Such an object is achieved by the present invention described below.
The plasma apparatus of the present invention is a plasma apparatus that heat-treats a surface to be processed of the workpiece with plasma released from the plasma emission portion while relatively moving the plasma emission portion and the workpiece,
The plasma emission part is
It is made of a dielectric material, and is arranged in parallel to each other along a direction perpendicular to the moving direction of the workpiece with respect to the plasma emitting portion and perpendicular to the normal direction of the surface to be processed. A pair of long plate-like members to be formed;
A first energizing means comprising a pair of first electrodes electrically connected to the pair of plate-like members, respectively, and a first power source for applying a voltage between the first electrodes;
A pair of second electrodes electrically connected to the workpiece side from the first electrode of the pair of plate-like members, and a second power source for applying a voltage between the second electrodes; A second energization means comprising:
A partition member fixed to the plate-like member and partitioning a region corresponding to at least the second electrode in the plasma generation space into a plurality of small spaces along the longitudinal direction of the plate-like member;
Gas supply means for supplying a predetermined gas to the plasma generation space;
By applying a voltage between the pair of plate members while supplying the gas to the plasma generation space, the gas in the plasma generation space is activated to generate plasma, and the plasma is applied to the workpiece. It is comprised so that it may discharge | release toward.
Thereby, the area | region which can perform heat processing can be expanded. Further, regardless of the length of the pair of plate-like members, the heat treatment for the workpiece can be performed uniformly and stably.

In the plasma apparatus of the present invention, it is preferable that the partition member is further provided in a region corresponding to the first electrode in the plasma generation space.
Thereby, the heat processing with respect to a workpiece | work can be performed more uniformly and stably.
In the plasma apparatus of the present invention, it is preferable that the partition member has a function as a spacer for maintaining a distance between the pair of plate-like members.
Thereby, deformation such as warpage of the plate-like member can be prevented, plasma can be generated reliably and stably, and an appropriate heat treatment can be performed on the workpiece.

In the plasma device of the present invention, it is preferable that the partition member has a function of controlling a flow of gas flowing through the plasma generation space.
Thereby, the uniform heat processing of a workpiece | work is attained.
In the plasma apparatus of the present invention, it is preferable that a plurality of the partition members are arranged at predetermined intervals along the longitudinal direction of the plate-like member.
Thereby, a more uniform heat treatment of the work can be performed.

In the plasma apparatus of the present invention, it is preferable that the partition member has a plate shape, and the end portion on the workpiece side has a shape that gradually decreases toward the workpiece.
As a result, the plasma smoothly wraps around the area directly below the partition member, and the workpiece can be uniformly heat-treated along the longitudinal direction of the plate member.
In the plasma apparatus of the present invention, it is preferable that the edge of the plate-like member is located closer to the workpiece than the end of the partition member on the workpiece.
Thereby, the plasma generated in the plasma generation space can be emitted more uniformly.

In the plasma apparatus of the present invention, the gas in the plasma generation space is supplied by applying a voltage between the pair of plate-like members by the first energizing means while supplying the gas to the plasma generation space. To generate plasma and to apply a voltage between the pair of plate-like members by the second energizing means to adjust the temperature of the generated plasma to a target temperature, It is preferable that the plasma adjusted to be discharged toward the workpiece.
Thereby, a power supply output can be restrained small.

In the plasma apparatus of the present invention, an area in a cross section passing through the pair of first electrodes in the plasma generation space is A [mm ² ], and passes through the pair of second electrodes in the plasma generation space. When the area in the cross section is B [mm ² ], it is preferable that A <B.
As a result, it is possible to expand the region where the workpiece can be heat-treated while suppressing the power output required for generating the plasma to be small.
In the plasma apparatus of the present invention, A is preferably 0.05B to 0.8B.
As a result, the power output required for generating plasma can be suppressed to a sufficiently small level while expanding the heating region on the surface to be processed of the workpiece.

In the plasma apparatus of the present invention, the distance between the plate-like members is substantially constant,
In the pair of plate-like members, it is preferable that a length in a longitudinal direction in a portion where the first electrode is provided is smaller than a length in a longitudinal direction in a portion where the second electrode is provided.
As a result, since the plate-shaped members having substantially the same shape are used and these plate members may be arranged substantially in parallel, the configuration of the apparatus and its manufacture can be easily performed. Further, since the plasma flow path in the plasma generation space has a simple shape, it is possible to prevent turbulent flow and the like from being generated in the plasma, and to move quickly and uniformly toward the workpiece side. As a result, plasma can be uniformly supplied to the workpiece.

In the plasma apparatus of the present invention, it is preferable that the power density of the first electrode is larger than the power density of the second electrode.
As a result, more reliable and sufficient plasma can be generated, and the temperature of the plasma can be easily and reliably adjusted to the target temperature.
In the plasma apparatus of the present invention, when the power density at the first electrode is X [W / mm ² ] and the power density at the second electrode is Y [W / mm ² ], X / Y is 1 It is preferably 1 or more.
This makes it easier to adjust the temperature of the plasma while enabling more reliable and sufficient plasma generation.

In the plasma device of the present invention, the frequency of the power supplied from the first power source to the first electrode is substantially equal to the frequency of the power supplied from the second power source to the second electrode, or It is preferable that the frequency of the electric power supplied from the second power source to the second electrode is larger.
As a result, more reliable and sufficient plasma can be generated, and the temperature of the plasma can be easily and reliably adjusted to the target temperature.

In the plasma apparatus of the present invention, it is preferable that the gas contains an inert gas as a main component.
By using the plasma of the inert gas, the heat treatment can be performed while preventing inconveniences such as modification of the surface to be processed of the workpiece.
In the plasma apparatus of the present invention, the gas preferably contains nitrogen gas.
Thereby, plasma (thermal plasma) can be generated more reliably.

In the plasma apparatus of the present invention, the nitrogen gas content in the gas is preferably 10 vol% or less at normal pressure.
Thereby, it is possible to generate plasma more quickly (efficiently) while preventing inconveniences such as reforming the surface to be processed of the workpiece.
In the plasma apparatus of the present invention, it is preferable to have a moving means for relatively moving the plasma emitting part and the workpiece.
Thereby, a workpiece | work can be processed uniformly and efficiently, and it contributes to the improvement of productivity.

In the plasma apparatus of the present invention, it is preferable that the moving means has a function of adjusting a relative moving speed between the plasma emitting unit and the workpiece.
Thereby, the degree (density) of the plasma processing can be adjusted, and the overall processing time (processing amount per unit time) can be adjusted, so that the processing for the workpiece can be optimized.

Hereinafter, the plasma apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<First Embodiment>
First, a first embodiment of the plasma device of the present invention will be described.
FIG. 1 is a partial cross-sectional perspective view showing a first embodiment of the plasma device of the present invention, FIG. 2 is a vertical cross-sectional view schematically showing a plasma emission portion provided in the plasma device shown in FIG. 1, and FIG. 2 is a cross-sectional view taken along line AA (a), a cross-sectional view taken along line BB (b), and FIG. 4 are diagrams (longitudinal cross-sectional views) schematically showing the gas flow in the plasma emission section shown in FIG. is there.

In FIG. 1, some members provided in the plasma emission part are omitted. In the following description, the upper side in FIGS. 1, 2 and 4 is referred to as “upper” and the lower side is referred to as “lower”.
For example, the plasma apparatus 1 shown in FIG. 1 generates (generates) plasma, adjusts the plasma to a target temperature, and then uses the plasma to process a surface to be processed (for example, a substrate) 100 (a substrate to be processed). (Surface) 101 is a device for heat treatment.

The plasma apparatus 1 includes a plasma emitting unit 2 positioned above the workpiece 100 (on the processing target surface 101 side), a table (movable table) 3 that is positioned below the workpiece 100 and on which the workpiece 100 is placed, and the workpiece 100. As a moving means for relatively moving the (table 3) and the plasma emitting unit 2, a moving mechanism 5 for moving the table 3 in the direction of the arrow X (left and right direction: horizontal direction) in FIG. 1 is provided.
And the heat processing with respect to the workpiece | work 100 is performed by moving the workpiece | work 100 with the table 3 to the X direction in FIG.

  As shown in each figure, the plasma emission part 2 is arranged in parallel with each other, and a pair of long plate members 23 and 24 that form a plasma generation space 21 therebetween, and a pair of plate members. 23, 24, a voltage is applied between the pair of first electrodes 25, 26 and the pair of second electrodes 27, 28 arranged in parallel to each other and the pair of first electrodes 25, 26. A first power source 29 for applying voltage, a second power source 30 for applying a voltage between the pair of second electrodes 27 and 28, and a gas supply means for supplying a predetermined gas to the plasma generation space 21 4.

The pair of long plate-like members 23 and 24 are opposed to each other along a direction perpendicular to the moving direction of the workpiece 100 (X direction in FIG. 1) and perpendicular to the normal direction of the surface 101 to be processed. Has been placed.
As shown in FIG. 3, side plates (a pair of side plates) 20 and 20 are provided at both ends in the longitudinal direction of the pair of plate-like members 23 and 24, respectively. 23 and 24 are fixed.
Specifically, each side plate 20 is formed with a pair of grooves 201 and 202 extending in the front-rear direction in FIG. 3 and parallel to each other, and each plate-like member 23 is formed in each groove 201 and 202. , 24 are respectively inserted and fixed. As a result, the pair of plate-like members 23 and 24 are supported by the side plates 20 and 20 so as to maintain a constant distance at both ends thereof.

In addition, as a method of fixing to each side plate 20 of each plate-shaped member 23 and 24, methods, such as fitting, melt | fusion, adhesion | attachment with an adhesive agent, are mentioned, for example.
A plasma generation space 21 is defined by the pair of plate-like members 23 and 24 and the pair of side plates 20. The plasma generation space 21 communicates with a gas reservoir 43 of the gas supply means 4 described later above.

On the other hand, the plasma generation space 21 is opened to the outside below, and a plasma emission port 214 is formed. Plasma (thermal plasma) generated in the plasma generation space 21 is released through the plasma discharge port 214.
Further, as shown in FIG. 4, the pair of plate-like members 23, 24 are positioned on the upper first portions 231, 241 and the workpiece 100 side (lower) with respect to the first portions 231, 241, respectively. The second portions 232 and 242 having a longer length in the longitudinal direction than the first portions 231 and 241 are connected to the first portions 231 and 241 and the second portions 232 and 242 in the longitudinal direction. It is comprised with the connection parts 233 and 243 from which length changes continuously.

In the following, in the plasma generation space 21, a region corresponding to the first portions 231 and 241 is referred to as a “first plasma generation space 211”, and a region corresponding to the second portions 232 and 242 is referred to as a “second region”. The plasma generation space 212 ”and the regions corresponding to the connection portions 233 and 243 are referred to as“ connection space 213 ”, respectively.
Each of these plate-like members 23 and 24 is made of a dielectric material.

The dielectric material is not particularly limited, and examples thereof include various plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and inorganic oxides. Examples of the inorganic oxide include metal oxides such as Al ₂ O ₃ , SiO ₂ , ZrO ₂ , and TiO ₂ , and composite oxides such as BaTiO ₃ (barium titanate).
Here, if a dielectric material having a relative dielectric constant of 10 or more at 25 ° C. is used as a constituent material of each of the plate-like members 23 and 24, a high-density plasma can be generated at a low voltage. There is an advantage that the processing efficiency of 100 is further improved.

Moreover, the upper limit of the relative dielectric constant of the usable dielectric material is not particularly limited, but those having a relative dielectric constant of about 10 to 100 are preferable. The dielectric material having a relative dielectric constant of 10 or more corresponds to a metal oxide such as ZrO ₂ or TiO ₂ or a composite oxide such as BaTiO ₃ .
The side plate 20 is also preferably made of a dielectric material similar to that of the plate-like members 23 and 24.

The first portions 231 and 241 of the pair of plate-like members 23 and 24 are electrically connected to the pair of first electrodes 25 and 26 and the second portions 232 and 242, respectively. A pair of second electrodes 27 and 28 that are electrically connected are provided.
That is, the pair of plate-like members 23 and 24 includes a pair of first electrodes 25 and 26, and a pair of second electrodes 27 and 28 closer to the workpiece 100 than the first electrodes 25 and 26. Are electrically connected to each other.

In the present embodiment, each of the electrodes 25 to 28 has a bar shape having a substantially square cross section, and is opposite to the plasma generation space 21 of the plate members 23 and 24 so that one side surface thereof is substantially parallel to each other. It is fixed to the side surface.
Examples of the method for fixing the electrodes 25 to 28 to the plate-like members 23 and 24 include methods such as screwing and bonding with an adhesive.
Although it does not specifically limit as a constituent material of these electrodes 25-28, For example, various metals, such as copper, aluminum, iron, silver, etc., stainless steel, brass, an aluminum alloy, intermetallic compounds, various carbon materials Examples thereof include materials having good electrical conductivity.

In addition, the cross-sectional shape of each electrode 25-28 is not restricted to the square shape mentioned above, For example, a circular shape, an ellipse shape, and other irregular shapes may be sufficient.
The pair of first electrodes 25 and 26 is connected to a first power source (power source unit) 29 via a conducting wire (cable) and a conducting plate (metal plate material), respectively. Thereby, it is possible to generate a discharge in the plasma generation space 21 (first plasma generation space 211) with a simple configuration.

On the other hand, the pair of second electrodes 27 and 28 is connected to a second power source (power source unit) 30 via a conducting wire (cable) and a conducting plate (metal plate material), respectively. Thereby, it is possible to generate a discharge in the plasma generation space 21 (second plasma generation space 212) with a simple configuration.
Matching devices 291 and 301 are provided in the middle of the conductors connecting the pair of first electrodes 25 and 26 and in the middle of the conductors connecting the pair of second electrodes 27 and 28, respectively. . Thereby, a voltage (electric power) can be independently applied between the second electrodes 25 and 26 and between the second electrodes 27 and 28.

  In the present embodiment, a voltage is applied between the pair of first electrodes 25 and 26 mainly by the pair of first electrodes 25 and 26, the first power source (power supply unit) 29 and the matching unit 291. A first energization means is configured, and a voltage is applied between the pair of second electrodes 27 and 28 by the pair of second electrodes 27 and 28, the second power source (power supply unit) 30 and the matching unit 301. The second energizing means is configured.

Although the circuit is not shown, frequency adjusting means (circuit) for changing the frequency of each power source 29, 30 and voltage adjusting means (circuit) for changing the maximum value (amplitude) of the applied voltage of each power source 29, 30. You may have. Thereby, the processing conditions of the plasma processing with respect to the workpiece | work 100 can be adjusted as needed.
In the following description, the plasma apparatus 1 generates a plasma in the first plasma generation space 211 by applying a voltage between the first electrodes 25 and 26, and a voltage between the second electrodes 27 and 28. A case will be described as an example where the plasma temperature is adjusted to the target temperature in the second plasma generation space 212 by applying. Thereby, the output of the first power supply 29 can be set with priority on generating high-density plasma, and the output of the second power supply 30 has priority on adjusting the plasma to a target temperature. Can be set. Therefore, it is possible to generate a high-density plasma and precisely adjust the plasma to a target temperature. As a result, the surface to be processed 101 of the workpiece 100 can be uniformly heated at a predetermined temperature.
Further, with such a configuration, it is possible to reduce power supply power necessary for generating plasma at a target temperature.

  Specifically, when the heat treatment by plasma is performed on the workpiece 100, first, the first power supply 29 is activated and a voltage is applied between the pair of first electrodes 25 and 26. At this time, an electric field is generated in the first plasma generation space 211, and when gas is supplied from the gas supply means 4 described later, discharge occurs and plasma (thermal plasma) is generated (generated). Then, when this plasma flows vertically downward and reaches the second plasma generation space 212, the voltage is applied between the pair of second electrodes 27 and 28 by the operation of the second power source 30, thereby An electric field is generated in the second plasma generation space 212, and the plasma that has reached the second plasma generation space 212 is activated again. Thereby, the plasma is heated again, and the temperature of the plasma is adjusted (finely adjusted) to the target temperature. And the plasma adjusted to this target temperature is supplied to the to-be-processed surface 101 of the workpiece | work 100, and the workpiece | work 100 is heat-processed.

Here, as shown in FIG. 3, an area (area in plan view of the first plasma generation space 211) in a cross section passing through the pair of first electrodes 25 and 26 in the plasma generation space 21 is represented by A [mm. ² ], and the area of the cross section passing through the pair of second electrodes 27 and 28 in the plasma generation space 21 (the area in plan view of the second plasma generation space 212) is B [mm ² ], A <B is preferred.

  When the areas A and B in the cross section of the plasma generation space 21 satisfy such a relationship, the size (opening) of the second plasma generation space 212 is increased in order to expand the heating region on the processing target surface 101 of the workpiece 100. Even when the area is increased, the size of the first plasma generation space 211 can be kept small, and a high-density electric field can be easily generated (given). Therefore, in the first plasma generation space 211, it is possible to expand a region where the workpiece 100 can be heat-treated while suppressing a power output required for generating plasma to be small.

In addition, since the plasma can be reliably generated in the first plasma generation space 211 and the temperature of the plasma can be reliably adjusted in the second plasma generation space 212, the generation and temperature adjustment of the plasma can be performed at a time. Compared to the configuration to be performed, the temperature distribution of the plasma supplied to the workpiece 100 can be made uniform.
Specifically, A is preferably about 0.05B to 0.8B, and more preferably about 0.1B to 0.5B. As a result, the power output required for generating plasma in the first plasma generation space 211 can be sufficiently reduced in the first plasma generation space 211 while expanding the heating region on the processing target surface 101 of the workpiece 100.

In the present embodiment, the distance between the pair of plate-like members 23 and 24 (separation distance: L _{3 in} FIG. 2) is substantially constant so that the area A and the area B satisfy the relationship as described above. And the length in the longitudinal direction of the first portions 231 and 241 (L ₁₁ in FIG. 4) is set smaller than the length in the longitudinal direction of the second portions 232 and 242 (L _{12 in} FIG. 4). Realized. On the contrary, the length L ₁₁ in the longitudinal direction of the first portions 231 and 241 and the length L ₁₂ in the longitudinal direction of the second portions 232 and 242 are set to be approximately equal, and a pair of plate-like shapes The distance L ₃ between the members 23 and 24 may be set smaller than the second portions 232 and 242 in the first portions 231 and 241.

By adopting the configuration of the present embodiment, the plate-like members 23 and 24 having substantially the same shape may be used, and these may be arranged substantially in parallel, so that the configuration of the apparatus and its manufacture are simply performed. be able to. In addition, since the plasma flow path in the plasma generation space 21 has a simple shape, turbulence and the like are prevented from occurring in the plasma generated in the first plasma generation space 211, and the second plasma generation space 212 is prevented. It can be transferred quickly and uniformly. As a result, plasma can be uniformly supplied to the workpiece 100.
Moreover, by setting it as such a structure, the length (width | variety) of the longitudinal direction of the area | region which can be heat-processed can be enlarged, and only by moving the plasma emission part 2 to one direction with respect to the workpiece | work 100, It becomes possible to heat-treat the entire surface 101 of the relatively large workpiece 100.

In the configuration of this embodiment, the distance _{L 3} between each other plate-like member 23 and 24 is not particularly limited and is preferably about 0.1 to 5 mm, more in a range of about 0.5~2mm preferable. As a result, a sufficient electric field can be applied to the gas or plasma supplied to the plasma generation space 21, plasma can be generated reliably, and the temperature of the plasma can be easily adjusted to the target temperature. .

Specific value of the longitudinal length _{L 12} of the second portion 232, 242 of the plate-like members 23 and 24, the width of the treated area of the work 100 (the region to be processed among the treated surface 101) It is preferable to be larger than the above. As a result, the entire region to be processed can be processed only by moving in one direction in the X direction without reciprocating in the Y direction.

Further, the length in the short direction (L _{22 in} FIG. 4) of the second portions 232 and 242 of the plate-like members 23 and 24 is slightly different depending on the length L ₁₂ in the longitudinal direction, and is not particularly limited. It is preferably about 5 to 120 mm, and more preferably about 10 to 30 mm. As a result, a sufficiently large second plasma generation space 212 can be secured, and the plasma temperature can be reliably adjusted to the target temperature.

Meanwhile, the first portion 231 and 241 longitudinal length _{L 11} of the plate-like members 23 and 24, the relationship between the area A and _B, is preferably located extent 0.05L ₁₂ ~0.8L 12, More preferably, there are about 0.1 L _{12 to} 0.5 L ₁₂ .
Further, the length in the short direction (L _{21 in} FIG. 4) in the first portions 231 and 241 of the plate-like members 23 and 24 is slightly different depending on the length L ₁₁ in the longitudinal direction, and is not particularly limited. It is preferably about 5 to 80 mm, and more preferably about 10 to 30 mm. Thus, a sufficiently large first plasma generation space 211 can be secured, and plasma necessary and sufficient for the heat treatment of the workpiece 100 can be generated.

  Moreover, the thickness (d in FIG. 3) of each plate-like member 23 and 24 is not particularly limited, but is preferably about 0.01 to 4 mm, and more preferably about 1 to 2 mm. Thereby, an increase in impedance can be prevented, a desired discharge can be generated at a relatively low voltage, and plasma generation and plasma reheating can be performed reliably. Further, it is possible to prevent the occurrence of arc discharge by preventing dielectric breakdown during voltage application.

  In such a plasma apparatus 1, it is preferable that the power density in the first electrodes 25 and 26 is set larger than the power density in the second electrodes 27 and 28. Thereby, more reliable and sufficient plasma can be generated in the first plasma generation space 211. In addition, in the second plasma generation space 212, the plasma temperature can be easily and reliably adjusted according to the target temperature.

Here, when the power density of the first electrodes 25 and 26 is X [W / mm ² ] and the power density of the second electrodes 27 and 28 is Y [W / mm ² ], X / Y is 1 Is preferably about 1 or more, more preferably about 1.1 to 60, and still more preferably about 2 to 40. By setting X / Y within such a range, it is possible to more reliably and sufficiently generate the plasma in the first plasma generation space 211, and more easily adjust the temperature of the plasma in the second plasma generation space 212. Become.

The specific value of the power density X of the first electrode 25, 26 is preferably in the range of about 1~30W / mm ^2, more preferably about 2~20W / mm ^2.
Meanwhile, specific values of the power density Y of the second electrode 27 and 28 is preferably in the range of about 0.1~15W / mm ^2, more preferably about 0.5~10W / mm ² .
The frequency of the power (current) supplied from the first power supply 29 to the first electrodes 25 and 26 is the frequency of the power (current) supplied from the second power supply 30 to the second electrodes 27 and 28. Is not particularly limited, but the frequency of power supplied from the first power supply 29 to the first electrodes 25 and 26 is the same as the frequency of power supplied from the second power supply 30 to the second electrodes 27 and 28. It is preferable that the second power source 30 is substantially equal to or greater than the frequency of power supplied to the second electrodes 27 and 28. As a result, plasma can be generated more reliably in the first plasma generation space 211. In addition, in the second plasma generation space 212, the plasma temperature can be easily and reliably adjusted according to the target temperature.

  Specifically, a high frequency power source is preferably used for the first power source 29, and the frequency is preferably about 5 to 75 MHz, and more preferably about 10 to 50 MHz. Thereby, even when the power density in the first electrodes 25 and 26 is slightly reduced, plasma can be reliably generated in the first plasma generation space 211. That is, the power output can be kept small.

On the other hand, both the low frequency power source and the high frequency power source can be used for the second power source 30, and the frequency is preferably about 5 Hz to 75 MHz, and more preferably about 10 Hz to 50 MHz. By setting the power to be supplied in such a frequency range, the plasma temperature can be reliably adjusted to a desired temperature.
Furthermore, in the present invention, a plurality of plate-shaped partition members 10a are provided between the pair of plate-like members 23 and 24 at predetermined intervals along the longitudinal direction thereof. Each partition member 10 a is arranged so that the width direction thereof is substantially orthogonal to the longitudinal direction of the plate-like members 23 and 24.

Each partition member 10a is provided at the center in the vertical direction of the second plasma generation space 212, and the second plasma generation space 212 (region corresponding to the second electrodes 27 and 28 in the plasma generation space 21). Is partitioned into a plurality of small spaces 11a along the longitudinal direction of the plate-like members 23, 24.
Examples of a method for fixing the partition member 10a to the plate-like members 23 and 24 include methods such as fusion and bonding with an adhesive. In addition, the partition member 10a may be formed integrally with any one of the plate-like members 23 and 24, for example.

  By providing such a partition member 10a, even when the longitudinal length of the lower end portions (second portions 232, 242) of the plate members 23, 24 is relatively large, the plate members 23, 24 Can be prevented, and the distance (separation distance) between the plate-like members 23 and 24 can be appropriately maintained. That is, the partition member 10 a functions as a spacer that maintains the distance between the plate-like members 23 and 24. This prevents the plate-like members 23 and 24 from being deformed such as warpage, and the deformation of the plasma generation space 21 (particularly, the second plasma generation space 212) due to the deformation of the plate-like members 23 and 24. Can be reliably prevented. As a result, the plasma can be generated reliably and stably, the temperature of the plasma can be reliably adjusted to the target temperature, and an appropriate heat treatment can be performed on the workpiece 100.

  In addition, by providing the partition member 10 a, the plasma supplied to the second plasma generation space 212 can be uniformly distributed along the longitudinal direction of the second plasma generation space 212. That is, the partition member 10a functions to control (rectify) the flow of plasma (gas) flowing through the second plasma generation space 212. As a result, as indicated by arrows in FIG. 4, each small space 11a partitioned by the partition member 10a becomes a plasma flow path, and plasma is uniformly introduced into each small space 11a. Therefore, in each small space 11a, the plasma can be heated to substantially the same temperature, and the plasma having a uniform temperature can be emitted from the plasma emission port 214. As a result, the workpiece 100 can be uniformly heated along the longitudinal direction of the plate-like members 23 and 24 (second plasma generation space 212).

Further, the partition member 10a distance between (Fig. 3 in L _4), which may be different from each, preferably set substantially equal. Thereby, both the function as a spacer and the function to control the flow of gas come to exhibit more notably.
The average value of the distance _{L 4} between the partition member 10a is not particularly limited, but is preferably about 5 to 500 mm, more preferably about 20 to 200 mm.

The width of the partitioning member 10a is substantially equal to the distance _{L 3} between each other plate members 23 and 24. Thereby, it can prevent more reliably that the plate-shaped members 23 and 24 warp inside.
The height of the partition member 10a (in FIG. 4 H) is the preferably 0.1 times or more the length in the lateral direction of _{L 22} of the second portion 232, 242, from 0.3 to 0. It is more preferably about 8 times. Thereby, the effect which prevents the deformation | transformation in the lower end part of each plate-shaped member 23 and 24 and the effect (rectification effect) which controls the flow of plasma (gas) are exhibited more reliably.

  Further, the partition member 10a has a shape (a rounded shape in the present embodiment) such that the thickness of the partition member 10a gradually decreases toward the workpiece 100 at the end portion on the workpiece 100 side. As a result, the plasma smoothly flows into the region immediately below the partition member 10a, and the workpiece 100 can be uniformly heat-treated along the longitudinal direction of the plate-like members 23 and 24 (plasma generation space 21). it can.

  Further, in the present embodiment, the thickness of the end of the partition member 10a opposite to the work 100 is gradually reduced toward the opposite side of the work 100 (the gas reservoir 43 of the gas supply unit 4 described later). The shape is round (round shape). Thereby, it is possible to suitably prevent the vortex from being generated when the plasma moved (lowered) to the connection space 213 collides with the end of the partition member 10a opposite to the workpiece 100. That is, plasma can be smoothly flowed downward along the end of the partition member 10a. As a result, plasma can be supplied to each small space 11a without unevenness, and the plasma can be uniformly reheated.

In the present embodiment, as shown in FIG. 4, the outer shape of the end portion of the partition member 10 a has a semicircular arc shape, but is not limited thereto, and may be, for example, a V shape.
Further, the partition member 10a is preferably positioned so that the edge of the plate members 23 and 24 is located closer to the workpiece 100 than the end of the partition member 10a on the workpiece 100 side with respect to the plate members 23 and 24. Has been placed. Thereby, the plasma generated in the plasma generation space 21 can be emitted more uniformly from the plasma emission port 214.

The number of partition members 10a to be installed is not limited to a plurality, and one partition member 10a may be provided and the second plasma generation space 212 may be partitioned into two small spaces 11a.
The installation number N of the partition members 10a is appropriately set based on the thickness of the partition members 10a (T in FIG. 4) and the length in the longitudinal direction of the second plasma generation space 212 (L _{12 in} FIG. 4). Is done. Specifically, satisfaction and installation number N of the partition member 10a, and the thickness T of the partition member 10a, the longitudinal length (discharge length) L ₁₂ of the second plasma generation space 212, the following formula 1 It is preferable to do this.
T × N / L ₁₂ × 100 ≦ 10 (%) Formula 1

By satisfying such a relationship, the partition member 10a can more reliably exhibit the two functions while preventing the occupied area of the partition member 10a from being increased unnecessarily at the plasma emission port 214. Thereby, the plasma generated in the plasma generation space 21 can be supplied to the workpiece 100 more reliably.
As the constituent material of the partition member 10a, it is preferable to use a material that does not inhibit the generation of plasma. Specifically, the same dielectric material as the plate-like members 23 and 24 can be used.
Note that the shape of the partition member 10a is not limited to a plate shape, and may be, for example, a spherical shape or a columnar shape (a columnar shape or a prismatic shape).

A predetermined gas is supplied to the plasma generation space 21 by the gas supply means 4.
The gas supply means 4 includes a gas cylinder (gas supply source) 41 filled and supplied with a predetermined gas, a regulator (flow rate adjustment means) 42 for adjusting the flow rate of the gas supplied from the gas cylinder 41, and an inner space thereof. A casing 44 that forms the gas reservoir 43, and an upstream end side of the casing 44 is connected to the gas cylinder 41, and a downstream end side (gas outlet) is provided on the upper surface of the casing 44.

The regulator 42 is arranged on the gas outlet side (downstream side) from the gas cylinder 41. Further, a valve (flow path opening / closing means) 46 for opening and closing the flow path in the supply pipe 45 is provided on the gas outlet side of the supply pipe 45 from the regulator 42.
A predetermined gas is sent out from the gas cylinder 41 with the valve 46 opened. This gas flows through the supply pipe 45, and the flow rate is adjusted by the regulator 42. Then, the gas is formed downstream of the supply pipe 45. The gas is introduced (supplied) from the gas outlet 47 into the gas reservoir 43 in the housing 44.

A pair of plate-like members 23 and 24 are joined (fixed) to the lower portion of the housing 44. Examples of a method for fixing the plate-like members 23 and 24 to the housing 44 include methods such as screwing, fusion, and adhesion using an adhesive.
A gas outlet 47 of the supply pipe 45 is installed at a substantially central portion of the upper surface of the housing 44. The gas flowing through the supply pipe 45 is supplied from the gas outlet 47 into the gas reservoir 43.

Further, the lower surface of the housing 44 has an opening 49 corresponding to the plasma generation space 21, and the gas reservoir 43 of the housing 44 and the plasma generation space 21 communicate with each other through the opening 49. ing.
A long partition plate 48 that vertically partitions a part of the gas reservoir 43 is provided on one inner surface of the housing 44, and between this partition plate 48 and the other inner surface, There is a gap.

  The gas supplied from the gas outlet 47 into the gas reservoir 43 first flows into the space above the partition plate 48, passes through the gap between the partition plate 48 and the other side surface, and enters the lower space. Flow into. In the gas reservoir 43, the gas flows in such a path (flow path), so that the flow velocity becomes uniform in each part. The gas flowing into the lower space passes through the opening 49 and is introduced (supplied) into the plasma generation space 21 (first plasma generation space 211) at a uniform flow rate.

As a gas (treatment gas) used for the treatment, a gas mainly containing an inert gas (rare gas) such as Ne, Ar, Xe, or a mixed gas thereof is preferably used. By using the plasma of the inert gas, the heat treatment can be performed while preventing inconvenience such as the surface to be processed 101 of the workpiece 100 being modified.
In addition, the processing gas preferably contains N ₂ (nitrogen gas). Thereby, plasma (thermal plasma) can be generated more reliably.

In this case, the content of N _{2 in} the processing gas is not particularly limited, but is preferably 10 vol% or less, more preferably 5 vol% or less at normal pressure (in terms of 1 atmospheric pressure). Accordingly, it is possible to generate plasma more quickly (efficiently) while preventing inconveniences such as the surface 101 of the workpiece 100 being modified.
The flow rate of the gas to be supplied is appropriately determined according to the type of gas, the degree of heat treatment, etc., and is not particularly limited, but it is usually preferably about 30 SCCM to 50 SLM.

  As shown in FIG. 4, a predetermined gas is supplied from the gas supply means 4 between the pair of plate-like members 23 and 24 (plasma generation space 21), and between the pair of first electrodes 25 and 26. When a predetermined voltage, for example, a high frequency voltage (voltage) is applied, an electric field is generated in the first plasma generation space 211, and discharge, that is, glow discharge (barrier discharge) occurs. The gas supplied by this discharge is activated (ionization, ionization, excitation, etc.), and plasma is generated. The plasma generated in the first plasma generation space 211 flows toward the plasma discharge port 214 (down vertically), and a predetermined voltage, for example, a low frequency is generated between the pair of second electrodes 27 and 28. When a voltage or a high-frequency voltage (voltage) is applied, an electric field is generated in the second plasma generation space 212, and the plasma is reactivated and reheated. The heated plasma is emitted from the plasma emission port 214 toward the workpiece 100.

A table 3 is disposed below the plasma emission unit 2. The table 3 has a flat upper surface, and the workpiece 100 is placed on the upper surface.
The constituent material of the table 3 is not particularly limited, and examples thereof include plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and various inorganic oxides (ceramics) such as the metal oxide and composite oxide. In this embodiment, the table 3 is made of a material other than the metal material.

Such a table 3 is moved in the X direction (left-right direction) in FIG. 1 by a moving mechanism (moving means) 5 provided below the table 3. As the table 3 moves, the workpiece 100 placed also moves in the same direction.
As the moving mechanism 5, any known configuration may be used, and examples thereof include a conveyor (belt drive, chain drive, etc.), a feed mechanism having a screw shaft, a roller feed mechanism, and the like.

  Further, it is preferable that the moving mechanism 5 can adjust the moving speed (the relative moving speed between the plasma emitting unit 2 and the workpiece 100). As a result, the degree of the heat treatment of the workpiece 100 can be adjusted, and the overall processing time (processing amount per unit time) can be adjusted, so that the heat treatment for the workpiece 100 can be optimized. For example, when other conditions are fixed and the relative movement speed (processing speed) of the workpiece 100 with respect to the plasma emitting unit 2 is decreased, the degree of heat treatment (density) of the workpiece 100 is increased. Dense heat treatment can be performed.

In the present invention, the table 3 side may be fixed and the plasma emission unit 2 side may move in the X direction.
Examples of the purpose of the heat treatment include drying of the liquid film, polymerization reaction of monomers in the film, polymer crosslinking reaction, crystal phase change, and the like.
Examples of the workpiece 100 subjected to the heat treatment by the plasma apparatus 1 include various glasses such as quartz glass and non-alkali glass, various ceramics such as alumina, silica, and titania, various semiconductor materials such as silicon and gallium-arsenic, polyethylene, and the like. , Polypropylene, polystyrene, polycarbonate, polyethylene terephthalate, polytetrafluoroethylene, polyimide, liquid crystal polymer, phenol resin, epoxy resin, acrylic resin, and other dielectric materials such as plastics (resin materials). Furthermore, the thing etc. with which the liquid film containing a volatile solvent etc. were formed on the base material comprised by these materials are mentioned.

Examples of the shape of the workpiece 100 include a plate shape (substrate), a layer shape, and a film shape. The workpiece 100 may be a single large substrate or a plurality of small pieces. Examples of the workpiece 100 having such a small piece include a display panel, a small piece of glass chip, a semiconductor chip, and a ceramic chip used for a liquid crystal display device, an organic EL display device, and the like.
Further, the shape of the workpiece 100 (the shape in plan view) is not limited to a rectangular shape, and may be, for example, a circular shape or an elliptical shape.
Although the thickness of the workpiece | work 100 is not specifically limited, Usually, it is preferable that it is about 0.3-2.0 mm, and it is more preferable that it is about 0.5-0.7 mm.

  The gap distance between the plasma emission part 2 and the workpiece 100 (the distance between the lower surfaces of the plate-like members 23 and 24 and the surface to be processed 101 of the workpiece 100) is not particularly limited, and can be appropriately determined according to various conditions. However, usually, it is preferably about 0.5 to 10 mm, and more preferably about 0.5 to 5 mm. Thereby, the plasma emitted from the plasma emission port 214 can be irradiated (supplied) to the surface 101 to be processed of the workpiece 100 without unevenness, and the surface 101 to be processed of the workpiece can be uniformly processed.

Note that the gap distance between the plasma emitting portion 2 and the workpiece 100 is one of the important conditions for performing a uniform and appropriate heat treatment on the surface to be processed 101 (gas type, flow rate, applied voltage). And so on).
Therefore, it is preferable that the plasma apparatus 1 has a configuration in which, for example, at least one of the plasma emission unit 2 or the table 3 can be moved in the vertical direction and the gap distance between the plasma emission unit 2 and the workpiece 100 can be adjusted.

Next, the operation (operation) of the plasma apparatus 1 will be described. An example of the temperature change of the plasma in each part of the plasma generation space 21 will be described with reference to FIG.
When the surface to be processed 101 of the workpiece 100 placed (supported) on the table 3 is subjected to heat treatment by plasma, the first power supply 29 is operated, the valve 46 is opened, and the gas flow rate is adjusted by the regulator 42. Then, the gas is sent out from the gas cylinder 41.

As a result, the gas delivered from the gas cylinder 41 flows through the supply pipe 45 and is supplied from the gas outlet 47 to the gas reservoir 43 at a predetermined flow rate. Then, the gas supplied to the gas reservoir 43 passes through the gas reservoir 43, so that the flow velocity becomes uniform in each part, passes through the opening 49, and is supplied into the first plasma generation space 211.
At this time, for example, a high frequency voltage is applied between the pair of first electrodes 25 and 26 by the operation of the first power source 29, and an electric field is generated in the first plasma generation space 211.

Gas introduced into the first plasma generation space 211 is activated to discharge by electric field acts, plasma temperature T ₁ is generated.
Here, since the output of the first power supply 29 is set as described above, plasma is generated in a high density and in a short time.
Thereafter, the generated plasma passes through the connection space 213 and is introduced into the second plasma generation space 212.

Here, in the plasma apparatus 1, since the second plasma generation space 212 is partitioned by the partition member 10a, the flow of plasma is controlled (rectified) by the partition member 10a. Therefore, plasma is supplied at a uniform flow rate into each small space 11a.
When passing through the connection space 213, a plasma, since the temperature T ₃ temperature drops, the second plasma generating space 212, the first plasma generating space 211 a lower temperature T ₃ than the generated plasma in Plasma is introduced.

At this time, for example, a low frequency voltage or a high frequency voltage is applied between the pair of second electrodes 27 and 28 by operating the second power supply 30, and an electric field is generated in the second plasma generation space 212, thereby discharging That is, glow discharge (barrier discharge) occurs. Thus, the plasma is re-heated, the temperature T ₂ of interest.
At this time, the output of the second power supply 30 is set to a condition such that the plasma temperature is precisely adjusted to the target temperature in the second plasma generation space 212.

Moreover, in this plasma apparatus 1, since the partition member 10a is provided, deformation at the lower ends of the plate-like members 23 and 24 is prevented or suppressed. For this reason, the second plasma generation space 212 has a good shape, the second electrodes 27 and 28 are securely fixed to the plate-like members 23 and 24, and the impedance of the energization circuit is appropriate. It has become. Further, as described above, plasma is supplied at a uniform flow rate in each small space 11a.
Therefore, in each small space 11a, the plasma is heated to a substantially equal temperature and is uniformly emitted toward the workpiece 100 from the plasma emission port 214.

On the other hand, at the same time, the moving mechanism 5 is operated to move the table 3 at a constant speed, for example, in the X direction in FIG. As a result, when the workpiece 100 passes directly below the plasma emission port 214, the emitted plasma (activated gas) comes into contact with the surface to be processed 101 of the workpiece 100 and is uniform on the surface to be processed 101. Good heat treatment is applied.
By moving the table 3, uniform and satisfactory heat treatment can be performed on the entire region to be processed of the workpiece 100.
The moving speed of the table 3 is preferably about 0.1 to 100 mm / min, and more preferably about 1 to 10 mm / min. The moving speed may be changed as necessary.

Note that the temperature control pattern shown in FIG. 4 is an example, and is not limited thereto. For example, the temperature control may be performed so that T ₁ = T ₂ or T ₁ <T ₂ . However, as shown in FIG. 4, by controlling the temperature so that the plasma temperature T ₁ at the time of generation (generation)> the target temperature T ₂ , the plasma temperature can be easily adjusted and supplied to the workpiece 100. The temperature of the plasma can be made more uniform.

  In addition, after finishing the heat treatment of one workpiece 100 or before starting the heat treatment, the plasma apparatus 1 supplies a gas into the first plasma generation space 211 and the first electrodes 25, 26. A voltage (electric power) is applied in the meantime to continue the generation (generation) of the plasma, but the amount of gas supply is set to an amount that does not cause the plasma to be emitted from the plasma emission port 214 and the plasma is not supplied to the workpiece 100 ( That is, it can be in a standby state.

  In this case, at the time of starting (resuming) the heat treatment, the gas supply amount is increased to such an amount that plasma is emitted, and the second power source 30 is operated to connect the second electrodes 27 and 28. By starting application of a voltage to the second plasma generation space 212, the temperature of the plasma can be adjusted and emitted from the plasma emission port 214. That is, it can be set as a processing state (processable state).

  Since the adjustment of the plasma temperature performed in the second plasma generation space 212 is performed in a shorter time than the generation (generation) of the plasma performed in the first plasma space 211, such a standby state is provided. Thus, plasma adjusted to the target temperature can be emitted in a short time. Therefore, the responsiveness of the plasma apparatus 1 at the time of starting the heat treatment can be improved.

Second Embodiment
Next, a second embodiment of the plasma apparatus of the present invention will be described.
FIG. 5 is a longitudinal sectional view showing a second embodiment of the plasma apparatus of the present invention, and FIG. 6 is a sectional view taken along line A′-A ′ and a sectional view taken along line B′-B ′ in FIG. 7 is a diagram (longitudinal sectional view) schematically showing a gas flow in the plasma emitting portion shown in FIG.
In the following description, the upper side in FIGS. 5 and 7 is referred to as “upper” and the lower side is referred to as “lower”.

Hereinafter, the plasma apparatus of the second embodiment will be described focusing on the differences from the plasma apparatus of the first embodiment, and the description of the same matters will be omitted.
The plasma apparatus 1 of the second embodiment is the same as the plasma apparatus 1 of the first embodiment except that the installation location of the partition members is different.
That is, as shown in FIGS. 5 to 7, in the plasma device 1 of the second embodiment, the partition member 10 b is further provided at the center in the vertical direction of the first plasma generation space 211 to generate the first plasma. A space 211 (region corresponding to the first electrodes 25 and 26 in the plasma generation space 21) is partitioned into a plurality of small spaces 11b along the longitudinal direction of the plate-like members 23 and 24.

The configuration (shape, constituent material, function) of the partition member 10b, the fixing method to the plate members 23 and 24, the number of installation, the installation position, and the like can be the same as those of the partition member 10a.
By providing such a partition member 10b, it is possible to prevent the plate-like members 23 and 24 from approaching each other even when the longitudinal lengths of the first portions 231 and 241 are relatively large. The distance (separation distance) between the members 23 and 24 can be appropriately maintained. Thereby, plasma can be generated reliably and stably.

  Further, by providing the partition member 10b, the gas (gas) supplied to the plasma generation space 21 can be uniformly distributed (rectified) along the longitudinal direction of the first plasma generation space 211. Accordingly, as indicated by arrows in FIG. 7, each small space 11b partitioned by the partition member 10b serves as a gas flow path, and gas is uniformly introduced into each small space 11b. Therefore, it is possible to generate plasma with substantially the same density in each small space 11b.

Furthermore, plasma is supplied to each small space 11a at a substantially equal flow rate, and the plasma can be heated uniformly. As a result, the workpiece 100 can be more reliably and uniformly heated.
Moreover, the plasma emission part 2 can be made into the following structures by adding another structure.

Hereinafter, another configuration example of the plasma emission unit 2 will be described.
FIG. 8 is a longitudinal sectional view showing another configuration example of the plasma emitting unit.
The plasma emitting unit 2 shown in FIG. 8 includes a cooling unit 6 that cools the electrodes 25 to 28, and a shielding unit that shields a region from which plasma is emitted from the external environment between the plasma emitting unit 2 and the workpiece 100. Isolation means) 7.

The cooling means 6 includes a cover 61 that covers (accommodates) the electrodes 25 and 27, a cover 62 that covers the electrodes 26 and 28, a refrigerant (for example, water) 63 supplied into the covers 61 and 62, and the refrigerant 63 And a refrigerant supply means (not shown) for supplying the liquid into the covers 61 and 62.
The covers 61 and 62 are liquid-tightly fixed to the plate-like members 23 and 24. As a method of fixing the covers 61 and 62 to the plate-like members 23 and 24, the fixing method as described above can be used.

By providing such a cooling means 6, the electrodes 25 to 28 can be cooled, the electrodes 25 to 28 are heated more than necessary, and the thermal expansion coefficient between the plate-like members 23 and 24 and the electrodes 25 to 28 is increased. Due to the difference, it is possible to suitably prevent the electrodes 25 to 28 from falling off the plate members 23 and 24 and the plate members 23 and 24 and the electrodes 25 to 28 from being damaged.
On the other hand, the shielding means 7 includes long shielding plates 71 and 72 provided at the ends of the plate-like members 23 and 24 on the workpiece 100 side, and side plates 70 and 70 that fix both ends of the shielding plates 71 and 72. And have.

Each side plate 70 has the same configuration as the side plate 20, and fixes and supports the shielding plates 71 and 72 in the same manner as the plate-like members 23 and 24.
Further, as a method for fixing the shielding plates 71 and 72 to the plate-like members 23 and 24, the fixing method as described above can be used.
As the constituent materials of the shielding plates 71 and 72 and the side plates 20, the dielectric materials as described above are preferably used.

By providing such an isolating means 7, it is possible to prevent the plasma emitted from the plasma emitting unit 2 from being lowered between the plasma emitting unit 2 and the workpiece 100. That is, the shielding plates 71 and 72 function as heat insulating plates.
For this reason, the workpiece 100 can be more reliably heat-treated with plasma, the control responsiveness can be improved during the heat treatment, and the processing time of the workpiece 100 can be shortened.
In the illustrated example, the cooling means 6 and the blocking means 7 are provided in the second embodiment, but it goes without saying that the present invention may be applied to the first embodiment.

In the plasma apparatus 1 described above, the workpiece 100 side moves. However, in the present invention, for example, the plasma emission unit 2 side may move, and the workpiece 100 and the plasma emission unit 2 may move. Both may move in different directions.
Further, the voltage applied between the pair of first electrodes 25 and 26 and the pair of second electrodes 27 and 28 is not limited to a high-frequency voltage, for example, a pulse wave or a microwave. Also good.

The plasma apparatus of the present invention has been described based on the illustrated embodiments. However, the present invention is not limited to these embodiments, and the configuration of each part is replaced with an arbitrary configuration having the same function. can do. Moreover, other arbitrary structures and processes may be added.
In the above embodiment, it is assumed that the plasma apparatus heat-treats the surface of the work under atmospheric pressure, but in the present invention, the heat-treating is performed on the surface of the work in a reduced pressure or vacuum state. Also good.

Further, a pair of electrodes is further provided between the pair of first electrodes and the pair of second electrodes, above the pair of first electrodes, and below the pair of second electrodes. One set or a plurality of sets may be provided.
Further, in each of the above embodiments, plasma is generated by applying a voltage between a pair of first electrodes, and a voltage is applied between the pair of second electrodes, whereby the temperature of the plasma is set to a target temperature. In the plasma apparatus of the present invention, the purpose of use (method of use) of the pair of first electrodes and the pair of second electrodes is limited to these. is not.

It is a partial section perspective view showing a 1st embodiment of a plasma device of the present invention. It is a longitudinal cross-sectional view which shows typically the plasma emission part with which the plasma apparatus shown in FIG. 1 is provided. It is the sectional view on the AA line in FIG. 2, (a), and BB sectional drawing (b). FIG. 3 is a diagram (longitudinal sectional view) schematically showing a gas flow in the plasma emitting section shown in FIG. 2. It is a longitudinal cross-sectional view which shows 2nd Embodiment of the plasma apparatus of this invention. FIG. 6 is a cross-sectional view taken along line A′-A ′ in FIG. 5 (a) and a cross-sectional view taken along line B′-B ′ (b). FIG. 6 is a diagram (longitudinal sectional view) schematically showing a gas flow in the plasma emitting section shown in FIG. 5. It is a longitudinal cross-sectional view which shows the other structural example of a plasma emission part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Plasma apparatus 2 ... Plasma emission part 20 ... Side plate 201, 202 ... Groove 21 ... Plasma generation space 211 ... First plasma generation space 212 ... Second plasma generation space 213 ... Connection space 214 …… Plasma discharge port 23, 24 …… Plate-like member 231,241 …… First part 232,242 ... Second part 233,243 ... Connection part 25,26 …… First electrode 27, 28 …… Second electrode 29 …… First power source 30 …… Second power source 291, 301 …… Matching unit 3 …… Table 4 …… Gas supply means 41 …… Gas cylinder 42 …… Regulator 43 …… Gas Pool 44 …… Case 45 …… Supply pipe 46 …… Valve 47 …… Gas outlet 48 …… Partition plate 49 …… Open part 5 …… Movement mechanism 6 …… Cooling means 61, 62 …… Cover 63 …… Medium 7 ...... shielding means 70 ...... side plates 71, 72 ...... shielding plates 10a, 10b ...... partitioning member 11a, 11b ...... small spaces 100 ...... workpiece 101 ...... objective surface

Claims (19)

A plasma apparatus that heat-treats a surface to be processed of the workpiece with plasma emitted from the plasma emission portion while relatively moving the plasma emission portion and the workpiece,
The plasma emission part is
It is made of a dielectric material, and is arranged in parallel to each other along a direction perpendicular to the moving direction of the workpiece with respect to the plasma emitting portion and perpendicular to the normal direction of the surface to be processed. A pair of long plate-like members to be formed;
A first energizing means comprising a pair of first electrodes electrically connected to the pair of plate-like members, respectively, and a first power source for applying a voltage between the first electrodes;
A pair of second electrodes electrically connected to the workpiece side from the first electrode of the pair of plate-like members, and a second power source for applying a voltage between the second electrodes; A second energization means comprising:
A partition member fixed to the plate-like member and partitioning a region corresponding to at least the second electrode in the plasma generation space into a plurality of small spaces along the longitudinal direction of the plate-like member;
Gas supply means for supplying a predetermined gas to the plasma generation space;
By applying a voltage between the pair of plate members while supplying the gas to the plasma generation space, the gas in the plasma generation space is activated to generate plasma, and the plasma is applied to the workpiece. A plasma device characterized in that the plasma device is configured to emit toward.   The plasma device according to claim 1, wherein the partition member is further provided in a region corresponding to the first electrode in the plasma generation space.   The plasma apparatus according to claim 1, wherein the partition member has a function as a spacer for maintaining a distance between the pair of plate-like members.   The plasma device according to any one of claims 1 to 3, wherein the partition member has a function of controlling a flow of gas flowing through the plasma generation space.   5. The plasma device according to claim 1, wherein a plurality of the partition members are arranged at predetermined intervals along a longitudinal direction of the plate-like member.   6. The plasma apparatus according to claim 1, wherein the partition member has a plate shape, and the end portion on the workpiece side has a shape such that the thickness thereof gradually decreases toward the workpiece.   The plasma apparatus according to claim 1, wherein an edge of the plate-like member is located closer to the workpiece than an end of the partition member on the workpiece.   The plasma apparatus activates the gas in the plasma generation space by supplying a voltage between the pair of plate members by the first energizing means while supplying the gas to the plasma generation space. The plasma is generated and the voltage is applied between the pair of plate-like members by the second energizing means, thereby adjusting the temperature of the generated plasma to the target temperature and adjusting the target temperature. The plasma apparatus according to claim 1, wherein the plasma is emitted toward the workpiece. The area in the cross section passing through the pair of first electrodes in the plasma generation space is A [mm ² ], and the area in the cross section through the pair of second electrodes in the plasma generation space is B [mm. when the ^2] the plasma apparatus according to any one of the claims 1 to a <B 8.   The plasma apparatus according to claim 9, wherein A is 0.05B to 0.8B. The distance between the plate-like members is substantially constant,
11. The pair of plate-like members according to claim 9 or 10, wherein a length in a longitudinal direction in a portion where the first electrode is provided is smaller than a length in a longitudinal direction in a portion where the second electrode is provided. The plasma apparatus as described.   The plasma apparatus according to claim 1, wherein a power density in the first electrode is larger than a power density in the second electrode. The power density at the first electrode is X [W / mm ² ], and the power density at the second electrode is Y [W / mm ² ], X / Y is 1.1 or more. 12. The plasma device according to 12.   The frequency of power supplied from the first power source to the first electrode is substantially equal to the frequency of power supplied from the second power source to the second electrode, or the second power source supplies the first electrode. The plasma apparatus according to claim 1, wherein the plasma apparatus has a frequency higher than that of power supplied to the two electrodes.   The plasma apparatus according to claim 1, wherein the gas contains an inert gas as a main component.   The plasma apparatus according to claim 1, wherein the gas contains nitrogen gas.   The plasma apparatus according to claim 16, wherein the content of nitrogen gas in the gas is 10 vol% or less at normal pressure.   The plasma apparatus according to claim 1, further comprising a moving unit that relatively moves the plasma emitting unit and the workpiece. The plasma apparatus according to claim 18, wherein the moving means has a function of adjusting a relative moving speed between the plasma emitting unit and the workpiece.

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