JP2007245645A - Two-layered film, its manufacturing method, manufacturing method of printed circuit board and two-layered film manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polymer-metal two-layered film having sufficient adhesion strength in its metal layer even if used in high density printed wiring, a manufacturing method of the two-layered film, a manufacturing method of a printed circuit board and a two-layered film manufacturing apparatus. <P>SOLUTION: The two-layered film is equipped with a polymer film 10, the first metal film 12, which contains 60-100 wt.% of nickel formed on the polymer film 10 under a mixed gas atmosphere of an inert gas and a nitrogen gas by a vacuum vapor deposition method, an ion plating method or a sputtering method, and a second metal film 14 based on copper formed on the first metal film 12 and manufactured by a process for setting the mixing ratio of the inner gas and the nitrogen gas, a process for forming the first metal film, which contains 60-100 wt.% of nickel, on the polymer film 10 by a vacuum vapor deposition method or the like under the gas atmosphere of the mixing ratio and a process for forming the second metal film based on copper on the first metal film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a two-layer film, a method for producing a two-layer film, a method for producing a printed circuit board, and a device for producing a two-layer film, and in particular, a two-layer film having high adhesion strength between a metal layer and a polymer layer and a method for producing the same. About.

  In recent years, with the miniaturization of electrical and electronic products, the conductor width of printed wiring boards and the narrowing, multi-layer, and high density of conductors are progressing. As these substrates, conventionally, insulating materials such as paper / phenol resin impregnation system, paper / epoxy resin impregnation system, glass cloth / epoxy resin impregnation system, and ceramic materials have been often used. These materials have a problem that they are poor in flexibility and are difficult to cope with various uses. For this reason, a flexible printed wiring board in which a copper thin film is formed on a plastic film is used. The plastic film is rich in flexibility and has high insulation properties, and if a thermally stable plastic film such as a polyethylene terephthalate film or a polyimide film is used, the plastic film is thermally strong, and its application is widened. However, the copper thin film formed on the plastic film has a drawback that it is easily peeled off during the manufacturing process and use. Then, in order to increase the adhesive strength of a copper thin film, the proposal etc. which form a copper thin film by sputtering in nitrogen atmosphere are made | formed (refer patent document 1).

Japanese Patent No. 2982851 (paragraphs 0016 and 0017)

  However, the copper thin film formed by the above method has not been able to be said to have sufficient adhesion strength for use in high-density printed wiring. Accordingly, the present invention provides a polymer-metal two-layer film, a two-layer film manufacturing method, a printed circuit board manufacturing method, and a two-layer film in which the metal layer has sufficient adhesion strength even when used for high-density printed wiring. An object of the present invention is to provide a manufacturing apparatus.

  In order to achieve the above object, the two-layer film according to the first aspect of the present invention includes, for example, as shown in FIG. 1, a polymer film 10; on the polymer film 10, an inert gas and a nitrogen gas. A first metal film 12 containing 60 wt% or more and 100 wt% or less of nickel formed by vacuum deposition, ion plating or sputtering in a mixed gas atmosphere; formed on the first metal film 12 And a second metal film 14 mainly composed of copper.

  When comprised in this way, the 1st metal containing 60 to 100 weight% of nickel formed by the vacuum evaporation method, the ion plating method, or the sputtering method in the mixed gas atmosphere of inert gas and nitrogen gas The film acts as an adhesive layer, and becomes a two-layer film having high adhesion strength between a metal film mainly composed of copper and a polymer film. The inert gas refers to rare gases such as helium, neon, argon, krypton, xenon, and radon, and does not include nitrogen or carbon dioxide.

  Moreover, in order to achieve the said objective, the two-layer film which concerns on invention of Claim 2 is, for example, as shown in FIG. 1, the polymer film 10; On the polymer film 10, inert gas and nitrogen gas A first gas containing 50 atomic% to 99 atomic% of nickel atoms and 1 atomic% to 50 atomic% of nitrogen atoms formed by a vacuum deposition method, an ion plating method, or a sputtering method. A metal film 12; and a second metal film 14 formed on the first metal film 12 and containing copper as a main component.

  With this configuration, nickel atoms are formed in a mixed gas atmosphere of an inert gas and a nitrogen gas by a vacuum deposition method, an ion plating method, or a sputtering method. The 1st metal film containing 1 atomic% or more and 50 atomic% or less acts as an adhesive layer, and becomes a two-layer film having high adhesion strength between a metal film mainly composed of copper and a polymer film.

  In addition, the two-layer film according to the invention described in claim 3 is the two-layer film according to claim 1 or 2, wherein the adhesion strength between the polymer film 10 and the first metal film 12 is an initial 250 N. / M or more.

  If comprised in this way, even if it uses for a high-density printed wiring board, for example, it will become a two-layer film which has suitable adhesive strength.

  The two-layer film according to the invention described in claim 4 is the two-layer film according to any one of claims 1 to 3, wherein the polymer film 10 is formed of a polymer containing nitrogen atoms. Has been.

  If comprised in this way, since a polymer film contains a nitrogen atom, the adhesiveness with respect to the nickel of a polymer film will go up, and it will become a two-layer film which is easy to process in the process of a two-layer film. For example, it is easy to manufacture a printed circuit board from a two-layer film.

  Moreover, the two-layer film according to the invention described in claim 5 is the two-layer film according to claim 4, wherein the polymer containing nitrogen atoms is composed of polyimide, polyetherimide, polyamideimide, and aramid. Any one of the above.

  When configured in this way, polyimide, polyetherimide, polyamideimide, and aramid are all resistant to high temperatures. For example, when processed into a printed circuit board, a two-layer film that is not easily damaged even when exposed to high temperatures by soldering. Become.

  Further, the two-layer film according to the invention described in claim 6 is the two-layer film according to any one of claims 1 to 5, wherein the thickness of the first metal film 12 is 3 nm or more and 100 nm. The thickness of the second metal film 14 is 20 nm or more and 5000 nm or less.

  With this configuration, the thickness of the first metal film becomes a thickness that provides high adhesion strength, and the thickness of the second metal film increases, for example, the productivity of the subsequent plating process, And since it becomes the thickness of the range which can perform an etching process easily, it becomes a 2 layer film of appropriate thickness.

  In addition, the two-layer film according to the invention described in claim 7 is the second metal film in the two-layer film according to any one of claims 1 to 6, for example, as shown in FIG. A third metal film 16 mainly composed of copper is formed on the electrode 14 by an electrodeposition method or an electroless plating method.

  If comprised in this way, it will become a 2 layer film with a high copper film | membrane with high adhesive strength with a polymer film.

  In order to achieve the object, a method for producing a two-layer film according to the invention described in claim 8 includes a step of setting a mixing ratio of an inert gas and a nitrogen gas, as shown in FIGS. 1 and 2, for example. A first metal film 14 containing 60 wt% or more and 100 wt% or less of nickel is formed on the polymer film 10 by a vacuum deposition method, an ion plating method, or a sputtering method in a mixed gas atmosphere of the above mixing ratio. And a step of forming a second metal film 14 mainly composed of copper on the first metal film 12.

  With this configuration, the first metal film containing nickel in an amount of 60 wt% to 100 wt% by vacuum deposition, ion plating, or sputtering in a mixed gas atmosphere of an inert gas and nitrogen gas. Since it forms, the 1st metal film | membrane of nickel containing nitrogen is formed uniformly, and it becomes a manufacturing method of the two-layer film with high adhesive strength and stable. Furthermore, since the first metal film is formed by a vacuum deposition method, an ion plating method, or a sputtering method, it is a method for producing a two-layer film suitable for industrial production.

  In order to achieve the object, a method for producing a two-layer film according to the invention described in claim 9 includes a step of setting a mixing ratio of an inert gas and a nitrogen gas, as shown in FIGS. 1 and 2, for example. A 50 atom% or more and 99 atom% or less nitrogen atom is formed on the polymer film 10 by a vacuum deposition method, an ion plating method or a sputtering method in a mixed gas atmosphere of an inert gas and a nitrogen gas. Forming a first metal film 12 containing 1 atomic% or more and 50 atomic% or less; and forming a second metal film 14 mainly composed of copper on the first metal film 12.

  If comprised in this way, 50 to 99 atomic% of nickel atoms and 1 atom of nitrogen atoms will be carried out by the vacuum evaporation method or the ion plating method or sputtering method in the mixed gas atmosphere of inert gas and nitrogen gas. Since the first metal film containing not less than 50% and not more than 50 atomic% is formed, the first metal film is uniformly formed, and the manufacturing method of a stable two-layer film with high adhesion strength is obtained. Furthermore, since the first metal film is formed by a vacuum deposition method, an ion plating method, or a sputtering method, it is a method for producing a two-layer film suitable for industrial production.

  Moreover, the method for producing a two-layer film according to the invention described in claim 10 is a mixed gas in the method for producing a two-layer film according to claim 8 or 9, as shown in FIGS. 1 and 2, for example. However, it contains 20% by volume or more and less than 100% by volume of nitrogen gas.

  If comprised in this way, since mixed gas contains 20 volume% or more and less than 100 volume% of nitrogen gas, nitrogen will be contained in the 1st metal film shape | molded and the 1st metal film will act as an adhesion layer. It becomes a two-layer film having high adhesion strength between a metal film mainly composed of copper and a polymer film.

  In order to achieve the above object, a method for manufacturing a printed circuit board according to an eleventh aspect of the present invention is a method for producing a two-layer film according to any one of the eighth to tenth aspects, as shown in FIG. A step of producing a two-layer film by the production method (steps St11 to St13); a step of forming a print pattern on the two-layer film produced by the method of producing a two-layer film (steps St21 to St25); and a print pattern being formed And a step (step St41) of arranging elements on the two-layer film.

  When configured in this way, wiring is performed using a two-layer film in which a polymer film and a metal film having high adhesion strength are formed, and an element is disposed thereon, so that a method for manufacturing a printed circuit board with high wiring strength and Become.

  In order to achieve the above object, a two-layer film manufacturing apparatus according to the invention described in claim 12 is a two-layer film manufacturing apparatus for forming a metal film on a polymer film 10 as shown in FIG. A film running device 32, 32 'for running the polymer film 10; a metal ionizer 38 for heating a metal or applying an electrode to the metal; a vacuum for housing the film running device 32, 32' and the metal ionizer 38 Vacuum chambers 34 and 35 for evacuating the vacuum chamber 33; Nitrogen gas supply devices 43, 44, and 45 for supplying nitrogen gas to the vacuum chamber 33; Non-supply for supplying inert gas to the vacuum chamber 33 Active gas supply devices 44, 46 and 47 are provided.

  When constituted in this way, the two-layer film manufacturing apparatus includes a vacuum chamber, a vacuum device, a nitrogen gas supply device that supplies nitrogen gas to the vacuum chamber, and an inert gas supply device that supplies inert gas to the vacuum chamber. Therefore, it is a two-layer film manufacturing apparatus suitable for forming a metal film on a polymer film while supplying a mixed gas of nitrogen gas and inert gas under vacuum.

  In the two-layer film according to the present invention, 60 wt.% Of nickel formed by a vacuum deposition method, an ion plating method or a sputtering method in a mixed gas atmosphere of an inert gas and a nitrogen gas on the polymer film. Since the first metal film including the first metal film containing 100% by weight or more and 100% by weight or less and the second metal film mainly composed of copper formed on the first metal film are provided, the first metal film acts as an adhesive layer. Thus, a two-layer film having high adhesion strength between the metal layer and the polymer layer is obtained. In the two-layer film according to the present invention, the polymer film and nickel atoms formed on the polymer film by a vacuum deposition method, an ion plating method, or a sputtering method in a mixed gas atmosphere of an inert gas and a nitrogen gas. A first metal film containing 1 atom% or more and 50 atom% or less of nitrogen atoms, and a second metal film mainly composed of copper formed on the first metal film, Therefore, even if the first metal film acts as an adhesive layer and is used for high-density printed wiring, it becomes a two-layer film having high adhesion strength between the metal layer and the polymer layer.

  The method for producing a two-layer film according to the present invention includes a step of setting a mixing ratio of an inert gas and a nitrogen gas, a vacuum deposition method or an ion plate in a mixed gas atmosphere of a mixing ratio on a polymer film. A step of forming a first metal film containing 60 wt% or more and 100 wt% or less of nickel by a plating method or a sputtering method, and a step of forming a second metal film containing copper as a main component on the first metal film Therefore, the first metal film acts as an adhesive layer, and the method for producing a two-layer film in which the metal layer and the polymer layer are difficult to peel off is obtained. The method for producing a two-layer film according to the present invention includes a step of setting a mixing ratio of an inert gas and a nitrogen gas, and a vacuum in a mixed gas atmosphere of an inert gas and a nitrogen gas on the polymer film. Forming a first metal film containing nickel atoms by 50 atom% or more and 99 atom% or less and nitrogen atoms by 1 atom% or more and 50 atom% or less by vapor deposition, ion plating or sputtering; and first metal film Forming a second metal film containing copper as a main component on the first layer, so that the first metal film acts as an adhesive layer, and the metal layer and the polymer layer are difficult to peel off. Become a method. Furthermore, by manufacturing a printed circuit board using the two-layer film manufactured by the above manufacturing method, a printed circuit board manufacturing method in which the metal layer and the polymer layer are difficult to peel off is obtained.

  The apparatus for producing a two-layer film according to the present invention is a two-layer film production apparatus for forming a metal film on a polymer film, the film running apparatus for running the polymer film, and the metal heating or the metal A metal ionizer for applying an electrode; a vacuum chamber for housing the film traveling device and the metal ionizer; a vacuum device for evacuating the vacuum chamber; a nitrogen gas supply device for supplying nitrogen gas to the vacuum chamber; and a vacuum 2 is suitable for forming a metal film on a polymer film while supplying a mixed gas of nitrogen gas and inert gas under vacuum. It becomes a layer film manufacturing apparatus.

  Embodiments of the present invention will be described below with reference to the drawings. In each figure, the same or equivalent devices are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 (a) shows a cross-sectional view of the two-layer films 1 to 3, which is the first embodiment of the present invention. The two-layer films 1 to 3 are mainly used as a printed wiring board film for producing a printed circuit board. The two-layer film 1 shown in FIG. 1A includes a polymer film 10, a first metal film 12 formed on the polymer film 10, and a second film formed on the first metal film 12. And a metal film 14. Here, the two-layer film 1 includes a polymer film 10, a first metal film 12, and a second metal film 14. However, the one-layer polymer film 10 and the one-layer metal film (first metal film Since it has the film 12 and the second metal film 14), it is called a two-layer film.

  When the polymer film 10 is exposed to a high temperature when forming a metal film thereon, or when a device and a conductor are soldered on a two-layer film and exposed to a high temperature at that time, etc. A polymer film having heat resistance is preferably used. Moreover, it is preferable that it is a polymer | macromolecule which has corrosion resistance with respect to processes, such as an etching at the time of processing into a board | substrate. Polymers containing nitrogen atoms are suitable because they are generally excellent in adhesion. Furthermore, many of them are excellent in heat resistance, and polymer films containing nitrogen atoms are often used preferably. In particular, polyimide, polyetherimide, polyamideimide, aramid, and the like are preferably used because they have high heat resistance. The nitrogen atom is not contained in the molecular structure of the main raw material of the polymer film, and may be contained in the additive. The thickness of the polymer film is 1 μm or more and 500 μm or less, preferably 3 μm or more, more preferably 10 μm or more, preferably 300 μm or less, and more preferably 150 μm or less. When the thickness of the polymer film is too thin, handling for a circuit board becomes difficult, and plating becomes difficult. If the thickness of the polymer film is too thick, it becomes rigid and becomes a two-layer film with no flexibility.

  The first metal film 12 is a film formed on the polymer film 10 and contains 60 wt% or more and 100 wt% or less of nickel containing nitrogen atoms. Here, nickel is generally 60 wt% or more and 100 wt% or less, and the rest is generally copper, titanium, or the like, but is not limited thereto. Further, when the first metal film 12 is detected by, for example, a high resolution Rutherford backscattering spectrometry method (High Resolution Rutherford Backscattering Spectrometry), the nitrogen concentration is 1 atomic% or more and 50 atomic% or less. Preferably it contains 1 atom% or more and 30 atom% or less, more preferably 1 atom% or more and 20 atom% or less. Even if such a nitrogen atom is contained, the influence on the weight% of nickel is negligibly small.

  The first metal film 12 is formed by a vacuum film formation method (hereinafter referred to as a vacuum film formation method) such as a vacuum deposition method, a sputtering method, or an ion plating method, whereby a homogeneous film can be obtained. Therefore, it is preferable. According to these vacuum film formation methods, metal ions ionized in vacuum are deposited on the polymer film to form a film, so that the film material or target from which the metal ions originate contains nitrogen as an impurity. However, since it is removed when ionized, it is generally not contained in the formed metal film. However, by forming a metal film by a vacuum film forming method in a mixed gas atmosphere of an inert gas and a nitrogen gas, the nitrogen atoms contained in these gases are contained in the formed metal film, and contain nitrogen atoms. A metal film is formed. As is clear here, sputtering in this document means that ions of an inert gas such as argon collide with a target such as a metal, and as a result, metal atoms ejected from the target adhere to the adherend (a film is deposited by sputtering). In addition to the phenomenon of adhering to the surface of the material, it refers to sputtering in a broad sense including the following phenomenon. That is, by using a mixed gas of an inert gas and a nitrogen gas as a reactive gas instead of an inert gas, a metal atom is ejected from a target such as a metal and a reaction occurs between the metal atom and the mixed gas. And adheres to the surface of the adherend to form a thin film. Such a phenomenon is called reactive sputtering. At this time, nitrogen ions hit the surface of the adherend and the surface is treated with nitrogen ions. Such treatment is called ion bombardment, and these phenomena are sometimes combined and called plasma treatment. According to sputtering, particles with metal atoms and reactive gas ejected by ion collision collide with the adherend, so that the adhesion is likely to increase. The first metal film 12 may be formed by a method other than the vacuum film formation method.

  The first metal film 12 functions as an adhesive layer between the polymer film 10 and the second metal film 14. The thickness of the first metal film 12 is preferably 3 nm to 100 nm. The thickness is preferably 10 nm or more, and preferably 30 nm or less. With such a thickness, the adhesion strength between the polymer film 10 and the first metal film 12 and the second metal film 14 is increased. Specifically, the adhesion strength in accordance with the Japan Printed Circuits Industry Association, JPCA standard “copper-clad laminate for flexible printed wiring boards (adhesive and non-adhesive type)” JPCA-BM03-2003 is initially 250 N / m or more. It is preferable. By having this adhesion strength, the two-layer film 1 becomes a two-layer film that is suitably used for high-density printed wiring without peeling off the metal film.

  The second metal film 14 is formed with copper as a main component. Here, “having copper as the main component” means that the main component is copper, and that the component contains the most copper. Preferably, the copper content is 70% by weight or more, more preferably 90% by weight or more. The second metal film is also preferably formed by a vacuum film forming method because the film is formed homogeneously and densely. The second metal film 14 is processed into a printed wiring, and the thickness is preferably 20 nm or more and 5000 nm or less. Preferably, it is 50 nm or more, and preferably 3000 nm or less. If the second metal film 14 is formed thick, it becomes easy to form a third metal film 16 which will be described later, or the electric conductivity as wiring is improved and stabilized. This is not preferable because it takes time for the film and costs are increased. Furthermore, there is a demerit that the heat at the time of film formation causes deformation such as warping and curling, and the etching at the time of processing into wiring becomes difficult. Therefore, the thickness is preferably in the above range. In order to obtain the above thickness, the second metal film 14 is particularly preferably formed by a vacuum deposition method among the vacuum film forming methods. In the vacuum deposition method, since the metal evaporation rate is high, the film can be formed at a high speed, and a thick film is easily formed. Moreover, since the energy which the evaporation metal particle has is small compared with sputtering, the damage given to a to-be-adhered body is small.

  As shown in the cross-sectional view of FIG. 1B, the two-layer film 2 may have a first metal film 12 and a second metal film 14 on both surfaces of the polymer film 10. By using the two-layer film 2 having the first metal film 12 and the second metal film 14 on both surfaces, the printed wiring can be processed on both surfaces, so that the size of the substrate can be reduced. Also in this case, since it has a single-layer polymer film and a metal film, it is called a two-layer film.

  In addition, as shown in the cross-sectional view of FIG. 1C, the two-layer film 3 may form a third metal film 16 on the second metal film 14. The third metal film 16 is a film containing copper as a main component, is similar in material to the second metal film 14, and has high adhesion strength. Since the third metal film 16 is formed thick, it is preferable to form the third metal film 16 by an electrodeposition (electroplating or electroforming) method or an electroless plating (chemical plating) method. The thickness of the third metal film 16 is preferably 1 μm or more and 100 μm or less. The third metal film 16 is also processed as the wiring of the wiring board.

  Then, with reference to FIG. 2, the manufacturing method of the two-layer film 1 which is the 1st Embodiment of this invention is demonstrated. Note that FIG. 1 is also referred to as appropriate. FIG. 2 is a schematic cross-sectional view of an apparatus for producing a two-layer film 1 in which a first metal film 12 is formed on a polymer film 10 by sputtering in a vacuum chamber 33 and a second metal film 14 is formed by vapor deposition. It is. When the two-layer film 1 is formed by combining other vacuum film forming methods, it can be manufactured by the same method. Moreover, the two-layer film 2 can be manufactured by forming the first metal film 12 and the second metal film 14 on both surfaces of the polymer film 10 using the method described here. Moreover, if the 3rd metal film 16 is formed by electrodeposition or electrodeless plating using the 2 layer film manufactured using the method demonstrated here, the 2 layer film 3 will be manufactured.

  The vacuum chamber 33 is a highly airtight container for keeping the inside vacuum, and is, for example, a cylindrical container having a length of 3 m, a width of 5 m, and a height of 3 m. An intake pipe 34 is connected to the vacuum chamber 33, and the other end is connected to a vacuum pump 35. The intake pipe 34 and the vacuum pump 35 constitute a vacuum device. In the vacuum chamber 33, an original fabric 41 on which the polymer film 10 is wound in a roll shape is installed. The polymer film 10 is guided from the original fabric 41 to the guide roller 32 and reaches the lower portion of the roller 31. The roller 31 has a cylindrical shape and rotates at the same speed in the same direction as the direction in which the polymer film 10 is fed (arrow in FIG. 2). Refrigerant pipes 36 and 37 are connected to the roller 31. The refrigerant pipes 36 and 37 are connected to a refrigerant cooling device (not shown) outside the vacuum chamber 33, from which refrigerant r is supplied into the roller 31 and returned. The roller 31 is cooled by the refrigerant r and kept at a low temperature. The polymer film 10 in contact with the lower surface of the roller 31 is led to the guide roller 32 ′ and wound around the product roller 42. That is. The guide roller 32, the roller 31, and the guide roller 32 ′ constitute a film traveling device that causes the polymer film 10 to travel.

  Under the roller 31, a container 23 in which the vapor deposition material 24 is stored is installed. The container 23 is configured to be heated by electricity (not shown). Heating by electricity can be performed by heating up to a temperature sufficiently higher than the melting point of the vapor deposition material 24, whether it is electric resistance heating, dielectric heating, high-frequency induction heating, or other heating methods, and can maintain the temperature. Good. As the vapor deposition material 24, copper is preferably used. The gap between the lower portion of the roller 31 and the upper surface of the container 23 varies depending on the type of copper material, temperature conditions, and the like, and is in the range of 1 to several 100 mm, but is not limited to the above range.

  A nickel alloy or nickel (hereinafter referred to as a target) 22 as a sputtering target is disposed on the traveling path of the polymer film 10 between the original fabric 41 and the roller 31. A cathode is connected to the target 22, an anode is connected to the polymer film 10 facing the target 22, and a voltage is applied between these electrodes. A device for applying a voltage to both electrodes constitutes a metal ionizer 38. A discharge port 44 for discharging a mixed gas of nitrogen gas and inert gas is provided near the target 22 and the polymer film 10. Nitrogen gas passes from a nitrogen gas cylinder (not shown) through a nitrogen gas pipe 43, the flow rate of which is adjusted by a nitrogen gas valve 45, and reaches a discharge port 44. Further, the flow rate of the inert gas is adjusted by an inert gas valve 47 from an inert gas cylinder (for example, an argon gas cylinder, not shown), through an inert gas pipe 46, and reaches the discharge port 44. Here, the nitrogen gas cylinder to the discharge port 44 constitute a nitrogen gas supply device, and the inert gas cylinder to the discharge port 44 constitutes an inert gas supply device. The ratio of nitrogen gas in the mixed gas is preferably 20% by volume or more and less than 100% by volume. By setting such a ratio, an appropriate ratio of nitrogen is formed in the first metal film 12 to be formed. Thus, the function of the first metal film 12 as an adhesive layer is maintained. Note that the nitrogen gas and the inert gas may be mixed in advance at a predetermined ratio in another place, and supplied as a mixed gas from one mixed gas supply device. In this case, one mixed gas supply device serves as both a nitrogen gas supply device and an inert gas supply device.

  In order to manufacture the two-layer film 1 using the above-described apparatus, first, the raw fabric 41 is placed in the vacuum chamber 31 and the polymer film 10 is guided to the product roller 42 as described above. Subsequently, after the inside of the vacuum chamber 33 is made airtight, the gas remaining in the vacuum chamber 31 is decompressed by the vacuum pump 35 until the degree of vacuum becomes, for example, 0.667 to 0.00133 Pa.

  When a voltage is applied to the electrode between the target 22 and the polymer film 10 using a metal ionization device 38 under vacuum, the gas in the vacuum chamber 33 is ionized and the ionized ions collide with the target 22. As a result, nickel and alloy atoms jump out of the target. The nickel and alloy atoms that have jumped out adhere to the polymer film with nitrogen in the atmosphere gas. This is sputtering. The mixed gas supplied from the reaction gas pipe 43 contains 20% by volume or more and less than 100% by volume of nitrogen gas. By performing sputtering in a gas atmosphere containing nitrogen in this way, The formed nickel or nickel alloy film contains nitrogen. When nickel or a nickel alloy contains nitrogen, adhesion with the polymer film 10 is enhanced.

  Further, the container 23 storing the copper 24 as a vapor deposition material is heated, and the copper 24 is heated to a temperature 200 to 1200 ° C. higher than its melting point (pure copper is 1083 ° C.) to maintain the temperature. Note that the copper 24 may contain other metal components instead of pure copper. By making the copper 24 a temperature 200 to 1200 ° C. higher than the melting point in vacuum, the vapor of the copper 24 is generated.

  The generated vapor adheres to the polymer film 10 above the container 23. This is vapor deposition. Since vapor is also at a high temperature when adhering to the polymer film 10, the polymer film 10 may be damaged by heat. Therefore, the roller 31 is cooled by the refrigerant r. The polymer film 10 in contact with the roller 31 is cooled from the contact surface with the roller 31, and does not become high temperature even when vapor of the vapor deposition material adheres, and damage due to heat can be prevented.

  In this state, the polymer film 10 is caused to travel from the original fabric 41 toward the product roller 42. During traveling, a nickel or nickel alloy film is formed as the first metal film 12 from the target 22 by sputtering in a mixed gas atmosphere containing nitrogen gas. Thereafter, copper 24 adheres to the polymer film 10 as the second metal film 14 by vapor deposition under the roller 31. The two-layer film 1 in which the first metal film 12 and the second metal film 14 are formed on the polymer film 10 is wound around the product roller 42. The speed at which the polymer film 10 travels is preferably about 1 to 100 m / min, but is not limited to the above range.

  Since the two-layer film 1 can be produced by the above method, a large amount of the two-layer film 1 can be produced industrially. In particular, since the formation of the first metal film 12 by sputtering and the formation of the second metal film 14 by vapor deposition are performed simultaneously, the manufacturing efficiency is increased. In the above description, it has been described that the formation of the first metal film 12 by sputtering and the formation of the second metal film 14 by vapor deposition are performed simultaneously. The formation of the metal film 14 may be performed separately. In this case, in the first run of the polymer film 10, only the first metal film 12 is formed, and the polymer film 10 wound around the product roller 42 is used as the original fabric 41 to run again, Only the second metal film 14 is formed. If comprised in this way, the thickness of the 1st metal film 12 and the thickness of the 2nd metal film 14 can each be adjusted arbitrarily. The formation of the first metal film 12 is not limited to sputtering, and other vacuum film formation methods may be used. The formation of the second metal film 14 is not limited to vapor deposition, and other vacuum film formation methods. Alternatively, other film forming methods may be used.

  Next, with reference to FIG. 1 again, the two-layer films 1-3 which are the 2nd Embodiment of this invention are demonstrated. Here, in the two-layer film 1 which is the second embodiment, only the first metal film 12 is different from the two-layer film described as the first embodiment, and other configurations are the same. Only one metal film 12 will be described, and the other description will be omitted.

  The first metal film 12 is a film formed on the polymer film 10, and contains 60 atomic% to 99 atomic% of nickel and 1 atomic% to 50 atomic% of nitrogen atoms. Here, the remainder other than nickel atoms and nitrogen atoms is generally copper, titanium, or the like, but is not limited thereto. Nickel or nitrogen content (atomic%) is, for example, using a sample in which the first metal film 12 is formed and etching the first metal film 12 side by, for example, sputtering gas particles for 1 minute, After the surface of the first metal film 12 is peeled off, measurement can be performed by component analysis using an X-ray photoelectron spectrometer. When the first metal film 12 contains 50 atom% or more of nickel atoms and 1 atom% or more of nitrogen atoms, the adhesive force between the polymer film 10 and the second metal film 14 becomes strong. However, if a large amount of nitrogen atoms is included so as to exceed 50 atomic%, the adhesive strength decreases. Preferably, the first metal film 12 contains 1 atom% or more and 30 atom% or less, more preferably 1 atom% or more and 20 atom% or less of nitrogen atoms.

  The first metal film 12 is preferably formed by, for example, a vacuum film forming method such as a vacuum deposition method, a sputtering method, or an ion plating method because a uniform and dense film can be obtained. According to these vacuum film forming methods, metal ions ionized in a vacuum are deposited on the polymer film to form a film, so that the film material from which the metal ions originate contains nitrogen as an impurity. Since it is removed when ionized, it is generally not contained in the formed metal film. However, a metal film containing nitrogen atoms is formed by forming a metal film by a vacuum film forming method in a mixed gas atmosphere containing nitrogen gas. The first metal film 12 may be formed by a method other than the vacuum film formation method. Note that the film material refers to a material that forms a film in each film forming method, such as a vapor deposition material that is a material of a film to be deposited in a vacuum deposition method and a target that is a film material in a sputtering method. .

  The first metal film 12 functions as an adhesive layer between the polymer film 10 and the second metal film 14. The thickness of the first metal film 12 is preferably 3 nm to 100 nm. The thickness is preferably 5 nm or more, more preferably 10 nm or more, and preferably 30 nm or less. With such a thickness, the adhesion strength between the polymer film 10 and the first metal film 12 and the second metal film 14 is increased. Specifically, the adhesion strength in accordance with the Japan Printed Circuits Industry Association, JPCA standard “copper-clad laminate for flexible printed wiring boards (adhesive and non-adhesive type)” JPCA-BM03-2003 is initially 250 N / m or more. It is preferable. By having this adhesion strength, the two-layer film 1 becomes a two-layer film having a sufficiently large adhesion strength because the metal film does not peel off and is used for high-density printed wiring. “In the initial stage” means that the two-layer film is still manufactured, and is not exposed to a high temperature exceeding room temperature or to sunlight.

  Next, with reference to FIG. 1 and FIG. 2, the manufacturing method of the 2 layer film which is 2nd Embodiment is demonstrated. The method for producing the two-layer film according to the second embodiment may be basically the same as the method for producing the two-layer film according to the first embodiment described above. The conditions of the film material for forming are different. In FIG. 2, nickel (hereinafter referred to as a target) 22 as a sputtering target disposed in the traveling path of the polymer film 10 between the raw fabric 41 and the roller 31 has a purity containing 75% by weight or more of nickel. High nickel material. Preferably, when nickel is contained in an amount of 99% by weight or more, the nickel content contained in the film when it is formed is increased, and the force for bonding the polymer film 10 and the second metal film 14 is increased. Furthermore, for example, if nickel is a substantially simple substance containing 99.9% by weight or more, the nickel content contained in the film when it is formed is further increased, and the adhesion force is further increased. is there. A cathode is connected to the target 22, an anode is connected to the polymer film 10 facing the target 22, and a voltage is applied between these electrodes using a metal ionizer 38. A discharge port 44 for supplying a mixed gas containing nitrogen gas is provided between the target 22 and the polymer film 10. Since the mixed gas supplied from the discharge port 44 is a mixture of nitrogen gas and inert gas, and the inert gas does not react with nickel atoms, other than nickel and nitrogen atoms contained in the first metal film to be formed This is preferable because the atomic content of is reduced. By performing sputtering in a mixed gas atmosphere containing nitrogen gas, the nickel film formed on the polymer film 10 contains nitrogen. When nickel contains nitrogen, the adhesiveness with the polymer film 10 is increased, and a decrease in adhesive strength at high temperatures can be prevented. The other steps in the method for manufacturing a two-layer film according to the second embodiment are the same as those described in the method for manufacturing a two-layer film according to the first embodiment, and therefore redundant description is omitted. .

  Then, with reference to the flowchart of FIG. 3, the example of the manufacturing method of a printed circuit board using the 2 layer film which is 1st Embodiment is demonstrated. In FIG. 3, the routes (St16, St27 to 28, and St29) indicated by broken lines are routes that do not necessarily have to be passed (do not be implemented), and do not pass both St16 and St27 to 28. .

  First, a mixed gas of nitrogen gas and inert gas is supplied into a vacuumed vacuum chamber (St11), and a nickel film is formed by sputtering while supplying the mixed gas (St12). Further, a copper film is formed on the nickel film in a vacuum chamber to form a two-layer film (St13). As described so far, by forming a nickel film while supplying a mixed gas, a nickel film having nitrogen atoms is formed, and by forming a copper film on the nickel film, a polymer film and A two-layer film having a high adhesion strength is formed. The method for producing the two-layer film may be other methods as described above.

  For example, in the case of the negative type, a resist is formed by applying a material having a property that is not eluted in the subsequent development process on the copper film of the two-layer film (St21). A mask pattern is exposed on the resist (St22). The resist is cured by being exposed to light and is not dissolved even in a subsequent development step. Therefore, by developing, the uncured resist is eluted, and the resist according to the mask pattern is left on the copper film (St23). If developed, etching is performed (ST24). By etching, the copper film under the portion from which the resist is eluted is eluted. That is, the copper film and the resist remain only in the exposed part. By stripping the resist, the remaining copper film becomes a conductive path, and a substrate on which a printed pattern is formed is manufactured (St25).

  A conductive wire is soldered to the substrate on which the printed pattern is formed (St31), and a predetermined element is mounted to manufacture the printed substrate (St41). According to this printed circuit board manufacturing method, the adhesion strength between the metal layer and the polymer layer is high and the wiring is difficult to peel off, so the conductor width and the space between the conductors can be reduced, and the printed circuit board can be downsized. it can. In addition, you may form the plating film which has copper as a main component by the electrolytic method or the electroless-plating method further on the board | substrate with which the printed pattern was formed (St29). The plating layer mainly composed of copper is formed on the conductive path formed of the copper film, but is not formed on the exposed portion of the polymer film. That is, the plating film is formed on the substrate on which the printed pattern is formed. By forming the conductive path, the conductive path can be thickened. When the conductive path is thick, the conductivity is high, which is preferable.

  After the two-layer film is formed (St13), a copper film may be further stacked by plating or other methods (St16). By forming the copper film in an overlapping manner, the thickness of the copper film becomes thick, that is, the printed conductive path becomes thick and the electric resistance decreases. This is preferable because the conductive path can be thickened without changing the thickness on the printed plane, and the size of the printed board is not increased.

  Alternatively, after the mask pattern is exposed and developed on the two-layer film (St23), a substrate on which a print pattern is formed as follows may be manufactured. First, development is performed to leave only the resist according to the mask pattern, and then copper is plated (St27). Then, since the resist is not plated, copper is plated only on the portion where the copper film is exposed by development. Therefore, the substrate on which the printed pattern is formed is manufactured by removing the resist and the underlying copper film (St28). This method is called a semi-additive method, and a portion to be exposed is a portion on which a conductive path is printed. This is opposite to the method described so far, and is a positive type exposure. Note that exposure in which the unexposed portion is a conductive path is called a negative type. By using this semi-additive method, the thickness of the conductive path (thickness of the copper film) can be easily increased, and moreover, compared to the method of plating the copper film before development, the eluted copper The amount can be reduced, i.e. the consumption of copper can be reduced.

  The method for producing a printed circuit board is not limited to the above, and various methods can be used. The first metal containing 60% by weight or more of nickel on a polymer film by a vacuum film-forming method in a mixed gas atmosphere. A substrate on which a printed pattern is formed is formed using a two-layer film on which a second metal film containing copper as a main component is formed, and a printed circuit board is manufactured by arranging elements. As a result, a printed circuit board having a high adhesion strength between the metal layer and the polymer layer and preventing the wiring from peeling off is manufactured.

  In order to manufacture a printed circuit board using the two-layer film according to the second embodiment, in the above-described printed circuit board manufacturing method, high purity nickel is used as a film material, etc. May be formed so as to contain 50 atom% or more of nickel atoms and 1 atom% or more of nitrogen atoms. By manufacturing the printed circuit board in this way, a printed circuit board with higher adhesion strength between the metal layer and the polymer layer and less peeling of the wiring is manufactured.

  Hereinafter, the effect of the two-layer film according to the present invention is confirmed by Examples and Comparative Examples. First, Examples 1 to 7 of the two-layer film according to the first embodiment will be described.

  A polyimide film (registered trademark: Kapton EN, manufactured by Toray DuPont) having a thickness of 38 μm, a width of 500 mm, and a length of 200 m is set in a vacuum chamber. The degree of vacuum is 0.04 Pa. Thereafter, sputtering was performed while nickel nickel was used as a target, nitrogen gas was supplied at 100% by volume and a gas flow rate of 200 ml / min was supplied into the vacuum chamber, thereby forming a first metal film. The first metal film contained 17 atomic% of nitrogen atoms as detected by the high resolution Rutherford backscattering spectrometry method. Moreover, the thickness was 20 nm. A copper film was formed on the surface of the first metal film by a vacuum deposition method to form a second metal film having a thickness of 200 nm. The prepared film was attached to a batch-type electrolytic plating tank to form a copper plating film (third metal film) having a thickness of 10 μm to produce a two-layer film.

  As in Example 1, a two-layer film was produced using a mixed gas containing 80% by volume of nitrogen gas and 20% by volume of argon gas. The first metal film contained 11 atomic% of nitrogen atoms as detected by the high resolution Rutherford backscattering spectrometry method.

  As in Example 1, a two-layer film was manufactured using a mixed gas containing 60% by volume of nitrogen gas and 40% by volume of argon gas. The first metal film contained 8 atomic% of nitrogen atoms as detected by the high resolution Rutherford backscattering spectrometry method.

  As in Example 1, except that a mixed gas containing 40% by volume of nitrogen gas and 60% by volume of argon gas was used, a two-layer film was produced. The first metal film contained 4 atomic% of nitrogen atoms according to detection by the high resolution Rutherford backscattering spectrometry method.

  As in Example 1, a two-layer film was produced using a mixed gas containing 20% by volume of nitrogen gas and 40% by volume of argon gas. The first metal film contained 2 atomic% of nitrogen atoms according to detection by the high resolution Rutherford backscattering spectrometry method.

  A polyimide film (registered trademark: Kapton EN, manufactured by Toray DuPont) having a thickness of 25 μm, a width of 500 mm, and a length of 200 m is set in the vacuum chamber. The degree of vacuum is 0.04 Pa. Then, using a mixed gas in which an alloy of nickel Ni and chromium Cr (Ni: Cr = 80: 20 wt%) is used, nitrogen gas is 60 vol%, and argon gas is 40 vol%, the gas flow rate is 140 ml / min. While supplying into the vacuum chamber, sputtering was performed to form a first metal film. The first metal film contained 10 atomic% of nitrogen atoms as detected by the high resolution Rutherford backscattering spectrometry method. Moreover, the thickness was 10 nm. A copper film was formed on the surface of the first metal film by a vacuum deposition method to form a second metal film having a thickness of 200 nm. The created film was attached to a batch-type electrolytic plating tank to form a copper plating film having a thickness of 10 μm to produce a two-layer film.

  As in Example 6, a two-layer film was manufactured using a mixed gas containing 20% by volume of nitrogen gas and 80% by volume of argon gas. The first metal film contained 5 atomic% of nitrogen atoms as detected by the high resolution Rutherford backscattering spectrometry method. Moreover, the thickness of the copper plating film was 18 μm.

In order to compare with Examples 1-7, the bilayer film was manufactured by the following Comparative Examples 1-8 which changed the gas to supply. In Comparative Examples 1-8, nitrogen in the mixed gas used in Examples 1-7 was replaced with oxygen to produce a two-layer film.
[Comparative Example 1]
A polyimide film (registered trademark: Kapton EN, manufactured by Toray DuPont) having a thickness of 25 μm, a width of 500 mm, and a length of 200 m is set in the vacuum chamber. The degree of vacuum is 0.04 Pa. Thereafter, sputtering was performed while nickel nickel was used as a target and oxygen gas was supplied at 100% by volume and a gas flow rate of 200 ml / min was supplied into the vacuum chamber to form a first metal film. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry. Moreover, the thickness was 20 nm. A copper film was formed on the surface of the first metal film by a vacuum deposition method to form a second metal film having a thickness of 200 nm. The created film was attached to a batch-type electrolytic plating tank to form a 18 μm thick copper plating film, and a two-layer film was produced.
[Comparative Example 2]
As in Comparative Example 1, a two-layer film was produced using a mixed gas containing 80% by volume of oxygen gas and 20% by volume of argon gas. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry.
[Comparative Example 3]
As in Comparative Example 1, a two-layer film was produced using a mixed gas containing 60% by volume of oxygen gas and 40% by volume of argon gas. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry.
[Comparative Example 4]
Similar to Comparative Example 1, except that a mixed gas containing 40% by volume of oxygen gas and 60% by volume of argon gas was used to produce a two-layer film. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry.
[Comparative Example 5]
As in Comparative Example 1, a two-layer film was manufactured using a mixed gas containing 20% by volume of oxygen gas and 80% by volume of argon gas. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry.
[Comparative Example 6]
A polyimide film (registered trademark: Kapton EN, manufactured by Toray DuPont) having a thickness of 25 μm, a width of 500 mm, and a length of 200 m is set in the vacuum chamber. The degree of vacuum is 0.04 Pa. Then, using a mixed gas in which an alloy of nickel Ni and chromium Cr (Ni: Cr = 80: 20 wt%) is used, oxygen gas is 60 volume%, and argon gas is 40 volume%, the gas flow rate is 140 ml / min. While supplying into the vacuum chamber, sputtering was performed to form a first metal film. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry. Moreover, the thickness was 10 nm. A copper film was formed on the surface of the first metal film by a vacuum deposition method to form a second metal film having a thickness of 200 nm. The created film was attached to a batch-type electrolytic plating tank to form a copper plating film having a thickness of 10 μm to produce a two-layer film.
[Comparative Example 7]
As in Comparative Example 6, a two-layer film was produced using a mixed gas containing 20% by volume of oxygen gas and 80% by volume of argon gas. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry. Moreover, the thickness of the copper plating film was 18 μm.
[Comparative Example 8]
As in Comparative Example 1, a two-layer film was produced using a mixed gas containing 50% by volume of nitrogen gas and 50% by volume of oxygen gas. The first metal film did not contain nitrogen atoms, as detected by high resolution Rutherford backscattering spectrometry.

  About the two-layer film manufactured by the method of said Examples 1-7 and Comparative Examples 1-8, the adhesive strength of the initial stage was measured. The adhesion strength was measured in accordance with the Japan Printed Circuits Industry Association, JPCA standard “copper-clad laminate for flexible printed wiring boards (adhesive and non-adhesive type)” JPCA-BM03-2003.

  In FIG. 4, the measurement result of the adhesive strength of the bilayer film of Examples 1-7 and Comparative Examples 1-8 is shown collectively. As is clear from FIG. 4, in the two-layer films of Examples 1 to 7, a high initial adhesion strength of 250 N / m or higher was shown in any case. On the other hand, in the comparative example, it is as low as less than 250 N / m. If the adhesion strength is less than 250 N / m, the copper thin film often peels off during electroplating, which is problematic for practical use. Therefore, a two-layer film including a first metal film formed by a vacuum film-forming method using a metal having a high nickel content in a mixed gas atmosphere of an inert gas and a nitrogen gas has practically high adhesion. It was shown to have strength. These first metal films contained 2 to 17 atomic% of nitrogen atoms as measured by the high resolution Rutherford backscattering spectrometry method.

It is sectional drawing of the two-layer film which is embodiment of this invention. (A) is a two-layer film in which a first metal film and a second metal film are formed on one side of a polymer film. (B) is a two-layer film in which a first metal film and a second metal film are formed on both surfaces of a polymer film. (C) is a two-layer film in which a first metal film and a second metal film are formed on one surface of a polymer film, and a third metal film is further formed. It is a schematic cross section of the manufacturing apparatus of a two-layer film. It is a flowchart explaining the example of the manufacturing method of the printed circuit board using a two-layer film. It is the figure which put together the measurement result of the adhesive strength in the two-layer film of the Example by the 1st Embodiment of this invention, and a comparative example.

Explanation of symbols

1-3 Bilayer film 10 Polymer film 12 First metal film 14 Second metal film 16 Third metal film 22 Target 23 (deposition material) container 24 Deposition material 31 Rollers 32, 32 Guide rollers (film running) apparatus)
33 Vacuum tank 34 Intake pipe (vacuum device)
35 Vacuum pump (vacuum equipment)
36, 37 Refrigerant piping 38 Sputtering system (metal ionizer)
41 Raw fabric 42 Product roll 43 Nitrogen gas pipe (nitrogen gas supply device)
44 Discharge port (nitrogen gas supply device, inert gas supply device)
45 Nitrogen gas valve (nitrogen gas supply device)
46 Inert gas pipe (inert gas supply device)
47 Inert gas valve (inert gas supply device)
r Refrigerant

Claims (12)

A polymer film;
A first film containing 60 wt% or more and 100 wt% or less of nickel formed on the polymer film by a vacuum deposition method, an ion plating method or a sputtering method in a mixed gas atmosphere of an inert gas and a nitrogen gas. With a metal film;
A second metal film mainly composed of copper formed on the first metal film;
Two-layer film. A polymer film;
On the polymer film, nickel atoms are formed in a mixed gas atmosphere of an inert gas and a nitrogen gas by a vacuum deposition method, an ion plating method, or a sputtering method. A first metal film containing 1 atom% or more and 50 atom% or less;
A second metal film mainly composed of copper formed on the first metal film;
Two-layer film. The adhesion strength between the polymer film and the first metal film is an initial 250 N / m or more;
The two-layer film according to claim 1 or 2. The polymer film is formed of a polymer containing nitrogen atoms;
The two-layer film according to any one of claims 1 to 3. The polymer containing nitrogen atoms includes any one of the group consisting of polyimide, polyetherimide, polyamideimide and aramid;
The two-layer film according to claim 4. The thickness of the first metal film is 3 nm or more and 100 nm or less;
The thickness of the second metal film is 20 nm or more and 5000 nm or less;
The two-layer film according to any one of claims 1 to 5. On the second metal film, a third metal film mainly composed of copper was formed by an electrodeposition method or an electroless plating method;
The two-layer film according to any one of claims 1 to 6. Setting the mixing ratio of inert gas and nitrogen gas;
Forming a first metal film containing 60 wt% or more and 100 wt% or less of nickel on a polymer film by a vacuum deposition method, an ion plating method, or a sputtering method in a mixed gas atmosphere of the above mixing ratio; ;
Forming a second metal film mainly composed of copper on the first metal film;
A method for producing a two-layer film. Setting the mixing ratio of inert gas and nitrogen gas;
On a polymer film, nickel atom is contained in an amount of 50 atom% or more and 99 atom% or less and nitrogen atom is 1 atom by vacuum deposition, ion plating or sputtering in a mixed gas atmosphere of inert gas and nitrogen gas. Forming a first metal film containing no less than 50% and no more than 50 atomic percent;
Forming a second metal film mainly composed of copper on the first metal film;
A method for producing a two-layer film. The mixed gas contains 20% by volume or more and less than 100% by volume of nitrogen gas;
The manufacturing method of the two-layer film of Claim 8 or Claim 9. A step of producing a two-layer film by the method for producing a two-layer film according to any one of claims 8 to 10;
Forming a print pattern on the two-layer film produced by the two-layer film production method;
Arranging a device on the two-layer film on which the print pattern is formed;
A method for manufacturing a printed circuit board. A two-layer film production apparatus for forming a metal film on a polymer film, comprising:
A film running device for running a polymer film;
A metal ionizer for heating the metal or applying an electrode to the metal;
A vacuum chamber containing the film traveling device and the metal ionization device;
A vacuum device for evacuating the vacuum chamber;
A nitrogen gas supply device for supplying nitrogen gas to the vacuum chamber;
An inert gas supply device for supplying an inert gas to the vacuum chamber;
Two-layer film manufacturing equipment.

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