JP2007243086A - Exposure mask, wafer holder and proximate exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a proximate exposure apparatus (100) in which resist films (19f, 19g) at a projecting edge portion affects neither an exposure mask (30) nor a crystal wafer (10) itself. <P>SOLUTION: A proximate exposure apparatus (100) performs proximately exposes a pattern of the exposure mask (30) on a crystal wafer (10) coated with a resist (19) and including an edge portion. The proximate exposure apparatus (100) then comprises a groove portion (35) of the exposure mask (30) covered with a light shielding part (32) at a position corresponding to the edge portion of the crystal wafer (10) and a wafer holder (114) holding the crystal wafer (10) and locating its outer peripheral portion inside rather than the edge of the crystal wafer (10). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an exposure mask used for a piezoelectric vibration device or a micromachine, a substrate holder for holding a substrate such as a quartz wafer, and a proximity exposure apparatus using the exposure mask and the substrate holder.

  In recent years, with the increase in the frequency of various communication devices or the increase in the operating frequency of electronic devices such as personal computers, the frequency of piezoelectric vibration devices such as tuning forks for angular velocity sensors, crystal resonators or crystal filters has also been increased. Response to is required.

  When manufacturing such a piezoelectric vibration device, a photolithography technique and a wet etching technique using a proximity exposure apparatus that performs proximity exposure transfer of a pattern of an exposure mask onto a quartz wafer are used. For example, in Patent Document 1, when an electrode is formed on a crystal wafer for a piezoelectric vibration device, a positive or negative photoresist film (hereinafter referred to as a resist film) is applied to a metal thin film provided on a crystal piece for a piezoelectric vibration device. Apply and expose. After development, unnecessary portions of the metal film are wet etched to form each electrode pattern.

  With the increase in frequency of piezoelectric vibration devices, the accuracy of processing dimensions is increasing. In order to meet processing accuracy requirements, the exposure mask and the quartz wafer tend to be as close as possible. This is because, when the mask and the quartz wafer are brought close to each other, the resolution is improved because the light beam from the illumination light is not blurred. However, the following problems arise.

  First, the resist film applied to the quartz wafer is attached to the mask, and the exposure mask becomes dirty. In particular, the resist film on the periphery of the quartz wafer tends to rise and become thick, and the corresponding mask area on the periphery of the quartz wafer tends to become dirty. If the wafer is not subjected to wet etching, the peripheral exposure as described in Patent Document 2 is usually performed and the resist film at the peripheral portion can be peeled off. I can't do it.

Further, when the quartz wafer with the raised resist film on the periphery comes into contact with the mask, a crack may occur in the periphery of the quartz wafer. When a crack is generated in the quartz wafer, there is a problem that the piezoelectric vibration device becomes defective. Furthermore, once the resist film adheres to the vacuum chuck or the like, the resist film enters between the next mounted quartz wafer and the vacuum chuck, and the flatness of the quartz wafer cannot be secured, and the peripheral portion of the quartz wafer is It will warp. If the exposure is performed in this state, the exposure accuracy deteriorates. Therefore, every time the resist film adheres to the vacuum chuck or the like, the exposure operation must be stopped and the cleaning operation must be performed.
JP 2005-134364 A JP-A-11-219894

  Therefore, the present invention has been made in view of the above circumstances, and prevents the raised peripheral edge resist film from affecting the exposure mask and the wafer itself. Specifically, an object of the present invention is to provide an exposure mask and wafer holder that do not affect the resist film on the raised peripheral edge, and a proximity exposure apparatus including these.

The exposure mask of the first aspect is used when proximity exposure is performed on an exposure substrate coated with a photosensitive agent and having a peripheral edge. The exposure mask has a groove portion covered with a light shielding portion at a position corresponding to the peripheral edge portion of the exposure substrate.
With this configuration, even if the exposure mask and the exposure substrate are brought close to each other, the raised peripheral edge resist film does not adhere to the exposure mask. Therefore, the exposure mask does not come into contact with the exposure substrate through the resist film, and the exposure substrate is not cracked. Further, it is possible to perform exposure with high working efficiency and high resolution.

The substrate holder according to the second aspect holds an exposure substrate having a peripheral portion with a photosensitive agent applied to the back surface. The outer periphery of the substrate holder is inside the peripheral edge of the exposure substrate.
With this configuration, even in double-sided exposure in which a resist film is applied to the first and second surfaces of the exposure substrate, the raised peripheral edge resist film does not adhere to the substrate holder. Therefore, it is possible to perform exposure with high working efficiency and high resolution.

A proximity exposure apparatus according to a third aspect performs proximity exposure of an exposure mask pattern on an exposure substrate coated with a photosensitive agent and having a peripheral edge. The proximity exposure apparatus includes a groove portion of the exposure mask covered with a light shielding portion at a position corresponding to the peripheral edge portion of the exposure substrate, and a substrate holder that holds the exposure substrate and whose outer peripheral portion is inside the peripheral edge portion of the exposure substrate. .
With this configuration, even when the exposure mask and the exposure substrate are brought close to each other, the raised peripheral edge resist film does not adhere to the exposure mask, and both sides are coated with the resist film on the first surface and the second surface of the exposure substrate. Even during exposure, the raised peripheral edge resist film does not adhere to the substrate holder. Therefore, the exposure substrate is not cracked, and the work efficiency is good and the exposure can be performed with high resolution.

7. The proximity exposure apparatus according to claim 6, wherein the corner of the groove portion is rounded so as to prevent peeling of the light shielding portion.
For this reason, it can prevent that an exposure board | substrate will be exposed by unnecessary illumination light by peeling of a light-shielding part.

In the proximity exposure apparatus according to the fifth aspect, the substrate holder expands and contracts according to the diameter of the exposure substrate.
For this reason, it can respond to exposure substrates of many sizes.

In a fifth aspect, the proximity exposure apparatus according to the sixth aspect comprises a central chuck portion in which the substrate holder is disposed at the central portion, and an outer chuck portion that is disposed outside the central chuck portion.
For this reason, even if the outer chuck portion extends in accordance with the diameter of the exposure substrate, the central chuck supports the exposure substrate, so that the central portion of the exposure substrate is not dented during vacuum suction.

  In a seventh aspect, the exposure substrate includes a quartz wafer. In particular, a quartz wafer cannot be dry-etched and is easy to break, so it has a great effect.

  The exposure mask according to the present invention, the substrate holder, and the proximity exposure apparatus using them, the raised peripheral edge resist film does not adhere to the exposure mask even when the exposure mask and the exposure substrate are brought close to each other, and the raised peripheral edge Part of the resist film does not adhere to the substrate holder. For this reason, accurate exposure is possible in the proximity exposure.

  Hereinafter, an embodiment of the present invention will be described using a quartz wafer 10. In the following embodiments, for convenience of explanation, a substrate on which a positive or negative photoresist film (hereinafter referred to as a resist film) that is a photosensitive agent is applied is referred to as a quartz wafer 10, and no resist film is applied. The substrate in the state is called a quartz substrate 11.

<Configuration of Proximity Exposure Apparatus 100>
FIG. 1 is a side sectional view showing a configuration example of a proximity exposure apparatus 100 used when a predetermined pattern of an exposure mask 30 as an original plate is exposed onto a quartz wafer 10 as an exposure substrate. This proximity exposure apparatus 100 includes an exposure light source 101 that irradiates a short wavelength light beam, for example, an illumination light IL of 300 nm, and a condenser lens that guides parallel light to the exposure mask 30 from the illumination light IL irradiated from the exposure light source 101. The illumination optical system 103 includes 103L1 and 103L2. Further, the proximity exposure apparatus 100 includes a mask stage 105 that holds the exposure mask 30 and is movable in the XY plane, a vacuum chuck 114 that vacuum-sucks the crystal wafer 10, and a wafer stage 112 that includes the vacuum chuck 114. Yes. The wafer stage 112 can be moved in the rotation direction about the X-axis direction, the Y-axis direction, and the Z-axis on the XY plane on the base 110 by a user operation. The wafer stage 112 is also movable in the Z direction, and the interval L between the crystal wafer 10 and the exposure mask 30 can be finely adjusted. Specifically, it can be adjusted so that it can approach from 1 micron to several tens of microns.

  A vacuum chuck drive control device 126 is connected to the vacuum chuck 114. The vacuum chuck drive control device 126 holds the crystal wafer 10 in a vacuum chuck 114 so that the crystal wafer 10 can be held or removed by vacuum suction or releasing the vacuum. The vacuum chuck drive control device 126 can change the diameter of the vacuum chuck 114 according to the diameter of the crystal wafer 10. This will be described later with reference to FIGS.

  The proximity exposure apparatus 100 is provided with an alignment camera 120 adjacent to the illumination optical system 103. The alignment camera 120 has an alignment objective lens 122 (122A, 122B), a so-called microscope. The user observes the images from the alignment objective lenses 122A and 122B to align the quartz wafer 10 and the exposure mask 30. The alignment camera 120 is provided with a CCD 123 (123A, 123B) that is a photoelectric conversion element that divides the light from the alignment objective lens 122 and converts the light into electricity. As indicated by an arrow 129, the alignment camera 120 is arranged above the exposure mask 30 when aligning the crystal wafer 10 and the exposure mask 30, and a predetermined pattern of the exposure mask 30 is obtained. Is exposed from above the exposure mask 30 when the quartz wafer 10 is exposed.

<Configuration of Quartz Wafer 10>
2A and 2B are perspective views showing the configuration of the crystal wafer 10 used in this embodiment. The quartz wafer 10 is composed of a quartz substrate 11 made of an artificial quartz having a thickness of 0.36 mm, and the diameter of the quartz substrate 11 is 3 inches or 4 inches. Further, as shown in FIG. 2A, an orientation flat 11C for specifying the crystal direction of the crystal is formed on a part of the crystal substrate 11. Further, as shown in FIG. 2B, notches 11D may be formed in a part of the quartz substrate 11 in order to specify the crystal direction of the quartz instead of the orientation flat 11C. In the following embodiment, a description will be given using a crystal wafer 10 having an orientation flat 11C shown in FIG. 2A.

  FIG. 3 shows a cross-sectional view of the crystal wafer 10 used in this embodiment. FIG. 3A is a cross-sectional view of a quartz wafer 10A that exposes and processes both the front and back surfaces. FIG. 3B is a cross-sectional view of a quartz wafer 10B that exposes and processes only one surface. Each figure is exaggerated and is different from the actual dimensional ratio.

  In the quartz wafer 10A in FIG. 3A, metal thin films are formed on both surfaces of the quartz substrate 11 in order to form electrodes of a piezoelectric vibration device. For example, in FIG. 3A, a thin film of chromium 17 is formed on the front and back surfaces of the quartz substrate 11 by sputtering. A thin film of gold 15 is further formed on the upper surface by sputtering. Then, in order to expose the quartz wafer 10 with the illumination light IL, a resist film 19 is applied to the outside of the thin film of the gold 15 of the quartz wafer 10.

  In the quartz wafer 10B of FIG. 3B, a metal thin film is formed on one side of the quartz substrate 11 in order to form electrodes of a piezoelectric vibration device. A thin film of chromium 17 is formed by sputtering only on the surface of the quartz substrate 11, and a thin film of gold 15 is further formed by sputtering on the upper surface. Then, in order to expose the quartz wafer 10 with the illumination light IL, a resist film 19 is applied to the outside of the thin film of the gold 15 of the quartz wafer 10.

  The resist film 19 is applied by a spray coating method in which a resist ink adjusted to a viscosity suitable for application is atomized with a spray gun to obtain a coating film on the quartz substrate 11, and the resist ink is applied onto the rotating quartz substrate 11. There is a spin coating method in which a few drops are dropped and the pigment coating is spread and applied to the entire surface of the disk by the centrifugal force. Further, a curtain coating method in which resist ink is applied to the entire surface of the substrate by dropping a low-viscosity resist ink into a curtain shape and passing the crystal substrate 11 therein, and the crystal substrate 11 is once immersed in a tank of resist ink. There is also a dip coating method that pulls up and pulls up.

  The resist film 19 may be applied to the quartz wafer 10A and the quartz wafer 10B by any of these coating methods. However, in any method, the resist film 19 tends to be thickly applied (swelled) at the peripheral portion of the quartz substrate 11. Specifically, the thick resist film portion 19f and the resist film portion 19g of the quartz wafer 10A of FIG. 3A correspond to the thick resist film portion 19h of the quartz wafer 10B of FIG. 3B.

<Configuration of exposure mask 30>
FIG. 4A is a plan view showing a configuration example of the square exposure mask 30. This exposure mask 30 is formed by forming a light exposure mask light-shielding film 32 made of chrome on a top surface of a transparent exposure mask glass substrate 31 made of synthetic quartz glass, and includes an alignment mark 33 and a piezoelectric vibration device. A working pattern 34 is formed. In the central region of the exposure mask light-shielding film 32, 38 rectangular piezoelectric vibration device patterns 34 of 5 mm × 10 mm are patterned in parallel to each side of the exposure mask 30. Furthermore, cross-shaped alignment marks 33S and 33T are patterned on both sides of the piezoelectric vibration device pattern 34. Each piezoelectric vibration device pattern 34 is positioned with reference to the alignment mark 33S.

  Around the piezoelectric vibration device pattern 34, a groove 35 matching the shape of the peripheral edge of the crystal wafer 10 is formed. When the diameter of the quartz substrate 11 is 3 inches, a groove 35 is formed on the mask side in accordance with the size of 3 inches, and when the diameter of the quartz substrate 11 is 4 inches, the groove 35 is recessed on the mask side. Is formed. Further, a groove 35 is formed in accordance with the orientation flat 11C as shown in FIG. 2A or the crystal wafer 10 in which the notch 11D as shown in FIG. 2B is formed. The depth of the groove is about 1 mm at the deepest position, and the groove width is about 4 mm to about 5 mm.

  4B and 4C are cross-sectional views of the groove portion 35 of the exposure mask 30. FIG. It is a top view which shows the example of a structure. It is necessary to form the exposure mask light shielding film 32 also in the groove portion of the glass substrate 31, but if the corner portion of the groove 35 is a right angle, the exposure mask light shielding film 32 may not be formed in the corner portion, Even if it is formed, the exposure mask light-shielding film 32 at the corners may be peeled off while the exposure mask 30 is being used. For this reason, the corner of the groove 35-1 in FIG. 4B is linearly chamfered, and the corner of the groove 35-2 in FIG. 4C is chamfered on a curve, both of which are rounded.

<Configuration of vacuum chuck 114>
FIG. 5A is a plan view of the vacuum chuck 114 and the wafer stage 112 as viewed from above, and FIG. 5B is a plan view of the crystal wafer 10 placed on the vacuum chuck 114. The vacuum chuck 114 includes a central circular chuck member 114d, three fan-shaped chuck members 114a disposed around the vacuum chuck 114d, and a trapezoidal chuck member 114c aligned with the orientation flat 11C.

  Each of the chuck members 114a, 114c, and 114d is made of a metal such as stainless steel or a porous ceramic made of alumina or the like, and is formed with a plane parallelism of 2 μm or less on each surface. Further, the chuck members 114a, 114c and 114d as a whole are formed with a plane parallelism within 5 μm. Except for the central circular chuck member 114d, the chuck member 114a and the chuck member 114c are movable along the guide member 114b. The chuck members 114a and 114c are driven by an air silinger or drive motor 128 (see FIG. 8). The positions of the chuck members 114a and 114c are confirmed by a position sensor 127 (see FIG. 8).

  FIG. 5A shows a state in which the chuck member 114a and the chuck member 114c are extended to the outermost periphery side. At this time, even if the quartz wafer 10 having a diameter of 4 inches is placed as shown in FIG. 5B, the outer peripheral portions of the chuck member 114a and the chuck member 114c are inward (from the center) from the peripheral portion of the crystal wafer 10. Yes. Specifically, the outer peripheral portions of the chuck member 114 a and the chuck member 114 c are located about 4 mm to about 5 mm inward from the peripheral portion of the crystal wafer 10.

  FIG. 6A shows a state where the chuck member 114a and the chuck member 114c are contracted to the centermost side. At this time, even if the quartz wafer 10 having a diameter of 3 inches is placed as shown in FIG. 6B, the outer peripheral portions of the chuck member 114a and the chuck member 114c are inward (from the center) from the peripheral portion of the crystal wafer 10. Yes. Similarly to the above, the outer peripheral portions of the chuck member 114a and the chuck member 114c are located about 4 mm to about 5 mm inward from the peripheral portion of the crystal wafer 10.

  The chuck members 114a, 114c and 114d may be made of metal or ceramic with a vacuum groove. Although not shown in FIGS. 5 and 6, lift pins are provided in places other than the moving chuck members 114 a, 114 c and 114 d for loading and unloading the crystal wafer 10.

<Operation of proximity exposure>
FIG. 7 is a flowchart for performing exposure using the proximity exposure apparatus 100 of the present embodiment. FIG. 8 is a cross-sectional view of the exposure mask 30 and the wafer stage 112 on which the quartz wafer 10 is attracted by the vacuum chuck 114 as viewed from the side. The flowchart of FIG. 7 will be described below with reference to FIG.

  7, the exposure mask 30 corresponding to the diameter of the quartz wafer 10 is placed on the mask stage 105 with the light shielding part 32 facing the wafer stage 112 side. As shown in FIG. 8, grooves 35 are formed corresponding to the peripheral edge of the crystal wafer 10 so as not to contact the raised resist film portion 19 f of the crystal wafer 10.

  Next, in step S52, the diameter of the quartz wafer 10 is confirmed. When the wafer is automatically transferred from a wafer loader (not shown), the orientation flat 10C of the crystal wafer 10 is confirmed around the wafer loader, and a signal from a detection unit for confirming the diameter of the crystal wafer 10 is received. The diameter of the quartz wafer 10 is confirmed. When the exposure mask 30 is placed on the mask stage 105, the diameter of the crystal wafer 10 is known, so that the diameter of the crystal wafer 10 is 3 inches by hand with respect to the proximity exposure apparatus 100. It may be set whether or not. When the diameter of the crystal wafer 10 is 3 inches, the process proceeds to Step S53 and Step S54, and when the diameter of the crystal wafer 10 is 4 inches, the process proceeds to Step S55 and Step S56.

  In step S53, it is confirmed by the position sensor 127 shown in FIG. 8 whether the vacuum chuck 114 is contracted for 3 inches. That is, the position sensor 127 sends a signal to the vacuum chuck drive controller 126 as to whether or not the chuck member 114a and the chuck member 114c are at the 3-inch wafer position. If the chuck member 114a and the chuck member 114c are at the 3-inch wafer position, the vacuum chuck drive control device 126 sends a permission signal to a wafer loader (not shown). If the chuck member 114a and the chuck member 114c are not located at the 3-inch wafer position, in step S54, the vacuum chuck drive control device 126 issues a command to the drive motor 128 to move the chuck member 114a and the chuck member 114c to the 3-inch wafer. Move to position.

  In step S55, it is confirmed by the position sensor 127 shown in FIG. 8 whether or not the vacuum chuck 114 is contracted for 4 inches. The position sensor 127 sends a signal to the vacuum chuck drive controller 126 as to whether or not the chuck member 114a and the chuck member 114c are at the 4-inch wafer position. If the chuck member 114a and the chuck member 114c are at the 3-inch wafer position, the process proceeds to step 57. If the chuck member 114a and the chuck member 114c are not at the 4-inch wafer position, in step S56, the vacuum chuck drive control device 126 issues a command to the drive motor 128 to move the chuck member 114a and the chuck member 114c to the 4-inch wafer. Move to position.

  If the relationship between the diameter of the quartz wafer 10 and the outer periphery of the vacuum chuck 114 is appropriate, the quartz wafer 10 is placed on the vacuum chuck 114 in step S57. Then, in FIG. 8, vacuum suction is started via the vacuum pipe 114v connected to the vacuum pump. The vacuum pipe 114v and the chuck member 114a and the chuck member 114c are connected by flexible pipes, and are configured so that no vacuum leaks even if the chuck member 114a and the chuck member 114c move.

  When the crystal wafer 10 is vacuum-sucked, the outer peripheral portions of the chuck member 114a and the chuck member 114c are located about 4 mm to about 5 mm inward from the peripheral portion of the crystal wafer 10. For this reason, the raised resist film part 19g of the quartz wafer 10 does not adhere to the chuck member 114a and the chuck member 114c. Once the resist film adheres to a vacuum chuck or the like, the next crystal wafer 10 cannot be mounted without removing the resist film. This is because a resist film enters between the quartz wafer 10 and the vacuum chuck, and the flatness of the quartz wafer 10 cannot be ensured. Such a problem does not occur in this embodiment.

  In step S58, the wafer stage 112 is moved to the mask stage 105 side (in the Z direction) to bring the crystal wafer 10 and the exposure mask 30 as close as possible to each other with an interval L. Even if the quartz wafer 10 is brought closer to the exposure mask 30 than before, the resist film 19 does not adhere to the exposure mask 30. If the mask stage 105 has a mechanism for moving in the Z direction, the mask stage 105 may be moved to the quartz wafer 10 side (Z direction) instead of moving the wafer stage 112 in the Z direction.

  In step S <b> 58, the quartz wafer 10 is aligned with the exposure mask 30 using the alignment camera 120. Next, the exposure mask 30 is irradiated with illumination light IL emitted from the exposure light source 101. Then, the quartz wafer is irradiated with parallel light from a portion of the exposure mask 30 that is not covered by the light shielding portion 32 to expose the resist film 19. When the exposure is completed, a valve disposed between the vacuum pipe 114v and the atmosphere is opened, and the crystal wafer 10 can be detached from the vacuum chuck 114.

  As described above, according to the present embodiment, proximity exposure with high resolution can be performed without making the exposure mask 30 dirty. Further, the surface of the vacuum chuck 114 is not soiled when both surfaces of the quartz wafer 10 are exposed. For this reason, when the crystal wafer 10 is next placed on the vacuum chuck 114, the resist film is not attached, so that the crystal wafer 10 can be adsorbed while maintaining flatness. The proximity exposure apparatus having the exposure mask 30 and the vacuum chuck 114 can perform exposure with high resolution while maintaining high flatness of the crystal wafer 10.

  In the above embodiment, the circular crystal wafer 10 has been described, but the present invention is not limited to this shape. For example, the present invention can be applied to a rectangular wafer. In this case, the groove 36 of the exposure mask 30 may be formed as shown in FIG. 9, and the vacuum chuck 114 may be expanded and contracted in a rectangular shape for a rectangular wafer. Further, although the description has been given with respect to the crystal wafer of 3 inches or 4 inches, it is needless to say that other sizes can be applied. Further, instead of the vacuum chuck 114 for adsorbing the quartz wafer 10, it is also possible to apply an electrostatic chuck that fixes the wafer by applying a voltage to the internal metal electrode to generate positive and negative charges on the surface of the wafer. It is.

  In the above embodiment, the quartz wafer for the piezoelectric vibration device has been described. However, the present invention is not limited to the piezoelectric vibration device. Furthermore, in the manufacture of DNA chips or micromachines, it may be necessary to form patterns on both the front and back surfaces of a glass substrate or silicon wafer. As described above, the present invention can be applied to a transmissive or non-permeable wafer such as a glass substrate or a silicon wafer instead of the quartz wafer.

1 is a conceptual diagram showing a configuration example of a proximity exposure apparatus 100 used when a quartz wafer 10 is exposed with a pattern of an exposure mask 30. FIG. A is a perspective view showing a configuration of the quartz wafer 10 having an orientation flat, and B is a perspective view showing a configuration of the quartz wafer 10 having a notch. A is a cross-sectional view of a quartz wafer 10A that exposes and processes both the front and back surfaces, and B is a cross-sectional view of a quartz wafer 10B that exposes and processes only one surface. A is a plan view showing a configuration example of a square exposure mask 30, and B and C are enlarged sectional views of a groove portion 35 of the exposure mask 30. A is a plan view of the vacuum chuck 114 and the wafer stage 112 as viewed from above, and B is a plan view of the quartz wafer 10 having a diameter of 4 inches placed on the vacuum chuck 114. A is a plan view of the vacuum chuck 114 and the wafer stage 112 as viewed from above, and B is a plan view of the quartz wafer 10 having a diameter of 3 inches placed on the vacuum chuck 114. It is a flowchart which performs exposure using the proximity exposure apparatus 100 of this embodiment. 4 is a cross-sectional view of the exposure mask 30 and the wafer stage 112 on which the crystal wafer 10 is adsorbed by a vacuum chuck 114 as viewed from the side. FIG. It is the figure which showed the groove structure of the mask at the time of exposing a rectangular wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Quartz wafer 19 ... Photoresist film 30 ... Mask 32 ... Chrome light shielding film 35 ... Mask groove part 34 ... Pattern 100 for piezoelectric vibration devices ... Proximity exposure apparatus 103 ... Illumination optical system 105 ... Mask stage 112 ... Wafer stage 114 ... Vacuum chuck 126 ... Vacuum chuck drive controller 127 ... Position sensor 128 ... Drive motor

Claims (10)

In the exposure mask used in the proximity exposure with respect to the exposure substrate coated with a photosensitive agent and having a peripheral portion,
The said exposure mask has a groove part covered with the light-shielding part in the position corresponding to the peripheral part of the said exposure board | substrate, The exposure mask characterized by the above-mentioned.   2. The exposure mask according to claim 1, wherein corners of the groove are rounded so as to prevent peeling of the light shielding part. In a substrate holder for holding an exposure substrate having a peripheral portion coated with a photosensitive agent on the back surface,
The substrate holder is characterized in that an outer peripheral portion of the substrate holder is located inside a peripheral portion of the exposure substrate.   The substrate holder according to claim 3, wherein the substrate holder expands and contracts according to a diameter of the exposure substrate.   The substrate holder includes a central chuck portion disposed in a central portion and an outer chuck portion disposed outside the central chuck portion, and the outer chuck portion expands and contracts according to the diameter of the exposure substrate. The substrate holder according to claim 4. In a proximity exposure apparatus that performs a proximity exposure on an exposure substrate having a peripheral portion coated with a photosensitive agent, the pattern of an exposure mask,
A groove portion of the exposure mask covered with a light shielding portion at a position corresponding to a peripheral edge portion of the exposure substrate;
A proximity exposure apparatus, comprising: a substrate holder that holds the exposure substrate and has an outer peripheral portion located inside a peripheral portion of the exposure substrate.   The proximity exposure apparatus according to claim 6, wherein corners of the groove portions are rounded so as to prevent peeling of the light shielding portions.   The proximity exposure apparatus according to claim 6, wherein the substrate holder expands and contracts according to a diameter of the exposure substrate.   The substrate holder includes a central chuck portion disposed in a central portion and an outer chuck portion disposed outside the central chuck portion, and the outer chuck portion expands and contracts according to the diameter of the exposure substrate. 9. The proximity exposure apparatus according to claim 6, wherein the proximity exposure apparatus is characterized. The proximity exposure apparatus according to claim 6, wherein the exposure substrate includes a quartz wafer.