JP2007242882A - Manufacturing method of light emitting device, and light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent reliability, yield, and derivation efficiency of light from being deteriorated by enabling fixation of cut debris of an element sealing resin layer to be severely restrained. <P>SOLUTION: A method comprises a first process wherein there is made hydrophylic the entire surface on a substrate 1 on the top surface of which an LED chip 2 is mounted, and which is sealed with a resin layer 3; and a second process wherein the resin layer and the substrate are cut by a dicing blade, at a position where an LED chip is avoided while flowing cleaning water on the surface of the resin layer and on the substrate after the substrate is made hydrophilic. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting device and a light emitting device, and more particularly to a dicing method for a light emitting device having a structure in which a semiconductor light emitting element is mounted on a substrate and sealed with a resin layer, and a resin sealing structure for the light emitting device. .

  When manufacturing a light-emitting device, as an example, there is a method in which a plurality of light-emitting elements are mounted on a wiring board and divided into individual light-emitting devices from a state of being sealed (covered) by a resin layer. When cutting the resin layer and wiring board for this division, the frictional heat generated by cutting with a dicing blade is usually removed, the lubricity is imparted, and the cutting waste derived from the resin and the board is removed. For the purpose, etc., cutting waste is washed away by flowing pure water near the cutting part from a nozzle opened near the dicing blade.

  However, a part of the cutting part or the substrate surface may be temporarily dried, and in the dry region, the resin cutting waste adheres to and adheres to the cut surface of the resin layer or the wiring pattern on the substrate, The cutting waste remains on the light emitting device after the substrate division. As a result, there is a problem that the reliability and yield of the light emitting device are likely to be lowered, and the extraction efficiency is particularly lowered when light is extracted from the upper surface and side surfaces of the LED chip.

In Patent Documents 1 and 2, etc., the yield after assembly of the device is improved by preventing sticking of cutting waste generated during dicing for dividing the semiconductor wafer after element formation into chips onto the device. Technology is disclosed. For example, in Patent Document 1, the wafer surface is hydrophilized by O ₂ plasma treatment, and then dicing is performed while flowing pure water on the wafer surface, whereby the cutting waste is washed away. At this time, a dry region is not generated on the wafer surface during dicing, and the cutting waste can be effectively removed.
Japanese Patent Laid-Open No. 5-335412 JP 2005-203679 A

  However, the dicing process of a semiconductor wafer as described above is different from the process of dividing a light emitting device from a state where a plurality of light emitting elements are mounted on a substrate and sealed by a resin layer, and an element sealing resin layer There is no room for generation of cutting scraps, and it is not particularly necessary to take measures for cutting scraps on the substrate itself on which the light emitting element is mounted and a resin layer suitable for sealing the light emitting element.

  The inventor cuts the resin layer and the substrate when cutting the resin layer and the substrate in order to divide the light emitting device from the state where a plurality of light emitting elements are mounted on the substrate and sealed by the resin layer. It is important to take appropriate measures against problems such as sticking to the cut surface of the resin layer and the wiring pattern on the substrate, reducing the reliability of the light emitting device, and significantly reducing the light extraction efficiency from the light emitting element chip I felt.

  Therefore, the present invention has been made in view of the above circumstances, and can sufficiently suppress the sticking of cutting scraps of the element sealing resin layer, thereby preventing a decrease in reliability, yield, and light extraction efficiency. It is an object of the present invention to provide a method for manufacturing a light emitting device to be obtained.

  Another object of the present invention is to provide a light emitting device that can prevent a decrease in reliability and yield, and in particular, a decrease in light extraction efficiency.

  A method of manufacturing a light emitting device according to the present invention is a method of manufacturing a light emitting device in which a light emitting element is mounted on a substrate and the light emitting element is sealed with a translucent resin layer, and the light emitting element is mounted on an upper surface. A first step of performing a hydrophilic treatment on the entire surface of the substrate sealed with a resin layer, and avoiding the light emitting element while flowing cleaning water over the surface of the resin layer and the substrate after the hydrophilic treatment. A second step of cutting the resin layer and the substrate at a position and dividing the resin layer and the substrate into light-emitting devices. Here, there are a case where the resin layer and the substrate are sequentially cut by separate dicing blades, and a case where the resin layer and the substrate are successively cut by the same dicing blade.

  The light emitting device of the present invention is a light emitting device comprising a light emitting element, a substrate on which the light emitting element is mounted, and a light emitting element in which the light emitting element on the substrate is sealed, wherein the substrate and the resin layer are The surface is hydrophilized and has end faces that are cut after the resin sealing of the light emitting element. Here, in the resin layer and the substrate, when the respective cut end surfaces are aligned, when the end surface of the resin layer is receded to the light emitting element side from the end surface of the substrate, the end surface of the resin layer is more than the end surface of the substrate It may be protruding.

  According to the method of manufacturing a light emitting device of claim 1, dicing is performed after the light emitting element is mounted on the upper surface and the entire surface of the substrate in which the light emitting element chip is sealed with the resin layer is subjected to a hydrophilic treatment. Therefore, it is possible to prevent the chips generated by the resin layer and the substrate during dicing from adhering to the surfaces of the resin layer and the substrate, and it is possible to manufacture a light emitting device with significantly improved reliability and yield. One-stage dicing can shorten the time required for manufacturing than two-stage dicing.

  According to the manufacturing method of claim 2, it is possible to easily perform the hydrophilic treatment by plasma treatment.

  According to the manufacturing method of claim 3, when the resin layer and the substrate are cut, first, the resin layer is cut by the first dicing blade, and then the substrate is cut by the second dicing blade. An appropriate dicing blade can be used depending on the object to be cut.

  According to the manufacturing method of claim 4, by making the thickness of the first dicing blade thicker than the thickness of the second dicing blade, the end surface of the resin layer is retracted to the light emitting element side from the end surface of the substrate. Maintained in a state. In this case, the cutting waste generated at the time of cutting is less likely to adhere to the boundary portion between the substrate and the resin layer, preventing a decrease in reliability and yield, and in particular, a decrease in light extraction efficiency. Even if the resin layer expands due to heat or the like after cutting, the cut surface is aligned with the cut surface of the substrate. Thus, there is no possibility that the end face of the resin layer protrudes outside the end face of the substrate, and the size of the light emitting device can be maintained within the standard.

  According to the manufacturing method of claim 5, when the resin layer and the substrate are cut, the resin layer and the substrate are continuously cut by the same dicing blade, so that the resin layer and the substrate can be easily and quickly. Can be cut with.

  According to the light emitting device of claim 6, since the surfaces of the substrate and the resin layer are subjected to a hydrophilic treatment, and each end face of the substrate and the resin layer cut after the resin sealing of the light emitting element is aligned, Light emitting devices can be mounted with high density. This is because the resin layer does not protrude from the substrate, so that even when the substrate is mounted at a high density, adjacent resin layers do not interfere with each other.

  According to the light emitting device of claim 7, the surfaces of the substrate and the resin layer are subjected to a hydrophilic treatment, and among the end surfaces of the substrate and the resin layer cut after the resin sealing of the light emitting element, the end surface of the resin layer is Since it is retracted to the light emitting element side from the end face of the substrate, there is no possibility that the end face protrudes outside the end face of the substrate even if the resin layer expands due to heat or the like, and the size of the light emitting device is maintained within the standard. be able to.

  According to the light emitting device of the eighth aspect, when the light emitted from the light emitting element is transmitted through the resin layer, the transmission distance can be increased. When the resin layer contains a fluorescent substance, the color tone can be changed.

  According to the light emitting device of claim 9, since the resin layer is made of silicone resin, and the surface of the resin layer is modified into glass by plasma treatment, the cutting waste generated at the time of cutting is removed from the substrate and the resin layer. It is difficult to adhere to the surface of the glass, and it is possible to prevent a decrease in reliability and yield, and in particular, it is possible to prevent a decrease in light extraction efficiency.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this description, common parts are denoted by common reference numerals throughout the drawings.

The number of chips adhering to the substrate and the end face of the resin layer is preferably 0 / mm ² of chips of 10 μm or more. By defining the number of chips attached to the end surfaces of the substrate and the resin layer, it is possible to prevent the light extraction efficiency from being lowered.

  Preferably, the light emitting element is a light emitting diode chip, and the resin layer is a silicone resin. By using a combination in which the light emitting element is a light emitting diode chip and the resin layer is a silicone resin, the present invention can be easily applied to a practical product.

  A fluorescent material may be mixed in the resin layer. This makes it possible to obtain a desired mixed color emission according to the combination of the emission color of the light emitting element and the emission color of the fluorescent material. Further, by changing the content or type of the fluorescent substance, it is possible to expand the realizable color tone range. In addition, the color tone can be easily adjusted by adjusting the film thickness of the resin.

<First Embodiment>
1 to 3 are a part of a manufacturing process of an LED device according to the first embodiment of the light emitting device of the present invention, and a resin for sealing a plurality of LED chips mounted on a substrate with a resin. An example of the sealing process, the hydrophilic treatment process after sealing, and the cutting process of the resin layer and the substrate is schematically shown. 4A and 4B schematically show an example of a cross-sectional structure of an LED device obtained by dividing a resin layer and a substrate. 1 to 4, 1 is a substrate, 2 is an LED chip, 3 is a resin that is curable and translucent by light or heat, 4 is a first dicing blade, and 5 is a second dicing blade. It is. Here, the dicing blade (dicing saw) has a cutting edge made of diamond, for example, and cuts the resin layer and the substrate as will be described later by rotation thereof.

  Next, the manufacturing process of the LED device will be described in detail with reference to FIGS. First, as shown in FIG. 1, a plurality of LED chips 2 are mounted on a large substrate 1 in, for example, a matrix arrangement. At this time, when the LED chip 2 is mounted in a face-down state, for example, the wiring pattern portion on the substrate and the electrode portion of the LED chip are flip-chip connected so as to be bonded via a metal bump (not shown). . Alternatively, when the LED chip 2 is mounted face up, the electrode part of the LED chip and the wiring pattern part on the substrate 1 are connected via a conductive bonding wire (not shown).

  Next, the resin layer 3 is screen-printed, for example, and the outer surface of the LED chip 2 is sealed. In this way, the entire surface of the substrate 1 in a state where the LED chip 2 is sealed with the resin layer 3 is subjected to a hydrophilic treatment. At this time, for example, when a silicone resin layer is used and the hydrophilic treatment is performed by plasma treatment, the surface of the resin layer is modified into a glass shape.

  After the hydrophilization treatment, for example, the resin layer and the substrate are diced at a planned cutting position indicated by a dotted line A in FIG. 1, and divided into a plurality of LED devices. At this time, first, as shown in FIG. 2A, the resin layer is placed at the planned cutting position where the LED chip 2 is avoided while flowing cleaning water (usually pure water) through the cutting portion on the surface of the resin layer at the planned cutting position. Cut by the first dicing blade 4. Thereafter, the first dicing blade 4 is pulled up. At this time, the resin layer is pushed by the dicing blade at the time of cutting and shrinks a little, but when the first dicing blade 4 is pulled up, as shown in FIG. A gap is generated corresponding to the cut portion.

  Next, as shown in FIG. 3, the second dicing blade 5 is used in place of the first dicing blade 4, and cleaning water is made to flow again through the cutting portion on the substrate surface at the planned cutting position. After cutting the entire substrate in the thickness direction to cut the substrate, the second dicing blade 5 is pulled up.

  As described above, when the resin layer and the substrate are divided, the entire surface is subjected to a hydrophilic treatment, so that the cleaning water always flows while uniformly spreading on the resin layer surface and the substrate surface, and a local dry region is formed. There is no generation, and the cutting waste generated in the vicinity of the cutting portion is immediately carried away on the water stream. Therefore, since the resin layer and the cutting scraps of the substrate do not adhere to and adhere to the cut surface of the resin layer or the wiring pattern on the substrate, the yield of the LED device is improved without significantly reducing the light extraction efficiency. be able to.

Further, the hydrophilization treatment is not limited to Ar plasma, and O ₂ plasma, H ₂ plasma, N ₂ plasma, atmospheric plasma, UV ozone cleaning, etc. are appropriately selected according to the material of the substrate and the resin layer. You may use. Further, after cutting the substrate by cutting with the second dicing blade, the substrate may be further cut between each row of the LED chip array on the substrate as indicated by a dotted line B in FIG. . Further, when cutting the substrate, depending on the material of the substrate, a cutting groove may be formed halfway in the thickness direction of the substrate, and then the final division of the substrate may be performed collectively by mechanical breakage.

  Further, when the resin layer and the substrate are divided, the thickness of the first dicing blade is made larger than the thickness of the second dicing blade, so that even if the resin layer expands due to heat or the like after cutting, FIG. The state in which the cut surface of the resin layer is aligned with the cut surface of the substrate as shown in a), or the end surface of the resin layer is retreated to the light emitting element side from the end surface of the substrate as shown in FIG. Maintained at.

  As shown in FIG. 4B, when the end surface of the resin layer is in a state of retreating to the light emitting element side from the end surface of the substrate, the cutting waste generated at the time of cutting hardly adheres to the boundary portion between the substrate and the resin layer. Therefore, it is possible to prevent a decrease in reliability and yield, and in particular, it is possible to prevent a decrease in light extraction efficiency. Further, as shown in FIG. 4B, when the end surface of the resin layer is retracted to the light emitting element side from the end surface of the substrate, even if the resin layer expands due to heat or the like in the use stage, the end surface of the resin layer There is no possibility of protruding outward from the end face of the substrate, and the size of the light emitting device can be maintained within the standard.

  Moreover, you may make it mix a fluorescent substance with a resin layer. This fluorescent material is excited by absorbing light emitted from the LED chip, and emits light of a color (for example, having a complementary color relationship) different from the emission color of the LED chip. Thereby, it becomes possible to obtain desired mixed color light emission according to the combination of the emission color of the LED chip and the emission color of the fluorescent material. Further, by changing the content or type of the fluorescent substance, it is possible to expand the realizable color tone range. Furthermore, the color tone can be easily adjusted by adjusting the film thickness of the translucent resin.

  Hereinafter, each component in the above-described resin sealing step will be described in detail.

  (Substrate 1) The substrate has a wiring pattern (not shown) or connection terminal portion made of metal foil on an insulating substrate such as an AlN substrate, an alumina ceramic substrate, a glass epoxy substrate, and a desired circuit as necessary. (Not shown) is formed, and the LED chip mounted on the upper surface and the wiring pattern or the connection terminal portion are electrically connected. A Si substrate may be used.

  (LED chip 2) The LED chip is a blue light emitting element having an emission peak wavelength in the vicinity of 460 nm, a blue-violet light emitting element having an emission peak wavelength in the vicinity of 410 nm, and an ultraviolet light emitting element having an emission peak wavelength in the vicinity of 365 nm. An element etc. can be used. Alternatively, a green light-emitting element, a blue-green light-emitting element, an orange light-emitting element, a red light-emitting element, an infrared light-emitting element, or the like can be used.

  The type of the LED chip 2 is not particularly limited. For example, an example in which a nitride semiconductor such as InN, AlN, GaN, InGaN, AlGaN, or InGaAlN is formed as a light emitting layer on a substrate by MOCVD or the like, an example As an example, an n-type contact layer made of n-type GaN, an n-type cladding layer made of n-type AlGaN, and a p-type contact layer made of p-type GaN are sequentially stacked on a sapphire substrate. . The semiconductor structure includes a homostructure having a MIS junction, a PIN junction, a PN junction, etc., a hetero bond, or a double hetero bond. Various emission wavelengths can be selected depending on the semiconductor material and the mixed crystal ratio. Moreover, it can be set as the single quantum well structure or the multiple quantum well structure which formed the semiconductor active layer in the thin film which produces a quantum effect. The active layer may be doped with donor impurities such as Si and Ge and / or acceptor impurities such as Zn and Mg. The emission wavelength of the LED chip can be changed from the ultraviolet region to red by changing the In content of InGaN in the active layer or by changing the type of impurities doped in the active layer.

  The LED chip 2 has a pair of electrodes (pad electrode, pad terminal) corresponding to an anode (p electrode) and a cathode (n electrode), and the pair of electrodes is electrically connected to the wiring pattern on the wiring substrate 1. Implemented in a connected state.

  Here, in the case of face-down mounting, for example, the wiring pattern portion (or conductive pattern, lead electrode) on the wiring board and the pad electrode of the LED chip are joined by metal bumps (for example, gold bumps) and are flip-chip connected. ing. In face-down mounting, not limited to the above example, a structure in which the conductive pattern on the wiring board and the pad electrode of the LED chip are ultrasonically bonded using solder, a conductive material such as gold, silver, palladium, rhodium, etc. Various forms such as a structure bonded using a conductive paste, an anisotropic conductive paste, or the like can be employed.

  On the other hand, in the face-up mounting, the LED chip is mounted on the wiring board and fixed by die bonding, and the pair of electrodes of the LED chip and the wiring on the wiring board are connected by a conductive wire (not shown). Bonded connection. The connection between the wiring board and the LED chip in face-up mounting is not limited to the above example, and various forms such as resin bonding and metal bonding can be adopted.

  (Resin 3) The light-transmitting resin is required to have high light transmittance in order to efficiently emit light from the LED chip 2 to the outside. The material of the resin 3 is a transparent resin having excellent weather resistance, such as an epoxy resin and a silicone resin, for example, a high viscosity silicone resin to which, for example, 18% by weight of silica nanofiller having a particle size of several nm to 10 nm is added. Use. In the structure in which the electrode of the LED chip 2 and the wiring pattern are connected by a conductive wire, the resin 3 also has a function of protecting the conductive wire. In this case, it is preferable to use a soft silicone resin having tackiness because the burden on the conductive wire is small. Moreover, by including a diffusing agent in the resin, the directivity from the LED chip can be relaxed and the viewing angle can be increased. Further, by forming the resin with a constant film thickness, it is possible to suppress unevenness in color brightness.

  (Fluorescent substance) A fluorescent substance absorbs light from an LED chip and converts it into light of a different wavelength, and is a YAG phosphor (rare earth aluminate fluorescence mainly activated by a lanthanoid element such as Ce). Body), nitride phosphors, and other phosphors can be used. These phosphors can be used with those having emission spectra in yellow, red, green, and blue by the excitation light from the LED chip, as well as emission spectra in yellow, blue-green, orange, etc., which are intermediate colors between them. Those having can also be used. By using these phosphors in various combinations, light emitting devices having various emission colors can be manufactured.

At this time, a YAG: Ce phosphor (a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Y ₃ Al ₅ O ₁₂ : Ce, having an emission peak wavelength in the vicinity of 540 nm) is used. Then, depending on the content thereof, yellow light emission that partially absorbs light from the blue light-emitting element and becomes a complementary color becomes possible. Accordingly, by using a combination of a blue light emitting LED chip and a YAG phosphor as a fluorescent material contained in the translucent resin, a light emitting device that emits white light by mixing colors of light emitted from the light emitting element and light emitted from the YAG phosphor. Can be formed relatively easily and with high reliability.

  As described above, in the first embodiment, when manufacturing a light emitting device in which LED chips are mounted on a substrate and sealed with a resin layer, a plurality of LED chips are mounted on a large substrate and sealed with a resin layer. Divide into a plurality of LED devices from the stopped state. In this division, the entire surface of the resin layer and the substrate is previously subjected to a hydrophilic treatment, and then the resin layer and the substrate are diced in a region where the LED chip is avoided while flowing cleaning water over the surfaces of the resin layer and the substrate. Thereby, it is possible to prevent the chips generated by the resin layer and the substrate during dicing from adhering to the surfaces of the resin layer and the substrate, and to manufacture a light emitting device with significantly improved reliability and yield. .

  The hydrophilic treatment can be easily performed by plasma treatment. When cutting the resin layer and the substrate, first, the resin layer is cut by the first dicing blade, and then the substrate is cut by the second dicing blade. By cutting with separate dicing blades in two stages as described above, an appropriate dicing blade can be used according to the object to be cut.

  The LED device obtained through the manufacturing process of the first embodiment described above includes an LED chip, a substrate on which the LED chip is mounted, and a translucent resin layer in which the LED chip is sealed on the substrate. The surface of the substrate and the resin layer is subjected to a hydrophilic treatment, and each of the substrate and the resin layer has an end face that is cut after the resin sealing of the light emitting element. Then, the cut end surface of the substrate and the cut end surface of the resin layer are aligned, or the cut end surface of the resin layer is set back from the cut end surface of the substrate to the light emitting element side, or the cut end surface of the resin layer is It protrudes from the cut end face. In the case of the above-mentioned retreat, the cutting waste generated at the time of cutting becomes difficult to adhere to the boundary portion between the substrate and the resin layer, preventing a decrease in reliability and yield, and in particular, preventing a decrease in light extraction efficiency. it can. Further, even if the resin layer expands due to heat or the like, there is no possibility that the end face protrudes outside the end face of the substrate, and the size of the light emitting device can be maintained within the standard.

In addition, since the surface of the substrate and the resin layer is hydrophilized, the chips generated in the dicing process are easily washed away by the cleaning water. Is 0 / mm ² . Thereby, the fall of the light extraction efficiency can be prevented by regulating the number of chips adhering to the end surfaces of the substrate and the resin layer in this way.

  In addition, when a silicone resin is used as the resin layer, the surface of the resin layer is modified into a glass shape by plasma treatment, so that cutting waste generated during cutting hardly adheres to the surface of the substrate and the resin layer. Therefore, it is possible to prevent a decrease in reliability and yield, and in particular, it is possible to prevent a decrease in light extraction efficiency.

  Further, by mixing the fluorescent material in the resin layer, it is possible to obtain desired mixed color light emission according to the combination of the emission color of the LED chip and the emission color of the fluorescent material. By changing the content or type of the fluorescent substance, it is possible to expand the realizable color tone range. By adjusting the film thickness of the resin, the color tone can be easily adjusted. For example, by using a blue light emitting element as an LED chip and using a YAG phosphor as a fluorescent material, a light emitting device that emits white light can be easily realized.

  (Example 1) First, as shown in FIG. 1, a substrate in which an LED chip is mounted on an upper surface and the LED chip is sealed with a resin layer is set in an Ar plasma apparatus, and Ar gas is introduced into the apparatus. Introduced. As an Ar plasma apparatus, for example, a product manufactured by Panasonic, model number PC30B-HS is used. As an example, Ar plasma treatment is performed under conditions of a gas pressure of 133 Pa (1 Torr), an RF power of 70 W (13.56 MHz), and a treatment time of 4 seconds. The surface of the substrate was made hydrophilic. The hydrophilic treatment does not have any adverse effect on the performance and shape of the LED device.

  Next, the substrate subjected to the hydrophilic treatment is divided into LED devices. At this time, first, the resin layer is cut using a first dicing blade having a thickness of 0.15 mm. At this time, although cutting waste is generated from the cutting portion, the cutting waste is caused to flow toward the peripheral edge of the substrate by the flow of cleaning water by flowing the cleaning water from the tip of the nozzle in the vicinity of the cutting portion. At this time, due to the hydrophilicity of the resin layer surface and the substrate surface, the cleaning water layer spreads uniformly on the surface, no dry region is generated, and no cutting waste remains on the resin layer and the substrate.

  Next, the substrate is cut using a second dicing blade having a thickness of 0.1 mm. At this time, although cutting waste is generated from the cutting portion, the cutting waste is caused to flow toward the peripheral edge of the substrate by the flow of cleaning water by flowing the cleaning water from the tip of the nozzle in the vicinity of the cutting portion. At this time, due to the hydrophilicity of the resin layer surface and the substrate surface, the cleaning water layer spreads uniformly on the surface, no dry region is generated, and no cutting waste remains on the resin layer and the substrate. Even after the dicing of the substrate is completed, the substrate is dried after the cleaning water continues to flow for a while.

  According to Example 1, it is possible to prevent cutting waste generated by the resin layer and the substrate during dicing from adhering to the surfaces of the resin layer and the substrate, and to manufacture a light emitting device with significantly improved reliability and yield. can do.

  (Example 2) In Example 2, when the resin layer and the substrate are cut, compared to Example 1 described above, the resin layer and the wiring substrate are continuously formed by the same dicing blade 5 as shown in FIG. It has been changed so as to be disconnected. In this case, when the dicing blade 5 is pulled up, the resin layer expands as much as it shrinks, and the end surface of the resin layer protrudes beyond the end surface of the substrate.

  According to Example 2, the same effect as Example 1 can be obtained, and the resin layer and the substrate can be cut easily and in a short time.

  The light emitting device manufacturing method and the light emitting device of the present invention can be applied to illumination light sources, various indicator light sources, in-vehicle light sources, display light sources, liquid crystal backlight light sources, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS The perspective view which shows a part of manufacturing process of the LED device which concerns on Example 1 of this invention roughly. Sectional drawing which shows roughly an example of the cutting process of the resin layer and board | substrate following the process of FIG. Sectional drawing which shows schematically an example of the cutting process of the resin layer and board | substrate following the process of FIG. Sectional drawing which shows roughly two examples of the LED device obtained through the process of FIG. 1 thru | or FIG. Sectional drawing which shows roughly an example of the cutting process of a resin layer and a board | substrate in the manufacturing process of the LED device which concerns on Example 2 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... LED chip, 3 ... Translucent resin, 4 ... 1st dicing blade, 5 ... 2nd dicing blade.

Claims (9)

A method of manufacturing a light-emitting device in which a light-emitting element is mounted on a substrate and the light-emitting element is sealed with a light-transmitting resin layer,
A first step in which a plurality of light emitting elements are mounted on the upper surface and subjected to a hydrophilic treatment on the entire surface of the substrate sealed with a resin layer;
A second step of cutting the resin layer and the substrate at a position avoiding the light emitting element while flowing washing water on the surface of the resin layer and the substrate after the hydrophilization treatment, and dividing into a light emitting device;
A method of manufacturing a light emitting device, comprising:   The method for manufacturing a light emitting device according to claim 1, wherein the hydrophilic treatment is a plasma treatment.   2. The light emitting device according to claim 1, wherein in the second step, the resin layer is first cut by a first dicing blade, and then the wiring board is cut by a second dicing blade. Device manufacturing method.   4. The method of manufacturing a light emitting device according to claim 3, wherein the thickness of the first dicing blade is thicker than the thickness of the second dicing blade.   2. The method for manufacturing a light emitting device according to claim 1, wherein in the second step, the resin layer and the wiring substrate are continuously cut by the same dicing blade. A light emitting element;
A substrate on which the light emitting element is mounted;
A translucent resin layer sealing the light emitting element on the substrate;
A surface of the substrate and the resin layer is subjected to a hydrophilic treatment, each of the substrate and the resin layer has an end face that is cut after the resin sealing of the light emitting element, and the end faces are aligned. A light emitting device characterized by the above. A light emitting element;
A substrate on which the light emitting element is mounted;
A translucent resin layer sealing the light emitting element on the substrate;
The substrate and the resin layer each have a surface that has been subjected to a hydrophilic treatment, each of the substrate and the resin layer has an end face that is cut after resin sealing of the light emitting element, and the resin layer of the end faces A light-emitting device, wherein the end face is set back from the end face of the substrate toward the light-emitting element. A light emitting element;
A substrate on which the light emitting element is mounted;
A translucent resin layer sealing the light emitting element on the substrate;
The surface of the substrate and the resin layer is subjected to a hydrophilic treatment, and each of the substrate and the resin layer has an end surface that is cut after sealing the resin of the light emitting element, and the end surface of the resin layer is the substrate. A light emitting device that protrudes outward from the end face of the light emitting device.   The light emitting device according to claim 6, wherein a silicone resin is used for the resin layer, and a surface of the resin layer is modified into a glass shape by plasma treatment.

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