JP2007242729A

JP2007242729A - Vapor phase epitaxial growth device and method

Info

Publication number: JP2007242729A
Application number: JP2006060093A
Authority: JP
Inventors: Tomokazu Katsuyama; 智和勝山
Original assignee: Sumitomo Electric Industries Ltd
Current assignee: Sumitomo Electric Industries Ltd
Priority date: 2006-03-06
Filing date: 2006-03-06
Publication date: 2007-09-20

Abstract

<P>PROBLEM TO BE SOLVED: To enhance efficiency of vapor phase epitaxial growth processing by shortening the time when a reactor is occupied by a semiconductor wafer during vapor phase epitaxial growth process in vapor phase epitaxial growth device and method. <P>SOLUTION: The vapor phase epitaxial growth device comprises a reactor 11 performing vapor phase epitaxial growth processing on a semiconductor wafer, a furnace 15a for elevating the temperature of the semiconductor wafer to a temperature range C required for vapor phase epitaxial growth processing and lowering the temperature of the semiconductor wafer after vapor phase epitaxial growth processing, and a section 21 for conveying the semiconductor wafer having a temperature elevated to the temperature range C required for vapor phase epitaxial growth processing from the temperature elevating/lowering furnace 15a to the reactor 11 and conveying the semiconductor wafer subjected to vapor phase epitaxial growth processing from the reactor 11 to the temperature elevating/lowering furnace 15a wherein the reactor 11 performs vapor phase epitaxial growth processing while sustaining the temperature in the reactor 11 within the temperature range C required for vapor phase epitaxial growth processing. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、気相成長装置及び気相成長方法に関する。 The present invention relates to a vapor phase growth apparatus and a vapor phase growth method.

従来より、特許文献１及び２に記載されているように、半導体ウェハ上に有機金属化合物から成る半導体結晶を気相成長するための気相成長装置が種々開発されている。このような気相成長装置は、気相成長処理を行う反応炉を一又は複数備える。この反応炉は、半導体ウェハを、常温から気相成長処理に必要な温度に昇温し、更に、この気相成長処理の後に常温に降温する。
特開平７−５８０１８号公報特開平１０−３６１８９号公報 Conventionally, as described in Patent Documents 1 and 2, various vapor phase growth apparatuses have been developed for vapor phase growth of semiconductor crystals made of organometallic compounds on a semiconductor wafer. Such a vapor phase growth apparatus includes one or more reaction furnaces that perform vapor phase growth processing. This reactor raises the temperature of the semiconductor wafer from room temperature to a temperature necessary for the vapor phase growth process, and further lowers the temperature to the normal temperature after the vapor phase growth process.
Japanese Patent Laid-Open No. 7-58018 Japanese Patent Laid-Open No. 10-36189

しかし、気相成長処理に伴う昇温・降温のプロセスには比較的長い時間（例えば９０分程度）が必要となる。このため、反応炉の使用効率向上のため、半導体ウェハが反応炉を占める時間の短縮化が望まれる。 However, a relatively long time (for example, about 90 minutes) is required for the temperature increase / decrease process associated with the vapor phase growth process. For this reason, in order to improve the use efficiency of the reactor, it is desired to shorten the time for which the semiconductor wafer occupies the reactor.

そこで、本発明は、気相成長装置及び気相成長方法において、気相成長処理時に半導体ウェハが反応炉を占める時間を短縮し、気相成長処理の効率向上を図ることを目的とする。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the efficiency of a vapor phase growth process by shortening the time that a semiconductor wafer occupies a reaction furnace during the vapor phase growth process in the vapor phase growth apparatus and the vapor phase growth method.

本発明の気相成長装置は、１）半導体ウェハに対し気相成長処理を行う反応炉と、２）上記気相成長処理に必要な温度範囲に上記半導体ウェハを昇温し、上記気相成長処理後の半導体ウェハを降温する第１の昇降温炉と、３）上記第１の昇降温炉により上記気相成長処理に必要な温度範囲に昇温された半導体ウェハを上記第１の昇降温炉から上記反応炉に搬送し、上記反応炉により上記気相成長処理が行われた半導体ウェハを上記反応炉から上記第１の昇降温炉に搬送する搬送部とを備え、上記反応炉は、当該反応炉内の温度を上記気相成長処理に必要な温度範囲に保持しつつ上記気相成長処理を行う、ことを特徴とする。 The vapor phase growth apparatus of the present invention includes 1) a reactor for performing vapor phase growth processing on a semiconductor wafer, and 2) raising the temperature of the semiconductor wafer to a temperature range necessary for the vapor phase growth processing, and performing the vapor phase growth. A first temperature raising and lowering furnace for lowering the temperature of the semiconductor wafer after processing; and 3) the first temperature raising and lowering temperature of the semiconductor wafer heated to the temperature range necessary for the vapor phase growth process by the first temperature raising and lowering furnace. A transport unit that transports the semiconductor wafer transferred from the furnace to the reaction furnace and the vapor phase growth process performed by the reaction furnace from the reaction furnace to the first heating / cooling furnace, and the reaction furnace includes: The vapor phase growth process is performed while maintaining the temperature in the reactor in a temperature range necessary for the vapor phase growth process.

本発明の気相成長方法は、１）昇温炉において半導体ウェハの温度を気相成長処理に必要な温度範囲に昇温するステップと、２）上記昇温炉において行われた昇温の後に、上記半導体ウェハを、搬送部を介して上記昇温炉から気相成長処理に必要な温度範囲に予め保持された反応炉に搬送するステップと、３）上記反応炉において上記半導体ウェハに気相成長処理を行うステップと、４）上記反応炉において行われた上記気相成長処理の後に、上記半導体ウェハを、搬送部を介して上記反応炉から降温炉に搬送するステップと、５）上記降温炉において上記半導体ウェハを降温するステップとを有する、ことを特徴とする。 The vapor phase growth method of the present invention includes 1) a step of raising the temperature of a semiconductor wafer to a temperature range necessary for vapor phase growth processing in a temperature raising furnace, and 2) after the temperature rise performed in the temperature raising furnace. A step of transporting the semiconductor wafer from the temperature raising furnace to a reaction furnace previously held in a temperature range necessary for vapor phase growth processing via a transport unit; and 3) a gas phase on the semiconductor wafer in the reaction furnace. A step of performing a growth process, 4) a step of transporting the semiconductor wafer from the reaction furnace to the temperature-decreasing furnace via a transport unit after the vapor phase growth process performed in the reaction furnace, and 5) the temperature-decreasing temperature. And a step of lowering the temperature of the semiconductor wafer in a furnace.

本発明の気相成長装置及び気相成長方法によれば、半導体ウェハに対する昇温及び降温は昇降温炉（又は、昇温炉及び降温炉）で行われ、反応炉内は気相成長処理に必要な温度範囲に保持される。このように、反応炉は、半導体ウェハを昇温及び降温することなく、気相成長処理のみを行うことが可能となる。このため、昇降温炉（又は、昇温炉若しくは降温炉）により半導体ウェハが昇温又は降温される間に、反応炉が他の半導体ウェハに対し気相成長処理を施すことができる。すなわち、複数の半導体ウェハに対し気相成長処理を連続して施すことが可能となる。よって、気相成長処理時に半導体ウェハが反応炉を占める時間が短縮されるので、反応炉の利用効率の向上が図れる。従って、気相成長処理の効率向上が図れる。 According to the vapor phase growth apparatus and the vapor phase growth method of the present invention, the semiconductor wafer is heated and lowered in the heating / cooling furnace (or the heating furnace and the cooling furnace), and the reaction furnace is subjected to the vapor growth process. Maintained in the required temperature range. Thus, the reactor can perform only the vapor phase growth process without raising or lowering the temperature of the semiconductor wafer. For this reason, while the temperature of the semiconductor wafer is raised or lowered by the temperature raising / lowering furnace (or the temperature raising or lowering furnace), the reaction furnace can perform the vapor phase growth process on the other semiconductor wafer. That is, it is possible to continuously perform vapor phase growth processing on a plurality of semiconductor wafers. Therefore, since the time for which the semiconductor wafer occupies the reaction furnace during the vapor phase growth process is shortened, the utilization efficiency of the reaction furnace can be improved. Accordingly, the efficiency of the vapor phase growth process can be improved.

本発明の気相成長装置では、上記気相成長処理に必要な温度範囲に半導体ウェハを昇温し、上記気相成長処理後の半導体ウェハを降温する第２の昇降温炉を更に備え、上記搬送部は、上記第２の昇降温炉により上記気相成長処理に必要な温度範囲に昇温された半導体ウェハを上記第２の昇降温炉から上記反応炉に搬送し、上記反応炉により上記気相成長処理が行われた半導体ウェハを上記反応炉から上記第２の昇降温炉に搬送する。従って、一の昇降温炉から反応炉に搬送された半導体ウェハが反応炉により気相成長処理が施されてから、この半導体ウェハが当該昇降温炉に再度搬送され、常温に降温されるまでの間に、他の半導体ウェハが他の昇降温炉から反応炉に搬送され、反応炉により気相成長処理が施される。すなわち、複数の昇降温炉から反応炉に順次搬送された複数の半導体ウェハに対し、反応炉内で昇温及び降温することなく、気相成長処理を連続して施すことが可能となる。よって、反応炉の利用効率の向上が図れ、気相成長処理の効率向上が図れる。 The vapor phase growth apparatus of the present invention further includes a second heating / cooling furnace that raises the temperature of the semiconductor wafer to a temperature range necessary for the vapor phase growth process, and lowers the temperature of the semiconductor wafer after the vapor phase growth process. The transfer unit transfers the semiconductor wafer heated to the temperature range necessary for the vapor phase growth process by the second heating / cooling furnace from the second heating / cooling furnace to the reaction furnace, and the reaction furnace The semiconductor wafer subjected to the vapor phase growth process is transferred from the reaction furnace to the second heating / cooling furnace. Therefore, after the semiconductor wafer transported from one heating / cooling furnace to the reaction furnace is subjected to the vapor phase growth process in the reaction furnace, the semiconductor wafer is transported again to the heating / cooling furnace until the temperature is lowered to room temperature. In the meantime, another semiconductor wafer is transferred from another heating / cooling furnace to the reaction furnace and subjected to vapor phase growth processing in the reaction furnace. That is, it is possible to continuously perform the vapor phase growth process on the plurality of semiconductor wafers sequentially transferred from the plurality of heating / cooling furnaces to the reaction furnace without increasing or decreasing the temperature in the reaction furnace. Therefore, the utilization efficiency of the reactor can be improved, and the efficiency of the vapor phase growth process can be improved.

本発明の気相成長装置では、上記昇降温炉は、当該昇降温炉内にガスを供給するためのガス供給部を有する。従って、半導体ウェハの昇温時に、半導体ウェハを構成する所定の物質成分の離脱によって生じるガス成分を、ガス供給部を介して補填できると共に、このような物質成分が半導体ウェハから離脱するのを抑制できる。 In the vapor phase growth apparatus of the present invention, the heating / cooling furnace has a gas supply unit for supplying gas into the heating / cooling furnace. Therefore, when the temperature of the semiconductor wafer is raised, the gas component generated by the separation of the predetermined material component constituting the semiconductor wafer can be compensated via the gas supply unit, and the separation of the material component from the semiconductor wafer is suppressed. it can.

本発明の気相成長装置では、上記反応炉は、当該反応炉内にある半導体ウェハと当該反応炉内のガスを排気する当該反応炉に設けられたガス排気部の開口とを覆うためのカバー部を有し、上記カバー部は、上記反応炉内にガスを供給する該反応炉に設けられたガス供給部に連通するガス供給口を有する。このように、カバー部内に原料ガスが供給されるため、原料ガスの分解による粉塵や反応炉内壁への堆積物がカバー部の外部で生じる可能性が低くなる。このような粉塵や堆積物はカバー部の内側に付着する。よって、半導体ウェハを反応炉から昇降温炉に移動する際にカバー部を反応炉内に残しておけば、反応炉から昇降温炉に移動する粉塵が低減する。 In the vapor phase growth apparatus of the present invention, the reaction furnace covers a semiconductor wafer in the reaction furnace and an opening of a gas exhaust part provided in the reaction furnace for exhausting the gas in the reaction furnace. The cover portion has a gas supply port communicating with a gas supply portion provided in the reaction furnace for supplying gas into the reaction furnace. In this way, since the source gas is supplied into the cover portion, the possibility that dusts and deposits on the inner wall of the reaction furnace are generated outside the cover portion due to the decomposition of the source gas is reduced. Such dust and deposits adhere to the inside of the cover part. Therefore, if the cover part is left in the reaction furnace when the semiconductor wafer is moved from the reaction furnace to the heating / cooling furnace, dust moving from the reaction furnace to the heating / cooling furnace is reduced.

本発明によれば、気相成長装置及び気相成長方法において、半導体ウェハが反応炉を気相成長処理時に占める時間を短縮し、気相成長処理の効率向上が図られる。 According to the present invention, in the vapor phase growth apparatus and the vapor phase growth method, the time required for the semiconductor wafer to occupy the reaction furnace in the vapor phase growth process can be shortened, and the efficiency of the vapor phase growth process can be improved.

以下、図面を参照して、本発明に係る好適な実施形態について詳細に説明する。なお、図面の説明においては同一要素には同一符号を付し、重複する説明を省略する場合がある。まず、図１を参照して、実施形態に係る気相成長装置１の構成を説明する。気相成長装置１は、ＭＯＶＰＥ（Metal-Organic VaporPhase Epitaxy）装置であり、半導体ウェハＷに対しＩＩＩ−Ｖ族半導体の有機金属気相成長処理（以下、簡単のため気相成長処理という）を行う反応炉１１を備える。反応炉１１の外壁の素材は例えば石英等である。なお、気相成長装置１は、ＩＩＩ−Ｖ族半導体以外の他の半導体の気相成長処理を行う装置であってもよい。反応炉１１内には、カバー部６１が着脱可能に設けられている。カバー部６１は、反応炉１１内にある半導体ウェハＷと、反応炉１１内のガスを排気する後述のガス排気部３３ａの開口とを覆う。反応炉１１により行われる気相成長処理に必要な原料ガスは、カバー部６１の内側（カバー部６１が覆う空間）に供給される。カバー部６１の内側の温度及び気圧は、反応炉１１内であってカバー部６１の外側の温度及び気圧と略同程度である。カバー部６１の素材は例えば石英等である。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions may be omitted. First, with reference to FIG. 1, the structure of the vapor phase growth apparatus 1 which concerns on embodiment is demonstrated. The vapor phase growth apparatus 1 is a MOVPE (Metal-Organic Vapor Phase Epitaxy) apparatus, and performs a metal-organic vapor phase growth process (hereinafter referred to as a vapor phase growth process for simplicity) of a group III-V semiconductor on a semiconductor wafer W. A reaction furnace 11 is provided. The material of the outer wall of the reaction furnace 11 is, for example, quartz. Note that the vapor phase growth apparatus 1 may be an apparatus that performs vapor phase growth processing of semiconductors other than the III-V group semiconductor. A cover 61 is detachably provided in the reaction furnace 11. The cover part 61 covers the semiconductor wafer W in the reaction furnace 11 and an opening of a gas exhaust part 33a described later for exhausting the gas in the reaction furnace 11. The source gas necessary for the vapor phase growth process performed in the reaction furnace 11 is supplied to the inside of the cover part 61 (the space covered by the cover part 61). The temperature and atmospheric pressure inside the cover part 61 are approximately the same as the temperature and atmospheric pressure inside the reaction furnace 11 and outside the cover part 61. The material of the cover part 61 is, for example, quartz.

気相成長装置１は、昇降温炉１５ａ及び昇降温炉１５ｂを更に備える。昇降温炉１５ａ及び昇降温炉１５ｂは、気相成長処理に必要な温度範囲（以下、温度範囲Ｃという）に至るまで半導体ウェハＷの温度を昇温し、気相成長処理後の半導体ウェハＷの温度を常温に至るまで降温する。このように、昇降温炉１５ａ及び昇降温炉１５ｂは、昇温炉及び降温炉の機能を合わせ持つ。このため、昇温炉としての機能を発揮している際には、昇降温炉１５ａ及び昇降温炉１５ｂを昇温炉と称してもよいし、降温炉としての機能を発揮している際には、昇降温炉１５ａ及び昇降温炉１５ｂを降温炉と称してもよい。昇降温炉１５ａ及び昇降温炉１５ｂの各外壁の素材は例えば石英等である。気相成長装置１は、ゲートバルブ１３ａ及びゲートバルブ１３ｂを更に備える。ゲートバルブ１３ａは、反応炉１１と昇降温炉１５ａとを連結する連結路１４ａを開閉するバルブである。ゲートバルブ１３ｂは、反応炉１１と昇降温炉１５ｂとを連結する連結路１４ｂを開閉するバルブである。気相成長装置１は、前室１９ａ及び前室１９ｂを更に備える。前室１９ａ及び前室１９ｂは、気相成長処理を行う半導体ウェハＷを挿入し、気相成長処理後の半導体ウェハＷを取り出すためのスペースである。気相成長装置１は、ゲートバルブ１７ａ及びゲートバルブ１７ｂを更に備える。ゲートバルブ１７ａは、昇降温炉１５ａと前室１９ａとを連結する連結路１８ａを開閉するバルブである。ゲートバルブ１７ｂは、昇降温炉１５ｂと前室１９ｂとを連結する連結路１８ｂを開閉するバルブである。気相成長装置１は、搬送部２１及び半導体ウェハ搬送部５６を備える。半導体ウェハ搬送部５６は、半導体ウェハＷを、反応炉１１、昇降温炉１５ａ、昇降温炉１５ｂ、前室１９ａ及び前室１９ｂに搬送するための装置である。搬送部２１は、前室１９ａ、昇降温炉１５ａ及び反応炉１１に半導体ウェハ搬送部５６が移動するためのレールを含むと共に、前室１９ｂ、昇降温炉１５ｂ及び１１に半導体ウェハ搬送部５６が移動するためのレールを含む。 The vapor phase growth apparatus 1 further includes a heating / cooling furnace 15a and a heating / cooling furnace 15b. The temperature raising and lowering furnace 15a and the temperature raising and lowering furnace 15b raise the temperature of the semiconductor wafer W until reaching the temperature range necessary for the vapor phase growth process (hereinafter referred to as the temperature range C), and the semiconductor wafer W after the vapor phase growth process. The temperature is lowered to room temperature. Thus, the heating / cooling furnace 15a and the heating / cooling furnace 15b have the functions of a heating furnace and a cooling furnace. For this reason, when the function as a heating furnace is exhibited, the heating / cooling furnace 15a and the heating / cooling furnace 15b may be called a heating furnace, or when exhibiting the function as a cooling furnace. The heating / cooling furnace 15a and the heating / cooling furnace 15b may be referred to as a cooling furnace. The material of each outer wall of the raising / lowering furnace 15a and the raising / lowering furnace 15b is quartz etc., for example. The vapor phase growth apparatus 1 further includes a gate valve 13a and a gate valve 13b. The gate valve 13a is a valve that opens and closes a connection path 14a that connects the reaction furnace 11 and the heating / cooling furnace 15a. The gate valve 13b is a valve that opens and closes a connection path 14b that connects the reaction furnace 11 and the heating / cooling furnace 15b. The vapor phase growth apparatus 1 further includes a front chamber 19a and a front chamber 19b. The front chamber 19a and the front chamber 19b are spaces for inserting a semiconductor wafer W to be subjected to vapor phase growth processing and taking out the semiconductor wafer W after the vapor phase growth processing. The vapor phase growth apparatus 1 further includes a gate valve 17a and a gate valve 17b. The gate valve 17a is a valve that opens and closes a connecting path 18a that connects the heating / cooling furnace 15a and the front chamber 19a. The gate valve 17b is a valve that opens and closes a connecting path 18b that connects the heating / cooling furnace 15b and the front chamber 19b. The vapor phase growth apparatus 1 includes a transfer unit 21 and a semiconductor wafer transfer unit 56. The semiconductor wafer transfer unit 56 is a device for transferring the semiconductor wafer W to the reaction furnace 11, the heating / cooling furnace 15a, the heating / cooling furnace 15b, the front chamber 19a, and the front chamber 19b. The transfer unit 21 includes a rail for moving the semiconductor wafer transfer unit 56 to the front chamber 19a, the heating / cooling furnace 15a, and the reaction furnace 11, and the semiconductor wafer transfer unit 56 to the front chamber 19b and the heating / cooling furnaces 15b and 11. Includes rails to move.

ここで、図２を参照して気相成長装置１の更に詳細な構成を説明する。半導体ウェハ搬送部５６は、サセプタ搬送台車５１、サセプタ５３及びプレート５５を有する。サセプタ５３の素材は例えばカーボン等であり、プレート５５の素材は例えば石英等である。サセプタ５３の表面５３ａに半導体ウェハＷが載置される。カバー部６１は、断面が略半円状の略円筒形状を有しており、天井部には筒状のガス供給口６３が設けられている。ガス供給口６３は、反応炉１１内に原料ガスを供給するガス供給部２５ａ内に連通する。すなわち、ガス供給口６３の開口部上にはガス供給部２５ａが位置する。また、カバー部６１の長手方向の両端に設けられた側壁６１ａ及び側壁６１ｂには、半導体ウェハ搬送部５６の出し入れを可能とする搬入搬出口６５ａ及び搬入搬出口６５ａがそれぞれ設けられている。すなわち、搬入搬出口６５ａ及び搬入搬出口６５ａを介して、サセプタ搬送台車５１と、サセプタ搬送台車５１上に設けられたサセプタ５３及びプレート５５と、サセプタ５３の表面５３ａに載置された半導体ウェハＷとが、カバー部６１内に出し入れ可能となっている。搬送部２１は、板形状を有しており、その表面に設けられた台車移動レール２１ａ及びカバー部移動レール２１ｂを有する。台車移動レール２１ａは、半導体ウェハ搬送部５６を移動させるためのレールであり、台車移動レール２１ａ上には、サセプタ搬送台車５１がこのレール上を移動可能に設置されている。カバー部移動レール２１ｂは、カバー部６１を移動させるためのレールである。サセプタ搬送台車５１には、サセプタ搬送台車５１を貫通する孔部５１ａが設けられており、プレート５５には、プレート５５を貫通する孔部５５ａが設けられている。孔部５１ａと孔部５５ａとが重なることにより排気口５７が形成される。排気口５７は、ガス排気部３３ａの開口部上に位置する。なお、半導体ウェハ搬送部５６が昇降温炉１５ａ又は昇降温炉１５ｂ内にある場合、排気口５７は、ガス排気部３３ｂの開口部上又はガス排気部３３ｃの開口部上に位置することとなる。 Here, a more detailed configuration of the vapor phase growth apparatus 1 will be described with reference to FIG. The semiconductor wafer transfer unit 56 includes a susceptor transfer carriage 51, a susceptor 53 and a plate 55. The material of the susceptor 53 is, for example, carbon, and the material of the plate 55 is, for example, quartz. A semiconductor wafer W is placed on the surface 53 a of the susceptor 53. The cover part 61 has a substantially cylindrical shape with a substantially semicircular cross section, and a cylindrical gas supply port 63 is provided in the ceiling part. The gas supply port 63 communicates with the gas supply unit 25 a that supplies the raw material gas into the reaction furnace 11. That is, the gas supply unit 25 a is located on the opening of the gas supply port 63. Further, on the side wall 61a and the side wall 61b provided at both ends in the longitudinal direction of the cover portion 61, a loading / unloading port 65a and a loading / unloading port 65a that allow the semiconductor wafer transfer unit 56 to be taken in and out are provided, respectively. That is, the susceptor transfer carriage 51, the susceptor 53 and the plate 55 provided on the susceptor transfer carriage 51, and the semiconductor wafer W placed on the surface 53a of the susceptor 53 via the carry-in / out opening 65a and the carry-in / out opening 65a. Can be taken in and out of the cover portion 61. The transport unit 21 has a plate shape, and includes a carriage moving rail 21a and a cover moving rail 21b provided on the surface thereof. The carriage moving rail 21a is a rail for moving the semiconductor wafer transfer unit 56, and a susceptor transfer carriage 51 is movably installed on the carriage moving rail 21a. The cover part moving rail 21 b is a rail for moving the cover part 61. The susceptor transport carriage 51 is provided with a hole 51 a that penetrates the susceptor transport carriage 51, and the plate 55 is provided with a hole 55 a that penetrates the plate 55. An exhaust port 57 is formed by overlapping the hole 51a and the hole 55a. The exhaust port 57 is located on the opening of the gas exhaust part 33a. In addition, when the semiconductor wafer conveyance part 56 exists in the heating / cooling furnace 15a or the heating / cooling furnace 15b, the exhaust port 57 will be located on the opening part of the gas exhaust part 33b, or on the opening part of the gas exhaust part 33c. .

また、図３に示すように、ＩＩＩ族の原料ガス及びＶ族の原料ガスは、後述するポンプ３７の作用によりガス供給部２５ａから図中符号Ｅ１の向きにカバー部６１内に供給される。そして、この原料ガスは、ポンプ３７の作用により図中符号Ｅ２に示す向きにカバー部６１内を流れ、更に、図中符号Ｅ３に示す向きに排気口５７を介してガス排気部３３ａに流れる。この場合、図４（ａ）に示すように、ガス供給部２５ａの開口径Ｌ１が、ガス供給口６３の開口径Ｌ２に比較して大きく、更に、図４（ｂ）に示すように、排気口５７の開口径Ｌ３が、ガス排気部３３ａの開口径Ｌ４に比較して大きい。このため、ガス供給部２５ａから流れるＩＩＩ族の原料ガス及びＶ族の原料ガスのうち、ガス供給口６３の外部（カバー部６１の外部）に漏れ出す原料ガスは僅かとなる。すなわち、ガス供給部２５ａから流れるＩＩＩ族の原料ガス及びＶ族の原料ガスのほとんどは、図中符号Ｅ１の向きにガス供給口６３内に流れることとなる。更に、排気口５７から排気されるガスのうち、ガス排気部３３ａの外部に漏れ出すガスは僅かとなる。すなわち、排気口５７から排気されるガスのほとんどは、図中符号Ｅ３の向きにガス排気部３３ａ内に流れることとなる。なお、ガス排気部３３ｂ及びガス排気部３３ｃの各開口径はガス排気部３３ａの開口径Ｌ４と略程度であり、従って、排気口５７の開口径Ｌ３に比較して大きい。これによって半導体ウェハＷ上の原料ガスの流れが制御され、結晶の均一性の向上に寄与する。 Further, as shown in FIG. 3, the group III source gas and the group V source gas are supplied into the cover 61 from the gas supply unit 25a in the direction of reference E1 in the drawing by the action of a pump 37 described later. The source gas flows through the cover 61 in the direction indicated by the symbol E2 in the drawing by the action of the pump 37, and further flows to the gas exhaust portion 33a through the exhaust port 57 in the direction indicated by the symbol E3 in the drawing. In this case, as shown in FIG. 4A, the opening diameter L1 of the gas supply part 25a is larger than the opening diameter L2 of the gas supply port 63, and further, as shown in FIG. The opening diameter L3 of the port 57 is larger than the opening diameter L4 of the gas exhaust part 33a. For this reason, among the group III source gas and the group V source gas flowing from the gas supply unit 25a, only a small amount of source gas leaks out of the gas supply port 63 (outside of the cover unit 61). That is, most of the group III source gas and the group V source gas flowing from the gas supply unit 25a flow into the gas supply port 63 in the direction of reference E1 in the drawing. Furthermore, among the gases exhausted from the exhaust port 57, only a small amount of gas leaks out of the gas exhaust part 33a. That is, most of the gas exhausted from the exhaust port 57 flows into the gas exhaust part 33a in the direction of E3 in the figure. In addition, each opening diameter of the gas exhaust part 33b and the gas exhaust part 33c is substantially the same as the opening diameter L4 of the gas exhaust part 33a, and therefore is larger than the opening diameter L3 of the exhaust port 57. As a result, the flow of the source gas on the semiconductor wafer W is controlled, which contributes to improvement in crystal uniformity.

図１に戻って説明を続ける。気相成長装置１は、計測器３０ａ、計測器３０ｂ及び計測器３０ｃを更に備える。計測器３０ａは、反応炉１１内に設けられており、反応炉１１内の温度及び気圧等を計測する。計測器３０ｂは、昇降温炉１５ａ内に設けられており、昇降温炉１５ａ内の温度及び気圧等を計測する。計測器３０ｃは、昇降温炉１５ｂ内に設けられており、昇降温炉１５ｂ内の温度及び気圧等を計測する。気相成長装置１は、加熱装置３１ａ、加熱装置３１ｂ及び加熱装置３１ｃを備える。加熱装置３１ａは、反応炉１１に設けられており、反応炉１１内の温度を上げるための装置である。加熱装置３１ｂは、昇降温炉１５ａに設けられており、昇降温炉１５ａ内の温度を上げるための装置である。加熱装置３１ｃは、昇降温炉１５ｂに設けられており、昇降温炉１５ｂ内の温度を上げるための装置である。気相成長装置１は、ガス供給装置２３を更に備える。ガス供給装置２３は、反応炉１１、昇降温炉１５ａ及び昇降温炉１５ｂに、各種ガス（ＩＩＩ族の原料ガス、Ｖ族の原料ガス及びパージガス等）を供給する装置である。ガス供給装置２３は、特に、Ｖ族の原料ガスを昇降温炉１５ａ及び昇降温炉１５ｂに供給し、ＩＩＩ族の原料ガス及びＶ族の原料ガスを反応炉１１に供給する。気相成長装置１は、ガス供給部２５ａ、ガス供給部２５ｂ及びガス供給部２５ｃと、ガス供給ラインＰ１〜ガス供給ラインＰ４とを備える。ガス供給部２５ａは、ガス供給ラインＰ１及びガス供給ラインＰ３を介してガス供給装置２３に接続されている。ガス供給部２５ｂは、ガス供給ラインＰ１及びガス供給ラインＰ２を介してガス供給装置２３に接続されている。ガス供給部２５ｃは、ガス供給ラインＰ１及びガス供給ラインＰ４を介してガス供給装置２３に接続されている。ガス供給部２５ａは、反応炉１１に設けられており、反応炉１１内（カバー部６１内）にＩＩＩ族の原料ガス及びＶ族の原料ガスを供給するためのノズルである。ガス供給部２５ｂは、昇降温炉１５ａに設けられており、昇降温炉１５ａ内にＶ族の原料ガスを供給するためのノズルである。ガス供給部２５ｃは、昇降温炉１５ｂに設けられており、昇降温炉１５ｂ内にＶ族の原料ガスを供給するためのノズルである。なお、ガス供給部２５ａ、ガス供給部２５ｂ及びガス供給部２５ｃと、ガス供給ラインＰ１〜ガス供給ラインＰ４とには、ＩＩＩ族の原料ガスを流すライン及びノズルと、Ｖ族の原料ガスを流すライン及びノズルと、パージガスを流すライン及びノズルとが互いに独立して設けられている。特に、ＩＩＩ族の原料ガスとＶ族の原料ガスとは、反応炉１１内でのみ反応するように設計されている。 Returning to FIG. 1, the description will be continued. The vapor phase growth apparatus 1 further includes a measuring instrument 30a, a measuring instrument 30b, and a measuring instrument 30c. The measuring instrument 30a is provided in the reaction furnace 11, and measures the temperature, atmospheric pressure, and the like in the reaction furnace 11. The measuring instrument 30b is provided in the heating / cooling furnace 15a, and measures the temperature, atmospheric pressure, etc. in the heating / cooling furnace 15a. The measuring instrument 30c is provided in the heating / cooling furnace 15b, and measures the temperature, atmospheric pressure, etc. in the heating / cooling furnace 15b. The vapor phase growth apparatus 1 includes a heating device 31a, a heating device 31b, and a heating device 31c. The heating device 31 a is provided in the reaction furnace 11 and is a device for raising the temperature in the reaction furnace 11. The heating device 31b is provided in the heating / cooling furnace 15a, and is a device for raising the temperature in the heating / cooling furnace 15a. The heating device 31c is provided in the heating / cooling furnace 15b and is a device for raising the temperature in the heating / cooling furnace 15b. The vapor phase growth apparatus 1 further includes a gas supply device 23. The gas supply device 23 is a device that supplies various gases (Group III source gas, Group V source gas, purge gas, and the like) to the reaction furnace 11, the heating / cooling furnace 15a, and the heating / cooling furnace 15b. In particular, the gas supply device 23 supplies a group V source gas to the heating / cooling furnace 15 a and the heating / cooling furnace 15 b, and supplies a group III source gas and a group V source gas to the reaction furnace 11. The vapor phase growth apparatus 1 includes a gas supply unit 25a, a gas supply unit 25b, a gas supply unit 25c, and a gas supply line P1 to a gas supply line P4. The gas supply unit 25a is connected to the gas supply device 23 via the gas supply line P1 and the gas supply line P3. The gas supply unit 25b is connected to the gas supply device 23 via the gas supply line P1 and the gas supply line P2. The gas supply unit 25c is connected to the gas supply device 23 via the gas supply line P1 and the gas supply line P4. The gas supply unit 25a is provided in the reaction furnace 11 and is a nozzle for supplying a group III source gas and a group V source gas into the reaction furnace 11 (in the cover unit 61). The gas supply unit 25b is provided in the heating / cooling furnace 15a, and is a nozzle for supplying a group V source gas into the heating / cooling furnace 15a. The gas supply unit 25c is provided in the heating / cooling furnace 15b and is a nozzle for supplying a group V source gas into the heating / cooling furnace 15b. The gas supply unit 25a, the gas supply unit 25b, the gas supply unit 25c, the gas supply line P1 to the gas supply line P4, a line and nozzle for supplying a group III source gas, and a group V source gas are supplied. A line and a nozzle and a line and a nozzle through which purge gas flows are provided independently of each other. In particular, the group III source gas and the group V source gas are designed to react only in the reaction furnace 11.

気相成長装置１は、開閉バルブ２７ａ、開閉バルブ２７ｂ及び開閉バルブ２７ｃを備える。開閉バルブ２７ａは、ガス供給ラインＰ３に設けられており、ガス供給ラインＰ３の開閉を行う。開閉バルブ２７ｂは、ガス供給ラインＰ２に設けられており、ガス供給ラインＰ２の開閉を行う。開閉バルブ２７ｃは、ガス供給ラインＰ４に設けられており、ガス供給ラインＰ４の開閉を行う。気相成長装置１は、計測器２９ａ、計測器２９ｂ及び計測器２９ｃを備える。計測器２９ａは、ガス供給ラインＰ３に設けられており、ガス供給ラインＰ３を流れるＩＩＩ族の原料ガス及びＶ族の原料ガスの流量等を計測する。計測器２９ｂは、ガス供給ラインＰ２に設けられており、ガス供給ラインＰ２を流れるＩＩＩ族の原料ガスの流量等を計測する。計測器２９ｃは、ガス供給ラインＰ４に設けられており、ガス供給ラインＰ４を流れるＩＩＩ族の原料ガスの流量等を計測する。気相成長装置１は、ガス排気部３３ａ、ガス排気部３３ｂ及びガス排気部３３ｃと、ガス供給ラインＰ５〜ガス供給ラインＰ８とを備える。ガス排気部３３ａは、ガス供給ラインＰ７及びガス供給ラインＰ５を介してフィルタ３５に接続されている。ガス排気部３３ｂは、ガス供給ラインＰ６及びガス供給ラインＰ５を介してフィルタ３５に接続されている。ガス排気部３３ｃは、ガス供給ラインＰ８及びガス供給ラインＰ５を介してフィルタ３５に接続されている。ガス排気部３３ａは、反応炉１１に設けられており、反応炉１１内（カバー部６１内）のガスをガス供給ラインＰ７に排気するためのノズルである。ガス排気部３３ｂは、昇降温炉１５ａに設けられており、昇降温炉１５ａ内のガスをガス供給ラインＰ６に排気するためのノズルである。ガス排気部３３ｃは、昇降温炉１５ｂに設けられており、昇降温炉１５ｂ内のガスをガス供給ラインＰ８に排気するためのノズルである。 The vapor phase growth apparatus 1 includes an opening / closing valve 27a, an opening / closing valve 27b, and an opening / closing valve 27c. The open / close valve 27a is provided in the gas supply line P3, and opens and closes the gas supply line P3. The opening / closing valve 27b is provided in the gas supply line P2, and opens and closes the gas supply line P2. The opening / closing valve 27c is provided in the gas supply line P4, and opens and closes the gas supply line P4. The vapor phase growth apparatus 1 includes a measuring instrument 29a, a measuring instrument 29b, and a measuring instrument 29c. The measuring device 29a is provided in the gas supply line P3, and measures the flow rates of the group III source gas and the group V source gas flowing through the gas supply line P3. The measuring instrument 29b is provided in the gas supply line P2, and measures the flow rate of the group III source gas flowing through the gas supply line P2. The measuring instrument 29c is provided in the gas supply line P4, and measures the flow rate of the group III source gas flowing through the gas supply line P4. The vapor phase growth apparatus 1 includes a gas exhaust part 33a, a gas exhaust part 33b, a gas exhaust part 33c, and a gas supply line P5 to a gas supply line P8. The gas exhaust part 33a is connected to the filter 35 via the gas supply line P7 and the gas supply line P5. The gas exhaust part 33b is connected to the filter 35 via the gas supply line P6 and the gas supply line P5. The gas exhaust part 33c is connected to the filter 35 via the gas supply line P8 and the gas supply line P5. The gas exhaust part 33a is provided in the reaction furnace 11, and is a nozzle for exhausting the gas in the reaction furnace 11 (in the cover part 61) to the gas supply line P7. The gas exhaust part 33b is provided in the heating / cooling furnace 15a, and is a nozzle for exhausting the gas in the heating / cooling furnace 15a to the gas supply line P6. The gas exhaust part 33c is provided in the heating / cooling furnace 15b and is a nozzle for exhausting the gas in the heating / cooling furnace 15b to the gas supply line P8.

気相成長装置１は、フィルタ３５、ポンプ３７及び除害装置３９を更に備える。フィルタ３５は、ガス供給ラインＰ５に接続されており、ガス供給ラインＰ５からの排気ガスに含まれる高温の原料ガスを冷却し、そしてトラップ内に堆積させることにより、このような毒性の強い原料ガスが下流に流れるのを防ぐ機能を有する（コールドトラップ）。また、フィルタ３５は、ガス供給ラインＰ５から排気されたガスから粉塵を除去する。ポンプ３７は、ガス供給装置２３からガス供給ラインＰ３等を介して反応炉１１、昇降温炉１５ａ及び昇降温炉１５ｂに各種原料ガスを供給すると共に、反応炉１１、昇降温炉１５ａ及び昇降温炉１５ｂのガスをガス供給ラインＰ５等を介してフィルタ３５に排気する。除害装置３９は、フィルタ３５を通過したガスに対する除害処理を行う。気相成長装置１は、開閉バルブ４１ａ、開閉バルブ４１ｂ及び開閉バルブ４１ｃを備える。開閉バルブ４１ａは、ガス供給ラインＰ７に設けられており、ガス供給ラインＰ７の開閉を行う。開閉バルブ４１ｂは、ガス供給ラインＰ６に設けられており、ガス供給ラインＰ６の開閉を行う。開閉バルブ４１ｃは、ガス供給ラインＰ８に設けられており、ガス供給ラインＰ８の開閉を行う。なお、気相成長装置１は、制御装置４３を備えてもよい。制御装置４３は、計測器２９ａ、計測器２９ｂ及び計測器２９ｃと、計測器３０ａ、計測器３０ｂ及び計測器３０ｃによる計測結果等に基づいて、気相成長装置１の各構成部の駆動制御を行う。特に、制御装置４３は、後述する図５のフローチャートに示す処理を実行する。 The vapor phase growth apparatus 1 further includes a filter 35, a pump 37, and an abatement apparatus 39. The filter 35 is connected to the gas supply line P5, and cools the high-temperature source gas contained in the exhaust gas from the gas supply line P5 and deposits it in the trap, so that such a highly toxic source gas is obtained. Has a function of preventing water from flowing downstream (cold trap). The filter 35 removes dust from the gas exhausted from the gas supply line P5. The pump 37 supplies various source gases from the gas supply device 23 to the reaction furnace 11, the heating / cooling furnace 15a, and the heating / cooling furnace 15b via the gas supply line P3, and the reaction furnace 11, the heating / cooling furnace 15a, and the heating / cooling temperature. The gas in the furnace 15b is exhausted to the filter 35 through the gas supply line P5 and the like. The detoxifying device 39 performs a detoxifying process on the gas that has passed through the filter 35. The vapor phase growth apparatus 1 includes an opening / closing valve 41a, an opening / closing valve 41b, and an opening / closing valve 41c. The opening / closing valve 41a is provided in the gas supply line P7, and opens and closes the gas supply line P7. The opening / closing valve 41b is provided in the gas supply line P6, and opens and closes the gas supply line P6. The opening / closing valve 41c is provided in the gas supply line P8, and opens and closes the gas supply line P8. The vapor phase growth apparatus 1 may include a control device 43. The control device 43 performs drive control of each component of the vapor phase growth apparatus 1 based on the measurement results by the measurement device 29a, the measurement device 29b, the measurement device 29c, the measurement device 30a, the measurement device 30b, and the measurement device 30c. Do. In particular, the control device 43 executes processing shown in a flowchart of FIG.

次に、図５及び図６を参照して、気相成長装置１の動作を説明する。図５に、反応炉１１、昇降温炉１５ａ及び前室１９ａを用いた気相成長処理を説明するためのフローチャートを示す。なお、反応炉１１、昇降温炉１５ｂ及び前室１９ｂを用いた気相成長処理も図５のフローチャートと同様の処理である。また、図６に、半導体ウェハＷの温度変化を示す。図６に示す半導体ウェハＷの温度は、半導体ウェハＷを収容している反応炉１１又は昇降温炉１５ａ内の各温度と略同一である。以下、半導体ウェハＷを収容している反応炉１１又は昇降温炉１５ａ内の各温度を、半導体ウェハＷの温度と略同一であるとして説明する。ゲートバルブ１３ａ及びゲートバルブ１３ｂと、ゲートバルブ１７ａとは予め閉じられている。また、反応炉１１は、加熱装置３１ａにより、気相成長処理に必要な温度範囲Ｃ（図６参照）にある摂氏３００度程度（図６に示す温度Ｃ１）に保持されており、更に、ポンプ３７により１００ｍｂａｒ程度（気圧Ａ１という）に減圧された状態に保持されている。まず、前室１９ａに、気相成長処理を行う半導体ウェハ（第１の半導体ウェハＷ１という）がセットされる。以下の処理におけるこの第１の半導体ウェハＷ１の温度変化を、図６に示すグラフＧ１に示す。この場合、前室１９ａ内には半導体ウェハ搬送部５６が待機しており、第１の半導体ウェハＷ１は、この半導体ウェハ搬送部５６のサセプタ５３の表面５３ａ上に載置される。 Next, the operation of the vapor phase growth apparatus 1 will be described with reference to FIGS. FIG. 5 shows a flowchart for explaining the vapor phase growth process using the reaction furnace 11, the heating / cooling furnace 15a, and the front chamber 19a. The vapor phase growth process using the reactor 11, the heating / cooling furnace 15b, and the front chamber 19b is the same process as the flowchart of FIG. FIG. 6 shows a temperature change of the semiconductor wafer W. The temperature of the semiconductor wafer W shown in FIG. 6 is substantially the same as each temperature in the reaction furnace 11 or the heating / cooling furnace 15a containing the semiconductor wafer W. Hereinafter, it is assumed that each temperature in the reaction furnace 11 or the heating / cooling furnace 15a containing the semiconductor wafer W is substantially the same as the temperature of the semiconductor wafer W. The gate valve 13a, the gate valve 13b, and the gate valve 17a are closed in advance. The reactor 11 is maintained by the heating device 31a at about 300 degrees Celsius (temperature C1 shown in FIG. 6) in the temperature range C (see FIG. 6) necessary for the vapor phase growth process. 37, the pressure is reduced to about 100 mbar (atmospheric pressure A1). First, a semiconductor wafer (referred to as a first semiconductor wafer W1) to be subjected to vapor phase growth processing is set in the front chamber 19a. The temperature change of the first semiconductor wafer W1 in the following processing is shown in a graph G1 shown in FIG. In this case, the semiconductor wafer transfer unit 56 stands by in the front chamber 19a, and the first semiconductor wafer W1 is placed on the surface 53a of the susceptor 53 of the semiconductor wafer transfer unit 56.

その後、気相成長処理の処理開始指示が制御装置４３において入力されると、ゲートバルブ１７ａが開かれる。そして、第１の半導体ウェハＷ１の載置された半導体ウェハ搬送部５６が搬送部２１を介して昇降温炉１５ａに移動される（ステップＳ１）。この時、半導体ウェハ搬送部５６の排気口５７はガス排気部３３ｂの開口部上に位置する。半導体ウェハ搬送部５６の昇降温炉１５ａへの移動が完了するとゲートバルブ１７ａが閉じられる。その後、昇降温炉１５ａでは、ポンプ３７により気圧Ａ１程度まで減圧されると共に、加熱装置３１ｂにより温度Ｃ２程度（図６参照）まで昇温される（ステップＳ２）。すなわち、ステップＳ２では、昇降温炉１５ａにより第１の半導体ウェハＷ１の温度が気相成長処理に必要な温度範囲Ｃ（特に温度Ｃ１）に至るまで昇温される。この場合、加熱により第１の半導体ウェハＷ１からガスとなって発せられる成分（Ｖ族物質）の補填をするため、この成分（Ｖ族物質）を含む原料ガスがガス供給部２５ｂを介してガス供給装置２３から昇降温炉１５ａ内に供給される。例えば、第１の半導体ウェハＷ１がＩｎＰの素材の場合、加熱によりＰを含む物質がガスとなって発せられる。このため、第１の半導体ウェハＷ１にＰを補填するため、Ｖ族の原料ガスとしてＰＨ_３等のガスが供給される。なお、原料ガスを供給し続ける理由としては、このように第１の半導体ウェハＷ１にＶ族物質を補填するためだけでなく、第１の半導体ウェハＷ１から離脱する物質成分のガスの気圧を高くして第１の半導体ウェハＷ１からのＶ族物質の離脱を抑制するためでもある。 Thereafter, when a processing start instruction for the vapor phase growth processing is input in the control device 43, the gate valve 17a is opened. Then, the semiconductor wafer transfer unit 56 on which the first semiconductor wafer W1 is placed is moved to the heating / cooling furnace 15a via the transfer unit 21 (step S1). At this time, the exhaust port 57 of the semiconductor wafer transfer unit 56 is located on the opening of the gas exhaust unit 33b. When the movement of the semiconductor wafer transfer unit 56 to the heating / cooling furnace 15a is completed, the gate valve 17a is closed. Thereafter, in the heating / cooling furnace 15a, the pressure is reduced to about atmospheric pressure A1 by the pump 37, and the temperature is raised to about temperature C2 (see FIG. 6) by the heating device 31b (step S2). That is, in step S2, the temperature of the first semiconductor wafer W1 is raised by the heating / cooling furnace 15a until it reaches the temperature range C (particularly temperature C1) necessary for the vapor phase growth process. In this case, in order to compensate for the component (group V material) emitted from the first semiconductor wafer W1 as a gas by heating, the source gas containing this component (group V material) is supplied via the gas supply unit 25b. It is supplied from the supply device 23 into the heating / cooling furnace 15a. For example, when the first semiconductor wafer W1 is an InP material, a substance containing P is emitted as a gas by heating. For this reason, in order to supplement P to the first semiconductor wafer W1, a gas such as PH ₃ is supplied as a group V source gas. The reason for continuing to supply the source gas is not only to supplement the first semiconductor wafer W1 with the group V material in this way, but also to increase the pressure of the gas of the material component that leaves the first semiconductor wafer W1. This is also for suppressing the separation of the group V material from the first semiconductor wafer W1.

その後、昇降温炉１５ａの温度（すなわち、第１の半導体ウェハＷ１の温度）が温度Ｃ１程度まで昇温され、気圧が気圧Ａ１程度に減圧されると（図６に示すタイミングＴ１に対応）、ゲートバルブ１３ａが開かれる。そして、昇降温炉１５ａにより昇温された第１の半導体ウェハＷ１の載置された半導体ウェハ搬送部５６が搬送部２１を介して気相成長処理に必要な温度範囲に予め保持された反応炉１１に移動される（ステップＳ３）。以下、半導体ウェハ搬送部５６は、サセプタ５３の表面５３ａに載置された第１の半導体ウェハＷ１（更には、以下で説明する第２の半導体ウェハＷ２〜第５の半導体ウェハＷ５）等の半導体ウェハを含めたものとして説明する。半導体ウェハ搬送部５６の反応炉１１への移動が完了するとゲートバルブ１３ａが閉じられる。この時、半導体ウェハ搬送部５６はカバー部６１内に位置し、カバー部６１により覆われた状態となっている。更にこの時、半導体ウェハ搬送部５６の排気口５７はガス排気部３３ａの開口部上に位置する。その後、図６に示す時刻ｔ１において、反応炉１１内の温度（すなわち、第１の半導体ウェハＷ１の温度）が気相成長処理に好適な摂氏６５０度から摂氏７００度程度の範囲内の温度（温度Ｃ２という）に至るまで更に昇温される。そして、加熱により第１の半導体ウェハＷ１からガスとなって発せられるＶ族物質の補填をするため、更には、第１の半導体ウェハＷ１からのＶ族物質の離脱を抑制するため、Ｖ族の原料ガスがガス供給部２５ａを介してガス供給装置２３から反応炉１１内に供給される。その後、反応炉１１内では、温度Ｃ２程度が維持されつつ、ガス供給部２５ａを介してガス供給装置２３からＩＩＩ族の原料ガス及びＶ族の原料ガスがカバー部６１内に供給され、第１の半導体ウェハＷ１に対し気相成長処理が施される（ステップＳ４）。その後、気相成長処理が終了されると（図６に示す時刻ｔ２の時点）、反応炉１１では、ポンプ３７により気圧Ａ１程度まで減圧されると共に、加熱装置３１ｂにより温度Ｃ１程度まで降温される。この場合、第１の半導体ウェハＷ１からガスとなって発せられるＶ族物質の補填をするため、更には、第１の半導体ウェハＷ１からのＶ族物質の離脱を抑制するため、Ｖ族の原料ガス（ＰＨ_３又はＡｓＨ_３等）がガス供給部２５ａを介してガス供給装置２３から反応炉１１内に供給される。 Thereafter, when the temperature of the heating / cooling furnace 15a (that is, the temperature of the first semiconductor wafer W1) is raised to about the temperature C1, and the atmospheric pressure is reduced to about the atmospheric pressure A1 (corresponding to the timing T1 shown in FIG. 6), The gate valve 13a is opened. Then, the reaction furnace in which the semiconductor wafer transfer unit 56 on which the first semiconductor wafer W1 heated by the heating / cooling furnace 15a is placed is previously held in the temperature range necessary for the vapor phase growth process via the transfer unit 21. 11 (step S3). Hereinafter, the semiconductor wafer transfer unit 56 is a semiconductor such as a first semiconductor wafer W1 (further, a second semiconductor wafer W2 to a fifth semiconductor wafer W5 described below) placed on the surface 53a of the susceptor 53. A description will be given assuming that the wafer is included. When the movement of the semiconductor wafer transfer unit 56 to the reaction furnace 11 is completed, the gate valve 13a is closed. At this time, the semiconductor wafer transfer unit 56 is located in the cover unit 61 and is covered with the cover unit 61. Further, at this time, the exhaust port 57 of the semiconductor wafer transfer unit 56 is located on the opening of the gas exhaust unit 33a. Thereafter, at time t1 shown in FIG. 6, the temperature in the reactor 11 (that is, the temperature of the first semiconductor wafer W1) is within a range of about 650 degrees Celsius to 700 degrees Celsius suitable for the vapor phase growth process ( The temperature is further increased to a temperature C2). In order to compensate for the group V material emitted from the first semiconductor wafer W1 as a gas by heating, and further to suppress the separation of the group V material from the first semiconductor wafer W1, The source gas is supplied from the gas supply device 23 into the reaction furnace 11 through the gas supply unit 25a. Thereafter, in the reactor 11, while maintaining the temperature at about C2, a group III source gas and a group V source gas are supplied from the gas supply unit 23 into the cover unit 61 through the gas supply unit 25a, and the first The vapor phase growth process is performed on the semiconductor wafer W1 (step S4). Thereafter, when the vapor phase growth process is completed (at time t2 shown in FIG. 6), in the reactor 11, the pressure is reduced to about A1 by the pump 37, and the temperature is lowered to about C1 by the heating device 31b. . In this case, in order to compensate for the group V material emitted as gas from the first semiconductor wafer W1, and further to suppress the separation of the group V material from the first semiconductor wafer W1, a group V material is provided. gas (PH ₃ or AsH _3, etc.) is supplied into the reactor 11 from the gas supply unit 23 via the gas supply unit 25a.

反応炉１１内の温度（すなわち、第１の半導体ウェハＷ１の温度）が温度Ｃ１程度に至り、そして気圧が気圧Ａ１程度に至ると（図６に示すタイミングＴ２に対応）、ゲートバルブ１３ａが開かれる。そして、反応炉１１により気相成長処理が行われた第１の半導体ウェハＷ１の載置された半導体ウェハ搬送部５６が、搬送部２１を介して昇降温炉１５ａに移動される（ステップＳ５）。この時、半導体ウェハ搬送部５６の排気口５７はガス排気部３３ｂの開口部上に位置する。半導体ウェハ搬送部５６の昇降温炉１５ａへの移動が完了するとゲートバルブ１３ａが閉じられる。なお、図６に示すタイミングＴ２に至るまでに、昇降温炉１５ａ内はポンプ３７及び加熱装置３１ｂにより温度Ｃ１程度及び気圧Ａ１程度に保たれている。その後、昇降温炉１５ａ内の温度（すなわち、第１の半導体ウェハＷ１の温度）が常温に至るまで降温されると共に、気圧が常圧に至るまで調整される（ステップＳ６）。この場合、パージガスが、ガス供給部２５ｂを介してガス供給装置２３から昇降温炉１５ａ内に供給され、ガス排気部３３ｂを介して除害装置３９に排気される。 When the temperature in the reaction furnace 11 (that is, the temperature of the first semiconductor wafer W1) reaches about the temperature C1, and the atmospheric pressure reaches about the atmospheric pressure A1 (corresponding to the timing T2 shown in FIG. 6), the gate valve 13a is opened. It is. Then, the semiconductor wafer transfer unit 56 on which the first semiconductor wafer W1 subjected to the vapor phase growth process by the reaction furnace 11 is moved to the heating / cooling furnace 15a via the transfer unit 21 (step S5). . At this time, the exhaust port 57 of the semiconductor wafer transfer unit 56 is located on the opening of the gas exhaust unit 33b. When the movement of the semiconductor wafer transfer unit 56 to the heating / cooling furnace 15a is completed, the gate valve 13a is closed. In addition, by the time T2 shown in FIG. 6, the inside of the heating / cooling furnace 15a is maintained at about temperature C1 and about atmospheric pressure A1 by the pump 37 and the heating device 31b. Thereafter, the temperature in the heating / cooling furnace 15a (that is, the temperature of the first semiconductor wafer W1) is lowered to normal temperature, and the atmospheric pressure is adjusted to normal pressure (step S6). In this case, the purge gas is supplied from the gas supply device 23 into the heating / cooling furnace 15a through the gas supply unit 25b and exhausted to the detoxifying device 39 through the gas exhaust unit 33b.

その後、昇降温炉１５ａ内が常温・常圧に至ると、ゲートバルブ１７ａが開かれる。そして、気相成長処理が行われた第１の半導体ウェハＷ１の載置された半導体ウェハ搬送部５６が搬送部２１を介して前室１９ａに移動される。半導体ウェハ搬送部５６の前室１９ａへの移動が完了するとゲートバルブ１７ａが閉じられる。そして、この気相成長処理が行われた第１の半導体ウェハＷ１が前室１９ａから取り出される。 Thereafter, when the temperature in the heating / cooling furnace 15a reaches room temperature / normal pressure, the gate valve 17a is opened. Then, the semiconductor wafer transfer unit 56 on which the first semiconductor wafer W1 on which the vapor phase growth process has been performed is moved to the front chamber 19a via the transfer unit 21. When the movement of the semiconductor wafer transfer unit 56 to the front chamber 19a is completed, the gate valve 17a is closed. And the 1st semiconductor wafer W1 in which this vapor phase growth process was performed is taken out from the front chamber 19a.

その後、図６に示す時刻ｔ４において、前室１９ａに新たな半導体ウェハ（第２の半導体ウェハＷ２という）が搬入され、上述の処理（図５に示すステップＳ１〜ステップＳ６の処理であり、以下、ウェハ処理という）と同様の処理がこの第２の半導体ウェハＷ２に施される。この第２の半導体ウェハＷ２の温度変化を、図６のグラフＧ２に示す。第２の半導体ウェハＷ２に対する上述のウェハ処理が終了すると（図６に示す時刻ｔ８の時点）、新たな半導体ウェハ（第３の半導体ウェハＷ３という）が前室１９ａに搬入され、上述のウェハ処理と同様の処理がこの第３の半導体ウェハＷ３に施される。この第３の半導体ウェハＷ３の温度変化を、図６のグラフＧ３に示す。 Thereafter, at time t4 shown in FIG. 6, a new semiconductor wafer (referred to as a second semiconductor wafer W2) is carried into the front chamber 19a, and the above-described processing (the processing in steps S1 to S6 shown in FIG. , Referred to as wafer processing) is performed on the second semiconductor wafer W2. The change in temperature of the second semiconductor wafer W2 is shown in a graph G2 in FIG. When the above-described wafer processing for the second semiconductor wafer W2 is completed (at time t8 shown in FIG. 6), a new semiconductor wafer (referred to as the third semiconductor wafer W3) is carried into the front chamber 19a, and the above-described wafer processing is performed. The same processing as that described above is performed on the third semiconductor wafer W3. The change in temperature of the third semiconductor wafer W3 is shown in a graph G3 in FIG.

また、第１の半導体ウェハＷ１が、前室１９ａから昇降温炉１５ａ及び反応炉１１に搬送され、更に昇降温炉１５ａを介して前室１９ａに搬送されるまでの間の、例えば、図６に示す時刻ｔ２において、前室１９ｂに、他の半導体ウェハ（第４の半導体ウェハＷ４という）が搬入され、その後、前室１９ｂ、昇降温炉１５ｂ及び反応炉１１を用いて上述のウェハ処理と同様の処理がこの第４の半導体ウェハＷ４に施される。この第４の半導体ウェハＷ４の温度変化を、図６のグラフＧ４に示す。第４の半導体ウェハＷ４に対する処理が終了すると（図６に示す時刻ｔ６の時点）、新たな半導体ウェハ（第５の半導体ウェハＷ５という）が前室１９ｂに搬入され、上述のウェハ処理と同様の処理がこの第５の半導体ウェハＷ５に施される。この第５の半導体ウェハＷ５の温度変化を、図６のグラフＧ５に示す。なお、図６に示す時刻ｔ４は、第４の半導体ウェハＷ４が、前室１９ｂから昇降温炉１５ｂ及び反応炉１１に搬送され、更に昇降温炉１５ｂを介して前室１９ｂに搬送されるまでの間にある。また、図６に示す時刻ｔ６は、第２の半導体ウェハＷ２が、前室１９ａから昇降温炉１５ａ及び反応炉１１に搬送され、更に昇降温炉１５ａを介して前室１９ａに搬送されるまでの間にある。また、図６に示す時刻ｔ８は、第５の半導体ウェハＷ５が、前室１９ｂから昇降温炉１５ｂ及び反応炉１１に搬送され、更に昇降温炉１５ｂを介して前室１９ｂに搬送されるまでの間にある。 Further, the first semiconductor wafer W1 is transferred from the front chamber 19a to the heating / cooling furnace 15a and the reaction furnace 11, and further transferred to the front chamber 19a via the heating / cooling furnace 15a, for example, FIG. At time t2 shown in FIG. 4, another semiconductor wafer (referred to as a fourth semiconductor wafer W4) is loaded into the front chamber 19b, and then the above-described wafer processing is performed using the front chamber 19b, the heating / cooling furnace 15b, and the reaction furnace 11. A similar process is performed on the fourth semiconductor wafer W4. The change in temperature of the fourth semiconductor wafer W4 is shown in a graph G4 in FIG. When the processing on the fourth semiconductor wafer W4 is completed (at time t6 shown in FIG. 6), a new semiconductor wafer (referred to as the fifth semiconductor wafer W5) is carried into the front chamber 19b, and is the same as the wafer processing described above. Processing is performed on the fifth semiconductor wafer W5. The change in temperature of the fifth semiconductor wafer W5 is shown in a graph G5 in FIG. At time t4 shown in FIG. 6, until the fourth semiconductor wafer W4 is transferred from the front chamber 19b to the heating / cooling furnace 15b and the reaction furnace 11, and further transferred to the front chamber 19b via the heating / cooling furnace 15b. Between. At time t6 shown in FIG. 6, the second semiconductor wafer W2 is transferred from the front chamber 19a to the heating / cooling furnace 15a and the reaction furnace 11, and further transferred to the front chamber 19a via the heating / cooling furnace 15a. Between. Further, at time t8 shown in FIG. 6, until the fifth semiconductor wafer W5 is transferred from the front chamber 19b to the heating / cooling furnace 15b and the reaction furnace 11, and further transferred to the front chamber 19b via the heating / cooling furnace 15b. Between.

以上説明したように、実施形態に係る気相成長装置１は、前室１９ａ及び前室１９ｂと、昇降温炉１５ａ及び昇降温炉１５ｂと、反応炉１１とを備える。昇降温炉１５ａ及び昇降温炉１５ｂの各々は、気相成長処理に必要な温度範囲に半導体ウェハを昇温し、気相成長処理後の半導体ウェハを常温に降温する。また、反応炉１１は、この反応炉１１内の温度を気相成長処理に必要な温度範囲に保持し、昇降温炉１５ａ及び昇降温炉１５ｂの各々により気相成長処理に必要な温度に昇温された半導体ウェハに気相成長処理を施す。そして、昇降温炉１５ａから反応炉１１に搬送された半導体ウェハが反応炉１１により気相成長処理が施されてから、この半導体ウェハが昇降温炉１５ａに再度搬送され、常温に降温されるまでの間に、他の半導体ウェハが、前室１９ｂ及び昇降温炉１５ｂから反応炉１１に搬送され、反応炉１１により気相成長処理が施される。この場合、半導体ウェハに対する昇温及び降温は、昇降温炉１５ａ及び昇降温炉１５ｂ内で行われ、反応炉１１内は気相成長処理に必要な温度範囲に保持される。このように、反応炉１１は、半導体ウェハを昇温及び降温することなく、気相成長処理のみを行うことが可能となる。このため、昇降温炉１５ａ又は昇降温炉１５ｂにより半導体ウェハが昇温又は降温される間に、反応炉１１が他の半導体ウェハに対し気相成長処理を施すことができる。すなわち、気相成長装置１は、複数の半導体ウェハに対し気相成長処理を連続して施すことが可能となる。よって、気相成長処理時に半導体ウェハが反応炉１１を占める時間が短縮されるので、反応炉１１の利用効率の向上が図れる。従って、気相成長処理の効率向上が図れる。 As described above, the vapor phase growth apparatus 1 according to the embodiment includes the front chamber 19a and the front chamber 19b, the heating / cooling furnace 15a and the heating / cooling furnace 15b, and the reaction furnace 11. Each of the temperature raising and lowering furnace 15a and the temperature raising and lowering furnace 15b raises the temperature of the semiconductor wafer to a temperature range necessary for the vapor phase growth process, and lowers the temperature of the semiconductor wafer after the vapor phase growth process to room temperature. The reaction furnace 11 keeps the temperature in the reaction furnace 11 within a temperature range necessary for the vapor phase growth process, and the temperature is raised to a temperature necessary for the vapor phase growth process by each of the temperature raising and lowering furnace 15a and the temperature raising and lowering furnace 15b. A vapor phase growth process is performed on the heated semiconductor wafer. Then, after the semiconductor wafer transferred from the heating / cooling furnace 15a to the reaction furnace 11 is subjected to the vapor phase growth process by the reaction furnace 11, the semiconductor wafer is transferred again to the heating / cooling furnace 15a and cooled to room temperature. In the meantime, another semiconductor wafer is transferred from the front chamber 19 b and the heating / cooling furnace 15 b to the reaction furnace 11, and is subjected to vapor phase growth processing by the reaction furnace 11. In this case, the temperature raising and lowering of the semiconductor wafer are performed in the temperature raising and lowering furnace 15a and the temperature raising and lowering furnace 15b, and the reaction furnace 11 is maintained in a temperature range necessary for the vapor phase growth process. As described above, the reactor 11 can perform only the vapor phase growth process without raising or lowering the temperature of the semiconductor wafer. For this reason, while the semiconductor wafer is heated or lowered by the heating / cooling furnace 15a or the heating / cooling furnace 15b, the reaction furnace 11 can perform vapor phase growth processing on other semiconductor wafers. That is, the vapor phase growth apparatus 1 can continuously perform vapor phase growth processing on a plurality of semiconductor wafers. Therefore, since the time during which the semiconductor wafer occupies the reaction furnace 11 during the vapor phase growth process is shortened, the utilization efficiency of the reaction furnace 11 can be improved. Accordingly, the efficiency of the vapor phase growth process can be improved.

また、気相成長装置１は、昇降温炉１５ａ及び昇降温炉１５ｂを備えるため、昇降温炉１５ａから反応炉１１に搬送された半導体ウェハが反応炉１１により気相成長処理が施されてから、この半導体ウェハが昇降温炉１５ａに再度搬送され、常温に降温されるまでの間に、他の半導体ウェハが昇降温炉１５ｂから反応炉１１に搬送され、反応炉１１により気相成長処理が施される。すなわち、複数の昇降温炉（昇降温炉１５ａ及び昇降温炉１５ｂ）から反応炉１１に順次搬送された複数の半導体ウェハに対し、反応炉１１内で昇温及び降温することなく、気相成長処理を連続して施すことが可能となる。よって、反応炉１１の利用効率の向上が図れ、気相成長処理の効率向上が図れる。また、気相成長処理後の半導体ウェハが反応炉１１から昇降温炉１５ａ又は昇降温炉１５ｂに搬送される場合、ゲートバルブ１３ａ又はゲートバルブ１３ｂが開放され、反応炉１１と昇降温炉１５ａ又は昇降温炉１５ｂとが連通する。反応炉１１内は、気相成長処理に必要な温度に保持されているため、原料ガスにより生じる粉塵が浮遊する。このため、ゲートバルブ１３ａ又はゲートバルブ１３ｂが開放され、反応炉１１と昇降温炉１５ａ又は昇降温炉１５ｂとが連通すると、反応炉１１内を浮遊する粉塵が昇降温炉１５ａ又は昇降温炉１５ｂに移動する場合がある。よって、昇降温炉１５ａ又は昇降温炉１５ｂ内に移動した粉塵が、半導体ウェハの降温時に、この半導体ウェハの表面や、昇降温炉１５ａ又は昇降温炉１５ｂの内壁等に付着するおそれが生じる。しかし、実施形態に係る反応炉１１は、半導体ウェハを覆うカバー部６１を有しており、カバー部６１内に原料ガスが供給される。このため、粉塵がカバー部６１の外部で生成される可能性は低減される。そして、ゲートバルブ１３ａ又はゲートバルブ１３ｂが開放され、反応炉１１と昇降温炉１５ａ又は昇降温炉１５ｂとが連通した場合に昇降温炉１５ａ又は昇降温炉１５ｂに移動する粉塵は低減される。従って、半導体ウェハの降温時に、この半導体ウェハの表面や、昇降温炉１５ａ又は昇降温炉１５ｂの内壁等に粉塵が付着する可能性の低減化が図れる。更に、反応炉１１、昇降温炉１５ａ及び昇降温炉１５ｂ等に粉塵が付着する可能性が低くなるため、メンテナンスが容易となる。 Further, since the vapor phase growth apparatus 1 includes the heating / cooling furnace 15a and the heating / cooling furnace 15b, the semiconductor wafer transferred from the heating / cooling furnace 15a to the reaction furnace 11 is subjected to the vapor phase growth process by the reaction furnace 11. Until this semiconductor wafer is transferred again to the heating / cooling furnace 15a and cooled to room temperature, another semiconductor wafer is transferred from the heating / cooling furnace 15b to the reaction furnace 11, and the reaction furnace 11 performs vapor phase growth processing. Applied. That is, vapor phase growth is performed without increasing or decreasing the temperature of the plurality of semiconductor wafers sequentially transferred from the plurality of heating / cooling furnaces (the heating / cooling furnace 15a and the heating / cooling furnace 15b) to the reaction furnace 11. Processing can be performed continuously. Therefore, the utilization efficiency of the reactor 11 can be improved, and the efficiency of the vapor phase growth process can be improved. Further, when the semiconductor wafer after the vapor phase growth process is transferred from the reaction furnace 11 to the heating / cooling furnace 15a or the heating / cooling furnace 15b, the gate valve 13a or the gate valve 13b is opened, and the reaction furnace 11 and the heating / cooling furnace 15a or The heating / cooling furnace 15b communicates. Since the inside of the reaction furnace 11 is maintained at a temperature necessary for the vapor phase growth process, dust generated by the source gas floats. For this reason, when the gate valve 13a or the gate valve 13b is opened and the reaction furnace 11 and the heating / cooling furnace 15a or the heating / cooling furnace 15b communicate with each other, the dust floating in the reaction furnace 11 is moved to the heating / cooling furnace 15a or the heating / cooling furnace 15b. May move to. Therefore, there is a possibility that the dust moved into the heating / cooling furnace 15a or the heating / cooling furnace 15b may adhere to the surface of the semiconductor wafer, the inner wall of the heating / cooling furnace 15a, or the heating / cooling furnace 15b when the temperature of the semiconductor wafer is lowered. However, the reaction furnace 11 according to the embodiment has the cover portion 61 that covers the semiconductor wafer, and the raw material gas is supplied into the cover portion 61. For this reason, possibility that dust will be generated outside cover part 61 is reduced. Then, when the gate valve 13a or the gate valve 13b is opened and the reaction furnace 11 communicates with the heating / cooling furnace 15a or the heating / cooling furnace 15b, dust moving to the heating / cooling furnace 15a or the heating / cooling furnace 15b is reduced. Therefore, when the temperature of the semiconductor wafer is lowered, the possibility of dust adhering to the surface of the semiconductor wafer, the inner wall of the heating / cooling furnace 15a or the heating / cooling furnace 15b can be reduced. Furthermore, since the possibility of dust adhering to the reaction furnace 11, the heating / cooling furnace 15a, the heating / cooling furnace 15b, etc. is reduced, maintenance is facilitated.

＜変形例１＞
なお、発明は、上述の実施形態に限らない。例えば、本発明に係る実施形態としては、図７（ａ）に示す気相成長装置１ａであってもよい。気相成長装置１ａは、昇降温炉１５ａ及び昇降温炉１５ｂの各々が、ゲートバルブ１７ａ及びゲートバルブ１７ｂを介して前室１９ａに連結された構成を有する。気相成長装置１ａも、図４に示すような、複数の半導体ウェハに対する連続した気相成長処理が可能である。この場合、例えば、第１の半導体ウェハＷ１が、前室１９ａから昇降温炉１５ａ及び反応炉１１に搬送され、更に昇降温炉１５ａを介して前室１９ａに搬送されるまでの間の、例えば、時刻ｔ２において、前室１９ａに、他の半導体ウェハが搬入されることとなる。その後、この第４の半導体ウェハＷ４に対し、昇降温炉１５ｂ及び反応炉１１により上述のウェハ処理と同様の処理が施される。第１の半導体ウェハＷ１及び第４の半導体ウェハＷ４の各温度変化は、図６に示すグラフＧ１及びグラフＧ４と同様である。更に、第２の半導体ウェハＷ２、第５の半導体ウェハＷ５及び第３の半導体ウェハＷ３等に対し上述のウェハ処理と同様の処理が順次施される。第２の半導体ウェハＷ２、第５の半導体ウェハＷ５及び第３の半導体ウェハＷ３の各温度変化は、図６に示すグラフＧ２、グラフＧ５及びグラフＧ３と同様である。 <Modification 1>
The invention is not limited to the above-described embodiment. For example, an embodiment according to the present invention may be a vapor phase growth apparatus 1a shown in FIG. The vapor phase growth apparatus 1a has a configuration in which each of the heating / cooling furnace 15a and the heating / cooling furnace 15b is connected to the front chamber 19a via the gate valve 17a and the gate valve 17b. The vapor phase growth apparatus 1a can also perform continuous vapor phase growth processing on a plurality of semiconductor wafers as shown in FIG. In this case, for example, the first semiconductor wafer W1 is transferred from the front chamber 19a to the heating / cooling furnace 15a and the reaction furnace 11, and further transferred to the front chamber 19a via the heating / cooling furnace 15a, for example. At time t2, another semiconductor wafer is carried into the front chamber 19a. Thereafter, the fourth semiconductor wafer W4 is subjected to the same processing as the above-described wafer processing by the heating / cooling furnace 15b and the reaction furnace 11. Each temperature change of the first semiconductor wafer W1 and the fourth semiconductor wafer W4 is the same as the graph G1 and the graph G4 shown in FIG. Further, processing similar to the above-described wafer processing is sequentially performed on the second semiconductor wafer W2, the fifth semiconductor wafer W5, the third semiconductor wafer W3, and the like. Each temperature change of the 2nd semiconductor wafer W2, the 5th semiconductor wafer W5, and the 3rd semiconductor wafer W3 is the same as that of graph G2, graph G5, and graph G3 shown in FIG.

＜変形例２＞
また、本発明に係る実施形態としては、図７（ｂ）に示す気相成長装置１ｂであってもよい。気相成長装置１ｂは、気相成長装置１ａの昇降温炉１５ａ及び昇降温炉１５ｂに替えて昇温炉１６ａ及び降温炉１６ｂが用いられている。昇温炉１６ａは、気相成長処理に必要な温度範囲に至るまで半導体ウェハの温度を昇温し、降温炉１６ｂは、気相成長処理後の半導体ウェハの温度を常温に至るまで降温する。このような構成であっても、図４に示すような、複数の半導体ウェハに対する連続した気相成長処理が可能である。この場合、例えば、第１の半導体ウェハＷ１は、前室１９ａからゲートバルブ１７ａを介して昇温炉１６ａに搬送され、この昇温炉１６ａにより気相成長処理に必要な温度範囲に至るまで昇温される。この後、第１の半導体ウェハＷ１は、昇温炉１６ａからゲートバルブ１３ｂを介して気相成長処理に必要な温度範囲に予め保持された反応炉１１に搬送され（図６に示すタイミングＴ１に対応）、反応炉１１により気相成長処理が行われる（図６に示す時刻ｔ１の時点）。この後、第１の半導体ウェハＷ１は、反応炉１１からゲートバルブ１３ａを介して降温炉１６ｂに搬送され（図６に示すタイミングＴ２に対応）、この降温炉１６ｂにより降温される。この後、第１の半導体ウェハＷ１は、降温炉１６ｂからゲートバルブ１７ｂを介して前室１９ａに搬送される。第１の半導体ウェハＷ１の温度変化は、図６に示すグラフＧ１と同様である。 <Modification 2>
Further, an embodiment according to the present invention may be a vapor phase growth apparatus 1b shown in FIG. In the vapor phase growth apparatus 1b, a heating furnace 16a and a cooling furnace 16b are used instead of the heating / cooling furnace 15a and the heating / cooling furnace 15b of the vapor phase growth apparatus 1a. The temperature raising furnace 16a raises the temperature of the semiconductor wafer until the temperature range necessary for the vapor phase growth process is reached, and the temperature lowering furnace 16b lowers the temperature of the semiconductor wafer after the vapor phase growth process to the room temperature. Even with such a configuration, a continuous vapor phase growth process can be performed on a plurality of semiconductor wafers as shown in FIG. In this case, for example, the first semiconductor wafer W1 is transferred from the front chamber 19a to the temperature raising furnace 16a via the gate valve 17a, and is raised to a temperature range necessary for the vapor phase growth process by the temperature raising furnace 16a. Be warmed. Thereafter, the first semiconductor wafer W1 is transferred from the temperature raising furnace 16a through the gate valve 13b to the reaction furnace 11 previously held in a temperature range necessary for the vapor phase growth process (at timing T1 shown in FIG. 6). Corresponding), vapor phase growth processing is performed by the reactor 11 (at the time t1 shown in FIG. 6). Thereafter, the first semiconductor wafer W1 is transferred from the reaction furnace 11 to the temperature lowering furnace 16b via the gate valve 13a (corresponding to the timing T2 shown in FIG. 6), and the temperature is lowered by the temperature lowering furnace 16b. Thereafter, the first semiconductor wafer W1 is transferred from the temperature decreasing furnace 16b to the front chamber 19a via the gate valve 17b. The temperature change of the first semiconductor wafer W1 is the same as the graph G1 shown in FIG.

また、第１の半導体ウェハＷ１が、前室１９ａから昇降温炉１５ａ及び反応炉１１に搬送され、更に昇降温炉１５ａを介して前室１９ａに搬送されるまでの間の、例えば、時刻ｔ２において、前室１９ａに、他の半導体ウェハが搬入される。そして、この第４の半導体ウェハＷ４は、前室１９ａからゲートバルブ１７ａを介して昇温炉１６ａに搬送され、この昇温炉１６ａにより気相成長処理に必要な温度範囲に至るまで昇温される。この後、第４の半導体ウェハＷ４は、昇温炉１６ａからゲートバルブ１３ｂを介して気相成長処理に必要な温度範囲に予め保持された反応炉１１に搬送され、反応炉１１により気相成長処理が行われる（図６に示す時刻ｔ３の時点）。この後、第４の半導体ウェハＷ４は、反応炉１１からゲートバルブ１３ａを介して降温炉１６ｂに搬送され、この降温炉１６ｂにより降温される。この後、第４の半導体ウェハＷ４は、降温炉１６ｂからゲートバルブ１７ｂを介して前室１９ａに搬送される。第４の半導体ウェハＷ４の温度変化は、図６に示すグラフＧ４と同様である。これ以降、上述した第１の半導体ウェハＷ１及び第４の半導体ウェハＷ４に対して行われた処理と同様の処理が第２の半導体ウェハＷ２、第５の半導体ウェハＷ５及び第３の半導体ウェハＷ３等に対して順次施される。第２の半導体ウェハＷ２、第５の半導体ウェハＷ５及び第３の半導体ウェハＷ３の各温度変化は、図６に示すグラフＧ２、グラフＧ５及びグラフＧ３と同様である。 In addition, for example, at time t2 until the first semiconductor wafer W1 is transferred from the front chamber 19a to the heating / cooling furnace 15a and the reaction furnace 11 and further transferred to the front chamber 19a via the heating / cooling furnace 15a. Then, another semiconductor wafer is carried into the front chamber 19a. Then, the fourth semiconductor wafer W4 is transferred from the front chamber 19a to the temperature raising furnace 16a via the gate valve 17a, and is heated to reach the temperature range necessary for the vapor phase growth process by the temperature raising furnace 16a. The Thereafter, the fourth semiconductor wafer W4 is transferred from the temperature raising furnace 16a to the reaction furnace 11 previously held in the temperature range necessary for the vapor phase growth process through the gate valve 13b, and is vapor phase grown by the reaction furnace 11. Processing is performed (time t3 shown in FIG. 6). Thereafter, the fourth semiconductor wafer W4 is transferred from the reaction furnace 11 to the temperature lowering furnace 16b through the gate valve 13a, and the temperature is lowered by the temperature lowering furnace 16b. Thereafter, the fourth semiconductor wafer W4 is transferred from the temperature decreasing furnace 16b to the front chamber 19a through the gate valve 17b. The temperature change of the fourth semiconductor wafer W4 is the same as that of the graph G4 shown in FIG. Thereafter, the same processes as those performed on the first semiconductor wafer W1 and the fourth semiconductor wafer W4 described above are the second semiconductor wafer W2, the fifth semiconductor wafer W5, and the third semiconductor wafer W3. And so on. Each temperature change of the 2nd semiconductor wafer W2, the 5th semiconductor wafer W5, and the 3rd semiconductor wafer W3 is the same as that of graph G2, graph G5, and graph G3 shown in FIG.

実施形態に係る気相成長装置の構成を示す図である。It is a figure which shows the structure of the vapor phase growth apparatus which concerns on embodiment. 実施形態に係るカバー部及び半導体ウェハ搬送部の構成を示す図である。It is a figure which shows the structure of the cover part and semiconductor wafer conveyance part which concern on embodiment. 実施形態に係る反応炉内における原料ガスの流れを説明するための図である。It is a figure for demonstrating the flow of the source gas in the reaction furnace which concerns on embodiment. 実施形態に係るカバー部のガス供給口と半導体ウェハ搬送部の排気口とを説明するための図である。It is a figure for demonstrating the gas supply port of the cover part which concerns on embodiment, and the exhaust port of a semiconductor wafer conveyance part. 実施形態に係る気相成長装置の動作を説明するためのフローチャートである。It is a flowchart for demonstrating operation | movement of the vapor phase growth apparatus which concerns on embodiment. 実施形態に係る気相成長装置の動作を説明するための図である。It is a figure for demonstrating operation | movement of the vapor phase growth apparatus which concerns on embodiment. 実施形態に係る気相成長装置の変形例を示す図である。It is a figure which shows the modification of the vapor phase growth apparatus which concerns on embodiment.

Explanation of symbols

１…気相成長装置、１１…反応炉、１３ａ，１３ｂ，１７ａ，１７ｂ…ゲートバルブ、１４ａ，１４ｂ…連結路、１５ａ，１５ｂ…昇降温炉、１６ａ…昇温炉、１６ｂ…降温炉、１８ａ，１８ｂ…連結路、１９ａ，１９ｂ…前室、２１…搬送部、２１ａ…台車移動レール、２１ｂ…カバー部移動レール、２３…ガス供給装置、２５ａ，２５ｃ，２５ｂ…ガス供給部、２７ａ，２７ｃ，２７ｂ，４１ａ，４１ｂ，４１ｃ…開閉バルブ、２９ａ，２９ｂ，２９ｃ，３０ａ，３０ｂ，３０ｃ…計測器、３１ａ，３１ｂ，３１ｃ…加熱装置、３３ａ，３３ｂ，３３ｃ…ガス排気部、３５…フィルタ、３７…ポンプ、３９…除害装置、４３…制御装置、５１…サセプタ搬送台車、５１ａ，５５ａ…孔部、５３…サセプタ、５５…プレート、５６…半導体ウェハ搬送部、５７…排気口、６１…カバー部、６１ａ，６１ｂ…側壁、６３…ガス供給口、６５ａ，６５ａ…搬入搬出口、Ｐ１〜Ｐ８…ガス供給ライン。
DESCRIPTION OF SYMBOLS 1 ... Vapor growth apparatus, 11 ... Reactor, 13a, 13b, 17a, 17b ... Gate valve, 14a, 14b ... Connection path, 15a, 15b ... Heating / lowering furnace, 16a ... Heating furnace, 16b ... Temperature reducing furnace, 18a , 18b ... connecting path, 19a, 19b ... front chamber, 21 ... transport section, 21a ... carriage moving rail, 21b ... cover section moving rail, 23 ... gas supply device, 25a, 25c, 25b ... gas supply section, 27a, 27c , 27b, 41a, 41b, 41c ... open / close valve, 29a, 29b, 29c, 30a, 30b, 30c ... measuring instrument, 31a, 31b, 31c ... heating device, 33a, 33b, 33c ... gas exhaust part, 35 ... filter, 37 ... Pump, 39 ... Detoxifying device, 43 ... Control device, 51 ... Susceptor transport carriage, 51a, 55a ... Hole, 53 ... Susceptor, 55 ... Plate, 56 ... Semiconductor E c transport unit, 57 ... exhaust port, 61 ... cover portion, 61a, 61b ... side wall, 63 ... gas inlet, 65a, 65a ... loading opening, P1 to P8 ... gas supply line.

Claims

A reactor for performing vapor phase growth on a semiconductor wafer;
A first heating / cooling furnace that raises the temperature of the semiconductor wafer to a temperature range necessary for the vapor phase growth process and lowers the temperature of the semiconductor wafer after the vapor phase growth process;
The semiconductor wafer heated to the temperature range required for the vapor phase growth process by the first temperature raising and lowering furnace is transferred from the first temperature raising and lowering furnace to the reaction furnace, and the vapor phase growth process is performed by the reaction furnace. And a transfer part for transferring the semiconductor wafer subjected to the process from the reaction furnace to the first heating / cooling furnace,
The vapor phase growth apparatus characterized in that the reaction furnace performs the vapor phase growth process while maintaining a temperature in the reaction furnace in a temperature range necessary for the vapor phase growth process.

Further comprising a second heating / cooling furnace that raises the temperature of the semiconductor wafer to a temperature range necessary for the vapor phase growth treatment, and lowers the temperature of the semiconductor wafer after the vapor phase growth treatment;
The transfer unit transfers the semiconductor wafer heated to the temperature range necessary for the vapor phase growth process by the second heating / cooling furnace from the second heating / cooling furnace to the reaction furnace, 2. The vapor phase growth apparatus according to claim 1, wherein the semiconductor wafer subjected to the vapor phase growth process is transferred from the reaction furnace to the second heating / cooling furnace.

The vapor deposition apparatus according to claim 1 or 2, wherein the heating / cooling furnace includes a gas supply unit for supplying gas into the heating / cooling furnace.

The reaction furnace has a cover part for covering the semiconductor wafer in the reaction furnace and the opening of the gas exhaust part provided in the reaction furnace for exhausting the gas in the reaction furnace,
The said cover part has a gas supply port connected to the gas supply part provided in this reaction furnace which supplies gas in the said reaction furnace, The Claim 1 characterized by the above-mentioned. The vapor phase growth apparatus described.

Raising the temperature of the semiconductor wafer in a temperature raising furnace to a temperature range necessary for vapor phase growth processing;
After the temperature rise performed in the temperature raising furnace, the semiconductor wafer is transferred from the temperature rising furnace to a reaction furnace previously held in a temperature range necessary for vapor phase growth processing via a transfer unit;
Performing a vapor phase growth process on the semiconductor wafer in the reactor;
After the vapor phase growth process performed in the reaction furnace, the semiconductor wafer is transferred from the reaction furnace to the cooling furnace through a transfer unit;
And a step of lowering the temperature of the semiconductor wafer in the temperature lowering furnace.