JP2007240514A - Manufacturing method for radiation image conversion panel, and manufacturing device for radiation image conversion panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a radiation image conversion panel capable of restraining a point defect from being generated, and capable of obtaining an image of high grade reduced in a defect. <P>SOLUTION: This manufacturing method for forming a phosphor layer by a vapor deposition method in a closed vacuum chamber 12 has a process for setting a substrate 70 in the vacuum chamber 12, a process for removing dust from a surface 70d of the substrate under the condition where the substrate 70 is set, and a process for forming the phosphor layer on the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a radiation image conversion panel and a radiation image conversion panel manufacturing apparatus used for recording (imaging) a radiation image in computed radiography (CR) or the like, and more particularly, in a phosphor layer made of columnar crystals. The present invention relates to a method for manufacturing a radiation image conversion panel and an apparatus for manufacturing a radiation image conversion panel, in which the growth state of columnar crystals is made uniform and a high-quality image with few point defects is obtained.

  When irradiated with radiation (X-rays, α-rays, β-rays, γ-rays, electron beams, ultraviolet rays, etc.), a part of this radiation energy is accumulated and then irradiated with excitation light such as visible light. In addition, phosphors that exhibit stimulated light emission according to the stored energy are known. This phosphor is called a stimulable phosphor (accumulating phosphor) and is used for various applications such as medical applications.

For example, a radiation image information recording / reproducing system using a radiation image conversion panel having the photostimulable phosphor film (stimulable phosphor layer) is known. For example, an FCR (Fuji Photo Film) manufactured by Fuji Photo Film Co., Ltd. (Computed Radiography) etc.
In this radiation image information recording / reproducing system, radiation image information of a subject is recorded on a radiation image conversion panel (stimulable phosphor layer) by irradiating X-rays or the like through a subject such as a human body. After recording, the radiation image conversion panel is scanned two-dimensionally with excitation light such as laser light to generate stimulated emission, and this stimulated emission light is photoelectrically read to obtain an image signal. Based on this image signal The reproduced image is output as a radiation image of a subject to a display device such as a CRT or a recording material such as a photographic photosensitive material.

The radiation image conversion panel is usually prepared by dispersing a stimulable phosphor powder in a solvent containing a binder or the like, and applying this paint to a panel-like support made of glass or resin. It is produced by drying.
In contrast, a phosphor panel in which a stimulable phosphor layer (hereinafter also referred to as a phosphor layer) is formed on a support by a vacuum film formation method (vapor phase film formation method) such as vacuum evaporation or sputtering is also available. Are known. The phosphor layer formed by the vacuum film formation method is formed in a vacuum, so there are few impurities, and since there are almost no components such as binders other than the stimulable phosphor, there is little variation in performance, and the luminous efficiency Has excellent properties of being very good. Furthermore, since the phosphor layer is formed of a phosphor columnar structure, a good image quality with high sharpness can be obtained.

  Further, in the radiation image conversion panel, when dust such as dust or dust adheres at the time of reading, and when dust such as dust or dust enters during manufacturing, there is a possibility that the obtained image may be defective. For this reason, various techniques have been disclosed in order to suppress the occurrence of such image defects (see Patent Documents 1 to 3).

Patent Document 1 discloses a radiation image reading apparatus provided with a cleaning mechanism for a storage phosphor sheet. The cleaning mechanism of Patent Document 1 has a rotating cleaning roller pair and a neutralizing brush pair.
In the radiographic image reading apparatus of Patent Document 1, the cleaning mechanism removes dust attached to the surface of the phosphor sheet and removes the surface charge. This eliminates the influence of the radiation image due to the charge and the adverse effect of the radiation image due to the adhesion of dust.

Further, the radiation image reading apparatus of Patent Document 2 includes a plurality of elastic belts arranged such that a transport system for transporting the stimulable phosphor panel on which the radiation image is recorded is positioned on both sides of the stimulable phosphor panel. Is provided.
In the radiation image reading apparatus of Patent Document 2, a plurality of elastic belts are driven to convey a stimulable phosphor panel sandwiched between a plurality of elastic belts. As a result, when the stimulable phosphor panel is transported, it is prevented from being scratched or distorted and deteriorated over time, and further, dust, dust, It prevents that foreign matters, such as, adhere. Also in this Patent Document 2, it is possible to prevent dust from adhering to the phosphor layer and to prevent image degradation that occurs during image reading.

Furthermore, in the method for producing the radiation image conversion panel of Patent Document 3, dust on the surface of at least one of the protective layer and the photostimulable phosphor layer is removed by a removal method using an adhesive force, and then the protective layer and the photostimulability are obtained. What has the process of making each fluorescent substance layer adhere is indicated.
As described above, in Patent Document 3, by providing a dust removal method in the process of manufacturing the radiographic image conversion panel, the radiographic image conversion panel that is repeatedly used is read by a reading unit via a conveyance system or the like. The image reading accuracy is prevented from deteriorating due to the dust that has entered the screen or the dust adhering to the storage phosphor sheet, and an excellent image with less noise can be obtained.

JP-A-5-72656 Japanese Patent Laid-Open No. 11-344781 Japanese Patent Laid-Open No. 2005-43050

However, in the radiation image reading device of Patent Document 1 and the radiation image reading device of Patent Document 2, dust adhering is removed when an image is read, and when dust is mixed in the radiation image conversion panel. , There is a problem that can not be addressed.
Further, in Patent Document 3, although dust is prevented from being mixed between the protective layer and the phosphor layer, mixing of dust, dust and the like is not suppressed when the phosphor layer is formed. . As a result, when dust, dust, or the like is mixed in forming the phosphor layer, the manufactured radiation image conversion panel may cause image defects as shown below.

As in the radiation image conversion panel 100 shown in FIG. 11, a columnar crystal 106 normally grows, and the columnar crystal 106 constitutes a stimulable phosphor layer 104 (hereinafter referred to as a phosphor layer 104). Further, the surface 104a of the phosphor layer 104 has a substantially uniform height.
However, when the phosphor layer 104 is formed on the substrate 102, if there is dust 108 on the substrate 104, an abnormally grown crystal 106a is generated starting from the dust 108. As a result, in the phosphor layer 104, from the surface 104a. A protruding hillock H is generated. Such an abnormally grown crystal 106a causes a point defect in which an image that is originally black becomes white in the obtained image. For this reason, in the case where mixing of dust, dust and the like is not suppressed, it is not always possible to manufacture a radiation image conversion panel that can obtain a high-quality image with few defects. Furthermore, at present, there is no disclosure of suppressing the generation of abnormally grown crystals 106 in the phosphor layer 104.

  An object of the present invention is to provide a radiation image conversion panel capable of producing a radiation image conversion panel that eliminates the problems based on the prior art, suppresses the occurrence of point defects, and obtains a high-quality image with few defects. And a radiation image conversion panel manufacturing apparatus.

  In order to achieve the above object, a first aspect of the present invention is a method for manufacturing a radiation image conversion panel in which a phosphor layer is formed by vapor deposition in a closed vacuum chamber, the vacuum chamber comprising: A radiation image conversion panel comprising: a step of setting a substrate in the substrate; a step of removing dust from the surface of the substrate while the substrate is set; and a step of forming the phosphor layer on the substrate. The manufacturing method of this is provided.

In the present invention, the step of removing dust from the surface of the substrate is preferably performed in a state where the vacuum chamber is at atmospheric pressure.
Moreover, in this invention, it has the process of setting the film-forming material used as the said fluorescent substance layer in the said vacuum chamber between the process of setting the said board | substrate, and the process of dedusting the surface of the said board | substrate. preferable.

  Furthermore, in the present invention, the film forming material that becomes the phosphor layer is added to the vacuum chamber between the step of setting the substrate and the step of removing dust from the surface of the substrate or before the step of setting the substrate. It is preferable to have the process of setting in.

  Furthermore, in the present invention, the step of removing dust from the surface of the substrate uses at least one of a dust removal method using a cleaning roller, a method of spraying a gas on the substrate, and a method of removing electricity from the substrate. It is preferred that

Furthermore, in the present invention, the cleaning roller has a roller portion that is in contact with the surface of the substrate, and the roller portion is mainly composed of at least one of butyl rubber, silicon, and urethane rubber. It is preferable that it is comprised by what.
Here, the dust removal by the cleaning roller is preferably performed excluding the vicinity of the end portion of the phosphor layer forming region of the substrate. In this case, the total length of the phosphor layer forming region is a, the end It is preferable to satisfy the expression “0.03 ≦ b / a ≦ 0.4”, where b is the width of the region in the vicinity of the portion where no dust removal is performed.

Further, in the present invention, the step of removing dust from the surface of the substrate uses a method of spraying the gas and a method of discharging the substrate, and a method of discharging the substrate includes a discharging device. It is preferable to be used.
Moreover, in this invention, it is preferable that the said static elimination apparatus is an ion air generator.

  According to a second aspect of the present invention, there is provided a radiation image conversion panel manufacturing apparatus for forming a phosphor layer on a surface of a sheet-like substrate by vacuum deposition, wherein the vacuum chamber and vacuum exhaust for exhausting the inside of the vacuum chamber are provided. And a resistance heating means provided in the vacuum chamber for heating the film forming material of the phosphor layer housed in the container by resistance heating and releasing the vapor of the film forming material from the opening of the container A substrate holding unit provided in the vacuum chamber and holding the substrate above the resistance heating unit; and a dust removing unit provided in the vacuum chamber and removing dust from the surface of the substrate. A radiation image conversion panel manufacturing apparatus is provided.

  The present invention further includes a control unit that controls the dust removing unit, and a first sensor that is connected to the control unit and detects that the substrate is held by the substrate holding unit, After receiving the detection result of one sensor, the control unit preferably causes the dust removing unit to remove the surface of the substrate.

  The present invention further includes a control unit that controls the dust removing unit, and a second sensor that is connected to the control unit and detects that the film forming material is stored in the container. After receiving the detection result of the second sensor, the control unit preferably causes the dust removing unit to remove the surface of the substrate.

  Furthermore, in this invention, it has a control part which controls the said dust removal part, and a 3rd sensor connected to the said control part and detects that the said vacuum chamber was obstruct | occluded, The said 3rd After receiving the detection result of the sensor, the control unit preferably causes the dust removing unit to remove the surface of the substrate.

  Furthermore, in the present invention, it further includes a control unit that controls the dust removing unit, and a vacuum gauge that is connected to the control unit and measures the pressure in the vacuum chamber, and is measured by the vacuum gauge. When the pressure is equal to or lower than a predetermined pressure, the control unit preferably causes the dust removing unit to remove the surface of the substrate.

  According to the present invention, there is further provided a shutter provided in the opening of the container so as to be opened and closed, a control unit for controlling the dust removing unit, and a fourth unit connected to the control unit for detecting opening and closing of the shutter. Preferably, the control unit causes the dust removing unit to remove the surface of the substrate after receiving the detection result that the shutter is opened by the fourth sensor.

  According to the manufacturing method of the radiation image conversion panel of the present invention, the step of setting the substrate in the vacuum chamber, the step of removing dust from the surface of the substrate while the substrate is set, and the vapor phase of the phosphor layer on the substrate. The substrate is set in the vacuum chamber by removing the dust on the substrate surface immediately before forming the phosphor layer on the substrate, and thereafter various operations or operation of the apparatus, etc. As a result, fine dust and dust are generated and removed even when the fine dust and dust that are the starting point of abnormal growth adhere to the substrate surface. And since a fluorescent substance layer is formed in the substrate surface of a clean state, generation | occurrence | production of abnormal nucleus growth is suppressed and generation | occurrence | production of hillock is also suppressed. Thereby, the radiation image conversion panel which can obtain a high quality image with few point defects can be manufactured.

Hereinafter, the manufacturing method of a radiation image conversion panel and the radiation image conversion panel manufacturing apparatus of the present invention will be described in detail based on preferred embodiments shown in the attached drawings.
Fig.1 (a) is typical sectional drawing which shows 1st Embodiment of the radiographic image conversion panel manufacturing apparatus used for the manufacturing method of the radiographic image conversion panel of this invention, (b) is FIG. It is a typical sectional side view of the radiographic image conversion panel manufacturing apparatus shown in FIG.

The radiation image conversion panel manufacturing apparatus 10 (hereinafter, also referred to as the manufacturing apparatus 10) shown in FIG. 1 separates a material that becomes a storage phosphor (matrix) and a material that becomes an activator (activator). A stimulable phosphor image conversion panel is manufactured by forming a stimulable phosphor layer (hereinafter referred to as a phosphor layer) made of a stimulable phosphor on the surface 70d of the substrate 70 by binary vacuum evaporation that evaporates. It is a device to do.
Such a manufacturing apparatus 10 basically includes a vacuum chamber 12, a substrate holding and transporting mechanism 14, a heating evaporation unit (resistance heating unit) 16, a vacuum pump (vacuum exhausting unit) 18, a gas introduction nozzle 19, And the control unit 20. Needless to say, the manufacturing apparatus 10 of the present invention may have various components other than those described above, which are included in known vacuum deposition apparatuses. For example, a vacuum gauge (not shown) for measuring the degree of vacuum in the vacuum chamber 12 is provided and connected to the control unit 20.
In the present embodiment, the substrate 70 is housed in the substrate holder 39, held together with the substrate holder 39 by the substrate holding / transporting mechanism 14, set in the vacuum chamber 12, and linearly transported.
Further, the substrate holder 39 is configured to hold the substrate 70 in such a manner that the substrate 70 is inserted from the side surface thereof and locked and held inside.

  Further, the present invention is not limited to the binary vacuum deposition apparatus as shown in FIG. 1, and may be an apparatus for performing a single vacuum deposition in which all film forming materials are mixed and stored in an evaporation source. Alternatively, an apparatus that performs vacuum deposition of three or more elements may be used, but preferably a binary or more multi-source vacuum deposition apparatus that stores a plurality of film forming materials in separate evaporation sources.

In the present invention, as a preferred example, cesium bromide (CsBr) as a phosphor component and europium bromide (EuBr _x (x is usually 2 to 3) as an activator component, 2 is preferable) as a film-forming material, and binary vacuum deposition by resistance heating is performed to form a phosphor layer made of CsBr: Eu, which is a storage phosphor, on a substrate 70 to convert a radiation image. Make a panel.
In addition, the manufacturing apparatus 10 having the gas introduction nozzle 19 for introducing an inert gas during film formation preferably introduces the gas while evacuating the vacuum chamber 12 to a high degree of vacuum. An inert gas is introduced by a nozzle 19 to make the inside of the vacuum chamber 12 have a degree of vacuum of about 0.1 Pa to 10 Pa (hereinafter referred to as a medium vacuum). (Cesium bromide and europium bromide) are heated and evaporated, and the substrate 70 is conveyed linearly by the substrate holding and conveying mechanism 14 (hereinafter referred to as linear conveyance), and the phosphor layer is formed on the substrate 70 by vacuum deposition. Do the membrane.

In the present invention, various photostimulable phosphors for forming the phosphor layer can be used. For example, the following photostimulable phosphors are preferably exemplified.
For example, the photostimulable phosphors described in US Pat. No. 3,859,527, “SrS: Ce, Sm”, “SrS: Eu, Sm”, “ThO ₂ : Er”, and “La ₂ O ₂ S: Eu, Sm”.

“ZnS: Cu, Pb”, “BaO · xAl ₂ O ₃ : Eu (provided that 0.8 ≦ x ≦ 10)” and the general formula “M ^II ” disclosed in JP-A-55-12142 Stimulable phosphor represented by “O.xSiO ₂ : A”.
(In the above formula, M ^II is at least one selected from the group consisting of Mg, Ca, Sr, Zn, Cd and Ba, and A is Ce, Tb, Eu, Tm, Pb, Tl, Bi and Mn. And at least one selected from the group consisting of 0.5 ≦ x ≦ 2.5.)

A stimulable phosphor represented by the general formula “LnOX: xA” disclosed in JP-A No. 55-12144.
(In the above formula, Ln is at least one selected from the group consisting of La, Y, Gd and Lu, X is at least one of Cl and Br, and A is at least one of Ce and Tb. Also, 0 ≦ x ≦ 0.1.)

A stimulable phosphor represented by the general formula “(Ba _1-x , M ²⁺ _x ) FX: yA” disclosed in JP-A No. 55-12145.
(In the above formula, M ²⁺ is at least one selected from the group consisting of Mg, Ca, Sr, Zn and Cd, and X is at least one selected from the group consisting of Cl, Br and I. , A is at least one selected from the group consisting of Eu, Tb, Ce, Tm, Dy, Pr, Ho, Nd, Yb and Er, and 0 ≦ x ≦ 0.6, 0 ≦ y ≦ 0.2.)

A stimulable phosphor represented by the general formula “xM ₃ (PO ₄ ) ₂ .NX ₂ : yA” or “M ₃ (PO ₄ ) ₂ .yA” disclosed in Japanese Patent Application Laid-Open No. 59-38278.
(In the above formula, M and N are each at least one selected from the group consisting of Mg, Ca, Sr, Ba, Zn and Cd, and X is selected from the group consisting of F, Cl, Br and I) A is at least one selected from the group consisting of Eu, Tb, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Sb, Tl, Mn, and Sn. 0 ≦ x ≦ 6 and 0 ≦ y ≦ 1.)

A photostimulable phosphor represented by the general formula “nReX ₃ · mAX ′ ₂ : xEu” or “nReX ₃ · mAX ′ ₂ : xEu, ySm”.
(In the above formula, Re is at least one selected from the group consisting of La, Gd, Y and Lu, A is at least one selected from the group consisting of Ba, Sr and Ca, and X and X 'Is at least one selected from the group consisting of F, Cl and Br. Also, 1 × 10 ⁻⁴ <x <3 × 10 ⁻¹ and 1 × 10 ⁻⁴ <y <1 × 10 ⁻¹ , and further 1 × 10 ⁻³ <n / m <7 × 10 ⁻¹ .)

An alkali halide photostimulable phosphor represented by the general formula “M ^I X · aM ^II X ′ ₂ · bM ^III X ″ ₃ : cA” disclosed in JP-A-61-72087.
(In the above formula, M ^I is at least one selected from the group consisting of Li, Na, K, Rb and Cs, and M ^II is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and at least one trivalent metal selected from the group consisting of Ni, M ^III is, Sc, Y, La, Ce , Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal selected from the group consisting of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are selected from the group consisting of F, Cl, Br and I A is from Eu, Tb, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, Bi and Mg. At least one selected from the group consisting of . Also, a 0 ≦ a <0.5, a 0 ≦ b <0.5, it is 0 <c ≦ 0.2.)

A stimulable phosphor represented by the general formula “(Ba _1-X , M ^II _X ) F ₂ .aBaX ₂ : yEu, zA” disclosed in JP-A-56-116777.
(In the above formula, M ^II is at least one selected from the group consisting of Be, Mg, Ca, Sr, Zn and Cd, and X is at least one selected from the group consisting of Cl, Br and I. A is at least one of Zr and Sc, 0.5 ≦ a ≦ 1.25, 0 ≦ x ≦ 1, and 1 × 10 ⁻⁶ ≦ y ≦ 2 × 10 ⁻¹ . Yes, 0 <z ≦ 1 × 10 ⁻²

A stimulable phosphor represented by the general formula “M ^III OX: xCe”, disclosed in JP-A-58-69281.
(In the above formula, M ^III is at least one trivalent metal selected from the group consisting of Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb and Bi; Is at least one of Cl and Br, and 0 ≦ x ≦ 0.1.)

A stimulable phosphor represented by the general formula “Ba _1-x MaLaFX: yEu ²⁺ ” disclosed in JP _-A- 58-206678.
(In the above formula, M is at least one selected from the group consisting of Li, Na, K, Rb and Cs, and L is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, It is at least one trivalent metal selected from the group consisting of Tb, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, In and Tl, and X consists of Cl, Br and I (At least one selected from the group, 1 × 10 ⁻² ≦ x ≦ 0.5, 0 ≦ y ≦ 0.1, and a is x / 2.)

The stimuli represented by the general formula “M ^II FX · aM ^I X ′ · bM ′ ^II X ″ ₂ · cM ^III X ₃ · xA: yEu ²⁺ ” disclosed in JP-A-59-75200 Phosphor. (In the above formula, M ^II is at least one selected from the group consisting of Ba, Sr and Ca, and M ^I is at least one selected from the group consisting of Li, Na, K, Rb and Cs. , M ′ ^II is at least one divalent metal of Be and Mg, M ^III is at least one trivalent metal selected from the group consisting of Al, Ga, In, and Tl, and A Is a metal oxide, and X, X ′, and X ″ are at least one selected from the group consisting of F, Cl, Br, and I. Also, 0 ≦ a ≦ 2, 0 ≦ b ≦ 1 × 10 ⁻² , 0 ≦ c ≦ 1 × 10 ⁻² , a + b + c ≧ 10 ⁻⁶ , 0 <x ≦ 0.5, and 0 <y ≦ 0.2.)

In particular, the alkali halide photostimulable phosphor disclosed in Japanese Patent Application Laid-Open No. 61-72087 is preferable in that it has excellent photostimulated luminescence properties and the effects of the present invention can be satisfactorily obtained. In particular, alkali halide photostimulable phosphors in which M ^I contains at least Cs, X contains at least Br, and A is Eu or Bi are preferable. A photostimulable phosphor represented by “CsBr: Eu” is preferable.

In the present embodiment, the vacuum chamber 12 is a known vacuum chamber (bell jar, vacuum chamber) that is formed of iron, stainless steel, aluminum or the like and is used in a vacuum deposition apparatus.
A vacuum pump 18 is connected to one side surface 12b of the vacuum chamber 12 via a diffuser 18a. For example, an oil diffusion pump is used as the vacuum pump 18. In addition, the vacuum pump 18 is not specifically limited, The various pumps utilized with the vacuum evaporation system can be utilized if the required ultimate vacuum degree can be achieved. As an example, a cryopump, a turbomolecular pump, or the like can be used, and a cryocoil or the like may be used in combination as an auxiliary. In the manufacturing apparatus 10 for forming the phosphor layer, it is preferable that the ultimate vacuum in the vacuum chamber 12 is a vacuum higher than 8.0 × 10 ⁻⁴ Pa.

Moreover, the door 13 is provided in the other side surface 12c facing the one side surface 12b of the vacuum chamber 12 so that opening and closing is possible.
In the present embodiment, the door 13 is opened, and the substrate 70 is loaded into the vacuum chamber 12 and the film forming material is loaded. Further, the door 13 is closed, the vacuum chamber 12 is closed, and vacuum deposition is performed.

The gas introduction nozzle 19 also has a means for connecting to a cylinder and a means for adjusting a gas flow rate (or connected thereto), and is a known gas introduction means used in a vacuum vapor deposition apparatus or a sputtering apparatus, An inert gas such as argon gas (Ar gas), nitrogen gas, or other rare gas is introduced into the vacuum chamber 12 in order to form the phosphor layer by vacuum deposition in the medium vacuum. This inert gas is a gas that does not react with the substrate 70 and the phosphor layer during vacuum deposition.
An inert gas is introduced into the vacuum chamber 12 through an opening (gas introduction port) 19 a of the gas introduction nozzle 19. The gas introduction nozzle 19 (opening 19a) is provided, for example, in the vicinity of the heating evaporation unit 16 and on the bottom surface 12a of the vacuum chamber 12.

  The substrate holding / conveying mechanism 14 holds the substrate 70 together with the substrate holder 39 and conveys it linearly. As schematically shown in FIG. 2, the driving means 22, the linear motor guide 24, and the substrate holding means 26 are provided. It consists of. 2A is a schematic plan view showing the substrate holding / conveying means of the radiation image conversion panel manufacturing apparatus shown in FIG. 1A, and FIG. 2B is the radiation image conversion panel manufacturing shown in FIG. It is a typical front view which shows the board | substrate holding | maintenance conveyance means of an apparatus, (c) is a typical side view which shows the board | substrate holding | maintenance conveyance means of the radiation image conversion panel manufacturing apparatus shown in FIG.

The drive unit 22 moves (reciprocates) the substrate holding unit 26 in the substrate transfer direction (hereinafter referred to as the transfer direction) M of the substrate 70, and extends in the transfer direction M of the substrate 70 and is rotated by the holding member 30. A well-known linear moving mechanism using a ball screw, which includes a screw shaft 32a that is freely supported, a ball screw 32 including a nut portion 32b that is screwed to the screw shaft 32a, and a motor 34 that rotates the screw shaft 32a. It is.
In the present invention, the driving means is not limited to the one using the ball screw 32 and the motor 34, and is necessary such as a conveying means using a cylinder, a conveying means using a ring-shaped chain rotated by the motor and the motor. Various known linear moving (conveying) means can be used as long as they have excellent heat resistance.

The linear motor guide 24 (hereinafter referred to as the LM guide 24) assists the linear conveyance of the substrate holding means 26 (that is, the substrate 70) by the driving means 22, and the guide rail 24a and the guide rail 24a are movable in the longitudinal direction. It is a well-known linear motor guide which consists of the engaging member 24b which engages with.
Two guide rails 24 a extend in the transfer direction M of the substrate 70, are spaced apart from each other at a target position with the screw shaft 32 a as an axis, and both are fixed to the ceiling surface of the vacuum chamber 12. On the other hand, a total of four engaging members 24b are fixed to the substrate holding means 26 (the upper surface of a base 36 to be described later) so as to be engaged with each guide rail 24a two by two.

  The substrate holding means 26 (hereinafter referred to as holding means 26) holds the substrate 70 together with the substrate holder 39 and is moved linearly by the driving means 22 while being guided by the LM guide 24. 36, a holding mechanism 38, and a heat insulating member 40.

The base 36 is a rectangular flat plate member that is horizontal when the manufacturing apparatus 10 is properly installed.
The nut portion 32b of the ball screw 32 is fixed at the center of the upper surface of the substrate 36, and the LM guide 24 is positioned at a symmetrical position on the diagonal line of the upper surface of the substrate 36 according to the interval between the two guide rails 24a. The engaging member 24b is fixed.

The holding mechanism 38 includes an attachment member 38 a and a holding member 38 b, and four holding mechanisms 38 are arranged at the corners of the base 36.
The attachment member 38a has a rectangular cross-sectional substantially C-shaped shape. The mounting member 38a has a C-shaped open portion facing inward, and a part of the C-shaped ceiling surface is placed on the corner of the base 36 from the outside in the direction orthogonal to the transport direction M. Fixed to hang down. Accordingly, the holding means 26 has a space larger than the area of the base 36 at the lower part of the base 36.

  The holding member 38b has holding means for the substrate holder 39 (substrate 70) at the lower end, and is suspended and fixed to the mounting member 38a. That is, the holding mechanism 38 that holds the substrate holder 39 (substrate 70) is suspended from the base 36 near the corner.

In the present invention, the method of holding the substrate holder 39 (substrate 70) by the holding member 38b is not particularly limited, and a plate-like object from the top, such as a method using a jig or the like, a method using static electricity, a method using adsorption, or the like. Various known methods for holding the can be used. Further, if possible depending on the vapor deposition region of the phosphor layer on the substrate 70, holding means for holding the four corners of the substrate holder 39 (substrate 70) from below using a jig or the like, and the substrate holder 39 (from below) A holding means for holding the four sides of the substrate 70) may be used.
Further, a lower end position of the holding member 38b, that is, a height at which the substrate 70 is held / conveyed by a method such as inserting a spacer between the mounting member 38a and the holding member 38b, providing an adjustment means using a screw, or providing an elevating means using a cylinder. The height may be adjustable.

As described above, the base 36 is linearly conveyed by the driving means 22. Accordingly, the substrate holding and transporting mechanism 14 holds, for example, the vicinity of the four corners of the substrate holder 39 (substrate 70) by the holding mechanism 38 and transports the holding means 26 by the driving means 22, so that the substrate 70 and the substrate holder 39 are linear. Transport.
In the present invention, by forming the phosphor layer by medium vacuum vacuum deposition by resistance heating while linearly transporting the substrate 70 as described above, the phosphor layer has good crystallinity and high film thickness distribution uniformity. The formation of is realized.

For example, a phosphor layer of a radiation image conversion panel that is supposed to read a radiation image by a line sensor is required to have high film thickness distribution uniformity within ± 3%, preferably within ± 2%.
When the phosphor layer is formed by vacuum evaporation, the substrate is usually rotated to form a film in order to form a phosphor layer having a uniform film thickness over the entire surface. Here, when the substrate 70 is rotated, the velocity (linear velocity) of the substrate surface (film formation surface) varies in the radial direction.

  In the vapor deposition by electron beam heating, since the vapor deposition is performed at a high degree of vacuum, the substrate and the evaporation source (the heating evaporation part of the film forming material = the crucible) can be disposed sufficiently apart from each other. As a result, it is possible to uniformly expose the vapor to the entire surface of the substrate in a state where the vapor of the film forming material is sufficiently diffused, and this difference in the velocity of the substrate surface in the radial direction is not a big problem. In particular, high film thickness distribution uniformity can be ensured by rotating the substrate at a high speed.

Here, the phosphor layer made of the various storage phosphors preferably formed by the production method of the present invention, particularly the phosphor layer made of an alkali halide storage phosphor, particularly the phosphor made of CsBr: Eu. When a layer is formed by vacuum deposition (film formation), the system is once evacuated to a high degree of vacuum, and then an inert gas such as Ar gas or nitrogen gas is introduced into the system while maintaining the evacuation. The phosphor layer is preferably formed as a medium vacuum of about 0.1 to 10 Pa, particularly a medium vacuum of about 0.5 to 3 Pa.
As a result, a phosphor layer having a good columnar crystal structure can be formed, and a radiation image conversion panel having excellent photostimulated emission characteristics and image sharpness can be manufactured.

The production apparatus 10 of the present invention basically forms a phosphor layer in such a medium vacuum, and introduces an inert gas into the vacuum chamber 12 from the gas introduction nozzle 19 (opening 19a). However, vacuum deposition is performed by resistance heating in a medium vacuum.
In this degree of vacuum deposition in a medium vacuum, in order to ensure that the evaporated film forming material reaches the substrate 70, the distance between the evaporation source and the substrate 70 is set to, for example, about 100 mm, as compared with a normal case. Need to be shorter. For this reason, the vapor of the evaporation source reaches the substrate 70 before sufficiently diffusing. Therefore, even if the evaporation sources are arranged linearly in the radial direction so as to uniformly face the entire surface of the rotating substrate, a difference occurs in the facing time with the evaporation source in the radial direction due to the difference in the linear velocity of the substrate surface. As a result, a difference occurs in the exposure amount of the steam in the radial direction, and this difference becomes a difference in film thickness as it is.
That is, in the medium vacuum vacuum deposition performed by rotating the substrate, it is necessary to devise the arrangement of the evaporation source in the heating evaporation unit in order to uniformly expose the vapor to the entire surface of the substrate, for example, within ± 3% In order to realize a high film thickness distribution uniformity, it is very difficult to set the position of the evaporation source.

On the other hand, in the manufacturing apparatus 10 of the present invention, the phosphor layer is formed by vacuum deposition while conveying the substrate 70 together with the substrate holder 39 in this way, so that the moving speed on the surface of the substrate 70 is entirely controlled. Can be uniform.
Therefore, the vapor of the film forming material can be uniformly exposed on the entire surface of the substrate 70 only by making the evaporation amount of the film forming material in the direction H perpendicular to the transport direction M uniform, and the position of the simple evaporation source Even with the setting, it is possible to form a phosphor layer with high uniformity of film thickness distribution. In addition, by carrying out film formation by performing reciprocal conveyance of linear conveyance, the dispersion state of europium (activator), which is a trace component, in the phosphor layer can also be suitably performed.

In the present invention, if the phosphor layer having a required film thickness can be formed, the substrate 70 during the film formation can be reciprocated either linearly or once (reciprocally). Multiple times may be performed. Further, the substrate transport path may be a zigzag shape or a wavy path as long as it is generally linear.
In general, the greater the number of times of passage through the upper portion of the heat evaporation unit 16 is, the higher the film thickness distribution uniformity can be. Therefore, the phosphor layer is formed by reciprocating a plurality of times. preferable. Further, the number of reciprocations may be determined appropriately according to the target film thickness of the phosphor layer or the target film thickness distribution uniformity, and the final conveyance may be in one direction. The conveyance speed of the linear conveyance is not particularly limited, and may be appropriately determined according to the speed limit of the LM guide 24, the number of reciprocations, the target phosphor layer thickness, and the like.

In the holding means 26 for holding the substrate holder 39 (substrate 70), a heat insulating member 40 is disposed immediately below the base 36 on which the nut portion 32b of the ball screw 32 and the engaging member 24b of the LM guide 24 are fixed. Is done. Here, as described above, in the manufacturing apparatus 10 in the illustrated example, the lower part of the base 36 is fixed by fixing the holding member 38b in a state of hanging from the base 36 using the substantially C-shaped attachment member 38a. It has a wider space than the base 36. Using this, in the illustrated example, the area of the heat insulating member 40 is made larger than the area of the base 36, and the entire lower surface of the base 36 is covered with the heat insulating member 40 with a sufficient margin.
The heat-insulating member 40 covers the base 36 with respect to a heating evaporation unit 16 (evaporation source) described later, so that the engagement member 24b of the LM guide 24 and the nut portion of the ball screw 32 are generated by radiant heat from the heating evaporation unit 16 or the like. This prevents 32b from being heated.

  As is clear from the above explanation, it has an excellent crystal structure that can realize high photostimulable light emission characteristics and image sharpness, and excellent film thickness uniformity that enables high-accuracy radiation image reading by a line sensor. In order to manufacture the radiation image conversion panel, it is necessary to carry out vacuum deposition in a medium vacuum by resistance heating while linearly transporting the substrate holder 39 (substrate 70).

Here, as is well known, a ball is incorporated in the engaging member 24b of the LM guide 24 and the nut portion 32b of the ball screw 32 in order to enable smooth movement, and also enables smooth rotation of the ball. In order to do so, a lubricant such as grease is injected. Further, in order to enable smooth driving without having a ball, a lubricant such as grease is usually injected into the sliding portions of the driving means and the conveying guide means. However, in the above-described vacuum deposition with medium vacuum, it is necessary to shorten the distance between the evaporation source and the substrate 70, so that the lubricant such as grease injected into the LM guide 24 and the like is heated to be in a molten state. In some cases, the liquid drops on the evaporation source or the like.
The heat insulating means 40 is for preventing such inconvenience from occurring.

The heat insulating member 40 is not particularly limited, and various members can be used as long as they can shield the radiant heat from the heating evaporation unit 16 and prevent the engagement member 24b and the nut portion 32b and the base 36 from being heated. Is available. As an example, a stainless plate, a steel plate, an aluminum plate, a molybdenum plate, etc. are illustrated. The fixing method may be appropriately determined according to the heat insulating member 40.
Further, if necessary, the cooling means for the heat-insulating member 40 may be provided by means such as flowing cold water through a pipe contacting the heat-insulating member 40 or by passing water through a plate (heat-insulating member 40).

As described above, in the illustrated example, as a preferred embodiment, the heat insulating member 40 has a larger area than the base 36, and the base on which the engaging member 24 b of the LM guide 24 and the nut portion 32 b of the ball screw 32 are fixed. 36 is disposed so as to cover the entire lower surface of 36. However, the present invention is not limited to this. For example, only the region corresponding to the engaging member 24b of the LM guide 24, or the region corresponding to the nut portion 32b of the ball screw 32, is applied to the heating evaporation unit 16. You may cover with a heat insulating member.
However, in order to more suitably prevent the engagement member 24b and the nut portion 32b from being heated, a member that can transfer heat to the heating evaporation portion 16 is possible as shown in the illustrated example. It is preferable to cover with the heat insulating member 40 as far as possible.

Below the vacuum chamber 12, a heating evaporation unit 16 is disposed.
The heating evaporation unit 16 is a part that evaporates cesium bromide and europium bromide, which are film forming materials for forming the phosphor layer, by resistance heating. By this heating evaporation unit 16, a vapor deposition field composed of vapors of cesium bromide and europium bromide (film deposition material vapor) is formed.

  As described above, as a preferred embodiment, the manufacturing apparatus 10 performs binary vacuum deposition in which cesium bromide as a phosphor component and europium bromide as an activator component are independently heated and evaporated. Is. Accordingly, the heating evaporation unit 16 includes a crucible (container) 50 serving as an evaporation source for cesium bromide (for phosphor) and a crucible (container) serving as an evaporation source for europium bromide (for activator). 52 is arranged.

Such crucibles 50 and 52 are formed of a refractory metal such as tantalum (Ta), molybdenum (Mo), tungsten (W), etc., as in the case of the resistance heating evaporation crucible in vacuum vapor deposition, and electrodes (not shown). When it is energized, it generates heat and heats / melts the filled film forming material to evaporate it.
In the present invention, the resistance heating power source (heating control means) is not particularly limited, and various systems used in the resistance heating apparatus such as a thyristor system, a DC system, and a thermocouple feedback system can be used. . Further, the output upon resistance heating is not particularly limited, and may be set as appropriate according to the film forming material to be used, the resistance value of the crucible forming material, the heat generation amount, or the like.

In the stimulable phosphor, the activator and the phosphor are, for example, about 0.0005 / 1 to 0.01 / 1 in molar concentration ratio, and most of the phosphor layer is the phosphor.
For this reason, in the illustrated example, the large amount of cesium bromide (for phosphor) crucible 50 is a cylindrical (drum-type) crucible. This crucible 50 has a slit-like opening extending in the axial direction of the drum on the side surface of the drum, and a rectangular cylindrical chimney 50a having an upper and lower opening surface having the same shape as the opening coincides with this opening. It is provided as a steam discharge part.
On the other hand, a low consumption crucible 52 for europium bromide (activator) is a small crucible formed by closing the upper surface of a normal boat type crucible with a lid having a chimney 52a similar to the above. Used.
By using such a crucible having a slit-shaped chimney, when bumping occurs due to local heating or abnormal heating in the crucible, the film-forming material suddenly jumps out of the crucible and adheres to the periphery or the substrate 70. It can prevent contamination. In particular, in medium-vacuum deposition using resistance heating, the substrate 70 and the deposition source need to be arranged close to each other as described above, so that the effect is great.

  Here, in the manufacturing apparatus 10, the crucibles 50 and 52 are arranged in the direction H (hereinafter referred to as the arrangement direction H) orthogonal to the transport direction M of the substrate 70, thereby evaporating the film forming material in the arrangement direction H. For example, a phosphor layer having a uniform film thickness distribution of ± 3% or less is formed by supplying the film-forming material vapor uniformly over the entire surface of the substrate 70 that is linearly conveyed. Note that the crucibles are insulated from each other by being separated or by inserting an insulating material.

As shown in FIG. 3, which is a schematic plan view of the heating evaporation unit 16, in the illustrated example, as an example, the crucible 50 for cesium bromide matches the axial direction of the cylinder (drum) with the arrangement direction H. , 6 are arranged. In the crucible 50, the electrodes are formed on the end face of the cylinder, and each crucible 50 is independently connected to a power source. Corresponding to each crucible 50, a crystal oscillator sensor 54 for measuring the evaporation amount of cesium bromide is arranged (in FIGS. 1A and 1B, the overall configuration of the apparatus is clarified). The amount of current supplied to the crucible 50 is controlled in accordance with the measurement result of the evaporation amount. Note that the evaporation amount may be controlled by a temperature sensor.
On the other hand, six crucibles 52 for europium bromide, which are boat-type crucibles, are arranged such that the longitudinal direction coincides with the arrangement direction H. The crucible 52 also has electrodes formed at both ends in the arrangement direction H, and is connected to independent power sources.

In the illustrated example, as a preferred embodiment, one crucible 50 and a crucible 52 are paired, that is, one evaporation source of cesium bromide that is a film forming material of a phosphor and an odor that is a film forming material of an activator. A pair of evaporation sources of europium fluoride are arranged so that they are aligned in the linear conveyance direction M of the substrate 70, and more preferably, they are arranged as close as possible in terms of the configuration of the apparatus and the crucible. is doing.
By adopting such a configuration, europium bromide vapor is sufficiently dispersed in the base cesium bromide vapor, and a slight amount of europium (activator) is uniformly dispersed in the phosphor layer. Thus, a phosphor layer having good photostimulable light emission characteristics and the like can be formed.

Further, in the row of crucibles 50 and the row of crucibles 52, the crucibles to be arranged are arranged as close to the arrangement direction H as possible in terms of the configuration of the apparatus and the crucible, and the row of crucibles is the substrate 70 It is preferable that the length sufficiently includes the size in the arrangement direction H.
By adopting such a configuration, it is possible to make the evaporation vapor amount of the film forming material in the arrangement direction H uniform, and to form a phosphor layer with higher film thickness distribution uniformity.

The number of crucible rows in the arrangement direction H may be one, two rows as in the illustrated example, or three or more rows.
Here, in the case of having a plurality of crucible rows, each crucible row, when viewed from the conveyance direction M of the substrate 70, is a film-forming material vapor discharge port (the slit-like shape) of the other crucible rows. It is preferable to arrange so that the gaps in the arrangement direction H of the chimneys) are filled with each other, and more preferably in a different row so that the film formation material vapor discharge ports do not overlap with the conveyance direction M. In other words, when viewed from the transfer direction M, it is preferable that the film-forming material vapor discharge ports be staggered in each crucible row. In the illustrated example, in each of the two crucible rows in the arrangement direction H, when viewed from the transport direction M, each of the crucible rows is positioned so that the steam outlets of the other crucible row are positioned at the electrode positions of the other crucible row. A row of crucibles is arranged.
By adopting such a configuration, it is possible to make the evaporation vapor amount of the film forming material in the arrangement direction H uniform, and to form a phosphor layer with higher film thickness distribution uniformity.

Further, in the case where a plurality of crucible rows in the arrangement direction H are provided, it is preferable that the row of crucibles 50 for cesium bromide (activator) having a large evaporation amount be located outside the transport direction M.
With such a configuration, the evaporation amount sensor of cesium bromide having a large evaporation amount can be arranged in an open space outside the row of crucibles with respect to the conveying direction M, that is, the evaporation amount sensor. The degree of freedom of selection and the degree of freedom of design of the manufacturing apparatus 10 can be improved.

  In addition, although illustration is abbreviate | omitted, the heating evaporation part 16 of the manufacturing apparatus 10 arrange | positions the square cylinder-shaped heat insulation board higher than the uppermost part of a crucible which surrounds all the crucibles in four directions of a horizontal direction, and this heat insulation. A shutter (not shown) for shielding the film forming material vapor is disposed so that the upper open surface of the plate can be closed / opened freely.

In the present embodiment, a cleaning roller 60 as schematically shown in FIG. 4 is used in a step of removing dust and dust adhering to the surface of the substrate 70 (surface on which the phosphor layer is formed), that is, a dust removal step. Is used. The cleaning roller 60 has a U-shaped frame 62 including a pair of bent portions 62a and a base portion 62b connected to each bent portion 62a. A rotating shaft 64 is pivotally supported on the bent portion 62 a of the frame 62, and a roller portion 66 is provided on the rotating shaft 64. A handle 68 is provided on the base 62 b of the frame 62.
The roller portion 66 removes dust and dirt on the surface of the substrate 70 by being brought into contact with the surface 70d of the substrate 70 by an operator, and has a predetermined adhesive force.

The roller portion 66 of the cleaning roller 60 is made of, for example, a main component of at least one of butyl rubber, silicon, and urethane rubber.
Moreover, when the roller part 66 of the cleaning roller 60 uses butyl rubber, for example, it is preferable to use an adhesive roller (trade name: Mimosa B) manufactured by Miyagawa Roller Co., Ltd.
Further, in the cleaning roller 60, the hardness (Hs JIS-A) of the roller portion 66 is preferably about 30 °, and the adhesive force defined by JIS Z0237 is preferably about 91 hPa.

As described above, the manufacturing apparatus 10 according to the present embodiment performs vacuum deposition at medium vacuum, and in order to ensure that the evaporated film forming material reaches the substrate 70, heating is performed as compared with normal. It is necessary to shorten the distance between the evaporation unit 16 (evaporation source) and the substrate 70 to, for example, about 100 mm. For this reason, it is difficult to provide a cleaning device between the substrate 70 and the evaporation source. Further, when the cleaning device is provided in the vacuum chamber 12, the device becomes large and the cost increases. In the present embodiment, by using the cleaning roller 60 as the dust removing means, it is possible to remove the surface 70d of the substrate 70 with low cost and reliability.
In the present embodiment, the substrate 70 is held by the substrate holding and transporting mechanism 14, set in the vacuum chamber 12, filled with a film forming material for forming the phosphor layer, and then the door 13 is closed to close the vacuum chamber. Before closing 12, the surface 70 d of the substrate 70 is removed by the cleaning roller 60 while the inside of the vacuum chamber 12 is at atmospheric pressure.

Here, the dust removal by the cleaning roller 60 (roller 66) may be performed all over the phosphor layer forming region of the substrate 70 (in the illustrated example, in the frame of the substrate holder 39 serving as a mask). Preferably, dust is not removed in the vicinity of the end portion of the phosphor layer formation region (without contacting the roller portion 66), and only the central portion of the phosphor layer formation region (hereinafter also referred to as the center portion of the substrate) is used. It is preferable to remove dust.
In particular, as shown in FIG. 5, when the total length of the phosphor layer formation region is a, and the width of the region in the vicinity of the end where dust removal is not performed (the distance from the end to the inside) is “0. It is preferable to perform dust removal by the cleaning roller 70 so as to satisfy “03 ≦ b / a ≦ 0.4”, particularly “0.1 ≦ b / a ≦ 0.2”. In addition, when the formation area of a fluorescent substance layer is a rectangle, the formation area of the fluorescent substance layer 14 and the area | region of the center part of the fluorescent substance layer which removes dust are similar, ie, the value of b / a Are preferably equal on all four sides. However, they are not necessarily equal, and the dust removal region may be determined so that each of the four sides satisfies the above formula.
In the case of a circle, the dust removal area may be determined so that the diameter is the full length a and the above formula is satisfied.

In addition, the substrate 70 is preferably cleaned with plasma prior to dust removal by the cleaning roller 60 to clean the substrate surface and improve hydrophilicity. In addition, when performing dust removal using a blower (gas spraying means), a static eliminator, an ion air generator or the like, which will be described later, it is preferable to perform plasma cleaning prior to dust removal.
The plasma cleaning need not be performed in the vacuum chamber 12, and the substrate 70 may be set in the vacuum chamber 12 after performing plasma cleaning with an external plasma cleaning apparatus. Alternatively, plasma cleaning may be performed in the vacuum chamber 12 if the manufacturing apparatus 10 has a plasma cleaning function.

In general, the higher the hydrophilicity of the surface of the substrate 70, the better the adhesion between the substrate 70 and the phosphor layer can be obtained.
Therefore, in the manufacture of a radiation image conversion panel in which a phosphor layer is formed by vapor deposition, plasma cleaning is performed on the surface of the substrate 70 (surface on which the phosphor layer is formed) to remove organic contaminants on the surface of the substrate 70. Further, it is preferable to form the phosphor layer after the surface is improved to make the surface of the substrate 70 hydrophilic. Prior to plasma cleaning, the surface of the substrate 70 is preferably cleaned with an organic solvent such as acetone as necessary.
The degree of hydrophilicity of the surface of the substrate 70 is not limited, but when 22 μL (microliter) of water is dropped onto the substrate 70, the water droplet diameter on the substrate surface is 7 mm or more, particularly 10 mm or more. It is preferable that it is hydrophilic.

However, if the surface of the substrate 70 is removed by the cleaning roller 60 after imparting hydrophilicity to the surface of the substrate 70 in this way, the adhesive component of the roller portion 66 may be transferred to the substrate 70.
The transfer of the adhesive component has a great adverse effect on the hydrophilicity of the substrate 70 even in a small amount, and the hydrophilicity of the substrate 70 is lowered. As a result, the adhesive force between the substrate 70 and the phosphor layer is adversely affected. I will give it.

If the adhesion between the substrate 70 and the phosphor layer is insufficient, the phosphor layer may be peeled off from the substrate 70, but this peeling mostly occurs from the end of the phosphor layer.
In other words, as long as the adhesive force in the vicinity of the end portion is sufficient, the overall adhesive force between the substrate 70 and the phosphor layer can be sufficient, that is, the phosphor layer can be prevented from peeling off.

Therefore, in the vicinity of the end portion of the phosphor layer formation region of the substrate 70, dust is not removed by the cleaning roller 60 (no roller 66 is brought into contact), and only the central portion of the substrate 70 is removed, so that the vicinity of the end portion is removed. Adhesion between the substrate 70 and the phosphor layer can be improved, and sufficient adhesion between the phosphor layer can be ensured. In particular, when the total length of the phosphor layer forming region is a and the width of the region where dust removal is not performed near the end is b, “0.03 ≦ b / a ≦ 0.4”, and particularly “0. By performing dust removal by the cleaning roller 60 so as to satisfy “1 ≦ b / a ≦ 0.2”, image defects caused by sufficient adhesion of the phosphor layer and hillocks caused by dust or the like adhering to the substrate 70 Thus, a high-quality radiation image conversion panel having excellent phosphor layer adhesion and few image defects due to hillocks can be produced.
Further, image defects caused by hillocks caused by dust or the like attached to the substrate 70 do not become a serious problem as long as they are in the vicinity of the end portion of the radiation image conversion panel. Correction is easy.

In this embodiment, the board | substrate 70 consists of a metal or an alloy, for example, and is a thin plate-shaped member or a sheet | seat member. Moreover, the board | substrate 70 is not specifically limited, For example, aluminum, aluminum alloy, iron, stainless steel, copper, chromium, nickel etc. can be used. In the present embodiment, the substrate 70 is preferably made of aluminum or an aluminum alloy.
Further, as the substrate 70, it is possible to use all the various sheet-like substrates used in the radiation image conversion panel, such as glass, ceramics, carbon, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and polyimide. it can.
The substrate 70 has a protective layer such as SiO ₂ , Al ₂ O ₃ , TiO ₂ , SiN, or a polymer for protecting the base material of the substrate on its surface, or a reflection for reflecting the stimulated emission light. You may have a layer.

Further, in the present embodiment, in order to facilitate the conveyance, as shown in FIG. 6, two female thread portions 72 are formed on one side surface 70 a at a predetermined interval on the substrate 70, Moreover, it is preferable to use what formed the two internal thread parts 72 at predetermined intervals similarly to the side surface 70a also at the other side surface 70b facing the side surface 70a.
In the substrate 70, the pins 76 constituted by the base portion 78a and the male screw portion 78b are screwed into the female screw portions 72, respectively. Further, the pin 76 is formed with a cross-shaped (plus) groove 78c, whereby the pin 76 can be easily screwed into the female thread portion 72 by a plus driver.

Further, on the substrate 70, a symbol 74 representing identification information such as a lot number is formed on the end surface 70c different from the side surface 70a and the side surface 70b by, for example, engraving. Thereby, the board | substrate 70 can be specified and it can manage in a manufacturing process.
The symbol 74 recorded on the end face 70c is, for example, a combination of numbers and letters. The symbol 74 may be formed by a processing method such as sandblasting.

Further, in the present embodiment, the pins 76 provided on the substrate 70 are used for transporting the substrate 70 by a transporter (not shown). The substrate 70 is transported by the transporter with the pins 76 attached thereto in the processes after the phosphor layer forming process.
In the present embodiment, the substrate 70 has a size of about 450 mm × 450 mm × 10 mm, for example, and in the case of an aluminum alloy, its mass is about 6 kg.
For this reason, in the manufacturing process of a radiation image conversion panel, when an operator carries the board | substrate 70, while a labor burden is large, when the board | substrate 70 receives external force, there exists a possibility that defects, such as a crack, may arise in a fluorescent substance layer. Therefore, it is preferable to use a transporter for transporting the substrate 70.

The transfer machine includes, for example, a pair of arm units 80 that sandwich and hold the substrate 70, a drive control unit (not shown) that drives the arm unit 80, and a moving unit that moves the transfer machine within the factory premises. (Not shown). FIG. 7 shows only the arm unit 80 of the transfer machine.
As shown in FIG. 7, the arm portion 80 has an arm portion 82, and a holding plate 86 is connected to the arm portion 82 via a connection portion 84. A hole 88 through which the pin 76 is inserted is formed in the holding plate 86 at a position aligned with the position where the pin 76 is formed.
The pair of arm units 80 can move in the direction m, and the pair of arm units 80 can adjust the mutual distance by the drive control unit. Thereby, the board | substrate 70 can be clamped and hold | maintained by inserting the pin 76 of the board | substrate 70 in the hole 88 of the holding plate 86 of a pair of arm part 80. FIG.

In the present embodiment, after the phosphor layer 71 is formed on the substrate 70, the substrate 70 is taken out from the vacuum chamber 12 together with the substrate holder 39.
Next, after the substrate 70 is taken out from the substrate holder 39 and placed on the work table, the pin 76 is screwed onto the female screw portion 72 and attached.
Next, the pins 76 of the substrate 70 are inserted into the holes 88 of the holding plate 86 of the pair of arm portions 80 by the transfer device, and the side surfaces 70a and 70b are sandwiched between the pair of arm portions 80, thereby holding the substrate 70. Hold. And the board | substrate 70 is conveyed by the conveying machine to the heat processing apparatus which implements the heat processing performed.

In the manufacturing apparatus 10 of the present embodiment, when the phosphor layer 71 is formed, the generation of abnormal nucleus crystals is suppressed, and the generation of hillocks and the like can be suppressed. Therefore, it is possible to obtain the phosphor layer 71 having high uniformity of film thickness distribution and excellent crystallinity of the photostimulable light emission characteristics and image sharpness. Finally, it is possible to manufacture the radiation image conversion panel 90 that can obtain a high-quality image with few point defects.
Further, as described above, the vicinity of the end of the phosphor layer forming region is not dust-removed by the cleaning roller, and dust is removed only at the center, thereby preventing the occurrence of hillocks and providing a good phosphor layer. The adhesion between the substrate 70 and the substrate 70 can be obtained.

Next, the manufacturing method of the radiation image conversion panel of the 1st Embodiment of this invention using the manufacturing apparatus 10 is demonstrated.
In the manufacturing method of the radiation image conversion panel of the first embodiment, the substrate 70 as shown in FIG. 8, the phosphor layer 71 formed on the substrate 70, and the phosphor layer 71 are formed. A method for manufacturing the radiation image conversion panel 90 having the moisture-proof protective layer 79 that seals the phosphor layer 71 will be described.

The substrate 70 (see FIG. 1A) is set in advance on the substrate holder 39 (see FIG. 1A).
Next, the substrate 70 and the substrate holder 39 are set in a plasma cleaning apparatus (not shown), and the surface 70d of the substrate 70 (the surface on which the phosphor layer 71 (see FIG. 8) is formed) is plasma cleaned. If necessary, the substrate 70 may be cleaned with an organic solvent such as acetone prior to plasma cleaning.
Next, the door 13 (see FIG. 1A) of the vacuum chamber 12 (see FIG. 1A) is opened, and the vacuum chamber 12 is opened to the atmosphere.
Next, the substrate 70 is held together with the substrate holder 39 on the holding member 38b (see FIG. 2B) of the holding means 26 (see FIG. 2B) of the substrate holding and transporting mechanism 14.

Next, after filling all the crucibles 50 (see FIG. 1 (a)) with cesium bromide and all the crucibles 52 (see FIG. 1 (a)) with europium bromide to a predetermined amount, that is, film-forming materials. Is set in the vacuum chamber 12, and a shutter (not shown) is closed.
Next, in a state where the vacuum chamber 12 is open to the atmosphere, the roller portion 66 (see FIG. 4) of the cleaning roller 60 (see FIG. 4) is brought into contact with the surface 70d (see FIG. 1A) of the substrate 70. The dust and dust on the surface 70d of 70 are removed and removed. Then, the door 13 of the vacuum chamber 12 is closed to close the vacuum chamber 12.
Preferably, the roller portion 66 is not brought into contact with the vicinity of the end portion of the phosphor layer formation region (within the frame of the substrate holder 39), and only the central portion of the substrate 70 is dedusted.

Next, the vacuum pump 18 (see FIG. 1A) is driven to exhaust the interior of the vacuum chamber 12, and when the interior of the vacuum chamber 12 reaches, for example, 8 × 10 ⁻⁴ Pa, the exhaust is continued. For example, Ar gas is introduced into the vacuum chamber 12 through the opening 19a (see FIG. 1B) by the gas introduction nozzle 19 (see FIG. 1B), and the pressure in the vacuum chamber 12 is changed. For example, the pressure is adjusted to 1.0 Pa, and a resistance heating power source is driven to energize all the crucibles 50 and crucibles 52 to heat the film forming material.
Thereafter, when a predetermined time (for example, 60 minutes) set in advance has elapsed, the shutter is opened, and then the motor 34 is driven to start linear conveyance of the substrate 70 at a predetermined speed to the surface 70d of the substrate 70. The formation of the phosphor layer 71 (see FIG. 8) is started.

When the reciprocating motion of the predetermined number of times of linear conveyance set according to the film thickness of the phosphor layer 71 to be formed is finished, the linear conveyance of the substrate 70 is stopped, the shutter is closed, the power source for resistance heating is turned off, The introduction of Ar gas by the gas introduction nozzle 19 is stopped.
Next, nitrogen gas or dry air is introduced into the vacuum chamber 12 to bring the inside of the vacuum chamber 12 to atmospheric pressure. In other words, the atmosphere is open.

Next, the door 13 of the vacuum chamber 12 is opened, and the substrate 70 on which the phosphor layer 71 is formed is taken out together with the substrate holder 39 and carried to the work table.
Next, the substrate 70 is removed from the substrate holder 39, and the pins 76 (see FIG. 6) are screwed and attached to the female thread portions 72 (see FIG. 6) of the substrate 70, respectively. Thereby, the board | substrate 70 can be conveyed using a conveying machine.
Next, the pins 76 of the substrate 70 are inserted into the holes 88 (see FIG. 7) of the holding plate 86 (see FIG. 7) of the pair of arm portions 80 (see FIG. 7) by the transporter, and the side surfaces 70a and 70b. (See FIG. 7) and the substrate 70 is held.
Next, the substrate 70 is transferred by a transfer machine to a heat treatment apparatus (not shown) that performs heat treatment in the next step.
Next, heat treatment (annealing) is performed by a heat treatment apparatus in order to allow the phosphor layer 71 to exhibit the photostimulable light emission characteristics and improve the photostimulated light emission characteristics while the pins 76 are attached. .

Next, after the heat treatment is completed, the substrate 70 is transported to a moisture-proof protective layer forming apparatus (not shown) for forming a moisture-proof protective layer 79 (see FIG. 8) in the next process by a transporter.
Next, an adhesive is applied onto the phosphor layer 71 using, for example, a dispenser.
Next, for example, a moisture-proof protective film (not shown) wound in a roll shape is pulled out, and a moisture-proof protective film is attached on the phosphor layer 71 by a thermal lamination method, and the outer edge is closely attached to the substrate to prevent moisture. A protective layer 79 (see FIG. 8) is formed. In this way, the radiation image conversion panel 90 shown in FIG. 8 can be manufactured.
The moisture-proof protective layer 79 can also be formed using a protective film to which an adhesive has been applied in advance.

As the moisture-proof protective film constituting the moisture-proof protective layer 79, for example, PET (polyethylene terephthalate) on the film, three layers of the hybrid layer and the SiO ₂ film and the SiO ₂ film and the SiO ₂ and PVA (polyvinyl alcohol) The moisture-proof protective layer 79 formed by forming is illustrated. In addition to this, a glass plate (film), a resin film such as polyethylene terephthalate or polycarbonate, a film in which an inorganic substance such as SiO ₂ , Al ₂ O ₃ , or SiC is deposited on the resin film are preferably exemplified. Incidentally, on the PET film, the SiO ₂ film / SiO ₂ and the moisture-proof protective layer 79 formed with three layers of hybrid layer / SiO ₂ film of PVA, for example, SiO ₂ film, by a sputtering method, SiO ₂ The PVA and PVA hybrid films may be formed using a sol-gel method so that the ratio of PVA to SiO ₂ is 1: 1. The moisture-proof protective layer 79 preferably has a moisture permeability of 0.2 to 0.6 (g / (m ² · day)) in an environment where the relative humidity is 90% at a temperature of 40 ° C.

In the manufacturing method of the radiation image conversion panel of the present embodiment, the substrate 70 is set in the vacuum chamber 12 and all the crucibles 50 are filled with cesium bromide and all the crucibles 52 are filled with europium bromide to a predetermined amount. By removing dust from the surface 70d of the substrate 70 in a state where the vacuum chamber 12 is at atmospheric pressure, dust, dust, etc. are set by setting the substrate 70 and filling film forming materials such as cesium bromide and europium bromide. Even if this dust and dust adhere to the surface of the substrate 70 where the phosphor layer 71 is formed, it can be removed. As a result, the phosphor layer 71 is formed on the surface 70d of the substrate 70 in a state in which there are very few dusts and dusts as starting points for abnormal nucleus growth. For this reason, when the phosphor layer 71 is formed, the generation of abnormal nucleus crystals is suppressed, and the generation of hillocks and the like is suppressed. Therefore, it is possible to obtain the phosphor layer 71 having high uniformity of film thickness distribution and excellent crystallinity of the photostimulable light emission characteristics and image sharpness. Finally, it is possible to manufacture the radiation image conversion panel 90 that can obtain a high-quality image with few point defects.
Preferably, the radiation image conversion panel 90 with good adhesion between the substrate 70 and the phosphor layer 71 is not subjected to dust removal by the cleaning roller 60 in the vicinity of the end of the phosphor layer formation region of the substrate 70. Can be manufactured.

  Further, in the manufacturing method of the radiation image conversion panel of the present embodiment, the substrate 70 is set and all the crucibles 50 are filled with cesium bromide and all the crucibles 52 are filled with europium bromide to a predetermined amount (film formation). It is preferred that the substrate 70 be dedusted after filling the material. In particular, it is more preferable to remove the dust from the substrate 70 immediately after the phosphor layer 71 is formed with the door 13 of the vacuum chamber 12 closed and the vacuum chamber 12 closed after the film forming material is filled. . Accordingly, for example, even if dust, dust, or the like adheres to the surface 70d of the substrate 70 with the vacuum chamber 12 closed, it can be removed. That is, dust can be removed immediately before the phosphor layer 71 is formed. Therefore, finally, the radiation image conversion panel 90 that can obtain a high-quality image with fewer point defects can be manufactured.

Next, a second embodiment of the present invention will be described.
Fig.9 (a) is typical sectional drawing which shows 2nd Embodiment of the radiographic image conversion panel manufacturing apparatus used for the manufacturing method of the radiographic image conversion panel of this invention, (b) is FIG.9 (a). It is a typical sectional side view of the radiation image conversion panel manufacturing apparatus shown in FIG.
In the present embodiment, the radiation image conversion panel manufacturing apparatus 10 shown in FIGS. 1A and 1B to 3, the substrate 70 of the radiation image conversion panel shown in FIGS. 6 and 7, and the radiation image shown in FIG. 8. The same components as those of the conversion panel 90 are denoted by the same reference numerals and detailed description thereof is omitted.

  As shown in FIG. 9A, the radiation image conversion panel manufacturing apparatus 10a (hereinafter also referred to as the manufacturing apparatus 10a) of the present embodiment is a radiation image conversion panel manufacturing apparatus 10 of the first embodiment (FIG. 1). Compared to (a) and (b)), the dust removal unit 92 and various sensors (not shown) are provided, and the other configurations are the radiation image conversion of the first embodiment. Since it is the same structure as the panel manufacturing apparatus 10, the detailed description is abbreviate | omitted.

  The dust removing unit 92 of the present embodiment removes the surface 70 d (the surface on which the phosphor layer 71 is formed) of the substrate 70 and is provided on the installation side of the vacuum pump 18 in the vacuum chamber 12. The dust removing portion 92 has a roller portion 94. The roller portion 94 can be raised and lowered with respect to the vertical direction, and can be brought into contact with and separated from the surface 70 d of the substrate 70. The roller portion 94 includes a support portion 94a and a roller 94b that is rotatably supported by the support portion 94a. The roller 94b has the same configuration as the roller portion 66 (see FIG. 4) of the cleaning roller 60 (see FIG. 4).

In the manufacturing apparatus 10a of the present embodiment, the roller 94b of the dust removing unit 92 protrudes upward and the substrate 70 is moved to the installation side of the vacuum pump 18, so that the roller 94b contacts the surface 70d of the substrate 70. Then, the surface 70d of the substrate 70 (formation surface of the phosphor layer 71) is removed. The raising / lowering of the roller portion 94 of the dust removing portion 92 is controlled by the control portion 20. That is, dust removal is controlled by the control unit 20.
Note that dust removal at this time also does not contact the roller 94d in the vicinity of the end of the phosphor layer formation region (within the frame of the substrate holder 39) (that is, no dust removal is performed), and only the central portion of the substrate 70 is the roller 94d. It is preferable to remove the dust with the same as in the previous example.

Further, in the manufacturing apparatus 10a of the present embodiment, for example, a first sensor (not shown) for detecting that the substrate holder 39 is installed on the substrate holding means 26 is provided.
The first sensor is connected to the control unit 20, and when the substrate holder 39 is held by the substrate holding unit 26, a detection signal is output to the control unit 20. For example, a proximity sensor can be used as the first sensor.

  In the manufacturing apparatus 10a of this embodiment, after a detection signal indicating that the substrate holder 39 is held by the substrate holding means 26 is output to the control unit 20, the control unit 20 moves the roller unit 94 from the dust removal unit 92. The substrate 70 is protruded upward, and the substrate 70 is moved to the vacuum pump 18 side to remove dust. Thus, by providing the first sensor, it is possible to reliably remove dust after setting the substrate 70.

Further, in the manufacturing apparatus 10a of this embodiment, instead of the first sensor or in addition to the first sensor, film forming materials (cesium bromide, europium bromide) in the crucibles (containers) 50 and 52. ) May be provided as a second sensor (not shown) for detecting that it is stored (filled).
This second sensor is connected to the control unit 20, and when a film forming material (cesium bromide, europium bromide) is stored (filled) in the crucibles (containers) 50, 52, a detection signal is generated. It is output to the control unit 20. As this 2nd sensor, the strain gauge provided in the bottom part of the crucible (container) 50, 52 through heat-resistant bodies, such as ceramics, can be used, for example.

  In the manufacturing apparatus 10a of the present embodiment, after the detection signal indicating that the film forming material is stored (filled) in the crucibles (containers) 50 and 52 is output to the control unit 20, the control unit 20 removes the dust. The roller portion 94 is protruded upward from the portion 92, and further, the substrate 70 is moved to the vacuum pump 18 side to remove dust. As described above, by providing the second sensor, dust or dust generated when the film forming material is stored (filled) in the crucibles (containers) 50 and 52 can be reliably removed.

  In the manufacturing apparatus 10a of the present embodiment, a vacuum gauge provided in the vacuum chamber 12 may be used instead of the first sensor or in addition to the first sensor. In this case, the pressure measured by the vacuum gauge is output to the control unit 20 as a pressure signal. When the pressure in the vacuum chamber 12 becomes equal to or lower than a predetermined pressure, the control unit 20 causes the roller unit 94 to protrude upward from the dust removal unit 92 and further moves the substrate 70 toward the vacuum pump 18 to remove dust. In this way, dust is removed based on the pressure in the vacuum chamber 12, so that dust remaining in the vacuum chamber 12 is not affected and dust can be removed more reliably.

Further, in the manufacturing apparatus 10a of the present embodiment, a third sensor (not shown) for detecting the opening / closing of the door 13 of the vacuum chamber 12 is provided instead of or in addition to the first sensor. It may be provided.
The third sensor is connected to the control unit 20, and when the door 13 is closed, a detection signal is output to the control unit 20. For example, a proximity sensor can be used as the third sensor.

  In the manufacturing apparatus 10a of this embodiment, after the detection signal indicating that the door 13 of the vacuum chamber 12 is closed is output to the control unit 20, the control unit 20 moves the roller unit 94 upward from the dust removal unit 92. Further, the substrate 70 is moved to the vacuum pump 18 side to remove dust. As described above, by providing the third sensor, dust is removed after the door 13 of the vacuum chamber 12 is closed, that is, in a state where the vacuum chamber 12 is closed, so that the entry of dust from the outside of the vacuum chamber 12 is suppressed. With this, dust can be removed more reliably.

Further, in the manufacturing apparatus 10a of the present embodiment, a fourth sensor (not shown) that detects opening and closing of the shutter provided in the heating evaporation unit 16 instead of or in addition to the first sensor. May be provided.
The third sensor is connected to the control unit 20, and a detection signal is output to the control unit 20 when the shutter is open. As this fourth sensor, for example, a photo interrupter or a proximity sensor can be used.

  In the manufacturing apparatus 10a of the present embodiment, after a detection signal indicating that the shutter of the heating evaporation unit 16 is closed is output to the control unit 20, the control unit 20 moves the roller unit 94 upward from the dust removal unit 92. Further, the substrate 70 is moved to the vacuum pump 18 side to remove dust. In this way, by providing the fourth sensor, dust removal can be performed immediately before the start of vapor deposition, while the degree of vacuum in the vacuum chamber 12 is high and the dust in the vacuum chamber 12 is extremely small. Compared to the third sensor to the third sensor, extremely effective dust removal can be performed.

  As described above, also in the manufacturing apparatus 10a of this embodiment, the surface 70d of the substrate 70 can be removed, so that the film thickness distribution uniformity is high and good as in the manufacturing apparatus 10 of the first embodiment. It is possible to obtain a phosphor layer 71 having excellent crystallinity and excellent light emission characteristics and image sharpness, and finally to produce a radiation image conversion panel 90 that can obtain a high-quality image with few point defects. it can.

In addition, in the manufacturing apparatus 10a of this embodiment, the timing which performs dust removal can be set by using the detection signal of a 1st sensor-a 4th sensor, or the output signal of a vacuum gauge. Moreover, in the control part 20, after the detection signal of a 1st sensor-a 4th sensor or the output signal of a vacuum gauge is input, the start time of dust removal is not specifically limited, A detection signal or an output It may be immediately after the signal is input or after a predetermined time has elapsed.
In the manufacturing apparatus 10a of the present embodiment, the dust removing unit 92 is provided in the vacuum chamber 12 as compared with the one using the cleaning roller 60 (see FIG. 4) as in the first embodiment. . For this reason, as described above, the detection signal of the first sensor to the fourth sensor or the output signal of the vacuum gauge is used to set the substrate 70, fill the film forming material, and then close the door 13. Or after the inside of the vacuum chamber 12 is evacuated, the control unit 20 automatically moves the substrate 70 to a position facing the dust removing unit 92 to remove dust attached to the surface 70d of the substrate 70, The dust can be removed by the roller portion 94 of the dust removing portion 92. Thereby, before forming the phosphor layer 71 on the surface 70d of the substrate 70, the surface 70d of the substrate 70 can be more effectively dedusted. Therefore, abnormal nucleus growth in the phosphor layer 71 can be further suppressed, and finally, the radiation image conversion panel 90 from which a high-quality image with fewer point defects can be obtained can be manufactured. Moreover, also in the aspect having the second to fourth sensors, etc., by having the first sensor, it is possible to prevent the trouble of operating the dust removing unit 92 without mounting the substrate 70.
Further, in the dust removal in these embodiments, the roller 94d is not brought into contact (that is, dust removal is not performed) in the vicinity of the end of the phosphor layer formation region of the substrate 70, and only the central portion of the substrate 70 is removed by the roller 94d. By doing so, a high-quality radiation image conversion panel having high adhesion between the phosphor layer 71 and the substrate 70 can be manufactured.

Next, the manufacturing method of the radiation image conversion panel of the 2nd Embodiment of this invention is demonstrated.
In the present embodiment, the manufacturing method will be described by taking the radiation image conversion panel 90 shown in FIG.
In the manufacturing method of the radiation image conversion panel according to the present embodiment, the dust removing process for removing dust from the substrate 70 uses the cleaning roller 60 (see FIG. 4) as compared with the manufacturing method of the radiation image conversion panel according to the first embodiment. The dust removal unit 92 is not used, and the timing of dust removal by the dust removal unit 92 is different depending on the configuration of the manufacturing apparatus 10a such as the first sensor to the fourth sensor or the vacuum gauge, and other processes. Since this is the same as the manufacturing method of the first radiation image conversion panel, its detailed description is omitted. Preferably, the roller portion 66 is not brought into contact with the vicinity of the end of the phosphor layer formation region (within the frame of the substrate holder 39 serving as a mask), and only the central region of the substrate 70 is removed. .
In the manufacturing method of the radiation image conversion panel of this embodiment, it is needless to say that dust removal can be performed automatically and the same effects as those of the first embodiment can be obtained.

  Also in the manufacturing method of the present embodiment, the phosphor layer 71 (see FIG. 8) is formed on the substrate 70 (see FIG. 8) in a state where dust and dust that are the starting points of abnormal nucleus growth are extremely small. As a result, generation of hillocks or the like is suppressed, columnar crystals are densely grown in a direction perpendicular to the surface 70d of the substrate 70, the film thickness distribution uniformity is high, and excellent crystallinity of the photostimulable light emission characteristics and image sharpness. A phosphor layer 71 having excellent properties can be obtained. Therefore, finally, as in the first embodiment, the radiation image conversion panel 90 (see FIG. 8) that can obtain a high-quality image with few point defects can be manufactured.

  Further, in the manufacturing method of the present embodiment, the dust removing portion 92 is provided in the vacuum chamber 12. For this reason, after the substrate 70 is set, the film forming material is filled, the door 13 is closed, or the inside of the vacuum chamber 12 is evacuated, the control unit 20 automatically removes the substrate 70 from the dust. The dust and dust adhering to the surface 70 d of the substrate 70 can be removed by the roller portion 94 of the dust removing portion 92 by moving to a position facing the 92. Thereby, before forming the phosphor layer 71 on the surface 70d of the substrate 70, the surface 70d of the substrate 70 can be more effectively dedusted. Therefore, abnormal nucleus growth in the phosphor layer 71 can be further suppressed, and finally, the radiation image conversion panel 90 (see FIG. 7) from which a high-quality image with fewer point defects can be obtained can be manufactured. .

Next, a third embodiment of the present invention will be described.
FIG. 10A is a schematic cross-sectional view showing a third embodiment of a radiation image conversion panel manufacturing apparatus used in the method for manufacturing a radiation image conversion panel of the present invention, and FIG. It is a typical sectional side view of the radiation image conversion panel manufacturing apparatus shown in FIG.
In the present embodiment, the same components as those in the radiation image conversion panel manufacturing apparatus 10a of the second embodiment shown in FIGS. 9A and 9B are denoted by the same reference numerals, and detailed description thereof is omitted. .

  As shown in FIG. 10 (a), the radiation image conversion panel manufacturing apparatus 10b (hereinafter also referred to as the manufacturing apparatus 10b) of the present embodiment is a radiation image conversion panel manufacturing apparatus 10a (FIG. 9) of the second embodiment. Compared to (a) and (b)), the configuration of the dust removing portion 96 is different, and the other configurations are the same as the configuration of the radiation image conversion panel manufacturing apparatus 10a of the second embodiment. Detailed description thereof is omitted. Needless to say, the manufacturing apparatus 10b is also provided with any one of the first sensor to the fourth sensor and a vacuum gauge.

The dust removing unit 96 according to the present embodiment removes the surface 70 d (formation surface of the phosphor layer 71) of the substrate 70 and is provided on the installation side of the vacuum pump 18 in the vacuum chamber 12. The dust removing unit 96 is, for example, a blower (gas blowing means) that blows the gas F onto the surface 70 d (the formation surface of the phosphor layer 71) of the substrate 70.
In the manufacturing apparatus 10b of the present embodiment, the substrate 70 is moved to a position facing the dust removing unit 96, and the dust F 96 blows the gas F onto the surface 70d (formation surface of the phosphor layer 71) of the substrate 70. Remove dust and dirt. That is, the surface 70d of the substrate 70 is removed.

Further, in the manufacturing apparatus 10b of the present embodiment, the dust removing unit 96 may include a charge removing device that removes dust and dirt from the surface 70d of the substrate 70 by discharging the substrate 70.
In addition, in the manufacturing apparatus 10b of this embodiment, the dust removal part 96 can use a clean air barrier static elimination apparatus (SJ-V series (made by Keyence Corporation)) as a static elimination apparatus, for example.

Further, the dust removing unit 96 may be a combination of a blower (gas spraying means) and a static eliminator or an ion air generator. In this case, dust is removed from the surface 70d of the substrate 70 by blowing the gas F with a blower and further using ion air.
Furthermore, the dust removal unit 96 may be a combination of an ion air generator and a static eliminator.

  As described above, also in the manufacturing apparatus 10b of the present embodiment, similar to the manufacturing apparatus 10a of the second embodiment, the film thickness distribution uniformity is high, and the excellent photostimulable light emission characteristics and image sharpness are high. An excellent phosphor layer 71 can be obtained, and finally, the radiation image conversion panel 90 can be manufactured from which a high-quality image with few point defects can be obtained.

  In addition, in the manufacturing apparatus 10b of this embodiment, as in the manufacturing apparatus 10a of the second embodiment, any one of the first sensor to the fourth sensor and a vacuum gauge are provided, and the dust removing unit 96 is provided. Is also provided in the vacuum chamber 12. For this reason, after the substrate 70 is set, after the film forming material is filled, or after the door 13 is closed, the control unit 20 automatically moves the substrate 70 to a position facing the dust removing unit 96, and the substrate 70. Dust and dust adhering to the surface 70d can be removed by the dust removing unit 96. This makes it possible to more effectively remove the surface 70d of the substrate 70 immediately before the vacuum chamber 12 is evacuated. Therefore, abnormal nucleus growth in the phosphor layer 71 can be further suppressed, and finally, the radiation image conversion panel 90 from which a high-quality image with fewer point defects can be obtained can be manufactured.

Next, the manufacturing method of the radiation image conversion panel of the 3rd Embodiment of this invention is demonstrated.
In the present embodiment, the manufacturing method will be described by taking the radiation image conversion panel 90 shown in FIG.
The manufacturing method of the radiation image conversion panel of the present embodiment is similar to the manufacturing method of the radiation image conversion panel of the second embodiment, as compared with the manufacturing method of the radiation image conversion panel of the first embodiment. 96 is used, and the timing of dust removal by the dust removal unit 96 is different depending on the configuration of the manufacturing apparatus 10b such as the first sensor to the fourth sensor or the vacuum gauge, and the other steps are the first radiation. Since it is the same as the manufacturing method of an image conversion panel, the detailed description is abbreviate | omitted.
Also in the manufacturing method of the radiation image conversion panel of this embodiment, dust can be automatically removed by the control unit 20 by using the detection signals of the first sensor to the fourth sensor or the output signal of the vacuum gauge. Needless to say, the same effects as those of the first embodiment can be obtained.

  Also in the manufacturing method of the present embodiment, the phosphor layer 71 (see FIG. 8) is formed on the substrate 70 (see FIG. 8) in a state where dust and dust that are the starting points of abnormal nucleus growth are extremely small. As a result, generation of hillocks or the like is suppressed, columnar crystals are densely grown in a direction perpendicular to the surface 70d of the substrate 70, the film thickness distribution uniformity is high, and excellent crystallinity of the photostimulable light emission characteristics and image sharpness. A phosphor layer 71 having excellent properties can be obtained. Therefore, finally, as in the first embodiment, the radiation image conversion panel 90 (see FIG. 8) that can obtain a high-quality image with few point defects can be manufactured.

  Further, in the manufacturing method of the present embodiment, the dust removing unit 96 is provided in the vacuum chamber 12. For this reason, after the substrate 70 is set and filled with the film forming material, the substrate 70 is moved to a position facing the dust removing portion 96 with the door 13 closed and the vacuum chamber 12 closed, and the surface of the substrate 70 is moved. Dust and dust adhering to 70 d can be removed by the dust removing unit 96. This makes it possible to more effectively remove the surface 70d of the substrate 70 immediately before the vacuum chamber 12 is evacuated. Therefore, the abnormal nucleus growth in the phosphor layer 71 can be further suppressed, and finally, the radiation image conversion panel 90 (see FIG. 8) from which a high-quality image with fewer point defects can be obtained can be manufactured. .

  In any of the above-described embodiments, the radiation image conversion panel manufacturing apparatus that forms the phosphor layer by linearly transporting the substrate in the transport direction has been described as an example, but the present invention is not limited thereto, There are no particular limitations on the method of transporting the substrate, such as a method of forming the phosphor layer while holding the substrate, or a method of forming the phosphor layer while rotating the substrate.

  As mentioned above, although the manufacturing method and the radiation image conversion panel manufacturing apparatus of the radiation image conversion panel of this invention were demonstrated in detail, this invention is not limited to the said embodiment, In the range which does not deviate from the summary of this invention, it is various. Of course, improvements and changes may be made.

Hereinafter, the present invention will be described in more detail with reference to specific examples of the present invention. Needless to say, the present invention is not limited to the following examples.
[Example 1, Example 2, and Comparative Example 1]
In this example, a radiation image conversion panel was manufactured by the method for manufacturing a radiation image conversion panel of the first embodiment. The radiation image conversion panel produced by the manufacturing method of the first embodiment was taken as Example 1.
Moreover, the radiation image conversion panel was produced with the manufacturing method of the radiation image conversion panel of 2nd Embodiment. The radiation image conversion panel produced by the manufacturing method of the second embodiment was taken as Example 2.
Furthermore, a radiation image conversion panel was produced by the same manufacturing method as the manufacturing method of the radiation image conversion panel of the first embodiment except that the dust removal step of the substrate was omitted, and this radiation image conversion panel was used as Comparative Example 1.
In this example, the point defects of the obtained images were examined for the radiation image conversion panels of Example 1, Example 2, and Comparative Example 1, respectively.

  In the configuration of the radiation image conversion panels of Example 1, Example 2, and Comparative Example 1, as shown in FIG. 8, a phosphor layer 71 is provided on a substrate 70, and the moisture-proof seals the phosphor layer 71. The protective layer 79 was provided.

  Further, an aluminum alloy substrate (YH75 (manufactured by White Copper Co., Ltd.)) was used as the substrate. The size of the substrate was 450 mm × 450 mm × 10 mm.

  Next, the manufacturing method of the radiation image conversion panel of Example 1, Example 2, and Comparative Example 1 is demonstrated.

First, the substrate 70 was set on the substrate holder 39.
Next, with the substrate holder 39 set, the substrate 70 together with the substrate holder 39 was set in the plasma cleaning apparatus. Then, the plasma cleaning apparatus was used to clean the surface of the substrate 70 by generating Ar plasma in an Ar gas atmosphere with a pressure of 1 Pa under the conditions of power of 500 W and time of 60 seconds.
Next, after cleaning, the substrate 70 together with the substrate holder 39 was set on the substrate holding means 26 of the substrate holding and transporting mechanism 14 in the vacuum chamber 12.

Next, the CsBr evaporation source (film forming material) and the EuBr ₂ evaporation source (film forming material) were filled in the resistance heating crucibles (containers) 50 and 52 of the heating evaporation unit 16 in the vacuum chamber 12.
Here, in this example, a cesium bromide (CsBr) powder having a purity of 4N or more and a melted product of europium bromide (EuBr ₂ ) having a purity of 3N or more were prepared as an evaporation source (film forming material). . The EuBr ₂ melt was prepared by putting powder in a platinum crucible in a tube furnace having a sufficient halogen atmosphere to prevent oxidation, heating to 800 ° C. to melt, cooling, and taking out from the furnace. As a result of analyzing trace elements in each raw material by ICP-MS method (inductively coupled high-frequency plasma spectroscopy-mass spectrometry), alkali metals (Li, Na, K, Rb) other than Cs in CsBr are each 10 ppm by mass. The other elements such as alkaline earth metals (Mg, Ca, Sr, Ba) were 2 mass ppm or less. Moreover, rare earth elements other than Eu in EuBr ₂ were each 20 ppm by mass or less, and other elements were 10 ppm by mass or less. Since these raw materials have high hygroscopicity, they are stored in a desiccator that maintains a dry atmosphere with a dew point of −20 ° C. or less, and are taken out immediately before use.
In the radiation image conversion panels of Example 1, Example 2, and Comparative Example 1, the distance between the substrate 70 and the heating evaporation unit 16 was 100 mm, and the phosphor layer 71 was formed while the substrate 70 was conveyed linearly. .

Next, the roller portion 66 (see FIG. 4) of the cleaning roller 60 (see FIG. 4) is brought into contact with the surface 70d of the substrate 70 (formation surface of the phosphor layer 71) (that is, not masked by the substrate holder 39). The dust and dust adhering to the surface 70d of the substrate 70 were removed and removed (ie, “b / a = 0/400 = 0”).
In order to investigate the hydrophilicity of the substrate 70 after dust removal, the same substrate 70 is housed in the same substrate holder 39, plasma cleaning is performed in the same manner, dust removal is similarly performed with the cleaning roller 60, and then 22 μL. Water was dropped on the substrate and the water droplet diameter was measured. As a result, the water droplet diameter was 5 mm for both the center of the substrate and the end of the phosphor layer forming region (hereinafter simply referred to as the end).

Next, the door 13 was closed and the vacuum chamber 12 was closed.
Next, the main exhaust valve was opened to evacuate the vacuum chamber 12 to a vacuum degree of 8 × 10 ⁻⁴ Pa.
At this time, a combination of a rotary pump, a mechanical booster, and a diffusion pump was used as the vacuum pump. Furthermore, a cryopump for exhausting moisture was used to remove moisture.

Thereafter, the exhaust was switched to the main exhaust valve and exhausted to a vacuum level of 8 × 10 ⁻⁴ Pa. Then, the exhaust was switched to bypass again, and a predetermined amount of Ar gas was introduced to obtain a vacuum level of 1.0 Pa.

With the shutter provided between the substrate 70 and the heating evaporator 16 (the crucible 50 and the crucible 52) closed, each evaporation source (CsBr and EuBr ₂ ) is heated and melted with a resistance heating device, and heating is started. After the lapse of 60 minutes, only the shutter on the crucible 50 side was opened, and linear conveyance of the substrate 70 was started, and a CsBr phosphor matrix was deposited on the surface of the substrate 70.
Next, after a predetermined time has passed since the shutter on the crucible 50 side was opened, the shutter on the crucible 52 side was also opened, and a CsBr: Eu stimulable phosphor was deposited on the CsBr phosphor matrix.

The deposition rate was 6 μm / min. Further, the resistance current of each resistance heating device of the heating evaporation unit 16 was adjusted to control the molar concentration ratio of Eu / Cs in the stimulable phosphor layer to be 0.003 / 1.
After the vapor deposition, the resistance heating device was turned off and the introduction of Ar gas was stopped.
Next, nitrogen gas or dry air was introduced into the vacuum chamber 12 to bring the inside of the vacuum chamber 12 to atmospheric pressure. Then, the door 13 was opened, and the substrate 70 was taken out from the vacuum chamber 12 together with the substrate holder 39.

  As a result, a phosphor layer 71 having a densely forested structure in which the columnar crystals of the phosphor extend in a substantially vertical direction is formed on the surface 70d of the substrate 70. The thickness of the phosphor layer 71 was 700 μm, and the area where the phosphor layer 71 was formed was 400 mm × 400 mm.

Next, the substrate 70 on which the phosphor layer 71 was formed was heat-treated at a temperature of 200 ° C. for 2 hours in order to increase sensitivity.
In the heat treatment step, first, the substrate 70 on which the phosphor layer 71 was formed was placed in a vacuum heating apparatus capable of introducing gas.
Next, the inside of the vacuum heating apparatus was depressurized to about 1 Pa by a rotary pump, and moisture adsorbed on the substrate 70 on which the phosphor layer 71 was formed was removed.
Next, the inside of the vacuum heating apparatus was heated, and N ₂ (nitrogen) gas was allowed to flow into the vacuum heating container to create an N ₂ gas flow atmosphere. As described above, the heat treatment was performed under the heat treatment conditions of a temperature of 200 ° C. and a time of 2 hours.
Next, after the heat treatment, the substrate 70 on which the phosphor layer 71 was formed was taken out from the vacuum heating apparatus and cooled in the atmosphere.

Next, an adhesive was applied to the region where the phosphor layer 71 and the phosphor layer 71 on the surface 70d of the substrate 70 were not formed using a dispenser.
Next, for example, a moisture-proof protective film wound in a roll shape is pulled out, and a moisture-proof protective film is attached on the phosphor layer 71 by a thermal lamination method, and the outer edge is brought into close contact with the surface of the substrate. Formed.
Thus, the radiation image conversion panel of Example 1 was produced.

Further, in Example 2, the manufacturing apparatus is different from that in Example 1, and the dust removing unit has a gas blowing means and an ion air generating device. Moreover, in the radiation image conversion panel of Example 2, the dust removal step is different from that of gas blowing by the gas blowing means and the ion air generator and ion air, and otherwise the same as in Example 1. It is manufactured by the manufacturing method. In addition, in order to investigate the hydrophilicity of the substrate 70 after dust removal, after the same substrate 70 is accommodated in the same holder 39, plasma cleaning is performed in the same manner, and after gas blowing and dust removal by ion air are similarly performed. 22 μL of water was dropped onto the substrate, and the water droplet diameter was measured. As a result, the water droplet diameter was 15 mm at both the center and the end of the substrate.
Moreover, the radiation image conversion panel of Comparative Example 1 is the same as the manufacturing method of Example 1, except that the dust removal step is omitted, and the other parts are manufactured by the same manufacturing method as in Example 1. In order to examine the hydrophilicity of the substrate 70, the same substrate 70 was accommodated in the same holder 39, and plasma cleaning was performed in the same manner, and then 22 μL of water was dropped onto the substrate to measure the water droplet diameter. . As a result, the water droplet diameter was 15 mm at both the center and the end of the substrate.

[Example 3]
A region having a width of 20 mm from the end of the phosphor layer formation region of the substrate 70 (a width of 20 mm inside the substrate holder 39) is the same as in Example 1 except that the dust is not removed by the cleaning roller 60. A conversion panel was produced (ie, “b / a = 20/400 = 0.05”).
Further, in order to investigate the hydrophilicity of the substrate 70 after dust removal, the same substrate 70 is accommodated in the same holder 39, plasma cleaning is performed in the same manner, dust removal is similarly performed by the cleaning roller 60, and then 22 μL of water Was dropped on the substrate and the water droplet diameter was measured. As a result, the water droplet diameter was 5 mm at the substrate center (dust removal region) and 15 mm at the end (non-dust removal region).

[Example 4]
A region having a width of 40 mm from the end of the phosphor layer forming region of the substrate 70 (a width of 40 mm inside the substrate holder 39) is the same as in Example 1 except that dust removal by the cleaning roller 60 is not performed. A conversion panel was manufactured (ie, “b / a = 40/400 = 0.1”).
Further, in order to investigate the hydrophilicity of the substrate 70 after dust removal, the same substrate 70 is accommodated in the same holder 39, plasma cleaning is performed in the same manner, dust removal is similarly performed by the cleaning roller 60, and then 22 μL of water Was dropped on the substrate and the water droplet diameter was measured. As a result, the water droplet diameter was 5 mm at the substrate center (dust removal region) and 15 mm at the end (non-dust removal region).

[Example 5]
A region having a width of 80 mm from the end of the phosphor layer formation region of the substrate 70 (a width of 80 mm inside the substrate holder 39) is the same as in Example 1 except that the dust is not removed by the cleaning roller 60. A conversion panel was manufactured (ie, “b / a = 80/400 = 0.2”).
Further, in order to investigate the hydrophilicity of the substrate 70 after dust removal, the same substrate 70 is accommodated in the same holder 39, plasma cleaning is performed in the same manner, dust removal is similarly performed by the cleaning roller 60, and then 22 μL of water Was dropped on the substrate and the water droplet diameter was measured. As a result, the water droplet diameter was 5 mm at the substrate center (dust removal region) and 15 mm at the end (non-dust removal region).

[Example 6]
A region having a width of 120 mm from the end of the phosphor layer forming region of the substrate 70 (width of 120 mm inside the substrate holder 39) is the same as in Example 1 except that dust removal by the cleaning roller 60 is not performed. A conversion panel was manufactured (ie, “b / a = 120/400 = 0.3”).
Further, in order to investigate the hydrophilicity of the substrate 70 after dust removal, the same substrate 70 is accommodated in the same holder 39, plasma cleaning is performed in the same manner, dust removal is similarly performed by the cleaning roller 60, and then 22 μL of water Was dropped on the substrate and the water droplet diameter was measured. As a result, the water droplet diameter was 5 mm at the substrate center (dust removal region) and 15 mm at the end (non-dust removal region).

[Comparative Example 2]
A radiation image conversion panel was manufactured in exactly the same manner as in Example 1 except that the substrate 70 was not subjected to plasma cleaning or dust removal.
In order to investigate the hydrophilicity of the substrate 70, 22 μL of water was dropped onto the substrate while the same substrate 70 was accommodated in the same holder 39, and the water droplet diameter was measured. As a result, the water droplet diameter was 3.5 mm at the center and the end of the substrate.

  Table 1 below collectively shows the dust removal method (presence / absence) and the water droplet diameter for the production methods of Examples 1 to 6 and Comparative Examples 1 and 2.

[Image defect]
In this example, a uniform image was acquired as a radiographic image for the radiographic image conversion panels of the examples and comparative examples produced as described above, and point defects in this radiographic image (uniform image) were examined. .

First, the entire surface of the radiation image conversion panel is irradiated with X-rays having a tube voltage of 80 kV and a dose of 10 mR (2.58 × 10 ⁻⁶ C / kg) using a tungsten tube, followed by line scanner type image reading. Read the light (which is irradiated with a semiconductor laser beam having a wavelength of 660 nm and receives the stimulated emission light emitted from the surface of the radiation image conversion panel with a CCD in which light receiving elements are arranged in a line) The received light was converted into an electrical signal to obtain a uniform image as a radiation image. This radiation image (uniform image) was output as a visible image on a film by a laser printer.

Next, for the radiographic image (uniform image) recorded on the film obtained for the radiographic image conversion panel, a range of 10 cm × 10 cm (10 cm □: 100 cm) of the central portion of the radiographic image (uniform image) using a shaucus ten is used. ^{In 2} ), the white point was regarded as a point defect, and the number of white points was counted visually. In this way, the number of point defects was measured.
Table 1 below shows the number of point defects in each of the radiation image conversion panels of Example 1, Example 2, and Comparative Example 1.
In addition, the point defect was counted on a 10 cm square image as a defect larger than 600 × 600 μm in a large size and a defect smaller than 600 × 600 μm as a small size. In addition, the evaluation is “×” if there is even one large size, “◎” if there is no large size and 15 or less small sizes, and “○” if there is no large size and more than 15 small sizes. I decided.

[Membrane adhesion]
Moreover, in the present Example, the adhesive force of the fluorescent substance layer was investigated about the radiation image conversion panel of each Example and comparative example produced as mentioned above.
The adhesion strength of the phosphor layer was determined by applying an adhesive tape to the surface of the phosphor layer 71, peeling off the adhesive tape, and observing whether or not the phosphor layer 71 was detached from the substrate 70. No) was scored with 6 points. Five levels of adhesive tapes with different adhesive strengths were prepared, and the adhesive strength was evaluated relatively from the peeling status of each tape. The practical level indicates a level at which the radiation image conversion panel is not peeled off by vibration on the vehicle when the radiation image conversion panel is mounted on the vehicle, and the practically possible level is 3 or more.

比較例２は、プラズマ洗浄を行なっていない。また、上記表において、水滴径の単位はｍｍ、画像欠陥（点欠陥）の数は、１０ｃｍ□の個数である。 The test results of point defects and film adhesion are written together in Table 1.

In Comparative Example 2, plasma cleaning is not performed. In the above table, the unit of the water droplet diameter is mm, and the number of image defects (point defects) is 10 cm □.

As shown in Table 1, the number of point defects in Example 1 and Example 2 is 1/3 or less compared to Comparative Example 1 and Comparative Example 2, and the number of point defects is significantly reduced. did.
Further, in Example 1, compared with Example 2, the number of point defects was ½ or less, the number of point defects was smaller, and an even better phosphor layer could be formed.
Further, in Examples 3 to 6 in which the dust was not removed by the cleaning roller in the vicinity of the end portion of the phosphor layer forming region, it was possible to obtain a very excellent phosphor layer adhesion with a good point defect reduction effect. is made of.
Thus, in the manufacturing method of the radiation image conversion panel of this invention, the radiation image conversion panel which can obtain a high quality image with few defects was able to be manufactured.

(A) is typical sectional drawing which shows 1st Embodiment of the radiographic image conversion panel manufacturing apparatus used for the manufacturing method of the radiographic image conversion panel of this invention, (b) is Fig.1 (a). It is a typical sectional side view of the radiation image conversion panel manufacturing apparatus shown. (A) is a typical top view which shows the board | substrate holding | maintenance conveyance means of the radiation image conversion panel manufacturing apparatus shown to Fig.1 (a), (b) is a radiation image conversion panel manufacturing apparatus shown to Fig.1 (a). It is a typical front view which shows the board | substrate holding | maintenance conveyance means of this, (c) is a typical side view which shows the board | substrate holding | maintenance conveyance means of the radiation image conversion panel manufacturing apparatus shown to Fig.1 (a). It is a typical top view which shows the heating evaporation part of the fluorescent substance sheet manufacturing apparatus shown to Fig.1 (a). It is a schematic diagram which shows the cleaning roller used for the manufacturing method of the radiation image conversion panel of the 1st Embodiment of this invention. It is a schematic diagram for demonstrating the dust removal by the cleaning roller in the manufacturing method of the radiation image conversion panel of the 1st Embodiment of this invention. It is a typical perspective view which shows the board | substrate used for the manufacturing method of the radiation image conversion panel of the 1st Embodiment of this invention. It is a typical perspective view which shows the conveyance method of the board | substrate used for the manufacturing method of the radiation image conversion panel of the 1st Embodiment of this invention. It is typical sectional drawing which shows the radiographic image conversion panel manufactured by the manufacturing method of the radiographic image conversion panel of the 1st Embodiment of this invention. (A) is typical sectional drawing which shows 2nd Embodiment of the radiographic image conversion panel manufacturing apparatus used for the manufacturing method of the radiographic image conversion panel of this invention, (b) is FIG. 8 (a). It is a typical sectional side view of the radiation image conversion panel manufacturing apparatus shown. (A) is typical sectional drawing which shows 3rd Embodiment of the radiation image conversion panel manufacturing apparatus used for the manufacturing method of the radiation image conversion panel of this invention, (b) is FIG. 9 (a). It is a typical sectional side view of the radiation image conversion panel manufacturing apparatus shown. It is a schematic diagram explaining the point defect in a radiation image conversion panel.

Explanation of symbols

10, 10a, 10b Radiation image conversion panel manufacturing device (manufacturing device)
DESCRIPTION OF SYMBOLS 12 Vacuum chamber 12a Bottom surface 12b, 12c Side surface 14 Substrate holding | maintenance conveyance means 16 Heating evaporation part 18 Vacuum pump 19 Gas introduction nozzle 20 Control part 22 Driving means 24 LM guide 24a Guide rail 24b Engagement member 26 (Substrate) holding means 30 Holding member 32 Ball screw 32a Screw shaft 32b Nut portion 34 Motor 36 Base 38 Holding mechanism 38a Mounting member 38b Holding member 40 Thermal insulation member 50, 52 Crucible 60 Cleaning roller 70, 102 Substrate 71, 104 Stimulable phosphor layer (phosphor layer)
72 Female thread portion 76 Pin 80 Arm portion 90, 100 Radiation image conversion panel 92, 96 Dust removal portion 94 Roller portion 106a Abnormally grown crystal H Hillock

Claims (16)

A method for manufacturing a radiation image conversion panel in which a phosphor layer is formed by vapor deposition in a closed vacuum chamber,
Setting a substrate in the vacuum chamber;
Removing dust on the surface of the substrate with the substrate set;
And a step of forming the phosphor layer on a substrate.   The method of manufacturing a radiation image conversion panel according to claim 1, wherein the step of removing dust from the surface of the substrate is performed in a state where the vacuum chamber is at atmospheric pressure.   Between the step of setting the substrate and the step of removing dust from the surface of the substrate, or before the step of setting the substrate, the step of setting a film forming material to be the phosphor layer in the vacuum chamber The manufacturing method of the radiation image conversion panel of Claim 1 or 2.   The manufacturing method of the radiation image conversion panel of any one of Claims 1-3 which has the process of obstruct | occluding the said vacuum chamber in the post process of the process of dedusting the surface of the said board | substrate.   The method of removing dust from the surface of the substrate uses at least one of a dust removal method using a cleaning roller, a method of blowing a gas to the substrate, and a method of removing electricity from the substrate. A method for producing the radiation image conversion panel according to claim 1. The cleaning roller has a roller part in contact with the surface of the substrate,
The said roller part is a manufacturing method of the radiation image conversion panel of Claim 5 comprised by what has at least 1 sort (s) as a main component among butyl rubber, a silicon | silicone, and urethane rubber.   The method for producing a radiation image conversion panel according to claim 5 or 6, wherein the dust removal by the cleaning roller is performed excluding the vicinity of the end of the phosphor layer forming region of the substrate. When the total length of the region where the phosphor layer is formed is a, and the width of the region where dust is not removed near the end is b,
0.03 ≦ b / a ≦ 0.4
The manufacturing method of the radiation image conversion panel of Claim 7 which satisfy | fills.   6. The step of removing dust from the surface of the substrate uses a method of blowing the gas and a method of discharging the substrate, and a method of discharging the substrate uses a charge removal device. Manufacturing method of radiation image conversion panel.   The method for manufacturing a radiation image conversion panel according to claim 9, wherein the static eliminator is an ion air generator. A radiation image conversion panel manufacturing apparatus for forming a phosphor layer on a surface of a sheet-like substrate by vacuum deposition,
A vacuum chamber;
Evacuation means for evacuating the vacuum chamber;
A resistance heating means provided in the vacuum chamber for heating the film-forming material of the phosphor layer housed in a container by resistance heating, and releasing the vapor of the film-forming material from an opening of the container;
A substrate holding means provided in the vacuum chamber and holding the substrate above the resistance heating means;
An apparatus for manufacturing a radiation image conversion panel, comprising: a dust removing unit that is provided in the vacuum chamber and removes the surface of the substrate. Furthermore, a control unit that controls the dust removing unit;
A first sensor connected to the control unit and detecting that the substrate is held by the substrate holding means;
The radiation image conversion panel manufacturing apparatus according to claim 11, wherein after receiving the detection result of the first sensor, the control unit causes the dust removing unit to remove dust from the surface of the substrate. Furthermore, a control unit that controls the dust removing unit;
A second sensor connected to the control unit and detecting that the film forming material is stored in the container;
The radiation image conversion panel manufacturing apparatus according to claim 11, wherein after receiving the detection result of the second sensor, the control unit causes the dust removing unit to remove dust from the surface of the substrate. Furthermore, a control unit that controls the dust removing unit;
A third sensor connected to the control unit and detecting that the vacuum chamber is closed;
The radiographic image conversion panel manufacturing apparatus according to claim 11, wherein after receiving the detection result of the third sensor, the control unit causes the dust removing unit to remove dust from the surface of the substrate. Furthermore, a control unit that controls the dust removing unit;
A vacuum gauge connected to the control unit and measuring the pressure in the vacuum chamber;
The radiation image conversion panel manufacturing apparatus according to claim 11, wherein when the pressure measured by the vacuum gauge is equal to or lower than a predetermined pressure, the control unit causes the dust removing unit to remove the surface of the substrate. Furthermore, a shutter provided to be openable and closable at the opening of the container;
A control unit for controlling the dust removing unit;
A fourth sensor connected to the control unit and detecting opening and closing of the shutter;
The radiation image conversion panel manufacturing apparatus according to claim 11, wherein the control unit causes the dust removal unit to remove the surface of the substrate after receiving the detection result of the shutter being opened by the fourth sensor.

Images