JP2007234817A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2007234817A
JP2007234817A JP2006053707A JP2006053707A JP2007234817A JP 2007234817 A JP2007234817 A JP 2007234817A JP 2006053707 A JP2006053707 A JP 2006053707A JP 2006053707 A JP2006053707 A JP 2006053707A JP 2007234817 A JP2007234817 A JP 2007234817A
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light
recess
phosphor
less
wavelength
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Kiyoko Kawashima
淨子 川島
Akiko Saito
明子 斉藤
Mitsuru Shiozaki
満 塩崎
Tomohiro Sanpei
友広 三瓶
Masami Iwamoto
正己 岩本
Hisayo Uetake
久代 植竹
Masahiro Toda
雅宏 戸田
Iwatomo Moriyama
厳與 森山
Akiko Nakanishi
晶子 中西
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of reducing an angle color difference and obtaining a color temperature of not more than 5,000 K easily in the light-emitting device having a recess with a relatively small diameter or depth for reducing the angle color difference easily. <P>SOLUTION: The light-emitting device comprises: a substrate having a recess where the diameter of an open end is not less than 1.0 mm and not more than 2.0 mm; a light-emitting element that is arranged in the recess and emits blue light; a resin layer that is formed in the recess so that the light-emitting element is covered, contains a phosphor that is excited by blue light emitted from the light-emitting element, emits at least yellow light, and contains a phosphor where coating volume in the recess is not more than 5 mm<SP>3</SP>; and a reflection layer that is formed at least at one part of the inner surface of the recess, where the reflection factor of light having a wavelength of 460 nm is not more than 50%, that of light having a wavelength of 540 nm is not less than 70%, and the ratio of the reflection factor of light having a wavelength of 540 nm to the reflection factor of light having a wavelength of 460 nm is not less than 1.3 and not more than 2.5. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、青色光を発する発光ダイオード(LED:Light Emitting Diode)等の発光素子を備えた発光装置に関する。   The present invention relates to a light emitting device including a light emitting element such as a light emitting diode (LED) that emits blue light.

発光ダイオード(LED:Light Emitting Diode)を用いたLEDランプは、液晶ディスプレイ、携帯電話、情報端末等のバックライト、屋内外広告等、多方面への展開が飛躍的に進んでいる。さらに、LEDランプは長寿命で信頼性が高く、また低消費電力、耐衝撃性、高純度表示色、軽薄短小化の実現等の特徴を有することから、産業用のみならず一般照明用途への適用も試みられている。このようなLEDランプを種々の用途に適用する場合、白色光を得ることが重要となる。   LED lamps using light emitting diodes (LEDs) are rapidly expanding in various fields such as backlights for liquid crystal displays, mobile phones, information terminals, indoor / outdoor advertisements, and the like. In addition, LED lamps have long life and high reliability, and have features such as low power consumption, impact resistance, high-purity display colors, and lightness and thinness. Application is also being attempted. When such an LED lamp is applied to various uses, it is important to obtain white light.

LEDランプで白色発光を実現する代表的な方式としては、(1)青、緑および赤の各色に発光する3つのLEDチップを使用する方式、(2)青色発光のLEDチップと黄色光ないし橙色光を発光する黄色系蛍光体とを組み合わせる方式、(3)紫外線発光のLEDチップと青色、緑色および赤色の三色混合蛍光体とを組み合わせる方式、の3つが挙げられる。これらのうち、輝度特性の観点から、(2)の青色光を発するLEDチップと黄色光ないし橙色光を発する黄色系蛍光体とを組み合わせる方式が広く実用化されている。   As a typical method for realizing white light emission with an LED lamp, (1) a method using three LED chips that emit light in blue, green and red colors, and (2) a blue light emitting LED chip and yellow light or orange light. There are three methods: a combination of yellow phosphors that emit light, and (3) a combination of ultraviolet light emitting LED chips and blue, green, and red three-color mixed phosphors. Among these, from the viewpoint of luminance characteristics, the method of combining the LED chip (2) that emits blue light and the yellow phosphor that emits yellow light or orange light has been widely put into practical use.

上記した(2)および(3)の方式を適用したLEDランプの構造として、LEDチップを装備したカップ型のフレーム内に、所望の色を発する蛍光体を混合した透明樹脂を流し込み、これを固化させて蛍光体を含有する樹脂層を形成した構造が採られている(例えば、特許文献1〜3参照)。このようなLEDランプにおいては、フリップチップ等のLEDチップの電極形状に基づく光の取出し効率の向上や、チップ形状の検討による配光制御等が進められており、チップ前面への光量は増加する傾向にある。   As a structure of the LED lamp to which the above methods (2) and (3) are applied, a transparent resin mixed with a phosphor emitting a desired color is poured into a cup-shaped frame equipped with an LED chip, and this is solidified. A structure in which a resin layer containing a phosphor is formed is employed (see, for example, Patent Documents 1 to 3). In such an LED lamp, improvement of light extraction efficiency based on the electrode shape of an LED chip such as a flip chip, light distribution control by examining the chip shape, etc. are being advanced, and the amount of light to the front surface of the chip increases. There is a tendency.

一方、これまで発展してきた産業用途に加え、急速な展開が予想される照明用途としては、照度を見込んだ多フレーム化が進んでいる。そして、多フレーム化の進行により、フレーム間での色のばらつきや個々のフレームにおける観察角度ごとの色の差(以下、「角度色差」と称する)が大きな問題となっており、これらを低減することが求められている。   On the other hand, in addition to industrial applications that have been developed so far, lighting applications that are expected to develop rapidly are becoming increasingly multi-frame in anticipation of illuminance. As the number of frames increases, color variations between frames and color differences at each observation angle in individual frames (hereinafter referred to as “angle color differences”) have become major problems, and these are reduced. It is demanded.

個々のフレームでの角度色差は、LEDチップから発する光(例えば青色光)と蛍光体から発する光(例えば黄色光ないし橙色光)との配光の差に起因するものであり、それを対策する因子としてカップ型フレームの内部の凹部形状、蛍光体を含有する樹脂層の塗布形状、蛍光体の粒径や配合比等が考えられている。
特開2001−148516公報 実開平6−54081号公報 特開平7−99345号公報
The angle color difference in each frame is caused by the difference in the light distribution between the light emitted from the LED chip (for example, blue light) and the light emitted from the phosphor (for example, yellow light or orange light), and measures are taken. As factors, the shape of the concave portion inside the cup-shaped frame, the shape of the resin layer containing the phosphor, the particle size of the phosphor, the mixing ratio, and the like are considered.
JP 2001-148516 A Japanese Utility Model Publication No. 6-54081 JP-A-7-99345

角度色差を低減させる方法として、例えばカップ型フレームの凹部の開口端の直径を小さくし、点光源に近づけることで、上記したような光路差を少なくすることが考えられる。また、凹部の深さを浅くすることによって、上記したような角度色差を少なくすることも考えられる。   As a method for reducing the angular color difference, for example, it is conceivable to reduce the optical path difference as described above by reducing the diameter of the opening end of the concave portion of the cup-shaped frame and bringing it closer to the point light source. It is also conceivable to reduce the angular color difference as described above by reducing the depth of the recess.

しかしながら、凹部の開口端の直径を小さくし、または、深さを浅くすると、結果的に凹部内の容積が減少するため、凹部内に蛍光体を含有する透明樹脂を十分に流し込むことが困難となる。このため、凹部内の蛍光体の量が少なくなり、特に黄色系蛍光体と共に加えられる赤色蛍光体の量が制限されるため、5000K以下といった低い色温度、例えば電球色等を得ることが困難となる。   However, if the diameter of the opening end of the concave portion is reduced or the depth is reduced, the volume in the concave portion is reduced as a result. Therefore, it is difficult to sufficiently flow the transparent resin containing the phosphor into the concave portion. Become. For this reason, the amount of the phosphor in the recess is reduced, and particularly the amount of the red phosphor added together with the yellow phosphor is limited, so that it is difficult to obtain a color temperature as low as 5000 K or less, for example, a light bulb color. Become.

本発明は上記したような課題を解決するためになされたものであって、角度色差を低減するために有効な開口端の直径が小さく、または、深さが浅い、比較的小さめの凹部を有するLEDランプ等の発光装置であって、角度色差が低減されると共に、特に5000K以下といった低い色温度を容易に得ることのできる発光装置を提供することを目的としている。   The present invention has been made to solve the above-described problems, and has a relatively small concave portion with a small diameter or a shallow depth that is effective for reducing the angular color difference. An object of the present invention is to provide a light emitting device such as an LED lamp, which can reduce an angular color difference and can easily obtain a color temperature as low as 5000 K or less.

請求項1記載の発光装置は、開口端の直径が1.0mm以上2.0mm以下の凹部を備える基体と;前記凹部内に配置された青色光を発する発光素子と;前記発光素子を覆うように前記凹部内に形成され、前記発光素子から発せられた青色光により励起されて少なくとも黄色光を発する蛍光体を少なくとも含有する樹脂層であって、前記凹部における塗布体積が5mm以下である蛍光体含有樹脂層と;前記凹部の内面の少なくとも一部に形成され、波長460nmの光の反射率が50%以下、波長540nmの光の反射率が70%以上、かつ、前記波長460nmの光の反射率に対する前記波長540nmの光の反射率の比が1.3以上2.5以下である反射層と;を具備することを特徴としている。 The light-emitting device according to claim 1, a base including a recess having a diameter of an opening end of 1.0 mm to 2.0 mm; a light-emitting element that emits blue light disposed in the recess; and covers the light-emitting element A resin layer containing at least a phosphor that is formed in the recess and is excited by blue light emitted from the light emitting element and emits at least yellow light, wherein the coating volume in the recess is 5 mm 3 or less. A body-containing resin layer; formed on at least a part of the inner surface of the recess, having a reflectance of light of a wavelength of 460 nm of 50% or less, a reflectance of light of a wavelength of 540 nm of 70% or more, and the light of a wavelength of 460 nm A reflection layer having a ratio of the reflectance of the light having a wavelength of 540 nm to the reflectance of 1.3 or more and 2.5 or less.

請求項2記載の発光装置は、深さが0.5mm以上0.8mm以下の凹部を備える基体と;前記凹部内に配置された青色光を発する発光素子と;前記発光素子を覆うように前記凹部内に形成され、前記発光素子から発せられた青色光により励起されて少なくとも黄色光を発する蛍光体を少なくとも含有する樹脂層であって、前記凹部における塗布体積が5mm以下である蛍光体含有樹脂層と;前記凹部の内面の少なくとも一部に形成され、波長460nmの光の反射率が50%以下、波長540nmの光の反射率が70%以上、かつ、前記波長460nmの光の反射率に対する前記波長540nmの光の反射率の比が1.3以上2.5以下である反射層と;を具備することを特徴としている。 The light-emitting device according to claim 2, wherein the base includes a recess having a depth of 0.5 mm or more and 0.8 mm or less; a light-emitting element that emits blue light disposed in the recess; and the light-emitting element covers the light-emitting element. A resin layer containing at least a phosphor that is formed in a recess and is excited by blue light emitted from the light emitting element and emits at least yellow light, the coating volume in the recess being 5 mm 3 or less A resin layer; formed on at least a part of the inner surface of the concave portion; the reflectance of light having a wavelength of 460 nm is 50% or less; the reflectance of light having a wavelength of 540 nm is 70% or more; and the reflectance of light having a wavelength of 460 nm And a reflective layer having a reflectance ratio of light having a wavelength of 540 nm to 1.3 to 2.5.

請求項3記載の発光装置は、請求項1または2記載の発光装置において、前記反射層が金からなるものであることを特徴としている。   The light emitting device according to claim 3 is the light emitting device according to claim 1 or 2, wherein the reflective layer is made of gold.

請求項4記載の発光装置は、請求項1乃至3のいずれか1項記載の発光装置において、観察角度が0度を超え70度以下における角度色差(Δuv)が0.012以下であることを特徴としている。   The light-emitting device according to claim 4 is the light-emitting device according to any one of claims 1 to 3, wherein an angle color difference (Δuv) at an observation angle of more than 0 ° and 70 ° or less is 0.012 or less. It is a feature.

請求項5記載の発光装置は、請求項1乃至4のいずれか1項記載の発光装置において、色温度が5000K以下であることを特徴としている。   The light emitting device according to claim 5 is the light emitting device according to any one of claims 1 to 4, characterized in that the color temperature is 5000K or less.

本発明における用語の定義および技術的意味は、特に指定しない限り以下の通りである。   The definitions and technical meanings of terms in the present invention are as follows unless otherwise specified.

基体は、外部に開口した凹部を有するものであり、例えば回路パターンやリード端子のような配線部を有する基板と、この基板上に設けられ外部に開口した凹部を有するフレームとから構成されるものである。この凹部内に発光素子が配置され実装される。なお、基体は、フレームを使用せずに基板上に直接凹部を形成したものであってもよい。   The base has a concave portion opened to the outside, and is composed of, for example, a substrate having a wiring portion such as a circuit pattern or a lead terminal, and a frame provided on the substrate and having a concave portion opened to the outside. It is. A light emitting element is disposed and mounted in the recess. The base may be one in which a recess is formed directly on the substrate without using a frame.

発光素子は、青色光を発するものであり、例えば青色発光タイプのLEDチップが例示される。蛍光体は、発光素子から発せられた青色光により励起されて少なくとも黄色光を発する蛍光体であり、必要に応じてこの蛍光体と共に赤色光を発光する赤色蛍光体や緑色光を発する緑色蛍光体が用いられる。   The light emitting element emits blue light, and for example, a blue light emitting type LED chip is exemplified. A phosphor is a phosphor that emits at least yellow light when excited by blue light emitted from a light emitting element, and a red phosphor that emits red light or a green phosphor that emits green light as needed. Is used.

蛍光体含有樹脂層は、このような蛍光体を透明樹脂に混合し分散させた層であり、発光素子を覆うように基体の凹部内に形成される。塗布体積は、凹部に実際に塗布された蛍光体含有樹脂層の体積であり、凹部内に塗布された蛍光体含有樹脂層の体積はもちろんのこと、例えば凹部の開口端から蛍光体含有樹脂層の一部が突出して凸部を形成している場合には、この凸部の体積も含むものである。 The phosphor-containing resin layer is a layer in which such a phosphor is mixed and dispersed in a transparent resin, and is formed in the recess of the base so as to cover the light emitting element. The coating volume is the volume of the phosphor-containing resin layer actually applied to the recess, and of course the volume of the phosphor-containing resin layer applied in the recess, for example, the phosphor-containing resin layer from the opening end of the recess When a part of the projection protrudes to form a convex portion, the volume of the convex portion is also included.

反射層は、波長460nmの光の反射率が50%以下、波長540nmの光の反射率が70%以上、かつ、波長460nmの光の反射率に対する波長540nmの光の反射率の比(波長540nmの光の反射率/波長460nmの光の反射率)が1.3以上2.5以下という反射特性を有するものであり、このようなものとしては例えば金からなるものが好適なものとして挙げられる。   The reflective layer has a reflectance of light of wavelength 460 nm of 50% or less, a reflectance of light of wavelength 540 nm of 70% or more, and a ratio of the reflectance of light of wavelength 540 nm to the reflectance of light of wavelength 460 nm (wavelength 540 nm). (Reflectance of light / reflectivity of light having a wavelength of 460 nm) has a reflection characteristic of 1.3 or more and 2.5 or less. Examples of such a material include those made of gold. .

反射層は凹部の内面、すなわち内側側面および外側側面の少なくとも一部に形成されるものであり、好ましくは凹部の少なくとも内側側面に形成され、さらに好ましくは内側側面および外側側面からなる内面の全体に形成される。   The reflective layer is formed on the inner surface of the recess, that is, at least a part of the inner side surface and the outer side surface, preferably formed on at least the inner side surface of the recess, and more preferably on the entire inner surface composed of the inner side surface and the outer side surface. It is formed.

角度色差(Δuv)は、CIE 1976 UCS系色度図のu値、v値から計算される観察角度ごとの色度の差である。観察角度が0度を超え70度以下における色度の差が0.012以下であれば、人間の目に色のばらつきとして認識されないが、それを超える場合には色のばらつきとして認識される。観察角度X度における角度色差(Δuv)は、次式(1)により求めることができる。   The angle color difference (Δuv) is a difference in chromaticity for each observation angle calculated from the u value and the v value in the CIE 1976 UCS system chromaticity diagram. If the difference in chromaticity when the observation angle is greater than 0 degrees and less than 70 degrees is 0.012 or less, it is not recognized as a color variation by human eyes, but if it exceeds that, it is recognized as a color variation. The angular color difference (Δuv) at the observation angle X degree can be obtained by the following equation (1).

Δuv={(u−u+(v−v1/2 ………(1)
ここでu、vは、観察角度X度において、波長380〜780nmの発光スペクトルを測定したときのu値,v値(CIE 1976 UCS系色度図)であり、u、vは観察角度0度において、波長380〜780nmの発光スペクトルを測定したときのu値、v値である。なお、観察角度X度、0度における発光スペクトルは、それぞれ蛍光体含有樹脂層の上面の中心から300mm離れた箇所において、瞬間分光光度計により測定される。
Δuv = {(u X −u 0 ) 2 + (v X −v 0 ) 2 } 1/2 (1)
Here, u X and v X are u value and v value (CIE 1976 UCS system chromaticity diagram) when an emission spectrum with a wavelength of 380 to 780 nm is measured at an observation angle of X degrees, and u 0 and v 0 are They are u value and v value when an emission spectrum with a wavelength of 380 to 780 nm is measured at an observation angle of 0 degree. Note that the emission spectra at the observation angles of X degrees and 0 degrees are measured by an instantaneous spectrophotometer at a location 300 mm away from the center of the upper surface of the phosphor-containing resin layer.

請求項1および請求項2記載の発明によれば、特定の大きさの開口端または深さを有する凹部に特定の塗布体積の蛍光体含有樹脂層を形成するものにおいて、凹部の内面の少なくとも一部に特定の反射特性を有する反射層を形成することで、角度色差が低減されると共に、電球色のような低い色温度が容易に得られ、さらには発光効率に優れた発光装置とすることができる。   According to the first and second aspects of the invention, the phosphor-containing resin layer having a specific coating volume is formed in the concave portion having an opening end or depth having a specific size, and at least one of the inner surfaces of the concave portion is formed. By forming a reflective layer having specific reflection characteristics in the part, the angle color difference is reduced, a low color temperature like a light bulb color can be easily obtained, and a light emitting device with excellent luminous efficiency is obtained. Can do.

請求項3記載の発明によれば、反射層が金により構成されているので、反射層の酸化または硫化による経年劣化を防止または低減することができる。   According to the third aspect of the invention, since the reflective layer is made of gold, it is possible to prevent or reduce deterioration over time due to oxidation or sulfuration of the reflective layer.

請求項4記載の発明によれば、照明用途として人への影響が少ない角度色差を実現することができる。   According to the fourth aspect of the present invention, it is possible to realize an angular color difference that has little influence on a person as a lighting application.

請求項5記載の発明によれば、例えば5000K以下といった低い色温度のものを容易に得ることができる。   According to the invention described in claim 5, a color temperature as low as 5000K or less can be easily obtained.

以下、本発明を実施するための形態について、図面を参照して説明する。なお、複数の図面中、同一または相当する部分には同一の符号を付している。図1は、本発明の発光装置の一例であるLEDランプ1の構成を示す断面図、図2は、図1に示すLEDランプ1の複数個を一平面上に3行3列のマトリックス状に配置した本発明の発光装置の他の例であるLEDモジュール20を示す平面図、図3は、図2のA−A´線断面図である。なお、LEDモジュール20は、例えば、複数のLEDランプが1列に配置され一体に連成された構造を有していてもよい。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, the same code | symbol is attached | subjected to the part which is the same or it corresponds in several drawing. FIG. 1 is a cross-sectional view showing a configuration of an LED lamp 1 which is an example of a light-emitting device of the present invention. FIG. 2 is a diagram showing a plurality of LED lamps 1 shown in FIG. FIG. 3 is a cross-sectional view taken along the line AA ′ of FIG. 2, and FIG. 3 is a plan view showing an LED module 20 which is another example of the light emitting device of the present invention arranged. Note that the LED module 20 may have a structure in which, for example, a plurality of LED lamps are arranged in a row and integrally coupled.

図1に示すLEDランプ1は、表面に凹部2を備えた基体3を有している。基体3は、例えば基板4上に電気絶縁層5、回路パターン6およびフレーム7が順に積層された構造を有し、凹部2はフレーム7に形成されている。凹部2は開口端2aを有するものであり、その内面である内側側面2bおよび内側底面2cに反射層8が形成されている。   The LED lamp 1 shown in FIG. 1 has a base 3 having a recess 2 on the surface. The base 3 has, for example, a structure in which an electrical insulating layer 5, a circuit pattern 6, and a frame 7 are sequentially laminated on a substrate 4, and the recess 2 is formed in the frame 7. The recess 2 has an open end 2a, and a reflective layer 8 is formed on the inner side surface 2b and the inner bottom surface 2c, which are the inner surfaces thereof.

LEDチップ10は回路パターン6における一方の電極(陰極または陽極)上に反射層8を介して搭載され、その底面電極が導電性を有する反射層8を介して上記一方の電極に電気的に接続されている。また、LEDチップ10の上面電極は金線のようなボンディングワイヤ11を介して回路パターン6の他方の電極上に形成された反射層8に接続されている。そして、凹部2の内部には、LEDチップ10を覆うように蛍光体含有樹脂層12が形成されている。   The LED chip 10 is mounted on one electrode (cathode or anode) in the circuit pattern 6 via a reflective layer 8, and its bottom electrode is electrically connected to the one electrode via the conductive reflective layer 8. Has been. The upper surface electrode of the LED chip 10 is connected to the reflective layer 8 formed on the other electrode of the circuit pattern 6 through a bonding wire 11 such as a gold wire. A phosphor-containing resin layer 12 is formed inside the recess 2 so as to cover the LED chip 10.

基板4は、例えば放熱性と剛性を有するアルミニウム(Al)やニッケル(Ni)、ガラスエポキシ等の平板から成り、その上に電気絶縁層5を介して、例えばCuとNiの合金やAu等から成る陰極側と陽極側の回路パターン6がそれぞれ形成されている。陰極側と陽極側の回路パターン6の間には、樹脂等の電気絶縁体部9が介在している。また、凹部2を有するフレーム7は、例えば、PBT(ポリブチレンテレフタレート)、PPA(ポリフタルアミド)、PC(ポリカーボネート)等の合成樹脂から構成されている。   The substrate 4 is made of, for example, a flat plate made of aluminum (Al), nickel (Ni), glass epoxy or the like having heat dissipation and rigidity, and is made of, for example, an alloy of Cu and Ni, Au, or the like via an electrical insulating layer 5 thereon. The cathode side and anode side circuit patterns 6 are respectively formed. Between the circuit pattern 6 on the cathode side and the anode side, an electrical insulator portion 9 such as resin is interposed. The frame 7 having the recesses 2 is made of a synthetic resin such as PBT (polybutylene terephthalate), PPA (polyphthalamide), or PC (polycarbonate).

凹部2は、開口端2aの直径Dが1.0mm以上2.0mm以下であるか、または、凹部2の深さd(開口端2aから底面2bまでの底面2bに垂直な方向の距離)が0.5mm以上0.8mm以下のものである。このように、本発明では凹部2の大きさを一般的なものに比べて小さめに設定することにより、LEDチップ10から発する光と蛍光体から発する光との光路差を少なくし、角度色差を低減させることができる。   In the recess 2, the diameter D of the opening end 2 a is 1.0 mm or more and 2.0 mm or less, or the depth d of the recess 2 (distance in the direction perpendicular to the bottom surface 2 b from the opening end 2 a to the bottom surface 2 b). 0.5 mm or more and 0.8 mm or less. Thus, in the present invention, by setting the size of the concave portion 2 to be smaller than that of a general one, the optical path difference between the light emitted from the LED chip 10 and the light emitted from the phosphor is reduced, and the angle color difference is reduced. Can be reduced.

なお、上記したように、開口端2aの直径Dおよび深さdは同時に上記範囲内にある必要はなく、いずれか一方が上記範囲内にあればよい。すなわち、凹部2の開口端2aの直径Dが2.0mmを超えると同時に深さdが0.8mmを超える場合、凹部2の大きさが大きくなり、角度色差を十分に低減させることができなくなる。   As described above, the diameter D and the depth d of the open end 2a do not need to be in the above range at the same time, and any one of them may be in the above range. That is, when the diameter D of the opening end 2a of the recess 2 exceeds 2.0 mm and the depth d exceeds 0.8 mm, the size of the recess 2 increases, and the angular color difference cannot be sufficiently reduced. .

角度色差を低減させる観点からは開口端2aの直径Dおよび深さdは上記範囲内であれば特に問題はないが、開口端2aの直径Dが1.0mm未満といったように小さすぎる場合、蛍光体含有樹脂層12を形成する際に、蛍光体含有樹脂が凹部2から溢れ出てしまうおそれがある。また、このような直径Dを有するものについては、そもそも蛍光体含有樹脂の塗布体積の調整が困難なため、例えばLEDモジュール20のように複数個のLEDランプ1を平面上に配置したものについては、各LEDランプ1ごとの色のばらつきが多くなる。   From the viewpoint of reducing the angle color difference, there is no particular problem as long as the diameter D and the depth d of the opening end 2a are within the above ranges, but if the diameter D of the opening end 2a is too small such as less than 1.0 mm, the fluorescence When the body-containing resin layer 12 is formed, the phosphor-containing resin may overflow from the recess 2. For those having such a diameter D, since it is difficult to adjust the coating volume of the phosphor-containing resin in the first place, for example, a plurality of LED lamps 1 arranged on a plane like the LED module 20 is used. The color variation for each LED lamp 1 increases.

一方、深さdが0.5mm未満といったように浅すぎる場合、蛍光体含有樹脂層12の表面からLEDチップ10の上面電極に接続されたボンディングワイヤ11が露出してしまうおそれがある。このため、凹部2の開口端2aの直径Dは1.0mm以上であり、深さdは0.5mm以上である。   On the other hand, when the depth d is too shallow such as less than 0.5 mm, the bonding wire 11 connected to the upper surface electrode of the LED chip 10 may be exposed from the surface of the phosphor-containing resin layer 12. For this reason, the diameter D of the opening end 2a of the recessed part 2 is 1.0 mm or more, and the depth d is 0.5 mm or more.

開口端2aの直径Dまたは深さdのいずれか一方を上記したように調整した場合の他方となる開口端2aの直径Dまたは深さdについては、塗布体積が5mm以下である蛍光体含有樹脂層12を形成できる程度のものであればよく、例えば開口端2aの直径Dを上記したような1.0mm以上2.0mm以下とする場合には、深さdは、0.8mm以上1.2mm以下とすることが好ましく、また深さdを上記したような0.5mm以上0.8mm以下とする場合には、開口端2aの直径Dを2.0mm以上3.5mm以下とすることが好ましい。 Containing a phosphor having a coating volume of 5 mm 3 or less with respect to the diameter D or depth d of the other open end 2a when either the diameter D or the depth d of the open end 2a is adjusted as described above For example, when the diameter D of the open end 2a is set to 1.0 mm or more and 2.0 mm or less as described above, the depth d is 0.8 mm or more and 1 as long as the resin layer 12 can be formed. .2 mm or less, and when the depth d is 0.5 mm or more and 0.8 mm or less as described above, the diameter D of the open end 2a is 2.0 mm or more and 3.5 mm or less. Is preferred.

以下の表1は、凹部2の開口端2aの直径Dと角度色差(Δuv)との関係を示したものであり、表2は、凹部2の深さdと角度色差(Δuv)との関係を示したものである。なお、試料No.1〜8は凹部2の内側側面2bおよび内側底面2cにNiメッキ層のみを形成したものであり、表1に示す試料No.1〜4は深さdを1.0mmと一定にし、表2に示す試料No.5〜7は開口端2aの直径Dを3.0mmと一定にしたものである。   Table 1 below shows the relationship between the diameter D of the opening end 2a of the recess 2 and the angle color difference (Δuv), and Table 2 shows the relationship between the depth d of the recess 2 and the angle color difference (Δuv). Is shown. Sample No. Nos. 1 to 8 are obtained by forming only the Ni plating layer on the inner side surface 2b and the inner bottom surface 2c of the recess 2. 1-4 have a constant depth d of 1.0 mm, and sample Nos. 5-7 make the diameter D of the opening end 2a constant at 3.0 mm.

Figure 2007234817
Figure 2007234817

Figure 2007234817
Figure 2007234817

表1から明らかなように、開口端2aの直径Dが1.0mm以上2.0mm以下である試料No.2〜3については、いずれの観察角度の場合についても、角度色差(Δuv)が人間の目に色のばらつきとして認識されない0.012以下となるのに対し、開口端2aの直径Dが2.0mmを超える試料No.4は観察角度が70°の場合に角度色差(Δuv)が0.012を超えてしまうことがわかる。なお、試料No.1については角度色差(Δuv)には問題がないものの、凹部2の開口端2aの直径Dが小さすぎるため、蛍光体含有樹脂層12を形成する際に、凹部2から蛍光体含有樹脂が溢れ出してしまう等の問題がある。   As can be seen from Table 1, the sample No. 2 in which the diameter D of the open end 2a is 1.0 mm or more and 2.0 mm or less. 2 to 3, in any observation angle, the angle color difference (Δuv) is 0.012 or less which is not recognized as a color variation by human eyes, whereas the diameter D of the open end 2a is 2. Sample No. exceeding 0 mm 4 shows that the angle color difference (Δuv) exceeds 0.012 when the observation angle is 70 °. Sample No. Although there is no problem with the angular color difference (Δuv) for No. 1, the diameter D of the opening end 2a of the recess 2 is too small, and therefore the phosphor-containing resin overflows from the recess 2 when the phosphor-containing resin layer 12 is formed. There is a problem such as getting out.

また、表2から明らかなように、深さdが0.5mm以上0.8mm以下である試料No.5、6については、いずれの観察角度の場合についても、角度色差(Δuv)が人間の目に色のばらつきとして認識されない0.012以下となるのに対し、深さdが0.8mmを超える試料No.7は観察角度が70°の場合に角度色差(Δuv)が0.012を超えてしまうことがわかる。   Further, as apparent from Table 2, the sample No. having a depth d of 0.5 mm or more and 0.8 mm or less. For 5 and 6, the angle color difference (Δuv) is 0.012 or less which is not recognized as a color variation by human eyes, but the depth d exceeds 0.8 mm in any observation angle. Sample No. 7 shows that the angle color difference (Δuv) exceeds 0.012 when the observation angle is 70 °.

反射層8は、上記したように凹部2の内面である内側側面2bおよび内側底面2cに形成されており、さらに内側底面2cに形成される反射層8は陰極側と陽極側の回路パターン6に対応し、電気絶縁体部9により陰極側と陽極側に絶縁されている。   The reflection layer 8 is formed on the inner side surface 2b and the inner bottom surface 2c, which are the inner surfaces of the recess 2, as described above, and the reflection layer 8 formed on the inner bottom surface 2c is formed on the circuit patterns 6 on the cathode side and the anode side. Correspondingly, it is insulated from the cathode side and the anode side by the electric insulator 9.

この反射層8は、LEDチップ10からの青色光に相当する波長460nmの光の反射率が50%以下、蛍光体からの黄色系発光に相当する波長540nmの光の反射率が70%以上、かつ、波長460nmの光の反射率に対する波長540nmの光の反射率の比(波長540nmの光の反射率/波長460nmの光の反射率)が1.3以上2.5以下である反射特性を有している。   The reflective layer 8 has a reflectance of light having a wavelength of 460 nm corresponding to blue light from the LED chip 10 of 50% or less, and a reflectance of light having a wavelength of 540 nm corresponding to yellow light emission from the phosphor is 70% or more. Further, a reflection characteristic in which the ratio of the reflectance of the light of wavelength 540 nm to the reflectance of the light of wavelength 460 nm (the reflectance of the light of wavelength 540 nm / the reflectance of the light of wavelength 460 nm) is 1.3 or more and 2.5 or less. Have.

波長460nmの光の反射率が50%を超える場合、色温度を5000K以下、例えば電球色等とすることが困難となる。すなわち、波長460nmの光の反射率が50%を超える場合、LEDチップ10からの青色光の反射が多くなり、5000K以下の色温度、例えば電球色とするためには、蛍光体含有樹脂層12中に赤色蛍光体を多く含有させなければならない。   When the reflectance of light having a wavelength of 460 nm exceeds 50%, it becomes difficult to set the color temperature to 5000 K or less, for example, a light bulb color. That is, when the reflectance of light having a wavelength of 460 nm exceeds 50%, the reflection of blue light from the LED chip 10 increases, and in order to obtain a color temperature of 5000 K or less, for example, a light bulb color, the phosphor-containing resin layer 12. A large amount of red phosphor must be contained therein.

しかし、本発明のように凹部2の大きさを一般的なものに比べて小さめに設定した場合、凹部内の蛍光体の量が少なくなり、特に黄色系蛍光体と共に加えられる赤色蛍光体の量が制限されるため、5000K以下の色温度、例えば電球色等を得にくくなる。   However, when the size of the concave portion 2 is set to be smaller than that of a general one as in the present invention, the amount of the phosphor in the concave portion is reduced, and particularly the amount of the red phosphor added together with the yellow phosphor. Therefore, it becomes difficult to obtain a color temperature of 5000 K or less, such as a light bulb color.

また、波長540nmの光の反射率が70%未満の場合には、蛍光体から発せられる黄色光ないし橙色光、さらには赤色光の反射が少なくなり、5000K以下の色温度、例えば電球色等を得にくくなる。   Further, when the reflectance of light having a wavelength of 540 nm is less than 70%, the reflection of yellow light or orange light emitted from the phosphor and further red light is reduced, and a color temperature of 5000 K or less, for example, a light bulb color, etc. It becomes difficult to obtain.

さらに、波長460nmの光や波長540nmの光の反射率が上記したような範囲内となっている場合であっても、これらの反射率の比(波長540nmの光の反射率/波長460nmの光の反射率)が1.3未満の場合には、やはりLEDチップ10からの青色光の反射に比較して蛍光体から発せられる黄色光ないし橙色光、さらには赤色光の反射が相対的に少なくなるため、5000K以下の色温度、例えば電球色等を得にくくなる。また、上記反射率の比が2.5を超えると、LEDチップ10からの青色光の反射に対して蛍光体から発せられる黄色光ないし橙色光や赤色光の反射が多すぎることとなり、視感効果が低下する。   Further, even when the reflectance of light having a wavelength of 460 nm or light having a wavelength of 540 nm is within the above-described range, the ratio of these reflectances (reflectance of light having a wavelength of 540 nm / light having a wavelength of 460 nm) Is less than 1.3, the yellow or orange light emitted from the phosphor and the red light are relatively less reflected than the blue light reflected from the LED chip 10. Therefore, it becomes difficult to obtain a color temperature of 5000 K or less, such as a light bulb color. On the other hand, if the reflectance ratio exceeds 2.5, the yellow light, orange light, or red light emitted from the phosphor is excessively reflected from the blue light reflected from the LED chip 10, so that The effect is reduced.

上記したような反射特性を有する反射層8としては、例えばAu(金)からなるものが挙げられ、メッキ法等により形成されるものが挙げられる。反射層8の厚さは、所要波長での全反射率が高いことから、0.2μm以上0.4μm以下とすることが好ましい。   Examples of the reflection layer 8 having the above-described reflection characteristics include those made of Au (gold), and those formed by a plating method or the like. The thickness of the reflective layer 8 is preferably 0.2 μm or more and 0.4 μm or less because the total reflectance at a required wavelength is high.

図4は、Au(金)メッキ層の反射特性を表す可視光反射率を、Ni(ニッケル)メッキ層の反射特性を表す可視光反射率と比較して示したグラフである。図中、A曲線で示すように、Niメッキ層の可視光反射率は、青色発光LEDチップ10の青色光の波長(例えば460nm)を含む400〜480nmの短波長域における反射率が、約50%程度で比較的高いものの、550nm以上の長波長域における反射率が約65〜70%程度で必ずしも高くない。   FIG. 4 is a graph showing the visible light reflectance representing the reflection characteristics of the Au (gold) plating layer compared with the visible light reflectance representing the reflection characteristics of the Ni (nickel) plating layer. As shown by the curve A in the figure, the visible light reflectance of the Ni plating layer is about 50 in the short wavelength region of 400 to 480 nm including the wavelength of blue light (for example, 460 nm) of the blue light emitting LED chip 10. %, The reflectance in a long wavelength region of 550 nm or more is about 65 to 70%, which is not necessarily high.

これに対して、B曲線で示すように、Auメッキ層の可視光反射率は、青色発光LEDチップ10の青色光の波長(例えば460nm)を含む400〜480nmの短波長域における反射率が約40%程度で、Niメッキ層の反射率よりも低いが、550nm以上の長波長域における反射率が約80〜100%であり、Niメッキ層の反射率より20〜30%程度高くなっている。   On the other hand, as shown by the B curve, the visible light reflectance of the Au plating layer is approximately the reflectance in the short wavelength region of 400 to 480 nm including the wavelength of blue light (for example, 460 nm) of the blue light emitting LED chip 10. About 40%, which is lower than the reflectance of the Ni plating layer, but the reflectance in the long wavelength region of 550 nm or more is about 80 to 100%, which is about 20 to 30% higher than the reflectance of the Ni plating layer. .

図に示すように、Auメッキ層は、波長460nmの光の反射率が約40%と50%以下であるとともに、波長540nmの光の反射率が約80%と70%以上であり、かつ、前者の反射率に対して後者の反射率が約2倍となるので、本発明における反射層としての要件を備えるものである。   As shown in the figure, the Au plating layer has a light reflectance of about 460 nm and about 50% or less, a light reflectance of about 540 nm and about 80% and 70% or more, and Since the latter reflectivity is about twice that of the former reflectivity, the requirement as a reflective layer in the present invention is provided.

反射層8は、凹部2の内側側面2bおよび内側底面2cに一体に形成されていることが好ましいが、別々に形成されていてもよい。また、反射層8は、凹部2の内側側面2bおよび内側底面2c、すなわち凹部2の内面のほぼ全てに形成されていれば好ましいが、内側側面2bおよび内側底面2cの中から選ばれる一方の面にのみ形成されていてもよい。内側側面2bおよび内側底面2cの両方に形成した場合には、光の反射率がより向上するので、その分、5000K以下の色温度、例えば電球色等を得やすくなる。   The reflective layer 8 is preferably formed integrally with the inner side surface 2b and the inner bottom surface 2c of the recess 2, but may be formed separately. The reflective layer 8 is preferably formed on the inner side surface 2b and the inner bottom surface 2c of the recess 2, that is, almost all of the inner surface of the recess 2, but one surface selected from the inner side surface 2b and the inner bottom surface 2c. It may be formed only on. When formed on both the inner side surface 2b and the inner bottom surface 2c, the reflectance of light is further improved, and accordingly, a color temperature of 5000K or less, such as a light bulb color, is easily obtained.

さらに、反射層8の下部、すなわち反射層8と凹部2との間には、下地層(図示せず)を形成してもよい。下地層としては、例えばNiからなるものが挙げられ、メッキ法等により形成されるものが挙げられる。下地層としてNi層を形成した場合には、Auからなる反射層8を塗布する際の塗布性が向上するという利点がある。   Furthermore, a base layer (not shown) may be formed below the reflective layer 8, that is, between the reflective layer 8 and the recess 2. Examples of the underlayer include those made of Ni, for example, those formed by a plating method or the like. In the case where the Ni layer is formed as the underlayer, there is an advantage that the coating property when the reflective layer 8 made of Au is applied is improved.

LEDチップ10は、例えば窒化ガリウム(GaN)系半導体からなり、印加された電気エネルギーにより主波長が420〜480nm(例えば460nm)の青色光を発光するものである。LEDチップ10の一辺の長さは、開口端2aの直径Dまたは深さdが上記したような範囲内にある凹部2内に配置するために適当な大きさであることから、200nm以上1mm以下であることが好ましい。   The LED chip 10 is made of, for example, a gallium nitride (GaN) -based semiconductor, and emits blue light having a dominant wavelength of 420 to 480 nm (for example, 460 nm) by applied electric energy. The length of one side of the LED chip 10 is 200 nm or more and 1 mm or less because the diameter D or the depth d of the opening end 2a is an appropriate size for placement in the recess 2 within the above-described range. It is preferable that

なお、LEDチップ10の電極接続構造としては、フリップチップ接続構造を適用することもできる。これらの電極接続構造によれば、LEDチップ10の前面への光取出し効率が向上する。   Note that a flip-chip connection structure can also be applied as the electrode connection structure of the LED chip 10. According to these electrode connection structures, the light extraction efficiency to the front surface of the LED chip 10 is improved.

凹部2内には、黄色系蛍光体を透明樹脂に混合・分散させた蛍光体含有樹脂が塗布されており、LEDチップ10はこのような蛍光体含有樹脂の硬化物である蛍光体含有樹脂層12により覆われている。蛍光体含有樹脂層12は、例えば、黄色系蛍光体をシリコーン樹脂やエポキシ樹脂等の液状の透明樹脂に添加、混合したものを、ディスペンサにより凹部2内に滴下・塗布し、硬化させることにより形成される。   In the recess 2, a phosphor-containing resin in which a yellow phosphor is mixed and dispersed in a transparent resin is applied, and the LED chip 10 is a phosphor-containing resin layer that is a cured product of such a phosphor-containing resin. 12 is covered. The phosphor-containing resin layer 12 is formed, for example, by adding and mixing a yellow phosphor to a liquid transparent resin such as a silicone resin or an epoxy resin, and dropping and applying the mixture into the recess 2 with a dispenser, followed by curing. Is done.

黄色系蛍光体としては、例えば、RE(Al,Ga)12:Ce蛍光体(REはY、GdおよびLaから選ばれる少なくとも1種を示す。)等のYAG蛍光体、AESiO:Eu蛍光体(AEはSr、Ba、Ca等のアルカリ土類元素である。)等の珪酸塩蛍光体、n−UVLED BGR、窒化物蛍光体、酸窒化物蛍光体、サイアロン蛍光体等が用いられる。 Examples of yellow phosphors include YAG phosphors such as RE 3 (Al, Ga) 5 O 12 : Ce phosphor (RE represents at least one selected from Y, Gd, and La), AE 2 SiO, and the like. 4 : Silicate phosphor such as Eu phosphor (AE is an alkaline earth element such as Sr, Ba, Ca), n-UVLED BGR, nitride phosphor, oxynitride phosphor, sialon phosphor, etc. Is used.

また、色温度を5000K以下、例えば電球色とするため、あるいは、演色性等の向上を図るために、このような黄色系蛍光体とともに、LEDチップ10から発せられた青色光により励起されて赤色光を発光する赤色蛍光体を含有させてもよい。赤色蛍光体としては、LaS:Eu蛍光体のような酸硫化物蛍光体等が用いられるが、特に限定されるものではない。 Further, in order to change the color temperature to 5000 K or less, for example, a light bulb color, or to improve the color rendering, etc., the red color is excited by the blue light emitted from the LED chip 10 together with such a yellow phosphor. You may contain the red fluorescent substance which light-emits light. As the red phosphor, an oxysulfide phosphor such as a La 2 O 2 S: Eu phosphor is used, but it is not particularly limited.

このような蛍光体含有樹脂層12は、凹部2における塗布体積が5mm以下である。上記したように開口端2aの直径Dが1.0mm以上2.0mm以下あるいは深さdが0.5mm以上0.8mm以下といった比較的小さめの凹部2とする場合、塗布体積が5mmを超えるような蛍光体含有樹脂層12を形成しようとすると、凹部2の深さに対する蛍光体含有樹脂層12の厚さ(開口端2aの水平面を超えて凸状に形成された部分を含む)の比が1.2を超えることとなり、蛍光体含有樹脂を塗布する際や硬化させる際に、加熱により粘度が低下した蛍光体含有樹脂が凹部2から溢れ出てしまうおそれがある。 Such a phosphor-containing resin layer 12 has an application volume in the recess 2 of 5 mm 3 or less. As described above, when the recess 2 is relatively small such that the diameter D of the open end 2a is 1.0 mm or more and 2.0 mm or less or the depth d is 0.5 mm or more and 0.8 mm or less, the coating volume exceeds 5 mm 3 . When the phosphor-containing resin layer 12 is to be formed, the ratio of the thickness of the phosphor-containing resin layer 12 to the depth of the recess 2 (including the portion formed in a convex shape beyond the horizontal plane of the opening end 2a) When the phosphor-containing resin is applied or cured, the phosphor-containing resin whose viscosity has been reduced by heating may overflow from the recess 2.

なお、蛍光体含有樹脂層12は、通常、凹部2の底面2cから開口端2aの水平面まで形成されるため、そのときの塗布体積が上記したような範囲内にあればよいが、蛍光体含有樹脂層12は、開口端2aの水平面を超えて凸状に形成されていてもよく、このような場合にはその水平面を超える凸状部分も含めた塗布体積が上記したような範囲内にあればよい。また、凹部2における塗布体積の下限値は必ずしも限定されるものではないが、塗布体積が少なくなりすぎると凹部内の蛍光体の量が少なくなり、5000K以下の色温度、例えば電球色等を得にくくなることから、1.5mm以上とすることが好ましく、2mm以上とすることがより好ましい。 Since the phosphor-containing resin layer 12 is usually formed from the bottom surface 2c of the recess 2 to the horizontal surface of the opening end 2a, the coating volume at that time may be in the range as described above. The resin layer 12 may be formed in a convex shape exceeding the horizontal plane of the opening end 2a. In such a case, the coating volume including the convex portion exceeding the horizontal plane is within the range as described above. That's fine. In addition, the lower limit value of the coating volume in the recess 2 is not necessarily limited, but if the coating volume is too small, the amount of phosphor in the recess is reduced, and a color temperature of 5000 K or less, such as a light bulb color, is obtained. Since it becomes difficult, it is preferable to set it as 1.5 mm < 3 > or more, and it is more preferable to set it as 2 mm < 3 > or more.

このようなLEDランプ1あるいはLEDランプ1を一体に練成したLEDモジュール20においては、各LEDランプ1に印加された電気エネルギーがLEDチップ10で青色光に変換され、この青色光により黄色系蛍光体や赤色蛍光体が励起されて黄色光ないし橙色光や赤色光が発せられ、LEDチップ10から発せられる青色光と黄色系蛍光体から発光される黄色光ないし橙色光、赤色光との混色により、白色光が得られる。   In the LED lamp 1 or the LED module 20 in which the LED lamps 1 are integrally formed, electric energy applied to each LED lamp 1 is converted into blue light by the LED chip 10, and yellow fluorescent light is converted by the blue light. The body or red phosphor is excited to emit yellow light or orange light or red light, and the blue light emitted from the LED chip 10 is mixed with yellow light, orange light or red light emitted from the yellow phosphor. White light is obtained.

本発明では、凹部2の開口端2aの直径Dを2.0mm以下あるいは深さdを0.8mm以下とし、その大きさを一般的なものに比べて小さめに設定することにより、LEDチップ10から発せられる光と蛍光体から発せられる光との光路差を少なくし、角度色差を低減させることができる。   In the present invention, the diameter D of the opening end 2a of the recess 2 is set to 2.0 mm or less or the depth d is set to 0.8 mm or less, and the size thereof is set to be smaller than that of a general one. The optical path difference between the light emitted from the phosphor and the light emitted from the phosphor can be reduced, and the angular color difference can be reduced.

そして、このような小さめの凹部2を有するものについては、一般にその凹部2内の容積が少なくなるため、蛍光体の量も少なくなり、特に黄色系蛍光体に加えて含有させる赤色蛍光体の量が制限されるため、5000K以下の色温度、例えば電球色等を得にくくなる。   And about what has such a small recessed part 2, since the volume in the recessed part 2 generally becomes small, the quantity of fluorescent substance also decreases, and especially the quantity of the red fluorescent substance contained in addition to a yellowish fluorescent substance Therefore, it becomes difficult to obtain a color temperature of 5000 K or less, such as a light bulb color.

しかし、本発明では、凹部2の内面である内側側面2bおよび内側底面2cの少なくとも一部にLEDチップ10からの青色光に相当する波長460nmの光の反射率が低く、蛍光体からの黄色系発光に相当する波長540nmの光の反射率が高い反射層8を設けることで、青色光に比較して黄色光ないし橙色光、さらには赤色光を多くすることができ、赤色蛍光体の含有量が少ない場合であっても5000K以下の色温度、例えば電球色等を得やすくなる。また、赤色蛍光体の含有量を少なくすることで、発光効率に優れたものとすることもできる。   However, in the present invention, the reflectance of light having a wavelength of 460 nm corresponding to the blue light from the LED chip 10 is low on at least a part of the inner side surface 2b and the inner bottom surface 2c, which are the inner surfaces of the concave portion 2, and the yellow color from the phosphor. By providing the reflective layer 8 having a high reflectance of light having a wavelength of 540 nm corresponding to light emission, yellow light or orange light and further red light can be increased compared to blue light, and the content of the red phosphor Even when there is little, it becomes easy to obtain color temperature of 5000K or less, for example, a light bulb color. Moreover, it can also be made excellent in luminous efficiency by reducing content of a red fluorescent substance.

従って、本発明によれば、凹部2を比較的小さめのものとすることで角度色差を低減することができ、さらにこのようなものについて従来は得にくかった5000K以下の色温度、例えば電球色等を得ることについても特定の反射特性を有する反射層8を設けることで容易となり、さらに発光効率にも優れた発光装置とすることができる。   Therefore, according to the present invention, the angular color difference can be reduced by making the concave portion 2 relatively small. Further, it has been difficult to obtain a color temperature of 5000 K or less, such as a light bulb color. Can be easily obtained by providing the reflective layer 8 having specific reflection characteristics, and a light emitting device having excellent luminous efficiency can be obtained.

以上、本発明の発光装置についてLEDランプ1およびこのようなLEDランプ1を一体に練成してなるLEDモジュール20を例に挙げて説明したが、本発明の発光装置は必ずしもこのようなものに限定されるものではなく、本発明の趣旨に反しない限度において、かつ、必要に応じて、適宜その構造や材質等を変更することができる。   As described above, the light emitting device of the present invention has been described by taking the LED lamp 1 and the LED module 20 formed integrally with the LED lamp 1 as an example. However, the light emitting device of the present invention is not necessarily such. It is not limited, and the structure, material, and the like can be appropriately changed as necessary without departing from the spirit of the present invention.

以下、本発明について実施例を参照して詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to examples.

(実施例1)
開口端2aの直径Dが1.5mm、深さdが1.0mmである凹部2を有する基体3を用意し、その凹部2の内面(内側側面2bおよび内側底面2c)にメッキ法によりAuメッキ層(反射層8)を形成した。さらに、凹部2の内側底面2cに窒化ガリウム(GaN)系半導体からなる青色光を発光するLEDチップ10を搭載し、黄色系蛍光体および赤色蛍光体を含有する蛍光体含有樹脂を塗布体積1.5mmとなるように塗布して蛍光体含有樹脂層12を形成し、図1に示すような構造のLEDランプ1を製造した。
Example 1
A base body 3 having a recess 2 having a diameter D of 1.5 mm at the open end 2a and a depth d of 1.0 mm is prepared, and the inner surface (inner side surface 2b and inner bottom surface 2c) of the recess 2 is plated with Au by plating. A layer (reflection layer 8) was formed. Further, an LED chip 10 that emits blue light made of a gallium nitride (GaN) -based semiconductor is mounted on the inner bottom surface 2c of the recess 2, and a phosphor-containing resin containing a yellow phosphor and a red phosphor is applied in a volume of 1. The phosphor-containing resin layer 12 was formed by coating so as to be 5 mm 3, and the LED lamp 1 having a structure as shown in FIG. 1 was manufactured.

なお、蛍光体含有樹脂は、シリコーン樹脂中に黄色系蛍光体として主波長が540nmのYAG蛍光体および赤色蛍光体として主波長が650nmの赤色発光の蛍光体を分散させたものであり、蛍光体含有樹脂全体における黄色系蛍光体の含有量は10重量%、赤色蛍光体の含有量は3重量%としたものである。   The phosphor-containing resin is obtained by dispersing a YAG phosphor having a dominant wavelength of 540 nm as a yellow phosphor and a red-emitting phosphor having a dominant wavelength of 650 nm as a red phosphor in a silicone resin. The content of the yellow phosphor in the entire resin contained is 10% by weight, and the content of the red phosphor is 3% by weight.

(比較例1)
Auメッキ層の代わりにNiメッキ層を形成したこと以外は、実施例1と同様にしてLEDランプを製造した。
(Comparative Example 1)
An LED lamp was manufactured in the same manner as in Example 1 except that a Ni plating layer was formed instead of the Au plating layer.

(実施例2)
開口端2aの直径Dが3.0mm、深さdが0.7mmである凹部2を有する基体3を用意し、その凹部2の内面(内側側面2bおよび内側底面2c)にメッキ法によりAuメッキ層(反射層8)を形成し、黄色系蛍光体および赤色蛍光体を含有する蛍光体含有樹脂を塗布体積4.2mmとなるように塗布して蛍光体含有樹脂層12を形成したこと以外は実施例1と同様にして、図1に示すようなLEDランプ1を製造した。また、蛍光体含有樹脂層12の形成に用いた蛍光体含有樹脂についても、実施例1で用いた蛍光体含有樹脂と同様の組成のものとした。
(Example 2)
A base 3 having a recess 2 with a diameter D of the open end 2a of 3.0 mm and a depth d of 0.7 mm is prepared, and the inner surface (the inner side surface 2b and the inner bottom surface 2c) of the recess 2 is plated with Au by plating. Except that the phosphor (resin layer 8) is formed, and the phosphor-containing resin layer 12 is formed by applying a phosphor-containing resin containing a yellow phosphor and a red phosphor so as to have a coating volume of 4.2 mm 3. Produced the LED lamp 1 as shown in FIG. Further, the phosphor-containing resin used for forming the phosphor-containing resin layer 12 was also of the same composition as the phosphor-containing resin used in Example 1.

(比較例2)
Auメッキ層の代わりにNiメッキ層を形成したこと以外は、実施例2と同様にしてLEDランプを製造した。
(Comparative Example 2)
An LED lamp was manufactured in the same manner as in Example 2 except that a Ni plating layer was formed instead of the Au plating layer.

次に、実施例1、2、比較例1、2のLEDランプ1について、観察角度が50°、70°のときの角度色差(Δuv)を算出すると共に、色温度の測定を行った。結果を表3に示す。   Next, for the LED lamps 1 of Examples 1 and 2 and Comparative Examples 1 and 2, the angle color difference (Δuv) when the observation angles were 50 ° and 70 ° was calculated, and the color temperature was measured. The results are shown in Table 3.

Figure 2007234817
Figure 2007234817

表3から明らかなように、凹部2の開口端2aの直径Dまたは深さdを所定の範囲内にすると共に、凹部2の内面にAuメッキ層を形成した実施例1および2のLEDランプ1については、凹部2の内面にNiメッキ層を形成した比較例1および比較例2のLEDランプ1と比較して、角度色差(Δuv)を同程度あるいはそれ以下とすることができると共に、色温度も低くすることができ、特に3000K程度の色温度を容易に得られることがわかる。   As is apparent from Table 3, the LED lamps 1 of Examples 1 and 2 in which the diameter D or depth d of the open end 2a of the recess 2 is within a predetermined range and an Au plating layer is formed on the inner surface of the recess 2 As compared with the LED lamps 1 of Comparative Example 1 and Comparative Example 2 in which the Ni plating layer is formed on the inner surface of the recess 2, the angle color difference (Δuv) can be made comparable or less and the color temperature It can be seen that a color temperature of about 3000K can be easily obtained.

本発明の発光装置の一例であるLEDランプを示す断面図。Sectional drawing which shows the LED lamp which is an example of the light-emitting device of this invention. 図1に示すLEDランプの複数個をマトリックス状に配置し、LEDモジュールとした本発明の発光装置の一例を示す平面図。The top view which shows an example of the light-emitting device of this invention which has arranged several LED lamps shown in FIG. 1 in the matrix form, and was set as the LED module. 図2に示すLEDモジュールのA−A´線断面図。AA 'line sectional drawing of the LED module shown in FIG. Au(金)メッキ層の可視光反射率とNi(ニッケル)メッキ層の可視光反射率とを比較して示したグラフ。The graph which compared and showed the visible light reflectance of Au (gold) plating layer, and the visible light reflectance of Ni (nickel) plating layer.

符号の説明Explanation of symbols

1…LEDランプ、2…凹部(2a…開口端、2b…内側側面、2c…内側底面)、3…基体、4…基板、5…電気絶縁層、6…回路パターン、7…フレーム、8…反射層、9…電気絶縁体部、10…LEDチップ、11…ボンディングワイヤ、12…蛍光体含有樹脂層、20…LEDモジュール   DESCRIPTION OF SYMBOLS 1 ... LED lamp, 2 ... Recessed part (2a ... Open end, 2b ... Inner side surface, 2c ... Inner bottom surface), 3 ... Base | substrate, 4 ... Substrate, 5 ... Electrical insulation layer, 6 ... Circuit pattern, 7 ... Frame, 8 ... Reflective layer, 9 ... electric insulator, 10 ... LED chip, 11 ... bonding wire, 12 ... phosphor-containing resin layer, 20 ... LED module

Claims (5)

開口端の直径が1.0mm以上2.0mm以下の凹部を備える基体と;
前記凹部内に配置された青色光を発する発光素子と;
前記発光素子を覆うように前記凹部内に形成され、前記発光素子から発せられた青色光により励起されて少なくとも黄色光を発する蛍光体を少なくとも含有する樹脂層であって、前記凹部における塗布体積が5mm以下である蛍光体含有樹脂層と;
前記凹部の内面の少なくとも一部に形成され、波長460nmの光の反射率が50%以下、波長540nmの光の反射率が70%以上、かつ、前記波長460nmの光の反射率に対する前記波長540nmの光の反射率の比が1.3以上2.5以下である反射層と;
を具備することを特徴とする発光装置。
A substrate provided with a recess having an opening end diameter of 1.0 mm or more and 2.0 mm or less;
A light emitting element emitting blue light disposed in the recess;
A resin layer that is formed in the recess so as to cover the light emitting element and contains at least a phosphor that emits at least yellow light when excited by the blue light emitted from the light emitting element, and the coating volume in the recess is A phosphor-containing resin layer that is 5 mm 3 or less;
Formed on at least a part of the inner surface of the recess, the reflectance of light with a wavelength of 460 nm is 50% or less, the reflectance of light with a wavelength of 540 nm is 70% or more, and the wavelength of 540 nm with respect to the reflectance of light with a wavelength of 460 nm A reflective layer having a light reflectance ratio of 1.3 to 2.5;
A light-emitting device comprising:
深さが0.5mm以上0.8mm以下の凹部を備える基体と;
前記凹部内に配置された青色光を発する発光素子と;
前記発光素子を覆うように前記凹部内に形成され、前記発光素子から発せられた青色光により励起されて少なくとも黄色光を発する蛍光体を少なくとも含有する樹脂層であって、前記凹部における塗布体積が5mm以下である蛍光体含有樹脂層と;
前記凹部の内面の少なくとも一部に形成され、波長460nmの光の反射率が50%以下、波長540nmの光の反射率が70%以上、かつ、前記波長460nmの光の反射率に対する前記波長540nmの光の反射率の比が1.3以上2.5以下である反射層と;
を具備することを特徴とする発光装置。
A substrate provided with a recess having a depth of 0.5 mm or more and 0.8 mm or less;
A light emitting element emitting blue light disposed in the recess;
A resin layer that is formed in the recess so as to cover the light emitting element and contains at least a phosphor that emits at least yellow light when excited by the blue light emitted from the light emitting element, and the coating volume in the recess is A phosphor-containing resin layer that is 5 mm 3 or less;
Formed on at least a part of the inner surface of the recess, the reflectance of light with a wavelength of 460 nm is 50% or less, the reflectance of light with a wavelength of 540 nm is 70% or more, and the wavelength of 540 nm with respect to the reflectance of light with a wavelength of 460 nm A reflective layer having a light reflectance ratio of 1.3 to 2.5;
A light-emitting device comprising:
前記反射層は金からなるものであることを特徴とする請求項1または2記載の発光装置。   The light emitting device according to claim 1, wherein the reflective layer is made of gold. 観察角度が0度を超え70度以下における角度色差(Δuv)が0.012以下であることを特徴とする請求項1乃至3のいずれか1項記載の発光装置。   4. The light emitting device according to claim 1, wherein an angle color difference (Δuv) when the observation angle is greater than 0 degree and equal to or less than 70 degrees is 0.012 or less. 5. 色温度が5000K以下であることを特徴とする請求項1乃至4のいずれか1項記載の発光装置。   The light emitting device according to claim 1, wherein the color temperature is 5000 K or less.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009037848A1 (en) * 2007-09-21 2009-03-26 Kabushiki Kaisha Toshiba White light-emitting lamp for illumination and illuminating device using the same
CN102593307A (en) * 2011-01-07 2012-07-18 钰桥半导体股份有限公司 Light emitting diode optical reflection structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009037848A1 (en) * 2007-09-21 2009-03-26 Kabushiki Kaisha Toshiba White light-emitting lamp for illumination and illuminating device using the same
JPWO2009037848A1 (en) * 2007-09-21 2011-01-06 株式会社東芝 White light-emitting lamp for lighting and lighting fixture using the same
US8426882B2 (en) 2007-09-21 2013-04-23 Kabushiki Kaisha Toshiba White light-emitting lamp for illumination and illuminating device using the same
CN102593307A (en) * 2011-01-07 2012-07-18 钰桥半导体股份有限公司 Light emitting diode optical reflection structure

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