JP2007228021A - High frequency circuit component and communication apparatus using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency circuit component whose number of components is small and that can be downsized with respect to a circuit shared between a wireless LAN and the Bluetooth, and to provide a communication apparatus employing the same. <P>SOLUTION: The high frequency circuit component is provided, wherein a band pass filter circuit and a switch circuit are connected to a first antenna terminal, the switch circuit switches among a reception terminal for a first communication system, a transmission terminal for the first communication system, and a transmission reception terminal for a third communication system, a band pass filter circuit and a switch circuit are connected to a second antenna terminal, and the switch circuit switches between a reception terminal for a second communication system and a transmission terminal for the second communication system, and a high frequency amplifier circuit is provided between each transmission terminal and each switch circuit. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a wireless communication apparatus that performs wireless transmission between electronic appliances, and relates to a high-frequency circuit component that can be shared by at least three communication systems and a communication apparatus using the same.

The 2.4 GHz ISM (Industrial, Scientific and Medical) band is a wireless LAN that conforms to the IEEE 802.11 standard, such as for DSSS (Direct Sequence Spread Spectrum) wireless communications. It is used for (WLAN) communication. Using the same 2.4 GHz ISM band as such wireless LAN (WLAN), connection with related electronic devices can be realized without using a cable, and this is a very convenient technology. Bluetooth ^™ ) has been proposed.

The main wireless LAN standards that use the 2.4 GHz ISM band include IEEE 802.11b and IEEE 802.11g. IEEE 802.11b is a DSSS (Direct Sequence Spread Spectrum) system that supports high-speed communication at 5.5 Mbps and 11 Mbps. IEEE802.11g supports high-speed data communication up to 54 Mbps using an OFDM (Orthogonal Frequency Division Multiples) modulation scheme.

Bluetooth uses the 2.4 GHz ISM frequency band divided into a plurality of radio channels, and further divides each radio channel into unit times (1/1600 seconds) as time slots, and uses the radio channel as a time slot. A frequency hopping method with excellent noise resistance that is switched for each slot is adopted.

Further, IEEE 802.11a is a standard of 5 GHz band wireless LAN, which supports high-speed data communication of up to 54 Mbps using an OFDM (Orthogonal Frequency Division Multiples) modulation method. is there.

The wireless LAN is assumed to be a small group whose use is in the range of a distance of about 50 to 100 m, and the data transmission speed is as fast as several M to several tens Mbps, and therefore consumes about 100 mW of power. However, Bluetooth is supposed to be used in a relatively small area such as in the same premises and in the same building, and the area where radio waves reach is about 10 m, and the transmission speed is 2 Mbps even at high speed. It is designed for power saving of about 10mW.
As described above, since the transmission speed, the distance that can be transmitted, and the like are different between the wireless LAN and Bluetooth, they can be installed in one communication device at the same time, and can be used selectively according to the purpose.

An example of a wireless LAN compatible with dual band is described in Patent Document 1. FIG. 7 of this patent document describes the relationship between a switch module, four antennas for transmitting and receiving signals, and two transmission / reception circuits as the prior art. In other words, two antennas for transmitting and receiving signals in the IEEE 802.11a frequency band and two antennas for transmitting and receiving signals in the IEEE 802.11b frequency band are provided separately, and the circuit configuration is divided in each frequency band. It corresponds to the communication in.

Patent Document 2 describes an example of a Bluetooth RF circuit. In FIG. 8 of Patent Document 2, a band-pass filter is disposed in the subsequent stage of the antenna, and in the subsequent stage, a high-frequency switch that switches connection between the transmission circuit and the antenna and connection between the reception circuit and the antenna, A balun transformer disposed between the transmission circuits and a balun transformer disposed between the high-frequency switch and the reception circuit are described.

JP 2005-73086 A JP 2003-60409 A

In the circuit shown in FIG. 7 of Patent Document 1, since four antennas are used, it has been pointed out that it is difficult to reduce the outer shape of the electronic device. An example in which two antennas are used and a duplexer is inserted between the antenna and the switch is shown in FIG. However, since a new duplexer is provided for this example, the number of parts increases, making it difficult to cope with further downsizing, and power consumption increases due to the insertion loss of the duplexer. There is a problem that. Furthermore, in order to correspond to the three systems, a switch is newly added, and, like the installation of the duplexer, the number of parts increases and the mounting area increases, and the size, thickness and weight cannot be reduced. The problem of isolation of a duplexer has also been pointed out.

Further, in the circuit shown in Patent Document 2, the GaAs switch has a wide band insertion loss, the attenuation amount outside the band is small, and the band-pass filter is required to have a large attenuation amount outside the band. For this reason, it has been pointed out that there has been a limit to miniaturization because it is necessary to increase the number of circuit elements constituting the band-pass filter, the insertion loss is deteriorated, and the shape is increased. In addition, further reduction in power consumption has been desired.

In view of the above-described problems, the present invention relates to a circuit that can share a wireless LAN and Bluetooth, and relates to a high-frequency circuit component that has a small number of components, can be reduced in size, and has low power consumption, and a communication device using the same. The purpose is to provide.

The present invention includes first and second antenna terminals, a transmission terminal for a first communication system, a reception terminal for a first communication system, a transmission terminal for a second communication system, a reception terminal for a second communication system, A high-frequency circuit component having a transmission / reception terminal for three communication systems, wherein the transmission terminal for the first communication system, the reception terminal for the first communication system, or the transmission / reception terminal for the third communication system A first switch circuit for switching the connection with the first antenna terminal, and a second switch for switching the connection between the transmission terminal for the second communication system or the reception terminal for the second communication system and the second antenna terminal. A first bandpass filter circuit provided between the first switch circuit and the first antenna terminal, the second switch circuit, and the second amplifier circuit. A second band-pass filter circuit provided between the tena terminal, a first high-frequency amplifier circuit provided between the first switch circuit and the transmission terminal for the first communication system, and the second And a second high-frequency amplifier circuit provided between the switch circuit and the transmission terminal for the second communication system, and provided between the first high-frequency amplifier circuit and the transmission terminal for the first communication system. A high-frequency circuit component having a third band-pass filter circuit.

In the present invention, the first switch circuit may be a combination of two switch circuits.
In the present invention, it is preferable that the second band pass filter circuit is a combination of a high pass filter circuit and a low pass filter circuit.

In the present invention, it is preferable to provide one drive power supply terminal that shares the drive power supply terminal for the first high-frequency amplifier circuit and the drive power supply terminal for the second high-frequency amplifier circuit. Also, in the present invention, a single detection circuit driving power supply terminal is provided which shares the detection circuit driving power supply terminal for the first high frequency amplification circuit and the detection circuit driving power supply terminal for the second high frequency amplification circuit. Is preferred.

Further, in the present invention, at least one inductance element and / or capacitance element configured by an electrode pattern of the conductive material is mounted on the multilayer body in a multilayer body in which a ceramic dielectric material and a conductive material are laminated and integrated. It is preferable that the high-frequency circuit component is configured by using at least one semiconductor element.

Moreover, this invention is a communication apparatus using the above-mentioned high frequency circuit component.

ADVANTAGE OF THE INVENTION According to this invention, the high frequency circuit component which can respond to three communication systems and can select the connection of an antenna and each transmission / reception circuit suitably can be obtained. Moreover, it is possible to communicate two communication systems simultaneously, and it is possible to obtain an integrated small-sized high-frequency circuit component with low power consumption. By using the high-frequency circuit component of the present invention, it is possible to make the communication device highly functional, downsized, and reduce the number of components.

Embodiments of the present invention will be described with reference to the drawings. In this embodiment, a 2.4 GHz band wireless LAN system can be used as the first communication system, a 5 GHz band wireless LAN system can be used as the second communication system, and a Bluetooth system can be used as the third communication system. Then, the example using it is demonstrated. Of course, it is possible to change to another system. The present invention is not limited to the embodiments described below.

FIG. 1 is a circuit block diagram of an embodiment according to the present invention. This embodiment has two antenna terminals 2A and 5A, and the first band-pass filter circuit 1 is connected to the first antenna terminal 2A. The first band-pass filter circuit 1 passes signals at frequencies used by the first communication system and the third communication system, and signals at frequencies used by other wireless systems (for example, mobile phones and GPS) on the low frequency side. The high frequency side has a function of attenuating the harmonic frequency and the signal of the frequency used by another wireless system (for example, 5 GHz wireless LAN system or WiMAX).
A first switch circuit 11 is connected to the first bandpass filter circuit 1. The first switch circuit is a two-stage switch circuit. The first-stage switch circuit 3 switches the receiving terminal 2R and the port P4 for the first communication system, and the second-stage switch circuit 4 uses the port P5. And the transmission / reception terminal BLT for the third communication system. Control power terminals V1 and V2 for the first-stage switch circuit 3 and control power terminals V3 and V4 for the second-stage switch circuit are provided.
A high frequency amplifier circuit 6 is connected to the port P5. A third band-pass filter circuit 8 is connected to the high-frequency amplifier circuit 6, and is further connected to a transmission terminal 2T for the first communication system. The third band-pass filter circuit 8 passes a signal having a use frequency of the first communication system and attenuates a noise signal input from the transmission terminal 2T for the first communication system. The high-frequency amplifier circuit 6 has a built-in detection circuit for outputting a voltage corresponding to the output power, and is provided with a detection terminal 2Pdet and a detection circuit drive power supply terminal Vdet. The high frequency amplifier circuit 6 is provided with a drive power supply terminal Vcc and a control power supply terminal Vb2.
In addition, an inductance element Lag whose one end is grounded is provided between the first band-pass filter circuit 1 and the first antenna terminal 2A. The inductance element Lag is for protecting the switch circuit and the high-frequency amplifier circuit from a surge such as static electricity applied to the antenna terminal 2A.

A second band pass filter circuit 2 is connected to the second antenna terminal 5A. The second band pass filter circuit 2 passes a signal of a frequency used in the second communication system, and on the low frequency side, another wireless system (for example, a cellular phone, GPS, a wireless LAN system of 2.4 GHz band, a Bluetooth system, It has the function of attenuating the signal of the frequency used, such as WiMAX, and the signal of the harmonic frequency on the high frequency side. A second switch circuit 5 is connected to the second bandpass filter circuit 2. The second switch circuit 5 switches between the receiving terminal 5R and the port P3 for the second communication system. Control power terminals V5 and V6 of the switch circuit 5 are provided.
A second high frequency amplifier circuit 7 is connected to the port P3. The second high-frequency amplifier circuit 7 is connected to a transmission terminal 5T for the second communication system. The high-frequency amplifier circuit 7 has a built-in detection circuit for outputting a voltage corresponding to the output power, and is provided with a detection terminal 5Pdet and a power supply terminal Vdet for driving the detection circuit. The high-frequency amplifier circuit 7 is provided with a drive power supply terminal Vcc and a control power supply terminal Vb5. The driving power supply terminal Vcc and the detection circuit driving power supply terminal Vdet are shared by the two high-frequency amplifier circuits 6 and 7 through transmission lines lca10 and lpd1, respectively. The high frequency amplifier circuits 6 and 7 are connected via a driving voltage supply line lca10, and both are electrically connected to the driving power supply terminal Vcc. At this time, in order to obtain isolation between the high-frequency amplifier circuits 6 and 7, the electrical length of the driving voltage supply transmission line lca10 is preferably set to λ / 8 to λ / 4 in a frequency band in which isolation is desired to be increased. . For example, when the first communication system is in the 2.4 GHz band and the second communication system is in the 5 GHz band, the electrical length of the driving voltage supply transmission line lca10 is approximately λ / 8 in the 2.4 GHz band and the 5 GHz band. Λ / 4. Similarly, the electrical length of the detection circuit driving voltage supply transmission line lpd1 is desirably λ / 8 to λ / 4. By doing so, the drive power supply terminal Vcc and the detection circuit drive power supply terminal Vdet can be shared while maintaining the isolation between the high frequency amplifier circuits 6 and 7, and the number of terminals of the high frequency circuit components can be reduced. It becomes possible. In particular, when a high-frequency circuit component is configured as a laminated component as described later, the number of terminals is limited to some extent depending on the size of the component. To do.
An inductance element Laa having one end grounded is provided between the second bandpass filter circuit 2 and the second antenna terminal 5A. The inductance element Laa is for protecting the switch circuit and the high-frequency amplifier circuit from a surge such as static electricity applied to the antenna terminal 2A.

If the second band-pass filter circuit cannot secure the required attenuation, or if it is necessary to attenuate the noise signal input from the transmission terminal 5T for the second communication system, the second high-frequency amplifier 7 and A band pass filter or a high pass filter is disposed between the transmission terminals 5T for the second communication system.
When the transmission terminal 2T for the first communication system, the reception terminal 2R, the transmission terminal 5T for the second communication system, the reception terminal 5R, and the transmission / reception terminal BLT for the third communication system need to be balanced output, A balanced-unbalanced conversion circuit may be arranged so as to be connected to each terminal.
When the detection circuit built in the first high frequency amplifier circuit 6 or the second high frequency amplifier circuit 7 has insufficient sensitivity to the output voltage, output voltage, and output side impedance change of the high frequency amplifier circuit, A detection circuit mainly composed of a directional coupler and a Schottky diode may be arranged between the output terminal of the high-frequency amplifier circuit and the switch circuit.
An antenna dedicated to 2.4 GHz band can be connected to the antenna terminal 2A, and an antenna dedicated to 5 GHz band can be connected to the antenna terminal 5A. Therefore, it is possible to use an antenna with better characteristics than to use an antenna that can be shared between 2.4 GHz and 5 GHz, and achieve low power consumption.
In addition, the isolation between the shared circuit for the first communication system and the third communication system using the 2.4 GHz band and the circuit for the second communication system using the 5 GHz band can be increased. It is possible to prevent the system from malfunctioning.

FIG. 2 shows an equivalent circuit diagram of the first bandpass filter circuit 1. The first band-pass filter circuit 1 includes capacitance elements cpg1,3,14, cpg2,4,15, cpg5, cpg6, cpg7, cpg8,12, cpg9,13 and transmission lines lpg2,4, lpg3,5. The transmission lines lpg2, 4 and the transmission lines lpg3, 5 are magnetically coupled. These cpgs 1, 3, and 14 are matched with the reference numerals of electrodes formed in a multilayer ceramic substrate, which will be described later, and mean that they are configured using the electrode patterns cpg1, cpg3, and cpg14. The same applies to cpg2,4,15, cpg8,12, cpg9,13, lpg2,4, and lpg3,5. In the following, similar expressions have the same meaning.

FIG. 3 shows an equivalent circuit diagram of the second bandpass filter circuit 2. The second band-pass filter circuit 2 includes capacitance elements cpa1, cpa2, cpa4, cpa5, cpa6, cpa9 and transmission lines lpa2,3, lpa4,5, lpa7,8. The high-pass filter circuit is composed of the capacitance elements cpa4, cpa5, cpa6, cpa9 and the transmission lines lpa4,5, lpa7,8, and the low-pass filter circuit is composed of the capacitance elements cpa1, cpa2 and the transmission lines lpa2,3. The circuit and the low-pass filter circuit constitute a band-pass filter circuit. In the general high-pass filter circuit, capacitance elements are arranged on the ground side of the transmission lines lpa4, 5 in the same manner as the transmission lines lpa7, 8, but in this embodiment, the transmission lines lpa4, 5 are directly grounded. As a result, the number of circuit elements can be reduced and a large attenuation characteristic can be obtained in a wide band. For this reason, at the time of transmission of the second communication system, it is possible to reduce interference with a system that uses a frequency lower than the frequency used by the second communication system, and to improve reception sensitivity at the time of reception of the second communication system. Can do.

FIG. 4 shows an equivalent circuit of the first-stage switch circuit 3 of the first switch circuit, and FIG. 5 shows an equivalent circuit of the second-stage switch circuit 4 of the first switch circuit. FIG. 6 shows an equivalent circuit of the second switch circuit 5. Each includes semiconductor elements I3, I4, and I5 and capacitance elements Crb, Ct, CBLT, and Cra that form a switch circuit, and includes control power supply terminals V1, V2, V3, V4, V5, and V6.

FIG. 7 is an equivalent circuit diagram of the high-frequency amplifier circuit 6. This high-frequency amplifier circuit 6 is used in the 2.4 GHz band so that it can control the output power of the input matching circuit, the power amplifier circuit composed of two stages of transistors, the voltage supply circuit for supplying a constant voltage, and the high-frequency amplifier circuit. The bias control circuit and the output matching circuit are configured. The power amplifying circuit portion uses a semiconductor element I6. In addition to the other semiconductor element I6, the capacitance element C1 and the transmission lines lig1,2, lig3,4,5 and the output matching circuit have a capacitance for the input matching circuit. Elements C3, cog1 and transmission lines log3-6, log7,8, capacitance elements C6, C9, C30 for voltage supply circuit and transmission lines lcg3-10, lcg12-17, lcg17, capacitance elements C4, C5 for bias control circuit The detection circuit includes a capacitance element Cdb and a resistance element Rdb, and includes a drive power supply terminal Vcc, a control power supply terminal Vb2, a detection circuit drive power supply terminal Vdet, and a detection terminal 2Pdet.
Here, the transmission line log3-6 is combined with the sign of the electrode formed in the multilayer ceramic substrate described later, and means that it is configured using the electrode pattern log3, log4, log5, and log6. Yes. The same applies to lcg3-10 and lcg12-17. In the following, similar expressions have the same meaning.

FIG. 8 is an equivalent circuit diagram of the high-frequency amplifier circuit 7. This high-frequency amplifier circuit 7 is used in the 5 GHz band, and is configured to control the output power of an input matching circuit, a power amplifier circuit composed of three stages of transistors, a voltage supply circuit for supplying a constant voltage, and a high-frequency amplifier circuit. And a bias control circuit and an output matching circuit. The power amplifying circuit portion uses the semiconductor element I7, and in addition to the other semiconductor element I7, for the input matching circuit, capacitance elements cia1, Cta and transmission lines lia3-6, lia11-14, lia8,9, lia10,16 17, resistor element R2, capacitance element C14 and transmission lines loa1,9, loa3-8 for output matching circuit, capacitance element cca1,4, cca2, cca3, C40, C19, C17 and transmission line for voltage supply circuit lca1, lca2-4, lca5, lca7, lca8, capacitance control element C15, C20 for bias control circuit, capacitance element Cda for detection circuit, resistance element Rda, drive power supply terminal Vcc, control power supply terminal Vb5 And a detection circuit driving power supply terminal Vdet and a detection terminal 5Pdet.

FIG. 9 is an equivalent circuit diagram of the third bandpass filter circuit 8. The third band pass filter circuit 8 is composed of capacitance elements cpi1,3,14, cpi2,4,15, cpi5, cpi6, cpi7, cpi8,12, cpi9,13 and transmission lines lpi2,4, lpi1,3. The transmission lines lpi2,4 and the transmission lines lpi1,3 are magnetically coupled.
In addition, although each transmission line may be called an inductance element below, it can be read as consent.

The case where the high-frequency circuit component according to the present invention is configured as a laminated component (a component using a ceramic multilayer substrate) will be described. FIG. 10 is an external perspective view in which the high-frequency circuit component 10 of the present invention is configured using a laminated substrate 100. 11, 12, and 13 show the configuration of each layer in the multilayer substrate 100. FIG. 11 shows the first to sixth layers from the top, and FIG. 12 shows the seventh to twelfth layers. FIG. 13 shows the 13th to 16th layers and the back surface.
On the plurality of land electrodes on the top surface of the multilayer substrate 100, semiconductor elements I3, I4, I5 of the switch circuit and semiconductor elements I6, I7 of the high frequency amplifier circuit are mounted in a bare chip state, and chip capacitors C5, C6, C30, C9, C4, C1, Cdb, C3, CBLT, Crb, CT, Cda, C14, Cta, C40, Cra, C15, C17, C19, C20, chip inductors Lag, Laa, and chip resistors R2, Rda, Rdb are mounted Has been.
The back surface of the bare chip of the semiconductor element is bonded to the land electrode on the upper surface of the multilayer substrate 100 with Ag paste or solder as a conductive adhesive. Further, the circuit of the semiconductor element and the land electrode to be connected on the upper surface of the multilayer substrate 100 are connected by a wire. This wire is, for example, a gold wire having a thickness of 25 μm. The land electrode on the upper surface of the multilayer substrate 100 is connected to a connection line and circuit elements in the multilayer substrate 100 through via holes. The chip capacitor, chip inductor, and chip resistor mounted on the upper surface of the multilayer substrate 100 may be formed inside the multilayer substrate 100. In addition, either a capacitance element or a transmission line formed inside the multilayer substrate 100 may be mounted on the multilayer substrate. These can be changed as appropriate.

In addition, a metal case can be attached on the laminated substrate 100, and resin sealing or tube sealing can also be performed. By configuring the high-frequency circuit component as a laminated substrate in this way, the size can be reduced, and the number of components used as a communication device can be reduced. Of course, it is also possible to combine the RFIC or baseband IC constituting the transmission / reception circuit section with the laminated substrate.

As shown in FIGS. 11 to 13, land electrodes for component mounting are formed on the green sheet on the top (first layer) of the multilayer substrate 100. On the second green sheet, a ground electrode e18 and an inductance element electrode lia10 are formed. On the third green sheet, electrodes cpi15, cpi14, cpg14, cpg15 for capacitance elements, electrodes log2, lia9 for inductance elements, and ground electrodes e12, e13, e14, e15 are formed. On the fourth green sheet, electrodes cpi12, cpi13, cpg12, cpg13 for capacitance elements, electrodes lpg1, loa9, log3, lia8 for inductance elements and ground electrodes e10, e11 are formed. The fifth layer green sheet is formed with electrodes cpi10, cpi11, cpg10, cpg11 for capacitance elements, loa1, loa13, lia16, lpa1, lpg4, lcc10, lig3 and ground electrodes e8, e9 for inductance elements. Yes. The sixth layer green sheet has electrodes cpi8, cia1, cpg8, cpg9, cpi9 for capacitance elements, loa4, lia3, lia17, lpa2, log5, lcg9, lcg17, and ground electrodes e19, e20 for inductance elements. Is formed.

On the seventh green sheet, electrodes cia2 and cpa4 for capacitance elements and electrodes lcg8, lcg16, lia4, lca8, loa5, and log6 for inductance elements are formed. On the 8th layer green sheet, electrodes cpa5 for capacitance elements and electrodes lpg2, lpg3, lcg7, lcg8, lcg15, lpi3, lpi4, loa6, lia5, lca4, lca5, lca7 for inductance elements are formed. . On the 9th green sheet, electrodes cpa8 for capacitance elements and electrodes lpi1, lpi2, lcg6, lcg14, log7, lpg4, lpg5, lca3, loa7, lia6 for inductance elements are formed. On the 10th green sheet, electrodes cpa6 for capacitance elements and electrodes lcg5, lcg13, loa8, lia1, lca2, and lpa4 for inductance elements are formed. On the 11th green sheet, electrodes cpi7 and cpg7 for capacitance elements, electrodes lcg4, lcg12, lia12, lig1, lpa5 and lpa7 for inductance elements, and a ground electrode e6 are formed. On the 12th green sheet, electrodes cpi5, cpi6, cpg5, cpg6 for capacitance elements, electrodes lig2, lia13, lpa8, lcg3 for inductance elements and a ground electrode e5 are formed.

On the 13th green sheet, electrodes cpi3, cpi4, cca1, cpa1, cpa2, cpg3, cpg4 for capacitance elements, electrode lca6 for inductance elements, and transmission line lpd1 are formed. A ground electrode e2 is formed on the 14th green sheet. On the 15th green sheet, electrodes ccpi1, cpi2, cca2, cca3, cca4, cpa7, cpg1, cog1, cpg2, a transmission line lca10, and a ground electrode e2 for capacitance elements are formed. A ground electrode e1 is formed on the 16th (lowermost) green sheet. On the back surface of the green sheet 316, terminal electrodes for mounting on the circuit board are formed. The terminal electrodes have the same reference numerals as those in FIG. Note that GND is a terminal electrode of the ground electrode.
The line electrodes for the inductance elements, the capacitor electrodes for the capacitance elements, and the ground electrode are appropriately connected via via holes formed in the green sheet.

If the isolation between the input matching circuit, voltage supply circuit and output matching circuit of the high-frequency power amplifier circuits 6 and 7 is insufficient, the power amplifier may malfunction and oscillate. The layout of the planar ground electrode and the via hole connected to it is optimized so as to ensure. The electrodes that make up the bandpass filter circuits 1 and 2 connected to the antenna terminals should be placed as far as possible from the high-frequency power amplifier circuits 6 and 7 so that they are not easily affected by unwanted noise from the high-frequency power amplifier circuits 6 and 7. desirable.
Similarly, it is desirable to dispose the electrodes constituting the wireless LAN reception path and the Bluetooth transmission / reception path as far as possible from the high-frequency power amplifier circuits 6 and 7. As a result, unwanted noise interference from the high-frequency power amplifier circuits 6 and 7 is reduced, and reception sensitivity is improved.

The laminated substrate 100 is made of, for example, a ceramic dielectric material that can be sintered at a low temperature of 1000 ° C. or lower, and a conductive paste such as Ag or Cu having a low resistivity is printed on a green sheet having a thickness of 10 μm to 200 μm. It can be manufactured by forming a predetermined electrode pattern, appropriately laminating a plurality of green sheets, and sintering.
As the dielectric material, for example, Al, Si, Sr as a main component, Ti, Bi, Cu, Mn, Na, K as a subcomponent, Al, Si, Sr as a main component, Ca, Pb, A material containing Na and K as a multicomponent, a material containing Al, Mg, Si, and Gd, and a material containing Al, Si, Zr, and Mg are used, and a material having a dielectric constant of about 5 to 15 is used. In addition to the ceramic dielectric material, it is also possible to use a resin multilayer substrate or a multilayer substrate made of a composite material obtained by mixing a resin and ceramic dielectric powder. Further, the ceramic substrate is made of HTCC (high temperature co-fired ceramic) technology, the dielectric material is mainly Al2O3, and the transmission line is made of a metal conductor that can be sintered at a high temperature such as tungsten or molybdenum. You may do it.

In addition, thermal vias are provided from the top surface to the back surface of the laminated substrate 100 where the semiconductor element for the high frequency amplifier circuit is mounted. This is to improve heat dissipation. In order to suppress unnecessary noise radiation, a wide ground electrode is appropriately formed on the internal green sheet.
In the multilayer substrate 100, each circuit is three-dimensionally configured on the multilayer substrate. Here, the electrode pattern constituting each circuit is grounded by a ground electrode (a planar ground electrode or a via hole connected to the ground electrode) so as to prevent unnecessary electromagnetic interference with the electrode pattern constituting each other circuit. They are separated so as not to overlap each other when viewed in the stacking direction.

Terminal electrodes are formed on the back surface (mounting surface) of the multilayer substrate 100 as shown in FIG. On this back surface (mounting surface), a wide ground electrode GND is formed in the central portion, and each terminal electrode is formed in a circular shape around the periphery.
The terminal electrodes are arranged such that the transmission terminal electrode and the reception terminal electrode, the transmission terminal electrode and the antenna terminal electrode are not adjacent to each other, and the ground electrode GND or the control power supply terminal electrode is arranged therebetween.
Among these terminal electrodes, the antenna terminal electrodes 2A and 5A are arranged on one side of the laminated substrate, and on the side opposite to the one side, a 2.4 GHz band wireless LAN transmission terminal electrode 2T and reception terminal electrode 2R are provided. A transmitting terminal electrode 5T and a receiving terminal electrode 5R for 5 GHz band wireless LAN are arranged. As described above, by arranging the antenna terminal electrode and the transmission / reception terminal electrode on the opposite sides, mutual interference can be reduced.
In this embodiment, the terminal electrode is an LGA (Land Grid Array), but a BGA (Ball Grid Array) or the like can also be used.

It is a circuit block diagram of the high frequency circuit component of one Example which concerns on this invention. It is an equivalent circuit diagram of the 1st band pass filter circuit of one example concerning the present invention. It is an equivalent circuit schematic of the 2nd band pass filter circuit of one example concerning the present invention. It is an equivalent circuit of the switch circuit of the 1st stage of the 1st switch circuit of one Example which concerns on this invention. It is an equivalent circuit of the switch circuit of the 2nd stage of the 1st switch circuit of one Example which concerns on this invention. It is an equivalent circuit of the 2nd switch circuit of one Example which concerns on this invention. 1 is an equivalent circuit diagram of a first high-frequency amplifier circuit according to an embodiment of the present invention. It is an equivalent circuit schematic of the 2nd high frequency amplifier circuit of one Example concerning the present invention. It is an equivalent circuit schematic of the 3rd band pass filter circuit of one example concerning the present invention. 1 is an external perspective view in which a high-frequency circuit component 10 of one embodiment according to the present invention is configured using a laminated substrate 100. FIG. It is an expanded view which shows the electrode pattern of each layer in the multilayer substrate which comprises the high frequency circuit component by one Example of this invention. It is an expanded view which shows the electrode pattern of each layer in the multilayer substrate which comprises the high frequency circuit component by one Example of this invention. It is an expanded view which shows the electrode pattern of each layer in the multilayer substrate which comprises the high frequency circuit component by one Example of this invention.

Explanation of symbols

1: First band pass filter circuit 2: Second band pass filter circuit 3: First switch circuit of the first switch circuit 4: Second switch circuit of the first switch circuit 5: Second Switch circuits 6 and 7: high frequency amplifier circuit 8: third band pass filter circuit 10: high frequency circuit component 100: laminated substrate

Claims (7)

1st and 2nd antenna terminal, 1st communication system transmission terminal, 1st communication system reception terminal, 2nd communication system transmission terminal, 2nd communication system reception terminal, 3rd communication system use A high-frequency circuit component having a transmission / reception terminal of
A first switch circuit for switching a connection between the first antenna terminal and any one of the transmission terminal for the first communication system, the reception terminal for the first communication system, or the transmission / reception terminal for the third communication system; A second switching circuit for switching a connection between the transmission terminal for the second communication system or the reception terminal for the second communication system and the second antenna terminal,
A first bandpass filter circuit provided between the first switch circuit and the first antenna terminal; a second bandpass filter circuit provided between the second switch circuit and the second antenna terminal; A bandpass filter circuit;
A first high-frequency amplifier circuit provided between the first switch circuit and the transmission terminal for the first communication system, and between the second switch circuit and the transmission terminal for the second communication system. A second high-frequency amplifier circuit provided;
A high-frequency circuit component comprising a third band-pass filter circuit provided between the first high-frequency amplifier circuit and a transmission terminal for the first communication system. 2. The high-frequency circuit component according to claim 1, wherein the first switch circuit is configured by combining two switch circuits. 3. The high-frequency circuit component according to claim 1, wherein the second band-pass filter circuit is a combination of a high-pass filter circuit and a low-pass filter circuit. The drive power supply terminal for the first high-frequency amplifier circuit and the drive power supply terminal for the second high-frequency amplifier circuit are provided as one drive power supply terminal. The high frequency circuit component according to any one of the above. A power supply terminal for driving the detection circuit for the first high-frequency amplifier circuit and a power supply terminal for driving the detection circuit for the second high-frequency amplifier circuit are provided. The high frequency circuit component in any one of Claims 1-4. At least one inductance element and / or capacitance element constituted by an electrode pattern of the conductive material in a laminated body in which a ceramic dielectric material and a conductive material are laminated and integrated, and at least one semiconductor element mounted on the laminated body The high-frequency circuit component according to claim 1, wherein the high-frequency circuit component is formed using A communication apparatus using the high-frequency circuit component according to claim 1.

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