JP2007227587A - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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JP2007227587A
JP2007227587A JP2006046233A JP2006046233A JP2007227587A JP 2007227587 A JP2007227587 A JP 2007227587A JP 2006046233 A JP2006046233 A JP 2006046233A JP 2006046233 A JP2006046233 A JP 2006046233A JP 2007227587 A JP2007227587 A JP 2007227587A
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semiconductor laser
laser device
package
humidity
atmosphere
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Yasuyuki Nakagawa
康幸 中川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor laser device which is inexpensively manufactured and prevents a contaminant from being stuck onto a semiconductor laser element end surface, etc. <P>SOLUTION: The semiconductor laser device includes: a stem 2, and a lid 1 to which a glass window 3 is attached. A heat sink is arranged on the surface of the stem 2 in the lid 1. A semiconductor element 4 is made to adhere onto the heat sink via a sub-mount. Atmosphere in the hermetically sealed lid 1 is inert gas with moisture added thereto. Oxygen in water molecule (H<SB>2</SB>O) contained in the atmosphere reacts by a laser beam so as to dissolve an organic matter into dioxide (CO<SB>2</SB>) and water (H<SB>2</SB>O). Thus, it is prevented that the solid organic material is stuck onto the end surface of the semiconductor element 4. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体レーザ装置に関し、特に、半導体レーザ素子を気密封止してなる半導体レーザ装置に関する。   The present invention relates to a semiconductor laser device, and more particularly to a semiconductor laser device in which a semiconductor laser element is hermetically sealed.

パッケージ内に気密封止された半導体レーザ素子において、PIF(Package Induced Failure)と呼ばれる劣化がある。これはパッケージ内に残留した炭化水素が、光化学反応により、レーザ光が発振する端面に固体の有機物として付着し、この付着した有機物が光を吸収して端面の温度が上昇するため、半導体レーザ素子の端面が溶融破壊する劣化である。   In a semiconductor laser device hermetically sealed in a package, there is a deterioration called PIF (Package Induced Failure). This is because the hydrocarbon remaining in the package adheres as a solid organic substance to the end face where the laser beam oscillates due to a photochemical reaction, and the attached organic substance absorbs light and the temperature of the end face rises. This is a deterioration in which the end face of the material melts and breaks.

このような課題を解決するための技術が、例えば特許文献1および特許文献2に開示されている。特許文献1記載の技術では、半導体レーザ素子のパッケージを、気密封止する装置のチャンバ内に設置した後、酸素を導入し、パッケージを紫外線で照射して炭化水素を分解除去した後、そのチャンバ内を不活性ガスでパージし、外気に曝すことなく、前記不活性ガスで気密する方法が示されている。なお、不活性ガスとは、光学的要素に対して不活性なガスであり、例えば、乾燥した窒素、アルゴン等の希ガスが用いられている。   Technologies for solving such problems are disclosed in, for example, Patent Document 1 and Patent Document 2. In the technique described in Patent Document 1, a package of a semiconductor laser element is installed in a chamber of an airtight sealing apparatus, oxygen is introduced, and the package is irradiated with ultraviolet rays to decompose and remove hydrocarbons, and then the chamber A method is shown in which the inside is purged with an inert gas and hermetically sealed with the inert gas without being exposed to the outside air. The inert gas is a gas inert to the optical element, and for example, a dry rare gas such as nitrogen or argon is used.

また、特許文献2記載の技術では、封止ガス中に酸素(気体)を混入させることで、有機物がレーザ光で分解され、固体の有機物が付着するのを防止する技術が用いられている。しかし、封止ガス中の酸素(気体)は、パッケージ内に残留した珪素原子を含む有機化合物ガスが、光反応により、レーザ光が発振する端面に珪素化合物として付着するのを促進するため、特許文献2記載の技術ではさらに、不活性ガス中に、1ppm以上(望ましくは100ppm以下)の酸素(気体)とハロゲン族ガス及びハロゲン化合物ガスの少なくとも一方を含むガスで気密する方法が示されている。   In the technique described in Patent Document 2, a technique is used in which oxygen (gas) is mixed in a sealing gas, whereby organic substances are decomposed by laser light and solid organic substances are prevented from adhering. However, oxygen (gas) in the sealing gas promotes the adhesion of the organic compound gas containing silicon atoms remaining in the package as a silicon compound to the end face where the laser beam oscillates due to a photoreaction. The technique described in Document 2 further shows a method in which an inert gas is hermetically sealed with a gas containing oxygen (gas) of 1 ppm or more (preferably 100 ppm or less) and at least one of a halogen group gas and a halogen compound gas. .

特開2000−13736号公報JP 2000-13736 A 特開2003−298171号公報JP 2003-298171 A

しかしながら、特許文献1記載の技術においては、パッケージを組立てる装置のほかに、紫外線を照射する装置も必要となるため、コスト高となること、また、製造工程数も複数にわたるという問題があった。   However, the technique described in Patent Document 1 requires a device for irradiating ultraviolet rays in addition to a device for assembling a package, which causes a problem of increased costs and a number of manufacturing processes.

また、特許文献2記載の技術においては、不活性ガス中に混入する酸素濃度が低いため、その濃度を精密に制御する必要があるうえ、さらにハロゲン族ガス及びハロゲン化合物ガスを導入するため、コスト高の要因となるという問題があった。   In the technique described in Patent Document 2, since the oxygen concentration mixed in the inert gas is low, it is necessary to precisely control the concentration, and further, since a halogen group gas and a halogen compound gas are introduced, the cost is low. There was a problem of high.

そこで、本発明は上記のようなコスト高とならず、パッケージ内に残留する炭化水素が、レーザ光が発振する端面に固体の有機物として付着するのを簡単な構造で防止して、信頼性の高い半導体レーザ装置を提供することを目的としている。   Therefore, the present invention does not increase the cost as described above, and prevents the hydrocarbons remaining in the package from adhering to the end face where the laser beam oscillates as a solid organic substance with a simple structure, and is reliable. The object is to provide a high semiconductor laser device.

本発明に係る半導体レーザ装置は、気密封止されたパッケージに半導体レーザ素子が内包された半導体レーザ装置であって、前記パッケージ内の雰囲気が、所定の湿度を有する不活性ガスであることを特徴とする。   The semiconductor laser device according to the present invention is a semiconductor laser device in which a semiconductor laser element is included in a hermetically sealed package, and the atmosphere in the package is an inert gas having a predetermined humidity. And

本発明に係る半導体レーザ装置は、気密封止されたパッケージに半導体レーザ素子が内包された半導体レーザ装置であって、前記パッケージ内の雰囲気が、所定の湿度を有する不活性ガスであることを特徴とするので、前記雰囲気内の水分子中の酸素がレーザ光により有機物と反応し、二酸化炭素と水に分解するため、前記半導体レーザ素子の端面に前記有機物が付着することを防止できる。   The semiconductor laser device according to the present invention is a semiconductor laser device in which a semiconductor laser element is included in a hermetically sealed package, and the atmosphere in the package is an inert gas having a predetermined humidity. Therefore, oxygen in water molecules in the atmosphere reacts with the organic substance by the laser beam and decomposes into carbon dioxide and water, so that the organic substance can be prevented from adhering to the end face of the semiconductor laser element.

(実施の形態1)
本発明に係る実施の形態1の半導体レーザ装置の概略断面図を図1に示す。本実施の形態1に係る半導体レーザ装置は、ステム2と、ガラス窓3が取り付けられて蓋1とが、湿度を加えた不活性ガス中で封止固定されて構成される。以下、蓋1、ステム2およびガラス窓3との組み合わせから成る部分をパッケージと呼ぶ。すなわち、気密封止されたパッケージ内の雰囲気は湿度を加えた不活性ガスである。
(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of the semiconductor laser device according to the first embodiment of the present invention. The semiconductor laser device according to the first embodiment is configured such that a stem 2, a glass window 3, and a lid 1 are sealed and fixed in an inert gas with added humidity. Hereinafter, a portion formed by combining the lid 1, the stem 2, and the glass window 3 is referred to as a package. That is, the atmosphere in the hermetically sealed package is an inert gas with added humidity.

また、パッケージ内では、ステム2の一方の面上にヒートシンク6が設けられ、ヒートシンク6上にサブマウント5を介して半導体レーザ素子4が接着されている。また、ステム2の他方の面には、半導体レーザ素子4と電気的に接続する電極端子7が取り付けられている。なお、電極端子7は、半導体レーザ素子4と接続するもの以外に、例えば、図示しないモニタ用受光素子と電気的に接続する電極端子等も含む。   In the package, a heat sink 6 is provided on one surface of the stem 2, and the semiconductor laser element 4 is bonded onto the heat sink 6 via a submount 5. An electrode terminal 7 that is electrically connected to the semiconductor laser element 4 is attached to the other surface of the stem 2. The electrode terminal 7 includes, for example, an electrode terminal electrically connected to a monitor light receiving element (not shown) in addition to the one connected to the semiconductor laser element 4.

電極端子7から半導体レーザ素子4に駆動電流が供給されると、半導体レーザ素子4の端面からレーザ光が発振し、ガラス窓3を通過して出射される。   When a drive current is supplied from the electrode terminal 7 to the semiconductor laser element 4, laser light oscillates from the end face of the semiconductor laser element 4 and is emitted through the glass window 3.

ここで、気密封止されたパッケージ内の雰囲気や各部品には、製造工程の雰囲気中から混入されるなどして残存した炭化水素が含まれているものとする。炭化水素がレーザ光との光反応により半導体素子4の端面に固体の有機物として付着する恐れがあるが、パッケージ内の雰囲気(湿度を加えた不活性ガス)に含まれる水分子(H2O)中の酸素が、レーザ光により炭化水素と反応して、二酸化炭素(CO2)と水(H2O)に分解するため、半導体レーザ素子4の端面に個体の有機物として付着するのを防止することができる。 Here, it is assumed that the atmosphere and each component in the hermetically sealed package contain hydrocarbons remaining after being mixed from the atmosphere of the manufacturing process. Hydrocarbons may adhere to the end face of the semiconductor element 4 as a solid organic substance due to a photoreaction with laser light, but water molecules (H 2 O) contained in the atmosphere (inert gas with humidity) in the package The oxygen contained therein reacts with the hydrocarbon by the laser beam and decomposes into carbon dioxide (CO 2 ) and water (H 2 O), thereby preventing the oxygen from adhering to the end face of the semiconductor laser element 4 as a solid organic substance. be able to.

すなわち、製造工程の雰囲気から混入されるなどして残存した炭化水素が、個体の有機物として半導体レーザ素子の端面に付着するのを防止することができ、半導体レーザ装置の信頼性を向上することができる。   That is, it is possible to prevent hydrocarbons remaining after being mixed from the atmosphere of the manufacturing process from adhering to the end face of the semiconductor laser element as individual organic substances, and to improve the reliability of the semiconductor laser device. it can.

また、気密封止されたパッケージ内の雰囲気中には、酸素(気体)が含まれていないため、例えば、製造工程中にパッケージ内に残留した珪素原子を含む有機化合物ガスが、半導体レーザ素子4の端面へ珪素化合物として付着することも抑制することができる。   Further, since the atmosphere in the hermetically sealed package does not contain oxygen (gas), for example, an organic compound gas containing silicon atoms remaining in the package during the manufacturing process is generated by the semiconductor laser element 4. It can also suppress that it adheres to the end surface of this as a silicon compound.

また、湿度を加えた不活性ガス中でステム2に蓋1を封止固定して、本実施の形態1に係る半導体レーザ装置を製造することは、一般的な気密封止装置で容易に実現可能なうえ、製造工程数を増やす必要がないため、コスト高の要因を伴うことなく製造することができる。   In addition, it is easy to manufacture the semiconductor laser device according to the first embodiment by sealing and fixing the lid 1 to the stem 2 in an inert gas to which humidity is applied with a general hermetic sealing device. In addition, since it is not necessary to increase the number of manufacturing steps, the manufacturing can be performed without causing a high cost factor.

次に、本発明者は、本実施の形態1に係る半導体レーザ装置の効果を確認すべく、信頼性試験を行っている。不活性ガスとして窒素を使用し、発振波長650nmの半導体レーザ素子4と、強制的に有機物で汚染させた蓋1を用いて、図1に示す半導体レーザ装置を複数作製した。作製された半導体レーザ装置は、それぞれパッケージ内の室温(常温を含む日常的な部屋の中の温度)での湿度が異なっている。信頼性試験は、室温で、それぞれの半導体レーザ素子4を20時間発振させて、発振前後の半導体レーザ素子4の端面に付着する炭素量をオージェ電子分光法で測定する方法で実施した。   Next, the inventor conducts a reliability test in order to confirm the effect of the semiconductor laser device according to the first embodiment. A plurality of semiconductor laser devices shown in FIG. 1 were manufactured by using nitrogen as an inert gas and using the semiconductor laser element 4 having an oscillation wavelength of 650 nm and the lid 1 forcibly contaminated with an organic substance. The manufactured semiconductor laser devices have different humidity at room temperature in the package (temperature in a daily room including normal temperature). The reliability test was performed by a method in which each semiconductor laser element 4 was oscillated at room temperature for 20 hours, and the amount of carbon adhering to the end face of the semiconductor laser element 4 before and after oscillation was measured by Auger electron spectroscopy.

信頼性試験の結果を図2に示す。図2は、半導体レーザ素子4に付着する炭素量の湿度依存性を示すものであり、縦軸は、発振前の炭素量で規格化した発振後の炭素量である。したがって、縦軸が1であれば、発振前後で半導体レーザ素子4の端面に付着する炭素量は変化していないことになり、1より大きければ、半導体レーザ素子4の端面に付着する炭素量は増加したことになる。   The result of the reliability test is shown in FIG. FIG. 2 shows the humidity dependence of the amount of carbon adhering to the semiconductor laser element 4, and the vertical axis represents the carbon amount after oscillation normalized by the carbon amount before oscillation. Therefore, if the vertical axis is 1, the amount of carbon adhering to the end face of the semiconductor laser element 4 does not change before and after oscillation, and if it is greater than 1, the amount of carbon adhering to the end face of the semiconductor laser element 4 is It will be increased.

図2に示すように、不活性ガスの湿度が略0%のとき、発振前後で半導体レーザ素子4の端面に付着する炭素量は4倍程度に増加するのに対し、湿度を加えていくことで、端面に付着する炭素量を減少させることができる。これは、上述したように、湿度を加えた不活性ガス内に含まれる水分子(H2O)中の酸素が、レーザ光により有機物と反応し、二酸化炭素(CO2)と水(H2O)に分解するため、半導体レーザ素子4の端面に有機物が付着するのを防止できるからである。 As shown in FIG. 2, when the humidity of the inert gas is approximately 0%, the amount of carbon adhering to the end face of the semiconductor laser device 4 increases about four times before and after oscillation, whereas the humidity is increased. Thus, the amount of carbon adhering to the end face can be reduced. As described above, this is because oxygen in water molecules (H 2 O) contained in an inert gas to which humidity is added reacts with an organic substance by laser light, and carbon dioxide (CO 2 ) and water (H 2 ). This is because the organic substance can be prevented from adhering to the end face of the semiconductor laser element 4 because it is decomposed into O).

また、湿度10%未満では、湿度が略0%と比べて、端面に付着する炭素量は少ないものの発振前後で炭素量は増加している。一方、湿度10%以上では、発振前後での炭素量はほとんど変わらない。   In addition, when the humidity is less than 10%, the amount of carbon adhering to the end face is small compared to the case where the humidity is substantially 0%, but the amount of carbon increases before and after oscillation. On the other hand, when the humidity is 10% or more, the amount of carbon before and after oscillation hardly changes.

すなわち、不活性ガスの湿度を10%以上とすることで、パッケージ内に残存した炭化水素が、個体の有機物として半導体レーザ素子の端面に付着するのをほぼ完全に防止することができる。   That is, by setting the humidity of the inert gas to 10% or more, it is possible to almost completely prevent hydrocarbons remaining in the package from adhering to the end face of the semiconductor laser device as individual organic substances.

なお、不活性ガスとして、窒素を使用する態様で説明したが、これに限らず、例えばアルゴン、クリプトンなどを用いても良い。   In addition, although the aspect which uses nitrogen as an inert gas was demonstrated, it is not restricted to this, For example, you may use argon, krypton, etc.

(実施の形態2)
通常、半導体レーザ装置は温度調整する装置がない状況で動作することが多いため、半導体レーザ装置の温度は、周囲の環境温度に大きく左右されることになる。実施の形態1に係る半導体レーザ装置において、気密封止されたパッケージ内の雰囲気に含まれる水分量は一定であることから、温度が変化することで雰囲気の湿度が変化することが予想される。温度が下降すると湿度が上昇し、ついにはガラス窓3が結露して、半導体レーザ素子4から発振したレーザ光を半導体レーザ装置から十分に取り出すことができない場合が生じる恐れがある。
(Embodiment 2)
In general, since a semiconductor laser device often operates in a state where there is no device for temperature adjustment, the temperature of the semiconductor laser device greatly depends on the ambient environmental temperature. In the semiconductor laser device according to the first embodiment, since the amount of moisture contained in the atmosphere in the hermetically sealed package is constant, it is expected that the humidity of the atmosphere changes as the temperature changes. When the temperature falls, the humidity rises and eventually the glass window 3 is condensed, and there is a possibility that the laser light oscillated from the semiconductor laser element 4 cannot be sufficiently extracted from the semiconductor laser device.

本実施の形態2は、上述した問題を解決するためになされたものである。本発明に係る実施の形態2の半導体レーザ装置を図3に示す。なお、同一符号は同一または相当部分を指し、重畳する説明は省略する。すなわち、本実施の形態2に係る半導体レーザ装置は、気密封止されたパッケージ内に湿度を調整できる吸着剤8を備えていること以外は、図1に示す実施の形態1に係る半導体レーザ装置と同一である。   The second embodiment has been made to solve the above-described problem. A semiconductor laser device according to the second embodiment of the present invention is shown in FIG. In addition, the same code | symbol points out the same or an equivalent part, and the description which overlaps is abbreviate | omitted. That is, the semiconductor laser device according to the second embodiment is provided with the adsorbent 8 capable of adjusting the humidity in the hermetically sealed package, and the semiconductor laser device according to the first embodiment shown in FIG. Is the same.

吸着剤8は、パッケージ内の雰囲気中の水分子を吸着また脱離させる機能を有する。環境温度が上昇して湿度が減少したときは、水分子を脱離して湿度を増加させ、環境温度が下降して湿度が増加したときは、水分子を吸着して湿度減少をさせる。すなわち、環境温度が下降して生じる結露を防ぐことができる。また、環境温度が上昇したときは、パッケージ内の水分子の量が増えるため、有機物の分解能力が向上するという効果を生じる。湿度を調整できる吸着剤8としては、雰囲気中の水分子を可逆的に吸着、脱離することが可能な活性炭やモンモリロナイト等を用いることができる。   The adsorbent 8 has a function of adsorbing and desorbing water molecules in the atmosphere in the package. When the environmental temperature rises and the humidity decreases, water molecules are desorbed to increase the humidity, and when the environmental temperature decreases and the humidity increases, water molecules are adsorbed to reduce the humidity. That is, it is possible to prevent dew condensation that occurs when the environmental temperature decreases. Further, when the environmental temperature rises, the amount of water molecules in the package increases, so that the organic substance decomposition ability is improved. As the adsorbent 8 capable of adjusting the humidity, activated carbon or montmorillonite capable of reversibly adsorbing and desorbing water molecules in the atmosphere can be used.

すなわち、本実施の形態2では、結露による光学特性の劣化を防止することができ、半導体レーザ装置の信頼性をさらに向上することができる。なお、本実施の形態2でも、実施の形態1に係る半導体レーザ装置と同等の効果を発揮することは言うまでもない。   That is, in the second embodiment, it is possible to prevent the optical characteristics from being deteriorated due to condensation and to further improve the reliability of the semiconductor laser device. Needless to say, the second embodiment also exhibits the same effect as the semiconductor laser device according to the first embodiment.

なお、本発明では、単体の半導体レーザ素子が収納された半導体レーザ装置として説明しているが、複数の半導体レーザ素子がリニアアレイ状に並べられた半導体レーザ装置であってもよく、複数の光学部品がさらに設けられた半導体レーザ装置であっても構わない。このときは、半導体レーザ素子4の端面のみならずこれらの光学部品への有機物の付着を防止することができる。   Although the present invention has been described as a semiconductor laser device in which a single semiconductor laser element is housed, a semiconductor laser device in which a plurality of semiconductor laser elements are arranged in a linear array may be used. It may be a semiconductor laser device further provided with components. At this time, it is possible to prevent the organic matter from adhering not only to the end face of the semiconductor laser element 4 but also to these optical components.

実施の形態1に係る半導体レーザ装置の概略断面図である。1 is a schematic cross-sectional view of a semiconductor laser device according to a first embodiment. 実施の形態1に係る半導体レーザの信頼性試験の結果を示す図である。6 is a diagram showing a result of a reliability test of the semiconductor laser according to the first embodiment. FIG. 実施の形態2に係る半導体レーザ装置の概略断面図である。6 is a schematic cross-sectional view of a semiconductor laser device according to a second embodiment. FIG.

符号の説明Explanation of symbols

1 蓋、2 ステム、3 ガラス窓、4 半導体レーザ素子、8 吸着剤。
1 lid, 2 stem, 3 glass window, 4 semiconductor laser element, 8 adsorbent.

Claims (3)

気密封止されたパッケージに半導体レーザ素子が内包された半導体レーザ装置であって、
前記パッケージ内の雰囲気が、所定の湿度を有する不活性ガスであることを特徴とする半導体レーザ装置。
A semiconductor laser device in which a semiconductor laser element is included in a hermetically sealed package,
A semiconductor laser device characterized in that the atmosphere in the package is an inert gas having a predetermined humidity.
室温での前記湿度が10パーセント以上であることを特徴とする請求項1記載の半導体レーザ装置。   2. The semiconductor laser device according to claim 1, wherein the humidity at room temperature is 10% or more. 前記パッケージ内に湿度を調整する吸着剤をさらに備えることを特徴とする請求項1記載の半導体レーザ装置。
2. The semiconductor laser device according to claim 1, further comprising an adsorbent for adjusting humidity in the package.
JP2006046233A 2006-02-23 2006-02-23 Semiconductor laser device Pending JP2007227587A (en)

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Publication number Priority date Publication date Assignee Title
JP2017098301A (en) * 2015-11-18 2017-06-01 住友電気工業株式会社 Optical module and method for manufacturing optical module
WO2019244297A1 (en) * 2018-06-21 2019-12-26 三菱電機株式会社 Light-emitting electronic device inspection method and light-emitting electronic device manufacturing method

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JPH0479325A (en) * 1990-07-23 1992-03-12 Dainippon Screen Mfg Co Ltd Method and equipment for surface treatment of substrate
JP2003110180A (en) * 2001-07-25 2003-04-11 Furukawa Electric Co Ltd:The Semiconductor laser module and method and apparatus for measuring light
JP2003133629A (en) * 2001-10-26 2003-05-09 Sumitomo Electric Ind Ltd Variable wavelength light source and usage thereof

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0479325A (en) * 1990-07-23 1992-03-12 Dainippon Screen Mfg Co Ltd Method and equipment for surface treatment of substrate
JP2003110180A (en) * 2001-07-25 2003-04-11 Furukawa Electric Co Ltd:The Semiconductor laser module and method and apparatus for measuring light
JP2003133629A (en) * 2001-10-26 2003-05-09 Sumitomo Electric Ind Ltd Variable wavelength light source and usage thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017098301A (en) * 2015-11-18 2017-06-01 住友電気工業株式会社 Optical module and method for manufacturing optical module
WO2019244297A1 (en) * 2018-06-21 2019-12-26 三菱電機株式会社 Light-emitting electronic device inspection method and light-emitting electronic device manufacturing method

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