JP2007201877A5 - - Google Patents
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- Publication number
- JP2007201877A5 JP2007201877A5 JP2006018834A JP2006018834A JP2007201877A5 JP 2007201877 A5 JP2007201877 A5 JP 2007201877A5 JP 2006018834 A JP2006018834 A JP 2006018834A JP 2006018834 A JP2006018834 A JP 2006018834A JP 2007201877 A5 JP2007201877 A5 JP 2007201877A5
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- diaphragm
- plate
- near end
- movable electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002356 single layer Substances 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
Claims (4)
可動電極を有し音波によって振動するダイヤフラムと、
前記プレートと前記ダイヤフラムとを絶縁しながら支持し、前記固定電極と前記可動電極の間に空隙を形成しているスペーサとを備え、
前記プレート、前記ダイヤフラムの少なくとも一方は、前記スペーサに近い近端部の比抵抗が前記スペーサから遠い中央部の比抵抗に比べて高い、半導体又は金属の単層膜であり、
前記近端部は、不純物の拡散により非晶質化している、
コンデンサマイクロホン。 A plate having fixed electrodes;
A diaphragm having a movable electrode and vibrating by sound waves;
A spacer that supports the plate and the diaphragm while insulating them, and that forms a gap between the fixed electrode and the movable electrode,
Said plate, at least one of the diaphragm, the specific resistance of the proximal end closer to the spacer is higher than the specific resistance of the distant center portion from said spacer, Ri monolayer der semiconductor or metal,
The near end is amorphized by impurity diffusion,
Condenser microphone.
可動電極を有し音波によって振動するダイヤフラムと、
前記プレートと前記ダイヤフラムとを絶縁しながら支持し、前記固定電極と前記可動電極の間に空隙を形成しているスペーサとを備え、
前記プレート、前記ダイヤフラムの少なくとも一方は、前記スペーサに近い近端部の比抵抗が前記スペーサから遠い中央部の比抵抗に比べて高い、半導体又は金属の単層膜であり、
前記近端部は、不純物の拡散により酸化領域または窒化領域を有する、
コンデンサマイクロホン。 A plate having fixed electrodes;
A diaphragm having a movable electrode and vibrating by sound waves;
A spacer that supports the plate and the diaphragm while insulating them, and that forms a gap between the fixed electrode and the movable electrode,
At least one of the plate and the diaphragm is a single layer film of a semiconductor or a metal whose specific resistance near the spacer is higher than the specific resistance of the central portion far from the spacer,
The near end has an oxidized region or a nitrided region due to impurity diffusion,
Condenser microphone.
前記プレートと前記ダイヤフラムとを絶縁しながら支持し、前記固定電極と前記可動電極の間に空隙を形成しているスペーサとを備えるコンデンサマイクロホンの製造方法であって、A method of manufacturing a condenser microphone that includes a spacer that supports the plate and the diaphragm while insulating, and includes a spacer that forms a gap between the fixed electrode and the movable electrode,
前記プレート、前記ダイヤフラムの少なくとも一方を構成する半導体単層膜又は金属単層膜を形成し、Forming a single-layer semiconductor film or a metal single-layer film constituting at least one of the plate and the diaphragm;
前記半導体単層膜又は前記金属単層膜の前記中央部をマスクした状態で前記スペーサに近い近端部にイオン注入することにより前記近端部を非晶質化し、前記近端部の比抵抗を前記スペーサから遠い中央部の比抵抗より高くする、The near end portion is amorphized by ion implantation into the near end portion close to the spacer in a state where the central portion of the semiconductor single layer film or the metal single layer film is masked, and the specific resistance of the near end portion Higher than the specific resistance at the center far from the spacer,
ことを含むコンデンサマイクロホンの製造方法。A method of manufacturing a condenser microphone.
前記プレートと前記ダイヤフラムとを絶縁しながら支持し、前記固定電極と前記可動電極の間に空隙を形成しているスペーサとを備えるコンデンサマイクロホンの製造方法であって、A method of manufacturing a condenser microphone that includes a spacer that supports the plate and the diaphragm while insulating, and includes a spacer that forms a gap between the fixed electrode and the movable electrode,
前記プレート、前記ダイヤフラムの少なくとも一方を構成する半導体単層膜又は金属単層膜を形成し、Forming a single-layer semiconductor film or a metal single-layer film constituting at least one of the plate and the diaphragm;
前記半導体単層膜又は前記金属単層膜の前記中央部をマスクした状態で前記スペーサに近い近端部に酸素または窒素をイオン注入し、その後アニールすることにより前記イオン注入された近端部に酸化領域または窒化領域を形成し、前記近端部の比抵抗を前記スペーサから遠い中央部の比抵抗より高くする、In the state where the central portion of the semiconductor single layer film or the metal single layer film is masked, oxygen or nitrogen is ion-implanted into a near end portion close to the spacer, and then annealed to the ion-implanted near end portion. Forming an oxidized region or a nitrided region, and making the resistivity at the near end higher than the resistivity at the center far from the spacer;
ことを含むコンデンサマイクロホンの製造方法。A method of manufacturing a condenser microphone.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006018834A JP4587126B2 (en) | 2006-01-27 | 2006-01-27 | Condenser microphone and method of manufacturing condenser microphone |
| US12/065,173 US20090074211A1 (en) | 2005-08-30 | 2006-08-30 | Capacitor microphone and method for manufacturing capacitor microphone |
| PCT/JP2006/317134 WO2007026782A1 (en) | 2005-08-30 | 2006-08-30 | Capacitor microphone and method for manufacturing capacitor microphone |
| EP06797106A EP1921892A4 (en) | 2005-08-30 | 2006-08-30 | Capacitor microphone and method for manufacturing capacitor microphone |
| KR1020087004593A KR20080031467A (en) | 2005-08-30 | 2006-08-30 | Capacitor microphone and method for manufacturing capacitor microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006018834A JP4587126B2 (en) | 2006-01-27 | 2006-01-27 | Condenser microphone and method of manufacturing condenser microphone |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007201877A JP2007201877A (en) | 2007-08-09 |
| JP2007201877A5 true JP2007201877A5 (en) | 2009-03-12 |
| JP4587126B2 JP4587126B2 (en) | 2010-11-24 |
Family
ID=38456006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006018834A Expired - Fee Related JP4587126B2 (en) | 2005-08-30 | 2006-01-27 | Condenser microphone and method of manufacturing condenser microphone |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4587126B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101688954B1 (en) * | 2016-01-15 | 2016-12-22 | (주)글로벌센싱테크놀로지 | Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4057212B2 (en) * | 2000-02-15 | 2008-03-05 | 三菱電機株式会社 | Microphone device |
| JP3945613B2 (en) * | 2000-07-04 | 2007-07-18 | 日本放送協会 | Pressure sensor manufacturing method and pressure sensor |
| JP2003134595A (en) * | 2001-10-23 | 2003-05-09 | Star Micronics Co Ltd | Condenser microphone |
| JP4003870B2 (en) * | 2002-05-28 | 2007-11-07 | シチズン電子株式会社 | Electret condenser microphone |
-
2006
- 2006-01-27 JP JP2006018834A patent/JP4587126B2/en not_active Expired - Fee Related
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