JP2007184343A - Processing method, processing apparatus and program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus which can improve processing accuracy such as superposition accuracy while preventing deterioration in throughput, and a program used in this processing apparatus. <P>SOLUTION: Exposure apparatuses 2a, 2b which are connected with each other via a network N execute the treatment of a wafer having a partially formed region formed of distortion silicon. The exposure apparatus 2b measures all alignment marks for position measurement which are formed on the wafer, and acquires information about local distortion generated due to the region where the distortion silicon is formed. Also, an alignment mark measured by the exposure apparatus 2a is obtained from the distortion information. The exposure apparatus 2a measures the alignment mark obtained by the exposure apparatus 2b, and uses a measurement result to execute the exposure of the wafer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a processing method and a processing apparatus for performing predetermined processing on a substrate, and a program used in the apparatus.

  In recent years, devices such as semiconductor elements, liquid crystal display elements, imaging devices (CCD (Charge Coupled Device)), thin film magnetic heads, and the like have been highly integrated. In particular, a semiconductor element is often a large scale integrated circuit (LSI: Large Scale Integration) in which various electrical components are integrated on one chip due to demands for higher functionality and lower cost. Since the LSI greatly affects the performance of the entire electronic device in which the LSI is mounted, it is desired to improve the performance of the LSI alone. In particular, there is a growing demand for lower power consumption while increasing the speed of transistors formed in LSI.

In recent years, attention has been paid to a technique for partially forming a region made of strained silicon as a technique for increasing the speed of a transistor. Here, the strained silicon is a semiconductor layer (for example, SiGe (silicon germanium) layer) having a different lattice constant formed on the silicon layer, and tensile strain or compressive strain is applied to the silicon layer to increase the moving speed of electrons or holes. It is an improvement. For example, a strained silicon transistor is formed by forming such strained silicon at the gate portion. For details of a technique for partially forming a region made of strained silicon, see, for example, Patent Documents 1 to 3 below.
Japanese Patent No. 3376208 Japanese Patent No. 3376211 Japanese Patent No. 3403676

  By the way, when manufacturing the above device, an exposure process for transferring a predetermined pattern onto the substrate in a lithography process is repeatedly performed. In this exposure process, it is necessary to accurately superimpose the pattern already formed on the substrate and the optical image of the pattern to be formed next. When a region made of strained silicon is partially formed on the substrate, the direction and magnitude of the stress on the substrate is not constant on the substrate, so the amount of strain on the substrate is not constant, and the exposure process There is a possibility that sufficient overlay accuracy cannot be obtained.

  In the above exposure processing, EGA measurement is generally performed in order to improve throughput (the number of substrates that can be subjected to exposure processing per unit time). Here, the EGA measurement is the position of only a few representative (about 3 to 9) alignment marks among the position measurement marks (alignment marks) attached to the shot area set on the substrate. This is a measurement method in which measurement is performed and statistical calculation is performed using the measurement result to obtain an array of all shot areas set on the substrate.

  If the above EGA measurement is performed, even if linear distortion or non-linear distortion is generated on the substrate, superposition can be performed in consideration of these. However, when a region made of strained silicon is partially formed on the substrate, it is difficult to cope with this because the strain is random. Therefore, it is considered that the overlay accuracy can be improved by increasing the number of alignment marks to be measured in EGA measurement. However, if the number of alignment marks is increased, the throughput is lowered.

  When manufacturing a device, the inspection apparatus is used to inspect whether there is an abnormality in the pattern formed in each shot region on the substrate that has undergone the above-described lithography process. Even when this inspection is performed, a process is performed in which the alignment marks attached to the shot areas are measured to determine the arrangement of the shot areas on the substrate, and each shot area is aligned with the inspection position of the inspection apparatus. For this reason, when the inspection is performed by the inspection apparatus, the same problem as that caused by the exposure apparatus occurs.

  The present invention has been made in view of the above circumstances, and provides a processing method and processing apparatus capable of improving processing accuracy such as overlay accuracy while preventing a decrease in throughput, and a program used in the processing device. The purpose is to do.

The present invention adopts the following configuration corresponding to each diagram shown in the embodiment. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.
In order to solve the above problems, the processing method of the present invention performs a predetermined process on a substrate (W) on which a plurality of layers are stacked and a plurality of partition regions (SH) are set. In the processing method, local distortion information generated due to a local area intentionally distorted in a predetermined layer in each of the plurality of divided areas is attached to each of the plurality of divided areas on the substrate. When the predetermined process is performed on the partition area based on the first step (S12) obtained by measuring each of the position measurement marks (AM) and the distortion information obtained in the first step. And a second step (S13 to S16) for obtaining processing information used in the process.
According to the present invention, by measuring a position measurement mark attached to each of a plurality of partition areas set on a substrate, local areas caused by local areas intentionally distorted in a predetermined layer are obtained. Distortion information is measured, and processing information used when a predetermined process is performed on the partitioned area is obtained based on the distortion information.
In order to solve the above problems, the processing apparatus of the present invention performs a predetermined process on a substrate (W) on which a plurality of layers are stacked and a plurality of partition regions (SH) are set. In the processing apparatus (2a, 2b), local distortion information generated due to a local area intentionally distorted in a predetermined layer in the plurality of partition areas is converted into the plurality of partition areas on the substrate. Based on the measurement device (21, MC) obtained by measuring each position measurement mark (AM) attached to each, and the distortion information obtained by the measurement device, the predetermined area is filled with the predetermined area. And an acquisition device (MC) for obtaining processing information used when performing the above processing.
According to the present invention, a position measurement mark attached to each of a plurality of partition areas set on a substrate is generated by a local area that is measured by a measurement device and intentionally distorted in a predetermined layer. Local distortion information is obtained, and processing information used when performing predetermined processing on the partitioned area is obtained by the acquisition device based on the distortion information.
In order to solve the above problems, a program according to the present invention is a process for performing a predetermined process on a substrate (W) on which a plurality of layers are stacked and a plurality of partition areas (SH) are set. A program used in the apparatus (2a, 2b, 3), wherein local distortion information generated due to a local area intentionally distorted in a predetermined layer in the plurality of partitioned areas Based on the measurement function obtained by causing the measurement device (21) to measure the position measurement marks (AM) attached to each of the plurality of divided areas above, and the distortion information obtained by the measurement device And an acquisition function for obtaining processing information to be used when the predetermined processing is performed on the partition area.

  According to the present invention, local distortion information caused by a local region intentionally distorted in a predetermined layer is measured in advance, processing information is obtained based on the distortion information, and the processing information is used. Since the predetermined processing is performed on the partitioned area, the predetermined processing can be performed with high accuracy and in a short time. Therefore, for example, when the predetermined processing is exposure processing, it is possible to improve processing accuracy such as overlay accuracy while preventing a decrease in throughput.

  Hereinafter, a processing method, a processing apparatus, and a program according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram showing a schematic configuration of a processing system including a processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the processing system includes a host computer 1, exposure apparatuses 2a, 2b,..., A measurement / inspection apparatus 3, and a pre-measurement apparatus 4. The processing system shown in FIG. 1 is provided, for example, in a device manufacturing factory. A host computer 1, exposure apparatuses 2a, 2b,... And a measurement / inspection apparatus 3 are connected to a LAN (Local Area Network) installed in the device manufacturing factory. ) And the like via a network N.

  The host computer 1 supervises and manages various processing apparatuses (exposure apparatuses 2a, 2b,..., Measurement / inspection apparatus 3 and the like) provided in the device manufacturing factory via a network N laid in the device manufacturing factory. . An exposure apparatus 2a, 2b,... Is a kind of processing apparatus according to an embodiment of the present invention, and an apparatus for exposing and transferring a predetermined pattern onto a substrate such as a wafer or a glass substrate coated with a photosensitive agent such as a photoresist. It is.

  In the present embodiment, it is assumed that the substrate is a semiconductor wafer in which a plurality of layers are stacked and a plurality of partitioned regions (shot regions) are set. Further, it is assumed that a local region (region made of strained silicon) that is intentionally distorted in a predetermined layer in the shot region is provided on the semiconductor wafer. That is, the substrate is a semiconductor wafer in which a region made of strained silicon is partially formed.

  As the exposure apparatus 2a, 2b,..., For example, a stepper or the like that performs exposure in a state where a mask stage that holds a mask on which a predetermined pattern is formed and a substrate stage that holds a substrate are positioned in a predetermined positional relationship. A scanning exposure type projection exposure apparatus (scanning type exposure apparatus) such as a batch exposure type projection exposure apparatus (stationary type exposure apparatus) or a scanning stepper that performs exposure while relatively moving (scanning) the mask stage and the substrate stage synchronously. Apparatus). Details of the exposure apparatuses 2a, 2b,... Will be described later.

  The measurement / inspection apparatus 3 is a kind of processing apparatus according to an embodiment of the present invention, for example, measurement of overlay accuracy or line width of a pattern formed on a substrate after exposure processing of the exposure apparatuses 2a, 2b,. These inspections are performed after the fact (after the substrate is unloaded from the exposure apparatus after exposure in the exposure apparatus). The pre-measurement apparatus 4 is a type of processing apparatus according to an embodiment of the present invention, and measures an alignment mark formed on the substrate before the substrate is carried into the exposure apparatus. In the measurement and inspection device 3 and the pre-measurement device 4, only various measurements, only various inspections may be performed, or various measurements and various inspections may be performed together. Hereinafter, in this specification, measurement and inspection are collectively referred to as “measurement inspection”. In this specification, “measurement inspection” includes a case where only measurement is performed or a case where only inspection is performed. The measurement / inspection apparatus 3 and the preliminary measurement apparatus 4 may be off-line apparatuses provided separately from the exposure apparatuses 2a, 2b,..., And are inlined with respect to each of the exposure apparatuses 2a, 2b,. It may be. In the present embodiment, the case where the measurement / inspection apparatus 3 and the pre-measurement apparatus 4 are offline apparatuses provided separately from the exposure apparatuses 2a, 2b,... Will be described as an example.

  Next, exposure apparatuses 2a, 2b,..., Which are a type of processing apparatus according to an embodiment of the present invention, will be described in detail. 1 has the same configuration, the exposure apparatus 2a will be described below, and the description of the exposure apparatuses 2b,. FIG. 2 is a side view showing a schematic configuration of an exposure apparatus 2a which is a kind of processing apparatus according to an embodiment of the present invention. An exposure apparatus 2a shown in FIG. 2 is an exposure apparatus for manufacturing a semiconductor element, and sequentially moves a pattern DP formed on the reticle R while moving the reticle R as a mask and the wafer W as a substrate synchronously. This is a reduction projection type exposure apparatus of a step-and-scan method for transferring onto a wafer W.

  In the following description, if necessary, an XYZ orthogonal coordinate system is set in the drawing, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. In this XYZ orthogonal coordinate system, the XY plane is set to a plane parallel to the horizontal plane, and the Z axis is set to the vertical upward direction. Further, it is assumed that the synchronous movement direction (scanning direction) of reticle R and wafer W during exposure is set in the Y direction.

  An exposure apparatus 2a shown in FIG. 2 illuminates an illumination optical system ILS that illuminates a slit-like (rectangular or arc-shaped) illumination area extending in the X direction on the reticle R with exposure light EL having uniform illuminance, and the reticle R. Reticle stage RST for holding, projection optical system PL for projecting the image of pattern DP of reticle R onto wafer W coated with photoresist, wafer stage WST for holding wafer W, and a main control system for controlling these MC is included.

The illumination optical system ILS includes a light source unit, an illuminance uniforming optical system including an optical integrator, a beam splitter, a condensing lens system, a reticle blind, an imaging lens system, and the like (all not shown). . The configuration of the illumination optical system is disclosed in, for example, JP-A-9-320956. Here, as the light source unit, a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), an F ₂ laser light source (wavelength 157 nm), a Kr ₂ laser light source (wavelength 146 nm), an Ar ₂ laser light source ( An ultraviolet laser light source having a wavelength of 126 nm), a copper vapor laser light source, a harmonic generation light source of a YAG laser, a harmonic generation device of a solid-state laser (semiconductor laser, etc.), or a mercury lamp (i-line, etc.) can be used. .

  The reticle stage RST holds the reticle R by vacuum chucking or electrostatic chucking, and is on the upper surface of a reticle support base (surface plate) 11 disposed horizontally below the illumination optical system (−Z direction). It is configured to be movable with a predetermined stroke in the scanning direction (Y direction). In addition, the reticle stage RST is configured to be minutely driven with respect to the reticle support base 11 in the X direction, the Y direction, and the rotation direction around the Z axis (θZ direction).

  A movable mirror 12 is provided at one end on the reticle stage RST, and a laser interferometer (hereinafter referred to as a reticle interferometer) 13 is disposed on the reticle support 11. Reticle interferometer 13 irradiates the mirror surface of movable mirror 12 with laser light and receives the reflected light, so that the position of reticle stage RST in the X direction, the Y direction, and the rotational direction (θZ direction) about the Z axis. Is detected. Position information of the reticle stage RST detected by the reticle interferometer 13 is supplied to a main control system MC that controls the overall operation of the apparatus. The main control system MC controls the operation of the reticle stage RST via the reticle driving device 14 that drives the reticle stage RST.

  The projection optical system PL described above includes a plurality of refractive optical elements (lens elements), and both the object plane (reticle R) side and the image plane (wafer W) side are telecentric and have a predetermined reduction magnification β ( For example, a refractive optical system having β of 1/4, 1/5, or the like is used. The direction of the optical axis AX of the projection optical system PL is set to the Z direction orthogonal to the XY plane. For example, quartz or fluorite is used as the glass material of the plurality of lens elements provided in the projection optical system PL according to the wavelength of the exposure light EL. In the present embodiment, the projection optical system PL that projects an inverted image of the pattern DP formed on the reticle R onto the wafer W will be described as an example. Of course, an upright image of the pattern DP is projected. May be.

  The projection optical system PL is provided with a lens controller unit 15 that measures temperature and atmospheric pressure and controls optical characteristics such as imaging characteristics of the projection optical system PL in accordance with environmental changes such as temperature and atmospheric pressure. Yes. The measurement results of the temperature and atmospheric pressure of the lens controller unit 15 are output to the main control system MC. The main control system MC passes the lens controller unit 15 via the lens controller unit 15 based on the temperature and atmospheric pressure measurement results output from the lens controller unit 15. Thus, the optical characteristics such as the imaging characteristics of the projection optical system PL are controlled.

  Wafer stage WST is arranged below projection optical system PL (in the −Z direction), and holds wafer W by vacuum suction or electrostatic suction. Wafer stage WST is configured to be movable with a predetermined stroke in the scanning direction (Y direction) on the upper surface of wafer support table (surface plate) 16, and is configured to be capable of step movement in X and Y directions. In addition, it can be finely moved in the Z direction (including rotation around the X axis and rotation around the Y axis). By this wafer stage WST, the wafer W can be moved in the X direction and the Y direction, and the position and posture (rotation around the X axis and rotation around the Y axis) of the wafer W can be adjusted. .

  A moving mirror 17 is provided at one end on wafer stage WST, and a laser interferometer (hereinafter referred to as a wafer interferometer) that irradiates a mirror surface (reflection surface) of moving mirror 17 to the outside of wafer stage WST. 18 is provided. The wafer interferometer 18 irradiates the mirror surface of the movable mirror 17 with a laser beam and receives the reflected light, whereby the position and posture (X axis, Y axis, Z axis) of the wafer stage WST in the X direction and Y direction. Surrounding rotations θX, θY, θZ) are detected. The detection result of the wafer interferometer 18 is supplied to the main control system MC. Main control system MC controls the position and orientation of wafer stage WST via wafer drive unit 19 based on the detection result of wafer interferometer 18.

  The exposure apparatus 2a according to the present embodiment includes a light transmission system 20a and a light transmission system 20b, and the interior of the exposure slit area on the wafer W conjugate with the illumination area on the reticle R with respect to the projection optical system PL and the vicinity thereof. A multi-point AF sensor 20 that detects the position in the Z direction (optical axis AX direction) of the surface of the wafer W at each of a plurality of detection points set to is provided on the side of the projection optical system PL. The multipoint AF sensor 20 detects the surface position and posture of the wafer W in the optical axis AX direction of the projection optical system PL (rotations θX and θY around the X and Y axes: leveling).

  The detection result of the multipoint AF sensor 20 is supplied to the main control system MC. Main control system MC controls the position and orientation of wafer stage WST via wafer drive device 19 based on the detection result of multipoint AF sensor 20. Specifically, a reference surface (hereinafter referred to as an AF surface) serving as a reference for aligning the surface of the wafer W is set in advance in the main control system MC, and the main control system MC detects the detection result of the multipoint AF sensor 20. Based on the above, the position and orientation of wafer stage WST are controlled so that the surface of wafer W coincides with the AF plane.

  Further, the exposure apparatus 2a of the present embodiment is a FIA (Field Image) for measuring the position information of the alignment mark AM attached to the shot area set on the wafer W on the side surface in the Y direction of the projection optical system PL. Alignment) type alignment sensor 21 is arranged. A plurality of alignment marks AM are formed on the wafer W, but only one is shown in FIG. 2 for the sake of simplicity. The alignment sensor 21 includes an image sensor such as a CCD, and images an alignment mark AM on the wafer W to obtain an image signal thereof. Note that the optical axis of the alignment sensor 21 is parallel to the optical axis AX of the projection optical system PL. The measurement result of the alignment sensor 21 is supplied to the main control system MC, and the main control system MC is subjected to processing such as image processing, calculation processing, filtering processing, pattern matching, and the like to obtain position information of the alignment mark AM.

  The detailed configuration of the alignment sensor 21 is disclosed in, for example, Japanese Patent Laid-Open No. 9-219354 and US Pat. No. 5,859,707 corresponding thereto. The main control system MC performs EGA measurement using the obtained positional information of the alignment mark AM. Here, the EGA measurement is performed by performing predetermined statistical calculation (EGA calculation) on the wafer W by using the measurement results of several representative (3 to 9) alignment marks AM formed on the wafer W. This is a measurement method for obtaining the arrangement of all set shot areas.

  The exposure apparatuses 2a, 2b,... Of the present embodiment have three operation modes as operation modes. The first operation mode is an operation mode in which measurement of the alignment mark AM (EGA measurement) formed on the wafer W according to the exposure recipe and exposure of the wafer W are sequentially performed for each wafer W. The second operation mode is an operation mode in which only the measurement of the alignment mark AM formed on the wafer W is performed, and information (processing information) such as information on alignment and correction information on the shape of the shot area is obtained for each wafer W. In other words, in the second operation mode, the exposure apparatus is used as a dedicated machine for mark measurement processing as if it were the prior measurement apparatus 4.

  Here, the information relating to alignment refers to information indicating the alignment mark AM to be measured in EGA measurement, EGA correction information, and the like. Information used for correcting the shape of the projected pattern image by correcting the optical characteristics such as the magnification of the projection optical system PL. In the third operation mode, the alignment mark AM specified by the processing information obtained by the other exposure apparatus or the pre-measurement apparatus 4 is measured, or the process obtained by the other exposure apparatus or the pre-measurement apparatus 4 is performed. This is an operation mode in which the wafer W is exposed after correcting the optical characteristics of the projection optical system PL based on the correction information of the shape of the shot area included in the information.

  The switching from the first operation mode to the third operation mode is performed, for example, when the user operates the input device (not shown) provided in the main control system MC to instruct the main control system MC. When the user instructs the second operation mode to the main control system MC of the exposure apparatus 2a, at least one exposure apparatus is selected from the exposure apparatuses 2b other than the exposure apparatus 2a in the third operation mode. Must be set to When any one of the exposure apparatuses 2a, 2b,... Is set to the second operation mode, the exposure apparatus to which the obtained processing information is to be transmitted is also specified.

  The main control system MC is connected to the host computer 1 shown in FIG. 1 via the network N, and performs exposure processing according to an exposure recipe (exposure control information) transmitted from the host computer 1 via the network N. . Here, when the first operation mode is set as the operation mode of the main control system MC, the main control system MC controls the alignment sensor 21 to measure the alignment mark AM specified in the exposure recipe, EGA measurement is performed using this measurement result.

  When the second operation mode is set as the operation mode of the main control system MC, the main control system MC controls the alignment sensor 21 to measure all the alignment marks AM (EGA) formed on the wafer W. Measurement) is performed, and EGA calculation processing is performed using all of the measurement results. In addition, a plurality of combinations of alignment marks are selected, and for each alignment mark combination, EGA calculation is performed using the measurement result of the selected alignment mark, and one optimum combination for performing EGA calculation is selected. When the third operation mode is set as the operation mode of the main control system MC, the main control system MC is another exposure apparatus (for example, the exposure apparatus 2b shown in FIG. 2) or the pre-measurement apparatus 4, or these When the information obtained from the host computer 1 is collected in the host computer 1, the alignment mark AM specified by the processing information transmitted from the host computer 1 via the network N is measured, and the measurement result is used. To perform EGA measurement.

  When the first operation mode or the third operation mode is set as the operation mode, the main control system MC moves the wafer stage WST via the wafer driving device 19 based on the above EGA measurement result. Then, after aligning the projection position of the pattern DP formed on the reticle R with the shot area to be exposed, each shot area is exposed.

  Although the exposure apparatus 2a has been described in detail above, the prior measurement apparatus 4 shown in FIG. 1 also includes an alignment sensor similar to the alignment sensor 21 included in the exposure apparatus 2a, and the alignment mark AM formed on the wafer W Measurement is possible. Further, the pre-measurement apparatus 4 transmits the mark measurement result to the host computer 1 or the exposure apparatus to be exposed next (in this case, EGA calculation processing is performed at the transmission destination). Alternatively, the calculation result may be transmitted after performing the EGA calculation process. (That is, as with the main control system MC provided in the exposure apparatus 2a, the arrangement of shot areas on the wafer W may be obtained based on the measurement result of the alignment sensor.) Based on the measurement result of the alignment sensor or the EGA measurement result using the measurement result, each shot area of the wafer W is aligned with the inspection position, and the overlay accuracy or the line width is measured and inspected.

  Next, a processing method according to an embodiment of the present invention will be described. In the following description, a case where exposure processing is performed using the exposure apparatuses 2a and 2b shown in FIG. 1 will be described as an example. FIG. 3 is a flowchart showing an outline of a processing method according to an embodiment of the present invention. As shown in FIG. 3, in the present embodiment, first, using the exposure apparatus 2b, the alignment mark AM formed on each wafer W for one lot with a plurality of (for example, 25) wafers W as a unit is measured. Then, a processing apparatus used when the exposure apparatus 1a performs the exposure process is calculated from the measurement result (step S1). Next, processing information calculated by the exposure apparatus 2b is transmitted to the exposure apparatus 2a (step S2), and exposure processing is performed in the exposure device 2a based on the processing information from the exposure apparatus 2b (step S3). As described above, in this embodiment, the measurement of the alignment mark AM, the calculation of the processing information, and the exposure processing are performed with the wafer W for one lot as a unit.

  In the present embodiment, the operation of step S1 in FIG. 3 (that is, each step in FIG. 4) is performed using the exposure apparatus 2b. However, the present invention is not limited to this, and the above-described pre-measurement apparatus. 4, the operation of step S1 in FIG. 3 may be performed. In this case, the information obtained by the prior measurement device 4 is transmitted directly to the exposure device 2a in step S2 of FIG. 3 or indirectly via the host computer 1 described above.

  Next, details of steps S1 and S2 shown in FIG. 4 will be described. FIG. 4 is a flowchart showing details of step S1 in FIG. First, a user places a carrier such as a FOUP (Front Opening Unified Pod) in which a lot of wafers W are accommodated at the wafer loading start position of the exposure apparatus 2b. Next, the user operates an input device (not shown) provided in the main control system MC of the exposure apparatus 2b to set the operation mode of the exposure apparatus 2b to the second operation mode. Further, the user also specifies an exposure apparatus to which processing information is to be transmitted. In this embodiment, the exposure apparatus 2a shown in FIG. 1 is designated as this exposure apparatus. When the above preparation is completed and the user gives an instruction to start processing, the main control system MC of the exposure apparatus 2b controls a wafer transfer device (wafer loader) (not shown) to take out the wafer W accommodated in the carrier from the carrier. And loaded into the exposure apparatus 2a. Wafer W transferred by the wafer transfer apparatus is held on wafer stage WST (step S11).

  When wafer W is held on wafer stage WST, main control system MC moves wafer stage WST stepwise in the XY plane via wafer drive device 19 to align alignment mark AM formed on wafer W. The sensors are sequentially arranged in the measurement visual field of the sensor 21, and each alignment mark AM is measured by the alignment sensor 21 (step S12). Here, the shot area and the alignment mark will be described. FIG. 5 is a diagram illustrating an example of a shot region set on the wafer W and an alignment mark formed on the wafer W.

  As shown in FIG. 5A, rectangular shot areas SH are arranged on the wafer W at regular intervals, and an alignment mark AM is attached to each shot area SH. In FIG. 5A, the alignment mark AM is shown larger for convenience of illustration. The size and number of the shot areas SH may be changed for each device to be manufactured, and the shape of the alignment mark AM and the position in the shot area SH may be changed for each layer to be formed.

  As shown in FIG. 5B, the alignment mark AM has, for example, a rectangular shape extending in the Y direction and X marks mx arranged at equal intervals in the X direction, and a rectangular shape extending in the X direction. It consists of Y marks my arranged at equal intervals in the direction. By measuring the X mark mx of the alignment mark AM, the position in the X direction of the shot area SH provided with the alignment mark AM is obtained, and by measuring the Y mark my, the shot area provided with the alignment mark AM The position of SH in the Y direction is obtained. That is, the position information obtained by measuring the alignment mark AM is position information representative of the shot area SH provided with the alignment mark AM. In step S12 described above, all the alignment marks AM formed on the wafer W are measured, and position information representing each shot area (for example, information indicating the center position of the shot area SH) is obtained.

  When the measurement of all alignment marks AM is completed, the main control system MC performs EGA calculation using the measurement results of all alignment marks AM (step S13). Linear error component (in the substrate) linear error component (in the substrate error) on the shot region array arranged on the wafer W by this EGA calculation, linear position error in the shot region (linear component in the shot error) ) And a random error component (random component). Here, as the linear component of the substrate error, a deviation amount (offset) in the X direction due to an error (position error) of wafer stage WST when forming a layer, a magnification error of projection optical system PL, and the like, There are six types: a deviation amount in the Y direction, a rotation amount (rotation) of the wafer W, a magnification in the X direction (scaling), a magnification in the Y direction, and an orthogonality.

  In addition, the linear component of the above-mentioned intra-shot error may be caused by an aberration of the projection optical system PL when forming a layer. FIG. 6 is a diagram illustrating an example of a random component obtained by EGA calculation and a nonlinear component of an error in a shot. In the exposure process performed when forming a layer on the wafer W, when a pincushion type distortion (distortion) occurs in the projection optical system PL, the shot region SH shown in FIG. It deforms as shown in FIG. FIG. 6 is a diagram for explaining an example of a nonlinear component obtained by EGA calculation. In FIG. 6, a circle marked in each shot area SH represents the center position of the shot area SH.

  Referring to FIG. 6, it can be seen that not only the shape of each shot area SH is changed, but also the center position thereof is non-linearly shifted. Here, even if the alignment mark AM attached to each shot area SH is measured, only the position of each shot area SH (for example, the position of the circle in FIG. 6) is obtained, and the shape change of the shot area SH However, it is possible to indirectly determine the shape change of the shot area SH from the arrangement of the shot areas SH. In this embodiment, the shape change of the shot area SH is obtained from the calculation result of the EGA calculation performed in step S13, which will be described later, and correction information (image shape deformation correction amount used in step S25 described later) is corrected. Calculated.

  Here, as described above, a region made of strained silicon is partially formed on the wafer W, and the alignment mark AM on the wafer W is displaced due to the strained silicon. If strained silicon is formed on the entire surface of the wafer W, it is considered that the displacement of the alignment mark AM due to the strained silicon is substantially uniform, and correction is performed by using the linear component or the nonlinear component obtained by the EGA calculation. It is considered possible.

  However, when the region made of strained silicon is partially formed on the wafer W, the strain becomes random. For this reason, as shown in FIG. 7, it is considered that the positional deviation of the alignment mark AM (shot arrangement deviation) is also random. That is, the difference (random component) between the measurement result of the alignment mark AM (measurement value of all marks in step S12) and the EGA calculation value (coordinate position of each mark in the EGA calculation) obtained in step S13 is It is considered to be distortion information indicating local distortion for each shot (mark). In this step S13, this distortion information is calculated and stored for each shot (for each mark) in order to use it as a reference index (comparison target) when optimizing a sample shot to be described later.

  FIG. 7 is a diagram illustrating an example of the positional deviation of the alignment mark AM caused by partial distortion. In FIG. 7, a circle marked in each shot area SH represents a designed center position of the shot area SH, and an arrow marked in each shot area SH indicates an actually formed alignment mark AM. Represents the position shift direction and the position shift amount of the center of the shot area SH obtained from. The above-described random component (distortion information) is caused by a random misalignment of the alignment mark AM. When the partial distortion increases due to the strained silicon, the random component also increases.

  When the EGA calculation using the measurement results of all the alignment marks AM is completed, the main control system MC selects several (for example, 3 to 9) alignment marks AM from the alignment marks AM formed on the wafer W. A plurality of combinations are selected (step S14). For example, n (n is a positive integer) shot areas SH1 to SHn are set on the wafer W, and when three alignment marks AM are selected from these, the shot areas SHi, SHj, SHk Select three. Here, i, j, and k are different integers of 1 or more and n or less.

  That is, the main control system MC sets each of the variables i, j, and k to different values and selects the first combination of the alignment marks AM attached to the shot areas SHi, SHj, and SHk. Next, the second combination of the alignment marks AM attached to the shot areas SHi, SHj, SHk is set by setting the value of at least one of the variables i, j, k to a value different from the previously set value. select. Similarly, the values of the variables i, j, k are set so that all the values of the variables i, j, k are not equal to the previously set values, and the alignment marks attached to the shot areas SHi, SHj, SHk Select a combination.

  When the selection of the combination of alignment marks AM is completed, the main control system MC performs EGA calculation using the measurement result of the selected alignment mark AM for each combination of alignment marks AM selected in step S14 (step S15). . When m (m is an integer of 2 or more) combinations are selected in step S14, EGA calculation using the measurement result of the alignment mark AM selected in each combination is performed m times. . Thereby, the linear component, nonlinear component, and random component mentioned above are calculated | required for every combination. Further, the SH array of the shot area on the wafer W is obtained by performing the EGA calculation. The main control system MC obtains the shape change of the shot area from the calculation result, and also calculates correction information for correcting this.

  When the above steps are completed, the main control system MC selects one optimal combination for performing the EGA calculation from a plurality of combinations of the alignment marks AM based on the above EGA calculation result. Specifically, the linear component from the coordinate value of each shot measured in step S12, that is, the residual random component (distortion information) obtained by removing the EGA calculation value of each shot calculated for each combination, and the above-described steps A combination is selected in which the difference between the distortion information calculated and stored in S13 for each shot is the smallest for each shot (step S15). That is, here, the distortion information obtained and stored in step S13 and the distortion information calculated in step S15 are compared for each shot, and a mark combination that minimizes the difference of the entire wafer is selected. In this step, a combination of alignment marks AM that minimizes the influence of strain as a whole while reflecting the influence of strained silicon is selected. In other words, in this selection method, in other words, the linear error component (EGA parameter) obtained by the EGA calculation is changed to the EGA parameter in the all shot EGA made by using the measured value and the design value of the alignment mark attached to all the shots. The combination (alignment mark combination) that provides the most similar (approximate) EGA parameter is selected from a plurality of combinations.

  As another selection method, the following method is also conceivable. Specifically, a combination that minimizes the residual random component from which the linear component has been removed is selected (step S15). Here, as described above, the random component is caused by a random displacement of the alignment mark AM, and the random component increases as the influence of strained silicon increases. For this reason, in this step, a combination of alignment marks AM that has the least influence of strained silicon is selected. If the number of alignment mark combinations is infinite, it takes a long time to calculate. Therefore, a plurality of sample shots (for example, about 20) having an appropriate number and arrangement are selected in advance, and any of them is selected. It is desirable in terms of measurement throughput to select a plurality of combinations of the number and arrangement marks.

  In the present embodiment, an example is given in which, in step S15, EGA calculation is performed for each combination of alignment marks AM, and correction information for correcting the shape change of the shot area is calculated from the calculation result. However, in order to save the time required to calculate the correction information, the EGA calculation result for each combination of alignment marks AM is temporarily stored in step S15, and one alignment mark AM combination is selected in step S16. After that, it is desirable to calculate correction information using the EGA calculation result for this combination. When a combination of alignment marks AM is selected, the main control system MC temporarily stores the selection result (including correction information) (step S17).

  When the above steps are completed, the main control system MC of the exposure apparatus 2b determines whether or not there is a wafer W to be measured (step S18). When the determination result is “YES”, a wafer transfer device (not shown) is controlled to unload the wafer W on the wafer stage WST and accommodate it in the carrier. At the same time, a new wafer W accommodated in the carrier is taken out of the carrier, loaded into the exposure apparatus 2b and held on the wafer stage W (step S11), and measurement on the wafer W is performed. On the other hand, when the determination result of step S18 is “NO”, the step of measuring all alignment marks AM for the wafers W for one lot, that is, step S1 shown in FIG. The information temporarily stored in step S17 is transmitted to the exposure apparatus 2a designated by the user after the processing shown in FIG. 4 is completed (step S2 in FIG. 3).

  FIG. 8 is a flowchart showing details of step S3 in FIG. First, the user places a carrier in which wafers for one lot measured using the exposure apparatus 2b are accommodated at the wafer loading start position of the exposure apparatus 2a. Next, the user operates an input device (not shown) provided in the main control system MC of the exposure apparatus 2a to set the operation mode of the exposure apparatus 2a to the third operation mode.

  When the above preparation is completed and the user gives an instruction to start processing, first, the main control system MC of the exposure apparatus 2a controls a reticle transport apparatus (reticle loader) (not shown) to change the reticle R according to the exposure recipe. Transport. The reticle R transported by the reticle transport apparatus is held on the reticle stage RST (step S21). When reticle R is held on reticle stage RST, a process (reticle alignment) for adjusting the relative positional relationship between reticle R and wafer stage WST is performed.

  Next, the main control system MC controls a wafer transfer device (wafer loader) (not shown) to take out the wafer W accommodated in the carrier from the carrier and load it into the exposure apparatus 2a. Wafer W transferred by the wafer transfer apparatus is held on wafer stage WST (step S22). In the present embodiment, the alignment mark AM formed on the wafer W is measured by both the exposure apparatuses 2a and 2b. For this reason, if the method for holding the wafer W on the wafer stage WST of the exposure apparatus 2a is different from the method for holding the wafer W on the wafer stage WST of the exposure apparatus 2b, for example, a local distortion caused by strained silicon may occur. A difference arises and the measurement result in the exposure apparatus 2b becomes completely meaningless. Therefore, it is desirable to use the same method for holding the wafer W in the exposure apparatus 2a and the exposure apparatus 2b.

  When wafer W is held on wafer stage WST, main control system MC moves wafer stage WST stepwise in the XY plane via wafer drive unit 19, and is designated by the processing information transmitted from exposure apparatus 2b. Only the alignment marks AM are sequentially arranged in the measurement visual field of the alignment sensor 21, and each alignment mark AM is measured by the alignment sensor 21 (step S23). As described above, the optimum combination of the alignment marks AM for performing the EGA calculation is selected by the measurement by the exposure apparatus 2b. Here, measurement of the selected alignment mark AM is performed. Since the processing information is obtained for each wafer W, the main control system MC performs the above processing using the processing information of the wafer W held on the wafer stage WST.

  When the measurement of the alignment mark AM is completed, the main control system MC performs an EGA calculation using the measurement result of the alignment mark AM. Thereby, the arrangement of shot areas on the wafer W is obtained (step S24). Next, the main control system MC of the exposure apparatus 2a controls the optical characteristics of the projection optical system PL via the lens controller unit 15 based on the correction information included in the processing information from the exposure apparatus 2b (step S25). As a result, the shape of the image of the pattern DP projected onto the wafer W via the projection optical system PL is corrected in accordance with the shape change of the shot region SH. Here, the optical characteristics of the projection optical system PL are controlled in accordance with the shape change of the shot area SH to be exposed first among the plurality of shot areas SH formed on the wafer W.

  When the above process is completed, the exposure process for the shot area SH set on the wafer W is started. When the exposure process is started, first, the main control system MC of the exposure apparatus 2a drives the reticle stage RST via the reticle driving device 14 to place the reticle R at the exposure start position. At the same time, the wafer stage WST is driven via the wafer driving device 19 to place the shot area SH to be exposed first on the wafer W at the exposure start position.

  When the above arrangement is completed, the main control system MC starts the movement of the reticle stage RST and the wafer stage WST via the reticle driving device 14 and the wafer driving device 19, respectively. After starting the movement of both stages, the main control system MC calculates the moving speeds of the reticle stage RST and the wafer stage WST based on the detection results of the reticle interferometer 13 and the wafer interferometer 18, and sets each of them to a predetermined speed. Determine whether it has been reached. Further, based on the detection results of reticle interferometer 13 and wafer interferometer 18, whether or not reticle stage RST and wafer stage WST are synchronized, and whether or not both stages have reached a predetermined position (exposure start position). Judging.

  When it is determined that reticle stage RST and wafer stage WST have reached a predetermined speed and have reached a predetermined position synchronously, main control system MC outputs a control signal to illumination optical system ILS to output exposure light EL. The injection is started, and the reticle R is irradiated with slit-shaped exposure light EL. By irradiation with the exposure light EL, an image of a part of the pattern DP formed on the reticle R (a portion illuminated with the exposure light EL) is projected into the shot area to be exposed first by the projection optical system PL. Here, since reticle stage RST and wafer stage WST move synchronously, the irradiation position of exposure light EL on reticle R changes continuously, and the projection position of the pattern image in the shot area also continues. Changes. Thereby, the shot area to be exposed first is sequentially exposed.

  During the exposure of the shot area, the main control system MC determines the position and orientation of the wafer stage WST in the Z direction via the wafer driving device 19 based on the detection result of the multipoint AF sensor 20 ( Control (auto focus control) of rotation around the X and Y axes θX, θY: leveling is performed. Thereby, the shot area is exposed in a state where the surface of the wafer W is aligned with the image plane of the projection optical system PL.

  When the exposure process for one shot area is completed, the main control system MC determines whether there is another shot area to be exposed (step S27). When the determination result is “YES”, the main control system MC controls the optical characteristics of the projection optical system PL via the lens controller unit 15 based on the correction information included in the processing information from the exposure apparatus 2b. (Step S25). As a result, the shape of the image of the pattern DP projected onto the wafer W via the projection optical system PL is corrected in accordance with the shape change of the shot area SH to be exposed next.

  Next, the main control system MC drives the wafer stage WST via the wafer drive device 19 and places the shot area SH to be exposed next at the exposure start position. Further, the reticle stage RST is driven via the reticle driving device 14 to place the reticle R at the exposure start position. The main control system MC starts the movement of the reticle stage RST and the wafer stage WST via the reticle driving device 14 and the wafer driving device 19, respectively, and exposes the shot area SH to be exposed next (step S26). . While there is a shot area to be exposed (while the determination result of step S27 is “YES”), steps S25 and S26 are repeated.

  On the other hand, when the determination result in step S27 is “NO”, the main control system MC of the exposure apparatus 2a determines whether or not there is a wafer W to be measured (step S28). When the determination result is “YES”, a wafer transfer device (not shown) is controlled to unload the wafer W on the wafer stage WST and accommodate it in the carrier. At the same time, a new wafer W accommodated in the carrier is taken out of the carrier, loaded into the exposure apparatus 2a and held on the wafer stage W (step S22), and the wafer W is exposed. On the other hand, when the determination in step S28 is “NO”, the step of exposing one lot of wafers W, that is, step S3 shown in FIG.

  As described above, in this embodiment, first, all alignment marks AM formed on the wafer W in lot units are measured using the exposure apparatus 2b, and the optimum alignment mark for performing EGA calculation for each wafer W. Correction information for correcting the combination of AM and the shape of the shot area is obtained. Then, the processing information obtained using the exposure apparatus 2b is transmitted to the exposure apparatus 2a, and the alignment mark AM is measured based on the processing information and the optical characteristics of the projection optical system PL are controlled using the exposure apparatus 2a. In addition, the wafers W in lot units are exposed.

  Since measurement and exposure of all alignment marks AM of the wafers W included in one lot are performed by different exposure apparatuses, measurement and exposure can be performed in parallel, thereby preventing a decrease in throughput. can do. In addition, since an optimum combination of alignment marks AM is required for performing EGA calculation for each wafer W based on the measurement result performed by the exposure apparatus 2b, overlay is performed when exposure is performed by the exposure apparatus 2a. Accuracy can be improved. Furthermore, since the shape of the pattern image is corrected according to the change in the shape of the shot area, the overlay accuracy can also be improved. From the above, even if different distortions occur for each wafer W, it is possible to improve processing accuracy such as overlay accuracy while preventing a decrease in throughput.

  As mentioned above, although embodiment of this invention was described, this invention is not restrict | limited to the said embodiment, It can change freely within the scope of the present invention. For example, in the above-described embodiment, all alignment marks AM are measured for each wafer W, and an optimum combination of alignment marks AM is obtained for performing EGA measurement for each wafer W. However, since the same pattern is formed on the wafers W included in one lot, it is conceivable that local wafers caused by strained silicon tend to have similar tendency between the wafers W. For this reason, a combination of alignment marks AM common to all the wafers W from which average measurement accuracy (EGA measurement accuracy) can be obtained from the measurement results of the alignment marks AM of all the wafers W may be selected. .

  It is not always necessary to measure all alignment marks AM formed on all wafers W included in one lot. However, from the viewpoint of improving measurement accuracy, it is desirable that the number of alignment marks AM to be measured is large. Further, in the above-described embodiment, correction information for correcting the shape of the shot area for each wafer W is obtained for each shot area. However, when the shape change of the shot area between the wafers W shows a similar tendency, the wafer W It is also possible to obtain correction information that is common to both, and correct the change in the shape of the shot area of each wafer W using this correction information.

  Moreover, in the said embodiment, it measured with the exposure apparatus 2b, and performed the exposure process with the exposure apparatus 2a using this measurement result. However, the above measurement may be performed by an apparatus that measures the alignment mark AM of the wafer W and obtains processing information. Furthermore, in the above embodiment, the case where the exposure process is performed using the measurement result of the alignment mark AM of the wafer W has been described as an example. However, the above measurement result may be used for the measurement inspection in the measurement inspection apparatus 3. good. For example, when measuring and inspecting the overlay accuracy using the measurement / inspection apparatus 3, it is necessary to align each shot region with the inspection position of the measurement / inspection apparatus 3. For this reason, only a predetermined alignment mark is measured using the above measurement result, EGA measurement is performed to obtain an array of shot areas, and based on this, a shot area to be measured and inspected is arranged at an inspection position, and a measurement inspection is performed. Is preferably performed.

  When the main control system MC included in the exposure apparatuses 2a and 2b is a computer, the optimum alignment mark AM is determined from the function of controlling the alignment sensor 21 described above to measure the alignment mark AM and the measurement result. Is stored in the computer, and various functions are realized by executing this program, and the above-described measurement is performed. This program may be stored in a computer-readable recording medium such as a CD-ROM or a DVD (registered trademark) -ROM. If the program recorded on this recording medium is read using a drive device such as a CD-ROM drive or a DVD (registered trademark) -ROM drive, it can be installed in a computer.

  In the above embodiment, the case where the present invention is applied to a reduction projection type exposure apparatus of the step-and-scan method has been described as an example. However, the present invention is a reduction projection type of the step-and-repeat method. It can also be applied to an exposure apparatus. The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of wafer stages. The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.

  The present invention can also be applied to an exposure apparatus using a liquid immersion method as disclosed in International Publication No. 99/49504. In the present invention, an immersion exposure apparatus that locally fills the space between the projection optical system PL and the wafer W with a liquid, a substrate to be exposed as disclosed in JP-A-6-124873, is held. An immersion exposure apparatus for moving a stage in a liquid tank, a liquid tank having a predetermined depth formed on a stage as disclosed in JP-A-10-303114, and holding a substrate in the liquid tank The present invention can be applied to any exposure apparatus of the exposure apparatus.

  Further, as the above exposure apparatus, in addition to an exposure apparatus used for manufacturing a semiconductor element and transferring a device pattern onto a semiconductor substrate, exposure used for manufacturing a liquid crystal display element and transferring a circuit pattern onto a glass plate. An exposure apparatus used for manufacturing an apparatus, a thin film magnetic head and transferring a device pattern onto a ceramic wafer, and an exposure apparatus used for manufacturing an image sensor such as a CCD can be used.

  Next, a device manufacturing method will be described. FIG. 9 is a flowchart showing a part of a manufacturing process for manufacturing a semiconductor element as a micro device. As shown in FIG. 9, first, in step S31 (design step), the function / performance design of the semiconductor element is performed, and the pattern design for realizing the function is performed. Subsequently, in step S32 (mask manufacturing step), a mask (reticle) on which the designed pattern is formed is manufactured. On the other hand, in step S33 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S34 (exposure processing step), as will be described later, an actual circuit or the like is formed on the wafer by lithography or the like using the mask and wafer prepared in steps S31 to S33. Next, in step S35 (device assembly step), device assembly is performed using the wafer processed in step S34. Step S35 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S36 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S35 are performed. After these steps, the microdevice is completed and shipped.

  FIG. 10 is a diagram showing an example of a detailed flow of step S34 of FIG. In FIG. 10, in step S41 (oxidation step), the surface of the wafer is oxidized. In step S42 (CVD step), an insulating film is formed on the wafer surface. In step S43 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S44 (ion implantation step), ions are implanted into the wafer. Each of the above steps S41 to S44 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above-described pre-processing step is completed, the post-processing step is executed as follows. In this post-processing step, first, in step S45 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S46 (exposure process), the mask pattern is transferred to the wafer by the lithography system (exposure apparatus) described above. Next, in step S47 (development process), the exposed wafer is developed, and in step S48 (etching step), the exposed members other than the portion where the resist remains are removed by etching. In step S49 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple patterns are formed on the wafer.

  In the microdevice manufacturing method described above, measurement and exposure are performed using the exposure apparatuses 2a and 2b described above in the exposure step (step S46). Moreover, the measurement inspection using the measurement inspection apparatus 3 and the prior measurement apparatus 4 shown in FIG. 1 is performed. For this reason, even if all the alignment marks formed on the wafer are inspected, the throughput is not lowered, and the overlay accuracy can be increased. Thereby, a fine device can be efficiently produced with a high yield.

It is a block diagram which shows schematic structure of a processing system provided with the processing apparatus by one Embodiment of this invention. It is a side view which shows schematic structure of the exposure apparatus 2a which is a kind of processing apparatus by one Embodiment of this invention. It is a flowchart which shows the outline of the processing method by one Embodiment of this invention. It is a flowchart which shows the detail of process S1 in FIG. FIG. 3 is a diagram illustrating an example of a shot region set on a wafer W and an alignment mark formed on the wafer W. It is a figure which shows an example of the random component calculated | required by EGA calculation, and the nonlinear component of the error in a shot. It is a figure which shows an example of the position shift of alignment mark AM resulting from a partial distortion. It is a flowchart which shows the detail of process S3 in FIG. It is a flowchart which shows a part of manufacturing process which manufactures the semiconductor element as a microdevice. It is a figure which shows an example of the detailed flow of step S34 of FIG.

Explanation of symbols

2a, 2b Exposure apparatus 3 Measurement inspection apparatus 4 Pre-measurement apparatus 21 Alignment sensor AM Alignment mark DP pattern MC Main control system R Reticule SH Shot area W Wafer

Claims (11)

In a processing method for performing predetermined processing on a substrate on which a plurality of layers are stacked and a plurality of partitioned areas are set,
In the plurality of partitioned areas, local distortion information generated due to the local areas intentionally distorted in a predetermined layer is used for position measurement attached to each of the plurality of partitioned areas on the substrate. A first step obtained by measuring each of the marks,
And a second step of obtaining processing information used when performing the predetermined processing on the partition area based on the distortion information obtained in the first step.   The processing method according to claim 1, wherein the partition areas are positioned with respect to positions where the predetermined processing is performed based on position information determined based on the processing information.   The processing method according to claim 2, wherein the processing information is information for specifying a mark to be measured for each of the substrates selected from the marks formed on the substrate. The second step includes
A step of calculating a first calculation result using a statistical method for a measurement result of each of the plurality of partition areas measured in the first step;
Selecting a plurality of arbitrary combinations of marks from the plurality of marks, and calculating a second calculation result for each selected set using a method similar to the statistical method;
The processing method according to claim 3, further comprising: selecting one set from the plurality of sets based on a comparison result between the first calculation result and the second calculation result. The predetermined process is a process of exposing and transferring an image of a pattern formed on a mask to each partition area on the substrate,
The processing method according to claim 1, wherein the processing information includes information for correcting a shape of the pattern image transferred onto the substrate.   The processing method according to any one of claims 1 to 5, wherein the first step and the second step are performed in units of lots in which a predetermined number of substrates are used as a unit. Based on the processing information, using an exposure apparatus, including an exposure step of exposing a pattern on the partition area,
The processing method according to any one of claims 1 to 6, wherein the first and second steps are performed by an apparatus different from the exposure apparatus used in the exposure process. In a processing apparatus for performing a predetermined process on a substrate on which a plurality of layers are stacked and a plurality of partition areas are set,
In the plurality of partitioned areas, local distortion information generated due to the local areas intentionally distorted in a predetermined layer is used for position measurement attached to each of the plurality of partitioned areas on the substrate. A measuring device obtained by measuring each of the marks,
A processing device comprising: an acquisition device that obtains processing information used when performing the predetermined processing on the partition region based on the distortion information obtained by the measuring device.   9. The processing apparatus according to claim 8, wherein the processing information is information for specifying a mark to be measured for each of the substrates selected from the marks formed on the substrate. The predetermined process is a process of exposing and transferring an image of a pattern formed on a mask to each partition area on the substrate,
The processing apparatus according to claim 8, wherein the processing information includes information for correcting a shape of the pattern image transferred onto the substrate. A program used in a processing apparatus that performs a predetermined process on a substrate on which a plurality of layers are stacked and a plurality of partitioned areas are set.
In the plurality of partitioned areas, local distortion information generated due to the local areas intentionally distorted in a predetermined layer is used for position measurement attached to each of the plurality of partitioned areas on the substrate. A measurement function that allows each measurement device to measure each mark,
A program for causing a computer to realize an acquisition function for obtaining processing information used when performing the predetermined processing on the partitioned area based on the distortion information obtained by the measuring device.

Images