JP2007183491A - Phase shift mask and manufacturing method, and method for manufacturing semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a phase shift mask, a method for manufacturing the same, and a method for manufacturing a semiconductor element. <P>SOLUTION: The phase shift mask has a substrate and a plurality of phase shift patterns formed on the substrate. The method for manufacturing the phase shift mask includes the steps of: forming a polymer layer on the substrate; changing the molecular structure in a plurality of prescribed areas in the polymer; and removing the polymer layer except the prescribed areas. The method for manufacturing the semiconductor element using this phase shift mask includes the steps of: forming a photoresist layer on the substrate; exposing the photoresist layer to light with the use of the phase shift mask; and developing the photoresist layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a phase shift mask, a method for manufacturing the same, and a method for manufacturing a semiconductor element, and more particularly to a phase shift mask for manufacturing a phase pattern using a polymer material, a method for manufacturing the phase shift mask, and a method for manufacturing a semiconductor element.

  As device integration increases, lithography techniques in semiconductor processes with higher resolution are required to meet device precision requirements. One way to increase the resolution is to use a light source with a short wavelength. For example, deep ultraviolet light (wavelength 248 nm) generated by a KrF laser or deep ultraviolet light (wavelength 193 nm) generated by an ArF laser can be used as an exposure light source for lithography. Another method for increasing the resolution is to use a phase shift mask. This method is an important technique in the semiconductor industry because the degree of analysis can be increased without changing the exposure light source.

  US Pat. No. 5,240,796 discloses a method of manufacturing a chromeless phase shift mask 10 as shown in FIGS. In this method, first, as shown in FIG. 1, a chromium layer 22 is formed on a quartz substrate 20, and a photoresist layer 24 having a plurality of opening patterns is formed on the chromium layer 22 using a lithography process. Next, as shown in FIG. 2, the portion of the chromium layer 22 that is not covered by the photoresist layer 24 is removed to the surface of the quartz substrate 20 using etching, and a plurality of opening patterns 26 are formed, followed by peeling. The photoresist layer 24 is completely removed by the process. Next, as shown in FIG. 3, etching is performed again using the remaining chromium layer 22 as an etching mask, and the quartz substrate 20 that is not covered with the remaining chromium layer 22 is etched to a predetermined depth T. A plurality of opening patterns 32 are formed on the substrate 20. Next, as shown in FIG. 4, a photoresist layer 28 is formed on the chromium layer 22 by using a lithography process. Then, by performing an etching process, the chromium layer 22 not covered with the photoresist layer 28 is removed to the surface of the quartz substrate 20 to form a plurality of auxiliary patterns (Scattering Bars) 30. Thereafter, a stripping process is performed again to completely remove the photoresist layer 28, thereby producing a chromeless phase shift mask 10 as shown in FIG. Note that the quartz substrate 20 between the plurality of opening patterns 32 constitutes a plurality of convex patterns 34.

As shown in FIG. 6, when the exposure light beam 12 exposes a photoresist layer (not shown) through the chromeless phase shift mask 10, there is a difference in the thickness of the quartz substrate 20. The phase with the light beam 16 that has passed is different, and interference occurs. The difference in distance at which the passed light beam 14 and the passed light beam 16 propagate into the quartz substrate 20 is Δd = d ₁ −d ₂ = mλ / [2 (n _{quartz substrate−} n _air )]. Here, n is the refractive index, λ is the wavelength of the exposure light beam 12, and m is a positive integer. Theoretically, the phase angle of the passed light beam 14 is designed to be delayed by 180 degrees from the phase of the passed light beam 16 (that is, the convex pattern 34 is used as a phase shift pattern). Increase the degree of analysis by generating.

  However, it is difficult to accurately control that the opening pattern 32 generated by the etching process remains at the position of the predetermined depth T in the quartz substrate 20, and the shape and size of the opening pattern 32 by the etching process are difficult. It is also difficult to precisely control the angle, so that a desired rectangular opening cannot be formed and a trapezoidal opening may be formed. In other words, it is difficult to control the depth, shape, and size of the opening pattern 32, and the phase difference between the passed light beam 14 and the passed light beam 16 is not theoretically 180 degrees, so that a phase error occurs.

  Further, in the above-described prior art, since the quartz substrate 20 is etched to form the opening pattern (that is, the phase shift pattern) 32, quartz contamination defects due to the etching process are likely to occur in the vicinity of the opening pattern 32. , Mask inspection becomes difficult. Further, since the above-described conventional technique requires two lithography processes to form the photoresist layers 24 and 28, it is difficult to control the alignment and the mask yield is limited. Furthermore, when the line width (Line Width) and the space (Space Width) of the mask pattern are 1: 1, an image cannot be formed by the modified illumination.

  An object of the present invention is to provide a phase shift mask having a phase pattern formed using a polymer material, a method for manufacturing the phase shift mask, and a method for manufacturing a semiconductor element.

  To achieve the foregoing object, the present invention discloses a phase shift mask. The phase shift mask includes a substrate and a plurality of phase shift patterns installed on the substrate. The phase shift pattern is made of a polymer material, and the interval in the first direction is smaller than the width of the phase shift pattern. Preferably, the phase shift pattern is a plurality of linear patterns arranged in an array. The linear pattern has an interval in the second direction equal to the width of the linear pattern, and the second direction. Is perpendicular to the first direction described above. Further, the substrate described above may be a quartz substrate, or may include an interface layer that is a conductive layer or an adhesive layer provided on the surface of the substrate.

  The method for producing a phase shift mask of the present invention includes a step of forming a polymer material layer on a substrate, a step of changing the molecular structure of the polymer material layer in a plurality of predetermined regions by electron beam irradiation, and a step other than the plurality of predetermined regions. Removing the polymer material layer and forming a plurality of phase shift patterns. The polymer material may be hydrogen silsesquioxane (HSQ). In order to remove the polymer material layer other than the plurality of predetermined regions, a development process is performed using a saponifying solution. The saponifying solution includes sodium hydroxide solution, potassium hydroxide solution and tetramethylammonium hydroxide ( Tetramethyl Ammonium Hydroxide (TMAH) solution. The polymer material layer may be methyl silsesquioxane (MSQ). To remove the polymer material layer other than the predetermined regions, a solution of alcohols may be used. A development process may be performed. Further, the above-mentioned polymer material layer may be HOSP (Hybrid Organic Siloxane Polymer: HOSP), and in order to remove the polymer material layer other than the above-mentioned predetermined regions, a development process using a normal propyl acetate solution. May be performed.

  The method for manufacturing a semiconductor device of the present invention includes a step of forming a photoresist layer on a substrate, a step of exposing the photoresist layer using a phase shift mask, and a step of developing the photoresist layer. The phase shift mask includes a substrate and a plurality of phase shift patterns placed on the substrate, the phase shift pattern is made of a polymer material, and the phase shift pattern is spaced from the phase in the first direction. It is smaller than the width of the shift pattern. The polymer material is a silsesquioxane material, and the silsesquioxane material may be a hydrogen silsesquioxane material or a methyl silsesquioxane material. The polymer material may be a HOSP (Hybrid Organic Siloxane Polymer: HOSP) material. Preferably, the phase shift pattern is a plurality of linear patterns arranged in an array. The linear pattern has an interval in the second direction equal to the width of the linear pattern, and the second direction. Is perpendicular to the first direction described above.

  The present invention can improve the yield of a mask and solve problems such as a phase error due to an etching process and difficulty in inspecting a mask. The effects of the present invention are as follows.

  1. In the conventional technique, since it is necessary to perform the lithography process twice, it is difficult to control the alignment, and the yield of the mask is limited. However, in the present invention, the phase shift pattern is manufactured using a combination of spin coating and electron beam irradiation and a development technique, so that the manufacturing process is simplified and the mask yield can be improved. Also, the present invention eliminates the alignment problem because it does not require two lithographic processes.

  2. Since the phase shift pattern is manufactured by etching the quartz substrate in the prior art, problems such as phase error and mask inspection difficulty occur. However, according to the present invention, since it is not necessary to etch the quartz substrate in order to manufacture the phase shift pattern, it is possible to solve the conventional problems such as phase error and mask inspection difficulty.

  3. In addition, the present invention solves the problem that the image cannot be formed by the modified illumination when the line width and the interval of the pattern of the chromeless phase shift mask are 1: 1, and the shape contrast of each kind of pattern is increased. Can be better.

  Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  7-9 is a figure which shows the manufacturing method of the chromeless phase shift mask 50 of this invention. As shown in FIG. 7, first, a polymer layer 62 is formed on a substrate 52 by a spin coating process, and energy (for example, an electron beam 64 is irradiated to a plurality of predetermined regions 66 arranged in an array in the polymer layer 62. To change the chemical properties of the polymer layer 62 in the predetermined region 66. That is, the energy provided by the electron beam can change the molecular structure of the polymer in the predetermined region 66.

  Next, as shown in FIG. 8, by performing a development process, the polymer layer that is not irradiated with the electron beam (that is, the polymer layer other than the predetermined region 66) is removed, and the remaining polymer layer 62 in the predetermined region 66 is removed. The phase shift patterns 68 arranged in an array are formed on the substrate 52 as shown in FIG. Since the energy provided by the electron beam 64 can change the molecular structure of the polymer irradiated with the electron beam 64, the polymer irradiated with the electron beam 64 and the non-irradiated polymer are Have different solubilities. Thereby, the development process can not only selectively remove the polymer layer (polymer layer other than the predetermined region 66) that is not irradiated with the electron beam 64 but also hold the polymer in the predetermined region 66.

  In other words, since the polymer layer 62 between the plurality of predetermined regions 66 arranged in an array is not irradiated with the electron beam 64, a plurality of light-transmitting regions disposed between the phase shift patterns 68 after the development process. 56 is formed. Further, the plurality of phase shift patterns 68 constitute a plurality of linear patterns 54 and a plurality of linear patterns 58 installed between the plurality of linear patterns 54. Preferably, the vertical interval of the phase shift pattern 68 is smaller than the vertical width of the phase shift pattern 68, that is, the vertical width of the phase shift pattern 68 is larger than the vertical width of the light transmitting region 56. . The horizontal interval of the linear pattern 54 is substantially equal to the horizontal width of the linear pattern 54, that is, the linear pattern 54 and the linear pattern 58 have substantially the same width. Further, the substrate 52 may be a quartz substrate, or may include an interface layer (not shown) disposed on the surface of the substrate 52. This interface layer is a conductive layer made of cis-type polyacetylene or polyaniline, or an adhesive layer made of hexamethyldisilazane.

  The polymer layer 62 includes a silsesquioxane material. For example, the silsesquioxane material may be hydrogen silsesquioxane (HSQ), in which case development with a saponifying solution is used to remove the polymer material layer 62 that is not irradiated with the electron beam 64. Performing the process, this saponifiable solution is either a sodium hydroxide solution, a potassium hydroxide solution or a tetramethylammonium hydroxide solution. The polymer material layer may be methyl silsesquioxane (MSQ). In this case, in order to remove the polymer material layer 62 that is not irradiated with the electron beam 64, a solution of alcohols (for example, an alcohol solution) ) May be used for the development process. Further, the polymer material layer may be HOSP (Hybrid Organic Siloxane Polymer: HOSP). In this case, in order to remove the polymer material layer 62 that is not irradiated with the electron beam 64, development is performed using a normal propyl acetate solution. A process may be performed. By irradiating the polymer layer 62 with the electron beam 64, the molecular structure of the polymer layer 62 is changed. For example, when the polymer layer 62 irradiated with the electron beam 64 is hydrogen silsesquioxane (HSQ), the molecular structure of the hydrogen silsesquioxane changes from cage-like to network-like (Network). In this case, since the bond is formed with the quartz substrate 52, the polymer layer 62 other than the predetermined region 66 can be selectively removed when the development process is subsequently performed using a saponifying solution.

  FIG. 10 is a variation diagram of the reflection coefficient with respect to exposure light fluxes having different wavelengths in the phase shift pattern 68. According to FIG. 10, when the wavelength of the exposure light beam is 193 nm, the corresponding reflection coefficient is about 1.52, and the well-known phase shift formula P = 2π (n−1) d / mλ (here, P Is the phase shift angle, n is the reflection coefficient, λ is the wavelength of the exposure light beam, and the thickness of the phase shift pattern 68 is 1828 nm (the difference between the phase shift angles is 177 degrees to 183 degrees) The thickness of the phase shift pattern 68 is 1797 nm to 1858 nm). When the wavelength of the exposure light beam is 248 nm, the corresponding reflection coefficient is about 1.45, and the thickness of the phase shift pattern 68 calculated by the above-described phase shift formula is 2713 nm (the difference in phase shift angle is When the angle is set to 177 degrees to 183 degrees, the thickness of the phase shift pattern 68 is 2668 nm to 2759 nm.

  FIG. 11 is a variation diagram of the extinction coefficient with respect to exposure light fluxes having different wavelengths in the phase shift pattern 68. According to FIG. 11, when the wavelength of the exposure light beam is 190 to 900 nm, the extinction coefficient of the phase shift pattern 68 is substantially zero. Accordingly, the polymer material used in the present invention forms a light-transmitting material capable of delaying the phase of the transmitted light beam after being irradiated with the electron beam 64, and therefore is applied to a phase shift mask.

  FIGS. 12 and 13 are views showing a semiconductor element (for example, a transistor gate or a conductive layer) in which the chromeless phase shift mask 50 of the present invention is applied to a semiconductor substrate 70. 12 is a cross-sectional view taken along the line AA in FIG. 9, and FIG. 13 is a cross-sectional view taken along the line BB in FIG. The ratio of the width in the 0 degree region and the 180 degree phase transition region of the chromeless phase shift mask 50 is 1: 1. The thickness of the phase shift pattern 68 can delay the phase of the passing light beam 76 after the exposure light beam 74 passes through the phase shift pattern 68 by 180 degrees, and the thickness of the passing light beam 78 after the exposure light beam 74 passes through the light transmitting region 56. Designed to maintain 0 degrees without affecting the phase. As a result, the zero-order light of the passing light beam 76 and the zero-order light of the passing light speed 82 always form destructive interference with the zero-order light of the passing light beam 78, so that the linear region 80 of the photoresist layer 72 directly below it. Cannot be exposed. In other words, the exposure light beam 74 cannot expose the linear region 80 (directly below the linear pattern 54), and can expose only the linear region 82 (directly below the linear pattern 58).

  FIG. 14A is a diagram showing a result of calculating the distribution of intensity by which the exposure light beam 74 passes through the chromeless phase shift mask 50 and is incident on the aerial image by the SOLIDE optical simulation program. When the photoresist threshold of the photoresist layer 72 is designed to be 0.3, by using the chromeless phase shift mask 50 of the present invention and the modified illumination, the photoresist layer 72 of the semiconductor 70 has a line whose distance is equal to the width. Pattern can be formed. Further, as shown in FIG. 9, the light beam that has passed through the linear pattern 54 and the light beam that has passed through the light-transmitting area 56 have a phase difference of 180 degrees, and the size and shape of the light-transmitting area 56 are optical simulations. Determined by the program. With respect to the modified illumination, the 0th-order diffracted light beam of the passing light beam 76 and the 0th-order diffracted light beam of the passing light beam 78 interfere with each other without being canceled and form an image.

  In addition, when the chromeless phase shift mask 50 of the present invention is used to perform modified illumination on a pattern having a line width / interval ratio of 1: 1, the zero-order light and the phase shift of the light beam that has passed through the light-transmitting region 56 are used. The zero-order light of the passing light beam 76 that has passed through the pattern 68 forms destructive interference, and also passes through the phase shift pattern 68 and has a phase delayed by 180 degrees and the zero-order light and the linear pattern 58 of the passing light beam 76. And the 0th-order light of the passing light beam 78 having a phase delayed by 0 degree also forms destructive interference. Specifically, the 0th-order light of the passing light beam 76 that has passed through the phase shift pattern 68 and whose phase has been delayed by 180 degrees is completely destroyed and does not cause interference and cannot be imaged, but passes through the linear pattern 58 and is phased. The zero-order light of the passing light beam 78 delayed by 0 degrees is partially destroyed, and the intensity of the light is equal to the + 1st order and the −1st order, so that the linear region 80 and the linear region 82 of the photoresist layer 72 The difference in intensity of irradiation light can be increased, that is, the contrast can be increased. On the other hand, when the conventional chromeless phase shift mask 10 shown in FIG. 6 is used, the intensity thereof is as shown in FIG. 14B, and the difference in light intensity in the aerial image is too small. 72 cannot be imaged.

  In the present invention, since the substrate 52 is not etched, the thickness of the substrate 52 directly below the phase shift pattern 68 and the light transmitting region 56 is the same. In other words, the exposure light beam 74 has passed through the substrate 52 having the same thickness when passing through the light-transmitting region 56 and the phase shift pattern 68, and thus in the linear region 80 and the linear region 82 of the photoresist layer 72. The intensity difference of the irradiation light is due to the phase shift pattern 68. That is, the phase shift angle of the chromeless phase shift mask 50 is mainly determined by the thickness of the phase shift pattern 68 and is not related to the thickness of the substrate 52.

  Further, since the thickness of the quartz substrate in the phase shift mask of the present invention is the same, the distance by which the exposure light beam propagates to this quartz substrate is the same. Accordingly, the present invention can avoid the phase error and light intensity variation problems generated by etching the quartz substrate as in the prior art. Further, since the phase shift pattern of the present invention can be formed on a quartz substrate by a spin coating process, the thickness of the phase shift pattern (that is, the phase shift angle) can be accurately controlled. Furthermore, since the main component of the material of the polymer layer of the present invention is a polymer material such as silsesquioxane or HOSP, the chemical structure of the polymer layer is changed by irradiation with an electron beam, and The polymer layer can be removed using a solution. Further, since the diameter of the electron beam is small, a small region of the polymer layer can be irradiated locally, and the lateral width of the phase shift pattern can be accurately controlled.

  Compared with the prior art, the present invention can improve the yield of the mask and solve problems such as phase error due to the etching process and difficulty in inspecting the mask. Also, the present invention eliminates the alignment problem because it does not require two lithographic processes. Furthermore, the present invention does not require etching of the quartz substrate in order to produce the phase shift pattern. Therefore, problems such as conventional phase error, mask inspection difficulty, and defects caused by etching of the quartz substrate are eliminated. Can be solved.

  The preferred embodiment of the present invention has been described above, but the present invention is not limited to this embodiment, and all modifications to the present invention are within the scope of the present invention unless departing from the spirit of the present invention.

It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the conventional chromeless phase shift mask. It is a figure which shows the manufacturing method of the chromeless phase shift mask of this invention. It is a figure which shows the manufacturing method of the chromeless phase shift mask of this invention. It is a figure which shows the manufacturing method of the chromeless phase shift mask of this invention. It is a change figure of the reflection coefficient with respect to the exposure light beam in which a polymer layer has a different wavelength. It is a change figure of the extinction coefficient with respect to the exposure light beam in which a polymer layer has a different wavelength. It is a figure which shows the semiconductor element which applies the chromeless phase shift mask of this invention to a semiconductor substrate. It is a figure which shows the semiconductor element which applies the chromeless phase shift mask of this invention to a semiconductor substrate. FIG. 5 is a distribution diagram of the intensity at which the exposure light beam passes through the chromeless phase shift mask of the present invention and irradiates the photoresist layer. FIG. 6 is a distribution diagram of intensity at which an exposure light beam passes through a conventional chromeless phase shift mask and irradiates a photoresist layer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Chromeless phase shift mask 12 Exposure light beam 13 Positioning slot holes 14 and 16 Passing light beam 20 Quartz substrate 22 Chrome layer 24 and 28 Photoresist layers 26 and 32 Opening pattern 30 Catering bar 34 Protrusion pattern 50 Chromeless phase shift mask 52 Substrate 54, 58 Linear pattern 56 Translucent region 62 Polymer layer 64 Electron beam 66 Predetermined region 68 Phase shift pattern 70 Semiconductor substrate 72 Photoresist layer 74 Exposure beam 76, 78 Passing beam 80, 82 Linear region

Claims (38)

A substrate,
A plurality of phase shift patterns installed on the substrate;
Have
The phase shift pattern is made of a polymer material, and the interval between the phase shift patterns in the first direction is smaller than the width of the phase shift pattern.
Phase shift mask. The polymer material is a silsesquioxane material;
The phase shift mask according to claim 1. The silsesquioxane material is hydrogen silsesquioxane,
The phase shift mask according to claim 2. The silsesquioxane material is methyl silsesquioxane,
The phase shift mask according to claim 2. The polymer material is HOSP (Hybrid Organic Siloxane Polymer),
The phase shift mask according to claim 1. The substrate is a quartz substrate;
The phase shift mask according to claim 1. The substrate includes the quartz substrate and an interface layer installed on the surface of the quartz substrate.
The phase shift mask according to claim 1. The interface layer is a conductive layer or an adhesive layer.
The phase shift mask according to claim 7. The phase shift patterns are arranged in an array.
The phase shift mask according to claim 1. The plurality of phase shift patterns constitute a plurality of linear patterns.
The phase shift mask according to claim 1. The interval between the linear patterns in the second direction is equal to the width of the linear pattern, and the second direction is perpendicular to the first direction.
The phase shift mask according to claim 10. Forming a polymer material layer on the substrate;
Changing the molecular structure of the polymer material layer within a plurality of predetermined regions;
Removing the polymer material layer other than the plurality of predetermined regions to form a plurality of phase shift patterns;
Have
An interval between the plurality of predetermined regions in the first direction is smaller than a width of the plurality of predetermined regions;
A method of manufacturing a phase shift mask. Using a spin coating process to form the polymer material layer on the substrate;
The manufacturing method of the phase shift mask of Claim 12. The polymer layer includes a silsesquioxane material,
The manufacturing method of the phase shift mask of Claim 12. The silsesquioxane material is hydrogen silsesquioxane,
The manufacturing method of the phase shift mask of Claim 14. Using a saponifying solution, removing the polymer material layer other than the plurality of predetermined regions,
The manufacturing method of the phase shift mask of Claim 15. The presaponifying solution is any one of a sodium hydroxide solution, a potassium hydroxide solution and a tetramethylammonium hydroxide solution.
The manufacturing method of the phase shift mask of Claim 16. The silsesquioxane material is methyl silsesquioxane,
The manufacturing method of the phase shift mask of Claim 14. Using an alcohol solution, removing the polymer material layer other than the plurality of predetermined regions,
The manufacturing method of the phase shift mask of Claim 18. The alcohol solution is alcohol.
The manufacturing method of the phase shift mask of Claim 19. The polymeric material layer comprises HOSP;
The manufacturing method of the phase shift mask of Claim 12. Using a normal propyl acetate solution, removing the polymer material layer other than the plurality of predetermined regions,
The manufacturing method of the phase shift mask of Claim 21. The plurality of predetermined regions are arranged in an array;
The manufacturing method of the phase shift mask of Claim 12. The plurality of predetermined regions constitute a plurality of linear patterns;
The manufacturing method of the phase shift mask of Claim 12. The interval between the plurality of linear patterns in the second direction is equal to the width of the plurality of predetermined regions, and the second direction is perpendicular to the first direction.
The manufacturing method of the phase shift mask of Claim 24. The substrate is a quartz substrate;
The manufacturing method of the phase shift mask of Claim 12. The substrate includes the quartz substrate and an interface layer installed on the surface of the quartz substrate.
The manufacturing method of the phase shift mask of Claim 12. The interface layer is a conductive layer or an adhesive layer.
The method of manufacturing a phase shift mask according to claim 27. Irradiating the plurality of predetermined regions with an electron beam, and changing a molecular structure of a polymer material layer in the predetermined regions;
The manufacturing method of the phase shift mask of Claim 12. Providing energy to the plurality of predetermined regions, and changing a molecular structure of a polymer material layer in the predetermined regions;
The manufacturing method of the phase shift mask of Claim 12. Forming a photoresist layer on the substrate;
Using a phase shift mask to expose the photoresist layer;
Developing the photoresist layer;
Have
The phase shift mask includes the substrate and a plurality of phase shift patterns installed on the substrate,
The phase shift pattern is made of a polymer material, and an interval between the plurality of phase shift patterns in a first direction is smaller than a width of the plurality of phase shift patterns.
A method for manufacturing a semiconductor device. The polymer material is a silsesquioxane material;
32. A method of manufacturing a semiconductor device according to claim 31. The silsesquioxane material is hydrogen silsesquioxane,
A method for manufacturing a semiconductor device according to claim 32. The silsesquioxane material is methyl silsesquioxane,
A method for manufacturing a semiconductor device according to claim 32. The polymeric material is HOSP;
32. A method of manufacturing a semiconductor device according to claim 31. The phase shift patterns are arranged in an array;
32. A method of manufacturing a semiconductor device according to claim 31. The plurality of phase shift patterns constitute a plurality of linear patterns.
32. A method of manufacturing a semiconductor device according to claim 31. The interval between the plurality of linear patterns in the second direction is equal to the width of the plurality of linear patterns, and the second direction is perpendicular to the first direction.
38. A method of manufacturing a semiconductor device according to claim 37.

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