JP2007172632A - Ic card and entry system using the ic card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a higher performance IC card capable of guaranteeing security by preventing forgery with a supposititious facial portrait, etc., furthermore, displaying an image other than facial portraits. <P>SOLUTION: The IC card comprises a display device and a plurality of thin-film integrated circuits. The plurality of thin-film integrated circuits control the drive of the display device, semiconductor elements used in the plurality of thin-film integrated circuits and the display device are formed by using a polycrystalline semiconductor film, the plurality of thin-film integrated circuits are stacked, the display device and the plurality of thin-film integrated circuits are mounted on the same print wiring substrate, and the IC card has a film thickness of 0.05 mm or large, but not larger than 1mm. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to an IC card incorporating an integrated circuit such as a memory or a microprocessor (CPU), and further relates to a transaction content recording system when the IC card is used as a cash card.

A magnetic card of a magnetic recording type can record only about several tens of bytes, whereas an IC card with a built-in semiconductor memory generally records about 5 KB or more. There is a much larger capacity. In addition, there is a merit that data is not read by a physical method such as putting iron on a card like a magnetic card, and stored data is not easily tampered with.

In recent years, IC cards have become more sophisticated due to the addition of a CPU in addition to memory, and are used for cash cards, credit cards, prepaid cards, examination tickets, identification cards such as student ID cards and employee ID cards. , Commuter pass, membership card and so on. As an example of the enhancement of functionality, Japanese Patent Application Laid-Open No. 2004-228561 describes an IC card equipped with a display device that can display simple characters, numbers, and the like, and a keyboard for inputting numbers.
Japanese Patent Publication No.2-7105

As described in Patent Document 1, by adding a function to an IC card, a new way of use becomes possible. Currently, e-commerce using IC cards, telecommuting, telemedicine, distance education, digitization of administrative services, automatic highway toll collection, video distribution services, etc. are being put to practical use. IC cards are considered to be used in a wide range of fields.

As usage expands in this way, unauthorized use of IC cards has become a major problem that cannot be ignored, and how to increase the certainty of personal authentication when using IC cards is a future issue.

One way to prevent unauthorized use is to post a photo of your face on an IC card. By posting a facial photograph, a third party can visually identify the person when using an IC card, unless the terminal is an unattended terminal device such as an ATM. Even when a security monitoring camera capable of photographing the user's face at a close distance is not installed, unauthorized use can be effectively prevented.

However, in general, a facial photograph is transferred to an IC card by a printing method, and there is a pitfall that it can be replaced relatively easily by forgery.

The thickness of the IC card is generally as thin as 0.7 mm. Therefore, when the area where the integrated circuit is mounted is limited, it is necessary to mount more integrated circuits having a larger circuit scale and memory capacity in the limited volume in order to increase the functionality.

Therefore, an object of the present invention is to propose a more sophisticated IC card that can ensure security by preventing counterfeiting such as face photo replacement and can display images other than face photos.

In the present invention, a display device thin enough to fit in the IC card is mounted in the IC card. Specifically, an integrated circuit and a display device are manufactured using the following method.

First, a metal film is formed on the first substrate, and the surface of the metal film is oxidized to form a very thin metal oxide film of several nm. Next, an insulating film and a semiconductor film are sequentially stacked on the metal oxide film. Then, a semiconductor element used for an integrated circuit or a display device is manufactured using the semiconductor film. In this specification, in order to distinguish from an integrated circuit formed using an existing silicon wafer, the integrated circuit used in the present invention is hereinafter referred to as a thin film integrated circuit. After the semiconductor element is formed, a second substrate is attached so as to cover the element, and the semiconductor element is sandwiched between the first substrate and the second substrate.

Then, a third substrate is bonded to the side of the first substrate opposite to the side where the semiconductor element is formed in order to reinforce the rigidity of the first substrate. When the first substrate is higher in rigidity than the second substrate, the semiconductor element is less likely to be damaged when the first substrate is peeled off, and can be removed smoothly. Note that the third substrate is not necessarily bonded to the first substrate if the first substrate has sufficient rigidity when the first substrate is peeled off from the semiconductor element later.

Next, heat treatment or the like is performed to crystallize the metal oxide film, increase brittleness, and facilitate separation of the substrate from the semiconductor element. Then, the first substrate is peeled off from the semiconductor element together with the third substrate. Note that the heat treatment for crystallizing the metal oxide film may be performed before the third substrate is bonded, or may be performed before the second substrate is bonded. Alternatively, the heat treatment performed in the step of forming the semiconductor element may also serve as the step of crystallizing the metal oxide film.

By this peeling, a portion that is separated between the metal film and the metal oxide film, a portion that is separated between the insulating film and the metal oxide film, and a portion where the metal oxide film itself is separated into both are generated. In any case, the semiconductor element is peeled off from the first substrate so as to stick to the second substrate side.

After the first substrate is peeled off, the semiconductor element is mounted on a printed wiring board or an interposer, and the second substrate is peeled off. Note that the second substrate is not necessarily peeled off, and the second substrate may be completed as long as the thickness of the second substrate does not matter.

Note that the display element of the display device is manufactured after mounting. Specifically, in the case of a liquid crystal display device, for example, a pixel electrode of a liquid crystal cell electrically connected to a TFT, which is one of semiconductor elements, and an alignment film covering the pixel electrode are manufactured and then mounted. Then, a counter substrate prepared separately is bonded and liquid crystal is injected to complete.

Further, after the first substrate is peeled off, the semiconductor element may be bonded to another substrate which is a base of the display device instead of the printed wiring board or the interposer. After the display element is formed and the display device is completed, the display device may be mounted on the printed wiring board or the interposer together with the base substrate. In this case, the peeling of the second substrate is
It will be done before mounting. Note that the thickness of the base substrate is preferably set so as not to hinder the thinning of the IC card itself, specifically, about several hundred μm or less.

In addition, electrical connection (bonding) between a display device or a thin film integrated circuit formed using a semiconductor element and a printed wiring board or an interposer is performed by a flip chip method, TA
A B (Tape Automated Bonding) method or a wire bonding method may be used. When the flip chip method is used, bonding is performed simultaneously with the mounting. When the wire bonding method is used, the bonding process is performed in a state where the second substrate is peeled off after mounting.

Note that in the case where a plurality of thin film integrated circuits and display devices are formed over one substrate, dicing is performed in the middle so that the thin film integrated circuits and display devices are separated from each other. The timing of dicing differs depending on the presence or absence of packaging in the case of a thin film integrated circuit, and varies depending on the presence or absence of a base substrate in the case of a display device.

When a thin film integrated circuit is packaged, a plurality of thin film integrated circuits may be mounted on the same interposer and used as an MCP. Also in this case, an electrical wire bonding method between thin film integrated circuits may be used, or a flip chip method may be used.

The interposer may be of a type that makes electrical connection with the printed wiring board using a lead frame, may be a type that uses bumps, or may have a known form.

In the present invention, the thickness of an integrated circuit made of a silicon wafer is about 50 μm, whereas a thin semiconductor film having a thickness of 500 nm or less is used, and the total thickness is 1 μm to 5 μm.
In the following, a remarkably thin thin film integrated circuit of typically about 2 μm can be formed. The thickness of the display device can be about 0.5 mm, more preferably about 0.02 mm. Therefore, the display device can be mounted on an IC card having a thickness of 0.05 mm or more and 1 mm or less, and a thin film integrated circuit having a larger circuit scale and a larger memory capacity can be used in a limited volume of the IC card. Many IC cards can be mounted, and the multi-functions of the IC card can be realized without hindering the reduction in size and weight.

In addition, since the present invention can use a large-sized glass substrate that is cheaper than a silicon wafer, thin film integrated circuits can be mass-produced at a lower cost and with a higher throughput, and production costs can be drastically reduced. be able to. Further, since the substrate can be used repeatedly, the cost can be reduced.

In addition, unlike an integrated circuit manufactured using a silicon wafer, there is no need to perform back-grind processing that causes cracks and polishing marks, and variations in thickness also occur when each film constituting the thin film integrated circuit is formed. Therefore, it is about several hundreds of nanometers at most, and can be remarkably reduced as compared with the variation of several to several tens of micrometers due to the back grinding process.

In addition, since a thin film integrated circuit and a display device can be attached to match the shape of the printed wiring board, the degree of freedom of the shape of the IC card is increased. Therefore, for example, the IC card can be formed in a shape having a curved surface that can be attached to a cylindrical bin or the like.

Note that the thin film integrated circuit is not limited to a form in which the thin film integrated circuit is directly mounted on the printed wiring board as a bare chip, and a form in which the thin film integrated circuit is mounted after being mounted on the interposer and packaged is also possible. By mounting as a bare chip, it is possible to reduce the size and weight. On the other hand, by mounting after packaging, when mounting the thin film integrated circuit supplied by the packaging manufacturer on the electronic equipment manufacturer side, installation is not required without equipment / technology such as a clean room or special bonder. Can be easily. Further, the thin film integrated circuit can be protected from the external environment, the footprint of the printed wiring board can be standardized, and the wiring of the submicron scale thin film integrated circuit can be expanded to the same millimeter scale as the printed wiring board.

Packages include not only CSP (Chip Size Package) and MCP (Multi Chip Package), but also DIP (Dual In-line Package), QFP (Quad Flat Package), SOP (Small)
Any known form such as Outline Package) is possible.

As the display device, for example, a liquid crystal display device, a light emitting device including a light emitting element typified by an organic light emitting element in each pixel, a DMD (Digital Micromirror Device), or the like can be used. The thin film integrated circuit can be provided with a microprocessor (CPU), a memory, a power supply circuit, and other digital and analog circuits. Further, a driver circuit for the display device and a controller for generating a signal to be supplied to the driver circuit may be provided in the thin film integrated circuit.

Note that the present invention is not limited to a card, and includes a portable recording medium having the above-described thin film integrated circuit and a display device and capable of transmitting / receiving data to / from a host.

As described above, in the present invention, since a large-sized glass substrate that is cheaper than a silicon wafer can be used, a thin film integrated circuit can be mass-produced at a lower cost and with a higher throughput. Can be suppressed. Further, since the substrate can be used repeatedly, the cost can be reduced.

Further, in the present invention, since a thin film integrated circuit can be remarkably thinned, a larger number of thin film integrated circuits having a larger circuit scale and memory capacity can be mounted in a limited volume of the IC card. In addition, the display device can be formed with a thickness that allows the display device to be mounted on an IC card having a thickness of 0.05 mm to 1 mm. Therefore, the multi-function of the IC card can be realized without hindering the reduction in size and weight.

In addition, since a thin film integrated circuit and a display device can be attached to match the shape of the printed wiring board, the degree of freedom of the shape of the IC card is increased. Therefore, for example, the IC card can be formed in a shape having a curved surface that can be attached to a cylindrical bin or the like.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

FIG. 1A shows a top view of the IC card of the present invention. The IC card shown in FIG.
A contact type in which a connection terminal provided in the IC card and a reader / writer of the terminal device are electrically connected and data is transmitted and received is a contact type, but a non-contact type in which data is transmitted and received without contact may be used.

Reference numeral 101 denotes a card body, 102 denotes a pixel portion of a display device mounted on the card body 101, and 103 corresponds to a connection terminal of a thin film integrated circuit mounted on the card body 101.

FIG. 1B shows the configuration of the printed wiring board 104 sealed inside the card body shown in FIG. FIG. 1C shows the printed wiring board 104 shown in FIG.
The structure of the back side of is shown. A display device 105 is mounted on one surface of the printed wiring board 104, and a thin film integrated circuit 106 is mounted on the other surface.

In the IC card shown in FIG. 1, the display device 105 and the thin film integrated circuit 106 are mounted on different surfaces of the printed wiring board 104, but both may be mounted on the same surface. As shown in FIG. 1, when the display device 105 and the thin film integrated circuit 106 are mounted on different surfaces of the printed wiring board 104, leads (wiring) 10 that are electrically connected to the display device 105.
8 and a lead (wiring) 109 electrically connected to the thin film integrated circuit 106 are electrically connected through a contact hole 107.

The connection terminal 103 is directly connected to a reader / writer provided in the terminal device, and the terminal device and the IC.
A terminal for transmitting / receiving data to / from the card. FIG. 2A shows an enlarged view of the connection terminal 103 shown in FIG. FIG. 2B is an enlarged view of the thin film integrated circuit 106 shown in FIG.

FIG. 2A shows an example in which eight connection terminals 103 are provided on one surface of the printed wiring board 104, and the number of connection terminals is not limited thereto. Further, as shown in FIG. 2B, a plurality of pads 111 are provided on the other surface of the printed wiring board 104.

The pad 111 is electrically connected to the thin film integrated circuit 106 by a wire 112. Some pads 111 are electrically connected to the connection terminals 103 via contact holes 110 provided in the printed wiring board 104 and others are electrically connected to the leads 109. In some cases, the pads 111 that are electrically connected to the connection terminals 103 and the leads 109 may be provided without being electrically connected to the thin film integrated circuit 106 without providing the wires 112.

FIG. 2C is a cross-sectional view of a connection portion between the display device 105 and the lead 108. FIG.
C), the terminal 114 and the lead 108 provided in the display device 105 are electrically connected by the wire 113, and the lead 108 and the lead 109 are electrically connected through the contact hole 107. It is connected.

Note that in this embodiment, the electrical connection between the pad 111 and the thin film integrated circuit 106 is
Although the wire bonding method is used, the present invention is not limited to this. The connection is not limited to the wire bonding method, but may be connected by a flip chip method using a solder ball, or other methods may be used. Further, the electrical connection between the display device 105 and the leads 108 is not limited to the wire bonding method, and other methods may be used.

Further, the electrical connection between the connection terminal 103 and the thin film integrated circuit 106 is not limited to the mode shown in this embodiment mode. For example, the connection terminal and the thin film integrated circuit may be directly connected to each other through a contact hole without providing a pad.

Next, after describing a method for manufacturing a thin film integrated circuit, a method for manufacturing a display device will be described. Note that in this embodiment mode, two TFTs are shown as examples of the semiconductor element; however, the semiconductor element included in the thin film integrated circuit and the display device is not limited to this, and any circuit element can be used. For example, in addition to TFT, a storage element, a diode, a photoelectric conversion element, a resistance element,
A coil, a capacitive element, an inductor, etc. are typically mentioned.

First, as shown in FIG. 3A, a metal film 501 is formed over the first substrate 500 by sputtering.
Is deposited. Here, tungsten is used for the metal film 501, and the film thickness is 10 nm to 200 nm.
The thickness is preferably 50 nm to 75 nm. Note that in this embodiment, the metal film 501 is directly formed over the first substrate 500; however, the metal film is covered after the first substrate 500 is covered with an insulating film such as silicon oxide, silicon nitride, or silicon nitride oxide. 501 may be formed.

Then, after the metal film 501 is formed, the oxide film 502 is formed without being exposed to the air. Here, a silicon oxide film is formed as the oxide film 502 so as to have a thickness of 150 nm to 300 nm. Note that in the case where a sputtering method is used, film formation is also performed on an end surface of the first substrate 500. Therefore, in order to prevent the oxide film 502 from remaining on the first substrate 500 side at the time of peeling in a later process, the metal film 501 and the oxide film 502 formed on the end surface are O.
It is preferable to selectively remove by _two ashing or the like.

When the oxide film 502 is formed, pre-sputtering is performed in which plasma is generated by blocking the target and the substrate with a shutter as a pre-sputtering step. Prespatter is A
r is set to 10 sccm, O ₂ is set to a flow rate of 30 sccm, the temperature of the first substrate 500 is maintained at 270 ° C., and the deposition power is maintained at 3 kW in an equilibrium state. By pre-sputtering, a metal oxide film 503 having a very thin thickness of several nm (here, 3 nm) between the metal film 501 and the oxide film 502 is used.
Is formed. The metal oxide film 503 is formed by oxidizing the surface of the metal film 501.
Therefore, in this embodiment, the metal oxide film 503 is formed using tungsten oxide.

Note that although the metal oxide film 503 is formed by pre-sputtering in this embodiment mode, the present invention is not limited to this. For example, oxygen or an inert gas such as Ar may be added to oxygen, and the surface of the metal film 501 may be intentionally oxidized by plasma to form the metal oxide film 503.

Next, after an oxide film 502 is formed, a base film 504 is formed by a PCVD method. Here, a silicon oxynitride film is formed as the base film 504 so as to have a thickness of about 100 nm.
Then, after the base film 504 is formed, the semiconductor film 505 is formed without being exposed to the air. The thickness of the semiconductor film 505 is 25 to 100 nm (preferably 30 to 60 nm). Semiconductor film 5
05 may be an amorphous semiconductor or a polycrystalline semiconductor. As the semiconductor, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

Next, as shown in FIG. 3B, the semiconductor film 505 is crystallized by a known technique. Known crystallization methods include a thermal crystallization method using an electric furnace, a laser crystallization method using laser light, and a lamp annealing crystallization method using infrared light. Alternatively, a crystallization method using a catalytic element can be used according to the technique disclosed in Japanese Patent Application Laid-Open No. 7-130552.

Further, a semiconductor film 505 which is a polycrystalline semiconductor film is previously formed by sputtering, plasma CVD.
It may be formed by a method, a thermal CVD method, or the like.

In this embodiment mode, the semiconductor film 505 is crystallized by laser crystallization. By using a solid-state laser capable of continuous oscillation and irradiating laser light of the second to fourth harmonics of the fundamental wave, a crystal having a large grain size can be obtained. For example, typically, an Nd: YVO ₄ laser (fundamental wave 10
It is desirable to use the second harmonic (532 nm) and the third harmonic (355 nm) of 64 nm.
Specifically, laser light emitted from a continuous wave YVO ₄ laser is converted into a harmonic by a non-linear optical element to obtain laser light with an output of 10 W. There is also a method of emitting harmonics using a nonlinear optical element. Then, the semiconductor film 505 is irradiated with a laser beam that is preferably shaped into a rectangular or elliptical shape on the irradiation surface by an optical system. The energy density at this time is 0.0
About 1-100 MW / cm < ² > (preferably 0.1-10 MW / cm < ² >) is required. And a scanning speed shall be about 10-2000 cm / s, and a laser beam is irradiated toward the direction of an arrow.

Laser crystallization may be performed by irradiating a continuous wave fundamental laser beam and a continuous wave harmonic laser beam, or a continuous wave fundamental laser beam and a pulsed harmonic laser beam. You may make it irradiate with light.

Note that laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold value caused by variation in interface state density can be suppressed.

By irradiating the semiconductor film 505 with the laser light, the semiconductor film 506 with higher crystallinity is formed. Next, the semiconductor film 506 is patterned as shown in FIG.
The island-shaped semiconductor films 507 and 508 are formed, and the island-shaped semiconductor films 507 and 508 are used to form T
Various semiconductor elements represented by FT are formed. Note that in this embodiment mode, the base film 504 is used.
And the island-shaped semiconductor films 507 and 508 are in contact with each other.
An electrode, an insulating film, or the like may be formed between 4 and the island-shaped semiconductor films 507 and 508.
For example, in the case of a bottom gate TFT which is one of semiconductor elements, a gate electrode and a gate insulating film are formed between a base film 504 and island-shaped semiconductor films 507 and 508.

In this embodiment mode, a top gate TFT 5 is formed using island-shaped semiconductor films 507 and 508.
09 and 510 are formed (FIG. 3D). Specifically, a gate insulating film 511 is formed so as to cover the island-shaped semiconductor films 507 and 508. Then, a conductive film is formed over the gate insulating film 511 and patterned to form gate electrodes 512 and 513. Then, using the gate electrodes 512 and 513 or a resist film formed and patterned as a mask, an impurity imparting n-type is added to the island-shaped semiconductor films 507 and 508, and the source region, the drain region, and further LDD regions and the like are formed. Here, the TFTs 509 and 510 are n
In the case of a p-type TFT, an impurity imparting p-type conductivity is added.

The TFTs 509 and 510 can be formed through the above series of steps. Note that a method for manufacturing a TFT is not limited to the above-described steps.

Next, a first interlayer insulating film 514 is formed so as to cover the TFTs 509 and 510. Then, after forming contact holes in the gate insulating film 511 and the first interlayer insulating film 514, wirings 515 to 518 connected to the TFTs 509 and 510 through the contact holes are in contact with the first interlayer insulating film 514. Form. Then, a second interlayer insulating film 519 is formed over the first interlayer insulating film 514 so as to cover the wirings 515 to 518.

Then, a contact hole is formed in the second interlayer insulating film 519, and a terminal 520 connected to the wiring 518 through the contact hole is formed on the second interlayer insulating film 519. Note that although the terminal 520 is electrically connected to the TFT 510 through the wiring 518 in this embodiment, the form of electrical connection between the semiconductor element and the terminal 520 is not limited thereto.

Next, a protective layer 521 is formed over the second interlayer insulating film 519 and the terminal 520. Protective layer 5
21 denotes a second interlayer insulating film 519 when the second substrate is attached or peeled later.
In addition, a material that can protect the surface of the terminal 520 and can be removed after the second substrate is peeled is used. For example, the protective layer 521 can be formed by applying an epoxy-based, acrylate-based, or silicone-based resin soluble in water or alcohols over the entire surface and baking it.

In this embodiment, a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating so as to have a film thickness of 30 μm, and after exposure for 2 minutes for temporary curing, UV light is applied from the back surface. Exposure is performed for 2.5 minutes and 10 minutes from the surface for a total of 12.5 minutes, followed by main curing to form a protective layer 521 (FIG. 3E).

In addition, when laminating | stacking several organic resin, there exists a possibility that it may melt | dissolve partially at the time of application | coating or baking with the solvent currently used between organic resins, or adhesiveness may become high too much. Therefore,
When the second interlayer insulating film 519 and the protective layer 521 are both made of an organic resin soluble in the same solvent,
In order to smoothly remove the protective layer 521 in a later step, an inorganic layer is formed so as to cover the second interlayer insulating film 519 and to be sandwiched between the second interlayer insulating film 519 and the terminal 520. It is preferable to form an insulating film (SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film).

Next, the metal oxide film 503 is crystallized in order to facilitate subsequent peeling. By crystallization, the metal oxide film 503 is easily broken at the grain boundary, and brittleness can be increased. In this embodiment mode, heat treatment is performed at 420 ° C. to 550 ° C. for about 0.5 to 5 hours to perform crystallization.

Next, treatment for partially reducing the adhesion between the metal oxide film 503 and the oxide film 502 or the adhesion between the metal oxide film 503 and the metal film 501 to form a part that triggers the start of peeling. To do. Specifically, pressure is locally applied from the outside along the periphery of the region to be peeled to damage a part of the metal oxide film 503 or a portion near the interface. In this embodiment, a hard needle such as a diamond pen is pressed perpendicularly near the end of the metal oxide film 503 and moved along the metal oxide film 503 with a load applied as it is. Preferably, a scriber device is used, the pushing amount is 0.1 mm to 2 mm, and the pressure is applied. In this way, by forming a portion with reduced adhesion that triggers the start of peeling before peeling, defects in the subsequent peeling step can be reduced, leading to improved yield. .

Next, the second substrate 523 is attached to the protective layer 521 using the double-sided tape 522, and the third substrate 525 is attached to the first substrate 500 using the double-sided tape 524 (FIG. 4 (
A)). Note that an adhesive may be used instead of the double-sided tape. For example, by using an adhesive that is peeled off by ultraviolet rays, it is possible to reduce the burden on the semiconductor element when the second substrate is peeled off. The third substrate 525 prevents the first substrate 500 from being damaged in a subsequent peeling step. As the second substrate 523 and the third substrate 525, it is preferable to use a substrate having higher rigidity than the first substrate 500, such as a quartz substrate or a semiconductor substrate.

Next, the metal film 501 and the oxide film 502 are physically peeled off. The peeling starts from a region where the adhesion of the metal oxide film 503 to the metal film 501 or the oxide film 502 is partially lowered in the previous step.

A portion separated between the metal film 501 and the metal oxide film 503, a portion separated between the oxide film 502 and the metal oxide film 503, and a portion where the metal oxide film 503 itself is separated into both by peeling. Arise. Then, on the second substrate 523 side, a semiconductor element (here, TFT 509,
510) separates the first substrate 500 and the metal film 501 on the third substrate 525 side while sticking to each other. The peeling can be performed with a relatively small force (for example, a human force, a wind pressure of a gas blown from a nozzle, an ultrasonic wave, etc.). The state after peeling is shown in FIG.

Next, the printed wiring board 527 is bonded to the oxide film 502 to which the metal oxide film 503 is partially attached with an adhesive 526 (FIG. 4C). Note that in this embodiment mode, an example in which a thin film integrated circuit is mounted on a printed wiring board as a bare chip is shown; however, when it is mounted after packaging, it is mounted on an interposer.

At the time of adhesion, the adhesion force between the oxide film 502 and the printed wiring board 527 by the adhesive 526 is greater than the adhesion force between the second substrate 523 and the protective layer 521 by the double-sided tape 522. It is important to select the material of the adhesive 526 so that it is high.

Note that if the metal oxide film 503 remains on the surface of the oxide film 502, the adhesion with the printed wiring board 527 may be deteriorated. To improve the adhesion.

As the printed wiring board 527, a known material such as a ceramic substrate, a glass epoxy substrate, or a polyimide substrate can be used. In order to diffuse the heat generated in the thin film integrated circuit and the display device, it is desirable to have a high thermal conductivity of about 2 to 30 W / mK.

A pad 530 is provided on the printed wiring board 527. The pad 530 is formed, for example, by plating solder, gold or tin on copper.

Examples of the adhesive 526 include a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and various curable adhesives such as an anaerobic adhesive. Furthermore, it is preferable that the adhesive 526 has high thermal conductivity by including powder or filler made of silver, nickel, aluminum, and aluminum nitride.

Next, as shown in FIG. 5A, the double-sided tape 522 and the second substrate 523 are formed from the protective layer 521.
In order or simultaneously.

Then, as shown in FIG. 5B, the protective layer 521 is removed. Here, since a water-soluble resin is used for the protective layer 521, it is dissolved in water and removed. If the remaining protective layer 521 causes a failure, it is preferable to remove the remaining protective layer 521 by performing a cleaning process or an O ₂ plasma process on the surface after the removal.

Next, as shown in FIG. 5C, the wire bonding method is used to form the terminals 520 and the pads 5.
30 are connected by a wire 532. Mounting is completed by making electrical connection with the mount.

Note that when a thin film integrated circuit is mounted over an interposer and packaged, it can be sealed by an airtight sealing method, a resin sealing method, or the like. When using the hermetic sealing method,
Generally, sealing is performed using a case such as ceramic, metal, or glass. When using a resin sealing method, specifically, a mold resin or the like is used. Note that the thin film integrated circuit is not necessarily sealed, but the strength of the package can be increased, heat generated in the thin film integrated circuit can be dissipated, and electromagnetic noise from adjacent circuits can be blocked.

Note that in this embodiment mode, tungsten is used for the metal film 501, but the metal film is not limited to this material in the present invention. Any metal-containing material may be used as long as a metal oxide film 503 is formed on the surface and the substrate can be peeled off by crystallizing the metal oxide film 503. For example, TiN, WN, Mo or the like can be used in addition to W. Further, when these alloys are used as metal films, the optimum temperature for the heat treatment during crystallization differs depending on the composition ratio. Therefore, by adjusting the composition ratio, heat treatment can be performed at a temperature that does not interfere with the manufacturing process of the semiconductor element, and options for the process of the semiconductor element are not easily limited.

During laser crystallization, each thin film integrated circuit is formed in a region that fits in a width in a direction perpendicular to the scanning direction of the beam spot of the laser beam, so that the thin film integrated circuit can be Thus, a semiconductor film which is prevented from crossing an inferior crystallinity region (edge) formed at least and has almost no crystal grain boundary can be used for a semiconductor element in a thin film integrated circuit.

By the above manufacturing method, a remarkably thin thin film integrated circuit having a total film thickness of 1 μm to 5 μm, typically about 2 μm, can be formed. Note that the thickness of the thin film integrated circuit includes not only the thickness of the semiconductor element itself, but also the thickness of the insulating film provided between the metal oxide film and the semiconductor element, and the thickness of the interlayer insulating film that is covered after the semiconductor element is formed. And the thickness of the terminal.

  Next, a method for manufacturing a display device of the present invention will be described with reference to FIGS.

6 corresponds to a cross-sectional view of a display device 6002 mounted on a printed wiring board 6000 with an adhesive 6001. FIG. FIG. 6 illustrates an example in which a liquid crystal display device is used as the display device 6002.

In the display device 6002 illustrated in FIG. 6, first, a semiconductor film is formed in accordance with the manufacturing method illustrated in FIG. A TFT 6003 using the semiconductor film, a passivation film 6015 formed of an inorganic insulating film covering the TFT 6003, an interlayer insulating film 6005,
The pixel electrode 6004 that is electrically connected to the TFT 6003 and formed on the interlayer insulating film 6005 and the terminal 6 for the display device 6002 that is also formed on the interlayer insulating film 6005.
006 and an alignment film 6007 covering the pixel electrode 6004 are formed. And the alignment film 6
In 007, a rubbing process is performed. Further, the spacer 6008 may be formed using an insulating film before the alignment film 6007 is formed. Note that the terminal 6006 is not covered with the alignment film 6007 but is exposed.

Then, a protective film is formed over the alignment film 6007 in accordance with the manufacturing method illustrated in FIG.
In accordance with the steps shown in FIGS. 4A to 5B, the first substrate is peeled off, then mounted on a printed wiring board, and the second substrate and the protective film are removed.

Then, the counter substrate 6009 that is separately formed is aligned with the alignment film 60 using a sealant 6010.
Paste to 07. A filler may be mixed in the sealing material. Counter substrate 6009
Is a counter electrode 6012 made of a transparent conductive film on a substrate 6011 having a thickness of about several hundred μm.
Thus, an alignment film 6013 subjected to rubbing treatment is formed. In addition to these, a color filter, a shielding film for preventing disclination, and the like may be formed. Further, the polarizing plate 6014 is attached to a surface opposite to the surface where the counter electrode 6012 of the counter substrate 6009 is formed.

Note that a plastic substrate can be used as the substrate 6011. As the plastic substrate, ARTON: JSR made of norbornene resin with a polar group can be used. In addition, polyethylene terephthalate (PET), polyethersulfone (PES),
Polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PE
A plastic substrate such as I), polyarylate (PAR), polybutylene terephthalate (PBT), or polyimide can be used.

Then, liquid crystal 6025 is injected and sealed to complete the display device. The display device 6002
Mounting is completed by electrically connecting the terminal 6006 for use with the leads provided on the printed wiring board 6000 using a wire bonding method or the like.

Note that in this embodiment mode, in the manufacturing process of the display device, the first substrate is peeled and then mounted on the printed wiring board; however, the present invention is not limited to this. A substrate serving as a base of the display device may be separately prepared, and after the first substrate is peeled off, the substrate may be bonded to the base substrate. And you may make it mount the board | substrate used as this foundation on a printed wiring board. In this case, the display device can be mounted on the printed wiring board after the display device is completed. That is, in the case of a liquid crystal display device, it is possible to mount the liquid crystal display device on a printed wiring board after completing the display device by injecting and sealing liquid crystal. For example, in a light-emitting device, a light-emitting element that is a display element is difficult to perform on a printed wiring board because it includes steps such as formation of an electroluminescent layer and formation of a cathode. Therefore, in the case of a light emitting device, it is effective to mount a substrate on a printed wiring board after a display device is completed using a base substrate.

Note that the liquid crystal display device illustrated in FIG. 6 is a reflective type, but may be a transmissive type as long as a backlight can be mounted. In the case of a reflective liquid crystal display device, the power consumed to display an image can be suppressed as compared with the transmissive type. In the case of a transmissive liquid crystal display device, unlike a reflective type, it is easy to recognize an image in a dark place.

Note that the display device used in the present invention needs to have a resolution that can identify a person by a facial photograph. Therefore, if it is used instead of ID photo, at least QVGA (
It is considered that a resolution of about 320 × 240) is necessary.

When the mounting of the thin film integrated circuit and the display device on the printed wiring board is completed, the printed wiring board is sealed with a sealing material. Commonly used materials can be used for sealing the card. For example, polymer materials such as polyester, acrylic acid, polyvinyl acetate, propylene, vinyl chloride, acrylonitrile butadiene styrene resin, and polyethylene terephthalate are used. It is possible. Note that the pixel portion of the display device is exposed at the time of sealing, and in the case of a contact type IC card, the connection terminal is also exposed in addition to the pixel portion. By sealing, an IC card having an appearance as shown in FIG. 1A can be formed.

Next, one mode of a thin film integrated circuit and a display device is described. FIG. 7 shows the I of the present invention.
A block diagram of a thin film integrated circuit 201 and a display device 202 mounted on a C card is shown.

Signals are transmitted / received to / from the connection terminals 215 provided on the printed wiring board via the interface 203 provided in the thin film integrated circuit 201. In addition, a power supply voltage is supplied from the connection terminal 215 via the interface 203.

7 includes a CPU 204, a ROM 205, and a RAM 206.
, An EEPROM 207, a coprocessor 208, and a controller 209 are provided.

The CPU 204 controls all processing of the IC card, and the ROM 205 stores various programs used in the CPU 204. Coprocessor 20
Reference numeral 8 denotes a sub processor that assists the main CPU 204. The RAM 206 functions as a buffer for communication with the terminal device and is also used as a work area for data processing. The EEPROM 207 stores data input as a signal at a predetermined address.

If image data such as a facial photograph is stored in a rewritable state, EEPRO
If it is stored in the M207 and cannot be rewritten, it is stored in the ROM 205. A separate memory for storing image data may be prepared.

The controller 209 performs data processing on a signal including image data in accordance with the specification of the display device 202 and supplies the signal to the display device 202 as a video signal. In addition, the controller 209 determines the Hsync signal, Vsy, based on the power supply voltage and various signals input from the connection terminal 215.
An nc signal, a clock signal CLK, an alternating voltage (AC Cont), and the like are generated and supplied to the display device 202.

The display device 202 includes a pixel portion 210 in which a display element is provided for each pixel, and the pixel portion 21.
A scanning line driving circuit 211 for selecting a pixel provided in 0 and a signal line driving circuit 212 for supplying a video signal to the selected pixel are provided.

Note that the structures of the thin film integrated circuit 201 and the display device 202 illustrated in FIG. 7 are examples, and the present invention is not limited to this structure. The display device 202 only needs to have a function of displaying an image, and may be an active type or a passive type. Further, the thin film integrated circuit 201 includes the display device 2.
It is only necessary to have a function of supplying a signal for controlling the driving of 02 to the display device 202.

Thus, by displaying the face photograph data on the display device, it is possible to make it difficult to replace the face photograph as compared with the case where the printing method is used. Furthermore, ROM of photo data
For example, it can be prevented from being counterfeited and the security of the IC card can be further ensured. Also, if the ROM is broken if the IC card is forcibly disassembled, forgery can be prevented more reliably.

Also, if a serial number is engraved on a semiconductor film or an insulating film used in a display device, for example, even if an IC card before storing image data in a ROM is illegally passed to a third party due to theft or the like It is possible to determine the distribution route to some extent from the serial number. In this case, it is more effective to mark the serial number at a position where the display device cannot be erased unless it is disassembled to such an extent that it cannot be restored.

Since the IC card of the present invention is remarkably thin as compared with a thin film integrated circuit made of a silicon wafer, more thin film integrated circuits can be stacked and mounted in a predetermined volume of the IC card. . Therefore, the circuit scale and the memory capacity can be increased while suppressing the area of the thin film integrated circuit laid out on the printed wiring board, and the IC card can have higher functionality.

In addition, it is difficult to use a plastic substrate because it has low resistance to the temperature of heat treatment in the manufacturing process of the semiconductor element. However, in the present invention, a glass substrate or a silicon wafer having a relatively high resistance to temperature is used for a manufacturing process including heat treatment, and a semiconductor element can be transferred onto a plastic substrate after the manufacturing process is completed. A plastic substrate that is thinner than a substrate or the like can be used. And while the thickness of the display device formed on the glass substrate is at most about 2 or 3 mm, in the present invention, by using a plastic substrate, the thickness of the display device is about 0.5 mm, More desirably, the thickness can be drastically reduced to about 0.02 mm. Therefore, it can be mounted on an IC card, and the IC card can be further enhanced.

The IC card of the present invention is not limited to the contact type, and may be a non-contact type. The configuration of the non-contact type IC card of the present invention will be described with reference to FIG.

FIG. 8A shows a structure of a printed wiring board 301 sealed with a non-contact type IC card. As shown in FIG. 8A, a display device 302 and a thin film integrated circuit 303 are mounted on a printed wiring board 301, and the display device 302 and the thin film integrated circuit 303 are connected to leads 304.
It is electrically connected via. In FIG. 8A, the thin film integrated circuit 303 and the display device 302 are mounted on one surface of the printed wiring board 301; however, the present invention is not limited to this. The display device 302 may be mounted on one surface of the printed wiring board 301 and the thin film integrated circuit 303 may be mounted on the other surface.

FIG. 8B shows a configuration of the back side of the printed wiring board 301 shown in FIG. As shown in FIG. 8B, an antenna coil 305 is mounted on a printed wiring board 301. Since the antenna coil 305 can transmit and receive data to and from the terminal device in a non-contact manner using electromagnetic induction, the IC card is less susceptible to physical wear and damage than the contact type.

Although FIG. 8B illustrates an example in which the printed wiring board 301 in which the antenna coil 305 is formed is used, a separately manufactured antenna coil may be mounted on the printed wiring board 301. For example, a coil formed by winding a copper wire or the like and sandwiching the copper wire between two plastic films having a thickness of about 100 μm can be used as an antenna coil.

In FIG. 8B, only one antenna coil 305 is used for one IC card, but a plurality of antenna coils 305 may be used as shown in FIG. 8C.

Next, one mode of a thin film integrated circuit and a display device in a non-contact type IC card will be described. FIG. 9 shows the thin film integrated circuit 401 and the display device 4 mounted on the IC card of the present invention.
A block diagram of 02 is shown.

Reference numeral 400 denotes an input antenna coil, and reference numeral 413 denotes an output antenna coil. 4
03a is an input interface, and 403b is an output interface. The number of various antenna coils is not limited to the number shown in FIG.

As in the case of FIG. 7, the thin film integrated circuit 401 shown in FIG.
5, a RAM 406, an EEPROM 407, a coprocessor 408, and a controller 409. Further, the display device 402 is provided with a pixel portion 410, a scanning line driver circuit 411, and a signal line driver circuit 412.

The input power supply voltage and various signals input from the terminal device by the input antenna coil 400 are subjected to waveform shaping or DC conversion in the input interface 403a.
Supplied to various circuits. The output signal output from the thin film integrated circuit 401 is modulated by the output interface 403b and sent to the terminal device by the output antenna coil 413.

FIG. 10A shows a more detailed configuration of the input interface 403a. FIG.
) Is provided with a rectifier circuit 420 and a demodulation circuit 421. The AC power supply voltage input from the input antenna coil 400 is rectified in the rectifier circuit 420 and supplied to various circuits in the thin film integrated circuit 401 as a DC power supply voltage. In addition, various AC signals input from the input antenna coil 400 are demodulated by the demodulation circuit 421 and supplied to various circuits in the thin film integrated circuit 401.

FIG. 10B shows a more detailed configuration of the output interface 403b. FIG. 10 (B
The output interface 403b shown in FIG. 4 includes a modulation circuit 423 and an amplifier 424. Various signals input to the output interface 403b from various circuits in the thin film integrated circuit 401 are modulated in the modulation circuit 423, amplified or buffered in the amplifier 424, and then sent from the output antenna coil 413 to the terminal device. .

Note that in this embodiment mode, an example in which a coil antenna is used as a non-contact type is shown; however, a non-contact type IC card is not limited to this, and data can be transmitted and received by light using a light emitting element, an optical sensor, or the like. You may make it do.

In this embodiment mode, an example in which a power supply voltage is supplied from a reader / writer via an antenna coil or a connection terminal is described; however, the present invention is not limited to this. For example, an ultra-thin battery such as a lithium battery may be incorporated, or a solar battery may be provided.

As described above, in the present invention, since a large-sized glass substrate that is cheaper than a silicon wafer can be used, a thin film integrated circuit can be mass-produced at a lower cost and with a higher throughput. Can be suppressed. Further, since the substrate can be used repeatedly, the cost can be reduced.

Further, in the present invention, since a thin film integrated circuit can be remarkably thinned, a larger number of thin film integrated circuits having a larger circuit scale and memory capacity can be mounted in a limited volume of the IC card. In addition, the display device can be formed with a thickness that allows the display device to be mounted on an IC card having a thickness of 0.05 mm to 1 mm. Therefore, the multi-function of the IC card can be realized without hindering the reduction in size and weight.

In addition, since a thin film integrated circuit and a display device can be attached to match the shape of the printed wiring board, the degree of freedom of the shape of the IC card is increased. Therefore, for example, the IC card can be formed in a shape having a curved surface that can be attached to a cylindrical bin or the like.

Examples of the present invention will be described below.

Example 1
In this embodiment, an electrical connection method between an interposer mounted on a contact type IC card and a thin film integrated circuit will be described.

FIG. 11A is a perspective view showing a cross-sectional structure of a thin film integrated circuit connected to an interposer by a wire bonding method. Reference numeral 601 corresponds to an interposer, and 602 corresponds to a thin film integrated circuit. The thin film integrated circuit 602 is mounted on the interposer 601 with an adhesive 604 for mounting.
Mounted by.

In addition, in the interposer 601 illustrated in FIG. 11A, a connection terminal 605 is provided on the back surface side of the surface on which the thin film integrated circuit 602 is mounted. And interposer 60
The pad 606 provided in 1 is electrically connected to the connection terminal 605 through a contact hole provided in the interposer 601.

In this embodiment, the connection terminal 605 and the pad 606 are directly connected via a contact hole. For example, a multi-layered wiring is provided inside the interposer 601.
You may make it electrically connect through this wiring.

In FIG. 11A, the thin film integrated circuit 602 and the pad 606 are electrically connected by a wire 607. FIG. 11B is a cross-sectional view of the package illustrated in FIG. The thin film integrated circuit 602 is provided with a semiconductor element 609, and a thin film integrated circuit pad 608 is provided on the side of the thin film integrated circuit 602 opposite to the side where the interposer 601 is provided. The pad 608 is electrically connected to the semiconductor element 609. The thin film integrated circuit pad 608 is connected to the pad 606 provided in the interposer 601 by a wire 607.

Next, FIG. 11C is a cross-sectional view of a thin film integrated circuit connected to an interposer using a flip chip method. In the package illustrated in FIG. 11C, a solder ball 627 is provided on the thin film integrated circuit 622. The solder ball 627 is provided on the interposer 621 side of the thin film integrated circuit 622 and is connected to a pad 628 similarly provided in the thin film integrated circuit 622. Then, a semiconductor element 629 provided in the thin film integrated circuit 622 is used.
Is connected to the pad 628. In the case where a TFT is used as the semiconductor element 629, the pad 628 may be formed of the same conductive film as the gate electrode of the TFT.

The solder ball 627 is connected to a pad 626 provided on the interposer 621. In FIG. 11C, an underfill 624 is provided so as to fill a gap between the solder balls 627. The connection terminal 625 of the interposer 621 is provided on the side opposite to the side on which the thin film integrated circuit 622 of the interposer 621 is mounted. The pad 626 provided on the interposer 621 is connected to the interposer 6.
The connection terminal 625 is electrically connected through a contact hole provided in 25.

In the case of the flip chip method, even if the number of pads to be connected is increased, a relatively wide pitch between pads can be secured as compared with the wire bonding method, so that a thin film integrated circuit having a large number of terminals can be connected. It is suitable.

Next, FIG. 11D is a cross-sectional view of thin film integrated circuits which are stacked using a flip chip method. In FIG. 11D, two thin film integrated circuits 630 and 63 are formed over the interposer 633.
1 is laminated. The pads 636 provided on the interposer 633 are electrically connected to the thin film integrated circuit 630 by using solder balls 634. Further, electrical connection between the thin film integrated circuit 630 and the thin film integrated circuit 631 is also performed by the solder ball 632.
It is done using.

11A to 11D show an example in which the thin film integrated circuit is mounted on the interposer as a bare chip, but in the present invention, the thin film integrated circuit may be mounted after being packaged. Also in this case, the electrical connection between the thin film integrated circuit and the interposer may be a solder ball, a wire, or a combination thereof.

In addition, various methods, such as thermocompression bonding and the thermocompression bonding which applied the vibration by an ultrasonic wave, can be used for the connection of a solder ball and a pad. Note that the underfill may fill the gaps between the solder balls after the pressure bonding so as to increase the mechanical strength of the connection portion and the efficiency of diffusion of heat generated in the package. The underfill is not necessarily used, but it is possible to prevent a connection failure from occurring due to a stress caused by a thermal expansion coefficient mismatch between the interposer or the interposer and the thin film integrated circuit. When crimping by applying ultrasonic waves,
Connection failure can be suppressed as compared with the case of simply thermocompression bonding. In particular, it is effective when the number of connection points between the thin film integrated circuit and the interposer or the interposer is more than 100.

(Example 2)
In this embodiment, an example of a specific usage method when the IC card of the present invention is used as a bank cash card will be described.

As shown in FIG. 12, when opening an account in a financial institution such as a bank, image data of a depositor's face photo is stored in a ROM provided in a thin film integrated circuit of a cash card. By storing face photo data in the ROM, forgery such as face photo replacement can be prevented. Then, by using the cash card to the depositor, the use of the cash card is started.

Cash cards are used for transactions at ATMs (automatic cash deposit and withdrawal machines) or counters. When a transaction such as withdrawal, deposit, or transfer is performed, details such as the deposit balance and transaction date and time are stored in the EEPROM provided in the thin film integrated circuit of the cash card.

After this transaction, details such as the deposit balance and transaction date and time may be displayed in the pixel portion of the cash card, and it may be programmed so that the display disappears after a certain period of time. Then, at the time of this transaction, for example, all payments made without using a cash card, such as debiting by automatic transfer, may be recorded in the IC card and confirmed in the pixel unit.

In addition, a bank cash card such as a debit card (R) is used, and payment is made directly from an account without exchange of cash. The balance information may be extracted and the balance displayed on the pixel portion of the IC card. When using the terminal device to display the balance, there is a fear that it may be seen by a third party from behind, but by displaying the balance on the pixel portion of the IC card, the IC card user can see it without being seen You can check your balance. And
Since you can check the balance using the terminal device used for payment at the store,
In order to confirm the balance before settlement, it is possible to eliminate the trouble of making a balance inquiry and book entry at a bank counter or ATM.

The IC card of the present invention is not limited to a cash card. The IC card of the present invention may be used as a commuter pass or a prepaid card so that the balance is displayed on the pixel portion.

(Example 3)
In this embodiment, a case where a plurality of liquid crystal display devices are manufactured from one substrate will be described.

FIG. 13A is a top view of a substrate in the case where a plurality of liquid crystal display devices are manufactured over the first substrate 1301 at the same time. A sealant 1302 laid out so as to surround a region where liquid crystal is sealed is formed on the first substrate 1301 on which the alignment film is formed. Then, a liquid crystal 1303 is dropped in a region surrounded by the sealing material 1302.

FIG. 13B is a cross-sectional view taken along dashed line AA ′ in FIG. As shown in FIG. 13B, the liquid crystal 1303 is dropped in a region surrounded by the sealant 1302. Next, as illustrated in FIG. 13C, the counter substrate 1304 is attached and pressure-bonded so that the liquid crystal 1303 is sealed in the region surrounded by the sealant 1302.

After the counter substrate is pressed, the first substrate 1301 is peeled and removed as shown in FIG. 13D, and then a plastic substrate 1305 is attached as shown in FIG. 13E. Then, dicing is performed at the position of the broken line, and the display devices are separated from each other as shown in FIG.

In this embodiment, the case of a liquid crystal display device has been described. However, the present invention is not limited to this,
A plurality of light emitting devices and other display devices can be manufactured at the same time.

FIG. 14 is a cross-sectional view of the liquid crystal display device of this example. In a liquid crystal display device illustrated in FIG. 14A, a columnar spacer 1401 is provided in a pixel, and the columnar spacer 1401 improves adhesion between the counter substrate 1402 and the element-side substrate 1403. This
It is possible to prevent the semiconductor element other than the region overlapping with the sealant from being left on the first substrate side when the first substrate is peeled off.

FIG. 14B is a cross-sectional view of a liquid crystal display device using nematic liquid crystal, smectic liquid crystal, ferroelectric liquid crystal, or PDLC (polymer dispersed liquid crystal) in which they are contained in a polymer resin. By using the PDLC 1404, the counter substrate 1402 and the element-side substrate 140 are used.
3 can be improved, and semiconductor elements other than the region overlapping with the sealing material when the first substrate is peeled off can be prevented from remaining on the first substrate side.

The figure which shows the external view of the IC card of this invention, and an internal structure. The enlarged view of a connection terminal and a thin film integrated circuit, and the enlarged view of the connection part of a display apparatus and a printed wiring board. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. 10A and 10B illustrate a method for manufacturing a semiconductor element. Sectional drawing of a liquid crystal display device. The block diagram of a thin film integrated circuit and a display apparatus. The figure which shows the internal structure of the IC card of this invention. The block diagram of a thin film integrated circuit and a display apparatus. The block diagram which shows the structure of the interface for input / output. Sectional drawing which shows the structure of a thin film integrated circuit. The figure which shows the utilization method of IC card of this invention. 4A and 4B illustrate a method for manufacturing a display device of the present invention. Sectional drawing of a liquid crystal display device.

Claims (17)

A substrate, a thin film integrated circuit, a display device, and a terminal;
The thin film integrated circuit is provided on one surface of the substrate via a first adhesive,
On the other surface of the substrate, the terminal electrically connected to the thin film integrated circuit through a contact hole provided in the substrate, and the display device are provided via a second adhesive,
An IC card, wherein driving of the display device is controlled by the thin film integrated circuit. A substrate, a thin film integrated circuit, a display device, and an antenna;
The thin film integrated circuit is provided on one surface of the substrate via a first adhesive,
On the other surface of the substrate, the antenna and the display device electrically connected to the thin film integrated circuit through a contact hole provided in the substrate are provided through a second adhesive,
An IC card, wherein driving of the display device is controlled by the thin film integrated circuit. In claim 1 or claim 2,
An IC card, wherein a semiconductor element used in the thin film integrated circuit and the display device is formed using a polycrystalline semiconductor film. A substrate, a plurality of stacked thin film integrated circuits, a display device, and a terminal;
A plurality of stacked thin film integrated circuits are provided on one surface of the substrate via a first adhesive;
On the other surface of the substrate, the terminal electrically connected to the stacked thin film integrated circuits through a contact hole provided in the substrate, and the display device have a second adhesive. Provided through
The IC card, wherein driving of the display device is controlled by the plurality of stacked thin film integrated circuits. A substrate, a plurality of stacked thin film integrated circuits, a display device, and an antenna;
A plurality of stacked thin film integrated circuits are provided on one surface of the substrate via a first adhesive;
On the other surface of the substrate, the antenna and the display device electrically connected to the plurality of stacked thin film integrated circuits through a contact hole provided in the substrate via a second adhesive Provided,
The IC card, wherein driving of the display device is controlled by the plurality of stacked thin film integrated circuits. In claim 4 or claim 5,
The IC card, wherein the plurality of stacked thin film integrated circuits and the semiconductor elements used in the display device are formed using a polycrystalline semiconductor film. In any one of Claims 4 thru | or 6,
An IC card, wherein a thickness of each of the stacked thin film integrated circuits is 1 μm or more and 5 μm or less. In any one of Claim 1 thru | or 7,
The IC card has a thickness of 0.05 mm to 1 mm. In any one of Claims 1 thru | or 8,
The IC card is a printed wiring board. In any one of Claims 1 thru | or 9,
The IC card, wherein the display device is a liquid crystal display device or a light emitting device. In any one of Claims 1 thru | or 10,
2. The IC card according to claim 1, wherein the display device is a passive matrix type or an active matrix type. In any one of Claims 1 thru | or 11,
The IC card has a battery. A bookkeeping system comprising the IC card according to any one of claims 1 to 12 and a terminal device,
The IC card has means for recording in the thin film integrated circuit the amount of the transaction performed at the terminal device, the date and time of the transaction or the deposit balance,
The bookkeeping system, wherein the recorded amount of the transaction, the date and time of the transaction, or the deposit balance are displayed on the display device. A metal film, a metal oxide film, an insulating film, and a semiconductor film are sequentially stacked on the first substrate and the second substrate,
Crystallizing the semiconductor film formed on each of the first substrate and the second substrate;
Forming a thin film integrated circuit on the first substrate and a display device on the second substrate using the crystallized semiconductor films of the first substrate and the second substrate,
A third substrate is bonded using a first adhesive so as to face the first substrate across the thin film integrated circuit, and the second substrate is sandwiched between the display device. The fourth substrate is bonded using the second adhesive so as to face each other,
By separating the metal oxide film into the metal film side and the insulating film side, the first substrate and the second substrate are removed,
The side on which the insulating film is formed of the thin film integrated circuit is bonded to one surface of a fifth substrate using a third adhesive,
The side of the display device on which the insulating film is formed is bonded to the other surface of the fifth substrate using a fourth adhesive,
By removing the first adhesive and the second adhesive, the third substrate and the fourth substrate are removed,
Electrically connecting the thin film integrated circuit and a terminal provided on the other surface of the fifth substrate through a contact hole provided in the fifth substrate;
A method for manufacturing an IC card, wherein the thin film integrated circuit and the display device are electrically connected. A metal film, a metal oxide film, an insulating film, and a semiconductor film are sequentially stacked on the first substrate and the second substrate,
Crystallizing the semiconductor film formed on each of the first substrate and the second substrate;
Forming a thin film integrated circuit on the first substrate and a display device on the second substrate using the crystallized semiconductor films of the first substrate and the second substrate,
A third substrate is bonded using a first adhesive so as to face the first substrate across the thin film integrated circuit, and the second substrate is sandwiched between the display device. The fourth substrate is bonded using the second adhesive so as to face each other,
By separating the metal oxide film into the metal film side and the insulating film side, the first substrate and the second substrate are removed,
The side on which the insulating film is formed of the thin film integrated circuit is bonded to one surface of a fifth substrate using a third adhesive,
The side of the display device on which the insulating film is formed is bonded to the other surface of the fifth substrate using a fourth adhesive,
By removing the first adhesive and the second adhesive, the third substrate and the fourth substrate are removed,
Electrically connecting the thin film integrated circuit and the antenna provided on the other surface of the fifth substrate through a contact hole provided in the fifth substrate;
A method for manufacturing an IC card, wherein the thin film integrated circuit and the display device are electrically connected. In claim 14 or claim 15,
The method for manufacturing an IC card, wherein the fifth substrate is a printed wiring board. In any one of Claims 14 thru | or 16,
The method for manufacturing an IC card, wherein the display device is a liquid crystal display device or a light emitting device.

Images