JP2007169729A - Vapor deposition apparatus, vapor deposition method, and method for manufacturing solid-state detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which traps a substance produced by bumping, and stably forms a film having a sufficient thickness, and to provide a method therefor. <P>SOLUTION: The vapor deposition apparatus 1 is directed at heating a vapor deposition material 5 to vaporize it and vapor-depositing the vapor deposition material 5 onto a substrate 3, and comprises: a vapor deposition boat 6 having a main body 11 for accommodating the vapor deposition material 5 and a trapping member 12 which is arranged over the vapor deposition material 5 and traps the substance produced by the bumping of the vapor deposition material 5; and a heating means 7 for heating the vapor deposition boat 6. The vapor deposition apparatus 1 is also structured such that a temperature of the trapping member 12 can be higher than that of the vapor deposition material 5 in a vapor deposition operation. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and method for performing vacuum heating vapor deposition using a vapor deposition boat, and a method for manufacturing a solid state detector using the vapor deposition apparatus.

  2. Description of the Related Art Conventionally, a deposition apparatus that uses a deposition boat is widely known as a deposition apparatus that deposits a deposition material in a vacuum processing chamber to form a film on a substrate. In such an apparatus, a vapor deposition material is accommodated in a substantially boat type vapor deposition boat, and the vapor deposition material is evaporated by heating the vapor deposition boat by resistance heating or external heating.

By the way, in the vapor deposition process, dumped particles may evaporate at a time due to bumping of the vapor deposition material, and may adhere to the substrate to form a protruding defect. In view of this, a vapor deposition boat has been proposed in which a metal mesh is provided on a container for accommodating a vapor deposition material and a film is formed by vapor passing through the metal mesh (see, for example, Patent Document 1). In addition, a vapor deposition boat has been proposed that captures substances generated by bumping by arranging a plurality of covers having holes in the upper part of the main body and considering the positions of the holes in each cover (see, for example, Patent Document 2).
Japanese Patent Laid-Open No. 7-126838 JP-A-5-339709

  However, in the vapor deposition boat provided with a plurality of perforated covers such as the above metal mesh, the substances generated by bumping that cause defects are captured, but other normal vapor deposition materials are also used for the metal mesh and the cover. Had been caught by. For this reason, clogging of the mesh and clogging of the holes in the cover become remarkable, which hinders vapor deposition of the vapor deposition material onto the substrate, resulting in a problem that a sufficient film thickness cannot be obtained.

  Therefore, an object of the present invention is to provide a vapor deposition apparatus and method capable of capturing a substance generated by bumping and ensuring a sufficient film thickness stably. Another object of the present invention is to provide a method for manufacturing a solid state detector capable of stably forming a photoconductive layer having a sufficient thickness.

  The vapor deposition apparatus of the present invention is a vapor deposition apparatus that heats a vapor deposition material and deposits the vaporized vapor deposition material on a substrate. The vapor deposition apparatus is disposed above the vapor deposition material and a main body that houses the vapor deposition material. A vapor deposition boat having a capture member that captures a substance generated by bumping; and a heating unit that heats the vapor deposition boat, so that the temperature of the capture member is equal to or higher than the temperature of the vapor deposition material during vapor deposition. It is characterized by comprising.

  For example, the capturing member may be formed of a porous member that restricts the size of a substance that passes therethrough, or may be formed of a baffle plate that blocks the vaporized deposition material from going straight to the substrate. Specifically, for example, a net can be used as the porous member. Moreover, the shape of the hole of the porous member is not limited to a circle or a square, and may be a long and narrow hole as long as the diameter in one direction is a predetermined size or less.

  When the trapping member is made of a porous member, the vapor deposition boat preferably has a heating member that is disposed in proximity to the porous member and heats the porous member. In this case, the main body, the porous member, and the heating member are heated. The temperature member is made of metal and is integrally energized and heated by a heating means. Regarding the heat generation amount Wr due to resistance heating and the radiant heat amount Ws from the surface, (Wr−Ws in the heating member)> (main body (Wr-Ws).

  Here, “integrated energization heating” refers to heating the vapor deposition boat by resistance heating by supplying current to the main body, the porous member and the heating member with one power source, for example. And the voltage applied to each heating member becomes equal. In this case, the heat generation amount Wr due to resistance heating in each of the main body and the heating member is based on the resistance of each member, and the heat generation amount Wr decreases as the resistance increases. The amount of radiant heat Ws from the surface of each of the main body and the heating member is based on the surface area and emissivity (radiation rate) of each member.

  Alternatively, the trapping member is arranged inside the main body, and during vapor deposition, the heating means externally heats the vapor deposition boat with a temperature distribution so that the temperature of the trapping member is equal to or higher than the temperature of the vapor deposition material. Also good.

  As the vapor deposition material, for example, Se or a Se—As alloy can be used.

  Also, the vapor deposition method of the present invention is vapor-deposited using a vapor deposition boat having a main body in which the vapor deposition material is accommodated and a capturing member that is disposed above the vapor deposition material and captures a substance generated by bumping of the vapor deposition material. The vapor deposition method is to perform vapor deposition by setting the temperature of the capturing member to be equal to or higher than the temperature of the vapor deposition material.

  Furthermore, the manufacturing method of the solid state detector of the present invention includes an electrostatic recording unit including a photoconductive layer that exhibits conductivity when irradiated with recording light, and is irradiated with recording light carrying image information. In the method of manufacturing a solid state detector that records the image information and outputs an image signal representing the recorded image information, the photoconductive layer is formed using the vapor deposition apparatus described above. It is.

  Here, “recording light” includes radiation and light such as fluorescence converted from the radiation.

  In a conventional vapor deposition boat having a wire mesh and a cover, not only the substances generated by bumping but also the vapor deposition material during normal evaporation is captured by the wire mesh and cover because the wire mesh and cover are at a lower temperature than the vapor deposition material. This is thought to be due to the evaporation material being liquefied or solidified when passing through a small diameter path such as a mesh or a hole in the cover while the evaporation material is evaporating.

  According to the vapor deposition apparatus and method of the present invention, when vapor deposition is performed, the temperature of the trapping means is equal to or higher than the temperature of the vapor deposition material. The film is not liquefied or solidified and is not captured by the capturing means, and the film can be formed on the substrate through the capturing means. Therefore, clogging of the mesh and clogging of the holes in the cover are reduced, and a sufficient film thickness can be secured stably. Further, wasteful vapor deposition material can be reduced due to clogging of the mesh and clogging of the holes in the cover.

  In the case where the capturing member is made of a porous member that limits the size of a substance that passes therethrough, the capturing member can be simply configured using a net or a member provided with holes in a plate. Further, by reducing the size of the holes, it is possible to capture substances generated by bumping with a smaller diameter.

  The vapor deposition boat has a heating member that is disposed in proximity to the porous member and heats the porous member, and the main body, the porous member, and the heating member are made of metal, and the heating The heating is integrally conducted by the means, and the heating value Wr due to resistance heating and the radiant heat amount Ws from the surface are set such that (Wr−Ws in the heating member)> (Wr−Ws in the main body). If the temperature is set to, the heating member can be heated to a higher temperature than the main body. And since the heating member and the porous member are arranged close to each other, the temperature of the porous member can be made higher than the temperature of the vapor deposition material accommodated inside the main body by heating the porous member with the heating member. . In this way, the temperature of the porous member can be made higher than the temperature of the vapor deposition material with a simple apparatus configuration, by simply energizing and heating without integrally controlling the temperature of the main body and the porous member. Can ensure a stable film thickness.

  When the porous member is disposed inside the main body and the heating means externally heats the vapor deposition boat with a temperature distribution so that the temperature of the porous member is equal to or higher than the temperature of the vapor deposition material. The temperature of the porous member can be made higher than the temperature of the vapor deposition material without individually controlling the temperature of the main body and the porous member.

When the capturing member is made of a baffle plate that blocks the evaporated vapor deposition material from going straight to the substrate, it is possible to capture more substances generated by bumping by increasing the number of steps of the baffle plate. Further, when the baffle plate is disposed inside the main body, and the heating means externally heats the vapor deposition boat with a temperature distribution so that the temperature of the baffle plate is equal to or higher than the temperature of the vapor deposition material, The temperature of the baffle plate can be made equal to or higher than the temperature of the vapor deposition material without separately controlling the temperature of the main body and the baffle plate. Since the photoconductive layer is formed using a vapor deposition apparatus that can ensure a stable film thickness, stable productivity can be obtained.

  Hereinafter, embodiments of the vapor deposition apparatus and method of the present invention will be described in detail with reference to the drawings. The vapor deposition apparatus of the present invention forms a film on a substrate by heating and evaporating a vapor deposition material and depositing the vapor deposition material on the substrate. FIG. 1 is a schematic diagram showing a schematic configuration of a vapor deposition apparatus according to a first embodiment of the present invention. The vapor deposition apparatus 1 includes a processing chamber 2, a substrate holder 4 that is provided on the upper surface inside the processing chamber 2 and holds the substrate 3, a vapor deposition boat 6 that stores the vapor deposition material 5, and a heating unit that heats the vapor deposition boat 6. The power supply 7 is provided. In the present embodiment, an example in which the vapor deposition boat 6 is heated by resistance heating to evaporate the sublimable vapor deposition material 5 will be described.

  The vapor deposition boat 6 is detachably fixed to two support members 8 standing upright on the bottom surface of the processing chamber 2 using screws or the like. The lower end of the support member 8 is electrically connected to a power source 7 provided outside the processing chamber 2. The support member 8 is made of metal and supports the vapor deposition boat 6 and also serves as an electrode.

  FIG. 2 shows an exploded perspective view of the vapor deposition boat 6. The vapor deposition boat 6 includes a main body 11 in which a recess 11 a for accommodating the vapor deposition material 5 is formed, a mesh plate 12 disposed above the vapor deposition material 5, and a mesh plate 12 disposed above the mesh plate 12. It consists of a plate 13 and these are all made of metal. In the present embodiment, the main body 11 and the upper plate 13 are made of the same material. As an example, the size of the vapor deposition boat 6 is 4 cm in the longitudinal direction and 1.5 cm in the lateral direction.

  As shown in FIG. 2, the main body 11 has flat ends at both ends in the longitudinal direction, and a recess 11a is formed at the center. The mesh plate 12 is composed of a mesh having a mesh structure, and the mesh is, for example, 50 μm. The net plate 12 is a porous member that limits the size of a substance that passes therethrough, and more specifically, functions as a capturing member that captures a substance generated by bumping of the vapor deposition material 5.

  The upper plate 13 has a configuration in which a plurality of holes 13a larger than the mesh of the mesh plate 12 are provided in a plate-like member. The upper plate 13 is provided as a heating member for heating the mesh plate 12. The upper plate 13 is thicker than the main body 11. Further, the upper plate 13 and the main body 11 are set such that (Wr−Ws in the upper plate)> (Wr−Ws in the main body) with respect to the heat generation amount Wr due to resistance heating and the radiant heat amount Ws from the surface. Specifically, it can be realized by selecting the material and shape in consideration of the resistance, surface area, and emissivity (emissivity) of the upper plate 13 and the main body 11 so as to satisfy the above formula. In addition, the number and shape of the holes provided in the upper plate 13 can be arbitrarily set. For example, the number may be one.

  At the time of vapor deposition, as shown in FIG. 1, the main body 11, the net plate 12, and the upper plate 13 are stacked and integrated in this order in the longitudinal direction, and both ends in the longitudinal direction are fixed to the two support members 8 respectively. Is done. At this time, the mesh plate 12 is in contact with the upper plate 13 on the upper surface and is in contact with the main body 11 on the lower surfaces of both ends. In the present embodiment, the mesh plate 12 and the upper plate 13 are in contact with each other, but if the upper plate 13 can heat the mesh plate 12 so that the temperature of the mesh plate 12 is equal to or higher than the temperature of the vapor deposition material, There may be a gap between them.

  Next, operation | movement of the vapor deposition apparatus 1 is demonstrated. When the vapor deposition boat 6 containing the vapor deposition material 5 is fixed to the support member 8 and a current is passed through the support member 8 by the power source 7 in a state where the inside of the processing chamber 2 is evacuated, the main body 11, the net plate 12, and the upper plate 13. Are integrally energized and heated. With the heating of the vapor deposition boat 6, the vapor deposition material 5 inside the recess 11 a is also heated, and the vaporized vapor deposition material 5 passes through the mesh of the mesh plate 12, reaches the substrate 3 through the holes 13 a of the upper plate 13, and forms a film. Is formed. Actually, a shutter (not shown) is provided between the vapor deposition boat 6 and the substrate 3, and this shutter is closed at the initial stage of heating, and the shutter is opened when the heating proceeds and reaches a steady state. Then, vapor deposition is performed.

  In the heating of the vapor deposition boat 6, the temperatures of the upper plate 13 and the main body 11 are related to the difference between the amount of heat generated by resistance heating Ws and the amount of radiation heat Ws from the surface. Since the upper plate 13 and the main body 11 are set as described above, the upper plate 13 is hotter than the main body 11. Since the upper plate 13 and the mesh plate 12 are in contact with each other, the mesh plate 12 is heated by the upper plate 13 and becomes substantially the same temperature as the upper plate 13. The vapor deposition material 5 inside the main body 11 has substantially the same temperature as the main body 11. Therefore, in the steady state, the temperature of the mesh plate 12 is equal to or higher than the temperature of the vapor deposition material 5. That is, in the present embodiment, by providing the upper plate 13 set as described above, the net plate 12 and the main body 11 are not individually controlled in temperature, and only one power source is used. The temperature of the plate 12 is set to be equal to or higher than the temperature of the vapor deposition material 5.

  Therefore, the evaporation material 5 being evaporated is not liquefied or solidified when passing through the mesh plate 12 and is not captured by the mesh plate 12, and can pass through the mesh plate 12 to form a film. On the other hand, a substance generated by bumping of the vapor deposition material 5 can be captured by the mesh plate 12 if it is larger than the mesh size.

As an example, a vapor deposition boat having the above-described configuration in which the material of the main body 11 and the upper plate 13 is tantalum, the material of the mesh plate 12 is stainless steel, and the mesh size of the mesh plate 12 is 50 μm is used. An experiment was performed in which vapor deposition was performed using a system alloy (90%: 10%). At this time, the temperature of the vapor deposition material 5 was 440 ° C., the temperature of the mesh plate 12 was 445 ° C., and the obtained film thickness was 0.2 μm. Further, the number of protruding defects formed by the particles generated by bumping attached to the film was 0 / cm ² .

As a comparative example, in an experiment in which the upper plate 13 was removed and vapor deposition was performed using the same amount of vapor deposition material, the temperature of the mesh plate 12 was 430 ° C. or less, and the film thickness obtained at this time was 0.1 μm. . As another comparative example, in an experiment in which vapor deposition is performed using the same amount of vapor deposition material without using the upper plate 13 and the mesh plate 12, there are five protruding defects formed by particles generated by bumping on the film. / Cm ² .

  According to the above experimental results, when the mesh plate 12 was made higher in temperature than the vapor deposition material 5, the film thickness could be doubled compared to the case where the mesh plate 12 was lower in temperature than the vapor deposition material 5. Moreover, the effect which prevents a protrusion-shaped defect with the net | network board 12 was also confirmed.

  In a vapor deposition boat having a mesh plate, the smaller the mesh is, the more substances generated by bumping can be captured, and the protruding defects can be reduced. In conventional vapor deposition boats where the temperature of the mesh plate is lower than that of the vapor deposition material, the normal vapor deposited material is also captured by the mesh plate. The thickness will decrease. On the other hand, according to the configuration of the present embodiment, since the temperature of the mesh plate is equal to or higher than the temperature of the vapor deposition material, the normal evaporated vapor deposition material is not captured by the mesh plate, and the mesh can be further reduced. It becomes. In this case, since a smaller substance can be captured, protrusion defects can be reduced, and an improvement in film quality can be expected. In addition, as a mesh | network size, it is thought that 0.1 micrometer-50 micrometers are preferable, for example.

  Next, a vapor deposition apparatus and method according to the second embodiment of the present invention will be described. FIG. 3 is a schematic diagram showing a schematic configuration of a vapor deposition apparatus according to the second embodiment of the present invention. The vapor deposition apparatus 201 of this embodiment differs in the structure of a vapor deposition boat and the structure which heats this vapor deposition boat compared with the vapor deposition apparatus 1 of 1st Embodiment. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  The vapor deposition apparatus 201 includes a processing chamber 2, a substrate holder 4 that is provided on the upper surface inside the processing chamber 2 and holds the substrate 3, a vapor deposition boat 26 that stores the vapor deposition material 25, and a predetermined position around the vapor deposition boat 26. Are provided with a plurality of lamp heaters 27, and a controller 28 for controlling the plurality of lamp heaters 27. The plurality of lamp heaters 27 and the controller 28 are heating means for heating the vapor deposition boat 26 to the outside. In addition, illustration of the supporting member of the vapor deposition boat 26 is abbreviate | omitted in FIG. In FIG. 3, only one lamp heater 27 is attached to avoid complication of the drawing. In the present embodiment, an example in which the vapor deposition boat 26 is heated by the lamp heater 27 to evaporate the meltable vapor deposition material 25 will be described.

  FIG. 4 shows a perspective view of the vapor deposition boat 26. The vapor deposition boat 26 has a box shape with a U-shaped cross section perpendicular to the longitudinal direction, and a main body 21 in which the vapor deposition material 25 is accommodated at the bottom, and a net disposed inside the main body 21 and above the vapor deposition material 25. And a plate 22. As an example, the size of the vapor deposition boat 26 is 20 to 30 cm in the longitudinal direction and 5 cm in the lateral direction. The mesh plate 22 is made of a mesh having a mesh structure, and the mesh is, for example, 50 μm. The net plate 22 is a porous member that limits the size of a substance that passes therethrough, and more specifically, functions as a capturing member that captures a substance that is generated when the vapor deposition material 25 is heated and bumped.

  FIG. 3 is a cross-sectional view of the vapor deposition boat 26 as seen from the longitudinal direction. In the direction shown in FIG. 3, one lamp heater 27 is arranged near the bottom of the vapor deposition boat 26, one left and one right at a position slightly below the upper end, and one left and right at a position approximately halfway between these. Has been. That is, the lamp heater 27 is arranged at three positions in the height direction of the vapor deposition boat 26: high, middle, and low. The mesh plate 22 is located in the vicinity of the lamp heater 27 at a high position and at a height slightly below the lamp heater 27. Further, the middle and low lamp heaters 27 are positioned so as to surround the vapor deposition material 25. The lamp heater 27 is configured to be controllable by the controller 28 for each of the high, middle, and low positions. The control of the lamp heater 27 is not limited to the above example, and all the lamp heaters 27 may be configured to be individually controllable.

  Next, operation | movement of the vapor deposition apparatus 201 is demonstrated. The vapor deposition boat 26 containing the vapor deposition material 25 is installed in the processing chamber 2, and the vapor deposition boat 26 is heated by the lamp heater 27 in a state where the processing chamber 2 is evacuated. 25 is also heated. The evaporated vapor deposition material 25 reaches the substrate 3 through the mesh of the mesh plate 22, and a film is formed. Actually, a shutter (not shown) is provided between the vapor deposition boat 26 and the substrate 3, and this shutter is closed at the initial stage of heating, and the shutter is opened when the heating proceeds and reaches a steady state. Then, vapor deposition is performed.

  At the time of the heating, the controller 28 controls the lamp heater 27 so that the temperature of the mesh plate 22 is equal to or higher than the temperature of the vapor deposition material 25, and heats the vapor deposition boat 26 with a temperature distribution in the height direction.

As an example, a vapor deposition boat having the above-described configuration in which the main body 21 and the mesh plate 22 are made of stainless steel and the mesh size of the mesh plate 22 is 50 μm was used, and an experiment was performed for vapor deposition using Se as the deposition material 25. At this time, the temperature of the vapor deposition material 25 was 250 ° C., the temperature of the mesh plate 22 was 256 ° C., and the obtained film thickness was 200 μm. Further, the number of protruding defects formed by the particles generated by bumping being attached to the film was 3 / cm ² .

As a comparative example, in an experiment in which the net plate 22 is arranged at the height of the upper surface of the main body 21 and vapor deposition is performed using the same amount of vapor deposition material, the temperature of the vapor deposition material 25 is 250 ° C. and the temperature of the net plate 22 is 240 ° C. The film thickness obtained at this time was 190 μm. As another comparative example, in an experiment in which vapor deposition is performed using the same amount of vapor deposition material without using the mesh plate 22, the number of protrusion defects formed by bumps generated by bumping on the film is 50 / cm ² . there were.

  According to the above experimental results, when the mesh plate 22 was made higher in temperature than the vapor deposition material 25, the film thickness could be increased compared to the case where the mesh plate 22 was lower in temperature than the vapor deposition material 25. Moreover, the effect which prevents the projection-like defect by bumping by the net | network board 22 was also confirmed. Also in the present embodiment, as in the first embodiment, since the normal evaporated evaporation material 25 is not captured by the mesh plate 22, the mesh can be further reduced, and a smaller substance can be captured and the projecting defect. Can be expected to improve the quality of the film.

  Next, a vapor deposition apparatus and method according to the third embodiment of the present invention will be described. FIG. 5 is a schematic diagram showing a schematic configuration of a vapor deposition apparatus according to the third embodiment of the present invention. The vapor deposition apparatus 301 of this embodiment is obtained by replacing the vapor deposition boat 26 of the vapor deposition apparatus 201 of the second embodiment with a vapor deposition boat 36. Hereinafter, the same components as those of the second embodiment are denoted by the same reference numerals and description thereof is omitted.

  The vapor deposition apparatus 301 includes a processing chamber 2, a substrate holder 4 that is provided on the upper surface inside the processing chamber 2 and holds the substrate 3, a vapor deposition boat 36 that stores the vapor deposition material 25, and a predetermined position around the vapor deposition boat 36. Are provided with a plurality of lamp heaters 27 and a controller 28 for individually controlling the plurality of lamp heaters 27. In addition, illustration of the supporting member of the vapor deposition boat 36 is abbreviate | omitted in FIG. In the present embodiment, an example in which the vapor deposition boat 36 is heated by the lamp heater 27 to evaporate the meltable vapor deposition material 25 will be described.

  FIG. 6 is a perspective view of the vapor deposition boat 36. The vapor deposition boat 36 has a box-shaped main body 31 whose outer shape is U-shaped in cross section perpendicular to the longitudinal direction, and accommodates the vapor deposition material 25 at the bottom. Inside the main body 31, three baffle plates 32a, 32b, and 32c are provided. The baffle plates 32a, 32b, and 32c function as capturing members that capture particles generated when the vapor deposition material 25 is heated and bumped. As shown in FIGS. 5 and 6, the three baffle plates 32 a, 32 b, and 32 c are arranged with a gap so that the evaporated deposition material 25 can pass through, but the evaporated deposition material 25 travels straight. Are arranged so as to block reaching the substrate 3. Specifically, the baffle plates 32b and 32c are disposed in the vicinity of the lamp heater 27 at the high position described in the second embodiment and at a slightly lower height than the lamp heater 27. The baffle plate 32a is disposed further below the baffle plates 32b and 32c, and is positioned at a height near the lamp heater 27 in the middle position, and the three baffle plates 32a, 32b, and 32c have a two-stage configuration. ing. Further, the lamp heater 27 at a low position is located in the vicinity of the vapor deposition material 25.

  Next, the operation of the vapor deposition apparatus 301 will be described. The vapor deposition boat 36 containing the vapor deposition material 25 is installed in the processing chamber 2, and the vapor deposition boat 36 is heated by the lamp heater 27 in a state where the processing chamber 2 is evacuated, and the vapor deposition material 25 inside the vapor deposition boat 36 is also heated. Is done. The evaporated vapor deposition material 25 reaches the substrate 3 through the gaps between the baffle plates 32a, 32b, and 32c, and a film is formed. Actually, a shutter (not shown) is provided between the vapor deposition boat 36 and the substrate 3. The shutter is closed at the initial stage of heating, and the shutter is opened when the heating progresses and reaches a steady state. Then, vapor deposition is performed.

  At the time of the heating, the controller 28 controls the lamp heater 27 so that the temperature of the baffle plates 32a, 32b, 32c is equal to or higher than the temperature of the vapor deposition material 25, thereby creating a temperature distribution in the vapor deposition boat 36 in the height direction. Heat.

As an example, a vapor deposition boat having the above-described configuration in which the main body 31 and the baffle plates 32a, 32b, and 32c are made of stainless steel was used, and an experiment was performed in which the vapor deposition material 25 was vapor-deposited using Se. At this time, the temperature of the vapor deposition material 25 was 250 ° C., the temperatures of the baffle plates 32a, 32b, and 32c were 251 ° C., and the obtained film thickness was 200 μm. Further, the number of protruding defects formed by the particles generated by bumping attached to the film was 5 / cm ² .

As a comparative example, the same amount of vapor deposition material was used, the temperature of the vapor deposition material 25 was 250 ° C., and the temperature of the baffle plates 32a, 32b, 32c was 223 ° C. In the experiment for vapor deposition, the film thickness obtained was 180 μm. Further, as a comparative example, in an experiment in which vapor deposition was performed without providing baffle plates 32a, 32b, and 32c, the number of protrusion defects formed by adhesion of particles generated by bumping to the film was 50 / cm ² .

  According to the above experimental results, when the baffle plates 32 a, 32 b, and 32 c are made higher than the vapor deposition material 25, the film thickness can be made thicker than when the baffle plates 32 a, 32 b, and 32 c are lower than the vapor deposition material 25. It was. In addition, the baffle plates 32a, 32b, and 32c were also able to confirm the effect of preventing protruding defects due to bumping.

  In a vapor deposition boat having a baffle plate, the larger the number of baffle plates, the more substances generated by bumping can be captured, and the protrusion defects can be reduced. However, if the number of steps is simply increased without considering the temperature, the normal evaporated material is captured by the baffle plate and the film thickness decreases. On the other hand, according to the configuration of the present embodiment, the normal evaporated vapor deposition material 25 is not captured by the baffle plates 32a, 32b, and 32c. Therefore, the number of baffle plates can be further increased, and more It can be expected that the substance generated by bumping will be captured to reduce the protrusion defects and improve the quality of the film.

  Next, the manufacturing method of the solid state detector which applied the said vapor deposition apparatus and method is demonstrated. The solid state detector is used in an X-ray imaging apparatus or the like, and includes, for example, an electrostatic recording unit including a photoconductive layer that exhibits conductivity when irradiated with recording light, and carries image information. The image information is recorded upon receiving the recording light to be output, and an image signal representing the recorded image information is output.

  FIG. 7 shows an example of the configuration of the solid state detector. 7 includes a first electrode 101, an interface crystallization preventing layer 102, a reading photoconductive layer 103, a charge transporting layer 104, and a recording photoconductive layer on a light-transmitting substrate B such as glass. The layer 105 and the second electrode 106 are stacked in this order.

  The first electrode 101 has a comb-shaped electrode structure, and is made of, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The interface crystallization preventing layer 102 is made of a Se—As alloy. The reading photoconductive layer 103 is a layer that exhibits conductivity and generates a charge pair when irradiated with reading light, and is made of Se. For example, the charge transport layer 104 functions as a substantially insulator for negative charges and functions as a conductor for positive charges, and is made of a Se—As alloy. The recording photoconductive layer 105 exhibits conductivity and generates a charge pair when irradiated with a recording electromagnetic wave (light or radiation), and is made of Se. The second electrode 106 is made of Au. The first electrode 101 and the second electrode 106 are electrically connected to a signal processing unit (not shown) that processes signals.

  When manufacturing a Se-As alloy having the above-described configuration and a solid detector containing Se as a material, a plurality of types of Se-As alloys are deposited in the processing chamber of the deposition apparatus depending on the layer to be formed. , A deposition boat for Se deposition is disposed, and deposition is performed by heating various deposition boats for each layer to be formed. As the configuration of the vapor deposition boat and its heating means, for example, those of the above-described first to third embodiments can be used.

  More specifically, a Se—As alloy serving as the interface crystallization preventing layer 102 is vapor-deposited on the substrate B on which the first electrode 101 is formed, and the reading photoconductive layer 103 and Se to be used is vapor-deposited, a Se-As alloy to be the charge transport layer 104 is vapor-deposited thereon, Se to be the recording photoconductive layer 105 is vapor-deposited thereon, and the second electrode 106 is formed thereon. . As a matter of course, any solid detector other than the above example can be manufactured by applying the present invention as long as it can form a layer by vapor deposition.

  The embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and modifications based on the spirit of the present invention are possible. For example, in the above embodiment, resistance heating and a lamp heater are exemplified as the type of heating means, but another heating means such as an external heater may be used. In the above embodiment, the mesh plate and the main body, and the baffle plate and the main body are integrally heated. However, heating means may be provided separately, and in that case, the heating means different between the net plate and the main body, and the baffle plate and the main body. May be used.

  Further, the configuration of the vapor deposition boat is not limited to the above embodiment, and can be modified based on the gist of the present invention. For example, the material which comprises each member of a vapor deposition boat is not limited to the said example, Molybdenum, tungsten, platinum, nickel etc. can also be used.

  Further, instead of the mesh plates 12 and 22 in the first and second embodiments, a porous member in which holes having substantially the same diameter as the mesh size of the mesh plates 12 and 22 may be used. Alternatively, a porous member 42 in which one direction as shown in FIG. 8 has substantially the same diameter as the mesh of the mesh plates 12 and 22 and a longer hole 42a is formed in the other direction may be used.

  In the first embodiment, a member in which the mesh plate 12 and the upper plate 13 are integrated can also be employed. In the first embodiment, the mesh plate 12 is disposed so as to contact the upper surface of the main body 11. However, the mesh plate 12 is disposed inside the main body 11, and the upper plate 13 is aligned with the mesh plate 12. It is also possible to adopt a configuration in which these are arranged close to each other.

  Furthermore, in the configuration using the baffle plate shown in the third embodiment, the configuration of the number of baffle plates, the number of steps, etc. is not limited to the above example, and can be arbitrarily set.

  Although an example in which a sublimable material is used for the vapor deposition boat 6 of the first embodiment and a fusible material is used for the vapor deposition boats 26 and 36 of the second and third embodiments has been described. The vapor deposition boats 6, 26, and 36 are all applicable to both sublimable materials and meltable materials.

1 is a schematic configuration diagram of a vapor deposition apparatus according to a first embodiment of the present invention. 1 is an exploded perspective view of a vapor deposition boat according to a first embodiment of the present invention. The schematic block diagram of the vapor deposition apparatus by the 2nd Embodiment of this invention. The disassembled perspective view of the vapor deposition boat by the 2nd Embodiment of this invention The schematic block diagram of the vapor deposition apparatus by the 3rd Embodiment of this invention. The disassembled perspective view of the vapor deposition boat by the 3rd Embodiment of this invention Diagram showing the configuration of the solid state detector The figure which shows the structure of the modification of a porous member

Explanation of symbols

1, 201, 301 Deposition apparatus 2 Processing chamber 3 Substrate 4 Substrate holder 5, 25 Deposition material 6, 26, 36 Deposition boat 7 Power supply 8 Support member 11, 21, 31 Main body 11a Recess 12, 12, Net plate 13 Upper plate 13a Hole 27 Lamp heater 28 Controllers 32a, 32b, 32c Baffle plate 100 Solid state detector 101 First electrode 102 Interfacial crystallization preventing layer 103 Photoconductive layer for reading 104 Charge transport layer 105 Photoconductive layer for recording 106 Second electrode B Substrate

Claims (8)

In a vapor deposition apparatus that heats a vapor deposition material and deposits the vapor deposited material on a substrate,
A vapor deposition boat having a main body that accommodates the vapor deposition material, and a capturing member that is disposed above the vapor deposition material and captures a substance generated by bumping of the vapor deposition material;
Heating means for heating the vapor deposition boat,
A vapor deposition apparatus, characterized in that, during vapor deposition, the temperature of the capturing member is equal to or higher than the temperature of the vapor deposition material.   The vapor deposition apparatus according to claim 1, wherein the capturing member is made of a porous member that limits a size of a substance that passes therethrough. The vapor deposition boat has a heating member that is disposed in proximity to the porous member and heats the porous member,
The main body, the porous member, and the heating member are made of metal, and are electrically energized and heated integrally by the heating means,
Regarding the amount of heat generated by resistance heating Wr and the amount of radiant heat Ws from the surface,
(Wr-Ws in the heating member)> (Wr-Ws in the main body)
The vapor deposition apparatus according to claim 2, wherein the vapor deposition apparatus is set to be The porous member is disposed inside the body;
The vapor deposition apparatus according to claim 2, wherein the heating means externally heats the vapor deposition boat with a temperature distribution such that the temperature of the porous member is equal to or higher than the temperature of the vapor deposition material. The capture member is made of a baffle plate that blocks the vaporized material deposited from going straight to the substrate,
The baffle plate is disposed inside the body;
The vapor deposition apparatus according to claim 1, wherein the heating means externally heats the vapor deposition boat with a temperature distribution such that a temperature of the baffle plate is equal to or higher than a temperature of the vapor deposition material.   The vapor deposition apparatus according to claim 1, wherein the vapor deposition material is Se or a Se—As alloy. A vapor deposition method for performing vapor deposition using a vapor deposition boat having a main body containing a vapor deposition material and a capturing member that is disposed above the vapor deposition material and captures a substance generated by bumping of the vapor deposition material,
The vapor deposition method is characterized in that vapor deposition is performed by setting the temperature of the capturing member to be equal to or higher than the temperature of the vapor deposition material. The image information includes an electrostatic recording portion including a photoconductive layer that exhibits conductivity when irradiated with recording light, records the image information upon receiving irradiation of recording light carrying image information, and records the image information. In a manufacturing method of a solid state detector that outputs an image signal representing
A method for producing a solid state detector, wherein the photoconductive layer is formed by using the vapor deposition apparatus according to claim 1.

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