JP2007165864A5 - - Google Patents
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- JP2007165864A5 JP2007165864A5 JP2006307761A JP2006307761A JP2007165864A5 JP 2007165864 A5 JP2007165864 A5 JP 2007165864A5 JP 2006307761 A JP2006307761 A JP 2006307761A JP 2006307761 A JP2006307761 A JP 2006307761A JP 2007165864 A5 JP2007165864 A5 JP 2007165864A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- insulating film
- conversion device
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims 30
- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000011229 interlayer Substances 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 238000002955 isolation Methods 0.000 claims 5
- 239000012212 insulator Substances 0.000 claims 4
- 230000002093 peripheral Effects 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 230000003287 optical Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Claims (14)
前記基板に配された光電変換素子と、A photoelectric conversion element disposed on the substrate;
前記光電変換素子の電荷を転送する転送用トランジスタを含む複数のトランジスタと、A plurality of transistors including a transfer transistor for transferring a charge of the photoelectric conversion element;
前記光電変換素子及び前記転送用トランジスタ上に配される層間絶縁膜と、An interlayer insulating film disposed on the photoelectric conversion element and the transfer transistor;
前記層間絶縁膜に形成された開口に配された、前記転送用トランジスタの活性領域に電気的に接続される導電性部材と、A conductive member disposed in an opening formed in the interlayer insulating film and electrically connected to an active region of the transfer transistor;
前記基板に配された絶縁体を含む素子分離領域と、を有する光電変換装置の製造方法において、In a method for manufacturing a photoelectric conversion device having an element isolation region including an insulator disposed on the substrate,
前記光電変換素子と前記転送用トランジスタと前記素子分離領域とを覆う反射防止膜を形成する工程と、Forming an antireflection film covering the photoelectric conversion element, the transfer transistor, and the element isolation region;
前記反射防止膜を覆って前記層間絶縁膜を形成する工程と、Forming the interlayer insulating film so as to cover the antireflection film;
前記反射防止膜をエッチングストップとして前記層間絶縁膜をエッチングし、前記開口を形成する工程と、を有する光電変換装置の製造方法。Etching the interlayer insulating film using the antireflection film as an etching stop to form the opening.
前記反射防止膜を形成する工程において、前記反射防止膜は前記周辺回路部のトランジスタを覆って形成され、In the step of forming the antireflection film, the antireflection film is formed to cover the transistors in the peripheral circuit portion,
前記光電変換装置の製造方法は、前記周辺回路部のトランジスタを覆う前記反射防止膜をエッチングし、前記周辺回路部のトランジスタのサイドウォールを形成する工程を有することを特徴とする請求項１に記載の光電変換装置の製造方法。2. The method for manufacturing the photoelectric conversion device according to claim 1, further comprising: etching the antireflection film covering the transistor in the peripheral circuit portion to form a sidewall of the transistor in the peripheral circuit portion. Method for manufacturing a photoelectric conversion device.
前記基板に配された光電変換素子と、A photoelectric conversion element disposed on the substrate;
前記光電変換素子の受光面の少なくとも一部上に配される反射防止膜と、An antireflection film disposed on at least a part of the light receiving surface of the photoelectric conversion element;
前記基板に配された絶縁体を有する素子分離領域と、An element isolation region having an insulator disposed on the substrate;
前記光電変換素子の電荷を転送する転送用トランジスタを含む複数のトランジスタと、A plurality of transistors including a transfer transistor for transferring a charge of the photoelectric conversion element;
前記光電変換素子及び前記転送用トランジスタ上に配される層間絶縁膜と、An interlayer insulating film disposed on the photoelectric conversion element and the transfer transistor;
前記層間絶縁膜に形成された開口に配された、前記トランジスタの活性領域に電気的に接続される導電性部材と、を有する光電変換装置において、In a photoelectric conversion device having a conductive member disposed in an opening formed in the interlayer insulating film and electrically connected to an active region of the transistor,
前記反射防止膜は、前記受光部の上部から、前記素子分離領域の上部と、前記導電性部材と接続される活性領域の上部と、前記転送用トランジスタのゲート電極の上部に連続して配され、前記層間絶縁膜に開口を形成する際のエッチング工程におけるエッチングストップ膜として機能する光電変換装置。The antireflection film is continuously arranged from the upper part of the light receiving unit, the upper part of the element isolation region, the upper part of the active region connected to the conductive member, and the upper part of the gate electrode of the transfer transistor. A photoelectric conversion device that functions as an etching stop film in an etching process when an opening is formed in the interlayer insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006307761A JP2007165864A (en) | 2005-11-15 | 2006-11-14 | Photoelectric converter, manufacturing method thereof, and imaging system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005330142 | 2005-11-15 | ||
| JP2006307761A JP2007165864A (en) | 2005-11-15 | 2006-11-14 | Photoelectric converter, manufacturing method thereof, and imaging system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007165864A JP2007165864A (en) | 2007-06-28 |
| JP2007165864A5 true JP2007165864A5 (en) | 2010-01-07 |
Family
ID=38248349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006307761A Pending JP2007165864A (en) | 2005-11-15 | 2006-11-14 | Photoelectric converter, manufacturing method thereof, and imaging system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007165864A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5314914B2 (en) * | 2008-04-04 | 2013-10-16 | キヤノン株式会社 | Photoelectric conversion device, imaging system, design method, and photoelectric conversion device manufacturing method |
| JP5717357B2 (en) * | 2010-05-18 | 2015-05-13 | キヤノン株式会社 | Photoelectric conversion device and camera |
| JP5126291B2 (en) | 2010-06-07 | 2013-01-23 | 株式会社ニコン | Solid-state image sensor |
| JP5975617B2 (en) * | 2011-10-06 | 2016-08-23 | キヤノン株式会社 | Solid-state imaging device, manufacturing method thereof, and camera |
| JP5991729B2 (en) | 2011-10-07 | 2016-09-14 | キヤノン株式会社 | Method for manufacturing solid-state imaging device |
| JP2016149387A (en) | 2015-02-10 | 2016-08-18 | ルネサスエレクトロニクス株式会社 | Image pickup device and manufacturing method of the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3020147B2 (en) * | 1997-07-22 | 2000-03-15 | 日本テキサス・インスツルメンツ株式会社 | Method for manufacturing charge-coupled semiconductor device |
| JP2004165236A (en) * | 2002-11-11 | 2004-06-10 | Sony Corp | Manufacturing method of solid state imaging device |
| US6974715B2 (en) * | 2002-12-27 | 2005-12-13 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor using spacer etching barrier film |
| JP3840214B2 (en) * | 2003-01-06 | 2006-11-01 | キヤノン株式会社 | Photoelectric conversion device, method for manufacturing photoelectric conversion device, and camera using the same |
| JP2005223019A (en) * | 2004-02-03 | 2005-08-18 | Matsushita Electric Ind Co Ltd | Light receiving element, manufacturing method therefor, and solid state imaging device |
| JP2005223085A (en) * | 2004-02-04 | 2005-08-18 | Sony Corp | Semiconductor device and manufacturing method therefor |
-
2006
- 2006-11-14 JP JP2006307761A patent/JP2007165864A/en active Pending
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