JP2007149749A5 - - Google Patents
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- JP2007149749A5 JP2007149749A5 JP2005338677A JP2005338677A JP2007149749A5 JP 2007149749 A5 JP2007149749 A5 JP 2007149749A5 JP 2005338677 A JP2005338677 A JP 2005338677A JP 2005338677 A JP2005338677 A JP 2005338677A JP 2007149749 A5 JP2007149749 A5 JP 2007149749A5
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- JP
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- Prior art keywords
- photoelectric conversion
- signal
- lines
- radiation
- signal lines
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 4
- 238000001514 detection method Methods 0.000 claims 3
- 230000000875 corresponding Effects 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
Claims (7)
前記基板上に配置された、複数の駆動配線及び複数の信号線と、前記駆動配線と前記信号線の行列配置に対応して配置された複数の画素要素と、を有し、 A plurality of drive wirings and a plurality of signal lines arranged on the substrate, and a plurality of pixel elements arranged corresponding to a matrix arrangement of the drive wirings and the signal lines,
前記複数の画素要素のそれぞれは、光電変換素子と、スイッチング素子と、を有し、 Each of the plurality of pixel elements has a photoelectric conversion element and a switching element,
前記複数の駆動配線及び前記複数の信号線の少なくとも一方は、2以上の線の一端が統合された引出し端子であることを特徴とする光電変換装置。 At least one of the plurality of drive wirings and the plurality of signal lines is a lead terminal in which one ends of two or more lines are integrated.
前記光電変換素子は、個別電極と、前記端子接続部と同時に形成された透明電極と、前記個別電極と前記透明電極との間に配置された半導体層と、を有することを特徴とする請求項3に記載の光電変換装置。 The photoelectric conversion element includes an individual electrode, a transparent electrode formed simultaneously with the terminal connection portion, and a semiconductor layer disposed between the individual electrode and the transparent electrode. 3. The photoelectric conversion device according to 3.
前記光電変換素子上に配置された、入射する放射線を前記光電変換素子が感知可能な波長帯域の光に変換する波長変換体とを有することを特徴とする放射線検出装置。 A radiation detection apparatus comprising: a wavelength converter that is disposed on the photoelectric conversion element and converts incident radiation into light in a wavelength band that can be sensed by the photoelectric conversion element.
前記基板上に配置された、複数の駆動配線及び複数の信号線と、前記駆動配線と前記信号線の行列配置に対応して配置された複数の画素要素と、を有し、 A plurality of drive wirings and a plurality of signal lines arranged on the substrate, and a plurality of pixel elements arranged corresponding to a matrix arrangement of the drive wirings and the signal lines,
前記複数の画素要素のそれぞれは、入射する放射線を直接電気信号に変換する半導体素子と、スイッチング素子と、を有し、 Each of the plurality of pixel elements includes a semiconductor element that directly converts incident radiation into an electrical signal, and a switching element.
前記複数の駆動配線及び前記複数の信号線の少なくとも一方は、2以上の線の一端が統合された引出し端子であることを特徴とする放射線検出装置。 At least one of the plurality of drive wirings and the plurality of signal lines is a lead terminal in which one ends of two or more lines are integrated.
前記放射線検出装置からの信号を処理する信号処理手段と、 Signal processing means for processing signals from the radiation detection device;
前記信号処理手段からの信号を記録するための記録手段と、 Recording means for recording a signal from the signal processing means;
前記信号処理手段からの信号を表示するための表示手段と、 Display means for displaying a signal from the signal processing means;
前記信号処理手段からの信号を伝送するための伝送処理手段と、 Transmission processing means for transmitting a signal from the signal processing means;
前記放射線を発生させるための放射線源とを備えたことを特徴とする放射線撮像システム。 A radiation imaging system comprising: a radiation source for generating the radiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005338677A JP4875349B2 (en) | 2005-11-24 | 2005-11-24 | Radiation detection apparatus, radiation imaging system, and detection apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005338677A JP4875349B2 (en) | 2005-11-24 | 2005-11-24 | Radiation detection apparatus, radiation imaging system, and detection apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007149749A JP2007149749A (en) | 2007-06-14 |
JP2007149749A5 true JP2007149749A5 (en) | 2009-01-08 |
JP4875349B2 JP4875349B2 (en) | 2012-02-15 |
Family
ID=38210836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005338677A Expired - Fee Related JP4875349B2 (en) | 2005-11-24 | 2005-11-24 | Radiation detection apparatus, radiation imaging system, and detection apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4875349B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5142943B2 (en) | 2007-11-05 | 2013-02-13 | キヤノン株式会社 | Radiation detection device manufacturing method, radiation detection device and radiation imaging system |
KR20230004217A (en) * | 2021-06-30 | 2023-01-06 | (주)에이투테크 | Color image acquisition device using X-rays |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595514A (en) * | 1991-10-02 | 1993-04-16 | Olympus Optical Co Ltd | Solid-state image pickup device and manufacture of the same |
JPH05145859A (en) * | 1991-11-25 | 1993-06-11 | Hitachi Ltd | Solid-state image pickup device and control method thereof |
JP2001320039A (en) * | 2000-05-11 | 2001-11-16 | Canon Inc | Photoelectric conversion device |
JP4054612B2 (en) * | 2002-06-11 | 2008-02-27 | キヤノン株式会社 | Radiation imaging device |
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2005
- 2005-11-24 JP JP2005338677A patent/JP4875349B2/en not_active Expired - Fee Related
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