JP2007142112A - Method for manufacturing stem for optical semiconductor element - Google Patents

Method for manufacturing stem for optical semiconductor element Download PDF

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JP2007142112A
JP2007142112A JP2005333186A JP2005333186A JP2007142112A JP 2007142112 A JP2007142112 A JP 2007142112A JP 2005333186 A JP2005333186 A JP 2005333186A JP 2005333186 A JP2005333186 A JP 2005333186A JP 2007142112 A JP2007142112 A JP 2007142112A
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mounting
eyelet
mounting side
stem
optical semiconductor
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JP4926458B2 (en
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Takuya Kurosawa
卓也 黒澤
Yoshihiko Nakamura
吉彦 中村
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a stem for an optical semiconductor element which can monitor beams emitted from a light-emitting element with accuracy by the light-emitting element disposed at the lower side, even when the position of the light-emitting element that is to be mounted on the mounting side face is displaced. <P>SOLUTION: By press machining a metal member, an eyelet 10, an element-mounting part 12 comprising a mounting side face S erected thereon, and a recess 10a for mounting on a portion of the eyelet 10 ahead of the element-mounting part 12. Thereafter, by press machining the element-mounting part 12, the mounting side face S of the element-mounting part 12 is shifted to the side of the recess 10a, and the position of the mounting side face S is adjusted. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は光半導体素子用ステムの製造方法に係り、さらに詳しくは、光通信装置や光ディスク装置などに適用される半導体レーザ素子などが実装される光半導体素子用ステムの製造方法に関する。   The present invention relates to a method for manufacturing a stem for an optical semiconductor element, and more particularly to a method for manufacturing a stem for an optical semiconductor element on which a semiconductor laser element or the like applied to an optical communication apparatus, an optical disk apparatus or the like is mounted.

従来、半導体レーザ素子や受光素子が実装される光半導体素子用ステムがある。図1に示すように、従来の光半導体素子用ステムは、円板状のアイレット100とその上に立設する素子実装部110とアイレット100に設けられた第1〜第3リード120a,120b、120cとにより基本構成されている。   Conventionally, there is an optical semiconductor element stem on which a semiconductor laser element and a light receiving element are mounted. As shown in FIG. 1, the conventional stem for an optical semiconductor element includes a disk-shaped eyelet 100, an element mounting part 110 standing on the disk-shaped eyelet 100, and first to third leads 120a and 120b provided on the eyelet 100. 120c.

アイレット100には、その厚み方向に貫通する貫通孔100xが設けられており、その貫通孔100x内に第1、第2リード120a,120bがガラス130によって封着された状態で挿通して固定されている。また、第3リード120cはアイレット100の下面に抵抗溶接によって固定されている。このようにして、第1、第2リード120a,120bはアイレット100と電気的に絶縁されて設けられ、第3リード120cはアイレット100に電気的に接続された状態で設けられている。   The eyelet 100 is provided with a through hole 100x penetrating in the thickness direction, and the first and second leads 120a and 120b are inserted and fixed in the through hole 100x while being sealed by the glass 130. ing. The third lead 120c is fixed to the lower surface of the eyelet 100 by resistance welding. Thus, the first and second leads 120a and 120b are provided to be electrically insulated from the eyelet 100, and the third lead 120c is provided in a state of being electrically connected to the eyelet 100.

素子実装部110は半導体レーザ素子(不図示)が実装される実装側面Sを備えている。また、実装側面Sの前方のアイレットの部分には、底面がスロープ状となったへこみ部100aが形成されており、そのへこみ部100aの底面に受光素子(不図示)が実装される。そして、半導体レーザ素子及び受光素子は、ワイヤなどを介して所定のリード120a〜120cにそれぞれ電気接続される。   The element mounting unit 110 includes a mounting side surface S on which a semiconductor laser element (not shown) is mounted. In addition, a recessed portion 100a having a sloped bottom surface is formed in the eyelet portion in front of the mounting side surface S, and a light receiving element (not shown) is mounted on the bottom surface of the recessed portion 100a. The semiconductor laser element and the light receiving element are electrically connected to predetermined leads 120a to 120c via wires or the like.

このような光半導体素子用ステムに類似したものは、特許文献1〜3に記載されている。
特開2004−72072号公報 特開2005−150684号公報 実開平2−9461号公報
Patent Documents 1 to 3 describe what is similar to such a stem for an optical semiconductor element.
JP 2004-72072 A JP 2005-150684 A Japanese Utility Model Publication No. 2-9461

上記した従来の光半導体素子用ステムでは、半導体レーザ素子は、ある程度の厚みをもつサブマウントを介して素子実装部110の実装側面Sに実装されるので、サブマウントの厚み分だけ実装側面Sから離れた位置に実装される。そして、アイレット100のへこみ部100aの底面に受光素子が実装され、半導体レーザ素子から出射されるレーザ光が受光素子によってモニタされる。   In the above-described conventional stem for an optical semiconductor element, the semiconductor laser element is mounted on the mounting side S of the element mounting portion 110 via a submount having a certain thickness, and therefore, from the mounting side S by the thickness of the submount. Mounted at a remote location. A light receiving element is mounted on the bottom surface of the dent 100a of the eyelet 100, and the laser light emitted from the semiconductor laser element is monitored by the light receiving element.

近年では、サブマウントは、熱伝導性が悪く半導体レーザ素子の放熱の妨げになること及びコスト削減を図ることから、その厚みを薄くするか又は省略する試みがなされている。   In recent years, attempts have been made to reduce or omit the thickness of the submount because it has a poor thermal conductivity and hinders heat radiation of the semiconductor laser device and reduces costs.

しかしながら、サブマウントの厚みを薄くしたり、省略したりすると、半導体レーザ素子は素子実装部の実装側面に接近して実装されることから、半導体レーザ素子からのレーザ光が受光素子の受光部からずれた位置に当たるので、半導体レーザ素子からのレーザ光を受光素子で精度よくモニタできなくなる問題がある。   However, if the thickness of the submount is reduced or omitted, the semiconductor laser element is mounted close to the mounting side surface of the element mounting portion, so that the laser light from the semiconductor laser element is transmitted from the light receiving portion of the light receiving element. Since it hits the shifted position, there is a problem that the laser light from the semiconductor laser element cannot be accurately monitored by the light receiving element.

本発明は以上の課題を鑑みて創作されたものであり、実装側面に実装される発光素子の位置がずれる場合であっても、その下側に配置される受光素子で発光素子から出射される光を精度よくモニタできる光半導体素子用ステムの製造方法を提供することを目的とする。   The present invention was created in view of the above problems, and even when the position of the light emitting element mounted on the mounting side surface is shifted, the light receiving element disposed below the light emitting element emits light from the light emitting element. It is an object of the present invention to provide a method for manufacturing a stem for an optical semiconductor element capable of accurately monitoring light.

上記課題を解決するため、本発明は光半導体素子用ステムの製造方法に係り、金属部材をプレス加工することにより、アイレットと、該アイレットの上に立設する実装側面を備えた素子実装部と、前記実装側面の前方の前記アイレットの部分に設けられる実装用のへこみ部とを形成する工程と、前記素子実装部をプレス加工することにより、前記素子実装部の実装側面を前記へこみ部側に移動して前記実装側面の位置を調整する工程とを有することを特徴とする。   In order to solve the above-described problems, the present invention relates to a method for manufacturing a stem for an optical semiconductor element, and by pressing a metal member, an eyelet, and an element mounting portion having a mounting side surface standing on the eyelet, A step of forming a mounting recess provided in the portion of the eyelet in front of the mounting side surface, and by pressing the element mounting portion, the mounting side surface of the element mounting portion is moved to the recess portion side. And a step of adjusting the position of the mounting side surface by moving.

本発明では、まず、金属部材をプレス加工することにより、板状のアイレットと、その上に立設する、発光素子が実装される実装側面を備えた素子実装部と、素子実装部の前方のアイレットの部分に設けられる、受光素子が実装されるへこみ部とが形成される。この工程では、素子実装部の実装側面は、正規の実装側面の位置から外側にずれた位置に配置される。   In the present invention, first, by pressing a metal member, a plate-shaped eyelet, an element mounting portion that is erected thereon and has a mounting side surface on which a light emitting element is mounted, and a front portion of the element mounting portion. A dent portion provided with the light receiving element is provided in the eyelet portion. In this step, the mounting side surface of the element mounting portion is disposed at a position shifted outward from the position of the regular mounting side surface.

さらに、素子実装部をプレス加工することにより、素子実装部の実装側面をへこみ部側に移動して、素子実装部の実装側面を正規の実装側面の位置に配置されるように位置調整する。これによって、発光素子が実装される素子実装部の実装側面は、受光素子が実装されるアイレットのへこみ部の領域にオーバーラップする所望の位置に配置される。   Further, by pressing the element mounting portion, the mounting side surface of the element mounting portion is moved to the dent portion side, and the position adjustment is performed so that the mounting side surface of the element mounting portion is disposed at the position of the regular mounting side surface. As a result, the mounting side surface of the element mounting portion on which the light emitting element is mounted is arranged at a desired position that overlaps the area of the eyelet recess where the light receiving element is mounted.

前述したように、発光素子は、ある程度の厚みをもつサブマウントを介して素子実装部の実装側面に実装されるが、コスト削減や放熱性の改善を目的にサブマウントの厚みを薄くしたり、サブマウントを省略したりする要望がある。   As described above, the light emitting element is mounted on the mounting side surface of the element mounting portion via a submount having a certain thickness, but the thickness of the submount is reduced for the purpose of cost reduction and heat dissipation improvement, There is a demand to omit the submount.

本発明では、素子実装部の実装側面を受光素子が実装されるへこみ部の領域の任意の位置にずらして調整して配置できるので、サブマウントを薄くして発光素子が素子実装部の実装側面により接近して実装される場合であっても、発光素子の発光部の下に受光素子の受光部を配置できるようになる。このように、発光素子と受光素子の実装する際の位置関係を容易に調整できるので、発光素子の実装位置がずれる場合であっても、発光素子から出射される光を受光素子によって高精度にモニタできるようになる。   In the present invention, the mounting side surface of the element mounting portion can be shifted and adjusted to an arbitrary position in the indentation region where the light receiving element is mounted. Even when mounted closer, the light receiving part of the light receiving element can be arranged under the light emitting part of the light emitting element. As described above, since the positional relationship between the light emitting element and the light receiving element can be easily adjusted, even when the mounting position of the light emitting element is deviated, the light emitted from the light emitting element is accurately reflected by the light receiving element. It becomes possible to monitor.

しかも、金型のポンチのチッピングを防止するために素子実装部とへこみ部との境界部を曲面とし、これによって受光素子をこれ以上実装側面側に移動できない場合であっても、何ら不具合は発生することはない。   Moreover, in order to prevent chipping of the punch of the mold, even if the boundary between the element mounting part and the dent part is a curved surface, so that the light receiving element cannot be moved further to the mounting side, no problems occur. Never do.

さらには、サブマウントを省略する場合であっても、素子実装部の実装側面をへこみ部側にさらに移動して配置することにより、発光素子から出射される光を受光素子によって高精度にモニタできるようになる。   Furthermore, even when the submount is omitted, the light emitted from the light emitting element can be monitored with high accuracy by the light receiving element by further moving the mounting side surface of the element mounting part to the indented part side. It becomes like this.

なお、特許文献3には、放熱体の基部に設けられた凹部にモニタ素子の端部を収容して実装することにより、放熱体の側面に実装される半導体レーザ素子の真下にモニタ素子の受光面が配置されるように構成することが記載されているが、製造方法に関しては何ら考慮されておらず、本発明の構成を示唆するものではない。   In Patent Document 3, the end of the monitor element is accommodated and mounted in a recess provided in the base of the radiator, so that the light received by the monitor element is directly below the semiconductor laser element mounted on the side surface of the radiator. Although it is described that the surface is configured to be disposed, no consideration is given to the manufacturing method, and the configuration of the present invention is not suggested.

以上説明したように、本発明の光半導体素子用ステムの製造方法では、発光素子が実装される実装側面の位置を容易に調整できるので、実装側面と発光素子の距離が変化する場合であっても容易に対応することができる。   As described above, in the method for manufacturing a stem for an optical semiconductor element of the present invention, the position of the mounting side surface on which the light emitting element is mounted can be easily adjusted, so that the distance between the mounting side surface and the light emitting element changes. Can also be easily accommodated.

以下、本発明の実施の形態について、添付の図面を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

本発明の実施形態を説明する前に、サブマウントを薄くして半導体レーザ素子を素子実装部の実装側面に実装する際に発生する不具合について説明する。   Before describing the embodiment of the present invention, a problem that occurs when the submount is thinned and the semiconductor laser element is mounted on the mounting side surface of the element mounting portion will be described.

図2には、光半導体素子用ステムのアイレット100とその上に立設する素子実装部110とが示されており、素子実装部110の実装側面Sの前方のアイレット100の部分に底面がスロープ状になったへこみ部100aが設けられている。素子実装部110の実装側面Sの下部とへこみ部100aの一端側とは境界部Aで繋がっており、その境界部Aは曲面(R面)となって丸みを帯びて形成されている。境界部Aを曲面とする理由は、金属部材を一連のプレス加工によって成形してステムを製造する際に、へこみ部100aを形成するプレス工程において金型のポンチに角部が存在するとポンチにチッピング(欠け)が発生し、連続して精度よくプレス加工することが困難になるからである。   FIG. 2 shows the eyelet 100 of the stem for the optical semiconductor element and the element mounting portion 110 standing on the stem, and the bottom surface is sloped to the portion of the eyelet 100 in front of the mounting side S of the element mounting portion 110. A recessed portion 100a is provided. The lower part of the mounting side surface S of the element mounting part 110 and one end side of the dent part 100a are connected by a boundary part A, and the boundary part A is formed into a curved surface (R surface) and rounded. The reason why the boundary A is a curved surface is that when a metal member is formed by a series of pressing processes and a stem is manufactured, if there is a corner in the punch of the mold in the pressing step for forming the recess 100a, the punch is chipped. This is because (chips) occur and it becomes difficult to perform press processing continuously and accurately.

そして、半導体レーザ素子200がサブマウント130を介して素子実装部110の実装側面Sに実装される。また、半導体レーザ素子200の下部から出射されるレーザ光Lをモニタする受光素子300がへこみ部100aの底面に実装される。このようにして、半導体レーザ素子200から出射されるレーザ光Lを受光素子300によってモニタすることができる。   Then, the semiconductor laser element 200 is mounted on the mounting side surface S of the element mounting portion 110 via the submount 130. In addition, a light receiving element 300 that monitors the laser light L emitted from the lower portion of the semiconductor laser element 200 is mounted on the bottom surface of the indented portion 100a. In this way, the laser light L emitted from the semiconductor laser element 200 can be monitored by the light receiving element 300.

前述したように、近年では、サブマウント130は、熱伝導性が悪く半導体レーザ素子200の放熱の妨げになること及びコスト削減を図ることから、その厚みを薄くするか又は省略する試みがなされている。   As described above, in recent years, since the submount 130 has poor thermal conductivity and hinders heat radiation of the semiconductor laser element 200 and reduces costs, attempts have been made to reduce or omit the thickness. Yes.

そこで、図3に示すように、サブマウント130の厚みを薄くすると、半導体レーザ素子200の位置が実装側面S側に移動するため、半導体レーザ素子200から出射されるレーザ光Lが受光素子300の受光部からずれた位置に当たるようになり、半導体レーザ素子200からのレーザ光Lを受光素子300で精度よくモニタできなくなる。しかも、実装側面Sとへこみ部100aの境界部Aは曲面となっているため、受光素子300をこれ以上半導体レーザ素子200側に近づけることは困難である。   Therefore, as shown in FIG. 3, when the thickness of the submount 130 is reduced, the position of the semiconductor laser element 200 moves to the mounting side S side, so that the laser light L emitted from the semiconductor laser element 200 is emitted from the light receiving element 300. The light beam comes in contact with the position shifted from the light receiving portion, and the laser light L from the semiconductor laser element 200 cannot be accurately monitored by the light receiving element 300. In addition, since the boundary portion A between the mounting side surface S and the recessed portion 100a is a curved surface, it is difficult to bring the light receiving element 300 closer to the semiconductor laser element 200 side.

以下に説明する本発明の実施形態は上記した不具合を容易に解消することができる。   The embodiment of the present invention described below can easily solve the above-described problems.

図4〜図9は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図である。本発明の実施形態の光半導体素子用ステムの製造方法は、まず、図4(a)に示すように、金属部材5を用意し、さらに、下型20a及び下部側に凹部20xが形成された上型20bを備えた第1金型20を用意する。金属部材5としては、全体にわたって鉄(Fe)又は銅(Cu)からなる金属材、もしくは鉄(Fe)/銅(Cu)/鉄(Fe)からなるクラッド材などが好適に使用される。   4 to 9 are cross-sectional views illustrating a method for manufacturing a stem for an optical semiconductor element according to an embodiment of the present invention. In the manufacturing method of the stem for an optical semiconductor element according to the embodiment of the present invention, first, as shown in FIG. 4A, the metal member 5 is prepared, and the lower mold 20a and the recess 20x are formed on the lower side. A first mold 20 having an upper mold 20b is prepared. As the metal member 5, a metal material made of iron (Fe) or copper (Cu) or a clad material made of iron (Fe) / copper (Cu) / iron (Fe) is preferably used.

そして、金属部材5を下型20aと上型20bとの間に配置し、上型20bによって下型20a上の金属部材5を押圧する。これにより、図4(b)に示すように、上型20bの凹部20x側に金属部材5が押し込まれることで上側に突出する凸部が形成され、板状のアイレット10とその上に立設する素子実装部(放熱部)12が得られる。素子実装部12は、半導体レーザ素子が実装される実装側面Sを備えており、その実装側面Sは、後に半導体レーザ素子が配置される正規の実装側面の位置から距離dmm(例えば、0.2〜0.5mm)分だけ外側にずれて(オフセット)されて配置される。正規の実装側面の位置は、サブマウントの厚みを薄くする場合やサブマウントを省略する場合に対応して半導体レーザ素子が最適の位置に配置されるように設定され、それによって距離dが適宜調整される。   And the metal member 5 is arrange | positioned between the lower mold | type 20a and the upper mold | type 20b, and the metal member 5 on the lower mold | type 20a is pressed by the upper mold | type 20b. As a result, as shown in FIG. 4B, the metal member 5 is pushed into the concave portion 20x side of the upper mold 20b to form a convex portion that protrudes upward, and the plate-shaped eyelet 10 is erected on it. The element mounting part (heat radiation part) 12 to be obtained is obtained. The element mounting portion 12 includes a mounting side surface S on which the semiconductor laser element is mounted. The mounting side surface S is a distance dmm (for example, 0.2 mm) from the position of the regular mounting side surface on which the semiconductor laser element is disposed later. (Offset) by 0.5 mm). The position of the regular mounting side surface is set so that the semiconductor laser element is arranged at the optimum position corresponding to the case where the thickness of the submount is reduced or the case where the submount is omitted, and the distance d is adjusted accordingly. Is done.

次いで、図5(a)に示すように、下型21aと押え部材21xとポンチ21yとを備えた第2金型21を用意する。第2金型21のポンチ21yは、素子実装部12の実装側面Sの前方のアイレット10の部分に受光素子が実装されるへこみ部を形成するためのものであり、その下部にへこみ部に対応する凸部Cが形成されている。   Next, as shown in FIG. 5A, a second mold 21 including a lower mold 21a, a pressing member 21x, and a punch 21y is prepared. The punch 21y of the second mold 21 is for forming a dent portion in which the light receiving element is mounted in the portion of the eyelet 10 in front of the mounting side surface S of the element mounting portion 12, and corresponds to the dent portion in the lower part thereof. The convex part C to be formed is formed.

そして、下型21aの上に素子実装部12が立設したアイレット10を配置し、押え部材21xで保持した状態でポンチ21yによって素子実装部12の実装側面Sの前方のアイレット10の部分を押圧する。これにより、図5(b)に示すように、素子実装部12の実装側面Sの前方のアイレット10の部分に底面がスロープ状のへこみ部10aが形成される。このとき、素子実装部12の付け根部分を押圧するポンチ21yの部分はチッピング(欠け)を防止するために曲面(R面)となっており、これによって素子実装部12の実装側面Sとアイレット10のへこみ部10aの境界部A(図5(b))が曲面(R面)となって成形される。   Then, the eyelet 10 in which the element mounting portion 12 is erected is placed on the lower mold 21a, and the portion of the eyelet 10 in front of the mounting side S of the element mounting portion 12 is pressed by the punch 21y while being held by the pressing member 21x. To do. As a result, as shown in FIG. 5 (b), a recessed portion 10 a having a sloped bottom surface is formed in the portion of the eyelet 10 in front of the mounting side surface S of the element mounting portion 12. At this time, the portion of the punch 21y that presses the base portion of the element mounting portion 12 is a curved surface (R surface) to prevent chipping (chip), and thereby the mounting side surface S of the element mounting portion 12 and the eyelet 10 are formed. The boundary portion A (FIG. 5B) of the indented portion 10a is formed into a curved surface (R surface).

次いで、図6に示すように、下型22a、第1ポンチ22x、第2ポンチ22y及び第3ポンチ22zを備えた第3金型22を用意する。第1ポンチ22xは素子実装部12を横方向に押圧するためのものであり、第2ポンチ22yは素子実装部12の上面を押えるものであり、また第3ポンチ22zはアイレット10を押えると共に、素子実装部12の実装側面Sの位置を決めるストッパとして機能するものである。つまり、素子実装部12の実装側面Sに対向する第3ポンチ22zの面は、予め外側にオフセットされて配置された素子実装部12の実装側面Sを正規の実装側面の位置に調整するための基準面Bとなっている。そして、第3金型22の下型22aの上に素子実装部12が立設するアイレット10を配置し、素子実装部12の回りに第1〜第3ポンチ22x〜22zを素子実装部12に位置合わせして配置する。   Next, as shown in FIG. 6, a third mold 22 including a lower mold 22a, a first punch 22x, a second punch 22y, and a third punch 22z is prepared. The first punch 22x is for pressing the element mounting portion 12 in the lateral direction, the second punch 22y is for pressing the upper surface of the element mounting portion 12, and the third punch 22z is for pressing the eyelet 10. It functions as a stopper that determines the position of the mounting side surface S of the element mounting portion 12. That is, the surface of the third punch 22z that faces the mounting side S of the element mounting unit 12 is for adjusting the mounting side S of the element mounting unit 12 that has been offset in advance to the position of the regular mounting side. This is a reference plane B. Then, the eyelet 10 on which the element mounting portion 12 is erected is disposed on the lower mold 22 a of the third mold 22, and the first to third punches 22 x to 22 z are arranged around the element mounting portion 12 on the element mounting portion 12. Align and place.

続いて、図7に示すように、第2ポンチ22yで素子実装部12の上面を押え、かつ第3ポンチ22zによってアイレット10を押えた状態で、第1ポンチ22xによって素子実装部12をアイレット10のへこみ部10a側に押圧することにより、実装側面Sを横方向に移動させる。これにより、素子実装部12の実装側面Sは、第3ポンチ22zの基準面Bに当接して正規の実装側面の位置に配置される。   Subsequently, as shown in FIG. 7, in a state where the upper surface of the element mounting portion 12 is pressed by the second punch 22y and the eyelet 10 is pressed by the third punch 22z, the element mounting portion 12 is held by the first punch 22x. The mounting side surface S is moved in the lateral direction by pressing toward the recess 10a. Thereby, the mounting side surface S of the element mounting part 12 contacts the reference surface B of the third punch 22z and is disposed at the position of the regular mounting side surface.

このようにして、図8に示すように、素子実装部12の実装側面Sの側がアイレット10のへこみ部10a側に押しだされて、へこみ部10aの領域にオーバーラップするように付け根から突き出た突出部Tが形成され、実装側面Sの位置が調整されて配置される。また、素子実装部12の実装側面Sと反対面は第1ポンチ22xによって押圧されて凹部12xが設けられる。   In this manner, as shown in FIG. 8, the mounting side S side of the element mounting portion 12 is pushed out toward the dent portion 10a side of the eyelet 10 and protrudes from the base so as to overlap the region of the dent portion 10a. The protrusion T is formed, and the position of the mounting side surface S is adjusted and arranged. Further, the surface opposite to the mounting side surface S of the element mounting portion 12 is pressed by the first punch 22x to be provided with the recess 12x.

続いて、図9及び図10に示すように、プレス加工によって、アイレット10に第1、第2貫通孔11a,11bを形成すると共に、アイレットの外周部に位置決め用の一対の三角形状の切り欠き部10xと、方向表示用の四角形状の切り欠き部10yとを形成する。   Subsequently, as shown in FIGS. 9 and 10, the first and second through holes 11a and 11b are formed in the eyelet 10 by pressing, and a pair of triangular notches for positioning are formed on the outer periphery of the eyelet. A portion 10x and a rectangular cutout portion 10y for direction indication are formed.

さらに、アイレット10の第1、第2貫通孔11a、11bに第1、第2リード16a,16bを挿通し、ガラス18によって封着して固定する。また、アイレット12の下面に第3リード16cを抵抗溶接によって固定する。   Further, the first and second leads 16 a and 16 b are inserted into the first and second through holes 11 a and 11 b of the eyelet 10 and sealed and fixed by the glass 18. Further, the third lead 16c is fixed to the lower surface of the eyelet 12 by resistance welding.

以上により、図10に示すような本実施形態に係わる光半導体素子用ステム1が製造される。なお、前述した形態では、一連のプレス加工の工程で素子実装部12を横方向に押圧して実装側面Sの位置を調整しているが、アイレット10にリード16a〜16cを設けた後に、素子実装部12の実装側面Sの位置を調整してもよい。   As described above, the stem 1 for optical semiconductor elements according to this embodiment as shown in FIG. 10 is manufactured. In the above-described embodiment, the element mounting portion 12 is pressed in the lateral direction in a series of pressing processes to adjust the position of the mounting side S. However, after the leads 16a to 16c are provided on the eyelet 10, the element The position of the mounting side surface S of the mounting unit 12 may be adjusted.

以上説明したように、本実施形態の光半導体素子用ステムの製造方法では、まず、金属部材5をプレス加工することにより、板状のアイレット10と、その上に立設する素子実装部12と、素子実装部12の前方のアイレット10の部分に設けられるへこみ部10aとを形成する。このとき、素子実装部12の実装側面Sの下部とアイレット10のへこみ部10aの底面との境界部Aは、金型のポンチのチッピングを防止するために曲面となって形成される。この時点では、素子実装部12の実装側面Sはへこみ部10aの一端部の直上に配置され、正規の実装側面の位置よりも外側にずれた(オフセット)状態で形成される。   As described above, in the method for manufacturing a stem for an optical semiconductor element according to the present embodiment, first, the metal member 5 is pressed to obtain a plate-shaped eyelet 10 and an element mounting portion 12 standing on the plate-shaped eyelet 10. And a dent 10a provided in the portion of the eyelet 10 in front of the element mounting portion 12. At this time, a boundary portion A between the lower portion of the mounting side surface S of the element mounting portion 12 and the bottom surface of the recessed portion 10a of the eyelet 10 is formed as a curved surface to prevent chipping of the mold. At this time, the mounting side surface S of the element mounting portion 12 is disposed immediately above one end portion of the indented portion 10a, and is formed in a state shifted (offset) outward from the position of the regular mounting side surface.

さらに、プレス加工により、素子実装部12をアイレット10のへこみ部10a側に押圧して実装側面Sをへこみ部10a側に移動することにより、素子実装部12の実装側面Sを正規の実装側面の位置に配置されるように調整する。これによって、半導体レーザ素子が実装される素子実装部12の実装側面Sは、受光素子が実装されるアイレット10のへこみ部10aの領域にオーバーラップする所望の位置に配置される。   Further, the mounting side surface S of the element mounting part 12 is moved to the side of the indented part 10a by pressing the element mounting part 12 toward the indented part 10a side of the eyelet 10 by press working, so that Adjust to position. As a result, the mounting side surface S of the element mounting portion 12 on which the semiconductor laser element is mounted is disposed at a desired position that overlaps the region of the recess 10a of the eyelet 10 on which the light receiving element is mounted.

そのような製造方法によって製造される光半導体素子用ステム1は、図10に示すように、アイレット10とその上に立設する素子実装部12とアイレット10に装着された3つのリード16(第1〜第3リード16a〜16c)とにより基本構成されている。素子実装部12は半導体レーザ素子が実装される実装側面Sを備えている。また、実装側面Sの前方のアイレット10の部分には受光素子が実装される底面がスロープ状になったへこみ部10aが設けられている。素子実装部12では、その付け根部分からアイレット10のへこみ部10a側に突き出る突出部Tが設けられており、その実装側面Sがへこみ部10aの領域にオーバーラップする位置に配置されている。   As shown in FIG. 10, the stem 1 for an optical semiconductor device manufactured by such a manufacturing method includes an eyelet 10, an element mounting portion 12 erected on the eyelet 10, and three leads 16 (first pins mounted on the eyelet 10). 1 to 3rd leads 16a to 16c). The element mounting portion 12 includes a mounting side S on which the semiconductor laser element is mounted. Further, the eyelet 10 in front of the mounting side surface S is provided with a recess 10a having a sloped bottom surface on which the light receiving element is mounted. The element mounting portion 12 is provided with a protruding portion T that protrudes from the base portion toward the recessed portion 10a side of the eyelet 10, and is disposed at a position where the mounting side surface S overlaps the region of the recessed portion 10a.

さらに、アイレット10にはその厚み方向に貫通する2つの貫通孔(第1、第2貫通孔11a,11b)が設けられている。そして、第1、2リード16a,16bが第1、第2貫通孔11a,11bにそれぞれ挿通され、ガラス18によって第1、第2貫通孔11a,11bにそれぞれ封着されて固定されている。   Further, the eyelet 10 is provided with two through holes (first and second through holes 11a and 11b) penetrating in the thickness direction. The first and second leads 16a and 16b are inserted into the first and second through holes 11a and 11b, respectively, and are sealed and fixed to the first and second through holes 11a and 11b by the glass 18, respectively.

さらに、第3リード16cがアイレット10の下面に抵抗溶接されており、第3リード16cはアイレット10及び素子実装部12に電気的に接続された状態で固定されている。   Further, the third lead 16 c is resistance-welded to the lower surface of the eyelet 10, and the third lead 16 c is fixed while being electrically connected to the eyelet 10 and the element mounting portion 12.

また、アイレット10には位置決め用の一対の三角形状の切り欠き部10xと、方向表示用の四角形状の切り欠き部10yとが設けられている。   Further, the eyelet 10 is provided with a pair of triangular notch portions 10x for positioning and a square notch portion 10y for direction indication.

そして、例えば、第1リード16aが発光素子用リードとなり、第2リード16bが受光素子用リードとなり、第3リード16cが共通グランドリードとなる。素子実装部12の実装側面Sに実装される発光素子はワイヤを介して第1リード16aに電気接続される。また、アイレット10のへこみ部10aの底面に実装される受光素子はワイヤを介して受光素子用の第2リード16bに電気接続される。さらに、発光素子及び受光素子は、ワイヤなどによってアイレット10を介して第3リード16c(共通グランドリード)に電気接続される。   For example, the first lead 16a becomes a light emitting element lead, the second lead 16b becomes a light receiving element lead, and the third lead 16c becomes a common ground lead. The light emitting element mounted on the mounting side S of the element mounting portion 12 is electrically connected to the first lead 16a via a wire. The light receiving element mounted on the bottom surface of the recessed portion 10a of the eyelet 10 is electrically connected to the second lead 16b for the light receiving element through a wire. Further, the light emitting element and the light receiving element are electrically connected to the third lead 16c (common ground lead) through the eyelet 10 by a wire or the like.

図11には、本実施形態に係る光半導体素子用ステム1に半導体レーザ素子と受光素子が実装された例が示されている。図11のステムは図10のI−Iに沿った断面に相当する。図11に示すように、素子実装部12の実装側面Sの上にサブマウント32を介して半導体レーザ素子30が実装され、アイレット10のへこみ部10aの底面に受光素子40が実装されている。   FIG. 11 shows an example in which a semiconductor laser element and a light receiving element are mounted on the optical semiconductor element stem 1 according to the present embodiment. The stem in FIG. 11 corresponds to a cross section along II in FIG. As shown in FIG. 11, the semiconductor laser element 30 is mounted on the mounting side S of the element mounting portion 12 via the submount 32, and the light receiving element 40 is mounted on the bottom surface of the recessed portion 10 a of the eyelet 10.

前述したように、素子実装部12の実装側面Sは、アイレット10のへこみ部10aの領域にオーバーラップする所望の位置に配置される。このため、サブマウント32を薄くして半導体レーザ素子30が素子実装部12の実装側面Sに接近して実装される場合であっても、受光素子40の受光部を半導体レーザ素子30の発光部の真下に配置できるので、半導体レーザ素子30から出射されるレーザ光Lを受光素子40によって精度よくモニタできるようになる。   As described above, the mounting side surface S of the element mounting portion 12 is disposed at a desired position that overlaps the region of the recessed portion 10 a of the eyelet 10. Therefore, even if the submount 32 is thinned and the semiconductor laser element 30 is mounted close to the mounting side S of the element mounting portion 12, the light receiving portion of the light receiving element 40 is used as the light emitting portion of the semiconductor laser element 30. Therefore, the laser light L emitted from the semiconductor laser element 30 can be accurately monitored by the light receiving element 40.

しかも、金型のポンチのチッピングを防止するために素子実装部12とへこみ部10aとの境界部を曲面とし、これによって受光素子40をこれ以上実装側面S側に移動できない場合であっても、何ら不具合が発生することなく対応することができる。   Moreover, in order to prevent chipping of the punch of the mold, even if the boundary between the element mounting portion 12 and the dent portion 10a is a curved surface, the light receiving element 40 can no longer be moved to the mounting side S side. It is possible to cope without any trouble.

さらには、コスト削減や放熱性を改善するためにサブマウント32を省略する場合であっても、素子実装部12の実装側面Sをへこみ部10a側にさらに移動して配置することにより、半導体レーザ素子30から出射されるレーザ光Lを受光素子40によって精度よくモニタできるようになる。   Furthermore, even when the submount 32 is omitted in order to reduce costs and improve heat dissipation, the semiconductor laser can be arranged by moving the mounting side surface S of the element mounting portion 12 further toward the dent portion 10a. The laser beam L emitted from the element 30 can be accurately monitored by the light receiving element 40.

図1は従来技術の光半導体素子用ステムの一例を示す斜視図である。FIG. 1 is a perspective view showing an example of a conventional stem for an optical semiconductor element. 図2は光半導体素子用ステムに半導体レーザ素子と受光素子が実装された様子を示す断面図である。FIG. 2 is a cross-sectional view showing a state in which a semiconductor laser element and a light receiving element are mounted on a stem for an optical semiconductor element. 図3は、図2の半導体素子用ステムにおいて半導体レーザ素子が実装されるサブマウントの厚みを薄くした場合に発生する不具合を説明する断面図である。FIG. 3 is a cross-sectional view illustrating a problem that occurs when the thickness of the submount on which the semiconductor laser element is mounted is reduced in the semiconductor element stem of FIG. 図4(a)及び(b)は本発明の実施形態の半導体素子用ステムの製造方法を示す断面図(その1)である。4 (a) and 4 (b) are cross-sectional views (No. 1) showing the method for manufacturing the stem for a semiconductor element according to the embodiment of the present invention. 図5(a)及び(b)は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図(その2)である。5A and 5B are sectional views (No. 2) showing the method for manufacturing the stem for the optical semiconductor element according to the embodiment of the present invention. 図6は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図(その3)である。FIG. 6 is a sectional view (No. 3) showing the method for manufacturing the stem for the optical semiconductor element according to the embodiment of the present invention. 図7は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図(その4)である。FIG. 7: is sectional drawing (the 4) which shows the manufacturing method of the stem for optical semiconductor elements of embodiment of this invention. 図8は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図(その5)である。FIG. 8: is sectional drawing (the 5) which shows the manufacturing method of the stem for optical semiconductor elements of embodiment of this invention. 図9は本発明の実施形態の光半導体素子用ステムの製造方法を示す断面図(その6)である。FIG. 9 is a sectional view (No. 6) showing the method for manufacturing the stem for the optical semiconductor element according to the embodiment of the present invention. 図10は本発明の実施形態に係る光半導体素子用ステムを示す斜視図である。FIG. 10 is a perspective view showing an optical semiconductor element stem according to an embodiment of the present invention. 図11は本発明の実施形態に係わる光半導体素子用ステムに半導体レーザ素子及び受光素子が実装された様子を示す断面図である。FIG. 11 is a cross-sectional view showing a state in which a semiconductor laser element and a light receiving element are mounted on a stem for an optical semiconductor element according to an embodiment of the present invention.

符号の説明Explanation of symbols

1…光半導体素子用ステム、5…金属部材、10…アイレット、10a…へこみ部、10x,10y…切り欠け部、11a,11b…貫通孔、12…素子実装部、12x…凹部、16a…第1リード、16b…第2リード、16c…第3リード、18…ガラス、20…第1金型、20a,21a,22a…下型、20b…上型、20x…凹部、21…第2金型、21x…押え部材、21y…ポンチ、22…第3金型、22x…第1ポンチ、22y…第2ポンチ、22z…第3ポンチ、30…半導体レーザ素子、32…サブマウント、40…受光素子、A…境界部、S…実装側面、T…突出部、C…凸部、L…レーザ光。 DESCRIPTION OF SYMBOLS 1 ... Stem for optical semiconductor elements, 5 ... Metal member, 10 ... Eyelet, 10a ... Recessed part, 10x, 10y ... Notch part, 11a, 11b ... Through-hole, 12 ... Element mounting part, 12x ... Recessed part, 16a ... 1st 1 lead, 16b ... 2nd lead, 16c ... 3rd lead, 18 ... glass, 20 ... 1st metal mold | die, 20a, 21a, 22a ... lower mold | type, 20b ... upper mold | type, 20x ... recessed part, 21 ... 2nd metal mold | die 21x ... Pressing member, 21y ... Punch, 22 ... Third mold, 22x ... First punch, 22y ... Second punch, 22z ... Third punch, 30 ... Semiconductor laser element, 32 ... Submount, 40 ... Light receiving element , A ... boundary part, S ... mounting side surface, T ... projecting part, C ... convex part, L ... laser beam.

Claims (7)

金属部材をプレス加工することにより、アイレットと、該アイレットの上に立設する実装側面を備えた素子実装部と、前記実装側面の前方の前記アイレットの部分に設けられる実装用のへこみ部とを形成する工程と、
前記素子実装部をプレス加工することにより、前記素子実装部の実装側面を前記へこみ部側に移動して前記実装側面の位置を調整する工程とを有することを特徴とする光半導体素子用ステムの製造方法。
By pressing the metal member, an eyelet, an element mounting portion having a mounting side surface standing on the eyelet, and a mounting dent portion provided in the portion of the eyelet in front of the mounting side surface Forming, and
And a step of adjusting the position of the mounting side surface by pressing the element mounting portion to move the mounting side surface of the element mounting portion to the indented portion side. Production method.
前記金属部材をプレス加工する工程において、前記素子実装部の実装側面の下部側と前記アイレットの前記へこみ部の一端側は曲面を介して繋がって形成されることを特徴とする請求項1に記載の光半導体素子用ステムの製造方法。   2. The step of pressing the metal member, wherein a lower side of a mounting side surface of the element mounting portion and one end side of the indented portion of the eyelet are connected via a curved surface. Of manufacturing a stem for an optical semiconductor element. 前記金属部材をプレス加工する工程は、
第1のプレス加工により、前記金属部材を成形して、前記アイレットと前記素子実装部を形成する工程と、
第2のプレス加工により、前記実装側面の前方の前記アイレットの部分に前記へこみ部を形成する工程とを含むことを特徴とする請求項1又は2に記載の光半導体素子用ステムの製造方法。
The step of pressing the metal member includes:
Forming the metal member by first press working to form the eyelet and the element mounting portion;
The method for manufacturing a stem for an optical semiconductor element according to claim 1, further comprising a step of forming the dent portion in a portion of the eyelet in front of the mounting side surface by a second press working.
前記金属部材をプレス加工する工程において、前記素子実装部の前記実装側面を正規の実装側面の位置から前記アイレットの外側にずれた位置に配置し、
前記実装側面の位置を調整する工程において、前記素子実装部の前記実装側面を前記正規の実装位置に配置することを特徴とする請求項1乃至3のいずれか一項に記載の光半導体素子用ステムの製造方法。
In the step of pressing the metal member, the mounting side surface of the element mounting portion is disposed at a position shifted from the position of the regular mounting side surface to the outside of the eyelet,
4. The optical semiconductor element according to claim 1, wherein in the step of adjusting the position of the mounting side surface, the mounting side surface of the element mounting portion is arranged at the regular mounting position. 5. Stem manufacturing method.
前記実装側面の位置を調整する工程の後又は前に、前記アイレットにリードを装着する工程をさらに有することを特徴とする請求項1乃至3のいずれか一項に記載の光半導体素子用ステムの製造方法。   4. The stem for an optical semiconductor element according to claim 1, further comprising a step of attaching a lead to the eyelet after or before the step of adjusting the position of the mounting side surface. 5. Production method. 前記素子実装部の前記実装側面には発光素子が実装され、前記アイレットの前記へこみ部には前記発光素子から出射される光をモニタする受光素子が実装されることを特徴とする請求項1乃至3のいずれか一項に記載の光半導体素子用ステムの製造方法。   The light emitting device is mounted on the mounting side surface of the device mounting portion, and the light receiving device for monitoring the light emitted from the light emitting device is mounted on the dent portion of the eyelet. 4. The method for manufacturing a stem for an optical semiconductor element according to claim 3. 前記金属部材は、鉄、銅、又は鉄/銅/鉄から構成されるクラッド材からなることを特徴とする請求項1乃至3のいずれか一項に記載の光半導体素子用ステムの製造方法。   4. The method for manufacturing a stem for an optical semiconductor element according to claim 1, wherein the metal member is made of a clad material made of iron, copper, or iron / copper / iron. 5.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010199287A (en) * 2009-02-25 2010-09-09 Shinko Electric Ind Co Ltd Method of manufacturing semiconductor device
JP2015082609A (en) * 2013-10-23 2015-04-27 新光電気工業株式会社 Stem for semiconductor package, and semiconductor package

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925292A (en) * 1982-07-30 1984-02-09 Fujitsu Ltd Semiconductor laser device
JPH029461A (en) * 1988-06-29 1990-01-12 Matsushita Electric Ind Co Ltd Air cleaner
JPH029461U (en) * 1988-07-04 1990-01-22
JPH02174179A (en) * 1988-12-26 1990-07-05 Hitachi Ltd Optoelectronic device and its manufacture
JPH03286589A (en) * 1990-04-03 1991-12-17 Shinko Electric Ind Co Ltd Package for light emitting device
JPH06297040A (en) * 1993-04-13 1994-10-25 Fuji Photo Film Co Ltd Method and device for bending
JPH10163578A (en) * 1996-12-04 1998-06-19 Shinko Electric Ind Co Ltd Manufacture of semiconductor device eyelet from which heatsink for semiconductor device mounting protrudes
JP2000340428A (en) * 1999-05-31 2000-12-08 Tdk Corp Ferrite core for inductor and chip inductor using the same
JP2003161812A (en) * 2001-11-29 2003-06-06 Asahi Glass Co Ltd Circular column lens with slant face
JP2003282776A (en) * 2002-03-26 2003-10-03 Denso Corp Semiconductor device
JP2004356545A (en) * 2003-05-30 2004-12-16 Matsushita Electric Ind Co Ltd Airtight terminal having heat sink, and manufacturing method thereof
JP2005110464A (en) * 2003-10-02 2005-04-21 Mitsubishi Electric Corp Stator core for motor and manufacturing method therefor

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925292A (en) * 1982-07-30 1984-02-09 Fujitsu Ltd Semiconductor laser device
JPH029461A (en) * 1988-06-29 1990-01-12 Matsushita Electric Ind Co Ltd Air cleaner
JPH029461U (en) * 1988-07-04 1990-01-22
JPH02174179A (en) * 1988-12-26 1990-07-05 Hitachi Ltd Optoelectronic device and its manufacture
JPH03286589A (en) * 1990-04-03 1991-12-17 Shinko Electric Ind Co Ltd Package for light emitting device
JPH06297040A (en) * 1993-04-13 1994-10-25 Fuji Photo Film Co Ltd Method and device for bending
JPH10163578A (en) * 1996-12-04 1998-06-19 Shinko Electric Ind Co Ltd Manufacture of semiconductor device eyelet from which heatsink for semiconductor device mounting protrudes
JP2000340428A (en) * 1999-05-31 2000-12-08 Tdk Corp Ferrite core for inductor and chip inductor using the same
JP2003161812A (en) * 2001-11-29 2003-06-06 Asahi Glass Co Ltd Circular column lens with slant face
JP2003282776A (en) * 2002-03-26 2003-10-03 Denso Corp Semiconductor device
JP2004356545A (en) * 2003-05-30 2004-12-16 Matsushita Electric Ind Co Ltd Airtight terminal having heat sink, and manufacturing method thereof
JP2005110464A (en) * 2003-10-02 2005-04-21 Mitsubishi Electric Corp Stator core for motor and manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010199287A (en) * 2009-02-25 2010-09-09 Shinko Electric Ind Co Ltd Method of manufacturing semiconductor device
JP2015082609A (en) * 2013-10-23 2015-04-27 新光電気工業株式会社 Stem for semiconductor package, and semiconductor package

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