JP2007125675A - Residue removing method and micromachine device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a residue removing method capable of removing the residue of a film material of a second film adhered to the inner peripheral surface of an opening of a first film when forming the second film into a prescribed pattern at the bottom of the opening formed on a substrate, and a micromachine device manufacturing method using the same method. <P>SOLUTION: The second film is formed into the prescribed pattern at the bottom of the opening of the first film formed on the substrate. Subsequently, a resin material is filled in the opening of the first film and the resin material is hardened, and thereby the residue made of a film material of the second film is adhered to the resin material and the resin material adhered with the residue is removed from the opening. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a residue removal method and a manufacturing method of a micromachine device.

  In the manufacturing process of an electronic element, a step of sequentially stacking a layer for forming an electronic element and an insulating film on a substrate, forming an opening in the insulating film, and then forming a predetermined film in the opening is there.

  Such a process is included in the manufacturing process of various electronic elements, for example, is included in the manufacturing process of an acoustic sensor mounted on a voice recorder.

  As this acoustic sensor, in recent years, a micromachine device using a technology based on MEMS (Micro Electronic Mechanical System) has been devised.

  This micromachine device has a cavity inside and a capacitor made of a pair of electrode films provided with the cavity interposed therebetween. And, one electrode film constituting the capacitor has a structure that vibrates by sound waves, and the sound wave from the outside is converted into an electric signal by the change in the capacitance of the capacitor that changes as the electrode film vibrates. (For example, refer patent document 1).

  In general, such a micromachine device is manufactured by the following manufacturing method.

  First, after forming a film made of a conductive material on the upper surface of a silicon substrate having a nitride film formed on the surface, a first electrode layer is formed by performing desired patterning or the like.

  Next, after forming a nitride film so as to cover the first electrode layer, a resist mask having an opening above the first electrode layer is formed on the nitride film, and the resist mask is used to form the first resist layer. The nitride film on one electrode layer is selectively removed.

  Next, after a sacrificial film made of glass or the like is formed on the first electrode layer and the nitride film, a film made of a conductive material is formed on the sacrificial film, and then the sacrificial film is sacrificed. A second electrode layer is formed by forming a hole for removing the film by etching.

  Next, an electrode film for taking out an electrode from the first electrode layer and the second electrode layer is formed. Here, a resist mask having openings at positions where the respective electrode films are to be formed is formed on the first electrode layer and the second electrode layer on the sacrificial film, and etching is performed using the resist mask. By performing, an opening for electrode extraction reaching from the surface of the sacrificial film to the first electrode layer and the second electrode layer is formed.

  Next, after forming the electrode film at a predetermined position on the first electrode layer and the second electrode layer by laminating a metal material for the electrode film such as gold while forming the resist mask, Strip the resist mask.

Thereafter, an opening is formed so that the first electrode layer is exposed from the lower surface of the substrate. Finally, etching is performed using an etchant that can etch only the sacrificial film, and the first electrode layer and the second electrode layer are etched. Then, the micromachine device was manufactured by forming a cavity between the first electrode layer and the second electrode layer by removing only the sacrificial film while leaving the electrode film and the nitride film.
JP 2001-231099 A

  However, in the conventional manufacturing method, when the electrode film is formed and the resist mask is peeled off, the electrode film metal material may remain as a residue on the inner peripheral surface of the electrode extraction opening. In the middle of the manufacturing process, the electrode may be peeled off from the opening for electrode extraction, and may adhere to other terminals of the micromachine device and cause problems such as short circuit and malfunction.

  The present inventor aims to provide a residue removal method and a method of manufacturing a micromachine device that can solve the above-described problems.

  Therefore, in the present invention according to claim 1, when the second film is formed in a predetermined pattern on the bottom of the opening of the first film formed on the substrate, the residue attached to the inner peripheral surface of the opening is removed. In the residue removing method, the step of filling the opening with a resin material, the step of attaching the residue to the resin material by curing the resin material filled in the opening, and the removal of the resin material with the residue attached from the opening It was decided to have a process to do.

  According to the second aspect of the present invention, a step of forming an opening in the insulating film on the substrate using a resist mask, a step of laminating a conductive member on the surface of the resist mask and the bottom of the opening, a resist The step of forming a wiring layer made of a conductive member at the bottom of the opening by lifting off the mask, the step of filling the opening with a resin material after the lift-off, and curing the resin material filled in the opening It was decided to provide a residue removal method including a step of attaching a residue made of a conductive member to a material and a step of removing the resin material to which the residue is attached from an opening.

  According to a third aspect of the present invention, there is provided a step of forming an electrode extraction opening in the insulating film on the substrate using a resist mask subjected to predetermined patterning, and an electrode on the surface of the resist mask and the bottom of the opening. A step of laminating materials, a step of removing the resist mask by lifting off, a step of forming an electrode film made of an electrode material at the bottom of the opening, a step of filling the opening with a resin material after the lift-off, and a step of By curing the filled resin material, the step of attaching the electrode material residue adhering to the inner peripheral surface of the opening when the electrode film is formed to the resin material, and the resin material adhering the residue from the opening The present invention provides a method for manufacturing a micromachine device having a step of removing.

  According to a fourth aspect of the present invention, in the method of manufacturing a micromachine device according to the third aspect, the opening is filled with the resin material by applying the resin material to the entire upper surface of the insulating film. And

  According to a fifth aspect of the present invention, in the method for manufacturing a micromachine device according to the fourth aspect, the application of the resin material is performed on the upper surface, the side surface, and the peripheral portion of the lower surface of the insulating film. To do.

  According to a sixth aspect of the present invention, in the method of manufacturing a micromachine device according to any one of the fourth to fifth aspects, the resin material is applied by spin coating.

  According to a seventh aspect of the present invention, in the method for manufacturing a micromachine device according to any one of the third to sixth aspects, the resin material is a high molecular polymer.

  According to the present invention, the following effects can be obtained.

  That is, according to the first aspect of the present invention, when the second film is formed in a predetermined pattern at the bottom of the opening of the first film formed on the substrate, the residue attached to the inner peripheral surface of the opening is removed. In the residue removing method, the step of filling the opening with a resin material, the step of attaching the residue to the resin material by curing the resin material filled in the opening, and the removal of the resin material with the residue attached from the opening When the resin material is removed from the opening, the residue attached to the inner peripheral surface of the opening can be taken into the resin material side by the shrinkage action when the resin material is cured. At the same time, unnecessary residues in the opening can be effectively removed.

  According to the second aspect of the present invention, a step of forming an opening in the insulating film on the substrate using a resist mask, a step of laminating a conductive member on the surface of the resist mask and the bottom of the opening, a resist The step of forming a wiring layer made of a conductive member at the bottom of the opening by lifting off the mask, the step of filling the opening with a resin material after the lift-off, and curing the resin material filled in the opening In order to provide a residue removing method including a step of attaching a residue made of a conductive member to a substrate and a step of removing the resin material to which the residue is attached from the opening, the residue remains on the inner peripheral surface of the opening after lift-off The residue which consists of an electroconductive member can be removed suitably.

  According to a third aspect of the present invention, there is provided a step of forming an electrode extraction opening in the insulating film on the substrate using a resist mask subjected to predetermined patterning, and an electrode on the surface of the resist mask and the bottom of the opening. A step of laminating materials, a step of removing the resist mask by lifting off, a step of forming an electrode film made of an electrode material at the bottom of the opening, a step of filling the opening with a resin material after the lift-off, and a step of By curing the filled resin material, the step of attaching the electrode material residue adhering to the inner peripheral surface of the opening when the electrode film is formed to the resin material, and the resin material adhering the residue from the opening An unnecessary electrode material that remains as a residue due to a shrinking action accompanying the curing of the resin material. Uptake in the resin material, this can be removed with a resin material, it is possible to prevent a short circuit and operation occurrence of failure between due to waste the electrode material electrode.

  According to a fourth aspect of the present invention, in the method of manufacturing a micromachine device according to the third aspect, the opening is filled with the resin material by applying the resin material to the entire upper surface of the insulating film. Therefore, the resin material can be filled at once into the electrode extraction openings of the plurality of electronic elements formed on the substrate.

  According to a fifth aspect of the present invention, in the method for manufacturing a micromachine device according to the fourth aspect, the application of the resin material is performed on the upper surface, the side surface, and the peripheral portion of the lower surface of the insulating film. Therefore, when etching is performed on the portion of the substrate where the resin material is not applied, the film formed by the resin member functions as a protective film, so that adverse effects on the electronic element due to etching are suppressed as much as possible. Product yield can be improved.

  Moreover, in this invention which concerns on Claim 6, in the manufacturing method of the micromachine apparatus of any one of Claims 4-5, since application | coating of a resin material is performed by spin coating, spin coating is characterized by the above-mentioned. Unnecessary electrode material can be effectively pushed out from the surface of the electronic element by the centrifugal force when performing.

  Moreover, in this invention which concerns on Claim 7, since the resin material is a high molecular polymer in the manufacturing method of the micromachine apparatus of any one of Claims 3-6, it heat-processes. Since the resin material can be cured easily and in a relatively short time, it is possible to manufacture a micromachine device that is unlikely to cause a short circuit or malfunction between electrodes without adding a complicated manufacturing process. .

  The method for removing residues according to the present invention provides a method for forming a second film in a predetermined pattern on an inner peripheral surface of an opening of a first film formed on a substrate in a manufacturing process of an electronic device. This is a residue removal method for removing the adhered residue, and can be applied when various electronic devices are manufactured.

 That is, in this residue removing method, after forming each layer for functioning as an electronic element on a substrate, a step of forming an insulating film as a first film on the upper surface thereof, and using a resist mask for the insulating film Forming an opening, laminating a conductive member on the surface of the resist mask and the bottom of the opening of the insulating film, and lifting off the resist mask, thereby forming a second on the bottom of the opening formed in the insulating film. A step of forming a wiring layer made of a conductive member as a film in a predetermined pattern, a step of filling a resin material into the opening of the insulating film after lift-off of the resist mask, and curing the resin material filled in the opening And a step of attaching a residue made of a conductive member to the resin material, and a step of removing the resin material to which the residue is attached from the opening of the insulating film.

 Therefore, due to the shrinking action when the resin material is cured, the residue adhering to the inner peripheral surface of the opening can be taken into the resin material side, and when removing the resin material from the opening, at the same time unnecessary in the opening The residue can be removed effectively.

  Also, in the method of manufacturing a micromachine device according to the present invention, an insulating film as a first film is formed on the upper surface of an electronic element forming layer formed on a substrate, and a resist mask is used for the insulating film to form an electrode of the electronic element. The present invention can be applied to manufacturing a micromachine device that forms an electrode film as a second film by forming an electrode extraction opening for extracting the electrode and laminating an electrode material on the bottom of the opening. Is.

  That is, when manufacturing a micromachine device in which an electrode film needs to be formed at a relatively deep position of a substrate, such as a MEMS (Micro Electronic Mechanical System) device, first, a portion that functions as a micromachine device on a substrate is manufactured. After the structure is formed by stacking a plurality of layers made of a functional material (for example, a semiconductor layer), an insulating film is formed over the layer.

  Next, after forming a resist mask in which an opening for electrode formation is patterned on the insulating film, etching is performed using the resist mask, thereby digging an opening for electrode extraction at a predetermined position of the insulating film. .

  Subsequently, the electrode material is laminated through the resist mask, thereby laminating the electrode material so as to have a predetermined thickness in the electrode extraction opening, and then removing the resist film by lift-off.

  At this time, since unnecessary electrode material may remain as a residue on the inner peripheral surface of the electrode extraction opening, etc., a resin material is filled in the electrode extraction opening in order to remove the residue made of the electrode material.

  At this time, a high molecular polymer is used as the resin material to be filled in the electrode extraction opening.

  Next, heat treatment is performed to cure the polymer filled in the electrode extraction opening. By this heat treatment, the polymer polymer is cured and contracted to take in unnecessary electrode materials.

  Next, an unnecessary electrode material is removed together with the polymer polymer by removing the polymer polymer in which unnecessary electrode material is taken.

  In this way, unnecessary electrode material generated in the middle of the manufacturing process can be effectively removed, so that the occurrence of short-circuiting or malfunctioning of electrodes due to unnecessary electrode material remaining as a residue can occur in advance. Can be prevented.

  In addition, the high molecular polymer is filled into the electrode extraction opening by applying the high molecular polymer to the entire upper surface of the substrate on which the electronic element is formed.

  Therefore, the polymer polymer can be filled at a time into the electrode extraction openings of a large number of electronic elements formed on the same substrate.

  In addition, the application of the high molecular polymer is performed on the upper surface, the side surface, and the peripheral portion of the lower surface of the substrate on which the electronic element is formed, so that all portions other than the inner side of the peripheral portion of the lower surface of the substrate are all on the substrate surface It is made to coat | cover with a high polymer film.

  At this time, in order to strengthen the adhesive force between the polymer and the substrate, a coupling agent is applied to the surface of the substrate in advance before the polymer is applied.

  As a result, when etching using a strong base or the like is performed on the portion of the substrate surface where the polymer polymer is not applied, the polymer polymer film functions as a protective film and protects the electronic device from the etchant. Therefore, the adverse effect of the etching on the electronic device can be suppressed as much as possible, and the product yield can be improved.

  In addition, the high molecular polymer is applied by spin coating. Specifically, first, after attaching a polymer to the vicinity of the periphery of the lower surface of the substrate, the polymer is applied to the periphery of the lower surface of the substrate and the lower half of the side surface by rotating the substrate horizontally at high speed. To do.

  Here, after performing heat treatment at a relatively low temperature, a high molecular weight polymer is attached to a substantially central position of the upper surface of the substrate, and then the substrate is rotated at a high speed in the horizontal direction so that the entire upper surface of the substrate and upper half of the side surface A high molecular polymer is applied to the surface.

  Thereby, an unnecessary electrode material can be effectively extruded from the surface of the electronic element by a centrifugal force at the time of spin coating.

  Hereinafter, an embodiment of a residue removal method and a micromachine device manufacturing method according to the present invention will be described in detail with reference to the drawings.

  In the present embodiment, a process of manufacturing a MEMS (Micro Electronic Mechanical System) microphone as a micromachine device will be described as an example.

  When manufacturing a MEMS microphone, first, as shown in FIG. 1, a first nitride (silicon nitride) film 2 is formed so as to cover the entire surface of a Si (silicon) substrate 1, and then a Si substrate is formed. An opening for forming a recess 14 for collecting sound (see FIG. 9) in the Si substrate 1 in a later step is formed in the first nitride film 2 on the back surface side by using a photolithography technique.

  Next, a first PSG (Phospho-Silicate Glass) film 3 that is an insulating film is formed as a sacrificial film on the surface of the Si substrate 1 by CVD (Chemical Vapor Deposition).

  Next, after forming a polysilicon film containing phosphorus on the surface of the first PSG film 3, the polysilicon film is subjected to predetermined patterning, and unnecessary portions of the polysilicon film are removed to remove the first electrode. Layer 5a is formed.

  Next, a second PSG film 4 and a third PSG 6 which are insulating films are formed as sacrificial films sequentially on all of these upper surfaces by CVD, and then a portion of the third PSG film 6 for forming the second electrode layer 5b, The portions of the second PSG film 4 and the second PSG film 6 that form the three-electrode layer 5c are removed by etching.

  At the same time, the first nitride film 2, the first to third PSG films 3, 4, and 6 and the second extraction electrode film 11b are formed at a portion where a first extraction electrode film 11a (see FIG. 4) described later is formed. The second to third PSG films 4 and 6 that form portions (see FIG. 4) are removed by etching.

  Next, after forming a polysilicon film containing phosphorus on all of these upper surfaces, the polysilicon film is subjected to predetermined patterning, and unnecessary portions of the polysilicon film are removed to remove the second electrode layer 5b. A third electrode layer 5c is formed.

  Next, after forming a second nitride film 7 for insulating the electrode layers on all of these upper surfaces, the second nitride film 7 is subjected to predetermined patterning, and unnecessary portions of the second nitride film 7 are formed. The ride film 7 is removed, and then a fourth PSG film 8 that is an insulating film is formed as a sacrificial film by CVD, thereby forming a basic structure of a MEMS microphone as a semiconductor element.

  In this embodiment, a PSG film, which is an insulating film, is formed as a sacrificial film. However, the sacrificial film is not limited to this, and NSG (nitride film / oxide film) or TEOS (teroethoxy). Any insulating film can be used as long as a cavity can be formed in the semiconductor layer by etching in a later process, such as a silane film or a SOG (Spin On Glass) film.

  Next, as shown in FIG. 2, a resist mask 9 is formed on the basic structure of the MEMS microphone shown in FIG. 1, and an electrode extraction opening 10 (see FIG. 3) to be described later is formed in the resist mask 9. An opening for patterning is patterned.

  Next, as shown in FIG. 3, etching using the resist mask 9 is performed to form the first electrode layer 5a, the second electrode layer 5b, and the electrode extraction opening 10 that reaches the surface of the Si substrate 1, respectively. To do.

  Next, in a state where the resist mask 9 is formed as shown in FIG. 4, a sputtering method is performed so that Au (gold) 11 as an electrode material has a predetermined thickness (thickness smaller than the first PSG film 3). Use to stack.

  In this embodiment, Au is used as the electrode material, but the electrode material is not limited to this, and Ti (titanium), Pt (platinum), Cr (chromium), Ni (nickel), etc. Any suitable material can be selected and used depending on the material of the electrode layer.

  Thus, the first extraction electrode film 11a is formed on the surface of the Si substrate 1 on the bottom surface of the electrode extraction opening 10, and the second extraction electrode film 11b is formed on the surface of the second electrode layer 5b on the bottom surface of the electrode extraction opening 10, A third extraction electrode 11c is formed on the surface of the first electrode layer 5a.

  Next, the resist mask 9 is lifted off (peeled) by wet etching as shown in FIG.

  At this time, unnecessary Au11 adheres to the inner wall of the electrode extraction opening 10 as a residue 11d. In the method of manufacturing a micromachine device according to the present invention, this residue 11d is effectively removed by the manufacturing steps shown in FIG. I am doing so.

  Specifically, as shown in FIG. 6, first, the silane coupling agent 12 is applied to the upper surface, the lower surface, and the side surface of the structure shown in FIG. 5 by spin coating.

  This silane coupling agent 12 is applied in order to strengthen the adhesive force between the polymer 13 (see FIGS. 7 and 8) applied in the next step and the structure shown in FIG.

  Here, the silane coupling agent 12 is preferably applied only to the surface of the first nitride film 2 on the lower surface side of the Si substrate 1, but the lower exposed portion of the Si substrate 1 (a portion to be etched later) Is not a problem because it is removed during the subsequent etching process.

  Next, as shown in FIG. 7, a polymer 13 as a resin material is applied to the lower surface side of the Si substrate 1 by spin coating.

  At this time, first, a polymer 13 is applied in the vicinity of the lower surface side peripheral portion of the Si substrate 1, and then the Si substrate 1 is rotated in the horizontal direction, whereby the lower surface side peripheral portion of the Si substrate 1 and the Si substrate 1 are The lower side of the side surface is covered with the polymer 13.

  Next, by performing a heat treatment (baking), the polymer 13 is cured and adhered to the first nitride film 2.

  However, in this heat treatment, the polymer polymer 13 applied to the lower surface side of the Si substrate 1 and the polymer polymer 13 applied to the upper surface side of the Si substrate 1 in the next step are surely polymerized. Bake at a relatively low temperature that does not allow 13 to dry completely.

  Next, as shown in FIG. 8, the polymer 13 is applied to the upper surface side of the Si substrate by a spin code.

  At this time, first, a polymer 13 is applied to the surface of the silane coupling agent 12 applied on the fourth PSG film 8 at a substantially central position on the upper surface side of the Si substrate 1. Rotate to

  Then, by this centrifugal force of rotation, the polymer polymer 13 is filled in the electrode extraction opening 10, the residue 11 d adhering to the surface of the fourth PSG film 8 is extruded, and the entire upper surface side of the Si substrate 1 is further extruded. The upper side surface of the Si substrate 1 is covered with the polymer 13.

  Next, the polymer 13 is cured by heat treatment and is securely adhered to the fourth PSG film 8.

  In the heat treatment performed here, baking is performed at a higher temperature than the heat treatment performed in the step shown in FIG. 7 in order to completely dry the polymer 13.

  In particular, by performing this heat treatment, the polymer 13 shrinks due to the evaporation of the solvent inside, and the residue 11d adhering to the inner wall of the electrode extraction opening 10 by this shrinking action is inside the polymer 13. Will be captured.

  Next, as shown in FIG. 9, a concave portion 14 for collecting sound is formed by etching the exposed portion on the lower surface side of the Si substrate 1.

  At this time, wet etching using a strong base (KOH) is performed as an etchant, so that a slight peeling portion 15 is generated in the polymer polymer 13 in the vicinity of the opening end of the recess 14. In this embodiment, FIG. As shown, the polymer 13 is applied not only to cover the entire upper surface side of the Si substrate 1 but also to cover the entire side surface of the Si substrate 1 and further to the peripheral edge of the lower surface side. The peeling portion 15 of the polymer 13 does not spread to the upper surface side of the Si substrate 1.

  Therefore, the basic structure of the MEMS microphone can be reliably protected from the strong base by preventing the strong base as an etchant from touching the basic structure of the MEMS microphone formed on the upper surface side of the Si substrate.

  Next, as shown in FIG. 10, the polymer 13 is stripped using an organic stripping solution such as IPA (isopropyl alcohol) or acetone.

  At this time, since the residue 11d adhering to the inner wall of the electrode extraction opening 10 is already taken into the polymer polymer 13, the basic structure of the MEMS microphone together with the polymer polymer 13 is obtained. Removed from.

  Finally, wet etching using an HF (hydrogen fluoride) etchant capable of etching only the sacrificial film is performed to remove the first to fourth PSG films 3, 4, 6, and 8, and the micromachine device A cavity is formed inside the, thereby completing the MEMS microphone.

  As described above, according to the method for manufacturing a micromachine device according to the present invention, when manufacturing a micromachine device in which the extraction electrode film needs to be formed at a relatively deep position of the substrate as represented by the MEMS device, the extraction electrode is used. After the film formation process is completed, the resin material is applied and heat-treated, so that unnecessary electrode material (residue) adhering to the inner wall of the electrode extraction opening is taken into the resin material. Because when removing this resin material, even the residue can be removed together, so there is no possibility that the residue of unnecessary electrode material generated during the manufacturing process will adhere to other electrodes and cause short circuit, reliability High micromachine device can be manufactured.

  Moreover, when applying this resin material, it is applied so as to cover the upper surface side and side surface side of the substrate and even the peripheral portion on the lower surface side, so that an etchant having a relatively high etching power such as a strong base is applied. Even when etching is performed using a film, the film formed of this resin material is not peeled off on the upper surface side of the substrate, and the electronic elements formed on the substrate can be effectively protected from the etchant.

It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment. It is sectional explanatory drawing which shows the manufacturing process of the micromachine apparatus which concerns on this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si substrate 2 1st nitride film 3 1st PSG film 4 2nd PSG film 5a 1st electrode layer 5b 2nd electrode layer 5c 3rd electrode layer 6 3rd PSG film 7 2nd nitride film 8 4th PSG film 9 Resist mask 10 Electrode extraction opening 11 Au
11a 1st extraction electrode film 11b 2nd extraction electrode film 11c 3rd extraction electrode film 12

Claims (7)

In the residue removal method of removing the residue attached to the inner peripheral surface of the opening when the second film is formed in a predetermined pattern at the bottom of the opening of the first film formed on the substrate,
Filling the opening with a resin material;
A step of adhering the residue to the resin material by curing the resin material filled in the opening;
Removing the resin material to which the residue is adhered from the opening. Forming an opening in the insulating film on the substrate using a resist mask;
Laminating a conductive member on the surface of the resist mask and the bottom of the opening;
Forming a wiring layer made of the conductive member at the bottom of the opening by lifting off the resist mask;
Filling the opening with the resin material after the lift-off;
Curing the resin material filled in the opening to attach the residue made of a conductive member to the resin material; and
Removing the resin material to which the residue is adhered from the opening. Forming an electrode extraction opening on the insulating film on the substrate using a resist mask subjected to predetermined patterning;
Laminating electrode material on the surface of the resist mask and the bottom of the opening;
Removing the resist mask by lifting off, and forming an electrode film made of an electrode material at the bottom of the opening;
Filling the opening with a resin material after the lift-off;
Curing the resin material filled in the opening to attach the residue of the electrode material attached to the inner peripheral surface of the opening to the resin material when the electrode film is formed;
And removing the resin material to which the residue is adhered from the opening.   4. The method of manufacturing a micromachine device according to claim 3, wherein the resin material is filled into the opening by applying the resin material over the entire upper surface of the insulating film.   5. The method of manufacturing a micromachine device according to claim 4, wherein the application of the resin material is performed on an upper surface, a side surface, and a peripheral portion of the lower surface of the insulating film.   6. The method of manufacturing a micromachine device according to claim 4, wherein the application of the resin material is performed by spin coating.   The method for manufacturing a micromachine device according to claim 3, wherein the resin material is a polymer.

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