JP2007100191A - Apparatus and method for forming monolayer - Google Patents
Apparatus and method for forming monolayer Download PDFInfo
- Publication number
- JP2007100191A JP2007100191A JP2005294037A JP2005294037A JP2007100191A JP 2007100191 A JP2007100191 A JP 2007100191A JP 2005294037 A JP2005294037 A JP 2005294037A JP 2005294037 A JP2005294037 A JP 2005294037A JP 2007100191 A JP2007100191 A JP 2007100191A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- self
- film forming
- chamber
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
この発明は、基板上に自己組織化単分子膜を形成する装置及び方法に関するものである。 The present invention relates to an apparatus and method for forming a self-assembled monolayer on a substrate.
原子、分子、微粒子等の微小要素は、自発的に集合し規則的な配列を形作ることがあるが、このような自己組織化現象は、微小要素を集積化して材料・デバイスを構築するボトムアップ・ナノテクノロジーにおいて重要な役割を果たすと考えられる。自己組織化を利用した材料プロセスのひとつに、有機分子の単層膜／多層膜形成がある。ある種の有機分子が固体表面への特異な吸着現象を示すことは古くから知られていたが、近年の研究によって、吸着の過程で吸着分子同士の相互作用によって、自発的に集合体を形成し、吸着分子が緻密に集合しかつ配向が揃った分子膜が形成される場合があることが明らかになってきた。 Microelements such as atoms, molecules, and fine particles may spontaneously assemble to form a regular array, but this self-organization phenomenon is a bottom-up that builds materials and devices by integrating microelements.・ It is considered to play an important role in nanotechnology. One of the material processes using self-organization is the formation of single-layer / multi-layer films of organic molecules. It has long been known that certain organic molecules exhibit a unique adsorption phenomenon on the surface of solids, but recent research has led to spontaneous formation of aggregates through the interaction of adsorbed molecules during the adsorption process. However, it has been clarified that a molecular film in which adsorbed molecules are densely gathered and aligned is sometimes formed.
特定の物質に対して親和性を有する有機分子の溶液に、その物質からなる基板を浸漬すると、有機分子が材料表面に化学吸着し有機薄膜が形成されるが、この吸着分子層が一層の場合、すなわち単分子膜が形成される場合には、当該有機薄膜は自己組織化単分子膜（Self-Assembled Monolayer, SAM）と呼ばれる。近時ＳＡＭに関する研究が大きく進展し、基礎・応用の両面から注目されるようになっている。 When a substrate made of a substance is immersed in a solution of an organic molecule that has affinity for a specific substance, the organic molecule is chemically adsorbed on the material surface to form an organic thin film. That is, when a monomolecular film is formed, the organic thin film is called a self-assembled monolayer (SAM). Recently, research on SAM has made great progress and has attracted attention from both basic and applied aspects.
例えば、表面に酸化膜が形成されたシリコン基板に、気相法により有機シラン分子のＳＡＭを形成するには、従来、図４に示すように、密閉系システムによる方法が用いられている。この方法においては、オーブン１２中に、有機シランを入れた容器６とシリコン基板２を入れた密閉容器１３を置き、オーブン１２を有機シランの沸点まで加熱する。すると、有機シランは気化し、シリコン基板２表面のＯＨ基と有機シランが反応し、ＳＡＭが形成される。 For example, in order to form a SAM of an organosilane molecule on a silicon substrate having an oxide film formed on the surface by a vapor phase method, a method using a closed system is conventionally used as shown in FIG. In this method, a container 6 containing an organosilane and a sealed container 13 containing a silicon substrate 2 are placed in an oven 12, and the oven 12 is heated to the boiling point of the organosilane. Then, the organic silane is vaporized, and the OH group on the surface of the silicon substrate 2 reacts with the organic silane to form SAM.
しかしながら、このような方法では、密閉容器１３内の有機シラン濃度が必要以上に高くなり、過剰な有機シランがシリコン基板２上に付着して、有機シランが次々に重合を起こすことがあり、シリコン基板２に結合した有機シラン分子の長さが不均一となり、歩留まりが悪かった。また、このような方法では大面積の基板にＳＡＭを形成することは難しい。 However, in such a method, the concentration of the organic silane in the sealed container 13 becomes higher than necessary, and excessive organic silane may adhere to the silicon substrate 2, and the organic silane may cause polymerization one after another. The length of the organosilane molecules bonded to the substrate 2 was nonuniform, and the yield was poor. Moreover, it is difficult to form a SAM on a large-area substrate by such a method.
そこで本発明は、均一かつ細密に充填したＳＡＭを大面積の基板に形成することを可能とする装置及び方法を提供すべく図ったものである。 Accordingly, the present invention is intended to provide an apparatus and a method capable of forming a uniformly and finely packed SAM on a large-area substrate.
すなわち本発明に係る単分子膜形成装置は、自己組織化分子を含有する液体原料を気化し、基板上に自己組織化単分子膜を形成する装置であって、前記基板を内部に保持する成膜室と、前記液体原料を前記成膜室内に直接噴射する噴射弁を備えていることを特徴とする。 That is, the monomolecular film forming apparatus according to the present invention is an apparatus for vaporizing a liquid raw material containing self-assembled molecules to form a self-assembled monomolecular film on the substrate, and for holding the substrate inside. A film chamber and an injection valve for directly injecting the liquid material into the film formation chamber are provided.
このような構成を有する本発明によれば、自己組織化分子を含有する液体原料を噴射弁から前記成膜室内に直接噴射することにより、噴射弁の開口時間等を制御することにより、成膜室内の自己組織化分子濃度を調節することができる。このため、過剰な自己組織化分子が基板上に付着し、自己組織化分子同士が反応し重合して不均一に長鎖化するのを防ぐことができる。また、噴射弁で噴霧した液体原料を気化させ、均一かつ緻密に基板上に充填し、たとえ基板に段差がある場合でも確実に段差被覆を行うことができる。 According to the present invention having such a configuration, the liquid raw material containing self-assembled molecules is directly injected from the injection valve into the film formation chamber, thereby controlling the opening time of the injection valve, etc. The self-assembled molecular concentration in the room can be adjusted. For this reason, it is possible to prevent excessive self-assembled molecules from adhering to the substrate, and the self-assembled molecules to react with each other and be polymerized to form a non-uniform long chain. In addition, the liquid raw material sprayed by the injection valve is vaporized and filled on the substrate uniformly and densely, so that even if the substrate has a step, it is possible to reliably cover the step.
本発明に係る単分子膜形成装置は、更に前記基板を加熱するためのヒータと、前記成膜室内を減圧するためのポンプを備えていることが好ましい。基板上に自己組織化分子が単分子層を形成するように付着した後、前記ヒータで加熱して基板の温度を自己組織化分子の沸点より高くすることにより、自己組織化分子が過剰に基板に付着することを防止でき、自己組織化分子の重合が進行するのを防ぐことができる。また、ポンプにより成膜室内を減圧することにより自己組織化分子の沸点が下がるので、自己組織化分子の過剰な付着を防ぐためのヒータによる基板の加熱温度を下げることができ、基板上に形成されたＳＡＭの熱分解が防止される。また、減圧した成膜室内に液体原料を噴霧するので、液体原料を減圧沸騰させ気化させることができる。従って、本発明によれば、液体原料を入れた容器を加熱してキャリアガスによりバブリングして液体原料を気化させるような従来の気化方法の問題、即ち液体原料の加熱によりその分解が生じることを可及的に防止することができる。 The monomolecular film forming apparatus according to the present invention preferably further includes a heater for heating the substrate and a pump for depressurizing the film forming chamber. After the self-assembled molecules are deposited on the substrate so as to form a monomolecular layer, the substrate is heated by the heater so that the temperature of the substrate is higher than the boiling point of the self-assembled molecules. Can be prevented, and the polymerization of self-assembled molecules can be prevented from proceeding. In addition, since the boiling point of the self-assembled molecules is lowered by reducing the pressure in the film formation chamber with a pump, the heating temperature of the substrate with a heater to prevent excessive adhesion of the self-assembled molecules can be lowered and formed on the substrate. The thermal decomposition of the formed SAM is prevented. Further, since the liquid raw material is sprayed into the reduced pressure film formation chamber, the liquid raw material can be boiled under reduced pressure and vaporized. Therefore, according to the present invention, there is a problem of the conventional vaporization method in which a liquid raw material is heated and bubbled with a carrier gas to vaporize the liquid raw material, that is, the decomposition of the liquid raw material is caused by heating. It can be prevented as much as possible.
このような単分子膜形成装置を用いて基板上に自己組織化単分子膜を形成するには、前記成膜室内を減圧し、前記成膜室内に前記液体原料を噴射して、前記成膜室内を所定濃度の前記液体原料雰囲気で満たした後、前記成膜室内にパージ用ガスを導入し前記液体原料雰囲気を除去する方法によることができる。 In order to form a self-assembled monomolecular film on a substrate using such a monomolecular film forming apparatus, the film formation chamber is decompressed, the liquid material is injected into the film formation chamber, and the film formation is performed. After the chamber is filled with the liquid source atmosphere having a predetermined concentration, a purge gas is introduced into the film forming chamber to remove the liquid source atmosphere.
又は、前記成膜室内に前記液体原料を噴射して、前記成膜室内を所定濃度の前記液体原料雰囲気で満たした後、前記成膜室内を前記ポンプで吸引して前記液体原料雰囲気を除去する方法によって、基板上に自己組織化単分子膜を形成してもよい。 Alternatively, after the liquid source is injected into the film formation chamber and the film formation chamber is filled with the liquid source atmosphere having a predetermined concentration, the liquid source atmosphere is removed by sucking the film formation chamber with the pump. A self-assembled monolayer may be formed on the substrate by a method.
このように本発明によれば、均一かつ細密に充填した自己組織化単分子膜を大面積の基板上に形成することができる。これにより単分子膜を利用した各種デバイスやセンサを安価に作成することが可能となる。また、基板上を単分子膜で修飾することにより、基板表面（界面）を改質することも可能となる。 As described above, according to the present invention, a self-assembled monolayer filled uniformly and finely can be formed on a large-area substrate. This makes it possible to produce various devices and sensors using monomolecular films at low cost. In addition, the substrate surface (interface) can be modified by modifying the substrate with a monomolecular film.
以下に本発明の一実施形態について図面を参照して説明する。 An embodiment of the present invention will be described below with reference to the drawings.
本実施形態に係る単分子膜形成装置１は、図１に示すように、加工対象である基板２上にＳＡＭを形成する装置であり、自己組織化分子を含有する液体原料を気化し、基板２上に自己組織化分子を付着させ単分子膜を形成するものである。具体的な主構成は、基板２を内部に保持する成膜室３と、前記液体原料を前記成膜室３内に直接噴射する噴射弁４と、噴射弁４に液体原料を供給する原料供給管５とからなる。 As shown in FIG. 1, a monomolecular film forming apparatus 1 according to the present embodiment is an apparatus for forming a SAM on a substrate 2 to be processed, and vaporizes a liquid raw material containing self-assembled molecules. A self-assembled molecule is attached on 2 to form a monomolecular film. Specifically, the main structure is a film forming chamber 3 that holds the substrate 2 therein, an injection valve 4 that directly injects the liquid material into the film forming chamber 3, and a material supply that supplies the liquid material to the injection valve 4. It consists of a tube 5.
本実施形態においては、液体原料は、例えばステンレス製の容器６に保存されている。そして、液体原料は当該容器６に圧入された加圧Ｎ２ガス（又はＡｒガス等の液体原料に対して不活性なガス）により原料供給管５を通り、後述する噴射弁４を介して成膜室３内部に霧状に供給される。更に、液体原料は、噴射弁４から成膜室３内に噴霧されると同時に、気化されて成膜室３内に充満される。 In this embodiment, the liquid raw material is stored in, for example, a stainless steel container 6. The liquid raw material passes through the raw material supply pipe 5 by a pressurized N 2 gas (or a gas inert to the liquid raw material such as Ar gas) press-fitted into the container 6 and is formed through an injection valve 4 described later. The mist is supplied into the membrane chamber 3. Further, the liquid material is sprayed from the injection valve 4 into the film forming chamber 3, and at the same time, it is vaporized and filled into the film forming chamber 3.
成膜室３は、保持機構により内部に加工対象となる基板２を保持するものであり、更に基板２を加熱するための基板ヒータ７を有している。そして、成膜室３は、真空ポンプ８によって減圧可能に構成されている。また、成膜室３内に充填した気化した液体原料を成膜室３から除去するためのパージ用Ｎ２ガスを供給するパージ用ガス供給管９も配設されている。このパージ用ガス供給管９は、マスフローコントローラ（ＭＦＣ）１０によりパージ用Ｎ２ガスの供給流量を制御されている。なお、基板保持機構は、ごく一般的なものであるため、詳細な説明及び図示は省略する。 The film forming chamber 3 holds the substrate 2 to be processed inside by a holding mechanism, and further has a substrate heater 7 for heating the substrate 2. The film forming chamber 3 is configured to be depressurized by a vacuum pump 8. Further, a purge gas supply pipe 9 for supplying a purge N 2 gas for removing the vaporized liquid material filled in the film formation chamber 3 from the film formation chamber 3 is also provided. In the purge gas supply pipe 9, the supply flow rate of the purge N 2 gas is controlled by a mass flow controller (MFC) 10. Since the substrate holding mechanism is very general, detailed description and illustration are omitted.
噴射弁４は、液体原料を成膜室３内に直接噴射するものであり、成膜室３の上部に、基板２の面と対向するように設けられている。そして、噴射弁３の開閉を制御するための噴射弁コントローラ１１により、開閉を制御される。 The injection valve 4 directly injects the liquid material into the film forming chamber 3 and is provided on the upper portion of the film forming chamber 3 so as to face the surface of the substrate 2. The opening / closing is controlled by an injection valve controller 11 for controlling the opening / closing of the injection valve 3.
次にこのように構成した単分子膜形成装置１を用いた単分子膜形成方法を説明する。 Next, a monomolecular film forming method using the monomolecular film forming apparatus 1 configured as described above will be described.
液体原料の蒸気圧が大気圧より小さい場合は、まず、成膜室３内を真空ポンプ８によって減圧し、成膜室３に噴射された液体原料が気化するように、即ち成膜室３内の圧力が液体原料の蒸気圧より小さくなるように圧力調節する。次いで、噴射弁コントローラ１１を操作して噴射弁４を開き、成膜室３内に液体原料を直接噴射して、成膜室３内を所定濃度の液体原料雰囲気で満たす。ここで、成膜室３内の液体原料の濃度は、基板２上に自己組織化分子の単分子層が形成されるよう噴射弁４の開口時間を制御して調整する。次いで、パージ用ガス供給管９のバルブを開けて成膜室３内にパージ用Ｎ２ガスを導入し、成膜室３内から液体原料雰囲気を除去し、基板２上への過剰な自己組織化分子の付着を防ぎ、自己組織化分子の重合反応が進行しないようにする。この際、パージ用Ｎ２ガスの導入と合わせて真空ポンプ８で成膜室３内を吸引する。 When the vapor pressure of the liquid raw material is lower than the atmospheric pressure, first, the inside of the film forming chamber 3 is depressurized by the vacuum pump 8 so that the liquid raw material injected into the film forming chamber 3 is vaporized, that is, inside the film forming chamber 3. The pressure is adjusted so that the pressure of the liquid becomes smaller than the vapor pressure of the liquid raw material. Next, the injection valve controller 11 is operated to open the injection valve 4, and the liquid material is directly injected into the film formation chamber 3 to fill the film formation chamber 3 with a liquid material atmosphere of a predetermined concentration. Here, the concentration of the liquid raw material in the film forming chamber 3 is adjusted by controlling the opening time of the injection valve 4 so that a monomolecular layer of self-assembled molecules is formed on the substrate 2. Next, the purge gas supply pipe 9 is opened to introduce purge N 2 gas into the film forming chamber 3, the liquid source atmosphere is removed from the film forming chamber 3, and excessive self-organization on the substrate 2 is performed. To prevent the adhesion of chemical molecules and prevent the polymerization reaction of self-assembled molecules from proceeding. At this time, the inside of the film forming chamber 3 is sucked by the vacuum pump 8 together with the introduction of the purge N 2 gas.
液体原料の蒸気圧が大気圧より大きい場合は、噴射弁コントローラ１１を操作して噴射弁４を開き、成膜室３内に液体原料を直接噴射して、成膜室３内を所定濃度の液体原料雰囲気で満たす。ここで、成膜室３内の液体原料の濃度は、基板２上に自己組織化分子の単分子層が形成されるよう噴射弁４の開口時間を制御して調整する。次いで、成膜室３内を真空ポンプ８によって吸引して、成膜室３内から液体原料雰囲気を除去し、基板２上への過剰な自己組織化分子の付着を防ぎ、自己組織化分子の重合反応が進行しないようにする。この際、パージ用ガス供給管９のバルブは開けておく。なお、この場合も予め成膜室３内を減圧雰囲気に圧力調節し、気化を促進させるようにしてもよい。 When the vapor pressure of the liquid raw material is larger than the atmospheric pressure, the injection valve controller 11 is operated to open the injection valve 4, and the liquid raw material is directly injected into the film forming chamber 3 so that the inside of the film forming chamber 3 has a predetermined concentration. Fill with liquid source atmosphere. Here, the concentration of the liquid raw material in the film forming chamber 3 is adjusted by controlling the opening time of the injection valve 4 so that a monomolecular layer of self-assembled molecules is formed on the substrate 2. Next, the inside of the film forming chamber 3 is sucked by the vacuum pump 8 to remove the liquid source atmosphere from the inside of the film forming chamber 3, thereby preventing excessive self-assembled molecules from adhering to the substrate 2. Prevent the polymerization reaction from proceeding. At this time, the valve of the purge gas supply pipe 9 is kept open. In this case as well, the pressure inside the film forming chamber 3 may be adjusted to a reduced pressure atmosphere in advance to promote vaporization.
いずれの場合も、基板２上にＳＡＭが形成されたあとは、基板２を基板ヒータ７により加熱して、基板２の温度をその際の成膜室３内の圧力下における自己組織化分子の沸点より高い温度にする。これにより基板２への過剰な自己組織化分子の付着及び自己組織化分子の重合反応を防ぐことができる。 In any case, after the SAM is formed on the substrate 2, the substrate 2 is heated by the substrate heater 7, and the temperature of the substrate 2 is adjusted under the pressure in the film formation chamber 3 at that time. The temperature is higher than the boiling point. Thereby, it is possible to prevent excessive self-assembled molecules from attaching to the substrate 2 and polymerization reaction of the self-assembled molecules.
本実施形態に適用可能な基板２と液体原料に含有される自己組織化分子は特に限定されないが、以下の表１に記載された組み合わせによることで、基板２上にＳＡＭを形成することができる。 The substrate 2 applicable to the present embodiment and the self-assembled molecules contained in the liquid raw material are not particularly limited, but a SAM can be formed on the substrate 2 by the combination described in Table 1 below. .
表１に記載の組み合わせ以外であっても、基板にリンカーとして機能する第１のＳＡＭを形成した後、目的の化合物を固定化したり、目的の化合物の末端を修飾することによりＳＡＭを形成することができる。例えば、Dithiobis(succinimidyl
undecanoate)を用いて金（Ａｕ）基板上にＳＡＭを形成し、これをリンカーとしてタンパク質やペプチドを固定化することができる。また、ＤＮＡの末端をチオール化することにより金（Ａｕ）基板上にＤＮＡ単分子膜を形成することができる。
Even if other than the combinations shown in Table 1, after forming the first SAM that functions as a linker on the substrate, the SAM is formed by immobilizing the target compound or modifying the end of the target compound Can do. For example, Dithiobis (succinimidyl
SAM can be formed on a gold (Au) substrate using undecanoate, and proteins and peptides can be immobilized using this as a linker. In addition, a DNA monomolecular film can be formed on a gold (Au) substrate by thiolation of DNA ends.
前記液体原料は有機溶媒中に自己組織化分子が溶解しているものであってもよく、このような有機溶媒としては、同じ温度において自己組織化分子よりも蒸気圧が大きい有機化合物が好ましい。自己組織化分子とそれよりも蒸気圧が大きい有機化合物を混合して液体原料とすることにより、液体原料の蒸気圧が上がり、液体原料が気化しやすくなる。 The liquid raw material may be one in which self-assembled molecules are dissolved in an organic solvent, and such an organic solvent is preferably an organic compound having a vapor pressure higher than that of the self-assembled molecules at the same temperature. By mixing a self-assembled molecule and an organic compound having a higher vapor pressure to obtain a liquid material, the vapor pressure of the liquid material is increased, and the liquid material is easily vaporized.
このような本実施形態によれば、成膜室３に自己組織化分子を含有する液体原料を直接噴射することにより、成膜室３内の自己組織化分子の濃度の調整が容易となる。また、基板２上にＳＡＭが形成された後、速やかに成膜室３内の残留自己組織化分子を除去すること、及び、基板２を自己組織化分子の沸点以上の温度に加熱することにより、基板２に過剰な自己組織化分子が付着し、自己組織化分子の重合反応が進行することを防ぐことができる。よって、歩留まりよく、基板２上に均一な単分子膜を形成することができる。 According to the present embodiment, the concentration of the self-assembled molecules in the film forming chamber 3 can be easily adjusted by directly injecting the liquid raw material containing the self-assembled molecules into the film forming chamber 3. Further, after the SAM is formed on the substrate 2, the residual self-assembled molecules in the film forming chamber 3 are quickly removed, and the substrate 2 is heated to a temperature equal to or higher than the boiling point of the self-assembled molecules. Further, it is possible to prevent excessive self-assembled molecules from adhering to the substrate 2 and the polymerization reaction of the self-assembled molecules to proceed. Therefore, a uniform monomolecular film can be formed on the substrate 2 with a high yield.
なお、本発明は前記実施形態に限られるものではない。例えば、単分子膜形成装置１には、基板２に酸化膜を形成したり、基板２上にリンカーとなる第１のＳＡＭを形成したり、基板２を洗浄したりするための前処理室が備わっていてもよい。 The present invention is not limited to the above embodiment. For example, the monomolecular film forming apparatus 1 has a pretreatment chamber for forming an oxide film on the substrate 2, forming a first SAM as a linker on the substrate 2, and cleaning the substrate 2. It may be provided.
また、図２に示すように、成膜室３内への液体原料の噴射と、パージ用Ｎ２ガスの供給を交互に繰り返し、複数の基板２へのＳＡＭ形成処理を連続して行ってもよい。この場合に用いる単分子膜形成装置１は、図３に示すように、成膜室３とポンプ８との間のライン１４に制御バルブ（閉止バルブ）１２を配設し、噴射弁４から原料噴射後一定時間（例えば、自己組織化分子の付着に必要な時間）は閉止バルブ１２を閉じ（バルブ１３も閉）、成膜室３内を密閉系に保つよう構成する。この構成により少量の液体原料で単分子膜を形成し、更に、そのバルブ１２をバイパスし、ライン１４より細い（断面積の小さい）ライン１５を更に設け、そのライン１５にもバルブ１３を介装することで、バルブ１２及びバルブ１３の切換えでポンプ８に連通させるラインを切換え可能に構成してもよい。 In addition, as shown in FIG. 2, the SAM formation process on the plurality of substrates 2 may be continuously performed by alternately repeating the injection of the liquid material into the film forming chamber 3 and the supply of the purge N 2 gas. Good. In the monomolecular film forming apparatus 1 used in this case, as shown in FIG. 3, a control valve (closing valve) 12 is disposed in a line 14 between the film forming chamber 3 and the pump 8, and the raw material is supplied from the injection valve 4. The fixed valve 12 is closed (the valve 13 is also closed) for a certain time after the injection (for example, the time required for the adhesion of self-assembled molecules), and the film formation chamber 3 is kept in a closed system. With this configuration, a monomolecular film is formed with a small amount of liquid raw material, the valve 12 is further bypassed, and a line 15 that is thinner (smaller in cross-sectional area) than the line 14 is further provided. By doing so, the line communicating with the pump 8 by switching between the valve 12 and the valve 13 may be configured to be switchable.
このように構成することで、ポンプ８により成膜室３から吸引排気する流量を変更可能にすることができる。例えば、液体原料を気化充満させた後の所定時間はライン１５を連通させた小流量で吸引を行うとともに、その時間経過後には、ライン１４を連通させ大流量で排気し、残留原料ガス雰囲気を迅速に除去するようにしてもよい。 With this configuration, it is possible to change the flow rate of suction and exhaust from the film forming chamber 3 by the pump 8. For example, for a predetermined time after the liquid material is vaporized and filled, suction is performed at a small flow rate through which the line 15 is communicated, and after that time, the line 14 is communicated and exhausted at a large flow rate, and the residual material gas atmosphere is reduced. You may make it remove rapidly.
その他、本発明は、その趣旨を逸脱しない範囲で種々の変形が可能であることは言うまでもない。 In addition, it goes without saying that the present invention can be variously modified without departing from the spirit of the present invention.
本発明によって、例えば、電界効果型トランジスタ（ＦＥＴ）等のゲート部分に単分子膜を形成し、ある特定のイオン種に感度を有する又は不感応なイオン感応性電界効果型トランジスタ（ＩＳＦＥＴ）に応用することが可能である。また大面積の基板上にＳＡＭを形成することも可能となる。 According to the present invention, for example, a monomolecular film is formed on a gate portion of a field effect transistor (FET) or the like, and the application to an ion sensitive field effect transistor (ISFET) having sensitivity to a specific ion species or insensitive. Is possible. It is also possible to form a SAM on a large area substrate.
１・・・単分子膜形成装置
２・・・基板
３・・・成膜室
４・・・噴射弁
DESCRIPTION OF SYMBOLS 1 ... Monomolecular film formation apparatus 2 ... Substrate 3 ... Deposition chamber 4 ... Injection valve
Claims (4)
前記基板を内部に保持する成膜室と、前記液体原料を前記成膜室内に直接噴射する噴射弁を備えていることを特徴とする単分子膜形成装置。 An apparatus for vaporizing a liquid material containing self-assembled molecules and forming a self-assembled monolayer on a substrate,
A monomolecular film forming apparatus, comprising: a film forming chamber for holding the substrate therein; and an injection valve for directly injecting the liquid material into the film forming chamber.
前記成膜室内を減圧し、前記成膜室内に前記液体原料を噴射して、前記成膜室内を所定濃度の前記液体原料雰囲気で満たした後、前記成膜室内にパージ用ガスを導入し前記液体原料雰囲気を除去することを特徴とする単分子膜形成方法。 A method for forming a self-assembled monolayer on a substrate using the monolayer forming apparatus according to claim 1,
The film formation chamber is depressurized, the liquid source is injected into the film formation chamber, and the film formation chamber is filled with the liquid source atmosphere having a predetermined concentration, and then a purge gas is introduced into the film formation chamber, A method for forming a monomolecular film, comprising removing a liquid source atmosphere.
前記成膜室内に前記液体原料を噴射して、前記成膜室内を所定濃度の前記液体原料雰囲気で満たした後、前記成膜室内を前記ポンプで吸引して前記液体原料雰囲気を除去することを特徴とする単分子膜形成方法。
A method for forming a self-assembled monolayer on a substrate using the monolayer forming apparatus according to claim 2,
Injecting the liquid source into the film forming chamber and filling the film forming chamber with the liquid source atmosphere having a predetermined concentration, and then sucking the film forming chamber with the pump to remove the liquid source atmosphere. A method for forming a monomolecular film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005294037A JP2007100191A (en) | 2005-10-06 | 2005-10-06 | Apparatus and method for forming monolayer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005294037A JP2007100191A (en) | 2005-10-06 | 2005-10-06 | Apparatus and method for forming monolayer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2007100191A true JP2007100191A (en) | 2007-04-19 |
Family
ID=38027411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005294037A Pending JP2007100191A (en) | 2005-10-06 | 2005-10-06 | Apparatus and method for forming monolayer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007100191A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2198069A1 (en) * | 2007-09-13 | 2010-06-23 | Ramot at Tel-Aviv University Ltd. | Vapor deposition of biomolecules |
| JP2011072922A (en) * | 2009-09-30 | 2011-04-14 | National Institute Of Advanced Industrial Science & Technology | Self-assembled film producing method |
| JP2011521431A (en) * | 2008-05-19 | 2011-07-21 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Apparatus and method for vapor phase coating in electronic devices |
| JP2016513885A (en) * | 2013-03-15 | 2016-05-16 | 東京エレクトロン株式会社 | Solvent annealing treatment for guided self-assembly applications |
| WO2017069221A1 (en) * | 2015-10-22 | 2017-04-27 | 東京エレクトロン株式会社 | Film formation apparatus and film formation method |
| US9715172B2 (en) | 2013-10-20 | 2017-07-25 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| US10490402B2 (en) | 2013-09-04 | 2019-11-26 | Tokyo Electron Limited | UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
| WO2021132163A1 (en) * | 2019-12-27 | 2021-07-01 | 東京エレクトロン株式会社 | Film formation method and film formation device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000282240A (en) * | 1999-03-31 | 2000-10-10 | Seiko Epson Corp | Formation of organic monomolecular film and method for patterning the same |
| JP2003502878A (en) * | 1999-06-24 | 2003-01-21 | ナーハ ガジル、プラサード | Atomic layer chemical vapor deposition system |
-
2005
- 2005-10-06 JP JP2005294037A patent/JP2007100191A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000282240A (en) * | 1999-03-31 | 2000-10-10 | Seiko Epson Corp | Formation of organic monomolecular film and method for patterning the same |
| JP2003502878A (en) * | 1999-06-24 | 2003-01-21 | ナーハ ガジル、プラサード | Atomic layer chemical vapor deposition system |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2198069A1 (en) * | 2007-09-13 | 2010-06-23 | Ramot at Tel-Aviv University Ltd. | Vapor deposition of biomolecules |
| JP2011521431A (en) * | 2008-05-19 | 2011-07-21 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Apparatus and method for vapor phase coating in electronic devices |
| JP2011072922A (en) * | 2009-09-30 | 2011-04-14 | National Institute Of Advanced Industrial Science & Technology | Self-assembled film producing method |
| JP2016513885A (en) * | 2013-03-15 | 2016-05-16 | 東京エレクトロン株式会社 | Solvent annealing treatment for guided self-assembly applications |
| US10490402B2 (en) | 2013-09-04 | 2019-11-26 | Tokyo Electron Limited | UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
| US11538684B2 (en) | 2013-09-04 | 2022-12-27 | Tokyo Electron Limited | UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
| US9715172B2 (en) | 2013-10-20 | 2017-07-25 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
| US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
| JPWO2017069221A1 (en) * | 2015-10-22 | 2018-06-21 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
| WO2017069221A1 (en) * | 2015-10-22 | 2017-04-27 | 東京エレクトロン株式会社 | Film formation apparatus and film formation method |
| US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
| WO2021132163A1 (en) * | 2019-12-27 | 2021-07-01 | 東京エレクトロン株式会社 | Film formation method and film formation device |
| JP2021108335A (en) * | 2019-12-27 | 2021-07-29 | 東京エレクトロン株式会社 | Film forming method and film forming device |
| JP7365898B2 (en) | 2019-12-27 | 2023-10-20 | 東京エレクトロン株式会社 | Film-forming method and film-forming equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007100191A (en) | Apparatus and method for forming monolayer | |
| US10900123B2 (en) | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings | |
| JP4422684B2 (en) | Apparatus and method for controlling reactive vapors to produce thin films and coatings | |
| US9194043B2 (en) | Atomic layer deposition apparatus | |
| JP2014531508A5 (en) | ||
| JP6263450B2 (en) | Organic monomolecular film formation method | |
| TWI507559B (en) | Multilayer coating, method for fabricating a multilayer coating, and uses for the same | |
| KR20140144243A (en) | Atomic layer deposition method and apparatuses | |
| KR20140142659A (en) | Organic molecular film forming apparatus and organic molecular film forming method | |
| KR20230117636A (en) | Particle coating by atomic layer depostion | |
| JP6761031B2 (en) | Cleaning method, semiconductor device manufacturing method, substrate processing device and program | |
| KR100994920B1 (en) | Thin film coating apparatus of forming vapor phase self-assembled monolayer | |
| JP2010024484A (en) | Surface treatment apparatus and surface treatment method | |
| US8382071B2 (en) | Raw material supply device | |
| Kaloyeros et al. | Emerging molecular and atomic level techniques for nanoscale applications | |
| KR100697505B1 (en) | Apparatus and method for controlled application of reactive vapors to produce thin films and coatings | |
| JP2009256796A (en) | Apparatus for and method of forming monolayer film | |
| US8598706B2 (en) | Method for forming interlayer dielectric film, interlayer dielectric film, semiconductor device and semiconductor manufacturing apparatus | |
| US20050089695A1 (en) | Silane coated substrate | |
| US20150147487A1 (en) | Method and apparatus for forming organic monolayer | |
| KR100904719B1 (en) | Thin Film Coating Apparatus and method | |
| JP2009256795A (en) | Monolayer film-forming apparatus | |
| KR100397046B1 (en) | Thin film deposition apparatus and the method | |
| KR20050057806A (en) | Method for fabricating self-assembled monolayers in the gas phase | |
| JP3847863B2 (en) | Vacuum apparatus and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071221 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100127 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100202 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100608 |