JP2007096281A5 - - Google Patents

Claims (8)

Forming a crystalline semiconductor film containing an element that promotes crystallization of the semiconductor film over a substrate having an insulating surface;
Forming an oxide film on the crystalline semiconductor film;
Using a plasma processing apparatus that generates plasma having an electron temperature of 0.5 eV or more and 1.5 eV or less and an electron density of 1.0 × 10 ¹¹ cm ⁻³ or more and 1.0 × 10 ¹³ cm ⁻³ or less, An amorphous silicon film containing a rare gas element is formed on the oxide film,
Heating the crystalline semiconductor film, the oxide film and the amorphous silicon film containing the rare gas removes an element that promotes crystallization of the semiconductor film from the crystalline semiconductor film. Manufacturing method. Forming a crystalline semiconductor film containing an element that promotes crystallization of the semiconductor film over a substrate having an insulating surface;
Using a plasma processing apparatus that generates plasma having an electron temperature of 0.5 eV or more and 1.5 eV or less and an electron density of 1.0 × 10 ¹¹ cm ⁻³ or more and 1.0 × 10 ¹³ cm ⁻³ or less, Forming an oxide film on the crystalline semiconductor film;
An amorphous silicon film containing a rare gas element is formed on the oxide film using the plasma processing apparatus,
The crystalline semiconductor film, by heating the amorphous silicon film including the oxide film and the rare gas, wherein a removing an element which promotes crystallization of the semiconductor film from the crystalline semiconductor film Manufacturing method. Oite to claim 2,
When forming the oxide film using the plasma processing apparatus, a mixed gas of oxygen and a rare gas or a mixed gas of oxygen, hydrogen, and a rare gas is used as a source gas. . In claim 2 or claim 3 ,
A method for manufacturing a semiconductor device, wherein the substrate is heated to a temperature of 200 ° C. to 550 ° C. when the oxide film is formed using the plasma processing apparatus. In any one of Claims 1 thru | or 4 ,
When forming an amorphous silicon film containing the rare gas element by using the plasma processing apparatus, a mixed gas of silane and a rare gas as a source gas or disilane and the semiconductor, which comprises using a mixed gas of a rare gas Device fabrication method. In any one of Claims 1 to 5 ,
A method for manufacturing a semiconductor device, wherein the substrate is heated to a temperature of 200 ° C. to 550 ° C. when the amorphous silicon film containing the rare gas element is formed using the plasma processing apparatus. In any one of Claims 1 thru | or 6 ,
The method for manufacturing a semiconductor device is characterized in that the plasma is generated under a pressure of 20 Pa to 133 Pa. In any one of Claims 1 thru | or 7 ,
The element for promoting crystallization is nickel, germanium, iron, palladium, tin, lead, cobalt, platinum, copper, or gold.