JP2007095968A - Stem for semiconductor laser device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stem for a semiconductor laser device that is capable of excellently holding adhesiveness between a semiconductor laser element, and to provide its manufacturing method. <P>SOLUTION: The stem (1) for a semiconductor laser device includes a base (10), and a heat sink (11) provided on the base (10). An inclined face (11c) for connecting at least one side face (11a) of the heat sink (11) with the main face (11b) of the heat sink (11) is formed to the heat sink (11). An angle (θ<SB>1</SB>) formed of the side face (11a) of the heat sink (11) and the inclined face (11c) of the heat sink (11) is over 180° and ≤225°. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a stem for a semiconductor laser device for mounting a semiconductor laser element, and a manufacturing method thereof.

  As a conventional stem for a semiconductor laser device, a stem provided with a heat sink for dissipating heat from a semiconductor laser element on a base is known (for example, see Patent Document 1).

  FIG. 3 is a cross-sectional view of a conventional stem for a semiconductor laser device proposed in Patent Document 1. In FIG. As shown in FIG. 3, the semiconductor laser device stem 100 includes a base 101, a heat sink 102 provided on the base 101, and a plurality of leads 103 inserted through a through hole 101 a penetrating the base 101. When the semiconductor laser device is assembled using the semiconductor laser device stem 100, the semiconductor laser element 104 is mounted on the side surface 102a of the heat sink 102 via an adhesive layer (for example, a solder layer).

FIGS. 4A and 4B are cross-sectional views illustrating the method for manufacturing the semiconductor laser device stem 100 described above. First, as shown in FIG. 4A, a heat sink 102 is bonded onto the base 101 via, for example, a brazing material (not shown). Subsequently, as shown in FIG. 4B, the pair of pressing jigs 105a and 105b are used to press the side surface 102a of the heat sink 102 and the back surface 102b located on the opposite side. As a result, the side surface 102a of the heat sink 102, which is the mounting surface of the semiconductor laser element 104 (see FIG. 3), can be flattened, so that the optical axis shift of the mounted semiconductor laser element 104 can be prevented.
Japanese Unexamined Patent Publication No. 02-174179

  However, when a plurality of the above-described semiconductor laser device stems 100 are simultaneously transported or barrel-processed simultaneously, for example, the semiconductor laser device stems 100 collide with each other, thereby causing the corner portion X ( There is a possibility that a protrusion is formed in the case of FIG. If the protrusion is formed, when the semiconductor laser element 104 is mounted, the adhesion between the side surface 102a and the semiconductor laser element 104 may be reduced. In particular, when mounting the semiconductor laser element 104 that generates a large amount of heat, it is necessary to thin the adhesive layer between the side surface 102a and the semiconductor laser element 104 in order to improve heat dissipation. If the protrusion is formed, it may be difficult to make the adhesive layer thin.

  The present invention solves the above-mentioned conventional problems, and provides a stem for a semiconductor laser device capable of maintaining good adhesion to a semiconductor laser element and a method for manufacturing the same.

The stem for a semiconductor laser device of the present invention is a stem for a semiconductor laser device including a base and a heat sink provided on the base,
In the heat sink, an inclined surface that connects at least one side surface of the heat sink and the main surface of the heat sink is formed,
An angle formed by the side surface of the heat sink and the inclined surface of the heat sink is more than 180 degrees and not more than 225 degrees.

A method for manufacturing a stem for a semiconductor laser device according to the present invention is a method for manufacturing a stem for a semiconductor laser device including a base and a heat sink provided on the base,
A step of pressing at least one side surface of the heat sink by a pressing means,
The pressing means includes a pressing surface for pressing the side surface of the heat sink,
The pressing surface includes a first pressing surface and a second pressing surface connected to the first pressing surface,
The first pressing surface is a surface substantially orthogonal to the pressing direction with respect to the side surface of the heat sink,
The second pressing surface is an inclined surface that is inclined toward the pressing direction side from a connecting portion between the first pressing surface and the second pressing surface,
An angle formed by the first pressing surface and the second pressing surface is 135 degrees or more and less than 180 degrees.

  According to the semiconductor laser device stem of the present invention, since the inclined surface is included, when the semiconductor laser device stems collide with each other, the side surface of the heat sink that becomes the mounting surface of the semiconductor laser element and the inclined surface Protrusions can be prevented from being formed at the corners between them. Thereby, the adhesiveness with a semiconductor laser element can be kept favorable. Moreover, according to the method for manufacturing a stem for a semiconductor laser device of the present invention, the stem for a semiconductor laser device of the present invention can be easily manufactured.

  The stem for a semiconductor laser device of the present invention includes a base and a heat sink provided on the base. The material which comprises a base is not specifically limited, For example, iron, an iron-nickel alloy, etc. can be used. Moreover, it does not specifically limit about the material which comprises a heat sink, as long as it has heat dissipation, For example, copper, aluminum, etc. can be used. The base and the heat sink may be bonded using a brazing material or the like, or may be integrally formed from the same material.

  The heat sink has an inclined surface that connects at least one side surface of the heat sink and the main surface of the heat sink. The angle formed between the side surface and the inclined surface is more than 180 degrees and not more than 225 degrees. As a result, when the stems for a semiconductor laser device of the present invention collide with each other, it is possible to prevent protrusions from being formed at the corners between the side surface serving as the mounting surface of the semiconductor laser element and the inclined surface. Adhesion with the semiconductor laser element can be kept good. In addition, when the stems for semiconductor laser devices of the present invention collide with each other, there is a possibility that protrusions are formed at corners between the main surface of the heat sink and the inclined surface. However, the projections formed at the corners between the main surface of the heat sink and the inclined surface hardly interfere with the adhesion between the side surface of the heat sink and the semiconductor laser element. In addition, when the angle formed by the side surface and the inclined surface exceeds 225 degrees, a protrusion may be formed at a corner between the side surface and the inclined surface. May decrease. The “main surface of the heat sink” refers to the surface of the heat sink that can be seen from the front when the heat sink is viewed from the surface side where the heat sink is provided in the base.

  Next, a method for manufacturing a stem for a semiconductor laser device according to the present invention will be described. The method for manufacturing a stem for a semiconductor laser device of the present invention is a preferable method for manufacturing the stem for a semiconductor laser device of the present invention described above. Therefore, the description overlapping with the above description is omitted.

  The method for manufacturing a stem for a semiconductor laser device of the present invention includes a step of pressing at least one side surface of the heat sink by a pressing means. The pressing means includes a pressing surface for pressing the side surface of the heat sink, and the pressing surface includes a first pressing surface and a second pressing surface connected to the first pressing surface.

  The first pressing surface is a surface substantially orthogonal to a pressing direction with respect to the side surface of the heat sink, and the second pressing surface is pressed from a connecting portion between the first pressing surface and the second pressing surface. It is an inclined surface which inclines to the direction side. And the angle which the said 1st press surface and the said 2nd press surface make is 135 degree | times or more and less than 180 degree | times. According to the method for manufacturing a stem for a semiconductor laser device of the present invention, an inclined surface connecting at least one side surface of the heat sink and the main surface of the heat sink can be formed by the pressing step. Therefore, the above-described stem for the semiconductor laser device of the present invention can be easily manufactured. In addition, the said press means should just be comprised from the material whose hardness is higher than the said heat sink, For example, press jigs, such as die | dye, can be used. In particular, when a die made of an ultra-hard material obtained by sintering TiC or the like is used, it is possible to easily press the side surface of the heat sink. Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  First, a stem for a semiconductor laser device according to an embodiment of the present invention will be described. 1A to be referred to is a perspective view of a stem for a semiconductor laser device according to an embodiment of the present invention, and FIG. 1B to be referred to is a cross-sectional view of the stem for a semiconductor laser device according to an embodiment of the present invention.

  As shown in FIGS. 1A and 1B, the semiconductor laser device stem 1 includes a base 10, a heat sink 11 provided on a main surface 10 a of the base 10, and a plurality of leads 12 fixed to the base 10. The lead 12 can be formed of, for example, an iron-nickel alloy or an iron-nickel-cobalt alloy. Further, the lead 12 is inserted through a through hole 10b that penetrates the base 10 as shown in FIG. 1B.

In the heat sink 11, an inclined surface 11 c that connects the side surface 11 a of the heat sink 11 and the main surface 11 b of the heat sink 11 is formed. And angle (theta) ₁ (refer FIG. 1B) which the said side surface 11a and the said inclined surface 11c make is more than 180 degree | times and below 225 degree | times. Thereby, when the semiconductor laser device stems 1 collide with each other, a protrusion is formed at the corner between the side surface 11a serving as a mounting surface of the semiconductor laser element (not shown) and the inclined surface 11c. Since this can be prevented, good adhesion with the semiconductor laser element can be maintained.

Further, in the semiconductor laser device stem 1, a surface 15 (indicated by a broken line in FIG. 1B) including the ridge line 11d between the side surface 11a and the inclined surface 11c and substantially orthogonal to the side surface 11a is used as a reference. Sometimes, the height H ₁ (see FIG. 1B) to the end (ridge line) 11e located on the opposite side to the ridge line 11d on the inclined surface 11c is preferably 50 μm or more. This is because even if a protrusion of about 1 to 20 μm, for example, is formed at the corner between the main surface 11b and the inclined surface 11c, the adhesion with the semiconductor laser element to be mounted can be maintained. In order to reduce the size of the stem 1 for a semiconductor laser device, the H ₁ is preferably 400 μm or less.

Further, in the semiconductor laser device for the stem 1, and the H ₁ and the theta ₁ preferably satisfies the _{180 + arctan (20 / H 1} ) ≦ θ 1 relationship. This is because even if a protrusion of about 1 to 20 μm, for example, is formed at the corner between the main surface 11b and the inclined surface 11c, contact between the semiconductor laser element to be mounted and the protrusion can be prevented.

  The semiconductor laser device stem 1 according to one embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. For example, when a plurality of semiconductor laser elements are mounted on the stem 1 for a semiconductor laser device, an inclined surface is formed between the side surface of the heat sink 11 other than the side surface 11a and the main surface 11b separately from the inclined surface 11c. May be. This is because when the semiconductor laser elements are mounted on the plurality of side surfaces of the heat sink 11, good adhesion to the respective semiconductor laser elements can be maintained.

  Next, a method for manufacturing a stem for a semiconductor laser device according to an embodiment of the present invention will be described. 2A and 2B to be referred to are cross-sectional views for each process for explaining a method for manufacturing a stem for a semiconductor laser device according to an embodiment of the present invention. 2A and 2B, the same components as those in FIGS. 1A and 1B are denoted by the same reference numerals, and the description thereof is omitted.

First, as shown in FIG. 2A, a heat sink 11 is bonded onto the base 10 via, for example, a brazing material (not shown). Subsequently, as shown in FIG. 2B, the pair of pressing jigs 20a and 20b are used to press the side surface 11a of the heat sink 11 and the back surface 11f located on the opposite side. Here, the pressing jig 20a includes a pressing surface 201a for pressing the side surface 11a. The pressing surface 201a includes a first pressing surface 2011a and a second pressing surface connected to the first pressing surface 2011a. 2012a. The first pressing surface 2011a is a surface that is substantially orthogonal to the pressing direction with respect to the side surface 11a (the direction of arrow I in FIG. 2B), and the second pressing surface 2012a is between the first pressing surface 2011a and the second pressing surface 2012a. It is the inclined surface which inclines to the said press direction side from the connection part 202a. The angle θ ₂ (see FIG. 2B) formed by the first pressing surface 2011a and the second pressing surface 2012a is 135 degrees or more and less than 180 degrees. Thereby, the inclined surface 11c which connects the side surface 11a of the heat sink 11 and the main surface 11b of the heat sink 11 can be formed. Further, as described in the background art, the side surface 11a can be flattened. In addition, the pressure conditions at the time of pressing the said side surface 11a with the press jig | tool 20a should just be about 40-70 Mpa, for example.

In the pressing jig 20a, when the surface 16 (shown by a broken line in FIG. 2B) that includes the connecting portion 202a and is substantially orthogonal to the first pressing surface 2011a is used as a reference, the connecting portion on the second pressing surface 2012a. It is preferable that the height H ₂ (see FIG. 2B) to the end 203a on the opposite side to 202a is 50 μm or more. Since the height H ₁ (see FIG. 1B) in the above-described stem 1 for semiconductor laser device can be set to 50 μm or more, the side surface 11a of the heat sink 11 and the semiconductor laser element (not shown) can be formed in the same manner as described above. This is because adhesion can be maintained. By appropriately adjusting the angle θ ₂ , the value of the angle θ ₁ (see FIG. 1B) in the above-described stem 1 for a semiconductor laser device can be adjusted to a desired value.

  In the manufacturing method, the pressing step (FIG. 2B) is performed after the step of providing the heat sink 11 on the base 10 (FIG. 2A). Thereby, the relative position of the side surface 11a with respect to the base 10 can be finely adjusted simultaneously with the formation of the inclined surface 11c.

  The method for manufacturing a stem for a semiconductor laser device according to an embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. For example, in the above embodiment, a pair of pressing jigs 20a and 20b is used. However, when there is a supporting means for supporting the semiconductor laser device stem 1 during the pressing process, only the pressing jig 20a is used as the pressing means. May be.

  INDUSTRIAL APPLICABILITY The present invention is useful for a semiconductor laser device stem for mounting a semiconductor laser element that emits a large amount of heat, for example, for reproducing information recorded on a CD (Compact Disk), a DVD (Digital Versatile Disk), or the like. The present invention can be applied to a semiconductor laser device incorporated in the optical pickup device.

A is a perspective view of a stem for a semiconductor laser device according to an embodiment of the present invention, and B is a cross-sectional view of the stem for a semiconductor laser device according to an embodiment of the present invention. FIGS. 5A and 5B are cross-sectional views for explaining a method for manufacturing a stem for a semiconductor laser device according to an embodiment of the present invention. FIGS. It is sectional drawing of the stem for the conventional semiconductor laser apparatuses. A and B are sectional views according to processes for explaining a conventional method of manufacturing a stem for a semiconductor laser device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Stem 10 for semiconductor laser apparatus Base 10a Main surface 10b Through-hole 11 Heat sink 11a Side surface 11b Main surface 11c Inclined surface 11d Edge line 11e End part 11f Back surface 12 Lead 15, 16 Surface 20a, 20b Pressing jig (pressing means)
201a pressure surface 202a connecting portion 203a end 2011a first pressure surface 2012a second pressure surfaces H ₁ and H ₂ heights θ ₁ and θ ₂ angles

Claims (6)

A stem for a semiconductor laser device including a base and a heat sink provided on the base,
In the heat sink, an inclined surface that connects at least one side surface of the heat sink and the main surface of the heat sink is formed,
The stem for a semiconductor laser device, wherein an angle formed between the side surface of the heat sink and the inclined surface of the heat sink is more than 180 degrees and not more than 225 degrees.   An end portion that includes a ridge line between the side surface of the heat sink and the inclined surface of the heat sink and is located on the opposite side of the ridge line on the inclined surface when a surface substantially orthogonal to the side surface is used as a reference. The stem for a semiconductor laser device according to claim 1, wherein the height of the semiconductor laser device is 50 μm or more.   When the height of the end portion of the inclined surface is H (μm) and the angle between the side surface and the inclined surface is θ (degrees), the relationship of 180 + arctan (20 / H) ≦ θ is satisfied. The stem for a semiconductor laser device according to claim 2. A method for manufacturing a stem for a semiconductor laser device, comprising a base and a heat sink provided on the base,
A step of pressing at least one side surface of the heat sink by a pressing means,
The pressing means includes a pressing surface for pressing the side surface of the heat sink,
The pressing surface includes a first pressing surface and a second pressing surface connected to the first pressing surface,
The first pressing surface is a surface substantially orthogonal to the pressing direction with respect to the side surface of the heat sink,
The second pressing surface is an inclined surface that is inclined toward the pressing direction side from a connecting portion between the first pressing surface and the second pressing surface,
The method for manufacturing a stem for a semiconductor laser device, wherein an angle formed by the first pressing surface and the second pressing surface is 135 degrees or more and less than 180 degrees.   What is the connection portion in the second pressing surface when the surface includes the connecting portion between the first pressing surface and the second pressing surface and is substantially orthogonal to the first pressing surface? The method for manufacturing a stem for a semiconductor laser device according to claim 4, wherein the height to the opposite end is 50 μm or more.   The method of manufacturing a stem for a semiconductor laser device according to claim 4, wherein the pressing step is performed after the heat sink is provided on the base.

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