JP2007095809A5 - - Google Patents
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- Publication number
- JP2007095809A5 JP2007095809A5 JP2005280330A JP2005280330A JP2007095809A5 JP 2007095809 A5 JP2007095809 A5 JP 2007095809A5 JP 2005280330 A JP2005280330 A JP 2005280330A JP 2005280330 A JP2005280330 A JP 2005280330A JP 2007095809 A5 JP2007095809 A5 JP 2007095809A5
- Authority
- JP
- Japan
- Prior art keywords
- optical fiber
- semiconductor light
- light emitting
- source device
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 19
- 239000003365 glass fiber Substances 0.000 claims 17
- 239000004005 microsphere Substances 0.000 claims 7
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 6
- 239000000835 fiber Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052904 quartz Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Claims (7)
上記発光部が、上記光ファイバのコアの他端に対して一体に形成されたコアと同じ材料に蛍光体粒子を混入した透明材料から成る上記コアの直径より大きい直径を備えた微小球から構成されており、
上記微小球が、上記半導体発光素子からの光または、上記半導体発光素子からの光により励起された蛍光を閉じ込めて共振させることを特徴とする、半導体光源装置。 A semiconductor light emitting device, an optical fiber for guiding light from the semiconductor light emitting device incident from one end to the other end, and a light emitting portion containing phosphor particles disposed at the other end of the optical fiber. In the semiconductor light source device,
The light emitting unit is composed of microspheres having a diameter larger than the diameter of the core made of a transparent material in which phosphor particles are mixed in the same material as the core formed integrally with the other end of the core of the optical fiber. Has been
The semiconductor light source device, wherein the microsphere confines and resonates light emitted from the semiconductor light emitting element or fluorescence excited by light from the semiconductor light emitting element.
上記微小球が、上記半導体発光素子からの光または、上記半導体発光素子からの光により励起された蛍光を閉じ込めて共振させることを特徴とする、半導体光源装置用の発光部。 The light emitting part for a semiconductor light source device, wherein the microsphere confines and resonates light emitted from the semiconductor light emitting element or fluorescence excited by light from the semiconductor light emitting element.
上記光ファイバの他端を細線化する第一の工程と、 A first step of thinning the other end of the optical fiber;
上記光ファイバの細線化した他端を適宜の濃度の蛍光体溶液に浸漬させる第二の工程と、 A second step of immersing the thinned other end of the optical fiber in a phosphor solution of an appropriate concentration;
上記光ファイバの他端に、光ファイバのコアと同じ材料に上記第二の工程によって蛍光体粒子を混入した透明材料から成り且つ上記コアの直径より大きい直径を備えている微小球を一体に形成して発光部とする第三の工程と、 The other end of the optical fiber is integrally formed with a microsphere made of a transparent material in which phosphor particles are mixed in the same material as the core of the optical fiber and having a diameter larger than the diameter of the core. And the third step to make the light emitting part,
を含んでいることを特徴とする、半導体光源装置の製造方法。A method of manufacturing a semiconductor light source device, comprising:
上記第一の工程にて、光ファイバの他端が熱による引き伸ばしまたは化学的薬品を用いたエッチングにより細線化されることを特徴とする、請求項３または４に記載の半導体光源装置の製造方法。 5. The method of manufacturing a semiconductor light source device according to claim 3, wherein, in the first step, the other end of the optical fiber is thinned by stretching by heat or etching using a chemical agent. .
上記第一の工程にて、光ファイバの他端が熱による引き伸ばしまたは薬液を用いた溶解により細線化されることを特徴とする、請求項３または４に記載の半導体光源装置の製造方法。 5. The method of manufacturing a semiconductor light source device according to claim 3, wherein in the first step, the other end of the optical fiber is thinned by stretching by heat or melting using a chemical solution. 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005280330A JP5189247B2 (en) | 2005-09-27 | 2005-09-27 | Manufacturing method of semiconductor light source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005280330A JP5189247B2 (en) | 2005-09-27 | 2005-09-27 | Manufacturing method of semiconductor light source device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007095809A JP2007095809A (en) | 2007-04-12 |
| JP2007095809A5 true JP2007095809A5 (en) | 2008-10-23 |
| JP5189247B2 JP5189247B2 (en) | 2013-04-24 |
Family
ID=37981175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005280330A Expired - Fee Related JP5189247B2 (en) | 2005-09-27 | 2005-09-27 | Manufacturing method of semiconductor light source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5189247B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5046206B2 (en) * | 2007-08-02 | 2012-10-10 | スタンレー電気株式会社 | Light emitting element |
| US8506478B2 (en) | 2008-06-04 | 2013-08-13 | Fujifilm Corporation | Illumination device for use in endoscope |
| JP2009291347A (en) * | 2008-06-04 | 2009-12-17 | Fujifilm Corp | Light source unit and endoscope system using it |
| JP5216429B2 (en) | 2008-06-13 | 2013-06-19 | 富士フイルム株式会社 | Light source device and endoscope device |
| US10541509B2 (en) * | 2016-01-28 | 2020-01-21 | Sony Corporation | Semiconductor light emitting device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739015U (en) * | 1980-08-15 | 1982-03-02 | ||
| JPS5947834U (en) * | 1982-09-22 | 1984-03-30 | 三菱レイヨン株式会社 | Omnidirectional optical sensor |
| US4829537A (en) * | 1986-12-01 | 1989-05-09 | Spectra-Physics, Inc. | Solid state lasers with spherical resonators |
| JPH06138352A (en) * | 1992-10-29 | 1994-05-20 | Okano Densen Kk | Production of lens for semiconductor laser module |
| JP2003517625A (en) * | 1998-12-07 | 2003-05-27 | カリフォルニア・インスティテュート・オブ・テクノロジー | Resonant type light energy control apparatus and method |
| US6389197B1 (en) * | 1999-02-10 | 2002-05-14 | California Institute Of Technology | Coupling system to a microsphere cavity |
| US6350041B1 (en) * | 1999-12-03 | 2002-02-26 | Cree Lighting Company | High output radial dispersing lamp using a solid state light source |
| KR100355675B1 (en) * | 2000-10-10 | 2002-10-11 | 한국과학기술원 | Evanescent-wave coupled microcavity laser |
| JP3991612B2 (en) * | 2001-04-09 | 2007-10-17 | 日亜化学工業株式会社 | Light emitting element |
| JP2004240361A (en) * | 2003-02-10 | 2004-08-26 | Seiko Epson Corp | Lens integrated optical fiber and method of manufacturing the same, optical module, and optical transfer means |
| US7444045B2 (en) * | 2003-10-14 | 2008-10-28 | 3M Innovative Properties Company | Hybrid sphere-waveguide resonators |
-
2005
- 2005-09-27 JP JP2005280330A patent/JP5189247B2/en not_active Expired - Fee Related
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