JP2007083726A - Protective sheet - Google Patents
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- JP2007083726A JP2007083726A JP2006275698A JP2006275698A JP2007083726A JP 2007083726 A JP2007083726 A JP 2007083726A JP 2006275698 A JP2006275698 A JP 2006275698A JP 2006275698 A JP2006275698 A JP 2006275698A JP 2007083726 A JP2007083726 A JP 2007083726A
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- 230000001681 protective effect Effects 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000002294 plasma sputter deposition Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229920001971 elastomer Polymers 0.000 abstract description 3
- 239000004033 plastic Substances 0.000 abstract description 3
- 229920003023 plastic Polymers 0.000 abstract description 3
- 239000005060 rubber Substances 0.000 abstract description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000831 Steel Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- 239000010959 steel Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 77
- 239000010410 layer Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000001237 Raman spectrum Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000052343 Dares Species 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
Description
本発明は保護膜に関し、さらに詳しくは基材上に形成された、耐摩耗性を有する保護膜に関する。 The present invention relates to a protective film, and more particularly to a protective film formed on a substrate and having abrasion resistance.
従来、基材と保護膜との付着力を改善するために、基材と保護膜との間に中間層を設けることが行われている。たとえば具体的には、
（１）保護膜が付着しやすいような元素を基材表面にイオン注入し、注入層を中間層としてその上に保護膜を堆積させる；
（２）基材および保護膜の双方と付着性のよい第３の材料を中間層として基材上に堆積させ、その上に保護膜を堆積させる。中間層は組成を厚さ方向に連続的または非連続的に複数層に変化させる場合もある、ダイヤモンド様炭素（ＤＬＣ）膜の場合にはＳｉまたはＴｉが用いられることが多い；
（３）基材と保護膜の組成を基材の組成１００％から保護膜の組成１００％に連続的に変化させた中間層を堆積させる、
ことが挙げられる。これらの方法は、基材のひずみの小さい場合に基材と保護膜との付着力を増大させるのに効果がある。しかし、基材が大きい弾性変形や塑性変形を受ける場合には保護膜にひずみが加えられるためにいかに硬度や剛性の大きい膜でも必ず割れが生じ、そこを起点としてアブレッシブ摩耗（破壊した薄膜が摩擦剤となって薄膜を攻撃して摩耗を促進させる）の生ずる問題があった。
Conventionally, in order to improve the adhesion between the base material and the protective film, an intermediate layer is provided between the base material and the protective film. For example,
(1) Ions are implanted into the surface of the substrate so that the protective film easily adheres, and the protective film is deposited thereon using the implanted layer as an intermediate layer;
(2) A third material having good adhesion to both the base material and the protective film is deposited on the base material as an intermediate layer, and a protective film is deposited thereon. In the case of a diamond-like carbon (DLC) film, Si or Ti is often used as the intermediate layer may change its composition continuously or discontinuously in the thickness direction.
(3) depositing an intermediate layer in which the composition of the substrate and the protective film is continuously changed from 100% of the composition of the substrate to 100% of the composition of the protective film;
Can be mentioned. These methods are effective in increasing the adhesion between the base material and the protective film when the base material has a small strain. However, when the base material undergoes large elastic deformation or plastic deformation, strain is applied to the protective film, so that cracks always occur even in films with high hardness and rigidity, and abrasive wear (the fractured thin film is subject to friction) It has a problem that it becomes an agent and attacks the thin film to promote wear).
さらに、ゴム上にＤＬＣ等の硬質膜を一面に堆積することも行われている。これらの硬質膜により、基材の耐摩耗性は大きく改善される。しかし、これらは高硬度・高剛性である脆性材料のため、基材自体が変形して膜に大きなひずみが与えられた場合に簡単に膜が破壊・剥離してしまう難点がある。 Further, a hard film such as DLC is deposited on the entire surface of the rubber. These hard films greatly improve the wear resistance of the substrate. However, since these are brittle materials having high hardness and high rigidity, there is a problem that the film is easily broken or peeled off when the base material itself is deformed and a large strain is applied to the film.
この発明は、上述の課題、すなわち基材に耐摩耗性向上のために硬質膜が堆積されている部材において、基材自体が変形して硬質膜に大きなひずみが加えられても硬質膜が基材から剥離しにくい部材を提供することを目的とする。 The present invention is based on the above-mentioned problem, that is, in a member in which a hard film is deposited on the base material to improve wear resistance. It aims at providing the member which is hard to peel from a material.
本発明の要旨は、基材上に、セグメントに分割して形成された膜を堆積してなるセグメント形態の保護膜にある。 The gist of the present invention resides in a segment-type protective film formed by depositing a film formed by dividing into segments on a substrate.
本発明によれば、基材に耐摩耗性向上のために硬質膜が堆積されている部材において、基材自体が変形して硬質膜に大きなひずみが加えられても硬質膜が基材から剥離しにくい部材が得られる。 According to the present invention, in a member in which a hard film is deposited on the base material for improving wear resistance, the hard film is peeled off from the base material even if the base material itself is deformed and a large strain is applied to the hard film. A member that is difficult to do is obtained.
本発明において用いられる基材としては、特に制限されず、たとえばアルミニウム、マグネシウム、これらの合金、鉄鋼等の金属；プラスチック；ゴム；セラミック；およびこれらの複合材料等が挙げられ、目的により適宜選択しうる。 The base material used in the present invention is not particularly limited, and examples thereof include metals such as aluminum, magnesium, alloys thereof, and steel; plastics; rubbers; ceramics; and composite materials thereof. sell.
本発明においては、このような基材上にセグメントに分割して形成された膜が堆積される。この堆積法としては気相法が好適であり、たとえば直流、交流もしくは高周波等を電源とするプラズマＣＶＤまたはマグネトロンスパッタもしくはイオンビームスパッタ等のスパッタ法が挙げられる。これらの方法により堆積される膜は好適には耐摩耗性を付与しうるものであり、たとえば、ダイヤモンドもしくはダイヤモンド状炭素；Ｔｉ，ＳｉもしくはＣｒ等の窒化物、炭化物等が挙げられる。これらの窒化物としてはＴｉＮ，ＴｉＡｌＮ，ＳｉＮ、ＣｒＮ，ＴｉＡｌＢＮ等、さらに炭化物としてはＴｉＣ，ＳｉＣ等、あるいはこれらを複合化したものであってもよい。ダイヤモンドもしくはダイヤモンド状炭素またはＴｉもしくはＳｉを含む膜が好適に使用される．これらの膜厚は通常１ｎｍ〜２００μｍから選択される。 In the present invention, a film formed by dividing into segments is deposited on such a substrate. As this deposition method, a vapor phase method is suitable, and examples include sputtering methods such as plasma CVD using a direct current, alternating current, or high frequency as a power source, magnetron sputtering, or ion beam sputtering. Films deposited by these methods are preferably capable of imparting wear resistance, and examples thereof include diamond or diamond-like carbon; nitrides such as Ti, Si or Cr, and carbides. These nitrides may be TiN, TiAlN, SiN, CrN, TiAlBN, etc., and the carbides may be TiC, SiC, or a combination of these. A film containing diamond or diamond-like carbon or Ti or Si is preferably used. These film thicknesses are usually selected from 1 nm to 200 μm.
本発明の保護膜においては、これらの膜が、セグメントに分割して堆積してなるセグメント形態にあることを必要とする。セグメントの形状は特に制限されず、三角形、四角形、円形等を適宜選択しうる。このセグメントの大きさは１辺または外径１μｍ〜３ｍｍから選ばれるのが通常である。隣接するセグメントの間隔は通常０．１μｍ〜１ｍｍである。またセグメントの膜厚は上記の通り１ｎｍ〜２００μｍであるのが通常である。本発明の保護膜のヤング率は、通常６０ＧＰａ以上、好ましくは２００ＧＰａ以上である。さらに、本発明においてはこれらのセグメントの間に露出している基材に溝を形成させることにより耐摩耗性を一層向上させることができる。この溝の幅は、上記の隣接するセグメントの間隔０．１μｍ〜１ｍｍの範囲から選択される。この溝の断面形状は任意であり、たとえばＶ字型、Ｕ字型等が選ばれる。 In the protective film of the present invention, these films need to be in a segment form formed by dividing into segments and depositing them. The shape of the segment is not particularly limited, and a triangle, a quadrangle, a circle, or the like can be selected as appropriate. The size of this segment is usually selected from one side or an outer diameter of 1 μm to 3 mm. The interval between adjacent segments is usually 0.1 μm to 1 mm. Moreover, as above-mentioned, it is normal that the film thickness of a segment is 1 nm-200 micrometers. The Young's modulus of the protective film of the present invention is usually 60 GPa or more, preferably 200 GPa or more. Furthermore, in the present invention, the wear resistance can be further improved by forming grooves in the base material exposed between these segments. The width of the groove is selected from the range of the interval between the adjacent segments described above of 0.1 μm to 1 mm. The cross-sectional shape of the groove is arbitrary, and for example, a V shape, a U shape, or the like is selected.
本発明においては、保護膜を基材上に形成させる際に、所定の形態のセグメントを得られるように上記間隔部分に対応する大きさ、形状で基材をマスキングした後に、上記の方法により膜の堆積を行うのが好適である。たとえば、タングステン線等の金網を用いてマスキングすることにより金網の目に相当するセグメントが並んだ格子状のセグメント膜が得られ、金網部分、すなわち線径が隣接するセグメント間の間隔を構成する。 In the present invention, when the protective film is formed on the base material, the base material is masked with a size and a shape corresponding to the spacing portion so as to obtain a segment having a predetermined form, and then the film is formed by the above method. It is preferable to perform the deposition. For example, by performing masking using a wire mesh such as a tungsten wire, a lattice-like segment film in which segments corresponding to the meshes of the wire mesh are arranged is obtained, and the wire mesh portion, that is, the interval between adjacent segments is formed.
さらに、上述の基板における溝はセグメント膜の堆積の前もしくは後に、所定の切れ込みを形成させることにより得られる。 Further, the groove in the substrate described above can be obtained by forming a predetermined cut before or after the deposition of the segment film.
本発明により、基材上に、セグメントに分割して形成された膜を堆積してなるセグメント形態の保護膜は耐摩耗性を要求される耐摩耗性部材として、従来と同様な用途、さらには従来、上述の破壊・剥離のために使用し得なかった用途にも好適に使用しうる。 According to the present invention, a protective film in the form of a segment formed by depositing a film formed by dividing into segments on a substrate is used as a wear-resistant member that requires wear resistance. Conventionally, it can be suitably used for applications that could not be used for the above-described destruction and peeling.
実施例１
ダイヤモンド状炭素膜（ＤＬＣ膜）をアルミニウム基板上に合成した。合成条件は次のとおりである。
Example 1
A diamond-like carbon film (DLC film) was synthesized on an aluminum substrate. The synthesis conditions are as follows.
ＲＦ電源周波数 １３．５６ＭＨｚ
基板バイアス電圧 −６０〜−３５０Ｖ
メタン流量 ５．５ｃｍ3 ／分
圧力 １２Ｐａ
合成時間 １５分
膜厚 約１μｍ
ＤＬＣ合成前に基板をスパッタエッチングした。これは基板上の不純物を取り除くとともに、アルミニウム表面の酸化被膜を取り除くためである。スパッタガスにはＡｒを用い、Ａｒの流量１０ｓｃｃｍ，圧力１１Ｐａ、出力５０Ｗで１０分間処理した。その後ＤＬＣ膜とアルミニウムの密着力を高めるためにＤＬＣ膜とアルミニウムの間に中間層としてＳｉ層をマグネトロンスパッタ法により厚さ約１００〜２００ｎｍ堆積した。
RF power frequency 13.56MHz
Substrate bias voltage -60 to -350V
Methane flow rate of 5.5cm 3 / minute pressure 12Pa
Synthesis time 15 minutes Film thickness approx. 1μm
The substrate was sputter etched before DLC synthesis. This is for removing impurities on the substrate and removing an oxide film on the aluminum surface. Ar was used as the sputtering gas, and treatment was performed at a flow rate of Ar of 10 sccm, a pressure of 11 Pa, and an output of 50 W for 10 minutes. Thereafter, in order to increase the adhesion between the DLC film and aluminum, an Si layer was deposited as an intermediate layer between the DLC film and aluminum by a magnetron sputtering method to a thickness of about 100 to 200 nm.
セグメント構造のＤＬＣは、成膜時にタングステン線の金網をアルミニウム基板（１）上に少し間隔をあけて設置し、格子状にマスキングすることにより、セグメント形状に膜を合成した（図１）。セグメント（２）のサイズは、１ｍｍ×１ｍｍでタングステンの線径にφ０．１ｍｍを使用し、セグメント間隔（３）が０．１ｍｍ程度になるようにした。タングステン線は成膜時には電気的に浮いている状態にした。 In the segment structure DLC, a wire mesh of tungsten wires was placed on the aluminum substrate (1) at a slight interval during film formation, and masked in a lattice shape to synthesize the film in the segment shape (FIG. 1). The size of the segment (2) was 1 mm × 1 mm, φ0.1 mm was used for the wire diameter of tungsten, and the segment interval (3) was set to about 0.1 mm. The tungsten wire was in an electrically floating state during film formation.
合成時の圧力は、いずれも１２Ｐａで合成時間は２０分である。（ａ）Ｓｉの中間層を形成していないもの、（ｂ）Ｓｉを中間層としたＡｌ−Ｓｉ−ＤＬＣ構造のもの、さらに（ｃ）１日間たった後、および（ｄ）は３日間たったＡｌ−Ｓｉ−ＤＬＣのものについて、（（ｂ）では比較のために基板の半分にＷ線のマスキングをし、残り半分はマスキングなしでＤＬＣ膜を合成した。）。（ｂ）と（ｃ）、（ｄ）を比較するとセグメント構造になっていない部分は徐々にＤＬＣ膜が剥離しており（ｄ）では、完全に剥離してしまっているのに対し、セグメント部が剥離せず、残存していた。すなわち、セグメント構造にすることにより、膜の残留応力で膜が無負荷状態で剥離するのを防止できることが示された。 The pressure during synthesis is 12 Pa for all, and the synthesis time is 20 minutes. (A) No Si intermediate layer formed, (b) Al-Si-DLC structure with Si as an intermediate layer, (c) After 1 day, and (d) Al after 3 days -For Si-DLC (in (b), W-line masking was performed on half of the substrate for comparison, and a DLC film was synthesized for the other half without masking). When (b), (c), and (d) are compared, the DLC film is gradually peeled off at the portion that is not in the segment structure, and in (d), it is completely peeled off, whereas the segment portion Did not peel and remained. In other words, it has been shown that the segment structure can prevent the film from being peeled off under no load by the residual stress of the film.
成膜したＤＬＣ膜のラマンスペクトルを図２に示す。成膜時の圧力は１２Ｐａで合成時間は２０分とした。比較のためにセグメントでない単一膜のＤＬＣ膜のラマンスペクトルも示す（図２のｃ）。Ｇピーク（１５００ｃｍ-1付近）がグラファイトピークよりも低周波数側にシフトしていて、ピークが強く、Ｄピーク（１３５０ｃｍ-1付近）も小さいことから、ｓｐ３性の高い膜ができていると考えられる。また、Ｗ線でマスクしたことによりその近傍で膜質が変化しているかをセグメントの中央部（図１のＡ）と端部（図１のＢ）のラマンスペクトルを調べ、Ｗ線なしの膜のラマンスペクトルと比較すると、ほとんど同じスペクトルであることから、マスクを用いても膜質はほとんど変化していないことがわかる。すなわち、本方法によりセグメント形態のＤＬＣを合成した場合もセグメントでない場合と同様の膜が形成できることが明らかになった。 FIG. 2 shows the Raman spectrum of the formed DLC film. The pressure during film formation was 12 Pa and the synthesis time was 20 minutes. For comparison, the Raman spectrum of a single-layer DLC film that is not a segment is also shown (FIG. 2c). Than G peak (1500 cm -1 vicinity) graphite peak has shifted to the low frequency side, the peak is strong, since the smaller D peak (1350 cm around -1) and is able to highly sp 3 film Conceivable. In addition, the Raman spectrum of the central part (A in FIG. 1) and the end part (B in FIG. 1) of the segment is examined to determine whether the film quality has changed in the vicinity due to masking with the W line. Compared with the Raman spectrum, it is almost the same spectrum, so it can be seen that the film quality is hardly changed even when a mask is used. That is, it has been clarified that even when a segmented DLC is synthesized by this method, a film similar to the case where the segment is not a segment can be formed.
合成されたＡｌ−Ｓｉ−ＤＬＣの膜についてセグメント構造とそうでない単一膜のＤＬＣ膜についてボールオンディスク試験を行った。垂直荷重は０．７１Ｎで試験時間は５０００ｓである。その結果、通常の膜が５０００回転程度で膜が剥離してしまったのに対し、セグメント構造の膜では、１２０００回転程度まで耐えることができた。 A ball-on-disk test was performed on the synthesized Al-Si-DLC film and a segmented structure of the Al-Si-DLC film and a single DLC film that was not. The vertical load is 0.71 N and the test time is 5000 s. As a result, the normal film peeled off at about 5000 revolutions, whereas the segment structure film could withstand up to about 12000 revolutions.
この実験の結果から、セグメント構造はＤＬＣ膜のトライボロジー（摩擦摩耗）特性を向上させ剥離を防止するのに有効である。トライボロジー特性が向上したのは、セグメント構造のいくつかの特徴による。一つには、摩耗粉によるアブレッシブ摩耗の抑制である。この技術は実際、砥石などで応用されている。あえて摩耗粉を取り込むことができる隙間を作り、アブレッシブ摩耗を抑える方法である。二つ目として、膜の剥離の進展が抑えられることである。セグメント間で膜が切れていることにより一つのセグメントで膜が剥離してきても隣のセグメントはその影響を受けない点である。これにより剥離の進展を抑え、膜の寿命を長くしている。そして最後に密着力の向上である。前述のとおり、時間経過によりセグメント構造と通常の膜では密着力に明らかに差のあることがわかる。 From the results of this experiment, the segment structure is effective in improving the tribological (frictional wear) characteristics of the DLC film and preventing peeling. The improved tribological properties are due to several features of the segment structure. One is suppression of abrasive wear due to wear powder. This technology is actually applied to grinding wheels. It is a method that dares to create a gap that can take in wear powder and suppress abrasive wear. Second, the progress of film peeling can be suppressed. Since the film is cut between the segments, even if the film peels off in one segment, the adjacent segment is not affected. This suppresses the progress of peeling and extends the life of the film. And finally, the improvement of the adhesion. As described above, it can be seen that there is a clear difference in adhesion between the segment structure and the normal film over time.
密着力の向上がセグメント構造の特徴であり、その主要な理由として基板の変形に伴う膜に与えられる大きなひずみを回避できる点が挙げられる。これはセグメント間で変形を受け持つことができるからであり、それにより膜に加わるせん断応力を減少させる。 The improvement of the adhesion is a feature of the segment structure, and the main reason is that a large strain applied to the film accompanying the deformation of the substrate can be avoided. This is because the deformation can be handled between the segments, thereby reducing the shear stress applied to the membrane.
さらに、ＤＬＣ膜のセグメント間に露出している基材に深さ１ｍｍの切込みを形成させたところ、耐摩耗性はさらに１．５倍程度向上した。これは、切込みを付与することにより膜にかかる応力が減少するためである。切込みの効果は１Ｎ以下の比較的低荷重の場合に大きく、φ６ｍｍの球で垂直荷重が１Ｎ以上の場合には切込みのない方が有効となる。これは切込みを加えたことにより基材自身が変形するためである。 Furthermore, when a 1 mm deep cut was formed in the base material exposed between the segments of the DLC film, the wear resistance was further improved by about 1.5 times. This is because the stress applied to the film is reduced by providing the cut. The effect of incision is large when the load is relatively low at 1N or less, and when the vertical load is 1N or more with a sphere of φ6 mm, it is more effective that there is no incision. This is because the base material itself is deformed by the incision.
本発明によれば、基材に耐摩耗性向上のために硬質膜が堆積されている部材において、基材自体が変形して硬質膜に大きなひずみが加えられても硬質膜が基材から剥離しにくい部材が得られる。 According to the present invention, in a member in which a hard film is deposited on the base material for improving wear resistance, the hard film is peeled off from the base material even if the base material itself is deformed and a large strain is applied to the hard film. A member that is difficult to do is obtained.
１ 基材
２ セグメント
３ 間隔
1
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| WO2009050914A1 (en) | 2007-10-19 | 2009-04-23 | Imott Corporation | Gap base material for reducing fretting wear, and fastening structure using gap base material |
| JP2010070782A (en) * | 2008-09-16 | 2010-04-02 | Toyota Industries Corp | In-liquid plasma film deposition method, coating film formed by the same, and in-liquid plasma film deposition apparatus |
| WO2012117854A1 (en) * | 2011-02-28 | 2012-09-07 | 本田技研工業株式会社 | Slide member |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009050914A1 (en) | 2007-10-19 | 2009-04-23 | Imott Corporation | Gap base material for reducing fretting wear, and fastening structure using gap base material |
| JP2010070782A (en) * | 2008-09-16 | 2010-04-02 | Toyota Industries Corp | In-liquid plasma film deposition method, coating film formed by the same, and in-liquid plasma film deposition apparatus |
| WO2012117854A1 (en) * | 2011-02-28 | 2012-09-07 | 本田技研工業株式会社 | Slide member |
| JP6063376B2 (en) * | 2011-02-28 | 2017-01-18 | 本田技研工業株式会社 | Sliding member |
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