JP2007081203A - Area sensor, image input device, and electrophotographic device and the like in which same is incorporated - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an an area sensor which does not decrease in S/N and is thin and compact although a light emitting element is used not to depend upon external light, and makes it possible to constitute a flexible image input device upon occasion. <P>SOLUTION: The area sensor has light emitting pixels and light receiving pixels arrange din two dimensions. The light emitting pixels formed by stacking light emitting elements and thin film transistors and the light receiving elements formed by stacking photoelectric converting elements and thin film transistors are arranged in a plane. The light emitting elements, photoelectric converting elements, thin film transistors, etc., are formed of organic materials, and a substrate is made of a flexible material, so that the area sensor can be made flexible. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an area sensor, and more particularly to an area sensor in which light receiving pixels and light emitting pixels are two-dimensionally arranged. The present invention relates to an image input apparatus using such an area sensor, and more particularly to an image input apparatus that can be made flexible and thin. The present invention also relates to an electrophotographic apparatus incorporating such an image input apparatus.

  A conventional image input device that reads a document or a photograph irradiates the document with light from a light emitting unit and reads the reflected light by a light receiving unit. Since the light receiving unit is a one-dimensional linear sensor, For reading, it was necessary to mechanically scan a reading head including a light emitting portion and a light receiving portion. For this reason, there are problems that it takes a long time to read and that it is difficult to read a non-planar document having a curved surface.

On the other hand, an area sensor having a two-dimensional planar light receiving portion has been studied so that the light receiving portion need not be scanned for reading.
For example, in Patent Document 1, an active matrix using a planar light-emitting backlight, applying light to an original through openings formed between each element of an area sensor, and returning light using a-Si or the like. It is read by a mold area sensor.
In Patent Document 2, an organic photoelectric conversion element (light receiving part) and an organic EL (light emitting part) are stacked, light from the light emitting part is transmitted through the light receiving element to irradiate the original, and the reflected light is applied to each light receiving element. It is receiving light.
On the other hand, in Non-Patent Document 1, a flexible sheet-type image scanner has been successfully produced by integrating an organic transistor matrix and an organic photosensor. However, outside light is used as light, and light returned from the original through the opening of the sheet is received by the organic light sensor on the sheet and read by the organic transistor.

JP 2004-47618 A JP 2004-260798 A IEICE Technical Report Vol. 104 No. 688 P.I. 19 "Integration of organic transistors and organic photosensors-Application to sheet-type scanners"

In Patent Document 1, since light is irradiated through an opening formed between each element of an area sensor using a backlight, it is difficult to make it thin and difficult to fabricate on a flexible substrate. It is believed that there is.
Further, in Patent Document 2, an organic light receiving element and a light emitting part are stacked, and the original is irradiated with light from the light emitting part through the light receiving element. Therefore, it is considered that the S / N ratio of the light receiving element with respect to the reflected light from the document is low and the sensitivity is low.
In Non-Patent Document 1, a flexible scanner can be manufactured. However, since exposure is performed by external light, stable image reading is difficult.

  Therefore, an object of the present invention is to provide an area sensor that can be used as a thin and compact image input device that does not decrease the S / N ratio while using a light emitting element without relying on outside light, and that is thin and compact. It is to be.

The present inventor makes the photoelectric conversion element and the light emitting element two-dimensionally arranged in an area sensor, so that the S / N ratio is not lowered and the backlight is not necessary. In addition, the inventors have found that it is possible to provide a highly sensitive image input device and have arrived at the present invention. In the present invention, by using an organic semiconductor for a photoelectric conversion element, a light emitting element, and a transistor for driving the photoelectric conversion element, a read head can be manufactured on a flexible substrate, and a curved document can be easily input.
That is, the present invention has been achieved by the following means.

[1]
An area sensor, wherein a light emitting pixel including a light emitting element and a light receiving pixel including a photoelectric conversion element are two-dimensionally arranged.
[2]
An area sensor, wherein a light emitting pixel formed by stacking a light emitting element and a thin film transistor and a light receiving pixel formed by stacking a photoelectric conversion element and a thin film transistor are two-dimensionally arranged.
[3]
An area sensor, wherein a light emitting pixel formed by stacking an organic light emitting element and a thin film transistor and a light receiving pixel formed by stacking an organic photoelectric conversion element and a thin film transistor are two-dimensionally arranged.
[4]
The area sensor according to [2] or [3], wherein an organic semiconductor is used for the thin film transistor.
[5]
The area sensor according to any one of [1] to [4], wherein a light shielding wall is formed between the light emitting element and the photoelectric conversion element.
[6]
Each of the light emitting pixels emits white light, and each of the light receiving pixels is sensitive to any of red light, green light, and blue light, or sensitive to any of yellow light, magenta light, and cyan light. The area sensor according to any one of [1] to [5].
[7]
Each of the light emitting pixels is one of red light emission, green light emission, and blue light emission, or one of yellow light emission, magenta light emission, and cyan light emission, and each of the light receiving pixels is panchromatic. [1] The area sensor according to any one of [6].
[8]
Each of the light emitting pixels emits white light, and each of the light receiving pixels is panchromatic, and on each light receiving pixel, either a red, green, or blue filter, or a yellow, magenta, or cyan filter, The area sensor according to any one of [1] to [7], wherein a color filter is disposed.
[9]
Each of the light emitting pixels emits white light, each of the light receiving pixels is panchromatic, and on each light emitting pixel, either a red, green, or blue filter, or a yellow, magenta, or cyan filter, The area sensor according to any one of [1] to [8], wherein a color filter is disposed.
[10]
The area sensor according to any one of [1] to [9], wherein the columns of the light emitting pixels and the columns of the light receiving pixels are alternately arranged.
[11]
Each of the white light emitting pixels and each of the light receiving pixels sensitive to any of red light, green light, and blue light, or sensitive to any of yellow light, magenta light, and cyan light are in a Bayer array. The area sensor according to any one of [1] to [10].
[12]
Each area pixel is arrange | positioned on a board | substrate, The area sensor in any one of [1]-[11] characterized by the above-mentioned.
[13]
The area sensor according to any one of [1] to [12], wherein a light shielding layer is disposed on the substrate side of each pixel.
[14]
The area sensor according to any one of [1] to [13], wherein the substrate is a flexible substrate.

[15]
The area sensor according to any one of [1] to [14], an exposure control device for performing exposure by causing each of the light emitting pixels to emit light, a reading device for reading a signal from each of the light receiving pixels, and An image input apparatus comprising: control means for controlling.
[16]
[2] to [14], the area control device according to any one of the above, an exposure control device connected to each thin film transistor of each light emitting pixel to emit light from each light emitting element, and each of the light receiving pixels. A light receiving control device connected to each thin film transistor to drive the thin film transistor, a reading device connected to each thin film transistor of the light receiving pixel to read a signal from each photoelectric conversion element, and a control means for controlling them Image input device.
[17]
An electrophotographic apparatus comprising the image input device according to [15] or [16].
[18]
A whiteboard comprising the image input device according to [15] or [16].
[19]
A cellular phone comprising the image input device according to [15] or [16].
[20]
An underlay comprising the image input device according to [15] or [16].
[21]
[15] A memo note comprising the image input device according to [16].

  By providing an area sensor with two-dimensionally arranged light-emitting pixels and light-receiving pixels, the S / N ratio is not reduced, and no backlight is required, providing a thin, compact and highly sensitive image input device. It becomes possible to do. Further, by using an organic semiconductor for a photoelectric conversion element, a light emitting element, and a transistor for driving the photoelectric conversion element, a reading head can be manufactured over a flexible substrate, and a document having a curved surface can be easily input.

Hereinafter, the area sensor of the present invention will be described with reference to the drawings, but the present invention is not limited to this description.
FIG. 1 shows a cross-sectional view of a preferred embodiment of the area sensor of the present invention. FIGS. 2 to 10 show examples of how the light emitting pixels and the light receiving pixels are two-dimensionally arranged in the area sensor of the present invention.

The area sensor of the present invention is characterized in that a light emitting pixel 100 including a light emitting element 110 and a light receiving pixel 200 including a photoelectric conversion element 210 are two-dimensionally arranged.
That is, the light-emitting pixel 100 including the light-emitting element 110 and the light-receiving pixel 200 including the photoelectric conversion element 210 are arranged adjacent to each other, for example, in a planar shape.
In the area sensor of the present invention, the light-emitting pixel 100 including the light-emitting element 110 and the light-receiving pixel 200 including the photoelectric conversion element 210 are two-dimensionally arranged, so that light is emitted from the light-emitting element 110 of the light-emitting pixel 100 of the area sensor. The received light is directly irradiated on the document 0 without passing through the opening or passing through the light receiving unit, and the light reflected and returned from the document 0 is converted into the photoelectric conversion element of the adjacent light receiving pixel 200. Light is received at 210.

  In the area sensor shown in FIG. 1, a light emitting pixel 100 is configured by stacking a light emitting element 110 and a thin film transistor 120, and a light receiving pixel 200 is configured by stacking a photoelectric conversion element 210 and a thin film transistor 220. ing.

The light emitting element 110 may be composed of either an inorganic material or an organic material, but is preferably a light emitting element made of an organic material for a flexible area sensor.
The photoelectric conversion element 210 may also be composed of either an inorganic material or an organic material. However, in order to obtain a flexible area sensor, the photoelectric conversion element 210 is preferably a photoelectric conversion element made of an organic material.

  The thin film transistors 12 and 22 may be made of either an inorganic material or an organic material. However, in order to obtain a flexible area sensor, the thin film transistor made of an organic material is preferable.

  The light emitting element 110 of the light emitting pixel 100 includes, for example, a pixel electrode 11, an electron injection layer, a light emitting layer 13, a hole transport layer, and a common counter electrode 15. In addition, the photoelectric conversion element 210 of the light receiving pixel 200 includes, for example, the pixel electrode 11, the hole blocking layer, the photoelectric conversion layer 14, the electron blocking layer, and the common counter electrode 15. A light shielding wall 12 is formed between the light emitting element 110 and the photoelectric conversion element 210 so that light is not directly applied. It is also possible to reduce the influence (signal mixing) on distant pixels by adjusting the angle of the light shielding wall 12, narrowing, etc.

  An image input device comprising the area sensor of the present invention, an exposure control device for performing exposure by emitting light from the light emitting element of each light emitting pixel, a reading device for reading a signal from each light receiving pixel, and a control means for controlling them. Configure.

In the light emitting pixel 100, the thin film transistor 120 is stacked on the light emitting element 110, and the pixel electrode 11 of the light emitting element 110 is connected to the source electrode 8 of the thin film transistor 120. On the other hand, the gate electrode 6 of the thin film transistor 120 is connected to an exposure control device for performing exposure by causing the light emitting element 110 of each light emitting pixel 100 to emit light.
In the light receiving pixel 200, the thin film transistor 220 is stacked on the photoelectric conversion element 210, and the pixel electrode of the photoelectric conversion element 210 is connected to the drain electrode 9 of the thin film transistor 220. On the other hand, a light receiving control device for driving the thin film transistor 220 is connected to the gate electrode 6 of the thin film transistor 220, and a reading device for reading a signal from each photoelectric conversion element 210 is connected to the source electrode 8 of the thin film transistor 220.
And it has a control means which controls them, and it operates as an image input device.
For example, instead of exposing the entire light emitting pixel 100 to emit light, it is possible to perform control such that each light emitting pixel 100 in the vicinity of the light emitting pixel 100 is sequentially emitted according to the reading order of each light receiving pixel 200 and exposed. By controlling in such a manner, signal mixing can be greatly reduced as compared with the case of emitting light entirely.

  In the area sensor of the present invention, various arrangement methods are possible as a method of arranging each light emitting pixel 100 and each light receiving pixel 200 two-dimensionally. For example, as shown in FIG. 2, the light emitting pixel columns and the light receiving pixel columns may be arranged alternately.

The area sensor of the present invention can be a monochrome sensor that obtains a single color image, or can be a color sensor that obtains a multicolor image of two or more colors.
In the case of a monochrome sensor that obtains a single color image, the light emitting element of the light emitting pixel emits light (hereinafter simply referred to as “light emitting pixel emits light”), and the photoelectric conversion element of the light receiving pixel senses the wavelength of light (hereinafter referred to as “light emitting pixel”). It is simply referred to as “the light-receiving pixel senses.”) An appropriate combination is possible as long as it overlaps the wavelength range of light.
Further, in the case of a two-color sensor for obtaining an image of two colors such as red and black on a white background, for example, each light emitting pixel emits white light, and each light receiving pixel is sensitive to red light, It can be constituted by those arranged alternately with those which are sensitive to the color light. In addition, each light receiving pixel may be pan-color sensitive, and a structure in which a red filter is disposed on each light receiving pixel and a structure in which no red filter is disposed may be alternately arranged.

  On the other hand, in the case of a sensor for obtaining a full-color image, for each light receiving pixel, it is necessary to obtain information that is split into three primary colors such as RGB or CMY. By appropriately combining the light emission method on the light-emitting pixel side and the color light sensitivity on the light-receiving pixel side, it is possible to obtain information on the color light separated into the three primary colors for each set of light-emitting pixels and light-receiving pixels.

For example, by setting the light-emitting pixel side to emit white light and the light-receiving pixel side alternately arranged to be sensitive to the three primary colors of RGB, information on the color light separated into RGB is obtained for each set of RGB light-receiving pixels. It is done.
Specifically, for example, a case is considered where the light emitting pixel columns and the light receiving pixel columns are arranged alternately as shown in FIG.

As shown in FIG. 3, all the light emitting pixels emit white light, and each light receiving pixel is arranged in the order of a red light sensitive light receiving pixel R, a green light sensitive light receiving pixel G, and a blue light sensitive light receiving pixel B. A sensor can be constructed. In this case, white light from adjacent light emitting pixels is reflected from the original and received by each of the light receiving pixels R, G, and B.
To simplify the description of one set of three white light emitting pixels and one light receiving pixel R, G, B, only the light receiving pixel R is sensitive to red light reflected from the red document. Similarly, only G for green light from a green document, and only B for blue light from a blue document are sensitive, and R and G for yellow light from a yellow document are magenta from a magenta document. R and B are perceived for color light, G and B are perceived for cyan light from a cyan original, and all R, G, and B light sensing pixels are perceived for white light from a white original. Further, since no light is returned from the black original, all the light receiving pixels of R, G and B are not sensed. In this way, the area sensor can spectrally sense all color lights.
In the above description, the light receiving pixels are red light sensitive R, green light sensitive G, and blue light sensitive B. However, each light receiving pixel itself is panchromatic sensitive, and red, green, A blue color filter may be arranged. (Fig. 11)
In the drawing, the size of one light emitting pixel and one light receiving pixel are the same, but it is possible to change the size, for example, to design the size of the light emitting pixel smaller than the size of the light receiving pixel. It is.

Further, as shown in FIG. 4, each light emitting pixel emits white light, and each light receiving pixel is arranged in the order of yellow light sensitive light receiving pixel Y, magenta light sensitive light receiving pixel M, cyan light sensitive light receiving pixel C. An area sensor can also be configured.
Also in this case, each light receiving pixel itself is pan-color sensitive, and a color filter of yellow color Y, magenta color Y, and cyan color C may be arranged on each pan-color sensitive light receiving pixel.

Until now, all the light-emitting pixels are white light emission, but each light-emitting pixel can be any of red light emission, green light emission, and blue light emission, and each light-receiving pixel can be configured as panchromatic sensitivity to constitute an area sensor. .
Specifically, for example, as shown in FIG. 5, for each light-emitting pixel, the red light-emitting pixel R, the green light-emitting pixel G, and the blue light-emitting pixel B are arranged in this order. An area sensor can be configured. In this case, each color light from the adjacent light emitting pixels is reflected from the original and received by each panchromatic sensitive light receiving pixel.
In short, one set of each of the light emitting pixels R, G, and B and three sets of the pan-color sensitive light-receiving pixels, the red light from the red light-emitting pixel R is reflected by the red original, the yellow original, and the magenta original. Sensitive to color-sensitive light-receiving pixels. Similarly, the green light from the green light emitting pixel G is reflected by a green original, a yellow original, or a cyan original and is received by a panchromatic sensitive light receiving pixel. Further, the blue light from the blue light emitting pixel B is reflected by a blue original, a magenta original, or a cyan original and is received by a panchromatic sensitive light receiving pixel. Therefore, for example, if the light emission times of the red light emitting pixel R, the green light emitting pixel G, and the blue light emitting pixel B are shifted to emit light, the area sensor can spectrally sense all the color lights.
In the above description, the light emitting pixels are the red light emitting R, the green light emitting G, and the blue light emitting B. However, each light emitting pixel itself emits white light, and the color of red R, green G, and blue B is provided on each white light emitting pixel. It is good also as a structure which has arrange | positioned the filter. (Fig. 12)

Further, as shown in FIG. 6, for each light emitting pixel, the yellow light emitting pixel Y, the magenta light emitting pixel M, and the cyan light emitting pixel C are arranged in this order. A sensor can also be constructed.
In this case as well, each light emitting pixel itself emits white light, and a yellow color Y, magenta color M, and cyan color C color filter may be arranged on each white light emitting pixel.

  As described above, in the area sensor of the present invention, various arrangement methods are possible as the two-dimensional arrangement of the light emitting pixels and the light receiving pixels. So far, as shown in FIG. 2, the arrangement in which the columns of light emitting pixels and the columns of light receiving pixels are alternately arranged has been described. However, other arrangement methods, for example, as shown in FIG. In addition, the light emitting pixels and the light receiving pixels can be arranged alternately in a checkered pattern, and various arrangement methods are possible for the arrangement of the three primary colors.

For example, as shown in FIG. 8, one light emitting pixel and three light receiving pixels may be arranged in a Bayer array.
In FIG. 3, one set of three white light emitting pixels, a red light sensitive light receiving pixel R, a green light sensitive light receiving pixel G, and a blue light sensitive light receiving pixel B is shown, but FIG. 9 shows one white light emitting pixel and a red light sensitive pixel. The light receiving pixel R, the green light sensitive light receiving pixel G, and the blue light sensitive light receiving pixel B are shown as one set in a Bayer array.
FIG. 10 shows a Bayer arrangement in which one white light emitting pixel, one yellow light sensitive light receiving pixel Y, magenta light sensitive light receiving pixel M, and one cyan light sensitive light receiving pixel C are arranged.

Each light emitting pixel 100 and each light receiving pixel 200 are normally disposed on the substrate 3.
As the substrate 3, various materials such as glass, plastic, ceramic, metal, and paper can be used as long as the mechanical strength is sufficient. It can be transparent or opaque.
When the substrate 3 is transparent, such as glass or plastic, it is preferable to provide a light shielding layer 4 on the substrate 3 side of each pixel 1 and 2 in order to block light from the substrate 3 side. The material of the light shielding layer may be any material that can sufficiently block light. In FIG. 1, the light shielding layer 4 is located between the pixels 1 and 2 and the substrate 3, but the light shielding layer 4 may be provided outside the substrate 3.

  Moreover, in the area sensor of this invention, it is preferable that the board | substrate 3 is a flexible substrate. Each pixel 1 and 2 is also made of a flexible material. For example, by using an organic light emitting element, an organic photoelectric conversion element, a thin film transistor using an organic semiconductor, or the like, a flexible area sensor can be obtained. Therefore, it becomes possible to manufacture a flexible reading head and to match the shape of a document having a curved surface, so that it is easy to input a curved document.

  Hereinafter, each member of the area sensor of the present invention will be described in detail.

[Substrate sealing substrate]
The substrate in the present invention is not particularly required to transmit light, but a substrate having high thermal stability during the process and having a low moisture and oxygen permeability as much as possible is preferable. If flexibility is not required, it may be an inorganic material such as zirconia stabilized yttrium (YSZ) or glass, or a metal plate or ceramic plate such as zinc, aluminum, stainless steel, chromium, tin, nickel, iron or nickel copper. . When flexibility is required, polyesters such as polyethylene terephthalate, polybutylene phthalate, polyethylene naphthalate, polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, Organic materials such as polycycloolefin, norbornene resin, and poly (chlorotrifluoroethylene) can be mentioned. An opaque plastic substrate may also be used. Among the above, polycarbonate and the like are preferably used particularly in terms of heat resistance. In the case of an organic material, it is preferable that in addition to heat resistance, it is excellent in dimensional stability, solvent resistance, electrical insulation, and workability. By using the flexible substrate as described above, the weight can be reduced as compared with the case of using a glass, metal, or ceramic substrate, the portability can be improved, and the bending stress can be increased. The thickness of the plastic substrate is suitably 20 μm to 500 μm.

The sealing substrate needs to transmit the light emitted from the light emitting layer or the light reflected by the original and incident on the light receiving layer, and is preferably transparent or translucent, specifically, visible light of 400 nm to 700 nm. In this wavelength region, those having a light transmittance of at least 50% or more, preferably 70% or more, more preferably 90% or more are preferable.
As the sealing substrate, transparency of the visible light region such as glass substrate, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyether sulfone, polyvinyl fluoride, polypropylene, polyethylene, polyacrylate, amorphous polyolefin, fluorine resin, etc. High materials can be used, and a flexible substrate having flexibility obtained by forming these materials into a film may be used.
The shape, structure, size, etc. of the substrate are not particularly limited, and can be appropriately selected according to the use, purpose, etc. of the image input apparatus. Generally, the shape is a plate shape. The structure may be a single layer structure, a laminated structure, a single member, or two or more members.

[Light shielding layer]
When a light-transmitting substrate is used, a light shielding layer is used in order to prevent external light from entering the light receiving pixels. Thus, stable image reading can be performed without being affected by external light. As the light shielding layer, a resin in which a metal such as aluminum, chromium, tin, indium, zinc, magnesium, molybdenum, tungsten, tantalum, nickel, titanium, or an alloy, or an opaque material such as carbon black is dispersed. It may be used. The light shielding layer may have a single layer structure or a multilayer structure.
As a method for forming the light shielding layer, a vapor deposition method such as a vacuum deposition method, an electron beam deposition method, or a sputtering method can be employed in the case of metal, and a spin coating method or a blade coating method can be employed when using a resin. Application methods such as a dip coating method, a roll coating method, and a bar coating method can be used.

[Protective layer]
When a conductive substrate is used or a conductive light shielding layer such as aluminum is used, the first protective layer is necessary as an insulating film. When a flexible plastic substrate such as polycarbonate is used as the substrate, a protective layer with low moisture permeability is required to prevent deterioration of device performance due to moisture and oxygen entering the organic layer and electrodes. .
In addition, a second protective layer is also required to prevent moisture and oxygen from entering from the element side as well as from the substrate side. The second protective layer needs to transmit the light emitted from the light emitting layer or the light reflected from the original and incident on the light receiving layer, and is preferably transparent or translucent, specifically, visible light of 400 nm to 700 nm. In this wavelength region, those having a light transmittance of at least 50% or more, preferably 70% or more, more preferably 90% or more are preferable.

As the material of the protective layer, silicon oxide, silicon nitride, germanium oxide, germanium nitride, aluminum oxide, aluminum nitride, silicon oxynitride, silicon oxycarbide, silicon nitride carbide, silicon oxynitride carbide, germanium oxynitride, germanium oxycarbide, Inorganic substances such as germanium nitride carbide, germanium oxynitride carbide, aluminum oxynitride, aluminum oxide carbide, aluminum nitride carbide, aluminum oxynitride carbide, and mixtures thereof can be used. Further, in order to achieve both barrier properties and flexibility, these multilayer laminated films may be used.
The thickness of the protective layer is not particularly limited, but is preferably about 1 to 1000 μm, and more preferably about 5 to 500 μm.
As a method for forming this protective layer, a vacuum evaporation method, an electron beam evaporation method, a sputtering method, a CVD method, or the like can be used.

[TFT]
A known structure can be used for the thin film transistor necessary for driving and controlling the light emitting pixel and the light receiving pixel, for example, a top gate type, a bottom gate type, or other types may be used. .

[Semiconductor layer]
In the case where a metal plate or a glass plate is used as a substrate without requiring flexibility, an inorganic semiconductor such as silicon such as polycrystalline silicon or amorphous silicon, germanium, or gallium arsenide can be used. When a flexible plastic substrate such as polycarbonate is used as the substrate, organic materials such as various condensed polycyclic aromatic compounds and conjugated compounds that can be formed at low temperature, have flexibility, flexibility, and conductivity. A semiconductor can be used.
Specifically, low molecular organic semiconductors include acene-based compounds represented by pentacene, tetracene, and anthracene, and divalent or metal-free metals such as Cu, Zn, Co, Ni, Pb, Pt, Fe, and Mg as central metals. Phthalocyanines such as phthalocyanines represented by trivalent metals coordinated with halogen atoms such as phthalocyanine, aluminum chlorophthalocyanine, indium chlorophthalocyanine, and gallium chlorophthalocyanine, and other phthalocyanines coordinated with oxygen such as baanadyl phthalocyanine and titanyl phthalocyanine Pigments, indigo, thioindigo pigments, quinacridone pigments, perylene or PTCDA, PTCDI, PTCBI. Perylene pigments such as Me-PTC, fullerenes such as C ₆₀ , C ₇₀ , C ₇₆ , C ₇₈ , and C ₈₄ , dyes such as carbon nanotubes, and merocyanine dyes can be used.
Examples of polymer organic semiconductors include polypyrroles such as polypyrrole and poly (N-substituted pyrrole), polythiophenes such as polythiophene and poly (3-substituted thiophene), polyacetylenes, polyvinylcarbazole, polyphenylene sulfide, and polyvinylene sulfide. These polymers can be used.
The above materials may be used alone, or may be used by being dispersed and mixed in a binder such as a resin.
Further, in order to adjust the conductivity of the organic semiconductor, a dopant such as a donor-type or acceptor-type inorganic material, inorganic compound, or organic compound may be doped.

As a method for forming the semiconductor layer, a dry film formation method or a wet film formation method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching using ultraviolet rays, laser, or the like, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.
When a low molecule is used, a dry film forming method is preferably used, and a vacuum deposition method is particularly preferably used. The vacuum deposition method is basically based on the method of heating compounds such as resistance heating deposition method and electron beam heating deposition method, shape of deposition source such as crucible and boat, degree of vacuum, deposition temperature, base temperature, deposition rate, etc. It is a parameter. In order to make uniform deposition possible, it is preferable to perform deposition by rotating the substrate. The degree of vacuum is preferably higher, and vacuum deposition is performed at 10 ⁻⁴ Torr or less, preferably 10 ⁻⁶ Torr or less, particularly preferably 10 ⁻⁸ Torr or less. It is preferable that all steps during the vapor deposition are performed in a vacuum, and basically the compound is not directly in contact with oxygen and moisture in the outside air. The above-described conditions for vacuum deposition need to be strictly controlled because they affect the crystallinity, amorphousness, density, density, etc. of the organic film. It is preferable to use PI or PID control of the deposition rate using a film thickness monitor such as a quartz crystal resonator or an interferometer. When two or more kinds of compounds are vapor-deposited simultaneously, a co-evaporation method, a flash vapor deposition method, or the like can be preferably used.
In the case of using a polymer, it is preferable to form a film by a wet film forming method that is easy to prepare. When a dry film formation method such as vapor deposition is used, it is difficult to use a polymer because it may be decomposed, and an oligomer thereof can be preferably used instead.
The thickness of the semiconductor layer is preferably 10 nm to 1 μm, more preferably 30 nm to 500 nm, and particularly preferably 50 nm to 200 nm.

[Gate insulation film]
An inorganic oxide or an organic compound having a high relative dielectric constant can be used.
Examples of inorganic oxides include silicon oxide, silicon nitride, germanium oxide, germanium nitride, aluminum oxide, aluminum nitride, silicon oxynitride, silicon oxycarbide, silicon nitride carbide, silicon oxynitride carbide, germanium oxynitride, germanium oxycarbide, and nitride Germanium carbide, germanium oxynitride carbide, aluminum oxynitride, aluminum oxycarbide, aluminum nitride carbide, aluminum oxynitride carbide, and mixtures thereof can be used.
Examples of organic compounds include polyimides, polyamides, polyesters, polyacrylates, photo-curing resins based on radical photopolymerization, photocationic polymerization, or copolymers containing an acrylonitrile component, polyvinylphenol, polyvinyl alcohol, novolac resins, and cyanoethyl. Pullulan or the like can also be used. Further, particles obtained by coating these polymer fine particles with an inorganic oxide can also be used.
As a method for forming the gate insulating layer, a dry film formation method or a wet film formation method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching such as ultraviolet rays or laser, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.
Further, although depending on the structure of the TFT, the gate insulating film can be formed by a method of oxidizing the surface of the gate electrode by O ₂ plasma treatment or anodizing, a method of nitriding using N ₂ plasma, or the like. .
The film thickness of the gate insulating film is preferably 50 nm to 3 μm, more preferably 100 nm to 1 μm.

[Gate electrode, source electrode, drain electrode]
It is not particularly limited as long as it is a conductive material. For example, platinum, gold, silver, nickel, chromium, copper, iron, tin, antimony lead, tantalum, indium, aluminum, zinc, magnesium, alloys of these metals, indium / tin Conductive metal oxides such as oxides, inorganic and organic semiconductors whose conductivity has been improved by doping (silicon single crystal, polysilicon, amorphous silicon, germanium, graphite, polyacetylene, polyparaphenylene, polythiophene, polypyrrole, polyaniline, Polythienylene vinylene, polyparaphenylene vinylene, etc.) and composites of these materials. In particular, the material of the electrode used for the source region and the drain region is preferably a material having low electrical resistance at the contact surface with the semiconductor layer among the above materials.

As a method for forming the gate electrode, a dry film formation method or a wet film formation method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching such as ultraviolet rays or laser, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.
The film thicknesses of the gate electrode, the source electrode, and the drain electrode are preferably 10 nm to 1 μm, more preferably 30 nm to 500 nm, and particularly preferably 50 nm to 200 nm.

[Interlayer insulation film]
For the interlayer insulating film, a material similar to that of the gate insulating film can be used, and an inorganic oxide or an organic compound having a high relative dielectric constant is preferable.
Examples of inorganic oxides include silicon oxide, silicon nitride, germanium oxide, germanium nitride, aluminum oxide, aluminum nitride, silicon oxynitride, silicon oxycarbide, silicon nitride carbide, silicon oxynitride carbide, germanium oxynitride, germanium oxycarbide, and nitride Germanium carbide, germanium oxynitride carbide, aluminum oxynitride, aluminum oxycarbide, aluminum nitride carbide, aluminum oxynitride carbide, and mixtures thereof can be used.
Examples of organic compounds include polyimides, polyamides, polyesters, polyacrylates, photo-curing resins based on radical photopolymerization, photocationic polymerization, or copolymers containing an acrylonitrile component, polyvinylphenol, polyvinyl alcohol, novolac resins, and cyanoethyl. Pullulan or the like can also be used. Further, particles obtained by coating these polymer fine particles with an inorganic oxide can also be used.

As a method for forming the interlayer insulating layer, a dry film forming method or a wet film forming method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching such as ultraviolet rays or laser, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.
The film thickness of the interlayer insulating film is preferably 50 nm to 3 μm, more preferably 100 nm to 1 μm.

(Light-receiving part Light-emitting part pixel electrode Counter electrode)
In the light receiving portion, the pixel electrode may be an anode or a cathode. When the anode is used, holes are taken out from the adjacent hole-transporting photoelectric conversion film or hole-transporting layer or electron blocking layer. When the anode is used as the anode, the adjacent electron-transporting photoelectric conversion layer or electron transport is used. Electrons are extracted from the layer or the hole blocking layer.
Also in the light emitting portion, the pixel electrode may be an anode or a cathode. In the case of an anode, holes are injected into the adjacent hole injection layer, hole transport layer, etc. In the case of a cathode, electrons are injected into the adjacent electron injection layer, electron transport layer, etc. It is.
In the light receiving portion and the light emitting portion, the pixel electrode is preferably made of a highly reflective material in order to increase the light use efficiency. Further, the manufacturing process can be simplified by using the same material for the light receiving portion and the light emitting portion.
The counter electrode is provided with electrodes serving as counter electrodes to the pixel electrodes of the light receiving unit and the light emitting unit. The counter electrode needs to be transparent or semi-transparent in order to increase the light utilization efficiency, and is at least 50% or more, preferably 70% or more, more preferably 90% in the visible light wavelength region of 400 nm to 700 nm. What has the above light transmittance is preferable.

The material of the pixel electrode and the counter electrode is selected in consideration of adhesion between adjacent layers, electron affinity, ionization potential, stability, etc., and is a metal, alloy, metal oxide, electrically conductive compound, or a mixture thereof. It is a material that can be used.
As specific examples of these, the anode material may be a conductive metal oxide such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or a metal such as gold, silver, chromium, nickel, or the like. Mixtures or laminates of metals and conductive metal oxides, inorganic conductive materials such as copper iodide and copper sulfide, organic conductive materials such as polyaniline, polythiophene and polypyrrole, silicon compounds and laminates of these with ITO, etc. Preferably, it is a conductive metal oxide, and ITO and IZO are particularly preferable in terms of productivity, high conductivity, transparency, and the like.
Examples of the cathode material include alkali metals (for example, Li, Na, K, etc.) and their fluorides or oxides, alkaline earth metals (for example, Mg, Ca, etc.) and their fluorides or oxides, gold, silver, lead, Aluminum, sodium-potassium alloy or mixed metal thereof, lithium-aluminum alloy or mixed metal thereof, magnesium-silver alloy or mixed metal thereof, rare earth metal such as indium, ytterbium, etc., preferably a work function of 4 eV The following materials are preferable, and aluminum, silver, gold, or mixed metals thereof are more preferable. The cathode can take not only a single layer structure of the compound and the mixture but also a laminated structure including the compound and the mixture. For example, a laminated structure of aluminum / lithium fluoride and aluminum / lithium oxide can be given. Two or more components can be vapor-deposited simultaneously. Furthermore, a plurality of metals can be vapor deposited at the same time to form an alloy electrode, and a previously prepared alloy may be vapor deposited.

The film thickness of the pixel electrode can be appropriately selected depending on the material, but is usually preferably in the range of 10 nm to 1 μm, more preferably 30 nm to 500 nm, and still more preferably 50 nm to 300 nm.
The thickness of the counter electrode can be appropriately selected depending on the material, but is preferably as thin as possible in order to increase the light transmittance, and is usually preferably in the range of 3 nm to 500 nm, more preferably 5 nm to 300 nm, More preferably, it is 7 nm or more and 100 nm or less.
The sheet resistance of the anode and the cathode is preferably low, and is preferably several hundred Ω / □ or less.

As a method for forming the electrode, a dry film forming method or a wet film forming method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching such as ultraviolet rays or laser, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.
When forming the counter electrode, care must be taken not to damage the organic film directly below. For example, when forming a transparent electrode such as ITO, it is preferable to produce it without plasma. By creating a transparent electrode film free from plasma, the influence of plasma on the substrate can be reduced, and the photoelectric conversion characteristics can be improved. Here, plasma free means that no plasma is generated during the formation of the transparent electrode film, or the distance from the plasma generation source to the substrate is 2 cm or more, preferably 10 cm or more, more preferably 20 cm or more. It means a state in which the plasma that reaches is reduced.
Examples of an apparatus that does not generate plasma during the formation of the transparent electrode film include an electron beam vapor deposition apparatus (EB vapor deposition apparatus) and a pulse laser vapor deposition apparatus. Regarding EB deposition equipment or pulsed laser deposition equipment, “Surveillance of Transparent Conductive Films” supervised by Yutaka Sawada (published by CMC, 1999), “New Development of Transparent Conductive Films II” supervised by Yutaka Sawada (published by CMC, 2002) ), "Transparent conductive film technology" by the Japan Society for the Promotion of Science (Ohm Co., 1999), and the references attached thereto, etc. can be used. For an apparatus that can realize a state in which the distance from the plasma generation source to the substrate is 2 cm or more and the arrival of plasma to the substrate is reduced (hereinafter referred to as a plasma-free film forming apparatus), for example, an opposed target sputtering Equipment, arc plasma deposition, etc. are considered, and these are supervised by Yutaka Sawada “New development of transparent conductive film” (published by CMC, 1999), and supervised by Yutaka Sawada “New development of transparent conductive film II” (published by CMC) 2002), “Transparent conductive film technology” (Ohm Co., 1999) by the Japan Society for the Promotion of Science, and references and the like attached thereto can be used.

[Light receiving part organic layer (organic light receiving layer)]
The organic layer of the light receiving part is placed between the pixel electrode and the counter electrode, and the configuration may be only the photoelectric conversion layer, or the electron blocking layer, hole transport layer, electron transport layer, hole blocking layer, crystallization A prevention layer, a buffer layer, a smoothing layer, or the like may be laminated, or these layers may be mixed. Specific structures (including electrodes) of the light receiving layer include anode / electron blocking layer / photoelectric conversion layer / hole blocking layer / cathode, anode / electron blocking layer / hole transport layer / photoelectric conversion layer / electron transport layer. / Hole blocking layer / cathode, anode / buffer layer / electron blocking layer / photoelectric conversion layer / hole blocking layer / cathode, anode / electron blocking layer / photoelectric conversion layer / hole blocking layer / buffer layer / cathode, anode / Electron blocking layer / crystallization prevention layer / photoelectric conversion layer / hole blocking layer / cathode and the like. A plurality of photoelectric conversion layers, electron blocking layers, hole transport layers, electron transport layers, hole blocking layers, anti-crystallization layers, buffer layers, smoothing layers, and the like may be provided.
Depending on the overall configuration of the device, the photoelectric conversion layer absorbs all of blue light, green light, and red light and photoelectrically converts them, or absorbs two of these lights and photoelectrically converts them, or 1 of them. It is preferable to absorb only one light and perform photoelectric conversion. The blue light absorbing layer can absorb light of at least 400 to 500 nm, and preferably the absorption rate of the peak wavelength in that wavelength region is 50% or more. The green light absorbing layer can absorb light of at least 500 to 600 nm, and preferably the absorption rate of the peak wavelength in that wavelength region is 50% or more. The red light absorbing layer can absorb light of at least 600 to 700 nm, and preferably the absorption rate of the peak wavelength in the wavelength region is 50% or more.

As the photoelectric conversion layer, an n-type semiconductor or a p-type semiconductor can be used as a single layer, but an n-type semiconductor and a p-type semiconductor are preferably used in combination.
The organic p-type semiconductor is a donor organic semiconductor, and is mainly represented by a hole transporting organic compound, and means an organic compound having a property of easily donating electrons. More specifically, an organic compound having a smaller ionization potential when two organic materials are used in contact with each other. Therefore, any organic compound can be used as the donor organic compound as long as it is an electron-donating organic compound. For example, triarylamine compounds, benzidine compounds, pyrazoline compounds, styrylamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, cyanine compounds, merocyanine compounds, oxonol compounds, polyamine compounds, indoles Compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), nitrogen-containing heterocyclic compounds The metal complex etc. which it has as can be used. Not limited to this, as described above, any organic compound having an ionization potential smaller than that of the organic compound used as the n-type (acceptor property) compound may be used as the donor organic semiconductor.
The organic n-type semiconductor is an acceptor organic semiconductor, and is mainly represented by an electron transporting organic compound, and means an organic compound having a property of easily accepting electrons. More specifically, the organic compound having the higher electron affinity when two organic compounds are used in contact with each other. Therefore, as the acceptor organic compound, any organic compound can be used as long as it is an electron-accepting organic compound. For example, condensed aromatic carbocyclic compounds (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives), 5- to 7-membered heterocyclic compounds containing nitrogen atoms, oxygen atoms, and sulfur atoms (E.g. pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazine, cinnoline, isoquinoline, pteridine, acridine, phenazine, phenanthroline, tetrazole, pyrazole, imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, Benzoxazole, benzothiazole, carbazole, purine, triazolopyridazine, triazolopyrimidine, tetrazaindene, o Metal complexes having as ligands, such as sadiazole, imidazopyridine, pyralidine, pyrrolopyridine, thiadiazolopyridine, dibenzazepine, tribenzazepine), polyarylene compounds, fluorene compounds, cyclopentadiene compounds, silyl compounds, and nitrogen-containing heterocyclic compounds. Etc. Note that the present invention is not limited thereto, and as described above, any organic compound having an electron affinity higher than that of the organic compound used as the donor organic compound may be used as the acceptor organic semiconductor.
Organic p-type organic dyes and n-type organic dyes can also be used as organic p-type semiconductors and organic n-type semiconductors, preferably cyanine dyes, styryl dyes, hemicyanine dyes, merocyanine dyes (zero methine merocyanine (simple Merocyanine), trinuclear merocyanine dye, tetranuclear merocyanine dye, rhodacyanine dye, complex cyanine dye, complex merocyanine dye, allopolar dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye, azamethine dye, coumarin dye, Arylidene dye, anthraquinone dye, triphenylmethane dye, azo dye, azomethine dye, spiro compound, metallocene dye, fluorenone dye, fulgide dye, perylene dye, phenazine dye, phenothia Dye, quinone dye, indigo dye, diphenylmethane dye, polyene dye, acridine dye, acridinone dye, diphenylamine dye, quinacridone dye, quinophthalone dye, phenoxazine dye, phthaloperylene dye, porphyrin dye, chlorophyll dye, phthalocyanine dye, metal complex dye, And condensed aromatic carbocyclic dyes (naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene derivatives).

Next, the metal complex compound will be described. The metal complex compound is a metal complex having a ligand having at least one nitrogen atom or oxygen atom or sulfur atom coordinated to the metal, and the metal ion in the metal complex is not particularly limited, but preferably beryllium ion, magnesium Ion, aluminum ion, gallium ion, zinc ion, indium ion, or tin ion, more preferably beryllium ion, aluminum ion, gallium ion, or zinc ion, and still more preferably aluminum ion or zinc ion. As the ligand contained in the metal complex, there are various known ligands. Listed by Yersin's “Photochemistry and Photophysics of Coordination Compounds”, Springer-Verlag, published in 1987, Akio Yamamoto, “Organic Metal Chemistry-Fundamentals and Applications”, published by Yukabosha, 1982, etc. It is done.
The ligand is preferably a nitrogen-containing heterocyclic ligand (preferably having 1 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, particularly preferably 3 to 15 carbon atoms, and a monodentate ligand. Or a bidentate or higher ligand, preferably a bidentate ligand such as a pyridine ligand, a bipyridyl ligand, a quinolinol ligand, a hydroxyphenylazole ligand (hydroxyphenyl) Benzimidazole, hydroxyphenylbenzoxazole ligand, hydroxyphenylimidazole ligand)), alkoxy ligand (preferably 1-30 carbon atoms, more preferably 1-20 carbon atoms, particularly preferably carbon 1-10, for example, methoxy, ethoxy, butoxy, 2-ethylhexyloxy, etc.), aryloxy ligands Preferably it has 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as phenyloxy, 1-naphthyloxy, 2-naphthyloxy, 2,4,6-trimethylphenyl Oxy, 4-biphenyloxy, etc.), heteroaryloxy ligands (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as pyridyl. Oxy, pyrazyloxy, pyrimidyloxy, quinolyloxy, etc.), alkylthio ligands (preferably having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 12 carbon atoms, such as methylthio, Ethylthio, etc.), arylthio ligands (preferably having 6 to 30 carbon atoms, more preferred) Has 6 to 20 carbon atoms, particularly preferably 6 to 12 carbon atoms, such as phenylthio, etc.), a heterocyclic substituted thio ligand (preferably 1 to 30 carbon atoms, more preferably 1 to carbon atoms). 20, particularly preferably 1 to 12 carbon atoms, such as pyridylthio, 2-benzimidazolylthio, 2-benzoxazolylthio, 2-benzthiazolylthio and the like, or siloxy ligand (preferably Has 1 to 30 carbon atoms, more preferably 3 to 25 carbon atoms, particularly preferably 6 to 20 carbon atoms, and examples thereof include a triphenylsiloxy group, a triethoxysiloxy group, and a triisopropylsiloxy group. More preferably a nitrogen-containing heterocyclic ligand, an aryloxy ligand, a heteroaryloxy group, or a siloxy ligand, Preferably, a nitrogen-containing heterocyclic ligand, an aryloxy ligand, or a siloxy ligand is used.

The configuration of the photoelectric conversion layer includes a p-type semiconductor layer and an n-type semiconductor layer, and at least one of the p-type semiconductor and the n-type semiconductor is an organic semiconductor, and between the semiconductor layers, It is preferable to contain a photoelectric conversion film (photosensitive layer) having a bulk heterojunction structure layer containing a p-type semiconductor and an n-type semiconductor as an intermediate layer. In such a case, in the photoelectric conversion film, by incorporating a bulk heterojunction structure in the organic layer, the disadvantage that the carrier diffusion length of the organic layer is short can be compensated, and the photoelectric conversion efficiency can be improved. The bulk heterojunction structure is described in detail in Japanese Patent Application No. 2004-080639.
In addition, as a structure of the photoelectric conversion layer, a photoelectric conversion structure having two or more pn junction layer repeating structures (tandem structures) formed of a p-type semiconductor layer and an n-type semiconductor layer between a pair of electrodes. A case where a conversion film (photosensitive layer) is contained is also preferable, and a case where a thin layer of a conductive material is inserted between the repetitive structures is more preferable. The number of repeating structures (tandem structures) of the pn junction layer may be any number, but is preferably 2 to 50, more preferably 2 to 30, particularly preferably 2 or 10 in order to increase the photoelectric conversion efficiency. It is. Silver or gold is preferable as the conductive material, and silver is most preferable. The tandem structure is described in detail in Japanese Patent Application No. 2004-079930.
In terms of light absorption, the larger the thickness of the organic dye layer is, the more preferable, but considering the ratio that does not contribute to charge separation, the thickness of the organic dye layer in the present invention is preferably 30 nm to 300 nm, more preferably 50 nm or more. It is 250 nm or less, and particularly preferably 80 nm or more and 200 nm or less.

[Electron blocking layer, hole transport layer]
An electron donating organic material can be used for the electron blocking layer and the hole transport layer. The electron blocking layer and the hole transport layer are required to have a high ability to transport holes generated in the photoelectric conversion layer to the anode, and to have a high ability to prevent electron injection from the anode when a reverse bias is applied.
Specifically, in a low molecular material, N, N′-bis (3-methylphenyl)-(1,1′-biphenyl) -4,4′-diamine (TPD) or 4,4′-bis [N Aromatic diamine compounds such as-(naphthyl) -N-phenyl-amino] biphenyl (α-NPD), oxazole, oxadiazole, triazole, imidazole, imidazolone, stilbene derivative, pyrazoline derivative, tetrahydroimidazole, polyarylalkane, butadiene 4,4 ′, 4 ″ -tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA), porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, etc. Porphyrin compounds, triazole derivatives, oxazizazo Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, annealing amine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, silazane derivatives, etc. As the polymer material, polymers such as phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, and derivatives thereof can be used.
The thickness of the electron blocking layer or the hole transport layer is preferably 10 nm to 300 nm, more preferably 30 nm to 250 nm, and particularly preferably 50 nm to 200 nm.

[Hole blocking layer, electron transport layer]
An electron-accepting organic material can be used for the hole blocking layer and the electron transport layer. The hole blocking layer and the electron transport layer are required to have a high ability to transport electrons generated in the photoelectric conversion layer to the cathode, and to have a high ability to prevent hole injection from the cathode when a reverse bias is applied.
As an electron-accepting material, fullerenes such as C60 and C70, carbon nanotubes, derivatives thereof, 1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene (OXD-7) ) And other oxadiazole derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, bathocuproine, bathophenanthroline, and derivatives thereof, triazole compounds, tris (8-hydroxyquinolinato) aluminum complexes, bis (4-methyl-8) -Quinolinato) Aluminum complexes, distyrylarylene derivatives, silole compounds and the like can be used.
The thickness of the hole blocking layer or the electron transport layer is preferably 10 nm to 300 nm, more preferably 30 nm to 250 nm, and particularly preferably 50 nm to 200 nm.

  As a method for forming these organic layers, a dry film forming method or a wet film forming method can be used. Specific examples of the dry film forming method include a vacuum vapor deposition method, a sputtering method, an ion plating method, a physical vapor deposition method such as an MBE method, or a CVD method such as plasma polymerization. As the wet film formation method, a coating method such as a cast method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, or may be performed by physical etching such as ultraviolet rays or laser, or may be performed by vacuum deposition or sputtering with a mask overlapped. Alternatively, a lift-off method, a printing method, or a transfer method may be used.

[Light-emitting part organic layer (organic light-emitting layer)]
The organic layer of the light emitting unit is disposed between the pixel electrode and the counter electrode, and the configuration may be a single layer structure composed of only the light emitting layer, or a hole injection layer, a hole transport layer outside the light emitting layer. Further, it may be a laminated structure having other layers such as an electron injection layer and an electron transport layer as appropriate. Specific configurations (including electrodes) of the organic compound layer 22 include anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / cathode, anode / light emitting layer / electron transport layer / cathode, anode / hole. Examples include transport layer / light emitting layer / electron transport layer / cathode. A plurality of light emitting layers, hole transport layers, hole injection layers, and electron injection layers may be provided.
Depending on the overall configuration of the device, the light emitting layer emits all of blue light, green light and red light (white light), or emits two of these lights, or one of these lights. It is preferable that only light is emitted. The blue light emitting layer can emit light of at least 400 to 500 nm, the green light emitting layer can emit light of at least 500 to 600 nm, and the red light emitting layer can emit light of at least 600 to 700 nm. Need to be able to
The light emitting layer receives holes from the anode or hole injection layer and hole transport layer when an electric field is applied, receives electrons from the cathode or electron injection layer and electron transport layer, and provides a field for recombination of holes and electrons. And a layer having a function of emitting light.

The light emitting layer contains a light emitting material. The light emitting material may be formed of a single compound or a plurality of compounds. Further, the light emitting layer may be a single layer or two or more layers, and each layer may emit light in different emission colors. When there are a plurality of light emitting layers, each light emitting layer may be formed of a single material or a plurality of materials.
Materials for the light-emitting layer include benzoxazole, benzimidazole, benzothiazole, styrylbenzene, polyphenyl, diphenylbutadiene, tetraphenylbutadiene, naphthalimide, coumarin, perylene, perinone, oxadiazole, aldazine, pyralidine, cyclopentadiene, bis Polymers such as styrylanthracene, quinacridone, pyrrolopyridine, thiadiazolopyridine, cyclopentadiene, styrylamine, aromatic dimethylidin compounds, various metal complexes represented by 8-quinolinol metal complexes and rare earth complexes, polythiophene, polyphenylene, polyphenylene vinylene, etc. Compounds, organosilanes, iridium trisphenylpyridine complexes, transition metal complexes represented by platinum porphyrin complexes, and derivatives thereof It can be used the body or the like.
The thickness of the light emitting layer is usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 500 nm.

The material of the hole injection layer and the hole transport layer may be any one having a function of injecting holes from the anode, a function of transporting holes, or a function of blocking electrons injected from the cathode. Good. Specific examples include carbazole, triazole, oxazole, oxadiazole, imidazole, polyarylalkane, pyrazoline, pyrazolone, phenylenediamine, arylamine, amino-substituted chalcone, styrylanthracene, fluorenone, hydrazone, stilbene, silazane, aromatic group Tertiary amine compounds, styrylamine compounds, aromatic dimethylidin compounds, porphyrin compounds, polysilane compounds, poly (N-vinylcarbazole), aniline copolymers, thiophene oligomers, conductive polymer oligomers such as polythiophene, organic Silane, carbon film, etc. can be used.
The film thicknesses of the hole injection layer and the hole transport layer are usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 500 nm. The hole injection layer and the hole transport layer may have a single layer structure composed of one or more of the materials described above, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

The material for the electron injection layer and the electron transport layer may be any material having any one of a function of injecting electrons from the cathode, a function of transporting electrons, and a function of blocking holes injected from the anode. Specific examples include fragrances such as triazole, oxazole, oxadiazole, imidazole, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyrandioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, naphthalene, and perylene. Use of metal complexes of cyclic tetracarboxylic anhydride, phthalocyanine, 8-quinolinol, metal phthalocyanine, metal complexes represented by benzoxazole or benzothiazole as ligands, organosilanes such as silole, etc. it can.
The film thicknesses of the electron injection layer and the electron transport layer are usually preferably in the range of 1 nm to 5 μm, more preferably 5 nm to 1 μm, and still more preferably 10 nm to 500 nm. The electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the above-described materials, or may have a multilayer structure composed of a plurality of layers having the same composition or different compositions.

[Partition]
Among the light emitted from the light emitting layer, there is light that goes directly to the light receiving layer, which lowers the S / N of the light receiving layer. Therefore, a partition is required to block this light. The partition walls are preferably black or opaque.
As a material for the partition, an organic material such as an acrylic resin, an epoxy resin, or a photosensitive polyimide mixed with a black pigment such as carbon black, titanium black, Cu—Fe—Mn oxide, or synthetic iron black may be used. it can.
As a method for forming the partition wall, a wet film formation method can be used. As a specific example, a coating method such as a casting method, a spin coating method, a dipping method, or an LB method can be used. Further, a printing method such as ink jet printing or screen printing, or a transfer method such as thermal transfer or laser transfer may be used. Patterning may be performed by chemical etching such as photolithography, physical etching using ultraviolet rays, laser, or the like, or may be performed by a lift-off method, a printing method, or a transfer method.
The thickness of the partition wall is usually preferably in the range of 10 nm to 5 μm, more preferably 30 nm to 1 μm, and still more preferably 50 nm to 500 nm.

[Adhesive layer]
When the water and oxygen are not sufficiently blocked by the organic layer and the electrode by the second protective layer, it is necessary to perform sealing using an adhesive and a sealing substrate.
Adhesives that seal organic layers including transistors, light-emitting layers, and light-receiving layers are flexible ultraviolet rays such as urethane-based, silicone-based, styrene-based, ester-based, vinyl chloride-based, and epoxy-based resins. A curable or thermosetting resin is used, and is cured after the sealing substrate is attached. In the case of full sealing, since the organic layer can be damaged by ultraviolet rays, a thermosetting resin is preferable.
The adhesive layer needs to transmit the light emitted from the light emitting layer or the light reflected from the original and incident on the light receiving layer, and is preferably transparent or translucent. Specifically, the wavelength of visible light is 400 nm to 700 nm. In the region, those having a light transmittance of at least 50% or more, preferably 70% or more, more preferably 90% or more are preferable.
As a method for forming the adhesive layer, a method of printing a sealing resin with a screen printer and a method of drawing the sealing resin with a dispenser can be used.

[Color filter layer]
When a color filter is required for the light-receiving layer and the light-emitting layer, for example, it may be installed on the second protective layer, or one previously installed on the sealing substrate may be bonded.

[Read circuit] (FIGS. 13, 14, and 15)
A light emitting unit for irradiating a document is connected to a data line driving circuit including a shift register, a level shifter, an analog switch, and the like by a data line, and is connected to a scanning line driving circuit having a shift register and a level shifter by a scanning line. In response to the signal from the light emitting unit controller, the pixel is caused to emit light in cooperation with the light receiving unit controller. The light receiving unit is connected to the horizontal address circuit and the vertical address circuit, receives signals from the light receiving unit controller, performs pixel selection and signal readout, and performs analog signal processing, AD conversion, and digital signal processing on the output signal.

[Reading Method] (FIG. 16)
As a driving method of the light emitting pixel, first, when the gate electrode G of the transistor Tr1 is selected and supplied with a voltage through the scanning line, Tr1 generates a current corresponding to the data voltage from the data line supplied to the source electrode S. , Flow from the source electrode S to the drain electrode D. Then, while the gate electrode G of Tr1 is selected, the capacitor C1 is charged, the voltage is supplied to the gate electrode G of the transistor Tr2, and a current based on the gate voltage and the source voltage is supplied to Tr2, The light is emitted from the source electrode S to the light emitting element LED to cause the LED to emit light. Next, when the voltage supply to the gate electrode G of Tr1 is turned off, Tr1 is cut off and the drain electrode D of Tr1 is opened, but Tr2 is the voltage of the gate electrode G by the charge accumulated in the capacitor C1. Is maintained, the driving current is maintained until the next scanning, and the light emission of the LED is maintained.
In the light receiving pixel, it is preferable to apply a voltage to the light receiving layer in order to improve the photoelectric conversion efficiency. The applied voltage may be any voltage, but the necessary voltage varies depending on the film thickness of the photoelectric conversion film. That is, the photoelectric conversion efficiency improves as the electric field applied to the photoelectric conversion film increases, but the applied electric field increases as the film thickness of the photoelectric conversion film decreases even at the same applied voltage. Therefore, when the photoelectric conversion film is thin, the applied voltage may be relatively small. The electric field applied to the photoelectric conversion film is preferably 10 V / m or more, more preferably 1 × 10 ³ V / m or more, further preferably 1 × 10 ⁵ V / m or more, and particularly preferably 1 × 10 ⁶ V / m. m or more, most preferably 1 × 10 ⁷ V / m or more. The upper limit is not particularly since current even in a dark place when the electric field too added flows undesirable, 1 × preferably 10 ¹² V / m or less, preferably more 1 × 10 ⁹ V / m or less.
As a method for driving the light receiving pixels, first, the gate electrode G of the transistor Tr3 is selected via the selection line, and a reverse bias voltage necessary for photoelectric conversion is supplied to the photodiode PD. In this state, light reflected from the document is received to generate a photocurrent in the PD, and the signal is read through the data line, and amplification by an amplifier, analog signal processing, AD conversion, and digital signal processing are performed.

As a specific reading method, first, a document to be read is brought into close contact with the sealing substrate. Next, one light receiving pixel is driven, and a dark signal at the time of non-light emission is read through the data line. Thereafter, one light-emitting pixel adjacent to or in proximity to the driven light-receiving pixel emits light and irradiates the original with light, whereby reflected light corresponding to information on the original is obtained. The reflected light from the original is received by a light receiving pixel that has been driven, and is read out as an electric signal as a bright signal. By making each light emitting part emit light sequentially instead of simultaneously irradiating the entire surface, there is no false signal due to leaked light or multiple reflections entering the light receiving pixels, and the ratio of the bright signal to the dark signal can be increased and fine information can be obtained. it can.
For example, FIG. 13 shows a case where a light emitting pixel and a light receiving pixel are arranged as an example. The light emitting pixel (1) emits red light, the light emitting pixel (2) emits green light, the light emitting pixel (3) emits blue light, and receives light. The pixels (4), (5), (6), (7), and (8) can receive all three colors of red, green, and blue. In the case of this example, the light receiving pixel (4) is first driven to read out the dark signal. Subsequently, the light emitting pixel (1) is driven to emit red light, whereby the original is irradiated with red light. This reflected light is photoelectrically converted by the light receiving pixels and read as a bright signal. When the original absorbs red light, there is no reflected light to the light receiving pixels, and when the original does not absorb red light, strong reflection reaches the light receiving pixels (4). Similarly, the light receiving pixel (5) and the light receiving pixel (6) are driven in response to the light emission of the light emitting pixel (1) to detect red information of the document.
Next, after the light receiving pixel (5) is driven to read out the dark signal, the green light emitting pixel (2) is driven to read out the green information of the document as a bright signal. Similarly, the green signal of the document is detected in order by the light receiving pixel (6) and the light receiving pixel (7).
Next, after the light receiving pixel (6) is driven to read out the dark signal, the blue light emitting pixel element (3) is driven to read out the blue information of the document as a bright signal. Similarly, the blue signal of the document is detected in order by the light receiving pixel (6) and the light receiving pixel (7).
Such detection operation of document information is sequentially performed on all the light receiving pixels, and the obtained signal is processed by an arithmetic circuit, whereby the document information can be read with high definition in full color.
The driving time of the organic transistor, the organic light emitting element, and the organic photoelectric conversion element is sufficiently high, and the document information can be read in a very short time even if the above sequential reading is performed.
Reading may be performed in order from the end, or may be performed in any order from any location. Further, a series of reading operations can be performed by simultaneously emitting light at two or more locations as long as the locations are far enough not to be affected by false signals due to leaked light or multiple reflections entering the light receiving pixels.

〔application〕
The image input device using the area sensor of the present invention can be used as, for example, a scanner for image reading such as a personal computer. It can be incorporated into various devices by taking advantage of its characteristics.
For example, as a normal usage, it can be incorporated into an electrophotographic apparatus or the like as an area sensor scanner for reading a document that does not require mechanical scanning. Further, it can be incorporated into the whiteboard as an area sensor scanner for reading the contents written on the whiteboard as an image as it is. The read data may be printed out immediately, or stored as electronic data for various processing.
Since it can be made thin and compact, it can be incorporated into a mobile phone, for example, and can be used as a small area sensor scanner that is simple even in a dark place.
It can also be incorporated into a thin underlay-like area sensor scanner by taking advantage of its flexible characteristics. For example, a thick original can be used as it is along a curved surface to read the original. it can. Further, by incorporating it in a small portable memo note, it is possible to read the contents written on paper or magnetic paper that can be erased from the contents as it is.

  Hereinafter, an example of manufacturing the area sensor of the present invention will be shown.

[Example] (FIGS. 17 to 19)
A 200 nm Al layer was formed as a light shielding layer (2) on a polycarbonate film substrate (1) having a thickness of 200 μm by sputtering. Subsequently, as the first protective layer (3), 1 μm SiN, 1 μm SiO, and 1 μm SiN were sequentially formed by plasma CVD.
Subsequently, pentacene having a side of about 100 μm and a thickness of 200 nm was formed as the organic semiconductor layer (4) by vacuum evaporation using a mask.
A 200 nm gate insulating film (5) made of a silicon oxide film was formed thereon by plasma CVD while keeping the substrate at a low temperature. A 200 nm chromium film was formed thereon and patterned by photolithography to form a gate electrode (6).
Subsequently, a silicon oxide film having a thickness of 500 nm was formed as the interlayer insulating layer 1 (7), and the gate insulating layer and the interlayer insulating layer were patterned by a photolithography method to form contact holes at positions corresponding to the source electrode and the drain electrode.
Subsequently, a chromium film was formed so as to cover the contact hole, and patterning was performed by a photolithography method to form a source electrode (8) and a drain electrode (9).
A silicon oxide film having a thickness of 500 nm was formed thereon as the interlayer insulating layer 2 (10), and the interlayer insulating layer 2 (10) was patterned by photolithography to form a contact hole at a position corresponding to the pixel electrode.
Subsequently, a 100 nm thick Al film serving as a pixel electrode is formed by sputtering so as to cover this contact hole, a Mo film having a thickness of 50 nm is further formed thereon, and an ITO film having a thickness of 50 nm is further formed thereon by sputtering. They were formed and patterned by photolithography to form pixel electrodes (11).
Subsequently, an acrylic resin in which a black pigment was dispersed was spin-coated as a light-shielding resin film with a thickness of 300 nm. Subsequently, patterning by photolithography was performed to form a light shielding wall (12).
Next, a red light emitting layer, a green light emitting layer, a blue light emitting layer (13), and a light receiving layer (14) were sequentially formed by a mask method. First, TPD (N, N′-bis (3-methylphenyl) -N, N′-diphenylbenzidine) is deposited on the red light emitting layer (13) by about 50 nm, and then the red light emitting material (D) and Alq (Tris) are deposited. (8-hydroxyquinolinato) aluminum) was co-deposited at a deposition rate of 0.004 nm / second and 0.4 nm / second to a film thickness of about 50 nm. Furthermore, about 20 nm of electron transport material (E) was vapor-deposited in order at the substrate temperature of room temperature. Next, as a green light emitting layer (13), TPD was vapor-deposited with a thickness of 50 nm, and Alq doped with 1 mol% of rubrene was vapor-deposited thereon with 50 nm. Next, as a blue light emitting layer (13), α-NPD (N, N′-diphenyl-N, N′-di (α-naphthyl) -benzidine) was vapor-deposited to 40 nm, and the compound F shown below was deposited thereon. (DPVBi) was deposited to 20 nm, and further, Compound E was deposited to 40 nm thereon.
Next, as the light-receiving layer (14), first, m-MTDATA serving as an electron blocking layer is formed to 20 nm, and then copper-phthalocyanine of p-type organic semiconductor is formed to 30 nm, and 3,4,9,10-perylene of n-type organic semiconductor is formed thereon. Tetracarboxyl bisimidazole (PTCBI) was evaporated to 30 nm, and further, Compound E to be a hole blocking layer was evaporated to 20 nm thereon.
On top of them, 7 nm of MgAg (10: 1) was deposited as a common translucent counter electrode (15).
On top of this, 1 μm SiN, 1 μm SiO, and 1 μm SiN were sequentially formed as a second protective layer 16 by plasma CVD. On top of that, an adhesive (17) was applied in order to adhere to the sealing substrate (19). The adhesive is bisphenol A type epoxy resin (“Epicoat 825”, manufactured by Japan Epoxy Resin Co., Ltd.) as an epoxy resin, diethylenetriamine (manufactured by Tokyo Chemical Industry Co., Ltd.) as a curing agent, and γ− as a silane coupling agent. A mixture obtained by stirring and mixing glycidoxypropyltrimethoxysilane ("KBM403", manufactured by Shin-Etsu Chemical Co., Ltd.) was used. Prior to curing, the polycarbonate sealing substrate was laminated, and then the adhesive was cured at 25 ° C. for 20 hours.
A control device was connected to the sheet-like image reading element to form an image input device.

Sectional drawing about suitable embodiment of the area sensor of this invention. An arrangement in which light emitting pixel rows and light receiving pixel rows are arranged alternately. All the light emitting pixels emit white light, and the light receiving pixels are red light sensitive R, green light sensitive G, and blue light sensitive B in this order. All the light emitting pixels emit white light, and the light receiving pixels are yellow light sensitivity Y, magenta light sensitivity M, and cyan light sensitivity C in this order. The light emitting pixels are red light emitting R, green light emitting G, and blue light emitting B in this order, and each light receiving pixel is panchromatic. The light emitting pixels are in the order of yellow light emission Y, magenta light emission M, cyan light emission C, and each light receiving pixel is panchromatic. Arrangement of light-emitting pixels and light-receiving pixels arranged alternately in a checkered pattern. One light emitting pixel and three light receiving pixels are arranged in a Bayer array. One white light emitting pixel and each light receiving pixel of red light sensitivity R, green light sensitivity G, and blue light sensitivity B are arranged in a Bayer array. A white light emitting pixel and yellow light sensitivity Y, magenta light sensitivity M, and cyan light sensitivity C are arranged in a Bayer array. A configuration in which a color filter (RGB or YMC) is arranged on each panchromatic sensitive light-receiving pixel. A configuration in which color filters (RGB or YMC) are arranged on each white light emitting pixel. The apparatus structural example of the area sensor of this invention which has arrange | positioned the light emission pixel and the light reception pixel. The example of a light emission pixel circuit diagram. An example of a light receiving pixel circuit diagram. Explanatory drawing of the example of a reading method. Explanatory drawing of the area sensor preparation example (Example) of this invention. Explanatory drawing of the area sensor preparation example (Example) of this invention (continuation). Explanatory drawing of the area sensor preparation example (Example) of this invention (continuation).

Explanation of symbols

0 Document 1 Substrate 2 Light-shielding layer 3 Protective layer 4 Semiconductor layer 5 Gate insulating film 6 Gate electrode 7 Interlayer insulating layer 1
8 Source electrode 9 Drain electrode 10 Interlayer insulating layer 2
11 pixel electrode 12 light shielding wall 13 light emitting layer 14 photoelectric conversion layer 15 counter transparent electrode 16 protective layer 17 adhesive layer 19 sealing substrate 100 light emitting pixel 110 light emitting element 120 thin film transistor 200 light receiving pixel 210 photoelectric conversion element 220 thin film transistor

Claims (21)

  An area sensor, wherein a light emitting pixel including a light emitting element and a light receiving pixel including a photoelectric conversion element are two-dimensionally arranged.   An area sensor, wherein a light emitting pixel formed by stacking a light emitting element and a thin film transistor and a light receiving pixel formed by stacking a photoelectric conversion element and a thin film transistor are two-dimensionally arranged.   An area sensor, wherein a light emitting pixel formed by stacking an organic light emitting element and a thin film transistor and a light receiving pixel formed by stacking an organic photoelectric conversion element and a thin film transistor are two-dimensionally arranged.   The area sensor according to claim 2, wherein an organic semiconductor is used for the thin film transistor.   The area sensor according to claim 1, wherein a light shielding wall is formed between the light emitting element and the photoelectric conversion element.   Each of the light emitting pixels emits white light, and each of the light receiving pixels is sensitive to any of red light, green light, and blue light, or sensitive to any of yellow light, magenta light, and cyan light. The area sensor according to claim 1.   Each of the light emitting pixels is one of red light emission, green light emission, and blue light emission, or one of yellow light emission, magenta light emission, and cyan light emission, and each of the light receiving pixels is panchromatic. The area sensor according to claim 1.   Each of the light emitting pixels emits white light, and each of the light receiving pixels is panchromatic, and on each light receiving pixel, either a red, green, or blue filter, or a yellow, magenta, or cyan filter, The area sensor according to claim 1, further comprising a color filter.   Each of the light emitting pixels emits white light, each of the light receiving pixels is panchromatic, and on each light emitting pixel, either a red, green, or blue filter, or a yellow, magenta, or cyan filter, The area sensor according to claim 1, further comprising a color filter.   The area sensor according to claim 1, wherein the columns of the light emitting pixels and the columns of the light receiving pixels are alternately arranged.   Each of the white light emitting pixels and each of the light receiving pixels sensitive to any of red light, green light, and blue light, or sensitive to any of yellow light, magenta light, and cyan light are in a Bayer array. The area sensor according to claim 1.   The area sensor according to claim 1, wherein each of the pixels is arranged on a substrate.   The area sensor according to claim 1, wherein a light shielding layer is disposed on the substrate side of each pixel.   The area sensor according to claim 1, wherein the substrate is a flexible substrate.   15. The area sensor according to claim 1, an exposure control device for performing exposure by causing each light emitting pixel to emit light, a reading device for reading a signal from each light receiving pixel, and a control for controlling them. And an image input device.   The area sensor according to any one of claims 2 to 14, an exposure control device connected to each thin film transistor of each light emitting pixel to emit light from each light emitting element, and each thin film transistor of each light receiving pixel An image input device comprising: a light receiving control device that is connected and drives the thin film transistor; a reading device that is connected to each thin film transistor of the light receiving pixel and reads a signal from each photoelectric conversion element; and a control unit that controls them. .   An electrophotographic apparatus incorporating the image input apparatus according to claim 15 or 16.   A whiteboard, wherein the image input device according to claim 15 or 16 is incorporated.   A cellular phone incorporating the image input device according to claim 15 or 16.   An underlay-like area sensor scanner incorporating the image input device according to claim 15 or 16.   A memo note, wherein the image input device according to claim 15 or 16 is incorporated.

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