JP2007080744A - Hole injection layer and organic el (electroluminescent) element using it - Google Patents
Hole injection layer and organic el (electroluminescent) element using it Download PDFInfo
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Abstract
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本発明は、正孔注入層およびそれを用いた有機電界発光(EL)素子に関するものである。 The present invention relates to a hole injection layer and an organic electroluminescence (EL) device using the same.
有機電界発光素子は、陽極と陰極から正孔と電子を注入し、それらが再結合することで有機物の励起状態が形成され、基底状態へ戻る際にエネルギーを光として放出する素子である。しかし、有機物は本来絶縁体であり、正孔や電子を注入するために大きな過電圧を必要とし、発光のエネルギー効率が良くないことなどの問題がある。この問題を改善するには、正孔注入のエネルギー障壁を低下させるため正孔注入材料を素子に新たに付け加える必要がある。従来、電界発光素子の正孔注入層の作製は、低分子量の有機化合物の場合、真空加熱蒸着法が用いられ、また、高分子の場合、スピンコート法やインクジェットプリント法が用いられている。 An organic electroluminescent element is an element that injects holes and electrons from an anode and a cathode, recombines them to form an excited state of an organic substance, and emits energy as light when returning to a ground state. However, organic substances are inherently insulators and require a large overvoltage in order to inject holes and electrons, resulting in problems such as poor energy efficiency of light emission. In order to improve this problem, it is necessary to newly add a hole injection material to the device in order to lower the energy barrier of hole injection. Conventionally, the hole injection layer of the electroluminescent device is produced by a vacuum heating vapor deposition method in the case of a low molecular weight organic compound, and by a spin coating method or an ink jet printing method in the case of a polymer.
しかし上記従来のこれらの成膜法では分子レベルで均一でかつ超薄膜を作製することは不可能であり、膜厚を分子レベルで制御できないため素子の膜厚が厚くなるため、正孔注入層の効果が小さくなってしまうといった問題があった。 However, it is impossible to produce an ultra-thin film that is uniform at the molecular level by these conventional film formation methods, and the film thickness cannot be controlled at the molecular level. There was a problem that the effect of.
本発明は、上記従来の実情に鑑みてなされたものであって、分子レベルで膜厚を制御できる正孔注入層およびそれを用いた有機電界発光素子を提供することを解決すべき課題としている。 The present invention has been made in view of the above-described conventional situation, and it is an object to be solved to provide a hole injection layer capable of controlling a film thickness at a molecular level and an organic electroluminescence device using the same. .
第1発明の正孔注入層は、単層のポリチオフェン誘導体を混合ラングミュアーブロジェット法を用いて分子レベルの超薄膜としたことを特徴とする。また、第2発明の正孔注入層は、第1発明のポリチオフェン誘導体が、ポリ(3-ヘキシルチオフェン)(以下、「PHT」という。)等のポリアルキルチオフェンであることを特徴とする。 The hole injection layer of the first invention is characterized in that a single-layer polythiophene derivative is formed into an ultrathin film at a molecular level by using a mixed Langmuir Blodgett method. The hole injection layer of the second invention is characterized in that the polythiophene derivative of the first invention is polyalkylthiophene such as poly (3-hexylthiophene) (hereinafter referred to as “PHT”).
第3発明の有機電界発光素子は、第1発明、第2発明いずれかの正孔注入層を用いたことを特徴とする。 The organic electroluminescence device of the third invention is characterized by using the hole injection layer of either the first invention or the second invention.
以下、本発明を具体化した実施例1を図面を参照しつつ説明する。 A first embodiment of the present invention will be described below with reference to the drawings.
図1に作製した有機EL素子の構造と用いた化合物のエネルギー準位を示す。正孔注入層の機能としてはITO電極(-4.8 eV)との仕事関数の差が少ないことが要求されるためPHT(-5.2 eV)を選んだ。また、正孔の注入にはITO電極と正孔注入層との界面近傍のみが重要であるため、超薄膜が適している。そのために、これまでの我々の研究からPHTを良好なLB膜形成能を持つN-ドデシルアクリルアミドポリマー(pDDA)と混合することによりPHTの分子レベル超薄膜を作製できる混合LB法を用いて正孔注入層を作製した。また、対照実験としてpDDA LB膜を正孔注入層の代わりに用いた有機EL素子も作製した。正孔注入層以外は代表的な有機EL素子と同じ構造にした。陽極としてITO電極、正孔輸送層としてトリフェニルジアミン誘導体(TPD)、発光層および電子輸送層としてアルミニウムキノリン錯体(Alq3)、陰極としてCaおよび保護膜としてAlの構成であり、正孔注入層以外のすべての層は真空蒸着法により成膜し、有機EL素子の作製を行い、正孔注入層としてPHT超薄膜の導入による有機EL素子の特性評価を行った。
ITO / PHT(0〜5層) / TPD(100nm) / Alq3(100nm) / Ca(100nm) / Al の有機EL素子で得られた印加電圧に対する電流、輝度のデータは真空度や蒸着速度などの成膜条件によりデータにばらつきがでるためデータを平均化することにより決定した。図2にPHT混合LB膜の層数を変えた有機EL素子の印加電圧と輝度の関係を示した。0.1 cd/m2を発光開始電圧と定義するとPHTのない素子では約11Vとなったが、PHTを1層導入した素子では約8Vと3V程度の開始電圧の減少が見られ、5層導入した素子では約7Vとなった。正孔注入層のPHT混合LB膜の代わりにpDDA LB膜を導入した素子では開始電圧が約0.5V上昇したことから、PHT混合LB膜中のPHTが正孔注入層として機能していることが明らかとなった。図3に同一電極内でのPHT1層の有無による輝度の変化を示す。図3を見てもわかるようにPHT1層を導入することにより同一電圧(14V)での発光輝度が明らかに違うことがわかり、PHT1層の導入により正孔注入障壁を軽減できることを明らかにした。また、発光効率(注入電流に対する輝度)はPHT混合LB膜1層の素子において最大となり、5層の素子では逆にPHTのない素子と比べて悪くなることがわかった。この理由はPHT混合LB膜層の増加により正孔注入効率が増加した反面、電子注入効率とのバランスが悪くなったためやPHTが560nmに吸収ピークを持つことによるフィルター効果などが考えられる。
以上のように有機EL素子の正孔注入層としてPHT混合LB膜が有効であることがわかり、またPHT1層の素子において発光効率が改善されることが明らかである。
FIG. 1 shows the structure of the organic EL device fabricated and the energy level of the compound used. As the function of the hole injection layer, PHT (-5.2 eV) was selected because it is required to have a small work function difference from the ITO electrode (-4.8 eV). Also, since only the vicinity of the interface between the ITO electrode and the hole injection layer is important for hole injection, an ultrathin film is suitable. For this purpose, our previous studies show that PHT is mixed with N-dodecylacrylamide polymer (pDDA), which has good LB film-forming ability, and can be used to produce a PHT molecular-level ultrathin film. An injection layer was produced. As a control experiment, an organic EL device using a pDDA LB film instead of the hole injection layer was also fabricated. Except for the hole injection layer, the structure was the same as a typical organic EL device. ITO electrode as anode, triphenyldiamine derivative (TPD) as hole transport layer, aluminum quinoline complex (Alq 3 ) as light emitting layer and electron transport layer, Ca as cathode and Al as protective film, hole injection layer All the layers except those were formed by vacuum evaporation, organic EL devices were fabricated, and characteristics of the organic EL devices were evaluated by introducing a PHT ultrathin film as a hole injection layer.
Current / luminance data for applied voltage obtained from ITO / PHT (0-5 layers) / TPD (100 nm) / Alq 3 (100 nm) / Ca (100 nm) / Al organic EL devices is the degree of vacuum, deposition rate, etc. Since the data varies depending on the film forming conditions, the data was determined by averaging. FIG. 2 shows the relationship between the applied voltage and the luminance of the organic EL element in which the number of layers of the PHT mixed LB film is changed. When 0.1 cd / m 2 is defined as the light emission starting voltage, the device without PHT was about 11V, but the device with one layer of PHT showed a decrease in the starting voltage of about 8V and 3V, and five layers were introduced. The device was about 7V. In the device in which the pDDA LB film is introduced instead of the PHT mixed LB film of the hole injection layer, the starting voltage rises by about 0.5 V, so that the PHT in the PHT mixed LB film functions as the hole injection layer. Became clear. FIG. 3 shows the change in luminance depending on the presence or absence of the PHT1 layer in the same electrode. As can be seen from FIG. 3, it was found that the emission luminance at the same voltage (14V) was clearly different by introducing the PHT1 layer, and that the hole injection barrier could be reduced by introducing the PHT1 layer. In addition, it was found that the luminous efficiency (luminance with respect to the injection current) is maximum in the device with one layer of the PHT mixed LB film, and on the contrary, the device with five layers is worse than the device without PHT. This is because the hole injection efficiency has increased due to the increase in the PHT mixed LB film layer, but the balance with the electron injection efficiency has deteriorated and the filter effect due to the PHT having an absorption peak at 560 nm is considered.
As described above, it is clear that the PHT mixed LB film is effective as the hole injection layer of the organic EL device, and it is clear that the luminous efficiency is improved in the PHT 1 layer device.
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JP2013543654A (en) * | 2010-09-30 | 2013-12-05 | ▲海▼洋王照明科技股▲ふん▼有限公司 | Organic electroluminescent device and method for manufacturing the same |
Citations (3)
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JPH1197175A (en) * | 1997-09-17 | 1999-04-09 | Fuji Photo Film Co Ltd | Organic electroluminescence element material and organic electroluminescence element using the same |
JP2004091503A (en) * | 2002-08-29 | 2004-03-25 | Toa Denka:Kk | Polythiophene derivative thin-film, method for producing the same, electroconductive ultrathin film using the same thin film and method for producing the same |
WO2004062322A1 (en) * | 2002-12-19 | 2004-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing same |
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JPH1197175A (en) * | 1997-09-17 | 1999-04-09 | Fuji Photo Film Co Ltd | Organic electroluminescence element material and organic electroluminescence element using the same |
JP2004091503A (en) * | 2002-08-29 | 2004-03-25 | Toa Denka:Kk | Polythiophene derivative thin-film, method for producing the same, electroconductive ultrathin film using the same thin film and method for producing the same |
WO2004062322A1 (en) * | 2002-12-19 | 2004-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013543654A (en) * | 2010-09-30 | 2013-12-05 | ▲海▼洋王照明科技股▲ふん▼有限公司 | Organic electroluminescent device and method for manufacturing the same |
US9123906B2 (en) | 2010-09-30 | 2015-09-01 | Ocean's King Lighting Science & Technology Co., Ltd. | Organic electroluminescence device and manufacturing method thereof |
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