JP2007078621A5 - - Google Patents

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JP2007078621A5
JP2007078621A5 JP2005270050A JP2005270050A JP2007078621A5 JP 2007078621 A5 JP2007078621 A5 JP 2007078621A5 JP 2005270050 A JP2005270050 A JP 2005270050A JP 2005270050 A JP2005270050 A JP 2005270050A JP 2007078621 A5 JP2007078621 A5 JP 2007078621A5
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specimen
conductor
electromagnetic wave
detecting
coupling
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30GHz〜30THzの周波数領域の内、少なくとも該周波数領域の一部を含む電磁波を用いて対象物である検体に関する情報を取得するための装置であって、
導電体部、前記導電体部の一部または近傍に配置した周期的構造、および前記検体を保持する検体保持部を少なくとも備えており、
前記導電体部に前記電磁波を相互作用させるときに前記検体保持部近傍に表面プラズモン共鳴が発生する条件の前記検体による変化を検出することで前記検体に関する情報を取得する検体情報取得手段を、前記電磁波を発生させて前記導電体部に結合させる結合手段と前記電磁波を前記導電体部に相互作用させた後に検出する検出手段を含んで構成することを特徴とするセンシング装置。
An apparatus for acquiring information about a specimen as a target using an electromagnetic wave including at least a part of the frequency region in a frequency region of 30 GHz to 30 THz,
At least a conductor part, a periodic structure arranged in or near a part of the conductor part, and a specimen holding part for holding the specimen;
Specimen information acquisition means for acquiring information about the specimen by detecting a change caused by the specimen in a condition in which surface plasmon resonance occurs in the vicinity of the specimen holding section when the electromagnetic wave interacts with the conductor section; A sensing apparatus comprising: coupling means for generating an electromagnetic wave and coupling to the conductor part; and detecting means for detecting the electromagnetic wave after interacting with the conductor part.
前記導電体部は、金属あるいはキャリア濃度が制御された半導体であることを特徴とする請求項1記載のセンシング装置。 The sensing device according to claim 1 , wherein the conductor portion is a metal or a semiconductor whose carrier concentration is controlled . 前記検体情報取得手段は、前記導電体部の形成された主面に対して一定の入射角を保って前記電磁波を照射して前記導電体部に結合させる結合手段と、前記導電体部から反射された電磁波を一定の反射角を保って検出する検出手段とを含むことを特徴とする請求項1あるいは2に記載のセンシング装置。 The specimen information acquisition unit includes a coupling unit configured to irradiate the electromagnetic wave while maintaining a certain incident angle with respect to a main surface on which the conductor unit is formed, and to couple to the conductor unit, and to reflect from the conductor unit. sensing apparatus according to claim 1 or 2, characterized in that it comprises a detection means for detected electromagnetic waves while maintaining a constant angle of reflection. 前記検体情報取得手段は、前記導電体部の形成された主面に対して複数の入射角で前記電磁波を照射して前記導電体部に結合させる結合手段と、前記導電体部から反射された電磁波を、入射角に対応して複数の反射角に対して、検出する手段とを含むことを特徴とする請求項1あるいは2に記載のセンシング装置。 The specimen information acquisition means is reflected from the conductor section, a coupling means for irradiating the electromagnetic wave at a plurality of incident angles to the main surface on which the conductor section is formed and coupling to the conductor section. an electromagnetic wave, to a plurality of reflection angle corresponding to the angle of incidence, sensing apparatus according to claim 1 or 2, characterized in that it comprises means for detecting. 前記周期的構造は、回折格子または2次元アレイ状の格子であることを特徴とする請求項1乃至のいずれかに記載のセンシング装置。 Said periodic structure, a sensing device according to any one of claims 1 to 4, characterized in that a diffraction grating or a two-dimensional array of grid. 前記検体保持部近傍に、前記導電体部を含む電磁波を伝播させるための伝送路を備えて、前記結合手段と前記検出手段は、それぞれ、前記伝送路に電磁波を結合する手段と前記伝送路からの電磁波を検出する手段であることを特徴とする請求項1乃至のいずれかに記載のセンシング装置。 A transmission path for propagating electromagnetic waves including the conductor portion is provided in the vicinity of the specimen holding section, and the coupling means and the detection means are respectively connected to the transmission path from the means for coupling electromagnetic waves and the transmission path. sensing device according to any one of claims 1 to 5, characterized in that a means for detecting the electromagnetic wave. 前記検体保持部は、検体の供給を制御できる流路から成ることを特徴とする請求項1乃至のいずれかに記載のセンシング装置。 The sample holding portion, the sensing device according to any one of claims 1 to 6, characterized in that it consists flow path capable of controlling the supply of the specimen. 30GHz〜30THzの周波数領域の内、少なくとも該周波数領域の一部を含む電磁波を用いて対象物である検体に関する情報を取得するためのセンシング方法であって、
その一部または近傍に周期的構造が配置された導電体部の近傍に検体を保持し、前記導電体部に電磁波を結合させて相互作用させ、前記相互作用させた後の電磁波を検出し、この検出に基づいて前記検体が保持された部分の近傍に表面プラズモン共鳴が発生する条件の前記検体による変化を検出して前記検体に関する情報を取得することを特徴とするセンシング方法。
A sensing method for acquiring information about a specimen as an object using an electromagnetic wave including at least a part of the frequency region in a frequency region of 30 GHz to 30 THz,
Holding a specimen in the vicinity of a conductor portion in which a periodic structure is disposed in part or in the vicinity thereof, coupling and interacting with an electromagnetic wave in the conductor portion, and detecting the electromagnetic wave after the interaction, A sensing method characterized in that based on this detection, a change in the condition under which surface plasmon resonance occurs in the vicinity of a portion where the specimen is held is detected to obtain information on the specimen.
前記表面プラズモン共鳴が発生する電磁波の周波数を、前記検体の持つ吸収スペクトルのうちの少なくとも1つの周波数に設定することを特徴とする請求項記載のセンシング方法。 9. The sensing method according to claim 8 , wherein the frequency of the electromagnetic wave generated by the surface plasmon resonance is set to at least one of the absorption spectra of the specimen. 前記表面プラズモン共鳴が発生する条件の前記検体による変化を、電磁波の共鳴周波数の変動として検出、あるいは導電体部の形成された主面に対する電磁波の入射角の共鳴条件の変動として検出することを特徴とする請求項または記載のセンシング方法。 Changes in the conditions under which the surface plasmon resonance occurs due to the specimen are detected as fluctuations in the resonance frequency of electromagnetic waves , or as fluctuations in the resonance conditions of the incident angle of the electromagnetic waves with respect to the main surface on which the conductor portion is formed. The sensing method according to claim 8 or 9 . テラヘルツ波を用いて検体に関する情報を取得するための装置であって、An apparatus for acquiring information about a specimen using terahertz waves,
テラヘルツ波を発生させるための発生手段と、Generating means for generating terahertz waves;
金属あるいはキャリア濃度が制御された半導体から成る導電体部と、A conductor made of a metal or a semiconductor having a controlled carrier concentration; and
前記発生手段が発生したテラヘルツ波を前記導電体部に結合させるための結合手段と、Coupling means for coupling the terahertz wave generated by the generating means to the conductor portion;
前記導電体部に相互作用させたテラヘルツ波を検出するための検出手段と、Detection means for detecting terahertz waves interacted with the conductor portion;
検体を保持するための検体保持部と、A sample holder for holding the sample;
検体に関する情報を取得するための検体情報取得手段と、を備え、A specimen information acquisition means for acquiring information about the specimen,
少なくとも1つの方向に沿って特性値が周期的に変化された構造から成る周期的構造が、前記導電体部の一部または近傍に配置され、A periodic structure composed of a structure whose characteristic values are periodically changed along at least one direction is disposed in a part of or near the conductor portion;
前記検体情報取得手段は、前記導電体部に前記テラヘルツ波を相互作用させるときに前記検体保持部近傍に表面プラズモン共鳴が発生する条件の前記検体による変化を検出することで前記検体に関する情報を取得することを特徴とするセンシング装置。The specimen information acquisition means acquires information on the specimen by detecting a change caused by the specimen in a condition where surface plasmon resonance occurs in the vicinity of the specimen holding section when the terahertz wave interacts with the conductor section. A sensing device characterized by:
テラヘルツ波を発生させるための発生手段と、Generating means for generating terahertz waves;
前記発生手段が発生したテラヘルツ波を伝送するための導電体部を含み構成される伝送路と、A transmission path including a conductor portion for transmitting the terahertz wave generated by the generating means;
前記発生手段が発生したテラヘルツ波を前記導電体部に照射するための結合手段と、Coupling means for irradiating the conductor portion with the terahertz wave generated by the generating means;
前記伝送路を伝送したテラヘルツ波を検出するための検出手段と、を有し、Detecting means for detecting a terahertz wave transmitted through the transmission path,
前記伝送路は、前記導電体部に配置された回折格子を含み構成され、The transmission path is configured to include a diffraction grating disposed in the conductor portion,
前記回折格子の格子ピッチと前記テラヘルツ波を前記伝送路に入射する角度とが、表面プラズモン共鳴を起こす関係になるように構成されることを特徴とする装置。The apparatus is configured such that a grating pitch of the diffraction grating and an angle at which the terahertz wave is incident on the transmission line are in a relationship causing surface plasmon resonance.
前記検出手段が検出したテラヘルツ波から検体に関する情報を取得することを特徴とする請求項12記載の装置。The apparatus according to claim 12, wherein information on the specimen is acquired from the terahertz wave detected by the detection unit.
JP2005270050A 2005-09-16 2005-09-16 Sensing device Expired - Fee Related JP4726212B2 (en)

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