JP2007073793A - Light amount measuring device, exposure system and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light amount measuring device capable of reliably detecting light impinging on a given surface at a relatively large incident angle to precisely measure light amount distribution on the given surface. <P>SOLUTION: The light amount measuring device comprises an optically transparent member (31) disposed on a given surface or in the vicinity thereof, and a light detecting device (32) for detecting the light passing through the optically transparent member. The light detecting side of the optically transparent member is provided with a prism condenser (31b) for condensing the light passing through the optically transparent member through a prismatic action to lead to the light detecting device. The prism condenser has for example an optical surface (31ba) corresponding to a circular conical surface and an optical surface (31bb) in parallel with the given surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light amount measuring apparatus, an exposure apparatus, and a device manufacturing method, and more particularly to measurement of an exposure light amount distribution in an exposure apparatus used when manufacturing a device such as a semiconductor element or a liquid crystal display element in a photolithography process. It is.

  In a photolithography process for manufacturing semiconductor elements, etc., a mask (or reticle) pattern image is projected and exposed on a photosensitive substrate (a wafer coated with a photoresist, a glass plate, etc.) via a projection optical system. An exposure apparatus is used. In the exposure apparatus, as the degree of integration of semiconductor elements and the like is improved, the resolving power (resolution) required for the projection optical system is increasing.

  In order to satisfy the requirement for the resolution of the projection optical system, it is necessary to shorten the wavelength λ of the illumination light (exposure light) and increase the image-side numerical aperture NA of the projection optical system. Specifically, the resolution of the projection optical system is represented by k · λ / NA (k is a process coefficient). The image-side numerical aperture NA is n, where n is the refractive index of the medium (usually a gas such as air) between the projection optical system and the photosensitive substrate, and θ is the maximum incident angle on the photosensitive substrate.・ It is expressed by sinθ.

  In this case, if the maximum incident angle θ is increased to increase the image-side numerical aperture, the incident angle to the photosensitive substrate and the exit angle from the projection optical system increase, and the reflection loss on the optical surface increases. Thus, a large effective image-side numerical aperture cannot be ensured. Therefore, an immersion technique is known in which an image-side numerical aperture is increased by filling a medium such as a liquid having a high refractive index in the optical path between the projection optical system and the photosensitive substrate (for example, Patent Document 1). ).

International Publication No. WO2004 / 019128 Pamphlet

  The exposure system measures the light intensity distribution on the image plane of the projection optical system (and hence the exposure area of the photosensitive substrate) using the light intensity measurement device, and controls it as necessary to project and expose fine patterns with high accuracy. It is necessary to. However, particularly in the case of an exposure apparatus that uses an immersion type projection optical system having a large image-side numerical aperture, it is difficult to detect light that reaches the image plane of the projection optical system at a large incident angle of a predetermined value or more. As a result, it is difficult to measure the light amount distribution on the image plane of the projection optical system with high accuracy.

  The present invention has been made in view of the above-mentioned problems, and is capable of reliably detecting light reaching a predetermined surface at a relatively large incident angle and measuring the light amount distribution on the predetermined surface with high accuracy. An object is to provide an apparatus. The present invention also provides an exposure apparatus capable of projecting and exposing a fine pattern with high accuracy by using, for example, a light amount measurement device that measures the light amount distribution on the image plane of an immersion type projection optical system with high accuracy. The purpose is to do.

In order to solve the above-mentioned problem, in the first embodiment of the present invention, in the light amount measuring device for measuring the light amount on the predetermined surface,
A light transmissive member disposed on or near the predetermined surface;
A photodetector for detecting light through the predetermined surface and the light transmitting member;
A prism condensing part for condensing light through the predetermined surface and the light transmitting member by a prism action and guiding the light to the light detector is provided on the light detector side of the light transmitting member. The light quantity measuring device characterized by the above is provided.

In the second embodiment of the present invention, in an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate via a projection optical system,
There is provided an exposure apparatus comprising a first light quantity measuring device for measuring a light quantity in an exposure region on the photosensitive substrate.

In the third embodiment of the present invention, using the exposure apparatus of the second embodiment, an exposure step of exposing the predetermined pattern to the photosensitive substrate;
And a development step of developing the photosensitive substrate exposed by the exposure step. A device manufacturing method is provided.

  In the light quantity measuring device of the present invention, since the prism condensing part is provided on the light detector side of the light transmitting member, the light passing through the light transmitting member is condensed by the prism action of the prism condensing part to detect light. Led to the vessel. As a result, light that reaches a predetermined surface at a large incident angle that is equal to or greater than a predetermined value is also detected by the photodetector, so that, for example, a light transmitting member having an opening such as a pinhole and the photodetector are moved along the predetermined surface. Thus, the light quantity distribution on the predetermined surface can be measured while moving in a two-dimensional manner.

  As described above, the light quantity measuring device of the present invention can reliably detect the light reaching the predetermined surface at a relatively large incident angle, and can measure the light quantity distribution on the predetermined surface with high accuracy. Further, in the exposure apparatus of the present invention, a fine pattern can be projected and exposed with high precision using, for example, a light quantity measuring apparatus that measures the light quantity distribution on the image plane of an immersion type projection optical system with high precision. As a result, a good device can be manufactured with high accuracy.

  Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the X axis and the Y axis are set in a direction parallel to the wafer W, and the Z axis is set in a direction orthogonal to the wafer W. More specifically, the XY plane is set parallel to the horizontal plane, and the + Z axis is set upward along the vertical direction.

  As shown in FIG. 1, the exposure apparatus of this embodiment includes, for example, an ArF excimer laser light source that is an exposure light source, and includes an illumination optical system 1 that includes an optical integrator (homogenizer), a field stop, a condenser lens, and the like. ing. Exposure light (exposure beam) IL composed of ultraviolet pulsed light having a wavelength of 193 nm emitted from the light source passes through the illumination optical system 1 and illuminates the reticle (mask) R.

  A pattern to be transferred is formed on the reticle R, and a rectangular (slit-like) pattern region having a long side along the X direction and a short side along the Y direction is illuminated in the entire pattern region. Is done. The light that has passed through the reticle R forms a reticle pattern at a predetermined reduction projection magnification in an exposure area on a wafer (photosensitive substrate) W coated with a photoresist via an immersion type projection optical system PL.

  That is, a rectangular still exposure having a long side along the X direction and a short side along the Y direction on the wafer W so as to optically correspond to the rectangular illumination region on the reticle R. A pattern image is formed in the area (effective exposure area). The reticle R is held parallel to the XY plane on the reticle stage RST, and a mechanism for finely moving the reticle R in the X direction, the Y direction, and the rotation direction is incorporated in the reticle stage RST. In reticle stage RST, positions in the X direction, Y direction, and rotational direction are measured and controlled in real time by a reticle laser interferometer (not shown).

  The wafer W is fixed parallel to the XY plane on the Z stage 9 via a wafer holder (not shown). The Z stage 9 is fixed on an XY stage 10 that moves along an XY plane substantially parallel to the image plane of the projection optical system PL, and the focus position (Z direction position) and tilt angle of the wafer W are set. Control. The Z stage 9 is measured and controlled in real time by the wafer laser interferometer 13 using the moving mirror 12 provided on the Z stage 9 in the X direction, the Y direction, and the rotational direction.

  The XY stage 10 is placed on the base 11 and controls the X direction, Y direction, and rotation direction of the wafer W. On the other hand, the main control system 14 provided in the exposure apparatus of the present embodiment adjusts the position of the reticle R in the X direction, the Y direction, and the rotational direction based on the measurement values measured by the reticle laser interferometer. That is, the main control system 14 adjusts the position of the reticle R by transmitting a control signal to a mechanism incorporated in the reticle stage RST and finely moving the reticle stage RST.

  The main control system 14 adjusts the focus position (position in the Z direction) and the tilt angle of the wafer W in order to adjust the surface on the wafer W to the image plane of the projection optical system PL by the auto focus method and the auto leveling method. I do. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the Z stage 9 by the wafer stage drive system 15 to adjust the focus position and tilt angle of the wafer W.

  Further, the main control system 14 adjusts the position of the wafer W in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the wafer laser interferometer 13. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the XY stage 10 by the wafer stage drive system 15 to adjust the position of the wafer W in the X direction, the Y direction, and the rotation direction. .

  At the time of exposure, the main control system 14 transmits a control signal to a mechanism incorporated in the reticle stage RST and also transmits a control signal to the wafer stage drive system 15, and a speed ratio corresponding to the projection magnification of the projection optical system PL. Then, the reticle stage RST and the XY stage 10 are driven to project and expose the pattern image of the reticle R into a predetermined shot area on the wafer W. Thereafter, the main control system 14 transmits a control signal to the wafer stage drive system 15, and drives the XY stage 10 by the wafer stage drive system 15, thereby step-moving another shot area on the wafer W to the exposure position.

  In this way, the operation of scanning and exposing the pattern image of the reticle R on the wafer W by the step-and-scan method is repeated. That is, in the present embodiment, the position of the reticle R and the wafer W is controlled using the wafer stage drive system 15 and the wafer laser interferometer 13, and the short side direction of the rectangular stationary exposure region and the stationary illumination region, that is, the Y direction. Are moved along the reticle stage RST and the XY stage 10 along with the reticle R and the wafer W in synchronization (scanning), thereby having a width equal to the long side of the static exposure region on the wafer W and A reticle pattern is scanned and exposed to an area having a length corresponding to the scanning amount (movement amount) of the wafer W.

  FIG. 2 is a diagram schematically showing a configuration between the boundary lens and the wafer in the present embodiment. Referring to FIG. 2, in the projection optical system PL according to the present embodiment, the reticle R side (object side) surface is in contact with the second liquid Lm2, and the wafer W side (image side) surface is in contact with the first liquid Lm1. The plane parallel plate Lp is disposed on the most wafer side. A boundary lens Lb is disposed adjacent to the plane parallel plate Lp, with the reticle R side contacting the gas and the wafer W side contacting the second liquid Lm2.

In the present embodiment, pure water (deionized water) that can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, for example, H ⁺ , as the first liquid Lm1 and the second liquid Lm2 having a refractive index greater than 1.1, for example. Water containing Cs ⁺ , K ⁺ , Cl ⁻ , SO ₄ ²⁻ , PO ₄ ²⁻ , isopropanol, glycerol, hexane, heptane, decane, and the like can be used. The boundary lens Lb is a positive lens having a convex surface on the reticle R side and a flat surface on the wafer W side. The boundary lens Lb and the plane parallel plate Lp are made of, for example, quartz.

  In a step-and-scan type exposure apparatus that performs scanning exposure while moving the wafer W relative to the projection optical system PL, between the boundary lens Lb of the projection optical system PL and the wafer W from the start to the end of the scanning exposure. For example, the technique disclosed in International Publication No. WO99 / 49504, the technique disclosed in Japanese Patent Application Laid-Open No. 10-303114, or the like can be used to keep the liquid (Lm1, Lm2) filled in the optical path. .

  In the technique disclosed in International Publication No. WO99 / 49504, the liquid adjusted to a predetermined temperature from the liquid supply device via the supply pipe and the discharge nozzle is filled with the optical path between the boundary lens Lb and the wafer W. The liquid is recovered from the wafer W via the recovery pipe and the inflow nozzle by the liquid supply device. On the other hand, in the technique disclosed in Japanese Patent Application Laid-Open No. 10-303114, the wafer holder table is configured in a container shape so that the liquid can be accommodated, and the wafer W is evacuated at the center of the inner bottom (in the liquid). It is positioned and held by suction. Further, the lens barrel tip of the projection optical system PL reaches the liquid, and the optical surface on the wafer side of the boundary lens Lb reaches the liquid.

  In the present embodiment, as shown in FIG. 1, the first liquid Lm1 is circulated in the optical path between the plane parallel plate Lp and the wafer W using the first water supply / drainage mechanism 21. Further, the second liquid Lm2 is circulated in the optical path between the boundary lens Lb and the plane parallel plate Lp using the second water supply / drainage mechanism 22. In this way, by circulating the liquid as the immersion liquid at a minute flow rate, it is possible to prevent the liquid from being altered by the effects of antiseptic and mildewproofing.

  As described above, in the exposure apparatus, in order to project and expose a fine pattern with high accuracy, the light amount distribution on the image plane of the projection optical system can be measured, and the light amount distribution can be controlled to a desired state as necessary. is necessary. Therefore, in the exposure apparatus of the present embodiment, the light amount distribution on the image plane of the immersion type projection optical system PL (and thus the exposure light amount distribution in the exposure region (stationary exposure region) of the wafer W as the photosensitive substrate) is measured. The light quantity measuring device is provided.

  FIG. 3 is a view schematically showing a configuration of a light amount measuring apparatus mounted on the exposure apparatus of the present embodiment. Referring to FIG. 3, the light quantity measuring device of the present embodiment is provided inside or on the side of the wafer stage (9, 10), for example, and is disposed in the vicinity of the image plane of the immersion type projection optical system PL. A member 31 and a photodetector 32 that detects light via the light transmitting member 31 are provided. The light transmitting member 31 is formed of, for example, quartz or fluorite, and is positioned so that the incident surface thereof coincides with the image surface of the projection optical system PL.

  On the incident surface side of the light transmissive member 31, an opening 31 a such as a pinhole for limiting light incident on the light transmissive member 31 and thus limiting light incident on the photodetector 32 is formed. The opening 31a is formed, for example, by providing a light-shielding metal film 31aa or the like in a region excluding the opening 31a on the incident surface of the light transmitting member 31. On the other hand, on the exit surface side (light detector 32 side) of the light transmitting member 31, a prism for condensing light through the opening 31 a and the inside of the light transmitting member 31 by the prism action and guiding it to the light detector 32. A condensing part 31b is provided.

  The prism condensing unit 31b has an optical surface 31ba corresponding to a conical surface whose apex is directed toward the photodetector 32, and an optical surface 31bb parallel to the image surface of the projection optical system PL. More specifically, the conical surface that defines the optical surface 31ba has a rotation axis 31bc that passes through the center of the opening 31a as the light limiting means and is orthogonal to the image surface of the projection optical system PL. The prism condensing part 31b is formed integrally with the main body of the light transmissive member 31, for example, by shaving the light transmissive member 31 having a plane parallel plate shape.

  As described above, in the light amount measuring apparatus that measures the light amount on the image plane of the immersion type projection optical system PL, the liquid Lm1 interposed between the image plane of the projection optical system PL and the parallel plane plate Lp is the wafer stage ( 9 and 10), it is necessary to dispose the light transmitting member 31 in the vicinity of the image plane of the projection optical system PL so as not to leak into the interior of the projection optical system PL. However, when this light transmitting member is formed in a parallel plane plate shape, light that reaches the image plane of the projection optical system at a large incident angle of a predetermined value or more propagates through the inside of the light transmitting member. Since it is reflected by the boundary surface between the gas layer (air layer) interposed between the light transmitting member and the light transmitting member (that is, the exit surface of the light transmitting member), the projection optics is not detected by the photodetector. The light quantity distribution on the image plane of the system cannot be measured with high accuracy.

  On the other hand, a condensing lens is attached to a plane-parallel plate-shaped light transmission member by a method such as optical contact, bonding, or fusion, and light that reaches the image plane of the projection optical system at a large incident angle is collected by the action of the condensing lens. A configuration in which the light is taken into the photodetector can also be considered. However, in the optical contact method, there is anxiety about the attachment strength of the condensing lens to the light transmission member. In the bonding technique, it is difficult to obtain an adhesive having sufficient durability against short wavelength light. In the fusion method, it is difficult to reliably attach the condenser lens to the light transmitting member.

  In the light quantity measuring device of the present embodiment, the prism condensing part 31b is provided on the exit surface side (light detector 32 side) of the light transmitting member 31, so that light is transmitted through the opening 31a and the inside of the light transmitting member 31. Are condensed by the prism action of the prism condensing part 31 b and guided to the photodetector 32. As a result, light reaching the image plane of the projection optical system PL at a large incident angle equal to or greater than a predetermined value is also detected by the light detector 32, so that the light transmitting member 31 and the light transmitting member 31 are driven by the driving action of the wafer stage (9, 10). The light quantity distribution on the image plane of the projection optical system PL can be measured while moving the photodetector 32 two-dimensionally along the image plane of the projection optical system PL.

  In particular, in the light quantity measuring device of the present embodiment, the prism condensing unit 31b transmits light without using a method such as optical contact, bonding, or fusion, for example, by shaving the light transmitting member 31 having a plane-parallel plate shape. It is formed integrally with the main body of the member 31. As a result, the liquid Lm1 interposed between the light transmission member 31 and the plane parallel plate Lp is surely prevented from leaking into the wafer stage (9, 10), and the light transmission member 31 has high durability. can do.

  As described above, in the light quantity measurement device of the present embodiment, light reaching the image plane (predetermined plane) of the projection optical system PL at a relatively large incident angle is reliably detected, and the light quantity distribution on the image plane of the projection optical system PL. Can be measured with high accuracy. Further, in the exposure apparatus of the present embodiment, the light quantity measurement device is used to increase the light quantity distribution on the image plane of the immersion type projection optical system PL (and thus the exposure light quantity distribution in the exposure area (stationary exposure area) of the wafer W). It is possible to accurately measure and control (adjust) the light amount distribution to a desired state as necessary, and to project and expose a fine pattern of the reticle R onto the exposure region on the wafer W with high accuracy.

  In the above-described embodiment, the prism condensing unit 31b has a truncated cone shape defined by the optical surface 31ba corresponding to the conical surface and the optical surface 31bb parallel to the image surface of the projection optical system PL. Without being limited thereto, various modifications are possible for the form of the prism condensing part 31b. As an example, the prism condensing unit may be configured in a conical shape having apexes.

  In the above-described embodiment, the prism condensing part 31b having a single truncated cone shape is provided so as to correspond to the position of the opening 31a. However, the present invention is not limited to this, and as shown in FIG. 4, it is two-dimensionally arranged along a plane parallel to the image plane of the projection optical system PL (that is, a plane parallel to the incident plane of the light transmission member 31). A modification using the prism condensing part 41b having a plurality of conical surfaces is also possible.

  As shown in FIG. 5A, the prism condensing unit 41b according to the modification of FIG. 4 includes a large number of minute conical prisms defined only by the optical surface 41ba corresponding to the conical surface. Alternatively, in the modification of FIG. 4, the prism condensing unit 41 b includes an optical surface 41 ba corresponding to the conical surface and an optical surface 41 bb parallel to the image surface of the projection optical system PL, as shown in FIG. It can also be configured by a large number of minute truncated cone prisms.

  In the modification of FIG. 4, it is also possible to use a prism condensing unit 41 b having a plurality of pyramidal surfaces (a quadrangular pyramid surface, a triangular pyramid surface, etc.) arranged two-dimensionally. That is, although not shown, the prism condensing unit 41b is configured by a large number of minute pyramid prisms defined only by an optical surface corresponding to the pyramid surface (corresponding to 41ba in FIG. 5A), or a pyramid. A large number of minute surfaces defined by an optical surface corresponding to the surface (corresponding to 41ba in FIG. 5B) and an optical surface parallel to the image surface of the projection optical system PL (corresponding to 41bb in FIG. 5B). It can also be constituted by a truncated pyramid prism. In any case, it is preferable that the prism condensing part 41b is formed integrally with the main body of the light transmitting member 31 by cutting the light transmitting member 31 having a plane-parallel plate shape, for example.

  In the modification of FIG. 4, a part of the light passing through the opening 31 a and the inside of the light transmission member 31 is a gas layer (air layer) interposed between the photodetector 32 and the light transmission member 31 and the light transmission member. The light is reflected at the boundary surface with 31 (that is, the exit surface of the light transmitting member 31). However, light having various incident angles is reflected almost uniformly by the diffusion portion formed on the exit surface of the light transmitting member 31 without depending on the incident angle on the image plane of the projection optical system PL. Therefore, in the modified example of FIG. 4 as well, the light amount distribution on the image plane of the projection optical system PL can be measured with high accuracy as in the embodiment of FIG.

  In the modification of FIG. 4, projection is performed while two-dimensionally moving the light transmission member 31 having a minute opening 31 a such as a pinhole and the photodetector 32 along the image plane of the projection optical system PL. The light quantity distribution on the image plane of the optical system PL is measured. However, the present invention is not limited to this, and as shown in FIG. 6, light is transmitted through a relatively large opening 31a ′ having a shape corresponding to the effective imaging region (corresponding to the static exposure region of the wafer W) of the projection optical system PL. A modification that is provided on the incident surface side of the member 31 and collectively measures the total amount of light reaching the entire effective imaging region of the projection optical system PL (the total amount of exposure light reaching the entire static exposure region of the wafer W). Examples are also possible.

  Further, in the embodiment of FIG. 3, the modification of FIG. 4, and the modification of FIG. 6, openings 31 a and 31 a ′ serving as light restricting means for restricting light incident on the photodetector 32 are provided as light transmitting members 31. It is formed on the incident surface side. However, the present invention is not limited to this, and the position of the image plane (predetermined plane) of the projection optical system PL slightly spaced from the light transmission member 31 or the position optically conjugate with the image plane of the projection optical system PL (specifically Specifically, the light limiting means can be provided in the object plane position of the projection optical system PL where the reticle R is to be set.

  4, the prism condensing part 41b as a diffusing part is configured by two-dimensionally forming a large number of conical surfaces or a large number of pyramidal surfaces on the exit surface side of the light transmission member 31. However, the present invention is not limited to this, and a prism condensing unit as a diffusing unit can be configured by forming a large number of cylindrical surfaces side by side along one direction on the exit surface side of the light transmitting member.

  In the exposure apparatus of the above-described embodiment, the reticle (mask) is illuminated by the illumination device (illumination process), and the transfer pattern formed on the mask is exposed to the photosensitive substrate using the projection optical system (exposure process). Thus, a micro device (semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. Hereinafter, referring to the flowchart of FIG. 7 for an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment. I will explain.

  First, in step 301 of FIG. 7, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the one lot of wafers. Thereafter, in step 303, using the exposure apparatus of the present embodiment, the image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of one lot via the projection optical system. Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, the resist pattern is etched on the one lot of wafers to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each wafer.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput. In steps 301 to 305, a metal is deposited on the wafer, a resist is applied on the metal film, and exposure, development, and etching processes are performed. Prior to these processes, on the wafer. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the exposure apparatus of this embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 8, in the pattern formation process 401, a so-called photolithography process is performed in which the exposure pattern of the present embodiment is used to transfer and expose the mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

  Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter forming step 402, a cell assembly step 403 is executed. In the cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step 401, the color filter obtained in the color filter formation step 402, and the like.

  In the cell assembly step 403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step 401 and the color filter obtained in the color filter formation step 402, and a liquid crystal panel (liquid crystal cell) is obtained. ). Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

In the above-described embodiment, the ArF excimer laser light source is used. However, the present invention is not limited to this, and other appropriate light sources such as an F ₂ laser light source can also be used. However, when F ₂ laser light is used as exposure light, a fluorine-based liquid such as fluorine-based oil or perfluorinated polyether (PFPE) that can transmit the F ₂ laser light is used as the liquid.

  In the above-described embodiment, the present invention is applied to the light amount measuring device that measures the light amount on the image plane of the immersion type projection optical system. However, the present invention is not limited to this, and immersion liquid is used. The present invention can also be applied to a light amount measuring device that measures the light amount on the image plane of a dry projection optical system that is not, and a general light amount measuring device that measures the light amount on a predetermined surface.

It is a figure which shows schematically the structure of the exposure apparatus concerning embodiment of this invention. It is a figure which shows typically the structure between the boundary lens and wafer in this embodiment. It is a figure which shows schematically the structure of the light quantity measuring device mounted in the exposure apparatus of this embodiment. It is a figure which shows schematically the structure of the modification using the prism condensing part which has the several conical surface or several pyramid surface arrange | positioned two-dimensionally. It is a figure which shows roughly the structural example of the prism condensing part concerning the modification of FIG. FIG. 5 is a diagram schematically showing a configuration of a modification in which the total amount of light reaching the entire effective imaging region of the projection optical system is collectively measured in a configuration similar to FIG. 4. It is a flowchart of the method at the time of obtaining the semiconductor device as a microdevice. It is a flowchart of the method at the time of obtaining the liquid crystal display element as a microdevice.

Explanation of symbols

R reticle RST reticle stage PL projection optical system Lb boundary lens Lp plane parallel plates Lm1, Lm2 (liquid)
W Wafer 1 Illumination optical system 9 Z stage 10 XY stage 12 Moving mirror 13 Wafer laser interferometer 14 Main control system 15 Wafer stage drive system 21 First water supply / drainage mechanism 22 Second water supply / drainage mechanism 31 Light transmission member 31a Opening 31b Prism condensing part 32 Photodetector

Claims (10)

In a light quantity measuring device that measures the light quantity on a predetermined surface,
A light transmissive member disposed on or near the predetermined surface;
A photodetector for detecting light through the predetermined surface and the light transmitting member;
A prism condensing part for condensing light through the predetermined surface and the light transmitting member by a prism action and guiding the light to the light detector is provided on the light detector side of the light transmitting member. A light quantity measuring device characterized by Light limiting means for limiting light incident on the photodetector is provided at the position of the predetermined surface, a position optically conjugate with the predetermined surface, or the predetermined surface side of the light transmitting member. The light quantity measuring device according to claim 1, wherein The light quantity measuring device according to claim 1, wherein the prism condensing unit has an optical surface corresponding to a conical surface whose apex is directed to the photodetector side. The light quantity measuring device according to claim 3, wherein the prism condensing unit further includes an optical surface parallel to the predetermined surface. 5. The light quantity measuring device according to claim 3, wherein the conical surface has a rotation axis that passes through a center of an opening as the light limiting unit and is orthogonal to the predetermined surface. 5. The light quantity measuring device according to claim 1, wherein the prism condensing unit has a plurality of conical surfaces or a plurality of pyramid surfaces arranged two-dimensionally. The light quantity measuring device according to claim 1, wherein the prism condensing unit is formed integrally with a main body of the light transmitting member. In an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate via a projection optical system,
An exposure apparatus comprising the light amount measuring device according to claim 1 for measuring a light amount in an exposure region on the photosensitive substrate. 9. The exposure apparatus according to claim 8, wherein an optical path between the projection optical system and the photosensitive substrate is filled with a liquid. An exposure step of exposing the predetermined pattern to the photosensitive substrate using the exposure apparatus according to claim 8 or 9,
And a development step of developing the photosensitive substrate exposed in the exposure step.

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