JP2007067015A5

JP2007067015A5 -

Info

Publication number: JP2007067015A5
Application number: JP2005248344A
Authority: JP
Filing date: 2005-08-29
Publication date: 2008-11-06
Anticipated expiration: 2025-08-29

Description

図８は、本発明の実施の形態に用いることが出来るケミカルドライエッチング装置（ＣＤＥ装置）の模式断面図である。
このケミカルドライエッチング装置には、処理チャンバ１００と、この上部天井部分に連通するように接続されたガス輸送管１７１と、が設けられている。このガス輸送管１７１には誘電体（例えば、石英やアルミナ）からなる放電管１７０が接続されている。そして、放電管１７０に対して直交するようにマイクロ波導波管１５０が接続されている。マイクロ波導波管１５０の放電管１７０に面する部分には、マイクロ波Ｍを放電管１７０に向けて放射する環状のスロット１６０が設けられている。放電管１７０の一端には、ガス導入管１１０が取り付けられている。また、処理チャンバ１００の底部には排気管１２０が接続されており、排気管１２０の他端には図示しない真空ポンプなどの排気手段が接続されている。この排気手段により処理チャンバ１００内を排気Ｅ２するとともに、これに連通するガス輸送管１７１や放電管１７０をも排気し、所定の減圧雰囲気を維持する。処理チャンバ１００の内部の処理室１００ａには、基体４０を載置するための載置台１３０が設けられている。 FIG. 8 is a schematic cross-sectional view of a chemical dry etching apparatus (CDE apparatus) that can be used in the embodiment of the present invention.
This chemical dry etching apparatus is provided with a processing chamber 100 and a gas transport pipe 171 connected to communicate with the upper ceiling portion. A discharge tube 170 made of a dielectric material (for example, quartz or alumina) is connected to the gas transport tube 171. A microwave waveguide 150 is connected so as to be orthogonal to the discharge tube 170 . A portion of the microwave waveguide 150 facing the discharge tube 170 is provided with an annular slot 160 that radiates the microwave M toward the discharge tube 170. A gas introduction tube 110 is attached to one end of the discharge tube 170. An exhaust pipe 120 is connected to the bottom of the processing chamber 100, and an exhaust means such as a vacuum pump (not shown) is connected to the other end of the exhaust pipe 120. The exhaust means E2 exhausts the inside of the processing chamber 100 and exhausts the gas transport pipe 171 and the discharge pipe 170 communicating therewith to maintain a predetermined reduced pressure atmosphere. In the processing chamber 100 a inside the processing chamber 100, a mounting table 130 for mounting the base body 40 is provided.

Claims

A method of forming a metal film in which at least a part thereof is etched after film formation,
A source gas containing a metal or ruthenium-containing gas having a body-centered cubic lattice structure and a hydrogen gas, and a nitrogen gas are allowed to flow over the substrate to decompose the source gas, thereby forming the metal or the ruthenium. A film forming method comprising forming a metal film on the substrate.

2. The film forming method according to claim 1, wherein the metal is any one selected from the group consisting of tungsten, tantalum, molybdenum, chromium, niobium, vanadium, and europium.

Forming a plurality of nuclei containing tungsten on the substrate by flowing a gas containing tungsten, a gas containing silicon, and a hydrogen gas over the substrate;
Forming a continuous film mainly composed of tungsten on the substrate by flowing a gas containing tungsten, hydrogen gas, and nitrogen gas over the substrate;
The film forming method according to claim 1, further comprising:

The film formation method according to claim 1, wherein the film formation is performed in a range of 3 kilopascals to 15 kilopascals.

The film forming method according to claim 1, wherein a flow rate of the nitrogen gas is set to be not less than half of a flow rate of the source gas.

The film forming method according to claim 1, wherein the source gas is decomposed by heating.

A film forming method according to claim 1, wherein the metal film is embedded in a contact hole portion of a semiconductor device.

An electronic device manufacturing method comprising a step of forming the metal film by the film forming method according to claim 1.

9. The method of manufacturing an electronic device according to claim 8 , further comprising a step of etching at least a part of the metal film.

10. The method of manufacturing an electronic device according to claim 9, wherein the etching is performed by using neutral active species as a main component.

Forming a contact hole in the insulating film;
Forming the metal film so as to fill the contact hole by the film forming method according to claim 1;
Removing the metal film formed on the insulating film by etch back mainly composed of neutral active species;
An electronic device manufacturing method comprising:

A metal film forming apparatus in which at least part of the film is etched after film formation,
A processing chamber capable of maintaining a reduced pressure atmosphere;
A jig for placing and holding a substrate to be deposited in the processing chamber;
A gas introduction pipe for introducing a source gas and a nitrogen gas containing a gas containing hydrogen or a gas containing metal or ruthenium having a body-centered cubic lattice structure in the processing chamber;
A heating device for heating the gas introduced from the gas introduction pipe;
A gas exhaust pipe for exhausting exhaust gas from the processing chamber to the outside;
A film forming apparatus comprising: