JP2007066691A - Assembling substrate of display device, and its manufacturing method - Google Patents

Assembling substrate of display device, and its manufacturing method Download PDF

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JP2007066691A
JP2007066691A JP2005251024A JP2005251024A JP2007066691A JP 2007066691 A JP2007066691 A JP 2007066691A JP 2005251024 A JP2005251024 A JP 2005251024A JP 2005251024 A JP2005251024 A JP 2005251024A JP 2007066691 A JP2007066691 A JP 2007066691A
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layer
wavelength conversion
optical wavelength
substrate according
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Chi Ming Cheng
▲ち▼民 鄭
Chien-Chih Chiang
建志 江
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Univision Technology Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an assembling substrate of a display device for preventing organic light emitting element from damages caused by moisture or out gas during a heat treatment, and also to provide its manufacturing method. <P>SOLUTION: In an OLED (organic EL display), a translucent circuit board 10a, an optical wavelength conversion layer 20a, an inorganic covering film layer 40a, and an organic light-emitting element 50a are included, while the optical wavelength conversion layer is formed in the translucent circuit board, and the inorganic covering film layer covers the optical wavelength conversion layer, the organic light-emitting element is arranged at an inorganic covering film layer 40a, and the translucent circuit board is formed with glass, quartz, or plastic materials. The inorganic covering film layer has a thickness ranging from 1 μm to 50 μm which is perfectly sufficient for preventing moisture or out gas in the optical wavelength conversion layer from spreading to the organic light-emitting element in the heat treatment, and the inorganic covering film layer has a multiple-layered structure, and the organic light-emitting element is easily formed on the flat surface of the inorganic covering film layer, while the optical wavelength conversion layer has a combination of a color filter (CF) layer, a color conversion medium (CCM) layer or a color filter layer, and a color conversion medium layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、100℃から260℃までの加熱処理における水分またはアウトガスによる有機発光素子の損傷を防ぐための、表示装置の組立基板及びその製造方法に関する。   The present invention relates to an assembly substrate for a display device and a method for manufacturing the same for preventing damage to an organic light emitting element due to moisture or outgas in heat treatment from 100 ° C. to 260 ° C.

図1は、従来技術のOLEDの断面図である。従来技術のOLEDには、ガラス基板10、ガラス基板10に交互に形成された光学波長変換層20及びブラックマトリクス30、光学波長変換層20に形成された有機被膜層40、有機被膜層40に形成された無機バリア層45、並びに無機バリア層45に組み立てられた有機発光素子50がある。   FIG. 1 is a cross-sectional view of a prior art OLED. In the conventional OLED, the glass substrate 10, the optical wavelength conversion layer 20 and the black matrix 30 alternately formed on the glass substrate 10, the organic coating layer 40 formed on the optical wavelength conversion layer 20, and the organic coating layer 40 are formed. And the organic light emitting device 50 assembled to the inorganic barrier layer 45.

また、加熱処理における、光学波長変換層20や有機被膜層40からの水分またはアウトガスによる有機発光素子50の損傷を防ぐために、無機バリア層45が有機被膜層40に形成されている。   In addition, an inorganic barrier layer 45 is formed on the organic coating layer 40 in order to prevent damage to the organic light emitting element 50 due to moisture or outgas from the optical wavelength conversion layer 20 and the organic coating layer 40 in the heat treatment.

光学波長変換層20に有機被膜層40を形成した後、有機被膜層40の表面を洗浄必要があるが、洗浄処理において水分またはアウトガスが有機被膜層40の開口部に吸収されやすく、開口部の水分またはアウトガスが他の処理で蒸発し、有機発光素子50に影響を及ぼしやすく、また、有機被膜層40は、有機材料であるため、水分またはアウトガスが有機被膜層40から生成されやすく、有機発光素子50を損傷し、または影響を及ぼしやすい。   After forming the organic coating layer 40 on the optical wavelength conversion layer 20, it is necessary to clean the surface of the organic coating layer 40, but moisture or outgas is easily absorbed in the opening of the organic coating layer 40 in the cleaning process, Moisture or outgas evaporates by other treatments and easily affects the organic light emitting element 50. Since the organic coating layer 40 is an organic material, moisture or outgas is easily generated from the organic coating layer 40, and organic light emission. The element 50 is likely to be damaged or affected.

本発明は、表示装置の組立基板及びその製造方法に関するものであるが、組立基板は、光学波長変換層や無機被膜層に無機バリア層が形成され、加熱処理において光学波長変換層からの水分またはアウトガスによる有機発光素子の損傷を防ぎ、無機被膜層を生成する前の洗浄処理による光学波長変換層の損傷を防ぐ。   The present invention relates to an assembly substrate for a display device and a method for manufacturing the assembly substrate. In the assembly substrate, an inorganic barrier layer is formed on an optical wavelength conversion layer or an inorganic coating layer, and moisture or The organic light emitting device is prevented from being damaged by outgas, and the optical wavelength conversion layer is prevented from being damaged by the cleaning treatment before the inorganic coating layer is formed.

さらに、本発明では、無機材料によって生成された無機被膜層が提供されているため、無機被膜層の構造は非常に簡潔であり、無機被膜は水分またはアウトガスを吸収しにくく、それによって、無機被膜層は、透明基板から生成される水分またはアウトガスによる有機発光素子の損傷を防ぐことができる。   Furthermore, in the present invention, since the inorganic coating layer produced by the inorganic material is provided, the structure of the inorganic coating layer is very simple, and the inorganic coating is difficult to absorb moisture or outgas, thereby the inorganic coating layer. The layer can prevent damage to the organic light emitting device due to moisture or outgas generated from the transparent substrate.

この発明のひとつの面である組立基板には、透明基板、光学波長変換層、及び無機被膜層が含まれており、光学波長変換層は透明基板に形成され、無機被膜層は光学波長変換層を多い、組立基板は有機発光素子を支えるために用いられ、組立基板及び有機発光素子は、表示装置を形成するため一緒に組み立てられている。   The assembly substrate according to one aspect of the present invention includes a transparent substrate, an optical wavelength conversion layer, and an inorganic coating layer. The optical wavelength conversion layer is formed on the transparent substrate, and the inorganic coating layer is the optical wavelength conversion layer. The assembly substrate is used to support the organic light emitting device, and the assembly substrate and the organic light emitting device are assembled together to form a display device.

さらに、組立基板では、加熱処理において光学波長変換層から生成される水分またはアウトガスによる有機発光素子の損傷を防ぐため、無機バリア層が光学波長変換層や無機被膜層に形成されている。   Further, in the assembly substrate, an inorganic barrier layer is formed on the optical wavelength conversion layer or the inorganic coating layer in order to prevent damage to the organic light emitting element due to moisture or outgas generated from the optical wavelength conversion layer in the heat treatment.

この発明のもうひとつの面であるが組立基板の製造方法には、透明基板の提供、透明基板での光学波長変換層の形成、光学波長変換層での無機被膜層の被膜が含まれる。   As another aspect of the present invention, the method for manufacturing an assembly substrate includes providing a transparent substrate, forming an optical wavelength conversion layer on the transparent substrate, and coating an inorganic coating layer on the optical wavelength conversion layer.

さらに、組立基板の製造方法には、光学波長変換層や無機被膜層での無機バリア層の形成が含まれ、さらに、光学波長変換層に無機バリア層を形成した後で、有機発光素子を無機バリア層に組み立てて、表示装置を形成することができることに加え、組立基板の製造方法には、光学波長変換層や無機バリア層を無機被膜層で覆った後の平坦化処理が含まれる。   Furthermore, the manufacturing method of the assembly substrate includes the formation of an inorganic barrier layer with an optical wavelength conversion layer or an inorganic coating layer. Further, after the inorganic barrier layer is formed on the optical wavelength conversion layer, the organic light-emitting element is made inorganic. In addition to being able to be assembled with the barrier layer to form a display device, the manufacturing method of the assembly substrate includes a planarization treatment after covering the optical wavelength conversion layer or the inorganic barrier layer with the inorganic coating layer.

前述の一般的な説明と後述の詳細説明は、典型的なものであり、本発明をより理解できるように提供されているものであるが、本発明のその他の利点及び特徴については、以下の説明、図面及び請求項によって明白なものとなる。   The foregoing general description and the following detailed description are exemplary and are provided to provide a further understanding of the invention. Other advantages and features of the invention are described below. It will be apparent from the description, drawings, and claims.

図2は、本発明の実施例1のOLED(有機ELディスプレイ)の断面図であるが、OLED1aには、透明基板10a、光学波長変換層20a、無機被膜層40a、及び有機発光素子50aが含まれ、光学波長変換層20aは透明基板10aに形成され、無機被膜層40aは光学波長変換層20aを覆い、有機発光素子50aは無機被膜層40aに配置され、また、透明基板10aはガラス、石英またはプラスチック材料で形成することができ、透明基板10aには、TFT(薄膜トランジスタ)などのアクティブマトリクスまたは単純マトリクス方式があり、さらに有機発光素子50aは、OLED(有機発光ダイオード)またはPLED(ポリマー発光ダイオード)とすることができる。   FIG. 2 is a cross-sectional view of the OLED (organic EL display) of Example 1 of the present invention. The OLED 1a includes a transparent substrate 10a, an optical wavelength conversion layer 20a, an inorganic coating layer 40a, and an organic light emitting element 50a. The optical wavelength conversion layer 20a is formed on the transparent substrate 10a, the inorganic coating layer 40a covers the optical wavelength conversion layer 20a, the organic light emitting element 50a is disposed on the inorganic coating layer 40a, and the transparent substrate 10a is made of glass or quartz. Alternatively, the transparent substrate 10a has an active matrix or simple matrix system such as a TFT (thin film transistor), and the organic light emitting element 50a is an OLED (organic light emitting diode) or PLED (polymer light emitting diode). ).

さらに、無機被膜層40aは、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、酸化チタン、窒化チタン、酸化ジルコニウム、窒化ジルコニウム、酸化アルミニウム、窒化アルミニウム、酸化スズ、酸化インジウム、酸化鉛、酸化ホウ素、酸化カルシウム、SiOxCiHj、SiNyCiHj、SiOxNyCiHjを含むグループから選ばれた材料によって生成され、無機被膜層40aには、光学波長変換層20aの水分またはアウトガスが加熱処理において有機発光素子50aに広がることを防ぐのに完璧な1μmから50μmの厚みがあり、無機被膜層40aは多層構造であり、また、有機発光素子50aは無機被膜層40aの平坦な表面に簡単に形成され、光学波長変換層20aは、カラーフィルター(CF)層、色変換媒体(CCM)層、またはカラーフィルター層及び色変換媒体層の組み合わせとすることができ、有機発光素子50aは、白または青とすることができ、さらに、OLEDの表示効果を確実にするため、無機被膜層40aには、80%を上回る透過率がある。   Furthermore, the inorganic coating layer 40a is made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, titanium oxide, titanium nitride, zirconium oxide, zirconium nitride, aluminum oxide, aluminum nitride, tin oxide, indium oxide, lead oxide, boron oxide. , Calcium oxide, SiOxCiHj, SiNyCiHj, SiOxNyCiHj, and the inorganic coating layer 40a prevents moisture or outgas from spreading to the organic light emitting device 50a in the heat treatment. The inorganic coating layer 40a has a multilayer structure, and the organic light emitting element 50a is easily formed on the flat surface of the inorganic coating layer 40a. The optical wavelength conversion layer 20a has a thickness of 1 μm to 50 μm. Color filter (CF) layer, color conversion medium (CCM) layer, or a combination of a color filter layer and a color conversion medium layer, and the organic light emitting device 50a can be white or blue, and further, inorganic to ensure the display effect of the OLED. The coating layer 40a has a transmittance exceeding 80%.

図3は、本発明の実施例2のOLED1bの断面図であるが、光学波長変換層20bの水分またはアウトガスによる有機発光素子50bの損傷を防ぎ、無機被膜層40bの生成前の洗浄処理による光学波長変換層20bの損傷を防ぐため、CVD(化学気相成長法)またはPVD(物理気相成長法)の方法によって、無機バリア層35bを光学波長変換層20bに形成することができる。   FIG. 3 is a cross-sectional view of the OLED 1b according to the second embodiment of the present invention. The OLED 1b according to the second embodiment of the present invention prevents damage to the organic light emitting device 50b due to moisture or outgas in the optical wavelength conversion layer 20b. In order to prevent damage to the wavelength conversion layer 20b, the inorganic barrier layer 35b can be formed on the optical wavelength conversion layer 20b by CVD (chemical vapor deposition) or PVD (physical vapor deposition).

図4は、本発明の実施例3のOLED1cの断面図であるが、光学波長変換層20cに無機バリア層35cを形成する以外に、CVDまたはPVDの方法によって無機被膜層40cに無機バリア層45cを形成することができ、無機バリア層35c、40cは、光学波長変換層20cの水分またはアウトガスにより有機発光素子50cの損傷を防ぐことができるだけでなく、素子パターンの作成におけるエッチング液による透明電極の損傷を防ぐこともできるが、無機バリア層(35b、35c、または45c)従来技術のバリア層45の厚みより薄く、言い換えれば、無機バリア層(35b、35c、または45c)の厚みは、500×10−10mから5000×10−10mで従来技術と同じ効果をもち、また、無機バリア層(35b、35c、または45c)は多層構造とすることができる。   FIG. 4 is a cross-sectional view of the OLED 1c of Example 3 of the present invention. In addition to forming the inorganic barrier layer 35c on the optical wavelength conversion layer 20c, the inorganic barrier layer 45c is formed on the inorganic coating layer 40c by the CVD or PVD method. The inorganic barrier layers 35c and 40c can not only prevent damage to the organic light emitting device 50c due to moisture or outgas in the optical wavelength conversion layer 20c, but also can be used to form transparent electrodes by an etching solution in device pattern creation. Although damage can also be prevented, the inorganic barrier layer (35b, 35c, or 45c) is thinner than the barrier layer 45 of the prior art, in other words, the thickness of the inorganic barrier layer (35b, 35c, or 45c) is 500 × 10-10 m to 5000 × 10 −10 m have the same effect as the prior art, and the inorganic barrier layer (35b, 35c or 45c) can be a multilayer structure.

図5Aから5Cは、それぞれ本発明の実施例1のOLED製造の3つの断面図、図6は、本発明の実施例1の組立基板の製造方法のフローチャートで、 本発明のディスプレイ用の組立基板の製造方法では、TFTアレイのあるガラス基板または明基板10a(S100)、透明基板10aでの光学波長変換層20aの形成(S102)が提供され、また光学波長変換層20aのパターンは、ブラックマトリクス30aによって分離され、光学波長変換層20aを無機被膜層40aで覆っており(S104)、さらには、無機被膜層40aは、酸化ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、酸化チタン、窒化チタン、酸化ジルコニウム、窒化ジルコニウム、酸化アルミニウム、窒化アルミニウム、酸化スズ、酸化インジウム、酸化鉛、酸化ホウ素、酸化カルシウム、SiOxCiHj、SiNyCiHj、SiOxNyCiHjを含むグループから選ばれた材料によって生成されており、無機被膜層40aは、CVD、PVD、またはSOG(スピンオンガラス)の方法によって形成することができ、無機被膜層40aは多層構造であり、さらに、該方法には、無機被膜層40aでの有機発光素子50aの組立が含まれている。   5A to 5C are three cross-sectional views of manufacturing the OLED according to the first embodiment of the present invention, and FIG. 6 is a flowchart of the manufacturing method of the assembled substrate according to the first embodiment of the present invention. In this manufacturing method, the formation of the optical wavelength conversion layer 20a on the glass substrate or the bright substrate 10a (S100) with the TFT array and the transparent substrate 10a (S102) is provided, and the pattern of the optical wavelength conversion layer 20a is a black matrix. 30a, and the optical wavelength conversion layer 20a is covered with the inorganic coating layer 40a (S104). Furthermore, the inorganic coating layer 40a is made of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, titanium oxide, titanium nitride. , Zirconium oxide, zirconium nitride, aluminum oxide, aluminum nitride, tin oxide, indium oxide, lead oxide, The inorganic coating layer 40a is formed by a material selected from the group including boron oxide, calcium oxide, SiOxCiHj, SiNyCiHj, and SiOxNyCiHj, and can be formed by a CVD, PVD, or SOG (spin-on-glass) method. The inorganic coating layer 40a has a multilayer structure, and the method further includes assembling the organic light emitting device 50a with the inorganic coating layer 40a.

さらに、無機被膜層40aには、1μmから50μmの厚みがあり、無機被膜層40aが20℃から300℃までの温度及び0.0005トルから1atmまでの圧力で光学波長変換層を覆う。   Further, the inorganic coating layer 40a has a thickness of 1 μm to 50 μm, and the inorganic coating layer 40a covers the optical wavelength conversion layer at a temperature from 20 ° C. to 300 ° C. and a pressure from 0.0005 Torr to 1 atm.

また、該方法には、光学波長変換層や無機被膜層での無機バリア層の形成が含まれ、さらに、光学波長変換層に無機バリア層を形成した後に表示装置を形成するために、無機バリア層に有機発光素子を組み立てることができ、該方法には、光学波長変換層または無機バリア層を無機被膜層で覆った後の平坦化処理が含まれる。   The method also includes the formation of an inorganic barrier layer with an optical wavelength conversion layer or an inorganic coating layer, and further, an inorganic barrier layer is formed to form a display device after the inorganic barrier layer is formed on the optical wavelength conversion layer. An organic light emitting device can be assembled in the layer, and the method includes a planarization treatment after covering the optical wavelength conversion layer or the inorganic barrier layer with the inorganic coating layer.

まとめると、無機バリア層(35b、35c、または45c)は、加熱処理における光学波長変換層(20a、20b、または20c)からの水分またはアウトガスによる有機発光素子(50a、50b、または50c)の損傷を防ぎ、無機被膜層(40a、40b、または40c)の形成後の洗浄処理による光学波長変換層 (20a、20b、または20c)の損傷を防ぐために提供されている。   In summary, the inorganic barrier layer (35b, 35c, or 45c) can damage the organic light emitting device (50a, 50b, or 50c) due to moisture or outgas from the optical wavelength conversion layer (20a, 20b, or 20c) in the heat treatment. It is provided to prevent damage to the optical wavelength conversion layer (20a, 20b, or 20c) due to the cleaning treatment after the formation of the inorganic coating layer (40a, 40b, or 40c).

さらに、無機被膜層(40a、40b、または40c)は無機材料によって生成されているため、無機被膜層(40a、40b、または40c)の構造は非常に簡潔であり、無機被膜(40a、40b、または40c)は水分またはアウトガスを吸収しにくく、それによって、無機被膜層(40a、40b、または40c)は、透明基板(10a、10b、または10c)から生成される水分またはアウトガスによる有機発光素子(50a、50b、または50c)の損傷を防ぐことができる。   Furthermore, since the inorganic coating layer (40a, 40b, or 40c) is made of an inorganic material, the structure of the inorganic coating layer (40a, 40b, or 40c) is very simple, and the inorganic coating layer (40a, 40b, 40c, Or 40c) hardly absorbs moisture or outgas, so that the inorganic coating layer (40a, 40b, or 40c) is an organic light-emitting device (moisture or outgas generated from the transparent substrate (10a, 10b, or 10c)). Damage to 50a, 50b, or 50c) can be prevented.

本発明について、最良の実施例をいくつか挙げて説明したが、本発明はそれに限定されるものではなく、前述の説明でも、様々な置き換えや変更が提案されており、この技術の通常の技能を有するものによってその他の形態も行うことができるため、すべてのこれらの置き換え及び変更は、別紙の特許請求の範囲の各請求項に定義された範囲に含まれるものである。   Although the present invention has been described with reference to some of the best embodiments, the present invention is not limited thereto, and various replacements and modifications have been proposed in the above description, and the ordinary skill of this technology is described. All such substitutions and modifications are intended to be included within the scope of the appended claims as defined by the appended claims.

本発明の様々な目的及び利点は、詳細な説明を読む際に、以下の添付図面と組み合わせることにより、より理解を深めることができる。
従来技術のOLED断面図 本発明の実施例1のOLED断面図 本発明の実施例2のOLED断面図 本発明の実施例3のOLED断面図 本発明の実施例1のOLED製造の断面図 本発明の実施例1のOLED製造の断面図 本発明の実施例1のOLED製造の断面図 本発明の実施例1の組立基板の製造方法のフローチャート
The various objects and advantages of the present invention can be better understood when combined with the following accompanying drawings when reading the detailed description.
Cross-sectional view of conventional OLED OLED sectional view of Example 1 of the present invention OLED sectional view of Example 2 of the present invention OLED sectional view of Example 3 of the present invention Sectional drawing of OLED manufacture of Example 1 of this invention Sectional drawing of OLED manufacture of Example 1 of this invention Sectional drawing of OLED manufacture of Example 1 of this invention 1 is a flowchart of a method for manufacturing an assembly board according to a first embodiment of the present invention.

符号の説明Explanation of symbols

1 OLED
10 基板
20 光学波長変換層
30 ブラックマトリクス
40 被膜層
45 バリア層
50 有機発光素子
1a、1b、1c OLED
10a、10b、10c 基板
30a、30b、30c ブラックマトリクス
20a、20b、20c 光学波長変換層
35b、35c 無機バリア層
45c 無機バリア層
40a、40b、40c 無機被膜層
50a、50b、50c 有機発光素子
1 OLED
DESCRIPTION OF SYMBOLS 10 Board | substrate 20 Optical wavelength conversion layer 30 Black matrix 40 Coating layer 45 Barrier layer 50 Organic light emitting element 1a, 1b, 1c OLED
10a, 10b, 10c Substrate 30a, 30b, 30c Black matrix 20a, 20b, 20c Optical wavelength conversion layer 35b, 35c Inorganic barrier layer 45c Inorganic barrier layer 40a, 40b, 40c Inorganic coating layer 50a, 50b, 50c Organic light emitting device

Claims (20)

透明基板、透明基板の上に形成された光学波長変換層、光学波長変換層を覆う無機被膜層によって構成され、有機発光素子を支え、有機発光素子と組み立てられて表示装置を形成することを特徴とする組立基板。 It is composed of a transparent substrate, an optical wavelength conversion layer formed on the transparent substrate, and an inorganic coating layer covering the optical wavelength conversion layer. The organic light-emitting element is supported and assembled with the organic light-emitting element to form a display device. Assembled board. 無機被膜層の厚みが1μmから50μmであることを特徴とする請求項1記載の組立基板。 2. The assembly substrate according to claim 1, wherein the inorganic coating layer has a thickness of 1 μm to 50 μm. 光学波長変換層に無機バリア層を形成することを特徴とする請求項1記載の組立基板。 2. The assembly substrate according to claim 1, wherein an inorganic barrier layer is formed on the optical wavelength conversion layer. 無機被膜層に無機バリア層を形成することを特徴とする請求項1記載の組立基板。 2. The assembly substrate according to claim 1, wherein an inorganic barrier layer is formed on the inorganic coating layer. 無機バリア層に500×10−10mから5000×10−10mの厚みがあることを特徴とする請求項4記載の組立基板。 5. The assembly substrate according to claim 4, wherein the inorganic barrier layer has a thickness of 500 × 10 −10 m to 5000 × 10 −10 m. 無機バリア層が多層構造であることを特徴とする請求項4記載の組立基板。 The assembly substrate according to claim 4, wherein the inorganic barrier layer has a multilayer structure. 無機被膜層が酸化ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、酸化チタン、窒化チタン、酸化ジルコニウム、窒化ジルコニウム、酸化アルミニウム、窒化アルミニウム、酸化スズ、酸化インジウム、酸化鉛、酸化ホウ素、酸化カルシウム、SiOxCiHj、SiNyCiHj、SiOxNyCiHjを含むグループから選ばれた材料によって生成されていることを特徴とする請求項1記載の組立基板。 Inorganic coating layer is silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, titanium oxide, titanium nitride, zirconium oxide, zirconium nitride, aluminum oxide, aluminum nitride, tin oxide, indium oxide, lead oxide, boron oxide, calcium oxide, 2. The assembly substrate according to claim 1, wherein the assembly substrate is made of a material selected from a group including SiOxCiHj, SiNyCiHj, and SiOxNyCiHj. 光学波長変換層がカラーフィルター層、色変換媒体層またはカラーフィルター層及び色変換媒体層の組み合わせであることを特徴とする請求項1記載の組立基板。 2. The assembly substrate according to claim 1, wherein the optical wavelength conversion layer is a color filter layer, a color conversion medium layer, or a combination of a color filter layer and a color conversion medium layer. 無機被膜層が多層構造であることを特徴とする請求項1記載の組立基板。 The assembly substrate according to claim 1, wherein the inorganic coating layer has a multilayer structure. 有機発光素子がOLED(有機発光ダイオード)またはPLED(ポリマー発光ダイオード)であり、透明基板がガラス、石英またはプラスチック材料によって生成されていることを特徴とする請求項1記載の組立基板。 2. The assembly substrate according to claim 1, wherein the organic light emitting element is an OLED (organic light emitting diode) or a PLED (polymer light emitting diode), and the transparent substrate is made of glass, quartz, or a plastic material. 透明基板を提供し、透明基板に光学波長変換層を形成し、光学波長変換層に無機被膜層を覆うことを特徴とする組立基板の製造方法。 A method for producing an assembled substrate, comprising: providing a transparent substrate; forming an optical wavelength conversion layer on the transparent substrate; and covering the inorganic coating layer on the optical wavelength conversion layer. 無機被膜層にCVD(化学気相成長法)PVD(物理気相成長法)またはSOG(スピンオンガラス)方法によって生成された1μmから50μmの厚みがあることを特徴とする請求項11記載の組立基板の製造方法。 12. The assembly substrate according to claim 11, wherein the inorganic coating layer has a thickness of 1 μm to 50 μm produced by a CVD (chemical vapor deposition) PVD (physical vapor deposition) or SOG (spin on glass) method. Manufacturing method. 無機被膜層が20℃から300℃までの温度及び0.0005トルから1atmまでの圧力で光学波長変換層を覆うことを特徴とする請求項11記載の組立基板の製造方法。 12. The method of manufacturing an assembled substrate according to claim 11, wherein the inorganic coating layer covers the optical wavelength conversion layer at a temperature of 20 to 300 [deg.] C. and a pressure of 0.0005 torr to 1 atm. 光学波長変換層に無機バリア層を形成することを特徴とする請求項11記載の組立基板の製造方法。 12. The method for manufacturing an assembly substrate according to claim 11, wherein an inorganic barrier layer is formed on the optical wavelength conversion layer. 光学波長変換層に無機バリア層を形成した後に無機バリア層に有機発光素子を組み立てることを特徴とする請求項14記載の組立基板の製造方法。 The method of manufacturing an assembly substrate according to claim 14, wherein an organic light emitting element is assembled to the inorganic barrier layer after the inorganic barrier layer is formed on the optical wavelength conversion layer. 無機被膜層に無機バリア層を形成することを特徴とする請求項11記載の組立基板の製造方法。 12. The method for manufacturing an assembly substrate according to claim 11, wherein an inorganic barrier layer is formed on the inorganic coating layer. 無機バリア層に500×10−10mから5000×10−10mの厚みがあることを特徴とする請求項16記載の組立基板の製造方法。 The method of manufacturing an assembly substrate according to claim 16, wherein the inorganic barrier layer has a thickness of 500 × 10 −10 m to 5000 × 10 −10 m. 無機バリア層または無機被膜層が多層構造であることを特徴とする請求項16記載の組立基板の製造方法。 The method of manufacturing an assembly substrate according to claim 16, wherein the inorganic barrier layer or the inorganic coating layer has a multilayer structure. 無機被膜層が酸化ケイ素、窒化ケイ素、酸窒化ケイ素、炭化ケイ素、酸化チタン、窒化チタン、酸化ジルコニウム、窒化ジルコニウム、酸化アルミニウム、窒化アルミニウム、酸化スズ、酸化インジウム、酸化鉛、酸化ホウ素、酸化カルシウム、SiOxCiHj、SiNyCiHj、SiOxNyCiHjを含むグループから選ばれた材料によって生成されていることを特徴とする請求項11記載の組立基板の製造方法。 Inorganic coating layer is silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, titanium oxide, titanium nitride, zirconium oxide, zirconium nitride, aluminum oxide, aluminum nitride, tin oxide, indium oxide, lead oxide, boron oxide, calcium oxide, 12. The method of manufacturing an assembly substrate according to claim 11, wherein the assembly substrate is made of a material selected from a group including SiOxCiHj, SiNyCiHj, and SiOxNyCiHj. 光学波長変換層を無機被膜層で覆った後に平坦化処理があることを特徴とする請求項11記載の組立基板の製造方法。 12. The method for manufacturing an assembly substrate according to claim 11, wherein the optical wavelength conversion layer is flattened after being covered with an inorganic coating layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015062197A (en) * 2007-06-28 2015-04-02 株式会社半導体エネルギー研究所 Light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015062197A (en) * 2007-06-28 2015-04-02 株式会社半導体エネルギー研究所 Light-emitting device

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