JP2007059751A - Imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small imaging device that not only suppresses image quality deterioration for filler scattering or drop, but also increases the selection of adhesives for improving flexible design. <P>SOLUTION: An imaging device 1 comprises a semiconductor image pickup device 5 for converting incident light into an electric signal, an image formation optical system for guiding the incident light to the semiconductor image pickup device 5, and a holding material 2 for holding the semiconductor image pickup device 5 and image formation optical system components. The diameter of each filler contained in the adhesives 6, 6A and 6B for adhering the semiconductor image pickup device 5, a lens 3 and an optical filter 4 to the holding material 2 varies depending on a distance from the semiconductor image pickup device 5. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a compact image pickup apparatus using a semiconductor image pickup device and a mobile phone device using the same.

  Conventionally, as described in Patent Document 1, there has been known an imaging apparatus configured to convert light incident through a lens into an electrical signal using a semiconductor imaging element such as a CCD and to extract an image. . With the demand for miniaturization and high performance of portable devices, there has been a further demand for smaller and lighter imaging devices. For this reason, thinning of the imaging device has been realized by thinning each component. On the other hand, as the number of pixels has increased with the demand for high image quality, the pixel size has also been reduced.

  In an imaging apparatus, a black spot or a white spot of an image generated by a defect in the imaging element or dust attached to the imaging element is commonly called “scratch”. Conventionally, in assembling an image pickup apparatus, improvement of the cleanliness of the work environment, strengthening of washing, static electricity removal by an ionizer and the like have been performed so as to prevent dust from being attached to the image pickup element. Also, if the output from a pixel is reduced due to dust or the like, the output of the pixel is estimated based on information obtained from surrounding pixels, and it is corrected as if the pixel is operating normally. Scratch correction was performed.

In Patent Document 2, the size of the adhesive used when fixing or sealing the semiconductor imaging device and the size of the filler used for the sealing agent are determined according to the pixel size so as not to affect the image quality. The use of these fillers is disclosed.
JP 2001-245186 A (5th page, FIG. 2) JP 2004-327914 A (page 7, FIG. 6)

  In the imaging device described in Patent Document 2 described above, by setting the diameter of the filler of the adhesive that adheres and holds the optical filter to be equal to or smaller than the pixel size of the semiconductor imaging device, the filler is dropped from the adhesive and the semiconductor imaging is performed. Even if it adheres to the element, the image quality can be prevented from deteriorating.

  In view of the above background, an object of the present invention is to provide a small-sized imaging device that can reduce image quality deterioration due to scattering and dropping of fillers, increase the choice of adhesive, and increase the degree of design freedom.

  An imaging apparatus according to the present invention includes a semiconductor imaging device that converts incident light into an electrical signal, a plurality of optical components that form an imaging optical system that guides incident light to the semiconductor imaging device, the semiconductor imaging device, and the optical component An adhesive used for adhering the semiconductor imaging element and the optical component to the holding member, and a position of the filler in which the diameter of the filler contained is used, and the semiconductor imaging element. Different configurations depending on the distance between the two.

  With this configuration, since the diameter of the filler contained in the adhesive can be determined according to the distance from the semiconductor image sensor, image quality deterioration due to the dropout of the filler can be reduced and the degree of freedom in selecting the adhesive can be increased. . For example, the adhesive filler diameter is selected so that the thermal expansion coefficient is low for the bonding of the semiconductor imaging device, and the adhesive filler is selected so that the strength is high for the bonding of the imaging optical system member. The adhesive can be selected depending on the place of use, such as selecting the diameter, and image quality degradation can be reduced by controlling the filler that reaches the surface of the semiconductor imaging device.

  The imaging device of the present invention may employ a three-dimensional substrate as the holding member.

  With this configuration, each component of the imaging device can be attached to the three-dimensional substrate, so that the workability during assembly is improved. Moreover, since each component can be attached on the basis of a three-dimensional board | substrate, it can assemble with sufficient precision of an imaging device.

  In the image pickup apparatus of the present invention, the adhesive used for bonding the optical component located at a position close to the semiconductor image pickup device is more of the filler than the adhesive used for the adhesive of the optical component located far from the semiconductor image pickup device. The diameter is small.

  With this configuration, since the filler contained in the adhesive located near the semiconductor image sensor is small, it is possible to reduce image quality degradation when the filler adheres to the surface of the semiconductor image sensor due to scattering of the filler. Further, even if the filler contained in the adhesive used at a position distant from the semiconductor image sensor is increased, the possibility that the filler adheres to the surface of the semiconductor image sensor is small, and the influence on the image quality of the image sensor is small. Therefore, it is possible to increase the degree of freedom in selecting an adhesive while reducing image quality deterioration caused by filler dropping or scattering.

  In the imaging apparatus according to the aspect of the invention, the diameter of the filler may be larger than the pixel pitch of the semiconductor imaging element.

  With this configuration, the degree of freedom in selecting the linear expansion coefficient and strength of the adhesive can be increased.

  In the imaging apparatus of the present invention, the imaging optical system has a configuration including an aspheric lens.

  With this configuration, various aberrations including spherical aberration can be corrected, and a good image can be obtained even with a small size.

  An image pickup apparatus manufacturing method according to the present invention includes a step of bonding a semiconductor image pickup element to a holding member with an adhesive, and an imaging optical system that guides incident light to the semiconductor after the semiconductor image pickup element is bonded to the holding member. And a plurality of steps of adhering each of the plurality of optical components to the holding member in order from the side closest to the semiconductor imaging element, and using an adhesive having a larger filler diameter as it becomes a later step .

  According to this method, the semiconductor image sensor having a large influence on the image quality due to the filler is first mounted, and then the optical components are bonded in order from the side closest to the semiconductor image sensor. The optical component close to the semiconductor image sensor is bonded with an adhesive containing a filler having a small diameter, and the optical component is bonded with an adhesive containing a large filler as the distance from the semiconductor image sensor is reduced, thereby reducing image deterioration and adhesive. Can increase the degree of freedom of selection.

  A cellular phone device of the present invention has a configuration including the imaging device described above or an imaging device manufactured by the manufacturing method described above.

  With this configuration, it is possible to use an imaging device in which image quality deterioration due to filler dropping or the like is reduced, so that high quality image quality can be obtained and the quality of the mobile phone device can be improved.

  According to the present invention, since the diameter of the filler contained in the adhesive can be determined according to the distance from the semiconductor imaging device, it is possible to increase the degree of freedom in selecting the adhesive while reducing image quality degradation. It has the effect.

  Hereinafter, an imaging apparatus according to an embodiment of the present invention will be described with reference to the drawings. When possible, the same portions are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a cross-sectional view of an imaging apparatus 1 according to the embodiment, FIG. 2 is a perspective view showing the imaging apparatus 1, and FIG. 3 is an exploded perspective view of a main part of the imaging apparatus 1 shown in FIG. As shown in FIG. 1, the imaging apparatus 1 according to the embodiment includes an aspherical lens 3, an optical filter 4, and a semiconductor imaging element 5 arranged along the optical axis L, and a three-dimensional substrate 2 that holds them. And a printed circuit board (FPC) 10 connected to the three-dimensional board 2. In the present embodiment, the three-dimensional substrate 2 has a role of fixing the semiconductor imaging device 5 and also serves as a holding member that holds the optical filter 4. The three-dimensional substrate 2 includes a cylindrical lens barrel portion 2a and a bottom portion 2b continuous with one end surface of the lens barrel portion 2a (see also FIG. 2). In the following description, the lens barrel 2a side is the upward direction, and the bottom 2b side is the downward direction.

  First, the three-dimensional substrate 2 will be described. The lens barrel 2a is located on the upper surface of the bottom 2b and extends in the vertical direction. The bottom 2b has a recess formed in the center of its lower surface. In addition, an opening A centered on the optical axis L is formed in the bottom 2b, and light can pass through the opening A and the hollow portion of the lens barrel 2a. A portion 8 surrounding the opening A of the three-dimensional substrate 2 is made of glass reinforced PPA (polyphthalamide resin) or the like, and is black to prevent light transmission. A necessary wiring pattern 9b is formed on the bottom surface of the bottom 2b by electroless plating or the like. This wiring pattern 9b is provided outside the bottom 2b of the three-dimensional board 2 for connection to the connection land 9c provided on the bottom surface of the bottom 2b of the three-dimensional board 2 so that the semiconductor imaging device 5 can be barely mounted. Terminal portion 9a (see FIG. 2).

  The aspherical lens (hereinafter referred to as “lens”) 3 is made of a resin that can satisfy necessary optical characteristics such as transmittance and refractive index. In the present embodiment, ZEONEX (registered trademark) manufactured by ZEON is used for the lens 3. Although only one lens is shown in FIG. 1 for simplicity, the lens 3 is actually composed of two lenses, and has a so-called pan focus configuration in which an object farther than a certain distance can be imaged. . Here, the lens 3 is focused on a subject farther than about 30 cm. The configuration and characteristics of the lens 3 are not limited to those in the present embodiment, and can be selected as appropriate. The lens 3 is fitted on and fixed to the inner periphery of the lens barrel 2a of the three-dimensional substrate 2. Above the lens 3, a lens 7 is fixed and a diaphragm 7 serving as a required opening is attached, and the lens 3 is bonded and fixed to the lens barrel portion 2 a with an adhesive 6 </ b> B below the lens 3.

  The adhesive 6B is a UV / heat combination type one-component epoxy adhesive. The size of the filler contained in the adhesive 6B is about 5 μm.

The optical filter 4 has an IR (Infra Red) cut coat on one side of a substrate made of shelf silicate glass and an anti-reflection AR (Anti Reflection) coat on the other side. For example, silicon dioxide (SiO ₂ ), titanium oxide (TiO ₂ ), or the like is used for the IR cut coat, and is deposited on the substrate. For the AR coating for preventing reflection, for example, aluminum oxide (Al ₂ O ₃ ), magnesium fluoride (MgF ₂ ), zirconium oxide (ZrO ₂ ) or the like is used, and is deposited on the base material. By using shelf silicate glass as the substrate, the optical filter 4 can suppress the transmission of ultraviolet light. With such a configuration, the optical filter 4 suppresses transmission of light outside the visible light region.

  FIG. 4 is a diagram showing the spectral characteristics of the optical filter 4 according to the present embodiment. As can be seen from FIG. 4, the optical filter 4 has a transmittance of about 93% or more from about 400 nm to about 800 nm, and a sufficiently low transmittance in the other bands. The spectral characteristics of the optical filter 4 are not limited to those in the present embodiment, and can be changed as appropriate. The optical filter 4 is disposed above the opening A along the optical axis L, and is fixed to the three-dimensional substrate 2 by a UV curable adhesive 6 made of epoxy resin. The optical filter 4 has an AR-coated surface facing the lens 3. The adhesive 6 contains a filler for improving its properties. The size of the filler contained in the adhesive 6 is an adhesive of about 3.2 μm.

  The semiconductor image pickup device 5 is a 1/4 inch SXGA type CCD having about 1 million pixels and has a pixel size of about 2.8 μm. The semiconductor image pickup device 5 is so-called face-down mounted on a connection land 9c provided on the three-dimensional board 2 by a connection method such as SBB (Stud Bump Bond), and is electrically connected to the wiring pattern 9b. The semiconductor image pickup device 5 uses color filters (not shown in FIGS. 1 to 3) so that RGB signal outputs can be obtained, and a light receiving portion is formed corresponding to each color filter. The semiconductor imaging device 5 is fixed to the three-dimensional substrate 2 with an adhesive 6A. The adhesive 6 </ b> A has an effect of being reliably connected by the SBB via a conductive paste interposed between the wiring pattern 9 b and a function of sealing a PAD portion (not shown). The filler contained in the adhesive 6A has a diameter of about 3 μm. The adhesive 6A is different from the above-described adhesive 6 including sealing characteristics.

  FIG. 5 is a schematic diagram illustrating an example of a color arrangement in the semiconductor image sensor 5. In FIG. 5, for example, a portion indicated by “R” receives light having a red wavelength transmitted through the color filter, and thus a portion indicated by “R” can detect light having a red wavelength. Similarly, a portion indicated by “B” receives light of blue wavelength transmitted through the color filter, and a portion indicated by “G” receives light of green wavelength transmitted through the color filter. The semiconductor imaging device 5 is disposed so that the imaging surface (incident surface) faces the optical filter 4 and covers the opening A near the center of the bottom surface of the bottom 2b. As described above, since the recess is formed in the center of the bottom 2b, the semiconductor image pickup device 5 attached to the lower surface is separated from the FPC 10. In addition, chip parts (not shown) are also arranged on the bottom surface of the bottom 2b.

  From the above description, in the optical system of the imaging device 1 in the present embodiment, the light from the subject is collected by the lens 3 and enters the semiconductor imaging device 5 through the optical filter 4 that transmits the light in the visible light region. It can be seen that it is configured to.

  The FPC 10 provided below the three-dimensional substrate 2 includes a polyimide base film 10a having a thickness of 1/2 Mil (12.5 μm) and a rolled copper 10b having a thickness of 1/3 Oz (12 μm). The FPC 10 is provided with a signal processing DSP (Digital Signal Processor) not shown. The DSP has a function of converting an electrical signal output from the semiconductor image sensor 5 into a signal of a required format, and processing white balance, color correction, and the like. The land 13 on the FPC 10 is electrically connected to the terminal portion 9a of the three-dimensional board 2 by the solder 12 and is also mechanically fixed. Thereby, the imaging device 1 is connected to devices such as a mobile phone and a mobile terminal (not shown).

  The DSP has a function called “scratch correction”. “Scratch correction” refers to non-output pixels caused by CCD defects and dust, and estimates the output from defective pixels based on information obtained from pixels arranged around the pixels. Thus, the correction is performed as if the pixel is operating normally. As a defect correction method, a method of using an average value of outputs from adjacent pixels, a method of interior using output values from adjacent pixels, or the like can be used. Further, the identification of the scratch is determined by whether the output value from the target pixel in a certain finite range exceeds a certain threshold value or falls below another threshold value.

  The imaging apparatus 1 operates as follows. Light from the subject passes through the aperture 7 and is collected by the lens 3. Subsequently, the light collected by the lens 3 enters the optical filter 4, and infrared light and ultraviolet light are cut by the optical filter 4. Visible light that has passed through the optical filter 4 enters the semiconductor imaging device 5 and is converted into a required electrical signal, and the converted electrical signal is output from the semiconductor imaging device 5. Then, the electrical signal output from the semiconductor image sensor 5 is led to the terminal portion 9a provided on the bottom portion 2b via the wiring pattern 9b, and a captured image is displayed on a display (not shown). The display has an aspect ratio of 4: 3 and is configured to output at a frame rate of 30 frames / second.

  FIG. 6 is a diagram illustrating an assembly sequence of the imaging apparatus 1 according to the embodiment. First, the semiconductor imaging device 5 is set on the lower surface of the bottom 2b of the three-dimensional substrate 2 (S10), and the semiconductor imaging device 5 is bonded and sealed with an adhesive 6A (S12, S14). At this time, the semiconductor image sensor 5 is arranged so that the imaging surface corresponds to the opening A. The adhesive 6A is cured and cured by an ultraviolet irradiation device (not shown). It is desirable to optimize the wavelength of ultraviolet rays to be irradiated, the irradiation time, and the like according to the curing state of the adhesive 6A. In the case of using an adhesive formulated so that heat curing can be performed for UV curing, the curing initiator is activated by irradiating ultraviolet rays, and then heated to complete the curing.

  Next, after the optical filter 4 is set on the three-dimensional substrate 2, a required amount of a UV curable epoxy adhesive 6 is applied around the optical filter 4 with a dispenser or the like. Similarly to the adhesive 6A, the adhesive 6 is cured by curing the adhesive 6 using an ultraviolet irradiation device (S16). Subsequently, the lens 3 is mounted on the three-dimensional substrate 2 above the optical filter 4, and the lens 3 is adhered to the lens barrel portion 2a of the three-dimensional substrate 2 by the adhesive 6B, and cured and cured in the same manner as the adhesive 6A. A diaphragm 7 for holding the lens 3 from above is attached to fix the lens 3 (S18). Finally, the three-dimensional substrate 2 to which the optical filter 4 and the semiconductor image pickup device 5 are attached is mounted on the FPC 10 and both are fixed by the solder 12 to complete the image pickup apparatus 1.

Here, an adhesive 6 </ b> A for bonding the semiconductor imaging device 5 to the three-dimensional substrate 2 will be described. As described above, glass reinforced PPA (polyphthalamide resin) is used for the three-dimensional substrate 2, and the linear expansion coefficient thereof is about 25 × 10 ⁻⁶ / K. On the other hand, the linear expansion coefficient of the semiconductor imaging element 5 is about 2.3 × 10 ⁻⁸ / K. In order to appropriately fix both of them, the adhesive 6A contains a filler (not shown). The filler causes the linear expansion coefficient of the adhesive 6 </ b> A to be a value between the linear expansion coefficient of the three-dimensional substrate 2 and the linear expansion coefficient of the semiconductor imaging device 5. The filler is made of silicon dioxide (SiO ₂ ) so as to be suitable for optics. It is preferable to use a spherical filler so as not to have anisotropy after the adhesive 6A is cured.

  A filler having a diameter of 3 μm is used. About the content rate of a filler, it is possible to select suitably, considering the above-mentioned thermal expansion coefficient. The adhesive 6A greatly contributes to the reliability in the connection method by SBB, and therefore it is desirable to sufficiently examine and evaluate the adhesive 6A.

  Next, the adhesive 6 for bonding the optical filter 4 to the three-dimensional substrate 2 will be described. Regarding the adhesion of the optical filter 4, unlike the case of the semiconductor imaging device 5, the sealing action is not particularly required, so the linear expansion coefficient and the strength are mainly selected. The size of the filler is 3.2 μm, which is larger than the filler of the semiconductor image sensor 5. As for the filler, silicon dioxide is used so as to be suitable for optical use as in the case of the semiconductor imaging device 5.

  Next, an adhesive 6B for bonding the lens 3 to the three-dimensional substrate 2 will be described. In this case, since both the lens 3 and the three-dimensional substrate 2 are made of resin, the linear expansion coefficient is close, so the strength is mainly selected. Although the size of the filler is 5 μm, the content is reduced because the expansion coefficient is closer to the base material than the adhesive compared to the case of the semiconductor imaging device 5 and the optical filter 4 described above.

  Prior to explaining the size of the filler, problems caused by the adhesive containing the filler will be described. When the adhesive is cured, the filler contained in the adhesive may be scattered, or part of the filler may be exposed particularly at the end face portion. Further, after the image pickup device 5 is attached to the three-dimensional substrate 2, the optical filter 4 and the lens 3 of the optical system are attached, the FPC 10 is mounted, and a focus adjustment process is performed if necessary. The filler in the part may fall off. It is clear from the analysis of the imaging apparatus 1 that the scattered and dropped fillers adhere to the surface of the imaging element 5 or get on the optical filter 4 to reduce the output from the pixels. Became. Particularly recently, with the downsizing of imaging devices, it has become difficult to ensure the dimensions of parts necessary for device disassembly, and many devices cannot be disassembled. In such an imaging apparatus, when the scattered and dropped filler adheres to the surface of the imaging element 5 and the optical filter 4, there has been a situation in which the imaging apparatus has to be discarded.

  One cause of scratches that cannot be corrected is fillers that fall off and scatter from the adhesive. The analysis and analysis of the imaging device revealed that the adhesive used at a position closer to the semiconductor imaging element 5 has a greater influence than the adhesive used at a position farther than the semiconductor imaging element 5. In other words, even if the adhesive contains the same size of filler, the influence on the image quality is small as the position where the adhesive is used moves away from the semiconductor image sensor, such as the image sensor surface, optical filter upper surface, and lens surface. I understand.

  In the imaging device 1 according to the present embodiment, the diameter of the filler contained in the adhesive is 3 μm, 3.2 μm, and 5 μm, and increases as the distance from the imaging element increases. In this embodiment, a filler larger than the pixel size is used. As a result, an image pickup apparatus with reduced image quality deterioration can be realized, and an adhesive having a large filler diameter can be used particularly at a position away from the semiconductor image pickup element 5, thereby increasing the degree of freedom in selecting an adhesive. it can.

  In addition, according to the present embodiment, a black spot or the like of an image that may be caused by a filler is corrected by using a function (scratch correction function) that corrects a defect caused by a CCD defect or the like that has conventionally been provided in an imaging apparatus. It is not necessary to change processes, construction methods, equipment, etc. That is, it is possible to reduce image quality deterioration due to the dropout of the filler without reducing the workability of assembling the imaging device.

  Next, the image pickup apparatus according to the present embodiment and the image pickup apparatus manufactured by the method for manufacturing the image pickup apparatus were mounted on a mobile phone, and a drop test was performed. An experiment was conducted in which a mobile phone was dropped 10 times on a concrete floor from a height of about 1.5 m to examine changes in image quality. The image pickup apparatus was dropped so that the optical axis direction L in FIG. 1 was on the lower side. That is, it was dropped on the concrete floor so that the upper side (lens side) described in FIG. As a result of the test, it was not possible to confirm deterioration (occurrence of scratches) that had a substantial effect on the photographed image quality before and after the ten drops. From this result, it was found that the image that can be generated due to the drop-off of the filler is at least a range that can be corrected by scratch correction, and the quality of the mobile phone can be ensured.

  FIG. 7 is a diagram illustrating the relationship between the distance from the semiconductor image sensor and the size of the filler that affects the image. This graph was created based on the experimental results. The horizontal axis indicates the distance from the semiconductor image sensor. The distance corresponding to each component of the semiconductor imaging device 5, the optical filter 4, and the aspherical lens 3 which are main components of the imaging apparatus is taken. The vertical axis represents the size of the filler (filler size) in which image quality degradation has occurred. In the present embodiment, the size of the filler is defined by the diameter of the filler. The dotted line in the graph indicates the size of the filler that has deteriorated the image quality when the above-described scratch correction is performed, and the solid line when the scratch correction is not performed. As is apparent from the graph, it can be seen that image quality deterioration is suppressed by the flaw correction. Further, it can be understood that the size of the filler that causes the deterioration of the image quality varies depending on the distance from the semiconductor imaging element 5 regardless of the presence or absence of the defect correction. That is, as the distance from the semiconductor imaging element 5 increases, the image quality deterioration does not occur unless the filler is large. Therefore, according to the present invention, it is possible to vary the size of the filler depending on the distance from the semiconductor image pickup device 5, and it is possible to expand the degree of freedom in selecting the adhesive.

  Although the imaging device of the present invention has been described in detail with reference to the embodiment, the present invention is not limited to the above embodiment.

  As described above, the present invention has an excellent effect that the degree of freedom in selecting an adhesive can be increased, and is useful as a small-sized image pickup device using a semiconductor image pickup device and a mobile phone using the same. It is.

Sectional drawing which shows the imaging device which concerns on embodiment The perspective view which shows the imaging device which concerns on embodiment 1 is an exploded perspective view of a main part of an imaging apparatus according to an embodiment. The figure which shows the spectral characteristic of the optical filter which concerns on embodiment Schematic diagram of pixel color arrangement in CCD according to the embodiment The figure which shows the assembly flow of the imaging device which concerns on embodiment The figure which shows the characteristic of the image quality degradation experiment of the imaging device which concerns on embodiment

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Imaging device 2 Three-dimensional board | substrate 2a Lens barrel part 2b Bottom part 3 Aspherical lens 4 Optical filter 5 Semiconductor image pick-up element 6, 6A, 6B Adhesive 7 Diaphragm 10 FPC

Claims (8)

A semiconductor imaging device for converting incident light into an electrical signal;
A plurality of optical components constituting an imaging optical system for guiding incident light to the semiconductor imaging device;
A holding member for holding the semiconductor imaging device and the optical component;
With
The adhesive used for adhering the semiconductor imaging device and the optical component to the holding member is different in that the diameter of the filler contained depends on the distance between the position where the adhesive is used and the semiconductor imaging device. An imaging device that is characterized.   The imaging apparatus according to claim 1, wherein the holding member is a three-dimensional substrate.   An adhesive used for bonding an optical component located near the semiconductor imaging device has a smaller diameter of the filler than an adhesive used for an optical component located far from the semiconductor imaging device. The imaging device according to claim 1 or 2.   The imaging apparatus according to claim 1, wherein a diameter of the filler is larger than a pixel pitch of the semiconductor imaging element.   The imaging apparatus according to claim 1, wherein the imaging optical system includes an aspheric lens as the optical component.   A mobile phone device comprising the imaging device according to claim 1. Bonding the semiconductor imaging element to the holding member with an adhesive;
After bonding the semiconductor imaging element to the holding member, the plurality of optical components constituting the imaging optical system that guides incident light to the semiconductor are bonded to the holding member in order from the side closer to the semiconductor imaging element. A plurality of processes to be bonded by,
With
A method of manufacturing an imaging device, wherein an adhesive having a large filler diameter is used in accordance with a later step. A mobile phone device comprising an imaging device manufactured by the method for manufacturing an imaging device according to claim 7.

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