JP2007044693A - Washing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To increase a cleaning effect in a washing section which removes particles such as polishing waste sticking to the front/rear faces of a substrate after processing such as CMP treatments. <P>SOLUTION: A substrate processing device 100 is a device that performs washing processing on a wafer W, and sequentially transports the wafers W which undergoes CMP treatments by a CMP device 200 to a plurality of processing sections 30, 40, 50 for washing them. The wafer W is held at a holding roller 80 (a to c) of holding hands 35a, 35b in the processing section 30. A peripheral edge washing means 90 is disposed at a washing position under by an elevating drive means 94. The front/rear faces of the wafer W rotated by the rotation of the roller 80 (a to c) are washed by a double-face washing device 34, and the peripheral edge is simultaneously pressed against a side of a brush bristle 922 in a peripheral edge washing means 90 and its lower face and end face are washed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a cleaning apparatus that performs a predetermined cleaning process on a substrate which is a thin plate-like object such as a semiconductor wafer, a glass substrate for liquid crystal display, and a glass substrate for photomask. In particular, the present invention relates to a substrate cleaning apparatus that can efficiently clean the edge of the substrate.

  Conventionally, in the process of processing a wafer, which is a type of substrate, the surface of the wafer is mechanically removed using a chemical abrasive (slurry), pad, etc., in order to remove irregularities associated with the multilayer structure formed on the surface of the wafer. Then, a CMP (Chemical Mechanical Polishing) process is performed to flatten the surface of the wafer.

  Since polishing scraps and the like are adhered to the surface of the wafer (hereinafter simply referred to as a substrate) that has been subjected to CMP (chemical mechanical polishing) by polishing, the substrate is cleaned as polishing for the substrate after the CMP processing. Etc. are removed.

  This CMP cleaning is post-processing cleaning for removing slurry that contaminates the substrate surface in the CMP, and brush scrub cleaning is generally employed as described below.

  A conceptual configuration of the prior art for cleaning the substrate as described above is shown in FIGS. That is, the support of the substrate W is achieved by sandwiching the end surface of the substrate W between the pair of end surface support hands 210 and 211. Then, the upper surface of the substrate W is scrubbed and cleaned by a scrub cleaning member 216 including a disc-shaped base portion 212 and a cleaning brush 214 fixed to the lower surface of the base portion 212. That is, the scrub cleaning member 216 is rotated by a rotation drive mechanism (not shown) and the nozzle 220 disposed at the substantially center of the cleaning brush 214 with the contact surface 218 of the cleaning brush 214 in contact with the upper surface of the substrate W. The cleaning liquid is discharged, and the upper surface of the substrate W is scrubbed.

  Similarly, the lower surface of the substrate W has a scrub cleaning member 217 including a disk-shaped base portion 213 and a cleaning brush 215 fixed on the upper surface of the substrate W, and the contact surface 219 of the cleaning brush 215 is the surface of the substrate W. While being in contact with the lower surface, the cleaning liquid is discharged from a nozzle 221 that is rotated by a rotation drive mechanism (not shown) and disposed at the substantially center of the cleaning brush 215, and the lower surface of the substrate W is scrubbed.

  In this configuration, the end surface support hands 210 and 211 move the substrate W in a circular motion so that the center OW of the substrate W draws a circular orbit as shown in FIG. 14 while holding the substrate W. As a result, the contact surfaces 218 and 219 come into contact with almost the entire surface of the substrate W, so that almost the entire surface of the substrate W can be scrubbed.

  By the way, in general, the entire surface of the substrate W is not used for forming a semiconductor device. As shown in FIG. 16, only the central portion 233 excluding the peripheral portion 232 including the upper and lower surfaces 230 near the periphery and the end surface 231 is used. Is an effective area used for forming a semiconductor device. Therefore, when a thin film is patterned on the surface of the substrate W, the film quality such as the film thickness and the film hardness differs between the central portion 233 and the peripheral portion 232 of the substrate W. Therefore, originally, it is necessary to change the method of cleaning the central portion 233 of the substrate W and the method of cleaning the peripheral portion 232. For example, it is necessary to remove the slurry remaining in the central portion 233 by changing the type and concentration of the cleaning liquid used, and to remove the slurry remaining in the peripheral portion 232 and unnecessary thin films.

  However, in the configuration of the above prior art, attention is paid only to the effective area of the central portion 233 of the substrate W in the pattern formation for the thin film of the substrate W by the etching process, so that the peripheral portion 232 of the substrate W is insufficiently etched. The region remains and this may be an unnecessary thin film, or the slurry may remain on the peripheral edge 232 of the substrate W.

  If an unnecessary thin film and slurry remain on the peripheral edge 232 of the substrate W, the thin film and the slurry may react with each other, and the resulting material may remain on the peripheral edge 232 of the substrate W. As described above, the configuration of the above-described prior art has a problem that an unnecessary thin film, slurry, or a reaction product between the thin film and the slurry remains on the peripheral edge 232 of the substrate W. In this case, since these substances become particles, the yield in the manufacturing process of the semiconductor device is reduced, which is a serious problem.

  As described above, the degree of cleanliness of the substrate becomes stricter year by year, and contamination of the edge of the substrate cannot be ignored. An apparatus for cleaning the edge has been developed. As an example, Japanese Patent Application Laid-Open No. 11-625 discloses a pair of edge cleaning rollers for rotating the substrate while holding the substrate in place while contacting the end of the substrate. In the edge cleaning roller, a substantially V-shaped circumferential groove is formed in the cleaning elastic member on the surface so that the end of the substrate enters, and the end of the substrate is pressed into the circumferential groove. Therefore, the substrate is cleaned by rubbing the edge of the entire circumference with the elastic member for cleaning of the edge portion cleaning roller while rotating.

  However, in the cleaning apparatus described in the above-mentioned Japanese Patent Application Laid-Open No. 11-625, the peripheral speeds of the edge cleaning roller and the edge cleaning roller are the same because of the configuration in which the substrate is rotationally driven. For this reason, the cleaning elastic member does not generate a cleaning force that sufficiently scrapes off an unnecessary thin film or slurry at the end, and sufficient cleaning cannot be expected.

  Further, the edge cleaning roller is moved and set from the side with respect to the substrate being conveyed. For this reason, there is a problem that the apparatus configuration becomes large in the width direction.

  At this time, the height position of the substrate needs to be accurately positioned. Otherwise, the portion other than the peripheral groove of the edge cleaning roller abuts against the substrate end portion, or is damaged. There is also a problem that the substrate may be dropped from the cleaning roller.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate cleaning apparatus that solves the above technical problems and can reliably remove particle contaminants on the peripheral edge of the substrate. To do.

  In order to solve the above-mentioned problem, the invention according to claim 1 is a cleaning apparatus for processing a thin plate-like object to be processed, and has a cleaning unit having a substantially conical inclined side surface for cleaning an end of the object to be processed. A peripheral edge cleaning means; and a moving means for bringing the peripheral edge cleaning means into contact with an end of the object to be processed. The cleaning portion of the peripheral edge cleaning means is formed by an integrally formed sponge body. The moving means abuts the end of the substrate to be in contact with the inclined side surface formed by the sponge body of the peripheral edge cleaning means, and is pressed by the sponge body to clean the end of the substrate. And

  According to a second aspect of the present invention, in the cleaning apparatus according to the first aspect of the present invention, the cleaning apparatus includes a first rotation driving unit that rotates the peripheral edge cleaning unit.

  According to a third aspect of the present invention, in the cleaning apparatus according to the second aspect, the second rotation driving unit that rotates the object to be processed while holding the peripheral edge of the object to be processed, the first rotation driving unit, It further has a 1st control means which rotates the 2nd rotation drive part in the opposite direction.

  According to a fourth aspect of the present invention, in the cleaning apparatus according to the second aspect, the second rotation driving unit that rotates the object to be processed while holding the peripheral edge of the object to be processed, and the first rotation driving unit, It further has the 1st control means which rotates the 2nd rotation drive part in the same direction, It is characterized by the above-mentioned.

  According to a fifth aspect of the present invention, in the cleaning apparatus according to the fourth aspect, the first rotation driving unit and the second rotation driving unit differ in the peripheral edge cleaning unit and the object to be processed in the same direction. It is characterized by rotating at a rotational speed.

  According to a sixth aspect of the present invention, in the cleaning apparatus according to any one of the first to fifth aspects, the first rotation driving unit has the periphery around an axis perpendicular to the main surface of the object to be processed. The partial cleaning means is rotated.

  The invention according to claim 7 is the cleaning apparatus according to any one of claims 1 to 6, wherein the sponge body is a sponge body of PVA.

  The invention according to claim 8 is the cleaning apparatus according to any one of claims 1 to 7, wherein the object to be processed is a substrate that has been processed to polish the surface on which the thin film is formed. It is characterized by.

  According to invention of Claims 1-8, not only the center part of a to-be-processed object but the peripheral part of a to-be-processed object can be wash | cleaned favorably. In addition, the peripheral portion cleaning means having the inclined side surface in the cleaning portion for cleaning the end portion of the object to be processed is cleaned by bringing it into contact with the inclined side surface of the cleaning portion from the plane side of the object to be processed. It is possible to prevent the end of the processing body from being missed and falling. Further, since the peripheral edge cleaning means can be set only by moving in one direction, it can be configured with fewer drive mechanisms. In addition, since the cleaning unit is configured by an integrally formed sponge body, the peripheral edge of the rotating object to be processed can be more reliably cleaned.

  In particular, according to the second aspect of the present invention, the cleaning device includes a rotation driving unit that rotates the peripheral edge cleaning unit. For this reason, it can wash | clean so that it may rub by the relative movement with respect to the plane part and end surface of the edge part of a to-be-processed object, and all the peripheral parts of the to-be-processed object to rotate can be wash | cleaned reliably.

  In particular, according to the eighth aspect of the present invention, even if the object to be processed is a substrate that has been processed to polish the surface on which the thin film is formed, the entire peripheral portion can be more reliably cleaned. Note that the processing here may be a polishing process such as a CMP process for polishing the surface of the substrate on which the thin film is formed.

  Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described with reference to the drawings.

  FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view in the YZ plane of the substrate processing apparatus according to the embodiment of the present invention. Furthermore, FIG. 3 is a schematic sectional view in the ZX plane of the substrate processing according to the embodiment of the present invention.

  In this substrate processing apparatus 100, a pod (POD) 9 that stores a plurality of wafers W, which is a kind of substrate, is used as a container, and a plurality of wafers W to be subjected to CMP processing are sealed in the pod 9. Arranged in the substrate storage unit 7. In the substrate storage portion 7, a plurality of pods 9 are arranged in a row in the X-axis direction. A wafer cassette may be used instead of the pod 9.

  A plurality of processing units 30, 40, and 50 are provided with a conveyance path 15 provided along the X-axis direction between the substrate storage unit 7 and the substrate storage unit 7. These processing units 30, 40, 50 are also arranged in a line along the X-axis direction, and are provided adjacent to each other according to the processing procedure for the wafer W.

  As will be described in detail later, the processing unit 30 disposed on one end side of the plurality of processing units is a wafer with the holding device 33 supporting the wafer W immediately after the CMP processing is completed, as shown in FIG. By brushing both surfaces of the wafer W using a front surface brush 31 that contacts the surface of the wafer W to clean the surface of the wafer W and a back surface brush 32 that contacts the back surface of the wafer W and cleans the back surface of the wafer W , A processing unit that performs processing to remove particles such as polishing dust adhering to the wafer W by CMP processing.

  In the processing unit 30, in order to enhance the cleaning effect of the front surface brush 31 and the back surface brush 32, a predetermined processing solution such as an alkaline solution is supplied to the front and back surfaces of the wafer W by a nozzle (not shown). Further, a known reversing device 3 for reversing the wafer W held by the holding device 33 so that the back surface thereof is an upper surface is disposed in the vicinity of the holding device 33. The processing unit 30 corresponds to the cleaning device of the present invention.

  The processing unit 40 is a processing unit (surface processing unit) that removes fine particles adhering to the surface of the wafer W using a brush 41 having a higher particle removal capability. In the processing unit 40, in order to enhance the cleaning effect by the brush 41, a predetermined processing liquid can be discharged from the nozzle 43 to the surface of the wafer W, and the rotating unit 42 rotates while holding the wafer W. Is also possible.

  Further, among the plurality of processing units, the processing unit 50 disposed on the other end side is placed in a state where the wafer W can rotate on the rotating unit 52, and pure water or the like is made from the nozzle 53 while rotating the wafer W. By performing a final rinse on the wafer W by discharging the rinse liquid toward the surface of the wafer W, the discharge of the rinse liquid is stopped and the wafer W is rotated at high speed to perform spin dry drying ( Rinse treatment / drying treatment section).

  Note that a fan filter unit FFU is provided above the transport path 15 and the processing units 30, 40, 50 and the like in order to keep the atmosphere inside the substrate processing apparatus 100 clean. A down flow of clean air is formed from the fan filter unit FFU toward the transport path 15 and the processing units 30, 40, 50, and the like.

  In this substrate processing apparatus 100, as shown in FIG. 1, a portion adjacent to the processing unit 30 in the X-axis direction is configured as an interface portion with the CMP apparatus 200, and a placement unit 20 is provided in this portion. Yes. As shown in FIG. 3, the mounting unit 20 has two transfer positions La and Lb in the vertical direction as positions where the wafer W can be transferred to and from the transfer unit 210 provided in the CMP apparatus 200. Is set.

  The delivery position Lb is a position where the wafer W is temporarily placed when the wafer W is delivered to the CMP apparatus 200. Then, a transfer arm (not shown) of the transfer unit 210 of the CMP apparatus 200 accesses the transfer position Lb of the mounting unit 20, and this transfer arm transfers the wafer W to the CMP apparatus 200 side. A predetermined polishing process is performed in step.

  The delivery position La is a position where the wafer W is temporarily placed when the transfer arm of the transfer unit 210 of the CMP apparatus 200 transfers the wafer W after the CMP process to the substrate processing apparatus 100. The transfer arm of the transfer unit 210 of the CMP apparatus 200 accesses the delivery position La of the mounting unit 20 and places the wafer W on which the CMP process has been completed.

  The transfer path 15 provided between the processing units 30, 40, 50 and the like and the placement unit 20 and the substrate storage unit 7 is provided with a transfer robot 10 that can move along the X-axis direction. Yes. The transfer robot 10 includes two transfer arms 11 in the vertical direction, and transfers the wafer W while the transfer arm 11 holds the wafer W. As shown in FIG. 2, a ball screw 13 provided in the X-axis direction is screwed into the base portion 14, and the transfer robot 10 moves along the X-axis direction by rotating the ball screw 13. It is possible. Further, the transfer robot 10 can transfer the wafer W in the Z-axis direction (vertical direction) as the elevating part 12 expands and contracts, and can also rotate around the θ-axis. Yes. Therefore, the transfer arm 11 of the transfer robot 10 can access the plurality of pods 9, the wafer placement unit 20, and the processing unit 50 arranged in the substrate storage unit 7, and the wafers are connected between these processing units. W is transported.

  Here, when the transfer arm 11 of the transfer robot 10 accesses the pod 9, it is necessary to open the sealed pod 9 to make the transfer arm 11 accessible. Therefore, the substrate processing apparatus 100 is provided with a pod opener 8 at each position where the pod 9 is placed. When the pod 9 is disposed in the substrate storage portion 7 as in the state indicated by the reference numeral 8a shown in FIG. 2, the pod opener 8 extends the arm to unlock the lid of the pod 9. Then, as in the state indicated by reference numeral 8b shown in FIG. 2, the arm moves in the Y-axis direction while holding the lid of the pod 9 to release the pod 9 from the sealed state. Since the transfer arm 11 of the transfer robot 10 cannot access the inside of the pod 9 in the state of the reference numeral 8b, the pod opener 9 has the arm holding the lid as in the state of 8c shown in FIG. Lower.

  By such an operation, the sealed state of the pod 9 is released, and the transfer arm 11 of the transfer robot 10 can access the wafer W in the pod 9. The pod 9 is sealed so as not to contaminate the wafer W by keeping the wafer W in a clean atmosphere isolated from the outside air. However, the inside of the substrate processing apparatus 100 is similar to the inside of the pod 9. It is configured to maintain a clean atmosphere, and the opening operation of the pod 9 opens the lid inside the substrate processing apparatus 100, so there is no problem of contaminating the wafer W.

  In the transfer robot 10, the transfer arm 11 extends toward the inside of the pod 9, and one wafer W is taken out from the inside of the pod 9. The transfer robot 10 moves in the X-axis direction and the Z-axis direction, and rotates about the θ-axis. The transfer arm 11 transfers the wafer W taken out from the pod 9 to the delivery position Lb of the placement unit 20. Placed on. Further, the transfer arm 11 of the transfer robot 10 accesses the processing unit 50 and takes out the wafer W for which all the processes are completed. The transfer robot 10 moves in the X-axis direction and Z-axis direction, and rotates about the θ-axis. The transfer arm 11 accesses a predetermined position of the pod 9 to perform cleaning after the CMP process. The processed wafer W is stored in the pod 9.

  Further, in this substrate processing apparatus 100, the wafer W after the CMP process placed on the placement unit 20 is transferred to the processing unit 30, and the wafer W that has been processed in the processing unit 30 is transferred to the processing unit 40. A shuttle transfer robot 60 is provided to transfer the wafer W that has been processed by the processing unit 40 to the processing unit 50. As will be described later, the shuttle transfer robot 60 is movable along the X-axis direction, and the wafer W placed at the substrate transfer position La is transferred to the processing unit 30 and the processing in the processing unit 30 is completed. Since the processed wafer W is transferred to the processing unit 40, and the wafer W that has been processed in the processing unit 40 is transferred to the processing unit 50, the transfer operation between the processing units is performed simultaneously.

  As described above, in the substrate processing apparatus 100, the transfer robot 10 performs the transfer operation of the wafer W from the pod 9 to the mounting unit 20, and the shuttle transfer robot 60 performs the processing units 30, 40, 50 from the mounting unit 20. The wafer W is transferred to the wafer. The transfer robot 10 is again responsible for transferring the wafer W from the processing unit 50 to the pod 9.

  Further, the substrate processing apparatus 100 is provided with a cover 70 that can be moved up and down so that processing liquids and the like used in processing in the processing units 30, 40, and 50 are not scattered outside the processing unit. The cover 70 is lifted by a lifting / lowering drive mechanism such as a cylinder or a motor (not shown) when the wafer W is transferred between the processing units by the shuttle transfer robot 60, and extends along the X-axis direction of the shuttle transfer robot 60. When the shuttle transport robot 60 finishes the transport between the processing units and performs the cleaning process in each processing unit, the cover 70 is lowered by the lifting drive mechanism, and each processing unit Cover side surfaces of 30, 40, 50, and the like. Therefore, when processing is performed on the wafer W in each processing unit, it is possible to perform clean processing without the processing liquid or particles from other processing units adhering.

  The overall configuration of the substrate processing apparatus 100 is as described above, and a plurality of processing units 30, 40, and 50 for processing the wafer W are arranged in a row so as to be adjacent along the X-axis direction. In addition, since the wafer W is transferred between the processing units by the single shuttle transfer robot 60, the footprint of the substrate processing apparatus 100 can be reduced. In addition, since the mounting unit 20 can be directly inlined with the CMP apparatus 200 that is an external apparatus, the footprint when the substrate processing apparatus 100 and the CMP apparatus 200 are inlined can also be reduced.

  Next, a detailed configuration of the processing unit 30 will be described. FIG. 4 is a plan view showing a configuration of a cleaning apparatus which is a processing unit according to an embodiment of the present invention. FIG. 5 is a cross-sectional view taken along the line DD of FIG. 4, in which a part is omitted and a part is conceptually shown.

  This apparatus is for removing the slurry and unnecessary thin film remaining on the surface of the wafer W after the CMP process for polishing the thin film formed on the surface of the wafer W is performed, and the side walls 30a, 30b, 30c. , 30d is provided with a holding device 33 that can hold the wafer W horizontally in a substantially rectangular processing chamber 301 in a plan view and can rotate the wafer W in this state.

  Further, the processing unit 30 includes a double-sided cleaning device 34 for scrubbing and removing the slurry remaining on the central portions of the upper and lower surfaces of the wafer W held by the holding device 33, and an end portion of the wafer W. A peripheral portion cleaning means 90 for cleaning the peripheral portion including the lower surface and the end surface, which are one surface to be cleaned, and the reversing device 3 described above are provided.

  The processing chamber 301 includes a processing section 302 above the bottom wall 30e where the wafer W is processed by the bottom wall 30e, and a driving section 303 below which the driving unit such as the holding device 33 is disposed below the bottom wall 30e. The

  The holding device 33 includes a pair of holding hands 35 a and 35 b disposed to face each other in a direction (hereinafter referred to as “holding direction”) A orthogonal to the side wall 30 b or 30 d of the processing chamber 301. Since the holding hands 35a and 35b adopt the same structure in this embodiment and are symmetrical in FIG. 5, only one holding hand 35a will be described below. The other holding hand 35b is given the same reference numeral to the same structure, and the description is omitted.

  As shown in FIGS. 6 and 7, the holding hand 35 a is movable along the holding direction A, and is disposed above the base portion 37 and a base portion 37 attached to the base attaching portion 36. And a main body 39 on which three holding rollers (substrate holders) 80 (ac) for holding the wafer W are disposed.

  One end of a base portion 362 that is long along the holding direction A and extends below the base portion 37 is connected to the base mounting portion 36 via a connecting member 361 fastened to the side wall 30 b. At one end of the base 362, a cylinder 364 is fixed to an upright surface of an L-shaped attachment plate 363, and a rod 364 a of the cylinder 364 is attached to the base portion 37 via a connecting plate 371. The rod 364a can project or retract along the holding direction A. A slide rail 365 is disposed along the holding direction A on the base 362.

  On the other hand, the base portion 37 is configured by arranging a slide portion 372 mounted on the slide rail 365 and a bottom plate 373 on the slide portion 371. A bracket 374 is attached to the bottom surface of the bottom plate 373, and the motor M1 is supported by the bracket 374. A hand shaft 38 is fixed to the upper surface of the bottom plate 373.

  The hand shaft 38 is composed of two cylindrical bodies, and is composed of an outer cylinder 381 that is mounted on the top surface of the bottom plate 373 in accordance with the position of the insertion port 373a of the bottom plate 373, and an inner cylinder 382 that is mounted therein. Is done. The upper portion of the inner cylinder 382 extends to the processing section 302 through the insertion hole 30f of the bottom wall 30e, and the main body 39 is mounted and supported on the upper end of the inner cylinder 382.

  The holding roller 80 on the upper surface of the main body 39 is rotatably provided on the main body 39 so as to rotate the wafer W while holding the wafer W. These holding rollers 80 (ac) are arranged on a circumference corresponding to the end face shape of the wafer W. The wafer W is held in a state in which the end surface is in contact with the side surface of the holding roller 80 (ac). That is, the holding rollers 80 (a to c) are composed of a roller shaft 81 (ac) and a roller shaft 81 (ac) that are supported by the main body 39 so as to be rotatable around the vertical axis. It is comprised by the holder 82 (ac) fixed to the upper end.

  As shown in FIG. 9, the holders 82 (a to c) have the same configuration, and include a shaft portion 821 and a drive transmission portion 823 in which a substantially V-shaped circumferential groove 822 is formed on the outer peripheral surface. The rotation is transmitted to the wafer W while the end of the wafer W is in contact with the circumferential groove 822. The holder 82 is formed of a resin having high hardness, such as polyether ether ketone. This is set to such a hardness that the end of the wafer W is not damaged by contact.

  The driving force required to rotate the wafer W is applied only to the holding roller 80b. That is, the driving force of the motor M1 attached to the lower end of the base portion 37 is transmitted to the central holding roller 80b among the holding rollers 80 (a to c) via the connecting portion 824 and the roller shaft 81b. It is like that.

  Further details will be described. As shown in FIG. 6, the roller shaft 81a of the holding roller 80a passes through an insertion hole 391a formed in the main body 39 and extends to a space 392 formed inside the main body 39. The main body 39 is rotatably supported by two bearings 393a and 393b disposed on the 391a. Similarly, the roller shaft 01c of the other holding roller 80c extends to the space 392 through the insertion hole 391c, and can freely rotate to the main body 39 through two bearings 394a and 394b disposed in the insertion hole 391c. It is supported by.

  The roller shaft 81b of the central holding roller 80b extends through the insertion hole 391b formed in the main body 39 to the space 392 formed inside the main body 39, and through the insertion hole 395. It protrudes below the main body 39. The main body 39 is rotatably supported by a bearing 396 a disposed in the insertion hole 391 b and a bearing 396 b disposed in the insertion hole 395.

  Two pulleys 83b and 84b are attached to the central roller shaft 81b. Belts 85 and 86 are respectively wound between the two pulleys 83b and 84b and the pulleys 83a and 84c attached to the other two roller shafts 81a and 81c, respectively. Reference numerals 87 and 88 denote tension shafts for applying tension to the belts 85 and 86, respectively.

  With this configuration, by driving the cylinder 364, the base portion 37 moves on the slide rail 365 via the connecting plate 371 by the slide portion 372, and the holding hand 35 a can be advanced and retracted along the holding direction A. Then, the holding hands 35a and 35b advance and retreat in opposite directions, whereby the wafer W can be held between the holding rollers 70 or released. That is, the cylinder 364 constitutes a driving unit for the holding device 33. At this time, the insertion hole 30f of the bottom wall 30e is opened larger than the slide region of the hand shaft 38, and the movement of the holding hand 35a is not hindered.

  When the central holding roller 80b is driven by the motor M1, the driving force transmitted to the central holding roller 80b is applied to the other two holding rollers 80a and 80c via the belts 85 and 86. And the other two holding rollers 80a and 80c are driven accordingly. As a result, the wafer W held by the holding rollers 80 (a to c) starts to rotate. In this manner, the wafer W rotates along the rotation direction B while being held by the holding rollers 80 (ac). In this case, the rotation speed of the wafer W is, for example, about 10 to 20 (rotations / minute). As described above, in this embodiment, the motor M1 and the belts 85 and 86 correspond to the rotation drive unit.

  As shown in FIG. 8, the peripheral edge cleaning means 90 includes a shaft portion 91, a cleaning tool 92 connected to the upper portion of the shaft portion 91, a rotation drive portion 93 and a lift drive portion 94 connected to the lower portion of the shaft portion 91. It is composed of The peripheral edge cleaning means 90 is disposed below the circumference corresponding to the end face shape of the wafer W as shown in FIG.

  As shown in FIG. 10, the cleaning tool 92 includes a cylindrical main body 921 connected to the shaft portion 91 and brush bristles 922 that are uniformly planted in the main body 921. The brush bristles 922 are formed so that the length thereof is longer from the outside toward the center so as to be substantially conical. And the side surface formed by the front-end | tip of the bristle 922 inclines in sectional view as shown in FIG.

  The rotation drive unit 93 is configured by a motor M2 connected to the shaft unit 91 via a connecting plate 931. The motor M2 is fixed to an outer cylinder 934 that rotatably supports the shaft portion 91 by bearings 932 and 933.

  The raising / lowering drive unit 94 includes a cylinder 941 in which a rod 941a is connected to a connecting piece 935 of an outer cylinder 934, a rail part 942 disposed on the peripheral surface of the outer cylinder 934, and a slide rail 943 for guiding the rail part 942. Is done.

  With this configuration, by driving the cylinder 941, the shaft portion 91 can be moved on the slide rail 943 via the outer cylinder 934 by the slide portion 942, and can be advanced and retracted in the vertical direction. That is, the cylinder 941 constitutes a moving unit for the peripheral edge cleaning unit 90.

  At this time, the edge of the wafer W is pressed against the side surface of the brush bristle 922 of the cleaning tool 92, and the brush bristle 922 is deformed so that the peripheral part including the lower surface and the end surface of the wafer W is cleaned by the brush bristle 922. .

  When the shaft portion 91 is driven by the motor M2, the cleaning tool 92 is driven by the wafer W in the direction opposite to the rotation direction. As a result, the wafer W is cleaned so that the bristles 922 strike the end surface of the wafer W and rub against the lower surface.

  Reference numeral 300 is a bellows that can be deformed and expanded as the holding hand 35a and the peripheral edge cleaning means 90 move, so that the cleaning liquid used in the double-sided cleaning device 34 and its atmosphere do not affect the drive unit. Or to prevent leakage outside the processing section 302. Further, it is also for preventing particles generated from the rods 364 a and 941 a of the cylinders 364 and 941, the hand shaft 38 and the shaft portion 91 from entering the processing section 302.

  Returning to FIG. 5, the double-sided cleaning device 34 includes a front brush 31 and a back brush 32 disposed above and below the wafer W held by the holding device 33. The front brush 31 and the back brush 32 are arranged so as to cover the planar area of the wafer W extending from the center portion to the peripheral portion of the wafer W at positions that do not interfere with the holding hands 35a and 35b.

  The front brush 31 and the back brush 32 have base portions 312 and 322 having attachment surfaces 311 and 321 on the side facing the wafer W, and rotating shafts 313 and 323 attached to the base portions 312 and 322, respectively. The drive units 314 and 324 can rotate along the rotation direction C around the rotation axis O along the vertical axis direction. Further, the front brush 31 and the back brush 32 can be moved in the vertical direction by the lift drive units 315 and 32, respectively. Thus, the wafer W can be sandwiched between the front brush 31 and the back brush 32 during the wafer cleaning, and the front brush 31 and the back brush 32 can be separated from the wafer W after the wafer cleaning. ing.

  Cleaning brushes (double-side scrub means) 316 and 326 are provided on the mounting surfaces 311 and 321 of the base portions 312 and 322, respectively. Near the center of the cleaning brushes 316 and 326, cleaning liquid supply nozzles 317 (a, b) and 327 (a, b) for supplying a cleaning liquid to the wafer W are arranged, respectively. The cleaning liquid contains a chemical solution such as hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, and ammonia, and pure water.

  Cleaning pipes 318 (a, b), 328 (a, b) are connected to the cleaning liquid supply nozzles 317 (a, b), 327 (a, b). The cleaning pipes 318 (a, b) and 328 (a, b) are inserted into the rotary shafts 313 and 323 so as not to rotate, and the other end is a chemical solution from which a chemical solution is guided from a chemical solution tank (not shown). On-off valves 330 (a, b) and 331 (a, b) are connected to the supply paths 319a and 329a and pure water supply paths 319b and 329b through which pure water is guided from a pure water tank (not shown). With this configuration, the chemical solution and pure water can be selectively supplied to the cleaning pipes 318 (a, b), 328 (a, b), and accordingly, from the cleaning liquid supply nozzles 317 (a, b), 327 (a, b). A chemical solution and pure water can be selectively discharged.

  Next, the configuration of the shuttle transfer robot 60 will be described. FIG. 11 is a plan view of the shuttle transfer robot, and FIGS. 12A and 12B are schematic side views showing the relationship between the shuttle transfer robot 60 and the wafer W processing unit.

  The shuttle transfer robot 60 shown in FIG. 11 is provided with three holding portions 61, 62, 63 for holding the wafer W when transferring the wafer W between the processing portions. The holding unit 61 provided on the direction side is in charge of transporting the wafer W from the mounting unit 20 to the processing unit 30, and the holding unit 62 provided in the center is the wafer W from the processing unit 30 to the processing unit 40. The holding unit 63 provided closest to the −X axis direction is in charge of transferring the wafer W from the processing unit 40 to the processing unit 50.

  Each holding | maintenance part 61, 62, 63 is provided with 1st arm 61a, 62a, 63a and 2nd arm 61b, 62b, 63b. Each arm is provided with two holding members 64 for holding the wafer W at the periphery as shown in FIG. The first arms 61a, 62a, and 63a and the second arms 61b, 62b, and 63b are configured to perform a sliding operation in the XY plane.

  When a controller (not shown) in the substrate processing apparatus 100 sends a drive command to a drive means (not shown), the first arms 61a, 62a, 63a move in the + X axis direction, while the second arms 61b. , 62b, 63b move in the −X axis direction. By this operation, the operation of holding the wafer W by the shuttle transfer robot 60 (that is, the chucking operation of the wafer W) is performed. This chucking operation is an operation of sandwiching the wafer W by the two arms of the first arm 61a, 62a, 63a and the second arm 61b, 62b, 63b, so that it only supports the lower surface of the wafer W. In comparison, the position alignment of the wafer W transferred to each processing unit is performed.

  Conversely, the first arms 61a, 62a, 63a move in the −X axis direction, while the second arms 61b, 62b, 63b move in the + X axis direction, whereby the wafer W of the shuttle transfer robot 60 is moved. An operation for releasing the holding state is performed.

  Further, the holding portions 61, 62, 63 also rotate about the rotation shaft 65 in the α direction by driving a motor (not shown). Therefore, by driving the motor while the holding units 61, 62, and 63 hold the wafer W, the wafer W also rotates on the YZ plane.

  Here, as shown in FIG. 12A, when a slight amount of rotation in the α direction is applied to the rotation shaft 65, the holding unit 61 in the holding state of the wafer W rotates in a small amount in the α direction in that state. . Accordingly, the wafer W placed on the placement unit 20 is detached by being held by the holding unit 61 and rotating in the α direction. Similarly, the wafers W held by the processing units 30 and 40 are released from the holding state in the processing units 30 and 40 by being held by the holding units 61, 62, and 63 and rotating in the α direction. It will be.

  The holding units 61, 62, and 63 are connected to a moving table 66 at the lower part, and the moving table 66 moves along the −X axis direction. Accordingly, the holding portions 61, 62, and 63 also move along the −X axis direction at the same time.

  First, as shown in FIG. 11, the shuttle transport robot 60 is located on the side corresponding to the placement unit 20 and the processing units 30 and 40. During processing of the wafer W in the processing units 30 and 40, the holding units 61, 62, and 63 are at positions indicated by alternate long and short dash lines in the drawing. When the processing of the wafer W in the processing units 30 and 40 is completed, each holding unit 61 moves to a position indicated by a solid line in the drawing, and the wafers W in the mounting unit 20, the processing unit 30, and the processing unit 40 are moved. Hold. Then, after raising each wafer W, the shuttle transfer robot 60 is moved in the −X axis direction.

  Then, after the wafer W transferred to the processing unit 30, the processing unit 40, and the processing unit 50 is lowered, the holding units 61, 62, and 63 are retracted to the positions indicated by alternate long and short dash lines, whereby the wafer W to each processing unit is stored. The transfer operation is completed. When the holding units 61, 62, and 63 are retracted, they are retracted to a retreat position 67 provided between the processing units.

  As described above, since the shuttle transfer robot 60 is configured to simultaneously transfer the wafers W between the adjacent processing units, the shuttle transfer robot 60 realizes efficient transfer of the wafers W between the processing units. The transfer of the wafer W from the mounting unit 20 to the processing unit 30, the transfer of the wafer W from the processing unit 30 to the processing unit 40, and the transfer of the wafer W from the processing unit 40 to the processing unit 50 are individually transferred. There is no need to provide a robot, and the footprint of the substrate processing apparatus 100 can be reduced.

  The wafer W is taken out of the processing unit 50 by the transfer arm 11 of the transfer robot 10 as described above.

  Next, the cover 70 will be described. As shown in FIG. 12, the cover 70 covers each processing unit so that processing liquid or the like does not scatter during processing of the wafer W in the processing units 30, 40, 50. Further, as shown in FIG. 11, the cover 70 corresponds to each retracted position 67 so as not to be buffered by the holding portions 61, 62, 63 of the shuttle transport robot 60 retracted to the retracted position 67 when lowered. The recess 71 is provided. Therefore, when the holders 61, 62, 63 of the shuttle transport robot 60 are retracted to the positions indicated by the one-dot chain line in FIG. 11, if the cover 70 is lowered, the cover 70 contacts the holders 61, 62, 63. It is possible to satisfactorily cover the processing units 30, 40, and 50 without any problems.

Further, if the cover 70 is lowered immediately after the holding units 61, 62, 63 of the shuttle transfer robot 60 are retracted to the retreat position 67, the processing of the wafer W in each of the processing units 30, 40, 50 is started. Can do.

Next, the relationship between the cover 70 and the shuttle transport robot 60 will be described with reference to FIGS. As shown in FIG. 12A, the rotation shaft 65 of the shuttle transfer robot 60 rotates slightly in the α direction, and the transfer between the processing units is performed with the holding unit 61 lifting the wafer W. At this time, the cover 70 is in a state of being lifted by lifting means (not shown) so as not to be buffered during the transport operation of the shuttle transport robot 60.

  By the way, when the transfer of the wafer W between the processing units is finished and the cover 70 is lowered and the processing of the wafer W in each processing unit is started, the shuttle transfer robot at a position corresponding to the processing units 30, 40, 50. In preparation for the next transfer between the processing units, 60 is moved in advance to a position corresponding to the placement unit 20 and the processing units 30 and 40 as necessary.

  However, since each processing unit is processing the wafer W and the cover 70 is in a closed state, when the shuttle transfer robot 60 is moved in the + X-axis direction with the holding unit 61 in the retracted position 67, the cover is covered. Collide with 70.

  Therefore, in the shuttle transport robot 60, as shown in FIG. 12B, the holding unit 61 is raised by rotating the rotation shaft 65 of the shuttle transport robot 60 by about 90 degrees, and is held with the cover 70 in a side view. A state is set so that the portion 61 does not overlap. Thus, even if the shuttle transport robot 60 moves in the X-axis direction, the holding unit 61 does not buffer the cover 70, and the shuttle transport robot 60 is placed on the mounting unit during the processing of the wafer W in each processing unit. 20, it is possible to move to a position corresponding to the processing units 30 and 40 in advance.

  When the shuttle transport robot 60 moves in the X-axis direction and reaches a position corresponding to the placement unit 20 and the processing units 30 and 40, the upright holding unit 61 is returned to a substantially horizontal state again.

  In the case where the holding unit 61 is cleaned while waiting at the position of the holding unit 61 indicated by the one-dot chain line in FIG. 11 during the processing of the wafer W, the inside of the mounting unit 20 is located near the mounting unit 20. A nozzle (not shown) for discharging the rinsing liquid may be provided to the holding unit 61 that chucks the wafer W. And it becomes possible to wash | clean the holding | maintenance part 61 by discharging a rinse liquid from the nozzle provided in the vicinity of the mounting part 20. FIG. In addition, the holders 61, 62, and 63 can be cleaned by using a means for discharging a rinsing liquid from a nozzle or the like disposed in each retreat position 67.

  FIG. 13 is a block diagram showing the main electrical configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 includes a control unit 500 configured with a microcomputer or the like that functions as a control center of the apparatus. The control unit 500 follows cylinders 364, 364, 941, motors M1, M2, rotation drive units 314, 324, 93, lift drive units 315, 325, 94, and on-off valve 330 (a , B), 331 (a, b) are controlled.

  Next, the cleaning operation of the substrate processing apparatus 100 will be described. Before the cleaning, the holding hands 35a and 35b stand by at a standby position retracted from the holding position for holding the wafer W, and the front brush 31 and the back brush 32 are also standby by being separated from the wafer W. When the CMP process as the previous process is completed and the wafer W is transferred by the shuttle transfer robot 60, the control unit 500 advances the rod 364a of the cylinder 364. As a result, the holding hands 35a and 35b approach each other. As a result, the wafer W is held by the holding rollers 80 (ac) at the end face.

  The peripheral edge cleaning means 90 is also positioned at the cleaning position at the end of the wafer W accurately by advancing the rod 941a of the cylinder 941 with a slight delay. And the edge part of the wafer W will be pressed by the side surface by the bristle 922. FIG.

  Thereafter, the control unit 500 drives the rotation driving units 314 and 324 to rotate the upper surface brush 31 and the back surface brush 32. At the same time, the controller 500 controls the on-off valves 330a and 331a to connect the chemical solution supply paths 319a and 329a. As a result, the chemical liquid is supplied from the cleaning liquid supply nozzles 317a and 327a to the upper surface and the lower surface of the wafer W, respectively.

  Thereafter, the controller 500 drives the motors M1 and M2. As a result, the holding rollers 80 (a to c) are rotationally driven, and accordingly, the wafer W rotates at a low speed. The cleaning tool 92 is driven in reverse rotation.

  Further, the control unit 500 controls the elevation drive units 315 and 325 to move the front brush 31 and the rear brush 32 in a direction approaching each other. As a result, the wafer W held by the holding rollers 80 (ac) is sandwiched between the front brush 31 and the back brush 32, and the upper and lower surfaces of the wafer W are rubbed by the front brush 31 and the back brush 32. As a result, the upper and lower surfaces of the wafer W are scrubbed by the front brush 31 and the rear brush 32 while the chemical solution is supplied. As a result, the slurry remaining on the upper and lower surfaces of the wafer W is removed.

  At the same time, the edge of the wafer W is cleaned by the peripheral edge cleaning means 90. Since the peripheral edge cleaning means 90 rotates in the direction opposite to the rotation of the wafer W, a sufficient cleaning action is performed on the peripheral edge of the end of the wafer W at the cleaning position.

  After a predetermined time elapses, the control unit 500 controls the elevation drive units 315 and 325 to move the front brush 31 and the back brush 32 away from the wafer W, and moves the front brush 31 and the back brush 32 from the wafer W. Let go. Then, the on-off valves 319a and 319b are closed and the on-off valves 329a and 329b are controlled to open, and the cleaning pipes 318b and 328b are connected to the pure water supply paths 319b and 329b. As a result, pure water is supplied from the cleaning liquid supply nozzles 317b and 327b to the upper and lower surfaces of the wafer W, and the chemicals remaining on the upper and lower surfaces of the wafer W are washed away.

  Thereafter, the control unit 500 controls the on-off valves 329a and 329b to stop the discharge of pure water, and stops the rotation driving units 314 and 324 to stop the rotation of the front brush 31 and the back brush 32. Further, the driving of the motors M1 and M2 is stopped, and the rotation of the wafer W and the peripheral edge cleaning means 90 is stopped. Thereby, the scrub cleaning process in the double-sided cleaning device 34 is completed.

  Thereafter, the control unit 500 reverses the front and back of the wafer W by the reversing device 3 and holds the wafer W in the holding device 33, and scrub cleaning processing is performed in the same manner as described above.

  As a result, the etching solution remaining on the surface of the peripheral portion of the wafer W is washed away, and the slurry remaining on the peripheral portion of the wafer W is removed or unnecessary thin films are etched.

  After the completion of the cleaning process, the control unit 500 moves the holding hands 35a and 35b toward the wafer W. As a result, the shuttle transfer robot 60 transfers the wafer W to the next processing unit 40. In the processing unit 40, the surface cleaning process is performed by the brush 41. Then, the processing unit 50 performs final rinsing of the wafer using a rinsing liquid such as pure water, and then rotates the wafer at high speed to perform spin dry drying (rinsing / drying).

  Further, the transfer robot 10 performs a final rinse process in the processing unit 50, takes out the dried wafer W, and stores the wafer W in the pod 9 provided in the substrate storage unit 7.

  As described above, according to the present embodiment, the end portion of the wafer W can be held and cleaned from below, so that the contact state with the end portion of the wafer W can be ensured and the cleaning position can be separately provided. Does not require a structure to move horizontally. Therefore, even if the slurry remains at the peripheral edge of the wafer W, the slurry can be reliably removed. As a result, a reaction product between the slurry and the thin film is not generated. Therefore, the entire wafer W after the CMP process can be cleaned satisfactorily. Therefore, a high-quality semiconductor manufacturing apparatus can be provided.

  The description of one embodiment of the present invention is as described above, but the present invention is not limited to the above-described embodiment. For example, in the above embodiment, the case where the central portion and the peripheral portion of the wafer W are cleaned in one processing chamber 301 has been described as an example. For example, the central portion of the wafer W is cleaned in the first processing chamber. After that, the peripheral portion of the wafer W may be cleaned in another second processing chamber. Also with this configuration, the central portion and the peripheral portion of the wafer W can be cleaned, so that defects such as a film residue can be eliminated and the entire surface of the wafer W can be cleaned satisfactorily as in the above embodiment.

  In the above embodiment, as shown in FIGS. 4 to 7 and FIG. 9, the configuration in which the wafer W is held by the six holding rollers 80 is described as an example. There may be at least three rollers. In this case, the driving force may be transmitted only to any one of the three or more holding rollers. Also with this configuration, the wafer W can be rotated while being held at the end face.

  Furthermore, in the above embodiment, the peripheral edge cleaning means 90 is rotated in the direction opposite to the rotation direction B of the wafer W, but may be fixed. Alternatively, the wafer W may be rotated at a rotational speed (peripheral speed) different from the rotational speed (peripheral speed) of the wafer W in the same direction.

  Furthermore, in the said embodiment, although it is set as the structure which arrange | positions one peripheral part washing | cleaning means 90, it is good also as a structure which arranges multiple.

  Furthermore, in the said embodiment, although the cleaning tool 92 of the peripheral part washing | cleaning means 90 was comprised by the bristle 922, you may comprise by the sponge-like member which has many pores by PVA, for example.

  Furthermore, in the above embodiment, the case where the wafer W after the CMP process is cleaned is described as an example. However, the present invention is not limited to the process after the CMP process, and the center part and the peripheral part of the wafer W are cleaned. Can be widely applied when necessary.

  Furthermore, although the case where the wafer W is cleaned has been described in the above embodiment, the present invention cleans various other substrates such as a glass substrate for a liquid crystal display device and a plasma display panel (PDP) substrate. Can be widely applied to. In addition, various design changes can be made within the scope described in the claims.

It is a top view which shows the substrate processing apparatus which concerns on embodiment of this invention. It is a schematic sectional drawing in the YZ plane of the substrate processing apparatus which concerns on embodiment of this invention. It is a schematic sectional drawing in the ZX plane of the substrate processing apparatus which concerns on embodiment of this invention. It is a schematic plan view which shows the structure of the washing | cleaning apparatus which concerns on embodiment of this invention. It is sectional drawing of the DD arrow of FIG. 4 which shows the washing | cleaning apparatus which concerns on embodiment of this invention. It is the side view which made the principal part the cross section which shows the washing | cleaning apparatus which concerns on embodiment of this invention. It is an enlarged view of the holding hand 35a of FIG. It is a schematic sectional drawing which shows a peripheral part washing | cleaning means. It is a side view which shows a holding roller. It is sectional drawing which shows a peripheral part washing | cleaning means. It is explanatory drawing which shows the mode of conveyance between process parts by a shuttle conveyance robot. It is the schematic side view which shows the operation | movement relationship between a cover and a holding | maintenance part, (a) is the state which hold | maintained the wafer, (b) is the figure which showed the state which stood the holding | maintenance part. It is a block diagram which shows the structure of the control part of a substrate processing apparatus. It is a schematic block diagram of the conventional washing | cleaning apparatus. It is a side view which shows the structure of the conventional washing | cleaning apparatus. It is explanatory drawing which shows the washing | cleaning area | region of the edge part of the conventional board | substrate.

Explanation of symbols

30, 40, 50 Processing unit 33 Holding device 34 Double-sided cleaning device 90 Peripheral portion cleaning means 91 Shaft unit 92 Cleaning tool 922 Brush bristles 93 Rotation drive unit 100 Substrate processing apparatus 200 CMP apparatus W Wafer

Claims (8)

In a cleaning apparatus for processing a thin plate-shaped object,
A peripheral edge cleaning means having a cleaning portion having a substantially conical inclined side surface for cleaning an end portion of the object to be processed;
Moving means for bringing the peripheral edge cleaning means into contact with the end of the object to be processed;
Have
The cleaning portion of the peripheral edge cleaning means is formed by an integrally formed sponge body,
The moving means abuts the end of the object to be processed with the inclined side surface formed by the sponge body of the peripheral edge cleaning means,
A cleaning apparatus, wherein the edge of the substrate is cleaned by being pressed by the sponge body. The cleaning device according to claim 1,
A cleaning apparatus comprising: a first rotation driving unit that rotates the peripheral edge cleaning unit. The cleaning apparatus according to claim 2,
A second rotation drive unit that rotates the object to be processed while holding a peripheral edge of the object to be processed;
First control means for rotating the first rotation drive unit and the second rotation drive unit in opposite directions;
The cleaning apparatus further comprising: The cleaning apparatus according to claim 2,
A second rotation drive unit that rotates the object to be processed while holding a peripheral edge of the object to be processed;
First control means for rotating the first rotation drive unit and the second rotation drive unit in the same direction;
The cleaning apparatus further comprising: The cleaning apparatus according to claim 4, wherein
The first rotation driving unit and the second rotation driving unit rotate the peripheral edge cleaning unit and the object to be processed at different rotation speeds in the same direction. In the cleaning apparatus according to any one of claims 1 to 5,
The cleaning apparatus according to claim 1, wherein the first rotation driving unit rotates the peripheral edge cleaning unit about an axis perpendicular to a main surface of the object to be processed. In the cleaning apparatus according to any one of claims 1 to 6,
2. The cleaning apparatus according to claim 1, wherein the sponge body is a PVA sponge body. In the cleaning apparatus according to any one of claims 1 to 7,
2. The cleaning apparatus according to claim 1, wherein the object to be processed is a substrate that has been processed to polish a surface on which a thin film is formed.

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