JP2007043046A - 保護素子を備えた発光素子 - Google Patents
保護素子を備えた発光素子 Download PDFInfo
- Publication number
- JP2007043046A JP2007043046A JP2005332169A JP2005332169A JP2007043046A JP 2007043046 A JP2007043046 A JP 2007043046A JP 2005332169 A JP2005332169 A JP 2005332169A JP 2005332169 A JP2005332169 A JP 2005332169A JP 2007043046 A JP2007043046 A JP 2007043046A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- resistive
- protection element
- light
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 31
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910003962 NiZn Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】カソード及びアノードを有する発光部と、カソード及びアノードを介して発光部に並列接続される抵抗性保護素子120と、を備え、抵抗性保護素子120の抵抗値Rsは、発光部が有する電流フローに対して順方向の抵抗値Rfと逆方向の抵抗値Rrとの間の値を有する。
【選択図】図1
Description
110 発光部、
111 下部半導体物質層、
112 活性層、
113 上部半導体物質層、
114 第1電極、
115 第2電極、
120 抵抗性保護素子。
Claims (8)
- カソード及びアノードを有する発光部と、
前記カソード及びアノードを介して前記発光部に並列接続される抵抗性保護素子と、を備え、
前記抵抗性保護素子の抵抗値Rsは、前記発光部が有する電流フローに対する順方向の抵抗値Rfと逆方向の抵抗値Rrとの間の値を有することを特徴とする抵抗性保護素子を備えた発光素子。 - 前記抵抗性保護素子は、酸化亜鉛、酸化インジウムスズ、多結晶シリコン、導電性無機物、及び導電性有機物よりなる群から選択されるいずれか1つの物質から形成されていることを特徴とする請求項1に記載の抵抗性保護素子を備えた発光素子。
- 前記抵抗性保護素子は、前記発光部上に薄膜状で一体に集積されていることを特徴とする請求項1または請求項2に記載の抵抗性保護素子を備えた発光素子。
- 前記抵抗性保護素子は、電子ビーム蒸着法またはスパッタリング法により形成されていることを特徴とする請求項1または請求項2に記載の抵抗性保護素子を備えた発光素子。
- 下部半導体物質層、上部半導体物質層、及び当該下部半導体物質と上部半導体物質との間に設けられる活性層を有する発光部と、
前記上部半導体物質層に電気的に接触される第1電極と、
前記下部半導体物質層に電気的に接触される第2電極と、
前記第1電極及び第2電極に接続される抵抗性保護素子と、を備え、
前記抵抗性保護素子の抵抗値Rsは、前記発光部が有する電流フローに対する順方向の抵抗値Rfと逆方向の抵抗値Rrとの間の値を有することを特徴とする抵抗性保護素子を備えた発光素子。 - 前記抵抗性保護素子は、酸化亜鉛、酸化インジウムスズ、多結晶シリコン、導電性無機物、及び導電性有機物よりなる群から選択されるいずれか1つの物質から形成されていることを特徴とする請求項5に記載の抵抗性保護素子を備えた発光素子。
- 前記抵抗性保護素子は、前記発光部上に薄膜状で集積されていることを特徴とする請求項5または請求項6に記載の抵抗性保護素子を備えた発光素子。
- 前記抵抗性保護素子は、電子ビーム蒸着法またはスパッタリング法により形成されていることを特徴とする請求項5または請求項6に記載の抵抗性保護素子を備えた発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70488305P | 2005-08-03 | 2005-08-03 | |
US60/704,883 | 2005-08-03 | ||
KR1020050089474A KR20070016898A (ko) | 2005-08-03 | 2005-09-26 | 보호 소자를 갖춘 발광소자 및 그 제조방법 |
KR10-2005-0089474 | 2005-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007043046A true JP2007043046A (ja) | 2007-02-15 |
JP5052781B2 JP5052781B2 (ja) | 2012-10-17 |
Family
ID=37317798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005332169A Expired - Fee Related JP5052781B2 (ja) | 2005-08-03 | 2005-11-16 | 保護素子を備えた発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7411221B2 (ja) |
EP (1) | EP1750309A3 (ja) |
JP (1) | JP5052781B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011014695A (ja) * | 2009-07-01 | 2011-01-20 | Sharp Corp | 発光装置および発光装置の製造方法 |
JP2011199006A (ja) * | 2010-03-19 | 2011-10-06 | Sharp Corp | 窒化物半導体レーザ素子 |
JP2011258611A (ja) * | 2010-06-04 | 2011-12-22 | Sharp Corp | 発光装置 |
JP2012064647A (ja) * | 2010-09-14 | 2012-03-29 | Sharp Corp | 化合物系半導体発光素子およびその製造方法 |
US8723195B2 (en) | 2010-01-22 | 2014-05-13 | Sharp Kabushiki Kaisha | Light emitting device with plurality of LED chips and/or electrode wiring pattern |
US9024334B2 (en) | 2009-11-13 | 2015-05-05 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
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KR100833313B1 (ko) * | 2006-01-02 | 2008-05-28 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자 및 그의 제조방법 |
GB2439358B (en) * | 2006-06-19 | 2010-12-15 | Cambridge Display Tech Ltd | Organic electroluminescent optocouplers |
US7962232B2 (en) * | 2006-10-01 | 2011-06-14 | Dell Products L.P. | Methods and media for processing a circuit board |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
KR100875128B1 (ko) * | 2007-01-16 | 2008-12-22 | 한국광기술원 | 고내정전압을 갖는 발광다이오드 및 그의 제조방법 |
KR20080089859A (ko) * | 2007-04-02 | 2008-10-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
KR101438811B1 (ko) * | 2008-01-03 | 2014-09-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
WO2009153624A1 (en) * | 2008-06-20 | 2009-12-23 | Freescale Semiconductor, Inc. | A system for distributing available memory resource |
US9781803B2 (en) * | 2008-11-30 | 2017-10-03 | Cree, Inc. | LED thermal management system and method |
US8643283B2 (en) * | 2008-11-30 | 2014-02-04 | Cree, Inc. | Electronic device including circuitry comprising open failure-susceptible components, and open failure-actuated anti-fuse pathway |
CN102550127A (zh) * | 2009-07-21 | 2012-07-04 | 安德烈·佩特佐尔德 | 发光体 |
JP5446915B2 (ja) * | 2010-01-21 | 2014-03-19 | セイコーエプソン株式会社 | 生体情報検出器及び生体情報測定装置 |
KR100999692B1 (ko) * | 2010-02-18 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
TWI450415B (zh) * | 2010-03-23 | 2014-08-21 | Lg Innotek Co Ltd | 發光裝置、發光裝置封裝件及照明系統 |
JP5281612B2 (ja) | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
US9246061B2 (en) | 2011-03-14 | 2016-01-26 | Koninklijke Philips N.V. | LED having vertical contacts redistruted for flip chip mounting |
DE102011103786A1 (de) * | 2011-06-09 | 2012-12-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Display mit einem derartigen Halbleiterchip und Verwendung eines derartigen Halbleiterchips oder eines Displays |
DE102012223793A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102013103601A1 (de) | 2013-04-10 | 2014-10-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
KR102227769B1 (ko) | 2014-11-06 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지 |
WO2018183206A1 (en) | 2017-03-26 | 2018-10-04 | Apple, Inc. | Enhancing spatial resolution in a stereo camera imaging system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065215A (ja) * | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
JP2005005281A (ja) * | 2002-12-26 | 2005-01-06 | Shogen Koden Kofun Yugenkoshi | 電圧依存性抵抗器層を持つ光放射体 |
JP2005136177A (ja) * | 2003-10-30 | 2005-05-26 | Toyoda Gosei Co Ltd | Iii−v族窒化物半導体素子 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2319267A1 (fr) * | 1973-07-03 | 1977-02-18 | Radiotechnique Compelec | Dispositif electroluminescent a seuil |
JPS60154690A (ja) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 発光装置 |
IL86349A (en) * | 1987-05-26 | 1993-04-04 | Hughes Aircraft Co | Temperature stabilization of laser diodes and light emitting diodes |
JPH02205364A (ja) * | 1989-02-03 | 1990-08-15 | Sumitomo Electric Ind Ltd | 面発光型発光ダイオード |
JP2664793B2 (ja) * | 1990-04-06 | 1997-10-22 | 株式会社東芝 | 半導体装置の製造方法 |
JPH06151958A (ja) * | 1992-11-02 | 1994-05-31 | Eastman Kodak Japan Kk | 発光装置 |
FR2733165B1 (fr) | 1995-04-20 | 1997-06-13 | Inst Francais Du Petrole | Carbonates alcalins ou alcalino-terreux colloidaux contenant un compose de calcium,de phospore et de soufre sous forme miscellisee |
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
DE10037420A1 (de) * | 2000-07-21 | 2002-01-31 | Sli Miniature Lighting Gmbh | Hochpräzise oberflächenmontierbare Leuchtdiode |
JP2002094121A (ja) * | 2000-09-19 | 2002-03-29 | Toshiba Electronic Engineering Corp | 半導体発光装置 |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
TW492202B (en) | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
JP4204029B2 (ja) * | 2001-11-30 | 2009-01-07 | ローム株式会社 | チップ抵抗器 |
US6709944B1 (en) * | 2002-09-30 | 2004-03-23 | General Electric Company | Techniques for fabricating a resistor on a flexible base material |
KR100624411B1 (ko) * | 2003-08-25 | 2006-09-18 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7342261B2 (en) * | 2005-05-16 | 2008-03-11 | Dong-Sing Wuu | Light emitting device |
-
2005
- 2005-10-28 EP EP05256701A patent/EP1750309A3/en not_active Withdrawn
- 2005-11-14 US US11/271,947 patent/US7411221B2/en not_active Expired - Fee Related
- 2005-11-16 JP JP2005332169A patent/JP5052781B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065215A (ja) * | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子 |
JP2005005281A (ja) * | 2002-12-26 | 2005-01-06 | Shogen Koden Kofun Yugenkoshi | 電圧依存性抵抗器層を持つ光放射体 |
JP2005136177A (ja) * | 2003-10-30 | 2005-05-26 | Toyoda Gosei Co Ltd | Iii−v族窒化物半導体素子 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011014695A (ja) * | 2009-07-01 | 2011-01-20 | Sharp Corp | 発光装置および発光装置の製造方法 |
US9024334B2 (en) | 2009-11-13 | 2015-05-05 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
US9607970B2 (en) | 2009-11-13 | 2017-03-28 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
US9231023B2 (en) | 2009-11-13 | 2016-01-05 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
US9425236B2 (en) | 2010-01-22 | 2016-08-23 | Sharp Kabushiki Kaisha | Light emitting device |
US8723195B2 (en) | 2010-01-22 | 2014-05-13 | Sharp Kabushiki Kaisha | Light emitting device with plurality of LED chips and/or electrode wiring pattern |
US9093357B2 (en) | 2010-01-22 | 2015-07-28 | Sharp Kabushiki Kaisha | Light emitting device |
US9312304B2 (en) | 2010-01-22 | 2016-04-12 | Sharp Kabushiki Kaisha | LED illuminating device comprising light emitting device including LED chips on single substrate |
US9679942B2 (en) | 2010-01-22 | 2017-06-13 | Sharp Kabushiki Kaisha | Light emitting device |
US9966367B2 (en) | 2010-01-22 | 2018-05-08 | Sharp Kabushiki Kaisha | Light emitting device |
JP2011199006A (ja) * | 2010-03-19 | 2011-10-06 | Sharp Corp | 窒化物半導体レーザ素子 |
JP2011258611A (ja) * | 2010-06-04 | 2011-12-22 | Sharp Corp | 発光装置 |
JP2012064647A (ja) * | 2010-09-14 | 2012-03-29 | Sharp Corp | 化合物系半導体発光素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1750309A2 (en) | 2007-02-07 |
EP1750309A3 (en) | 2009-07-29 |
US7411221B2 (en) | 2008-08-12 |
JP5052781B2 (ja) | 2012-10-17 |
US20070030611A1 (en) | 2007-02-08 |
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