JP2007042983A5 - - Google Patents

Claims (8)

On the upper side of an elastic film made of silicon dioxide (SiO ₂ ) provided on a silicon (Si) single crystal substrate, a lower electrode and a plane orientation (100) made of a conductive material provided on the lower electrode A piezoelectric layer comprising a buffer layer, a piezoelectric layer having a plane orientation (100) made of lead zirconate titanate (PZT) formed by epitaxial growth on the buffer layer, and an upper electrode provided on the piezoelectric layer. And a piezoelectric layer body provided on a boundary portion with the buffer layer, the composition gradient layer having a composition continuously changed in the thickness direction, and the piezoelectric layer body laminated on the composition gradient layer. DOO have a, the composition gradient layer, Zr / Ti (molar ratio) and an actuator and wherein the lattice constant is obtained by continuously changing the thickness direction. In Claim 1 , the lattice constant of the composition gradient layer is a value between the lattice constant of the buffer layer and the lattice constant of the piezoelectric body, and as the distance from the buffer layer increases, An actuator device characterized by continuously changing from a value close to the lattice constant of the buffer layer to a value close to the lattice constant of the piezoelectric layer body. 3. The actuator device according to claim 2 , wherein a difference in lattice constant between the buffer layer and the piezoelectric layer body is 8% or less. According to claim 2 or 3, wherein the lattice constant of the buffer layer is smaller than the lattice constant of the piezoelectric layer body, the composition gradient layer Zr / Ti (molar ratio), separated in the thickness direction from the buffer layer Therefore, the actuator device is characterized by being gradually enlarged. In any one of claims 1 to 4, wherein the lattice constant actuator device which is a lattice constant of a-axis. The actuator device according to any one of claims 1 to 5 is provided as pressure generating means for generating a pressure for discharging liquid in the pressure generating chamber from a nozzle opening in a pressure generating chamber formed on the substrate. Liquid ejecting head. A liquid ejecting apparatus comprising the liquid ejecting head according to claim 6 . On the upper side of an elastic film made of silicon dioxide (SiO ₂ ) on a silicon (Si) single crystal substrate, a lower electrode, a surface orientation (100) buffer layer made of a conductive material, zirconate titanate formed by epitaxial growth A method of manufacturing an actuator device including a piezoelectric layer having a plane orientation (100) made of lead (PZT) and a piezoelectric element made of an upper electrode, wherein the piezoelectric layer is formed on the buffer layer in a step of forming the piezoelectric layer. A composition graded layer in which the composition of the lead zirconate titanate precursor film formed is continuously changed in the thickness direction by firing after holding at 180 to 350 ° C. for a certain period of time before raising the temperature to 400 ° C. or higher. And a piezoelectric layer body made of lead zirconate titanate is laminated on the composition gradient layer, and the composition gradient layer and the piezoelectric layer body constitute the piezoelectric layer. Method of manufacturing an actuator device for.