JP2007039777A - Mask for film deposition, method for producing spontaneous light emitting panel, and spontaneous light emitting panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for film deposition whose deformation can be easily prevented, to provide a method for producing a spontaneous light emitting panel capable of forming a film deposition pattern at high precision, and to provide a spontaneous light emitting panel in which film deposition panels of high precision are formed. <P>SOLUTION: The mask 1 for film deposition comprises opening patterns 2 formed corresponding to the film deposition regions in an object to be film-deposited, and each opening pattern 2 comprises a reinforcing part 5 for preventing the deformation of the mask for film deposition. Concretely, by providing each opening part 3 with a projecting part 5b as the reinforcing part 5 toward the inside of the opening part, the rigidity (strength) of the mask increases, the deformation of the mask upon film deposition can be reduced, and the film deposition pattern can be formed at high precision. Further, the spontaneous light emitting panel having high display performance can be provided. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming mask, a method for manufacturing a self-luminous panel, and a self-luminous panel.

  There are various self-luminous elements such as LED (Light Emitting Diode), EL (Electroluminescence), FED (Field Emission Display), etc., and they are used for various purposes such as display and illumination. Has attracted attention as a self-luminous element capable of realizing an ultra-thin display, a plastic paper display, and the like by using a thin film laminated structure as a basic structure.

  Such a self-luminous element is formed by forming a first conductive layer on a substrate directly or via another layer, and laminating a film-forming layer including a light-emitting layer on the first conductive layer. A second conductive layer is formed on the first layer; and by applying a voltage between the first conductive layer and the second conductive layer, the first conductive layer and the second conductive layer are formed. Electrons are injected from the cathode side formed on one side, holes are injected from the anode side formed on the other of the first and second conductive layers, and light is emitted by recombination in the light emitting layer or the like. It is obtained.

When forming this film formation layer, for example, the film formation layer is formed by using a sheet-like (thin plate-like) film formation mask in which a predetermined opening pattern is formed on the substrate on which the first conductive layer is formed. The method of vapor-depositing is generally performed.
For example, Patent Document 1 discloses a shadow mask in which a reinforcing wire is provided on one side of a mask so that the mask is prevented from being deformed due to its own weight or internal stress during film formation.

JP-A-10-330910

  By the way, with the recent high-definition of the self-luminous panel, the film-forming mask has a high-definition opening pattern, the area of all the openings of the film-forming mask is increased, and the width between the openings is reduced. The rigidity (strength) of the mask has been lowered, and the opening of the mask has been deformed. For example, in an organic EL (electroluminescence) panel, multiple layers of film formation regions corresponding to the light emission region are stacked using multiple types of film formation masks in order to improve the light emission performance and increase the number of light emission colors. The film is formed in each film formation region for each color using a film formation mask. At this time, when the opening of the film formation mask is deformed, there is a problem that the display characteristics of the organic EL panel are deteriorated because a plurality of layers cannot be laminated with high accuracy because the film formation region is shifted. However, the mask described in Patent Document 1 described above requires a step of providing a separate reinforcing wire in order to prevent deformation of the mask, and a simpler method is desired.

  This invention makes it an example of a subject to cope with such a problem. That is, it is possible to provide a deposition mask that can more easily prevent deformation of the deposition mask, to provide a method for manufacturing a self-luminous panel that can form a deposition pattern with high accuracy, It is an object of the present invention to provide a self-luminous panel on which an accurate film formation pattern is formed.

In order to achieve such an object, the present invention comprises at least the configurations according to the following independent claims.
The film-forming mask of the invention according to claim 1 is a film-forming mask having an opening pattern, wherein the opening pattern has a reinforcing portion for preventing deformation of the film-forming mask.

  According to a seventh aspect of the present invention, there is provided a self-luminous panel manufacturing method comprising an opening pattern formed corresponding to a film formation region to be formed, wherein the opening pattern prevents deformation of the film formation mask. A first step of disposing a film-forming mask having a portion between the film-forming source and the self-light-emitting element substrate; and after the first step, from the film-forming source through the film-forming mask And a second step of forming a film formation layer on the self-luminous element substrate.

  The self-luminous panel of the invention according to claim 8 includes a first conductive layer formed directly on the substrate or via another layer, and a light-emitting layer laminated on the first conductive layer. A self-light-emitting panel including one or a plurality of self-light-emitting elements each having a film-forming layer and a second conductive layer formed on the film-forming layer, wherein the film-forming layer is a film formation target The film formation layer is formed through a film formation mask provided with an opening pattern formed corresponding to the film formation region, and the opening pattern having a reinforcing portion that prevents deformation of the film formation mask. It is characterized by that.

  A film formation mask according to an embodiment of the present invention has an opening pattern formed corresponding to a film formation region to be formed, and the opening pattern is a reinforcement that prevents deformation of the film formation mask. Part. That is, since the opening pattern is formed in a shape that prevents deformation of the film formation mask, the rigidity of the film formation mask is increased, and deformation of the film formation mask during film formation is prevented, The degree of deformation can be reduced. Specifically, for example, by forming a reinforcing portion having a convex shape toward the inside of the opening in the opening in the opening pattern, the rigidity is increased and deformation of the film-forming mask can be prevented. In addition, for example, by forming an opening pattern having the above-described shape by, for example, an etching process or a punching process without separately providing a reinforcing wire to prevent deformation, deformation of the deposition mask can be easily prevented. Further, deformation of the film formation mask can be reduced.

The method for manufacturing a self-luminous panel includes a first step of disposing a film-forming mask having the above-described configuration between a film-forming source and a self-light-emitting element substrate, and a film-forming mask after the first step. Through a second step of forming a film-forming layer on the self-light-emitting element substrate from the film-forming source, that is, by forming a film using a film-forming mask with a small degree of deformation. A film pattern can be formed.
In addition, by the above manufacturing method, for example, a first conductive layer formed directly on the substrate or via another layer, and a film-forming layer including a light-emitting layer laminated on the first conductive layer, A self-luminous panel including one or a plurality of self-luminous elements each having a second conductive layer formed on the film-forming layer, and formed corresponding to a film-forming region to be film-formed A self-luminous panel can be obtained in which a film formation layer is formed through a film formation mask that includes an opening pattern and the opening pattern includes a reinforcing portion that prevents deformation of the mask. That is, since the film formation layer is formed using the film formation mask with a small degree of deformation, a self-luminous panel having a highly accurate film formation pattern can be obtained. In addition, a self-luminous panel having high display performance can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The case where the film-forming mask according to the present invention is employed as a film-forming mask for color coating will be described. There are two types of film formation masks, for example, a slit method and a slot method. First, a slot type (matrix shape) deposition mask will be described.

[First Embodiment]
FIG. 1 is a view for explaining a film formation mask according to the first embodiment of the present invention. As shown in FIG. 1A, a film formation mask 1 according to this embodiment has an opening pattern 2 formed corresponding to a film formation region to be formed. The film formation mask 1 is made of, for example, a metal material, an inorganic material, an organic material, or the like, and is formed in a thin plate shape or a sheet shape.

As shown in FIG. 1A, for example, the slot type film formation mask 1 has a plurality of openings 3 in a matrix (lattice) for each pixel region corresponding to a film formation region to be formed. The pattern is formed. Here, for simplification of description, a plurality of openings 3 that are patterned in a matrix of 9 rows × 6 columns are shown. Further, the film formation mask 1 includes a beam portion 4 that partitions the opening 3 as shown in FIG. The opening pattern 2 formed in the film formation mask 1 has a reinforcing portion 5 that prevents deformation of the film formation mask 1.
For example, the opening 3J of a general film forming mask is formed in a substantially rectangular shape as shown in FIG. On the other hand, in the opening 3 according to the present embodiment, for example, as shown in FIG.

  The reinforcing portion 5 may have any shape that prevents deformation of the film-forming mask 1. For example, the reinforcing portion 5 may be formed adjacent to each opening 3 as shown in FIG. 1A, or may be formed adjacent to at least one opening 3 among the plurality of openings 3. Alternatively, it may be formed adjacent to the openings 3 arranged at a predetermined interval. The reinforcement part 5 which concerns on this embodiment consists of a convex part shape toward the inner side of the opening part 3, as shown in FIG.1 (b). More specifically, the reinforcing portion 5 includes a convex portion 5 a formed at the corner portion of the opening 3 and formed toward the inside of the opening 3. Since the reinforcing portion 5 is formed adjacent to the opening 3, for example, even if the width of the beam portion 4 is relatively narrow due to high definition and the area of the entire opening 3 is relatively large, the reinforcing portion Since the width of the portion corresponding to 5 is wide, the film formation mask 1 becomes highly rigid, and the deformation of the mask during film formation is reduced.

Specifically, as shown in FIG. 1B, the opening 3 includes a substantially rectangular first opening 3a formed in a width Lx1 along a prescribed direction (for example, the x-axis direction) and a prescribed direction. A second opening (narrow portion) 3b having a substantially rectangular shape is formed along the width Lx2. The reinforcing portion 5 is formed adjacent to the second opening 3b, and has a convex portion 5a having a width Lx3 along the specified direction. The total length of the width Lx2 and the width Lx3 corresponds to the length of the width Lx1.
Further, as shown in FIG. 1B, for example, the first opening 3a is formed with a width Ly1 along a direction (for example, the y-axis direction) orthogonal to the prescribed direction, and the second opening (width) The narrow portion 3b is formed with a width Ly2 along a direction orthogonal to the prescribed direction. At this time, the convex portion 5a of the reinforcing portion 5 is formed with a width Ly3 along a direction orthogonal to the prescribed direction. The total length of the width Ly <b> 1 and the width Ly <b> 2 corresponds to the length Ly <b> 3 of the longest portion along the direction orthogonal to the defined direction of the opening 3.
Further, the distance Lx4 along the prescribed direction between the adjacent openings 3 corresponds to the shortest width Lx4 among the widths along the prescribed direction of the beam part 4 as shown in FIG. The distance Ly4 along the direction perpendicular to the prescribed direction between the adjacent openings 3 is the shortest length of the widths along the direction perpendicular to the prescribed direction of the beam 4 as shown in FIG. Corresponds to Ly4.

  As described above, the reinforcing portion 5 is formed in the film formation mask 1 according to the present embodiment, and the maximum width Lx5 along the prescribed direction of the beam portion 4 is the width Lx4 and the width Lx3 of the reinforcing portion 5. The maximum width Ly5 along the direction orthogonal to the prescribed direction of the beam portion 4 corresponds to the total length of the width Ly4 and the width Ly2 of the reinforcing portion 5. Since the wide portion is formed by the reinforcing portion 5 and the beam portion 4 as described above, the rigidity of the entire film-forming mask 1 is increased, and deformation of the mask can be reduced.

  Further, the opening pattern 2 of the film formation mask 1 is formed by a predetermined process such as an etching process or a punching process. That is, the opening 3 and the reinforcing part 5 are formed by the same process. As described above, for example, the opening 3 having a pattern shape for realizing the reinforcing portion 5 can be easily formed without separately providing a reinforcing wire or the like for preventing deformation.

  Further, when the film-forming mask 1 according to the present invention is used as a film-forming mask when manufacturing an active drive type self-luminous panel, the reinforcing part 5 has a convex part 5a at a position corresponding to the TFT formation region. It is preferable to provide. Detailed description will be given later.

  FIG. 2 is a view for explaining the film forming mask and the mask holder shown in FIG. As shown in FIG. 2, the support member (mask holder) 6 has a flat portion 6a, and the film forming mask 1 shown in FIG. At this time, a tensile force is applied to the film-forming mask 1, and the film is attached to the flat portion 6a of the mask holder 6 with an adhesive or the like in a state where there is no deflection (a flattened state). Further, as shown in FIG. 2, for example, a position adjusting opening 7 is formed in the film forming mask 1. The position adjustment opening 7 is used as an index for adjusting the position of the film formation target substrate and the film formation mask 1 at the time of film formation, for example.

  FIG. 3 is a diagram for explaining a method of manufacturing a self-luminous panel using the film formation mask shown in FIGS. In a self-luminous panel according to an embodiment of the present invention, a first conductive layer is formed on a substrate directly or via another layer, and a film-forming layer including a light-emitting layer is formed on the first conductive layer. A film is formed, and a second conductive layer is formed on the film formation layer to form one or a plurality of self-luminous elements. For example, as shown in FIG. 3, a manufacturing apparatus that performs a film formation process of a film formation layer uses a film formation mask 1 in which an opening pattern corresponding to a film formation region 9A of a self-luminous element substrate 9 is formed. 8 and the self-luminous element substrate 9. Here, the film-forming mask 1 and the self-light-emitting element substrate 9 may be disposed in close contact or separated positions. Although not shown, the mask holder 6 and the film-forming mask 1 may be arranged in reverse, and the film-forming mask 1, the mask holder 6, and the self-light-emitting element substrate 9 may be arranged in this order from the film-forming source 8 side. Good.

Further, for example, as shown in FIG. 3, a mark 9 m for position adjustment is formed on the self-light emitting element substrate 9, and a film forming mask is used with reference to the position of the mark 9 m and the position adjustment opening 7. 1 and the self-luminous element substrate 9 are adjusted in position. For example, the mark 9 m and / or the position adjusting opening 7 is irradiated with light, and the light from the mark 9 m and the adjusting opening 7 is received by the light receiving unit 79. The position of the element substrate 9 is adjusted. After the deployment, a film formation layer 8 a is formed on the self-luminous element substrate 9 from the film formation source 8 through the film formation mask 1.
Since the film formation mask 1 has the opening 3 and the position adjustment opening 7 according to the present invention, and the position adjustment opening 7 performs the position adjustment with high accuracy at the time of film formation, the film formation pattern with high accuracy. Can be formed. Further, even when it is necessary to replace the film-forming mask 1 having a different opening pattern for different colors for each emission color, the replacement can be performed in a short time, and the manufacturing time can be shortened. it can. Further, even when the film formation mask 1 and the self-light emitting element substrate 9 are formed while relatively moving in parallel with each other at a predetermined interval, the position adjustment can be performed in a short time, and the manufacturing time can be shortened. Can be realized. Further, even in the case where film formation is performed for each color in the film formation region for each color, film formation is performed while highly accurate position adjustment is performed using the film formation mask 1 having a low degree of deformation. Therefore, it is possible to obtain a self-luminous panel with high display performance without color misregistration.

FIG. 4 is a view for explaining an embodiment of the self-luminous panel according to the present invention. FIG. 4A is a diagram for explaining a self-luminous panel formed using the film-forming mask shown in FIG. FIG. 4B is an enlarged view for explaining one pixel shown in FIG. On the self-light emitting element substrate 9, for example, as shown in FIGS. 4A and 4B, a film formation layer 8b is formed for each film formation region (pixel region) to be formed. The film formation layer 8b is formed through the film formation mask 1 as described above.
For example, when forming the active drive type self-luminous panel 10, TFTs (Thin Film Transistors) are formed in advance on the self-luminous element substrate 9 in units of pixels, and film formation is performed using the film formation mask 1 having the above-described configuration. As a result, the TFT formation region 11 is masked by the convex portion 5 a of the reinforcing portion 5, and no film formation layer is formed in the TFT formation region 11. For this reason, it can reduce forming a film-forming layer uselessly.
That is, the film formation mask 1 has a plurality of openings 3 formed in a matrix corresponding to the pixel region to be formed, and formed at the corners of the openings 3 toward the inside of the openings 3. A convex portion 5a is formed as the reinforcing portion 5, and a film formation pattern 8c corresponding to the film formation mask 1 is formed on the film formation layer 8b, and is formed at the corner of the film formation portion 8d in the film formation pattern 8c. A concave portion 8e corresponding to the convex portion 5a is formed.

  As described above, the film formation mask 1 having the opening pattern corresponding to the film formation region to be formed and having the reinforcing portion that prevents the mask from being deformed is formed. A film forming layer is formed on the light emitting element substrate 9 from the film forming source 8 through the film forming mask 1 after the first process disposed between the light source and the light emitting element substrate and the first process. Since the second step is performed, a highly accurate film forming pattern can be obtained by a simple step, and a self-luminous panel having a highly accurate display performance can be obtained. Further, by forming a film for each color in a film formation region for each color using the film formation mask 1, a self-luminous panel having high display performance without color misregistration can be obtained.

[Second Embodiment]
FIG. 5 is a view for explaining a film formation mask according to the second embodiment of the present invention. Description of parts common to the first embodiment and the second embodiment is omitted. In the film formation mask 1a according to the present embodiment, as shown in FIG. 5, for example, a plurality of openings 3 are formed in a matrix, and the positions of the reinforcing portions 5 formed in the openings 3 are line by line. Different. Specifically, as shown in FIG. 5, the openings 3 in the odd-numbered rows are formed with the reinforcing portions 5 in the lower left corners as viewed in the figure, and the openings 3 in the even-numbered rows are formed in the lower right corners as viewed in the drawings. The reinforcement part 5 is formed in the part. The position of the reinforcement part 5 is not restricted to the form mentioned above. For example, the position of the reinforcing portion 5 may be reversed between the even-numbered row and the odd-numbered row, may be different for each column, or may be formed at any one of the four corner portions, for example. Further, it may be formed at a random position adjacent to the opening 3.

[Third Embodiment]
FIG. 6 is a view for explaining a film formation mask according to the third embodiment of the present invention. FIG. 6A is a view for explaining a slit-type mask. FIG. 6B is an enlarged view of a part of the slit shown in FIG. As shown in FIG. 6A, the slit type film formation mask 1b according to the present embodiment has an opening pattern 2b in which a plurality of openings 3b are formed in a slit shape. Further, as shown in FIGS. 6A and 6B, one or a plurality of film formation masks 1b are formed along the longitudinal direction of the opening 3b, and the convex shape is directed toward the inside of the opening 3b. It has the reinforcement part 5b which consists of. Specifically, the film-forming mask 1b is formed with a reinforcing portion 5b adjacent to the opening 3b at one end and at a specified interval Ly21. For example, the reinforcing portion 5b preferably includes a convex portion for each pixel region to be deposited as shown in FIG.
More specifically, as shown in FIG. 6A, the film formation mask 1b has a plurality of openings 2b arranged along a prescribed direction (for example, the x-axis direction). As shown in FIG. 6A, the reinforcing portion 5b is formed with a specified number of reinforcing portions 5b along a direction orthogonal to the specified direction (for example, the y-axis direction). The width Lx11 along the prescribed direction of the reinforcing portion 5b is set shorter than the width Lx12 along the prescribed direction of the opening 2b.
Further, the distance Lx21 along the prescribed direction between the adjacent openings 3 corresponds to the shortest width Lx21 among the widths along the prescribed direction of the beam part 4 as shown in FIG. In addition, the maximum width Lx22 along the prescribed direction of the beam portion 4 corresponds to the total length of the width Lx21 and the width Lx11 of the reinforcing portion 5b. Since the wide portion is formed by the reinforcing portion 5 and the beam portion 4 as described above, the rigidity of the entire film formation mask 1b is increased, and deformation of the film formation mask can be reduced.

  FIG. 7 is a view for explaining an embodiment of the self-luminous panel according to the present invention. FIG. 7A is a diagram for explaining a self-luminous panel formed using the film formation mask shown in FIG. FIG. 7B is an enlarged view for explaining the pixel shown in FIG. For example, when a film is formed using the film-forming mask 1b when manufacturing a passive drive type self-luminous panel, the self-luminous element substrate 9b is formed on the self-luminous element substrate 9b as shown in FIGS. A film formation layer 8b is formed for each film formation region to be formed. More specifically, the first conductive layer and the partition wall 11 are formed on the self-light-emitting element substrate 9, and the film is formed through the film-forming mask 1b, so that the structure shown in FIGS. As shown, a film formation layer 8 b is formed for each film formation region (pixel region) other than the partition wall 11. Further, as shown in FIG. 7A, an auxiliary wiring 81 is formed at the lower end of the film formation layer 8b.

  Further, as described above, the film-forming mask 1 b has a plurality of reinforcing portions 5 that are formed along the longitudinal direction of the opening 3 and have a convex shape toward the inside of the opening 3. Specifically, in the film formation mask 1b, a plurality of openings 3 are formed in a slit shape corresponding to the pixel region to be formed, and the reinforcing portions 5b are formed adjacent to the openings 3b at a specified interval Ly21. In the film formation layer 8b, a film formation pattern 8c is formed corresponding to the film formation mask 1b and the partition wall 11, and the reinforcing portion 5b is formed at the corner of the film formation portion 8d in the film formation pattern 8c. A recess 8e corresponding to is formed.

  As described above, the opening pattern 2 of the film formation mask 1b according to the present embodiment has a plurality of openings 3b formed in a slit shape, and serves as a reinforcing portion 5b. Since the convex portion is formed for each pixel region to be deposited, the rigidity is higher than that of the deposition mask without the reinforcing portion 5b, and deformation during deposition can be reduced. In addition, as described above, even when a passively driven self-luminous panel is manufactured, a film formation layer having a highly accurate film formation pattern is formed by using the film formation mask 1b according to the present invention. Can do.

[Fourth Embodiment]
FIG. 8 is a view for explaining a film formation mask according to the fourth embodiment of the present invention. Description of parts common to the third and fourth embodiments is omitted. As shown in FIG. 8, for example, the film formation mask 1c according to this embodiment has an opening pattern 2c in which a plurality of openings 3c are formed in a slit shape. Further, as shown in FIG. 8, the film formation mask 1 c includes reinforcing portions 5 c that are alternately adjacent to the opening 3 c at both end portions at a specified interval Ly <b> 22. Thus, by alternately forming the reinforcing portions 5c at both ends of the opening 3, it is possible to obtain higher rigidity than when the reinforcing portions are formed only at one end side, and the mask at the time of film formation can be obtained. Deformation can be further reduced.

[Fifth Embodiment]
FIG. 9 is a view for explaining the positional relationship between the film forming mask and the light emitting region according to the fifth embodiment of the present invention. For example, as shown in FIG. 9, during the film formation process, a film formation layer is formed on the self-luminous element substrate 9 from the film formation source through the opening 3 of the film formation mask 1. At this time, a mask having a different opening pattern may be arranged for each color for color coating, or coating is performed while relatively moving the film-forming mask 1 and the self-light-emitting element substrate 9 by a specified distance in a specified direction. Dividing may be performed. By doing so, it is possible to obtain a film-forming pattern with high accuracy for each color, and to obtain a self-luminous panel with high display performance without color misregistration.

  Hereinafter, a specific example of a manufacturing method in the case where the above-described self-luminous panel is an organic EL panel will be described. As the manufacturing apparatus, the above-described apparatus is used, and thereby a film forming process for forming a film forming layer is performed in the manufacturing process of the organic EL panel.

First, the film-forming mask 1 according to the present invention is immersed in a tank filled with acetone and pure water, subjected to ultrasonic cleaning, and then held in a constant temperature bath having a room temperature of about 100 ° C. and dried. Let Fix the cleaned film formation mask to the film formation mask holder without bending, and prepare the film formation mask so that it can be used in the evaporation apparatus. ). An ITO (lower electrode) of about 110 nm is formed on a glass substrate by sputtering. Next, an ITO electrode is patterned in a lattice shape using a photoresist by a photolithography method, and an insulating film is formed on the substrate on which the ITO electrode is formed.
Next, a positive resist material having a high electrical insulation function is applied on the substrate, and a film is formed, for example, by spin coating. After film formation, the substrate is heated at about 100 ° C. for about 80 seconds to volatilize the solvent, and then exposed with an exposure apparatus through a photomask under irradiation conditions of about 50 mJ / cm ² and then developed with an alkaline aqueous solution. Then, heat treatment is performed in a constant temperature and humidity chamber at a temperature of about 300 ° C. to pattern the insulating film. Next, the substrate on which the insulating film is formed is irradiated with UV / ozone for about 10 minutes, and then heated for about 10 minutes with a hot plate having a temperature of about 300 ° C., and then transferred to a vacuum chamber (preparation tank). The deposition mask placed in the vacuum chamber is transferred to the vapor deposition chamber. The substrate is transferred from the vacuum chamber to the deposition chamber. The position of the opening of the film formation mask and the display area on the substrate are adjusted with high accuracy, and the distance between the substrate and the film formation mask is adjusted after the position adjustment.
Next, an organic EL element is formed in the film formation region. For example, the hole injection layer material, for example, CuPC is about 25 nm, the hole transport layer material, for example, α-NPD is about 45 nm, the light emitting layer material, for example, Alq 3 is about 60 nm, and the electron injection layer material, for example, LiF is about 0.5 nm. Film formation is performed in a vacuum chamber by resistance heating to a thickness.
In the vacuum chamber, a shadow mask for the cathode is applied, and striped aluminum (upper electrode) perpendicular to the ITO stripe is deposited in the vacuum chamber to a thickness of 100 nm at a rate of 1 nm per second by resistance heating. I do. Next, the substrate on which the organic EL element is formed is transferred to a sputtering film forming chamber. After the transfer, a sealing film having a thickness of about 100 nm made of SiON is formed by sputtering, and the self-luminous panel according to the present invention is manufactured. In addition, a drive driver, a power supply circuit, a control circuit, and the like are provided on the self light emitting panel to manufacture a self light emitting display device.

The present invention is not limited to the embodiment described above. You may combine each embodiment mentioned above.
Hereinafter, with reference to FIG. 10, a specific configuration will be described by taking an organic EL panel as an example of the above-described self-luminous panel.
The basic configuration of the organic EL panel 100 is that a plurality of film formation layers 133 are sandwiched between a first electrode (first conductive layer) 131 and a second electrode (second conductive layer) 132 on the support substrate 110. The organic EL element 130 is formed. In the illustrated example, the SiO ₂ coating layer 120a is formed on the support substrate 110, the first electrode 131 formed thereon is set as an anode made of a transparent electrode such as ITO, and the second electrode 132 is made of Al. A bottom emission method is adopted in which light is extracted from the support substrate 110 side by setting a cathode made of a metal material such as the above. In addition, as the film formation layer 133, an example of a three-layer structure of a hole transport layer 133A, a light emitting layer 133B, and an electron transport layer 133C is shown. Then, the sealing region S is formed by bonding the support substrate 110 and the sealing member 111 in an inert gas atmosphere such as nitrogen through the adhesive layer 112, and the organic EL element 130 is formed in the sealing region S. The self-luminous element part which consists of is formed.

  In the illustrated example, the self-light emitting element unit composed of the organic EL element 130 has a first electrode 131 partitioned by an insulating layer 134, and a unit display area by each organic EL element 130 below the partitioned first electrode 131. (130R, 130G, 130B) are formed. In addition, a drying unit 140 is attached to the inner surface of the sealing member 111 that forms the sealing region S to prevent the organic EL element 130 from being deteriorated due to moisture.

  In addition, a first electrode layer 121A formed by the same material and in the same process as the first electrode 131 is formed on the extraction region 110A formed at the end of the support substrate 110, and the insulating layer 134 is separated from the first electrode 131. The pattern is formed in an insulated state. A second electrode layer 121B for forming a low resistance wiring portion containing a silver alloy or the like is formed on the lead wiring portion of the first electrode layer 121A. Further, if necessary, protection such as IZO or the like is provided. A coating 121C is formed to form a lead-out wiring portion 121 including the first electrode layer 121A, the second electrode layer 121B, and the protective coating 121C. The end 132 a of the second electrode 132 is connected to the lead-out wiring 121 at the inner end of the sealing region S.

Although the drawing wiring of the first electrode 131 is not shown, it can be formed by extending the first electrode 131 and pulling it out of the sealing region S. In this lead wiring, as in the case of the second electrode 132 described above, an electrode layer for forming a low resistance wiring portion containing an Ag alloy or the like can also be formed.
An end edge 111E0 of the sealing member 111 facing the lead-out wiring part 121 is formed by a hole processing edge processed before the support substrate 110 and the sealing member 111 are bonded together.

Hereinafter, details of the organic EL panel 100 will be described more specifically.
a. electrode;
One of the first electrode 131 and the second electrode 132 is set on the cathode side, and the other is set on the anode side. The anode side is made of a material having a higher work function than the cathode side, and a metal film such as chromium (Cr), molybdenum (Mo), nickel (Ni), platinum (Pt), or a transparent conductive film such as ITO or IZO is used. . Conversely, the cathode side is made of a material having a lower work function than the anode side, such as alkali metals (Li, Na, K, Rb, Cs), alkaline earth metals (Be, Mg, Ca, Sr, Ba), rare earth metals, etc. Further, a metal having a low work function, a compound thereof, an alloy containing them, an amorphous semiconductor such as doped polyaniline or doped polyphenylene vinylene, or an oxide such as Cr2O3, NiO, or Mn2O5 can be used. In the case where both the first electrode 131 and the second electrode 132 are made of a transparent material, a configuration in which a reflective film is provided on the electrode side opposite to the light emission side can also be adopted.

  A drive circuit component and a flexible wiring board for driving the organic EL panel 100 are connected to the lead wiring part (the lead wiring part 121 and the lead wiring of the first electrode 131 shown in the figure). Preferably, as described above, a low-resistance metal electrode layer such as an Ag alloy or APC, Cr, or Al can be laminated, or these low-resistance metal electrodes can be formed alone.

b. Deposition layer;
The film formation layer 133 is composed of a single layer or a multilayer film including at least a light emitting layer, but the layer structure may be formed in any manner. In general, as shown in FIG. 10, a layer in which a hole transport layer 133A, a light emitting layer 133B, and an electron transport layer 133C are stacked from the anode side to the cathode side can be used. The hole transport layer 133A and the electron transport layer 133C may be provided not only by one layer but also by stacking a plurality of layers. For the hole transport layer 133A and the electron transport layer 133C, either layer may be omitted, The layer may be omitted. It is also possible to insert an organic material layer such as a hole injection layer or an electron injection layer depending on the application. For the hole transport layer 133A, the light emitting layer 133B, and the electron transport layer 133C, a conventionally used material (regardless of a polymer material or a low molecular material) can be appropriately selected and employed.
In the light-emitting material forming the light-emitting layer 133B, either emission (fluorescence) when returning from the singlet excited state to the ground state or emission (phosphorescence) when returning from the triplet excited state to the ground state is performed. It may be adopted.

c. Sealing member;
In the organic EL panel 100, as the sealing member 111 for hermetically sealing the organic EL element 130, a plate-like member made of glass, plastic, metal, or the like can be used. It is possible to use a glass sealing substrate in which a concave portion for sealing (regardless of one-stage digging or two-stage digging) is formed by processing such as press molding, etching, blasting, or flat glass. The sealing region S can be formed between the supporting substrate 110 and a spacer made of glass (or plastic). Moreover, you may utilize the airtight sealing method which forms the sealing area | region S with the above sealing members, for example, what filled up fillers, such as resin and silicone oil, etc. in the sealing area S, for example, resin A solid sealing method in which a film and a metal foil are sealed, or a film sealing method in which the organic EL element 130 is sealed with a barrier film or the like may be used.

d. adhesive;
As the adhesive forming the adhesive layer 112, a thermosetting type, a chemical curing type (two-component mixing), a light (ultraviolet) curing type, or the like can be used, and an acrylic resin, epoxy resin, polyester, polyolefin, or the like is used as a material. Can be used. In particular, it is preferable to use an ultraviolet curable epoxy resin adhesive that does not require heat treatment and has high immediate curing properties.

e. Drying means;
The drying means 140 includes a physical desiccant such as zeolite, silica gel, carbon and carbon nanotube, a chemical desiccant such as alkali metal oxide, metal halide and chlorine peroxide, and an organometallic complex in toluene, xylene and aliphatic organic. It can be formed with a desiccant dissolved in a petroleum solvent such as a solvent, a desiccant in which desiccant particles are dispersed in a binder such as polyethylene, polyisoprene, and polyvinyl cinnaate having transparency.

f. Various types of organic EL panels;
As the organic EL panel 100 which is an embodiment of the present invention, various design changes can be made without departing from the gist of the present invention. For example, the light emission form of the organic EL element 130 may be a bottom emission method in which light is extracted from the support substrate 110 side as described above, or a top emission method in which light is extracted from the sealing member 111 side (in this case, the sealing member 111). A multi-photon structure may be adopted. Further, the organic EL panel 100 may be a single color display or a multi-color display. In order to realize the multi-color display, the organic EL panel 100 includes a single color display method as well as a single color display such as white or blue. A method in which a color conversion layer made of a color filter or a fluorescent material is combined with an organic EL panel having one or more organic EL elements having light emission (CF method, CCM method), and unit display areas of two or more colors are stacked vertically. A method that forms unit display areas (SOLED (transparent stacked OLED) method), a laser transfer method that deposits low molecular organic materials of different emission colors on different films in advance and transfers them onto a single substrate by laser thermal transfer, Etc. can be adopted. In the illustrated example, a passive drive method is shown. However, an active drive method is adopted in which a TFT substrate is adopted as the support substrate 110, a planarization layer is formed thereon, and the first electrode 131 is formed thereon. May be adopted.

As described above, the film formation mask 1 according to the present invention has the opening pattern 2 formed corresponding to the film formation region to be formed, and this opening pattern 2 is the film formation mask 1. It has the reinforcement part 5 which prevents deformation | transformation. That is, since the opening pattern 2 is formed in a shape that prevents the deformation of the mask, the rigidity of the mask is increased, the deformation of the mask during film formation can be prevented, and the deformation of the mask can be reduced. .
Specifically, for example, by providing the convex portion 5b as the reinforcing portion 5 in the opening portion 3 in the opening pattern 2 toward the inside of the opening portion 3, the rigidity becomes high and the mask can be prevented from being deformed. Further, for example, without providing a reinforcing wire separately for preventing deformation, the opening pattern forms a reinforcing portion that prevents the deformation of the mask by, for example, an etching process or a punching process, thereby easily preventing the deformation of the mask. And deformation of the mask can be reduced. In addition, when using a TFT-mounted substrate, there has been an opening so as to correspond to the position of the TFT, but by using the opening as a reinforcing part, the rigidity of the film-forming mask can be reduced without narrowing the light emitting area. It has become possible to improve the electrical characteristics such as display performance and life of the panel.
Although the reinforcing part adjacent to the opening is described in the above embodiment, it is not particularly limited to this.

In addition, in the method for manufacturing the self-luminous panel, the film-forming mask 1 having the above-described configuration is disposed between the film-forming source 8 and the self-light-emitting element substrate 9, and the film is formed after the first step. A second step of forming a film-forming layer on the self-light-emitting element substrate 9 from the film-forming source 8 through the mask for mask 1, that is, using the film-forming mask with a small degree of deformation of the mask. By doing so, a film formation pattern can be formed with high accuracy. In addition, since a film formation pattern can be formed with high accuracy for each color, a self-luminous panel with high display performance without color misregistration can be obtained. Further, by forming a film-forming layer having a multilayer structure using the film-forming mask 1 according to the present invention, a self-luminous panel with high-performance display performance can be obtained. Further increase in rigidity suppresses damage to electrical characteristics such as a short circuit between electrodes due to the film formation mask coming into contact with the substrate while the film formation layer or conductive layer is being formed. Is possible.
In addition, by the above manufacturing method, for example, a first conductive layer formed directly on the substrate or via another layer, and a film-forming layer including a light-emitting layer laminated on the first conductive layer, A self-luminous panel having a second conductive layer formed on the film-forming layer, the film-forming layer having an opening pattern formed corresponding to the film-forming region to be formed; It is possible to obtain a self-luminous panel in which the opening pattern 2 is formed through a film forming mask provided with a reinforcing portion that prevents deformation of the mask. That is, since the film formation layer is formed using the film formation mask with a small degree of deformation, a self-luminous panel having a highly accurate film formation pattern can be obtained.

  In general, a slot-type film formation mask has a large mask rigidity (strength), but position adjustment is difficult. A slit-type film formation mask has a large opening and easy position adjustment, but the mask rigidity ( (Strength) is small. On the other hand, the film-forming mask 1 according to the present invention can have the advantages of the general slot-type and slit-type film-forming masks that the rigidity (strength) of the mask is large and the position adjustment is easy.

It is a figure for demonstrating the film-forming mask which concerns on 1st Embodiment of this invention. (A) is a figure for demonstrating the film-forming mask 1, (b) is an enlarged view of an opening part, (c) is an enlarged view of the opening part of a general film-forming mask. It is a figure for demonstrating the film-forming mask and mask holder shown in FIG. It is a figure for demonstrating the manufacturing method of the self-light emission panel using the film-forming mask shown in FIG. It is a figure for demonstrating one Embodiment of the self-light-emitting panel which concerns on this invention. (A) is a figure for demonstrating the self-light-emitting panel formed into a film using the film-forming mask shown in FIG. 2, (b) is an expansion for demonstrating one pixel shown in (a). FIG. It is a figure for demonstrating the film-forming mask which concerns on 2nd Embodiment of this invention. It is a figure for demonstrating the film-forming mask which concerns on 3rd Embodiment of this invention. (A) is a figure for demonstrating a slit type | mold mask, (b) is the figure which expanded a part of slit shown to (a). It is a figure for demonstrating one Embodiment of the self-light-emitting panel which concerns on this invention. (A) is a figure for demonstrating the self-light-emitting panel formed into a film using the film-forming mask shown in FIG. (B) is an enlarged view for explaining the pixel shown in (a). It is a figure for demonstrating the film-forming mask which concerns on 4th Embodiment of this invention. It is a figure for demonstrating the positional relationship of the film-forming mask which concerns on 5th Embodiment of this invention, and a light emission area | region. It is a figure for demonstrating the self-light-emitting panel which concerns on other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Film-forming mask 2 Opening pattern 3 Opening part 4 Beam part 5 Reinforcement part 6 Support member (mask holder)
10 Self-luminous panel

Claims (10)

A film forming mask having an opening pattern,
The film formation mask, wherein the opening pattern includes a reinforcing portion for preventing deformation of the film formation mask. The opening pattern has a plurality of openings formed in a matrix.
The film-forming mask according to claim 1, wherein the reinforcing portion has a convex shape that is formed at a corner portion of the opening and faces the inside of the opening.   The film-forming mask according to claim 2, wherein the protrusion has a shape corresponding to a pixel region to be deposited.   The film-forming mask according to claim 2, wherein the reinforcing portion is formed with the convex shape at a position corresponding to a TFT formation region. The opening pattern has a plurality of openings formed in a slit shape,
The film-forming mask according to claim 1, wherein one or a plurality of the reinforcing portions are formed along a longitudinal direction of the opening and have a convex shape facing the inside of the opening.   The film forming mask according to claim 5, wherein the protrusion has a shape corresponding to a pixel region to be formed. A film formation mask having an opening pattern formed corresponding to a film formation region to be formed and having a reinforcing portion that prevents the film formation mask from being deformed, and a film formation source and a self-light emitting A first step of disposing between the element substrate;
And a second step of forming a film-forming layer on the self-light-emitting element substrate from the film-forming source through the film-forming mask after the first step. Method. A first conductive layer formed on the substrate directly or via another layer; a film-forming layer including a light-emitting layer laminated on the first conductive layer; and A self-light-emitting panel comprising one or a plurality of self-light-emitting elements each having a formed second conductive layer,
The film-forming layer includes an opening pattern formed corresponding to a film-forming region to be formed, and the opening pattern includes a film-forming mask provided with a reinforcing portion that prevents deformation of the film-forming mask. A self-luminous panel, characterized in that the film-forming layer is formed therebetween. The film formation mask has a plurality of openings formed in a matrix corresponding to the pixel region to be formed,
The reinforcing part is formed at a corner of the opening and has a convex shape facing the inside of the opening,
9. The film formation layer, wherein a film formation pattern corresponding to the film formation mask is formed on a substrate, and a concave portion corresponding to the convex portion shape is formed in the film formation pattern. Self-luminous panel as described in 1. The film formation mask has a plurality of openings formed in a slit shape,
The reinforcing portion is formed in a plurality of shapes along the longitudinal direction of the opening and has a convex shape toward the inside of the opening.
In the film formation layer, a film formation pattern corresponding to the film formation mask is formed on a substrate, and a concave portion corresponding to the shape of the protrusion of the film formation mask is formed in the film formation pattern. The self-luminous panel according to claim 8.

Images