JP2007024969A - Method for manufacturing structure in cell, structure in cell, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure in a cell with high definition by decreasing variance in resolution or irregular density of the pattern formed on the exposure face of a photosensitive layer without using a photomask, to provide a structure in a cell with high definition manufactured by the above method for manufacturing a structure in a cell, and to provide a display device using the structure in a cell. <P>SOLUTION: The method for manufacturing the structure in the cell includes: an exposure step of exposing a photosensitive layer comprising a photosensitive composition containing at least a binder and placed on a substrate surface by using the following exposure head and relatively moving the exposure head in a scanning direction, wherein the exposure head is disposed with the column direction of pixel parts arranged in a matrix forming a predetermined set tilted angle θ with respect to the scanning direction of the exposure head, and pixel parts are controlled in such a manner that pixel parts to be used for N-time multiple exposure in the exposure head are designated and that only the designated pixel parts participate exposure; and a developing step of developing the exposed photosensitive layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for producing an in-cell structure capable of producing at least one of a pillar (spacer), a liquid crystal alignment control protrusion, a stacked pillar, and an insulating film with high resolution, an in-cell structure, and The present invention relates to a display device using the in-cell structure.

  In recent years, a liquid crystal display (LCD) has been most widely used as a flat panel display to replace a CRT (Cathode-Ray Tube) display, and the expectation is also high. Among them, the thin film transistor (TFT) type LCD (TFT-LCD) is expected to further expand the market by application to personal computers, word processors, OA devices, portable televisions, etc. There is a need for further improvement in image quality.

Currently, the most widely used method among TFT-LCDs is a normally white mode TN (Twisted Nematic) type LCD. However, the TN type LCD has a narrow viewing angle, and the display state varies depending on the position where the display screen is observed.
The problem with this TN type LCD is that the LCD (for example, a simple matrix type or a plasma addressed type LCD) capable of displaying a liquid crystal between a pair of substrates having electrodes and applying a voltage between the electrodes. Is a similar problem.

As a means for solving the above-described drawbacks, a technique for forming protrusions on the liquid crystal layer has been proposed. Such protrusions are formed to control the alignment of the liquid crystal and are referred to as liquid crystal alignment control protrusions. The protrusions locally incline the alignment state of the liquid crystal molecules along the surface, and even when observed obliquely with respect to the liquid crystal surface, the same display state as when the liquid crystal surface is observed from the front To widen the viewing angle.
As such a technique, for example, a technique for forming a liquid crystal alignment control protrusion using a phenol novolac resin has been proposed (see Patent Document 1).

In general, a liquid crystal display device includes a liquid crystal layer having a predetermined orientation between a pair of substrates, and maintaining the spacing between the substrates, that is, the thickness of the liquid crystal layer, can improve image quality. decide. Spacers (columns) are used to keep the liquid crystal layer thickness constant.
Further, the insulating film is for a high aperture structure (HA structure) with a high aperture ratio, and has a structure in which the pixel electrode and the TFT are connected by a contact hole disposed on the TFT substrate. In the field of display devices, since there is a tendency to improve productivity by performing multi-faceting using a large substrate, the liquid crystal alignment control protrusions and the pillars (spacers) have very high positions. In addition to the requirement for accuracy, along with the high definition of liquid crystal displays, it is required to reduce the occupied area by fine patterning.

As a method for forming the structure in the cell such as the column (spacer), the liquid crystal alignment control protrusion, and the insulating film, generally, a photolithographic method is used in which a fine pattern is formed by exposing and developing a photosensitive composition. It has been known.
As an exposure apparatus for performing the photolithography method, patterning is performed by directly scanning laser light such as a semiconductor laser or a gas laser on the photosensitive composition based on digital data such as a wiring pattern without using a photomask. An exposure apparatus using a laser direct imaging system (hereinafter sometimes referred to as “LDI”) to be performed has been studied (for example, see Non-Patent Document 1).

In the exposure head of the exposure apparatus, a single exposure may be performed depending on the configuration of the light source array, such as when a digital micromirror device (DMD) having a generally available size is used as the spatial light modulation element. It is difficult to cover a sufficiently large exposure area with the head. For this reason, there has been proposed an exposure apparatus in which a plurality of the exposure heads are used in parallel and the exposure heads are inclined with respect to the scanning direction.
For example, in Patent Document 2, a plurality of exposure heads each having a DMD in which micromirrors are arranged in a rectangular lattice shape are inclined with respect to the scanning direction, and triangular portions on both sides of the inclined DMD are provided as follows: An exposure apparatus is described in which each exposure head is attached in such a manner that the DMDs adjacent to each other in the direction orthogonal to the scanning direction complement each other.
In Patent Document 3, a plurality of exposure heads having a rectangular grid DMD are not tilted with respect to the scanning direction or tilted by a small angle, and exposure is performed by a DMD adjacent in a direction perpendicular to the scanning direction. Each exposure head is mounted with a setting such that the regions overlap each other by a predetermined width, and the number of micromirrors to be driven is gradually decreased or increased at a constant rate at a portion corresponding to the overlapping portion between the exposure regions of each DMD. An exposure apparatus is described in which an exposure area by each DMD has a parallelogram shape.

  However, when exposure is performed with a plurality of exposure heads inclined with respect to the scanning direction, it is generally difficult to finely adjust the relative position and relative mounting angle between the exposure heads. There is a problem that it shifts slightly.

On the other hand, in order to improve resolution, etc., the exposure head is used such that the scanning line of the light beam from one picture element part coincides with the scanning line of the light ray from another picture element part. There has been proposed an exposure apparatus of a multiple exposure type in which each point on an exposed surface of a photosensitive layer made of an object is substantially overlapped and exposed multiple times.
For example, Patent Document 4 discloses that a plurality of micromirrors (picture element units) are provided in order to improve the resolution of a two-dimensional pattern formed on an exposure surface and to express a pattern including a smooth diagonal line. An exposure apparatus is described in which rectangular DMDs arranged in a dimension are inclined with respect to the scanning direction so that exposure spots from adjacent micromirrors partially overlap on the exposure surface.
Further, Patent Document 5 uses a rectangular DMD that is inclined with respect to the scanning direction, thereby superimposing exposure spots on the exposure surface to change the total illumination chromaticity, An exposure apparatus capable of suppressing an imaging error due to a factor such as a partial defect of a microlens is described.

However, even in the case of performing the multiple exposure, the exposure head density and arrangement at the location on the exposed surface of the photosensitive layer to be exposed, due to the mounting angle of the exposure head deviating from the ideal setting inclination angle. However, this is different from other portions, and there is a problem that the resolution and density of the image to be formed are uneven, and the edge roughness is increased in the formed pattern.
Further, it is caused not only by a shift in the mounting position and mounting angle of the exposure head, but also by various aberrations of the optical system between the image element and the exposed surface of the photosensitive layer, distortion of the image element itself, and the like. Pattern distortion also causes unevenness in the resolution and density of the pattern formed on the exposed surface of the photosensitive layer.

  In order to solve these problems, a method for improving the adjustment accuracy of the mounting position and angle of the exposure head, the adjustment accuracy of the optical system, and the like can be considered. However, if improvement in accuracy is pursued, the manufacturing cost becomes very high. There is a problem of end. Similar problems can occur not only in the exposure apparatus but also in various drawing apparatuses such as an ink jet printer.

  Therefore, a pattern caused by a shift in the mounting position or mounting angle of the exposure head, various aberrations of the optical system between the image element and the exposed surface of the photosensitive layer, distortion of the image element itself, and the like. By smoothing out the effects of variations in exposure due to distortion and reducing variations in resolution and density of the pattern formed on the exposed surface of the photosensitive layer, pillars (spacers), liquid crystal alignment control protrusions, Manufacturing method capable of forming in-cell structure such as stacked column and insulating film with high definition, high-definition in-cell structure manufactured by manufacturing method of in-cell structure, and display using the in-cell structure The device has not been provided yet, and the present situation is that further improvement and development is desired.

JP 2002-122858 A Japanese Patent Laid-Open No. 2004-9595 JP 2003-195512 A US Pat. No. 6,493,867 Special table 2001-500628 gazette Akihito Ishikawa “Development shortening and mass production application by maskless exposure”, “Electrotronics Packaging Technology”, Technical Research Committee, Vol.18, No.6, 2002, p.74-79

  This invention is made | formed in view of this present condition, and makes it a subject to solve the said various problems in the past and to achieve the following objectives. That is, the present invention relates to a manufacturing method capable of forming in-cell structures such as columns (spacers), liquid crystal alignment control protrusions, overlapping columns, and insulating films with high definition without using a photomask, and the inside of the cells. An object of the present invention is to provide a high-definition cell structure manufactured by the structure manufacturing method and a display device using the cell structure.

Means for solving the problems are as follows. That is,
<1> Consisting of a photosensitive composition containing at least a binder, for the photosensitive layer located on the surface of the substrate,
A light irradiating means, and n (where n is a natural number of 2 or more) two-dimensionally arranged picture elements that receive and emit light from the light irradiating means, and according to the pattern information, An exposure head provided with a light modulation means capable of controlling a picture element portion, the exposure head being arranged so that a column direction of the picture element portion forms a predetermined set inclination angle θ with respect to a scanning direction of the exposure head Using the head
With respect to the exposure head, the usable pixel part designating means designates the pixel part to be used for N double exposure (where N is a natural number of 2 or more) among the usable graphic elements.
For the exposure head, the pixel part control means controls the pixel part so that only the pixel part specified by the used pixel part specifying means is involved in exposure,
An exposure step of performing exposure by moving the exposure head relative to the photosensitive layer in the scanning direction; and
And a development step of developing the photosensitive layer exposed in the exposure step. In the method for producing an in-cell structure described in <1>, the exposure head is subjected to N multiple exposures (where N is 2 or more) among the usable pixel parts by the used pixel part specifying means. The pixel part to be used for the natural number is specified, and the pixel part is controlled by the pixel part control unit so that only the pixel part specified by the used pixel part specifying unit is involved in the exposure. Is done. By performing exposure by moving the exposure head relative to the photosensitive layer in the scanning direction, the exposure head is formed on the exposed surface of the photosensitive layer due to a shift in the mounting position or mounting angle of the exposure head. Variations in the resolution of the pattern and unevenness in density are leveled. As a result, the photosensitive layer is exposed with high definition, and then the photosensitive layer is developed to produce a high-definition cell structure in which occurrence of failures such as chipping and dropping is suppressed. . Further, by making the maskless, the cost for the mask can be saved and the cost can be reduced, and the development period and other costs that have been lost due to the mask delivery date can be saved. Further, it is possible to prevent the yield from being reduced due to the contamination of the mask.
<2> The exposure is performed by a plurality of exposure heads, and the drawing element specifying means is related to the exposure of the head-to-head connection region, which is an overlapping exposure region on the exposed surface formed by the plurality of exposure heads. The method for manufacturing an in-cell structure according to <1>, wherein, among the element parts, the image element part used for realizing N double exposure in the inter-head connection region is designated. In the method for manufacturing an in-cell structure according to <2>, the exposure is performed by a plurality of exposure heads, and the used pixel portion designation unit performs overlapping exposure on the exposed surface formed by the plurality of exposure heads. Mounting of the exposure head by designating the pixel part used to realize N double exposure in the inter-head connection area among the image element parts involved in the exposure of the inter-head connection area, which is an area. Variations in the resolution and density unevenness of the pattern formed in the head-to-head connection region on the exposed surface of the photosensitive layer due to a shift in position and mounting angle are leveled. As a result, the photosensitive layer is exposed with high definition, and then the photosensitive layer is developed to produce a high-definition cell structure in which occurrence of failures such as chipping and dropping is suppressed. .
<3> The exposure is performed by a plurality of exposure heads, and the used picture element specifying means is involved in exposure other than the inter-head connection region that is an overlapping exposure region on the exposed surface formed by the plurality of exposure heads. The method for manufacturing an in-cell structure according to <2>, wherein the pixel portion used for realizing N double exposure in a region other than the head-to-head connection region among the pixel portions is designated. In the method for manufacturing an in-cell structure according to <3>, the exposure is performed by a plurality of exposure heads, and the used pixel portion designating unit performs overlapping exposure on the exposed surface formed by the plurality of exposure heads. The exposure head is designated by designating the pixel part used for realizing N-fold exposure in areas other than the head-to-head connection area among the picture-element parts involved in exposure other than the head-to-head connection area. Variations in the resolution and density unevenness of the pattern formed in areas other than the joint area between the heads on the exposed surface of the photosensitive layer due to deviations in the mounting position and mounting angle are uniformed. As a result, the photosensitive layer is exposed with high definition, and then the photosensitive layer is developed to produce a high-definition cell structure in which occurrence of failures such as chipping and dropping is suppressed. .
<4> When the set inclination angle θ is N, the number of N exposures, the number s of pixel parts in the column direction, the interval p of the pixel parts in the column direction, and the exposure head tilted. the relative row direction pitch δ of pixel parts in the direction perpendicular to the scanning direction, the following equation with respect to theta _ideal satisfying spsinθ _ideal ≧ Nδ, which is set so as to satisfy the relation of θ ≧ θ _ideal < It is a manufacturing method of the structure in a cell given in either of <1> to <3>.
<5> The method for producing an in-cell structure according to any one of <1> to <4>, wherein N in N-fold exposure is a natural number of 3 or more. In the method for manufacturing an in-cell structure described in <5>, multiple drawing is performed when N in N-fold exposure is a natural number of 3 or more. As a result, due to the effect of filling, variations in resolution and density unevenness of the pattern formed on the exposed surface of the photosensitive layer due to deviations in the mounting position and mounting angle of the exposure head are more precisely leveled.

<6> Use pixel part designation means
A light spot position detecting means for detecting a light spot position as a pixel unit that is generated by the picture element unit and constitutes an exposure area on the exposed surface;
<1> to <5>, further comprising: a pixel part selection unit that selects a pixel part to be used for realizing N double exposure based on a detection result by the light spot position detection unit. It is a manufacturing method of the structure in a cell.
<7> The in-cell structure according to any one of <1> to <6>, wherein the used pixel part specifying unit specifies a used pixel part to be used for realizing the N double exposure in a row unit. It is a manufacturing method.

<8> Based on at least two light spot positions detected by the light spot position detection means, the column direction of the light spots on the surface to be exposed and the scanning direction of the exposure head when the exposure head is tilted <6> to <7>, wherein the inclination angle θ ′ is specified, and the drawing element selection means selects the drawing element part so as to absorb the error between the actual inclination angle θ ′ and the set inclination angle θ. It is a manufacturing method of the structure in a cell in any one.
<9> The average inclination angle θ ′ is an average value, a median value, and a plurality of actual inclination angles formed by the row direction of the light spots on the surface to be exposed and the scanning direction of the exposure head when the exposure head is inclined. The method for producing an in-cell structure according to <8>, which is either a maximum value or a minimum value.
<10> The pixel part selection means derives a natural number T close to t that satisfies the relationship of ttan θ ′ = N (where N represents N of N double exposure numbers) based on the actual inclination angle θ ′, and m <8> to <9> for selecting the pixel part from the first line to the T-th line in a line element (where m represents a natural number of 2 or more) arranged as a used pixel part A method for producing an in-cell structure according to any one of the above.
<11> The pixel part selection means derives a natural number T close to t satisfying a relationship of ttan θ ′ = N (where N represents N of N double exposure numbers) based on the actual inclination angle θ ′, and m In the picture element part arranged in a row (where m represents a natural number of 2 or more), the picture element part in the (T + 1) -th line to the m-th line is specified as an unused picture element part, and the unused picture element part is specified. The method for producing an in-cell structure according to any one of <8> to <9>, wherein the picture element part excluding the element part is selected as a use picture element part.

<12> In a region including at least an overlapped exposure region on an exposed surface formed by a plurality of pixel part columns,
(1) Means for selecting a used pixel portion so that a total area of an overexposed region and an underexposed region is minimized with respect to an ideal N-fold exposure;
(2) Means for selecting a pixel part to be used so that the number of pixel units in an overexposed area and the number of pixel units in an underexposed area are equal to each other with respect to an ideal N double exposure;
(3) Means for selecting a pixel part to be used so that an area of an overexposed area is minimized and an underexposed area does not occur with respect to an ideal N double exposure, and (4) an ideal From <6>, which is one of means for selecting a used pixel portion so that an area of an underexposed region is minimized and an overexposed region is not generated with respect to a typical N double exposure. <11> is a method for producing an in-cell structure.
<13> In the connecting region between the heads, which is an overlapping exposure region on the exposed surface formed by the plurality of exposure heads,
(1) With respect to the ideal N-multiple exposure, from the pixel part involved in the exposure of the inter-head connection region, the total area of the overexposed region and the underexposed region is minimized. Means for identifying a used pixel part and selecting the pixel part excluding the unused pixel part as a used pixel part;
(2) Involvement in the exposure of the head-to-head connecting region so that the number of pixel units in the overexposed region and the number of pixel units in the underexposed region are equal to the ideal N-double exposure. Means for identifying an unused pixel part from the pixel part to be selected, and selecting the pixel part excluding the unused pixel part as a used pixel part;
(3) For the ideal N-multiple exposure, from the pixel part involved in the exposure of the inter-head connecting region, the area of the overexposed region is minimized and the underexposed region is not generated. A means for identifying an unused pixel part and selecting the pixel part excluding the unused pixel part as a used pixel part; and
(4) For the ideal N-multiple exposure, from the pixel part involved in the exposure of the inter-head connecting region, the area of the underexposed region is minimized and the region that is overexposed is not generated. , Means for identifying an unused pixel part and selecting the pixel part excluding the unused pixel part as a used pixel part;
<6> to <12> according to any one of <6> to <12>.
<14> The method for manufacturing an in-cell structure according to <13>, wherein the unused pixel parts are specified in units of rows.

<15> In order to specify the used pixel part in the used pixel part specifying means, among the usable pixel elements, N (n−1) pixel element columns for N multiple exposures The method for producing an in-cell structure according to any one of <5> to <14>, wherein the reference exposure is performed using only the pixel part constituting the structure. In the method for manufacturing an in-cell structure according to <15>, in order to specify a used pixel part in a used pixel part specifying unit, among the usable pixel elements, N of N double exposures , (N-1) Reference exposure is performed using only the pixel part constituting the pixel part column for each column, and a simple pattern of substantially single drawing is obtained. As a result, the picture element portion in the head-to-head connection region is easily specified.
<16> In order to specify the used pixel part in the used pixel part specifying means, among the usable pixel parts, a pixel part row is formed every 1 / N lines for N of N double exposures. The method for producing an in-cell structure according to any one of <5> to <14>, wherein the reference exposure is performed using only the pixel part. In the method for manufacturing an in-cell structure according to <16>, in order to specify a used pixel part in the used pixel part specifying unit, N of N multiple exposures among the usable pixel parts. , The reference exposure is performed using only the pixel part constituting the pixel part column for each 1 / N row, and a simple pattern of substantially single drawing is obtained. As a result, the picture element portion in the head-to-head connection region is easily specified.

<17> The <1> to <16>, wherein the used pixel part designating unit includes an arithmetic unit connected to the light detector as a pixel part selection unit and a slit and a photodetector as a light spot position detection unit. A method for producing an in-cell structure according to any one of the above.
<18> The method for producing an in-cell structure according to any one of <1> to <17>, wherein N in N-exposure exposure is a natural number of 3 or more and 7 or less.

<19> The light modulation means further includes pattern signal generation means for generating a control signal based on the pattern information to be formed, and the control signal generated by the pattern signal generation means is emitted from the light irradiation means. The method for manufacturing an in-cell structure according to any one of <1> to <18>, wherein the modulation is performed according to.
<20> From the above <1>, having a conversion means for converting the pattern information so that the dimension of the predetermined part of the pixel pattern represented by the pattern information matches the dimension of the corresponding part that can be realized by the designated used pixel part <19> A method for producing an in-cell structure according to any one of the above.

<21> The method for manufacturing an in-cell structure according to any one of <1> to <20>, wherein the light modulation unit is a spatial light modulation element.
<22> The method for producing an in-cell structure according to <21>, wherein the spatial light modulation element is a digital micromirror device (DMD).
<23> The method for producing an in-cell structure according to any one of <21> to <22>, wherein the pixel part is a micromirror.

<24> The method for producing an in-cell structure according to any one of <1> to <23>, wherein the light irradiation unit can synthesize and irradiate two or more lights. In the method for producing an in-cell structure described in <24>, the light irradiation unit can synthesize and irradiate two or more lights, so that exposure is performed with exposure light having a deep focal depth. As a result, the exposure of the photosensitive layer is performed with extremely high definition. For example, after that, the photosensitive layer is developed to form an extremely fine pattern.
<25> The light irradiation means includes a plurality of lasers, a multimode optical fiber, and a collective optical system that collects the laser beams emitted from the plurality of lasers and converges them on the incident end face of the multimode optical fiber, The method for producing an in-cell structure according to any one of <1> to <24>. In the method for manufacturing an internal structure of a cell according to <25>, the light irradiation unit condenses laser beams irradiated from the plurality of lasers by the collective optical system, and enters the multimode optical fiber. By converging on the end face, exposure is performed with exposure light having a deep focal depth. As a result, the exposure of the photosensitive layer is performed with extremely high definition. For example, after that, the photosensitive layer is developed to form an extremely fine pattern.

<26> The method for producing an in-cell structure according to any one of <1> to <25>, wherein the photosensitive layer is any one of a positive photosensitive layer and a negative photosensitive layer.
<27> The method for producing an in-cell structure according to <26>, wherein the positive photosensitive layer contains at least two selected from a phenol resin and a naphthoquinone diazide derivative.

<28> An in-cell structure manufactured by the method for manufacturing an in-cell structure according to any one of <1> to <27>.
<29> The intra-cell structure according to <28>, wherein the structure is at least one of a pillar, a liquid crystal alignment control protrusion, a stacked pillar, and an insulating film.
<30> A display device using the in-cell structure according to any one of <28> to <29>.

  According to the present invention, conventional problems can be solved, and cell structures such as columns (spacers), liquid crystal alignment control protrusions, overlapping columns, and insulating films can be formed with high definition without using a photomask. It is possible to provide a high-definition cell structure manufactured by a possible manufacturing method, a method for manufacturing the cell internal structure, and a display device using the cell internal structure.

(Manufacturing method of cell internal structure)
The method for producing an in-cell structure of the present invention includes at least an exposure step and a development step, and further includes other steps appropriately selected as necessary.
The in-cell structure of the present invention is manufactured by the method for manufacturing the in-cell structure of the present invention.
The display device of the present invention uses the in-cell structure of the present invention, and further includes other means as necessary.
Hereinafter, details of the in-cell structure and the display device of the present invention will be clarified through the description of the manufacturing method of the in-cell structure of the present invention.

  The photosensitive layer is composed of a photosensitive composition containing at least a binder and is not particularly limited as long as it is located on the surface of the substrate, and can be appropriately selected according to the purpose. For example, the photosensitive composition containing at least a binder Is formed on the surface of the substrate. Further, other layers appropriately selected as necessary are formed.

  The method for forming the photosensitive layer is not particularly limited and may be appropriately selected depending on the intended purpose. For example, a method for forming by coating or laminating a sheet-like photosensitive layer by at least one of pressing and heating. The method of forming by doing this, those combined use, etc. are mentioned, The photosensitive layer forming method of the 1st aspect shown below and the photosensitive layer forming method of a 2nd aspect are mentioned suitably.

  As the photosensitive layer forming method of the first aspect, at least a photosensitive layer is formed on the surface of the base material by applying the photosensitive composition to the surface of the base material and drying, and further appropriately selected. The method of forming the other layer is mentioned.

  As a method for forming a photosensitive layer of the second aspect, at least a photosensitive film (hereinafter sometimes referred to as “photosensitive transfer material”) obtained by forming the photosensitive composition into a film is heated on the surface of a substrate. A method of forming at least a photosensitive layer on the surface of the substrate by laminating under at least one of pressurization and further forming other layers appropriately selected can be mentioned.

  In the photosensitive layer forming method of the first aspect, the coating and drying method is not particularly limited and may be appropriately selected depending on the intended purpose. For example, the photosensitive composition is formed on the surface of the substrate. Can be dissolved, emulsified or dispersed in water or a solvent to prepare a photosensitive composition solution, and the solution can be directly applied and dried for lamination.

  There is no restriction | limiting in particular as a solvent of the said photosensitive composition solution, According to the objective, it can select suitably, For example, methanol, ethanol, n-propanol, isopropanol, n-butanol, sec-butanol, n Alcohols such as hexanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone; ethyl acetate, butyl acetate, acetic acid-n-amyl, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate And esters such as methoxypropyl acetate; aromatic hydrocarbons such as toluene, xylene, benzene, ethylbenzene; carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, methylene chloride, monochlorobe Halogenated hydrocarbons such as zen; ethers such as tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1-methoxy-2-propanol; dimethylformamide, dimethylacetamide, dimethylsulfoxide, sulfolane, etc. Can be mentioned. These may be used alone or in combination of two or more.

The application method is not particularly limited and may be appropriately selected depending on the intended purpose. For example, the above-described group may be formed using a spin coater, a slit spin coater, a slit coater, a roll coater, a die coater, a curtain coater, or the like. The method of apply | coating directly to a material is mentioned.
The drying conditions vary depending on each component, the type of solvent, the use ratio, and the like, but are usually about 60 to 110 ° C. for about 30 seconds to 15 minutes.

  There is no restriction | limiting in particular as thickness of the said photosensitive layer, According to the objective, it can select suitably, 0.5-10 micrometers is preferable, 0.75-6 micrometers is more preferable, 1-5 micrometers is especially preferable.

Other layers formed in the photosensitive layer forming method of the first aspect are not particularly limited and may be appropriately selected depending on the purpose. For example, an oxygen blocking layer, a release layer, an adhesive layer, a light absorbing layer And a surface protective layer.
There is no restriction | limiting in particular as a formation method of the said other layer, According to the objective, it can select suitably, For example, the method of apply | coating on the said photosensitive layer, The method of laminating | stacking the other layer formed in the sheet form Etc.

In the method for forming a photosensitive layer according to the second aspect, examples of a method for forming a photosensitive layer on the surface of the substrate and other layers appropriately selected as necessary include a support on the surface of the substrate. At least one of heating and pressurizing a photosensitive film (photosensitive transfer material) having a photosensitive layer in which a photosensitive composition is laminated on the support and other layers appropriately selected as necessary. And a method of laminating while carrying out, laminating a photosensitive film in which the photosensitive composition is laminated on the support so that the photosensitive composition is on the surface side of the substrate, The method of peeling a support body from the photosensitive composition is mentioned suitably.
By peeling the support, it is possible to prevent a blurred image from being formed on the image formed on the photosensitive composition layer due to light scattering, refraction, and the like by the support. can get.
In addition, when the said photosensitive film has a protective film mentioned later, it is preferable to peel this protective film and to laminate | stack so that the said photosensitive layer may overlap with the said base material.

There is no restriction | limiting in particular as said heating temperature, Although it can select suitably according to the objective, For example, 70-130 degreeC is preferable and 80-110 degreeC is more preferable.
There is no restriction | limiting in particular as a pressure of the said pressurization, Although it can select suitably according to the objective, For example, 0.01-1.0 MPa is preferable and 0.05-1.0 MPa is more preferable.

  There is no restriction | limiting in particular as an apparatus which performs at least any one of the said heating and pressurization, According to the objective, it can select suitably, For example, a heat press, a heat roll laminator (for example, Hitachi Industries Ltd. make) , Lamic II type), vacuum laminator (for example, MVLP500 manufactured by Meiki Seisakusho) and the like are preferable.

  The support is not particularly limited and may be appropriately selected depending on the intended purpose. However, it is preferable that the photosensitive layer can be peeled off and that light transmittance is good, and that the surface is smooth. Is more preferable.

  There is no restriction | limiting in particular as thickness of the said support body, According to the objective, it can select suitably, For example, 4-300 micrometers is preferable, 5-175 micrometers is more preferable, and 10-100 micrometers is especially preferable.

  There is no restriction | limiting in particular as a shape of the said support body, Although it can select suitably according to the objective, A long shape is preferable. There is no restriction | limiting in particular as the length of the said elongate support body, For example, the thing of length 10m-20000m is mentioned.

The support is preferably made of a synthetic resin and transparent, for example, cellulose film such as cellulose triacetate and cellulose diacetate; polyethylene terephthalate, polyethylene naphthalate, polypropylene, polyethylene, poly (meth) acrylic Acid alkyl ester, poly (meth) acrylic acid ester copolymer, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinylidene chloride copolymer, polyamide, polyimide, vinyl chloride / vinyl acetate copolymer, polytetra Various plastic films such as fluoroethylene, polytrifluoroethylene, and nylon can be used, and among these, polyethylene terephthalate is particularly preferable. These may be used alone or in combination of two or more.
As the support, for example, the support described in JP-A-4-208940, JP-A-5-80503, JP-A-5-173320, JP-A-5-72724, or the like is used. You can also.

  Formation of the photosensitive layer in the photosensitive film can be performed by a method similar to the application and drying of the photosensitive composition solution to the substrate (the photosensitive layer forming method of the first aspect), for example, Examples of the method include applying the photosensitive composition solution using a spin coater, a slit spin coater, a roll coater, a die coater, a curtain coater, or the like.

The protective film is a film having a function of preventing and protecting the photosensitive layer from being stained and damaged.
There is no restriction | limiting in particular as thickness of the said protective film, According to the objective, it can select suitably, For example, 5-100 micrometers is preferable, 8-50 micrometers is more preferable, 10-40 micrometers is especially preferable.

  There is no restriction | limiting in particular as a location provided in the said photosensitive film of the said protective film, Although it can select suitably according to the objective, Usually, it provides on the said photosensitive layer.

  When the protective film is used, the relationship between the adhesive force A of the photosensitive layer and the support and the adhesive force B of the photosensitive layer and the protective film is preferably adhesive force A> adhesive force B. .

The coefficient of static friction between the support and the protective film is preferably 0.3 to 1.4, and more preferably 0.5 to 1.2.
When the coefficient of static friction is less than 0.3, slipping is excessive, so that winding deviation may occur when the roll is formed. Sometimes.

The protective film is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include those used for the support, silicone paper, polyethylene, polypropylene laminated paper, polyolefin or polytetrafluoro. An ethylene sheet etc. are mentioned, Among these, a polyethylene film, a polypropylene film, etc. are mentioned as a particularly preferable thing.
Examples of the combination of the support and the protective film (support / protective film) include polyethylene terephthalate / polypropylene, polyethylene terephthalate / polyethylene, polyvinyl chloride / cellophane, polyimide / polypropylene, polyethylene terephthalate / polyethylene terephthalate, and the like. .

  The protective film is preferably surface-treated in order to adjust the adhesion between the protective film and the photosensitive layer in order to satisfy the above-described adhesive force relationship. Reference can be made to the description in paragraph No. 0151 of Japanese Utility Model Publication No. 2005-70767.

  There is no restriction | limiting in particular as said other layer, According to the objective, it can select suitably, For example, a thermoplastic resin layer, an intermediate | middle layer, etc. are mentioned.

-Thermoplastic resin layer-
The thermoplastic resin layer (hereinafter sometimes referred to as a “cushion layer”) enables alkali development, and prevents the transfer target from being contaminated by the thermoplastic resin layer protruding during transfer. In view of the above, it is preferably alkali-soluble, and when transferring the photosensitive transfer material onto the transfer object, a cushion that effectively prevents transfer defects caused by unevenness present on the transfer object It preferably has a function as a material, and is more deformable according to the unevenness present on the transferred body when the photosensitive transfer material is heated and adhered onto the transferred body. preferable.

As the material used for the thermoplastic resin layer, for example, organic polymer substances described in JP-A-5-72724 are preferable, and the Viker Vicat method (specifically, American Material Testing Method ASTM D1235). It is particularly preferred that the softening point by the polymer softening point measurement method according to (1) is selected from organic polymer substances having a temperature of about 80 ° C. or lower. Specifically, polyolefins such as polyethylene and polypropylene, ethylene copolymers such as ethylene and vinyl acetate or saponified products thereof, ethylene and acrylic acid esters or saponified products thereof, polyvinyl chloride, vinyl chloride and vinyl acetate or saponified products thereof. Vinyl chloride copolymer such as fluoride, polyvinylidene chloride, vinylidene chloride copolymer, polystyrene, styrene copolymer such as styrene and (meth) acrylic acid ester or saponified product thereof, polyvinyl toluene, vinyl toluene and (meta ) Vinyl toluene copolymer such as acrylic ester or saponified product thereof, poly (meth) acrylic ester, (meth) acrylic ester copolymer such as butyl (meth) acrylate and vinyl acetate, vinyl acetate copolymer Combined nylon, copolymer nylon, N-alkoxymethylated sodium Ron, and organic polymers of the polyamide resins, such as N- dimethylamino nylon and the like.
The dry thickness of the thermoplastic resin layer is preferably 2 to 30 μm, more preferably 5 to 20 μm, and particularly preferably 7 to 16 μm.

-Intermediate layer-
The intermediate layer is provided on the photosensitive layer, and is provided between the photosensitive layer and the thermoplastic resin layer when the photosensitive transfer material has the thermoplastic resin layer. In forming the photosensitive layer and the thermoplastic resin layer, an organic solvent is used. Therefore, when the intermediate layer is located between them, the layers can be prevented from being mixed with each other.

The intermediate layer is preferably dispersed or dissolved in water or an aqueous alkali solution.
As the material for the intermediate layer, known materials can be used. For example, polyvinyl ether / maleic anhydride polymer, carboxyalkyl described in JP-A No. 46-2121 and JP-B No. 56-40824 Water-soluble salt of cellulose, water-soluble cellulose ether, water-soluble salt of carboxyalkyl starch, polyvinyl alcohol, polyvinyl pyrrolidone, polyacrylamide, water-soluble polyamide, water-soluble salt of polyacrylic acid, gelatin, ethylene oxide polymer, various Water soluble salts of the group consisting of starch and the like, styrene / maleic acid copolymers, maleate resins, and the like.
These may be used alone or in combination of two or more. Among these, it is preferable to use a hydrophilic polymer, and among these hydrophilic polymers, it is preferable to use at least polyvinyl alcohol, and a combination of polyvinyl alcohol and polyvinyl pyrrolidone is particularly preferable.

There is no restriction | limiting in particular as said polyvinyl alcohol, Although it can select suitably according to the objective, The saponification rate has preferable 80% or more.
When using the said polyvinyl pyrrolidone, as content, 1-75 volume% is preferable with respect to solid content of this intermediate | middle layer, 1-60 volume% is more preferable, 10-50 volume% is especially preferable.
When the content is less than 1% by volume, sufficient adhesion to the photosensitive layer may not be obtained.

  The intermediate layer preferably has a low oxygen permeability. When the oxygen permeability of the intermediate layer is large and the oxygen blocking ability is low, it may be necessary to increase the amount of light at the time of exposure to the photosensitive layer, or it may be necessary to lengthen the exposure time, and the resolution also decreases. May end up.

There is no restriction | limiting in particular as thickness of the said intermediate | middle layer, According to the objective, it can select suitably, 0.1-5 micrometers is preferable and 0.5-2 micrometers is more preferable.
If the thickness is less than 0.1 μm, oxygen permeability may be too high, and if it exceeds 5 μm, it takes a long time for development or removal of the intermediate layer, which is not preferable.

  The structure of the photosensitive film is not particularly limited and may be appropriately selected depending on the intended purpose. For example, a thermoplastic resin layer, an intermediate layer, and a photosensitive layer on the support, the temporary support, and the like. The form which has a layer in this order is mentioned. The photosensitive layer may be a single layer or a plurality of layers.

  The photosensitive film is preferably stored, for example, wound around a cylindrical core, wound in a long roll shape. There is no restriction | limiting in particular as the length of the said elongate photosensitive film, For example, it can select suitably from the range of 10m-20,000m. Further, slitting may be performed so that the user can easily use, and a long body in the range of 100 m to 1,000 m may be formed into a roll. In this case, it is preferable that the support is wound up so as to be the outermost side. Moreover, you may slit the said roll-shaped photosensitive film in a sheet form. When storing, from the viewpoint of protecting the end face and preventing edge fusion, it is preferable to install a separator (particularly moisture-proof and containing a desiccant) on the end face, and use a low moisture-permeable material for packaging. Is preferred.

The said photosensitive film can be used suitably for the manufacturing method of the structure in a cell of this invention demonstrated in detail below.
In addition, there is no restriction | limiting in particular as an exposure method to the laminated body which has the photosensitive layer formed by the photosensitive layer forming method of the said 2nd aspect, According to the objective, it can select suitably, For example, on a support body In the case of a film comprising a photosensitive layer existing through a cushion layer, it is preferable that the photosensitive layer is exposed through the oxygen blocking layer after the support, and in some cases, the cushion layer is also peeled off.

As the photosensitive layer, either a positive type photosensitive layer or a negative type photosensitive layer can be suitably used. For the purpose of forming a liquid crystal alignment control protrusion, the liquid crystal alignment control protrusion has a bowl-shaped cross-sectional shape. Therefore, a positive photosensitive layer is preferable. When a positive photosensitive layer is used, a liquid crystal alignment control projection image formed by development tends to melt and flow due to heating in the curing process after the development process, and is likely to have an appropriate wrinkle shape.
Further, when an insulating film having a contact hole used for a high aperture structure LCD or the like is formed, a positive photosensitive layer that melts and flows is preferable because the shape of the contact hole is a mortar type.

On the other hand, a negative photosensitive layer is preferred for the purpose of forming columns. This is because the pillar preferably has a trapezoidal cross-sectional shape from the function of supporting the load by contacting the counter substrate, and the negative photosensitive layer is polymerized at the time of exposure, and the shape change in the subsequent process is small. This is because a trapezoidal cross-sectional shape is easily obtained.
When the liquid crystal alignment control protrusion and the overlapping pillar are formed at the same time, a positive photosensitive layer is used for the liquid crystal alignment control protrusion, and a positive photosensitive layer is used on the top of the pillar to form a pillar structure. Form. In this case, since the cross-sectional shape is likely to be rounded by the melt, it is preferable to devise such as increasing the size of the entire column so that this influence is reduced.

<Positive photosensitive layer>
The positive photosensitive layer contains at least two selected from a phenol resin and a naphthoquinonediazide derivative. Examples of the phenol resin include a phenol novolak resin and a cresol novolak resin. Among them, it is particularly preferable to contain two kinds of a cresol novolak resin and a naphthoquinone diazide derivative from the viewpoint of wide development latitude.

-Phenol novolac resin-
The phenol novolac resin preferably has a molar ratio of formaldehyde to phenol of about 0.5 to 1.0, more preferably 0.8 to 1.0 from the viewpoint of developability and image sticking. Moreover, as a weight average molecular weight of the said phenol novolak resin, 300-4000 are preferable and 400-800 are especially preferable.
The phenol novolac resin may be a derivative thereof.
The phenol novolac resin may be used alone or in combination of two or more different molecular weights, with other resins such as a cresol novolac resin within a range not impairing the object of the present invention. You may mix and use.
As content of the said phenol novolak resin, 40-90 mass% is preferable with respect to the total solid content in a positive photosensitive layer, and 60-80 mass% is more preferable.

-Cresol novolac resin-
The cresol novolac resin preferably has a molar ratio of formaldehyde to cresol of about 0.7 to 1.0, and more preferably 0.8 to 1.0. Moreover, as a weight average molecular weight of the said cresol novolak resin, 800-8,000 are preferable and 1000-6000 are more preferable.
The isomer ratio (molar ratio of o-isomer / m-isomer / p-isomer) of the cresol novolak resin is not particularly limited and can be appropriately selected according to the purpose. From the viewpoint of improving developability, all isomers It is preferable that the ratio of the p-form with respect to is 10 mol% or more, and more preferably 20 mol% or more. Further, from the viewpoint of improving the liquid crystal panel performance (anti-baking ability), the m-isomer ratio is preferably 5 mol% or more, and more preferably 20 mol% or more.

The said cresol novolak resin may be used individually by 1 type, and can be used as a 2 or more types of mixture. In this case, it may be used by mixing with other resins such as phenol novolac.
In the present invention, as the cresol novolak resin, a derivative of a cresol novolak resin such as a reaction product with naphthoquinone diazide sulfonate may be used.
As the usage-amount of the said cresol novolak resin, 0.1-10 g / m < ² > is preferable and 0.5-5 g / m < ² > is more preferable.

-Naphthoquinonediazide derivatives-
The naphthoquinonediazide derivative is not particularly limited and may be appropriately selected depending on the intended purpose, but it is particularly preferable to use in combination with a cresol novolac resin. The naphthoquinonediazide derivative may be a monofunctional compound, a bifunctional or higher compound, or a mixture thereof.
Examples of the monofunctional naphthoquinonediazide derivative include naphthoquinone-4-sulfonic acid chloride or an ester compound obtained by reacting naphthoquinone-5-sulfonic acid chloride with a substituted phenol.

As the bifunctional or higher naphthoquinonediazide derivative, for example, an ester compound obtained by reacting naphthoquinone-4-sulfonic acid chloride or naphthoquinone-5-sulfonic acid chloride with a compound having a plurality of phenolic hydroxyl groups is preferable. Examples of the compound having a plurality of phenolic hydroxyl groups include polyphenols such as bisphenols, trisphenols and tetraquinosphenols; polyfunctional phenols such as dihydroxybenzene and trihydroxybenzene; bis-type or tris-type dihydroxybenzene or Examples thereof include trihydroxybenzene, asymmetric polynuclear phenol, and a mixture thereof.
Examples of the compound having a plurality of phenolic hydroxyl groups include 4-t-butylphenol, 4-isoamylphenol, 4-t-octylphenol, 2-isopropyl-5-methylphenol, 2-acetylphenol, 4-hydroxybenzophenone, 3 -Chlorophenol, 4-benzyloxycarbonylphenol, 4-dodecylphenol, resorcinol, 4- (1-methyl-1-phenylethyl) -1,3-benzenediol, phloroglucinol, 4,4'-dihydroxybenzophenone, Bis (4-hydroxyphenyl) methane, 1,1-bis (4-hydroxyphenyl) cyclohexane, 2,2-bis (3-methyl-4-hydroxyphenyl) methane, 2,3,4,4′-tetrahydroxy Benzophenone, 4,4 '-[( 4-hydroxyphenyl) methylene] bis [2-cyclohexyl-5-methylphenol] and the like.

  Examples of the naphthoquinonediazide derivative include 4′-t-octylphenylnaphthoquinonediazide-4-sulfonate, 4′-t-octylphenylnaphthoquinonediazide-5-sulfonate, 4′-benzoylphenylnaphthoquinonediazide-5-sulfonate, , 3,4,4′-tetrahydroxybenzophenone and a reaction product of 1,2-naphthoquinonediazide-5-sulfonic acid chloride. These may be used individually by 1 type and may use 2 or more types together.

  The amount of the naphthoquinone diazide derivative added in the photosensitive layer is preferably 1 to 200 parts by mass, more preferably 5 to 50 parts by mass with respect to 100 parts by mass of the cresol novolac resin.

-Other additives-
In order to promote the developability of the positive photosensitive layer, the positive photosensitive layer may contain a divalent or higher valent aliphatic carboxylic acid and a 2-6 valent phenol compound.
Examples of the divalent or higher carboxylic acid include malonic acid, succinic acid, fumaric acid, maleic acid, hydroxysuccinic acid, glutaric acid, and adipic acid. Among these, malonic acid and succinic acid are preferable.
The content of the divalent or higher carboxylic acid is preferably 0.5 to 20% by mass with respect to the total solid content in the photosensitive layer.

Examples of the divalent to hexavalent phenol compound include resorcinol, 4- (1-methyl-1-phenylethyl) -1,3-benzenediol, phloroglucinol, 4,4′-dihydroxybenzophenone, bis (4 -Hydroxyphenyl) methane, 1,1-bis (4-hydroxyphenyl) cyclohexane, 2,2-bis (3-methyl-4-hydroxyphenyl) methane, 2,3,4,4'-tetrahydroxybenzophenone, 4 , 4 ′-[(4-hydroxyphenyl) methylene] bis [2-cyclohexyl-5-methylphenol] and the like, among these, resorcinol and 1,1-bis (4-hydroxyphenyl) cyclohexane are particularly preferable. .
The content of the bivalent to hexavalent phenol compound is preferably 0.5 to 20% by mass and more preferably 5 to 15% by mass with respect to the total solid content in the photosensitive layer.

  Further, a decolorizable dye can be added to the positive photosensitive layer from the viewpoint of making it possible to recognize failures such as transfer failure and accuracy failure during the formation of the in-cell structure, and improving manufacturing suitability. The decolorizable dye generally means a dye that can be decolored by heating at 200 ° C. for 1 hour, and is a colored dye that can be decolored during baking. As the decolorizable dye, a dye that can be decolored by heating at 180 ° C. for 1 hour is preferable. Such dyes usually undergo structural changes due to thermal decomposition or oxidation, or are evaporated or sublimated by heat. In addition, when an in-cell structure is prepared using a decolorizable dye, the in-cell structure preferably has a light transmittance of 90% or more with respect to parallel rays of 400 to 800 nm after decoloring.

  Examples of the decolorizable dye include dyes that decompose by heat, for example, dialkylamino such as Victoria Pure Blue BOH, Victoria Pure Blue BOH-M, Malachite Green, Eisen Malachite Green, Malachite Green Hydrochloride, Eisen Diamond Green, etc. And triphenylmethane dyes. Examples of the dye that evaporates or sublimates by heat include Orient Oil Brown, Methyl Yellow, Sumicaron Brilliant Blue B, 1,3,5-triphenyltetrazolium formazan, and the like.

  As the decolorizable dye, in addition to the above, the stain resistance evaluation of the sublimation fastness test (180 ° C., 180 ° C., described in Dye Handbook, edited by Organic Synthetic Chemical Society, Maruzen, issued on July 20, 1972) Those having a condition of 1 to 3 hours) can also be used. Specifically, C.I. I. Disperse Yellow 8, 31, 72, C.I. I. Disperse Orange 1, 3, 20, 21, C.I. I. Disperse Red 15, 55, 60, 65, C.I. I. Disperse Violet 8, 23, 26, 37, C.I. I. Disperse Blue 20, 26, 55, 56, 72, 90, 91, 92, 106, C.I. I. Disperse Black 29, Dialysis Direction Black B M / D (manufactured by Mitsubishi Kasei Co., Ltd.), Sumikaron Violet RS (manufactured by Sumitomo Chemical Co., Ltd.), Dianix Fast Sky Blue B M / D (manufactured by Mitsubishi Kasei M Co., Ltd.) Examples include Polyester Blue BCL, GRN (made by Mitsui Petrochemical Co., Ltd.), Kayalon Polyester Navy Blue GF (made by Nippon Kayaku Co., Ltd.), and the like. Among these, considering the suitability of the heating device and environmental pollution, the decolorizable dye is preferably a thermally decomposable dye.

  The addition amount of the decolorizable dye is preferably 0.1 to 10% by mass with respect to the total solid content of the positive photosensitive layer.

Moreover, a thermoplastic binder can be used for the positive photosensitive layer. Examples of the thermoplastic binder include compounds having an ethylenically unsaturated bond.
The addition amount of the binder can be appropriately selected within a range not impairing the effects of the present invention.

An additive capable of plasticizing the resin can be added to the positive photosensitive layer. Examples of the additive capable of plasticizing the resin include glycerin, ethylene glycol, propylene glycol, polyethylene glycol, alkylphenol, tricresyl phosphate, and the like.
The amount of the additive capable of plasticizing the resin is preferably 0 to 10% by mass and more preferably 1 to 8% by mass with respect to the total amount of the resin.

  The positive photosensitive layer contains at least two selected from a phenol novolak resin, a cresol novolak resin, and a naphthoquinone diazide derivative, and when exposed in a desired pattern, the exposed portion is developed by an alkaline aqueous solution or the like. A positive photosensitive transfer material to be removed is preferable. That is, the naphthoquinone diazide derivative acts as a dissolution inhibitor for alkali-soluble phenol novolak resins and cresol novolak resins, but when it receives light, 3-indenecarboxylic acid is produced and the dissolution inhibition effect is lost. Therefore, the positive photosensitive layer containing cresol novolac resin and naphthoquinone diazide functions as a positive resist in which only the light irradiation part is dissolved by alkali development.

  The film thickness of the positive photosensitive layer is preferably 0.5 to 10 μm, and more preferably 1 to 6 μm. When the film thickness is in the range of 0.5 to 10 μm, pinholes are less likely to occur when the positive photosensitive layer coating solution is applied onto the support, and the exposed portion can be easily removed during development. be able to.

  The positive photosensitive layer coating solution is a positive photosensitive layer coating solution in which components contained in the positive photosensitive layer, such as the above-described phenol novolak resin, cresol novolac resin, and naphthoquinone diazide derivative, are dissolved in a solvent. In the case where a thermoplastic resin layer or an intermediate layer is provided between the support and the positive photosensitive layer, it can be formed on the layer by applying and drying using various coating means. .

  There is no restriction | limiting in particular as a solvent used for the said coating liquid for positive type photosensitive layers, According to the objective, it can select suitably, For example, methanol, ethanol, n-propanol, isopropanol, n-butanol, sec-butanol Alcohols such as n-hexanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone; ethyl acetate, butyl acetate, acetic acid-n-amyl, methyl sulfate, ethyl propionate, dimethyl phthalate, benzoate Esters such as ethyl acid and methoxypropyl acetate; aromatic hydrocarbons such as toluene, xylene, benzene, ethylbenzene; carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroethane, methylene chloride, monochloro Halogenated hydrocarbons such as lobenzene; ethers such as tetrahydrofuran, diethyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 1-methoxy-2-propanol; dimethylformamide, dimethylacetamide, dimethylsulfoxide, sulfolane, etc. Can be mentioned. These may be used alone or in combination of two or more. Among these, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexane, ethyl carbitol acetate, butyl Preferred examples include carbitol acetate and propylene glycol methyl ether acetate. These solvents can be used alone or in combination of two or more.

<Negative photosensitive layer>
The negative photosensitive layer contains at least a resin, and further contains a polymerizable monomer, a polymerization initiator, an extender pigment, and other components appropriately selected as necessary.

  As the resin, those that can be developed with an aqueous alkaline solution and those that can be developed with an organic solvent are known, and those that can be developed with an aqueous alkaline solution are preferred from the viewpoint of preventing pollution and ensuring occupational safety.

  Among these resins, the resin used for the binder of the photosensitive layer according to the present invention includes a copolymer of (meth) acrylic acid and (meth) acrylic ester, a copolymer of styrene / maleic anhydride, or styrene / anhydrous. Examples include a reaction product of a maleic acid copolymer and alcohols, and among these, a copolymer of (meth) acrylic acid and (meth) acrylic acid ester is preferable.

  The (meth) acrylic acid-containing polymer is generally a polymer having a carboxylic acid group in the side chain, such as JP-A-59-44615, JP-B-54-34327, and JP-B-58-12777. Methacrylic acid copolymer, acrylic acid copolymer, itaconic acid copolymer, croton described in JP-B-54-25957, JP-A-59-53836, and JP-A-59-71048. Examples include acid copolymers, maleic acid copolymers, and partially esterified maleic acid copolymers. Moreover, the cellulose derivative which has a carboxylic acid group in a side chain is also mentioned.

In addition to the above, those obtained by adding a cyclic acid anhydride to a polymer having a hydroxyl group are also preferred. In particular, a copolymer of benzyl (meth) acrylate and (meth) acrylic acid or a multi-component copolymer of benzyl (meth) acrylate, (meth) acrylic acid and other monomers described in US Pat. No. 4,139,391 Can be mentioned. Furthermore, alcohol-soluble nylon can also be mentioned.
A plurality of (meth) acrylic acid-containing polymers may be used in combination.

The (meth) acrylic acid-containing polymer is usually selected from those having an acid value in the range of 50 to 300 mgKOH / 1 g and a weight average molecular weight in the range of 1,000 to 300,000. .
When the acid value is less than 50 mgKOH / 1 g, the alkali developability may be greatly lowered, and when it exceeds 300 mgKOH / 1 g, the target structure may not be obtained.

As above-mentioned, as a weight average molecular weight of the said (meth) acrylic acid containing polymer, 1,000-300,000 are preferable and 10,000-250,000 are more preferable.
When the weight average molecular weight is less than 1,000, a target structure may not be obtained. On the other hand, when the weight average molecular weight exceeds 300,000, developability may be extremely lowered. In addition, a weight average molecular weight is a polystyrene conversion average molecular weight measured by GPC (gel permeation chromatography).

  As content of the said resin, 20-60 mass% of the total solid of a photosensitive layer is preferable, and 30-55 mass% is more preferable. When the content is less than 20% by mass, it may be difficult to form a film at the time of application. When the content exceeds 60% by mass, the addition amount of silica and the like is limited, and thus the object of the present invention is achieved. Is not preferable because it becomes difficult.

-Polymerizable monomer-
The polymerizable monomer is not particularly limited as long as it has at least one addition-polymerizable ethylenically unsaturated group, and can be appropriately selected according to the purpose. For example, an ester compound, an amide compound, other Compounds and the like. These may be used individually by 1 type and may use 2 or more types together.

  Examples of the ester compound include monofunctional (meth) acrylic acid ester, polyfunctional (meth) acrylic acid ester, itaconic acid ester, crotonic acid ester, isocrotonic acid ester, maleic acid ester, and other ester compounds. It is done. These may be used individually by 1 type, and may use 2 or more types together, Among these, monofunctional (meth) acrylic acid ester, polyfunctional (meth) acrylic acid ester, etc. are preferable.

  Examples of the monofunctional (meth) acrylic acid ester include polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, and phenoxyethyl mono (meth) acrylate.

Examples of the polyfunctional (meth) acrylic acid ester include polyethylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, and 1,3-butanediol di (meth). Acrylate, tetramethylene glycol di (meth) acrylate, hexanediol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol di (meth) acrylate, dipentaerythritol tri (meth) ) Acrylate, dipentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol poly (meth) acrylate, sorbitol Tri (meth) acrylate, sorbitol tetra (meth) acrylate, trimethylolethane tri (meth) acrylate, neopentyl glycol di (meth) acrylate, hexanediol di (meth) acrylate.
Among these, dipentaerythritol poly (meth) acrylate is particularly preferable.

  Other examples of the polyfunctional (meth) acrylic acid ester include those obtained by adding ethylene oxide or propylene oxide to a polyfunctional alcohol such as glycerin or trimethylolethane and then (meth) acrylate, Japanese Patent Publication No. 48-41708. Urethane acrylates described in Japanese Patent Publication No. 50-6034, Japanese Patent Publication No. 51-37193, Japanese Patent Publication No. 48-64183, Japanese Patent Publication No. 49-43191, and Japanese Patent Publication No. 52-30490. Polyester acrylates described in the publication, epoxy acrylates which are reaction products of epoxy resin and (meth) acrylic acid, (meth) acrylic acid esters and urethane (meth) acrylates described in JP-A-60-258539 And vinyl esters.

  Examples of the other ester compounds include trimethylolpropane tri (acryloyloxypropyl) ether, tri (acryloyloxyethyl) isocyanurate, Japan Adhesion Association Vol. 20, photo curable monomers and oligomers described in No. 7, pages 300 to 308, and the like.

  Examples of the amide compound include an amide (monomer) of an unsaturated carboxylic acid and an aliphatic polyvalent amine compound. Specifically, methylene bis- (meth) acrylamide, 1,6-hexamethylene bis- (Meth) acrylamide, diethylenetriamine tris (meth) acrylamide, xylylene bis (meth) acrylamide, and the like, and (meth) acrylic acid amide described in JP-A-60-258539 are exemplified.

  Examples of the other compounds include allyl compounds described in JP-A-60-258539.

  As content in the said photosensitive composition of the said polymerizable monomer, 10-60 mass% of total solid content is preferable, and 20-50 mass% is more preferable.

-Polymerization initiator-
The polymerization initiator preferably contains at least one component having a molecular extinction coefficient of about 50 or more in a wavelength region of about 300 to 500 nm. For example, JP-A-2-48664 and JP-A-1 -152449 and JP-A-2-153353, aromatic ketones, lophine dimers, benzoin, benzoin ethers, polyhalogens, halogenated hydrocarbon derivatives, ketone compounds, ketoxime compounds, organic peroxides. Examples thereof include oxides, thio compounds, hexaarylbiimidazoles, aromatic onium salts, and ketoxime ethers.

  These may be used individually by 1 type and may use 2 or more types together. Among these, a combination of 4,4′-bis (diethylamino) benzophenone and 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 4- [pN, N′-di (ethoxycarbonyl) Methyl) -2,6-di (trichloromethyl) -s-triazine], 2,4-bis- (trichloromethyl) -6- [4- (N, N′-diethoxycarbonylmethylamino) -3-bromo Phenyl] -s-triazine and the like are preferable.

  As the usage-amount of the said polymerization initiator, 0.1-20 mass% is preferable with respect to the usage-amount of the said polymerizable monomer, and 0.5-10 mass% is more preferable.

-Extender pigment-
The extender pigment is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include silica, zinc oxide, barium sulfate, barium carbonate, alumina white, calcium carbonate, and calcium stearate. These may be used individually by 1 type, and may use 2 or more types together, Among these, an uncolored thing is preferable and a silica, zinc oxide, etc. are especially preferable.

Specific examples of the silica include R-972, # 200 (manufactured by Nippon Aerosil Co., Ltd.), Seahoster KE (manufactured by Nippon Shokubai Chemical Industry Co., Ltd.), Snowtex (trade names: methanol silica sol, MA-ST-M, IPA). Commercially available products such as -ST, MEK-ST, MIBK-ST, Nissan Chemical Industries, Ltd.) are preferred.
Specific examples of the zinc oxide include commercially available products such as ZnO-100 and ZnO-200 (manufactured by Sumitomo Cement Co., Ltd.).
Among these, colloidal silica represented by Snowtex is particularly preferable.

  The extender pigment may be improved in dispersibility by performing a surface treatment or the like with an appropriately selected silane coupling agent or titanate coupling agent.

The particle size of the extender is preferably 0.01 to 0.5 μm, more preferably 0.02 to 0.4 μm.
When the particle size is less than 0.01 μm, the dispersion stability is deteriorated, and when it exceeds 0.5 μm, the unevenness on the surface of the photosensitive layer increases, which is not preferable.

The addition amount of the extender is preferably 5 to 50% by mass, more preferably 10 to 40% by mass, and particularly preferably 15 to 35% by mass based on the total solid content in the photosensitive composition.
When the amount of the extender pigment is less than 5% by mass, sufficient film strength cannot be obtained, and thickness reduction during transfer and brush damage during development may not be prevented. If it exceeds 50%, bubbles are likely to enter during transfer, and the transparency of the photosensitive layer may be lowered, which is not preferable.

The extender pigment may be used in a state of being uniformly dispersed in a suitably selected dispersant.
The dispersant is not particularly limited and may be appropriately selected depending on the intended purpose. 411, PA-111 (manufactured by Ajinomoto Co., Inc.), EFKA-766, 5244, 71, 65, 64, 63, 44 (manufactured by EFKA Chemicals), and the like. Among these, Solsperse 20000 is preferable.
The amount of the dispersant used is preferably 0.5 to 100 parts by mass with respect to 100 parts by mass of the extender pigment from the viewpoint of obtaining a dispersion having good dispersibility.

Dispersion stability can be improved by adding a surfactant to the dispersion solution obtained by dispersing the extender pigment with the dispersant.
The surfactant is not particularly limited and includes various surfactants, for example, anionic surfactants typified by alkyl naphthalene sulfonate and phosphate ester salts, and amine salts. A cationic surfactant, an aminocarboxylic acid, an amphoteric surfactant represented by a betaine type, and the like.

The photosensitive composition may contain a colorant appropriately selected according to the purpose.
There is no restriction | limiting in particular as said coloring agent, Although it can select suitably according to the objective, For example, an organic pigment, an inorganic pigment, dye, etc. are mentioned. These may be used individually by 1 type and may use 2 or more types together, Among these, what is decolored by the below-mentioned development process and heat processing is preferable.

  Examples of the colorant include coloring materials described in paragraphs 0038 to 0040 of JP-A-2005-17716, pigments described in paragraphs 0068 to 0072 of JP-A-2005-361447, and JP-A-2005. Preferred examples include the colorants described in paragraph Nos. 0080 to 0088 of JP-A-17521.

-Other ingredients-
The other component is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include various additives such as a polymerization inhibitor, an ultraviolet absorber, and a plasticizer.

The polymerization inhibitor is not particularly limited and may be appropriately selected depending on the intended purpose. For example, 4-methoxyphenol, hydroquinone, alkyl or aryl-substituted hydroquinone, t-butylcatechol, pyrogallol, 2-hydroxybenzophenone, 4-methoxy-2-hydroxybenzophenone, cuprous chloride, phenothiazine, chloranil, naphthylamine, β-naphthol, 2,6-di-t-butyl-4-cresol, 2,2′-methylenebis (4-methyl-6) -T-butylphenol), pyridine, nitrobenzene, dinitrobenzene, picric acid, 4-toluidine, methylene blue, copper and organic chelating agent reactant, methyl salicylate, phenothiazine, nitroso compound, chelate of nitroso compound and Al, etc. .
As content of the said polymerization inhibitor, 0.0001-10 mass% is preferable with respect to all the components of a photosensitive composition, 0.0005-5 mass% is more preferable, 0.001-1 mass% is especially. preferable.

Examples of the ultraviolet absorber include salicylate-based, benzophenone-based, benzotriazole-based, cyanoacrylate-based, nickel chelate-based, hindered amine-based compounds, etc. in addition to the compounds described in JP-A-5-72724.
Specifically, phenyl salicylate, 4-t-butylphenyl salicylate, 2,4-di-t-butylphenyl-3 ′, 5′-di-t-4′-hydroxybenzoate, 4-t-butylphenyl salicylate 2,4-di-hydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octoxybenzophenone, 2- (2′-hydroxy-5′-methylphenyl) benzotriazole, 2- (2'-hydroxy-3'-t-butyl-5'-methylphenyl) -5-chlorobenzotriazole, ethyl-2-cyano-3,3-di-phenyl acrylate, 2,2'-hydroxy-4- Methoxybenzophenone, nickel dibutyldithiocarbamate, bis (2,2,6,6-tetramethol-4-pyridine) -seba 4-t-butylphenyl salicylate, phenyl salicylate, 4-hydroxy-2,2,6,6-tetramethylpiperidine condensate, succinic acid-bis (2,2,6,6-tetramethyl-4 -Piperenyl) -ester, 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, 7-{[4-chloro-6- (diethylamino) -5 Triazin-2-yl] amino} -3-phenylcoumarin and the like.
In addition, 0.5-15 mass% is preferable, as for content of the ultraviolet absorber with respect to the total solid of a photosensitive composition, 1-12 mass% is more preferable, and 1.2-10 mass% is especially preferable.

The plasticizer may be added to control film physical properties (flexibility) of the photosensitive layer.
Examples of the plasticizer include dimethyl phthalate, dibutyl phthalate, diisobutyl phthalate, diheptyl phthalate, dioctyl phthalate, dicyclohexyl phthalate, ditridecyl phthalate, butyl benzyl phthalate, diisodecyl phthalate, diphenyl phthalate, diallyl phthalate, octyl capryl phthalate, and the like. Phthalic acid esters: Triethylene glycol diacetate, tetraethylene glycol diacetate, dimethylglycol phthalate, ethyl phthalyl ethyl glycolate, methyl phthalyl ethyl glycolate, butyl phthalyl butyl glycolate, triethylene glycol dicabrylate, etc. Glycol esters of tricresyl phosphate, triphenyl phosphate, etc. Acid esters; Amides such as 4-toluenesulfonamide, benzenesulfonamide, Nn-butylbenzenesulfonamide, Nn-butylacetamide; diisobutyl adipate, dioctyl adipate, dimethyl sebacate, dibutyl sepacate, dioctyl Aliphatic dibasic acid esters such as sepacate, dioctyl azelate, dibutyl malate; triethyl citrate, tributyl citrate, glycerin triacetyl ester, butyl laurate, 4,5-diepoxycyclohexane-1,2-dicarboxylic acid Examples include glycols such as dioctyl acid, polyethylene glycol, and polypropylene glycol.

  As content of the said plasticizer, 0.1-50 mass% is preferable with respect to all the components of the said photosensitive layer, 0.5-40 mass% is more preferable, 1-30 mass% is especially preferable.

  When the photosensitive composition contains the surfactant, the fluidity as a coating liquid is improved, and the adhesion of the liquid in a spin coater nozzle or pipe or container used in the coating process is improved. Since the residue remaining as dirt in the nozzle can be effectively reduced, it is possible to reduce the amount of cleaning liquid and work time required for cleaning when switching the coating liquid, and to improve the productivity of the internal structure of the cell. . In addition, it is possible to improve surface unevenness and the like that occur when the in-cell structure is formed.

  The negative photosensitive composition for forming the negative photosensitive layer can be prepared using a solvent. There is no restriction | limiting in particular as said solvent, According to the objective, it can select suitably, The thing similar to the said positive photosensitive layer can be used.

The thickness of the negative photosensitive layer is preferably from 0.3 to 10 μm, more preferably from 0.75 to 6 μm, and particularly preferably from 1.0 to 3 μm.
If the layer thickness is less than 0.3 μm, pinholes are likely to occur when the coating solution for the photosensitive layer is applied, and the production suitability may be reduced. If the thickness exceeds 10 μm, unexposed portions are removed during development. May take a long time

<Base material>
The substrate used in the photosensitive layer forming step is not particularly limited and may be appropriately selected from known materials having high surface smoothness to those having an uneven surface according to the purpose. However, a plate-like substrate (substrate) is preferable. Specifically, a glass plate (for example, soda glass plate, glass plate sputtered with silicon oxide, non-alkali glass plate, quartz glass plate, etc.), synthetic resin property Film, paper, metal plate and the like.

[Exposure process]
The exposure step is an exposure head provided with a light irradiation means and a light modulation means for the photosensitive layer, and the column direction of the picture element portions is a predetermined set inclination angle with respect to the scanning direction of the exposure head. An exposure head arranged so as to form θ is used, and the exposure head is subjected to N multiple exposures (where N is a natural number of 2 or more) of the usable pixel parts by the use pixel part specifying means. The pixel part to be used is specified, and for the exposure head, the pixel part is specified by the pixel part control unit so that only the pixel part specified by the used pixel part specifying unit is involved in the exposure. And performing exposure by moving the exposure head relative to the photosensitive layer in the scanning direction.

In the present invention, “N double exposure” means that the exposed surface is irradiated with a straight line parallel to the scanning direction of the exposure head in almost all of the exposed region on the exposed surface of the photosensitive layer. This means exposure by setting that intersects N light spot rows (pixel rows). Here, the “light spot array (pixel array)” is a direction in which the angle formed with the scanning direction of the exposure head is smaller in the array of light spots (pixels) as pixel units generated by the pixel unit. Refers to a sequence of Note that the arrangement of the picture element portions is not necessarily a rectangular lattice shape, and may be, for example, an arrangement of parallelograms. Here, “substantially all areas” of the exposure area is described as a straight line parallel to the scanning direction of the exposure head by tilting the pixel part rows at both side edges of each picture element part. Since the number of drawing element rows of the used drawing element parts to be crossed decreases, even if it is used to connect a plurality of exposure heads in such a case, it is parallel to the scanning direction due to errors in the mounting angle and arrangement of the exposure heads. The number of pixel parts in the used pixel part that intersect with a straight line may slightly increase or decrease, and the connection between the pixel parts in each used pixel part is only a fraction of the resolution. However, due to errors such as the mounting angle and the arrangement of the picture element parts, the pitch of the picture element parts along the direction orthogonal to the scanning direction does not exactly match the pitch of the picture element parts of other parts, and is parallel to the scanning direction. The number of used pixel parts that intersect with the straight line may increase or decrease within a range of ± 1. It is an order. In the following description, N multiple exposures where N is a natural number of 2 or more are collectively referred to as “multiple exposure”. Further, in the following description, “N multiple drawing” and “multiple exposure” are used as terms corresponding to “N double exposure” and “multiple exposure” for an embodiment in which the exposure apparatus or exposure method of the present invention is implemented as a drawing apparatus or drawing method. The term “multiple drawing” shall be used.
N in the N-fold exposure is not particularly limited as long as it is a natural number of 2 or more, and can be appropriately selected according to the purpose. However, a natural number of 3 or more is preferable, and a natural number of 3 or more and 7 or less is more preferable. .

In the exposure step, the exposure is preferably performed in a poor oxygen atmosphere, for example, in an inert gas atmosphere or in a state where an oxygen blocking layer is provided.
The exposure method in an oxygen-poor atmosphere is not particularly limited and may be appropriately selected depending on the intended purpose.For example, a method of spraying an inert gas directly on the surface of the photosensitive layer, or one side of the frame-shaped frame is opened. A sample on which a photosensitive layer to be exposed is placed in an exposure space in a sample stage where an inert gas introduction hole is formed on at least one remaining side, and the inert gas introduction hole is inert from the inert gas introduction hole. For example, a method may be used in which exposure is performed while introducing a gas to cover the surface of the photosensitive layer with an inert gas.
In addition, it is possible to introduce an inert gas into the sealed space under reduced pressure using the exposure space as a sealed space.
The inert gas is not particularly limited as long as it can prevent the polymerization reaction of the photosensitive layer from being inhibited by the influence of oxygen, and can be appropriately selected according to the purpose. For example, nitrogen, helium, argon, etc. Is mentioned.

Hereinafter, an embodiment of a method for manufacturing an in-cell structure of the present invention and an exposure apparatus that is preferably used for the method for manufacturing the in-cell structure will be described with reference to the drawings.
As said exposure apparatus, when the said base material is a glass substrate etc., a flat bed type exposure apparatus is mentioned suitably. When the base material is a flexible substrate or the like, an outer drum type exposure device, an inner drum type exposure device, or the like may be used. Hereinafter, a flat bed type exposure apparatus will be described.

<Exposure device>
As the exposure apparatus, as shown in FIG. 1, a flat plate shape that adsorbs and holds a laminated body (hereinafter referred to as “photosensitive material 12” or “photosensitive layer 12”) in which the photosensitive layers are laminated. The moving stage 14 is provided. Two guides 20 extending along the stage moving direction are installed on the upper surface of the thick plate-shaped installation table 18 supported by the four legs 16. The stage 14 is arranged so that the longitudinal direction thereof faces the stage moving direction, and is supported by the guide 20 so as to be reciprocally movable. The exposure apparatus 10 is provided with a stage driving device (not shown) that drives the stage 14 along the guide 20.

  A U-shaped gate 22 is provided at the center of the installation base 18 so as to straddle the movement path of the stage 14. Each end of the U-shaped gate 22 is fixed to both side surfaces of the installation base 18. A scanner 24 is provided on one side across the gate 22, and a plurality of (for example, two) sensors 26 that detect the front and rear ends of the photosensitive material 12 are provided on the other side. The scanner 24 and the sensor 26 are respectively attached to the gate 22 and fixedly arranged above the moving path of the stage 14. The scanner 24 and the sensor 26 are connected to a controller (not shown) that controls them.

  Here, for explanation, an X axis and a Y axis orthogonal to each other are defined in a plane parallel to the surface of the stage 14 as shown in FIG.

  A slit formed in a “<” shape that opens in the direction of the X-axis at the upstream edge (hereinafter sometimes simply referred to as “upstream”) along the scanning direction of the stage 14. 10 are formed at equal intervals. Each slit 28 includes a slit 28 a located on the upstream side and a slit 28 b located on the downstream side. The slit 28a and the slit 28b are orthogonal to each other, and the slit 28a has an angle of −45 degrees and the slit 28b has an angle of +45 degrees with respect to the X axis.

  The position of the slit 28 is substantially coincident with the center of the exposure head 30. Further, the size of each slit 28 is set to sufficiently cover the width of the exposure area 32 by the corresponding exposure head 30. Further, the position of the slit 28 may be substantially coincident with the center position of the overlapping portion between the adjacent exposed regions 34. In this case, the size of each slit 28 is set so as to sufficiently cover the width of the overlapping portion between the exposed regions 34.

  In the position below each slit 28 inside the stage 14, single cell type light detection as a light spot position detecting means for detecting a light spot as a pixel unit in a used pixel part designation process described later. A vessel (not shown) is incorporated. In addition, each photodetector is connected to an arithmetic unit (not shown) as a pixel part selection means for selecting the pixel part in the used pixel part specifying process described later.

  The operation mode of the exposure apparatus at the time of exposure may be a mode in which exposure is continuously performed while the exposure head is constantly moved, or at each movement destination position while the exposure head is moved stepwise. The exposure head may be stationary and the exposure operation may be performed.

<< Exposure head >>
Each exposure head 30 is connected to the scanner 24 so that each pixel portion (micromirror) row direction of an internal digital micromirror device (DMD) 36 described later forms a predetermined set inclination angle θ with the scanning direction. It is attached. For this reason, the exposure area 32 by each exposure head 30 is a rectangular area inclined with respect to the scanning direction. As the stage 14 moves, a strip-shaped exposed region 34 is formed in the photosensitive layer 12 for each exposure head 30. In the example shown in FIGS. 2 and 3B, the scanner 24 includes ten exposure heads arranged in a substantially matrix of 2 rows and 5 columns.
In the following description, when the individual exposure heads arranged in the mth row and the nth column are indicated, the exposure head 30 _mn is indicated, and exposure by the individual exposure heads arranged in the mth row and the nth column is performed. When an area is indicated, it is expressed as an exposure area 32 _mn .

Further, as shown in FIGS. 3A and 3B, each of the exposure heads 30 in each row arranged in a line so that each of the strip-shaped exposed regions 34 partially overlaps the adjacent exposed region 34 is In the arrangement direction, they are shifted by a predetermined interval (a natural number times the long side of the exposure area, twice in this embodiment). Therefore, can not be exposed portion between the exposure area _{32 11} in the first row and the exposure area _{32 12,} it can be exposed by the second row of the exposure area _{32 21.}

  As shown in FIGS. 4 and 5, each of the exposure heads 30 includes a light modulation unit (spatial light modulation element that modulates each pixel unit) that modulates incident light for each pixel unit according to image data. DMD36 (manufactured by Texas Instruments, USA). The DMD 36 is connected to a controller serving as a pixel part control unit including a data processing unit and a mirror drive control unit. The data processing unit of this controller generates a control signal for driving and controlling each micromirror in the use area on the DMD 36 for each exposure head 30 based on the input image data. The mirror drive control unit controls the angle of the reflection surface of each micromirror of the DMD 36 for each exposure head 30 based on the control signal generated by the image data processing unit.

  As shown in FIG. 4, on the light incident side of the DMD 36, there is provided a laser emission portion in which the emission end portion (light emission point) of the optical fiber is arranged in a line along the direction that coincides with the long side direction of the exposure area 32. The fiber array light source 38, the lens system 40 for correcting the laser light emitted from the fiber array light source 38 and condensing it on the DMD, and the mirror 42 for reflecting the laser light transmitted through the lens system 40 toward the DMD 36 Arranged in order. In FIG. 4, the lens system 40 is schematically shown.

  As shown in detail in FIG. 5, the lens system 40 has a pair of combination lenses 44 that collimate the laser light emitted from the fiber array light source 38, and the light quantity distribution of the collimated laser light becomes uniform. A pair of combination lenses 46 to be corrected in this way, and a condensing lens 48 that condenses the laser light whose light quantity distribution has been corrected on the DMD 36.

  Further, on the light reflection side of the DMD 36, a lens system 50 that images the laser light reflected by the DMD 36 on the exposed surface of the photosensitive layer 12 is disposed. The lens system 50 includes two lenses 52 and 54 arranged so that the DMD 36 and the exposed surface of the photosensitive layer 12 have a conjugate relationship.

  In the present embodiment, the laser light emitted from the fiber array light source 38 is substantially magnified five times, and then the light from each micromirror on the DMD 36 is reduced to about 5 μm by the lens system 50. Is set to

-Light modulation means-
The light modulating means has n (where n is a natural number of 2 or more) two-dimensionally arranged image elements, and can control the image elements according to the pattern information. If it is, there will be no restriction | limiting in particular, According to the objective, it can select suitably, For example, a spatial light modulation element is preferable.

  Examples of the spatial light modulator include a digital micromirror device (DMD), a MEMS (Micro Electro Mechanical Systems) type spatial light modulator (SLM), and modulates transmitted light by an electro-optic effect. An optical element (PLZT element), a liquid crystal optical shutter (FLC), etc. are mentioned, Among these, DMD is mentioned suitably.

Moreover, it is preferable that the said light modulation means has a pattern signal generation means which produces | generates a control signal based on the pattern information to form. In this case, the light modulation unit modulates light according to the control signal generated by the pattern signal generation unit.
There is no restriction | limiting in particular as said control signal, According to the objective, it can select suitably, For example, a digital signal is mentioned suitably.

Hereinafter, an example of the light modulation means will be described with reference to the drawings.
As shown in FIG. 6, the DMD 36 is a mirror device in which a large number of micromirrors 58 are arranged in a lattice pattern on a SRAM cell (memory cell) 56 as a pixel portion constituting each pixel (pixel). . In this embodiment, a DMD 36 in which 1024 columns × 768 rows of micromirrors 58 are arranged is used. Among these, the micromirrors 58 that can be driven by a controller connected to the DMD 36, that is, usable micromirrors 58 are 1024 columns × 256 rows. Suppose only. The data processing speed of the DMD 36 is limited, and the modulation speed per line is determined in proportion to the number of micromirrors to be used. Thus, by using only some of the micromirrors in this way, Modulation speed increases. Each micromirror 58 is supported by a support column, and a material having high reflectivity such as aluminum is deposited on the surface thereof. In the present embodiment, the reflectance of each micromirror 58 is 90% or more, and the arrangement pitch thereof is 13.7 μm in both the vertical direction and the horizontal direction. The SRAM cell 56 is of a silicon gate CMOS manufactured in a normal semiconductor memory manufacturing line via a support including a hinge and a yoke, and the whole is configured monolithically (integrated).

  When an image signal representing the density of each point constituting a desired two-dimensional pattern in binary is written in the SRAM cell (memory cell) 56 of the DMD 36, each micromirror 58 supported by the column is centered on the diagonal line. As shown in FIG. 1, the inclination is inclined to ± α degrees (for example, ± 10 degrees) with respect to the substrate side on which the DMD 36 is disposed. FIG. 7A shows a state in which the micromirror 58 is tilted to + α degrees in the on state, and FIG. 7B shows a state in which the micromirror 58 is tilted to −α degrees in the off state. In this way, by controlling the inclination of the micromirror 58 in each pixel of the DMD 36 as shown in FIG. 6 in accordance with the image signal, the laser light B incident on the DMD 36 moves in the inclination direction of each micromirror 58. Reflected.

  FIG. 6 shows an example in which a part of the DMD 36 is enlarged and each micromirror 58 is controlled to + α degrees or α degrees. The on / off control of each micromirror 58 is performed by the controller connected to the DMD 36. Further, a light absorber (not shown) is arranged in the direction in which the laser beam B reflected by the off-state micromirror 58 travels.

-Light irradiation means-
The light irradiation means is not particularly limited and may be appropriately selected depending on the purpose. For example, (ultra) high pressure mercury lamp, xenon lamp, carbon arc lamp, halogen lamp, copier, fluorescent tube, LED, etc. , A known light source such as a semiconductor laser, or a means capable of synthesizing and irradiating two or more lights. Among these, a means capable of synthesizing and irradiating two or more lights is preferable.
The light emitted from the light irradiation means is, for example, an electromagnetic wave that passes through the support and activates the photopolymerization initiator and sensitizer used when the light is irradiated through the support. In particular, ultraviolet to visible light, electron beam, X-ray, laser beam, and the like can be mentioned. Of these, laser beam is preferable, and a laser combining two or more lights (hereinafter, referred to as “combined laser”). More preferred. Even when light irradiation is performed after the support is peeled off, the same light can be used.

The wavelength of the ultraviolet to visible light is preferably, for example, 300 to 1,500 nm, more preferably 320 to 800 nm, and particularly preferably 330 nm to 650 nm.
As a wavelength of the said laser beam, 200-1500 nm is preferable, for example, 300-800 nm is more preferable, 330 nm-500 nm is still more preferable, 400 nm-450 nm is especially preferable.

  Examples of means capable of irradiating the combined laser include, for example, a plurality of lasers, a multimode optical fiber, and collective optics for condensing the laser beams respectively emitted from the plurality of lasers and coupling them to the multimode optical fiber. Means having a system are preferred.

Hereinafter, means (fiber array light source) capable of irradiating the combined laser will be described with reference to the drawings.
As shown in FIG. 8, the fiber array light source 38 includes a plurality of (for example, 14) laser modules 60, and one end of a multimode optical fiber 62 is coupled to each laser module 60. An optical fiber 64 having a cladding diameter smaller than that of the multimode optical fiber 62 is coupled to the other end of the multimode optical fiber 62. As shown in detail in FIG. 9, seven ends of the optical fiber 64 opposite to the multimode optical fiber 62 are arranged along the direction orthogonal to the scanning direction, and these are arranged in two rows to form the laser emitting unit 66. Is configured.

  As shown in FIG. 9, the laser emitting portion 66 constituted by the end portion of the optical fiber 64 is sandwiched and fixed between two support plates 68 having a flat surface. Moreover, it is desirable that a transparent protective plate such as glass is disposed on the light emitting end face of the optical fiber 64 for protection. The light exit end face of the optical fiber 64 has a high light density and is likely to collect dust and easily deteriorate. However, by arranging the protective plate as described above, it is possible to prevent the dust from adhering to the end face and to delay the deterioration. Can do.

  For example, as shown in FIG. 25, such an optical fiber is formed by coaxially connecting an optical fiber 64 having a length of 1 to 30 cm with a small cladding diameter at the tip portion on the laser light emission side of a multimode optical fiber 62 having a large cladding diameter. Can be obtained by linking them together. In the two optical fibers, the incident end face of the optical fiber 64 is fused and joined to the outgoing end face of the multimode optical fiber 62 so that the central axes of both optical fibers coincide. As described above, the diameter of the core 64 a of the optical fiber 64 is the same as the diameter of the core 62 a of the multimode optical fiber 62.

  In addition, a short optical fiber in which an optical fiber having a short cladding diameter and a large cladding diameter is fused with an optical fiber having a small cladding diameter may be coupled to the output end of the multimode optical fiber 62 via a ferrule or an optical connector. Good. By detachably coupling using a connector or the like, the tip portion can be easily replaced when an optical fiber having a small cladding diameter is broken, and the cost required for exposure head maintenance can be reduced. Hereinafter, the optical fiber 64 may be referred to as an emission end portion of the multimode optical fiber 62.

  The multimode optical fiber 62 and the optical fiber 64 may be any of a step index type optical fiber, a graded index type optical fiber, and a composite type optical fiber. For example, a step index type optical fiber manufactured by Mitsubishi Cable Industries, Ltd. can be used. In the present embodiment, the multimode optical fiber 62 and the optical fiber 64 are step index type optical fibers, and the multimode optical fiber 62 has a cladding diameter = 125 μm, a core diameter = 50 μm, NA = 0.2, an incident end face. The transmittance of the coat is 99.5% or more, and the optical fiber 64 has a clad diameter = 60 μm, a core diameter = 50 μm, and NA = 0.2.

  In general, in the laser light in the infrared region, the propagation loss increases as the cladding diameter of the optical fiber is reduced. For this reason, a suitable cladding diameter is determined according to the wavelength band of the laser beam. However, the shorter the wavelength, the smaller the propagation loss. In the case of laser light having a wavelength of 405 nm emitted from a GaN-based semiconductor laser, the cladding thickness {(cladding diameter−core diameter) / 2} is set to an infrared light having a wavelength band of 800 nm. The propagation loss hardly increases even if it is about ½ of the case of propagating infrared light and about ¼ of the case of propagating infrared light in the 1.5 μm wavelength band for communication. Therefore, the cladding diameter can be reduced to 60 μm.

  However, the cladding diameter of the optical fiber is not limited to 60 μm. The clad diameter of the optical fiber used in the conventional fiber array light source is 125 μm. However, the smaller the clad diameter, the deeper the focal depth, so the clad diameter of the optical fiber is preferably 80 μm or less, more preferably 60 μm or less. 40 μm or less is more preferable. On the other hand, since the core diameter needs to be at least 3 to 4 μm, the cladding diameter of the optical fiber 64 is preferably 10 μm or more.

  The laser module 60 is composed of a combined laser light source (fiber array light source) shown in FIG. This combined laser light source includes a plurality of (for example, seven) chip-like lateral multimode or single mode GaN-based semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6 arranged on the heat block 110, And LD7, collimator lenses L1, L2, L3, L4, L5, L6, and L7 provided corresponding to each of the GaN-based semiconductor lasers LD1 to LD7, one condenser lens 200, and one multimode. And an optical fiber 62. The number of semiconductor lasers is not limited to seven. For example, as many as 20 semiconductor laser beams can be incident on a multimode optical fiber having a cladding diameter = 60 μm, a core diameter = 50 μm, and NA = 0.2. In addition, the number of optical fibers can be further reduced.

  The GaN-based semiconductor lasers LD1 to LD7 all have the same oscillation wavelength (for example, 405 nm), and the maximum output is also all the same (for example, 100 mW for the multimode laser and 30 mW for the single mode laser). As the GaN-based semiconductor lasers LD1 to LD7, lasers having an oscillation wavelength other than the above 405 nm in a wavelength range of 350 nm to 450 nm may be used.

  As shown in FIGS. 27 and 28, the combined laser light source is housed in a box-shaped package 400 having an upper opening together with other optical elements. The package 400 includes a package lid 410 created so as to close the opening. After the degassing process, a sealing gas is introduced, and the package 400 and the package lid are closed by closing the opening of the package 400 with the package lid 410. The combined laser light source is hermetically sealed in a closed space (sealed space) formed by the reference numeral 410.

  A base plate 420 is fixed to the bottom surface of the package 400, and the heat block 110, a condensing lens holder 450 that holds the condensing lens 200, and the multimode optical fiber 62 are disposed on the top surface of the base plate 420. A fiber holder 460 that holds the incident end is attached. The exit end of the multimode optical fiber 62 is drawn out of the package from an opening formed in the wall surface of the package 400.

  A collimator lens holder 440 is attached to the side surface of the heat block 110, and the collimator lenses L1 to L7 are held. An opening is formed in the lateral wall surface of the package 400, and a wiring 470 for supplying a driving current to the GaN semiconductor lasers LD1 to LD7 is drawn out of the package through the opening.

  In FIG. 28, in order to avoid complication of the drawing, only the GaN semiconductor laser LD7 is numbered among the plurality of GaN semiconductor lasers, and only the collimator lens L7 is numbered among the plurality of collimator lenses. is doing.

  FIG. 29 shows a front shape of a mounting portion of the collimator lenses L1 to L7. Each of the collimator lenses L <b> 1 to L <b> 7 is formed in a shape in which a region including the optical axis of a circular lens having an aspherical surface is cut out in a parallel plane. This elongated collimator lens can be formed, for example, by molding resin or optical glass. The collimator lenses L1 to L7 are closely arranged in the light emitting point arrangement direction so that the length direction is orthogonal to the light emitting point arrangement direction of the GaN-based semiconductor lasers LD1 to LD7 (left-right direction in FIG. 29).

  On the other hand, each of the GaN-based semiconductor lasers LD1 to LD7 includes an active layer having a light emission width of 2 μm, and each of the laser beams B1 in a state parallel to the active layer and a divergence angle in a direction perpendicular to the active layer, for example, 10 ° and 30 °. A laser emitting ~ B7 is used. These GaN-based semiconductor lasers LD1 to LD7 are arranged so that the light emitting points are arranged in a line in a direction parallel to the active layer.

Therefore, in the laser beams B1 to B7 emitted from the respective light emitting points, the direction in which the divergence angle is large coincides with the length direction and the divergence angle is small with respect to the elongated collimator lenses L1 to L7 as described above. Incident light is incident in a state where the direction coincides with the width direction (direction perpendicular to the length direction). That is, the collimator lenses L1 to L7 have a width of 1.1 mm and a length of 4.6 mm, and the horizontal and vertical beam diameters of the laser beams B1 to B7 incident thereon are 0.9 mm and 2. 6 mm. In addition, each of the collimator lenses L1 to L7 has a focal length f ₁ = 3 mm, NA = 0.6, and a lens arrangement pitch = 1.25 mm.

The condensing lens 200 is formed by cutting a region including the optical axis of a circular lens having an aspherical surface into a long and narrow plane in parallel planes, and is long in the arrangement direction of the collimator lenses L1 to L7, that is, in the horizontal direction and short in the direction perpendicular thereto. Is formed. The condenser lens 200 has a focal length f ₂ = 23 mm and NA = 0.2. This condensing lens 200 is also formed by molding resin or optical glass, for example.

  In addition, since the light emitting means for illuminating the DMD uses a high-intensity fiber array light source in which the output ends of the optical fibers of the combined laser light source are arranged in an array, it has high output and a deep focal depth An exposure apparatus can be realized. Furthermore, since the output of each fiber array light source is increased, the number of fiber array light sources required to obtain a desired output is reduced, and the cost of the exposure apparatus can be reduced.

  In addition, since the cladding diameter at the exit end of the optical fiber is smaller than the cladding diameter at the entrance end, the diameter of the light emitting portion is further reduced, and the brightness of the fiber array light source can be increased. Thereby, an exposure apparatus having a deeper depth of focus can be realized. For example, even in the case of ultra-high resolution exposure with a beam diameter of 1 μm or less and a resolution of 0.1 μm or less, a deep depth of focus can be obtained, and high-speed and high-definition exposure is possible. Therefore, it is suitable for a thin film transistor (TFT) exposure process that requires high resolution.

  The light irradiating means is not limited to a fiber array light source including a plurality of the combined laser light sources, and for example, emits laser light incident from a single semiconductor laser having one light emitting point. A fiber array light source in which fiber light sources including optical fibers are arrayed can be used.

  Moreover, as a light irradiation means provided with a plurality of light emitting points, for example, as shown in FIG. 30, a laser in which a plurality of (for example, seven) chip-shaped semiconductor lasers LD1 to LD7 are arranged on a heat block 110. An array can be used. Further, a chip-shaped multi-cavity laser 110 shown in FIG. 31A in which a plurality of (for example, five) light emitting points 111a are arranged in a predetermined direction is known. Since the multicavity laser 111 can arrange the light emitting points with high positional accuracy as compared with the case where the chip-shaped semiconductor lasers are arranged, it is easy to multiplex the laser beams emitted from the respective light emitting points. However, as the number of light emitting points increases, the multi-cavity laser 111 is likely to be bent at the time of laser manufacture. Therefore, the number of light emitting points 111a is preferably 5 or less.

  As the light irradiation means, as shown in FIG. 31B, a plurality of multi-cavity lasers 111 are arranged on the heat block 110 in the same direction as the arrangement direction of the light emitting points 111a of each chip. A multi-cavity laser array can be used as a laser light source.

  The combined laser light source is not limited to one that combines laser beams emitted from a plurality of chip-shaped semiconductor lasers. For example, as shown in FIG. 32, a combined laser light source including a chip-shaped multicavity laser 111 having a plurality of (for example, three) emission points 111a can be used. The combined laser light source includes a multi-cavity laser 111, a single multi-mode optical fiber 62, and a condenser lens 200. The multicavity laser 111 can be composed of, for example, a GaN laser diode having an oscillation wavelength of 405 nm.

  In the above-described configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111 a of the multicavity laser 111 is collected by the condenser lens 200 and enters the core 62 a of the multimode optical fiber 62. The laser light incident on the core 62a propagates in the optical fiber, is combined into one, and is emitted.

  A plurality of light emitting points 111 a of the multicavity laser 111 are arranged in parallel within a width substantially equal to the core diameter of the multimode optical fiber 62, and a focal point substantially equal to the core diameter of the multimode optical fiber 62 is formed as the condenser lens 200. By using a convex lens of a distance or a rod lens that collimates the outgoing beam from the multicavity laser 111 only in a plane perpendicular to the active layer, the coupling efficiency of the laser beam B to the multimode optical fiber 62 can be increased. it can.

  As shown in FIG. 33, a multi-cavity laser 111 having a plurality of (for example, three) emission points is used, and a plurality of (for example, nine) multi-cavity lasers 111 are equidistant from each other on the heat block 110. A combined laser light source including the laser array 140 arranged in (1) can be used. The plurality of multi-cavity lasers 111 are arranged and fixed in the same direction as the arrangement direction of the light emitting points 111a of each chip.

  This combined laser light source includes a laser array 140, a plurality of lens arrays 114 arranged corresponding to each multi-cavity laser 111, and a single rod arranged between the laser array 140 and the plurality of lens arrays 114. The lens 113, one multimode optical fiber 130, and a condenser lens 120 are provided. The lens array 114 includes a plurality of microlenses corresponding to the emission points of the multicavity laser 110.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111 a of the plurality of multi-cavity lasers 111 is condensed in a predetermined direction by the rod lens 113 and then each microlens of the lens array 114. It becomes parallel light. The collimated laser beam L is condensed by the condenser lens 200 and enters the core 62 a of the multimode optical fiber 62. The laser light incident on the core 62a propagates in the optical fiber, is combined into one, and is emitted.

  Still another example of the combined laser light source will be described. As shown in FIGS. 34A and 34B, this combined laser light source has a heat block 182 having an L-shaped cross section in the optical axis direction mounted on a substantially rectangular heat block 180 and is housed between two heat blocks. A space is formed. On the upper surface of the L-shaped heat block 182, a plurality of (for example, two) multi-cavity lasers 111 in which a plurality of light emitting points (for example, five) are arranged in an array form the light emitting points 111a of each chip. It is arranged and fixed at equal intervals in the same direction as the arrangement direction.

  A concave portion is formed in the substantially rectangular heat block 180, and a plurality of (for example, two) light emitting points (for example, five) are arranged in an array on the upper surface of the space side of the heat block 180. The multi-cavity laser 110 is arranged such that its emission point is located on the same vertical plane as the emission point of the laser chip arranged on the upper surface of the heat block 182.

  On the laser beam emission side of the multi-cavity laser 111, a collimator lens array 184 in which collimator lenses are arranged corresponding to the light emission points 111a of the respective chips is arranged. In the collimating lens array 184, the length direction of each collimating lens coincides with the direction in which the divergence angle of the laser beam is large (the fast axis direction), and the width direction of each collimating lens is the direction in which the divergence angle is small (slow axis direction). They are arranged to match. Thus, by collimating and integrating the collimating lenses, the space utilization efficiency of the laser light can be improved, the output of the combined laser light source can be increased, and the number of parts can be reduced and the cost can be reduced. .

  Further, on the laser beam emitting side of the collimating lens array 184, there is one multimode optical fiber 62 and a condensing lens 200 that condenses and couples the laser beam to the incident end of the multimode optical fiber 62. Is arranged.

  In the above configuration, each of the laser beams B emitted from each of the plurality of light emitting points 111a of the plurality of multi-cavity lasers 111 arranged on the laser blocks 180 and 182 is collimated by the collimating lens array 184 and collected. The light is collected by the optical lens 200 and is incident on the core 62 a of the multimode optical fiber 62. The laser light incident on the core 62a propagates in the optical fiber, is combined into one, and is emitted.

  As described above, the combined laser light source can achieve particularly high output by the multistage arrangement of multicavity lasers and the array of collimating lenses. By using this combined laser light source, a higher-intensity fiber array light source or bundle fiber light source can be formed, which is particularly suitable as a fiber light source constituting the laser light source of the exposure apparatus of the present invention.

  A laser module in which each of the combined laser light sources is housed in a casing and the emission end portion of the multimode optical fiber 62 is pulled out from the casing can be configured.

  In addition, the other end of the multimode optical fiber of the combined laser light source is coupled with another optical fiber having the same core diameter as the multimode optical fiber and a cladding diameter smaller than the multimode optical fiber. However, for example, a multimode optical fiber having a cladding diameter of 125 μm, 80 μm, 60 μm or the like may be used without coupling another optical fiber to the emission end.

<< Used pixel part designation means >>
The used pixel part specifying means includes a light spot position detecting means for detecting the position of a light spot on a surface to be exposed as a pixel unit, and N-fold exposure based on a detection result by the light spot position detecting means. It is preferable to include at least a pixel part selection unit that selects a pixel part to be used for the realization.
Hereinafter, an example of a method for designating a pixel part used for N-exposure by the used pixel part designation unit will be described.

(1) Method for designating used picture element part in single exposure head In the present embodiment (1), the exposure apparatus 10 performs double exposure on the photosensitive material 12, and each exposure head 30 A description will be given of a method for designating a used pixel portion for reducing the variation in resolution and density unevenness caused by the mounting angle error and realizing ideal double exposure.

The set inclination angle θ in the column direction of the image element (micromirror 58) with respect to the scanning direction of the exposure head 30 can be used as long as there is no mounting angle error of the exposure head 30 or the like. It is assumed that an angle slightly larger than the angle θ _ideal that is exactly double exposure using 256 lines of pixel parts is adopted.
This angle θ _ideal is equal to the number N of N double exposures, the number s of usable micromirrors 58 in the column direction, the interval p of usable micromirrors 58 in the column direction, and the microscopic exposure head 30 in a tilted state. For the pitch δ of the scanning line formed by the mirror,
spsinθ _ideal ≧ Nδ (Formula 1)
Given by. As described above, the DMD 36 according to the present embodiment includes a large number of micromirrors 58 having equal vertical and horizontal arrangement intervals arranged in a rectangular lattice shape.
pcosθ _ideal = δ (Formula 2)
And the above equation 1 is
stanθ _ideal = N (Formula 3)
It becomes. In the present embodiment (1), since s = 256 and N = 2 as described above, the angle θ _ideal is about 0.45 degrees according to Equation 3. Therefore, for example, an angle of about 0.50 degrees may be employed as the set inclination angle θ. It is assumed that the exposure apparatus 10 is initially adjusted so that the mounting angle of each exposure head 30, that is, each DMD 36 is close to the set inclination angle θ within an adjustable range.

  FIG. 10 is an explanatory diagram showing an example of unevenness in the pattern on the exposed surface due to the influence of the mounting angle error of one exposure head 30 and the pattern distortion in the exposure apparatus 10 initially adjusted as described above. It is. In the following drawings and description, the light spot in the m-th row is represented by r (m) with respect to the light spot generated by each pixel part (micromirror) and constituting the exposure area on the exposed surface. ), The light spot in the nth column is denoted as c (n), and the light spot in the mth row and the nth column is denoted as P (m, n).

The upper part of FIG. 10 shows a pattern of light spot groups from the usable micromirrors 58 projected onto the exposed surface of the photosensitive material 12 with the stage 14 being stationary, and the lower part is the upper part. 2 shows the state of the exposure pattern formed on the surface to be exposed when the stage 14 is moved and continuous exposure is performed in the state where the pattern of light spots as shown in FIG.
In FIG. 10, for convenience of explanation, the exposure pattern of the odd-numbered columns of the usable micromirrors 58 and the exposure pattern of the even-numbered columns are shown separately. However, the actual exposure patterns on the exposed surface are shown in FIG. Two exposure patterns are superimposed.

In the example of FIG. 10, as a result of adopting the set inclination angle θ slightly larger than the angle θ _ideal , and because it is difficult to finely adjust the mounting angle of the exposure head 30, the actual mounting angle and the above As a result of the error in the set inclination angle θ, density unevenness occurs in any region on the exposed surface. Specifically, in both the exposure pattern by the odd-numbered micromirrors and the exposure pattern by the even-numbered micromirrors, it is ideal in the overlapped exposure region on the exposed surface formed by a plurality of pixel part rows. Overexposure occurs with respect to double exposure, resulting in a redundant drawing area and uneven density.

Furthermore, the example of FIG. 10 is an example of pattern distortion appearing on the surface to be exposed, and “angular distortion” occurs in which the inclination angle of each pixel row projected on the surface to be exposed is not uniform. Causes of such angular distortion include various aberrations and alignment deviations of the optical system between the DMD 36 and the exposed surface, distortion of the DMD 36 itself, micromirror placement errors, and the like.
The angular distortion appearing in the example of FIG. 10 is a distortion in which the tilt angle with respect to the scanning direction is smaller in the left column of the figure and larger in the right column of the figure. As a result of this angular distortion, the overexposed area is smaller on the exposed surface shown on the left side of the figure and larger on the exposed surface shown on the right side of the figure.

In order to reduce the density unevenness in the overlapped exposure region on the exposed surface formed by a plurality of pixel part rows as described above, a set of the slit 28 and the photodetector is used as the light spot position detecting means. The actual inclination angle θ ′ is specified for each exposure head 30, and based on the actual inclination angle θ ′, the arithmetic unit connected to the photodetector as the pixel portion selection unit is used for actual exposure. A process of selecting a micromirror to be used is performed.
The actual inclination angle θ ′ is based on at least two light spot positions detected by the light spot position detection means, and the light spot column direction on the surface to be exposed and the scanning direction of the exposure head when the exposure head is tilted. It is specified by the angle formed by.
Hereinafter, the specification of the actual inclination angle θ ′ and the used pixel selection process will be described with reference to FIGS.

-Specification of actual inclination angle θ'-
FIG. 11 is a top view showing the positional relationship between the exposure area 32 by one DMD 36 and the corresponding slit 28. The size of the slit 28 is set to sufficiently cover the width of the exposure area 32.
In the example of the present embodiment (1), the angle formed by the 512th light spot row positioned substantially at the center of the exposure area 32 and the scanning direction of the exposure head 30 is measured as the actual inclination angle θ ′. . Specifically, the micromirror 58 in the first row and the 512th column and the micromirror 58 in the 256th row and the 512th column on the DMD 36 are turned on, and the light spots on the exposure surface corresponding to each of the micromirrors 58 are turned on. The positions of P (1,512) and P (256,512) are detected, and the angle formed by the straight line connecting them and the scanning direction of the exposure head is specified as the actual inclination angle θ ′.

FIG. 12 is a top view illustrating a method for detecting the position of the light spot P (256, 512).
First, in a state where the micromirror 58 in the 256th row and the 512th column is turned on, the stage 14 is slowly moved to relatively move the slit 28 along the Y-axis direction, and the light spot P (256, 512) is changed. The slit 28 is positioned at an arbitrary position so as to be between the upstream slit 28a and the downstream slit 28b. At this time, the coordinates of the intersection of the slit 28a and the slit 28b are (X0, Y0). The value of this coordinate (X0, Y0) is determined and recorded from the movement distance of the stage 14 to the position indicated by the drive signal given to the stage 14 and the known X-direction position of the slit 28. .

  Next, the stage 14 is moved, and the slit 28 is relatively moved to the right in FIG. 12 along the Y axis. Then, as indicated by a two-dot chain line in FIG. 12, the stage 14 is stopped when the light at the light spot P (256, 512) passes through the left slit 28b and is detected by the photodetector. The coordinates (X0, Y1) of the intersection of the slit 28a and the slit 28b at this time are recorded as the position of the light spot P (256, 512).

  Next, the stage 14 is moved in the opposite direction, and the slit 28 is relatively moved to the left in FIG. 12 along the Y axis. Then, as indicated by a two-dot chain line in FIG. 12, the stage 14 is stopped when the light at the light spot P (256, 512) passes through the right slit 28a and is detected by the photodetector. The coordinates (X0, Y2) of the intersection of the slit 28a and the slit 28b at this time are recorded as the position of the light spot P (256, 512).

  From the above measurement results, the coordinates (X, Y) indicating the position of the light spot P (256, 512) on the surface to be exposed are X = X0 + (Y1-Y2) / 2, Y = (Y1 + Y2) / 2. Determine by calculation. By the same measurement, coordinates indicating the position of P (1,512) are also determined, an inclination angle formed by a straight line connecting the respective coordinates and the scanning direction of the exposure head 30 is derived, and this is obtained as an actual inclination angle θ ′. As specified.

-Selection of used pixel part-
Using the actual inclination angle θ ′ thus specified, the arithmetic unit connected to the photodetector is expressed by the following equation 4
ttanθ ′ = N (Formula 4)
The natural number T closest to the value t satisfying the above relationship is derived, and the first to T-th row micromirrors on the DMD 36 are selected as micromirrors that are actually used during the main exposure. In this way, in the exposure region near the 512th column, a micromirror that minimizes the total area of the overexposed region and the underexposed region with respect to the ideal double exposure is actually obtained. It can be selected as a micromirror to be used for.

Here, instead of deriving the natural number closest to the above value t, the minimum natural number greater than or equal to the value t may be derived. In that case, in the exposure region near the 512th column, a micromirror that minimizes the area of the overexposed region and does not produce an underexposed region with respect to ideal double exposure. It can be selected as a micromirror to be actually used.
It is also possible to derive the maximum natural number equal to or less than the value t. In that case, in the exposure region near the 512th column, a micromirror that minimizes the area of the underexposed region and does not produce an overexposed region with respect to ideal double exposure. It can be selected as a micromirror to be actually used.

FIG. 13 shows how the unevenness on the exposed surface shown in FIG. 10 is improved in the exposure performed using only the light spot generated by the micromirror selected as the micromirror to be actually used as described above. It is explanatory drawing which showed what was done.
In this example, it is assumed that T = 253 is derived as the natural number T and the micromirrors in the first row to the 253rd row are selected. For the micromirrors in the 254th to 256th rows that are not selected, the pixel part control means sends a signal to set the angle of the always-off state, and these micromirrors are substantially Not involved in exposure. As shown in FIG. 13, in the exposure region near the 512th column, overexposure and underexposure are almost completely eliminated, and uniform exposure very close to ideal double exposure is realized.

On the other hand, in the left region of FIG. 13 (near c (1) in the figure), the inclination angle of the light spot sequence on the exposed surface is near the center (near c (512) in the figure) due to the angular distortion. This is smaller than the inclination angle of the light beam row in the region. Therefore, in the exposure using only the micromirror selected based on the actual inclination angle θ ′ measured with c (512) as a reference, the ideal double pattern is used for each of the even-numbered exposure pattern and the odd-numbered exposure pattern. An area that is underexposed with respect to the exposure is slightly generated.
However, in the actual exposure pattern formed by overlaying the exposure pattern of the odd-numbered columns and the exposure pattern of the even-numbered columns shown in the figure, the regions where the exposure amount is insufficient are complemented with each other, and the exposure unevenness due to the angular distortion is double-exposed. The effect of offsetting can be minimized.

Further, in the region on the right side of FIG. 13 (near c (1024) in the figure), the inclination angle of the light beam on the exposed surface is near the center (near c (512) in the figure) due to the angular distortion. It is larger than the inclination angle of the light beam row in the region. Therefore, in the exposure with the micromirror selected based on the actual inclination angle θ ′ measured with c (512) as a reference, as shown in the figure, there is an overexposed region with respect to the ideal double exposure. It will occur slightly.
However, in the actual exposure pattern formed by superimposing the exposure pattern of the odd-numbered columns and the exposure pattern of the even-numbered columns shown in the figure, the overexposed regions are complemented with each other, and the density unevenness due to the angular distortion is caused by the double exposure. The effect of offsetting can be minimized.

In the present embodiment (1), as described above, the actual inclination angle θ ′ of the 512th ray array is measured, and based on the T derived from the equation (4) using the actual inclination angle θ ′. The micro-mirror 58 to be used is selected. However, as a method of specifying the actual inclination angle θ ′, a plurality of actual directions formed by the column direction (light spot column) of the plurality of image elements and the scanning direction of the exposure head are used. Each of the tilt angles is measured, and any one of the average value, median value, maximum value, and minimum value is specified as an actual tilt angle θ ′. It is good also as a form to select.
When the average value or the median value is set to the actual inclination angle θ ′, it is possible to realize exposure with a good balance between an overexposed area and an underexposed area with respect to an ideal N-fold exposure. For example, the total area of the overexposed region and the underexposed region is minimized, and the number of pixel units (number of light spots) in the overexposed region and the underexposed region are drawn. It is possible to realize exposure such that the number of prime units (number of light spots) is equal.
Further, if the maximum value is set to the actual inclination angle θ ′, it is possible to realize an exposure that places more importance on eliminating an overexposed region with respect to an ideal N double exposure, for example, an underexposure. It is possible to realize exposure that minimizes the area of the region and does not generate an overexposed region.
Further, if the minimum value is set to the actual inclination angle θ ′, it is possible to realize exposure that places more importance on eliminating underexposed areas with respect to ideal N-fold exposure, for example, overexposure. It is possible to realize exposure that minimizes the area of the region and does not cause a region that is underexposed.

On the other hand, the specification of the actual inclination angle θ ′ is not limited to the method based on the positions of at least two light spots in the same pixel part row (light spot row). For example, the angle obtained from the position of one or more light spots in the same pixel part sequence c (n) and the position of one or more light spots in the row near the c (n), The actual inclination angle θ ′ may be specified.
Specifically, one light spot position in c (n) and one or a plurality of light spot positions included in a light spot row on a straight line and in the vicinity along the scanning direction of the exposure head are detected. The actual inclination angle θ ′ can be obtained from the position information. Further, the angle obtained based on the positions of at least two light spots (for example, two light spots arranged so as to straddle c (n)) in the light spot array in the vicinity of the c (n) line is an actual inclination. The angle θ ′ may be specified.

  As described above, according to the specification method of the used pixel portion of the present embodiment (1) using the exposure apparatus 10, resolution variation and density unevenness due to the influence of the mounting angle error of each exposure head and pattern distortion are reduced. In addition, ideal N double exposure can be realized.

(2) Method for designating used pixel parts between a plurality of exposure heads <1>
In the present embodiment (2), the exposure apparatus 10 performs double exposure on the photosensitive material 12, and is an overlapping exposure area on the exposed surface formed by the plurality of exposure heads 30. In the connection region, the variation in resolution and density unevenness due to the deviation from the ideal state of the relative position of the two exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) in the X-axis direction are reduced, and the ideal A description will be given of a method for designating a used pixel portion for realizing a typical double exposure.

As the set inclination angle θ of each exposure head 30, that is, each DMD 36, the usable pixel portion micromirror 58 of 1024 columns × 256 rows is used if there is no ideal mounting angle error of the exposure head 30. Then, it is assumed that an angle θ _ideal that is exactly double exposure is adopted.
This angle θ _ideal is obtained from the above equations 1 to 3 in the same manner as in the above embodiment (1). In the present embodiment (2), it is assumed that the exposure apparatus 10 is initially adjusted so that the mounting angle of each exposure head 30, that is, each DMD 36, becomes this angle θ _ideal .

FIG. 14 shows the influence of deviation of the relative positions of the two exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) in the X-axis direction from the ideal state in the exposure apparatus 10 initially adjusted as described above. FIG. 6 is an explanatory diagram showing an example of density unevenness generated in a pattern on the exposed surface. The displacement of the relative position of each exposure head in the X-axis direction can occur because it is difficult to finely adjust the relative position between the exposure heads.

14 is projected onto the exposed surface of the photosensitive material 12 in a state where the stage 14 is stationary, the light spot group from the usable micromirror 58 of the DMD 36 of the exposure heads 30 ₁₂ and 30 _21. It is the figure which showed these patterns. The lower part of FIG. 14 shows the exposure pattern formed on the exposed surface when the stage 14 is moved and the continuous exposure is performed with the light spot group pattern as shown in the upper part appearing. The state is shown for exposure areas 32 ₁₂ and 32 ₂₁ .
In FIG. 14, for convenience of explanation, every other exposure pattern of the micromirrors 58 that can be used is divided into an exposure pattern based on the pixel column group A and an exposure pattern based on the pixel column group B. The actual exposure pattern on the exposed surface is a superposition of these two exposure patterns.

In the example of FIG. 14, the exposure pattern by the pixel column group A and the pixel column group B as a result of the deviation of the relative position between the exposure heads 30 ₁₂ and 30 ₂₁ in the X-axis direction from the ideal state. In both of the above exposure patterns, a portion where the exposure amount is larger than the ideal double exposure state occurs in the connection area between the heads in the exposure areas 32 ₁₂ and 32 ₂₁ .

In order to reduce density unevenness appearing in the inter-head connecting region formed on the exposed surface by the plurality of exposure heads as described above, in this embodiment (2), a slit is used as the light spot position detecting means. 28 and a set of photodetectors, the positions of some of the light spots constituting the connecting area between the heads formed on the exposed surface among the light spot groups from the exposure heads 30 ₁₂ and 30 _21. Detect (coordinates). Based on the position (coordinates), processing for selecting a micromirror to be used for actual exposure is performed using an arithmetic unit connected to the photodetector as the pixel portion selection means.

-Detection of position (coordinates)-
FIG. 15 is a top view showing the positional relationship between the exposure areas 32 ₁₂ and 32 ₂₁ similar to those in FIG. 14 and the corresponding slits 28. The size of the slit 28 is large enough to cover the width of the overlapping portion between the exposed areas 34 by the exposure heads 30 ₁₂ and 30 ₂₁ , that is, the slit 28 is formed on the exposed surface by the exposure heads 30 ₁₂ and 30 _21. The size is sufficient to cover the connection area between the heads.

Figure 16 is a top view for explaining a detection method of detecting the position of a point P of the exposure area _{32 21} as an example (256, 1024).
First, with the micromirror in the 256th row and the 1024th column turned on, the stage 14 is slowly moved to relatively move the slit 28 along the Y-axis direction, and the light spot P (256, 1024) is upstream. The slit 28 is positioned at an arbitrary position so as to be between the slit 28a on the side and the slit 28b on the downstream side. At this time, the coordinates of the intersection of the slit 28a and the slit 28b are (X0, Y0). The value of this coordinate (X0, Y0) is determined and recorded from the movement distance of the stage 14 to the position indicated by the drive signal given to the stage 14 and the known X-direction position of the slit 28. .

  Next, the stage 14 is moved, and the slit 28 is relatively moved to the right in FIG. 16 along the Y axis. Then, as indicated by the two-dot chain line in FIG. 16, the stage 14 is stopped when the light at the light spot P (256, 1024) passes through the left slit 28b and is detected by the photodetector. The coordinates (X0, Y1) of the intersection of the slit 28a and the slit 28b at this time are recorded as the position of the light spot P (256, 1024).

  Next, the stage 14 is moved in the opposite direction, and the slit 28 is relatively moved to the left in FIG. 16 along the Y axis. Then, as indicated by a two-dot chain line in FIG. 16, the stage 14 is stopped when the light at the light spot P (256, 1024) passes through the right slit 28a and is detected by the photodetector. The coordinates (X0, Y2) of the intersection of the slit 28a and the slit 28b at this time are recorded as the light spot P (256, 1024).

  From the above measurement results, the coordinates (X, Y) indicating the position of the light spot P (256, 1024) on the exposed surface are calculated as X = X0 + (Y1−Y2) / 2, Y = (Y1 + Y2) / 2. Determined by

-Identification of unused pixel parts-
In the example of FIG. 14, first, the position of the point P of the exposure area _{32 12} (256,1) is detected by a set of slits 28 and a photodetector as the light spot position detecting unit. Subsequently, the position of each light spot on the 256 line of light spots row r of the exposure area _{32 21 (256), P (} 256,1024), to detect the P (256,1023) ··· and order periodically, where the exposure area _{32 21} of point P indicating the exposure area _{32 12} point P (256,1) larger X coordinate than the (256, n) is detected, and terminates the detecting operation. Then, to identify the micro mirrors corresponding to light spots constituting the c (1024) from the point light spot column c of the exposure area 32 ₂₁ (n + 1), as a micro-mirror is not used during the exposure (unused pixel parts) .
For example, in FIG. 14, the exposure area _{32 21} point P (256,1020) is shows a larger X coordinate than the point P of the exposure area _{32 12} (256,1) of the exposure area _{32 21} spot If P (256,1020) is that the detection operation at the detected ended, the light spots constituting the first 1024 lines from the 1021 line of exposure area _{32 21,} corresponding to the portion 70 covered with hatched in FIG. 17 The corresponding micromirror is identified as a micromirror that is not used during the main exposure.

Next, the number N of the N multiple exposure, the position of the point P of the exposure area _{32 12} (256, N) is detected. In this embodiment (2), since N = 2, the position of the light spot P (256, 2) is detected.
Then, among the light spot columns of the exposure area 32 _21, except those identified as light spots string corresponding to the micromirrors is not used during the exposure in the above, the position of the light spot constituting the rightmost 1020 column a, P (1,1020) in order from P (1,1020), P (2,1020 ) ··· and continue to detection, greater than the point P of the exposure area _{32 12} (256,2) X When the light spot P (m, 1020) indicating the coordinates is detected, the detection operation is terminated.
Thereafter, the connected operational devices to said light detector, and X-coordinate of the exposure area _{32 12} of the light spot P (256, two), point P of the exposure area _{32 21} (m, 1020) and P (m- and X-coordinate of 1,1020) are compared, if the direction of the X coordinate of the point P of the exposure area _{32 21} (m, 1020) is closer to the X coordinate of the point P in the exposure area _{32 12} (256, 2) a micro mirror corresponding to P (m-1,1020) from point P of the exposure area _{32 21} (1,1020) is identified as a micro-mirror is not used during the exposure.
Also, if the direction of the X coordinate of the point P of the exposure area _{32 21} (m-1,1020) is close to the X-coordinate of the point P in the exposure area _{32 12} (256, 2), the light of the exposure area _{32 21} Micromirrors corresponding to points P (1, 1020) to P (m−2, 1020) are specified as micromirrors that are not used for the main exposure.
Furthermore, the position of the point P of the exposure area _{32 12 (256, N-1} ) That point P (256,1), the position of each point constituting the first 1019 column is the next row of the exposure area _{32 21} The same detection process and identification of micromirrors that are not used are also performed.

  As a result, for example, micromirrors corresponding to the light spots that form the shaded area 72 in FIG. 17 are added as micromirrors that are not used during actual exposure. These micromirrors are always signaled to set the micromirror angle to the off-state angle, and these micromirrors are substantially not used for exposure.

As described above, the micromirrors that are not used at the time of actual exposure are identified, and the micromirrors that are not used at the time of actual exposure are selected as the micromirrors that are used at the time of actual exposure, whereby the exposure areas 32 ₁₂ and 32 ₂₁ In the connecting area between the heads, the total area of the overexposed area and the underexposed area with respect to the ideal double exposure can be minimized. As shown in the lower part of FIG. Uniform exposure extremely close to double exposure can be realized.

In the above example, upon the particular light spots constituting the regions 72 covered with hatched in FIG. 17, the X coordinate of the point P in the exposure area _{32 12} (256, 2), the exposure area _{32 21} of the light spot P (m, 1020) and P (m-1,1020) without comparison of the X-coordinate of the immediately, P from point P of the exposure area _{32 21 (1,1020) (m-} 2 , 1020) may be specified as a micromirror that is not used during the main exposure. In that case, in the connecting area between the heads, a micromirror is actually used that minimizes the area of an overexposed area with respect to an ideal double exposure and does not cause an underexposed area. It can be selected as a micromirror.
Further, the micro-mirrors corresponding to P (m-1,1020) from point P of the exposure area _{32 21} (1,1020), it may be specified as micro mirrors not used in this exposure. In that case, in the connecting region between the heads, a micromirror is actually used in which the area of the region that is underexposed with respect to the ideal double exposure is minimized and the region that is not overexposed does not occur. It can be selected as a micromirror.
Further, in the connecting area between the heads, the number of pixel units (the number of light spots) in an area that is overexposed with respect to an ideal double drawing and the number of pixel units (the number of light spots) in an area that is underexposed. It is good also as selecting the micromirror actually used so that it may become equal.

  As described above, according to the method for designating the used pixel portion of the present embodiment (2) using the exposure apparatus 10, the resolution variation and the density due to the relative position shift in the X-axis direction of the plurality of exposure heads. Unevenness can be reduced and ideal N-fold exposure can be realized.

(3) Specification method of used pixel parts between a plurality of exposure heads <2>
In the present embodiment (3), the exposure apparatus 10 performs double exposure on the photosensitive material 12 and is an overlapped exposure area on the exposed surface formed by a plurality of exposure heads 30. In the joint region, the relative position of the two exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) from the ideal state in the X-axis direction, the mounting angle error of each exposure head, and the distance between the two exposure heads A description will be given of a method for designating a used pixel part for reducing the variation in resolution and density unevenness due to the relative mounting angle error of the lens and realizing ideal double exposure.

As the set tilt angle of each exposure head 30, that is, each DMD 36, in an ideal state where there is no mounting angle error of the exposure head 30, a usable 1024 column × 256 row pixel element (micromirror 58) is provided. It is assumed that an angle slightly larger than the angle θ _ideal that is used for exactly double exposure is adopted.
This angle θ _ideal is a value obtained in the same manner as the above embodiment (1) using the above equations 1 to 3, and in this embodiment, s = 256 and N = 2 as described above. The angle θ _ideal is about 0.45 degrees. Therefore, for example, an angle of about 0.50 degrees may be employed as the set inclination angle θ. It is assumed that the exposure apparatus 10 is initially adjusted so that the mounting angle of each exposure head 30, that is, each DMD 36 is close to the set inclination angle θ within an adjustable range.

FIG. 18 shows the mounting angle errors of two exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) in the exposure apparatus 10 in which the mounting angles of the exposure heads 30, that is, the DMDs 36 are initially adjusted as described above. FIG. 10 is an explanatory diagram showing an example of unevenness that occurs in a pattern on an exposed surface due to the influence of the relative mounting angle error between the exposure heads 30 ₁₂ and 30 ₂₁ and the displacement of the relative position.

In the example of FIG. 18, as in the example of FIG. 14, as a result of the shift of the relative positions of the exposure heads 30 ₁₂ and 30 _{21 in} the X-axis direction, exposure by every other light spot group (pixel column groups A and B) is performed. In both exposure patterns 32 ₁₂ and 32 ₂₁ , the exposure amount overlaps on the coordinate axis perpendicular to the scanning direction of the exposure head on the exposed surface of the exposure areas 32 ₁₂ and 32 ₂₁ , which is more than the ideal double exposure state. A region 74 is generated, which causes uneven density.
Furthermore, in the example of FIG. 18, it is difficult to finely adjust the result of setting the tilt angle θ of each exposure head to be slightly larger than the angle θ _ideal satisfying the formula (1) and the mounting angle of each exposure head. Therefore, as a result of the actual mounting angle deviating from the set inclination angle θ, even in regions other than the exposure region overlapping on the coordinate axis perpendicular to the scanning direction of the exposure head on the exposed surface, In the connection region between the pixel part columns, which is an overlapped exposure region on the exposed surface, formed by a plurality of pixel part columns, both in the exposure pattern by every other light spot group (pixel column group A and B). A region 76 that is overexposed than the ideal double exposure state is generated, and this causes further density unevenness.

In this embodiment (3), first, the use pixel selection process for reducing the uneven density due to the influence of the deviation of the mounting angle error and relative mounting angle of the exposure heads 30 ₁₂ and 30 _21.
Specifically, a set of a slit 28 and a photodetector is used as the light spot position detecting means, and an actual inclination angle θ ′ is specified for each of the exposure heads 30 ₁₂ and 30 ₂₁ , and the actual inclination angle θ ′ is set. Based on this, it is assumed that processing for selecting a micromirror to be used for actual exposure is performed using an arithmetic unit connected to a photodetector as the pixel part selection means.

-Specification of actual inclination angle θ'-
The actual inclination angle θ ′ is specified with respect to the positions of the light spots P (1, 1) and P (256, 1) in the exposure area 32 ₁₂ for the exposure head 30 _{12 and in the} exposure area 32 ₂₁ for the exposure head 30 ₂₁ . The positions of the light spots P (1,1024) and P (256,1024) are detected by the combination of the slit 28 and the photodetector used in the above-described embodiment (2), and the inclination angle of the straight line connecting them. And the angle formed by the scanning direction of the exposure head.

-Identification of unused pixel parts-
The arithmetic device connected to the photodetector using the actual inclination angle θ ′ thus specified is similar to the following equation 4 similar to the arithmetic device in the embodiment (1) described above.
ttanθ ′ = N (Formula 4)
The natural number T closest to the value t satisfying the above relationship is derived for each of the exposure heads 30 ₁₂ and 30 ₂₁ , and the micromirrors in the (T + 1) th to 256th rows on the DMD 36 are not used for the main exposure. Processing to identify as a micromirror is performed.
For example, T = 254 for the exposure head _{30 12,} when T = 255 was derived for the exposure head _3O21, micro mirrors corresponding to light spots constituting the parts 78 and 80 covered with hatched in FIG. 19 These are specified as micromirrors that are not used for the main exposure. As a result, in each of the exposure areas 32 ₁₂ and 32 ₂₁ other than the head-to-head connection area, the total area of the overexposed area and the underexposed area with respect to the ideal double exposure is minimized. be able to.

Here, instead of deriving the natural number closest to the above value t, the minimum natural number greater than or equal to the value t may be derived. In this case, exposure is performed for ideal double exposure in each of the exposure areas 32 ₁₂ and 32 ₂₁ other than the head-to-head connection area, which is an overlapping exposure area on the exposed surface formed by a plurality of exposure heads. It is possible to minimize the area where the amount is excessive and to prevent an area where the exposure amount is insufficient.
Or it is good also as deriving the maximum natural number below value t. In this case, exposure is performed for ideal double exposure in each of the exposure areas 32 ₁₂ and 32 ₂₁ other than the head-to-head connection area, which is an overlapping exposure area on the exposed surface formed by a plurality of exposure heads. It is possible to minimize the area of the insufficient region and prevent the region from being overexposed.
In each area other than the head-to-head connection area, which is an overlapping exposure area on the exposed surface formed by a plurality of exposure heads, the number of pixel units (light It is also possible to identify micromirrors that are not used during the main exposure so that the number of pixel units (the number of light points) in the underexposed region is equal to the number of points.

Thereafter, with respect to the micromirrors corresponding to the light spots other than the light spots constituting the regions 78 and 80 covered with diagonal lines in FIG. 19, the same processing as that of the present embodiment (3) described with reference to FIGS. In FIG. 19, the micromirrors corresponding to the light spots constituting the shaded area 82 and the shaded area 84 are identified and added as micromirrors that are not used during the main exposure.
With respect to the micromirrors that are specified not to be used at the time of exposure, a signal for setting the angle of the always-off state is sent by the pixel element control means, and these micromirrors are substantially exposed. Not involved.

  As described above, according to the method for designating the used picture element portion of the present embodiment (3) using the exposure apparatus 10, the relative position shifts in the X-axis direction of the plurality of exposure heads and the mounting angles of the exposure heads Variations in resolution and density unevenness due to errors and relative mounting angle errors between exposure heads can be reduced, and ideal N-fold exposure can be realized.

  Although the above-described method for specifying the used pixel portion by the exposure apparatus 10 has been described in detail, the above embodiments (1) to (3) are merely examples, and various modifications can be made without departing from the scope of the present invention. is there.

  In the above embodiments (1) to (3), as a means for detecting the position of the light spot on the exposed surface, a set of the slit 28 and the single cell type photodetector is used. The present invention is not limited to this, and any form may be used. For example, a two-dimensional detector may be used.

  Further, in the above embodiments (1) to (3), the actual inclination angle θ ′ is obtained from the position detection result of the light spot on the exposed surface by the combination of the slit 28 and the photodetector, and the actual inclination angle θ ′ is obtained. The micromirrors to be used are selected based on the above, but a usable micromirror may be selected without the derivation of the actual inclination angle θ ′. Furthermore, for example, the reference exposure using all available micromirrors is performed, and the micromirror used by the operator is manually specified by checking the resolution and density unevenness by visual observation of the reference exposure results. It is included in the scope of the invention.

In addition to the angular distortion described in the above example, there are various forms of pattern distortion that can occur on the exposed surface.
As an example, as shown in FIG. 20A, there is a form of magnification distortion in which light rays from each micromirror 58 on the DMD 36 reach the exposure area 32 on the exposure surface at different magnifications.
As another example, as shown in FIG. 20B, there is a form of beam diameter distortion in which the light from each micromirror 58 on the DMD 36 reaches the exposure area 32 on the exposed surface with a different beam diameter. . These magnification distortion and beam diameter distortion are mainly caused by various aberrations and alignment deviation of the optical system between the DMD 36 and the exposed surface.
As yet another example, there is a form of light amount distortion in which light beams from the micromirrors 58 on the DMD 36 reach the exposure area 32 on the exposed surface with different light amounts. In addition to various aberrations and misalignment, this light amount distortion includes the positional dependency of the transmittance of the optical element between the DMD 36 and the exposed surface (for example, the lenses 52 and 54 in FIG. Caused by unevenness. These forms of pattern distortion also cause unevenness in resolution and density in the pattern formed on the exposed surface.

  According to the above embodiments (1) to (3), the residual elements of pattern distortion in these forms after selecting the micromirrors actually used for the main exposure are the same as the residual elements of angular distortion described above. It is possible to level out by the effect of filling by multiple exposure, and the unevenness of resolution and density can be reduced over the entire exposure area of each exposure head.

<< Reference exposure >>
As a modified example of the above embodiments (1) to (3), among available micromirrors, it corresponds to (N-1) every micromirror column or 1 / N rows of all light spot rows. A reference exposure is performed using only a group of micromirrors constituting an adjacent row, and among the micromirrors used for the reference exposure, micromirrors that are not used at the time of actual exposure are specified so that uniform exposure can be realized. It is good as well.
The result of the reference exposure by the reference exposure means is output as a sample, and the output reference exposure result is analyzed to confirm resolution variation and density unevenness and to estimate the actual inclination angle. The analysis of the result of the reference exposure may be a visual analysis by an operator.

FIG. 21 is an explanatory diagram showing an example of a form in which reference exposure is performed using only (N-1) rows of micromirrors using a single exposure head.
In this example, it is assumed that double exposure is performed during the main exposure, and therefore N = 2. First, reference exposure is performed using only the micromirrors corresponding to the odd-numbered light spot arrays indicated by the solid lines in FIG. 21A, and the reference exposure results are output as samples. Based on the reference exposure result outputted from the sample, it is possible to specify a micromirror to be used in the main exposure by confirming variations in resolution and density unevenness, or estimating an actual inclination angle.
For example, micromirrors other than the micromirror corresponding to the light spot array shown by hatching in FIG. 21B are designated as actually used in the main exposure among the micromirrors constituting the odd light spot array. . For even-numbered light spot arrays, reference exposure may be performed separately in the same manner, and the micromirror used during the main exposure may be designated, or the same pattern as that for the odd-numbered light spot arrays may be applied. Good.
By specifying the micromirrors used in the main exposure as described above, in the main exposure using both the odd-numbered and even-numbered micromirrors, a state close to ideal double exposure can be realized.

FIG. 22 is an explanatory diagram showing an example of a form in which reference exposure is performed using only a plurality of (N-1) rows of micromirrors using a plurality of exposure heads.
In this example, it is assumed that double exposure is performed during the main exposure, and therefore N = 2. First, reference is made using only the micromirrors corresponding to the odd-numbered light spot rows of two exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) adjacent to each other in the X-axis direction, which are indicated by solid lines in FIG. Exposure is performed, and a reference exposure result is output as a sample. Based on the output reference exposure result, the variation in resolution and density unevenness in the area other than the joint area between the heads formed on the exposed surface by the two exposure heads are confirmed, or the actual inclination angle is estimated. Thus, the micromirror to be used at the time of the main exposure can be designated.
For example, the micromirrors other than the micromirrors corresponding to the light spot rows in the area 86 shown by hatching in FIG. 22 and the shaded area 88 are among the micromirrors constituting the odd-numbered light spots, during the main exposure. Specified as actually used. For even-numbered light spot arrays, reference exposure may be performed separately in the same manner, and a micromirror used in the main exposure may be designated, or the same pattern as that for the odd-numbered pixel columns may be applied. Good.
In this way, in the main exposure using both the odd-numbered and even-numbered micromirrors by designating the micromirrors that are actually used during the main exposure, the two exposure heads form the surface to be exposed. A state close to ideal double exposure can be realized in a region other than the head-to-head connection region.

FIG. 23 is an explanatory diagram showing an example of a form in which reference exposure is performed using a single exposure head and using only micromirror groups constituting adjacent rows corresponding to 1 / N rows of the total light spot rows. It is.
In this example, it is assumed that double exposure is performed during the main exposure, and therefore N = 2. First, reference exposure is performed using only micromirrors corresponding to the light spots in the first to 128 (= 256/2) rows indicated by the solid line in FIG. 23A, and the reference exposure results are output as samples. Based on the reference exposure result outputted from the sample, a micromirror to be used in the main exposure can be designated.
For example, a micromirror other than the micromirror corresponding to the light spot group indicated by hatching in FIG. 23B is designated as actually used in the main exposure among the micromirrors in the first to 128th rows. Can be done. For the micromirrors in the 129th to 256th rows, reference exposure may be separately performed in the same manner, and the micromirrors used in the main exposure may be designated, or the micromirrors in the first to 128th rows may be designated. The same pattern as that for the mirror may be applied.
By designating the micromirror to be used at the time of the main exposure in this way, a state close to an ideal double exposure can be realized in the main exposure using the entire micromirror.

FIG. 24 uses a plurality of exposure heads, and two adjacent exposure heads (for example, exposure heads 30 ₁₂ and 30 ₂₁ ) adjacent to each other in the X-axis direction are adjacent to each other corresponding to 1 / N rows of the total number of light spots. It is explanatory drawing which showed an example of the form which performs reference exposure using only the micromirror group which comprises a line.
In this example, it is assumed that double exposure is performed during the main exposure, and therefore N = 2. First, reference exposure is performed using only the micromirrors corresponding to the light spots in the first to 128th (= 256/2) rows indicated by solid lines in FIG. 24, and the reference exposure results are output as samples. . Based on the reference exposure result outputted from the sample, it is possible to realize the main exposure in which the variation in resolution and the density unevenness in the region other than the joint region between the heads formed on the exposed surface by the two exposure heads are minimized. In addition, it is possible to designate a micromirror to be used during the main exposure.
For example, micromirrors other than the micromirrors corresponding to the light spot arrays in the region 90 shown by hatching in FIG. 24 and the region 92 shown by shading are included in the micromirrors in the first to 128th rows. Designated as actually used at the time of exposure. For the micromirrors in the 129th to 256th rows, reference exposure may be separately performed in the same manner, and the micromirrors used for the main exposure may be designated, or the micromirrors in the first to 128th rows may be designated. The same pattern as that for the mirror may be applied.
In this way, by specifying the micromirror to be used during the main exposure, a state close to ideal double exposure is realized in an area other than the inter-head connecting area formed on the exposed surface by two exposure heads. it can.

  In the above embodiments (1) to (3) and the modified examples, the case where the main exposure is the double exposure has been described. However, the present invention is not limited to this, and any multiple exposure more than the double exposure may be used. . In particular, by setting the exposure to about 3 to 7 exposures, high resolution can be secured, and exposure with reduced variations in resolution and density unevenness can be realized.

  Further, in the exposure apparatus according to the embodiment and the modified example, the dimension of the predetermined part of the two-dimensional pattern represented by the image data is matched with the dimension of the corresponding part that can be realized by the selected use pixel. A mechanism for converting image data is preferably provided. By converting the image data in this way, a high-definition pattern according to a desired two-dimensional pattern can be formed on the exposed surface.

[Development process]
The developing step includes a step of developing the photosensitive layer by exposing the photosensitive layer by the exposing step and removing an unexposed portion.
There is no restriction | limiting in particular as the removal method of the said unhardened area | region, According to the objective, it can select suitably, For example, the method etc. which remove using a developing solution are mentioned.

  There is no restriction | limiting in particular as said developing solution, Although it can select suitably according to the objective, For example, alkaline aqueous solution, an aqueous developing solution, an organic solvent etc. are mentioned, Among these, weakly alkaline aqueous solution is preferable. Examples of the basic component of the weak alkaline aqueous solution include lithium hydroxide, sodium hydroxide, potassium hydroxide, lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium phosphate, phosphorus Examples include potassium acid, sodium pyrophosphate, potassium pyrophosphate, and borax.

The pH of the weak alkaline aqueous solution is, for example, preferably about 8 to 12, and more preferably about 9 to 11. Examples of the weak alkaline aqueous solution include a 0.1 to 5% by mass sodium carbonate aqueous solution or a potassium carbonate aqueous solution, and a 0.01 to 0.2% by mass KOH aqueous solution.
The temperature of the developer can be appropriately selected according to the developability of the photosensitive layer, and is preferably about 25 ° C. to 40 ° C., for example.

  The developer includes a surfactant, an antifoaming agent, an organic base (for example, ethylenediamine, ethanolamine, tetramethylammonium hydroxide, diethylenetriamine, triethylenepentamine, morpholine, triethanolamine, etc.) and development. Therefore, it may be used in combination with an organic solvent (for example, alcohols, ketones, esters, ethers, amides, lactones, etc.). The developer may be an aqueous developer obtained by mixing water or an aqueous alkali solution and an organic solvent, or may be an organic solvent alone.

The development method is not particularly limited and may be appropriately selected depending on the intended purpose. Examples thereof include paddle development, shower development, shower & spin development, and dip development.
Here, the shower development will be described. The uncured portion can be removed by spraying a developer onto the exposed photosensitive layer by shower. Prior to development, it is preferable to spray an alkaline solution having a low solubility in the photosensitive layer by a shower or the like to remove the thermoplastic resin layer, the intermediate layer, and the like. Further, after the development, it is preferable to remove the development residue while spraying a cleaning agent or the like with a shower and rubbing with a brush or the like.

[Other processes]
There is no restriction | limiting in particular as said other process, Although selecting suitably from the process in well-known pattern formation is mentioned, For example, a hardening process process etc. are mentioned. These may be used alone or in combination of two or more.

-Curing process-
It is preferable to provide a curing treatment step for performing a curing treatment on the photosensitive layer after the development step.
There is no restriction | limiting in particular as said hardening process, Although it can select suitably according to the objective, For example, a whole surface exposure process, a whole surface heat processing, etc. are mentioned suitably.

Examples of the entire surface exposure processing method include a method of exposing the entire surface of the laminate on which the pattern is formed after the developing step. The entire surface exposure accelerates the curing of the resin in the photosensitive composition forming the photosensitive layer, and the surface of the pattern is cured.
There is no restriction | limiting in particular as an apparatus which performs the said whole surface exposure, Although it can select suitably according to the objective, For example, UV exposure machines, such as an ultrahigh pressure mercury lamp, are mentioned suitably.

Examples of the entire surface heat treatment method include a method of heating the entire surface of the laminate on which the pattern is formed after the developing step. The whole surface heating increases the film strength of the surface of the pattern.
As heating temperature in the said whole surface heating, 120-250 degreeC is preferable and 120-200 degreeC is more preferable. When the heating temperature is less than 120 ° C., the film strength may not be improved by heat treatment. When the heating temperature exceeds 250 ° C., the resin in the photosensitive composition is decomposed, and the film quality is weak and brittle. Sometimes.
As heating time in the said whole surface heating, 10 to 120 minutes are preferable and 15 to 60 minutes are more preferable.
There is no restriction | limiting in particular as an apparatus which performs the said whole surface heating, According to the objective, it can select suitably from well-known apparatuses, For example, a dry oven, a hot plate, IR heater etc. are mentioned.

  In the method for producing an in-cell structure of the present invention, a pattern can be formed with high definition and efficiency by suppressing distortion of an image formed on the exposed surface of the photosensitive layer. It can be suitably used for the production of cell internal structures such as columns that require exposure, liquid crystal alignment control protrusions, overlapping columns, and insulating films.

(In-cell structure)
The in-cell structure of the present invention is manufactured by the method for manufacturing the in-cell structure of the present invention.
The internal structure of the cell is not particularly limited and may be appropriately selected according to the purpose. At least one of a spacer (column), a liquid crystal alignment control protrusion, a stacked column, and an insulating film is preferable.

The spacer (column) is not particularly limited in shape, size, number, etc. as long as the thickness of the liquid crystal layer in the liquid crystal display device can be kept constant, and can be appropriately selected according to the purpose. it can.
The shape of the spacer, that is, the shape of the cross section when the spacer is cut in a plane parallel to the substrate is not particularly limited and can be appropriately selected according to the purpose. Polygon, cross, T-shape or L-shape is preferred. Also, in the case of forming the spacers by lamination, the shape of the spacers in each layer is not particularly limited, but is preferably a circle, an ellipse, a polygon with rounded corners, a cross, a T-shape or an L-shape, They may be laminated to form a spacer.

  For example, the size (height) of the spacer is preferably 1 to 9 μm, and more preferably 2 to 8 μm. If the height of the spacer is lower than 1 μm, it may be difficult to ensure a sufficient cell gap. If it exceeds 9 μm, the cell gap of the liquid crystal display device becomes too large and the voltage required for driving is high. It is not preferable.

  It is preferable to form spacers in the non-display area inside and outside the screen from the viewpoint of improving the uniformity in the screen between the two substrates for the liquid crystal display device held by the spacer. Alternatively, it may be formed in one of the non-display areas outside the screen.

The area and arrangement location of each spacer are greatly affected by the structure of the display device. Constraints of the area of the non-display region 1 in the pixel in a color filter having a fixed dot-like spacers, spacer area per one screen is preferably 10~1,000μm ^2, 10~250μm ² Gayori preferable. The spacer area here is the highest part of the spacer formed on the conductive layer, and is the area of the portion that contacts the counter substrate when the display device is manufactured or the portion that contacts the spacer manufactured on the counter substrate. It means area.

  The liquid crystal alignment control protrusions (sometimes referred to as protrusions, alignment control protrusions, etc.) that can regulate the orientation direction of liquid crystal molecules are preferable, and the inside of the conductive layer of the display device (the conductive layer and the liquid crystal). The shape and form are not particularly limited as long as they are formed between the layers. Examples of the shape include a pyramid shape (triangular pyramid, quadrangular pyramid, etc.) having a substrate surface (color filter surface) as a bottom surface, a hemispherical shape, a conical shape having a substrate surface (or color filter surface) as a bottom surface, A trapezoidal shape, a saddle type shape, or a strip-like shape formed on a substrate (on a color filter) in a strip shape and having a triangular cross section perpendicular to its length direction, and a cross sectional shape perpendicular to its length direction A columnar body such as a semicircle, a quadrangle, a trapezoid, or a bowl can be used.

  The arrangement mode of the liquid crystal alignment control protrusions can be appropriately selected from known modes. For example, it can be formed in the mode described in Japanese Patent No. 2947350. For example, a plurality of columnar bodies formed in a strip shape on a substrate and having a trapezoidal cross-sectional shape perpendicular to the length direction are arranged in a pattern extending in parallel in one direction at an equal pitch, and each conductive material of two substrates It may be an embodiment formed between both the layer and the substrate (see FIG. 14 of Japanese Patent No. 2947350). In the case where the liquid crystal alignment control protrusion is provided between the conductive layers of both substrates and the substrate, it is not always necessary to form a structure having the same shape, and a combination of structures having different shapes may be formed. Good. Further, the structure formed in a band shape on the substrate (or color filter) is not limited to a linear shape, and may be provided in a bent shape at a predetermined angle (Japanese Patent No. 2947350). (See FIGS. 42 and 55).

  In addition, for details on the size, arrangement interval, arrangement shape, and the like of the liquid crystal alignment control protrusions, the description in Japanese Patent No. 2947350 can be referred to.

  Among the shapes of the liquid crystal alignment control protrusions, a liquid crystal alignment control protrusion having a trapezoidal shape or a bowl shape in cross section perpendicular to the substrate is preferable in that a sufficient viewing angle can be obtained. (Or color filter surface) trapezoidal, trapezoidal, or columnar body that is formed on a substrate (color filter) in a strip shape and has a semicircular, trapezoidal, or trapezoidal cross-section. Is preferred.

  As described above, the liquid crystal alignment control protrusion is provided on the inner side of the conductive layer (between the conductive layer and the substrate) so as to protrude toward the liquid crystal layer, and thus along the convex surface of the liquid crystal alignment control protrusion. Since the orientation of the liquid crystal molecules is regulated so as to be inclined, a wide viewing angle independent of the position (viewing angle) at which the liquid crystal surface is observed can be secured.

  The overlapping column means a structure in which a spacer, a liquid crystal alignment control protrusion, and a colored layer of a color filter are overlapped. For example, the dot-shaped spacer can be composed of one, two, or three layers of colored layers. For example, when forming a desired colored layer pattern of the first color with the colored layer of the first color on the substrate on which the black matrix is formed, a spacer is formed by laminating the portion covering the opening of the black matrix and the colored layer. A colored layer is left in the part where the film is formed. Similar operations are repeated for the second color and the third color, and one colored layer is formed on the opening of the black matrix. In order to secure a sufficient cell gap as a spacer, it is preferable that two to three colored layers are laminated at the spacer formation position.

  It is preferable to form a spacer by laminating one layer, two layers, or three layers of a colored layer on a black matrix that is a non-display region, from the viewpoint of securing a sufficient cell gap without reducing the area of the display portion. . However, in the case where the height of the spacer may be the same height as the divided alignment protrusions, i.e., a black matrix thicker than the colored layer is disposed under the dot spacers, the dot spacers and the divided alignment protrusions Even if the spacers are formed simultaneously, the colored layer does not have to be placed at the spacer position, for example, when the height of the spacer is increased and the divisional alignment projection does not contact the counter electrode substrate. That is, at this time, the spacer is composed of one layer as in the case of the split alignment protrusion.

  The method for forming the stacked pillars is not particularly limited and can be appropriately selected depending on the purpose. For example, as shown in FIG. 35, a black matrix 502 is formed on a non-alkali glass 501 using a black paste. Form. A blue colored layer 503 is formed so as to fill the opening of the black matrix 502, and at the same time, the blue colored layer 504 is disposed on the black matrix at a spacer forming position. Similarly, a red colored layer is formed at the black matrix opening 507 and the spacer forming position 506. Next, a green coloring layer is formed at the opening 505 and the spacer forming position 508 of the black matrix. Next, a transparent protective layer 509 is formed, and a transparent conductive layer 510 is further laminated. Split alignment protrusions 511 and dot-shaped spacers 512 are simultaneously formed on the transparent conductive layer 510. As described above, a stacked pillar is formed.

(Display device)
In the display device of the present invention, a liquid crystal layer is sandwiched between two substrates each having a conductive layer provided on the surfaces facing each other, and the in-cell structure comprising the above-described photosensitive composition of the present invention. (For example, a protrusion for controlling liquid crystal alignment) is provided so as to protrude from the inner side of the conductive layer on the substrate (display region between the conductive layer and the substrate) toward the liquid crystal layer. Further, an alignment film can be formed on the conductive layer so as to cover them.

  The basic configuration of the display device of the present invention includes: (1) a driving side substrate in which driving elements such as thin film transistors (hereinafter referred to as “TFT”) and pixel electrodes (conductive layers) are arranged; A color filter side substrate provided with a filter and a counter electrode (conductive layer) with a spacer interposed therebetween, and a liquid crystal material enclosed in a gap portion; (2) the color filter is the drive side substrate And a color filter integrated drive substrate directly formed on the substrate and a counter substrate having a counter electrode (conductive layer) disposed opposite each other with a spacer interposed therebetween, and a liquid crystal material sealed in the gap portion, etc. Can be mentioned.

Examples of the conductive layer include an ITO film; a metal film such as Al, Zn, Cu, Fe, Ni, Cr, and Mo; a metal oxide film such as SiO _2. A membrane is particularly preferred.
The drive side substrate, the color filter side substrate, and the counter substrate are made of, for example, a known glass plate such as a soda glass plate, a low expansion glass plate, a non-alkali glass plate, a quartz glass plate, or a plastic film. Constructed using.

As a driving side substrate in which driving elements such as TFTs and pixel electrodes are arranged, for example, TFTs and TFTs connected to data bus lines and gate bus lines arranged in a matrix so as to cross each other vertically are arranged. For example, a conductive layer connected to the data bus line may be provided.
The liquid crystal display method to be applied is not particularly limited and is appropriately selected according to the purpose. For example, ECB (Electrically Controlled Birefringence), TN (Twisted Nematic), OCB (Optically Compensatory Bend), VA (Vertically Aligned), HAN (Hybrid Aligned Nematic), STN (Supper Twisted Nematic), IPS (In-Plane Switching), GH (Guest Host), FLC (ferroelectric liquid crystal), AFLC (antiferroelectric liquid crystal), and PDLC (Polymer dispersed liquid crystal).

  In any of the above embodiments, a conductive layer is formed on both of the substrates constituting the display device, a voltage is applied between the two conductive layers, and the liquid crystal material sandwiched therebetween changes the alignment state according to the voltage. Display. Accordingly, the structure described above can be formed in any desired shape and form inside any conductive layer (between the conductive layer and the substrate).

An example of the configuration mode (1) will be described with reference to FIG.
One substrate 210 is a color filter side substrate. On the surface of the substrate 203 facing the liquid crystal layer 206, there are a color filter layer 207, trapezoidal structures 208, 208... Formed at an equal pitch, and an ITO film (conductive layer) 201 forming a common electrode. Is formed. Furthermore, an alignment film (not shown) is provided on the uppermost surface of the substrate.
The other substrate 220 is a drive side substrate including TFTs. On the surface of the substrate 204 facing the liquid crystal layer 206, a TFT (not shown), a trapezoidal structure 208 (only one is shown in FIG. 46) formed at an equal pitch, and a drain electrode of the TFT An ITO film (conductive layer) 202 is formed to be bonded to the substrate. A plurality of gate bus lines (not shown) forming gate electrodes are formed on the substrate 220, and a plurality of data bus lines (not shown) are formed in parallel to be orthogonal to the gate bus lines. A plurality of TFTs are arranged corresponding to the intersections of the gate bus lines and the data bus lines. Further, an alignment film (not shown) is provided on the uppermost surface of the substrate.
A liquid crystal layer 206 in which a liquid crystal material is sealed is sandwiched between the substrate 210 and the substrate 220, and the structure 208 protrudes from the inside of the conductive layers 201 and 202 toward the liquid crystal layer 206, and the convex surface The liquid crystal molecules 205 are aligned along.

  As described above, since a transparent structure without coloration is provided inside the conductive layer of the substrate (between the conductive layer and the liquid crystal layer), a wide viewing angle independent of the observation position (viewing angle) with respect to the liquid crystal display surface can be obtained. In addition to ensuring the color purity of the three primary colors (B (blue), G (green), and R (red)), it is possible to display a clear full-color image with no hue shift and high-quality display. An apparatus can be provided.

FIG. 37 shows a display device according to still another example, which is the same as FIG. 36 except that no color filter is provided. That is, a liquid crystal layer 206 in which a liquid crystal material is sealed is sandwiched between the substrate 220 and the substrate 220, and the structure 208 protrudes from the inside of the conductive layers 202 and 202 to the liquid crystal layer 206 side, The liquid crystal molecules 205 are aligned along the convex surface.
Even with this configuration, a transparent structure without coloration is provided between the conductive layer and the liquid crystal layer of the substrate, so that a wide viewing angle independent of the observation position (viewing angle) with respect to the liquid crystal display surface is ensured. And a high-quality display device can be provided.

EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.
Unless otherwise specified, “parts”, “%” and “molecular weight” represent “parts by mass”, “mass%” and “weight average molecular weight”, respectively.

Example 1
[Formation of liquid crystal alignment control protrusions]
-Formation of positive photosensitive layer (coating method)-
First, a stripe-shaped black matrix having a predetermined size and shape and a frame-shaped light-shielding portion were formed on a glass substrate having a predetermined size by using the black matrix resin composition. Thereafter, a colored film made of R (red), G (green), and B (blue) was formed at a predetermined position by the method for manufacturing a color filter described in Example 1 of JP-A-2005-3861. Further, a transparent electrode film ITO was formed thereon by sputtering.
After the temperature of the substrate is adjusted to 23 ° C., a positive photosensitive composition having the following composition is used on a glass substrate coater (manufactured by FAS Japan, trade name: MH-1600) having a slit-like nozzle. The object was applied. Subsequently, after part of the solvent was dried by VCD (vacuum drying device, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 30 seconds to eliminate the fluidity of the coating layer, the substrate was surrounded by EBR (edge bead remover). The unnecessary coating solution was removed and pre-baked at 120 ° C. for 3 minutes to form a photosensitive layer having a thickness of 2 μm.

-Preparation of positive photosensitive layer coating solution (T1)-
Positive resist solution (FH2405, cresol novolak resin, naphthoquinone diazide ester, propylene glycol monomethyl ether acetate-containing, manufactured by FUJIFILM Electronics Materials Co., Ltd.) 58.6 parts by mass, methyl ethyl ketone 22.5 parts by mass, 1-methoxypropyl- 18.9 parts by weight of 2-acetate, and a _{C 6 F 13 CH 2 CH 2} OCOCH = CH 2, H (O (CH 3) CHCH 2) 7 and _{OCOCH = CH 2, H (OCH} (CH 3) CH 2 ₇ ) Methyl ethyl ketone solution (manufactured by Dainippon Ink & Chemicals, trade name: Mega) of a copolymer with OCOCH = CH ₂ (copolymerization composition ratio (mass ratio) = 40/55/5, weight average molecular weight 30,000) FACK F780F) A coating solution for positive photosensitive layer comprising 0.03 part by mass It was prepared by the law.

The positive photosensitive layer on the substrate was exposed by the exposure apparatus and exposure method described below.
As a light source, laser light having a wavelength of 405 nm was irradiated with 300 mJ / cm ² so that a 15-step step wedge pattern (ΔOD = 0.15) and a desired in-cell structure pattern were obtained.

  With respect to the formed in-cell structure pattern, exposure sensitivity, resolution, failure rate, and line width variation were evaluated by the following methods. The results are shown in Table 1.

<< Exposure apparatus, exposure method >>
The combined laser light source shown in FIGS. 8 to 9 and 25 to 29 as the light irradiating means, and 1024 micromirrors 58 arranged in the main scanning direction schematically shown in FIG. 6 as the light modulating means. DMD 36 controlled to drive only 1024 × 256 rows among 768 sets of mirror rows arranged in the sub-scanning direction, and an optical system for imaging the light shown in FIG. 5 on the photosensitive layer The exposure apparatus 10 provided with the exposure head 30 was used.

As the set inclination angle of each exposure head 30, that is, each DMD 36, an angle slightly larger than the angle θ _{ideal at} which double exposure is performed using a usable 1024 column × 256 row micromirror 58 was adopted. This angle θ _ideal is equal to the number N of N double exposures, the number s of usable micromirrors 58 in the column direction, the interval p of usable micromirrors 58 in the column direction, and the microscopic exposure head 30 in a tilted state. For the pitch δ of the scanning line formed by the mirror,
spsinθ _ideal ≧ Nδ (Formula 1)
Given by. As described above, the DMD 36 according to the present embodiment includes a large number of micromirrors 58 having equal vertical and horizontal arrangement intervals arranged in a rectangular lattice shape.
pcosθ _ideal = δ (Formula 2)
And the above equation 1 is
stanθ _ideal = N (Formula 3)
Since s = 256 and N = 2, the angle θ _ideal is about 0.45 degrees. Therefore, for example, 0.50 degrees is adopted as the set inclination angle θ.

First, in order to correct the variation in resolution and uneven exposure in double exposure, the state of the exposed pixel pattern on the exposed surface was examined. The results are shown in FIG. In FIG. 18, the pattern of light spots from the micromirror 58 usable by the DMD 36 of the exposure heads 30 ₁₂ and 30 ₂₁ projected onto the exposed surface of the photosensitive layer 12 with the stage 14 being stationary. showed that. The state of the exposure pattern formed on the exposed surface when the stage 14 is moved and the continuous exposure is performed with the light spot group pattern as shown in the upper part appearing in the lower part. Are shown for exposure areas 32 ₁₂ and 32 ₂₁ . In FIG. 18, for convenience of explanation, every other exposure pattern of the micromirrors 58 that can be used is divided into an exposure pattern based on the pixel column group A and an exposure pattern based on the pixel column group B. The actual exposure pattern on the exposed surface is a superposition of these two exposure patterns.

As shown in FIG. 18, as a result of the deviation of the relative position between the exposure heads 30 ₁₂ and 30 ₂₁ from the ideal state, both the exposure pattern by the pixel column group A and the exposure pattern by the pixel column group B are both. Thus, it can be seen that, in the exposure areas overlapping on the coordinate axes orthogonal to the scanning direction of the exposure head in the exposure areas 32 ₁₂ and 32 ₂₁ , an overexposed area is generated as compared with the ideal double exposure state.

The use of a set of slits 28 and a photodetector as a light spot position detection means, the position of the point P of the exposure head _{30 12} For the exposure area _{32 12} (1,1) and P (256,1), the exposure head For 30 ₂₁ , the positions of the light spots P (1,1024) and P (256, 1024) in the exposure area 32 ₂₁ are detected, and the angle formed by the inclination angle of the straight line connecting them and the scanning direction of the exposure head is determined. It was measured.

Using the actual inclination angle θ ′, the following equation 4
ttanθ ′ = N (Formula 4)
The natural number T closest to the value t satisfying the relationship is derived for each of the exposure heads 30 ₁₂ and 30 ₂₁ . T = 254 for the exposure head _{30 12,} the exposure head _{30 21} T = 255 was derived respectively. As a result, the micromirrors constituting the portions 78 and 80 covered with diagonal lines in FIG. 19 were identified as micromirrors that are not used during the main exposure.

Thereafter, the micromirrors corresponding to the light spots other than the light spots constituting the regions 78 and 80 covered with the oblique lines in FIG. 19 were similarly covered with the shaded areas 82 and the shaded areas in FIG. Micromirrors corresponding to the light spots constituting the region 84 were identified and added as micromirrors that are not used during the main exposure.
With respect to the micromirrors that are specified not to be used at the time of exposure, a signal for setting the angle of the always-off state is sent by the pixel element control means, and these micromirrors are substantially exposed. It was controlled not to be involved.
As a result, in each of the exposure areas 32 ₁₂ and 32 ₂₁ , an ideal double exposure is performed in each area other than the inter-head connection area, which is an overlapping exposure area on the exposed surface formed by the plurality of exposure heads. Thus, the total area of the overexposed region and the underexposed region can be minimized.

<Exposure sensitivity>
In the obtained in-cell structure pattern, the thickness of the cured region of the remaining photosensitive layer was measured. Subsequently, the sensitivity curve was obtained by plotting the relationship between the irradiation amount of the laser beam and the thickness of the cured layer. The light energy amount at which the positive photosensitive layer on the substrate becomes zero was defined as the minimum light energy amount.

<Resolution>
For resolution evaluation, light irradiation of twice the above minimum exposure amount was performed, many images of holes with different diameters were formed, and this was observed with an optical microscope, and there was no residual film in the holes of the cured layer pattern. The diameter (μm) of the smallest hole was measured and used as the resolution. The smaller the numerical value, the better the resolution.

<Failure rate>
In order to evaluate the ease of occurrence of chipping and dropping off of the liquid crystal alignment control protrusions, light irradiation twice the above minimum exposure amount was performed to form a test image having a width of 6 μm, chipping in 100 images, and The number of omissions was counted. The smaller the count, the lower the failure rate and the better.

  Next, the color filter side substrate on which the structure was formed was baked at 230 ° C. for 30 minutes, whereby liquid crystal alignment control protrusions could be formed on the color filter side substrate. The shape of the liquid crystal alignment control protrusion was observed with a scanning electron microscope (SEM), and as a result, had a saddle-shaped cross-sectional shape with a line width of 11 μm and a central portion height of about 1.5 μm.

<Evaluation of line width variation>
In the liquid crystal alignment control protrusions, the line width of 100 arbitrary liquid crystal alignment control protrusion patterns was measured, and the variation was obtained. For the measurement of the line width, a length-measuring scanning electron microscope (SEM) (S-9260, manufactured by Hitachi High-Technologies Corporation) is used, and the line width (CD) of the line / space pattern under the conditions of an acceleration voltage of 300 V and a current value of 5 pA. ) Was measured.

(Example 2)
[Formation of liquid crystal alignment control protrusions]
-Production of transfer material (1) (film method having a positive photosensitive layer)-
As the support, on a polyethylene terephthalate (PET) film having a thickness of 75 μm, a thermoplastic resin layer coating solution H1 having the following composition is applied and dried, and a thermoplastic resin having a dry layer thickness of 14.6 μm is applied. A layer was formed.

<Preparation of coating liquid H1 for thermoplastic resin layer>
Methyl methacrylate / 2-ethylhexyl acrylate / benzyl methacrylate / methacrylic acid copolymer (copolymerization composition ratio (molar ratio) = 55 / 11.7 / 4.5 / 28.8, weight average molecular weight = 100,000, Tg≈70 ° C) methyl ethyl ketone, 1-methoxypropyl-2-acetate solution (manufactured by Mitsui Chemicals, FM-601), 55.5 parts by mass, styrene / acrylic acid copolymer (copolymerization composition ratio (molar ratio)) = 63 / 37, weight average molecular weight = 10,000, Tg≈100 ° C., methanol, methyl ethyl ketone, 1-methoxypropyl-2-acetate solution (Nippon Shokubai Co., Ltd., Alloset 7055) 64.8 mass, bisphenol A and pentaethylene glycol mono 1-methoxypropyl-2-acetate, a compound obtained by dehydration condensation of 2 equivalents of metacrete Liquid and (Shin-Nakamura Chemical Co., Ltd., 2,2-bis [4- (methacryloxy polyethoxy) phenyl] propane) 18.1 parts by mass, and _{C 6 F 13 CH 2 CH 2} OCOCH = CH 2, H Copolymer of (O (CH ₃ ) CHCH ₂ ) ₇ OCOCH═CH ₂ and H (OCH (CH ₃ ) CH ₂ ) ₇ OCOCH═CH ₂ (copolymerization composition ratio (mass ratio) = 40/55 / 5, a weight average molecular weight of 30,000 methyl ethyl ketone solution (Dainippon Ink Chemical Co., Ltd., trade name: Megafak F780F) 1.08 parts by mass and methyl ethyl ketone 60.5 parts by mass coating solution for thermoplastic resin layer Was prepared by a conventional method.

Subsequently, an intermediate layer coating solution B1 having the following composition was applied onto the thermoplastic resin layer and dried to form an intermediate layer having a dry layer thickness of 1.6 μm.
<Preparation of intermediate layer coating solution B1>
2.90 parts by mass of polyvinyl alcohol (degree of saponification = 82%, degree of polymerization 500, manufactured by Kuraray Co., Ltd., PVA-405), 1.49 parts by mass of polyvinyl pyrrolidone (manufactured by ASP Japan Co., Ltd., PVP K-30) An intermediate layer coating solution comprising 0.32 parts by mass of polypropylene glycol (Adeka Polyether G-300, manufactured by Asahi Denka Co., Ltd.), 42.9 parts by mass of methanol, and 52.4 parts by mass of distilled water was prepared by a conventional method. did.

  Subsequently, a positive photosensitive layer coating solution T1 having the above composition was prepared, further applied onto the intermediate layer, dried, and a positive photosensitive layer having a dry layer thickness of 2.0 μm was laminated.

  Further, a polyethylene film (thickness: 23 μm, manufactured by Tredegar, OSM-N) as a cover film is provided on the positive photosensitive layer by pressure bonding, and a thermoplastic resin layer, an intermediate layer, a positive type is provided on the support. A transfer material (1) in which a photosensitive layer and a cover film were laminated in this order was produced.

-Fabrication of cell internal structure-
First, a stripe-shaped black matrix having a predetermined size and shape and a frame-shaped light-shielding portion were formed on a glass substrate having a predetermined size by using the black matrix resin composition. Thereafter, a colored film composed of R (red), G (green), and B (blue) was formed at a predetermined position by the method for manufacturing a color filter described in Japanese Patent Application Laid-Open No. 2000-98599. Further, a transparent electrode film ITO was formed thereon by sputtering.

  Subsequently, the cover film is peeled off from the transfer material (1) obtained above, and the surface of the positive photosensitive layer and the surface on the side of the color filter side substrate on which the ITO film is provided are overlapped to form a laminator (trade name). : Lamic type II (manufactured by Hitachi Industries, Ltd.), and bonded under the conditions of 100 N / cm, temperature 130 ° C., and conveyance speed 2.2 m / min. Thereafter, only the support of the transfer material was peeled and removed at the interface with the thermoplastic resin layer. In this state, the positive photosensitive layer, the intermediate layer, and the thermoplastic resin layer are laminated in this order on the color filter side substrate.

Next, a laser beam having a wavelength of 405 nm is applied to the positive photosensitive layer on the substrate from above the thermoplastic resin layer, which is the outermost layer, in the same manner as in Example 1, with a 15-step step wedge pattern (ΔOD = 0.15), and 300 mJ / cm ^{2 was} irradiated so as to obtain a desired in-cell structure pattern.

Next, a 1% by mass triethanolamine aqueous solution was sprayed onto the substrate at 30 ° C. for 60 seconds with a shower type developing device to dissolve and remove the thermoplastic resin layer and the intermediate layer. At this stage, the positive photosensitive layer was not substantially developed.
Subsequently, 2.38 mass% tetramethylammonium hydroxide aqueous solution was developed while spraying on the substrate at 23 ° C. for 30 seconds using a shower type developing device, and an unnecessary part (exposed part) of the positive photosensitive layer was developed. Removed. As a result, a structure made of a positive photosensitive layer patterned into a desired shape was formed on the color filter side substrate.
Here, in the same manner as in Example 1, the exposure sensitivity, resolution, failure rate, and line width variation were evaluated for the in-cell structure. The results are shown in Table 1.

  Next, the color filter side substrate on which the structure was formed was baked at 230 ° C. for 30 minutes, whereby liquid crystal alignment control protrusions could be formed on the color filter side substrate. The shape of the liquid crystal alignment control protrusion was observed with a scanning electron microscope (SEM), and as a result, had a saddle-shaped cross-sectional shape with a line width of 11 μm and a central portion height of about 1.5 μm.

(Example 3)
[Formation of pillars]
-Production of transfer material (2) (film method having negative photosensitive layer)-
A photosensitive transfer material (2) was produced in the same manner as in Example 2, except that the positive photosensitive layer coating solution was replaced with the negative photosensitive layer coating solution shown below. The film thickness of the negative photosensitive layer after drying was 4.0 μm. However, a 12 μm-thick polypropylene film was used as the cover film.

-Preparation of negative photosensitive layer coating solution T1-
Methacrylic acid / allyl methacrylate copolymer (molar ratio = 20/80, weight average molecular weight = 40,000) 3.0 parts by weight, dipentaerythritol hexaacrylate 1.8 parts by weight, silica sol 30% by weight methyl isobutyl ketone dispersion (MIBK-ST, manufactured by Nissan Chemical Co., Ltd.) 7.1 parts by mass, phenothiazine 0.001 parts by mass, B-CIM (manufactured by Hodogaya Chemical) 0.3 parts by mass, NBCA (manufactured by Kurokin Chemical) 0.05 parts by weight, 0.01 parts by weight of N-phenylmercaptobenzimidazole, 0.02 parts by weight of Aizen Victoria Pure Blue BOH-M (Hodogaya Chemical Co., Ltd.), C ₆ F ₁₃ CH ₂ CH ₂ OCOCH═CH ₂ and H (O ( CH ₃ ) CHCH ₂ ) ₇ OCOCH═CH ₂ and H (OCH (CH ₃ ) CH ₂ ) ₇ OCOCH═CH ₂ 8.6 parts by mass of a polymer (copolymerization composition ratio (mass ratio) = 40/55/5, weight average molecular weight 30,000) methyl ethyl ketone solution (manufactured by Dainippon Ink and Chemicals, trade name: Megafak F780F) A negative photosensitive layer coating solution T1 comprising 0.5 parts by mass of methanol was prepared by a conventional method.

Next, the cover film of the produced photosensitive transfer material T1 was peeled off, and this was applied to a laminator (manufactured by Hitachi Industries, Ltd.) on a color filter produced in the same manner as in Example 2 in which ITO was sputtered. Laminic type II) was used and bonded at a conveyance speed of 2.2 m / min under pressure and heating conditions of a linear pressure of 100 N / cm and 130 ° C.
Thereafter, the support (polyethylene terephthalate film) was removed from the thermoplastic resin layer and removed.

<Exposure process>
After peeling off the temporary support, a laser beam having a wavelength of 405 nm, a 15-step step wedge pattern (ΔOD = 0.15), and the desired exposure apparatus similar to those in Example 1 are used. In order to obtain an in-cell structure pattern, exposure was performed by irradiation with 20 mJ / cm ² to cure a part of the photosensitive layer.

Next, a 1% by mass triethanolamine aqueous solution was sprayed onto the substrate at 30 ° C. for 60 seconds with respect to the photosensitive layer to dissolve and remove the thermoplastic resin layer and the intermediate layer. At this stage, the positive photosensitive layer was not substantially developed.
Subsequently, a KOH developer [(Fuji Film Electronics Materials Co., Ltd., trade name: CDK-1) diluted 100 times (mass ratio)] was used at 25 ° C. using a shower type developing device. Development was performed while spraying the substrate with a shower nozzle for 60 seconds, and unnecessary portions (unexposed portions) of the negative photosensitive layer were developed and removed. Then, on the color filter side substrate, a structure composed of a negative photosensitive layer patterned in a desired shape was formed.
Here, in the same manner as in Example 1, the exposure sensitivity, resolution, failure rate, and line width variation of the in-cell structure pattern were evaluated. The results are shown in Table 1.
However, since it is a negative type, the sensitivity is set such that the thickness of the cured region is 4.0 μm from the sensitivity curve, and the amount of energy when the surface of the cured region is a glossy surface is the required amount of light energy. As for the failure rate, 100 dots with a diameter of 6 μm, which are easy to drop out because they are pillars, are formed and evaluated by counting the number of dropouts. Was measured and evaluated.

  Next, the color filter side substrate on which the structure was formed was baked at 230 ° C. for 30 minutes, whereby spacers (columns) could be formed on the color filter side substrate. As a result of observation with a scanning electron microscope (SEM), the cross-sectional shape of this spacer was a trapezoid having a bottom portion of 14 μm and an upper portion of 12 μm.

(Comparative Example 1)
In the exposure apparatus of Embodiment 1, the set inclination angle θ is calculated with N = 1 based on the above equation 3, and the natural number T closest to the value t satisfying the relationship of t tan θ ′ = 1 is derived based on the above equation 4. An in-cell structure pattern was formed in the same manner as in Example 1 except that multiple exposure (N = 1) was performed, and exposure sensitivity, resolution, failure rate, and line width variation were evaluated for the in-cell structure pattern. did. The results are shown in Table 1.

(Comparative Example 2)
In the exposure apparatus of Embodiment 1, the set inclination angle θ is calculated with N = 1 based on the above equation 3, and the natural number T closest to the value t satisfying the relationship of t tan θ ′ = 1 is derived based on the above equation 4. An in-cell structure pattern was formed in the same manner as in Example 2 except that heavy exposure (N = 1) was performed, and exposure sensitivity, resolution, failure rate, and line width variation were evaluated for the in-cell structure pattern. did. The results are shown in Table 1.

(Comparative Example 3)
In the exposure apparatus of Embodiment 1, the set inclination angle θ is calculated with N = 1 based on the above equation 3, and the natural number T closest to the value t satisfying the relationship of t tan θ ′ = 1 is derived based on the above equation 4. An in-cell structure pattern was formed in the same manner as in Example 3 except that multiple exposure (N = 1) was performed, and exposure sensitivity, resolution, failure rate, and line width variation were evaluated for the in-cell structure pattern. did. The results are shown in Table 1.

In addition, the example of the state of exposure of the to-be-exposed surface in Comparative Examples 1-3 was shown in FIG. In FIG. 38, the light spot from the usable micromirror 58 of the DMD 36 of one exposure head (for example, 30 ₁₂ ) projected onto the exposed surface of the photosensitive material 12 with the stage 14 being stationary. The group pattern was shown. The state of the exposure pattern formed on the exposed surface when the stage 14 is moved and the continuous exposure is performed with the light spot group pattern as shown in the upper part appearing in the lower part. For one exposure area (eg, 32 ₁₂ ).
An example of pattern distortion appearing on an exposed surface as a result of a deviation from an ideal state of the one exposure head (for example, 30 ₁₂ ), and an inclination of each pixel row projected on the exposed surface An “angular distortion” occurs in which the angle is not uniform. The angular distortion appearing in the example of FIG. 38 is a distortion in which the inclination angle with respect to the scanning direction is larger in the left column of the figure and smaller in the right column of the figure. As a result of this angular distortion, an overexposed area is formed on the exposed surface shown on the left side of the figure, and an underexposed area is formed on the exposed surface shown on the right side of the figure.

From the results shown in Table 1, the in-cell structures of Examples 1 to 3 in which the variation in resolution and the exposure unevenness in the double exposure were corrected compared to the in-cell structures of Comparative Examples 1 to 3 were high definition and the line width It was found that the variation was small.

[Production and Evaluation of Display Device]
Using the substrates with protrusions for controlling liquid crystal alignment of Examples 1 to 3, liquid crystal panels were produced by a known method (Japanese Patent Laid-Open No. 11-248921), and the display performance was evaluated. As a result, it was confirmed that the produced liquid crystal panel (display device) exhibited good display characteristics.

The in-cell structure manufactured by the method for manufacturing an in-cell structure of the present invention is used for liquid crystal display devices (LCD) such as portable terminals and portable game machines, for liquid crystal display devices (LCD) such as notebook computers and television monitors, and PALC. (Plasma address liquid crystal), It is used suitably for display apparatuses, such as a plasma display.

FIG. 1 is a perspective view showing an appearance of an example of an exposure apparatus. FIG. 2 is a perspective view showing an example of the configuration of the scanner of the exposure apparatus. FIG. 3A is a plan view showing an exposed region formed on the exposed surface of the photosensitive layer. FIG. 3B is a plan view showing an arrangement of exposure areas by each exposure head. FIG. 4 is a perspective view showing an example of a schematic configuration of the exposure head. FIG. 5A is a top view showing an example of a detailed configuration of the exposure head. FIG. 5B is a side view showing an example of a detailed configuration of the exposure head. FIG. 6 is a partially enlarged view showing an example of the DMD of the exposure apparatus of FIG. FIG. 7A is a perspective view for explaining the operation of the DMD. FIG. 7B is a perspective view for explaining the operation of the DMD. FIG. 8 is a perspective view showing an example of the configuration of the fiber array light source. FIG. 9 is a front view showing an example of the arrangement of light emitting points in the laser emitting section of the fiber array light source. FIG. 10 is an explanatory diagram showing an example of unevenness that occurs in the pattern on the exposed surface when there is an exposure head mounting angle error and pattern distortion. FIG. 11 is a top view showing a positional relationship between an exposure area by one DMD and a corresponding slit. FIG. 12 is a top view for explaining a method of measuring the position of the light spot on the exposed surface using a slit. FIG. 13 is an explanatory diagram showing a state in which unevenness generated in a pattern on an exposed surface is improved as a result of using only selected micromirrors for exposure. FIG. 14 is an explanatory diagram showing an example of unevenness that occurs in the pattern on the exposed surface when there is a relative position shift between adjacent exposure heads. FIG. 15 is a top view showing the positional relationship between the exposure areas by two adjacent exposure heads and the corresponding slits. FIG. 16 is a top view for explaining a method of measuring the position of the light spot on the exposed surface using a slit. FIG. 17 is an explanatory diagram showing a state in which only the used pixels selected in the example of FIG. 14 are actually moved and the unevenness in the pattern on the exposed surface is improved. FIG. 18 is an explanatory diagram showing an example of unevenness that occurs in the pattern on the exposed surface when there is a relative position shift and a mounting angle error between adjacent exposure heads. FIG. 19 is an explanatory diagram showing exposure using only the used pixel portion selected in the example of FIG. FIG. 20A is an explanatory diagram showing an example of magnification distortion. FIG. 20B is an explanatory diagram showing an example of beam diameter distortion. FIG. 21A is an explanatory view showing a first example of reference exposure using a single exposure head. FIG. 21B is an explanatory diagram showing a first example of reference exposure using a single exposure head. FIG. 22 is an explanatory diagram showing a first example of reference exposure using a plurality of exposure heads. FIG. 23A is an explanatory diagram showing a second example of reference exposure using a single exposure head. FIG. 23B is an explanatory diagram showing a second example of reference exposure using a single exposure head. FIG. 24 is an explanatory view showing a second example of reference exposure using a plurality of exposure heads. FIG. 25 is an example of a diagram illustrating a configuration of a multimode optical fiber. FIG. 26 is an example of a plan view showing the configuration of the combined laser light source. FIG. 27 is an example of a plan view showing the configuration of the laser module. FIG. 28 is an example of a side view showing the configuration of the laser module shown in FIG. FIG. 29 is a partial side view showing the configuration of the laser module shown in FIG. FIG. 30 is an example of a perspective view showing a configuration of a laser array. FIG. 31A is an example of a perspective view showing a configuration of a multi-cavity laser. FIG. 31B is an example of a perspective view of a multi-cavity laser array in which the multi-cavity lasers shown in FIG. 31A are arranged in an array. FIG. 32 is an example of a plan view showing another configuration of the combined laser light source. FIG. 33 is an example of a plan view showing another configuration of the combined laser light source. FIG. 34A is an example of a plan view showing another configuration of the combined laser light source. FIG. 34B is an example of a cross-sectional view along the optical axis of FIG. 34A. FIG. 35 is a cross-sectional view showing an example of a substrate having dot-like spacers and protrusions formed on a conductive layer. FIG. 36 is a cross-sectional configuration diagram illustrating an example of the display device of the present invention. FIG. 37 is a cross-sectional configuration diagram showing another example of the display device of the present invention. FIG. 38 is an explanatory diagram showing an example of unevenness generated in the pattern on the exposed surface due to “angular distortion” in which the inclination angle of each pixel column is not uniform in Comparative Example 1.

Explanation of symbols

B1 to B7 Laser beam L1 to L7 Collimator lens LD1 to LD7 GaN-based semiconductor laser 10 Exposure apparatus 12 Photosensitive layer (photosensitive material)
DESCRIPTION OF SYMBOLS 14 Moving stage 18 Installation stand 20 Guide 22 Gate 24 Scanner 26 Sensor 28 Slit 30 Exposure head 32 Exposure area 36 Digital micromirror device (DMD)
38 Fiber array light source 58 Micro mirror (picture element)
60 laser module 62 multimode optical fiber 64 optical fiber 66 laser emitting section 110 heat block 111 multicavity laser 113 rod lens 114 lens array 140 laser array 200 condenser lens

Claims (16)

Consisting of a photosensitive composition containing at least a binder, for the photosensitive layer located on the surface of the substrate,
A light irradiating means, and n (where n is a natural number of 2 or more) two-dimensionally arranged picture elements that receive and emit light from the light irradiating means, and according to the pattern information, An exposure head provided with a light modulation means capable of controlling a picture element portion, the exposure head being arranged so that a column direction of the picture element portion forms a predetermined set inclination angle θ with respect to a scanning direction of the exposure head Using the head
With respect to the exposure head, the usable pixel part designating means designates the pixel part to be used for N double exposure (where N is a natural number of 2 or more) among the usable graphic elements.
For the exposure head, the pixel part control means controls the pixel part so that only the pixel part specified by the used pixel part specifying means is involved in exposure,
An exposure step of performing exposure by moving the exposure head relative to the photosensitive layer in the scanning direction; and
And a development step of developing the photosensitive layer exposed in the exposure step.   Exposure is performed by a plurality of exposure heads, and a used pixel part specifying means is used for exposing a pixel part related to exposure of a head-to-head connection area, which is an overlapping exposure area on an exposed surface formed by the plurality of exposure heads. 2. The method for manufacturing an in-cell structure according to claim 1, wherein the picture element portion used for realizing N double exposure in the inter-head connecting region is designated.   Picture element part in which exposure is performed by a plurality of exposure heads and the used picture element part specifying means is involved in exposure other than the inter-head joint area which is an overlapping exposure area on the exposed surface formed by the plurality of exposure heads 3. The method for manufacturing an in-cell structure according to claim 2, wherein the pixel portion used to realize N double exposure in an area other than the inter-head connecting area is designated. The set inclination angle θ is N of N multiple exposure numbers, the number s of pixel portions in the column direction, the interval p in the column direction of the pixel portions, and the scanning direction of the exposure head when the exposure head is inclined. to the column direction of the pitch δ of pixel parts along a direction orthogonal, the following equation with respect to theta _ideal satisfying spsinθ _ideal ≧ Nδ, claim 1 is set so as to satisfy the relation of θ ≧ θ _ideal 3 The manufacturing method of the structure in a cell in any one of. Use pixel part designation means,
A light spot position detecting means for detecting a light spot position on a surface to be exposed as a pixel unit generated by a picture element unit and constituting an exposure area on the surface to be exposed;
5. The in-cell structure according to claim 1, further comprising: a pixel part selection unit that selects a pixel part to be used for realizing N double exposure based on a detection result by the light spot position detection unit. Manufacturing method.   6. The use pixel unit specifying unit includes a slit and a photodetector as a light spot position detection unit, and an arithmetic unit connected to the photodetector as a pixel unit selection unit. A method for manufacturing a cell internal structure.   The method for producing an in-cell structure according to any one of claims 1 to 6, wherein N of N double exposure is a natural number of 3 or more and 7 or less.   8. The method for manufacturing an in-cell structure according to claim 1, wherein the light modulation means is a spatial light modulation element.   The method for manufacturing an in-cell structure according to claim 8, wherein the spatial light modulation element is a digital micromirror device (DMD).   The method for producing an in-cell structure according to any one of claims 1 to 9, wherein the light irradiation means can synthesize and irradiate two or more lights.   The light irradiation means includes a plurality of lasers, a multimode optical fiber, and a collective optical system for condensing the laser beams irradiated from the plurality of lasers and converging them on the incident end face of the multimode optical fiber. Item 11. A method for producing an in-cell structure according to any one of Items 1 to 10.   The method for producing a structure in a cell according to any one of claims 1 to 11, wherein the photosensitive layer is one of a positive photosensitive layer and a negative photosensitive layer.   The method for producing an in-cell structure according to claim 12, wherein the positive photosensitive layer contains at least two selected from a phenol resin and a naphthoquinonediazide derivative.   An in-cell structure manufactured by the method for manufacturing an in-cell structure according to claim 1.   The in-cell structure according to claim 14, which is at least one of a column, a liquid crystal alignment control protrusion, a stacked column, and an insulating film. A display device using the intra-cell structure according to claim 14.