JP2007003949A - Optical device - Google Patents

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JP2007003949A
JP2007003949A JP2005185723A JP2005185723A JP2007003949A JP 2007003949 A JP2007003949 A JP 2007003949A JP 2005185723 A JP2005185723 A JP 2005185723A JP 2005185723 A JP2005185723 A JP 2005185723A JP 2007003949 A JP2007003949 A JP 2007003949A
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temperature
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phase transition
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JP4819415B2 (en
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Toshihiro Ito
敏洋 伊藤
Kazuo Fujiura
和夫 藤浦
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Nippon Telegraph and Telephone Corp
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical device having a uniform electrooptical effect even when an optical element wherein phase transition temperatures in a plurality of places in the one optical element are different from each other is used. <P>SOLUTION: The optical device having the optical element 1 formed by using a material having the electrooptical effect and inducing paraelectric/ferroelectric phase transition at a phase transition temperature is provided with a first temperature adjusting element 8-1 for adjusting the temperature at a first place of the optical element and a second temperature adjusting element 8-2 for adjusting the temperature at a second place of the optical element. The first and the second temperature adjusting elements hold temperature at the first and the second places to temperature at which a desired electrooptical coefficient is shown based on the temperature measured by a temperature detecting element 2 or the capacitance measured by a capacitance measuring circuit 12 and a characteristic of the electrooptical effect of the optical device can be made uniform. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は電気光学効果を利用する光デバイスに関する。より詳細には、本発明は、電気光学効果を利用する光デバイスにおける光素子の温度制御に関する。   The present invention relates to an optical device using an electro-optic effect. More specifically, the present invention relates to temperature control of an optical element in an optical device that uses an electro-optic effect.

コンピュータや情報家電などを含む様々な端末がネットワークに接続され、通信の形態が多様化している。このような状況下、大容量の情報を高速に伝送できる通信システムが望まれており、そのような通信システムとして光通信技術を用いたシステムが有望である。近年はこのような光通信技術の発展により、光素子に対する要求も多様になり、また高度になってきている。   Various terminals including computers and information appliances are connected to a network, and communication forms are diversified. Under such circumstances, a communication system capable of transmitting a large amount of information at high speed is desired, and a system using optical communication technology is promising as such a communication system. In recent years, with the development of such optical communication technology, demands for optical elements have been diversified and advanced.

光通信システムの大容量、高速化ならびに高機能化に対して期待されている光デバイスとして、光スイッチや光変調器等があり、それら光デバイスに用いられる材料として、電気光学効果を有する材料(「電気光学材料」とも呼ぶ)が注目されている。最近では、電気光学材料として、高い電気光学係数を有するKTa1−xNb(0<x<1)(KTN)という材料が注目されている。さらに、この材料の大型の結晶が作製可能になったためにその応用が注目されている。 Examples of optical devices that are expected to increase the capacity, speed, and functionality of optical communication systems include optical switches and optical modulators, and materials used for these optical devices have electro-optic effects ( Also called “electro-optic material”). Recently, a material called KTa 1-x Nb x O 3 (0 <x <1) (KTN) having a high electro-optic coefficient has attracted attention as an electro-optic material. Furthermore, since the large crystals of this material can be produced, its application is drawing attention.

このKTNという材料は、Nb/(Nb+Ta)比(本明細書では、単に「組成」とも呼ぶ)により、強誘電・常誘電転移温度を、−273℃から+470℃まで変えることができる。   This material called KTN can change the ferroelectric-paraelectric transition temperature from −273 ° C. to + 470 ° C. by the Nb / (Nb + Ta) ratio (also simply referred to as “composition” in this specification).

図1に、電気光学材料の電気光学係数の温度依存性の例を示す。この材料は常誘電・強誘電相転移温度(T)(本明細書では、単に「相転移温度」とも呼ぶ)において相転移をおこすこと、この相転移温度近傍で大きな誘電率を持つこと、および、この相転移温度近傍で非常に大きな電気光学係数を有し、電気光学効果が最大になることが知られている。また、この材料の電気光学効果は、常誘電・強誘電相転移温度近傍で用いた場合に非常に大きいことが知られている。 FIG. 1 shows an example of the temperature dependence of the electro-optic coefficient of the electro-optic material. This material undergoes a phase transition at the paraelectric-ferroelectric phase transition temperature (T c ) (also referred to herein simply as “phase transition temperature”), and has a large dielectric constant near this phase transition temperature, It is also known that the electro-optic effect is maximized by having a very large electro-optic coefficient in the vicinity of the phase transition temperature. In addition, it is known that the electro-optic effect of this material is very large when used near the paraelectric / ferroelectric phase transition temperature.

また、この材料を応用した光スイッチが知られている(非特許文献1参照)。図2に、非特許文献1に記載された光スイッチの構成を示す。
図2に示す光スイッチは、KTN材料を用いて導波路を形成し、それによってマッハツェンダー型の干渉計を構成して作製された光素子1を挟むように、温度検知素子2とペルチェ素子3とが設けられている。また、温度検知素子2およびペルチェ素子3は、温度制御回路4に導線などを介して電気的に接続(本明細書では、単に「電気的に接続される」とも呼ぶ)されている。図2の構成では、光素子1の温度制御にペルチェ素子3を用いてその温度を制御している。すなわち、温度制御回路4は、温度検知素子2によって検知された光素子1の温度に関する電気信号に基づいて、ペルチェ素子3を制御する。
An optical switch using this material is known (see Non-Patent Document 1). FIG. 2 shows the configuration of the optical switch described in Non-Patent Document 1.
The optical switch shown in FIG. 2 includes a temperature detecting element 2 and a Peltier element 3 so as to sandwich an optical element 1 formed by forming a waveguide using a KTN material and thereby forming a Mach-Zehnder interferometer. And are provided. Further, the temperature detection element 2 and the Peltier element 3 are electrically connected to the temperature control circuit 4 via a conductive wire or the like (in this specification, simply referred to as “electrically connected”). In the configuration of FIG. 2, the temperature of the optical element 1 is controlled by using the Peltier element 3. That is, the temperature control circuit 4 controls the Peltier element 3 based on the electrical signal relating to the temperature of the optical element 1 detected by the temperature detection element 2.

温度制御回路4は、光素子1の温度を相転移温度よりも高い温度に一定に保持するように、ペルチェ素子3を制御する。このように光素子1の温度を制御することで、光スイッチの電気光学効果の特性がずれることを防止している。   The temperature control circuit 4 controls the Peltier element 3 so as to keep the temperature of the optical element 1 constant at a temperature higher than the phase transition temperature. By controlling the temperature of the optical element 1 in this way, the characteristic of the electro-optic effect of the optical switch is prevented from shifting.

S. Toyoda et al, ”LOW DRIVING VOLTAGE POLARIZATION-INDEPENDENT > 3 GHz-RESPONSE ELECTRO-OPTIC SWITCH USING KTN WAVEGUIDES” Proc. ECOC 2003S. Toyoda et al, “LOW DRIVING VOLTAGE POLARIZATION-INDEPENDENT> 3 GHz-RESPONSE ELECTRO-OPTIC SWITCH USING KTN WAVEGUIDES” Proc. ECOC 2003

しかし、KTa1-xNbは製造上、Nb/(Ta+Nb)比を完全に均一とすることが困難である。したがって、組成の不均一に起因して、同一の光素子の異なる場所における相転移温度(T)にばらつきが生じることは避けられない。 However, it is difficult to make the Nb / (Ta + Nb) ratio completely uniform in the manufacture of KTa 1-x Nb x O 3 . Accordingly, it is inevitable that the phase transition temperature (T C ) at different locations of the same optical element varies due to the non-uniform composition.

図3に、同一の光素子の2つの場所1および2についての、電気光学係数を測定した結果を示す。場所1および2の相転移温度TC1およびTC2は、組成の不均一に起因して、相違する温度を示す。その結果、同一の光素子における異なる場所1および2では、温度が同一であっても、電気光学係数が異なり、場所1および2の電気光学効果の特性も異なる。 FIG. 3 shows the result of measuring the electro-optic coefficient for two locations 1 and 2 of the same optical element. The phase transition temperatures T C1 and T C2 at locations 1 and 2 show different temperatures due to compositional inhomogeneities. As a result, at different locations 1 and 2 in the same optical element, even if the temperature is the same, the electro-optic coefficient is different and the properties of the electro-optic effect at locations 1 and 2 are also different.

また、図示のように、光素子の電気光学係数は、相転移温度TC1およびTC2付近で大きく変化する。したがって、光素子の場所1および2の温度を相転移温度TC1またはTC2に近い温度に一様に制御すると、場所1および2における電気光学係数が大きく異なり、場所1および2の電気光学効果の特性が不均一になり、最大の特性を引き出すことができなくなって、その結果として光素子全体の特性が低下するという問題があった。 Further, as shown in the figure, the electro-optic coefficient of the optical element changes greatly in the vicinity of the phase transition temperatures T C1 and T C2 . Therefore, when the temperature of the optical elements 1 and 2 is uniformly controlled to a temperature close to the phase transition temperature T C1 or T C2 , the electro-optic coefficient at the locations 1 and 2 is greatly different, and the electro-optic effect at the locations 1 and 2 is different. As a result, there is a problem that the characteristics of the entire optical device are deteriorated.

例えば、光素子の両端である場所1および2における組成がそれぞれx1およびx2であったとして、組成x1およびx2に応じた相転移温度がTC1およびTC2(TC1<TC2)であったとする。そのとき、光素子の温度を一様にTC1に設定したとすると、場所2では、相転移温度からTC1−TC2だけ離れた点に温度が設定されることになり、電気光学係数が相転移温度に設定した場合に比べて低下してしまう。 For example, assuming that the compositions at locations 1 and 2 at both ends of the optical element are x1 and x2, respectively, the phase transition temperatures corresponding to the compositions x1 and x2 are T C1 and T C2 (TC 1 <TC 2 ). To do. Then, assuming that the temperature of the optical element is set to uniformly T C1, the location 2, will be the temperature at a point away from the phase transition temperature by T C1 -T C2 is set, the electro-optic coefficient Compared to the case where the phase transition temperature is set, the temperature is lowered.

相転移温度が場所1から場所2まで一様に変化していたと仮定し、温度変化に伴う電気光学係数の変化も線形であって場所1から場所2まで一様に変化していたという近似をし、さらに場所2での電気光学係数が場所1に比べて半分になっている状況を仮定すると、場所1から場所2にわたる光デバイス全体として、実効的な電気光学係数は(1+0.5)/2=0.75となり、全体が相転移温度に設定されたときと比べて約25%低下してしまうことになる。   Assuming that the phase transition temperature has changed uniformly from place 1 to place 2, an approximation that the change in electro-optic coefficient with temperature change was also linear and changed from place 1 to place 2 uniformly. Further, assuming that the electro-optic coefficient at the location 2 is halved compared with the location 1, the effective electro-optic coefficient for the entire optical device from the location 1 to the location 2 is (1 + 0.5) / 2 = 0.75, which is about 25% lower than when the whole is set to the phase transition temperature.

本発明は、このような問題に鑑みてなされたものであり、その目的とするところは、1つの光素子内の複数の場所における相転移温度が異なる光素子、あるいは組成および温度に依存する電気光学係数を有する材料で形成された光素子を用いても、電気光学効果の特性を均一にすることができる光デバイスを提供することにある。   The present invention has been made in view of such a problem, and an object of the present invention is to provide an optical device having different phase transition temperatures at a plurality of locations in one optical device, or an electric device depending on the composition and temperature. An object of the present invention is to provide an optical device capable of making the characteristics of the electro-optic effect uniform even when an optical element formed of a material having an optical coefficient is used.

本発明は、このような目的を達成するために、請求項1記載の発明は、電気光学効果を有し、相転移温度で常誘電・強誘電相転移を起こす材料で形成された光素子を有する光デバイスであって、前記光素子の第1の場所の温度を調整する第1の温度調整手段と、前記光素子の第2の場所の温度を調整する第2の温度調整手段とを備えたことを特徴とする。   In order to achieve the above object, the present invention provides an optical element formed of a material having an electro-optic effect and causing a paraelectric / ferroelectric phase transition at a phase transition temperature. An optical device comprising: first temperature adjusting means for adjusting the temperature of the first location of the optical element; and second temperature adjusting means for adjusting the temperature of the second location of the optical element. It is characterized by that.

請求項2に記載の発明は、請求項1に記載の光スイッチであって、前記光素子の前記第1の場所の温度を測定する第1の温度測定手段と、前記光素子の前記第2の場所の温度を測定する第2の温度測定手段と、測定される前記第1の場所の温度が予め定められた第1の温度に保持するように前記第1の温度調整手段を制御する第1の温度制御手段と測定される前記第2の場所の温度が予め定められた第2の温度に保持するように前記第2の温度調整手段を制御する第2の温度制御手段とをさらに備えたことを特徴とする。   The invention according to claim 2 is the optical switch according to claim 1, wherein the first temperature measuring means for measuring the temperature of the first location of the optical element, and the second of the optical element. Second temperature measuring means for measuring the temperature of the first place and first temperature adjusting means for controlling the first temperature adjusting means so that the temperature of the first place to be measured is maintained at a predetermined first temperature. And a second temperature control means for controlling the second temperature adjusting means so that the temperature of the second place to be measured is maintained at a predetermined second temperature. It is characterized by that.

請求項3に記載の発明は、請求項1に記載の光スイッチであって、前記光素子の前記第1の場所の電気容量を測定する第1の容量測定手段と、前記光素子の前記第2の場所の電気容量を測定する第2の容量測定手段と、測定される前記第1の場所の電気容量が予め定められた第1の値となる温度に、前記第1の場所の温度を保持するように前記第1の温度調整手段を制御する第1の温度制御手段と測定される前記第2の場所の電気容量が予め定められた第2の値となる温度に、前記第2の場所の温度を保持するように前記第2の温度調整手段を制御する第2の温度制御手段とをさらに備えたことを特徴とする。   A third aspect of the present invention is the optical switch according to the first aspect, wherein the first capacitance measuring means for measuring the capacitance of the first location of the optical element, and the first of the optical element. A second capacitance measuring means for measuring the electric capacity of the second place, and the temperature of the first place is set to a temperature at which the electric capacity of the first place to be measured becomes a predetermined first value. The first temperature control means for controlling the first temperature adjustment means to hold and the second capacitance measured at the second location is set to a temperature at which the second value is predetermined. And a second temperature control means for controlling the second temperature adjusting means so as to maintain the temperature of the place.

請求項1ないし3のいずれかに記載の光デバイスにおいて、前記材料を、KTa1-xNb3(0<x<1)、または、K1-yLiyTa1-xNb3(0<x<1、0<y<1)とすることができる。 4. The optical device according to claim 1, wherein the material is KTa 1-x Nb x O 3 (0 <x <1) or K 1-y Li y Ta 1-x Nb x O. 3 (0 <x <1, 0 <y <1).

以上説明したように、本発明によれば、相転移温度が異なる光素子内の2つの場所の温度を、それぞれ制御して保持することにより、1つの光素子内の2つの場所における相転移温度が異なる光素子、あるいは組成および温度に依存する電気光学係数を有する材料で形成された光素子を用いても、電気光学効果の特性を均一にすることができる光デバイスを提供することができる。   As described above, according to the present invention, the temperature at two locations in an optical element having different phase transition temperatures is controlled and held, whereby the phase transition temperatures at two locations in one optical device are controlled. An optical device that can make the characteristics of the electro-optic effect uniform can be provided even when an optical element having a different electromagnetism or an optical element made of a material having an electro-optic coefficient depending on the composition and temperature is used.

以下、図面を参照して本発明の実施形態を詳細に説明する。なお、以下で説明する図面で、同一機能を有するものは同一符号を付し、その繰り返しの説明は、省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same functions are denoted by the same reference numerals, and repeated description thereof is omitted.

本発明の光デバイスは、相転移温度で常誘電・強誘電相転移を起こす材料で形成された光素子を有し、相転移温度が異なる光素子内の複数の場所の温度を、それぞれ制御して保持する。これにより、1つの光素子内の複数の場所における相転移温度がそれぞれ異なる光素子、あるいは組成および温度に依存する電気光学係数を有する材料で形成された光素子を用いても、一様な電気光学効果を有する光デバイスを提供することができる。   The optical device of the present invention has an optical element formed of a material that causes a paraelectric / ferroelectric phase transition at a phase transition temperature, and controls temperatures of a plurality of locations in the optical element having different phase transition temperatures. Hold. As a result, even if an optical element having different phase transition temperatures at a plurality of locations in one optical element or an optical element formed of a material having an electro-optic coefficient depending on the composition and temperature is used, uniform electrical An optical device having an optical effect can be provided.

また、本発明の光デバイスは、相転移温度が異なる光素子内の複数の場所の電気容量を測定し、測定された電気容量に基づいてそれぞれの場所の温度を制御して保持するように構成することもできる。   Further, the optical device of the present invention is configured to measure the capacitance of a plurality of locations in an optical element having different phase transition temperatures, and to control and hold the temperature of each location based on the measured capacitance. You can also

材料の電気光学係数と温度の関係は、図3に示したように単一のピークをもつため、所望の電気光学係数を得ることができる温度は、相転移温度をはさんで2つある。このため、常誘電相で用いる場合には、光素子の温度を、常に相転移温度より高くする必要がある。   Since the relationship between the electro-optic coefficient and the temperature of the material has a single peak as shown in FIG. 3, there are two temperatures at which the desired electro-optic coefficient can be obtained across the phase transition temperature. For this reason, when used in the paraelectric phase, the temperature of the optical element must always be higher than the phase transition temperature.

例えば、光素子の所望の場所の各々について、あらかじめの相転移温度を調べておき、それぞれの場所の温度を、相転移温度よりも高い温度に制御するように、温度制御回路を構成することができる。あるいは、それぞれの場所について、温度を十分に上げてから、徐々に温度を下げ、電気光学係数が増加する範囲で、所望の電気光学係数となる温度に制御するように、温度制御回路を構成するようにしても良い。   For example, the temperature control circuit may be configured so that the phase transition temperature is examined in advance for each desired location of the optical element, and the temperature at each location is controlled to be higher than the phase transition temperature. it can. Alternatively, the temperature control circuit is configured to control the temperature to a desired electro-optic coefficient within a range where the temperature is gradually increased and the electro-optic coefficient is increased after the temperature is sufficiently raised. You may do it.

本発明に係る光デバイスは、電気光学効果を有する光素子を用いるデバイスであれば、光スイッチ、光変調器、Qスイッチ、ディフレクタなどのいずれであってもよい。   The optical device according to the present invention may be an optical switch, an optical modulator, a Q switch, a deflector, or the like as long as it is a device using an optical element having an electro-optic effect.

また、光素子を形成する材料としては、常誘電・強誘電相転移を起こす材料であって、組成と温度に依存する電気光学効果を有する材料であれば、KTN(KTa1-xNb)(0<x<1)、KLTN(K1-yLiyTa1-xNb)(0<x<1、0<y<1)のいずれでもよく、あるいはPLZT(ランタン添加チタン酸ジルコン酸鉛)等の他の材料であってもよい。 As a material for forming an optical element, a material that causes a paraelectric / ferroelectric phase transition and has an electro-optic effect depending on the composition and temperature, KTN (KTa 1-x Nb x O 3) (0 <x <1 ), KLTN (K 1-y Li y Ta 1-x Nb x O 3) (0 <x <1,0 <y <1) may be any of, or PLZT (lanthanum-added Other materials such as lead zirconate titanate) may be used.

また、本発明に係る光デバイスは、例えば、光スイッチや光変調器など、光素子の電気光学効果を利用する光デバイスである。したがって、光デバイスは、光素子を電気的に駆動する電極を備え、電気光学効果により通過する光の位相などの状態を変化させる領域(本明細書において、単に「動作領域」とも呼ぶ。)を有する。例えば、本発明の光デバイスが光スイッチや光変調器として実施された場合には、動作領域は位相変調部を指す。   The optical device according to the present invention is an optical device that utilizes the electro-optic effect of an optical element, such as an optical switch or an optical modulator. Therefore, the optical device includes an electrode that electrically drives the optical element, and a region that changes a state such as a phase of light that passes through the electro-optic effect (also simply referred to as an “operation region” in this specification). Have. For example, when the optical device of the present invention is implemented as an optical switch or an optical modulator, the operation region indicates a phase modulation unit.

本発明に係る光デバイスは、光素子内の動作領域を含む複数の領域(本明細書において、単に「場所」とも呼ぶ。)の温度をそれぞれ制御する。   The optical device according to the present invention controls the temperatures of a plurality of regions (also simply referred to as “location” in the present specification) including the operation region in the optical element.

本発明は、電気光学効果を有し、相転移温度で常誘電・強誘電相転移を起こす材料で形成された光素子を有する光デバイスであって、光素子の第1の場所の温度を調整する第1の温度調整手段と、光素子の第2の場所の温度を調整する第2の温度調整手段とを備える。この結果、第1の場所と第2の場所の相転移温度が相違する大きさの結晶の光素子を用いても、第1の場所と第2の場所の電気光学係数を最大かつ一様に制御することができ、光デバイスにおける電気光学効果の特性を均一にすることができる。   The present invention relates to an optical device having an optical element formed of a material having an electro-optic effect and causing a paraelectric / ferroelectric phase transition at a phase transition temperature, and adjusting a temperature at a first location of the optical element First temperature adjusting means for adjusting, and second temperature adjusting means for adjusting the temperature of the second location of the optical element. As a result, even if a crystal optical element having a size different in phase transition temperature between the first place and the second place is used, the electro-optic coefficient of the first place and the second place is maximized and uniform. The characteristics of the electro-optic effect in the optical device can be made uniform.

<実施の形態1>
図4に、本発明に係る光デバイスの実施形態を示す。本実施形態の光デバイスは、KTN材料を用いて導波路を形成した光素子1を挟むように、温度検知素子2−1および2−2と、温度調整素子8−1および8−2とが設けられている。温度検知素子2−1と温度調整素子8−1は、温度制御回路9−1に導線などを介して電気的に接続されている。どうように、温度検知素子2−2と温度調整素子8−2は、温度制御回路9−2に導線などを介して電気的に接続されている。
<Embodiment 1>
FIG. 4 shows an embodiment of an optical device according to the present invention. In the optical device of the present embodiment, the temperature detection elements 2-1 and 2-2 and the temperature adjustment elements 8-1 and 8-2 are arranged so as to sandwich the optical element 1 in which the waveguide is formed using the KTN material. Is provided. The temperature detection element 2-1 and the temperature adjustment element 8-1 are electrically connected to the temperature control circuit 9-1 via a conducting wire or the like. In this way, the temperature detection element 2-2 and the temperature adjustment element 8-2 are electrically connected to the temperature control circuit 9-2 via a lead wire or the like.

本実施形態では、温度検知素子2−1および2−2は、光素子1の2つの場所の温度を測定し、測定した温度に基づいて、光素子1の2つの場所の温度がそれぞれ調整される。温度制御回路9−1および9−2は、温度検知素子2−1および2−2で測定される温度があらかじめ定められた電気光学係数を示す温度で一定になるように、ペルチェ素子等の温度調整素子8−1および8−2を制御して光素子1の2つの場所の温度を一定に保持する。これによって、一定の電気光学効果が得られるように光素子1を制御することが可能になる。   In the present embodiment, the temperature detection elements 2-1 and 2-2 measure the temperatures of the two places of the optical element 1, and the temperatures of the two places of the optical element 1 are adjusted based on the measured temperatures. The The temperature control circuits 9-1 and 9-2 are arranged so that the temperature of the Peltier element is constant so that the temperature measured by the temperature detection elements 2-1 and 2-2 is constant at a temperature indicating a predetermined electro-optic coefficient. The adjusting elements 8-1 and 8-2 are controlled to keep the temperatures of the two locations of the optical element 1 constant. This makes it possible to control the optical element 1 so as to obtain a certain electro-optic effect.

本実施形態では、光素子の2つの場所について、あらかじめ電気光学係数と温度の関係を調べることによって、2つの場所における電気光学係数が同程度の値になる温度を求めておく。温度制御回路9−1および9−2は、それぞれの場所の温度があらかじめ求められた温度になるように、温度調整素子8−1および8−2を制御する。   In this embodiment, by examining the relationship between the electro-optic coefficient and the temperature in advance at two locations of the optical element, the temperature at which the electro-optic coefficient at the two locations is a similar value is obtained. The temperature control circuits 9-1 and 9-2 control the temperature adjustment elements 8-1 and 8-2 so that the temperatures at the respective locations are determined in advance.

図5に示すように、場所Aおよび場所Bについて電気光学係数と温度の関係を調べ、それぞれの場所において電気光学係数の値がRとなる温度TおよびTを求めておく。温度制御回路9−1および9−2は、温度検知素子2−1および2−2でそれぞれ測定される場所AおよびBの温度が、各々あらかじめ求められた温度TおよびTで一定に保持されるように、温度調整素子8−1および8−2をそれぞれ制御する。これにより、場所Aおよび場所Bの電気光学係数の値がRとなり、一様の電気光学効果を得ることができるようになる。 As shown in FIG. 5, for the location A and location B examines the electro-optic coefficient and temperature relationships, the value of the electro-optic coefficient is previously obtained temperature T A and T B to be R at each location. Temperature control circuit 9-1 and 9-2, the temperature of the location A and B are respectively measured by the temperature detecting element 2-1 and 2-2, held constant at each pre-determined temperatures T A and T B As described above, the temperature adjusting elements 8-1 and 8-2 are respectively controlled. As a result, the value of the electro-optic coefficient at location A and location B becomes R, and a uniform electro-optic effect can be obtained.

また、温度制御回路としては、アナログ制御回路、ディジタル制御回路のいずれでも良い。また、温度検知素子2から温度制御回路9に素子1の温度の情報を伝えるのは電圧および電流のようなアナログ信号あるいはディジタル信号などのいずれであってもよい。   The temperature control circuit may be either an analog control circuit or a digital control circuit. In addition, the temperature information of the element 1 may be transmitted from the temperature detecting element 2 to the temperature control circuit 9 by analog signals such as voltage and current or digital signals.

温度調整素子8としては、ペルチェ素子、薄膜ヒータ等のいずれかあるいはこれらを併用したものなど、光素子1の温度を調整できるものであればいずれでもよい。   The temperature adjusting element 8 may be any element that can adjust the temperature of the optical element 1, such as a Peltier element, a thin film heater, or a combination thereof.

本実施形態では光素子内の2つの場所の温度を制御しているが、必要に応じて3つ以上の場所の温度を制御してもよい。   In this embodiment, the temperature of two places in the optical element is controlled, but the temperature of three or more places may be controlled as necessary.

<実施の形態2>
図6に、本発明に係る光デバイスの別の実施形態を示す。本実施形態の光デバイスは、KTN材料を用いて導波路を形成した光素子1と、光素子1に設けられた電極5−1および6−1間の電気容量を測定する容量測定回路12−1と、光素子1に設けられた電極5−2および6−2間の電気容量を測定する容量測定回路12−2と、容量測定回路(12−1および12−2)によって測定された電気容量に基づいて、光素子1の温度を制御する温度制御回路9と、温度制御回路からの指示により光素子1の温度を調整する温度調整素子8−1および8−2とが設けられている。温度制御回路9は、容量測定回路(12−1および12−2)および温度調整素子(8−1および8−2)の各々と、電気的に接続されている。
<Embodiment 2>
FIG. 6 shows another embodiment of the optical device according to the present invention. The optical device according to this embodiment includes an optical element 1 in which a waveguide is formed using a KTN material, and a capacitance measuring circuit 12-that measures the electric capacity between electrodes 5-1 and 6-1 provided in the optical element 1. 1 and a capacitance measuring circuit 12-2 that measures the electric capacitance between the electrodes 5-2 and 6-2 provided in the optical element 1, and the electricity measured by the capacitance measuring circuits (12-1 and 12-2). A temperature control circuit 9 that controls the temperature of the optical element 1 based on the capacitance, and temperature adjustment elements 8-1 and 8-2 that adjust the temperature of the optical element 1 according to instructions from the temperature control circuit are provided. . The temperature control circuit 9 is electrically connected to each of the capacitance measuring circuits (12-1 and 12-2) and the temperature adjusting elements (8-1 and 8-2).

本実施形態では、光素子1の温度を検知する温度検知素子を用いる代わりに、容量測定回路(12−1および12−2)で光素子1の場所1および2の電気容量(つまり誘電率)を測定し、測定した電気容量に基づいて、光素子1の場所1および2の温度が調整される。温度制御回路9は、容量測定回路(12−1および12−2)でそれぞれ測定される場所1および2の電気容量が、各々あらかじめ定められた電気容量で一定になるように、温度調整素子(8−1および8−2)をそれぞれ制御して光素子1の場所1および2の温度を一定に保持する。これによって、一定の電気光学効果が得られるように光素子1を制御することが可能になる。   In this embodiment, instead of using the temperature detection element that detects the temperature of the optical element 1, the capacitance (that is, the dielectric constant) of the locations 1 and 2 of the optical element 1 is measured by the capacitance measurement circuit (12-1 and 12-2). And the temperatures of the locations 1 and 2 of the optical element 1 are adjusted based on the measured capacitance. The temperature control circuit 9 is configured so that the electric capacity of the places 1 and 2 measured by the capacitance measuring circuits (12-1 and 12-2) is constant at a predetermined electric capacity, respectively. 8-1 and 8-2) are controlled to keep the temperatures of the locations 1 and 2 of the optical element 1 constant. This makes it possible to control the optical element 1 so as to obtain a certain electro-optic effect.

図7(a)にKTN材料の電気光学係数の温度依存性を示し、図7(b)に電気容量の温度依存性の例を示す。電気光学係数は、誘電率に依存するために、電気容量と同様の温度依存性を有する。本発明の光デバイスは、光素子の温度を検知する代わりに、電気容量の温度依存性を利用する、すなわち、光素子の電気容量を測定し、測定した電気容量に基づいて、光素子の温度を制御する。   FIG. 7A shows the temperature dependence of the electro-optic coefficient of the KTN material, and FIG. 7B shows an example of the temperature dependence of the capacitance. Since the electro-optic coefficient depends on the dielectric constant, it has a temperature dependency similar to that of the electric capacity. The optical device of the present invention uses the temperature dependence of the capacitance instead of detecting the temperature of the optical device, that is, measures the capacitance of the optical device, and based on the measured capacitance, the temperature of the optical device. To control.

つまり、温度制御回路9が、測定される光素子1の場所1および2の電気容量が予め定められた値になるように、光素子の温度を制御することによって、光素子の電気光学係数を一定とすることができる。このようにすることで、光素子における材料の組成のばらつきにかかわらず、光デバイスの光電効果の特性を均一にすることができる。   That is, the temperature control circuit 9 controls the temperature of the optical element so that the electric capacitances of the locations 1 and 2 of the optical element 1 to be measured have a predetermined value, thereby reducing the electro-optic coefficient of the optical element. Can be constant. By doing in this way, the characteristic of the photoelectric effect of an optical device can be made uniform irrespective of the dispersion | variation in the composition of the material in an optical element.

本実施形態では、実施形態1で説明したように、あらかじめ光素子の複数の場所における電気光学係数と温度の関係を調べておく必要はなく、電気容量を一定に保持するような温度制御さえすればよい。   In the present embodiment, as described in the first embodiment, it is not necessary to investigate the relationship between the electro-optic coefficient and the temperature at a plurality of locations of the optical element in advance, and even temperature control that keeps the capacitance constant is performed. That's fine.

容量測定回路としては、ブリッジ測定、インピーダンス法、ネットワーク法などのさまざまな方法が知られているが、このいずれを用いるものであってもよい。   Various methods such as a bridge measurement, an impedance method, and a network method are known as the capacitance measurement circuit, and any of these may be used.

また、温度制御回路としては、アナログ制御回路、ディジタル制御回路のいずれでも良い。また、容量測定回路から温度制御回路に電気容量の情報を伝えるのは電圧および電流のようなアナログ信号あるいはディジタル信号などのいずれであってもよい。   The temperature control circuit may be either an analog control circuit or a digital control circuit. In addition, the capacitance information may be transmitted from the capacitance measuring circuit to the temperature control circuit by analog signals such as voltage and current or digital signals.

温度調整素子としては、ペルチェ素子、薄膜ヒータ等のいずれかあるいはこれらを併用したものなど、光素子1の温度を調整できるものであればいずれでもよい。   The temperature adjusting element may be any one that can adjust the temperature of the optical element 1, such as a Peltier element, a thin film heater, or a combination thereof.

また、容量測定回路は、電気的に電気容量を測定することができるため、サーミスタのような温度検知素子よりも早い応答を得ることができる。   Further, since the capacitance measuring circuit can electrically measure the capacitance, it can obtain a faster response than a temperature sensing element such as a thermistor.

本実施形態では光素子内の2つの場所の温度を制御しているが、必要に応じて3つ以上の場所の温度を制御してもよい。   In this embodiment, the temperature of two places in the optical element is controlled, but the temperature of three or more places may be controlled as necessary.

電気光学係数と温度の関係を示す図である。It is a figure which shows the relationship between an electro-optic coefficient and temperature. 従来技術光デバイスの構成図である。It is a block diagram of a prior art optical device. 電気光学係数の温度依存性のばらつきを示す図である。It is a figure which shows the dispersion | variation in the temperature dependence of an electro-optic coefficient. 本発明に係る光デバイスの実施形態を示す図である。It is a figure which shows embodiment of the optical device which concerns on this invention. 異なる場所における電気光学係数と温度の関係を示す図である。It is a figure which shows the relationship between the electro-optic coefficient and temperature in a different place. 本発明に係る光デバイスの実施形態を示す図である。It is a figure which shows embodiment of the optical device which concerns on this invention. (a)は電気光学係数と温度の関係を示す図、(b)は電気容量と温度の関係を示す図である。(A) is a figure which shows the relationship between an electro-optic coefficient and temperature, (b) is a figure which shows the relationship between an electrical capacitance and temperature.

符号の説明Explanation of symbols

1 光素子
2 温度検知素子
3 ペルチェ素子
4 温度制御回路
8 温度調整素子
9 温度制御回路
5、6 電極
12 容量測定回路
DESCRIPTION OF SYMBOLS 1 Optical element 2 Temperature detection element 3 Peltier element 4 Temperature control circuit 8 Temperature adjustment element 9 Temperature control circuit 5, 6 Electrode 12 Capacity measurement circuit

Claims (5)

電気光学効果を有し、相転移温度で常誘電・強誘電相転移を起こす材料で形成された光素子を有する光デバイスであって、
前記光素子の第1の場所の温度を調整する第1の温度調整手段と、
前記光素子の第2の場所の温度を調整する第2の温度調整手段と
を備えたことを特徴とする光デバイス。
An optical device having an optical element formed of a material having an electro-optic effect and causing a paraelectric / ferroelectric phase transition at a phase transition temperature,
First temperature adjusting means for adjusting the temperature of the first location of the optical element;
An optical device comprising: a second temperature adjusting means for adjusting a temperature at a second location of the optical element.
前記光素子の前記第1の場所の温度を測定する第1の温度測定手段と、
前記光素子の前記第2の場所の温度を測定する第2の温度測定手段と、
測定される前記第1の場所の温度が予め定められた第1の温度に保持するように前記第1の温度調整手段を制御する第1の温度制御手段と
測定される前記第2の場所の温度が予め定められた第2の温度に保持するように前記第2の温度調整手段を制御する第2の温度制御手段と
をさらに備えたことを特徴とする請求項1に記載の光デバイス。
First temperature measuring means for measuring the temperature of the first location of the optical element;
Second temperature measuring means for measuring the temperature of the second location of the optical element;
First temperature control means for controlling the first temperature adjusting means so that the temperature of the first place to be measured is maintained at a predetermined first temperature, and the second place to be measured. The optical device according to claim 1, further comprising: a second temperature control unit that controls the second temperature adjusting unit so that the temperature is maintained at a predetermined second temperature.
前記光素子の前記第1の場所の電気容量を測定する第1の容量測定手段と、
前記光素子の前記第2の場所の電気容量を測定する第2の容量測定手段と、
測定される前記第1の場所の電気容量が予め定められた第1の値となる温度に、前記第1の場所の温度を保持するように前記第1の温度調整手段を制御する第1の温度制御手段と
測定される前記第2の場所の電気容量が予め定められた第2の値となる温度に、前記第2の場所の温度を保持するように前記第2の温度調整手段を制御する第2の温度制御手段と
をさらに備えたことを特徴とする請求項1に記載の光デバイス。
First capacitance measuring means for measuring the capacitance of the first location of the optical element;
Second capacitance measuring means for measuring an electric capacitance at the second location of the optical element;
A first temperature control unit that controls the first temperature adjusting means to maintain the temperature of the first place at a temperature at which the electric capacity of the first place to be measured becomes a predetermined first value. The second temperature adjusting means is controlled so that the temperature of the second place is kept at a temperature at which the electric capacity of the second place to be measured and the second place is a predetermined second value. The optical device according to claim 1, further comprising: a second temperature control means.
前記材料は、KTa1-xNb3(0<x<1)であることを特徴とする請求項1ないし3のいずれかに記載の光デバイス。 The optical device according to claim 1, wherein the material is KTa 1-x Nb x O 3 (0 <x <1). 前記材料は、K1-yLiyTa1-xNb3(0<x<1、0<y<1)であることを特徴とする請求項1ないし3のいずれかに記載の光デバイス。
4. The light according to claim 1, wherein the material is K 1-y Li y Ta 1-x Nb x O 3 (0 <x <1, 0 <y <1). device.
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