JP2006351882A - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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Publication number
JP2006351882A
JP2006351882A JP2005176906A JP2005176906A JP2006351882A JP 2006351882 A JP2006351882 A JP 2006351882A JP 2005176906 A JP2005176906 A JP 2005176906A JP 2005176906 A JP2005176906 A JP 2005176906A JP 2006351882 A JP2006351882 A JP 2006351882A
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optical semiconductor
semiconductor device
substrate
light emitting
housing
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Japanese (ja)
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Takeshi Tsutsui
毅 筒井
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of obtaining stable emission efficiency while improving light emission efficiency by preventing a change in portion of full reflection and its ratio due to contact between a sealing member and a case or peeling of the contacting objects, because the small size of an optical semiconductor device itself makes microfabrication difficult and the sealing member may contact the case due to vibration or distortion or the contacting objects may be peeled off. <P>SOLUTION: In the optical semiconductor device, a substrate which has an opening around an optical semiconductor element gradually expanding from the substrate and is made of a translucent material is arranged on the substrate, a sealing section having a refractive index larger than that of the case is formed on the opening, and the case is closely bonded on the sealing section. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体発光素子を備える光半導体装置に関する。特に、表示用又は照明用の光源として利用する光半導体装置に関する。   The present invention relates to an optical semiconductor device including a semiconductor light emitting element. In particular, the present invention relates to an optical semiconductor device used as a light source for display or illumination.

従来の発光素子を備える光半導体装置は、カップ状部の中心に発光素子を備え、カップ状部との間に空間を形成しながら、カップ状部に光透過性の樹脂を充填していた（例えば、特許文献１参照。）。   A conventional optical semiconductor device including a light emitting element includes a light emitting element in the center of a cup-shaped portion, and fills the cup-shaped portion with a light-transmitting resin while forming a space between the cup-shaped portion ( For example, see Patent Document 1.)

従来の光半導体装置の構成例を図１に示す。図１において、８１は発光素子、８２は発光素子８１を覆う封止部材、８３はカップ状の筐体、８４は封止部材８２と筐体８３との間の空気層、８５は発光素子８１等を搭載する基板である。   A configuration example of a conventional optical semiconductor device is shown in FIG. In FIG. 1, 81 is a light emitting element, 82 is a sealing member that covers the light emitting element 81, 83 is a cup-shaped casing, 84 is an air layer between the sealing member 82 and the casing 83, and 85 is a light emitting element 81. Etc. is a substrate on which is mounted.

基板８５に筐体８３を配置してから、発光素子８１を搭載し、発光素子８１の電極と基板８５上の配線パターンとをリードで接続する。次に、封止部材８２を筐体８３との間に空気層８４が生じるように形成する。   After the housing 83 is arranged on the substrate 85, the light emitting element 81 is mounted, and the electrodes of the light emitting element 81 and the wiring pattern on the substrate 85 are connected by leads. Next, the sealing member 82 is formed so that an air layer 84 is generated between the sealing member 82 and the housing 83.

封止部材８２の屈折率は、空気の屈折率よりも大きいため、発光素子８１から発光した光は封止部材８２の側面で全反射されやすく、光半導体装置からの光の出射効率を高めることができる。   Since the refractive index of the sealing member 82 is larger than the refractive index of air, the light emitted from the light emitting element 81 is easily totally reflected by the side surface of the sealing member 82, and the light emission efficiency from the optical semiconductor device is increased. Can do.

特開２００２−２６１３３３号公報。JP 2002-261333 A.

しかし、光半導体装置自体の大きさが小さく微細加工が困難なため、振動や歪みにより封止部材８２と筐体８３とが接触したり、接触していたものが剥離したりすることがあった。封止部材８２と筐体８３とが接触したり、接触していたものが剥離したりすると、全反射する場所やその割合が変化するため、光の出射効率が変動するという課題を有している。   However, since the size of the optical semiconductor device itself is small and microfabrication is difficult, the sealing member 82 and the housing 83 may come into contact with each other due to vibration or distortion, or the things that were in contact may be peeled off. . When the sealing member 82 and the housing 83 are in contact with each other or the thing that has been in contact is peeled off, the total reflection location and the ratio thereof change, so that the light emission efficiency varies. Yes.

本発明は、光の出射効率を高めつつ、かつ、安定な出射効率を得ることのできる光半導体装置を提供することを目的とする。   An object of the present invention is to provide an optical semiconductor device capable of increasing the light emission efficiency and obtaining a stable light emission efficiency.

上記目的を達成するために、本発明は、基板上に光半導体素子を配置し、その光半導体素子の周りに、開口部が基板側から徐々に拡大し透光性の材料からなる筐体を配置し、筐体の開口部に、筐体よりも屈折率の大きい透光性の材料で封止部を形成し、筐体と封止部との間を密着させた光半導体装置である。   In order to achieve the above object, the present invention provides an optical semiconductor element disposed on a substrate, and a casing made of a translucent material with an opening gradually expanding from the substrate side around the optical semiconductor element. This is an optical semiconductor device in which a sealing part is formed of a light-transmitting material having a refractive index larger than that of the casing, and the casing and the sealing part are in close contact with each other in the opening of the casing.

具体的には、本発明は、基板の上面に配置された半導体発光素子と、前記基板側下部から上部に向けて漸次拡大する開口部が前記半導体発光素子の周囲を取り囲むように前記基板の上面に配置され、透光性の材料からなる筐体と、前記半導体発光素子を覆うように前記筐体の開口部に形成され、透光性の材料からなる封止部と、を備え、前記封止部の透光性の材料の屈折率が前記筐体の透光性の材料の屈折率よりも大きいことを特徴とする光半導体装置である。   Specifically, the present invention relates to a semiconductor light emitting device disposed on the upper surface of the substrate and an upper surface of the substrate such that an opening gradually expanding from the lower side toward the upper side surrounds the periphery of the semiconductor light emitting device. A housing made of a translucent material and a sealing portion formed in an opening of the housing so as to cover the semiconductor light emitting element and made of a translucent material. The optical semiconductor device is characterized in that the light-transmitting material of the stopper has a refractive index higher than that of the light-transmitting material of the casing.

本発明により、筐体の開口部はテーパ状になっており、また封止部の材料は筐体の材料よりも屈折率が大きいため、一定角度以上の入射角で封止部と筐体との界面に到達した光は全反射され、光半導体装置からの光の出射効率を高めることができる。さらに、筐体と封止部との間を密着させているため、安定な出射効率を得ることができる。   According to the present invention, the opening of the housing is tapered, and the material of the sealing portion has a higher refractive index than the material of the housing. The light reaching the interface is totally reflected, and the light emission efficiency from the optical semiconductor device can be increased. Furthermore, since the housing and the sealing portion are in close contact with each other, stable emission efficiency can be obtained.

本発明において、前記筐体の前記封止部に接する面が粗面加工されていることが好ましい。   In this invention, it is preferable that the surface which contact | connects the said sealing part of the said housing | casing is roughened.

本発明により、筐体と封止部との間の密着性が向上し、光半導体装置は安定な出射効率を得ることができる。   According to the present invention, the adhesion between the housing and the sealing portion is improved, and the optical semiconductor device can obtain stable emission efficiency.

本発明において、前記筐体に反射粒子が含まれていてもよい。   In the present invention, the casing may contain reflective particles.

本発明により、封止部から筐体に入射した光が、反射粒子によって筐体内で吸収されるため、光半導体装置からの出射パターンが一定となる。   According to the present invention, the light incident on the housing from the sealing portion is absorbed in the housing by the reflective particles, so that the emission pattern from the optical semiconductor device is constant.

本発明において、前記封止部に蛍光材料が添加されていてもよい。   In the present invention, a fluorescent material may be added to the sealing portion.

本発明により、半導体発光素子で発光した光が蛍光材料で波長変換され、光半導体装置の出射スペクトルを調整することができる。   According to the present invention, the wavelength of light emitted from the semiconductor light emitting element is converted by the fluorescent material, and the emission spectrum of the optical semiconductor device can be adjusted.

本発明により、光の出射効率を高めつつ、かつ、安定な出射効率を得ることのできる光半導体装置を提供することができる。   According to the present invention, it is possible to provide an optical semiconductor device capable of increasing the light emission efficiency and obtaining a stable light emission efficiency.

以下、本発明の実施形態について、図面を参照しながら詳細に説明する。なお、本発明は、以下に示す実施形態に限定されるものではない。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited to embodiment shown below.

本実施形態は、基板の上面に配置された半導体発光素子と、その基板の側である下部から上部に向けて漸次拡大する開口部が前記半導体発光素子の周囲を取り囲むように前記基板の上面に配置され、透光性の材料からなる筐体と、前記半導体発光素子を覆うように前記筐体の開口部に形成され、透光性の材料からなる封止部と、を備え、その封止部の透光性の材料の屈折率が前記筐体の透光性の材料の屈折率よりも大きいことを特徴とする光半導体装置である。   In the present embodiment, the semiconductor light emitting element disposed on the upper surface of the substrate and the opening gradually expanding from the lower part to the upper part on the substrate side surround the periphery of the semiconductor light emitting element. A housing made of a light-transmitting material and a sealing portion formed in the opening of the housing so as to cover the semiconductor light emitting element and made of a light-transmitting material. The optical semiconductor device is characterized in that the refractive index of the translucent material of the portion is larger than the refractive index of the translucent material of the casing.

本発明の光半導体装置の構成を図２及び図３で説明する。図２は、本発明の実施形態である光半導体装置の斜視図である。図３は図２の光半導体装置の断面図及び上面図である。図３（ａ）は図２の光半導体装置の斜視図において、Ａ−Ａ’線を含む、図２の基板１５に垂直な面での断面図であり、図３（ｂ）は図２の光半導体装置の上面図である。   The structure of the optical semiconductor device of the present invention will be described with reference to FIGS. FIG. 2 is a perspective view of an optical semiconductor device according to an embodiment of the present invention. 3 is a cross-sectional view and a top view of the optical semiconductor device of FIG. FIG. 3A is a perspective view of the optical semiconductor device of FIG. 2, and is a cross-sectional view taken along a plane AA ′ and perpendicular to the substrate 15 of FIG. 2, and FIG. It is a top view of an optical semiconductor device.

図２及び図３において、１０は光半導体装置、１１は半導体発光素子、１２は透光性の材料からなる封止部、１４は透光性の材料からなる筐体、１５は上面に半導体発光素子１１等を配置する基板、２１−１は半導体発光素子１１の電極と後述するリードフレーム２３−１とを接続するボンディングワイヤ、２１−２は半導体発光素子１１の電極と後述するリードフレーム２３−２とを接続するボンディングワイヤ、２３−１はボンディングワイヤ２１−１と後述するスルーホール２４−１内の配線とを接続するリードフレーム、２３−２はボンディングワイヤ２１−２とスルーホール２４−２内の配線とを接続するリードフレーム、２３−３はスルーホール２４−１内の配線に接続されるリードフレーム、２３−４はスルーホール２４−２内の配線に接続されるリードフレーム、２４−１及び２４−２はそれぞれ基板１５を貫通するスルーホールであって、その内壁が金属で被覆されて配線が形成されている。但し、図３（ｂ）において、封止部１２は省略している。   2 and 3, reference numeral 10 denotes an optical semiconductor device, 11 denotes a semiconductor light emitting element, 12 denotes a sealing portion made of a light transmissive material, 14 denotes a casing made of the light transmissive material, and 15 denotes semiconductor light emission on the upper surface. A substrate on which the element 11 and the like are arranged, 21-1 is a bonding wire for connecting an electrode of the semiconductor light emitting element 11 and a lead frame 23-1 described later, and 21-2 is an electrode of the semiconductor light emitting element 11 and a lead frame 23- described later. 2, a bonding wire 21-2, a lead frame for connecting the bonding wire 21-1 and a wiring in a through-hole 24-1 to be described later, and 23-2 a bonding wire 21-2 and a through-hole 24-2. A lead frame for connecting to the internal wiring, 23-3 is a lead frame connected to the wiring in the through hole 24-1, and 23-4 is a through hole 24-2. A lead frame connected to the wiring, 24-1 and 24-2 is a through hole through the substrate 15, respectively, interconnect the inner wall is coated with a metal is formed. However, the sealing part 12 is omitted in FIG.

基板１５は絶縁物で構成される。例えば、セラミックスやガラスエポキシである。   The substrate 15 is made of an insulator. For example, ceramic or glass epoxy.

基板１５の上面には半導体発光素子１１が配置され、ボンディングワイヤ２１−１及び２１−２で供給される電流により所定の波長で発光する。半導体発光素子としては、ＡｌｘＧａｙＩｎ１−ｘ−ｙＮ（０≦ｘ≦１、０≦ｙ≦１、０≦ｘ＋ｙ≦１）で表されるＩＩＩ族窒化物系化合物からなる窒化物系半導体発光素子が例示できる。半導体発光素子１１が例えばサファイア基板上に形成された半導体層を備える場合は、半導体発光素子１１を基板１５に直接搭載してもよいし、リードフレーム２３−１又は２３−２上に搭載してもよい。半導体発光素子１１が半導体基板上に形成された半導体層を備える場合は、ボンディングワイヤを削減するために、半導体発光素子１１をリードフレーム２３−１又は２３−２上に搭載することが好ましい。また、半導体発光素子１１が絶縁体上に形成された半導体層を備える場合でも、放熱性の向上のために、半導体発光素子１１をリードフレーム２３−１又は２３−２上に搭載することが好ましい。 The semiconductor light emitting element 11 is disposed on the upper surface of the substrate 15 and emits light at a predetermined wavelength by the current supplied by the bonding wires 21-1 and 21-2. As a semiconductor light emitting device, a nitride composed of a group III nitride compound represented by Al x Ga y In 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) A semiconductor light emitting element can be exemplified. When the semiconductor light emitting device 11 includes a semiconductor layer formed on, for example, a sapphire substrate, the semiconductor light emitting device 11 may be directly mounted on the substrate 15 or mounted on the lead frame 23-1 or 23-2. Also good. When the semiconductor light emitting element 11 includes a semiconductor layer formed on a semiconductor substrate, it is preferable to mount the semiconductor light emitting element 11 on the lead frame 23-1 or 23-2 in order to reduce bonding wires. Even when the semiconductor light emitting device 11 includes a semiconductor layer formed on an insulator, it is preferable to mount the semiconductor light emitting device 11 on the lead frame 23-1 or 23-2 in order to improve heat dissipation. .

基板１５の上面には、半導体発光素子１１を取り囲むように筐体１４が配置されている。筐体１４は、基板面から上部に向けて徐々に拡大するテーパ状の開口部を有し、半導体発光素子１１で発光した光を開口部の内側側面で基板上方方向に反射する。テーパは直線状ものでも、波線状のものでも、階段状のものでもよい。少なくとも筐体１４の開口部内側側面の一部が半導体発光素子１１からの光を基板上方方向に反射する面を有していればよい。   A housing 14 is disposed on the upper surface of the substrate 15 so as to surround the semiconductor light emitting element 11. The housing 14 has a tapered opening that gradually expands from the substrate surface toward the upper part, and reflects light emitted from the semiconductor light emitting element 11 toward the upper side of the substrate on the inner side surface of the opening. The taper may be linear, wavy, or stepped. It suffices that at least a part of the inner side surface of the opening of the housing 14 has a surface that reflects light from the semiconductor light emitting element 11 upward in the substrate.

図２では、筐体１４の開口部の基板１５に平行な断面は四角形としているが、四角形でなくとも、多角形や円形、楕円形でもよい。また、筐体１４は単一の材料、単一の構造でなくてもよい。複数の材料で構成したり、複数の構造物を組み合わせたりしてもよい。   In FIG. 2, the cross section of the opening of the housing 14 parallel to the substrate 15 is a square, but it may be a polygon, a circle, or an ellipse instead of a square. Moreover, the housing | casing 14 does not need to be a single material and a single structure. A plurality of materials may be used, or a plurality of structures may be combined.

筐体１４の封止部１２に接する面は、例えばサンドブラスト加工で粗面加工されていることが好ましい。筐体１４が粗面加工されていると、筐体１４と封止部１２との間の密着性が向上し、剥離を防止することができるため、後述する封止部１２と筐体１４との界面で生じる全反射が安定して発生する。安定して全反射が発生すると、光半導体装置１０は安定な出射効率を得ることができる。   The surface in contact with the sealing portion 12 of the housing 14 is preferably roughened by, for example, sandblasting. When the housing 14 is roughened, the adhesion between the housing 14 and the sealing portion 12 can be improved and peeling can be prevented. The total reflection that occurs at the interface is stably generated. When total reflection occurs stably, the optical semiconductor device 10 can obtain stable emission efficiency.

筐体１４の材料としては、透光性の材料であればよい。例えば、エポキシ樹脂が例示できる。筐体１４には反射粒子が含まれていることが好ましい。反射粒子として、例えば、銀やアルミニウム等の金属箔や金属粉を混入してもよい。白色系の液晶ポリマーを筐体材料としてもよい。筐体１４にこのような反射粒子が含まれていると、封止部１２から筐体１４に入射した光が、筐体１４内で吸収されるため、光半導体装置１０からの出射パターンに偏りがなく一定の形状となる。   The material of the housing 14 may be a light transmissive material. For example, an epoxy resin can be illustrated. The casing 14 preferably contains reflective particles. As the reflective particles, for example, a metal foil or metal powder such as silver or aluminum may be mixed. White liquid crystal polymer may be used as the housing material. When such a reflective particle is contained in the housing 14, light incident on the housing 14 from the sealing portion 12 is absorbed in the housing 14, so that it is biased toward the emission pattern from the optical semiconductor device 10. There is no constant shape.

基板１５の上面には、透光性の材料で筐体１４の開口部を埋め、半導体発光素子１１を覆うように封止部１２が形成されている。半導体発光素子１１から光を効率的に出射させるため、封止部１２の材料の屈折率は半導体発光素子１１の半導体層に近いことが好ましい。比較的屈折率が高く、加工の容易な材料として、例えば、ガラス、シリコーン樹脂、エポキシ樹脂、ＰＭＭＡ（ポリメチルメタクリレート）等が例示できる。   On the upper surface of the substrate 15, a sealing portion 12 is formed so as to fill the opening of the housing 14 with a translucent material and cover the semiconductor light emitting element 11. In order to efficiently emit light from the semiconductor light emitting element 11, the refractive index of the material of the sealing portion 12 is preferably close to the semiconductor layer of the semiconductor light emitting element 11. Examples of materials that have a relatively high refractive index and can be easily processed include glass, silicone resin, epoxy resin, and PMMA (polymethyl methacrylate).

封止部１２は単一の材料や単一の構成でなくともよい。複数の材料で構成したり、複数の構造物を組み合わせたりしてもよい。   The sealing portion 12 may not be a single material or a single configuration. A plurality of materials may be used, or a plurality of structures may be combined.

封止部１２の材料の屈折率は、筐体１４の材料の屈折率よりも大きく設定する。半導体発光素子１１からの光が封止部１２から筐体１４に入射する際に、封止部１２と筐体１４との界面で生じる全反射を利用することができるため、光半導体装置１０からの出射効率を高くすることができる。   The refractive index of the material of the sealing part 12 is set larger than the refractive index of the material of the housing 14. When light from the semiconductor light emitting element 11 enters the housing 14 from the sealing portion 12, total reflection generated at the interface between the sealing portion 12 and the housing 14 can be used. The emission efficiency can be increased.

また、封止部１２には蛍光材料が添加されていてもよい。蛍光材料は、半導体発光素子１１で発光する光の波長よりも小さいエネルギーギャップを有することにより、半導体発光素子１１で発光する光に反応して、長い波長の光に変換することができる。例えば、青色で発光する半導体発光素子からの光を、青色の補色に変換して両者を加法混色させることによって白色光としてもよいし、加法混色により種々のスペクトルの出射光とすることでもよい。   Further, a fluorescent material may be added to the sealing portion 12. Since the fluorescent material has an energy gap smaller than the wavelength of light emitted from the semiconductor light emitting device 11, the fluorescent material can be converted into light having a long wavelength in response to light emitted from the semiconductor light emitting device 11. For example, light from a semiconductor light emitting element that emits blue light may be converted into a complementary color of blue and additively mixed to produce white light, or additive light may be used to output light having various spectra.

基板１５には、スルーホール２４−１が設けられ、スルーホール２４−１の内壁を覆う金属の配線で基板１５上面のリードフレーム２３−１と基板下面のリードフレーム２３−３とを接続する。また、スルーホール２４−２が設けられ、スルーホール２４−２の内壁を覆う金属の配線で基板１５上面のリードフレーム２３−２と基板下面のリードフレーム２３−４とを接続する。このようなリードフレームで電極を光半導体装置１０の外に取り出すことによって、回路基板やフレキシブル配線基板上にフリップチップ接続をすることができる。   A through hole 24-1 is provided in the substrate 15, and the lead frame 23-1 on the upper surface of the substrate 15 and the lead frame 23-3 on the lower surface of the substrate 15 are connected by metal wiring that covers the inner wall of the through hole 24-1. Further, a through hole 24-2 is provided, and the lead frame 23-2 on the upper surface of the substrate 15 and the lead frame 23-4 on the lower surface of the substrate are connected by metal wiring covering the inner wall of the through hole 24-2. By taking the electrodes out of the optical semiconductor device 10 with such a lead frame, it is possible to perform flip-chip connection on a circuit board or a flexible wiring board.

本発明の光半導体装置１０の製造方法を説明する。図４（１）〜図４（４）は光半導体装置１０の製造方法を説明する図である。図４（１）〜図４（４）において、図２又は図３と同じ符号は同じ意味を表す。   A method for manufacturing the optical semiconductor device 10 of the present invention will be described. 4A to 4D are views for explaining a method for manufacturing the optical semiconductor device 10. 4 (1) to 4 (4), the same reference numerals as those in FIG. 2 or 3 represent the same meaning.

まず、複数の半導体発光素子１１を搭載することのできる基板１５に貫通するスルーホール２４を形成し、スルーホール２４の内壁を金属でメッキ等をすることによって、基板１５の上面と下面を結ぶ配線を形成する（図４（１））。基板１５の上面と下面には所定のパターンでリードフレーム２３−１、２３−２、２３−３及び２３−４を形成する（図４（１））。スルーホール２４の内壁の配線形成とリードフレーム２３−１、２３−２、２３−３及び２３−４の形成はどちらが先でもよい。   First, a through hole 24 penetrating the substrate 15 on which a plurality of semiconductor light emitting elements 11 can be mounted is formed, and an inner wall of the through hole 24 is plated with metal to connect the upper surface and the lower surface of the substrate 15. Is formed (FIG. 4 (1)). Lead frames 23-1, 23-2, 23-3 and 23-4 are formed in a predetermined pattern on the upper and lower surfaces of the substrate 15 (FIG. 4A). Either the wiring formation on the inner wall of the through hole 24 or the formation of the lead frames 23-1, 23-2, 23-3 and 23-4 may be performed first.

基板１５の上面に半導体発光素子１１をそれぞれ配置し、それぞれの半導体発光素子１１の電極とリードフレーム２３−１及び２３−２とをボンディングワイヤ２１−１及び２１−２でそれぞれ接続する。   The semiconductor light emitting elements 11 are respectively arranged on the upper surface of the substrate 15, and the electrodes of the respective semiconductor light emitting elements 11 and the lead frames 23-1 and 23-2 are connected by bonding wires 21-1 and 21-2, respectively.

次に、所定の形状の筐体１４を基板１５に搭載する（図４（２））。筐体１４は樹脂を型枠で硬化させたものでもよく、硬化させた樹脂を切削加工したものでもよい。筐体の開口部内側側面は、封止部１２との密着性を良くするために、例えばサンドブラスト加工により粗面加工しておいてもよい。   Next, the casing 14 having a predetermined shape is mounted on the substrate 15 (FIG. 4B). The casing 14 may be one obtained by curing a resin with a mold, or may be one obtained by cutting the cured resin. The inner side surface of the opening of the housing may be roughened by, for example, sandblasting in order to improve the adhesion with the sealing portion 12.

筐体１４の開口部の内部に封止部１２となる材料である、例えばＰＭＭＡを充填して硬化させる（図４（３））。熱硬化でも紫外線硬化でもよい。   For example, PMMA, which is a material that becomes the sealing portion 12, is filled in the opening of the housing 14 and cured (FIG. 4C). Thermal curing or ultraviolet curing may be used.

スルーホール２４を通る切断線で、各光半導体装置１０を切り出す（図４（４））。切り出しはレーザによる熱切断でも、ダイシングによる機械切断でもよい。スルーホール２４は孔方向で分断され、半割りになった内壁の配線が基板１５の両面のリードフレームを接続することなる。筐体１４は基板１５の切り出しの際に併せて切断してもよいし、図４（２）でそれぞれ分離された筐体１４を基板１５に搭載してもよい。   Each optical semiconductor device 10 is cut out by a cutting line passing through the through hole 24 (FIG. 4D). Cutting may be thermal cutting with a laser or mechanical cutting with dicing. The through hole 24 is divided in the hole direction, and the wiring on the inner wall which is divided in half connects the lead frames on both sides of the substrate 15. The housing 14 may be cut when the substrate 15 is cut out, or the housings 14 separated in FIG. 4B may be mounted on the substrate 15.

このような製造方法により、光の出射効率を高めつつ、かつ、安定な出射効率を得ることのできる光半導体装置を量産することができる。   With such a manufacturing method, it is possible to mass-produce an optical semiconductor device capable of increasing the light emission efficiency and obtaining a stable emission efficiency.

本発明の光半導体装置は、照明、通信、センサー、表示デバイスなどに搭載される光源として利用することができる。   The optical semiconductor device of the present invention can be used as a light source mounted on lighting, communication, sensors, display devices, and the like.

従来の光半導体装置の構成例を説明する図である。It is a figure explaining the structural example of the conventional optical semiconductor device. 本発明の実施形態であり光半導体装置の斜視図である。1 is a perspective view of an optical semiconductor device according to an embodiment of the present invention. （ａ）は図２の光半導体装置の斜視図において、Ａ−Ａ’線を含む、基板に垂直な面での断面図であり、（ｂ）は図２の光半導体装置の上面図である。2A is a perspective view of the optical semiconductor device of FIG. 2, which is a cross-sectional view taken along a plane AA ′, and is a top view of the optical semiconductor device of FIG. 2. . 光半導体装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of an optical semiconductor device.

符号の説明Explanation of symbols

１０ 光半導体装置
１１ 半導体発光素子
１２ 封止部
１４、８３ 筐体
１５、８５ 基板
２１−１、２１−２、ボンディングワイヤ
２３−１、２３−２、２３−３、２３−４ リードフレーム
２４、２４−１、２４−２ スルーホール
８１ 発光素子
８２ 封止材料
８３ 空気層 DESCRIPTION OF SYMBOLS 10 Optical semiconductor device 11 Semiconductor light emitting element 12 Sealing part 14, 83 Case 15, 85 Substrate 21-1, 21-2, Bonding wire 23-1, 23-2, 23-3, 23-4 Lead frame 24, 24-1, 24-2 Through-hole 81 Light-emitting element 82 Sealing material 83 Air layer

Claims (4)

基板の上面に配置された半導体発光素子と、
前記基板側下部から上部に向けて漸次拡大する開口部が前記半導体発光素子の周囲を取り囲むように前記基板の上面に配置され、透光性の材料からなる筐体と、
前記半導体発光素子を覆うように前記筐体の開口部に形成され、透光性の材料からなる封止部と、を備え、
前記封止部の透光性の材料の屈折率が前記筐体の透光性の材料の屈折率よりも大きいことを特徴とする光半導体装置。 A semiconductor light emitting device disposed on an upper surface of the substrate;
An opening gradually expanding from the lower part on the substrate side toward the upper part is disposed on the upper surface of the substrate so as to surround the periphery of the semiconductor light emitting element, and a housing made of a translucent material;
A sealing portion that is formed in the opening of the housing so as to cover the semiconductor light emitting element and is made of a light-transmitting material;
An optical semiconductor device, wherein a refractive index of a light-transmitting material of the sealing portion is larger than a refractive index of a light-transmitting material of the casing. 前記筐体の前記封止部に接する面が粗面加工されていることを特徴とする請求項１に記載の光半導体装置   2. The optical semiconductor device according to claim 1, wherein a surface of the casing that contacts the sealing portion is roughened. 前記筐体に反射粒子が含まれていることを特徴とする請求項１又は２に記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the housing contains reflective particles. 前記封止部に蛍光材料が添加されていることを特徴とする請求項１から３に記載のいずれかの光半導体装置。


4. The optical semiconductor device according to claim 1, wherein a fluorescent material is added to the sealing portion.


JP2005176906A 2005-06-16 2005-06-16 Optical semiconductor device Pending JP2006351882A (en)

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JP2011249751A (en) * 2010-05-26 2011-12-08 Intematix Technology Center Corp Led package structure
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