JP2006351314A - Top emission light-emitting display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To dissipate heat generated by an organic compound forming a top emission organic light-emitting display (OLED) and a TFT drive circuit, and to ensure moisture resistance for the organic compound and the like. <P>SOLUTION: At least the TFT drive circuit, a reflection anode, an organic light-emitting layer, and a transparent cathode are laminated to form a top emission organic light-emitting display (OLED). The top emission organic light-emitting display can fully dissipate the heat generated by the TFT drive circuit and the organic light-emitting layer, by using a substrate that includes a metal layer and an insulation layer and that does not have light transparency, and can fully ensure moisture resistance. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a substrate of a top emission type organic light emitting display.

Conventionally, an organic light emitting display (hereinafter referred to as OLED (Organic Light Emitting Display)) emits light by directing a direct current through an anode, a light emitting layer, etc., and a cathode sequentially formed on a glass substrate or a transparent plastic substrate and an organic film. Devices that enable multi-color display or full-color display are known.
Further, there are (1) a bottom emission type in which light is extracted from the substrate side and (2) a top emission type in which light is extracted from the side opposite to the substrate, depending on the structure for extracting light.

  As shown in FIG. 11, a conventional bottom emission type OLED has a structure in which an anode 21 which is a transparent electrode, a hole transport layer 7 made of an organic compound, a light emitting layer 8 made of an organic compound, an organic compound, on a glass substrate 20. There is a structure in which an electron transport layer 9 made of a compound, an electron injection layer 10 and a cathode 22 which is a metal electrode are sequentially laminated.

  In addition, a two-layer structure in which a light emitting layer 8 made of an organic compound and a hole transport layer 7 made of an organic compound are disposed between the anode 21 and the cathode 22, or between the cathode 21 and the anode 22. In addition, a three-layer structure in which an electron transport layer 9 made of an organic compound, a light emitting layer 8 made of an organic compound, and a hole transport layer 7 made of an organic compound are laminated is known.

Furthermore, referring to FIG. 11, it is also known that a hole injection layer is provided between the anode 21 and the hole transport layer 7 to improve luminous efficiency.
The hole transport layer 7 has a function of transporting holes from the anode 21 and a function of blocking electrons transported from the cathode 22, and the electron transport layer 9 has a function of transporting electrons from the cathode 22 and from the anode 21. It has a so-called double hetero structure having a function of blocking holes that have been transported.

  In these OLEDs, a glass substrate 20 is arranged outside the anode 21, and electrons injected from the cathode 22 and holes injected from the anode 21 are recombined in the light emitting layer 8 to form excitons. Then, light is generated in the process in which the exciton is radiation-inactivated, and this light is transmitted through the anode 21 and the glass substrate 20 and emitted to the outside. On the glass substrate, a TFT drive circuit 3 for driving the OLED is formed separately from the light emitting region.

  Conventional substrate materials include soda glass, quartz, and sapphire inorganic materials, and plastics such as polyethylene terephthalate, polyethylene-2,6-naphthalate, polycarbonate, polysaliphone, polyethersulfone, polysulfone, and polyethersulfone. Polyarylate, fluororesin, polypropylene, polyimide resin, and epoxy resin are known.

A transparent conductive material such as ITO (Indium Tin Oxide) or SnO 2 is used for the anode 21, but the electrical resistance value needs to be low in order to reduce power consumption and heat generation of the element.
For the cathode 22, a single-layer metal of Mg, Al, In, or Ag having a small work function or an alloy such as Al—Mg, Ag—Mg, Al—Li, or Mg—Ag is used.
The hole transport layer 7 is formed on the anode 21 and includes an aromatic tertiary amine derivative and a phthalocyanine derivative. In addition, a single layer structure or a multilayer structure of the above materials may be used.

  The light emitting layer 8 is formed on the hole transport layer 7 and is made of a light emitting material and a doping material added if necessary. The doping material is a material added to the light emitting layer in order to improve the light emission efficiency from the light emitting layer 8 and change the emission color. Examples of the light emitting material and the doping material include aluminum quinolinol complex, rubrene, quinacridone, rare earth complex, iridium complex, anthracene, various fluorescent dyes, and the like.

The electron transport layer 9 is formed on the light emitting layer 8, has an ability to efficiently transport electrons injected from the cathode 22, and has an excellent electron injection effect for the light emitting layer. Examples of the material include an aluminum quinolinol complex and a triazole complex.
The electron injection layer 10 has an ability to easily inject electrons efficiently from the cathode 22 and efficiently injects electrons into the electron transport layer 9. Examples of the material include alkali metals such as lithium, lithium fluoride, lithium oxide, and lithium complexes.

  In addition, when a plastic substrate is used to make a flexible display, the organic compound of the OLED is deteriorated by moisture transmitted through the plastic substrate, and thus it is necessary to improve moisture resistance as a substrate.

Conventionally, several techniques for improving the heat dissipation of the OLED have been proposed.
For example, Patent Document 1 proposes the use of a quartz substrate or a sapphire substrate, assuming that the thermal conductivity of a substrate having optical transparency exceeds 0.75 (W / m · deg).

  Patent Document 2 proposes a technique for improving the thermal conductivity of a glass substrate by adding a metal oxide having good thermal conductivity to the glass substrate. Patent Document 3 proposes a structure in which a heat conductive layer having a higher thermal conductivity than that of the substrate is provided on at least one of the surface and the inside of the substrate having transparency. Patent Document 3 proposes a technique of covering a plastic substrate with a heat dissipation layer made of a material having a thermal conductivity higher than that of the substrate. Patent Documents 5 and 6 propose techniques for providing a heat dissipation layer on the cathode of an organic EL element. Non-Patent Document 1 describes a technique for forming a silicon nitride oxide film on a plastic substrate to achieve moisture resistance and transparency.

On the other hand, Patent Document 7 includes a screen unit and a circuit unit for driving the screen unit as an organic electroluminescence display device having good flexibility and durability, and the screen unit is formed on a film-like metal substrate. There has been proposed a display device capable of being wound and having a directly formed organic electroluminescent element and a wiring connecting the organic electroluminescent element and a circuit unit. A circuit portion such as a drive circuit is not formed on the screen portion, but a predetermined one end portion of the screen portion, specifically, a luminance signal circuit, for example, on one end portion parallel to the stripe formed by the first electrode, Circuits such as a scanning circuit and a power supply circuit are arranged along the one side described above.
Japanese Patent Laid-Open No. 10-144468 JP-A-5-129082 Japanese Patent Laid-Open No. 2001-237063 JP 2002-63985 A Japanese Unexamined Patent Publication No. 7-111192 JP-A-10-2755681 JP 2002-15859 A "Organic Light Emitting Devices on Polymer Film Substrate", Proceedings of The 10th International Works on Inorganic and Organic EL's, (Microelectronics), Proceedings of The 10th. 365-366, 2000

In a conventional OLED formed on a glass substrate or a plastic substrate, since the thermal conductivity of the substrate is low, even if a heat dissipation layer is formed adjacent to the substrate, the organic light emitting layer and other organic compounds and the drive circuit It is difficult to obtain sufficient heat radiation that is practical to the ambient air atmosphere.
The emission brightness of OLEDs increases in proportion to the injection current density, and has the ability to realize emission brightness of 10,000 (cd / m2) or more in a large area. Since deployment is also possible, heat dissipation measures are the most important issue.
Due to the heat generated by the light emission and the heat generated by the drive current, the organic compound constituting the OLED undergoes physicochemical irreversible changes such as oxidation, aggregation, and crystallization, resulting in a decrease in the light emission lifetime.

  In addition, since driving elements such as TFTs use low-temperature polysilicon or amorphous silicon, the threshold voltage fluctuates due to heat generation. Further, the organic compound constituting the OLED is a semiconductor, and the resistance is lowered due to a temperature rise at the time of initial use, resulting in an increase in luminance. Since the temperature characteristics are different for each of R, G, and B, it is necessary to suppress the temperature rise due to heat generation as much as possible.

  In order to use an OLED in a flexible manner, application of a plastic film substrate or the like has been studied. However, as described above, a plastic film has a low thermal conductivity and cannot provide a sufficient heat dissipation effect. Furthermore, since the plastic film substrate has low moisture resistance, moisture, oxygen, and alkali mobile ions that have entered from the plastic film substrate deteriorate the characteristics of the organic compound that constitutes the OLED, and also cause malfunctions in driving elements such as TFTs. Therefore, it is necessary to eliminate the entry of moisture, oxygen and alkali mobile ions as much as possible.

  In a top emission type OLED using a film-like metal substrate in which a drive circuit or the like is not formed on the screen portion, active matrix type driving is impossible and passive type driving is performed. The passive type drive is clearly inferior to the active matrix type drive in terms of power consumption and image quality. Therefore, an OLED in which a drive circuit or the like is formed on the screen portion that can perform the active matrix type drive is necessary.

  The present invention is for solving the above-described problems, and in an active matrix driving top emission type OLED in which a driving circuit or the like is formed on a screen portion, heat generated from an organic compound constituting the OLED and a TFT driving circuit or the like is generated. An object of the present invention is to provide an OLED having a substrate that rapidly dissipates heat and prevents the ingress of moisture, oxygen, and alkali mobile ions.

The present invention has been made in view of such conventional problems,
A driving circuit, a reflective electrode, a light emitting layer, and a transparent cathode are laminated on a substrate, and the substrate proposes a top emission type OLED composed of a metal layer and an insulating layer having no light transmittance.
The drive circuit is disposed between the substrate and the reflective electrode at a position overlapping the light emitting region of the organic light emitting layer.

  By using a metal layer for the substrate, the thermal conductivity can be increased by 100 times or more than glass or plastic, and a sufficient heat dissipation effect can be obtained. The insulating layer is provided to insulate the planar TFT driving circuit to be formed later from the metal layer.

  As the insulating film, a single layer film or a multilayer film such as SiOx, SiNx, SiOxNy, AlNx, AlOx or the like is used. The insulating layer may include at least an anodized layer of the metal layer. Anodization is an electrochemical technique, but it can produce a defect-free, large-area thin film required for flat display applications. The surface of the metal plate or metal film may be anodized, and a single-layer film or multilayer insulating film such as SiOx, SiNx, SiOxNy, AlNx, or AlOx may be formed thereon.

  The metal layer of the substrate may basically be an inexpensive and harmless metal, and may be a single material such as Al, Zn, W, Cu, Ni, Fe, and stainless steel, or an alloy or composite material thereof. Among them, Al is suitable for weight reduction and has a thermal conductivity of about 236 (W / m · K), which is the second largest after Ag and Cu, and is suitable for a heat dissipation material. As the Al alloy, an alloy containing Al as a main component and at least one additive of Cu, Pd, Nd, Ti, Si, Mg, and Mn is suitable. By adding at least one of Cu, Pd, Nd, Ti, Si, Mg, and Mn to Al, resistance to breakage (that is, stress migration) against stress is improved, which is important in achieving flexibility. Moreover, since it is hard to oxidize, a weather resistance also improves.

  Providing irregularities on the surface of the metal layer opposite to the side where the insulating layer is present is effective for heat dissipation. By providing irregularities on the surface of the metal layer, the area of the metal surface is increased, so that the contact area with the ambient air atmosphere is increased and heat dissipation is facilitated. In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided.

  Concavities and convexities on the metal surface can be obtained by physical means such as making cuts in the metal layer, or making the thickness of the metal layer where pressure is applied partially thinner than that where no other pressure is applied. It is also possible to produce by chemical means in which a mask is provided in a part on the metal surface and etching is performed, and the thickness of the metal layer in the part other than the mask is reduced. The length of the unevenness is not particularly limited, but it is necessary to make it smaller than the thickness of the metal layer, and it is preferable to make it longer than the surface roughness of a conventionally used glass substrate. In the TFT drive circuit region, it is preferable to increase the surface area for dissipating heat from the TFT drive circuit by reducing the interval between the concave and convex portions.

  If the thickness of the insulating layer corresponding to the area of at least a part of the TFT drive circuit region is made thinner than the thickness of the insulating layer corresponding to other regions, it is effective for heat dissipation in the TFT drive circuit region. By reducing the thickness of the insulating layer, the heat generated from the TFT drive circuit region generated by the drive current or the like is quickly transmitted to the metal layer, thereby increasing the heat dissipation effect. Since the TFT is manufactured using low-temperature polysilicon or amorphous silicon, the threshold voltage of the current-voltage characteristic is likely to vary depending on the temperature. In particular, since amorphous silicon greatly varies with temperature, it is necessary to suppress temperature variation as much as possible.

  Further, since the metal layer is used as the substrate, it is easy to achieve flexibility by reducing the thickness of the metal layer. Since it is easier to prevent the ingress of moisture, oxygen and alkali mobile ions than using a plastic film as a substrate, it is possible to suppress deterioration of organic compounds, metal wirings and TFTs constituting the OLED. .

  Since the present invention is configured as described above, the heat generated from the organic compound constituting the OLED, the TFT driving circuit, etc. is passed through the non-light transmissive substrate including the metal layer and the insulating layer, into the ambient air or the metal surface layer. It can dissipate heat to the pressure sensitive adhesive or pressure sensitive adhesive sheet or protective film, and can sufficiently prevent moisture, oxygen and alkali mobile ions from entering. An OLED can be provided.

  In the top emission type, a driver circuit including a TFT (Thin Film Transistor) or the like can be formed in the substrate, so that a multi-functional element can be realized, and a driver circuit including light emitted from the OLED element includes a TFT or the like. Therefore, there is an advantage that the aperture ratio can be increased as compared with the bottom emission type.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[Embodiment 1]
FIG. 1 is a schematic cross-sectional view of an OLED showing Embodiment 1 of the present invention.
An Al layer 1 (thermal conductivity 236 W / m · K) having a thickness of about 1 mm is anodized to form an insulating layer 2 having a thickness of about 100 nm with Al 2 O 3. The substrate 12 is made of the Al layer 1 and the insulating layer 2.

  A groove having a depth of about 0.3 mm is formed on the surface of the Al layer 1. Anodization was performed as follows. As the chemical conversion liquid, a 3 wt% tartaric acid aqueous solution was neutralized with aqueous ammonia to PH 6.5 to 7.0, and further ethylene glycol was mixed at a volume ratio of 9 times. Oxidation is performed by passing a conversion current using the Al layer 1 as the anode and the Pt electrode as the cathode. The formation current density was about 12 μA / cm 2 and the formation voltage was 8V.

  After the insulating layer 2 is formed, a TFT drive circuit 3 and a planarizing film 4 are formed. On the flattening film 4, Al as the anode (reflecting electrode) 5 is 100 nm thick, the arylamine is 50 nm thick as the hole injection layer 6, and α-naphthylphenyldiamine is 50 nm thick as the hole transport layer 7, The light emitting layer 8 was made of 80 nm thick trisaluminum, the electron transport layer 9 was made 50 nm thick aluminum quinolinol complex, the electron injection layer 10 was made 10 nm thick LiF, and the cathode (transparent electrode) 11 was made 120 nm thick ITO.

ITO was formed by laser ablation, and the others were formed by vacuum deposition. In vacuum deposition, a molybdenum boat is installed below the substrate installed above the vacuum apparatus, and deposition is started when the degree of vacuum reaches 5 × 10 −5 Pa, at a rate of 0.3 nm / sec. A film was formed. The substrate temperature was 50 ° C. or lower.
Laser ablation was performed by evacuating to a vacuum degree of 5 × 10 −5 Pa and then irradiating the ITO target with a CO 2 gas laser to form a film at a rate of 2 nm / sec.
After that, although omitted in FIG. 1, it was sealed with an ultraviolet curable epoxy resin. A direct current voltage is applied to the anode 5 and the cathode 11 by the TFT drive circuit 3, and current is injected to cause the light emitting layer 8 to emit light.

  Al, which is the metal layer 1 of the substrate 12, has a thermal conductivity of 236 (W / m · K), and the conventional glass has a thermal conductivity of 0.55 to 0.75 (W / m · K). Since the thermal conductivity is about 300 times or more, the heat generated in the OLED can be efficiently transmitted to the outside air to dissipate heat, and the temperature rise of the OLED can be suppressed.

  Further, since the density of Al is 2.7 (g / cm 3) and the glass is 2.6 (g / cm 3), the same thickness can be produced with almost the same weight. By making the substrate a metal layer, it becomes possible to easily make the substrate flexible, which is impossible with glass.

  FIG. 12 shows Table 1 that describes the innocuous main metals and the thermal conductivity and density of glass and polycarbonate.

The main metals shown in Table 1 of FIG. 12 are all significantly higher in thermal conductivity than glass and polycarbonate (plastics), and the heat dissipation effect can be enhanced by using the substrate for the metal layer.
However, since Cu, Zn, W, Ni, Fe, and Ge are easily oxidized, a surface treatment or protective film for preventing oxidation is provided on the surface of the metal layer (the side opposite to the OLED side of the metal layer in FIG. 1), or Therefore, it is necessary to make an alloy having an antioxidant effect.
Considering weight reduction of the substrate, Al is more preferable because of its high conductivity and low density.

  Al alone or an Al alloy may be used. By using an alloy containing at least one additive of Cu, Pd, Nd, Ti, Si, Mg, and Mn in Al, stress resistance, corrosion resistance, and the like increase, which is preferable. The TFT drive circuit 3 is formed in the screen portion (precisely in the pixel portion) by planar technology or organic semiconductor technology.

  In Example 1 of the present invention, an uneven portion for dissipating heat from the light emitting layer 8 and the TFT drive circuit 3 on the side of the metal layer 1 opposite to the side where the light emitting layer 8 and the TFT drive circuit 3 are arranged. Form.

  Although a groove having a depth of about 0.3 mm is provided on the surface of the Al layer 1, since the area of the metal surface is increased by providing the groove, the contact area with the ambient air atmosphere is increased and heat radiation is facilitated. In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided.

  The depth of the groove is not necessarily limited to about 0.3 mm in the present embodiment, and may be less than about 1 mm of the thickness of the metal layer 1, and may be 0.1 mm or 0.8 mm. The shape of the groove is not limited to the present embodiment, and may be a wedge shape, a square shape, a circular shape, a semicircular shape, or the like.

For comparison with Example 1 described in FIG. 1, FIG. 2 shows a comparative example of a top emission type OLED structure using a glass substrate 20.
In the comparative example, in the top emission type OLED, the TFT drive circuit 3 is formed on the glass substrate 20, the planarization layer 4 is planarized, and the OLED element is formed on the planarization layer 4.
The OLED element is formed by sequentially stacking an anode (reflecting electrode) 5, a hole injection layer 6, a hole transport layer 7, a light emitting layer 8, an electron transport layer 9, an electron injection layer 10, and a cathode (transparent electrode) 11. In order to radiate the light from the light emitting layer 8 toward the cathode 11, the cathode 11 needs to be a transparent electrode.
The anode 5 is a reflective electrode, and has a function of reflecting light reaching the anode 5 from the light emitting layer 8 and returning it to the cathode side.

  Among the organic compounds used in the hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer constituting the OLED, the organic compound is aggregated or crystallized at about 100 ° C. There is also a material that deteriorates characteristics (which is a film). When the injection current density is increased in order to achieve high luminance, there is a problem that the organic compound generates heat and the characteristics of the OLED deteriorate.

  Further, when an image is displayed on the OLED at room temperature, when the luminance signal level exceeds a certain level, the luminance increases as the temperature of the element rises with the lapse of time, and it takes one hour or more to stabilize. . In addition, there is a problem that when the luminance level is set for each of R, G, and B and the color is set, the color changes with the elapsed time. When the color is set to white, there is a problem that the color temperature changes significantly with the elapsed time. It was assumed that the luminance changes in R, G, and B were significantly different depending on the temperature change of the element with respect to the initially set luminance signal level.

FIG. 3 and FIG. 4 show the results of studies on changes in luminance and temperature over time during initial light emission in Example 1 of the present invention shown in FIG. 1 and the OLED of the comparative example shown in FIG.
In Example 1 of the present invention, an Al metal layer 1 (groove) in which an Al metal layer 1 (thermal conductivity 236 W / m · K) having a thickness of 1 mm is formed by anodizing Al 2 O 3 to form an insulating layer 2 having a thickness of about 100 nm. And a substrate 12 made of an Al2O3 insulating layer 2 is used.
On the other hand, in the comparative example shown in FIG. 2, a plate having a thickness of 1 mm made of conventional glass is used as the substrate 20.

  The element of OLED is composed of three colors of R, G, and B. A 2.5-inch QVGA high-definition display is manufactured, and a 100% luminance signal is input to the R, G, and B drive circuit. Comparison was performed by emitting white light of about 1/10 of the panel area).

FIG. 3 shows the change in luminance with respect to the elapsed time after the start of lighting in the case of using a substrate (hereinafter referred to as an Al substrate) composed of the Al metal layer 1 (with groove formation) and the Al 2 O 3 insulating layer 2 (hereinafter referred to as an Al substrate) and a glass substrate. Show. The initial luminance is about 334 (cd / m 2) in both cases.
In the case of using a glass substrate, the luminance rapidly increased immediately after lighting, stabilized at a constant luminance of about 390 (cd / m 2) after about 40 minutes, and was stable until 120 minutes. On the other hand, when the Al substrate was used, the luminance gradually increased immediately after lighting, but after about 25 minutes, the luminance was stabilized at a constant luminance of about 337 (cd / m 2) and was stable until 120 minutes.
When a glass substrate was used, the luminance increased by about 17%, but by using an Al substrate, it was possible to suppress an increase in luminance of 0.9%.

FIG. 4 shows the result of measuring the temperature change when the panel is turned on with a radiation thermometer. The initial temperature is about 23 (° C.) at room temperature in both cases.
As shown in FIG. 4, when a glass substrate was used, the temperature rose immediately after lighting, stabilized at about 40 (° C.) with a constant luminance after about 40 minutes, and was stable until 120 minutes.
On the other hand, when the Al substrate was used, the temperature gradually increased immediately after the lighting, but after 25 minutes, it was stabilized at a constant temperature of about 24 (° C.) and was stable until 120 minutes.

As can be seen from FIGS. 3 and 4, since the correlation between the increase in luminance immediately after lighting and the increase in temperature is high, it can be inferred that the main cause of the increase in luminance is the increase in temperature of the panel. In the comparison, the same luminance signal was input to the R, G, and B elements and turned on in white. Actually, however, the luminance signal gradation is changed for each of R, G, and B to express the color. , R, G, B temperature always fluctuate, and the luminance change characteristics with respect to the temperature are different for each R, G, B, so that heat dissipation measures should be taken, and the set color should not suppress the temperature rise. It will fluctuate due to temperature fluctuations, resulting in undesirable results.
In Example 1 of the present invention shown in FIG. 1, an Al metal layer 1 (thermal conductivity 236 W / m · K) having a thickness of 1 mm is formed by anodizing Al 2 O 3 to form an insulating layer 2 having a thickness of about 100 nm. The substrate 12 made of the metal layer 1 (with groove formation) and the Al 2 O 3 insulating layer 2 was used, and the luminance and temperature with respect to the elapsed time after the start of lighting were stably changed.

  FIG. 5 shows a second embodiment of the present invention. In Example 2 of the present invention, an OLED using a substrate 12 composed of an Al-0.5 wt% Pd metal layer 1 and a SiO2 insulating layer 23 is provided.

  FIG. 5 is a schematic cross-sectional view of an OLED according to Example 2 of the present invention. A SiO 2 insulating layer 23 with a thickness of about 100 nm is formed by sputtering on an Al-0.5 wt% Pd metal layer 1 (with a thermal conductivity of about 236 W / m · K) having a thickness of 0.3 mm. A groove having a depth of about 0.1 mm is formed on the surface of the Al-0.5 wt% Pd layer 1.

The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm.
After forming the insulating layer 23, the TFT drive circuit 3 and the planarizing film 4 are formed.
On the flattening film 4, Al as the anode (reflecting electrode) 5 is 100 nm thick, the arylamine is 50 nm thick as the hole injection layer 6, and α-naphthylphenyldiamine is 50 nm thick as the hole transport layer 7, The light emitting layer 8 was made of 80 nm thick trisaluminum, the electron transport layer 9 was made 50 nm thick aluminum quinolinol complex, the electron injection layer 10 was made 10 nm thick LiF, and the cathode (transparent electrode) 11 was made 120 nm thick ITO.

  SiO2 was formed by sputtering, ITO was formed by laser ablation, and the others were formed by vacuum deposition. In vacuum deposition, a molybdenum boat is installed below the substrate installed above the vacuum apparatus, and deposition is started when the degree of vacuum reaches 5 × 10 −5 Pa, at a rate of 0.3 nm / sec. A film was formed. The substrate temperature was 50 ° C. or lower. Laser ablation was performed by evacuating to a vacuum degree of 5 × 10 −5 Pa and then irradiating the ITO target with a CO 2 gas laser to form a film at a rate of 2 nm / sec. Sputtering was performed after evacuation to a vacuum degree of 1 × 10 −5 Pa, using a SiO 2 target, introducing Ar-10% O 2 gas, supplying 13.5 MHz AC power 500 W, and forming a film at a rate of 2 nm / sec. .

After that, although omitted in FIG. 5, it was sealed with an ultraviolet curable epoxy resin. A direct current voltage is applied to the anode 5 and the cathode 11 by the TFT drive circuit 3, and current is injected to cause the light emitting layer 8 to emit light.
Al-0.5 wt% Pd, which is the metal layer 1 of the substrate 12, has a thermal conductivity of about 236 (W / m · K), and conventional glass has a thermal conductivity of 0.55 to 0.75 (W / m m · K), it has a thermal conductivity of about 300 times or more. Therefore, the heat generated in the OLED can be efficiently transferred to the outside air to dissipate heat, and the temperature rise of the OLED can be suppressed. .

A groove with a depth of about 0.1 mm was provided on the surface of the Al-0.5 wt% Pd layer 1, but the area of the metal surface increased by providing the groove, so the contact area with the ambient air atmosphere increased. It becomes easy to dissipate heat. In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided.
The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm. Since the heat generation of the TFT drive circuit 3 is quickly transmitted to the Al-0.5 wt% Pd layer 1 by making the thickness thin, it is possible to suppress the temperature rise of the TFT drive circuit 3.

  By adding Pd to Al, stress resistance and corrosion resistance can be improved, and the thickness can be reduced to 0.3 mm to achieve flexibility. The TFT drive circuit 3 is formed in the screen part (precisely in the pixel part) by the planar technique or the organic semiconductor technique.

  FIG. 6 shows a third embodiment of the present invention. In Example 3 of the present invention, an OLED using an Al-1 wt% Si-0.5 wt% Cu metal layer 1 and a substrate 12 comprising an Al2O3 insulating layer 2 and an SiO2 insulating layer 23 by anodic oxidation is provided.

FIG. 6 is a schematic cross-sectional view of an OLED according to Example 3 of the present invention.
An insulating layer 2 having a thickness of about 150 nm is formed of Al2O3 by anodic oxidation of an Al-1 wt% Si-0.5 wt% Cu metal layer 1 (thermal conductivity is about 236 W / m · K) having a thickness of 0.1 mm.
Anodization was performed as follows. As the chemical conversion liquid, a 3 wt% tartaric acid aqueous solution was neutralized with aqueous ammonia to PH 6.5 to 7.0, and further ethylene glycol was mixed at a volume ratio of 9 times. Oxidation is performed by passing a conversion current with the Al-1 wt% Si-0.5 wt% Cu metal layer 1 as the anode and the Pt electrode as the cathode. The formation current density was about 60 μA / cm 2 and the formation voltage was about 10V.

After forming the insulating layer 2, a SiO2 insulating layer 23 having a thickness of about 100 nm is formed by sputtering.
A groove having a depth of about 0.02 mm is formed on the surface of the Al-1 wt% Si-0.5 wt% Cu layer 1. The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm.

A TFT drive circuit 3 and a planarizing film 4 are formed on the insulating layer 23. On the flattening film 4, Al as the anode (reflecting electrode) 5 is 100 nm thick, the arylamine is 50 nm thick as the hole injection layer 6, and α-naphthylphenyldiamine is 50 nm thick as the hole transport layer 7, As the light emitting layer 8, tris aluminum was formed to a thickness of 80 nm, the electron transport layer 9 was formed from an aluminum quinolinol complex to a thickness of 50 nm, the electron injection layer 10 was formed from a LiF layer having a thickness of 10 nm, and the cathode (transparent electrode) 11 was formed from ITO to a thickness of 120 nm. SiO2 was formed by sputtering, ITO was formed by laser ablation, and the others were formed by vacuum deposition.
In vacuum deposition, a molybdenum boat is installed below the substrate installed above the vacuum apparatus, and deposition is started when the degree of vacuum reaches 5 × 10 −5 Pa, at a rate of 0.3 nm / sec. A film was formed. The substrate temperature was 50 ° C. or lower.
Laser ablation was performed by evacuating to a vacuum degree of 5 × 10 −5 Pa and then irradiating the ITO target with a CO 2 gas laser to form a film at a rate of 2 nm / sec. Sputtering was performed after evacuation to a vacuum degree of 1 × 10 −5 Pa, using a SiO 2 target, introducing Ar-10% O 2 gas, supplying 13.5 MHz AC power 500 W, and forming a film at a rate of 2 nm / sec. .

After that, although omitted in FIG. 6, it was sealed with an ultraviolet curable epoxy resin. A direct current voltage is applied to the anode 5 and the cathode 11 by the TFT drive circuit 3, and current is injected to cause the light emitting layer 8 to emit light.
Al-1 wt% Si-0.5 wt% Cu which is the metal layer 1 of the substrate 12 has a thermal conductivity of about 236 (W / m · K), and the conventional glass has a thermal conductivity of 0.55 to 0. Because it has 75 (W / m · K), it has a thermal conductivity of about 300 times or more, so the heat generated in the OLED can be efficiently transferred to the outside air to dissipate and suppress the temperature rise of the OLED. Is possible.

  A groove having a depth of about 0.02 mm is provided on the surface of the Al-1 wt% Si-0.5 wt% Cu layer 1, but the area of the metal surface is increased by providing the groove. The contact area increases and heat dissipation becomes easier. In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided.

The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm. Since the heat generation of the TFT drive circuit 3 is quickly transmitted to the Al-1 wt% Si-0.5 wt% Cu layer 1 by reducing the thickness, the temperature increase of the TFT drive circuit 3 can be suppressed.
By adding Si and Cu to Al, the stress resistance and the corrosion resistance are improved, and the thickness can be reduced to 0.1 mm to achieve flexibility. The TFT drive circuit 3 is formed in the screen portion (precisely in the pixel portion) by planar technology or organic semiconductor technology.

  FIG. 7 shows a fourth embodiment of the present invention. In Example 4 of the present invention, an OLED using a substrate 12 composed of an Al-0.5 wt% Pd metal layer 1 and a SiO2 insulating layer 23 is provided.

  FIG. 7 is a schematic cross-sectional view of an OLED according to Example 4 of the present invention. A SiO 2 insulating layer 23 with a thickness of about 100 nm is formed by sputtering on an Al-0.5 wt% Pd metal layer 1 (with a thermal conductivity of about 236 W / m · K) having a thickness of 0.3 mm. A groove having a depth of about 0.1 mm is formed on the surface of the Al-0.5 wt% Pd layer 1.

The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm.
After forming the insulating layer 23, the TFT drive circuit 3 and the planarizing film 4 are formed.
On the flattening film 4, Al as the anode (reflecting electrode) 5 is 100 nm thick, the arylamine is 50 nm thick as the hole injection layer 6, and α-naphthylphenyldiamine is 50 nm thick as the hole transport layer 7, The light emitting layer 8 was made of 80 nm thick trisaluminum, the electron transport layer 9 was made 50 nm thick aluminum quinolinol complex, the electron injection layer 10 was made 10 nm thick LiF, and the cathode (transparent electrode) 11 was made 120 nm thick ITO.

  SiO2 was formed by sputtering, ITO was formed by laser ablation, and the others were formed by vacuum deposition. In vacuum deposition, a molybdenum boat is installed below the substrate installed above the vacuum apparatus, and deposition is started when the degree of vacuum reaches 5 × 10 −5 Pa, at a rate of 0.3 nm / sec. A film was formed. The substrate temperature was 50 ° C. or lower. Laser ablation was performed by evacuating to a vacuum degree of 5 × 10 −5 Pa and then irradiating the ITO target with a CO 2 gas laser to form a film at a rate of 2 nm / sec. Sputtering was performed after evacuation to a vacuum degree of 1 × 10 −5 Pa, using a SiO 2 target, introducing Ar-10% O 2 gas, supplying 13.5 MHz AC power 500 W, and forming a film at a rate of 2 nm / sec. .

  In order to efficiently dissipate heat from the light emitting layer 8 and heat from the TFT drive circuit 3, in Example 4, the thickness of the insulating layer 23 under the TFT drive circuit 3 is as thin as about 85 nm. At the same time, the interval between the grooves formed in the 0.3 mm thick Al-0.5 wt% Pd metal layer 1 (thermal conductivity of about 236 W / m · K) having a depth of about 0.1 mm is defined as the TFT driving circuit 3. In the lower region, it is densely formed to increase the heat radiation surface area.

After that, although omitted in FIG. 7, it was sealed with an ultraviolet curable epoxy resin. A direct current voltage is applied to the anode 5 and the cathode 11 by the TFT drive circuit 3, and current is injected to cause the light emitting layer 8 to emit light.
Al-0.5 wt% Pd, which is the metal layer 1 of the substrate 12, has a thermal conductivity of about 236 (W / m · K), and conventional glass has a thermal conductivity of 0.55 to 0.75 (W / m m · K), it has a thermal conductivity of about 300 times or more. Therefore, the heat generated in the OLED can be efficiently transferred to the outside air to dissipate heat, and the temperature rise of the OLED can be suppressed. .

A groove with a depth of about 0.1 mm was provided on the surface of the Al-0.5 wt% Pd layer 1, but the area of the metal surface increased by providing the groove, so the contact area with the ambient air atmosphere increased. It becomes easy to dissipate heat. Since the groove spacing is densely formed in the region below the TFT drive circuit 3 to increase the heat radiation surface area, the heat from the TFT drive circuit 3 can be radiated sufficiently efficiently.
In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided.
The thickness of the insulating layer 23 in the region below the TFT drive circuit 3 is as thin as about 85 nm. Since the heat generation of the TFT drive circuit 3 is quickly transmitted to the Al-0.5 wt% Pd layer 1 by making the thickness thin, it is possible to suppress the temperature rise of the TFT drive circuit 3. Also, the groove spacing of about 0.1 mm depth provided on the surface of the Al-0.5 wt% Pd layer 1 is formed densely in the region below the TFT drive circuit 3 to increase the heat dissipation surface area. Therefore, the heat from the TFT drive circuit 3 can be dissipated sufficiently efficiently.

  By adding Pd to Al, stress resistance and corrosion resistance can be improved, and the thickness can be reduced to 0.3 mm to achieve flexibility. The TFT drive circuit 3 is formed in the screen portion (precisely in the pixel portion) by planar technology or organic semiconductor technology.

[Embodiment 2]
FIG. 8 is a diagram showing an outline of an active matrix driving organic light-emitting display panel circuit according to Embodiment 2 of the present invention.
In the top emission type organic light emitting displays shown in the first to fourth embodiments of the present invention, the TFT driving circuit can be disposed at a position overlapping the light emitting region of the organic light emitting layer 8, so that the light emitting region on the panel surface is effectively used. An efficient active matrix driven organic light emitting display panel that can be utilized can be constructed.

In FIG. 8, in the organic light emitting display panel, a plurality of scanning lines 31, 31, 31, 31 are arranged horizontally, and a plurality of data lines 32, 32, 32, 32 are arranged perpendicular to the scanning lines.
Each pixel region is defined by the scanning line 31 and the data line 32, and the driving circuit 3 in each pixel region is driven by the scanning line signal supplied to the scanning line 31 and the data line signal supplied by the data line 32. Is done. Under the control of the drive circuit 3, a direct current voltage is applied between the anode 5 and the cathode 11, and a current is injected to cause the organic light emitting layer 8 to emit light.

Although not explicitly shown in FIG. 8, a metal plate is disposed on the entire lowermost surface of the pixel region in the drawing, a layer including each driving circuit 3 is disposed thereon, and a reflective anode is disposed thereon. The layer 5 is disposed, the organic light emitting layer 8 is disposed thereon, and the transparent cathode 11 is disposed thereon. Further, a power supply circuit, a power supply line, and a control line for supplying a control signal are added as necessary.
Under the control of the drive circuit 3 selected by the scanning line 31 and the data line 32, the light emitted from the organic light emitting layer 8 is reflected by the reflective anode 5 disposed below the organic light emitting layer 8, and from the organic light emitting layer 8. It becomes a top emission type organic light emitting display panel from which light is extracted through the transparent cathode 11 disposed above.

  As described above, in the present invention, even when the drive circuit 3 is disposed at a position overlapping the light emitting region in each pixel, the reflective anode 5 can be disposed in the entire pixel region, and further, The organic light emitting layer 8 and the transparent cathode 11 can be disposed in the entire pixel region, and an active matrix driven organic light emitting display panel that can make maximum use of the light emitting region of the organic light emitting display panel can be configured.

  According to the present invention, regarding problems such as heat generation due to the proximity of the organic light emitting layer 8 and the drive circuit 3, the substrate is made of a metal layer and an insulating layer, and a metal material having good thermal conductivity is selected. It is also possible to solve the problem by adjusting the thickness of the insulating layer below the drive circuit 3 and the unevenness for heat dissipation provided in the metal layer.

[Embodiment 3]
FIG. 9 is a diagram showing an outline of an active matrix driving organic light emitting display device according to Embodiment 3 of the present invention.
In FIG. 9, the active matrix driving organic light emitting display device includes an active matrix driving OLED panel, a scanning line driving circuit, and a data line driving circuit. Although not shown, a power supply circuit, a power supply line, a control line for supplying a control signal, a power supply control circuit, a power supply voltage supply circuit, a control signal drive circuit, and the like are added as necessary.

  When a scanning line signal is supplied to the scanning line by the scanning line driving circuit and a data line signal is supplied to the data line by the data line driving circuit, and a specific pixel in the OLED panel is selected, the driving circuit 3 in the pixel is selected. Is driven, and the light emitted from the organic light emitting layer 5 is reflected by the reflective anode 5 and taken out from the OLED panel under the control of the drive circuit 3, and an image can be displayed on the OLED panel.

[Reference example]
The embodiment of the present invention includes the drive circuit 3 in the organic light-emitting display. However, as a reference example, FIG. 10 shows an illumination that emits white light almost uniformly without creating a TFT drive circuit. An application example is shown.
In the reference example, an OLED using a substrate 12 composed of an Al-2 wt% Nd metal layer 1 and an Al2O3 insulating layer 2 by anodic oxidation is provided.

  FIG. 10 is a schematic cross-sectional view of a reference example OLED of the present invention. An Al-2 wt% Nd metal layer 1 (thermal conductivity of about 236 W / m · K) having a thickness of 0.2 mm is anodized to form an insulating layer 2 having a thickness of about 100 nm with Al 2 O 3. A substrate 12 is made of the Al-2 wt% Nd metal layer 1 and the Al2O3 insulating layer 2.

  A groove having a depth of about 0.1 mm is formed on the surface of the Al-2 wt% Nd metal layer 1. Anodization was performed as follows. As the chemical conversion solution, a 3 wt% tartaric acid aqueous solution was neutralized with ammonia water to PH 6.5 to 7.0, and further ethylene glycol was mixed at a volume ratio of 9 times. Oxidation is performed by passing a formation current with the Al-2 wt% Nd metal layer 1 as the anode and the Pt electrode as the cathode. The formation current density was about 12 μA / cm 2 and the formation voltage was 8V. After forming the insulating layer 2, the anode (reflecting electrode) 5 is 100 nm thick as Al, the hole injection layer 6 is arylamine 50 nm thick, the hole transport layer 7 is α-naphthylphenyldiamine 50 nm thick, and the light emitting layer The total thickness of the white phosphorescent material was about 30 nm, the aluminum quinolinol complex was 50 nm thick as the electron transport layer 9, the LiF was 10 nm thick as the electron injection layer 10, and the ITO was 120 nm thick as the cathode (transparent electrode) 11.

  ITO was formed by laser ablation, and the others were formed by vacuum deposition. In vacuum deposition, a molybdenum boat is installed below the substrate installed above the vacuum apparatus, and deposition is started when the degree of vacuum reaches 5 × 10 −5 Pa, at a rate of 0.3 nm / sec. A film was formed. The substrate temperature was 50 ° C. or lower. Laser ablation was performed by evacuating to a vacuum degree of 5 × 10 −5 Pa and then irradiating the ITO target with a CO 2 gas laser to form a film at a rate of 2 nm / sec. After that, although omitted in FIG. 5, it was sealed with an ultraviolet curable epoxy resin. A direct current voltage is applied to the anode 5 and the cathode 11 to inject current to cause the light emitting layer 8 to emit light.

  Al-2 wt% Nd, which is the metal layer 1 of the substrate 12, has a thermal conductivity of about 236 (W / m · K), and the conventional glass has a thermal conductivity of 0.55 to 0.75 (W / m · K). K), it has a thermal conductivity of about 300 times or more, so that heat generated in the OLED can be efficiently transmitted and radiated into the external air, and the temperature rise of the OLED can be suppressed. Further, since the density of Al-2 wt% Nd is 2.7 (g / cm 3) and the glass is 2.6 (g / cm 3), the same thickness can be produced with almost the same weight.

  Although a groove having a depth of about 0.1 mm is provided on the surface of the Al-2 wt% Nd layer 1, since the area of the metal surface is increased by providing the groove, the contact area with the ambient air atmosphere is increased and heat dissipation is performed. It becomes easy to do. In view of the assembly of the display, even when an adhesive, an adhesive sheet, a protective film, or the like is provided on the surface of the metal layer, it is preferable to provide unevenness on the metal surface because the heat dissipation effect is higher than when it is not provided. By making the substrate a metal layer, it becomes possible to easily make the substrate flexible, which is impossible with glass. By adding Nd to Al, the stress resistance and the corrosion resistance are improved, and the thickness can be reduced to 0.2 mm to achieve flexibility.

  The above is an application proposal to illumination and the like, and it is not necessary to process the electrode of the light emitting portion, and the electrode and the OLED constituent film may be solid.

[Other embodiments]
As described above in each example and reference example, the insulating layer is not limited to Al 2 O 3 or SiO 2, but an electrical oxide such as an anodic oxide film or natural oxide film of a metal layer, AlN, MgO, Si 3 N 4, or SiOxNy is used. The insulating layer is not limited to a single layer, and a multilayer film is also included in the present invention.
The thickness of the metal layer is not particularly limited, and the metal layer can be used properly from the use as a plate to the use in the form of a film, that is, from the unit of cm to the unit of μm.

Moreover, the groove | channel formed in the metal layer surface does not prescribe | regulate a shape, depth, etc.
Moreover, although the OLED which consists of a low molecular weight organic compound was described in the present Example, the OLED which consists of a high molecular weight organic compound is also contained in the scope of the present invention.

  Further, the stacked structure of the OLED is not limited to the stacking order of the anode, the light emitting layer, and the cathode shown in this embodiment, and the order of the cathode, the light emitting layer, and the anode may be used. The light emitting layer is not limited to the separate light emitting layers of R, G, and B. A white light emitting layer may be formed and pixels may be distinguished by R, G, and B color filters. May be formed, the color may be converted by the color conversion layer, and then the pixels may be distinguished by the color filter.

  Further, the drive circuit is not limited to the TFT drive circuit, and may be an MIM (Metal Insulator Metal) drive circuit, an SIT (Static Inductive Transistor) drive circuit, or the like.

  Even in an OLED for illumination in which a cathode, a light emitting layer, and an anode are attached without providing a drive circuit in the screen of the substrate (exactly in a pixel), a substrate made of a metal layer and an insulating layer is used. By forming the groove in the groove, it is possible to obtain a heat shielding effect and a heat dissipation effect of moisture, oxygen, and alkali movable ions, so that highly reliable OLED illumination can be realized.

  As described above, the present invention can dissipate heat generated from an organic compound constituting an OLED, a TFT drive circuit, etc. through a non-light transmissive substrate including a metal layer and an insulating layer, and moisture. In addition, since it is possible to block movable oxygen and alkali ions, it can be used for a good top emission type OLED.

1 is a schematic cross-sectional view of a top emission OLED according to a first embodiment of the present invention (Example 1). FIG. The top emission type OLED schematic sectional drawing as a comparative example using a glass substrate. The figure which shows the change of the brightness | luminance with respect to the elapsed time after the lighting start of Example 1 and a comparative example of this invention. The figure which shows the change of the temperature with respect to the elapsed time after the lighting start of Example 1 and a comparative example of this invention. The top emission type OLED schematic sectional drawing of Example 2 of this invention. FIG. 6 is a schematic cross-sectional view of a top emission type OLED according to Example 3 of the present invention. FIG. 6 is a schematic cross-sectional view of a top emission type OLED according to Example 3 of the present invention. FIG. 5 is a schematic diagram of an active matrix driven top emission OLED panel according to a second embodiment of the present invention. FIG. 5 is a schematic diagram of an active matrix driven top emission OLED device according to a third embodiment of the present invention. The figure which shows the reference example applied to the illumination which light-emits white light substantially uniformly on the whole surface, without producing a TFT drive circuit. It is a conventional bottom emission type OLED schematic sectional view. An OLED using a substrate 12 composed of three insulating layers 2 is provided. The figure which shows Table 1 which described the heat conductivity and density of a harmless main metal, glass, and polycarbonate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Metal layer 2,23 Insulating layer 3 TFT drive circuit 4 Flattening layer 5 Anode (reflection electrode)
6 hole injection layer 8 light emitting layer 9 electron transport layer 10 electron injection layer 11 cathode (transparent electrode)
12 Substrate consisting of metal layer and insulating layer 20 Glass substrate 21 Anode (transparent electrode)
22 Cathode (reflective electrode)
31 scanning lines 32 data lines

Claims (9)

In a top emission type organic light emitting display in which a reflective electrode, an organic light emitting layer, and a transparent electrode are laminated on a substrate,
Between the substrate and the reflective electrode, a layer in which a drive circuit is arranged at a position overlapping the light emitting region of the organic light emitting layer is laminated, and the substrate is made up of a metal layer having no light transmittance and an insulating layer. A top emission type organic light emitting display. In a top emission type organic light emitting display in which a reflective electrode, a layer including an organic light emitting layer, and a transparent electrode are laminated on a substrate,
Between the substrate and the reflective electrode, a layer in which a TFT driving circuit is arranged at a position overlapping the light emitting region of the layer including the organic light emitting layer is laminated, and the substrate has good thermal conductivity and light transmittance. A top-emission organic light-emitting display comprising a metal layer and an insulating layer that are not provided, and provided with unevenness for heat dissipation on the surface of the metal layer opposite to the side where the insulating layer is present on the substrate. In a top emission type organic light emitting display in which a reflective electrode, a layer including an organic light emitting layer, and a transparent electrode are laminated on a substrate,
Between the substrate and the reflective electrode, a layer in which a TFT drive circuit is arranged is overlapped with the light emitting region of the layer including the organic light emitting layer, and the substrate has good thermal conductivity and light transmittance. A top emission type organic light emitting display comprising a metal layer and an insulating layer which are not formed, and wherein the thickness of the insulating layer of the substrate is thin in a region where the TFT driving circuit is disposed. In a top emission type organic light emitting display in which a reflective electrode, a layer including an organic light emitting layer, and a transparent electrode are laminated on a substrate,
Between the substrate and the reflective electrode, a layer in which a TFT drive circuit is arranged is overlapped with the light emitting region of the layer including the organic light emitting layer, and the substrate has good thermal conductivity and light transmittance. The insulating layer of the substrate is thin in the region of the drive circuit, and provided with unevenness for heat dissipation on the surface of the metal layer opposite to the side where the insulating layer exists, The top emission type organic light emitting display characterized in that in the region corresponding to the position of the drive circuit, the unevenness is closely spaced and the surface area for heat dissipation is large.   5. The top emission type organic light emitting display according to claim 1, wherein the substrate comprises a metal layer made of Al or an Al alloy and an insulating layer.   6. The Al alloy of the metal layer of the substrate is an alloy containing Al as a main component and at least one additive of Cu, Pd, Nd, Ti, Si, Mg, and Mn. The top emission type organic light emitting display as described.   7. The top emission type organic light emitting display according to claim 1, wherein the insulating layer of the substrate includes at least an anodized layer of the metal layer.   A plurality of pixels comprising the top emission type organic light emitting display according to claim 1, a scanning line for controlling each of the driving circuits in the plurality of pixels to emit light from the organic light emitting layer, and An active matrix driven top emission organic light emitting display panel with data lines.   9. An active matrix driven top emission organic light emitting display panel according to claim 8, a scanning line driving circuit for supplying a scanning line signal to the scanning line, and a data line driving circuit for supplying a data signal to the data line. Active matrix drive top emission type organic light emitting display device equipped.

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