JP2006344573A - Acceleration switch and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To detect acceleration of two-axial and three-axial directions by a single acceleration switch with superior sensitivity. <P>SOLUTION: The acceleration switch 101 is provided with a mass body 111, and beams 112, 113 which are bent by an inertia force applied to the mass body 111 in receiving the acceleration and of which the axial directions form a curve on the same flat face in a state without this bending. A plurality of couples of contact points 131 to 146 have conductivity, and make a pair by being installed at a fixed conductor 118 in which one is arranged on a surface of the mass body 111 while the other is arranged at the surrounding of the mass body 111, and this pair is contacted with each other by displacement of the mass body 111. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an acceleration switch and an electronic device including the acceleration switch.

  A conventional acceleration sensor that measures the displacement using a change in light, inductance, capacitance, resistance value, etc., by displacement of a cantilever beam or a both-end beam connected to the weight due to acceleration applied to the weight, A vibration sensor consumes electric power to operate these sensors. And since this power consumption is consumed as standby power even outside the time zone where the measurement operation by the sensor is required, there is a problem that the power consumption is large in the conventional acceleration sensor or the like.

  In addition, in the “rolling ball type vibration sensor” using a metal ball, since the metal ball is not fixed, the contact is closed in the normal state (the contact in the normal state is called “normally closed” There is a problem that the power consumption is still large.

  Therefore, a “magnet adsorption sphere vibration sensor” has been proposed in which a metal sphere is made of a magnetic material and the metal sphere is levitated by an external magnetic field. This "magnet adsorption ball type vibration sensor" has a metal ball fixed by a magnet, so the contact is open in the normal state (the contact is closed in the normal state is called "normally open", "NO" Therefore, the power consumption can be reduced to zero in the normal state and the power consumption can be reduced.

  However, the “rolling ball type vibration sensor” has a problem in that if an electric motor or the like is present in the vicinity, it malfunctions and vibrations in all directions cannot be detected.

  Therefore, a “semiconductor acceleration switch” is known as means for solving the above-described problems of the acceleration sensor and the vibration sensor (see Patent Documents 1 to 3, etc.).

The “semiconductor acceleration switch” is a device in which a cantilever or a double-supported beam connected to the weight is simply displaced by acceleration applied to the weight, and the occurrence of this displacement is measured by a contact opening / closing operation. Because of this principle, the “semiconductor acceleration switch” has the advantage that it can reduce power consumption to zero and is hardly affected by a magnetic field or an electric field.
JP 2000-65855 A Japanese Patent Laid-Open No. 2000-065856 JP 2002-22765 A

  However, since the conventional “semiconductor acceleration switch” is used for controlling an automobile airbag, it can detect only vibration and acceleration in only one axial direction.

  For this reason, for example, an application in which a small load is energized on the condition that vibration in either direction occurs or acceleration is applied (specifically, an IC circuit is mounted on a small card, In order to detect that a vibration or acceleration in either direction has been applied to the card with an acceleration switch mounted on the card and energize the IC circuit, the conventional “semiconductor acceleration switch” Since vibration or acceleration cannot always be detected, there is a problem that it cannot be used.

  An object of the present invention is to enable a single acceleration switch to detect with high sensitivity even if it receives acceleration in two or three axes.

  In the present invention, the mass body supports the mass body and bends due to the inertial force applied to the mass body when subjected to acceleration. In the absence of this deflection, the axial direction forms a curve on the same plane. A plurality of sets having a pair of beams, which are electrically conductive, one of which is provided on a member disposed on the surface of the mass body and the other of which is disposed in the vicinity of the mass body, the pair contacting each other due to the deflection of the beam An acceleration switch.

  According to the present invention, since the axial direction of the beam supporting the mass body is the same plane and is curved, the acceleration in the biaxial direction and the triaxial direction can be detected with high sensitivity by a single acceleration switch. be able to.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

[Configuration and operation of acceleration switch]
First, the configuration and operation of the acceleration switch of this embodiment will be described.

  FIG. 1 is a perspective view seen from the top side for explaining the configuration of the acceleration switch 101 of the present embodiment, FIG. 2 is a perspective view seen from the bottom side, and FIG. 3 is a sectional view taken along line III-III in FIG. It is.

  As shown in FIGS. 1 to 3, the acceleration switch 101 is configured by laminating a first substrate 102, a second substrate 103, and a third substrate 104 from above (however, the first substrate 102, FIG. In FIG. 2, the third substrate 104 is not shown). The third substrate 104 is formed of an insulating material, and the first substrate 102 and the second substrate 103 are formed of a conductive material.

  A series of grooves 115 formed so as to penetrate the thickness direction is formed in the central portion of the second substrate 103. Accordingly, the mass body 111, the beam 112 having one end coupled to the mass body 111, the beam 113 having one end coupled to the other end of the beam 112, and the other end of the beam 113 are coupled to the mass body 111 and the beam. A series of central structures 116 on which support pillars 114 for supporting 112 and 113 are formed, and a frame body 117 arranged so as to surround the central structure 116 are formed. The frame body 117, the first substrate 102 stacked in contact therewith, the pads 123 described later, and the through holes 121 are collectively referred to as a fixed conductor 118. The central structure 116, the pad 124, and the through hole 122 are collectively referred to as a moving conductor 119.

  The beams 112 and 113 are flexible, and the mass body 111 is displaced with respect to the support column 114 when the acceleration switch 101 receives an acceleration of a certain level or more. Now, an X axis, a Y axis, and a Z axis that are orthogonal to each other in space are assumed. In this example, as shown in FIGS. 1 to 3, the X axis is the short direction of the acceleration switch 101, the Y axis is the long direction of the acceleration switch 101, and the Z axis is the plate thickness direction. For example, the length direction of the beam 112 is the Y-axis direction, and the length direction of the beam 113 is the X-axis direction, which are orthogonal to each other. Therefore, the beam 112 can be bent in the X-axis direction and the Z-axis direction, and the beam 113 can be bent in the Y-axis direction and the Z-axis direction. Thereby, when the acceleration is received, the beams 112 and 113 are bent by the inertial force applied to the mass body 111 and can be displaced in all directions. Further, when the beam consisting of the beams 112 and 113 is not bent by the inertial force applied to the mass body 111, the axial direction thereof is the same plane and is curved. Specifically, in this example, the axial direction of the beam 112 and the axial direction of the beam 113 are XY planar and are perpendicular to each other.

  The third substrate 104 is provided with through holes 121, 122. A conductive pad 123 that is electrically connected to the frame body 117 and the electrode 124 through the through hole 121, and a central structure through the through hole 122. A conductive pad 124 electrically connected to the body 116 and the electrode 125 is provided.

  Projections 131 to 142 are formed on the surface of the mass body 111 facing the fixed conductor 118 or on the inner peripheral surface of the fixed conductor 118 facing the mass body 111. When the acceleration switch 101 receives acceleration and the mass body 111 is displaced in an arbitrary direction, any position of the mass body 111 comes into contact with any position of the fixed conductor 118. A contact position between the mass body 111 and the fixed conductor 118 serving as a structure disposed around the mass body 111 is a pair of conductive contacts. Since there are a plurality of contact positions due to the displacement of the mass body 111, a plurality of pairs of contact points are also provided. The aforementioned protrusions 131 to 146 are provided at positions of the pair of contacts on the mass body 111 side or the fixed conductor 118 side. Hereinafter, the same reference numerals as those of the protrusions 131 to 146 are attached, and the plurality of contact points described above are referred to as contact points 131 to 146.

  As described above, the fixed conductor 118 and the moving conductor 119 are in contact with each other through any one of the contacts 131 to 146. Therefore, the pad 123, which is a soldering pad, a wire bonding pad, etc. If the negative terminal is connected, a current flows only when the fixed conductor 118 and the moving conductor 119 are in contact via any one of the contacts 131 to 146, and the acceleration switch 101 is closed only when the acceleration is detected. Functions as a flow switch.

  Specifically, when acceleration is received in the positive direction of the X direction, the beam 112 bends, the mass body 111 and the contacts 131 and 132 come into contact with each other, and a current flows. Further, when the acceleration is received in the negative direction in the X direction, the beam 112 bends, the mass body 111 and the contacts 133 and 134 come into contact with each other, and a current flows.

  Similarly, when acceleration is received in the positive direction in the Y direction, the beam 113 bends, the mass body 111 and the contacts 135 and 136 come into contact with each other, and a current flows. Further, when the acceleration is received in the negative direction in the X direction, the beam 113 is bent, and the mass body 111 and the contacts 137 and 138 come into contact with each other, so that a current flows.

  When acceleration is received in the positive direction in the Z direction, the beams 112 and 113 are bent, and the contacts 139 to 142 of the mass body 111 and the fixed conductor 118 (the first substrate 102) come into contact with each other, so that a current flows. Further, when the acceleration is applied in the negative direction in the Z direction, the beam 112 is bent, and the contacts 143 to 146 of the mass body 111 and the fixed conductor 118 (the contact conductor 125 thereof) come into contact with each other, and a current flows.

  In the acceleration switch 101 having such a configuration, the beam consisting of the beams 112 and 113 is curved with the same axial direction as described above, and therefore, the acceleration applied to the acceleration switch 101 can be detected with high sensitivity. Can do.

  Next, when an angular acceleration about the X axis is applied to the acceleration switch 101, the beam 112 and the beam 113 are simultaneously bent, and the contact points 139 and 140 are first connected to the fixed conductor 118 (the first substrate 102) by the direction of the rotation. When contact is made at the same time and the acceleration is further increased, the contacts 141 and 142 are also brought into contact with the fixed conductor 118 (the first substrate 102), or the contacts 143 and 144 are first brought into contact with the fixed conductor 118 (the contact conductor 125) simultaneously. When the acceleration further increases, the contacts 145 and 146 come into contact with the fixed conductor 118 (the contact conductor 125) at the same time.

  In this way, if the contacts for detecting the acceleration in the positive or negative direction in the Z-axis direction (or the positive or negative direction in the Y-axis direction) are arranged on both sides of the X-axis, Both forward and reverse angular accelerations around the X axis can be detected.

  Similarly, when an angular acceleration about the Y axis is applied to the acceleration switch 101, the beam 112 and the beam 113 are bent at the same time, and the contact points 139 and 141 are first connected to the fixed conductor 118 (the first substrate 102) by the direction of the rotation. When contact is made at the same time and the acceleration is further increased, the contacts 140 and 142 are also brought into contact with the fixed conductor 118 (the first substrate 102), or the contacts 143 and 144 are first brought into contact with the fixed conductor 118 (the contact conductor 125) simultaneously. When the acceleration further increases, the contacts 145 and 146 come into contact with the fixed conductor 118 (the contact conductor 125) at the same time.

  In this way, if the contacts for detecting the acceleration in the positive or negative direction in the Z-axis direction (or the positive or negative direction in the X-axis direction) are arranged on both sides of the Y-axis, Both forward and reverse angular accelerations around the Y axis can be detected.

  Similarly, when angular acceleration about the Z-axis is applied to the acceleration switch 101, the beam 112 and the beam 113 are bent at the same time, and the contact points 131 and 133 are brought into contact with the moving conductor 119 (the mass body 111) simultaneously with the rotation direction. Alternatively, the contacts 132 and 134 are in contact with the moving conductor 119 (the mass body 111) at the same time.

  In this way, if the contacts for detecting the acceleration in the positive direction or the negative direction in the X axis direction (or the positive direction or the negative direction in the Y axis direction) are arranged on both sides of the Z axis, Both forward and reverse angular accelerations around the Z axis can be detected.

  Next, a specific usage example of the acceleration switch 101 will be described.

  FIG. 4 is a circuit diagram of a configuration example of the electronic device 201 using the acceleration switch 101. The electronic device 201 is, for example, a small portable card, and an IC (Integrated Circuit) circuit 202, a battery 203 serving as a power source, and an acceleration switch 101 are provided therein. The IC circuit 202 is, for example, an active type RFID (Radio Frequency IDentification) element, and is driven when power is supplied from the battery 203. The acceleration switch 101 functions as a switch for turning on / off the supply of power from the battery 203.

  In this case, the plurality of contacts 143 to 146 of the acceleration switch 101 function as switches connected in parallel. When the electronic device 201 receives an acceleration in an arbitrary direction, at least one of the contacts 143 to 146 is closed. , Power is supplied to the IC circuit 202.

  Therefore, by using the acceleration switch 101 in the electronic device 201, the acceleration switch 101 senses any direction of acceleration received by the electronic device 201, and power is supplied from the battery 203 to the IC circuit 202.

  When the electronic device 201 is a portable small card, the acceleration switch 101 receives acceleration in an arbitrary direction due to shaking when the user operates the electronic device 201 that is the card in his / her hand. The IC circuit 202 is driven. Therefore, the IC circuit 202 can always be driven automatically whenever the user operates the electronic device 201 that is a card with the hand.

  On the other hand, since the conventional acceleration switch can only detect acceleration in one direction, when mounted on the electronic device 201 that is a card, the acceleration cannot be detected depending on the direction of shaking, and the user holds it in his / her hand. In some cases, the IC circuit 202 cannot be automatically driven even if it is operated.

  Further, since the acceleration switch 101 does not require standby power for driving unlike the conventional acceleration sensor, significant power saving can be achieved. In particular, when the electronic device 201 is a small portable card as described above, the battery 203 must be extremely small, and if the electronic device 201 is used for a long time without being charged, the acceleration is accelerated. It can be said that the use of the acceleration switch 101 instead of the sensor is significant.

  Furthermore, since the acceleration switch 101 can detect the acceleration in all directions only with the single mass body 111, the apparatus can be miniaturized.

  Next, the configuration and operation of an acceleration switch according to another embodiment will be described.

  FIG. 5 is a perspective view seen from the top side for explaining the configuration of the acceleration switch 101 of the present embodiment, FIG. 6 is a perspective view seen from the bottom side, and FIG. 7 is a sectional view taken along the line VII-VII in FIG. It is.

  As shown in FIGS. 5 to 7, the acceleration switch 301 is configured by laminating a first substrate 302, a second substrate 303, and a third substrate 304 from above (however, in FIG. 5, the first substrate 302, FIG. In FIG. 6, the third substrate 304 is not shown). The first substrate 302 and the third substrate 304 are formed of an insulating material, and the second substrate 303 is formed of a conductive material.

  A series of grooves 315 are formed in the second substrate 303 so as to penetrate the plate thickness direction. Accordingly, the central portion of the second substrate 303 includes a mass body 311, a beam 312 having one end connected to the mass body 311, and a beam 313 having an axial center portion connected to the other end of the beam 312. A series of central structures 316 are supported on the outer frame 351 of the second substrate 303 by beams 313 that are doubly supported beams. These structures, a pad 323 (to be described later), and a through hole 321 are collectively referred to as a moving conductor 319. In addition, the mass body 311, the beams 312 and 313, and the outer frame 351 are separated from each other by a groove 315, and the moving conductor 319 is also divided by the groove 315, in this example, 14 pieces. Independent pillars 361 to 374 are provided. The independent pillars 361 to 374, pads 324 described later, through holes 381 to 394, and electrodes 421 to 428 are referred to as fixed conductors 318.

  The beams 312 and 313 are flexible, and the mass body 311 is displaced with respect to the fixed conductor 318 when the acceleration switch 301 receives an acceleration of a certain level or more. Now, an X axis, a Y axis, and a Z axis that are orthogonal to each other in space are assumed. In this example, as shown in FIGS. 5 to 7, the X axis is the short direction of the acceleration switch 301, the Y axis is the long direction of the acceleration switch 301, and the Z axis is the plate thickness direction. For example, the length direction of the beam 312 is the Y-axis direction, and the length direction of the beam 313 is the X-axis direction, which are orthogonal to each other. Therefore, the beam 312 can bend in the X-axis direction and the Z-axis direction, and the beam 313 can be bent in the Y-axis direction and the Z-axis direction. Thus, when receiving acceleration, the beams 312 and 313 are deflected by the inertial force applied to the mass body 311 and can be displaced in all directions. Further, when the beam composed of the beams 312 and 313 is not bent by the inertial force applied to the mass body 311, the axial direction thereof is the same plane and is curved. Specifically, in this example, the beam 313 has a double-supported beam structure, but the axial direction of the beam composed of one of the beams 313 supporting the beam 312 and the beam 312 is XY planar and perpendicular.

  The third substrate 304 is provided with a through hole 321, and a tip portion of the through hole 321 is connected to the outer frame 351. Therefore, the mass body 311 can be energized through the pad 323 such as a soldering pad or a wire bonding pad.

  The independent pillars 361 to 374 are also provided with through holes 381 to 394, respectively. The independent pillars 361 to 374 are individually energized via pads 324 such as soldering pads and wire bonding pads. be able to.

  Protrusions 401 to 414 are formed on the surface of the mass body 311 facing the fixed conductor 318 or the first substrate 302 or the third substrate 304 (however, only the contact point 401 faces the beam 313). In this example, protrusions 401 to 406 are provided on the surface of the independent pillars 362, 364, 367, 369, 371, 374 on the mass body 311 side, respectively, and are provided at the four corners of the surface of the mass body 311 on the first substrate 302 side. Are provided with projections 407 to 410, and projections 411 to 414 are provided at the four corners of the surface of the mass body 311 on the third substrate 304 side, respectively.

  In addition, electrodes 421 to 424 arranged at intervals are provided on the surface of the first substrate 302 facing the protrusions 407 to 410, respectively, and third electrodes facing the protrusions 411 to 414, respectively. On the surface on the substrate 303 side, electrodes 425 to 428 arranged at intervals are provided (the electrodes 423, 424, 427, and 428 are not shown). Each electrode 421-424 is electrically connected to only one of the independent columns 361, 363, 368, 370, and each electrode 425-428 is electrically connected to only one of the independent columns 365, 366, 372, 373. It is connected to the.

  When the acceleration switch 301 receives acceleration and the mass body 311 (and also the beam 313) is displaced in an arbitrary direction, any position of the mass body 311 (or the beam 313) comes into contact with any position of the fixed conductor 318. To do. A contact position between the mass body 311 (or the beam 313) and the fixed conductor 318 serving as a structure disposed around the mass body 311 is a pair of conductive contacts. Since there are a plurality of contact positions due to the displacement of the mass body 311 (or the beam 313), a plurality of pairs of contact points are also provided. The protrusions 401 to 414 described above are provided at positions of the pair of contacts on the mass body 311 side or the fixed conductor 318 side. Hereinafter, the plurality of sets of contacts are referred to as contacts 401 to 414 using the same reference numerals as the protrusions 401 to 414.

  In this way, since the fixed conductor 318 and the moving conductor 319 are in contact with each other through any one of the contacts 401 to 414, a pad 323 such as a soldering pad and a wire bonding pad, and a pad 324 are connected to the positive side terminal of the power source, If the negative terminal is connected, a current flows only when the fixed conductor 318 and the moving conductor 319 are in contact with each other via any one of the contacts 401 to 414, and the acceleration switch 301 is closed only when an acceleration is detected. Functions as a flow switch.

  In the acceleration switch 101, since the beams composed of the beams 312 and 313 are curved with the same axial direction as described above, the acceleration applied to the acceleration switch 301 can be detected with high sensitivity.

  Such an acceleration switch 301 is different from the acceleration switch 101 described above because the acceleration switch 301 is configured as described above, so that the contacts 401 to 414 are insulated and which contacts 401 to 414 are closed. The acceleration detected by the acceleration switch 301 is in any direction of the X direction, the Y direction, and the Z direction. Alternatively, it is possible to determine which direction is any of the direction around the X axis, the direction around the Y axis, and the direction around the Z axis.

  Specifically, when the contacts 405 and 408 are closed, it can be determined that the acceleration is positive in the X-axis direction, and when the contacts 402 and 403 are closed, it can be determined that the acceleration is negative in the X-axis direction.

  When the contact 401 is closed, it can be determined that the acceleration is positive in the Y-axis direction. When the contact 404 is closed, it can be determined that the acceleration is negative in the Y-axis direction.

  When the contacts 407 to 410 are closed, it can be determined that the acceleration is positive in the Z-axis direction, and when the contacts 411 to 414 are closed, it can be determined that the acceleration is negative in the Z-axis direction.

  Further, when the contacts 408, 409, 411, and 414 are closed, it can be determined that the angular acceleration is in the positive direction around the X axis, and when the contacts 407, 410, 412, and 413 are closed, the angular acceleration around the X axis is negative. It can be judged as angular acceleration.

  In this way, if the contacts for detecting the acceleration in the positive or negative direction in the Z-axis direction (or the positive or negative direction in the Y-axis direction) are arranged on both sides of the X-axis, Both forward and reverse angular accelerations around the X axis can be detected.

  When the contacts 409, 410, 413, and 414 are closed, it can be determined that the angular acceleration has a positive direction around the Y axis, and when the contacts 407, 408, 411, and 412 are closed, the angular acceleration has a negative direction around the Y axis. It can be judged.

  In this way, if the contacts for detecting the acceleration in the positive or negative direction in the Z-axis direction (or the positive or negative direction in the X-axis direction) are arranged on both sides of the Y-axis, Both forward and reverse angular accelerations around the Y axis can be detected.

  When the contacts 403 and 408 are closed, it can be determined that the angular acceleration is in the positive direction around the Z axis, and when the contacts 402 and 407 are closed, it can be determined as the angular acceleration in the negative direction around the Z axis.

  In this way, if the contacts for detecting the acceleration in the positive direction or the negative direction in the X axis direction (or the positive direction or the negative direction in the Y axis direction) are arranged on both sides of the Z axis, Both forward and reverse angular accelerations around the Z axis can be detected.

  Next, a specific usage example of the acceleration switch 301 will be described.

  FIG. 8 is a circuit diagram of a configuration example of the electronic device 501 using the acceleration switch 301. In this example, the electronic device 501 is a small robot arm device. Inside the electronic device 501, a robot arm 502, a servo motor 503 connected to the robot arm 502 and driving the robot arm 502, and a microcomputer are incorporated. A controller 504 for controlling the motor 503, a battery 505 serving as a power source, and an acceleration switch 301 attached to the robot arm 502 are provided.

  The servo motor 503 and the controller 504 operate using the battery 505 as a power source. The controller 504 determines the direction and direction of acceleration of the robot arm 502 from the input signal of the acceleration switch 301, and feedback control or feed forward control of the servo motor 503. To do.

  That is, as shown in FIG. 9, since the signals from the respective contacts 401 to 414 of the acceleration switch 301 are independently input to the controller 504, depending on which of the contacts 401 to 414 the signal is input or the combination thereof The controller 504 can determine the direction and direction of acceleration of the robot arm 502.

  On the other hand, since the conventional acceleration switch can only detect acceleration in one direction, the servo motor 503 can detect the direction and direction of acceleration accurately when it is mounted on the electronic device 501 that is a robot arm device. Can not control.

  Further, since the acceleration switch 301 does not require standby power for driving unlike the conventional acceleration sensor, significant power saving can be achieved. In particular, when the electronic device 501 is a small robot arm device as described above, the battery 505 must be extremely small, and if the electronic device 201 is used for a long time without being charged, the acceleration sensor However, it can be said that the significance of using the acceleration switch 301 is great.

  Furthermore, since the acceleration switch 301 can detect the acceleration in all directions with only the single mass body 311, the apparatus can be miniaturized.

  The acceleration switch 101 has an L-shaped cantilever structure with beams 112 and 113, and the acceleration switch 301 has a T-shaped cantilever structure with beams 312 and 313. The acceleration switch 301 may have a cantilever structure.

  Further, when the cantilever beam structure is adopted, it works equivalently to the beam 113 that controls the bending stiffness in the Y direction (as in the example of the acceleration switch 101), compared to the case where the double-supported beam structure is adopted. Since the rigidity of the beam 313 (as in the example of the acceleration switch 301) does not increase and the sensitivity does not decrease, the sensitivity of the acceleration switches 101 and 301 can be increased.

  On the other hand, in the double-supported beam structure, the double-supported beam 313 itself (as in the example of the acceleration switch 301) has a large rigidity in the X-axis direction and hardly has sensitivity in the X direction. Therefore, when the double-supported beam structure is adopted, there is an advantage that the selectivity is high.

  That is, an L-shaped beam as shown in FIG. 1 bends not only in the Y direction but also in the X direction when subjected to a pure acceleration in the Y direction. This is because the cantilever beam, that is, the beam has an asymmetric structure, so that it is displaced in the rotation direction by a stress component in the rotation direction of the beam in the X direction. Accordingly, although the acceleration is purely in the Y direction, the acceleration switch 101 having a cantilever structure also detects an X direction acceleration component.

  On the other hand, a T-shaped beam as shown in FIG. 5 is displaced only in the Y direction when it receives an acceleration in the pure Y direction. Since this is a doubly-supported beam, the stress component in the rotational direction of the beam 313 in the X direction exists on both sides centering on the beam 312 in the Y direction, so that they cancel each other.

  Next, the configuration and operation of an acceleration switch according to another embodiment will be described.

  FIG. 35 is a longitudinal sectional view of the acceleration switch of the present embodiment, and FIG. 36 is a plan view of a second substrate of the acceleration switch. A line AA ′ in FIG. 36 indicates a cutting position in FIG. FIG. 35 conceptually shows the cross-sectional structure of the acceleration switch and does not match the size of each part in FIG.

  As shown in FIG. 35, the acceleration switch 1001 includes, in order from the top, a first substrate 1002 made of an insulator such as glass, a second substrate 1003 made of a conductive material such as Si, and a first substrate made of an insulator such as glass. Three substrates 1004 are laminated.

  As shown in FIG. 36, the second substrate 1003 includes a support body 1012, two beams 1012 and 1013, a mass body 1014, a counter electrode 1016, and the like formed by etching a conductive material such as Si. The The beams 1012 and 1013, the mass body 1014, the fixed conductor 1015, and the counter electrode 1016 are accommodated in the central hollow portion of the support body 1011.

  The beams 1012, 1013 have their base ends fixed to the inner peripheral surface 1022 of the hollow portion of the support 1021, and their tail ends fixed to the mass body 1014. The mass body 1014 has beams 1012 on both sides. 1013. In a state where the beams 1012 and 1013 are not bent, the axial directions of both the beams 1012 and 1013 are curved in the same plane (plane of FIG. 36). Specifically, the beams 1012 and 1013 have an arc shape in which the axial direction almost goes around the mass body 1014.

  The mass body 1014 has a donut shape, and a cylindrical counter electrode 1016 is disposed opposite to the inner peripheral surface 1032 of the mass body 1014 with a slight gap in a cylindrical cavity provided at the center thereof. .

  As shown in FIG. 35, a slight gap is provided between the first substrate 1002 and the third substrate 1004 and the mass body 1014. Thin film metals 1041 and 1042 are formed in the vicinity of the counter electrode 1016 at positions facing the mass bodies 1014 on the inner surfaces of the first substrate 1002 and the third substrate 1004. The metals 1041 and 1042 are electrically connected to the counter electrode 1016.

  The counter electrode 1016 is electrically connected to the extraction electrode 1051, and the second substrate 1003 is electrically connected to the extraction electrode 1052. The support 1011, the beams 1012 and 1013, the mass body 1014, the metals 1041 and 1042, and the extraction electrode 1052 constitute a moving conductor 1061, and the counter electrode 1016 and the extraction electrode 1051 constitute a fixed conductor 1062.

  In the acceleration switch 1001 having such a configuration, when acceleration is applied, the beams 1012 and 1013 bend and the mass body 1014 moves due to inertial force, and when moving in the X direction and the Y direction, it contacts the counter electrode 1016 and Z When moving in the direction, the metal 1041 and 1042 are contacted. As a result, the moving conductor 1061 and the fixed conductor 1062 come into contact with each other regardless of the acceleration in any of the three axial directions of the X direction, the Y direction, and the Z direction (this contact position becomes a contact point) and is electrically connected. Therefore, the acceleration in the triaxial direction can be detected by the acceleration switch 1001.

  Since each of the beams 1012 and 1013 has an arc shape that substantially goes around the circumference, the acceleration in the X direction and the Y direction can be detected with high sensitivity.

[Material and manufacturing method of acceleration switch]
Hereinafter, materials suitable for manufacturing the acceleration switches 101 and 301 will be described.

  First, the acceleration switch 101 will be described as an example.

  Suitable electrical conductive materials for the first substrate 102 and the second substrate 103 include aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, and tantalum. A film of an electrically insulating material containing silicon oxide, boron oxide, lead oxide, phosphorus oxide, aluminum oxide, etc. on the surface of a single metal such as niobium, vanadium, chromium, molybdenum, tungsten, titanium and an alloy material containing the above materials Can be used.

  Further, electrical insulating materials suitable for use in the third substrate 104 are semiconductors such as carbon, silicon, germanium, and silicon carbide, silicon oxide, boron oxide, lead oxide, phosphorus oxide, aluminum oxide, silver oxide, and oxide. Examples thereof include glass, ceramics, polymer materials and polymer materials containing tin, titanium oxide, zirconium oxide, beryllium oxide, magnesium oxide, calcium oxide, strontium oxide and barium oxide.

  Note that the first substrate 102 and the second substrate 103 may be formed using an electrically insulating material as a base material. However, it is necessary to form a film of an electrically conductive material on the surface, which is preferable in terms of manufacturing cost. There is no.

  The protrusions 131 to 138 of the mass body 111 can be formed simultaneously when the beams 112 and 113 are formed on the second substrate 103. As an example of the forming method in this case, it is conceivable to sequentially perform the following steps (1) to (4).

  (1) The second substrate 103 is singly etched by etching or the like from the lower surface (the third substrate 104 side) to the thickness of the beam 112 in the Y direction and the beam 113 in the X direction.

  (2) At the same time, the lower side of the eight protrusions 131 to 138 on the side surface of the mass body 111 is also dug up to the thickness of the beams 112 and 113.

  (3) The second substrate 103 in which the groove 115 has been processed in advance from the lower surface is bonded to the first substrate 16.

  (4) After that, only the portion of the second substrate 103 to be penetrated is dug from the upper surface by etching or the like and penetrated.

  When the above method is used, a structure having the thickness of the second substrate 103 and a structure having the thickness of the beams 112 and 113 can be formed on the second substrate 103 with two types of thicknesses. .

  The joining method used for joining the second substrate 103 and the first substrate 102 manufactured as described above, and joining the second substrate 103 and the third substrate 104 is performed with the surface roughness of both being 20 mm or less. `` Direct bonding '', `` Diffusion bonding '' in which the temperature is raised and pressed near the melting point of the material of the bonding surface, a material with a melting point lower than the melting point of the base material is formed on the bonding surface, and the material of the bonding surface is melted and heated “Brazing” or the like can be used.

  The materials of the pads 323 and 324 include aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten In addition, single metals such as titanium and alloy materials containing the above materials can be used.

  As a method for forming the films of the pads 323 and 324, vacuum deposition, sputtering, CVD, spin coating, paste printing, plating, or the like can be used.

  Through holes 121 and 122 are made of aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, titanium. A single metal such as the above and an alloy material containing the above materials can be used. As a method of forming the through holes 121 and 122, vacuum deposition, sputtering, CVD, spin coating, paste printing, plating, or the like can be used.

  The third substrate 104 in which the through holes 121 and 122 are formed can be easily manufactured by using an electrically insulating material. However, it can also be manufactured using an electrically conductive material as a base material, and the method can be applied to a portion where electrical insulation is required, for example, the junction between the first substrate 102 and the second substrate 103 in FIG. An insulating film for electrical insulation is formed under the holes 121 and 122.

  In order to form the protrusions 139 to 146 on the surface of the mass body 111, if silicon is used for the mass body 111, anisotropic wet etching using KOH or Tetramethyl-Ammonium-Hydroxide can be used. Besides this formation method, dry etching can be used, and there is an advantage that protrusions can be formed with other materials.

  A projection forming method using the thickness of the formed film can also be applied to these etching methods. For this protrusion film, aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, titanium, etc. These single metals and alloy materials containing the above materials can be used. Further, the same effect can be obtained even when the protrusion is formed on the surface of the fixed conductor 118 facing the mass body 111 instead of the mass body 111.

  When the acceleration switch 301 is manufactured, it can be manufactured using the above-described manufacturing technique using the above-described materials in accordance with the case of the acceleration switch 101.

  Below, some suitable manufacturing techniques used for manufacturing the acceleration switches 101 and 301 will be described.

  First, “embedded electrode technology” suitable for forming through holes 121, 122, 381-394 will be described.

  This “embedded electrode technology” is performed by sequentially performing the following steps (1) to (8).

  (1) First, as shown in FIG. 10, a hole 602 penetrating in the thickness direction is formed in an electrically insulating substrate 601 (corresponding to the third substrates 104 and 304). Alternatively, a hole 602 may be formed in the substrate 601 having electrical conductivity, a film having electrical insulation may be formed on the surface of the substrate 601, and the surface may be a substrate having electrical insulation.

  (2) Next, as shown in FIG. 11, a plate 603 (or tape or the like) is stretched on the substrate 601 so as to block one of the holes 602.

  (3) As shown in FIG. 12, this is immersed in the material 605 of the through hole melt | dissolved in the crucible 604 at high temperature. If the surrounding air pressure is atmospheric pressure during the immersion, the material 605 to be embedded is not filled in the hole 602 because air is left in the hole 602, and air remains.

  (4) As shown in FIG. 13, the pressure around the crucible 604 is reduced. Thereby, the air in the hole 602 expands to become a bubble 606 that can be removed, and the bubble 606 moves toward the liquid surface of the material 605 by buoyancy.

  (5) As shown in FIG. 14, the air pressure around the crucible 604 is returned to atmospheric pressure. As a result, the material 605 flows into the hole 602 and the hole 602 is filled with the material 605.

  (6) As shown in FIG. 15, when the air pressure around the crucible 604 is kept at atmospheric pressure and the inside of the crucible 604 is heated at a predetermined temperature, the joined body of the substrate 601 and the plate 603 is pulled up obliquely upward. The surface of the substrate 601 on the plate 603 side is covered with the plate 603, and the surface of the substrate 601 is electrically insulating, so that it is difficult to get wet by the material 605. If the surroundings are heated at a predetermined temperature and the material 605 is a liquid or the like, most of the excess material 605 falls from the substrate 601. Therefore, excess material 605 is unlikely to adhere to the substrate 601.

  (7) As shown in FIG. 16, the joined product of the substrate 601 and the plate 603 after being pulled up from the crucible 604 is cooled.

  (8) As shown in FIG. 17, a plate for closing one mouth of the hole 602 used to form a flat surface on one surface of the substrate 601 and to vacuum-fill the material 605 as described above. 202 is peeled off, and filling of the material 605 into the hole 602 of the substrate 601 is completed.

  As described above, the substrate 601 filled with the material 605 can be used as the third substrates 104 and 304 in which the through holes 121, 122, 381 to 394 are formed of the material 605.

  Here, a case is considered in which the joined body of the substrate 601 and the plate 603 is immersed in the material 605 dissolved in the crucible 604 in the step (3), and the surrounding air pressure is reduced in the step (4). In step (3), the pressure in the hole 602 is reduced, but the substrate 601 is electrically insulating on the surface, so that it does not get wet with the material 203 to be embedded (the electrically insulating material is generally a metal oxide) , Nitrides and carbides are used, these are called glass and ceramic materials, and as a special case, hydrocarbons, ie metal hydrogen carbides are used, these are called organic materials. The material 605 is difficult to get wet because it hardly causes a compound reaction with the material 605.) The material 605 is not filled in the hole 602 and air 607 remains. This state presents a meniscus (a shape formed by surface tension) like the air 607 shown in FIG.

  However, when the surrounding air pressure is returned to atmospheric pressure after the immersion is completed, the volume of the air 607 contracts in proportion to the ratio between the pressure in the reduced pressure state and the atmospheric pressure, and the state shown in step (5) can be achieved. Thereafter, the same process can be used.

  Candidate materials for the material 605 include aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, A single metal such as titanium and an alloy material containing the above materials are suitable.

  As a method of making a hole in the substrate 601 having electrical insulation, mechanical processing such as drilling and grinding, ultrasonic processing, electric discharge processing, atmospheric pressure plasma processing, blast processing, laser processing, electron beam processing, wet etching, ion milling Dry etching such as RIE or the like can be used.

  Candidate materials for the plate 603 that closes one entrance of the hole 602 include aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, Single metals such as vanadium, chromium, molybdenum, tungsten, titanium and alloy materials including the above materials, silicon oxide, silicon nitride, tin oxide, lead oxide, aluminum oxide, zirconium oxide, titanium oxide, iron oxide, chromium oxide, boron oxide In addition, oxides such as phosphorus oxide, alkali metal oxides, alkaline earth metal oxides, nitrides alone, and compounds containing the above materials can be used.

  The following three methods are suitable as a method of bonding the substrate 601 having electrical insulation and the plate 603 that closes one entrance of the hole 602.

(1) Method of using heat-resistant double-sided tape (2) Direct joining of mirror surfaces (3) Mechanical fastening using jigs As candidate materials for substrate 601 having electrical insulation, silicon oxide, silicon nitride, oxidation Oxides such as tin, lead oxide, aluminum oxide, zirconium oxide, titanium oxide, iron oxide, chromium oxide, boron oxide, phosphorus oxide, oxides of alkali metals, oxides of alkaline earth metals, nitrides alone and the above materials Or a compound containing aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, titanium, etc. A substrate in which the oxide or nitride film is formed on the surface of a single metal and an alloy material containing the material can be used.

  Next, “interlayer connection technology” suitable for electrically connecting the second substrate 103 (303) and the third substrate 104 (304), and the second substrate 103 (303) and the first substrate 102 (302). explain.

  This “interlayer connection technology” is performed by sequentially performing the following steps (1) to (5).

  (1) As shown in FIG. 18, a bonding film 702 made of a material having electrical conductivity for the purpose of obtaining good bonding properties on the surface of a substrate 701 having electrical conductivity corresponding to the second substrate 103 (303); 703 is formed. Further, a bonding film 712 made of a material having electrical conductivity is formed on the surface of the substrate 711 corresponding to the third substrate 104 (304) in order to obtain good bonding properties. Here, the substrate 711 needs to be electrically insulating (or the inside is electrically conductive but the surface portion is electrically insulating).

  Suitable materials for the substrate 701 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum A single metal such as tungsten and titanium, and an alloy material containing the above materials.

  Since the substrate 711 can be either electrically insulating or electrically conductive, aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, In addition to simple metals such as niobium, vanadium, chromium, molybdenum, tungsten, titanium and alloy materials containing the above materials, silicon oxide, silicon nitride, tin oxide, lead oxide, aluminum oxide, zirconium oxide, titanium oxide, iron oxide, Oxides such as chromium oxide, boron oxide, phosphorus oxide, oxides of alkali metals, oxides of alkaline earth metals, nitrides alone, and compounds containing the above materials can also be used.

  The materials of the bonding films 701, 702, 712 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, A single metal such as molybdenum, tungsten, or titanium and an alloy material containing the above materials are suitable.

  (2) Next, as shown in FIG. 19, the bonding film 703 formed on the surface of the substrate 701 and the bonding film 712 formed on the surface of the substrate 711 are bonded. The bonding method is diffusion bonding in which either the bonding film 703 or the bonding film 712 is bonded at a temperature of 50% to 100% of the melting point in terms of absolute temperature, or the bonding film 703 or the bonding film having a melting point or higher. Brazing (or soldering) that melts and joins any of 712 can be used. Reference numeral 721 denotes an integrated film after the bonding film 703 and the bonding film 712 are bonded.

  (3) As shown in FIG. 20, an unnecessary portion (portion 722) of the substrate 701 is removed by etching or the like. The methods used at this time include wet etching and dry etching. As a special method, a high-speed processing method that removes the majority by sand blasting and removes the rest by wet etching or dry etching. A method of increasing the speed of wet etching or dry etching by applying damage or stress can also be used.

  (4) As shown in FIG. 21, a bonding film 732 is formed on the surface of the substrate 731. Suitable materials for the substrate 731 are the same as those for the substrates 701 and 711, and suitable materials for the bonding film 732 are the same as those for the bonding films 702, 703, and 712.

  (5) As shown in FIG. 22, the bonding film 732 and the bonding film 702 are bonded by the same method as in the step (2). By forming the structure shown in FIG. 22, the bonding film 732 and the bonding film 721 can be electrically connected through the substrate 701 having electric conductivity.

  Next, a “back electrode extraction technique” for enabling the front surface and the back surface of the substrate to be electrically connected will be described.

  This “back electrode extraction technique” is performed by sequentially performing the following steps (1) to (5).

  (1) As shown in FIG. 23, first, a bonding film 802 made of a material having electrical conductivity is formed on the surface of a substrate 801 corresponding to the second substrate 103 (303) in order to obtain good bonding properties. Further, a bonding film 812 made of a material having electrical conductivity is formed on the surface of the substrate 811 corresponding to the third substrate 104 (304) for the purpose of obtaining good bonding properties. Here, the substrate 811 needs to be electrically conductive, and the substrate 801 needs to be electrically insulating at least on the surface portion.

  Therefore, depending on whether the substrate 801 and the substrate 811 are electrically insulating materials or electrically conductive materials, aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, In addition to single metals such as lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, titanium, and alloy materials containing the above materials, silicon oxide, silicon nitride, tin oxide, lead oxide, aluminum oxide Zirconium oxide, titanium oxide, iron oxide, chromium oxide, boron oxide, phosphorus oxide, oxides of alkali metals, oxides of alkaline earth metals, nitrides alone, and compounds containing the above materials It is desirable to select and use as appropriate.

  Suitable materials for use in the bonding film 802 and the bonding film 812 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, and tantalum. Single metal such as niobium, vanadium, chromium, molybdenum, tungsten, titanium, and alloy materials including the above materials.

  (2) As shown in FIG. 24, the bonding film 801 and the bonding film 812 are bonded to form a film 821. In this case, the bonding method is either diffusion bonding in which either the bonding film 801 or the bonding film 812 is bonded at a temperature of 50% to 100% of the melting point in terms of absolute temperature, or higher than the melting point of the material. Brazing (or soldering) in which either the film 802 or the bonding film 812 is melted can be used.

  (3) As shown in FIG. 25, an unnecessary portion (portion 822) of the substrate 801 is removed by etching or the like. The methods used at this time include wet etching and dry etching. As a special method, a high-speed processing method that removes the majority by sand blasting and removes the rest by wet etching or dry etching. A method of increasing the speed of wet etching or dry etching by applying damage or stress can also be used.

  (4) As shown in FIG. 26, a through hole 831 reaching the substrate 801 from the substrate 811 is opened. Examples of the method used at this time include mechanical processing such as cutting and grinding, ultrasonic processing, sand blast processing, atmospheric pressure plasma processing, laser processing, and electron beam processing.

  (5) As shown in FIG. 27, the electrically conductive material 832 is filled into the through hole 831. Suitable materials for use as this filler material 832 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, Examples thereof include single metals such as chromium, molybdenum, tungsten, and titanium and alloy materials containing the above materials, and conductive pastes (conductive adhesives) obtained by curing these powders with a binder material of an organic compound such as a resin. . For this filling, methods such as paste printing, vacuum printing, plating, CVD, sputtering, and vacuum deposition can be used. In particular, if the aforementioned “embedded electrode technology” is used, filling can be performed by a simple means at a low manufacturing cost.

  By using such “backside electrode extraction technology”, it is possible to easily make electrical connection to the isolated independent columns 361 to 374 in the second substrate 303.

  Next, a combination technique of the “interlayer connection technique” and the “back electrode extraction technique” described above will be described. When the “interlayer backside electrode extraction technology” which is such a combination technology is used, electrical connection can be freely made between substrates laminated in multiple layers.

  This “interlayer backside electrode extraction technique” is performed by sequentially performing the following steps (1) to (7).

  (1) First, as shown in FIG. 28, a bonding film made of a material having electrical conductivity for the purpose of obtaining good bonding properties on the surface of a substrate 901 having electrical conductivity corresponding to the second substrate 103 (303). 902 and a bonding film 903 are formed. Further, a bonding film 912 made of a material having electrical conductivity is formed on the surface of the substrate 911 corresponding to the third substrate 104 (304) in order to obtain good bonding properties. Here, at least the surface portion of the substrate 911 needs to be electrically insulating.

  Suitable materials for the substrate 901 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, These are simple metals such as titanium and alloy materials containing the above materials.

  Depending on whether the substrate 911 is an electrically insulating material or an electrically conductive material, aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium In addition to simple metals such as gallium, tantalum, niobium, vanadium, chromium, molybdenum, tungsten, titanium and alloy materials containing the above materials, silicon oxide, silicon nitride, tin oxide, lead oxide, aluminum oxide, zirconium oxide, oxidation Titanium, iron oxide, chromium oxide, boron oxide, phosphorus oxide, oxides of alkali metals, oxides of alkaline earth metals, nitrides alone and compounds containing the above materials are used as appropriate It is desirable to do.

  The materials of the bonding films 902, 903, and 912 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, chromium, A single metal such as molybdenum, tungsten, or titanium and an alloy material containing the above materials are suitable.

  (2) Next, as shown in FIG. 29, the bonding film 903 and the bonding film 912 are bonded to form a film 921. The bonding method is either diffusion bonding in which either the bonding film 903 or the bonding film 912 is bonded at a temperature of 50% to 100% of the melting point in terms of absolute temperature, or either the bonding film 903 or the bonding film 912. It is possible to use brazing (or soldering) in which the metal is heated to its melting point or higher to be melted.

  (3) As shown in FIG. 30, an unnecessary portion (portion 922) of the substrate 901 is removed by etching or the like. The methods used at this time include wet etching and dry etching. As a special method, a high-speed processing method that removes the majority by sand blasting and removes the rest by wet etching or dry etching. A method of increasing the speed of wet etching or dry etching by applying damage or stress can also be used.

  (4) As shown in FIG. 31, a bonding film 932 is formed on the surface of the substrate 931. Suitable materials for the substrate 931 are the same as those for the substrates 901 and 911, and suitable materials for the bonding film 932 are the same as those for the bonding films 902, 903, and 912.

  (5) As shown in FIG. 32, the bonding film 932 and the bonding film 902 are bonded by the same method as in the step (2). By forming the structure shown in FIG. 32, the bonding film 932 and the bonding film 921 can be electrically connected through the substrate 901 having electrical conductivity.

  (6) As shown in FIG. 33, a through hole 931 reaching the substrate 901 from the substrate 911 is opened. Examples of the method used at this time include mechanical processing such as cutting and grinding, ultrasonic processing, sand blast processing, atmospheric pressure plasma processing, laser processing, and electron beam processing.

  (7) As shown in FIG. 34, the electrically conductive material 932 is filled into the through hole 931. Suitable materials for use as this filler material 932 are aluminum, gold, silver, copper, platinum, palladium, nickel, iron, silicon, germanium, tin, lead, bismuth, indium, gallium, tantalum, niobium, vanadium, Examples thereof include single metals such as chromium, molybdenum, tungsten, and titanium and alloy materials containing the above materials, and conductive pastes (conductive adhesives) obtained by curing these powders with a binder material of an organic compound such as a resin. . For this filling, methods such as paste printing, vacuum printing, plating, CVD, sputtering, and vacuum deposition can be used.

It is the perspective view seen from the upper surface side explaining the structure of the acceleration switch which is one Embodiment of this invention. It is the perspective view seen from the lower surface side explaining the structure of the same acceleration switch. It is a III-III cut sectional view of the acceleration switch. It is a circuit diagram of the electronic device provided with the same acceleration switch. It is the perspective view seen from the upper surface side explaining the structure of the acceleration switch which is another embodiment of this invention. It is the perspective view seen from the lower surface side explaining the structure of the same acceleration switch. It is a VII-VII cut sectional view of the acceleration switch. It is a circuit diagram of the electronic device provided with the same acceleration switch. It is a circuit diagram of a part of the electronic device. It is explanatory drawing of the process (1) of "embedded electrode technique". It is explanatory drawing of the process (2) of "embedded electrode technique". It is explanatory drawing of the process (3) of "embedded electrode technique". It is explanatory drawing of the process (4) of "embedded electrode technique". It is explanatory drawing of the process (5) of "embedded electrode technique". It is explanatory drawing of the process (6) of "embedded electrode technique". It is explanatory drawing of the process (7) of "embedded electrode technique". It is explanatory drawing of the process (8) of "embedded electrode technique". It is explanatory drawing of the process (1) of "interlayer connection technology". It is explanatory drawing of the process (2) of "interlayer connection technology". It is explanatory drawing of the process (3) of "interlayer connection technology". It is explanatory drawing of the process (4) of "interlayer connection technology". It is explanatory drawing of the process (5) of "interlayer connection technique". It is explanatory drawing of the process (1) of "back surface electrode extraction technology". It is explanatory drawing of the process (2) of "back surface electrode extraction technology". It is explanatory drawing of the process (3) of "back surface electrode extraction technology". It is explanatory drawing of the process (4) of "back surface electrode extraction technology". It is explanatory drawing of the process (5) of "back surface electrode extraction technology". It is explanatory drawing of the process (1) of "interlayer back surface electrode extraction technology". It is explanatory drawing of the process (2) of "interlayer back surface electrode extraction technology". It is explanatory drawing of the process (3) of "interlayer back surface electrode extraction technology". It is explanatory drawing of the process (4) of "interlayer back surface electrode extraction technology". It is explanatory drawing of the process (5) of "interlayer back surface electrode extraction technology." It is explanatory drawing of the process (6) of "interlayer back surface electrode extraction technology". It is explanatory drawing of the process (7) of "interlayer back surface electrode extraction technology". It is a longitudinal cross-sectional view of the acceleration switch which is another embodiment of this invention. It is a top view of the 2nd board | substrate of the same acceleration switch.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Acceleration switch 102 1st board | substrate 103 2nd board | substrate 104 3rd board | substrate 111 Mass body 112,113 Beam 121,122 Conductive material 131-146 Contact 201 Electronic device 202 Circuit 301 Acceleration switch 302 1st board 303 2nd board 304 2nd board 3 substrate 311 mass body 312,313 beam 321,381-394 conductive material 401-414 contact 501 electronic device 504 circuit 1001 acceleration switch 1002 first substrate 1003 second substrate 1004 third substrate 1014 mass body 1012, 1013 beam

Claims (9)

Mass body,
A beam that supports the mass body and is deflected by an inertial force applied to the mass body when subjected to acceleration, and in a state without this deflection, a beam whose axial direction forms a curve on the same plane;
A plurality of contact points that are electrically conductive and are provided on a member disposed on the surface of the mass body and on the other side in the vicinity of the mass body, and the pair contacts each other by bending of the beam; ,
Acceleration switch equipped with.   The plurality of sets of contacts correspond to a case where predetermined XYZ coordinate axes orthogonal to each other are set on the space, and the mass body is displaced in each of the positive direction and the negative direction in each axial direction. The acceleration switch according to claim 1, further comprising at least one of each. The plurality of sets of contacts are:
At least any two of these are contacts for detecting acceleration in the positive or negative direction in the Z-axis direction, or the positive or negative direction in the Y-axis direction, and are arranged on both sides of the X-axis. Has been
At least any two of the contacts are for detecting acceleration in the positive or negative direction in the Z-axis direction, or in the positive or negative direction in the X-axis direction, and are arranged on both sides of the Y-axis. Has been
At least any two of them are contacts for detecting acceleration in the positive direction or negative direction in the X-axis direction, or in the positive direction or negative direction in the Y-axis direction, and are arranged on both sides of the Z-axis. Being
The acceleration switch according to claim 2.   The acceleration switch according to claim 1, wherein the plurality of sets of contacts are connected in parallel.   The acceleration switch according to claim 1, wherein the plurality of sets of contacts are insulated from each other.   The acceleration switch according to claim 1, wherein the beam is a cantilever beam.   The acceleration switch according to any one of claims 1 to 5, wherein the beam is a doubly supported beam. It has a plurality of superposed substrates,
The mass body and the beam are formed on any one of the plurality of substrates,
At least one of the plurality of substrates includes
A hole penetrating the substrate in the thickness direction;
A conductive material that is electrically connected between both surfaces of the substrate filled in the hole and provided with the hole;
Is provided,
The acceleration switch according to any one of claims 1 to 7. The acceleration switch according to any one of claims 1 to 7,
A detection signal output from the acceleration switch is input, and a circuit that performs a predetermined operation according to the detection signal;
An electronic device comprising: