JP2006331742A - Electromechanical switch - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electromechanical switch capable of responding to switching at a high speed with a low drive voltage. <P>SOLUTION: An electromechanical switch body 10, which is a MEMS switch has a first movable electrode 14 and a second movable electrode 16 having both ends fixed and installed by a first anchor 12 and a second anchor 13 formed on a silicon substrate 2, and a fixed electrode 18 facing these movable electrodes. A first electromechanical switch 22, drivable by a low voltage, is composed of the first movable electrode 14 and the fixed electrode 18. A second electromechanical switch 24 capable of latching by low voltage is constituted of the second movable electrode 16 and the fixed electrode 18. By connecting them in parallel with each other and by alternately driving them, the first electromechanical switch waits in an off-state when the first electromechanical switch is in an on-state; and the second electromechanical switch is brought into the on-state, after the first electromechanical switch goes into the off-state by displacement of a first beam, whereby a signal can be switched over rapidly. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a micro electromechanical systems switch (hereinafter referred to as “MEMS switch”), and more particularly to an electromechanical switch for enabling a high-speed response at a low driving voltage.

The main RF switch (Radio Frequency Switch) is currently a semiconductor RF switch such as a HEMT, MESFET, or PIN diode using a GaAs substrate.
However, in order to achieve higher performance and lower power consumption of wireless terminals, it has been proposed to use not only conventional semiconductor elements but also devices using minute electromechanical elements.

  This is an electromechanical switch that turns signals on and off by driving minute electrodes with an electrostatic force or the like and mechanically controlling the relative distance between the electrodes. Since the electrodes are in electrical contact when they are on, the loss between the electrodes is extremely small, and a low-loss switch can be realized.

In particular, RF switches applied to the front end of wireless terminals are required to have low loss and low power consumption. Therefore, devices using such micro electromechanical elements are expected as useful solutions. .
Many types of switches have been devised as switches using conventional electromechanical elements, and most of them are covered in Non-Patent Document 1.

  For example, a switch using RFMEMS (Radio Frequency Microelectoromechanical Systems) described in Non-Patent Document 1 includes one movable electrode and one fixed electrode, and a DC is used as a drive control voltage between the movable electrode and the fixed electrode. When a voltage is applied, an electrostatic force is generated, and the movable electrode is drawn into the fixed electrode using the electrostatic force as a driving force. The electrode comes into physical contact with the input signal from the input terminal on the movable electrode side. The signal is coupled to the output terminal.

As a coupling method, there are a resistance coupling method in which metal and metal are in direct contact and a capacitive coupling method in which a metal is capacitively coupled through an insulator, both of which enable low-loss coupling.
When the drive control voltage applied between the electrodes is set to 0, the electrostatic force is eliminated, and the movable electrode returns to the original position using the spring force of the movable electrode as a driving force. At this time, since the distance between the movable electrode and the fixed electrode is sufficiently large, the capacitance value between the electrodes is also small, and since capacitive coupling is not performed, signals coupled between the electrodes can be shielded.

  Thus, if the distance between the electrodes is sufficient, sufficient isolation can be ensured and the loss can be extremely reduced. Therefore, the electrical characteristics are very excellent as compared with the conventional RF switch using a semiconductor.

Further, there is a proposal of Patent Document 1 as this type of MEMS switch.
In the MEMS switch described in Patent Document 1, the first, second, and third beams arranged at slightly spaced intervals from each other for the purpose of reducing the response time and the applied voltage, and the like. Voltage application means for applying electric power, and is configured to change the position of each beam, that is, the capacitance between the beams by electrostatic force, and by moving both the first beam and the second beam. In order to enable the beams to be electrically coupled at a higher speed and to be turned off at a higher speed, an electrostatic force is generated in the third beam facing the second beam, and the first and second beams are It is shown that a strong electrostatic force can be applied between the second and third beams by approaching in advance, and the response is faster.

  Furthermore, it has been shown that by providing the beam with the same shape, the change in the pull-in voltage corresponding to the change in the internal stress of the beam can be reduced, and the capacitance change between the beams due to the distortion of the beam can also be reduced.

Gabriel M. Rebeiz, "RF MEMS THEORY, DESIGN, AND, TECHNOLOGY", published by John Wiley & Sons, February 1, 2003, p.122 JP 2004-111360 A (pages 5 to 6, FIG. 1, FIG. 3 and FIG. 3)

  However, in the MEMS switch shown in Non-Patent Document 1, since a movable electrode having a finite mass is moved using an electrostatic force as a driving force, a strong electrostatic force is required, and the response time when the switch is turned on / off is also conventionally known. In the switch using the semiconductor element, the response time of the MEMS switch is several tens of μs or more compared to the nanosecond (ns) order, and there is a problem that the response time is extremely slow.

  For example, Non-Patent Document 1 summarizes the drive voltage and response time of electromechanical switches that have already been published. The earliest response time is 4 μs, but an extremely high voltage of 40 V or more is applied to realize this (Non-Patent Document 1, p. 16).

  When a MEMS switch is applied to a wireless communication terminal, the driving voltage is limited and must be driven at several volts or less. Depending on the wireless system to be applied, for example, in a wireless LAN system or the like, it may be required to turn on and off in an extremely short time of 0.2 μs, but in the example shown in Non-Patent Document 1, it is about 4 μs. At rest.

  In addition to limiting the drive voltage of a wireless communication terminal that requires low power operation, it is necessary to increase the distance between the electrodes in order to ensure the desired isolation, but it is inevitable that the distance between the electrodes is large. This is based on the slow response time.

Furthermore, the electrostatic force is used when the movable electrode of the MEMS switch is pulled into the fixed electrode. However, when the movable electrode is pulled away, the spring force of the movable electrode is used as the driving force. If it is going to be made the same, it is necessary to make the spring force of a movable electrode into a magnitude beyond a certain level. If the spring force as the driving force is increased, an electrostatic force must be applied against the spring force when the movable electrode is pulled in, so that a larger driving voltage is inevitably required.
Therefore, the MEMS switch shown in Non-Patent Document 1 has a problem that the drive voltage is extremely high.

  Moreover, in the example shown in Patent Document 1, all the beams are made movable to enable high-speed switching and operation with a low drive voltage. The demand is growing.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide an electromechanical switch capable of high-speed switching response with a low driving voltage.

In order to achieve the above object, the electromechanical switch of the present invention is a MEMS switch that is connected to a switch that can be driven at high speed in parallel, and when one is in a driving state, the other is in a standby state and sequentially driven. Driving is possible.
That is, a plurality of electromechanical switches that are turned on / off based on the displacement of the beam are connected in parallel, and when at least one of the electromechanical switches is in an on state, the rest of the electromechanical switch farm is on standby in an off state Then, after the electromechanical switch that is in the on state is turned off due to the displacement of the beam, the electromechanical switch that has been waiting in the off state is turned on.
For example, a first electromechanical switch that is turned on / off based on the displacement of the first beam and a second electromechanical switch that is turned on / off based on the displacement of the second beam are connected in parallel.
When the first electromechanical switch is in the on state, the second electromechanical switch waits in the off state, and after the first electromechanical switch is in the off state due to the displacement of the first beam The second electromechanical switch is turned on.

With this configuration, an electromechanical switch capable of high-speed driving is provided by a plurality of electromechanical switches (for example, the first electromechanical switch and the second electromechanical switch) alternately switching at high speed. can do.
Furthermore, since mechanical switching operation is performed, high isolation can be ensured with low loss.

Furthermore, the electromechanical switch of the present invention includes a plurality of electromechanical switches that are connected in parallel to each other and sequentially turned on and off at different timings, and one electromechanical switch is in an on state. Others include those configured to wait in an off state and sequentially turn on.
With this configuration, one or more electromechanical switches are always in a standby state and sequentially driven to enable high-speed driving.

Furthermore, the electromechanical switch of the present invention is turned on at high speed from the initial state when the beam is displaced at high speed by applying or releasing the driving force and the electromechanical switch is turned on in response to high speed. Including things.
With this configuration, the on-response of mechanical switching can be speeded up.

In the electromechanical switch of the present invention, at least one of the displacements of the beam is based on an electrostatic force.
The electromechanical switch of the present invention includes one in which at least one of the displacement of the beam is based on electromagnetic force.
In the electromechanical switch of the present invention, at least one of the displacements of the beam is based on piezoelectricity.
The electromechanical switch of the present invention includes one in which at least one of the displacements of the beam is based on thermal expansion.
With this configuration, the beam can be displaced with low power operation.

Furthermore, the electromechanical switch of the present invention includes a first electromechanical switch having a first beam and a second electromechanical switch having a second beam, and the first beam and the second beam. Each of the beams has a common fixed electrode facing in parallel through a gap, and the fixed electrode and the first beam constitute a first electromechanical switch, and the fixed electrode and the second beam And those constituting the second electromechanical switch.
With this configuration, the operating speed at which the first beam and the second beam are electrically coupled to the fixed electrode can be adjusted to different ones, and double pole double throw switching is possible.

The electromechanical switch of the present invention includes a switch provided with a gap with the fixed electrode based on the maximum amplitude of each natural vibration of the first beam and the second beam.
With this configuration, the operating speeds of the first electromechanical switch and the second electromechanical switch can be set differently, and isolation can be ensured.

The electromechanical switch of the present invention includes one that is turned on only when the first electromechanical switch is on and the second electromechanical switch is on.
With this configuration, the electromechanical switch is turned on only by turning on the first electromechanical switch when the first beam is displaced at high speed from the initial state, so that an on-response can be made at high speed.

The electromechanical switch of the present invention includes one in which the beam is any one of a piezoelectric element, a shape memory alloy, a bimorph element, and an electrostrictive element, or a plurality of beams are a combination thereof.
With this configuration, each beam can be operated with low power, and the operating voltage can be lowered.

Further, the electromechanical switch of the present invention brings the second beam closer to the third beam by the mechanical probe when any displacement of the first beam, the second beam, and the third beam is eliminated. In this case, the third beam is displaced by latching the second beam by applying or releasing the driving force.
With this configuration, the second beam is displaced and approaches the third beam without applying a voltage, so that the third beam can be operated with low power.

Further, the electromechanical switch of the present invention includes one that is placed in either an environment where the atmospheric pressure is different from the atmospheric pressure or an environment filled with dry helium.
With this configuration, it is possible to suppress the influence of a fluid such as air on the beam that operates at high speed and reduce the damping effect.

  In the electromechanical switch of the present invention, a plurality of switches that can be driven at a high speed are connected in parallel, and when one is in a driving state, the other is in a standby state, thereby operating at a low driving voltage by sequentially driving at a high speed. And can be turned on / off at high speed.

  The electromechanical switch of the present invention is an electromechanical switch installed under reduced pressure or in a helium gas atmosphere as an environment in which a damping effect such as air viscosity is sufficiently weakened. The first and second electromechanical switches are connected in parallel. When the first electromechanical switch is in the on state, the second electromechanical switch waits in the off state, and the first electromechanical switch After the first electromechanical switch is turned off due to the displacement of the beam, the second electromechanical switch is turned on so that signals can be switched at high speed.

  In the first and second electromechanical switches, when the signal is shielded, the movable electrode is separated for a moment, but the movable electrode vibrates with natural vibration due to strong spring force and weak damping effect. Again, it returns to the vicinity of the initial position. Therefore, the second electromechanical switch having a movable electrode having a strong spring force can be latched with a minute voltage.

  As described above, the electromechanical switch of the present invention is a switch using minute electromechanical elements, and the first and second electromechanical switches are placed in a standby state when one is driven and combined with each other. Signals can be turned on and off at high speed with the drive voltage.

  Hereinafter, preferred embodiments of an electromechanical switch according to the present invention will be described in detail with reference to the drawings. In the drawings, the same reference numerals are used for substantially the same or corresponding members.

(Embodiment 1)
FIG. 1 is an external configuration diagram showing one unit element of an electromechanical switch according to the first embodiment.
FIG. 2 is a partial cross-sectional view of a main part configuration of the first electromechanical switch and the second electromechanical switch according to the first embodiment.
1 and 2, the electromechanical switch 1 according to the first embodiment includes an electromechanical switch body 10 formed on a silicon substrate 2 and covered with a sealing cover glass 3, and a first electrode terminal serving as an input / output terminal. 4, a second electrode terminal 5, a third electrode terminal 6, a fourth electrode terminal 7, a fifth electrode terminal 8, and a sixth electrode terminal 9.

  In FIG. 2, the electromechanical switch body 10 includes a first movable electrode 14 and a second movable electrode 16 that are fixed and mounted at both ends by a first anchor 12 and a second anchor 13 formed on the silicon substrate 2. Connection lines 21 and 22 for connecting signals between the first movable electrode 14 and the second movable electrode 16 on the first anchor and the first anchor, and connection lines 21 and 22, the first movable electrode 14, and the second movable electrode 16 are provided. An insulating film (not shown) for preventing DC connection, and a fixed electrode 18 formed by facing the first movable electrode 14 and the second movable electrode 16 with a predetermined gap therebetween. Have. At this time, the area and the thickness of the insulating film are determined so that the capacitance formed between the movable electrode and the connection line via the insulating films 20 and 23 has a sufficiently small impedance with respect to the frequency of the signal input to the switch. It has been.

Each movable electrode can be independently applied with a control signal via terminals (7, 8, 4, 5), and the control signal to be applied to the first movable electrode is the first control signal, A control signal applied to the second movable electrode is a second control signal.
Further, the insulating film formed between the connection line and the movable electrode may be provided for either one of the movable electrodes, and is not necessarily provided for both of the movable electrodes.

In the first embodiment, the first movable electrode 14 and the second movable electrode 16 are configured as doubly supported beams.
The first movable electrode 14 and the fixed electrode 18 constitute a first electromechanical switch 501, and the second movable electrode 16 and the fixed electrode 18 constitute a second electromechanical switch 502, which are connected in parallel. Yes.

The first movable electrode 14 and the second movable electrode 16 inherently vibrate due to the electrostatic force based on the applied voltage and the elastic force of these movable electrodes themselves, but a gap having a maximum amplitude or more is secured.
The air gap is filled with dry helium in order to reduce the damping effect, or kept in a vacuum.

The input / output terminals of the first movable electrode 14 are the first electrode terminal 4 and the fifth electrode terminal 8, and the input / output terminals of the second movable electrode 16 are the second electrode terminal 5 and the fourth electrode terminal 4. The third electrode terminal 6 and the sixth electrode terminal 9 are the electrode terminals 7 and the input / output terminals of the fixed electrode 18.
For example, if the fifth electrode terminal 8 of the first movable electrode 14 is an input terminal, the terminals 6 and 9 of the fixed electrode 18 are output terminals.
Naturally, since the first movable electrode and the second movable electrode are electrically connected by the connection lines 21 and 22, the signal input to the first movable electrode terminal 8 is also applied to the terminal 7 of the second movable electrode 16. .
That is, the two switches are connected in parallel.
A control voltage source for applying an electrostatic force between the first movable electrode 14 and the second movable electrode 16 and the fixed electrode 18 can be connected to each electrode terminal.

3 is a cross-sectional view taken along the line AA shown in FIG.
2 and 3, the length L of the first movable electrode 14 and the second movable electrode 16 is 400 μm, the width W is 5 μm, the thickness D is 0.4 μm, and the gap between the fixed electrode 18 and the electrode is 0.2 μm. The capacitance area between the movable electrode formed on the anchor and the connection line is set to 100 μm square, respectively.

FIG. 4 is an equivalent circuit diagram of the electromechanical switch of the present invention.
As shown in FIG. 4, an electromechanical switch 50 according to the present invention includes a first electromechanical switch 501 and a second electromechanical switch 502, and the movable electrode has a strong spring force and is displaced at a high speed. That is, the electromechanical switch 50 is composed of two parallel first electromechanical switches 501 and 502, and the first electromechanical switch 501 or the second electromechanical switch is in the ON state. If there is, the switch 50 is turned on. When both the first electromechanical switch and the second electromechanical switch are turned off, the switch 50 is turned off.

The operation method will be described with reference to FIG.
FIG. 5 shows the relationship between the electrode positions of the switches 501 and 502 and the output signal. In the drawing, the output signal is in the on state when it is at the top, and the output signal is in the off state when the electrode position is in the downward direction.

A switching operation for obtaining an output signal as shown in FIG. 5 will be described.
The switching operation from the on state to the off state will be described. At time 0, the switch 50 is turned on. The first electromechanical switch 501 that is the two electromechanical switches constituting the switch 50 is turned off, and the second electromechanical switch 502 is turned on. If the control signal 1 is applied to the first electromechanical switch 501 at time 0, the movable electrode 14 of the first electromechanical switch 501 is displaced in the direction of the fixed electrode 18, contacts the fixed electrode at time t1, and the electrostatic force Is latched by. While the signal is turned off (time t2−time t1), the control signal 1 is applied. Further, at the moment when the movable electrode 14 of the first electromechanical switch comes into contact, the control signal of the second electromechanical switch is set to 0 and the second movable electrode 12 is released. The movable electrode 12 is displaced to the OFF state by time t2 by its own spring force.
At time t2, the second control signal of the second electromechanical switch is applied to displace the movable electrode 12 to the fixed electrode 18, and the control signal 1 of the movable electrode 14 of the first electromechanical switch is set to 0, The movable electrode 14 is released. At time t3, the movable electrode 14 is turned off, the movable electrode 12 is latched by the fixed electrode, and the switch 50 is turned on again.

  In order to keep the on state in this way, it is sufficient that either one of the switches is in the on state. Therefore, in preparation for the next switching, only one switch is held in the on state, and the other switches are not used. Wait in the off state.

The electromechanical switch described above does not necessarily need to be driven by an electrostatic force, and for example, electromagnetic force, heating using a heat source, a piezoelectric element, or the like may be used as the driving force.
It can also be used for DPDT (Dual Pole Double Throw) switches for antenna diversity such as wireless LANs that require switching at high speed.

Next, a method for manufacturing the electromechanical switch of the first embodiment will be described.
FIG. 6 is an external view of a silicon substrate forming one unit element of an electromechanical switch.
A silicon substrate 2 shown in FIG. 6 is formed by applying a resist film to a silicon substrate, exposing with a predetermined mask pattern, developing etching, removing the resist film, and forming a predetermined shape.

  The silicon substrate 2 has a pair of first recesses 82 for fixing and mounting the first movable electrode, a pair of second recesses 84 for fixing and mounting the second movable electrode 16, and a fixed electrode terminal. A pair of third recesses 86 for taking out and a fourth recess 88 for forming the fixed electrode 18 are formed.

FIG. 7 is an external view of the sealing cover glass.
The sealing cover glass 3 is plate-shaped and has a pair of protrusions 92, 94, and 96 corresponding to the first recess 82, the second recess 84, and the third recess 86 of the silicon substrate 2.

FIGS. 8A to 8E are manufacturing process diagrams of this electromechanical switch, and FIG. 8A is a cross-sectional view corresponding to the line B-B in FIG. 6, and each manufacturing process is the same as (a). It is sectional drawing which shows a cross section.
First, an Al layer is deposited on the silicon substrate 2 by vacuum evaporation or sputtering, a resist film having a predetermined pattern is applied, and the Al layer is wet-etched or dry-etched using the resist film as a mask, and the fixed electrode 18 and the third electrode Terminal 6 and sixth electrode terminal 9 are formed (see FIGS. 2 and 8B).

  Next, a sacrificial layer 102 is formed with a resist (see FIG. 8C), an Al layer is deposited thereon by sputtering, and then the Al layer is dry-etched by ECR plasma using the resist film 104 having a predetermined pattern as a mask. The first movable electrode 14 and the second movable electrode 16 are formed (see FIG. 8D).

  Then, the resist film 104 and the sacrificial layer 102 are removed by plasma ashing to form a beam structure of the first movable electrode 14 and the second movable electrode 16, and the sealing cover glass 3 is formed in the decompression device or the helium filling device. After the alignment with the silicon substrate 2 at the protrusion, the sealing cover glass 3 and the silicon substrate 2 are anodically bonded (see FIG. 8 (e)).

In this way, a thin beam-like beam structure such as the first movable electrode 14 and the second movable electrode 16 can be formed, and the gap around each movable electrode that operates at high speed is decompressed or dried helium. Electromechanical switches filled with can be manufactured.
Further, although aluminum is taken as an example of the movable electrode, other metal materials such as Mo, Ti, Au, and Cu may be used instead of Al, and conductive materials may be used.
Further, the movable electrode may be a beam structure in which a metal is deposited on the surface of a plate-like silicon with a nanometer size, and may further be a piezoelectric element, a shape memory alloy, an electromagnetic strain element, or a bimorph element utilizing a bimorph effect.

  In the parallel plate type and the comb type, the movable electrode is drawn into the fixed electrode side formed on the substrate by the electrostatic force, but may be structured to operate in the horizontal direction with respect to the substrate.

(Embodiment 2)
Next, a second embodiment will be described.
In the first embodiment, an example in which two electromechanical switches are connected in parallel has been described. In the present embodiment, an example in which four electromechanical switches are connected in parallel will be described.
Here, t _on _min = t _off _min = 0.5 μS, and the switching time ts of the single switch at that time is 2 μS. By arranging four electromechanical switches in parallel, the response at 0.5 μS is obtained. Is possible.

  The operation will be described with reference to FIG. FIG. 9 is a schematic configuration diagram of a switch, which includes four switches 503, 504, 505, and 506. The operation switching time of each switch, that is, the time until the electrode moves and is latched from the on side to the off side requires 2 μs. However, it moves within the gap 0.5 μS required to obtain the desired isolation.

In FIG. 9, it is assumed that the device is turned on at time 0, turned off at time 1, and turned on again at time 2. Time 1 to time 2 is the minimum on-time, and time 2 to time 3 is the minimum off-time. At time 1, only the switch 504 is in the on state and is latched on the on side, but the switches 503, 505, and 506 are not latched on either the on side or the off side, and each moves in preparation for the next on state. ing. If the ON-side latch of the switch 504 is released at time 2 and the electrode is moved to the OFF side, and the OFF-side latch is released in advance so that the electrode of the switch 505 is on the ON side at time 3, the time 3 Thus, the electrode of the switch 505 is latched to the on side, and the switch is turned on. By performing this operation in the same manner using the switch 503,506, t _on _min, the switching operation at t _off _min possible.
In this way, high speed operation is possible.

  The electromechanical switch of the present invention is connected to a plurality of electromechanical switches in parallel, and operates at a low driving voltage and is turned on and off at high speed by adjusting the driving timing so that the other is in a standby state when one is driven. Can be useful for RFMEMS switches.

2 is an external configuration diagram showing one unit element of the electromechanical switch in Embodiment 1. FIG. FIG. 3 is a partial cross-sectional view of a main part configuration of a first electromechanical switch and a second electromechanical switch according to Embodiment 1. It is AA sectional drawing shown in FIG. FIG. 2 is an equivalent circuit diagram of the electromechanical switch according to the first embodiment. FIG. 3 is a diagram illustrating an operation of the electromechanical switch according to the first embodiment. It is an external view of the silicon substrate which forms one unit element of an electromechanical switch. It is an external view of a sealing cover glass. FIG. 10 is a manufacturing process diagram of the electromechanical switch according to the first embodiment, and each manufacturing process is a cross-sectional view corresponding to the line BB in FIG. 9; 6 is an equivalent circuit diagram of an electromechanical switch according to a second embodiment. FIG.

Explanation of symbols

1, 40, 70, 200 Electromechanical switch 2 Silicon substrate 3 Sealing cover glass 4 First electrode terminal 5 Second electrode terminal 6 Third electrode terminal 7 Fourth electrode terminal 8 Fifth electrode terminal 9 Sixth electrode terminal 10 Electricity Mechanical switch body 12, 72 First anchor 13, 73 Second anchor 14, 74 First movable electrode 16, 76 Second movable electrode 18, 62, 66, 78 Fixed electrode 501 First electromechanical switch 502 Second electric Mechanical switch 60 Parallel plate type 64, 68 Movable electrode 69 Comb die 82 First recess 84 Second recess 86 Third recess 88 Fourth recess 92, 94, 96 Protrusion 102 Sacrificial layer 104 Resist film 206 Second movable electrode

Claims (8)

A plurality of electromechanical switches that are turned on and off based on the displacement of the beam are connected in parallel.
When at least one of the electromechanical switches is in an on state, the rest of the electromechanical switches wait in an off state, and after the electromechanical switch that has been in the on state is turned off due to displacement of the beam An electromechanical switch in which the electromechanical switch waiting in an off state is turned on. The electromechanical switch according to claim 1,
The electromechanical switch is composed of a plurality of electromechanical switches connected in parallel to each other and sequentially turned on and off at different timings. When one electromechanical switch is on, the other waits in the off state, An electromechanical switch configured to turn on sequentially. The electromechanical switch according to claim 1,
One of the electromechanical switches is turned on at high speed from the initial state when the beam is displaced at high speed by applying or releasing driving force and the electromechanical switch is turned on in response to high speed. An electromechanical switch configured to be The electromechanical switch according to claim 1,
An electromechanical switch, wherein at least one of the displacement of the first beam and the displacement of the second beam is based on an electrostatic force. The electromechanical switch according to claim 1,
An electromechanical switch, wherein at least one of the displacement of the first beam and the displacement of the second beam is based on electromagnetic force. The electromechanical switch according to claim 1,
An electromechanical switch, wherein at least one of the displacement of the first beam and the displacement of the second beam is due to a piezoelectric effect. The electromechanical switch according to claim 1,
An electromechanical switch, wherein the displacement of the at least one second beam is due to thermal expansion. The electromechanical switch according to claim 1,
The electromechanical switch includes a first electromechanical switch having a first beam and a second electromechanical switch having a second beam, and the first beam and the second beam are interposed via a gap. A common fixed electrode facing in parallel is provided, the fixed electrode and the first beam constitute the first electromechanical switch, and the fixed electrode and the second beam constitute the second electrode. Electromechanical switch that constitutes the electromechanical switch.

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