JP2006329816A - Probe inspection device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe inspection device capable of adjusting properly a measuring condition of an element at a measuring time. <P>SOLUTION: This device includes a probe 40 for measuring an output from an output terminal of the element formed on the first surface of a substrate, a contact part 44 capable of adjusting an operation environment of the element from the second surface side on the opposite side to the first surface of the substrate, and a substrate support mechanism 48 for supporting the substrate. The problem can be solved by enabling change of a relative position of the substrate relative to the probe 40. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe inspection apparatus for performing a probe inspection.

  Probe inspection devices that measure the characteristics of semiconductor elements formed on semiconductor wafers are widely used. In the conventional probe inspection apparatus, a wafer is placed on a wafer chuck, and the probe of the measurement unit disposed above the wafer and the electrode of the element formed on the wafer are brought into electrical contact with each other to thereby improve the electrical characteristics of the element. taking measurement.

  The wafer chuck is often provided with an XY stage. The wafer placed on the wafer chuck can be moved in the X direction and the Y direction by the XY stage. Further, the wafer chuck may be provided with a lifting mechanism. By the lifting mechanism, the wafer placed on the wafer chuck together with the XY stage can be moved in the Z direction.

  As shown in FIG. 8, a vacuum suction groove 12 is provided on the mounting surface A on which the wafer of the wafer chuck 10 is mounted. The groove 12 is provided with several vacuum suction holes 14. By performing vacuum suction from the vacuum suction hole 14 using a vacuum pump or the like, the wafer placed on the placement surface A is surely chucked by the wafer chuck 10.

JP-A-7-263526 JP 2001-230308 A “PRODUCTS”, [online], SHELLCASE, [October 1, 2002 search], Internet <URL http://www.shellcase.com/pages/products-shellOP-process.asp>

  A solid-state imaging device in which a plurality of photoelectric conversion elements are formed in a matrix on the surface of a semiconductor wafer is used for an electronic camera or an electronic video. In response to a demand for downsizing of the device, the solid-state imaging device can be formed as a chip size package (CSP) as shown in FIG.

  A photoelectric conversion element is formed on the surface of the semiconductor substrate 20. The surface of the semiconductor substrate 20 is covered with a transparent first support base 22, and the first support base 22 is bonded to the surface of the semiconductor substrate 20 with an insulating resin 26. A second support base 24 is bonded to the back surface of the semiconductor substrate 20 with an insulating resin 27. The semiconductor chip 20 is enhanced in structural strength by the first and second support bases 22 and 24 and is protected from contamination from the outside. A plurality of ball-shaped terminals 28 are provided on the outer surface of the second support base 24. The ball terminal 28 is connected to the internal wiring of the semiconductor circuit formed on the surface of the semiconductor substrate 20 and the external wiring 30. That is, the ball terminal 28 becomes an external terminal of a semiconductor circuit formed on the surface of the semiconductor substrate 20.

  When measuring the characteristics of a solid-state imaging device to which such CSP is applied, the front surface side of the semiconductor substrate 20 on which the photoelectric conversion element is formed is adsorbed by a wafer chuck, and a ball-shaped terminal provided on the back surface side of the semiconductor substrate 20 The probe is applied to 28 and measurement is performed. At this time, in order to measure the imaging characteristics of the solid-state imaging device, the mounting surface of the wafer chuck is formed of a transparent material, and measurement is performed while irradiating the photoelectric conversion device provided on the surface of the semiconductor substrate 20 with light. There is a need.

  However, in the conventional probe inspection apparatus, it is necessary to provide a vacuum chucking groove on the mounting surface of the wafer chuck as described above, so that light transmitted through the mounting surface is irregularly reflected and the light receiving surface of the solid-state imaging device. There was a problem that a shadow was formed on the screen and the light could not be irradiated uniformly.

  Further, the transparent material such as glass and plastic constituting the wafer chuck is difficult to process the shape, and it is difficult to provide a vacuum suction groove and a vacuum suction hole.

  In some cases, a Peltier element or the like is mounted on the wafer chuck in order to heat or cool the temperature of the element formed on the semiconductor substrate. However, the heat transfer to the semiconductor substrate placed by the vacuum chucking groove of the wafer chuck becomes non-uniform, and there is a problem that the temperature of the element cannot be adjusted uniformly.

  An object of the present invention is to provide a probe inspection apparatus that can solve at least one of the above-described conventional techniques.

  The present invention is a probe inspection apparatus used for measuring characteristics of an element formed on a substrate, and includes a probe for measuring an output from an output terminal of an element formed on the first surface of the substrate. Measuring means; environmental adjusting means capable of adjusting the operating environment of the element from the second surface side opposite to the first surface of the substrate; and substrate support means for supporting the substrate; The relative position of the substrate can be changed.

  Specifically, it is preferable that the environment adjusting unit includes a light emitting element for irradiating light to the second surface of the substrate. For example, the surface of the environment adjusting unit that is opposed to the second surface of the substrate is made of a transparent material, so that light can be emitted from the light emitting element to the second surface of the substrate through the transparent material. The light emitting element may be a light emitting diode, a laser, or the like. When it is necessary to change the wavelength of the irradiated light, it is preferable to use a variable-length light-emitting element.

  At this time, it is preferable that the surface of the environment adjusting unit facing the second surface of the substrate is substantially flat. Specifically, it is preferable that the unevenness of the surface of the environment adjusting unit facing the second surface of the substrate is smaller than the wavelength of light emitted from the light emitting element.

  A vacuum is applied to the environmental adjustment means by configuring the substrate support means so that the substrate is supported by the substrate support means and the substrate can be moved independently of the environmental adjustment means and the measurement means. There is no need to provide a suction groove or vacuum suction hole. Therefore, it is possible to prevent irregular reflection from occurring when light is emitted from a light emitting element mounted on the environment adjusting unit to an element (solid-state imaging element or the like) formed on the surface of the substrate. In particular, the irregular reflection of the light can be effectively reduced by making the unevenness of the surface of the environment adjusting unit facing the second surface of the substrate smaller than the wavelength of the light irradiated from the environment adjusting unit.

  Further, it is preferable that the environment adjusting unit includes a heating unit for heating the substrate or a cooling unit for cooling the substrate. As the heating means, it is preferable to incorporate a heater, a Peltier element or the like in the environment adjusting means. As the cooling means, it is preferable to incorporate a coolant circulation path, a Peltier element or the like in the environment adjusting means.

  A vacuum is applied to the environmental adjustment means by configuring the substrate support means so that the substrate is supported by the substrate support means and the substrate can be moved independently of the environmental adjustment means and the measurement means. There is no need to provide a suction groove or vacuum suction hole. Therefore, when adjusting the temperature of the element (solid-state imaging device or the like) formed on the surface of the substrate by the heating means or cooling means mounted on the environment adjusting means, non-uniformity due to vacuum suction grooves or vacuum suction holes. Can be prevented.

  Further, the environment adjusting means does not need to be provided with a vacuum suction groove or a vacuum suction hole, and can be manufactured at low cost using a transparent material such as glass or plastic.

  According to another aspect of the present invention, there is provided a probe inspection apparatus used for measuring characteristics of an element formed on a substrate, wherein a probe for measuring an output from an output terminal of an element formed on the first surface of the substrate is provided. Measuring means provided, and environmental adjusting means capable of adjusting the operating environment of the element from the second surface side opposite to the first surface of the substrate, and the second surface of the substrate of the environment adjusting means; A vacuum suction groove is provided only on a part of the opposing surface.

  Also in this case, it is preferable that the environment adjusting unit includes a light emitting element for irradiating light to the second surface of the substrate. For example, by forming at least a region where the groove for vacuum suction is not provided in a surface of the environment adjusting unit facing the second surface of the substrate from the light emitting element through the transparent material, The second surface of the substrate can be irradiated with light.

  At this time, the vacuum suction groove is provided in a region other than a region facing the photoelectric conversion element formed on the second surface of the substrate, of the surface of the environment adjusting unit facing the second surface of the substrate. Is preferred. Further, the unevenness of the area other than the area where the vacuum suction groove is provided in the surface of the environment adjusting unit facing the second surface of the substrate is smaller than the wavelength of light emitted from the environment adjusting unit. It is preferable to do.

  Accordingly, it is possible to prevent irregular reflection from occurring when light is emitted from a light emitting element mounted on the environment adjusting unit to an element (such as a solid-state imaging element) formed on the surface of the substrate. In particular, the unevenness of the region other than the region where the groove for vacuum suction is provided in the surface of the environment adjusting unit facing the second surface of the substrate is smaller than the wavelength of the light irradiated from the environment adjusting unit. By doing so, irregular reflection of light can be effectively reduced.

  Further, it is preferable that the environment adjusting unit includes a heating unit for heating the substrate or a cooling unit for cooling the substrate. At this time, a groove for vacuum suction is provided in a region other than a region facing the photoelectric conversion element formed on the second surface of the substrate, of the surface of the environment adjusting unit facing the second surface of the substrate. Is preferred. On the other hand, it is preferable that the heating means or the cooling means is provided in an area where at least the vacuum suction groove is not provided in the surface of the environment adjusting means facing the second surface of the substrate.

  As a result, when adjusting the temperature of the element (solid-state imaging device, etc.) formed on the surface of the substrate by the heating means or cooling means mounted on the environment adjustment means, the vacuum suction grooves and vacuum suction holes are not used. Uniformity can be prevented.

  According to the present invention, irregular reflection of irradiation light by a vacuum suction groove or vacuum suction hole can be prevented in probe measurement. Further, it is possible to prevent uneven temperature control due to vacuum suction grooves and vacuum suction holes in probe measurement. In addition, the probe inspection apparatus can be manufactured at a low cost.

  The probe inspection apparatus 100 according to the embodiment of the present invention includes a probe 40, a probe lifting mechanism 42, a contact portion 44, a contact lifting mechanism 46, and a substrate support mechanism 48, as shown in the side view of FIG. . The probe inspection apparatus 100 is used for measuring the characteristics of elements formed on a substrate 50 such as a semiconductor wafer or glass. FIG. 1 schematically illustrates the configuration of the probe inspection apparatus 100 for easy understanding.

  The probe inspection apparatus 100 includes a substrate support mechanism 48 that supports the substrate 50 on which an element to be measured is formed at the time of measurement, and a contact unit 44 that adjusts the operating environment conditions of the element to be measured as separate mechanisms. As prepared. Then, the relative position of the substrate with respect to the contact portion 44 can be changed by the substrate support mechanism 48.

  The probe 40 is used to input an electric signal to an element from an electrode of an element formed on the substrate 50 and to extract an electric signal from the element. As shown in FIG. 2, the probe 40 generally includes a plurality of styluses 40a made of a metal such as copper or aluminum. It is preferable that the part which contacts the electrode provided in the element used as the measuring object of the stylus 40a is made of a metal that forms ohmic contact. Further, the tip of the stylus 40a may be plated with a metal that is in ohmic contact with the electrode of the element to be measured. The stylus 40a is urged so as to be pushed out from the main body 40b of the probe 40, and when the tip of the stylus 40a is pressed against the electrode of the element, the electrode and each stylus of the probe are An electric signal is input from the power source to the element according to the necessary measurement contents, and the signal output in response to the measurement is measured by the measuring instrument.

  The probe lifting mechanism 42 is attached to the probe 40 as shown in FIG. The probe elevating mechanism 42 elevates the probe 40 relative to the substrate 50 supported by the substrate support mechanism 48. The probe elevating mechanism 42 includes, for example, a motor provided in a cylindrical container, a ball screw rotated by the motor, and a nut member screwed with the ball screw. A nut member is mechanically coupled to the probe 40. When starting the measurement, the motor is driven by a control signal from the outside, the nut member screwed into the ball screw is lowered, and the probe 40 is brought into contact with the electrode of the element formed on the substrate 50. When the substrate 50 is moved on the plane, the nut member is raised so that the probe 40 is separated from the substrate 50. The probe elevating mechanism 42 is not limited to this, and can be realized by other known configurations. The probe 40 and the probe lifting / lowering mechanism 42 constitute a part of the measuring means of the present invention.

  The contact part 44 adjusts the measurement environment of the element formed on the substrate 50. For example, as shown in FIG. 3, the contact part 44 includes a light emitting element 44 a that irradiates light onto the surface of the substrate on which the light receiving part of the solid-state imaging element is formed. The light emitting element 44a can be a light emitting diode, a laser, or the like. When it is necessary to change the wavelength of light to be irradiated in the measurement, it is preferable to use the variable length light emitting element 44a.

  The member 44b on the side facing the substrate of the contact portion 44 is made of a transparent material so that light from the light emitting element 44a can be transmitted. At this time, it is preferable that the surface B of the contact portion 44 facing the substrate is processed to be substantially flat. In particular, it is preferable that the unevenness period of the surface B facing the substrate of the contact portion 44 is smaller than the wavelength (region) of the light emitted from the light emitting element 44a. Thus, by flattening the surface B of the contact portion 44, the light irradiated from the light emitting element 44a reaches the element to be measured without being irregularly reflected.

  Furthermore, there is no need to provide a vacuum suction groove or vacuum suction hole in the member 44b, and the manufacturing cost of the probe inspection apparatus can be made lower than before even when the member 44b is made of a transparent material such as glass or plastic. it can.

  It is also preferable to provide a scattering plate 44 c inside the contact portion 44 so that the light irradiated from the surface B of the contact portion 44 is uniform. In FIG. 3, the scattering plate 44c is provided on only one surface inside the contact portion 44, but it may be provided on a plurality of surfaces. As a result, the light output from the light emitting element 44 a is scattered inside the contact portion 44, and light having a substantially uniform intensity can be output over the entire surface B of the contact portion 44.

  Further, it is preferable that the surface of the contact portion 44 other than the surface B facing the substrate is formed of an opaque material. Thereby, stray light other than the light output from the light emitting element 44a is not irradiated to the element to be measured.

  It is also preferable to include at least one of a heating unit and a cooling unit for adjusting the temperature of the contact portion 44, for example, an element formed on the substrate. The heating means can be a heater such as a heating wire or a Peltier element. Further, the cooling means can be a coolant circulating device or a Peltier element for circulating the coolant. In this case, the contact portion 44 is preferably made of a material having high thermal conductivity such as metal.

  Also in this case, it is preferable that the surface B of the contact portion 44 facing the substrate is processed to be substantially flat. By flattening the surface B of the contact part 44, the contact between the surface B of the contact part 44 and the substrate becomes uniform, and the temperature of the element by the heating means and the cooling means can be adjusted uniformly. Of course, the contact portion 44 may be provided with both the light emitting element 44a and heating means and cooling means.

  As shown in FIG. 1, the contact lifting mechanism 46 is attached to the contact portion 44. The contact elevating mechanism 46 elevates and lowers the contact portion 44 with respect to the substrate 50 supported by the substrate support mechanism 48. Similar to the probe lifting mechanism 42, the contact lifting mechanism 46 includes a motor provided in a cylindrical container, a ball screw rotated by the motor, and a nut member screwed with the ball screw. The nut member is mechanically coupled to the contact portion 44. When starting measurement, the motor is driven by a control signal from the outside, the nut member screwed to the ball screw is raised, and the contact portion 44 is brought close to the element formed on the substrate 50, preferably Is contacted. When the substrate 50 is moved in the plane direction, the nut member is lowered and the contact portion 44 is separated from the surface of the substrate 50. The contact elevating mechanism 46 is not limited to this, and can be realized by other known configurations. The contact portion 44 and the contact lifting / lowering mechanism 46 constitute a part of the environment adjusting means of the present invention.

  In the present embodiment, the contact portion 44 is disposed at a position facing the probe 40 across the substrate supported by the substrate support mechanism 48. As a result, when a solid-state imaging device to which the CSP as shown in FIG. 9 is applied is a measurement target, light irradiation is performed from the contact portion 44 from the front side of the substrate on which the element of the solid-state imaging device to which the CSP is applied is formed. In addition, the temperature can be adjusted and the measurement can be performed by bringing the probe 40 into contact with the ball terminal of the element from the back side of the substrate.

  The substrate support mechanism 48 supports the substrate 50 on which the element to be measured is formed. As shown in FIG. 4, the substrate support mechanism 48 includes a chuck 48a and an XY stage 48b. A substrate (semiconductor wafer) 50 on which an element to be measured is formed is detachably attached to a transparent plastic sheet 52 with an adhesive or the like, as shown in FIG. As the sheet 52, for example, a dicing tape made of polyolefin (PE) or the like can be used. The sheet 52 is attached to the back surface of the semiconductor substrate 50 (the surface on the side where the ball-shaped terminals are not formed in the CSP), and in the dicing process, the wafer is diced along the scribe line to electrically and physically each chip. To separate. In the case where the individual chips are electrically separated without performing dicing, the substrate 50 before the dicing process can be set as a measurement target. Further, a hollow ring-shaped support body 54 is attached to the sheet 52 so as to surround the periphery of the substrate 50. The chuck 48 a is configured to support the substrate 50 indirectly by supporting the support 54. For example, the chuck 48 a includes a mechanism for sandwiching the support 54 from above and below by two ring-shaped plates having an inner periphery slightly smaller than the outer periphery of the support 54. Thereby, the support body 54 can be supported. At this time, the substrate 50 is supported on the sheet 52 stretched by the support body 54.

  The XY stage 48b has a configuration capable of moving the chuck 48a in the plane direction. The XY stage 48b moves the chuck 48a in the in-plane direction of the substrate 50 supported by a control signal from the outside. The XY stage 48b has a hollow structure so that the probe 40 and the contact portion 44 can access the front surface and the back surface of the substrate. Accordingly, the relative position of the substrate 50 with respect to the probe 40 and the contact portion 44 can be changed, and elements formed on the surface of the substrate 50 can be sequentially selected and measured by the probe 40 and the contact portion 44. it can.

  As described above, the substrate support mechanism 48 constitutes a part of the substrate support means of the present invention. In the probe inspection apparatus according to the present embodiment, the substrate support mechanism 48 supports the substrate, and the substrate support mechanism 48 is configured so that the substrate 50 can be moved independently of the contact portion 44 and the probe 40. There is no need to provide a vacuum suction groove or vacuum suction hole. Thereby, the light irradiated to the element can be made uniform, and the temperature of the element can be adjusted uniformly. In addition, the probe inspection apparatus can be manufactured at a lower cost than before.

  In addition, as shown in FIG. 6, you may provide the groove | channel 70 for vacuum suction only in a part of surface B facing the board | substrate of the contact part 44. FIG. For example, as shown in the perspective view of FIG. 7, when a plurality of solid-state image sensors 62 are formed in a matrix on the surface of the substrate 60, there is a light receiving area 62 a of each solid-state image sensor 62. A vacuum suction groove 70 is provided in a region within the surface B of the contact portion 44 corresponding to a region 62b (region indicated by hatching) included in a region that is not the light receiving region 62a. As shown in FIG. 7, when the regions 62b of the four solid-state image sensors 62 arranged in 2 rows × 2 columns on the substrate 60 are arranged adjacent to each other, as shown in FIG. A vacuum suction groove 70 is provided in the surface B of the contact portion 44 so as to correspond to the central portion of the region where the solid-state image sensor 62 is disposed, that is, the region 62b which is not adjacent to the light receiving region 62a. The area other than the area where the groove 70 is provided on the surface B is formed to be substantially flat.

  A vacuum suction hole is provided in the groove 70, and vacuum suction is performed from the vacuum suction hole using an external vacuum pump or the like, whereby the substrate 60 is vacuum-adsorbed on the surface B of the contact portion 44. This makes it possible to make the light irradiated to the element more uniform and to adjust the temperature of the element more uniformly.

It is a schematic diagram which shows the principal part of the structure of the probe test | inspection apparatus in embodiment of this invention. It is a perspective view which shows a part of structure of the measurement means in embodiment of this invention. It is a perspective view which shows a part of structure of the environment adjustment means in embodiment of this invention. It is a perspective view which shows a part of structure of the board | substrate support means in embodiment of this invention. It is a figure explaining the support method of the board | substrate in embodiment of this invention. It is a perspective view which shows another example of the board | substrate support means in embodiment of this invention. It is a figure explaining the structure of the element in embodiment of this invention. It is a figure which shows the structure of the conventional chuck | zipper. It is a perspective view which shows the structure of the element to which a chip size package is applied.

Explanation of symbols

  10 wafer chuck, 12 grooves, 14 vacuum suction holes, 20 semiconductor substrate, 22, 24 support base, 26, 27 insulating resin, 28 ball-shaped terminal, 30 external wiring, 40 probe, 40a stylus, 40b main body, 42 probe Lifting mechanism, 44 contact portion, 44a light emitting element, 44b member, 44c scattering plate, 46 contact lifting mechanism, 48 substrate support mechanism, 48a chuck, 48b stage, 50 substrate, 52 sheet, 54 support, 60 substrate, 62 solid-state imaging Element, 62a Light receiving area, 62b Area other than light receiving area, 70 groove, 100 probe inspection device.

Claims (4)

A probe inspection apparatus used for measuring the characteristics of an element formed on a substrate,
Measuring means comprising a probe for measuring an output from an output terminal of an element formed on the first surface of the substrate;
Environmental adjustment means capable of adjusting the operating environment of the element from the second surface side opposite to the first surface of the substrate;
Substrate support means for supporting the substrate;
With
A probe inspection apparatus, wherein the relative position of the substrate can be changed with respect to the measuring means. The probe inspection apparatus according to claim 1,
The environment adjusting means includes a light emitting element that emits light to the second surface of the substrate. The probe inspection apparatus according to claim 2,
The probe inspection apparatus according to claim 1, wherein the unevenness of the surface of the environment adjusting unit facing the second surface of the substrate is smaller than the wavelength of light emitted from the light emitting element. The probe inspection apparatus according to any one of claims 1 to 3,
The probe adjustment apparatus, wherein the environment adjustment unit includes a heating unit for heating the substrate or a cooling unit for cooling the substrate.

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